KAZUHIKO HONJO

Emeritus Professor etc.Emeritus Professor
  • Profile:

    In 1976, Prof. Honjo joined NEC Corporation, Kawasaki, Japan. He has been involved in the research and development of GaAs FET high-power amplifiers, ultra-broadband amplifiers, oscillators, mixers and MMIC technology. He has also been involved in device and circuit technology developments for microwave and millimeter-wave HBT’s, 10-40Gbps fiber optic communication systems, microwave Si power MOSFET. From 1987-1993, he was Manager, Research of Micro-electronics Research Labs, NEC, and from 1993-1999, he was Senior Manager of Opto-electronics Research Labs, NEC.

    He moved to the University of Electro-Communications in 2001 as a professor at Information and Communications Engineering Department. At the university, he has established ultra-high efficiency class-F and class-R GaN HEMT amplifier design method, where more than 4th order higher harmonic frequencies can be taken into account under the existence of parasitic reactive elements. Also he has developed ultra-broadband active and passive components for UWB applications such as planar self-complementary antennas, HBT MMIC amplifiers with active balun, broad-side coupled four-line band pass filters with designed frequency notch. He has also been developing a co-simulation technique of electromagnetism and semiconductor device physics for microwave/millimeter wave devices and high-efficiency microwave rectifiers as a time reversed dual of high-efficiency power amplifiers.

    Prof. Honjo is a Fellow of the IEEE and a Fellow of the IEICE. He received the 1983 IEEE MTT-S Microwave Prize for a proposal of novel circuit topology for ultra-broadband amplifiers, and he also received the 1988 IEEE MTT-S Microwave Prize again for a proposal of novel circuit synthesis method for frequency division and its PLL applications. He received the 1999 IEICE Electronics Award for development of microwave and digital HBTs, and 1980 IEICE Young Engineer Award for development of high power GaAsFET internal matching circuits . From 1988-1992, and from 1999-2003, he served as a TPC member for MTT-S microwave and millimeter-wave monolithic circuit symposium and IMS, respectively. From 1998 to 2003, he had served as an elected AdCom member of IEEE MTT-S. He served as a Chairman of MTT-S Transnational Committee for 5 years.

    Prof. Honjo has 121 peer-reviewed journal publications, 128 international conference proceedings papers, 394 domestic conference presentations, has written 22 books/book chapters. He holds 99 Japanese patents and 19 US patents, 3 European patents, and 3 Chinese patents. Prof. Honjo has graduated 8 PhD students and 37 Master course students.

Degree

  • Master of Engineering, Tokyo Institute of Technology
  • Doctor of Engineering, Tokyo Institute of Technology

Research Keyword

  • Compound Semiconductor Device
  • 5G/6G Wireless Communication
  • Microwave and Milimeterwave
  • Orbital Angular Momentum
  • Wireless Power Transfer
  • Antenna
  • Power Amplifier
  • Integrated Circuit

Field Of Study

  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electronic devices and equipment

Career

  • Apr. 2017 - Present
    The University of Electro-Communications, Professor Emeritus
  • Apr. 2017 - Present
    The University of Electro-Communications, Advanced Wireless Communication Research Center, Visiting Professor
  • Apr. 2016 - Mar. 2017
    The University of Electro-Communications, Graduate School of Informatics and Engineering, Dean
  • Apr. 2015 - Mar. 2017
    Institute of Space and Astronautical Science, 宇宙機応用工学研究系, Visiting Professor
  • Apr. 2001 - Mar. 2017
    The University of Electro-Comminications, Dept. of Communication Engineering and Informatics, Professor
  • Apr. 2014 - Mar. 2016
    The University of Electro-Communications, Graduate School of Informatics and Engineering, Dean
  • Apr. 2009 - Mar. 2011
    The University of Electro-Communications, Advanced Wireless Communication Research Center, Director
  • Apr. 1999 - Mar. 2003
    Aoyama Gakuin University, Part-time Lecturer
  • Jul. 1999 - Mar. 2001
    NEC Corporation, System and Device Resrch Division, Chief Research Scientist
  • Jul. 1997 - Mar. 2000
    The University of Electro-Communications, Visiting Professor
  • Jul. 1993 - Jun. 1999
    NEC Microelectronics Research Labs., Senior Manager
  • Apr. 1994 - Mar. 1995
    Tohoku University, Research Institute of Electrical Communication, Part-time Lecturer
  • 01 Jul. 1987 - 30 Jun. 1993
    NEC Microelectronics Research Labs., Research Manager
  • Apr. 1976 - Jun. 1987
    NEC Central Research Labs. Electron Device Research Lab., Research Staff

Educational Background

  • Apr. 1974 - Mar. 1976
    Tokyo Institute of Technology, Graduate School of Science and Engineering, Dept. of Physical Electronics Engineering, Japan
  • Apr. 1970 - Mar. 1974
    The University of Electro-Communications, Faculty of Electro Communications, Dept. of Radio Communication Engineering, Japan

Member History

  • Jun. 2019 - Present
    Honorary Advisor, APMC National Committee, IEICE, Society
  • Jun. 2015 - Present
    Adviser, IEICE Microwave Reseaerch Group, Society
  • Apr. 2005 - Aug. 2016
    Research and Development Committee Member for Radio Wave Usage Fee, Ministry of Internal Affairs and Communications, Government
  • Apr. 2013 - Mar. 2015
    Organizing Committee Member for APMC 2014, APMC National Committee, IEICE, Society
  • Apr. 2006 - Mar. 2015
    Secretary General for Handbook Committee, IEICE, IEICE, Society
  • Jan. 2011 - Dec. 2012
    IEEE MTT-S Japan Chapter Chair, IEEE
  • May 2009 - Apr. 2011
    Chair for Microwave Research Group, IEICE, Society
  • Jun. 2010 - Jul. 2010
    Evaluation Committee Member for Next Generation Research, Japan Society for the Promotion of Science, Government
  • Jan. 1998 - Dec. 2006
    MTT-S Technology Coordinating Committee Member, IEEE, Society
  • Apr. 2003 - Mar. 2005
    Chair for APMC National Committee, IEICE, Society
  • Jan. 2003 - Dec. 2003
    MTT-S Meeting and Symposia Committee Vice Chair, IEEE, Society
  • Jan. 1999 - Dec. 2003
    MTT-S Transnational Committee Chair, IEEE, Society
  • Jan. 1998 - Dec. 2003
    MTT-S IMS Technical Program Committee Member, IEEE, Society
  • Jan. 1998 - Dec. 2003
    Elected Administrative Committee Member of Microwave Theory and Thechniques Society, IEEE
  • Oct. 2002 - Aug. 2003
    Guest Editor for Special Issue of APMC2002, IEICE, Society
  • Apr. 2000 - Mar. 2003
    Program Committee Chair of APMC 2002, IEICE, Society
  • May 2000 - Apr. 2002
    Microwave Research Group Secreary, IEICE
  • May 2000 - Apr. 2002
    APMC2002 Program Committee Chair, IEICE
  • Jan. 1999 - Dec. 2000
    Vice Chair of Transnatinal Committee for Microwave Theory and Thechniques Society, IEEE
  • Oct. 1999 - Sep. 2000
    Su-Committee Chair for SSDM, Japan Society of Applied Physics, Society
  • Jan. 1997 - Mar. 1999
    General Affair Committee Chair of APMC98, IEICE, Society
  • May 1995 - Apr. 1997
    Secretary of Microwave Research Group, IEICE, Society
  • Jan. 1996 - Dec. 1996
    Guest Editor for Special Issue of Microwave and Millimeter wave Technology, IEICE, Society
  • May 1995 - Apr. 1996
    Secretary, Microwave Research Group, IEICE
  • Jan. 1993 - Dec. 1995
    MTT-S Microwave and Millimeterwave Integrated Circuit Symposium Steering Committee Member, IEEE, Society
  • Jan. 1993 - Dec. 1995
    Treasurer of Microwave Theory and Thechniques Society, Japan Chapter, IEEE
  • Jan. 1993 - Dec. 1995
    Steering Committee Member of Microwave and Millimeterwave Integrated Circuit Symposium, IEEE
  • May 1993 - Mar. 1995
    Program Committee Secretary for APMC 1994, IEICE, Society
  • Jan. 1993 - Dec. 1993
    Technical Program Committee Chair for MWE1993, IEICE, Society
  • Jan. 1992 - Dec. 1992
    Guest Editor for Special Issue of Heterojunction Devices, IEICE, Society
  • Dec. 1989 - Dec. 1992
    Technical Program Committee Member of Microwave and Millimeterwave Monolithic Circuit Symposium, IEEE
  • Dec. 1988 - Dec. 1992
    MTT-S Microwave and Millimeterwave Integrated Circuit Symposium Technical Program Committee Member, IEEE, Society
  • May 1987 - Apr. 1991
    Committee Member of Microwave Research Group, IEICE, Society
  • May 1989 - Mar. 1991
    TPC Secretary for APMC1990, IEICE, Society

Award

  • Dec. 2019
    IEEE
    For the contribution of paper entitled "Harmonic-Tuned High-Efficiency GaN HEMT Doherty Power Amplifier Based on Two-Power-Level Impedance Optimization
    APMC 2019 Prize (Best Paper Award), T.Seshimo;Y.Takayama;R.Ishikawa;K.Honjo
    International society, Singapore
  • Jan. 2017
    IEEE
    Life Fellow, Kazuhiko Honjo
    Official journal, United States
  • Sep. 2016
    IEICE
    ”Design Principle for Microwave High-Efficiency Power Amplifier"
    Best Invited Paper Award, Kazuhiko Honjo;Yoichiro Takayama;Ryo Ishikawa
    Official journal, Japan
  • May 2012
    Japan Institute of Electronics Packaging
    "Circuit Modeling for High Packing Density Printed Circuit Board"
    2011 JIEP Paper Award, Hirobumi Inoue, Kazuhiko Honjo
    Official journal, Japan
  • Sep. 2008
    IEICE
    "For Contributions to the Monolithic Microwave Integrated Circuits and HBTs"
    IEICE Fellow, Kazuhiko Honjo
    Official journal, Japan
  • Mar. 2005
    IEICE
    "Volunteer Activities for IEICE Electronics Society"
    Electronics Society Service Award, Kazuhiko Honjo
    Japan society, Japan
  • Jun. 2004
    IEEE
    "International Volunteer Activites for Microwave Society as an Elected AdCom"
    IEEE MTT-S Meritorious Service Award, Kazuhiko Honjo
    International society, United States
  • Dec. 2001
    Takeda Science Fundation
    "Microwave High-Efficiency Power Amplifier"
    The Takeda Techno-Entrepreneurship Award 2001, Kazuhiko Honjo
    Publisher, Japan
  • Sep. 1999
    IEICE
    ”For development of GaAs FET and HBT”
    Electronics Society Award, Kazuhiko Honjo
    Official journal, Japan
  • Jan. 1997
    IEEE
    "For contributions to the development of gallium-arsenide integrated circuits"
    IEEE Fellow, Kazuhiko Honjo
    Official journal, United States
  • Dec. 1989
    NEC Coorporation
    "Development of Process & Device Simulator"
    Outstanding Achievement Award, Kazuhiko Honjo, et al.
    Others, Japan
  • May 1988
    IEEE
    "X-band analog frequency diverder for PLL: The most significant contribution to microwave society in 1988"
    IEEE MTT-S Microwave Prize, Mohamad Madihian, Kazuhiko Honjo
    International academic award, United States
  • Jun. 1983
    IEEE
    "Ultra-Broadband Amplifier :The most significant contribution to microwave society in 1983"
    IEEE MTT-S Microwave Prize, Kazuhiko Honjo, Yoichiro Takayama
    International academic award, United States
  • Mar. 1980
    IEICE
    ”Microwave Internally Matched GaAs FET"
    Young Engineer Award, Kazuhiko Honjo
    Japan society, Japan
  • Nov. 1979
    NEC Coorporation
    "Development and mass-production of GaAs FET"
    President Special Award, Kazuhiko Honjo;Yoichiro Takayama,others
    Others, Japan

Paper

  • Multi-Point OAM Communication by Beamsteering Using Loop Antenna Array Displaced from Focus of Paraboloid
    Kanki Kitayama; Akira Saitou; Kazuhiko Honjo; Ryo Ishikawa
    Proceedings of the 2023 Asia-Pacific Microwave Conference (APMC2023),, Dec. 2023, Peer-reviwed
    International conference proceedings, English
  • Extension of Transmission Distance via Dielectric-Lens Repeater for OAM Multiplexing Communications
    Kaito Uchida; Akira Saitou; Kazuhiko Honjo; Ryo Ishikawa
    Proceedings of the 2023 Asia-Pacific Microwave Conference (APMC2023),, Dec. 2023, Peer-reviwed
    International conference proceedings, English
  • 28-GHz-band Loop Antenna Arrays Loaded with Varactor Diodes for OAM Beamsteering
    Tsuyoshi Yoshida; Akira Saito; Kazuhiko Honjo; Ryo Ishikawa
    Proceedings of the 2023 Asia-Pacific Microwave Conference (APMC2023),, Dec. 2023, Peer-reviwed
    International conference proceedings, English
  • Wide-Dynamic-Range High-Efficiency GaN HEMT Rectifier with Adaptive Gate Bias Controlling Rectifier
    Taki Nagata; Jun Yamazaki; Kazuhiko Honjo; Ryo Ishikawa
    Proceedings of the 2023 Asia-Pacific Microwave Conference (APMC2023),, Dec. 2023, Peer-reviwed
    International conference proceedings, English
  • Fully Integrated 28-GHz-Band GaN HEMT Outphasing Amplifier Designed by Considering Insertion Loss at Dual-Power-Level Optimization
    Taiki Kobayashi; Kazuhiko Honjo; Ryo Ishikawa
    Proceedings of the 2023 Asia-Pacific Microwave Conference (APMC2023),, Dec. 2023, Peer-reviwed
    International conference proceedings, English
  • Back-Off Expansion by Outphasing Combination with Simple Power Amplifiers for Quasi-Millimeter Wave Operation
    Nao Ashizawa; Kazuhiko Honjo; Ryo Ishikawa
    Proceedings of the 2022 Asia Pacific Microwave Conference, 91-93, Nov. 2022, Peer-reviwed
    International conference proceedings, English
  • Optimizations of Curvature of Concave Reflectors and Feed-Point Azimuths of Loop Antennas for Long-Range OAM Communication
    Katsuya Ishihara; Akira Saitou; Kazuhiko Honjo; Ryo Ishikawa
    Proceedings of the 2022 Asia Pacific Microwave Conference, 393-395, Nov. 2022, Peer-reviwed
    International conference proceedings, English
  • DC-Feedback-Mode Transistor Rectifier/Voltage-Doubler Diode Rectifier for Negative Gate Biasing to Microwave Power Amplifiers
    Taki Nagata; Kazuhiko Honjo; Ryo Ishikawa
    Proceedings of the 2022 Asia Pacific Microwave Conference, 446-448, Nov. 2022, Peer-reviwed
  • DC Voltage Synthesis of 2.45-GHz-Band Sub-mW High-Efficiency Rectifier using Zero-Threshold GaAs HEMTs
    Tsuyoshi Yoshida; Kazuhiko Honjo; Ryo Ishikawa
    Proceedings of the 2022 Asia Pacific Microwave Conference, 572-574, Nov. 2022, Peer-reviwed
    International conference proceedings, English
  • Pattern synthesis of spatial eigenmodes exploiting spherical conformal array
    Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Last, IEICE Transactions on Communication, E105-B, 10, 1231-1239, 01 Oct. 2022, Peer-reviwed
    Scientific journal, English
  • The Outline and the Current Status of the Power Transmission System Development Project for the Realization of the SSPS
    Kenji Sasaki; Hirotaka Machida; Koichi Ijichi; Osamu Kashimura; Kosei Ishimura; Ryo Ishikawa; Kazuhiko Honjo; Yuichiro Ozawa; Koji Tanak
    73rd International Astronautical Congress (IAC), Paris, France, IAC-22-C3.2.4, 1-7, 18 Sep. 2022, Peer-reviwed
    International conference proceedings, English
  • A 28-GHz-Band GaN HEMT MMIC Doherty Power Amplifier Designed by Load Resistance Division Adjustment
    Ryo Ishikawa; Takuya Seshimo; Yoichiro Takayama; Kazuhiko Honjo
    Last, Proceedings of the 2021 European Microwave Conference, EuMC2021, 241-244, Apr. 2022, Peer-reviwed
    International conference proceedings, English
  • Mode Purity Evaluation for OAM Communication using Integrated Loop Antenna Array
    Haruki Kikuchi; Akira Saitou; Wataru Wada; Hiroshi Suzuki; Kazuhiko Honjo; Ryo Ishikawa
    Proceedings of the 2021 European Microwave Conference, EuMC2021, 643-646, Apr. 2022, Peer-reviwed
    International conference proceedings, English
  • A 10-MHz-Band Bidirectional Wireless Power Transfer System with Zero-Threshold Si MOSFETs
    Takaharu KUME; Kazuhiko HONJO; Ryo ISHIKAWA
    IEICE Transaction in Japanese, IEICE, J105-C, 1, 28-36, Jan. 2022, Peer-reviwed
    Scientific journal, Japanese
  • A 4.5-GHz-Band Miniature Outphasing GaN HEMT MMIC Power Amplifier
    Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
    Last, Proceedings of the 2021 Asia Pacific Microwave Conference, APMC2021, 106-108, Nov. 2021, Peer-reviwed
    International conference proceedings, English
  • Doherty Amplifier Design Based on Asymmetric Configuration Scheme
    Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
    Last, IEICE Transactions on Electronics, 104-C, 10, 496-505, Oct. 2021, Peer-reviwed, Invited
    Scientific journal, English
  • A Novel GaN/SiC MMIC Gain Switch Using a Resonant Bidirectional FET Amplifier
    Hiroshi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
    Last, Proceedings of the 2021 European Microwave Conference, EuMC 2021, EuMC2021, 285-288, 2021, Peer-reviwed, This paper presents a novel gain switch circuit using a resonant bidirectional field-effect transistor (FET) amplifier. The proposed switch circuit can provide insertion gain even at the millimeter-wave frequencies by using a resonant bidirectional FET amplifier. The fundamental operation of a single pole single throw (SPST) FET gain switch is successfully demonstrated as a GaN/SiC microwave monolithic integrated circuit (MMIC), which is a quite essential material to ensure the watt-class RF power handling capability for the transmission signal even at the millimeter-wave frequencies. It shows the insertion gain and isolation of 0.98 dB and 11.2 dB, respectively, at 25 GHz. Input power for 1-dB gain compression, P1dB, is around 6 dBm at 25 GHz. For further improvement of insertion gain and isolation, maximizing transconductance of FET and minimizing feedback capacitance by bias optimization and/or increasing stage number of a bidirectional amplifier are found to be efficient from principle analysis of the presented switch circuit. Furthermore, optimization of gate width and bias voltage improves power handling capability.
    International conference proceedings, English
  • High-Efficiency Asymmetric Doherty Power Amplifier with Spurious Suppression Circuit
    Yuki Takagi; Naoki Hasegawa; Yoshichika Ohta; Ryo Ishikawa; Kazuhiko Honjo
    Last, Proceedings of the 2020 European Microwave Conference (EuMC2020), Jan. 2021, Peer-reviwed
    International conference proceedings, English
  • Input-Power-Synchronous Adaptively Biased Wide-Dynamic-Range High-Efficiency Rectifier with Zero-Threshold GaAs HEMTs
    Jun Yamazaki; Ryo Ishikawa; Kazuhiko Honjo
    Last, Proceedings of the 2020 European Microwave Conference (EuMC2020), Jan. 2021, Peer-reviwed
    International conference proceedings, English
  • Loop Antenna Array System with Simultaneous Operation of OAM Multiplex Communication and Wireless Power Transfer
    Wataru Wada; Ryo Ishikawa; Akira Saitou; Hisanosuke Miyake; Haruki Kikuchi; Hiroshi Suzuki; Kazuhiko Honjo
    Last, Proceedings of the 2020 European Microwave Conference (EuMC2020), Jan. 2021, Peer-reviwed
    International conference proceedings, English
  • Investigation of Integration for OAM Communication Using Loop Antenna Array and Analysis of Alignment Tolerance for Practical Use
    Haruki Kikuchi; Akira Saitou; Hisanosuke Miyake; Wataru Wada; Hiroshi Suzuki; Ryo Ishikawa; Kazuhiko Honjo
    Last, Proceedings of the 2020 European Microwave Conference (EuMC2020), Jan. 2021, Peer-reviwed
    International conference proceedings, English
  • Miniaturization of Harmonic Impedance Transformer for Class-F Power Amplifiers
    Kento SAIKI; Shinichi TANAKA; Ryo ISHIKAWA; Kazuhiko HONJO
    Last, IEICE Trans.C, Japanese Edition, J104, 01, Jan. 2021, Peer-reviwed
    Scientific journal, Japanese
  • A 3.9-GHz-Band Outphasing Power Amplifier with Compact Combiner Based on Dual-Power-Level Design for Wide-Dynamic-Range Operation
    Ryoichi Ogasawara; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Last, 2020 IEEE International Microwave Symposium, IMS2020, Aug. 2020, Peer-reviwed
    International conference proceedings, English
  • Small-signal design consideration for two-dimensional change-over switch GaN MMICs
    Hiroshi Mizutani, Ryo Ishikawa, Kazuhiko Honjo
    Last, Japanese Journal of Applied Physics, 59, SG, SGGL07-1-SGGL07-9, Jan. 2020, Peer-reviwed
    Scientific journal, English
  • A Novel Sub-6-GHz and 28-GHz GaN Switchable Diplexer MMIC for Carrier Aggregation with Massive MIMO Full Duplex Link
    Hiroshi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
    Last, Proceedings of the 2019 Asia Pacific Microwave Conference, IEEE, 1429-1431, Dec. 2019, Peer-reviwed, This paper presents a novel sub-6-GHz and 28-GHz GaN switchable diplexer microwave monolithic integrated circuit (MMIC) for carrier aggregation (CA) with massive multiple-input multiple-output (MIMO) full-duplex (FD) link, which can mitigate self-interference (SI) in CA operation and can select antenna. The switchable diplexer MMIC is successfully demonstrated by 0.25-mu m GaN foundry process to ensure the high power handling capability in front-ends (FEs). The developed GaN switchable diplexer MMIC indicates the insertion losses of less than 2.0 dB and 2.5 dB at 3.7 Gib, and 4.5 GHz, respectively, with the isolation of more than 21.3 dB at 28.5 GHz. For another bias state, the isolations of more than 31.9 dB and 28.3 dB at 3.7 GHz and 4.5 GHz, respectively, with the insertion loss of 3.0 dB at 28.5 GHz are obtained. A developed GaN sub-6-GHz and 28-GHz switchable diplexer MMIC contributes to highspeed techniques such as CA with massive MIMO FD link for 5G and beyond 5G applications.
    International conference proceedings, English
  • Harmonic-Tuned High-Efficiency GaN HEMT Doherty Power Amplifier Based on Two-Power-Level Impedance Optimization
    Takuya Seshimo; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Last, Proceedings of the 2019 Asia Pacific Microwave Conference, Dec. 2019, Peer-reviwed
    International conference proceedings, English
  • High Performance OAM Communication Exploiting Port-Azimuth Effect of Loop Antennas
    Hiroto Otsuka; Ryohei Yamagishi; Akira Saitou; Hiroshi Suzuki; Ryo Ishikawa; Kazuhiko Honjo
    Last, IEICE Transactions on Communication, E102-B, 12, Dec. 2019, Peer-reviwed
    Scientific journal, English
  • A 2.4 GHz-Band Enhancement-Mode GaAs HEMT Rectifier with 19% RF-to-DC Efficiency for 1 uW Input Power
    Ryo Ishikawa; Tsuyoshi Yoshida; Kazuhiko Honjo
    Last, Proceedings of the 2019 European Microwave Conference (EuMC2019), Oct. 2019, Peer-reviwed
    International conference proceedings, English
  • Proposal of a Novel SPDT Switch and Duplexer Dual Function Circuit
    Hiroshi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
    Last, International Conference on Solid State Devices and Materials, Sep. 2019, Peer-reviwed
    International conference proceedings, English
  • Class-F GaN HEMT amplifiers using compact CRLH harmonic tuning stubs designed based on negative order resonance modes
    Shinichi TANAKA; Sota KOIZUMI; Ryo ISHIKAWA; Kazuhiko HONJO
    Last, IEICE Transactions on Electronics, 102-C, 10, 691-698, Jul. 2019, Peer-reviwed, Copyright © 2019 The Institute of Electronics, Extremely compact harmonic tuning circuits for class-F amplifiers are realized using composite right-/left-handed (CRLH) transmission line stubs. The proposed circuits take up only a small fraction of the amplifier circuit area and yet are capable of treating four harmonics up to the 5th with a single stub or double stub configuration. This has become possible by using the negative order resonance modes of the CRLH TL, allowing for flexible and simultaneous control of many harmonics by engineering the dispersion relation of the stub line. The CRLH harmonic tuning stubs for 2-GHz amplifiers were realized using surface mounting chip capacitors, whereas the stub for 4-GHz amplifiers was fabricated based fully on microstrip-line technology. The fabricated 2-GHz and 4-GHz GaN HEMT class-F amplifiers exhibited peak drain efficiency and peak PAE of more than 83% and 74%, respectively.
    Scientific journal, English
  • A High-efficiency DC-to-RF/RF-to-DC Conversion Module with Zero-threshold FET for Bidirectional Wireless Power Transfer
    Takaharu Kume; Ryo Ishikawa; Kazuhiko Honjo
    Last, PIERS 2019, Progress IN Electromsgnetics Research Symposium, Jun. 2019, Peer-reviwed
    International conference proceedings, English
  • Anti-interference Circuit Conguration for Concurrent Dual-Band Operation in High-Efficiency GaNHEMT Power Amplier
    Haruka Nishizawa; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Last, Progress in Electromagnetics Research (PIER C), PIER C, 93, 199-209, Jun. 2019, Peer-reviwed
    Scientific journal, English
  • Advanced Mode Unity Using Loop Antennas Proximate to Reflector for Orbital Angular Momentum Communication
    Ryohei Yamagishi; Hiroto Otsuka; Ryo Ishikawa; Akira Saitou; Hiroshi Suzuki; Kazuhiko Honjo
    Last, The Proceedings of 2018 Asia Pacific Microwace Conference, Nov. 2018, Peer-reviwed
    International conference proceedings, English
  • High-Performance Long-Range OAM Communication
    Hiroto Otsuka; Ryohei Yamagishi; Ryo Ishikawa; Akira Saitou; Hiroshi Suzuki; Kazuhiko Honjo
    Last, Proceedings of the 2018 Asia Pacific Microwace Conference, Nov. 2018, Peer-reviwed
    International conference proceedings, English
  • GaN HEMT Darlington Power Amplifier with Independent Biasing for High-Efficiency Low-Distortion Wide-Dynamic-Range Adjustment
    Atsushi Kitamura; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Last, Proceedings of the 2018 Asia Pacific Microwace Conference, Nov. 2018, Peer-reviwed
    International conference proceedings, English
  • Double Multiplicity Exploiting Orthogonal Polarizations of OAM-Wave for OAM Communication with Loop Arrays
    Akira Saitou; Hiroto Otsuka; Ryohei Yamagishi; Ryo Ishikawa; Hiroshi Suzuki; Kazuhiko Honjo
    Last, Proceedings of the 2018 Asia Pacific Microwace Conference, Nov. 2018, Peer-reviwed
    International conference proceedings, English
  • 18GHz-/28GHz-Band Gain-Boosted Feedback Power Amplifiers Using Affordable GaN HEMT MMIC Process
    Tsukasa Yasui; Ryo Ishikawa; Kazuhiko Honjo
    Last, The Proceedings of 2018 Asia Pacific Microwace Conference, Nov. 2018, Peer-reviwed
    International conference proceedings, English
  • A Novel Reconfigurable GaN Filter MMIC with Active Reflector
    Hitoishi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
    Last, The Proceedings of 2018 Asia Pacific Microwace Conference, Nov. 2018, Peer-reviwed
    International conference proceedings, English
  • 4.5-/4.9-GHz-Band Selective High-Efficiency GaN HEMT Power Amplier by Characteristic Impedance Switching
    Kazuki Mashimo; Ryo Ishikawa; Kazuhiko Honjo
    Last, IEICE Transactions on Electronics, 101-C, 10, 751-758, Oct. 2018, Peer-reviwed
    Scientific journal, English
  • Fully Integrated Asymmetric Doherty Amplifier Based on Two-Power-Level Impedance Optimization
    Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
    Last, Proceedings of the 48th European Microwave Conference (EuMC2018), 1221-1224, Sep. 2018, Peer-reviwed
    International conference proceedings, English
  • GHz-Band High-Efficiency Rectifier Design Based on MHz-Band
    Minato Machida; Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
    Last, 2018 IEEE International Microwave Symposium (IMS, Th1B, Jun. 2018, Peer-reviwed
    International conference proceedings, English
  • Second Harmonic Treatment Technique for Bandwidth Enhancement of GaN HEMT Amplifier with Harmonic Reactive Terminations
    Jun Enomoto; Ryo Ishikawa; Kazuhiko Honjo
    Last, IEEE Transactions on Microwave Theory and Techniques, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 65, 12, 4947-4952, Dec. 2017, Peer-reviwed, Source and load impedance conditions for the second harmonics have a great influence on the efficiency of amplifiers. The bandwidth of high-efficiency operation is limited, since efficiency is drastically degraded due to a slight change in source-side second harmonic impedance from the optimum point. For this reason, to avoid steep efficiency degradation, a source-side second harmonic impedance control is introduced. In addition, a harmonic treatment network, which reduces the influence on matching-network design, is also described here. A fabricated GaN HEMT amplifier has achieved a maximum power-added efficiency (PAE) of 79% with a saturated output power of 48.0 dBm at 2.02 GHz. The amplifier has also achieved a high-efficiency characteristic of more than 70% PAE in the frequency range from 1.68 to 2.12 GHz.
    Scientific journal, English
  • Improvement of Mode Uniqueness for OAM Communication Using a Loop Array with Reflector Plane
    Ryohei Yamagishi; Hiroto Otuka; Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Last, Proceedings of the 2017 Asia Pacific Microwave Conference, Institute of Electrical and Electronics Engineers Inc., TH2B3, 1095-1098, Nov. 2017, Peer-reviwed, Mode uniqueness in an orbital-angular-momentum (OAM) communication scheme is improved to obtain excellent performance at the 5-GHz band. The mode uniqueness is shown by analysis and numerical calculation to be improved by combining loop antennas and a reflector plane. With 4-element loop antenna arrays, the current isolation that is the index for the mode uniqueness is 18.4 dB, 27.9 dB, and 41.0 dB for distances of 10 mm, 5 mm, and 2 mm between the reflector and the array, respectively. With the arrays for the distance of 5 mm, 4-value multiplexing characteristics for short-range (30 mm) communication were estimated. The simulated and measured transmission isolations are more than 23.6 dB and 19.2 dB, respectively. The measured transmission isolation is improved by 7.2 dB compared with the array without the reflector [4]. For long-range (1 m) communication with paraboloids and the array, the simulated transmission isolation is as large as 30.4 dB, which shows that the improvement of the current isolation by the reflector is also extremely effective for the long-range OAM communication.
    International conference proceedings, English
  • Analysis on Doubling Multiplicity for OAM Communication Using Loop Antenna Arrays
    Akira Saitou; Hiroto Otsuka; Ryohei Yamagishi; Ryo Ishikawa; Kazuhiko Honjo
    Last, Proceedings of the 2017 Asia Pacific Microwave Conference, Institute of Electrical and Electronics Engineers Inc., TH2B3, 1091-1094, Nov. 2017, Peer-reviwed, Recovering the original degree of freedom on multiplicity is investigated for orbital angular momentum communication using loop antennas in the 5-GHz band. The induced current is analyzed with generalized Z-matrices, and the orthogonality between antennas of the same radius is analytically shown to be realized by optimizing the relative directions of the ports for the antennas. With four kinds of loop radii, the transmission coefficients among eight antennas are shown by numerical estimation to be suppressed to less than -28.8 dB, where the return losses are better than 25.7 dB. With the analytically obtained port directions, transmission between the 16-element transmitting and receiving arrays was simulated. Simulated transmission isolations were better than 8.2 dB, and those for the antennas of the same radius were better than 11.9 dB. Eight-element transmitting arrays were fabricated, and the measured transmissions between antennas of the same radius were suppressed to less than -22.7 dB, which shows that multiplexing using antennas of the same radius is promising by designing relative port directions.
    International conference proceedings, English
  • High Performance OAM Communication Using Loop Antennas Optimized for Port Azimuths
    Hiroto Otsuka; Ryohei Yamagishi; Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Last, Proceedings of the 2017 Asia Pacific Microwave Conference, Institute of Electrical and Electronics Engineers Inc., TH2B2, 1087-1090, Nov. 2017, Peer-reviwed, High-performance Orbital-Angular-Momentum (OAM) communication using loop antennas is demonstrated at the 5-GHz band, where the interference transmission is suppressed. Induced currents for multiple expansion orders are analyzed with generalized Z-matrices, and optimum combinations for the port azimuths are found for short- and long-range OAM communication. Four-value multiplexing characteristics are estimated by simulation and measurement with loop arrays for port azimuths customized for short-range communication. The simulated and measured transmission isolations were more than 25.4 dB and 23.6 dB, respectively, for the distance of 10 mm between the transmitting and receiving arrays. The measured isolation is as much as 9.2 dB higher than the conventional arrays for identical port azimuths. With paraboloids and arrays optimized for long-range communication, 4-value multiplexing communication characteristics for a long range were estimated. The simulated and measured transmission isolations were more than 16.7 dB and 13.5 dB, respectively, for the distance of 125 cm between the transmitting and receiving arrays.
    International conference proceedings, English
  • Linearity Improvement for Single-GaN HEMT Dual-Band Power Amplifier in Concurrent Operation Mode
    Alice Maruyama; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Last, Proceedings of the 2017 Asia Pacific Microwave Conference, Institute of Electrical and Electronics Engineers Inc., THP1, P8, 995-998, Nov. 2017, Peer-reviwed, A single-GaN HEMT dual-band power amplifier with a spurious-controlling circuit to improve concurrent amplifying linearity is presented. The behavior of the output power and efficiency characteristics of the dual-band amplifier were analyzed using FET transconductance(gmi), and the effects of cross-modulation in concurrent-mode are shown shown. The fabricated 0.8-/2.2- GHz dual-band GaN HEMT amplifier consisting of dual-frequency-band matching circuits showed a deterioration of power response linearity at low input power levels in dual-band concurrent operation. Stubs for short-circuiting second order intermodulation components were added to the input matching circuit and the deterioration of power response linearity was successfully improved.
    International conference proceedings, English
  • GaN HEMT DC I-V Device Model for Accurate RF Rectifier Simulation
    Tsukasa Yasui; Ryo Ishikawa; Kazuhiko Honjo
    Last, IEEE Microwave and Wireless Component Letters, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 27, 10, 930-932, Oct. 2017, Peer-reviwed, Recently, various high-efficiency RF rectifiers have been proposed. In this letter, to improve the simulation accuracy of RF active rectifier circuits, a new device model for GaN HEMTs is proposed that improves the reproducibility of I-D-V-DS characteristics in the third-quadrant region (both drain voltage and drain current are negative). Based on measured characteristic data of an actual GaN HEMT, the device parameters for this model have been decided, and the advantage of the new device model has been confirmed.
    Scientific journal, English
  • Early Developments of the Research on Microwave Semiconductor Circuits
    Kazuhiko Honjo; Takayama Yoichiro
    Lead, IEICE Transactions on Electronics, J100C, 10, 390-399, Oct. 2017, Peer-reviwed, Invited
    Scientific journal, Japanese
  • A Novel Two-Dimensional Changeover GaN MMIC Switch
    Hiroshi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
    Last, 2017 IEEE Compound Semiconductor Integrated Circuit Symposium, Oct. 2017, Peer-reviwed
    International conference proceedings, English
  • Analytical and Measured Estimation for 4-value Multiplexing OAM Communication Using Loop Array Antennas
    Hiroto Otsuka; Ryohei Yamagishi; Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 47th European Microwave Conference, Institute of Electrical and Electronics Engineers Inc., EuMC03-5, 54-57, Oct. 2017, Peer-reviwed, Characteristics for 4-value multiplexing orbital-Angular-momentum (OAM) communication using loop antennas are estimated both analytically and experimentally in the 5GHz band. Transmission characteristics for short-range OAM communication are analytically estimated with generalised Z-matrices for 4-element loop antenna arrays. The arrays were designed and fabricated on a 0.1-mm-Thick FR-4 substrate. The analytical and measured transmission isolations at a distance of 1cm are more than 17.3dB and 14.4 dB, respectively. For long-range OAM communication, the collimated characteristics of the OAM wave are analytically estimated. Based on the results, the measured characteristics for 4-value multiplexing OAM communication are exhibited. The measured transmission isolation was more than 7.8 dB at a distance of 150 cm.
    International conference proceedings, English
  • 4.5-/4.9-GHz-Band Tunable High-Efficiency GaN HEMT Power Amplifier
    Kazuki Mashimo; Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 47th European Microwave Conference, Institute of Electrical and Electronics Engineers Inc., EuMC22-2, 460-463, Oct. 2017, Peer-reviwed, A 4.5-4.9-GHz-band tuneable high-efficiency GaN HEMT power amplifier has been developed to meet the demand for high-speed data-rate wireless communication systems. By applying one-eighth-wavelength, closely spaced, parallel, open-ended stubs to set a short condition at a mid second-order harmonic frequency, and by switching its condition between connected and non-connected states to change the reactance at each fundamental frequency in the amplifier output circuit, a high-efficiency operation band was successfully shifted. As a first step, the connected/non-connected state was created with bonding wires. The fabricated GaN HEMT amplifier exhibited a maximum power-added efficiency of 62% and 66%, a maximum drain efficiency of 66% and 70%, and a saturation output power of 38 dBm at 4.66 and 4.92 GHz, respectively, for each switched condition.
    International conference proceedings, English
  • Wide-Band High-Efficiency GaN HEMT Amplifier
    Yuki Takagi; Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 47th European Microwave Conference, EuMC22-4, 468-471, Oct. 2017, Peer-reviwed
    International conference proceedings, English
  • Concurrent Dual-Band Amplifier Design Technique for 5G Wireless Systems
    Kazuhiko Honjo; Yoichiro Takayama; Ryo Ishikawa
    12th Topical Workshop on Heterostructure Microelectronics, 10-1, 85-86, Aug. 2017, Peer-reviwed, Invited
    International conference proceedings, English
  • Concurrent Dual-Band Access GaN HEMT MMIC Amplifier Suppressing Inter-Band Interference
    Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
    Digest of 2017 IEEE International Microwave Symposium, Institute of Electrical and Electronics Engineers Inc., THIFA02-14, 2045-2048, Jun. 2017, Peer-reviwed, A concurrent dual-band GaN HEMT MMIC amplifier has been developed for next-generation wireless communication systems. To increase information quantity, a carrier-aggregation technique that uses two or more bands for one information block will be employed at super-high-frequency bands. Efficiency and linearity for general dual-band amplifiers are strongly degraded in concurrent operation due to cross- and inter-modulation distortion between each band. To suppress those, inter-band interference rejection circuits are embedded in the proposed amplifier circuit configuration. Suppression of cross- and inter-modulation distortion was confirmed for a fabricated 4-/8-GHz-band GaN HEMT MMIC amplifier during concurrent operation.
    International conference proceedings, English
  • Microwave Characteristics of an Independently Biased 3-stack InGaP/GaAs HBT Configuration
    Duy Manh Loung; Ryo Ishikawa; Yoichirou Takayama; Kazuhiko Honjo
    IEEE Transactions on Circuits and Systems 1, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 64, 5, 1140-1151, May 2017, Peer-reviwed, This paper investigates various important microwave characteristics of an independently biased 3-stack InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) chip at both small-signal and large-signal operation. By taking the advantage of the independently biased functionality, bias condition for individual transistor can be adjusted flexibly, resulting in the ability of independent control for both small-signal and large-signal performances. It was found that at small-signal operation stability and isolation characteristics of the proposed configuration can be significantly improved by controlling bias condition of the second-stage and the third-stage transistors while at large-signal operation its linearity and power gain can be improved through controlling the bias condition of the first-stage and the third-stage transistors. To demonstrate the benefits of using such an independently biased configuration, a measured optimum large-signal performance at an operation frequency of 1.6 GHz under an optimum bias condition for the high gain, low distortion were obtained as: PAE = 23.5 %, P-out = 12 dBm; Gain = 32.6 dB at IMD3 = -35 dBc. Moreover, to demonstrate the superior advantage of the proposed configuration, its small-signal and large-signal performance were also compared to that of a single stage common-emitter, a conventional 2-stack, an independently biased 2-stack and a conventional 3-stack configuration. The compared results showed that the independently biased 3-stack is the best candidate among the configurations for various wireless communications applications.
    Scientific journal, English
  • Four-value Multiplexing Orbital Angular Momentum Communication Scheme Using Loop Antenna Arrays
    Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 2016 Asia Pacific Microwave Conference, IEEE, -, Dec. 2016, Peer-reviwed, A four-value multiplexing orbital angular momentum (OAM) communication scheme is demonstrated using loop antenna arrays. Considering the radiated fields of loop antennas, MIMO communication without signal processing is shown to be realized by controlling the current distribution in a single Fourier expansion coefficient. Through numerical analysis on the current, a single coefficient is shown to be dominant, where the loop perimeter is approximately the integral multiple of the wavelength. For long-range OAM communication, diffraction patterns of the collimated fields with paraboloids are analyzed, and the diffraction is shown to have a greater effect on the higher OAM modes. For short-range communication, fourelement loop antenna arrays are estimated by simulations and measurements. The transmission coefficient between the antennas of the same perimeter is shown to be larger by more than 12 dB than those of a different perimeter for a 1-cm distance. For long-range communication, a collimating configuration is proposed, and the transmission coefficient between the antennas of the same perimeter is shown to be larger by more than 11 dB for a 1-m distance.
    International conference proceedings, English
  • A Method for Designing High-Efficiency Microwave Power Amplifier based on the Evaluation of Low-Frequency Active Load-Pull Measurement Systems ––High Precision by Considering the Nonlinearity of Parasitic Capacitance in the Transistor––
    Yao Tao; Ryo Ishikawa; Kazuhiko Honjo
    IEICE Transactions on Electronics (Japanese Edition), J99-C, 12, 651-658, Dec. 2016, Peer-reviwed, Invited
    Scientific journal, Japanese
  • Miniature Design Technique of Stabilized C-Band p-HEMT MMIC Doherty Power Amplifier with Lumped Element Load Modulator
    Tsuyoshi Yoshida; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, 99-C, 10, 1130-1139, Oct. 2016, Peer-reviwed, A broadband miniature GaAs p-HEMT MMIC Doherty power amplifier (DPA) with a series connected load operating at the C band has been developed. To minimize the circuit size, a lumped-element load modulation circuit without a quarter wavelength transmission line has been introduced to MMIC technology. For both an input and output power divider/combiner circuit, two baluns are used to reduce the length of the phase adjuster circuit without causing instability. An inherent DPA instability problem related with the degenerated sub-harmonic frequency has been analyzed with the S and T parameters of DPA circuit components, resulting in a novel stabilized circuit. The developed stabilized DPA delivered a maximum power added efficiency (PAE) of 49% and a maximum output power of 23.4 dBm. Greater than 40% PAE below a 10-dB input back-off from a saturated output power is obtained for a frequency range of 6.1 to 6.8 GHz.
    Scientific journal, English
  • Experimental Design Method for High-Efficiency Microwave Power Amplifiers Based on a Low-Frequency Active Harmonic Load-Pull Technique
    Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, 99-C, 10, 1147-1155, Oct. 2016, Peer-reviwed, A novel experimental design method based on a low-frequency active load-pull technique that includes harmonic tuning has been proposed for high-efficiency microwave power amplifiers. The intrinsic core component of a transistor with a maximum oscillation frequency of more than several tens of gigahertz can be approximately assumed as the nonlinear current source with no frequency dependence at an operation frequency of several gigahertz. In addition, the reactive parasitic elements in a transistor can be omitted at a frequency of much less than 1 GHz. Therefore, the optimum impedance condition including harmonics for obtaining high efficiency in a nonlinear current source can be directly investigated based on a low-frequency active harmonic load-pull technique in the low-frequency region. The optimum load condition at the operation frequency for an external load circuit can be estimated by considering the properties of the reactive parasitic elements and the nonlinear current source. For an InGaAs / GaAs pHEMT, active harmonic load-pull considering up to the fifth-order harmonic frequency was experimentally carried out at the fundamental frequency of 20 MHz. By using the estimated optimum impedance condition for an equivalent nonlinear current source, high-frequency amplifiers were designed and fabricated at the 1.9-GHz, 2.45-GHz, and 5.8-GHz bands. The fabricated amplifiers exhibited maximum drain efficiency values of 79%, 80%, and 74% at 1.9 GHz, 2.47 GHz, and 5.78 GHz, respectively.
    Scientific journal, English
  • GaN SPST MMIC Switches Based on HPF/LPF Switching Concept for High Power Applications
    Hiroshi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 46th European Microwave Conference, IEEE, 691-694, Oct. 2016, Peer-reviwed, This paper describes the demonstrated GaN SPST MMIC switches based on HPF/LPF switching concept for high power applications. The developed MMIC switches indicate high isolation of more than 80-dB with insertion loss of better than 2 dB below 2.4 GHz. The effective chip size is 1.15 x 1.58 mm(2). The measured P1dB of insertion loss is 31.2-dBm. The isolation varies with respect to the input power from about 80-dB at small signal operation to about 40-dB for large signal input. The possible cause is the change of average FET off capacitance. This MMIC switches with HPF/LPF switching concept promises to provide new switch products having high power handling capability with low cost.
    International conference proceedings, English
  • Parallel Combination of High-Efficiency Amplifiers with Spurious Rejection for Concurrent Multiband Operation
    Jun Enomoto; Haruka Nishizawa; Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
    Proceedings of 46th European Microwave Conference, IEEE, 1075-1078, Oct. 2016, Peer-reviwed, An efficient concurrent multiband power amplifier configuration has been proposed for high-data-rate wireless communication systems. Single-band high-efficiency power amplifiers are designed by adding spurious rejection functions which are embedded in input and output fundamental-frequency matching circuits. And those amplifiers are connected in parallel. In this configuration, significant merits exist in comparison with usual dual-band or broadband amplifiers, especially with regard to distortion characteristics. To confirm this, a 4.5-18.5-GHz-band GaN HEMT amplifier was fabricated, and it exhibited maximum drain efficiencies of 64% and 54% and maximum power added efficiencies of 61% and 41% at 4.49GHz and 8.42 GHz, respectively, on a concurrent operation with a highly suppressed near-band spurious level of less than -38 dBc.
    International conference proceedings, English
  • InGaAs MMIC SPST Switch Based on HPF/LPF Switching Concept with Periodic Structure
    Hiroshi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
    IEEE Transactions on Microwave Theory and Techniques, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 64, 09, 2863-2870, Sep. 2016, Peer-reviwed, This paper presents the analysis of a novel highpass filter/low-pass filter (HPF/LPF) switching concept. Since an HPF/LPF switching concept has a periodic structure, its equivalent circuit is almost the same as an LPF for the ON-state and is the same as an HPF for the OFF-state. The broadband isolation characteristics with low insertion loss can be achieved by designing its cutoff frequency. A three-stage single pole single throw InGaAs pseudomorphic high electron mobility transistor monolithic microwave integrated circuit switch based on the HPF/LPF switching concept is successfully demonstrated with an insertion loss of less than 1.6 dB and isolation of more than 82 dB below 6 GHz, with a size of 1.1 mm x 1.0 mm. The RF performances are in good agreement with the theoretical calculations. The measured input power of 1-dB insertion loss compression, P1dB, and the measured third-order intercept point, IIP3, are 19 and 27.7 dBm, respectively, at 1.95 GHz. The measured ON-time is 5.5 ns without cable delay. The measured rise time is as fast as 1.4 ns.
    Scientific journal, English
  • Novel Design of Dual-band Reconfigurable Dipole Antenna Using Lumped and Distributed Elements
    Shoichi Onodera; Ryo Ishikawa; Akira Saitou; Kazuhiko Honjo
    IEICE Transactions on Communication, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E99-B, 07, 1550-1557, Jul. 2016, Peer-reviwed, A frequency-reconfigurable dipole antenna, whose dual resonant frequencies are independently controlled, is introduced. The antenna's conductor consists of radiating conductors, lumped and distributed elements, and varactors. To design the antenna, current distribution, input impedance, and radiation power including higher-order modes, are analyzed for a narrow-angle sectorial antenna embedded with passive elements. To derive the formulae used, radiation power is analyzed in two ways: using Chu's equivalent circuit and the multipole expansion method. Numerical estimations of electrically small antennas show that dual-band antennas are feasible. The dual resonant frequencies are controlled with the embedded series and shunt inductors. A dual-band antenna is fabricated, and measured input impedances agree well with the calculated data. With the configuration, an electrically small 2.5-/5-GHz dual-band reconfig-urable antenna is designed and fabricated, where the reactance values for the series and shunt inductors are controlled with varactors, each connected in series to the inductors. Varying the voltages applied to the varactors varies the measured upper and lower resonant frequencies between 2.6 and 2.9 GHz and between 5.1 and 5.3 GHz, where the other resonant frequency is kept almost identical. Measured radiation patterns on the H-plane are almost omni-directional for both bands.
    Scientific journal, English
  • Miniaturization of Double Stub Resonators using Lumped-Element Capacitors for MMIC Applications
    Shinichi Tanaka; Takao Katayose; Hiroki Nishizawa; Ken'ichi Hosoya; Ryo Ishikawa; Kazuhiko Honjo
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E99-C, 7, 830-836, Jul. 2016, Peer-reviwed, We present a design method for miniaturizing double stub resonators that are potentially very useful for wide range of applications but have limited usage for MMICs due to their large footprint. The analytical design model, which we introduce in this paper, allows for determining the capacitances needed to achieve the targeted shrinking ratio while maintaining the original loaded-Q before miniaturization. To verify the model, 18-GHz stub resonators that are around 40% of the original sizes were designed and fabricated in GaAs MMIC technology. The effectiveness of the proposed technique is also demonstrated by a 9-GHz low phase-noise oscillator using the miniaturized resonator.
    Scientific journal, English
  • Optimum Load Impedance Estimation for High-Efficiency Microwave Power Amplifier Based on Low-Frequency Active Multi-Harmonic Load-Pull Measurement
    Yao Tao; Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 2015 Asia Pacific Microwave Conference, IEEE, Dec. 2015, Peer-reviwed, An accurate design method for high-efficiency microwave power amplifiers based on a low-frequency active multi-harmonic load-pull measurement has been developed to obtain the optimum load impedance. Nonlinear capacitances as parasitic elements in a transistor are taken into account to improve accuracy of the optimum load impedance estimation in comparison with a previous method in which they are approximated with linear capacitances. A GaN HEMT amplifier designed and fabricated by the proposed method achieved a maximum power added efficiency (PAE) of 74% with 30.5 dBm output power at 2.13 GHz. As a comparison, a GaN HEMT amplifier designed and fabricated by the previous method exhibited maximum PAE of 64% with 31.0 dBm output power at 2.14 GHz, which was degraded than that for the proposed method.
    International conference proceedings, English
  • High Efficiency GaN HEMT Power Amplifier/Rectifier Module Design Using Time Reversal Duality (Invited)
    Kazuhiko Honjo; Ryo Ishikawa
    2015 IEEE Compound Semiconductor IC Symposim (New Orleans), IEEE, 227-230, Oct. 2015, Peer-reviwed, Invited, A general design theory for high efficiency microwave power amplifiers and rectifiers is presented using the time reversal duality concept. Effective techniques for achieving high efficiency microwave power amplifiers can also be implemented in the design of high efficiency rectifiers. As a design example, a harmonic reactive load type (class-R) GaN-HEMT power amplifier and its time reversed dual rectifier were developed at 5.4GHz. The fabricated amplifier delivered a maximum drain efficiency of 82%, whereas the rectifier presented 78% power efficiency. A DC-DC conversion efficiency of 47% was measured with the pulse-width modulation (PWM) technique for a wide dynamic power range of 90 mW to 860 mW.
    International conference proceedings, English
  • Analytical expression of broadband characteristics for wide-angle planar sectorial antennas
    Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    IEEE-APS Topical Conference on Antennas and Propagation in Wireless Communications (Torino), IEEE, 235-238, Sep. 2015, Peer-reviwed, Invited, Analytical expression of the characteristics for wide-angle planar sectorial antennas on a substrate is derived using the mode-expansion method, where higher-order modes for the phi orientation are included. With only eigenfunctions for theta, the mode expansion coefficients and input impedances are numerically estimated, and the broadband characteristics are shown to be realized for wide-angle antennas. Planar sectorial antennas with varied angles were fabricated on a FR-4 substrate, and the measured input impedances and measured radiation patterns agreed fairly well with the numerical data. However, for the wide-angle antenna, the measured radiation patterns at higher frequencies were the patterns for the higher-order mode for phi
    International conference proceedings, English
  • High-Efficiency DC-to-RF/RF-to-DC Interconversion Switching Module at C-Band
    Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 45th European Microwave Conference, IEEE, 295-298, Sep. 2015, Peer-reviwed, Both high-efficiency DC-to-RF and RF-to-DC conversions have been performed on a module with an impedance switching circuit connected at the gate side of a main GaN HEMT transistor. Here, two circuit configurations for an impedance switching circuit are proposed that use short/capacitance and open/short(inductance) switching circuits. These can be selected and utilised depending on the characteristics of the main transistor. At 5.36 GHz, the fabricated module delivered a maximum DC-to-RF efficiency (drain efficiency) of 76% and a maximum RF-to-DC efficiency of 66%.
    International conference proceedings, English
  • High Isolation MMIC Switch Design Technique Based on Novel High-/Low-Pass Switch Concept
    Hiroshi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 45th European Microwave Conference (Paris), IEEE, 56-59, Sep. 2015, Peer-reviwed, This paper describes the proposal of novel high/low-pass RF switch concept. This proposed RF switch concept is completely different from the conventional switch circuits because the broadband perfect reflection occurs in the off-state, which is essential to achieve broadband high isolation characteristics. By changing the gate bias of FETs between two states of high and low voltages, two functions can be switched between high-pass filter and low-pass filter. By utilizing the stopband of high-pass filter below its cut-off frequency, extremely high isolation can be achieved. And also, broadband low insertion loss can be obtained by using the passband below its cut-off frequency of low-pass filter. High isolation of more than 79 dB SPST MMIC switch with less than 1.6 dB insertion loss have been successfully demonstrated below 6 GHz by using this novel switch concept with small chip size of 1.1 mm x 1.0 mm.
    International conference proceedings, English
  • Simplified 5.8GHz-Band Variable Beam-Focusing Gaussian Beam Array Antenna
    Taihei Inoue; Ryo Ishikawa; Akira Saitou; Kazuhiko Honjo
    IEICE Transactions on Electronics B, J98-B, 09, 906-913, Sep. 2015, Peer-reviwed
    Scientific journal, Japanese
  • Digital Spatial Modulation using Dual Scatterers Embedded with Switches for Wireless Power Transmission Applications
    Kohei Hasegawa; Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E98-C, 7, 709-715, Jul. 2015, Peer-reviwed, A digital spatial modulation method has been demonstrated for a wireless power transmission system at 5.8 GHz. Interference of electromagnetic waves, which are radiated from the dual scatterers, successfully realizes the spatial modulation. The spatial modulation is performed with a digital modulation manner by controlling capacitances embedded in one of the dual scatterers so that the interference of the scattered waves is appropriately changed. Switch MMICs based on p-HEMT technology was newly developed for the spatial modulation. Measured insertion losses of the switch MMIC are 1.0 dB and 14 dB for on and off states at 5.8 GHz, respectively. The isolation is more than 20 dB. With the switch MMIC, digital spatial modulation characteristics were experimentally demonstrated at 5.8 GHz. One-bit amplitude shift keying (ASK) for 1 MHz signal was realized at 5.8 GHz, and two levels were clearly discriminated. The modulation factor is 36%. In addition, 2-bit ASK signal was detected at 7.1 GHz.
    Scientific journal, English
  • Power Gain Performance Enhancement of Independently Biased HBT Cascode Chip
    Duy Manh Luong; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Japanese Journal of Applied Physics (Accepted for publication), 応用物理学会, Vol. 54, 04DF11, 1-8, Apr. 2015, Peer-reviwed, The purpose of this research is to study the power gain performance of an independently biased cascode structure or a new cascode structure (NCS) in comparison to that of a conventional cascode structure (CCS) at 1.9GHz while investigating the bias conditions. We found that the bias collector current (I-c2) of the common-base (CB) or second-stage transistor is the key factor contributing to the power gain difference between a NCS and a CCS. By employing a monolithic microwave integrated circuit (MMIC) InGaP/GaAs heterojunction bipolar transistor (HBT), simulation and experimental results show that a NCS with higher I-c2 than that of a CCS can offer better power gain performance but less stability compared with a CCS. On the other hand, although a NCS with lower I-c2 than that of a CCS exhibits worse power gain performance compared with a CCS, it can be more stable than a CCS. All of the above indicate that a NCS can deliver superior radio frequency (RF) performance compared with a CCS by setting the appropriate bias conditions. (C) 2015 The Japan Society of Applied Physics
    Scientific journal, English
  • A Miniature Broadband Doherty Power Amplifier With a Series-Connected Load
    Shintaro Watanabe; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    IEEE Transactions on Microwave Theory and Techniques, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 63, 2, 572-579, Feb. 2015, Peer-reviwed, A microwave Doherty power amplifier (DPA) consists of a carrier amplifier (CA), a peaking amplifier (PA), and an impedance inverting network. In this paper, a novel DPA topology with neither the impedance inverting network nor offset lines is proposed. This topology enables the enhancement of amplifier bandwidth and achieves a more compact amplifier size. To remove the impedance inverting network and to realize high efficiency at large back-off power level, the output-matching network of the CA is designed to realize high performance both at a low signal power level in the off-state of the PA and at the saturated signal power level. A 1.9-GHz series-connected load Doherty power amplifier without an impedance inverting network is designed and fabricated using GaN HEMTs. The amplifier achieves a power-added efficiency (PAE) of 50% under a 6-dB output back-off from a 34-dBm saturated output power with a PAE of 59%. A maximum PAE higher than 44% is obtained over a frequency range of 1.63-1.98 GHz.
    Scientific journal, English
  • Experimental Parameter Extraction Method by Pulse Response Evaluation Applied to Multistage Thermal RC Ladder Circuit in Large-Signal HEMT Model for Analysis of Thermal Memory Effect
    Shingo Yoshida; Ryo Ishikawa; Kazuhiko Honjo
    IEICE Trans. C, IEICE, J97-C, 12, 456-462, Dec. 2014, Peer-reviwed
    Scientific journal, Japanese
  • General Design Theory for Microwave Power Amplifiers and Its Applications
    Kazuhiko Honjo; Yoichiro Takayama; Ryo Ishikawa
    Lead, IEICE Trans. C, IEICE, J97-C, 12, 446-455, Dec. 2014, Peer-reviwed, Invited, False
    Scientific journal, Japanese
  • Analytical Characteristic Expression for Dualband Antennas Embedded with Elements inside the Antenna
    Akira Saitou; Shoichi Onodera; Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 2014 Asia Pacific Microwave Conference, IEICE, IEEE-MTTS, FR1F-1, 971-973, 07 Nov. 2014, Peer-reviwed, An analytical expression for current distribution, input impedance, and radiation power including higher order modes, is derived for a thin sectorial antenna embedded with lumped and distributed elements. To obtain the formulae, radiation power is analyzed in two ways using Chu's equivalent circuit and the multipole expansion method. By numerical estimation of the formulae for electrically small antennas with the elements, dualband antennas are shown to be realized. The dualband antennas are fabricated, and measured input impedances agree well with the calculated data. Measured radiation patterns are omni-directional in the H-plane and the figure-of-eight in the E-plane for both the bands.
    International conference proceedings, English
  • Two Signal Power Level Design for Shunt-Connected Type GaN HEMT Doherty Power Amplifier without a Quarter-Wave Inverter
    Yosuke Iguchi; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 2014 Asia Pacific Microwave Conference, IEICE, IEEE-MTTS, FR2B-4, 1004-1006, 07 Nov. 2014, Peer-reviwed, A 1.9-GHz shunt-connected-type GaN HEMT Doherty power amplifier without a quarter-wave inverting network is designed and fabricated by introducing a two-RF-level circuit design procedure. Matching circuits for the carrier and peaking amplifiers are designed to realize optimum efficiency at low-RF (peaking amplifier off) and high-RF (saturated) signal levels. The compact amplifier achieved a maximum power added efficiency (PAE) higher than 50% at the 310-MHz bandwidth. The maximum PAE at an output power above 30 dBm was higher than 50% within the 1.68-1.99 GHz frequency range. A PAE higher than 40% at a 6-dB back-off from input power achieving maximum PAE was obtained over a wide frequency range of 1.67-1.99 GHz.
    International conference proceedings, English
  • Efficient Supply Power Control by PWM Technique for Microwave Wireless Power Transfer Systems
    Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 2014 Asia Pacific Microwave Conference, IEICE, IEEE-MTTS, FR3C-3, 1101-1103, 07 Nov. 2014, Peer-reviwed, A pulse-width modulation (PWM) technique has been applied for efficient supply power control in microwave wireless power transfer systems. For this evaluation, a high-efficiency GaN HEMT amplifier and rectifier operating at the 5.4-GHz band have been fabricated, which are used as a DC-to-RF and RF-to-DC converter, respectively. The fabricated amplifier and rectifier delivered a maximum drain efficiency of 82% at 5.43 GHz and a maximum RF-to-DC efficiency of 78% at 5.45 GHz, respectively. In the evaluation of the supply power control, a total system efficiency of more than 47% was maintained for a supply power change from 90 to 860mW by using the PWM technique.
    International conference proceedings, English
  • A 5.8-GHz Reconfigurable Power Divider for Wireless Power Transfer
    Yusuke Ohta; Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 2014 Asia Pacific Microwave Conference, IEICE, IEEE-MTTS, TH4D-1, 693-695, 06 Nov. 2014, Peer-reviwed, A Wilkinson-type reconfigurable power divider using varactor diodes has been designed and fabricated at 5.8 GHz. To vary the power-dividing ratio, T-type impedance transformers including varactor diodes were used instead of quarter-wavelength impedance transformers. In addition, a slight adjustment was applied to improve the return loss characteristics. The fabricated power divider exhibited a variation in the power-dividing ratio from -3.5 dB to 3.5 dB with an insertion loss of less than 2.1 dB, return losses of more than 11.0 dB, and an isolation of more than 14.8 dB at 5.8 GHz.
    International conference proceedings, English
  • Analysis on Rejection Band for a Practical Broadband Balun using an Asymmetric Coupled-line in Free Space
    Daiki Endo; Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 2014 Asia Pacific Microwave Conference, IEICE, IEEE-MTTS, WE1B-5, 28-30, 05 Nov. 2014, Peer-reviwed, A practical broadband balun with a higher band-edge frequency for a differential-mode antenna is demonstrated. The practical balun consists of an asymmetric broadside coupled line in free space and via-pads to connect to the antenna or soldering pads on the same surface. The rejection band for the balun with different configurations of the pads is analyzed with mixed-mode S-parameters, and the upper band-edge frequency is shown to increase by using the proposed pad configuration. A balun consisting of a 4-mm-long broadside coupled line and the proposed pads is designed and fabricated. The measured rejection band frequency is 13.4 GHz, and is higher by 2.0 GHz than that with conventional pads. The measured insertion loss is less than 2 dB between 0.41 and 12.3 GHz.
    International conference proceedings, English
  • A 2.1/2.6 GHz Dual-Band High-Efficiency GaN HEMT Amplifier with Harmonic Reactive Terminations
    Jun Enomoto; Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 44th European Microwave Conference, IEEE, EuMC Conference Proceedings, 544-547, 07 Oct. 2014, Peer-reviwed, A dual-band high-efficiency GaN HEMT amplifier with harmonic reactive source and load impedances has been developed at the 2.1-GHz and 2.6-GHz bands. Many circuit components are required for this type of amplifier, since many frequencies have to be treated, which induces circuit loss. Here, a design strategy to avoid an efficiency reduction due to circuit loss is introduced. The fabricated dual-band GaN HEMT amplifier has achieved maximum power-added efficiencies (PAEs) of 72% and 61% with 36.7- and 37.1-dBm output powers at 2.13 and 2.6 GHz, respectively.
    International conference proceedings, English
  • Comparison of Power Gain Performance between Conventional and Independently Biased HBT Cascode Chips
    Luong Duy Manh; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    International Conference on Solid State Devices and Materials (SSDM2014), Applied Physics Society of Japan, PS-6-1, 120-121, 10 Sep. 2014, Peer-reviwed
    International conference proceedings, English
  • Novel Design of Dual-band Reconfigurable Antennas Using Lumped-Elements and Varactors Located Inside Antenna's Conductor
    Shoichi. Onodera; Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    IEEE-APS Topical Conference on Antennas and Propagation in Wireless Communications (APWC2014), IEEE, 4th Edition, 221-224, 09 Aug. 2014, Peer-reviwed, Invited, A frequency reconfigurable dualband antenna is demonstrated, where the antenna's conductor consists of a radiating conductor, lumped and distributed elements, and varactors. An analytical expression for current distribution, input impedance, and radiated power is derived by connecting electromagnetic fields inside and outside the antenna's sphere for an electrically small antenna. With the formulae, input impedances are numerically estimated, and dual resonant frequencies are shown to be controlled almost independently by varying the value of a shunt inductor or a series inductor. The reconfigurable antenna is fabricated, where the varied reactances for the inductors are realized with series resonant circuits consisting of an inductor and a varactor. Measured upper and lower resonant frequencies are shown to be controlled by the applied voltage to the varactor between 2.60 and 2.91 GHz, and between 5.10 and 5.32 GHz, where the other resonant frequencies are almost identical.
    International conference proceedings, English
  • Novel Frequency Tunable CRLH Antenna for Reconfigurable Wireless Systems
    Hiroshi Mizutani; Naoya Watanabe; Tsunehiro Tanaka; Ryo Ishikawa; Kazuhiko Honjo
    International Conference on Electromagnetics in Advanced Applications (ICEAA2014), IEEE, 16th Edition, 434-437, 09 Aug. 2014, Peer-reviwed, This paper presents the novel frequency tunable CRLH-TL (Composite Right/Left-Handed transmission line) using varactor diodes for the reconfigurable wireless systems. Varactor diodes are implemented into the CRLH unit cell as the series capacitor. Proposed frequency tunable CRLH-TL indicates the variable EBG (Electromagnetic Band Gap) bandwidths with respect to the bias voltages. The demonstrated tunable CRLH-TL dominantly shows the broadside far-field radiation patterns for n=-1 resonance and the backward radiation patterns for n=-2 resonance.
    International conference proceedings, English
  • Power Gain Improvement for Single-Electron Transistors
    Manh Duy Luong; Kazuhiko Honjo
    Japanese Journal of Applied Physics, Applied Physics Society of Japan, Vol. 53, 04EJ03, 1-5, Apr. 2014, Peer-reviwed, In this paper, a novel approach for investigating the single-electron transistors (SET’s) power gain functionality which is one of the most important

    features of active devices related with operation speed performance is proposed. Moreover, an evaluating method is also introduced to improve the SET power gain due to the influence of junction thickness. It is found that source junction thickness is the key factor affecting the power gain. This important finding is illustrated by taking into account the physical parameters of a sample fabricated SET. According to proposed model, power gain can be improved by a remarkable amount of 39 dB at frequencies up to THz regime by reducing 1.25nm in source junction thickness.
    Scientific journal, English
  • A 2.1/2.6 GHz Dual-Band High-Efficiency GaN HEMT Amplifier with Harmonic Reactive Terminations
    Jun Enomoto; Ryo Ishikawa; Kazuhiko Honjo
    2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC), IEEE, 544-547, 2014, Peer-reviwed, A dual-band high-efficiency GaN HEMT amplifier with harmonic reactive source and load impedances has been developed at the 2.1-GHz and 2.6-GHz bands. Many circuit components are required for this type of amplifier, since many frequencies have to be treated, which induces circuit loss. Here, a design strategy to avoid an efficiency reduction due to circuit loss is introduced. The fabricated dual-band GaN HEMT amplifier has achieved maximum power-added efficiencies (PAEs) of 72% and 61% with 36.7- and 37.1- dBm output powers at 2.13 and 2.6 GHz, respectively.
    International conference proceedings, English
  • A High-Efficiency Low-Distortion Cascode Power Amplifier Consisting of Independently Biased InGaP/GaAs HBTs
    Yuki Takagi; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    IEICE Transactions on Electronics, IEICE, E97-C, 1, 58-64, Jan. 2014, Peer-reviwed, Microwave power amplifiers with independently biased

    InGaP/GaAs HBTs are proposed, and their superior performance is confirmed.Using harmonic balance simulation, the optimal bias conditions for an amplifier with two independently biased InGaP/GaAs HBTs were investigated with the aim of achieving high-efficiency low-distortion performance. A 1.9-GHz-band cascode power amplifier was designed and fabricated. Power efficiencies and third-order intermodulation distortions (IMD3) for the fabricated amplifier were estimated. The collector bias voltage of the first stage transistor mainly affects power-added efficiency (PAE). The base bias current of the first-stage HBT mainly affects IMD3 characteristics, and that of the second-stage HBT mainly affects PAE. The proposed amplifier shows superior per-formance when compared to a conventional

    cascode amplifier. The amplifier achieved a maximum PAE of 68.0% with an output power of 14.8 dBm, and IMD3 better than ����35 dBc with a PAE of 25.1%, for a maximum output power of 10.25 dBm at 1.9 GHz. A PAE of more than 60% was achieved from 1.87 to 1.98 GHz.
    Scientific journal, English
  • Frequency Characteristic of Power Efficiency for 10 W/30W-Class 2 GHz Band GaN HEMT Amplifiers with Harmonic Reactive Terminations
    Tomohiro Yao; Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo; Hiroyoshi Kikuchi; Takashi Okazaki; Kazuhiro Ueda; Eiichiro Otobe
    Proceedings of 2013 Asia Pacific Microwave Conference (APMC2013), P1-21, 745-747, Nov. 2013, Peer-reviwed, An increase in amplifier efficiency is generally accompanied by a narrow bandwidth characteristic, especially when used with distributed transmission lines, since higher harmonics have to be treated. The frequency dependence of harmonic reactive terminations using transmission lines has been discussed for a high-efficiency amplifier design. In simulation, the designed amplifiers showed steep efficiency degradation due to a small source-side impedance shift for the second-order harmonic frequency. Therefore, both the source- and load-side circuits have to be optimized simultaneously. Fabricated 10-W and 30-W class GaN HEMT amplifiers including DC bias circuits exhibited a maximum drain efficiency of 81% at 1.98GHz and 77% at 1.95 GHz, respectively. © 2013 IEEE.
    International conference proceedings, English
  • Analytical Expression of Linear Antenna’s Characteristics Using Multipole Expansion and Chu’s Equivalent Circuit
    Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 2013 Asia Pacific Microwave Conference (APMC2013), IEEE, F2F-2, 585-587, Nov. 2013, Peer-reviwed, Analytical expression including higher-order modes for a linear dipole antenna is derived with the multipole expansion and Chu's equivalent circuits. Current distribution on the antenna's conductor and loss caused by the radiation are consistently combined. Input power at the port is approximated to be guided totally on the conductor up to an effective antenna's radius, and to propagate in free space beyond the radius. The circuit for the power to propagate in free space is expressed by Chu's equivalent circuits for all the TM modes. With the derived formulae, numerical estimations of the current distributions and input impedances are shown up to 3rd-order-mode's resonant frequency. The numerical data are compared with measured data for the antennas with different line widths, and the data are shown to agree well.
    International conference proceedings, English
  • A 1.2-2.0 GHz-band GaAs pHEMT Cascode Power Amplifier MMIC Consisting of Independently Biased Transistors
    Satoshi Tasaki; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 2013 Asia Pacific Microwave Conference (APMC2013), P1-21, 722-724, Nov. 2013, Peer-reviwed, An L-band wideband cascode power amplifier MMIC with independently biased GaAs pHEMTs is developed. This amplifier can independently control distortion and power-efficiency, achieved a power-added efficiency (PAE) above 53% from 1.2 to 2.0 GHz and third-order intermodulation distortion (IMD3) better than -40 dBc with a maximum PAE of 33.3% for a maximum output power of 17.0 dBm, and showed superior performance compared to a conventional cascode amplifier. © 2013 IEEE.
    International conference proceedings, English
  • Multi-band Reconfigurable Antennas Embedded with Lumped-Element Passive Components and Varactors
    Shoichi Onodera; Ryo Ishikawa; Akira Saitou; Kazuhiko Honjo
    Proceedings of 2013 Asia Pacific Microwave Conference (APMC2013), IEEE, W2D-2, 137-139, Nov. 2013, Peer-reviwed, Frequency reconfigurable dual-band antennas with varactor diodes have been demonstrated. An equivalent circuit that takes both coupling with free space and an antenna conductor embedded with lumped-elements into consideration is proposed for the design of reconfigurable antennas. By means of the equivalent circuit, reconfigurable antennas that independently control dual-band resonant frequencies were designed and fabricated with a parallel circuit with an inductor and a varactor. The lower resonant frequency was successfully controlled between 1.60 and 1.91 GHz, and the upper resonant frequency was controlled between 3.32 and 3.71 GHz. Measured gains were more than -9.8 dBi in the lower band, and more than -7.3 dBi in the upper band, respectively. To improve the gain, a reconfigurable antenna with a series circuit of an inductor and a varactor was also fabricated for the lower band. Measured gains have been improved to more than -4 dBi in the lower band.
    International conference proceedings, English
  • Reversible High Efficiency Amplifier/Rectifier Circuit for Wireless Power Transmission System
    Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 2013 Asia Pacific Microwave Conference (APMC2013), IEEE, W1F-1, 74-76, Nov. 2013, Peer-reviwed, A reversible high-efficiency amplifier/rectifier circuit using one transistor has been proposed. For the gate side of the transistor, an input circuit for the amplifier and a gate adjusting circuit for the rectifier are prepared. By switching the circuits, the operation mode is changed. For the drain side of the transistor, a harmonic treatment circuit can be shared by both operations. The harmonic treatment induces high-efficiency operation not only for the amplifier, but also for the rectifier. To verify both operations, a GaAs pHEMT amplifier and a rectifier which varied only the gate-side circuit were designed and fabricated at 5.8 GHz. The fabricated amplifier exhibited a maximum drain efficiency of 71%, and the fabricated rectifier exhibited an RF-to-DC conversion efficiency of 68%.
    International conference proceedings, English
  • Microwave Power Transfer Evaluation at 2.45 GHz Using a High-Efficiency GaAs HEMT Amplifier and Rectifier
    Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 43rd European Microwave Conference (EuMC2013), IEEE, EuMIC49-4, 916-919, Oct. 2013, Peer-reviwed, Microwave power transfer has been evaluated at 2.45GHz by using a high-efficiency InGaAs/GaAs pHEMT amplifier and rectifier. The same type of HEMT and harmonic treatment circuit were used for both the amplifier and the rectifier. Harmonic reactive terminations up to the fifth order were applied to the harmonic treatment circuits to obtain a high-efficiency characteristic. The fabricated amplifier and rectifier delivered a maximum drain efficiency of 78% and a maximum RF-to-DC efficiency of 77% at 2.45 GHz, respectively. In addition, a total DC-to-DC efficiency of 57% for the microwave power transfer via a 0.5-m coaxial cable was obtained by using the fabricated amplifier and rectifier.
    International conference proceedings, English
  • Analytical Design Method for a Low-Distortion Microwave InGaP/GaAs HBT Amplifier Based on Transient Thermal Behavior in a GaAs Substrate
    Ryo Ishikawa; Junichi Kimura; Kazuhiko Honjo
    IEEE Transactions on Components, Packaging and Manufacturing Technology, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 3, 10, 1705-1712, Oct. 2013, Peer-reviwed, Based on the transient thermal behavior in a GaAs substrate, the distortion caused by the self-heating effect in an InGaP/GaAs heterojunction bipolar transistor (HBT) has been analytically compensated. The temperature-time variation in a transistor depends on the thermal characteristics of a semiconductor substrate at the base-band range. For a wideband digital modulated signal as input, a multistage thermal resistor-thermal capacitor ladder circuit is used as a model to emulate the thermal characteristics. The distortion analysis is based on Taylor and Volterra series expansion techniques including both electrical and thermal effects. In addition, a compensation condition for the distortion caused by the thermal influence is also successfully derived based on distortion analysis. The validity of the proposed analytical method is shown for an InGaP/GaAs HBT power amplifier operating at 1.95 GHz. The analytical design results are in good agreement with the measured results.
    Scientific journal, English
  • Spatially modulated communication method using dual scatterers embedded with lumped elements for wireless power transmission
    Akira Saitou; Kohei Hasegawa; Ryo Ishikawa; Kazuhiko Honjo
    IEICE Transactions on Communications, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E96-B, 10, 2425-2430, Oct. 2013, Peer-reviwed, A novel spatially modulated communication method, appropriate for wireless power transmission applications at 5.8 GHz, is proposed using dual scatterers embedded with lumped elements. Analytical expression for the received wave in the spatial modulation is derived, and the characteristics are verified with simulation and measurement by varying the embedded capacitor. The maximum measured variation of the received voltage is more than 15 dB and that of the phase is more than 270 degrees at 5.8 GHz. The estimated amplitude modulation factor is more than 70%. Using the data obtained, we estimate the practical received waveforms modulated by the applied voltage to a varactor for the amplitude modulation scheme.
    Scientific journal, English
  • Bi-Directional Wireless Power Transfer Technology for Wireless Sensor/Power Networks
    Keito Ota; Hiroshi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
    2013 IEEE-APS Topical Conference on Antennas and Propagation in Wireless Communications, IEEE Computer Society, 3rd Edition, 786-789, Sep. 2013, Peer-reviwed, This study approaches a new proposal for 'the wireless power networks (WPNs)'. Injecting the wireless ad-hoc networks with newly bi-directional power transfer has the advantage of stabilizing networks operation when a power source happens to broke down. This research putting network at forefront, proves that make a fundamental demonstration for bi-directional wireless power transfer (BD-WPT) system using an electric resonant coupler to an experimental level of WPNs. There is also the fact that, a space modeling deliberates an equivalent circuit of the coupler. WPNs are thought to make a large contribution to stable operation, and consequently making save wireless sensor networks. © 2013 IEEE.
    International conference proceedings, English
  • Novel Active CRLH Transmission Lines Incorporating FETs
    Hiroshi Mizutani; Keito Ota; Ryo Ishikawa; Kazuhiko Honjo
    7th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, IEEE, I-41, Sep. 2013, Peer-reviwed, In this paper, the novel active composite right/left-handed transmission lines (CRLH-TLs) are presented incorporating FETs for the reconfigurable antennas. The demonstrated CRLH-TL with three FETs has four states with respect to the bias combination of the FETs. The measured characteristics of the developed active CRLH-TL indicate two states of the radiation and the reflection with the bias combination. In the case of the radiation state, the backward radiations are observed from the EM simulation in the left-handed (LH) region. The proposed active CRLH-TLs incorporating FETs provide the reconfigurable characteristics for the leaky wave antenna.
    International conference proceedings, English
  • Power Gain Characteristic of Single-Electron Transistors (SETs)
    Luong Duy Manh; Kazuhiko Honjo
    International Conference on Solid State Devices and Materials (SSDM2013), PS-9-4, 302-303, Sep. 2013, Peer-reviwed
    International conference proceedings, English
  • Novel Design Method for Electrically Symmetric High-Q Inductor Fabricated Using Wafer-Level CSP Technology
    Yutaka Aoki; Shoichi Shimizu; Kazuhiko Honjo
    IEEE Transactions on Components, Packaging and Manufacturing Technology, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 3, 01, 31-39, Jan. 2013, Peer-reviwed, High-Q spiral inductors are described that are embedded in the wafer-level chip-size package (WLP) and suffer from unfavorable two-port asymmetric characteristics. To solve this problem, a novel clip-type inductor is proposed, where an electrode crossover point in multiturn inductor structures is modified from a conventional mirror symmetric point to a novel electrical symmetric point. These novel clip-type inductors are designed and fabricated using the WLP technology. By means of a developed 4 nH novel clip inductor, a Q factor value difference between the two ports can be significantly reduced to 1.4% from 14.8% at 1.4 GHz. The Q factors of developed inductors are evaluated under both a conventional shortcircuited load condition and an impedance-matched condition. In addition, a novel evaluation method for inductance values for inductors is also described. By using newly derived formulas, inductance values for a fabricated WLP clip-type inductor and a fabricated meander-type inductor are evaluated. This method represents the inherent nature of inductor devices under test including circuit parasitic elements.
    Scientific journal, English
  • Experimental Design Method for GHz-Band High-Efficiency Power Amplifiers Based on MHz-Band Active Harmonics Load-Pull Technique
    Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
    Proceedings of 2012 Asia Pacific Microwave Conference, IEEE, 3B1, 06, 478-480, Dec. 2012, Peer-reviwed, We propose an experimental design method for GHz-band high-efficiency power amplifiers based on a MHz-band active load-pull technique that includes harmonics tuning. By considering reactive parasitic elements in the transistor, an optimum load condition in the GHz-band can be predicted with the MHz-band evaluation method. The active load-pull system is easily constructed by using a commercial arbitrary waveform generator and oscilloscope. Therefore, a load circuit design depending on the specific properties of the transistor can easily be achieved. A load circuit for a 1.9-GHz operation has been experimentally designed based on 20-MHz-band active load-pull measurement.
    International conference proceedings, English
  • A Broadband Doherty Power Amplifier without a Quarter-Wave Impedance Inverting Network
    Shintaro Watanabe; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 2012 Asia Pacific Microwave Conference, IEEE, 3A1, 03, 361-363, Dec. 2012, Peer-reviwed, A new Doherty power amplifier topology without a quarter-wave impedance inverting network is proposed. This topology enables the enhancement of amplifier bandwidth and achieves a more compact amplifier size. In order to remove an inverting network, the output matching network of the carrier amplifier is designed to realize high performance both at a low-RF level in the off-state of a peaking amplifier and at the RF saturation level. A 1.9-GHz Doherty amplifier without a quarter-wave impedance inverting network was designed and fabricated using GaN HEMTs. A series-connection-type amplifier using an output-combining balun was realized in a lumped-element circuit configuration. The amplifier achieved a power-added efficiency ( PAE) of 51% at an output power of 29 dBm under an 11-dB input back-off from a 34-dBm saturated output power with a power-added efficiency of 59%. A maximum PAE higher than 48% was obtained over a frequency range of 1.67 to 1.97 GHz.
    International conference proceedings, English
  • Parameter Extraction of c- and π- modes for Broadband Balun Using an Asymmetric Coupled Line
    Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 2012 Asia Pacific Microwave Conference, IEEE, 2A2, 03, 22-24, Dec. 2012, Peer-reviwed, Miniature broadband 1: 1 baluns for differential mode antennas are exhibited with an asymmetric broadside coupled line in an inhomogeneous medium. To design characteristics of a balun for both the in-band and the rejection band, c-and pi -mode parameters for the coupled lines are extracted by both simulation and measurement. The rejection band of the broadband balun is shown to be caused by the c-mode transmission. With the extracted parameters, optimal line dimensions are obtained for 50 Omega single-mode input and differential-mode output port impedances. Measured fractional bandwidth is as wide as 178% for the 0.2-mm-wide broadside coupled line in a 1-mm-thick multi-layer FR-4 substrate.
    International conference proceedings, English
  • Spatially Modulated Communication Method Using Dual Scatterers for Wireless Power Transmission
    Kohei Hasegawa; Ryo Ishikawa; Akira Saitou; Kazuhiko Honjo
    Proceedings of the 42nd European Microwave Conference, IEEE, EuMIC/EuMC01-4, 587-590, 29 Oct. 2012, Peer-reviwed, A novel spatially modulated communication method with electrically controlled dual scatterers has been proposed for wireless power transmission systems. Electromagnetic wave interference produced by the scatterers forms the spatial modulation, whose precise mechanism has been successfully formulated using the array factor theory. The scatterers are formed by lumped-element embedded miniature antennas, which are short-circuit terminated. One of those scatterers includes an integrated voltage-controlled varactor for changing the array factor. For a frequency range from 5.5 to 6.2 GHz, a fabricated module exhibits an excellent spatial modulation potential with a dynamic range of 9.6 to 19.9 dB. The spatial modulation experiment was carried out using base-band signals such as sine-waves and square-waves. A measured AM-modulation factor of 60% was achieved.
    International conference proceedings, English
  • Ultra High Efficiency Microwave Power Amplifier for Wireless Power Transmission (Invited Paper)
    Kazuhiko Honjo; Ryo Ishikawa; Yoichiro Takayama
    Proceedings of the 42nd European Microwave Conference, IEEE, APMC-02, 1339-1342, 29 Oct. 2012, Peer-reviwed, Invited, Realizing ultra-high-efficiency power amplifiers operating at 5.8 GHz is a key issue for wireless power transmission such as space solar-power satellite systems and wireless smart-grid short-distance power supply systems. To achieve ultra-high efficiency, current and voltage waveform control is indispensable to eliminate power dissipations at the harmonic frequencies and to keep a balance between the supplied DC power and the 5.8-GHz output power. This paper reports optimized design techniques, including class-F, inverse class-F, and reactive harmonic load amplifiers. The developed GaN HEMT amplifier delivered a record-high drain efficiency of 90% and a power-added efficiency (PAE) of 79%.
    International conference proceedings, English
  • Parasitic-Element Compensation Based on Factorization Method for Microwave Inverse Class-F/Class-F Amplifiers
    Osamu Miura; Ryo Ishikawa; Kazuhiko Honjo
    IEEE Microwave and Wireless Components Letters, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 22, 10, 1-3, Oct. 2012, Peer-reviwed, A novel parasitic-element compensation design method with a combination of factorization and coefficient comparison for microwave inverse class-F/class-F amplifiers is proposed. This novel method is applicable to all circuit topologies, including L - C parallel and series resonance circuits, and ladder circuits with arbitrary order of the higher harmonic frequencies. The validity of the proposed method has been checked with a fabricated 1.9 GHz inverse class-F GaN-HEMT power amplifier, considering harmonic frequencies up to the fourth order. A drain efficiency of 77% and power added efficiency of 70% were obtained at 1.88 GHz.
    Scientific journal, English
  • Spatial Modulation Module Consisting of a Microstrip Array Antenna and Dual Scatterers for Wireless Power Transmission
    Taihei Inoue; Kohei Hasegawa; Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 2012 International Symposium on Antenna and Propagation, 2E2-3, 459-462, Oct. 2012, Peer-reviwed
    International conference proceedings, English
  • Novel Spatial Modulation Method Using Dual Scatterers for Wireless Power Transmission
    Akira Saitou; Kohei Hasegawa; Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 2012 International Symposium on Antenna and Propagation, 1E3-2, 162-165, Oct. 2012, Peer-reviwed
    International conference proceedings, English
  • 5.65-GHz High-Efficiency GaN HEMT Power Amplifier with Harmonics Treatment up to Fourth Order
    Masahiro Kamiyama; Ryo Ishikawa; Kazuhiko Honjo
    IEEE Microwave and Wireless Components Letters, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 22, 6, 315-317, Jun. 2012, Peer-reviwed, A high-efficiency GaN HEMT power amplifier with harmonics treatment up to the fourth order has been developed at the 5.8 GHz band. The harmonics treatment was applied by considering the influence of feedback and shunt capacitance in the GaN HEMT, to reduce the average power consumption in a GaN HEMT including parasitic elements. The fabricated GaN HEMT amplifier delivered a maximum power-added efficiency of 79% and a maximum drain efficiency of 90% at 5.65 GHz, and the saturated output power was 33.3 dBm. This value represents state-of-the-art C-band performance efficiency.
    Scientific journal, English
  • Miniaturized Broadband Antenna Combining Fractal Patterns and Self-Complementary Structures for UWB Application
    Vasil Dimitrov; Akira Saitou; Kazuhiko Honjo
    IEICE Transactions on Communication, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E95-B, 05, 1844-1847, May 2012, Peer-reviwed, Miniaturized broadband antennas combining a fractal pattern and a self-complementary structure are demonstrated for UWB applications. Using four kinds of fractal patterns generated with an octagon initiator, similar to a self-complementary structure, we investigate the effect of the fractal pattern on broadband performance. The lower band-edge frequency of the broad bandwidth is decreased by the reduced constant input impedance, which is controlled by the vacant area size inside the fractal pattern. The reduced constant input impedance is shown to be produced by the extended current distribution flowing along the vacant areas. Given the results, miniaturized broadband antennas, impedance-matched to 5052, are designed and fabricated. The measured return loss was better than 10 dB between 2.95 and 10.7 GHz with a size of 27 x 12.5 mm. The lower band-edge frequency was reduced by 28% compared with the initiator.
    Scientific journal, English
  • A Novel High-Frequency Analysis and Modeling for the Printed-Circuit Board Using Enhanced Optimized Segment Extraction Method with Multi-Port S-Parameter
    Hirobumi Inoue; Kazuhiko Honjo
    International Conference on Electronics Packaging (ICEP-IAAC 2012) Proceedings, 628-633, May 2012, Peer-reviwed
    International conference proceedings, English
  • Extension of EOSE Method to Weak Nonlinear Systems and Its application to InGaP/GaAs HBT MMIC Parallel Tracks
    Hirobumi Inoue; Ryo Ishikawa; Kazuhiko Honjo
    International Conference on Electronics Packaging (ICEP-IAAC 2012) Proceedings, 634-638, May 2012, Peer-reviwed
    International conference proceedings, English
  • A High-Efficiency, Low-Distortion GaN HEMT Doherty Power Amplifier with a Series Connected Load
    Satoshi Kawai; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    IEEE Transactions on Microwave Theory and Techniques, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 60, 2, 352-360, Feb. 2012, Peer-reviwed, A distortion reduction method for a newly developed GaN HEMT Doherty amplifier (DA) with a series-connected load operating at 1.8 GHz is presented. Differing from conventional DAs with shunt-connected loads, the newly developed DA with a series-connected load has high input impedance, resulting in low-loss impedance matching and high-efficiency power combining. A distortion cancellation mechanism and its condition are derived, where odd-order nonlinear factors of transistors are considered, so as to retain inherent distortion cancellation between a peaking amplifier and a carrier amplifier. The validity of the design method is demonstrated using the developed 1.8-GHz GaN HEMT DA with a series-connected load. The third-order intermodulation distortion of the DA is improved by more than 15 dB at output powers from 5 to 20 dBm, compared to the case giving priority to power efficiency. The developed amplifier delivers a power-added efficiency (PAE) of 31% at an output power of 24 dBm, corresponding to 10-dB input backoff from a saturated output power of 31 dBm with a PAE of 58%. The proposed distortion reduction method can also be applied to shunt-connected-load-type amplifiers of other devices.
    Scientific journal, English
  • Spatially Modulated Communication Method Using Dual Scatterers for Wireless Power Transmission
    Kohei Hasegawa; Ryo Ishikawa; Akira Saitou; Kazuhiko Honjo
    2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), IEEE, 587-590, 2012, Peer-reviwed, A novel spatially modulated communication method with electrically controlled dual scatterers has been proposed for wireless power transmission systems. Electromagnetic wave interference produced by the scatterers forms the spatial modulation, whose precise mechanism has been successfully formulated using the array factor theory. The scatterers are formed by lumped-element embedded miniature antennas, which are short-circuit terminated. One of those scatterers includes an integrated voltage-controlled varactor for changing the array factor. For a frequency range from 5.5 to 6.2 GHz, a fabricated module exhibits an excellent spatial modulation potential with a dynamic range of 9.6 to 19.9 dB. The spatial modulation experiment was carried out using base-band signals such as sine-waves and square-waves. A measured AM-modulation factor of 60% was achieved.
    International conference proceedings, English
  • Directivity Control by Asymmetrically Fed Dipole Antenna with PIN Diode Switches
    Yuuya Hoshino; Akira Saitou; Kazuhiko Honjo
    IEICE Transactions on Communication, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E95-B, 01, 106-108, Jan. 2012, Peer-reviwed, A feed-point-selective, asymmetrically fed dipole antenna has been proposed for multiple-input multiple-output (MIMO) applications. By using PIN diode switches, an asymmetrical antenna feed is realized so as to control antenna directivities. The two basic requirements for MIMO antenna radiation patterns, namely, a decrease in overlap and control in direction, have been achieved. Additionally, to enhance directivities for the antenna with PIN diodes, a reflector has been introduced. The gain toward the reflector decreased by 2 dB, while the gain in the direction of the maximum gain increased by 2 dB. The developed antenna can correspond to a variable power angular spectrum (PAS).
    Scientific journal, English
  • Spatial Modulation using Array Factor Control for Smart Grid Wireless Power Transmission
    Kohei Hasegawa; Yuuya Hoshino; Ryo Ishikawa; Akira Saitou; Kazuhiko Honjo
    Proceedings of Asia Pacific Microwave Conference 2011, IEEE, WE3E-02, 837-840, Dec. 2011, Peer-reviwed, A novel spatial modulation method has been proposed for the smart grid wireless power transmission systems. In this method, signals are applied to reflectors placed near antennas of a main power transmission system, and a part of the main beam is modulated by the reflectors, with the minimum influence to the main power beam. The reflector is terminated by a variable impedance device which is controlled by base-band signals. Thus, a directivity including phase shift is modulated. To analyze the system, the array factor theory was used. To demonstrate validity of the proposed method, an experiment using a monopole antenna and a monopole reflector were carried out, where AM modulation index of 6% was observed in a specified direction.
    International conference proceedings, English
  • Analytical Design Method for Thermal Memory Effect Compensation Circuit in Microwave Power Amplifiers
    Ryo Ishikawa; Junichi Kimura; Kazuhiko Honjo
    Proceedings of Asia Pacific Microwave Conference 2011, IEEE, TU5P-27, 315-318, Dec. 2011, Peer-reviwed, An analytical design method based on Volterra series including both electrical effects and thermal effects is presented for compensating thermal memory effects in microwave power amplifiers. By using an electrical memory-effect-generation circuit consisting of a multi-stage RC ladder network, the thermal memory effect is directly canceled. Analytical formulas for this canceling condition and circuit parameters have been successfully derived. The validity of the proposed analytical method has been shown for an InGaP/GaAs HBT power amplifier operating at 1.95 GHz. The analytical design results are in good agreement with measured results.
    International conference proceedings, English
  • Miniaturized dual-band differential-mode printed antennas embedded with broadband balun
    Akira Saitou; Ryo Ishikawa; Yutaka Aoki; Kazuhiko Honjo
    Proceedings of Asia Pacific Microwave Conference 2011, IEEE, TH1D-03, 1298-1301, Dec. 2011, Peer-reviwed, A miniaturized dual-band differential-mode antenna with a broadband 1: 1 balun is integrated in a 1-mm thick multi-layer PCB substrate. A broadband balun for the 2.5 GHz and 5.2 GHz dual-band, was designed and fabricated with a broadside-coupled line structure. With a proposed deembedding method, mixed-mode S-parameters of the unit balun were extracted with measured data. Simulated and measured return losses were better than 12 dB in the dual-band. With the balun, a miniaturized dual-band antenna embedded with lumped-elements was integrated. The lumped elements were also used for impedance-matching with the balun. The size is 60 % smaller than the half-wave dipole antenna. Measured return loss of the integrated antenna connected to a coaxial cable was 15.3 dB at 2.5 GHz and 24.1 dB at 5.2 GHz. Measured gain was almost omni-directional in both the bands. The maximum gain was -0.5 dBi at 2.5 GHz and 1.1 dBi at 5.2 GHz.
    International conference proceedings, English
  • Extraction Method with multi-port S-parameter considering coupling between transmission lines
    Hirobumi Inoue; Kazuhiko Honjo
    JIEP(Japan Institute of Electronics Packaging) Transactions, 14, 7, 555-565, Nov. 2011, Peer-reviwed, Electronic products such as telecommunication systems, computers, and digital consumer electronics have come to require high-speed and high-density packaging. High-frequency electromagnetic field analysis is used for the printed-circuit board design of these products. For the analysis of the GHz-frequency characteristics of antennas, filters, resistors, capacitors, inductors and passive elements in wiring patterns, electromagnetic field analysis has proven to be suitable for the measurement well. However, a printed-circuit board is a large collection of interconnects, and even if a high-end personal computer is used, the analysis takes several days at least. Therefore, before fabrication, albeit is impossible to verify various aspects of the electromagnetic field analysis. Generally, if the analysis time has to be shortened from days to minutes, the subdivision modeling technique is used. In this case, the high-frequency analysis accuracy is unsatisfactory. In this paper we propose instead an accurate electromagnetic field solver for high-frequency characterization as a subdivision modeling technique using an EOSE (Enhanced Optimized Segment Extraction) method with multi-port S-parameter consideration of the coupling between transmission lines, based on the original, OSE (Optimized Segment Extraction) method. We evaluated this EOSE method for analysis time and high-frequency analysis accuracy in a multilayer printed-circuit board with via connections. The analysis time was confirmed to be about 1/6 that of the result analyzed in the whole of the structure. Furthermore, the analytic precision error was within 0.5 dB in the 5-8 GHz range when dividing in the continuous part of the transmission line. From these results, we showed the validity of this proposal technique.
    Scientific journal, Japanese
  • High-Efficiency, Low-Distortion Microwave Cascode Power Amplifier with Independently Biased AlGaN/GaN HEMTs
    Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
    Proceedings of 2011 Korea-Japan Microwave Conference, 78-81, Nov. 2011, Peer-reviwed
    International conference proceedings, English
  • A predistortion diode linearizer technique with automatic average power bias control for a class-F GaN HEMT power amplifier
    Akihiro Ando; Yoichiro Takayama; Tsuyoshi Yoshida; Ryo Ishikawa; Kazuhiko Honjo
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E94-C, 7, 1193-1198, Jul. 2011, Peer-reviwed, A novel predistortion technique using an automatic average-power bias controlled diode is proposed to compensate the complicated nonlinear characteristics of a microwave class-F power amplifier using an AlGaN/GaN HEMT. The optimum value for diode bias voltage is automatically set according to detected input average RF power level. A high-efficiency 1.9 GHz class-F GaN HEMT power amplifier with the automatic average-power bias control (ABC) diode linearizer achieves an improved third order inter-modulation distortion (IMD3) of better than -45 dBc at a smaller than 6 dB output power back-off from a saturated output power of 27 dBm, without changing drain efficiency. The adjacent channel leakage power ratio (ACPR) for 1.9 GHz W-CDMA signals is below -40 dBc at output power levels of smaller than 20 dBm for the class-F power amplifier.
    Scientific journal, English
  • UWB Active Balun Design with Small Group Delay Variation and Improved Return Loss
    Kyoung-Pyo Ahn; Ryo Ishikawa; Kazuhiko Honjo
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E94-C, 5, 905-908, May 2011, Peer-reviwed, Different from distributed baluns, active baluns have group delay variations in the lower bands related to inherent internal capacitances and resistance in transistors. A negative group delay (NGD) circuit is employed as a compensator of group delay variation for an ultrawideband (UWB) active balun. First, three-cell NGD circuit is inserted into a simple active balun circuit for realizing both group delay compensation and return loss improvement. The simulated results show a group delay variation of 4.8 Ps and an input return loss of above 11.5 dB in the UWB band (3.1-10.6 GHz). Then, a pair of one-cell NOD circuits is added to reduce the remaining group delay variation (3.4 Ps in simulation). The circuit with the NOD circuits was fabricated on an InGaP/GaAs HBT MMIC substrate. The measured results achieved a group delay variation of 7.7 Ps, a gain variation of 0.5 dB, an input return loss of greater than 10 dB, and an output return loss of larger than 8.1 dB in the UWB band.
    Scientific journal, English
  • Distributed Class-F/Inverse Class-F Circuit Considering up to Arbitary Harmonics with Parasitics Compensation
    Ryo Ishikawa; Kazuhiko Honjo
    2011 IEEE MTT-S Internatinal Microwave Workshop Series on Innovative Wireless Power Transmission, IWPT2-1, 29-32, May 2011, Peer-reviwed, Class-F and inverse class-F load circuits that can be treated up to arbitrary harmonics have been presented. The class-F and inverse class-F load circuits are designed so that influence of parasitic elements at a transistor is compensated. By using distributed circuit elements, the class-F and inverse class-F amplifier can operate at C-band. The design method mainly for the inverse class-F load circuit is described. Using ideal transmission line model, a designed inverse class-F considering up to the fifth order harmonics exhibits power added efficiency of about 80% in simulation. © 2011 IEEE.
    International conference proceedings, English
  • Microwave Inverse Class-F GaN HEMT Amplifier Circuit using Internal Harmonic Treatment Network
    Tsuyoshi YOSHIDA; Ryo ISHIKAWA; Kazuhiko HONJO
    IEICE Transactions C, The Institute of Electronics, Information and Communication Engineers, J93-C, 12, 557-564, Dec. 2010, Peer-reviwed, マイクロ波帯で使用する高出力トランジスタパッケージには,50Ω系での使用を目的にパッケージ内のトランジスタチップ近傍に小型内部整合回路が設けられている.一方で,高効率動作を実現するF級,逆F級などではトランジスタ近傍で高調波処理を行う必要性がある.そこで,今回,パッケージ内部に内蔵可能である小型の内部高調波処理用回路(IHN:Internal Harmonic treatment Network)の試作及び評価を行った.まず,集中定数受動素子で構成される高調波処理回路をGaAs MMICプロセスを利用して設計・試作し,基本波2GHz帯での四次高調波まで処理したF級,逆F級高調波処理回路の特性を確認した.次に,逆F級について,このIHNをGaN HEMT素子に適用し,基本波ロードプルを行った場合の特性をシミュレーション及び実験で確認し,シミュレーションにおいてPAE70%以上の高効率動作を確認した.一方で,実測では抵抗損失等による効率低下が確認された.そこで,IHNの損失に関する解析を行い,効率への影響を詳細に調べた.
    Scientific journal, Japanese
  • Distortion Reduction of a GaN HEMT Doherty Power Amplifier with a Series Connected Load
    Satoshi Kawai; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of Asia Pacific Microwave Conference 2010, IEEE, TH1E-02, 658-661, Dec. 2010, Peer-reviwed, Doherty introduced two types of concepts for high-efficiency linear amplifiers in 1936. One has a shunt connected load and the other has a series connected load. We fabricated a 1.9 GHz GaN HEMT Doherty power amplifier with a series connected load using baluns. The amplifier realized high power efficiency with a wide dynamic range in comparison with a conventional push-pull amplifier. In this paper, we propose distortion reduction method for the amplifier and achieved reduction of the third-order intermodulation distortion (IMD3) more than 15 dB at the output power from 5 to 20 dBm. The amplifier realized power-added efficiency (PAE) of 31 % at the output power of 24 dBm at 10 dB input backoff from the saturated output power of 31 dBm with PAE of 58 %.
    International conference proceedings, English
  • Adaptive control of radiation patterns for monopole antenna with frequency-selective reflector with loading varactor
    Yuuya Hoshino; Akira Saitou; Kazuhiko Honjo
    Proceedings of Asia Pacific Microwave Conference 2010, IEEE, TH2D-01, 750-753, Dec. 2010, Peer-reviwed, An adaptive controllable monopole antenna with a frequency-selective reflector has been developed with a miniature planar structure for MIMO applications. Radiation patterns for the developed antenna could be successfully controlled by a loaded GaAs Shottkey-barrier diode varactor fabricated with a MMIC process. By increasing the capacitance value from 0.23[pF] to 0.43[pF], a measured gain at 2.5[GHz] on the E-plane was controlled to decrease by 2 dB for the direction toward the reflector and to increase by 0.5 dB for the opposite direction.
    International conference proceedings, English
  • A novel design of dual-band antennas with orthogonal radiation patterns for MIMO applic ations
    Akira Saitou; Yuuya Hoshino; Yutaka Aoki; Kazuhiko Honjo
    Proceedings of Asia Pacific Microwave Conference 2010, IEEE, WE1E-01, 80-83, Dec. 2010, Peer-reviwed, Differential-mode dual-band antennas with frequency-selective scattering elements are demonstrated for MIMO applications. The input impedance of the small antenna is shown to be approximated with a cascade circuit of the antenna's conductor and the coupling with the free space. With the results, differential-mode dual-band antennas were designed. Satisfactory return losses and omni-directional radiation patterns were obtained in both 2.5 GHz and 5.5 GHz bands. Using the antennas for both a radiator and a frequency-selective scattering element, pattern orthogonality is shown to be improved with both the simulated array factor and the measured radiation patterns. To obtain better orthogonality, frequency-selective scattering elements dedicated for each band in the shape of a line, an arc, and a parabola were estimated. A dual-band antenna with two scattering elements for the 2.5GHz and 5.5GHz bands exhibited excellent orthogonal patterns in both the bands.
    International conference proceedings, English
  • Parasitic Compensation Design Technique for a C-Band GaN HEMT Class-F Amplifier
    Kenta Kuroda; Ryo Ishikawa; Kazuhiko Honjo
    IEEE Transactions on Microwave Theory and Techniques, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 58, 11, 2741-2750, Nov. 2010, Peer-reviwed, A class-F/inverse class-F load circuit design method that includes parasitic elements such as drain-source capacitance and bonding wire inductance has been developed. For the class-F load circuit design, a reactance function which has zeros at even harmonic frequencies and poles at odd harmonic frequencies is expanded to an LC-ladder circuit including parasitic elements through the use of the second Cauer canonical form. For the inverse class-F load circuit design, the zero points and the poles are exchanged. One stage of the LC-ladder circuit can be approximately replaced to a distributed circuit element for higher frequency operation. The proposed method allows parasitic compensation up to an arbitrary harmonic order by adding zeros and poles. Additionally, if distributed circuit elements are used, the method also compensates frequency dispersive characteristics of microstrip lines.
    According to the proposed method, a class-F amplifier using an AlGaN-GaN HEMT has been fabricated at 5.8 GHz. The fabricated class-F amplifier delivered high efficiency characteristics, with a maximum drain efficiency of 79.9%, a maximum power-added efficiency (PAE) of 71.4%, and an output power of up to 33.4 dBm at 5.86 GHz.
    Scientific journal, English
  • Impulse UWB T/R MMIC Modules for Baseband Digital Signals
    Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 2010 European Microwave Conference, IEEE, 1066-1069, Sep. 2010, Peer-reviwed, Impulse UWB transmitter/receiver (T/R) MMIC modules have been developed using InGaP/GaAs HBT MMIC technology. The modules consist of an impulse generator, an impulse detector, amplifiers, and self-complementary antennas, all in a differential mode. In these modules, UWB impulse signals with a frequency spectrum of more than 9GHz are directly generated from input baseband digital signals using the impulse generator. The pulse width of the impulse signal passing through the antennas is enlarged by the impulse detector so that commercially available analogue and digital ICs can be used. Using the modules, a 100 Mbps digital signal transfer has been successfully evaluated.
    International conference proceedings, English
  • Low Noise Group Delay Equalization Technique for UWB InGaP/GaAs HBT LNA
    Kyoung-Pyo Ahn; Ryo Ishikawa; Kazuhiko Honjo
    IEEE Microwave and Wireless Components Letters, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 20, 7, 405-407, Jul. 2010, Peer-reviwed, This letter describes an ultra-wideband (UWB) LNA designed with the aim of achieving both flat group delay variation and a low noise characteristic. Negative group delay (NGD) circuits are good candidates for compensating the group delay variation; however, they have inherent resistances that deteriorate the noise figure (NF). Therefore, an NGD circuit is applied to the latter part of a prototype amplifier. Similarly, a noise matching circuit is applied to the group-delay-equalized amplifier with consideration for its effect on the group delay variation. The LNA with an NGD circuit and a noise matching circuit is fabricated on an InGaP/GaAs MMIC substrate. The fabricated LNA achieved a group delay variation of 11.2 ps, a NF of 1.95-3.54 dB, a maximum gain of 12.3 dB, and a gain variation of 1.1 dB in the UWB band (3.1-10.6 GHz).
    Scientific journal, English
  • Distortion Compensation for Thermal Memory Effect on InGaP/GaAs HBT Amplifier by Inserting RC-Ladder Circuit in Base Bias Circuit
    Ryo Ishikawa; Junichi Kimura; Yukio Takahashi; Kazuhiko Honjo
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E93-C, 7, 958-964, Jul. 2010, Peer-reviwed, An inter-modulation distortion (IMD) compensation method for thermal memory effect using a multistage RC-ladder circuit has been proposed. The IMD caused by the thermal memory effect on an InGaP/GaAs HBT amplifier was compensated for by inserting a multistage RC-ladder circuit in the base bias circuit of the amplifier. Since heat flux owing to self-heating in the transistor can be approximated with a multistage thermal RC-ladder circuit, the canceling of IMD by an additional electrical memory effect generated from the RC-ladder circuit is predicted. The memory effects cause asymmetrical characteristics between upper and lower IMD. The IMD caused by the memory effects is expressed as a vector sum of each origin. By adjusting an electrical reactance characteristic for sub-harmonics affected by the thermal memory effect in the amplifier circuit, the asymmetric characteristic is symmetrized. The parameters of the RC-ladder circuit were estimated so that the adjusted electrical reactance characteristic is reproduced in simulation. A fabricated InGaP/GaAs HBT amplifier with the thermal memory effect compensation circuit exhibited a symmetrized and suppressed IMD characteristics.
    Scientific journal, English
  • Analysis of Millimeter-Wave Amplifier Module with Surface Wave Mode Transmission Line by FDTD Electromagnetic-Semiconductor Device Co-Simulation
    Ryo Ishikawa; Kazuhiko Honjo; Masayuki Nakajima
    Electronics and Communications in Japan, SCRIPTA TECHNICA-JOHN WILEY & SONS, 93, 3, 8-15, Mar. 2010, Peer-reviwed, Direct analysis of a millimeter-wave amplifier module by using FDTD electromagnetic and semiconductor device co-simulation technique is demonstrated. The millimeter-wave amplifier module consists of an HFET and planar dielectric transmission lines (PDTL) for the 60-GHz region. A PDTL with a surface wave transmission mode has a low-loss transmission characteristic in the millimeter-wave region when a low-loss ceramic substrate is used. However, the transmission wave of the PDTL tends to be scattered by irregular structures and impedance mismatching. Furthermore, it is predicted that scattered waves reflected at the edges of the substrate will interfere with incident and transmission waves on the PDTL. Using the co-simulation technique, the influence of the scattering waves is investigated in detail for the amplifier module. (C) 2010 Wiley Periodicals, Inc. Electron Comm Jpn, 93(3): 8-15, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecj.10211
    Scientific journal, English
  • A GaN HEMT Doherty amplifier with a Series Connected Load
    Satoshi Kawai; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 2009 Asia Pacific Microwave Conference, IEEE, TU4F, --328, Dec. 2009, Peer-reviwed, Doherty introduced two types of concepts for high-efficiency amplifiers in 1936. One involved a shunt connected load and the other involved a series connected load. The first one is well known. We propose a microwave Doherty power amplifier with a series connected load using baluns. A 1.9 GHz GaN HEMT Doherty power amplifier was designed and fabricated. At 24 dBm middle and 31 dBm saturated output powers, the amplifier realized improved power efficiencies of 31% and 56%, respectively, compared to power efficiencies of 15% at 24 dBm output power and 57% at 34 dBm saturated power, respectively, obtained with a reference push-pull amplifier.
    International conference proceedings, English
  • A Predistortion Linearizer for a Class-F GaN HEMT Power Amplifier Using Two Independently Controlled Diodes
    Akihiro Ando; Yoichiro Takayama; Tsuyoshi Yoshida; Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 2009 Asia Pacific Microwave Conference, IEEE, TU1F, --272, Dec. 2009, Peer-reviwed, A novel pre-distortion technique using two independently bias-controlled Schottky diodes is proposed to compensate the complicated nonlinear characteristics of the AlGaN/GaN HEMT microwave class-F amplifier, in which inferior intermodulation distortions are often observed for an output power range of large back-off. The newly developed technique has made it possible to achieve both high drain efficiency and low intermodulation distortion simultaneously. The developed linearizer was fabricated in MMIC form and applied to a one watt AlGaN/GaN HEMT class-F amplifier operating at 1.9 GHz, where harmonic frequencies up to the fifth higher order were controlled. With the diode predistortion linearizer, the third-order intermodulation distortion ratio (IMD3) of the 1.9-GHz class-F GaN HEMT power amplifier was improved over power output from 0 to 18 dBm. The IMD3 was under -40 dBc at output powers lower than 10 dBm. The amplifier had a maximum drain efficiency of 70.6 % at output power of 27 dBm.
    International conference proceedings, English
  • Microwave Circuit Design Techniques Interacting Electro-Magnetic Waves, Semiconductor Devices Structures and Thermal Phenomena
    Kazuhiko Honjo; Ryo Ishikawa
    2009 Microwve Workshop Digest, WS13-1, 333-338, Nov. 2009, Invited
    International conference proceedings, English
  • Group Delay Equalization Using Multiple Negative Group Delay Circuits
    Kyoung-Pyo Ahn; Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of Triangle Symposium on Advanced ICT, 119-122, Oct. 2009
    International conference proceedings, English
  • Group Delay Equalized MMIC Amplifier for UWB Based on Right/Left-Handed Transmission Line Design Approach
    Kenji Murase; Ryo Ishikawa; Kazuhiko Honjo
    IET Microwaves, Antennas & Propagation, INST ENGINEERING TECHNOLOGY-IET, 3, 6, 967-973, Sep. 2009, Peer-reviwed, A group delay equalised InGaP/GaAs HBT monolithic microwave integrated circuit (MMIC) amplifier with an active balun for ultra-wideband (UWB) application has been developed. The MMIC consists of a broadband amplifier with an active balun and a group delay equaliser. The group delay equaliser was designed based on a theory using a composite right/left-handed (CRLH) transmission line. Adding a right-handed (RH) transmission line to a CRLH transmission line in parallel, a convex group delay characteristic is realised. Since various UWB components have concave group delay characteristics, the group delay equaliser can compensate a concave group delay characteristic of the amplifier in an operation frequency band. In this paper, dispersion, group delay and impedance characteristics for the proposed CRLH/RH circuit have been theoretically analysed. Moreover, a minimised group delay equaliser circuit on an MMIC has been designed and fabricated based on the proposed CRLH/RH circuit. A fabricated group delay equalised InGaP/GaAs HBT MMIC amplifier with an active balun exhibited an improved group delay characteristic compared with the MMIC amplifier without the group delay equaliser. The standard deviations of group delays for a frequency variation in a gain band were decreased from 12.8 to 5.5 ps at S-21 and decreased from 10.3 to 7.3 ps at S-31.
    Scientific journal, English
  • Synthesis for Negative Group Delay Circuits Using Distributed and Second-Order RC Circuit Configurations
    Kyoung-Pyo Ahn; Ryo Ishikawa; Akira Saitou; Kazuhiko Honjo
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E92-C, 9, 1176-1181, Sep. 2009, Peer-reviwed, This paper describes the characteristic of negative group delay (NGD) circuits for various configurations including first-order, distributed, and second-order RC circuit configurations. This study includes locus, magnitude, and phase characteristics of the NGD circuits. The simplest NGD circuit is available using first-order RC or RL configuration. As an example of distributed circuit configuration, it is verified that losses in a distributed line causes NGD characteristic at higher cut-off band of a coupled four-line bandpass filter. Also, novel wideband NGD circuits using second-order RC configuration, instead of conventional RLC configuration, are proposed. Adding a parallel resistor to a parallel-T filter enables NGD characteristic to it. Also, a Wien-Robinson bridge is modified to have NGD characteristic by controlling the voltage division ratio. They are fabricated on MMIC substrate, and their NGD characteristics are verified with measured results. They have larger insertion loss than multi-stage RLC NGD circuits, however they can realize second-order NGD characteristic without practical implementation of inductors.
    Scientific journal, English
  • Differential Output Impulse Generation InGaP/GaAs HBT MMIC for Impulse UWB System
    Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of European Microwave Integrated Circuit Conference, IEEE, 266-269, Sep. 2009, Peer-reviwed, An impulse generator InGaP/GaAs HBT MMIC with a differential output port has been developed for an impulse Ultra-Wideband (UWB) system. The MMIC directly provides impulse signals to UWB antennas in a differential mode through input digital signals. The impulse generated by the fabricated MMIC had a spectrum peak at 3.5 GHz. By changing the waveform of the input digital signal from a square wave to a short pulse with a width of 3 ns, the spectrum was expanded to a high frequency region by a second peak which appeared at 8.5 GHz. In addition, the detection circuit for the impulse signal was examined based on a peak hold circuit.
    International conference proceedings, English
  • Group Delay Equalized UWB InGaP/GaAs HBT MMIC Amplifier Using Negative Group Delay Circuits
    Kyoung-Pyo Ahn; Ryo Ishikawa; Kazuhiko Honjo
    IEEE Transactions on Microwave Theory and Techniques, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 57, 9, 2139-2147, Sep. 2009, Peer-reviwed, A negative group delay (NGD) circuit has been employed to equalize a group delay variation in a broadband ultrawideband (UWB) InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) amplifier. Using the NGD circuit, a part of a salient group delay characteristic in the operation band of broadband amplifiers can be suppressed without an increase of the entire group delay. The MMIC amplifier has a steep group delay increase in the lower frequency region of the full-band UWB band (3.1-10.6 GHz) due to the sum of phase variations near the cutoff frequencies of the HBTs. The NGD circuit has been inserted to reduce this increase of the group delay in the UWB band. By adding a three-cell NGD circuit while considering input and output matching at the input side of the MMIC amplifier, the group delay variation is decreased by 78%. However, gain was also decreased by insertion of the multistage NGD circuit. In an attempt to avoid this decrease in gain, a one-cell NGD circuit was inserted into the feedback loop of the MMIC amplifier, and as a result, we were able to decrease the group delay variation by 79%, with minimal gain deterioration.
    Scientific journal, English
  • Milestones of Microwave and Millimeter-wave Technologies -Helical Progress in Device and Circuit- (Invited Paper)
    Kazuhiko Honjo
    IEICE Electronic Express, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, 6, 11, 673-688, Jun. 2009, Peer-reviwed, The helical structure of progress in microwave and millimeter-wave technologies, with a focus on active device technology and circuit technology, is overviewed with some examples. The position of, and the possibilities for emerging GaN power devices and Si RF devices are described. In addition, as a new trend for methods in global analysis combining electro-magnetic waves and semiconductor devices, FDTD co-simulation is overviewed with the latest example on a 60 GHz amplifier module. Finally, the circuit technology in which the helical structure strongly dominates is overviewed. As one of endless targets for microwave circuit technology, the latest design technique for high power efficiency microwave circuits is introduced, in which co-simulation of electro-magnetic waves and semiconductor devices are effectively used.
    Scientific journal, English
  • A Novel Compensation Technique for Inter-Mudulation Distortion Related to the Thermal Memory Effect
    Ryo Ishikawa; Junichi Kimura; Kazuhiko Honjo
    Proceedings of 2009 Korea-Japan Microwave Conference, 169-172, Apr. 2009, Peer-reviwed
    International conference proceedings, English
  • Analysis and Compensation of the Group Delay for HBT Using Negative Group Delay Circuits
    Kyoung-Pyo AHN; Ryo ISHIKAWA; Masao SHIMADA; Kazuhiko HONJO
    IEICE Trans. B, The Institute of Electronics, Information and Communication Engineers, J92-B, 01, 11-19, Jan. 2009, Peer-reviwed, 本論文では,UWBなど超広帯域無線システムに用いるモジュールの性能評価尺度として重要な群遅延特性の均一化を図るために,小信号等価回路を用いたヘテロ接合バイポーラトランジスタ(HBT)の群遅延解析を行い,新たに提案する抵抗を用いた負の群遅延(NGD : Negative Group Delay)回路を用いて,これを補償する方法を提案している.ダブルエミッタ,トリプルベース構造など種々の電極配置構造を有するHBTに対する群遅延解析の結果,群遅延特性と電流駆動能力には密接な関係があることが分かった.また,解析,シミュレーション,及び測定結果により,群遅延偏差は周波数が上がるほど減少する傾向を示す特徴があることが確認された.この特徴に着目すると,UWBの全帯域(3.1〜10.6GHz)での偏差の大部分を減少できる可能性がある.この目的に適した方法の一つは,抵抗とキャパシタの直列回路にインダクタを並列に接続したNGD回路を用いた補償である.この回路は既存のNGDより損失が増すが,広帯域で反射損が改善できる新たなNGD補償回路である.このNGD補償回路をHBTの入力側に,そして直列共振形のNGD補償回路を出力側に付加した場合,UWBの全帯域(3.1〜10.6GHz)内において,6.4dBの利得犠牲の下に,83%の群遅延抑制効果が確認された.なお,このNGD回路は,群遅延補償に加え,反射損の改善にも効果がある.
    Scientific journal, Japanese
  • Fundamentals and Design Technology for High-Efficiency and Low-Distortion Microwave Power Amplifiers
    Yoichiro Takayama; Kazuhiko Honjo
    IEICE Trans. C, The Institute of Electronics, Information and Communication Engineers, J91-C, 12, 677-689, Dec. 2008, Peer-reviwed, Invited, マイクロ波電力増幅器はワイヤレス機器の通信品質,電力消費,小型化などに重要な影響を及ぼすキーデバイスである.トランジスタ電力増幅器の電力効率,ひずみ特性などの高性能化け,トランジスタ自身の高性能化,トランジスタの電流電圧波形を制御する回路動作モード及びこれらのトランジスタ回路の組合せ構成技術により追及されてきた.本論文では,基本的なマイクロ波電力増幅器であるA〜C組動作,代表的な高効率マイクロ波電力増幅器であるF級及び逆F組,組合せ型としてプッシュプル形及び最近注目を集めているドハティ増幅器について,高効率化・低ひずみ化のための基本動作原理,特徴及びその回路設計技術を解説する.
    Scientific journal, Japanese
  • Inverse Class-F AlGaN/GaN HEMT Microwave Amplifier Based on Lumped Element Circuit Synthesis Method
    Yasuyuki Abe; Ryo Ishikawa; Kazuhiko Honjo
    IEEE Transactions on Microwave Theory and Techniques, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 56, 12, 2748-2753, Dec. 2008, Peer-reviwed, A lumped element design method considering more than third-order higher harmonic frequencies for a microwave AlGaN/GaN HEMT inverse class-F amplifier has been developed. The load circuit consists of a series reactance network having zero impedance at the odd order harmonic frequencies and poles at the even order higher harmonic frequencies as well as a shunt reactance network having zero impedance at the odd order harmonic frequencies. A fabricated AlGaN/GaN HEMT inverse class-F amplifier delivered a power-added efficiency of 76.3% and a drain efficiency of 78.3% at 879 MHz.
    Scientific journal, English
  • A High-Efficiency Class-F GaN HEMT Power Amplifier with a Diode Predistortion Linearizer
    Akihiro Ando; Yoichiro Takayama; Tsuyoshi Yoshida; Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 2008 Asia Pacific Microwave Conference, IEEE, A4, 30, --818, Dec. 2008, Peer-reviwed
    International conference proceedings, English
  • Microwave Wideband Characteristics of Perpendicular Dipole Antennas with Phase Shift Lines
    Kazuhiro Aoki; Akira Saitou; Kazuhiko Honjo
    Proceedings of 2008 Asia Pacific Microwave Conference, IEEE, G3, 05, --2719, Dec. 2008, Peer-reviwed
    International conference proceedings, English
  • InGaP/GaAs HBT MMIC Amplifier with Low Power Consumption and Low Noise Characteristics for Full-Band UWB Receiver Systems
    Ryo Ishikawa; Takuya Abe; Kazuhiko Honjo; Masao Shimada
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E91-C, 11, 1828-1831, Nov. 2008, Peer-reviwed, A wideband InGaP/GaAs HBT MMIC amplifier with a low noise characteristic has been developed as a full-band UWB receiver. The amplifier was designed by applying a scaling law to a driver amplifier in order to decrease power consumption, including a modification for decreasing a noise figure. A triple base structure for a double-emitter HBT was employed to decrease a base resistance and to decrease a noise figure of the amplifier. A fabricated amplifier provided a 3-dB gain roll-off bandwidth from 1.1 GHz to 10.6 GHz with a 14.1 dB peak power gain. The amplifier exhibited a low power consumption of 15.9 mW and a low noise figure of less than 3.7 dB in the full-band of the UWB.
    Scientific journal, English
  • High-Efficiency GaN-HEMT Class-F Amplifier Operating at 5.7 GHz
    Kenta Kuroda; Ryo Ishikawa; Kazuhiko Honjo
    Proceedings of 38th European Microwave Conference (EuMC2008), IEEE, EuMC23-4, 440-443, Oct. 2008, Peer-reviwed, We report on the design, fabrication, and measurement results of a high-efficiency class-F amplifier using an AlGaN/GaN HEMT at 5.7 GHz. Because of their higher operating voltage, GaN devices are expected to have higher operating efficiency as compared to GaAs devices. The fabricated amplifier using a low-loss resin microstrip substrate validated high efficiency expectations with a maximum drain efficiency of 77.1%, maximum power added efficiency of 68.7%, and output power of up to 34.5 dBm at 5.69 GHz.
    International conference proceedings, English
  • A Novel Inductance Evaluation Method for Clip-Type Inductors and Meander Inductors Under the Impedance Matched Condition
    Shoichi Shimizu; Yutaka Aoki; Kazuhiko Honjo
    International Conference on Solid State Devices and Materials, P-5-10, -, Sep. 2008, Peer-reviwed
    International conference proceedings, English
  • Miniaturized Ultra-Wideband Self-Complementary Antennas Using Shunted Spiral Inductors
    Akira Saitou; Yuji Ohhashi; Kazuhiko Honjo; Kouji Takahashi
    2008 International Microwave Symposium Digest, IEEE, 1211-1214, Jun. 2008, Peer-reviwed, Miniaturized self-complementary wideband antennas using shunted spiral inductors are demonstrated. With Chu's equivalent circuit, a shunt inductor is shown analytically to reduce the lower band-edge frequency. With practical shunt inductors consisting of lines and spiral inductors, line-length effect on bandwidth is clarified by simulation and measurement. With the optimized spiral inductors, miniaturized 50 Omega impedance-matched self-complementary antennas were designed and fabricated on a low permittivity ( epsilon(r) : 4.6) and low cost FR-4 substrate. Measured return loss less than -8.7 dB between 3.9 GHz and 11.2 GHz was obtained with the antenna of which radius is 10mm. Measured radiation patterns were omni-directional between 3 GHz and 9 GHz.
    International conference proceedings, English
  • Analysis of Millimeterwave Amplifier Module with Surface Wave Mode Transmission Line by FDTD Electromagnetic-Semiconductor Device Co-Simulation
    Ryo Ishikawa; Kazuhiko Honjo; Masayuki Nakajima
    IEEJ Transactions on Electronics, Information and Systems, Institute of Electrical Engineers of Japan, 128-C, 6, 865‐871-871, Jun. 2008, Peer-reviwed, Direct analysis for a millimeterwave amplifier module has been demonstrated by using FDTD electromagnetic and semiconductor device co-simulation technique. The millimeterwave amplifier module consists of an HFET and planar dielectric transmission lines (PDTL) at 60-GHz region. The PDTL with a surface wave transmission mode has a low-loss transmission characteristic at millimeterwave region using a low-loss ceramic substrate. However, the transmission wave on the PDTL tends to be scattered by irregular structures and impedance mismatching. Furthermore, it is predicted that reflected scattered waves at edges of the substrate interfere with incident and transmission waves on the PDTL. Using the co-simulation technique influence of the scattering waves was investigated in detail for the amplifier module. © 2008 The Institute of Electrical Engineers of Japan.
    Scientific journal, Japanese
  • Direct Analysis Technique for Long-Finger HBT by Electromagnetic and Device Co-Simulation
    Yasuta Shinohara; Ryo Ishikawa; Kazuhiko Honjo
    IEEE Transactions on Microwave Theory and Techniques, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 56, 4, 747-754, Apr. 2008, Peer-reviwed, This paper presents a direct-analysis technique for transistors with a long-finger structure. The analysis technique is an incorporated simulation between the finite-difference time-domain electromagnetic (EM) and semiconductor device simulations. The co-simulation method can consider various EM couplings and phase shifts on finger electrodes of transistors. The method was applied for InGaP/GaAs HBTs with various finger lengths to investigate gain degradation characteristics as a function of the finger length. As the first step, circuit simulations were done instead of a semiconductor device simulation using SPICE models of the HBT. Both large- and small-signal equivalent-circuit parameters were extracted by measurements to estimate nonlinear and linear characteristics, respectively. Using the extracted small-signal parameters, the gain degradation was estimated. The co-simulation results showed the same tendency as measurement results. Additionally, it was numerically shown that a resistive loss was mainly affected for the gain degradation from a comparison between gold and lossless electrodes.
    Scientific journal, English
  • Self-Complementary Array Antenna for UWB Applications
    Kenji Hiruta; Akira Saitou; Kazuhiko Honjo
    Proceedings of the 3rd International Laser, Light-Wave and Microwave Conference (ILLMC2008), IEEE, 24-TP4-1-473, Apr. 2008, Peer-reviwed
    International conference proceedings, English
  • A Global Design Technique Including the Interactions between Electromagnetic Waves and Semiconductor Devices in Advanced Microwave Circuits (Invited Paper)
    Kazuhiko Honjo; Ryo Ishikawa
    Proceedings of the 3rd International Laser, Light-Wave and Microwave Conference (ILLMC2008), 24-IT-5, Apr. 2008, Peer-reviwed, Invited
    International conference proceedings, English
  • Design Considerations on the Minimum Size of Broadband Antennas for UWB Applications
    Akira Saitou; Kazuhiro Aoki; Kazuhiko Honjo; Koichi Watanabe
    IEEE Transactions on Microwave Theory and Techniques, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 56, 01, pp. 15-21, Jan. 2008, Peer-reviwed, The practical realization of Chu's minimum-sized antenna is investigated using self-complementary antennas. Rigorous bandwidth formulas for broadband antennas are derived for broadband antennas based on Chu's fundamental mode equivalent circuit. By comparing input impedances and radiation patterns, the fabricated self-complementary antenna used for Japan's ultra-wideband higher band (7.25-10.25 GHz) is found approximated by the minimum-sized antenna. Using the rigorous bandwidth formulas above, the fabricated antenna is shown to be smaller than the minimum-sized antenna. This breakthrough is achieved by using a more complicated matching circuit for broadband antennas instead of the single-stage inductor used in bandwidth estimation with the Q factor.
    Scientific journal, English
  • Compact Accurate Scalable Model for Millimeter wave InP CPW with Under-Bridge
    Gang Liu; Hiroshi Nakano; Kazuhiko Honjo
    IEICE Electronic Express, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, 5, 2, pp. 74-80, Jan. 2008, Peer-reviwed, A compact accurate scalable model for CPW on InP with a single under-bridge is successfully established and testified by both measurements and EM simulations up to 50 GHz. Then it helps realize a novel matching network design consisting of only two under-bridges beneath CPW, with the functions of both even mode impedance matching and odd mode suppression.
    Scientific journal, English
  • Global Analysis for a Surface Wave Mode HFET Amplifier Module at 60 GHz by EM-Device Co-Simulation
    Ryo Ishikawa; Kazuhiko Honjo; Masayuki Nakajima
    EuMIC Proceedings, 180-183, Oct. 2007, Peer-reviwed, A global analysis for a millimeter-wave amplifier module with surface wave mode transmission lines has been demonstrated. The analysis method is a co-simulation between an FDTD-based electromagnetic simulator and a semiconductor device simulator. Using this method, it is possible to consider various electromagnetic coupling between transmission lines and active devices with nonlinear characteristics. Furthermore, a semiconductor device simulation is more accurate than an approximation to a large-signal equivalent circuit. The incorporated simulation was demonstrated for a millimeter-wave amplifier module which consists of an HFET and planar dielectric transmission lines (PDTL) at 60-GHz region. The PDTL with a surface wave transmission mode has a low-loss transmission characteristic at millimeter-wave region using a low-loss ceramic substrate. However, the transmission wave on the PDTL tends to be scattered by discontinuity structures and impedance mismatching. Furthermore, it is predicted that reflected scattered waves at edges of the substrate interfere the PDTL and transistors mounted on the PDTL. Using the co-simulation technique, influence of the scattering waves was investigated in detail for the amplifier module. © 2007 EuMA.
    International conference proceedings, English
  • Novel Symmetric High Q Inductors Fabricated Using Wafer-Level CSP Technology
    Yutaka Aoki; Shoichi Shimizu; Kazuhiko Honjo
    EuMIC Proceedings, IEEE, 339-342, Oct. 2007, Peer-reviwed, Wafer level chip-size package (WLP) technology enables fabrications of low-loss high-Q inductors, which suffer from unfavorable two-port asymmetric characteristics. To overcome this problem, a novel clip-type inductor has been proposed, where the electrode crossover points in multi-turn inductor structures is modified from a conventional mirror symmetric point to a novel electrical symmetric point. The novel clip inductors were designed and fabricated using WPL technology. By means of a developed 4-nH novel clip inductor, the Q-factor value difference between the two ports can be significantly reduced to 1.4% from 14.8% at 1.4 GHz. Q-factors of developed inductors have also been evaluated under both a conventional short-circuited load condition and an impedance matched condition.
    International conference proceedings, English
  • Accurate Distortion Prediction for Thermal Memory Effect in Power Amplifier Using Multi-Stage Thermal RC-Ladder Network
    Yukio Takahashi; Ryo Ishikawa; Kazuhiko Honjo
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E90-C, 9, pp. 1658-1663, Sep. 2007, Peer-reviwed, Distortion characteristics caused by the thermal memory effect in power amplifiers were accurately predicted using a multi-stage thermal RC-ladder network derived by simplifying the heat diffusion equation. Assuming a steep gradient of heat diffusion near an intrinsic transistor region in a semiconductor substrate, the steady state temperature, as well as the transient thermal response at the transistor region, was estimated. The thermal resistances and thermal capacitances were adjusted to fit a temperature distribution characteristic and a step response characteristic of temperature in the substrate. These thermal characteristics were calculated by thermal FDTD simulation. For an InGaP/GaAs HBT, a step response characteristic for a square-wave voltage signal input was simulated using a large-signal model of the HBT connecting the multi-stage thermal RC-ladder network. The result was verified experimentally. Additionally, for an RF-amplifier using the HBT, the 3rd-order intermodulation distortion caused by the thermal memory effect was simulated and this result was also verified experimentally. From these verifications, a multi-stage thermal RC-ladder network can be used to accurately design super linear microwave power amplifiers and linearizers.
    Scientific journal, English
  • Class-F Microwave Amplifier Desig Using GaAs-HBT and GaN-HEMT (Invited)
    Kazuhiko Honjo; Ryo Ishikawa; Tsuyoshi Yoshida; Cong Zheng
    International Conference on Solid State Devices and Materials, 298-299, Sep. 2007, Peer-reviwed, Invited
    International conference proceedings, English
  • Finger Length Optimization for AlGaN/GaN HEMT and InGaP/GaAs HBT by Using FDTD Electromagnetic and Device Co-Simulation Technique
    Akira Chokki; Yasuta Shinohara; Ryo Ishikawa; Kazuhiko Honjo
    International Conference on Solid State Devices and Materials, 2007, 154-155, Sep. 2007, Peer-reviwed
    International conference proceedings, English
  • Low Power Consumption and Low Noise InGaP/GaAs HBT MMIC Amplifier for Full-Band UWB Receiver
    Ryo Ishikawa; Tatsuya Abe; Masao Shimada; Kazuhiko Honjo
    International Conference on Solid State Devices and Materials, 2007, 302-303, Sep. 2007, Peer-reviwed
    International conference proceedings, English
  • A Novel Impedance Matching Network in Millimeterwave InP CPW Circuit
    Gang Liu; Hiroshi Nakano; Kazuhiko Honjo
    Proceedings of ICBN/ICT Triangle Forum 2007, -, Sep. 2007, Peer-reviwed
    International conference proceedings, English
  • Ultra-Wideband, Differential-Mode Bandpass Filters with Four Coupled Lines Embedded in Self-complementary Antennas
    Akira Saitou; Kyoung-Pyo Ahn; Hajime Aoki; Kazuhiko Honjo; Koichi Watanabe
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E90-C, 7, pp. 1524-1532, Jul. 2007, Peer-reviwed, A design method for an ultra-wideband bandpass filter (BPF) with four coupled lines has been developed. For demonstration purposes, 50 Omega-matched self-complementary antennas integrated with the ultra-wideband, differential-mode BPF with four coupled lines, a notch filter, and a low-pass filter (LPF) were prepared and tested. An optimized structure for a single-stage, broadside-coupled and edge-coupled four-lines BPF was shown to exhibit up to 170% fractional bandwidth and an impedance transformation ratio of 1.2 with little bandwidth reduction, both analytically and experimentally. Using the optimized structure, 6-stage BPFs were designed to transform the self-complementary antenna's constant input impedance (60 pi epsilon(-1/2)(e)(Omega)) to 50 Omega without degrading bandwidth. In addition, two types of filter variations - a LPF-embedded BPF and a notch filter-embedded BPF - were designed and fabricated. The measured insertion loss of both filter systems was less than 2.6 dB over the ultra-wideband (UWB) band from 3.1 GHz to 10.6 GHz. The filter systems were embedded in the wideband self-complementary antennas to reject unnecessary radiation over the next pass band and 5-GHz wireless LAN band.
    Scientific journal, English
  • Miniaturized Ultra-Wideband Self-Complementary Antennas Using High Permittivity Thick Resin Material
    Akira Saitou; Kazuhiro Aoki; Kazuhiko Honjo; Chunhu Quan; Koichi Watanabe
    2007 International Microwave Symposium Digest, IEEE, 1007-1010, Jun. 2007, Peer-reviwed, A miniaturized self-complementary antenna for Japanese UWB higher band (7.25GHz-10.25GHz) is demonstrated. Input impedances of four antennas in the size of 30mm, 20mm, 15mm, 10mm each on 1mm and 2mm thick high permittivity (epsilon(r) = 10.2) resin substrates were measured and extracted. With the extracted input impedance, 50 0 matched self-complementary antennas in the size of 10mm were designed and fabricated. The measured return loss was less than -10dB between 5.9GHz and 13.8GHz and the fractional bandwidth was 80%. The fabricated antenna size is almost equivalent with the broadband antenna's minimum size Chu showed ([1]). Measured radiation patterns were almost omni-directional between 6GHz and 12GHz.
    International conference proceedings, English
  • Design Consideration of Traveling Wave Single-Pole Multi-Throw MMIC Switch Using Fully Distributed FET
    Hiroshi Mizutani; Naotaka Iwata; Yoichiro Takayama; Kazuhiko Honjo
    IEEE Transaction on Microwave Theory and Techniques, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 55, 04, pp. 664-671, Apr. 2007, Peer-reviwed, The circuit design considerations for the traveling-wave switch (TWSW) single-pole double-throw (SPDT) monolithic microwave integrated circuit (MMIC) utilizing a fully distributed FET (FD-FET) are presented here for the first time. The normalized length of the impedance transformer for a single-pole multithrow TWSW using the FD-FET is found to be less than a quarter-wavelength at the operating frequency. Unlike the TWSW using lumped FETs, the TWSW with the FD-FET offers the advantage of no design limits regarding such frequency characteristics as bandwidth and group delay. The newly developed SPDT TWSW MMIC using the 400-mu m-gate finger FD-FET delivers broadband characteristics over more than an octave frequency range with highly reliable MMIC technology. The newly developed SPDT MMIC switch provides low insertion loss of less than 2.1 dB and high isolation of over 25.5 dB from 38 to 80 GHz, coupled with the benefit of very small size.
    Scientific journal, English
  • An Expression of High-Frequency Characteristics on a High-Density Multilayer Wiring Board Using an LC Ladder Network as a Unit Segment
    Ryo Ishikawa; Norio Imai; Kazuhiko Honjo
    Electronics and Communications in Japan, Part 2, SCRIPTA TECHNICA-JOHN WILEY & SONS, 90, 4, pp. 18-25, Apr. 2007, Peer-reviwed, This paper presents a method of expressing a high-speed signal transmission line connecting the LSIs in a high-density multilayer wiring board in terms of cascaded connections of LC ladder networks. For signal transmission with a fundamental frequency beyond 1 GHz, the signal transmission lines in a multilayer board are treated as distributed transmission lines. However, there exist many scattering elements such as vias for interlayer connection in the multilayer board that disturb the transmission characteristic. Transmission characteristics affected by these elements are analyzed by electromagnetic field simulation in general. However, the simulation requires a lot of simulation time and computer resources. In order to simplify the simulation, the signal line structures in the board are constructed with combinations of several segments. Moreover, each unit segment is expressed in terms of an LC ladder network so that an analysis based on the lumped elements can be carried out within a short time. This paper describes a technique for deriving the L and C values of the ladder equivalent circuits for various unit segments such as passive components and transmission lines. By comparison with the electromagnetic field analysis and measurement, the usefulness of the method is demonstrated. (C) 2007 Wiley Periodicals, Inc.
    Scientific journal, English
  • Novel symmetric high Q inductors fabricated using wafer-level CSP technology
    Yutaka Aoki; Shoichi Shimizu; Kazuhiko Honjo
    2007 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, VOLS 1 AND 2, IEEE, 504-+, 2007, Peer-reviwed, Wafer level chip-size package (WLP) technology enables fabrications of low-loss high-Q inductors, which suffer from unfavorable two-port asymmetric characteristics. To overcome this problem, a novel clip-type inductor has been proposed, where the electrode crossover points in multi-turn inductor structures is modified from a conventional mirror symmetric point to a novel electrical symmetric point. The novel clip inductors were designed and fabricated using WPL technology. By means of a developed 4-nH novel clip inductor, the Q-factor value difference between the two ports can be significantly reduced to 1.4% from 14.8% at 1.4 GHz. Q-factors of developed inductors have also been evaluated under both a conventional short-circuited load condition and an impedance matched condition.
    International conference proceedings, English
  • Global analysis for a surface wave mode BFET amplifier module at 60 GHz by EM-device co-simulation
    Ryo Ishikawa; Kazuhiko Honjo; Masayuki Nakajima
    2007 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, VOLS 1 AND 2, IEEE, 559-+, 2007, Peer-reviwed, A global analysis for a millimeter-wave amplifier module with surface wave mode transmission lines has been demonstrated. The analysis method is a co-simulation between an FDTD-based electromagnetic simulator and a semiconductor device simulator. Using this method, it is possible to consider various electromagnetic coupling between transmission lines and active devices with nonlinear characteristics. Furthermore, a semiconductor device simulation is more accurate than an approximation to a large-signal equivalent circuit. The incorporated simulation was demonstrated for a millimeter-wave amplifier module which consists of an HFET and planar dielectric transmission lines (PDTL) at 60-GHz region. The PDTL with a surface wave transmission mode has a low-loss transmission characteristic at millimeter-wave region using a low-loss ceramic substrate. However, the transmission wave on the PDTL tends to be scattered by discontinuity structures and impedance mismatching. Furthermore, it is predicted that reflected scattered waves at edges of the substrate interfere the PDTL and transistors mounted on the PDTL. Using the co-simulation technique, influence of the scattering waves was investigated in detail for the amplifier module.
    International conference proceedings, English
  • InGaP/GaAs HBT MMIC Amplifier with Active Balun for Ultra-Wideband Self-Complementary Antenna
    Itaru Nakagawa; Ryo Ishikawa; Kazuhiko Honjo; Masao Shimada
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E89-C, 12, pp. 1814-1820, Dec. 2006, Peer-reviwed, An InGaP/GaAs HBT MMIC amplifier with an active balun has been developed for ultra-wideband radio systems (UWB). The MMIC was designed to drive a self-complementary antenna with a balanced mode, where an input impedance is 60 pi ohms. The MMIC consists of a common mode negative feed back ultra-wideband amplifier circuit, an active balun circuit, and a high impedance drive circuit. The developed amplifier provides a 3-dB gain roll-off bandwidth from 2.4 GHz to 10.8 GHz with a 14.1-dB linear power gain, and a linear power output up to 3 dBm. The developed amplifier with the active balun provides a 3-dB gain roll-off bandwidth from 2.3 GHz to 8.6 GHz with a 21.3-dB power gain in a balanced mode, and a linear power output up to 0.6 dBm. The measured total group delay is less than 32 psec. Output signals at the balanced output terminals of the MMIC were kept inverted with a steep pulse shape for an impulse input signal of 57-psec pulse width.
    Scientific journal, English
  • 38-80 GHz SPDT Traveling Wave Switch MMIC Utilizing Fully Distributed FET
    Hiroshi Mizutani; Naotaka Iwata; Yoichiro Takayama; Kazuhiko Honjo
    2006 Asia Pacific Microwave Conference Proceedings, 1, WE1A-1, pp. 3-6, Dec. 2006, Peer-reviwed, This is the first report of the traveling wave SPDT switch using the fully distributed FET (FD-FET). The broadband characteristics were successfully obtained over more than an octave frequency range from Ka to W bands for the millimeter-wave applications. From 38 to 80 GHz, the low insertion loss of less than 2.1 dB, and the high isolation of better than 25.5 dB, were achieved by using the AlGaAs/InGaAs hetero-junction FET traveling wave switch (TWSW) technology. In the design, the difference between the quasi- and the fully distributed switch circuit has been investigated. Copyright 2006 IEICE.
    International conference proceedings, English
  • Long-Finger HBT Analysis Based on Device and EM Co-Simulation Using FDTD Method
    Yasuta Shinohara; Ryo Ishikawa; Kazuhiko Honjo
    2006 Asia Pacific Microwave Conference Proceedings, 1, WE4B-4, pp. 291-294, Dec. 2006, Peer-reviwed, This paper presents an integrated analysis of a FDTD electromagnetic field simulation and a device simulation applying for HBT's having long-finger structure. The SPICE model extracting device parameter was used instead of physical model. As a result, the FDTD simulation results were the same tendency to measurement results. Additionally the comparison of gold line with lossless line as finger was shown. Copyright 2006 IEICE.
    International conference proceedings, English
  • Precise Modeling of Thermal Memory Effect for Power Amplifier Using Multi-Stage Thermal RC-Ladder Network
    Yukio Takahashi; Ryo Ishikawa; Kazuhiko Honjo
    2006 Asia Pacific Microwave Conference Proceedings, 1, WE4B-3, pp. 287-290, Dec. 2006, Peer-reviwed, A precise modeling method for thermal memory effect has been proposed. The proposed method consists of a multi-stage thermal RC-ladder network, which has been replaced from heat diffusion equation. Different from conventional method, the proposed method is valid for both steady state solutions and transient solutions. As examples, output voltage transient phenomena and 3rd order inter modulation distortion characteristics for InGaP/GaAs HBT amplifiers were simulated and measured. Experimental results support the validity of the proposed method. The model can be used for accurate design for supper linear microwave power amplifiers and linearizers. Copyright 2006 IEICE.
    International conference proceedings, English
  • Group Delay Compensation Technique for UWB MMIC Using Composite Right/Left-Handed Circuit
    Kenji Murase; Ryo Ishikawa; Kazuhiko Honjo
    2006 Asia Pacific Microwave Conference Proceedings, Institute of Electrical and Electronics Engineers Inc., 3, FR1A-2, pp. 1409-1412, Dec. 2006, Peer-reviwed, A group delay equalizer consisting of a composite right/left handed (CRLH) circuit in parallel with a right handed (RH) circuit is proposed for UWB RF components. Dispersion characteristics and group delay characteristics for the proposed circuit are described. A group delay compensation circuit was designed for the developed InGaP/GaAs HBT MMIC amplifier with an active balun. It is demonstrated that the measured standard deviations of group delay can be reduced from 16.5 psec in S21 and 12.4 psec in S31 to 4.4 psec in S21 and 7.7 psec in S31, respectively, in a circuit simulation. Copyright 2006 IEICE.
    International conference proceedings, English
  • Group Delay Analysis of Differential-Mode Coupled Four Lines Bandpass Filters
    Kyoung-Pyo Ahn; Akira Saitou; Kazuhiko Honjo
    2006 Asia Pacific Microwave Conference Proceedings, 2, THOF-29, pp. 1260-1263, Dec. 2006, Peer-reviwed, In this paper, the analytic formula of the group delay of one-stage coupled four lines BPF is proposed. The analytic formula agrees well with measured group delay of one-stage BPF, except for at band-edges. In case of multi-stage BPF, the sum of analyzed group delay of each stage is quite agrees with measured result in UWB band(3.1 GHz-10.6 GHz). A 6-stage BPF with impedance transformation from 50 Ω to 172 Ω, the input impedance of the self-complementary antenna, is shown as an example. Copyright 2006 IEICE.
    International conference proceedings, English
  • High-Speed and High-Density Semiconductor Package Modeling Using Optimized Segment Extraction Method
    Daisuke Ohshima; Hirobumi Inoue; Mitsuru Furuya; Jun Sakai; Ryo Ishikawa; Kazuhiko Honjo
    IEICE Trans. C, The Institute of Electronics, Information and Communication Engineers, J89-C, 11, pp. 826-832, Nov. 2006, Peer-reviwed, 本論文では電子機器の高周波性能を実現するために,チップ・パッケージ・ボードなどの実装構造中の電気信号経路を統合的に解析し,不連続部を抽出することで,効率的かつ高精度な分割解析モデルを生成する最適要素抽出法(Optimized Segment Extraction Method, OSE法)を提案する.本提案方法ではBGA (Ball Grid Array)実装構造を(i)チップとパッケージの接続部を含む要素,(ii)パッケージ内伝送路を含む要素,(iii)パッケージとボードとの接続部を含む要素に分割することで従来の分割境界の選び方に比べ解析精度が向上できる.また,構造の一部を等価回路に置き換えた場合についても検討した.(iii)を電磁界モデル,伝送路構造である(i),(ii)を次数の小さな等価回路モデルで表現した本提案モデルと,全体を一つの電磁界モデルとしたリファレンスモデルで高周波精度と解析時間を比較し,高周波精度向上と計算機資源節約の両立が実現できることを示す.
    Scientific journal, Japanese
  • RF HBT oscillators with low-phase noise and high-power performance utilizing (λ/4 ± δ) open-stubs resonator
    Ken'ichi Hosoya; Shin'ichi Tanaka; Yasushi Amamiya; Takaki Niwa; Hidenori Shimawaki; Kazuhiko Honjo
    IEEE Transactions on Circuits and Systems I: Regular Papers, 53, 8, 1670-1682, Aug. 2006, Peer-reviwed, This paper presents a new type of transmission-line resonator and its application to RF (microwave and millimeterwave) heterojunction bipolar transistor (HBT) oscillators. The resonator is a parallel combination of two open stubs having length of λ/4 ± δ(δ ≪ λ), where λ is a wavelength at a resonant frequency. The most important feature of this resonator is that the coupling coefficient (βC) can be controlled by changing δ while maintaining unloaded Q-factor (Qu) constant. Choosing a small value of δ allows us to reduce βC or equivalently to increase loaded Q-factor (QL). Since coupling elements such as capacitors or electromagnetic gaps are not needed, βC and QL can be precisely controlled based on mature lithography technology. This feature of the resonator proves useful in reducing phase noise and also in enhancing output power of microwave oscillators. The proposed resonator is applied to 18-GHz and 38-GHz HBT oscillators, leading to the phase noise of -96-dBc/Hz at 100-kHz offset with 10.3-dBm output power (18-GHz oscillator) and - 104-dBc/Hz at 1-MHz offset with 11.9 dBm (38-GHz oscillator). These performances are comparable to or better than state-of-the-art values for GaAs- or InP-based planar-circuit fundamental-frequency oscillators at the same frequency bands. © 2006 IEEE.
    Scientific journal, English
  • Expression of High-Frequency Characteristics on High- Density Multi-Layer Wiring Board Using a LC Ladder Network as an Unit Segment
    Ryo Ishikawa; Norio Imai; Kazuhiko Honjo
    IEICE Trans. C, SCRIPTA TECHNICA-JOHN WILEY & SONS, J89-C, 8, pp. 538-544, Aug. 2006, Peer-reviwed, This paper presents a method of expressing a high-speed signal transmission line connecting the LSIs in a high-density multilayer wiring board in terms of cascaded connections of LC ladder networks. For signal transmission with a fundamental frequency beyond 1 GHz, the signal transmission lines in a multilayer board are treated as distributed transmission lines. However, there exist many scattering elements such as vias for interlayer connection in the multilayer board that disturb the transmission characteristic. Transmission characteristics affected by these elements are analyzed by electromagnetic field simulation in general. However, the simulation requires a lot of simulation time and computer resources. In order to simplify the simulation, the signal line structures in the board are constructed with combinations of several segments. Moreover, each unit segment is expressed in terms of an LC ladder network so that an analysis based on the lumped elements can be carried out within a short time. This paper describes a technique for deriving the L and C values of the ladder equivalent circuits for various unit segments such as passive components and transmission lines. By comparison with the electromagnetic field analysis and measurement, the usefulness of the method is demonstrated. (C) 2007 Wiley Periodicals, Inc.
    Scientific journal, Japanese
  • RF HBT Oscillators with Low-Phase-Noise and High-Power Performance Utilizing a (λ/4±δ) Open-Stub Resonator
    K.Hosoya; S.Tanaka; Y.Amamiya; T.Niwa; H.Shimawaki; K.Honjo
    IEEE Transactions on Circuits and Systems, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 53, 8, pp. 1670-1682, Aug. 2006, Peer-reviwed, This paper presents a new type of transmission-line resonator and its application to RF (microwave and millimeterwave) heterojunction bipolar transistor (HBT) oscillators. The resonator is a parallel combination of two open stubs having length of lambda/4 +/-delta (delta << lambda), where lambda is a wavelength at a resonant frequency. The most important feature of this resonator is that the coupling coefficient (beta(C)) can be controlled by changing delta while maintaining unloaded Q-factor (Q(u)) constant. Choosing a small value of delta allows us to reduce beta(C) or equivalently to increase loaded Q-factor (Q(L)). Since coupling elements such as capacitors or electromagnetic gaps are not needed, beta(C) and Q(L) can be precisely controlled based on mature lithography technology. This feature of the resonator proves useful in reducing phase noise and also in enhancing output power of microwave oscillators. The proposed resonator is applied to 18-GHz and 38-GHz HBT oscillators, leading to the phase noise of -96-dBc/Hz at 100-kHz offset with 10.3-dBm output power (18-GHz oscillator) and -104-dBc/Hz at 1-MHz offset with 11.9 dBm (38-GHz oscillator). These performances are comparable to or better than state-of-the-art values for GaAs- or InP-based planar-circuit fundamental-frequency oscillators at the same frequency bands.
    Scientific journal, English
  • Vertically Asymmetric Differential-Mode 4 Line BPF Using a Multi-Layer Substrate and Its Group Delay Analysis
    Kyoung-Pyo Ahn; Akira Saitou; Kazuhiko Honjo
    2006 International Sympsium on Advanced ICT, 2B-1, 139-144, Aug. 2006, Peer-reviwed
    International conference proceedings, English
  • Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering Up to 7th Order Higher Harmonic Frequencies
    Masato Seki; Ryo Ishikawa; Kazuhiko Honjo
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E89-C, 7, pp. 937-942, Jul. 2006, Peer-reviwed, The first realization of a class-F InGaP/GaAs HBT amplifier considering up to 7th-order higher harmonic frequencies, operating at 1.9-GHz band, is described. A total number of open-circuited stubs for higher harmonic frequency treatment is successfully reduced without changing a class-F load circuit condition, using a low-cost and low-loss resin (tan delta = 0.0023) circuit board. In class-F amplifier design at microwave frequency ranges, not only increasing treated orders of higher harmonic frequencies for a class-F load circuit, but also decreasing parasitic capacitances of a transistor is important. Influence of a base-collector capacitance, C-bc, for power added efficiency, PAE, and collector efficiency, eta(c), was investigated by using a two-dimensional device simulator and a harmonic balance simulator. Measured maximum PAE and eta(c) reached 74.2% and 76.6%, respectively, using a fabricated class-F InGaP/GaAs HBT amplifier with collector doping density of 2 x 10(16) cm(-3). In case circuit losses were de-embedded for the experimental results, PAE and eta(c) were estimated as 78.7% and 81.2%, respectively. These are very close to obtainable maximum PAE for the use of the InGaP/GaAs HBT.
    Scientific journal, English
  • Experimental Verification of Lumped Element Circuit Synthesis Method for Class-F Microwave Amplifier Using InGaP/GaAs HBT
    Kiyoshi Aikawa; Kazuhiko Honjo
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E88-C, 12, pp. 2382-2384, Dec. 2005, Peer-reviwed, In this letter, the validity of lumped element class-F amplifier circuit design approaches, which were previously proposed by the same authors, has been demonstrated experimentally using microwave InGaP/GaAs HBT. By means of the proposed class-F amplifier design method, more than 4th order higher harmonic frequencies can be taken into account in class-F microwave amplifier design using only lumped ele ement components. In this approach, miniaturization of class-F amplifier circuit has also been realized. A collector efficiency of 71.2% and a power-added efficiency of 69.2% have been measured at an operating fundamental frequency of 1 GHz considering up to the 4th order higher harmonic frequency.
    Scientific journal, English
  • Q-Factor Definition and Evaluation for Spiral Inductors Fabricated Using Wafer Level CSP Technology
    Yutaka Aoki; Kazuhiko Honjo
    IEEE Transactions on Microwave Theory and Techniques, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 53, 10, pp. 3178-3184, Oct. 2005, Peer-reviwed, A novel Q-factor definition and evaluation method are proposed for low-loss high-Q spiral inductors fabricated by using the wafer-level chip-size package (WLP) on silicon substrates, where the copper wiring technology with a polyimide isolation layer is used. In conventional Q-factor evaluation for inductors, a short-circuited load condition is used, where the Q factor is represented by using Y-parameters as Q = Im{1/Y-11}/Re{1/Y-11}. This conventional method provides a Q factor of 20 with 2-5-nH inductance around 3.9 GHz. However, since structures for the spiral inductors are asymmetrical, the short-circuited load condition and short-circuited source condition give different Q values, respectively. The Q-value differences of approximately 100% have often been observed in the WLP. The differences mainly come from differences in loss estimation. In a novel method, a complex conjugate impedance-matching condition is retained both at an input port and an output port of the inductor. The maximum available power gain (G(AMAX)) is introduced to evaluate the energy loss in one cycle. This condition provides a unique insertion loss of passive devices. Thus, the difference of the Q factor depends only on the difference of magnetic and electric energy. The difference of the Q value is reduced.
    Scientific journal, English
  • 77-GHz MMIC Module Design Techniques for Automotive Radar Applications (Invited Paper)
    Yasushi Itoh; Kazuhiko Honjo
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E88-C, No.10, pp.1939-1946, Oct. 2005, Peer-reviwed, Invited, Recent advances in 77-GHz MMIC module design techniques for automotive radar applications are reviewed in this paper. The target of R&D activities is moving front high performance to low cost, mass production, high-yield manufacturing and testing. To meet the stringent requirements, millimeter-wave module design techniques have made significant progress especially in packaging, bonding, and making interface with other modules. In addition, millimeter-wave semiconductor devices and MMICs have made remarkable improvements for low cost and mass production. In this paper, the topics focusing on millimeter-wave semiconductor devices and 77-GHz MMICs are reviewed first. Then the recent R&D results on 77-GHz MMIC module design techniques are introduced, showing the technical trend of packaging, bonding, and making interface with other modules for millimeter-wave, highly-integrated, low-cost MMIC modules. Finally, the existing and future module design issues for automotive radar applications are discussed.
    Scientific journal, English
  • Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering Up to 7th-order Higher Harmonic Frequencies
    Masato Seki; Ryo Ishikawa; Kazuhiko Honjo
    6th Topical Workshop on Heterostructure Microelectronics(TWHM2005), 12-13, Aug. 2005, Peer-reviwed
    International conference proceedings, English
  • Ultra-Wideband Differential Mode Band Pass Filter Embedded in Self -complementary Antennas
    A.Saitou; H.Aoki; N.Satomi; K.Honjo; K.Sato; T.Koyama; K.Watanabe
    2005 MTT-S International Microwave Symposium, IEEE, WE2G-5, pp.717-720-720, Jun. 2005, Peer-reviwed, A 50 Omega matched self-complementary antenna integrated with a four coupled-line ultra-wideband differential mode bandpass filter(BPF), a notch filter and a lowpass filter (LPF) is demonstrated. Broadside- and edge-coupled four couple-line BPFs were found to exhibit up to 170% fractional bandwidth and to exhibit impedance trans-formation ratio of 1.2 with little bandwidth reduction. Thus, 6-stage BPFs were utilized concurrently to transform the self-complementary antenna's constant input impedance (60 pi epsilon(e)(-1/2) Omega ) to 50 Omega. In addition, LPFs with the BPF and notch filters with the BPF were designed and fabricated. Measured insertion losses of the total filter systems were less than 2.6dB over the Ultra-wideband(UWB) band(3.1GRz to 10.6GHz). The filters were embedded in wideband self-complementary antennas to reject the radiation over the next passband and the 5GHz wireless LAN band.
    International conference proceedings, English
  • Influence on the Image Quality by the Spacer Used for FEDs or Thin CRTs
    Kinzo Nonomura; Kazuhiko Honjo
    2005 International SID (Society for Information Display) Symposium, 36, 1, 426-429, May 2005, Peer-reviwed, The pillar spacer that is used to prevent the vacuum vessel from being destroyed by atmospheric pressure is indispensable to achieving the thin-type picture display, which uses electron beams, such as FEDs. We investigated the influence that the pillar spacer set up on the fluorescent surface had on image quality by using two types of pillar spacers. The influence of the pillar spacer on image quality was minimized using the estimation of beam landing and beam spot diameter characteristics. Thus, we were able to prove the possibility of realizing high luminance and high definition in large-sized display panels. © 2005 SID.
    International conference proceedings, English
  • Microwave-Circuit-Embedded Resin Printed Circuit Board for Short Range Wireless Interfaces
    A.Saitou; K.Honjo; K.Sato; T.Koyama; K.Watanabe
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E88-C, 1, pp. 83-88, Jan. 2005, Peer-reviwed, Microwave circuits embedded in a multi-layer resin PCB are demonstrated using low loss resin materials. Resin materials for microwave frequencies were compared with conventional FR-4 with respect to dielectric and conductor loss factors, which proved that losses could be reduced drastically with the low loss material and design optimizations. Baluns, switches and BPFs were designed and fabricated to estimate microwave performances. Measured and simulated insertion losses of the circuits for 2.5 GHz band, were 0.3 dB for a switch, 0.4 dB for a balun and 2.0 dB for a 3-stage Chebyshev BPF. An integration of a switch. a BPF and two baluns was successfully implemented in a multi-layer PCB. Insertion losses of the fabricated integrated circuit were less than 3 dB with 0.1 dB additional loss compared with a sum of individual circuit losses. With estimated results of temperature. characteristics and reliability as well as low loss performances, microwave circuits in resin PCBs can be considered as a viable candidate for microwave equipments.
    Scientific journal, English
  • Class-F amplifier circuit design using lumped-element inductors and capacitors
    Kiyoshi Aikawa; Kazuhiko Honjo
    IEICE Trans. C, J87, 12, pp. 1008-1016, Dec. 2004, Peer-reviwed
    Scientific journal, Japanese
  • Theoretical Analysis of Relationship between Resonator Coupling Coefficient and Phase Noise in Microwave Negative Resistance Oscillator
    K.Hosoya; S.Tanaka; K.Honjo
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E87-C, 12, pp. 2132-2142, Dec. 2004, Peer-reviwed, A new analytical approach which reveals relationships between resonator parameters (unloaded Q-factor, coupling coefficient, and loaded Q-factor) and phase noise in microwave negative-resistance oscillators is presented. On the basis of Kurokawa's theory, this approach derives analytical expressions for the phase noise as a function of the resonator parameters (with particular emphasis on the coupling coefficient). Two types of negative-resistance oscillators-classified according to the manner in which the resonator is used in a circuit-are analyzed. These analyses use realistic circuit configurations and design procedures. The passive network connecting the active device and the resonator, which is shown to have important effects on the above-mentioned relationship, is taken into account. Validity of the new approach is verified through harmonic-balance simulations. The presented analytical approach can provide useful guidelines for choosing the resonator parameters, especially the value of the coupling coefficient, when designing microwave negative-resistance oscillators.
    Scientific journal, English
  • A Novel Q-factor Definition for Microwave Passive Element
    Yutaka Aoki; Kazuhiko Honjo
    7th VLSI Packaging Workshops of Japan, pp.71-74, Dec. 2004, Peer-reviwed
    International conference proceedings, English
  • Improvement in ACLR Asymmetry for W-CDMA InGaP/GaAs HBT Power Amplifier
    Koichi Kimura; Masato Seki; Nobuhisa Matsumura; Kazuhiko Honjo
    Proceedings of 2004 European Microwave Conference, HORIZON HOUSE PUBLICATIONS LTD, 527-530, Oct. 2004, Peer-reviwed, Asymmetry in Adjacent Channel Leakage power Ratio (ACLR) has been often observed in high power amplifiers for digital wireless communication systems such as W-CDMA. This paper describes a method for reducing the asymmetry by controlling bias circuit impedance at sub harmonies. By shortening both at 4MHz and 8MHz at the bias circuits, an 8.37-dB ACLR asymmetry could be suppressed to a 5.05-dB ACLR asymmetry, where a 10.5-dB 3(rd) order Inter Modulation Distortion (IMD3) asymmetry could also be successfully improved to a 1.8-dB IMD3 asymmetry.
    International conference proceedings, English
  • Proposal of microwave class F amplifier circuit using lumped element inductors and capacitors
    Kiyoshi Aikawa; Kazuhiko Honjo
    International Workshop on Modern Science and Technology 2004(IWMST), 9-12, Sep. 2004, Peer-reviwed
    International conference proceedings, English
  • Practical Realization of Self-Complementary Broadband Antenna on Low-Loss Resin Substrate for UWB applications
    A.Saitou; N.Iwaki; K.Honjo; K.Sato; T.Koyama; K.Watanabe
    2004 MTT-S Intenational Microwave Symposium Digest, 1265-1268, Jun. 2004, Peer-reviwed
    International conference proceedings, English
  • Low-Loss, High-Q Spiral Inductor for Wafer Level CSP Using Cu Interconnect Technology with Polyimide Isolation Layer
    Yutaka Aoki; Yoshio Kami; Kazuhiko Honjo
    JIEP(Japan Institute of Electronics Packaging) Transactions, 7, 3, 247-254, May 2004, Peer-reviwed, Low-loss high-Q spiral inductors, which can be applicable to the chip scale packaging (CSP), have been successfully fabricated on silicon substrates using the copper interconnect technology with polyimide isolation layers. In this paper, microwave characteristics for the spiral inductors, related with the size, the number of spiral turns, the isolation layer thickness, the silicon substrate resistivity have been investigated theoretically and experimentally, where the optimized polyimide thickness and the affordable copper inter-connect technology have been developed. A Q factor of 20, has been achieved at 3. 9 GHz with inductance values from 2-5 nH. © 2004, The Japan Institute of Electronics Packaging. All rights reserved.
    Scientific journal, Japanese
  • Recent Advances in Measurement Techniques for Microwave Active Devices and Circuit (Invited Paper)
    Yasushi Itoh; Kazuhiko Honjo
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E87-C, 5, pp. 657-664, May 2004, Peer-reviwed, Recent advances in measurement techniques for microwave active devices and circuits are reviewed in this paper. The R&D activities have been devoted aggressively how to characterize nonlinear performance of high power devices and circuits. They are pulsed IN, a variety of load-pull measurements, probing, sampling, and sensing techniques, supported by the recent significant advances in DSP (Digital Signal Processing), RF components, semiconductor devices, etc. The recent advances in vector network analyzers are of our great interest. They are (a) multi-port vector network analyzers for characterizing mixers, differential devices, packaged components, electronic package characterization, and multi-layer transmission lines, and (b) EO (Electro-Optic) modulated vector network analyzers for characterizing electronic performance of EO devices with the aid of EO modulators and photonic probes. In addition, probing, sampling, and sensing techniques have made great progress to directly measure electromagnetic field, time-domain voltage waveform, and temperature in small spot areas. In this paper, some topics related to these measurement techniques are briefly reviewed. Then the existing and future issues for characterization and measurement techniques of microwave active devices and circuits are discussed.
    Scientific journal, English
  • Advanced Seminar using Microwave CAD ( A New Trend for Seminars in Universities for Proffesional Engineers)
    Kazuhiko Honjo
    Bulletin of The University of Electro-Communications, The University of Electro-Communications, 16, 2, pp. 169-177, Jan. 2004, Peer-reviwed, 近年のマイクロ波CAD/CAEの飛躍的な進歩により、マイクロ波回路はCAD/CAEを用いて設計することが通例になってきている。しかしながらマイクロ波CAD/CAEは使用法が複雑で、ベンダーのセミナーでも企業内教育でも使用法を教えるのが精一杯なのが実状である。一方、マイクロ波回路設計のセミナーは様々な機関で行われているが、講義一辺倒でなかなか身に付かないのが現状である。電気通信大学共同研究センターでは、これらの問題点を解決するためマイクロ波関連基礎理論の講義とマイクロ波CAD実習を組み合わせた高度技術研修を企画実施した。このような研修を企画実施した背景、内容の概要ならびに今後の課題について述べる。

    Recent advances in microwave CAD/CAE technology enable us to perform the efficient and accurate microwave circuit and device design. Since the operation manuals for CAD/CAE are usually sophisticated, time-consuming efforts are reqired to learn their operations. Meanwhile, microwave theory itself is also difficult to understand. The purpose of the new seminar is teaching the basic microwave theory and the advance CAD/CAE technology simultaneously with appropriate examples using the microwave CAD. This report describes the purpose and contents of the newly developed seminar in the University of Electro-Comminications
    Japanese

  • A Possible Simple Structure for Variable Microwave Inductors and Their Filter Applications
    Norio Imai; Kazuhiko Honjo; Akira Saitou
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E87-C, 1, 113-115, Jan. 2004, Peer-reviwed, A new concept of changing inductance values has been proposed, where a part of meander inductor is short circuited to reduce effective line length. Microwave characteristics of the short-circuited meander inductors and the meander inductor without the short circuit have been designed and fabricated on resin circuit boards. The reduction of inductance values by 40% has been successfully realized for the microwave frequency range from 0.5 GHz to 5 GHz for both designed and measured results. Using the proposed structure, low pass filters having two different cut-off frequencies have been designed and tested. Measured cut-off frequency changed 3.0 GHz to 4.2 GHz.
    Scientific journal, English
  • Ulra-High Efficiency Power Amplifier Circuit Using High fmax Transistor
    Kazuhiko Honjo
    2003 Japan-United States Joint Workshop on Space Solar Power System Proceedings, 31-37, Jul. 2003, Peer-reviwed, Invited
    International conference proceedings, English
  • Fundamental Perspective of Future High Power Devices and Amplifiers for Wireless Communication Systems (Invited Paper)
    Yasushi Itoh; Kazuhiko Honjo
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E86-C, 2, 108-119, Feb. 2003, Peer-reviwed, Invited, Fundamental perspective of high power devices and amplifiers for use in wireless communication systems are described in this paper. First, high power devices and device modeling techniques are presented, focusing on the emerging device technologies such as wide bandgap devices (GaN, SiC) and SiGe devices. Then the commercially available device, circuit and system simulators fur wireless communication applications ate introduced. Recent active load-pull measurements have made a remarkable progress in fundamental. harmonic, arid envelope frequencies for high efficiency and low distortion designs. In addition, pulsed DC/RF and on wafer load-pull measurements, have also become popular, which are briefly reviewed. Finally the advances in high power amplifier design techniques for achieving high efficiency and low distortion are presented.
    Scientific journal, English
  • Ultr-high Efficiency Power Amplifier Circuits using High fmax Microwave Transistors (Invited paper)
    Kazuhiko Honjo; Yukiko Kobayashi
    Transactions of IEICE, C, The Institute of Electronics, Information and Communication Engineers, J85, 11, 953-960, Nov. 2002, Peer-reviwed, Invited, 近年のHBT,HEMTなどのヘテロ接合トランジスタばかりでなく,GaAsFET,SiMOSFETなどのマイクロ波トランジスタの高性能化は目覚ましく,数十から数百GHzの最大発振周波数F_を有するトランジスタも一般に用いられるようになってきた.このようなトランジスタでは,動作周波数となる基本波の数倍以上の高調波も基本波と同様に波形整形処理をする能力を有しているため,これを増幅器に応用し電力効率を大幅に改善することが現実的な課題となってきた.本論文ではF級増幅器を例にとり,このような高F_を有するトランジスタと,トランジスタ負荷インピーダンスが基本波に影響を与えずに遇数次高調波に対して短絡,奇数時高調波に対して開放となる基本波リアクタンス補償型F級負荷回路を提案し,これにより超高効率増幅動作が可能であることを述べる。
    Scientific journal, Japanese
  • A Circiut Element Reduction Method for Class-F Ultra-High-Efficiency Amplifiers with Reactance-Compensation Circuits
    Yukiko Kobayashi; Kazuhiko Honjo
    2002 Asia Pacific Microwave Conference Proceedings, 385-388, Nov. 2002, Peer-reviwed
    International conference proceedings, English
  • A simple circuit synthesis method for microwave class-F ultra-high-efficiency amplifiers with reactance-compensation circuits
    Kazuhiko Honjo
    International Journal of Solid-State Electronics, Elsevier Science Ltd, 44, 8, 1477-1482, Sep. 2000, Peer-reviwed, A class-F amplifier circuit by which the transistor load impedance, for even-order higher harmonics, can be kept `zero' and that for odd-order higher harmonics can be kept `open' without affecting the impedance at the fundamental frequency has been developed. This circuit basically consists of transmission lines with lengths equal to a half wavelength and a quarter wavelength at the fundamental frequency where the residual reactance at the fundamental frequency, due to the higher harmonic-frequency circuits, is compensated. Using this circuit, a microwave heterojunction bipolar transistor amplifier was designed using a harmonic-balance simulator. The designed power-added efficiency was more than 90%. The output waveforms, a dynamic load line, and the input/output power response were evaluated.
    Scientific journal, English
  • A 500-mW, high-efficiency Si MOS MMIC amplifier for 900 MHz band use
    Noriaki Matsuno; Hitoshi Yano; Yasuyuki Suzuki; Toshiro Watanabe; ShigekiTsubaki; Tetsu Toda; Kazuhiko Honjo
    IEEE Transactions on Microwave Theory and Techniques, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 48, 8, pp. 1407-1410, Aug. 2000, Peer-reviwed, A 500-mW monolithic-microwave integrated-circuit (MMIC) amplifier using a 0.6-mu m Si MOSFET for 900-MHz-band use has been developed. The input matching network, which consists of a spiral inductor and an MOS capacitor, was integrated onto the chip using a low-cost mass-production large-scale-integration process. A new spiral-inductor model, taking into account the dielectric loss and skin effect of the Si substrate, was introduced. We analyzed the stability and gain dependence on the gate structure of the MOSFET and optimized the gate finger length and the loss of the matching network to achieve high gain and stability. The fabricated MMIC amplifier achieved a linear gain of 15.2 dB and an output power of 27.1 dBm,vith a PAE of 60% under a supply voltage of 4.8 V.
    Scientific journal, English
  • Millimeter-wave active integrated antenna array utilizing harmonic injection for an MMIC oscillator with photonic band gap structure
    Y. Yasuoka; S. Kawasaki; N. Ohkubo; K. Kikuchi; R. Coccioli; Y. Suzuki; K. Honjo
    2000 International Symposium on Antenna Propagation, 1553-1556, Aug. 2000, Peer-reviwed
    International conference proceedings, English
  • A Ka-band HBT MMIC power amplifier
    S. Tanaka; S. Yamanouchi; Y. Amamiya; T. Niwa; K. Hosoya; H. Shimawaki; K. Honjo
    2000 MTT-S International Microwave Symposium, IEEE, 553-556, Jun. 2000, Peer-reviwed, This paper reports on the fully matched, HBT MMIC power amplifier operating at the Ka-band with >1W CW output power. At 30 GHz, the power amplifier delivered maximum output power of 1.59 W with peak PAE of 35% and 6.5-dB linear gain. The achieved performance indicates that HBTs are strong candidate as cost-effective MMICs for Ka-band wireless applications.
    International conference proceedings, English
  • A low phase noise 38-GHz HBT MMIC oscillator utilizing a novel transmission line resonator
    K. Hosoya; S. Tanaka; Y. Amamiya; T. Niwa; H. Shimawaki; K. Honjo
    2000 MTT-S International Microwave Symposium, IEEE, 47-50, Jun. 2000, Peer-reviwed, This paper reports on a low phase noise 38GHz-band HBT MMIC oscillator employing a newly proposed transmission line resonator. The achieved phase noise of -114dBc/Hz at 1MHz offset is believed to be the lowest reported for millimeter-wave oscillators without a dielectric resonator.
    International conference proceedings, English
  • Next Generation Wireless System and Device Technology
    Kazuhiko Honjo; Yukitsuna Furuya
    Aplied Physics, The Japan Society of Applied Physics, 69, 2, 172-175, Feb. 2000, Peer-reviwed, Invited, CDMA方式では,受信信号品質を一定値以上に上げると,誤り訂正符号技術を有効に活用して大幅に伝送誤りを低減することができる.このため画像やデータなどのマルチメディアサービスに適しているが,高周波部品には広いダイナミックレンジと線形性が要求される. FET系デバイスでは,飽和電流以下の信号には優れた線形性を示し,逆に飽和機構を有さないバイポーラデバイスでは過入力に対しても十分に再現できる能力を有する.これらデバイスの超高周波化の現状と施策について述べた.
    Japanese
  • HBT Technology for Microwave and Millimeterwave Application
    K. Honjo; S. Tanaka; H. Shimawaki
    1999 General Assembly URSI, 667, Aug. 1999, Peer-reviwed
    International conference proceedings, English
  • AlGaAs/GaAs HBT IC for 20-Gb/s optical transmission
    Nobuo Nagano; Masaaki Soda; Hiroshi Tezuka; Tetsuyuki Suzaki; Kazuhiko Honjo
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E82-C, 3, pp.465-474, Mar. 1999, Peer-reviwed, This report describes AlGaAs/GaAs HBT ICs for 20-Gb/s optical transmission, the preamplifier and optical modulator driver circuits, and those ICs for 10-Gb/s clock extraction circuits, the rectifier and phase shifter circuits. These ICs were fabricated using our developed hetero guard-ring fully self-aligned HBT (HG-FST) fabrication process. The Pt-Ti-Pt-Au multimetal system was also used as a base ohmic metal to reduce base contact resistance, and a high f(max) of 105 GHz was obtained. Good results in the HBT IC microwave performances were achieved from the on-wafer measurements. The preamplifiers exhibited the broad bandwidth of 20.9 GHz. The optical modulator driver performed a sufficiently large output-voltage swing of 4-VP-P at a 20-Gb/s data rate. The rectifier and the phase shifter circuits achieved good operations at 10-Gb/s. These results suggest that these HBT ICs can be applied to 20-Gb/s optical transmission and 10-Gb/s clock extraction systems.
    Scientific journal, English
  • A 40-Gb/s preamplifier using AlGaAs/InGaAs HBT's with regrown base contacts
    Yasuyuki Suzuki; Hidenori Shimawaki; Yasushi Amamiya; Nobuo Nagano; Hitoshi Yano; Kazuhiko Honjo
    IEEE Journal of Solid-State Circuits, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 34, 2, 143-147, Feb. 1999, Peer-reviwed, A preamplifier for 40-Gb/s optical transmission systems incorporating AlGaAs/InGaAs heterojunction bipolar transistors (HBT's) with p(+) regrown extrinsic base layers is described. The HBT's have a heavily doped regrown p(+)-GaAs layer in the extrinsic base regions and a thin graded InGaAs strained layer for the intrinsic base. Their measured peak f(max) is above 200 GHz, The developed preamplifier provides a bandwidth of 38.4 GHz and a transimpedance gain of 41.1 dB Ohm. Moreover, the frequency response as an optical receiver has a bandwidth of 32 GHz, These characteristics make the preamplifier suitable for use in a 10-Gb/s optical receiver. These results show that AlGaAs/InGaAs HBT's with p(+) regrown extrinsic base layers are very promising for use in 40-Gb/s optical transmission systems.
    Scientific journal, English
  • High power-density 35 GHz HBT power amplifiers
    S. Tanaka; Y. Amamiya; T. Niwa; H. Shimawaki; K. Honjo
    1998 Asia Pacific Microwave Conference, 559-562, Dec. 1998, Peer-reviwed
    International conference proceedings, English
  • Wide-band transimpedance amplifier using AlGaAs/InGaAs pseudomorphic 2-D FET's
    Yasuyuki Suzuki; Kazuhiko Honjo
    IEEE Journal of Solid-State Circuits, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 33, 10, pp. 1559-1562, Oct. 1998, Peer-reviwed, Monolithic wide-band amplifiers have been demonstrated using AlGaAs/InxGa1-xAs/GaAs pseudomorphic two-dimensional electron-gas held-effect transistors. The amplifiers have yielded an 18.0-GHz bandwidth and a 41.8-dB Omega transimpedance gain with a feedback resistance of 100 Omega. In addition, the dependence of In mole fraction far an InxGa1-xAs channel layer on device and amplifier performance has been also investigated. The g(m) and the f(T) in a device, along with the bandwidth, the gain, and the noise performance in an amplifier, have improved as the In mole fraction is varied from 0 to 0.25.
    Scientific journal, English
  • Development of a Si MOS MMIC power amplifier with loss minimized design
    N. Matsuno; H.Yano; Y.Suzuki; T.Watanabe; K.Tanaka; K. Honjo
    28th European Microwave Conference, IEEE Computer Society, 1, 144-149, Oct. 1998, Peer-reviwed, An MMIC driver amplifier using a 0.6-¿m WSi gate Si MOSFET for 900-MHz-band GSM use has been developed. The input matching network which consists of a spiral inductor and a MOS capacitor was integrated onto the chip using a low-cost, mass-production LSI process. These passive elements were accurately modeled, taking into account the loss due to the Si substrate. We analyzed the loss dependence on both the gate structure of the MOSFET and the matching network topology, and optimized them by using large-signal simulations. The fabricated MMIC amplifier achieved a linear gain of 16.2 dB and an output power of 27.1 dBm with a power-added efficiency of 62% under a supply voltage of 4.8 V. These results agreed well with the simulated results and confirmed the accuracy of the design. © 1998 IEEE.
    International conference proceedings, English
  • 50 GHz bandwidth baseband amplifiers using GaAs based HBT's
    Yasuyuki Suzuki; Hidenori Shimawaki; Yasushi Amamiya; Nobuo Nagano; Takaki Niwa; Hitoshi Yano; Kazuhiko Honjo
    IEEE Journal of Solid-State Circuits, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 33, 9, 1336-1341, Sep. 1998, Peer-reviwed, Baseband amplifiers of 50 GHz, using highperformance AlGaAs/InGaAs HBT's with regrown base contacts, have been demonstrated, The transimpedance amplifier achieved a bandwidth of 50.8 GHz with a gain of 11.6 dB. The transimpedance characteristics were of 49.3-GHz bandwidths with a 43.7-dB Ohm transimpedance gain. The resistive and mirror Darlington feedback amplifiers, respectively, achieved a bandwidth of 54.7 GHz with a gain of 8.2 dB and a bandwidth of more than 60.0 GHz with a gain of 6.3 dB, To date, these are the widest bandwidths reported for lumped-circuit-design amplifiers. These results suggest the great potential of these amplifiers for use in future optical communication, microwave and millimeter-wave applications.
    Scientific journal, English
  • Thermal Behavior Depending on Emitter Finger and Substrate Configurations in Power Heterojunction Bipolar Transistors
    Chang-Woo Kim; Norio Goto; Kazuhiko Honjo
    IEEE Transactions on Electron Devices, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 45, 6, 1990-1195, Jun. 1998, Peer-reviwed, Analytical and experimental results are used to investigate thermal behavior depending on the emitter-finger area and substrate thickness in multifinger heterojunction bipolar transistors (HBT's), The temperature distribuions along the depth direction of the substrate are obtained from a three-dimensional (3-D) analysis, The calculated results show a 3-D effect which depends upon the emitter finger area. This effect weakens with increasing the emitter-finger area, As the effect weakens, thinning the substrate effectively reduces the junction temerature (thermal resistance). This is verified by the measured results obtained from a simple thermal-resistance measurement.
    Scientific journal, English
  • Power HBTs for Digital Cellular Applications
    Hidenori Shimawaki; Nobuyuki Hayama; Norio Goto; Kazuhiko Honjo
    The Proceedings of 1998 GaAs MANTECH, CS-MANTECH, 93-96, May 1998, Peer-reviwed, Invited
    International conference proceedings, English
  • Design considerations for millimeter-wave power HBT’s based on gain performance analysis
    Shinichi Tanaka; Yasushi Amamiya; Seiichi Murakami; Hidenori Shimawaki; Norio Goto; Yoichiro Takayama; Kazuhiko Honjo
    IEEE Transactions on Electron Devices, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 45, 1, 36-44, Jan. 1998, Peer-reviwed, Critical design issues involved in optimizing millimeter-wave power HBT's are described. Gain analysis of common-emitter (CE) and common-base (CB) HBT's is performed using analytical formulas derived based on a practical HBT model, While CB HBT's have superior maximum-gain at very high frequencies, their frequency limit is found to be determined by the carrier transit time delay, Thus, to fully exploit the potential gain in a CB HBT, it is essential to maintain a high f(T) even at high collector voltages. The advantage of using CB HBT's in a multifingered device geometry Is also discussed, Unlike CE HBT's, CB HBT's are capable of maintaining a high gain even if the device size is scaled up by increasing the number of emitter-fingers, Moreover, it is found that reducing the wire parasitic capacitance allows emitter ballasting resistance to be used without affecting the gain, Fabrication of HBT's based on these design considerations led to excellent power performance in a CB unit-cell MBT at 25-26 GHz, featuring output pou er of 740 mW and power-added efficiency of 42%.
    Scientific journal, English
  • High fmax AlGaAs/InGaAs HBT’s and their application in millimeter-wave ranges (Invited Paper)
    K. Honjo; H. Shimawaki; S. Tanaka; Y. Suzuki
    The Proceedings of 1997 Asia Pacific Microwave Conference, CITY UNIVERSITY HONG KONG, 733-736, Dec. 1997, Peer-reviwed, Invited, AlGaAs/InGaAs HBTs with selectively-regrown extrinsic base regions have been developed. This HBT structure successfully decreases base resistances try 1/4, compapared to the conventional HBT structures. Maximum oscillation frequency of the HBT is 280 GHz. The newly developed HBTs have opened up applications in millimeter wave ranges. A 26-GHz 3.6-W power amplifier and a DC-60 GHz ultra broad band amplifier were developed by using this new technology.
    International conference proceedings, English
  • 50-GHz bandwidth base-band amplifier using GaAs-based HBTs
    Y. Suzuki; H. Shimawaki; Y. Amamiya; N. Nagano; T. Niwa; H. Yano; K. Honjo
    19th GaAs IC Symposium, I E E E, 143-146, Oct. 1997, Peer-reviwed, Base-band amplifiers have been demonstrated using AlGaAs/InGaAs HBTs with regrown base contacts. The transimpedance amplifier achieved a bandwidth of 49.3 GHz and a transimpedance gain of 43.7 dB Omega. The Darlington feedback amplifier achieved a bandwidth of 54.7 GHz and a gain of 8.2 dB. These are the widest bandwidths yet reported for lumped-circuit-design amplifiers. These performances suggest the great potential of these amplifiers for use in future optical communication and millimeter-wave applications.
    International conference proceedings, English
  • Large signal analysis of power MOSFETs and its application to device design
    Noriaki Matsuno; Hitoshi Yano; Yasuyuki Suzuki; Toshiaki Inoue; Testu Toda; Yasushi Kose; Yoichiro Takayama; Kazuhiko Honjo
    IEICE Transactions, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E80-C, 6, 734-739, Jun. 1997, Peer-reviwed, This paper describes novel techniques far analyzing power MOSFETs. Since the gate width of power MOSFETs is much larger than that of power MESFETs or HJFETs, an appropriate device design to suppress matching circuit losses is needed. These losses and the intrinsic device characteristics are analyzed employing the proposed techniques. which are based on large-signal simulations. Also, new formulas describing the dependence of saturated output power on gate width are derived to perform loss-minimized design. These techniques are applied to the design of power MOSFETs far GSM cellular telephones. As a result, an output power of 35.5 dBm with a power-added efficiency of 55% and a power gain of 10.5 dB at 900 MHz have been achieved.
    Scientific journal, English
  • Common base HBTs for Ka-band application
    Shinichi Tanaka; Yasushi Amamiya; Shiichi Murakami; Hidenori Shimawaki; Norio Goto; Kazuhiko Honjo
    Digest of Topical Symposium on Millimeter Wave, IEEE, 27-30, Jun. 1997, Peer-reviwed, It has been commonly accepted that common-base (CB) HBTs are more suitable for millimeter-wave power amplifier than common-emitter HBTs due to their superior gain. However, the essential gain behavior of CB HBTs is not well understood in detail, and thus the factors limiting their mm-wave performance are not yet clarified. In this work, basic design guidelines of CB HBTs are presented based on a detailed gain performance analysis. In particular, we stress the importance of improving the f(T) at high collector voltages and reducing the feedback component of wire parasitic capacitance. The analysis is in good agreement with the measured RF performance of the fabricated HBTs.
    International conference proceedings, English
  • High-linearity and small chip AlGaAs/GaAs power HBT’s for L-band personal digital cellular application
    Chang-Woo Kim; Nobuyuki Hayama; Norio Goto; Kazuhiko Honjo
    IEEE Electron Device Lett., IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 18, 4, pp. 147-149, Apr. 1997, Peer-reviwed, A high-linearity AlGaAs/GaGs power heterojunction bipolar transistor (HBT) is developed for personal digital cellular phones, For compact chip layout, thermal design was considered, To improve power performance, proton implantation, optimum alloy condition for collector electrodes, and multiple via holes were used, A 2400-mu m(2)-emitter-area HBT fabricated on a 0.5x0.67 mm(2) substrate exhibits adjacent channel leakage powers below -53 dBc for 0.95- and 1.5-GHz pi/4-shifted QPSK modulated input signals at a low collector-emitter voltage of 3.4 V. The HBT produces a 31.7-dBm output power, 50% power-added efficiency, and 15-dB linear power gain at 0.95 GHz, and produced a 31.3-dBm output power, 52% power-added efficiency, and 11.5-dB linear power gain at 1.5 GHz. These results were achieved on about one-fifth of the substrate area of conventional GaAs FET's.
    Scientific journal, English
  • High-efficiency, small-chip AlGaAs/GaAs power HBTs for low-voltage digital cellular phones
    N Hayama; CW Kim; H Takahashi; N Goto; K Honjo
    1997 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS I-III, I E E E, 1307-1310, 1997, Peer-reviwed, A 61% power added efficiency (PAE), high linearity AlGaAs/GaAs power HBT with a very small chip size of 0.58X0.77 mm for use in personal digital cellular phones (PDC) is described, The device layout is optimized to reduce thermal resistance while maintaining a compact chip size. This power HBT, which has 60 fingers of 2X30 mu m emitter, exhibited 31.4 dBm output power and 61% power added efficiency with -51.7 dBc adjacent channel leakage power at a 50 kHz offset frequency under 1.5 GHz pi/4-shifted QPSK modulation when operated at a low collector-emitter voltage of 3.4 V. These results satisfy Japan's PDC standard in a chip area that is less than 20% of that needed for a conventional GaAs power MESFET.
    International conference proceedings, English
  • High efficiency high linearity power AlGaAs/GaAs HBTs for digital cellular phones
    N.Hayama; C.W.Kim; H.Takahashi; N.Goto; K. Honjo
    NEC Research and Development, NEC CORPORATION, 38, 38, 10-16, Jan. 1997, This paper describes the design considerations, fabrication process and performance of a newly-developed power AIGaAs/GaAs Heterojunction Bipolar Transistor (HBT) for personal digital cellular phones. The HBT was fabricated by a hetero-guardring fully self-alignment process technique using only twelve masks. The fabricated HBT exhibited excellent turn on voltage deviation of 31 mV on a 3 inch wafer under practical bias conditions. A 2 x 20 mu m(2) x 60 emitters HBT power amplifier operating at a low collector voltage of 3.4 V, achieved a power added efficiency higher than 50% with adjacent channel leakage power below -53 dBc at 50 kHz offset band for 0.95 and 1.5 GHz pi/4-shifted QPSK modulated signal at a CW-output power level around 31.5 dBm. These results have satisfied Japanese Personal Digital Cellular Phones (PDC) standard in a chip area less than 20% of conventional GaAs power MESFETs. These results indicate that the developed HBT is highly suitable for low-cost and small-size personal digital cellular pourer module application operated at a low DC: supply voltage.
    Research institution, English
  • Recent advance of millimeter wave technology in Japan
    Tsukasa Yoneyama; Kazuhiko Honjo
    IEICE Transactions on Commun, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E79-B, 12, pp. 1729-1740, Dec. 1996, Peer-reviwed, In order to highlight a rapid progress attained in the field of millimeter waves in Japan, this paper describes several key topics including transistors, integrated circuits, planar antennas, millimeter wave photonics, and others.
    Scientific journal, English
  • A 3.6-W 26 GHz band AlGaAs/GaAs HBT power amplifier
    S.Murakami; S.Tanaka; H. Shimawaki; N.Goto; K.Honjo; Y.Ishida
    1999 GaAs IC Symposium, I E E E, 99-102, Nov. 1996, Peer-reviwed, A 3.6-watt 26-GHz band AlGaAs/GaAs heterojunction bipolar transistor (HBT) power amplifier is described. The amplifier is composed of two common-base (CB) HBT chips, and achieves a output power of 3.63 W (35.6 dBm), power-added efficiency (PAE) of 21.2 % and associated gain of 6.2 dB with a 1-dB bandwidth between 25.5 and 26.5 GHz. As far as we know, the output power obtained in this work is more than twice that obtained in other works in these frequency bands.
    International conference proceedings, English
  • Trial Manufacture of 26GHz Band Solid State Power Amplfier (SSPA) Module
    M.Yajima; Y.Hisada; Y.Ishida; Y.Saito; K.Yamamoto; S.Murakami; S.Tanaka; N.Goto; K.Honjo
    1996 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO’96), I E E E, 172-175, Nov. 1996, Peer-reviwed, In this paper, we describe the results of trial manufacture of 26GHz band Solid State Power Amplifier (SSPA) Module. This Module is composed of two common-base (CB) HBT (Heterojunction Bipolar Transistor) chips whose f(max) is over 200GHz with high power density by using selective regrowth of base contact layer.
    It has achieved output power of 3.2W (35.1dBm), power-added efficiency (PAE) of 13.3%. Its gain is 4.7dB because of unbalance between cells, so PAE is small: but high output power, PAE and gain can be achieved by using better balanced HBT chips which NEC has developing.
    International conference proceedings, English
  • Lateral p+/p regrown base contact applied to AlGaAs/InGaAs HBTs with extremely thin base layer
    Y.Amamiya; H.Shimawaki; N.Furuhata; M.Mamada; N.Goto; K.Honjo
    1996 Device Research Conference, I E E E, 38-39, Jun. 1996, Peer-reviwed
    International conference proceedings, English
  • High power high efficiency cell design for 26GHz HBT power amplifier
    S.Tanaka; S.Murakami; Y.Amamiya; H.Shimawaki; N.Furuhata; N.Goto; K.Honjo; K. Yamamoto
    1996 MTT-S, Int. Microwave Symp. Digest, I E E E, 843-846, Jun. 1996, Peer-reviwed
    International conference proceedings, English
  • 3-V operation power AlGaAs/GaAs HBT's for digital cellular phones
    C-W Kim; Nobuyuki Hayama; Hideki Takahashi; Yosuke Miyoshi; Norio Goto; Kazuhiko Honjo
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, 79-C, 5, 617-622, May 1996, Peer-reviwed, AlGaAs/GaAs power HBTs for digital cellular phones have been developed. A three-dimensional thermal analysis taking the local-temperature dependence of the collector current into account was applied to the thermal design of the HBTs. The HBTs were fabricated using the hetero-guardring fully self-aligned transistor technique. The HBT with 2 x 20 mu m(2) x 60 emitters produced a 31.7 dBm CW-output power and 46 % power-added efficiency with an adjacent channel leakage power of -49 dBc at the +/- 50 kHz offset bands for a 948 MHz pi/4-shifted QPSK modulated signal at a low collector-emitter voltage of 3 V. Through comparison with the conventional GaAs power FETs, it has been shown that AlGaAs/GaAs power HBTs have a great advantage in reducing the chip size.
    Scientific journal, English
  • An HBT Preamplifier for 40-Gb/s optical transmission systems
    Y Suzuki; H Shimawaki; Y Amamiya; K Fukuchi; N Nagano; H Yano; K Honjo
    GAAS IC SYMPOSIUM - 18TH ANNUAL, TECHNICAL DIGEST 1996, I E E E, 203-206, 1996, Peer-reviwed, A preamplifier for 40-Gb/s optical transmission systems has been constructed using AlGaAs/InGaAs HBTs with p(+) regrown extrinsic base layers. This preamplifier achieved a bandwidth of 34.6GHz and a transimpedance gain of 41.6dB Omega. This is the widest bandwidth in a preamplifier ever reported. These characteristics are suitable for use in a 40Gb/s optical receiver. The results indicate that AlGaAs/InGaAs HBTs with p(+) regrown extrinsic base layers are very promising for production of 40Gb/s optical transmission systems.
    International conference proceedings, English
  • L-band and Ka band power HBT
    K.Honjo; S.Tanaka; C.W.Kim; N.Goto; Y.Amamiya; H.Shimawaki; N.Hayama
    MTT-S Int. Microwave Symp. Workshop, -, Dec. 1995, Peer-reviwed
    International conference proceedings, English
  • High fmax AlGaAs/InGaAs and AlGaAs /GaAs HBT's with p+/p regrown
    Hidenori Shimawaki; Yasushi Amamiya; Naoki Furuhata; Kazuhiko Honjo
    IEEE Transactions on Electron Devices, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 42, 10, pp. 1735-1744, Oct. 1995, Peer-reviwed, The present paper describes a new approach to fabricating high-performance HBT's with low base resistance. Their base contact resistance is reduced by using MOMBE selective growth in the extrinsic base region-a key process in the fabrication of high-f(max) AlGaAs/InGaAs and AlGaAs/GaAs HBT's. A p(+)/p regrown base structure, which consists of a 40-nm-thick graded InGaAs strained layer and a heavily C-doped regrown contact layer, is used for the AlGaAs/InGaAs HBT's to reduce both their base transit time and base resistance, while preventing aluminum oxide incorporation at the regrowth interface. An h(fe) of 93, an f(T) of 102 GHz, and an f(max) of 224 GHz are achieved for a 1.6-mu m x 4.6-mu m HBT, together with reduced base push-out effects and improved reliability, AlGaAs/GaAs HBT's with an 80-nm-thick uniform base layer that have high f(max) values ranging from 140-216 GHz are also fabricated using the selective growth technique, These results confirm the high potential of the proposed HBT's, especially for microwave and millimeter-wave applications.
    Scientific journal, English
  • High power AlGaAs/GaAs HBTs for Ka-band operation
    C.W.Kim; S.Tanaka; Y.Amamiya; N.Furuhata; H.Shimawaki; Y.Miyoshi; N.Goto; K.Honjo
    1995 GaAs IC Symp, I E E E, 159-162, Oct. 1995, Peer-reviwed
    International conference proceedings, English
  • 3V-operation power HBT for digital mobile communication application
    C.W.Kim; N.Hayama; H.Takahashi; N.Goto; K.Honjo
    1995 Asia Pacific Microwave Conference, 14-17, Oct. 1995, Peer-reviwed
    International conference proceedings, English
  • Applications of HBTs
    Kazuhiko Honjo
    International Journal of Solid-State Electronics, PERGAMON-ELSEVIER SCIENCE LTD, 38, 9, pp. 1569-1573, Sep. 1995, Peer-reviwed, Recent advances in heterojunction bipolar transistor (HBT) technology enable trial uses in some systems utilizing advantages of HBTs such as high power handling capability, high current drive capability, low 1/f noise characteristics, with high frequency and high speed performance. This paper describes methods of improving HBT performance that will accelerate HBTs to be applied in a variety of different areas.
    Scientific journal, English
  • AlGaAs/GaAs HBT with InGaAs etch stop layer
    Y.Miyoshi; S.Tanaka; N.Goto; K.Honjo
    Proceeding of 22nd Int.Symp. on Compound Semiconductor, IOP PUBLISHING LTD, 145, 661-666, 29 Aug. 1995, Peer-reviwed, We report the first fabrication of AlGaAs/GaAs HBTs using InGaAs layer as dry-etching stopper. Various HBTs with different location of the etch-stop layer were fabricated to examine the influence of emitter-periphery guardring thickness on surface recombination. We show that it is vital to control the thickness to optimum 50 nm by selective etching technique, when the emitter periphery recombination current can be effectively reduced. We also discuss the current suppression effect caused by charge accumulation in the InGaAs quantum well. Simulation suggests that the undesirable side-effects can be minimized by appropriate epitaxial layer design.
    International conference proceedings, English
  • Two-dimensional analysis of surface recombination at the extrinsic base surface under various conditions in AlGaAs/GaAs heterojunction bipolar transistors
    Chang-Woo Kim; Norio Goto; Kazuhiko Honjo
    International Journal of Solid-State Electronics, PERGAMON-ELSEVIER SCIENCE LTD, 38, 3, pp. 633-639, Mar. 1995, Peer-reviwed, In order to investigate surface effects, under improved surface conditions at the extrinsic base surface, on the current characteristics in AlGaAs/GaAs HBTs, two-dimensional numerical simulations have been performed. The surface conditions at the extrinsic base surface have been realistically assumed to be determined by the magnitude of the surface recombination velocity, which is evaluated by the surface density and carrier capture cross section of the introduced surface states. From the simulated results, it is found that surface recombination at the extrinsic base surface occurs in a potential well which results from Fermi-level pinning. When the surface recombination velocity is low, the potential well either forms or does not, based on the surface density of the introduced deep states. However, current gain degrades significantly when the potential well is formed at the extrinsic base surface. Concurrently, the effects of ionized surface states on current gain degradation are investigated.
    Scientific journal, English
  • Microwave and millimeterwave high eficiency power HBT
    Norio Goto; Hidenori Shimawaki; Yasushi Amamiya; Naoki Furuhata; Chang-Woo Kim; Shinichi Tanaka; Kazuhiko Honjo
    NEC Research and Development, NEC CORPORATION, 36, 36, pp. 139-145, Jan. 1995, This paper describes AlGaAs/InGaAs and AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) technologies applicable to power amplifiers for microwave and millimeter-wave frequencies. The performance of the power amplifier is characterized using power added efficiency, which is the function of maximum available gain cutoff frequency (f(max)), and collector efficiency. HBT device structure having p(+)/p regrown extrinsic base, compositionally graded intrinsic base, and hetero guard ring composed of depleted AlGaAs, are shown as technologies to improve f(max). Novel class F matching circuit including harmonic trapping, are also shown as a technology to increase collector efficiency. RF power performances of 25.6 dBm (365 mW) saturation power and 23% power added efficiency were obtained at 25.2 GHz.
    Research institution, English
  • Thermal analysis of AlGaAs/GaAs power HBTs using developed model of temperature dependant collector current
    Chang-Woo Kim; Norio Goto; Kazuhiko Honjo
    1994 Asia Pacific Microwave Conference, 3, 881-884, Dec. 1994, Peer-reviwed
    International conference proceedings, English
  • A 20Gb/s AlGaAs/GaAs HBT pre-amplifier IC with on chip spiral inductor peaking
    H.Tezuka; N.Nagano; M.Soda; T.Suzaki; K.Honjo
    1994 Asia Pacific Microwave Conference, pp.1021-1024, Dec. 1994, Peer-reviwed
    International conference proceedings, English
  • Micro-wave/millimeter wave power HBT with regrown extrinsic base layer
    Y.Amamiya; C.W.Kim; N.Goto; S.Tanaka; N.Furuhata; H.Shimawaki; K. Honjo
    1994 Int. Electron Device Meeting, I E E E, 199-202, Dec. 1994, Peer-reviwed
    International conference proceedings, English
  • Applications of HBTs (Invited Paper)
    Kazuhiko Honjo
    Proceedings of IEEE Topical Workshop on Heterostructure Microelectronics, 6-8, Aug. 1994, Peer-reviwed, Invited
    International conference proceedings, English
  • Microwave and millimeter wave HBT development in Japan (Invited Paper)
    Kazuhiko Honjo
    Proceedings of 1994 European Microwave Conference, 208-219, Aug. 1994, Peer-reviwed, Invited
    International conference proceedings, English
  • Advanced HBT Technology for Ka-Band Space Communication
    Norio Goto; Kazuhiko Honjo; Hidenori Shimawaki; Yasushi Amamiya; Tadahiko Sugiura; Kaizo Yamamoto; Toshiyuki Fukuda; Yasumasa Hisada; Ryuji Temino
    19th International Symposium on Space Technology and Science, ISTS94, i-10, 1-3, May 1994, Peer-reviwed
    International conference proceedings, English
  • Millimeter wave heterojunction bipolar transistors ( Invited Paper)
    Kazuhiko Honjo
    Proceedings of US-JAPAN Workshop on Submillimeter-Wave Technology for Diagnostic Applications for Large Plasma Devices, 1-20, Mar. 1994, Invited
    International conference proceedings, English
  • Submicron-square emitter AlGaAs/GaAs HBT's with AlGaAs hetero guardring
    Yosuke Ueda; Nobuyuki Hayama; Kazuhiko Honjo
    IEEE Electron Device Lett., IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 15, 2, 66-68, Feb. 1994, Peer-reviwed, Successful operation of submicron-square emitter AlGaAs/GaAs HBT's is demonstrated for the first time by using a fully mesa-structure-type emitter-base junction-area definition method with an AlGaAs hetero-guardring. The hetero-guardring reduces surface recombination current at the emitter-mesa edge to 1.4 muA/ mum. This is 1/10 of that for devices without the guardring. Here, dc gains of 20, 26, and 40 are achieved for 0.5 mum x 0.5 mum, 0.7 mum x 0.7 mum, and 0.9 mum x 0.9 mum emitter HBT's, respectively. An f(T) of 40 GHz, and an f(max) of 30 GHz are obtained for 0.9 mum x 0.9 mum at a J(C) of 1.0 x 10(5) A/cm2.
    Scientific journal, English
  • MONOLITHIC ULTRA-BROAD-BAND TRANSIMPEDANCE AMPLIFIERS USING ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    N NAGANO; T SUZAKI; M SODA; K KASAHARA; T TAKEUCHI; K HONJO
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 42, 1, 2-10, Jan. 1994, Peer-reviwed, Monolithic ultra-broadband transimpedance amplifiers are developed using AlGaAs/GaAs HBT's. To realize good amplifier performances, two factors are mentioned, those are an affordable HBT fabrication process using self-aligned method and an optimized circuit design considering large signal operations. The developed HBT fabrication process achieves excellent uniformity in DC characteristics. And an effect on amplifier microwave performances, derived from the discrete device uniformity, is estimated. Amplifier circuit configurations are designed by harmonic balance simulation using the extracted large signal device parameters. The fabricated amplifier exhibits a DC to 13.4-GHz bandwidth with an 18.1-dB gain. Fairly good uniformity is also achieved for the amplifier microwave performances. An optical receiver module is constructed mounting the developed HBT amplifier and InGaAs p-i-n photodiode chips. The optical receiver module provides a 9.4-GHz bandwidth and an optical receiver sensitivity of -15.7 dBm at 10-Gb/s data rate.
    Scientific journal, English
  • Monolithic ultra-broad-band transimpedance amplifier using AlGaAs/GaAs HBT's
    Nobuo Nagano; Tetsuyuki Suzaki; Masaaki Soda; Kensuke Kasahara; Tsuyoshi Takeuchi; Kazuhiko Honjo
    IEEE Transactions on Microwave Theory and Techniques, 42, 1, pp. 2-10, Jan. 1994, Peer-reviwed, Monolithic ultra-broadband transimpedance am- plifiers are developed using AIGaAs/GaAs HBT's. To realize good amplifier performances, two factors are mentioned, those are an affordable HBT fabrication process using self-aligned method and an optimized circuit design considering large signal operations. The developed HBT fabrication process achieves excellent uniformity in DC characteristics. And an effect on amplifier microwave performances, derived from the discrete device uniformity, is estimated. Amplifier circuit configurations are designed by harmonic balance simulation using the extracted large signal device parameters. The fabricated amplifier exhibits a DC to 13.4-GHz bandwidth with an 18.1-dB gain. Fairly good uniformity is also achieved for the amplifier microwave performances. An optical receiver module is constructed mounting the developed HBT amplifier and InGaAs p-i-n photodiode chips. The optical receiver module provides a 9.4-GHz bandwidth and an optical receiver sensitivity of -15.7 dBm at 10-Gb/s data rate. © 1994 IEEE
    Scientific journal, English
  • Application of AlGaAs/GaAs HBT's to power devices for digital radio communication
    Norio Goto; Nobuyuki Hayama; Hideki Takahashi; Kazuhiko Honjo
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E76-C, 9, pp. 1367-1372, Sep. 1993, Peer-reviwed, This paper describes the performance of AlGaAs/GaAs HBT's developed for power applications. Their applicability to power amplifiers used in digital mobile radio communications is examined through measurement and numerical simulation, considering both power capability and linearity. Power HBT's with carbon-doped base layers showed DC current gains over 90. A linear gain of 19.2 dB, a maximum output RF power of 32.5 dBm, and a power added efficiency of 56 percent were obtained at 950 MHz. Numerical simulations showed that the power efficiency of HBT amplifiers could be improved by using harmonic trap circuits. Intermodulation measurements showed that third-order distortions were at most -21 dBc level at the 1-dB gain compression point. RF spectrum simulations using pi/4 shift QPSK modulation showed that side-band spectrum generation was less than -45 dBc level at points 50 kHz off of the carrier frequency. These properties indicate that the power handling capabilities and linearity of HBT amplifiers offer promising potentials for digital mobile radio communications.
    Scientific journal, English
  • Analysis on stability of C-doped AlGaAs/GaAs HBTs
    Yasushi Amamiya; Hidenori Shimawaki; Kazuhiko Honjo
    1993 International Conference on Solid State Devices and Materials, 1059-1061, Aug. 1993
    International conference proceedings, English
  • Heterojunction Bipolar Transistors for millimeter wave and ultra-high speed digital applications (Invited Paper)
    Kazuhiko Honjo
    Proceedings of the ARO Workshops on Dual Use Millimeter Wave Technology, 3-9, Aug. 1993, Invited
    International conference proceedings, English
  • Characteristics of current induced degradation in Be doped HBT base in GaAs and InP
    Shin'ichi Tanaka; Hidenori Shimawaki; Kensuke Kasahara; Kazuhiko Honjo
    IEEE Transactions on Electron Devices, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 40, 7, pp. 1194-1201, Jul. 1993, Peer-reviwed, The changes in the device characteristics under high-bias conditions are investigated for InAlAs/InGaAs and AlGaAs/GaAs heterojunction bipolar transistors (HBT's) with heavily Be-doped base layers. While the collector current turn-on voltage shift in AlGaAs/GaAs HBT's has been well-studied, we focus on the base current and 1/f noise characteristics. It is shown that the ideality factor of the surface recombination base current provides information on the Be movement accompanying the degradation. For stress current densities up to 1.5 x 10(5) A/cm2, the Be movement in the InAlAs/InGaAs HBT's is estimated to be no more than a small fraction of the 5-nm setback layer. The 1/f noise measurements highlight the effect of current stressing on the surface recombination in the HBT's. A characteristic spectral shape is found in the noise spectra for the current-stressed AlGaAs/GaAs HBT, possibly originating from the degradation-induced carrier traps. Although both HBT's have similar electronic properties, these results illustrate the striking difference in their stress current behaviors.
    Scientific journal, English
  • AlGaAs/GaAs heterojunction bipolar transistor ICs for optical transmission systems
    Nobuo Nagano; Tetsuyuki Suzaki; Masaaki Soda; Kensuke Kasahara; Kazuhiko Honjo
    IEICE Transactions on Electron, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E76-C, 6, 883-890, Jun. 1993, Peer-reviwed, AlGaAs/GaAs HBT ICs for high bit-rate optical transmission systems, such as preamplifier, D-F/F, differential amplifier, and laser driver, have been newly developed using the hetero guard-ring fully self-aligned HBT (HG-FST) fabrication process. In this process, the emitter mesa is ECR-RIBE dry etched using a thick emitter-metal system of WSi and Ti-Pt-Au as etching mask, and a hetero guard-ring composed of a depleted AlGaAs layer is fabricated on p+ GaAs extrinsic base regions. This process results in highly uniform HBT characteristics. The preamplifier IC exhibits a DC to 18.5-GHz transimpedance bandwidth with a transimpedance gain of 49 dBOMEGA. The rise time and fall time for the D-F/F IC are 30 and 23 ps, respectively. The laser driver IC has a 40-mA(p-p) output current swing. The differential amplifier exhibits a DC to 12.1-GHz bandwidth with a 14.2-dB power gain.
    Scientific journal, English
  • High-fmax AlGaAs/InGaAs HBT fabriated with MOMBE selective grown in extrinsic base region
    H.Simawaki; N.Furuhata; Y.Amamiya; K.Honjo
    1993 Device Research Conference, IEEE Trans. ED vol.40, No.11, 2124-2124, Jun. 1993, Peer-reviwed
    International conference proceedings, English
  • A precise method for determining HBT large signal parameters using noise parameters and S parameters
    Jun'ichi Shimizu; Nobuyuki Hayama; Kazuhiko Honjo
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E76-1, 1, 159-162, Jan. 1993, Peer-reviwed, A precise method for determining AlGaAs/GaAs HBT large-signal circuit parameters is presented. In this method, the parameters are extracted from noise parameters and small-signal S-parameters measured under various bias conditions. The measured noise parameters are fitted to the calculated noise parameters derived from an approximation of Hawkins' equations applied to the macroscopic equivalent circuit. The small-signal S-parameters help to determine the large-signal circuit parameters. The derived large-signal parameters were used to design an HBT oscillator. The simulated results using these parameters were in good agreement with the fabricated device performance.
    Scientific journal, English
  • Stress current behavior of InAlAs/ InGaAs and AlGaAs/GaAs HBT with polyimide passivation
    Shin'ichi Tanaka; Kensuke Kasahara; Hidenori Shimawaki; Kazuhiko Honjo
    IEEE Electron. Device Lett., IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, EDL-13, 9, 560-563, Nov. 1992, Peer-reviwed, InAlAs/InGaAs and AlGaAs/GaAs HBT's, with heavily Be-doped base layers, have been fabricated and their reliability under excessive forward current tested. To understand the HBT material difference, a common process based on a polyimide planarization process is applied to the fabrication. While short-term degradation induced by stress current is observed for AlGaAs/GaAs HBT's (G-HBT's), InAlAs/InGaAs HBT's (I-HBT's) are stable up to a current density of 1.5 x 10(5) A/cm2 indicating the absence of substantial Be diffusion. An analysis of base current has shown a striking contrast between the HBT's in terms of the stressing effect on the surface recombination along emitter junction periphery.
    Scientific journal, English
  • A 1-K ECL gate array implemented with fully self-aligned AlGaAs/GaAs heterojunction bipolar transistors
    Nobuyuki Hayama; Yuzuru Tomonoh; Hideki Takahashi; Kazuhiko Honjo
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E75-C, 10, 1121-1126, Oct. 1992, Peer-reviwed, This paper describes the design considerations, fabrication process and performance of the newly developed 1-K ECL gate array implemented with fully self-aligned AlGaAs/GaAs heterojunction bipolar transistors (HBTs). This gate array consists of 960 three-input OR/NOR ECL basic gates. It contains about 7,600 transistors in a chip area 8.15-mm x 8.45-mm. The basic (FI=FO=1, wiring length L=0-mm) and loaded (FI=F0=3,L=1-mm) gates exhibit delay times of 33-ps and 82-ps, respectively, with 8.5-mW/gate power dissipation. From the measured values, fan-in, fan-out and wiring delay times of 9-ps/FI, 7-ps/FO and 17-ps/mm are estimated, respectively. These results are in good agreement with the designed results obtained using "SPICE" simulation.
    Scientific journal, English
  • 1/f noise reduction in self-aligned HBT with AlGaAs surface passivation
    Nobuyuki Hayama; Kazuhiko Honjo
    IEEE Transactions on Electron Devices, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 39, 9, 2180-2182, Sep. 1992, Peer-reviwed, It is demonstrated that drastic improvement is achieved in base current noise for AlGaAs-passivated fully self-aligned AlGaAs/GaAs HBT, due to extrinsic base recombination current reduction. The base current 1/f noise was over 17 dB lower than that for an non-AlGaAs-passivated HBT, and comparable to that for an AlInAs/InGaAs HBT under a low collector density.
    Scientific journal, English
  • AlGaAs/GaAs HBTs with heavily C-doped extrinsic base layers selectively grown by MOMBE
    Hidenori Shimawaki; Naoki Furuhata; Yasushi Amamiya; Kazuhiko Honjo
    Int. Symp. on GaAs and related compounds, Institute of Physics Conference Series Number 129, 129, 693-698, Sep. 1992, Peer-reviwed
    International conference proceedings, English
  • A new determination method for HBT large signal parameters using bias dependent noise parameters and S parameters
    N.Hayama; J.Shimizu; K.Honjo
    Proceedings of 1992 Asia Pacific Microwave Conference, 539-542, Aug. 1992, Peer-reviwed
    International conference proceedings, English
  • AlGaAs/GaAs heterojunction bipolar transistor ICs for optical transmission system
    N.Nagano; T.Suzaki; M.Soda; K.Kasahara; K.Honjo
    1992 Int. Conf. on Solid State Devices and Materials, 576-578, Aug. 1992, Peer-reviwed
    International conference proceedings, English
  • Hetero-gurdring fully self-aligned HBT for microwave and high-speed digital applications
    Kazuhiko Honjo; Nobuyuki Hayama; Nobuo Nagano; Hideki Takahashi; Shin'ichi Tanaka; Hidenori Shimawaki
    NEC Research and Development, NEC CORPORATION, 33, 33, 324-334, Jul. 1992, Peer-reviwed, Typical features and suitable application fields for HBTs (Heterojunction Bipolar Transistors) are demonstrated by using an active device application radar chart. To enhance the typical features, AlGaAs/GaAs Hetero-Guardring Fully Self-Aligned HBT (HG-FST) has been newly developed. By introducing the Hetero-Guardring layer, composed of depleted AlGaAs, at emitter periphery, an emitter size effect on current gain has been significantly reduced, and 1/f noise has been improved by 17 dB compared with conventional AlGaAs/GaAs HBT. DC and RF yield could also be improved. As suitable applications of HG-FST, a low phase noise 22 GHz MMIC (Monolithic Microwave IC) oscillator, ultrahigh-speed fiber optical communication ICs such as a transimpedance amplifier, a D-type flip-flop, an LD driver circuit, and a general-purpose 1K gate array LSI exhibiting 82 psec propagation delay time under FI = F0 = 3, l = 1 mm condition have been developed.
    Research institution, English
  • Large parameter modeling for HBT and its application to 22 GHz oscillator
    Nobuyuki Hayama; Jun-ichi Shimizu; Kazuhiko Honjo
    IEICE Transactions on Electronics, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E75-C, 6, 683-688, Jun. 1992, Peer-reviwed, Design consideration, fabrication process, and performance of a fully monolithic 22 GHz-band oscillator implemented using a self-aligned AlGaAs/GaAs heterojunction bipolar transistor (HBT) are described. For optimization of the oscillator circuit parameters, large-signal circuit model parameters extracted from bias dependent small-signal S-parameters have been used to maximumize an output power. The developed oscillator employs a 1.5 x 10-mu-m2 emitter AlGaAs/GaAs HBT fabricated by using a dual sidewall self-aligned process. The fabricated oscillator has exhibited an output power of 6.2 dBm at 22.16 GHz with a collector efficiency of 9.5%, and phase noise of -78 dBc/Hz at 100 kHz off-carrier under free-running condition. These results were in good agreement with the large-signal designed results obtained using harmonic balance simulator.
    Scientific journal, English
  • 10Gbit/s optical receiver module using AlGaAs/GaAs HBT preamplifier IC
    Masaaki Soda; Nobuo Nagano; Tsuyoshi Takeuchi; T.Saito; Tetsuyuki Suzaki; Kazuhiko Honjo; Sadao Fujita
    Electron. Lett, IEE-INST ELEC ENG, 28, 3, pp. 336-337, Jan. 1992, Peer-reviwed, A high speed receiver module has been developed for 10 Gbit/s optical transmission systems. To achieve a wideband module, a 12.7 GHz bandwidth AlGaAs/GaAs HBT preamplifier IC and an impedance matched package were used. The receiver sensitivity at 10 Gbit/s is - 15.7 dBm, and is -30.3 dBm with an optical preamplifier.
    Scientific journal, English
  • HBT IC technology and application in Japan (Invited Paper)
    M.Hirayama; K. Honjo; M. Obara; N. Yokoyama
    1991 GaAs IC Symposium, 3-6, Oct. 1991, Peer-reviwed, Invited
    International conference proceedings, English
  • Fully monolithic 22 GHz-band AlGaAs/GaAs HBT oscillator
    Nobuyuki Hayama; Jun-ichi Shimizu; Kazuhiko Honjo
    Electron. Lett., IEE-INST ELEC ENG, 27, 20, 1862-1863, Sep. 1991, Peer-reviwed, The large signal design and performance is described for the fully monolithic 22 GHz-band oscillator implemented using a selfaligned AlGaAs/GaAs heterojunction bipolar transistor. The developed oscillator has exhibited an output power of 6.2 dBm at 22.16 GHz with a collector efficiency of 9.5%, and phase noise of -78 dBc/Hz at 100 kHz off-carrier under free-running conditions. These results were in good agreement with the designed results obtained using a harmonic balance simulator.
    Scientific journal, English
  • Ohmic contacts to p-GaAs with p+/p regrown structures formed by MOMBE
    Hidenori Shimawaki; Naoki Furuhata; Kazuhiko Honjo
    Journal of Applied Physics, AMER INST PHYSICS, 69, 11, pp. 7939-7941, Jun. 1991, Peer-reviwed, Excellent ohmic contacts to p-GaAs are fabricated using selective growth by metalorganic molecular beam epitaxy. Specific contact resistance of about 5 X 10(-8) OMEGA-cm2 is achieved, without any heat treatment, at AuMn/Au and Ti/Pt/Au metal contacts, formed on p+-GaAs layers heavily carbon-doped to 4.4 X 10(20) cm-3. Regrown contacts with planar and lateral p+/p structures are fabricated to clarify interface contact resistivities. A fairly low value of 7.1 X 10(-8) OMEGA-cm2 is established, using an equivalent circuit model, for the lateral contacts to thin p-GaAs layers, reasonably independent of its thicknesses in the range of 9.5-95 nm. These results, in addition to excellent growth selectivity, have confirmed prospects for practical use.
    Scientific journal, English
  • Monolithic ultra-broadband trans-impedance amplifiers using ALGaAs/GaAs HBTs
    N.Nagano; T.Suzaki; A.Okamoto; K.Honjo
    1991 IEEE MTT-S Int. Microwave Symp., 255-258, Jun. 1991, Peer-reviwed
    International conference proceedings, English
  • Emitter size effect on current gain in fully self-aligned HBT with AlGaAs passivation layer
    Nobuyuki Hayama; Kazuhiko Honjo
    IEEE Electron Device Lett., IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 11, 9, pp. 88-390, Sep. 1990, Peer-reviwed
    Scientific journal, English
  • 1/f noise reduction for microwave HBT with AlGaAs surface passivation layer
    N.Hayama; S.Tanaka; K.Honjo
    Proceedings of 1990 Asia Pacific Microwave Conference, 1039-1042, Sep. 1990, Peer-reviwed
    International conference proceedings, English
  • Low frequency noise performance of self-aligned InAlAs/InGaAs HBTs
    Shin'ichi Tanaka; Nobuyuki Hayama; Akio Furukawa; Toshio Baba; Masashi Mizuta; Kazuhiko Honjo
    Electronics Lett., IEE-INST ELEC ENG, 26, 18, pp. 1439-1441, Aug. 1990, Peer-reviwed
    Scientific journal, English
  • A low noise microwave oscillator employing a self-aligned HBT
    Mohamad Madihian; Nobuyuki Hayama; Steve LeSage; Kazuhiko Honjo
    IEEE Transactions on Microwave Theory and Techniques, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 37, 11, pp. 1811-1814, Nov. 1989, Peer-reviwed
    Scientific journal, English
  • Extention of high fT bais region for InAlAs/InGaAs HBT
    S.Tanaka; A.Furukawa; M.Baba; M.Mizuta; M.Madihian; K.Honjo
    1989 Cornell Conference Digest, I E E E, ELECTRON DEVICES SOC & RELIABILITY GROUP, 175-184, Aug. 1989, Peer-reviwed
    International conference proceedings, English
  • Application of AlGaAs/GaAs HBTs to high speed CML logic family
    Mohamad Madihian; Shin-ichi Tanaka; Nobuyuki Hayama; Akihiko Okamoto; Kazuhiko Honjo
    IEEE Transactions on Electron Devices, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, ED-34, 4, pp. 625-631, Apr. 1989, Peer-reviwed
    Scientific journal, English
  • Fully self- aligned AlGaAs /GaAs HBTs for high speed IC application
    Nobuyuki Hayama; Mohamad Madihian; Akihiko Okamoto; Hideo Toyoshima; Kazuhiko Honjo
    IEEE Transactions on Electron Devices, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, ED-35, 11, pp. 1771-1777, Nov. 1988, Peer-reviwed
    Scientific journal, English
  • A 20-28 GHz AlGaAs/GaAs HBT monolithic oscillator
    M.Madihian; H.Shimawaki; K.Honjo
    IEEE 1988 GaAs IC Symp, 113-116, Nov. 1988, Peer-reviwed
    International conference proceedings, English
  • Self-aligned AlInAs/GaInAs HBTs for digital IC Applications
    Shin'ichi Tanaka; Akio Furukawa; Toshio Baba; Kuni'ichi Ohta; Mohammad Madihian; Kazuhiko Honjo
    Electron. Lett, IEE-INST ELEC ENG, 24, 24, pp. 872-873, Jul. 1988, Peer-reviwed
    Scientific journal, English
  • Low noise Ku-band AlGaAs/GaAs HBT oscillator
    N.Hayama; S.LeSage; M.Madihian; K.Honjo
    Digest of 1988 MTT-S Int.Microwave Symp., 679-682, May 1988, Peer-reviwed
    International conference proceedings, English
  • A 15.6 GHz HBT microstrip oscillator
    Steve LeSage; Mohamad Madihian; Nobuyuki Hayama; Kazuhiko Honjo
    Electron. Lett, IEE-INST ELEC ENG, 24, 4, pp. 230-231, Feb. 1988, Peer-reviwed
    Scientific journal, English
  • Systematic design approach for AlGaAs/GaAs HBT using two-dimensional device simulator and circuit simulator
    Kazuhiko Honjo; Mohammad Madihian; Shigetaka Kumashiro
    Electronics and Communications in Japan (Part II: Electronics), 71, 4, 72-80, 1988, Peer-reviwed, A systematic design method for HBT's is described which is based on a two‐dimensional device simulator and a circuit simulator. The validity of this method has been studied by applying it to an AlGaAs/GaAs HBT with a base electrode sandwiched by two emitter electrodes. This structure has a performance better than that of a conventional structure. It is found that the designed values agree well with the measured results for hFE, CBE, CBC and fT. It is shown that the design accuracy of fT and CBE can be improved if the hot electron effect is introduced in the device simulator. A large signal modeling method is proposed by the circuit simulator SPICE‐F' which is modified so that the collector‐emitter offset voltage characteristic to the HBT can be expressed. By way of this new method, the bias dependence of equivalent circuit parameters of the HBT, such as fmax, fT, CBE and CBC, can be computed with good correlation with the experimental data. Copyright © 1988 Wiley Periodicals, Inc., A Wiley Company
    Scientific journal, English
  • A novel fully self-aligned closely spaced electrode HBT for SSI logic family
    M.Madihian; S.Tanaka; N.Hayama; A.Okamoto; K.Honjo
    1987 GaAs IC Symp., 113-116, Nov. 1987, Peer-reviwed, The design consideration, fabrication process, and performances of small-scale integrated (SSI) logic circuits implemented using recently developed self-aligned AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are presented. The logic circuits include an inverter, OR/NOR, NAND/OR, exclusive-OR/NOR, and flip-flops constructed using current-mode logic (CML) gates. Each IC consumes about 30 mW of dc power for a successful operation with a chip yield higher than 50%. Preliminary experimental results with input frequencies higher than 1 GHz indicate capability of these circuits for GHz class operation. SPICE-F simulation shows potential for proper operation with clock/input frequencies exceeding 4 GHz.
    International conference proceedings, English
  • The design, fabrication and characteristics of a novel electrode structure self-aligned HBT with fT of 45 GHz
    Mohamad Madihian; Kazuhiko Honjo; Hideo Toyoshima; Shigetaka Kumashiro
    IEEE Transactions on Electron Devices, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, ED-34, 7, pp. 1419-1428, Jul. 1987, Peer-reviwed
    Scientific journal, English
  • Systematic Design Approach for AlGaAs/GaAs HBT Using Two-Dementional Device Simulator and Circuit Simulator
    Kazuhiko Honjo; Mohamad Madihian; Shigetaka Mumashiro
    IEICE Transaction D, 電子情報通信学会, J70-C, 5, pp. 750-757, May 1987, Peer-reviwed
    Scientific journal, Japanese
  • Sub-micrometer fully self-aligned AlGaAs/GaAs heterojunction bipolar transistor
    Nobuyuki Hayama; Akihiko Okamoto; Mohamad Madihian; Kazuhiko Honjo
    IEEE Electron Device Lett, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, EDL-8, 8, pp. 246-248, May 1987, Peer-reviwed
    Scientific journal, English
  • Novel process for emitter-base-collector self-aligned heterojunction bipolar transistor using a pattern inversion method
    Shin'ichi Tanaka; Mohamad Madihian; Hideo Toyoshima; Nobuyuki Hayama; Kazuhiko Honjo
    Electron. Lett, IEE-INST ELEC ENG, 23, 11, pp. 562-563, May 1987, Peer-reviwed
    Scientific journal, English
  • Fabrication and modelling of a novel self-aligned AlGaAs/GaAs HBT with a fT of 45 GHz
    M.Madihian; K.Honjo; H.Toyoshima; S.Kumashiro
    1986 Int. Electron Device Meeting, 270-273, Dec. 1986, Peer-reviwed
    International conference proceedings, English
  • GaAs monolithic IC's for an X-band PLL-stabilized local source
    Mohamad Madihian; Kazuhiko Honjo
    IEEE Transactions on Microwave Theory and Techniques, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, MTT-34, 6, pp. 707-713, Jun. 1986, Peer-reviwed
    Scientific journal, English
  • Novel design approach for X-band GaAs monolithic analog 1/4 frequency divider
    Kazuhiko Honjo; Mohamad Madihian
    IEEE Transactions on Microwave Theory and Techniques, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, MTT-34, 4, pp. 436-441, Apr. 1986, Peer-reviwed
    Scientific journal, English
  • X-band low-noise GaAs monolithic frequency converter
    Kazuhiko Honjo; Yasuhiro Hosono; Tadahiko Sugiura
    IEEE Transactions on Microwave Theory and Techniques, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, MTT-33, 11, pp. 1231-1235, Nov. 1985, Peer-reviwed
    Scientific journal, English
  • 11GHz band GaAs monolithic VCO with 1/4 analog frequency divider
    M.Madihian; K.Honjo
    1985 GaAs IC Symp, 133-136, Nov. 1985, Peer-reviwed
    International conference proceedings, English
  • 12-GHz band GaAs dual gate MESFET monolithic mixer
    Tadahiko Sugiura; Kazuhiko Honjo; Tsutomu Tsuji
    IEEE Transactions on Microwave Theory and Techniques, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, MTT-33, 2, pp. 105-110, Feb. 1985, Peer-reviwed
    Scientific journal, English
  • X-band low-noise GaAs monolithic frequency converter
    K.Honjo; Y.Hosono; T.Sugiura
    1984 GaAs IC Symp, 177-180, Oct. 1984, Peer-reviwed
    International conference proceedings, English
  • On temperature characteristics for a GaAs monolithic broadband amplifier having resistive load
    Kazuhiko Honjo
    IEEE Transactions on Microwave Theory and Techniques, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, MTT-32, 5, pp. 552-553, May 1984, Peer-reviwed
    Scientific journal, English
  • 12-GHz band low noise GaAs monolithic amplifiers
    Tadahiko Sugiura; Hitoshi Itoh; Tsutomu Tsuji; Kazuhiko Honjo
    IEEE Transactions on Microwave Theory and Techniques, PENTON PUBL INC, MTT-31, 12, pp. 1083-1088, Dec. 1983, Peer-reviwed
    Scientific journal, English
  • 12-GHz-band GaAs dual gate MESFET monolithic mixers
    T.Sugiura; K.Honjo; T.Tsuji
    1983 GaAs IC Symp., 3-6, Oct. 1983, Peer-reviwed
    International conference proceedings, English
  • GaAs Analog IC
    Tadahiko Sugiura; Tsutomu Noguchi; Kazuhiko Honjo
    NEC Technical Journal, 日本電気, 36, 8, pp. 124-127, Aug. 1983, Peer-reviwed
    Japanese
  • 12 GHz band low noise GaAs monolithic amplifiers
    H.Itoh; T.Sugiura; T.Tsuji; K.Honjo; Y.Takayama
    1983 Microwave and Millimeter wave Monolithic Circuit Symp, 54-55, Jun. 1983, Peer-reviwed
    International conference proceedings, English
  • Low-noise, low-power dissipation GaAs monolithic broadband amplifier
    Kazuhiko Honjo; Tadahiko Sugiura; Tsutomu Tsuji; Toshiharu Ozawa
    IEEE Transactions on Microwave Theory and Techniques, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, MTT-31, 5, pp. 412-417, May 1983, Peer-reviwed
    Scientific journal, English
  • Microwave broadband GaAs monolithic amplifier
    Kazuhiko Honjo; Tadahiko Sugiura
    IEICE Transactions on Electronics, E-66, 5, pp. 298-304, May 1983, Peer-reviwed
    Scientific journal, English
  • 12-GHZ-BAND LOW-NOISE GAAS MONOLITHIC AMPLIFIERS
    T SUGIURA; H ITOH; T TSUJI; K HONJO
    IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 30, 12, 1861-1866, 1983, Peer-reviwed
    Scientific journal, English
  • 12-GHZ-BAND LOW-NOISE GAAS MONOLITHIC AMPLIFIERS
    T SUGIURA; H ITOH; T TSUJI; K HONJO
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 31, 12, 1083-1088, 1983, Peer-reviwed
    Scientific journal, English
  • Low-noise low-power-dissipation GaAs monolithic broadband amplifier
    K.Honjo; T.Sugiura; T.Tsuji; T.Ozawa
    IEEE 1982 GaAs IC Symp., 87-90, Nov. 1982, Peer-reviwed
    International conference proceedings, English
  • Ultra broadband GaAs monolithic amplifier
    Kazuhiko Honjo; Tadahiko Sugiura; Hitoshi Itoh
    IEEE Transactions on Microwave Theory and Techniques, also in IEEE Trans. ED, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, MTT-30 (ED-29), 7, pp. 1027-1033 (pp. 1123-1129)-1033, Jul. 1982, Peer-reviwed
    Scientific journal, English
  • ULTRA-BROAD-BAND GAAS MONOLITHIC AMPLIFIER
    K HONJO; T SUGIURA; H ITOH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 29, 7, 1123-1129, 1982, Peer-reviwed
    Scientific journal, English
  • Ultra broad-band GaAs monolithic amplifier
    Kazuhiko Honjo; Tadahiko Sugiura; Hitoshi Itoh
    Electron. Lett, IEE-INST ELEC ENG, 17, 24, pp. 927-928, Nov. 1981, Peer-reviwed
    Scientific journal, English
  • Ultrabroad-band GaAs monolithic amplifier
    K.Honjo; T.Sugiura; H.Itoh; Y.Takayama; K. Ayaki
    IEEE 1981 GaAs IC Symp., IEE-INST ELEC ENG, 17, 24, 43-928, Oct. 1981, Peer-reviwed
    International conference proceedings, English
  • GaAs FET ultra-broadband amplifier for Gbit/s data rate system
    Kazuhiko Honjo; Yoichiro Takayama
    IEEE Trans. Microwave Theory and Techniques, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, MTT-29, 7, pp. 629-636, Jul. 1981, Peer-reviwed
    Scientific journal, English
  • A 25-W 5-GHz GaAs FET amplifier for a microwave landing system
    Kazuhiko Honjo; Yoichiro Takayama
    IEEE Transactions on Microwave Theory and Techniques, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, MTT-29, 6, pp. 579-582, Jun. 1981, Peer-reviwed
    Scientific journal, English
  • A 6 GHz 25W GaAs MESFET with an experimentally optimized pattern
    A. Higashisaka; K.Honjo; Y.Takayama; F.Hasegawa
    1980 MTT-S Int. Microwave Symp., 9-11, May 1980, Peer-reviwed
    International conference proceedings, English
  • A 25W 29dB gain GaAs FET amplifier for MLS
    Y.Takayama; K.Honjo
    1980 MTT-S Int. Microwave Symposium, 496-498, May 1980, Peer-reviwed
    International conference proceedings, English
  • 15W internally matched GaAs FETs and 20 W amplifier operating at 6 GHz
    Kazuhiko Honjo; Takashi Furutsuka; Asamitsu Higashisaka; Fumio Hasegawa; Yoichiro Takayama
    NEC Research and Development, NEC CORPORATION, 56, pp. 157-162, Jan. 1980, Peer-reviwed
    Research institution, English
  • Nonlinearity and Intermodulation Distortion in Microwave-Power GaAs-FET Amplifiers
    Yoichiro Takayama; Kazuhiko Honjo
    NEC Research and Development, 55, 29-36, Oct. 1979, Peer-reviwed
    Research institution, English
  • 15W Internally Matched Power GaAs FET and 20W Amplifier Operating at 6 GHz
    Kazuhiko Honjo; Yoichiro Takayama; Takashi Furutsuka; Asamitsu Higashisaka; Fumio Hasegawa
    1979 IEEE MTT-S International Microwave Symp., 289-292, May 1979, Peer-reviwed
    International conference proceedings, English
  • Broad-band internal matching of microwave power GaAs FET's
    Kazuhiko Honjo; Yoichiro Takayama; Asamitsu Higashisaka
    IEEE Transactions on Microwave Theory and Techniques, MTT-27, 1, pp. 3-8, Jan. 1979, Peer-reviwed
    Scientific journal, English
  • GaAs Power MESFET with a Simplified Recees Structure
    F.Hasegawa; Y.Takayama; A.Higashisaka; T. Furutsuka; K.Honjo
    1978 International Solid State Circuits Conference, 118-119, Feb. 1978, Peer-reviwed
    International conference proceedings, English
  • Internally matched microwave broadband linear power MESFET
    Y.Takayama; K.Honjo; A.Higashisaka; F.Hasegawa
    1977 Int. Solid State Circuit Conference, 166-167, Feb. 1977, Peer-reviwed
    International conference proceedings, English
  • Study on injection locking phenomena in microwave solid-state oscillator having linear frequency variation
    Kazuhiko Honjo; Yoichiro Ogita; Seijiro Furukawa
    IEICE Transaction B, J59-B, 8, pp. 431-436, Aug. 1976, Peer-reviwed
    Scientific journal, Japanese
  • Locking characteristics of injection-locking type TRAPATT amplifiers
    Yoichiro Ogita; Seijiro furukawa; Kazuhiko Honjo
    IEICE Transaction B, J59-B, 6, pp. 333-340, Jun. 1976, Peer-reviwed
    Scientific journal, Japanese

MISC

  • Fundamentals of Microwave Power Amplifier Design -From Basis to Advanced Topics
    HONJO KAZUHIKO
    Dec. 2017, Microwave Workshops and Exhibition, MWE2017, FR1A-1, 1-10, Japanese, Invited, Introduction scientific journal
  • Accurate Design Technique for Mobile Communication Systems (Invited)
    Kazuhiko Honjo
    Lead, Feb. 2014, 59th Education Seminor of Electronics Jisso Technology, Japanese, Invited, Summary national conference
  • High-Efficiency Microwave Power Amplifier and Rectifier
    Kazuhiko Honjo; Ryo Ishikawa
    Nov. 2013, Microwave Workshops and Exhibitions (MWE2013), Japanese, Summary national conference
  • Circuit Congigurations of Microwave Doherty Power Amplifier
    Yoichiro Takayama; Kazuhiko Honjo
    Nov. 2013, Microwave Workshops and Exhibitions (MWE2013), Japanese, Summary national conference
  • Metamaterial and Its Application to Microwave Active Devices
    Kazuhiko Honjo
    Lead, 技術情報協会, Dec. 2012, Material stage, 12, 9, 18-20, Japanese, 1346-3926, 40019516048
  • Advanced Power Amplifier Design Techniques in Microwaves
    Kazuhiko Honjo
    Lead, CQ出版, Nov. 2010, RFワールド, 12, 70-82,5, Japanese, 40017377187, AA12296395
  • Fundamentals of Microwave Amplifiers
    Kazuhiko Honjo
    Nov. 2008, MWE2008 Worlshop Digest, Japanese, Summary national conference
  • Preface to the Special Issue on "Advanced Technology of Wireless Devices, Circuits, and Modules"
    HONJO Kazuhiko; HASHIMOTO Osamu
    01 Jun. 2008, 電気学会論文誌. C, 電子・情報・システム部門誌 = The transactions of the Institute of Electrical Engineers of Japan. C, A publication of Electronics, Information and System Society, 128, 6, 819-819, Japanese, 0385-4221, 10021132488, AN10065950
  • High-Efficiency, Low-Distortion Techniques for Microwave Amplifiers
    Kazuhiko Honjo
    マイクロ波増幅器の高効率化・低ひずみ化を実現するためのポイントを,半導体材料・デバイス,回路技術の視点で解説した.半導体デバイスとしては高電圧動作が可能なGaNは回路損を誘発しにくく高効率化に有利であることを述べた.また高効率な増幅器を実現するためにはトランジスタ出力端子の瞬時電流波形と瞬時電圧波形を制御することが重要であり,このために時間領域からのアプローチと周波数領域からのアプローチの二つがあることを解説している.更に,高調波・分数調波を制御することは増幅器の高効率化,低ひずみ化にとって重要であることを述べた., The Institute of Electronics, Information and Communication Engineers, Apr. 2007, The Journal of IEICE, 90, 4, 263-269, Japanese, Peer-reviwed, Invited, Introduction scientific journal, 0913-5693, 110006272317, AN1001339X
  • Perspective of Microwave High Power Amplifier Design Techniques
    Kazuhiko Honjo
    Lead, Dec. 2006, APMC2006 Fundamental Seminor, Japanese, Summary national conference
  • Application of Microwave Device and Circuit Technology To The Jisso Technology
    Kazuhiko Honjo; Ryo Ishikawa
    Mar. 2006, Proceedings of Japan Institute of Electronics Packaging, Japanese, Summary national conference
  • Noise in Microwave Active Device
    Kazuhiko Honjo
    The Institute of Electronics, Information and Communication Engineers, Feb. 2006, The Journal of IEICE, Vol. 89, 2, 167-172, Japanese, Peer-reviwed, Invited, Introduction scientific journal, 0913-5693, 110004665260, AN1001339X
  • Design Technology for Power Amplifier
    Kazuhiko Honjo
    Nov. 2004, 2004 Microwave Workshops and Exhibition, Japanese, Summary national conference
  • Electrical Properties in Jisso Technology
    Yasushi Ito; Kazuhiko Honjo; Masayoshi Aikawa
    "Jisso"とは日本語の実装(ジッソウ)という言葉がそのまま英語になったものであり,「広範囲な高密度実装技術」を意味する言葉として世界中で用いられつつある.Jisso技術はこれまで材料や機械的な側面からとらえられることが多かったが,今回は電気的な側面,特に高速・高周波の観点からJisso技術の現状の課題を明らかにするとともに,将来のJisso技術について展望する., The Institute of Electronics, Information and Communication Engineers, Nov. 2004, The Journal of IEICE, 87, 11, pp. 912-918, Japanese, Peer-reviwed, Invited, Introduction scientific journal, 0913-5693, 110003231989, AN1001339X
  • Special lssue on Microwave and Millimeter Wave Technology
    HONJO Kazuhiko
    The Institute of Electronics, Information and Communication Engineers, 01 Aug. 2003, IEICE transactions on electronics, 86, 8, 1399-1399, English, 0916-8524, 110003214676, AA10826283
  • Special Issue on Low-Distortion, High-Power, High-Efficiency Active Device and Circuit Technology
    HONJO Kazuhiko
    The Institute of Electronics, Information and Communication Engineers, 01 Dec. 2002, IEICE transactions on electronics, 85, 12, 1949-1949, English, 0916-8524, 110003214436, AA10826283
  • Editorial Preface(Special Issue on Nanotechnology for Optronics and Electronics)
    HONJO Kazuhiko
    The Institute of Electronics, Information and Communication Engineers, 01 Nov. 2002, The Journal of the Institute of Electronics, Information, and Communication Engineers, 85, 11, 783-783, Japanese, 0913-5693, 110003228780, AN1001339X
  • Report on 2001 IEEE MTT-S International Microwave Symposium
    HONJO Kazuhiko; TOKUMITSU Tuneo; SUEMATSU Noriharu; HOSOYA Kenichi; MIYAZAKI Moriyasu; ANADA Tetsuo; LI Leren; ARAI Hiroyuki
    Report on 2001 International Microwave Symposium held in Phoenix, AZ, USA, is presented., The Institute of Electronics, Information and Communication Engineers, 07 Sep. 2001, IEICE technical report. Electron devices, 101, 295, 47-55, Japanese, 0913-5685, 110003201418, AN10012954
  • Editiorial Preface
    HONJO Kazuhiko
    The Institute of Electronics, Information and Communication Engineers, 01 Aug. 2001, The Journal of the Institute of Electronics, Information, and Communication Engineers, 84, 8, 551-551, Japanese, 0913-5693, 110003230860, AN1001339X
  • A Perspective of Microwave Activities in Region 10
    Kazuhiko Honjo
    Jun. 2001, IEEE Microwave Magagine, 2, 2, 96-102, English, Peer-reviwed, Invited, Introduction other
  • Research and Development for Microwave Compound Devices
    Kazuhiko Honjo
    Sep. 1999, 1999 IEICE Society Conference, Japanese, Summary national conference
  • Fundamentals for HBTs
    Kazuhiko Honjo
    Sep. 1998, IEICE Society Convention, Japanese, Summary national conference
  • Millimeterwave Device Technology
    Kazuhiko Honjo
    Mar. 1998, 1998 IEICE General Meeting, Japanese, Summary national conference
  • A Dialectic Approach Effective for Microwave Research
    HONJO Kazuhiko
    A dialectic way of thinking successfully applied for microwave research is introduced. Two examples such as successful developments of an ultra-broadband amplifier and an analog divide by four frequency divider are presented. Values for engineering can be evaluated in a three dimensional space having perpendicular three axes representing senior concept, measurement, co-ordination. For engineering application of the dialectic method, an introduction of appropriate co-ordination axis is mandatory. The coordination includes different application, different technology, and advantages/ disadvantages., The Institute of Electronics, Information and Communication Engineers, 19 Dec. 1997, IEICE technical report. Microwaves, 97, 463, 31-36, Japanese, 110003189291, AN10013185
  • Properties of HBTs
    Kazuhiko Honjo
    Dec. 1997, 1997 Microwave Workshops & Exhibition, Japanese, Invited, Summary national conference
  • Microwave and Millimeterwave Devices
    Kazuhiko Honjo
    Jul. 1997, The Journal of IEICE, 80, 7, 697-703, Japanese, Peer-reviwed, Invited, Introduction scientific journal
  • Microwave and Millimeterwave High-power Devices
    HONJO Kazuhiko
    The main purpose for organizing this special issue is accelerating the research and development of microwave and millimeterwave high-power devices from descrete devices to modules, measurement techniques view points. This issue contains an invited paper describing high efficiency operation of microwave power amplifiers, twelve contributed papers covering design techniques for high power, low-distortion amplifiers and modules utilizing GaAs FET's, heterojunction FET's, HBT's, and SiMOS FET's. We believe that these papers stimulate the future research and development activities. The editorial committee members and a guest editor would like to thank all the authors for submitting their papers to this issue, and reviewers for thier cooperation., The Institute of Electronics, Information and Communication Engineers, 25 Jun. 1997, IEICE transactions on electronics, 80, 6, 725-725, English, 0916-8524, 110003211259, AA10826283
  • Microwave nonlinear circuit
    Kazuhiko Honjo
    Dec. 1995, 1995 Microwave Workshops & Exihibition(MWE), 65-74, Japanese, Invited, Summary national conference, 10006484570
  • Heterojunction Bipolar Transistors
    Kazuhiko Honjo
    Mar. 1994, Riken Forum, Japanese, Summary national conference
  • Millimeter Wave Transistor Technology
    Kazuhiko Honjo
    オーム社, Mar. 1993, エレクトロニクス, 38, 3, p49-51, Japanese, 0421-3513, 40000267026, AN00025075
  • Technology Perspective of Ultra-High Frequency Heterojunction Bipolar Transistors
    Kazuhiko Honjo
    Sep. 1991, Combined Meeting for Electrical, Electronics and Applied Physics Societies, Japanese, Summary national conference
  • Present Status and Problems for Digital Integrated Circuits
    Kazuhiko Honjo
    Oct. 1988, Combined Meeting for Electric, Electronics and Applied Physics Societies, Japanese, Invited, Summary national conference
  • New Generation LSI Technology -GaAs IC-
    Kazuhiko Honjo
    Lead, オーム社, Jan. 1988, Electronics, 33, 1, p39-44, Japanese, 0421-3513, 40000265783, AN00025075
  • GaAs Monolithic IC (Invited)
    Kazuhiko Honjo; Yoichiro Takayama
    Lead, Sep. 1985, 1985 Combined Convention of IEICE, IEEJ, Japanese, Invited, Summary national conference
  • 12 GHZ-BAND LOW-NOISE GAAS MONOLITHIC AMPLIFIERS
    H ITOH; T SUGIURA; T TSUJI; K HONJO; Y TAKAYAMA
    HORIZON HOUSE-MICROWAVE, 1983, MICROWAVE JOURNAL, 26, 5, 51-51, English, Summary international conference, 0192-6225, WOS:A1983QU59000006

Books and other publications

  • Solar Power Satellite/Station
    Kazuhiko Honjo(Chap; Section
    Japanese, Joint work, Power Amplifier for Wireless Power Transfer, Ohmsha, Jul. 2012
  • Metamaterial 2
    Kazuhiko Honjo; Supervised by; T.Ishida; A.Sanada; K.Kajikawa
    Japanese, Joint work, Chapter 18 Microwave Active Device, CMC Publishing Co., May 2012
  • Frontiers of Wireless Power Transmission Technologies
    Kazuhiko Honjo; Supervised by M.Shinohara
    Japanese, Joint work, 3.2 Semiconductor Microwave Amplifier Circuits, CMC Publishing Co., Dec. 2011
  • Substrate Technology and Device Applications of High Frequency Semiconductor
    Y,Sano; J.Okumura(Supervisors; Kazuhiko Honjo
    Japanese, Joint work, Overview for future high frequency applications and devices, CMC Publishing Co., Jul. 2011
  • Fundamentals and Applications of MEMS/NEMS Engineering
    H.Kuwano; Su; Kazuhiko Honjo
    Japanese, Joint work, 3-2 Microwave Engineering, Techno System Co., Apr. 2009
  • Basis and Design Examples for Modern Microwave Transistor Circuits
    Yoshihiro Konishi; Kazuhiko Honjo
    Japanese, Supervisor, Chap.3 Mixer, Chap.4 High Power Amplifier, Chap.5 Broadband Amplifier, Chap.6 Oscillator, K-Lab Publishing Co., Nov. 2008
  • Thin Film Handbook (Second Edition)
    Gakushin; Committee; Kazuhiko Honjo
    Japanese, Joint work, Chapter 2. Section3.2 HBT, Ohm Sha Co., Mar. 2008
  • New Developments of Semiconductor Materials and Devices for High Frequency Applications
    Kazuhiko Honjo; Supervised by Y.Sano; T.Okumura
    Japanese, Joint work, Perspective of High Frequency applications and Devices, CMC Publishing Co., Nov. 2006
  • RF Semiconductor Circuit and Module Technology and Their System Applications
    Yoshihiro Konishi; Kazuhiko Honjo
    Japanese, Supervisor, Chapters 3 Mixers, Chapter 4 High Power Amplifiers, Chapter 5 Broad Band Amplifiers, Chapter 6 Oscillators, K-LAB Publishing Corp., Jan. 2005
  • Applied Chemistry Handbook 6th Edition
    Kazuhiko Honjo; Edited by Chemical; Society of Japan
    Japanese, Joint work, Chapter5-1-4 Compound Semiconductor, Chemical Society of Japan, May 2003
  • The 21st Century Editon of Thin Film Fabrications and Applications
    Kazuhiko Honjo; Edited by; S.Gonda
    Japanese, Joint work, Heterojunction Bipolar Transistor, NTS Corporation, Apr. 2003
  • Semiconductor integrated circuits and their applications
    Yoshihiro Konishi; Kazuhiko Honjo
    Japanese, Editor, Nikkan Kogyo Shimbun, Jun. 2002
  • Introduction to Ultra-High Frequency Electronics
    Kazuhiko Honjo
    Japanese, Single work, Nikkan Kogyo Shimbun, Sep. 1999
  • Handbook for Electronics, Information, Communications
    Kazuhiko Honjo; Edited by IEICE
    Japanese, Joint work, Ohm Corporation, Nov. 1998
  • Fundamentals and Applications of Millimeterwave Technology
    K.Ohata; K.Maruhashi; T.Inoue; K.Honjo
    Japanese, Joint work, Relize Inc., Jul. 1998
  • Thin Film Fabrications and Applications
    K.Honjo; Edited by; S.Gonda
    Japanese, Joint work, Part 4, Chapter 1, Section 2-2, NTS Corporation, Nov. 1997
  • Chinese Translation of "Microwave Semiconductor Circuits"
    Kazuhiko Honjo
    Single work, 全華科技図書股分有限公司, Mar. 1997
  • Microwave Semiconductor Circuits
    Kazuhiko Honjo
    Japanese, Single work, Nikkan Kogyo Shimbun, Sep. 1993
  • Applied Electro Magnetic Wave Engineering
    Kazuhiko Honjo
    Japanese, Joint work, 第5章, Kindai Kagaku Shya, May 1992
  • Microwave Integrated Circuits
    Kazuhiko Honjo; Hiroyo Ogawa; Yoshihiro Konishi
    English, Joint work, Chapter 5, Marcel Dekker, Inc, NY, Aug. 1991
  • Compound Semiconductor Device Handbook
    Y.Takayama; Kazuhiko Honjo
    Japanese, Joint work, 第4章 GaAsFET回路の設計と製作, Sience Forum Corp., Sep. 1986
  • Monolithic Microwave Integrated Circuits Edited by Robert A. Pucel
    Kazuhiko Honjo; Yoichiro Takayama; Tadahiko Sugiura; Hitoshi Ito; Tsutomu Tsuji
    Contributor, pp.160-165, 175-178, 297-304, IEEE Press, 1985
  • Development of microwave GaAs MESFETs for low noise and high power applications
    A.Higashisaka; K.Ohata; K. Honjo
    English, Joint work, Semiconductor Device Technologies'79, Sep. 1981

Lectures, oral presentations, etc.

  • 28-GHz-Band GaN HEMT Outphasing Amplifier MMIC Designed by Considering Insertion Loss at Dual-Power-Level Optimization
    Taiki Kobayashi; Kazuhiko Honjo; Ryo Ishikawa
    Oral presentation, Japanese, IEICE Technical Report MW2023-189
    01 Mar. 2024
  • A Study on Efficiency Improvement by Adjusting Drain Bias Voltage in a Distributed Amplifier
    Kento Iwasaki; Kazuhiko Honjo; Ryo Ishikawa
    Oral presentation, Japanese, IEICE Technicala Report MW2023-174, MW2023-174
    01 Mar. 2024
  • A Study on Wide-Dynamic-Range High-Efficiency GaN HEMT Rectifier System by Using Adaptive Gate Bias Controlling Rectifier
    Taki Nagata; Jun Yamazaki; Kazuhiko Honjo; Ryo Ishikawa
    Oral presentation, Japanese, IEICE Technical Report(2023-11-MW)
    16 Nov. 2023
  • One-to-many OAM Communication by Beam-steering Using Loop Antenna Array Displaced from Focus of Paraboloid
    Kanki Kitayama; Akira Saitou; Kazuhiko Honjo; Ryo Ishikawa
    Oral presentation, Japanese, IEICE Technical Report(2023-11-MW)
    16 Nov. 2023
  • Extension of Communication Distance via Dielectric-Lens Repeater for OAM Multiplexing Communications
    Kaito Uchida; Akira Saitou; Kazuhiko Honjo; Ryo Ishikawa
    Oral presentation, Japanese, IEICE Technical Report(2023-11-MW)
    16 Nov. 2023
  • Study on 28-GHz-Band Loop Antenna Array with Varactor Diodes for OAM Beamforming
    Tsuyoshi Yoshida; Akira Saito; Kazuhiko Honjo; Ryo Ishikawa
    Oral presentation, Japanese, 2023 IEICE Electronics Society Conference
    14 Sep. 2023
  • Long-Distance Loop-Antenna-Array OAM Multiplex Communication Via Dielectric Lens
    Kaito Uchida; Akira Saito; Katsuya Ishihara; Kazuhiko Honjo; Ryo Ishikawa
    Oral presentation, Japanese, 2023 IEICE Electronics Society Conference
    14 Sep. 2023
  • A Wide-Dynamic-Range High-Efficiency GaN HEMT Rectifier by Gate Bias Rectifier
    Taki Nagata; Jun Yamazaki; Kazuhiko Honjo; Ryo Ishikawa
    Oral presentation, Japanese, 2023 IEICE Electronics Society Conference
    14 Sep. 2023
  • A 28-GHz-Band GaN HEMT Outphasing Amplifier MMIC Designed by Considering Insertion Circuit Loss
    Taiki Kobayashi; Kazuhiko Honjo; Ryou Ishikawa
    Oral presentation, Japanese, 2023 IEICE Electronics Society Conference
    12 Sep. 2023
  • 3.7 GHz GaN HEMT Doherty Amplifier with Three-Input Power Level Optimized Design
    Masataka Yamamoto; Kazuhiko Honjo; Ryo Ishikawa
    Oral presentation, Japanese, 2023 IEICE General Convention
    07 Mar. 2023
  • Higher-order OAM-mode Loop Antenna Array for Quasi Millimeter Wave OAM Multiplex Communication
    Katsuya Ishihara; Akira Saitou; Ryo Ishikawa
    Oral presentation, Japanese, 2023 IEICE General Convention
    07 Mar. 2023
  • A study on beam steering of OAM multiplex communication
    Kanki Kitayama; Akira Saitou; Katsuya Ishihara; Kaito Uchida; Kazuhiko Honjo; Ryo Ishikawa
    Oral presentation, Japanese, 2023 IEICE General Convention
    07 Mar. 2023
  • Characteristic Improvement at Back-Off Region by Three-Power-Level Optimization for 3.7-GHz GaN HEMT Doherty Amplifier
    Masataka Yamamoto; Kazuhiko Honjo; Yoichiro Takayama; Ryo Ishikawa
    Oral presentation, Japanese, 2023 IEICE Technical Report
    03 Mar. 2023
  • Microwave Semiconductor Devices and Circuits as Industrial Innovation
    Kazuhiko Honjo
    Invited oral presentation, Japanese, IEICE Technical Report, Invited
    27 Jan. 2023
  • Optimization of Concave Reflector and Feed-Point Azimuths on Loop-Antenna-Array OAM Multiplex Long-Range Communication System
    Katsuya Ishihara; Akira Saitou; Kazuhiko Honjo; Ryo Ishikawa
    Oral presentation, Japanese, IEICE Technical Report
    15 Dec. 2022
  • DC-Feedback-Mode Zero-Threshold GaAs HEMT Rectifier and Voltage-Doubler Rectifier for Applying Negative Gate Bias to Microwave Power Amplifier
    Taki Nagata; Kazuhiko Honjo; Ryo Ishikawa
    Oral presentation, Japanese, IEICE Technical Report
    15 Nov. 2022
  • DC Voltage Synthesis of Sub-mW-Level 2.45-GHz-Band High-Efficiency Rectifiers with Zero-Threshold GaAs HEMTs for Wireless Power Transfer
    Tsuyoshi Yoshida; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, Technical Report of IEICE
    15 Nov. 2022
  • Improvement of Output Back-off Performance on Outphasing Operation by Using 50-Ω Design Power Amplifiers at Quasi-Millimeter-Wave Band
    Nao Ashizawa; Kazuhiko Honjo; Ryo Ishikawa
    Oral presentation, Japanese, IEICE Technical Report
    15 Nov. 2022
  • Study on Quasi-Millimeter-Wave Outphasing Operation by Using 50Ω Power Amplifiers
    Nao Ashizawa; Kazuhiko Honjo; Ryo Ishikawa
    Oral presentation, Japanese, 2022 IEICE Electronics Society Convention
    06 Sep. 2022
  • A 4.5 GHz-Band GaN HEMT Outphasing Amplifier MMIC with Compact Output Combiner
    Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    09 Jun. 2022
  • A High-Gain and High-Efficiency Amplifier Module as DC-RF Power Conversion for Wireless Power Transfer Systems
    Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2022 IEICE General Meeting
    17 Mar. 2022
  • High Efficiency Asymmetric Doherty Power Amplifier with an Impedance Converting Circuit Using Multi-Harmonic Treatment Stubs
    Tsuyoshi Yoshida; Kazuhiko Honjo; Ryo Ishikawa
    Oral presentation, Japanese, 2022 IEICE General Meeting
    17 Mar. 2022
  • Sub-mW-Class 920-MHz/2.45-GHz-Band High Efficiency Rectifiers using Zero-Threshold GaAs HEMTs
    Tsuyoshi Yoshida; Kazuhiko Honjo; Ryo Ishikawa
    Oral presentation, Japanese, 2022 IEICE General Meeting
    17 Mar. 2022
  • A Zero-Threshold-Voltage Diode Based on Inductively-Gated FET
    Akito Sugie; Shinichi Tanaka; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2022 IEICE General Meeting
    16 Mar. 2022
  • High-Efficiency GaN HEMT Rectifier Design Based on Optimized Large-Signal Transistor Model for Wide-Dynamic-Range Rectifier Operation
    Jun Yamazaki; Kazuhiko Honjo; Ryo Ishikawa
    Oral presentation, Japanese, 2022 IEICE General Meeting
    16 Mar. 2022
  • Zero-Threshold GaAs HEMT Rectifier for Supplying Negative Gate Bias Voltage to Power Amplifiers
    Taki Nagata; Kazuhiko Honjo; Ryo Ishikawa
    Oral presentation, Japanese, 2022 IEICE General Meeting
    16 Mar. 2022
  • Study on Curvature Optimization of Converging Reflector for Multi-Mode OAM Waves
    Katsuya Ishihara; Akira Saitou; Haruki Kikuchi; Wataru Wada; Kazuhiko Honjo; 石川; 亮; Ryo Ishikawa
    Oral presentation, Japanese, 2022 IEICE General Meeting
    15 Mar. 2022
  • A 28GHz-Band GaN HEMT Doherty Amplifier MMIC Based on Dual-Power-Level Design Technique
    Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
    Japanese, IEICE Technical Report
    27 Jan. 2022
  • Eigen-mode expansion for fields radiated by currents along θ/φ directions of spherical conformal array
    Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2021 IEICE Society Conference
    16 Sep. 2021
  • 4.5-GHz-band GaN HEMT MMIC outphasing amplifier using lumped element configuration
    Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
    Oral presentation, Japanese, 2021 IEICE Society Conference
    15 Sep. 2021
  • Improving Performance of Integrated Loop Antenna Arrays for OAM Communication by Balun Matching
    Haruki Kikuchi, Akira Saitou, Wataru Wada, Hiroshi Suzuki, Kazuhiko Honjo, Ryo Ishikawa
    Oral presentation, Japanese, 2021 IEICE Society Conference
    15 Sep. 2021
  • A Quasi-Millimeter-Wave GaN HEMT MMIC Doherty Amplifier by Dual-Power-Level Design
    Ryo Ishikawa; Takuya Seshimo; Yoichiro Takayama; Kazuhiko Honjo
    Oral presentation, Japanese, 2021 IEICE General Convention
    10 Mar. 2021
  • Improvement of Loop Antenna Array with Capacitor-Loaded Spiral Reflector for OAM Multiplexing Communication and Wireless Power Transmission
    Wataru Wada; Ryo Ishikawa; Akira Saitou; Hisanosuke Miyake; Haruki Kikuchi; Hiroshi Suzuki; Kazuhiko Honjo
    Oral presentation, Japanese, 2021 IEICE General Convention
    10 Mar. 2021
  • Evaluation of Eigenmode Transmission for OAM multiplexing with Circular Loop Antenna Arrays
    Haruki Kikuchi; Akira Saitou; Hisanosuke Miyake; Wataru Wada; Hiroshi Suzuki; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2021 IEICE General Convention
    10 Mar. 2021
  • A 28GHz-Band GaN HEMT Doherty Amplifier MMIC Based on Dual-Power-Level Design Technique
    Ryo Ishikawa; Takuya Seshimo; Yoichiro Takayama; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    27 Jan. 2021
  • Study on Series Connected Harmonic-Tuned GaN HEMT Doherty Power Amplifier for Directly Exciting a Loop Antenna of OAM communication with Balanced Mode
    Masahiro NAKADA; Yoichiro TAKAYAMA†; Ryo ISHIKAWA; Kazuhiko HONJO
    Oral presentation, Japanese, IEICE Technical Report
    17 Jul. 2020
  • A Study on Integration of Loop Antenna Array for OAM Multiplex Communication
    Haruki Kikuchi; Akira Saitou; Hisanosuke Miyake; Wataru Wada; Hiroshi Suzuki; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2020 IEICE General Conference
    18 Mar. 2020
  • Suppression of interference wave using resistors for OAM multiplexing communication with loop arrays
    Hisanosuke Miyake; Akira Saitou; Hiroshi Suzuki; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2020 IEICE General Conference
    18 Mar. 2020
  • Development of 900 MHz/4.5 GHz Band 2×2 Dimensional Change-Over Switch
    Taketo Ishii; Nobutaka Nakamaru; Hiroshi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2020 IEICE General Conference
    18 Mar. 2020
  • A 3.9-GHz-Band Outphasing Power Ampli er with Compact Combiner
    Ryoichi Ogasawara; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2020 IEICE General Conference
    18 Mar. 2020
  • Improvement of transmission isolation by controlling port directions of loop arrays
    Akira Saitou; Hisanosuke Miyake; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2020 IEICE General Conference
    18 Mar. 2020
  • Low Spurious and High Efficiency Asymmetric Doherty Ampli er Using a T-shaped Stab
    Yuki Takagi; Naoki Hasegawa; Yoshichika Ota; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2020 IEICE General Conference
    18 Mar. 2020
  • Shared Loop Antenna for OAM Multiplex Communication and Wireless Power Transmission simultaneously
    Wataru Wada; Ryo Ishikawa; Akira Saitou; Hisanosuke Miyake; Haruki Kikuchi; Hiroshi Suzuki; Kazuhiko Honjo
    Oral presentation, Japanese, 2020 IEICE General Conference
    18 Mar. 2020
  • Wide Dynamic Range Rectifier Using Zero-threshold GaAs HEMT
    Jun Yamazaki; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2020 IEICE General Conference
    18 Mar. 2020
  • Design Theory and Techniques for High Efficiency Microwave Power Amplifiers Used in SSPS
    Kazuhiko Honjo
    Keynote oral presentation, Japanese, The 5th Symposium on Space Solar Power Satelite, Invited
    21 Nov. 2019
    21 Nov. 2019- 22 Nov. 2019
  • Suppression of interference wave by resistor installation for OAM Communication using Loop Arrays Antenna
    Hisanosuke Miyake; Akira Saitou; Hiroshi Suzuki; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report, Domestic conference
    14 Nov. 2019
  • High-Efficiency GaN HEMT Doherty Power Amplifier Based on Two-Power-Level Impedance Optimization including Harmonic Treatment
    Takuya Seshimo; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report, Domestic conference
    14 Nov. 2019
  • High Efficiency Doherty Amplifier Using T-Shaped Stabs With Spurius Suppression and Impedance Conversion Function
    Yuki Takagi; Naoki Hasegawa; Yoshichika Ohta; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report, Domestic conference
    14 Nov. 2019
  • Gate-Switching-Mode Low Power Transistor Rectifier
    Tsuyoshi Yoshida; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report, Domestic conference
    Nov. 2019
  • Analysis of received currents on loop antenna array for plane wave incidence
    Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2019 IEICE General Conference, Domestic conference
    22 Mar. 2019
  • Affect of feeding cable on mutual impedances for OAM Communication using Loop Arrays
    Hisanosuke Miyake; Akira Saitou; Hiroto Otsuka; Ryohei Yamagishi; Hiroshi Suzuki; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2019 IEICE General Conference, Domestic conference
    22 Mar. 2019
  • Relationship between Loop and Circular-Array Anntenas Generating OAM Waves
    Hiroshi Suzuki; Akira Saitou; Kazuhiko Honjo; Ryo Ishikawa
    Oral presentation, Japanese, 2019 IEICE General Conference, Domestic conference
    22 Mar. 2019
  • Low Power Rectifier Using Enhancement-mode GaAs HEMT
    Tsuyoshi Yoshida; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2019 IEICE General Conference, Domestic conference
    22 Mar. 2019
  • 10-MHz-Band Ampli cation/Recti cation Module with Zero-threshold Transistor
    Takaharu Kume; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2019 IEICE General Conference, Domestic conference
    22 Mar. 2019
  • Harmonic-Tuned High-Efficiency GaN HEMT Doherty Power Amplifier without Quarter-Wave Transformer
    Takuya Seshimo; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2019 IEICE General Conference, Domestic conference
    22 Mar. 2019
  • GaN HEMT MMIC Asymmetric Doherty Amplifier Designed with an Optimization at Both Back-Off and Saturation Levels
    Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
    Oral presentation, Japanese, 2019 IEICE General Conference, Domestic conference
    22 Mar. 2019
  • High-Efficiency Asymmetric Doherty Amplifier Using GaN HEMTs with Different Saturation Power Levels
    Yuki Takagi; Naoki Hasegawa; Yoshichika Ota; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2019 IEICE General Conference, Domestic conference
    22 Mar. 2019
  • High-efficiency Operating Range Expansion for Chireix Ampli ers
    Tsukasa Yasui; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2019 IEICE General Conference, Domestic conference
    22 Mar. 2019
  • Multi-Band RF Hardware Techniques for 5G Mobile Communication Systems
    Yasushi Yamao; Kazuhiko Honjo; Ryo Ishikawa; Yoichiro Takayama; Akira Saitou
    Oral presentation, Japanese, IEICE Technical Report (RCS2018 325), Domestic conference
    08 Mar. 2019
  • A 10-MHz-Band Gate Zero-Bias Amplification/Rectification Module using Zero-Threshold Si MOS Transistor
    Takaharu Kume; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report, Domestic conference
    07 Mar. 2019
  • Vector Potential Analysis on OAM Waves Generated by Circular-Array and Loop Antennas
    Horoshi Suzuki; Akira Saitou; Kazuhiko Honjo; Ryo Ishikawa
    Oral presentation, Japanese, IEICE Technical Report (RCS2018 323), Domestic conference
    07 Mar. 2019
  • Miniatuarization of harmonic impedance transformer and its application to class-F amplifier
    Kento Saiki; Shinichi Tanaka; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report, Domestic conference
    15 Nov. 2018
  • Evaluation of OAM-MIMO Communication using Loop Antenna Arrays
    Keito Otsuka; Ryohei Yamagishi; Akira Saitou; Hiroshi Suzuki; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report, IEICE, Domestic conference
    15 Nov. 2018
  • OAM-mode unification with a closed-grand plane for a circular-loop antenna array
    Ryohei Yamagishi; Keito Otsuka; Akira Saitou; Hiroshi Suzuki; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report, IEICE, Domestic conference
    15 Nov. 2018
  • Independently-biased High-efficiency Low-distortion GaN HEMT Darlington Power Amplifier
    Atsushi Kitamura; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 電子情報通信学会技術研究報告, IEICE, Domestic conference
    18 Oct. 2018
  • Design and Evaluation of 18GHz-/28GHz\ GaN HEMT Power Amplifier MMIC
    Tsukasa Yasui; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2018 IEICE Society Conference, Domestic conference
    14 Sep. 2018
  • Analysis on orbital angular momentum of field radiated by loop antenna for OAM Communication
    Akira Saitou; Hiroto Otsuka; Ryohei Yamagishi; Hiroshi Suzuki; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2018 IEICE Society Conference, Domestic conference
    14 Sep. 2018
  • Mesured Estimate of 8-Channel Multiplexing OAM Communication Loop Exploiting Orthogonal Polarizations of Loop Antennas
    Hisanosuke Miyake; Akira Saitou; Hiroto Otsuka; Ryohei Yamagishi; Hiroshi Suzuki; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2018 IEICE Society Conference, Domestic conference
    11 Sep. 2018
  • Performance for Long-Range OAM Communication Using Loop Antenna Array in 12-GHz Band
    Hiroto Otsuka; Ryohei Yamagishi; Akira Saitou; Hiroshi Suzuki; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2018 IEICE Society Conference, Domestic conference
    11 Sep. 2018
  • Effect of Proximate Reflector for OAM Communication Using Loop Antennas Arrays
    Ryohei Yamagishi; Hiroto Otsuka; Akira Saitou; Hiroshi Suzuki; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2018 IEICE Society Conference, Domestic conference
    11 Sep. 2018
  • Proposal of Multifunctional SPDT Device
    Hiroshi Mizutani; Kazuhiko Honjo
    Oral presentation, Japanese, 2018 IEICE Society Conference, Domestic conference
    11 Sep. 2018
  • Experimental Verification of Multifunctional SPDT Device
    Nobutaka Nakamaru; Hiroshi Mizutani; Takuya Seshimo; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2018 IEICE Society Conference, Domestic conference
    11 Sep. 2018
  • Design theory and examples for microwave GaN HEMT power amplifier
    Kazuhiko Honjo
    Invited oral presentation, Japanese, 2018 WiPoT Symposium, Invited, Domestic conference
    24 Jul. 2018
  • 11GHz High-Efficiency GaN HEMT Power Amplifier with Harmonic Reactive Terminations
    Satoshi Ogawa; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2018 IEICE General Conference, Domestic conference
    21 Mar. 2018
  • High Efficiiency and Low Distortion GaN HEMT Darlington Ampli er Consisting of Independent Bias
    Atsishi Kitamura; Yoichirou Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2018 IEICE General Conference, Domestic conference
    21 Mar. 2018
  • Relation of Transmission Isolation and EVM Using Loop Antenna Array for OAM Communication
    Hiroto Otsuka; Ryohei Yamagishi; Akira Saito; Hiroshi Suzuki; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2018 IEICE General Conference, Domestic conference
    20 Mar. 2018
  • An investigation on doubling multiplicity for OAM communication using circular loop antennas
    Akira Saitou; Hiroto Otsuka; Ryohei Yamagishi; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2018 IEICE General Conference, Domestic conference
    20 Mar. 2018
  • Analysis on Interference Wave Suppression Effect with Port Azimuths Control of Loop Antenna Array for OAM Communication
    Hiroto OTSUKA; Ryohei YAMAGISHI; Akira SAITOU; Ryo ISHIKAWA; Kazuhiko HONJO
    Oral presentation, Japanese, IEICE Technical Report, Domestic conference
    10 Nov. 2017
  • Improvement of Mode Uniqueness for OAM Communication Using a Loop Array by Reflector Plane
    Ryohei YAMAGISHI; Hiroto OTSUKA; Akira SAITOU; Ryo ISHIKAWA; Kazuhiko HONJO
    Oral presentation, Japanese, IEICE Technical Report, Domestic conference
    10 Nov. 2017
  • Effects of FET Drain-Gate Feedback Capacitance on Output Power and Power Efficiency of Microwave Power Amplifier
    Yoichiro TAKAYAMA; Kazuhiko HONJO; Ryo ISHIKAWA
    Oral presentation, Japanese, IEICE Technical Report, Domestic conference
    09 Nov. 2017
  • Wide-Band High-Efficiency GaNHEMT Amplier Basedon Multi-Harmonic Treatments at Low SHF Band
    Yuki TAKAGI; Ryo ISHIKAWA; Kazuhiko HONJO
    Oral presentation, Japanese, IEICE Technical Report, Domestic conference
    09 Nov. 2017
  • Efficiency Improvement of Concurrent Dual-Band GaN HEMT Power Amplifier with Two Amplification Circuits and Duplexers
    Haruka Nishizawa; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report, Domestic conference
    09 Nov. 2017
  • 4.5/8.5GHz-Band Concurrent Dual-Band High-Efficiency GaNHEMT Power Amplifier
    Haruka Nishizawa Yoichiro Takayama Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2017 IEICE Society Conference, Domestic conference
    13 Sep. 2017
  • 4.5-/8.5-GHz-Band Concurrent Dual-Band High-Efficiency GaN HEMT Power Amplifier
    Haruka Nishizawa Yoichiro Takayama Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2017 IEICE Society Conference, Domestic conference
    12 Sep. 2017
  • Interference Wave Suppression Effect with Port Azimuths Control of Loop Array Antenna for OAM Communication
    Hiroto Otsuka; Ryohei Yamagishi; Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2017 IEICE Society Conference, Domestic conference
    12 Sep. 2017
  • An investigation on doubling multiplicity for OAM communication using circular loop antennas
    Akira Saitou; Hiroto Otsuka; Ryohei Yamagishi; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2017 IEICE Society Conference, Domestic conference
    12 Sep. 2017
  • Improvement of Mode Uniqueness for OAM Communication Using Loop Array with Reflector Plane
    Ryohei Yamagishi; Hiroto Otsuka; Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2017 IEICE Society Conference, Domestic conference
    12 Sep. 2017
  • Study on Compact Bidirectional DC-DC Converter Consisting of100-MHz High-Efficiency Amplifier and Rectifier
    Shogo MIZOGUCHI; Kazuhiko HONJO; Ryo ISHIKAWA
    Oral presentation, English, 2017 Thailand-Japan Microwave Conference
    Jun. 2017
  • 8.5 GHz-Band GaN HEMT High-Efficiency Power Amplifier with Harmonic Reactive Termination
    Haruka NISHIZAWA; Yoichiro TAKAYAMA; Ryo ISHIKAWA; Kazuhiko HONJO
    Oral presentation, English, 2017 Thailand-Japan Microwave Conference
    Jun. 2017
  • Study on 900 MHz Band Class-F GaAs HEMT Rectifier with Wide Dynamic Range Operation
    Misako FUJIMAKI; Ryo ISHIKAWA; Kazuhiko HONJO
    Oral presentation, English, 2017 Thailand-Japan Microwave Conference
    Jun. 2017
  • Concurrent 4/8-GHz GaN HEMT MMIC Amplifier
    Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
    Oral presentation, Japanese, 2017 IEICE General Conference, Domestic conference
    23 Mar. 2017
  • 4-GHz GaN HEMT F-Class Amplifier Using CRLH Transmission Line Stub Harmonic Tuning Circuit Based only on Metal
    Souta Koizumi; Shinichi Tanaka; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2017 IEICE General Conference, Domestic conference
    23 Mar. 2017
  • Study on Impedance Optimization for High-Efficiency Transistor Rectifier
    Minato Machida; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2017 IEICE General Conference, Domestic conference
    23 Mar. 2017
  • Study on 4.5/4.9-GHz-Band Tunable High-Efficiency GaN HEMT Power Amplifier
    Kazuki Mashima; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2017 IEICE General Conference, Domestic conference
    23 Mar. 2017
  • Proposal of Band-Switchable, Reconfigurable RF Switch
    Hiroshi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2017 IEICE General Conference, Domestic conference
    23 Mar. 2017
  • Evaluation of Long-Distance OAM Comminication Using Loop Array Antenna
    Hiroto Otsuka; Ryohei Yamagishi; Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2017 IEICE General Conference, Domestic conference
    23 Mar. 2017
  • Analysis of single-mode radiation for the magnetic quantum number with circular loop antenna
    Akira Saitou; Hiroto Otsuka; Ryohei Yamagishi; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2017 IEICE General Conference, Domestic conference
    23 Mar. 2017
  • Radiation Characteristics of Unit Cell for CRLH Transmission Line
    Takuya Seshita; Nobutaka Nakamaru; Hiroshi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2017 IEICE General Conference, Domestic conference
    23 Mar. 2017
  • Dual-Band High-Efficiency GaN HEMT Amplifier with Multi-Harmonic Treatment Using T-shaped Stabs
    Yuki Takagi; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2017 IEICE General Conference, Domestic conference
    23 Mar. 2017
  • Evaluation of influence of reflector on long-distance OAM comminication using circular loop array antenna
    Ryohei Yamagishi; Hiroto Otsuka; Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2017 IEICE General Conference, Domestic conference
    23 Mar. 2017
  • Design and Fablication of Two Stage Wideband Negative Feedback Amplifier Using Voltage Feedback Pair
    Hiroto Otsuka; Ryo Ishikawa; Kazuhiko Honjo
    Invited oral presentation, Japanese, IEICE Technical Report, Invited, Domestic conference
    02 Mar. 2017
  • Broadband Power Amplifier Using Current Feedback Pair of Two Transistors
    Arisu Maruyama; Ryo Ishikawa; Kazuhihi Honjo
    Invited oral presentation, Japanese, IEICE Technical Report, Invited, Domestic conference
    02 Mar. 2017
  • 4-value Multiplexing Angular Momentum Communication Using Circular Loop Antennas
    Akira Saitou; Hiroto Otsuka; Ryohei Yamagishi; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report, Domestic conference
    16 Feb. 2017
  • 900MHz Band Class-F GaAs HEMT Rectifier for Wide Dynamic Range Operation
    Misako Fujimaki; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report, Domestic conference
    16 Dec. 2016
  • Large Signal GaN HEMT Model for Accurate RF Power Simulatiom
    Tukasa Yasui; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report, Domestic conference
    16 Dec. 2016
  • Large Signal Characteristics and Linearity Improvement for Single-GaNHEMT Dual-Band Power Amplifier in Cincurrent Mode Operation
    Arisu Maruyama; Yoichiro Takayama; Ryo Ishikawa; Kazuhihi Honjo
    Oral presentation, Japanese, Domestic conference
    15 Dec. 2016
  • A High-Efficiency GaN HEMT Power Amplifier with Harmonic Reactive Termination Using a T Shaped Stab for Two Harmonics
    Yuki Takagi; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report, Domestic conference
    15 Dec. 2016
  • Concurrent Dual-Band Amplifier Consisting of Two Amplifier Units and Duplexer
    Haruka Nishizawa; Jun Enomoto; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report, Domestic conference
    15 Dec. 2016
  • Analysis on Orbital Angular Momentum Communication Using Loop Antenna Arrays
    Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2016 IEICE Society Conference, Domestic conference
    23 Sep. 2016
  • Measured/Simulated Estimate of Orbital Angular Momentum Communication Using Loop Antenna Arrays
    Hiroto Otsuka; Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2016 IEICE Society Conference, Domestic conference
    23 Sep. 2016
  • Improvement of GaN HEMT Device Model for VDS-ID Accuracy in Third-Quadrant
    Tsukasa Yasui; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2016 IEICE Society Conference, Domestic conference
    21 Sep. 2016
  • Large Signal Characteristics of RF Switch Based on HPF/LPF Switching Concept
    Hiroshi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2016 IEICE Society Conference, Domestic conference
    21 Sep. 2016
  • S-parameter Analysis of Unit Cell for Active CRLH Transmission Line using Varacter Diodes
    Takuya Seshimo; Nobutaka Nakamura; Hiroshi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2016 IEICE Society Conference, Domestic conference
    21 Sep. 2016
  • High-Efficiency Concurrent Dual-Band Amplifier Combining with Individual Amplifications
    Jun Enomoto; Haruka Nishizawa; Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
    Oral presentation, Japanese, 2016 IEICE Society Conference, Domestic conference
    20 Sep. 2016
  • GaN HEMT F-Class Amplifier using CRLH Transmission Line Stub Harmonic Tuning Circuit
    Souta Koizumi; Shinichi Tanaka; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2016 IEICE Society Conference, Domestic conference
    20 Sep. 2016
  • Linearity Improvement for Single-GaN HEMT Dual-Band Power Amplifier in Concurrent Operation Mode
    Alice Maruyama; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2016 IEICE Society Conference, Domestic conference
    20 Sep. 2016
  • 5G R&D Activities for Systems control technologies in Multi-Band and Multi-Access Layered Cells
    Y. Ichikawa; H. Asano; Y.Morihiro; Y.Okamura; T.Ichikawa; M.Mizoguchi; T. Maniwa; Y.Yamao; K. Honjo
    Oral presentation, Japanese, 2016 IEICE General Conference, Domestic conference
    15 Mar. 2016
  • A High-Efficiency GaN HEMT Power Amplifier with Harmonic Reactive Termination Including a Short Circuit for Two Harmonics
    Yuki Takagi; Ryo Ishikawa; KazuhikoHonjo
    Oral presentation, Japanese, 2016 IEICE General Conference, Domestic conference
    15 Mar. 2016
  • A Duplexing Circuit for Concurrent Dual-Band Amplier Consisting of Two Amplifier Units
    Haruka Nishizawa; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2016 IEICE General Conference, Domestic conference
    15 Mar. 2016
  • Study on 900 MHz Band Class-F GaAs HEMT Recti er for Wide Dynamic Range Operation
    Misako Fujimaki; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2016 IEICE General Conference, Domestic conference
    15 Mar. 2016
  • Analysis on Broadband Characteristics for Planar Antenna with Consideration for High Order Modes
    Long Jin; Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report, Domestic conference
    17 Dec. 2015
  • High Precision Optimum Load Impedance Estimation of High-Efficiency Microwave Power Amplifier by Using Low Frequency Active Multi-Harmonic Load-Pull Systems
    Yao Tao; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report, Domestic conference
    17 Dec. 2015
  • Amplification/Rectification Switching Module for Microwave Wireless Power Transfer Systems
    Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report, Domestic conference
    19 Nov. 2015
  • High-efficiency power amplifier design considering nonlinear parasitic capacitance extracted from low frequency intrinsic transistor characteristics
    Tao Yo; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2015年電子情報通信学会エレクトロニクスソサイエティ大会, IEICE, Domestic conference
    09 Sep. 2015
  • Wide-band design technique for high-efficiency GaN HEMT power amplifier considering harmonic input/output circuits
    Jun Enomoto; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2015 IEICE Society Conference, IEICE, Domestic conference
    09 Sep. 2015
  • A novel high-isolation switch circuit having reconfigurable filtering characterisitics with a periodic structure
    Hiroshi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report, Domestic conference
    25 Jun. 2015
  • Design and evaluation for GaN-HEMT high-power high-efficiency power amplifier/rectifier
    Daisuke Mori; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report, IEICE, Domestic conference
    28 May 2015
  • Analysis of broadband characteristics for wide-angle radial planar antenna
    Akira Saitou; 金龍,Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report, Domestic conference
    28 May 2015
  • Transmission power control with pulse width modulation technique for WPT power amplifier/rectifier
    Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report, IEICE, Domestic conference
    16 Apr. 2015
  • Smart Wireless Module with a Dual Use Technology of Ultra-High EfficiencyMicrowave Power Amplifiers and Rectifiers
    Kazuhiko Honjo; Ryo Ishikawa
    Nominated symposium, Japanese, 2015 IEICE General Conference, Invited, IEICE, Domestic conference
    11 Mar. 2015
  • High-Power GaN HEMT Variable Phase Shifter MMIC
    Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2015 IEICE General Conference, IEICE, Domestic conference
    11 Mar. 2015
  • Angular dependency of characteristics of wideband planar sectorial antennas
    Jin Long; Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2015 IEICE General Conference, IEICE, Domestic conference
    11 Mar. 2015
  • Analysis on wideband characteristics for wide-angle planar sectorial antennas
    Akira Saitou; Shoichi Onodera; Jin Long; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2015 IEICE General Conference, IEICE, Domestic conference
    11 Mar. 2015
  • A 5.8-GHz Wilkinson Type Reconfigurable Power Divider
    Yusuke Ota; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report, IEICE, Tokyo, Domestic conference
    Dec. 2014
  • A Dual-Band High-Efficiency GaN HEMT Amplifier with Harmonic Reactive Terminations
    Jun Enomoto; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report, IEICE, Tokyo, Domestic conference
    Dec. 2014
  • Wide-band high-efficiency C-band GaAs p-HEMT Doherty amplifier MMIC without inpedance inverter
    Tsuyoshi Yoshida; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report, IEICE, AKITA, Domestic conference
    23 Oct. 2014
  • Analytical Study of Dualband Antennas Embedded with Elements inside the Antenna
    Shoichi Onodera; Ryo Ishikawa; Akira Saitou; Kazuhiko Honjo
    Oral presentation, Japanese, 2014 IEICE Society Conference, IEICE, Tokushima, Domestic conference
    25 Sep. 2014
  • High-Efficiency Amplifier Design Using a MHz-Band Multi-Harmoinc Active Load-Pull System Applicable for GaN Devices
    Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2014 IEICE Society Conference, IEICE, Tokushima, Domestic conference
    23 Sep. 2014
  • A Dual-Band High-Efficiency GaN HEMT Power Ampli er with Harmonic Reactive Terminations
    Jun Enomoto; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2014 IEICE Society Conference, IEICE, Tokushima, Domestic conference
    23 Sep. 2014
  • Compact Broadband High-Efficiency C-band GaAs pHEMT MMIC Doherty Amplifier
    Tsuyoshi Yoshida; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2014 IEICE Society Conference, IEICE, Tokushima, Domestic conference
    23 Sep. 2014
  • A 5.8-GHz Reconfigurable Power Divider for Variable-Focus Wireless Power Transfer System
    Yusuke Ohta; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2014 IEICE Society Conference, IEICE, Tokushima, Domestic conference
    23 Sep. 2014
  • High Efficiency GaN HEMT Rectifier for Wireless Power Transfer Systems
    Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2014 IEICE General Conference, IEICE, niigata, Domestic conference
    20 Mar. 2014
  • Analysis on Radiation Pattern Transfer for Sectorial Thin Antennas with Multipole Expansion
    Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2014 IEICE General Conference, IEICE, niigata, Domestic conference
    20 Mar. 2014
  • Experimental parameter extraction method for an equivalent multistage thermal RC ladder circuit used to a GaN HEMT large-signal model
    Shingo Yoshida; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2014 IEICE General Conference, IECE, niigata, Domestic conference
    18 Mar. 2014
  • Power Gain Characteristic of Independently Biased HBT Cascode Chip
    Duy Manh LUONG; Yoichiro TAKAYAMA; Ryo ISHIKAWA; Kazuhiko HONJO
    Oral presentation, English, 2014 IEICE General Conference, IEICE, niigata, Domestic conference
    18 Mar. 2014
  • A study of high-efficiency transmission-power control for wireless power and information transfer systems
    Daisuke Mori; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2014 IEICE General Conference, IEICE, niigata, Domestic conference
    18 Mar. 2014
  • A Basic Model of a Doherty Amplifier without a Quarter-Wave Inverting Network
    Yoichiro Takayama; Kazuhiko Honjo
    Oral presentation, Japanese, 2014 IEICE General Conference, Domestic conference
    18 Mar. 2014
  • C-band GaAs pHEMT MMIC Doherty Amplifier without Quarter Wave Inverter
    Tsuyoshi Yoshida; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2014 IEICE General Conference, IEICE, niigata, Domestic conference
    18 Mar. 2014
  • A 2.0-2.8 GHz-band High-Efficiency GaAs pHEMT Cascode Power Amplifier Consisting of Independently Biased Transistors
    Satoshi Tasaki; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2014 IEICE General Conference, IEICE, niigata, Domestic conference
    18 Mar. 2014
  • Frequency Characteristic of 2 GHz-Band 30W Class High Efficiency GaN HEMT Power Amplifier with Harmonics Reactive Termination
    Tomohiro Yao; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2014 IEICE General Conference, IEICE, niigata, Domestic conference
    18 Mar. 2014
  • Broadband balun using an asymmetric coupled-line
    Daiki Endo; Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2014 IEICE General Conference, IEICE, niigata, Domestic conference
    18 Mar. 2014
  • 5.8 GHz-Band Variable Beam-Focusing Gaussian Beam Array Antenna
    Taihei Inoue; Akira Saitou; Kazuhiko Honjo
    Oral presentation, Japanese, 2014 IEICE General Conference, IEICE, Niigata, Domestic conference
    18 Mar. 2014
  • A microwave module providing both amplification and rectification functions (Invited Talk)
    Kazuhiko Honjo; Ryo shikawa
    Invited oral presentation, Japanese, Microwave WPT Workshops, Microwave WPT Workshops, IEEE MTT-S Kansai Chapter
    Jan. 2014
  • Experimental parameter extraction method for an equivalent multistage thermal RC ladder circuit used to a GaN HEMT large-signal model
    Shingo Yoshida; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    Dec. 2013
  • High-efficiency GaN HEMT power amplifier with a harmonic reactive termination at 2-GHz band and an analysis of its frequency characteristic
    Tomohiro Yao; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    Dec. 2013
  • Compact Broadband Shunt-Connected Load Type GaN HEMT Doherty Amplifier without Quarter-Wave Impedance Inverting Network
    Yosuke Iguchi; oichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    Dec. 2013
  • Reconfigurable Dual-band Antenna Embedded with Varactors and Passive Elements
    Shoichi Onodera; Ryo Ishikawa; Akira Saitou; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    Dec. 2013
  • Broadband balun using an asymmetric coupled-line
    Daiki Endo; Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    Dec. 2013
  • High-Efficiency RF-DC Interconversion Transistor Circuit for Microwave Power Transfer Systems
    Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    Oct. 2013
  • Reconfigurable Dual-Band Antenna with Independently Controllable Frequencies
    Shoichi Onodera; Ryo Ishikawa; Akira Saitou; Kazuhiko Honjo
    Oral presentation, Japanese, 2013 IEICE Society Conference
    Sep. 2013
  • Basic investigation on characteristics including higher-order modes for pseudo-linear antennas
    Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2013 IEICE Society Conference
    Sep. 2013
  • Spatially Modulated Digital Communication Method Using FET-switches Controlling Array Factor
    Kohei Hasegawa; Ryo Ishikawa; Akira Saitou; Kazuhiko Honjo
    Oral presentation, Japanese, 2013 IEICE General Conference, Domestic conference
    Mar. 2013
  • A Study of a High Efficiency Module with Amplification and Rectification Functions for Wireless Power Transmission
    Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2013 IEICE General Conference
    Mar. 2013
  • 2.1 GHz-Band High Efficiency GaN HEMT Power Amplifier with Harmonics Reactive Termination
    Tomohiro Yao; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2013 IEICE General Conference
    Mar. 2013
  • A 1.2-2.0 GHz-band GaAs pHEMT Cascode Power Amplifier MMIC Consisting of Independently Biased Transistors
    Satoshi Tasaki; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2013 IEICE General Conference
    Mar. 2013
  • Basic study on multi-band reconfigurable antenna using embedded lumped elements
    Shoichi Onodera; Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2013 IEICE General Conference
    Mar. 2013
  • Compact Broadband Shunt-Connected Load Type GaN HEMT Doherty Amplifier without Quarter-Wave Impedance Inverting Network
    Yosuke Iguchi; Yoichiro Takayama Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2013 IEICE General Conference, Domestic conference
    Mar. 2013
  • High-efficiency transistor harmonic load design technique using MHz-band active load pull
    Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
    Oral presentation, Japanese, IEEJ Electron Device Research Meeting
    Mar. 2013
  • 2012 European Microwave Conference Report
    K.Kawai; K.Honjo; R.Pokharel; F.Kuroki; C. Chunping; H.Kamoda
    Oral presentation, Japanese, IEICE Technical Report
    Mar. 2013
  • A 1.2-2.0 GHz-band GaAs pHEMT Cascode Power Amplifier MMIC Consisting of Independently Biased Transistors
    Satoshi Tasaki; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    Dec. 2012
  • Design Method for GHz-Band Harmonics Treatment High Efficiency Power Amplifiers Using MHz-Band Active Harmonics Load-Pull System
    Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    Nov. 2012
  • Proposals of compact broadband microwave Doherty amplifiers with generalized output-combining condition
    Yoichiro Takayama; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    Nov. 2012
  • Spatial Modulation Method Using Scatterers Embedded with FET-Switches
    Kohei Hasegawa; Ryo Ishikawa; Akira Saitou; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    Nov. 2012
  • A Broadband Doherty Power Amplifier without a Quarter-Wave Impedance Inverting Network
    Shintaro Watanabe; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    Oct. 2012
  • High-efficiency low-distortion independently-biased InGaP/GaAs HBT power amplifier
    Yuki Takagi; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    Oct. 2012
  • Space modulation technique using a 5.8-GHz WPT module with microstrip array antennas and two scatters
    Taihei Inoue; Kohei Hasegawa; Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    Oct. 2012
  • A 1.9GHz Cascode Power Amplifier MMIC Consisting of Independently Biased InGaP/GaAs HBTs
    Yuki Takagi; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2012 IEICE Society Conference
    Sep. 2012
  • GHz-Band High Efficiency Power Amplifier Design Based on MHz-Band Active Harmonics Load-Pull Evaluation
    Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
    Oral presentation, Japanese, 2012 IEICE Society Conference, Domestic conference
    Sep. 2012
  • Proposals for Microwave Doherty Amplifiers with Generalized Output-Combining Condition
    Yoichiro Takayama; Kazuhiko Honjo
    Oral presentation, Japanese, 2012 IEICE Society Conference, Domestic conference
    Sep. 2012
  • Analysis with circuit theory on a broadband balun consisting of an asymmetric coupled line
    Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2012 IEICE Society Conference, Domestic conference
    Sep. 2012
  • Spatial Modulation Module Consisting of a Microstrip Array Antenna and Dual Scatterers forWireless Power Transmission
    Taihei Inoue; Kohei Hasegawa; Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2012 IEICE Society Conference
    Sep. 2012
  • Modulation Rate on Spatial Modulation Using Varactor-Loaded Dual-Scatterers
    Kohei Hasegawa; Ryo Ishikawa; Akira Saitou; Kazuhiko Honjo
    Oral presentation, Japanese, 2012 IEICE Society Conference
    Sep. 2012
  • GaN HEMT Doherty Amplifier without Quarter Wave Impedance Transformer
    Shintaro Watanabe; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2012 IEICE Society Conference, Domestic conference
    Sep. 2012
  • Compact Double Stubs Resonators with Inter-digital Capacitor Loading in MMIC Technology
    Takao Katayose; Shinichi Tanaka; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2012 IEICE Society Conference, Domestic conference
    Sep. 2012
  • Evaluation of Parasitic Compensated Lumped-Element Circuit Inverse Class-F GaN HEMT Amplifier Using Comparing Factorization
    Osamu Miura; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2012 IEICE General Conference
    Mar. 2012
  • A Experimental Veri cation of Spatial Modulation with 2 Re ectors using Varactors
    Kohei Hasegawa; Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2012 IEICE General Conference, Domestic conference
    Mar. 2012
  • Investigation on spatial modulation wireless communication using double scattering elements
    Akira Saitou; Kohei Hasegawa; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2012 IEICE General Conference
    Mar. 2012
  • New Compact Topology Doherty Amplifiers without Quarter–Wave Impedance Transformer
    Yoichiro Takayama; Kazuhiko Honjo
    Oral presentation, Japanese, 2012 IEICE General Conference
    Mar. 2012
  • Importance of classical linear circuit theory in advanced nonlinear power amplifier design
    Kazuhiko Honjo
    Invited oral presentation, Japanese, 2nd Open Resrach Seminor (Analog circuit theory using only a paper and a pencil), URSI-C Committee
    Feb. 2012
  • Distortion Analysis of HBT Ampli er Applying RC-Ladder Thermal Memory Effect Compensation Circuit, and Parameter Determination Method of the Circuit
    Ryo ISHIKAWAy; Junichi KIMURAy; Kazuhiko HONJO
    Oral presentation, Japanese, IEICE Technical Report
    Nov. 2011
  • High Efficiency, Low Distortion GaN HEMT Cascode Power Amplifier Consisting of Independently Biased Transistors
    Ryo ISHIKAWAy; Junichi KIMURAy; Kazuhiko HONJO
    Oral presentation, Japanese, IEICE Technical Report
    Nov. 2011
  • A Cascode Power Amplifier MMIC Consisting of Independently Biased InGaP/GaAs HBTs
    Yuki Takagi; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    Oct. 2011
  • Wireless Communication System using Side Lobe of Microwave Wireless Power Transmission
    Kohei HASEGAWA Yuuya; HOSHINO Ryo; ISHIKAWA Akira SAITOU; Kazuhiko HONJO
    Oral presentation, Japanese, IEICE Technical Report
    Oct. 2011
  • Experimental Verification of C-Band High-Efficiency AlGaN/GaN HEMT Power Amplifier by Controlling Phase Angles of Harmonics
    Masahiro Kamiyama, Ryo Ishikawa, Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    Oct. 2011
  • High-Efficiency, Low-Distortion Microwave Power Amplifier Design Considering Higher Harmonic Frequencies
    Kazuhiko Honjo; Ryo Ishikawa; Yoichiro Takayama
    Oral presentation, Japanese, IEICE Technical Report, Invited
    Oct. 2011
  • C-band High Efficiency AlGaN/GaN HEMT Power Amplifier by Controlling Phase Angle of Harmonics
    Masahiro Kamiyama; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2011 IEICE Society Conference
    Sep. 2011
  • High Efficiency and Low Distortion GaN HEMT Cascode Amplifier Consisting of Independently Biased Transistors
    Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
    Oral presentation, Japanese, 2011 IEICE Society Conference
    Sep. 2011
  • Analytic Parameter Determination Method for RC-ladder Thermal Memory Effect Compensation Circuit in HBT Amplifier
    Ryo Ishikawa Junichi Kimura; Kazuhiko Honjo
    Oral presentation, Japanese, 2011 IEICE Society Conference
    Sep. 2011
  • Modulation Indices for Spatial Modulation Controlling Array Factor
    Kohei Hasegawa; Yuuya Hoshino; Ryo Ishikawa; Akira Saitou; Kazuhiko Honjo
    Oral presentation, Japanese, 2011 IEICE Society Conference
    Sep. 2011
  • Miniaturized Broadband Fractal Antenna Combined with Self-Complementary Principle for UWB Applications
    Vasil DIMITROV; Akira SAITOU; Kazuhiko HONJO
    Oral presentation, English, 2011 IEICE Society Conference
    Sep. 2011
  • Investigation on improvement of modulation index for Spatial Modulation using array factor control
    Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2011 IEICE Society Conference
    Sep. 2011
  • Basic study on Space Modulation Wireless Transmission
    Yuuya Hoshino; Ryo Ishikawa; Akira Saitou; Kazuhiko Honjo
    Oral presentation, Japanese, 2011 IEICE General Conference
    Mar. 2011
  • Novel Class-F and Inverse Class-F Load Circuits with Compensation of Transistor Parasitic Elements
    Osamu Miura; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2011 IEICE General Conference
    Mar. 2011
  • Basic study of radiation pattern control with frequency selectivity reflector for dual-band antennas
    Tatsuhiko Iwakuni; Akira Saitou; Kazuhiko Honjo
    Oral presentation, Japanese, 2011 IEICE General Conference
    Mar. 2011
  • Miniaturized cross-dipole CP antennas with axial ratio controlled by embedded lumped elements
    Akira Saitou; Yuki Murayama; Yutaka Aoki; Kazuhiko Honjo
    Oral presentation, Japanese, 2011 IEICE General Conference
    Mar. 2011
  • Experimental Consideration of Cascode Amplifier Consisting of Independently Biased InGaP/GaAs HBTs
    Yuki Takagi; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2011 IEICE General Conference
    Mar. 2011
  • A Technology Perspective on Active Microwave Circuits (Keynote Address)
    Kazuhiko Honjo
    Keynote oral presentation, English, 2010 Asia Pacific Microwave Conference, 2010 Asia Pacific Microwave Conference (IEICE, IEEE), Yokohama, Japan, International conference
    Dec. 2010
  • Development of Impulse UWB T/R MMICs
    Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEE Japan
    Nov. 2010
  • Fundamentals of GaN-HEMT power amplifiers for use in microwave WPT (Invited Talk)
    Kazuhiko Honjo; Ryo Ishikawa; Yoichiro Takayama
    Invited oral presentation, Japanese, 13th SPS (Solar Power Satelite) Symposium, 13th SPS Symposium
    Oct. 2010
  • Basic study on antennas for cellular phone using unbalanced dual-band antenna technology
    Yutaka Aoki; Shigeru Yagi Akira Saito; Kazuhiko Honjo
    Oral presentation, Japanese, 2009 IEICE Society Conference
    Sep. 2010
  • Radiation pattern control for feeding point switching asymmetrically fed antenna
    Yuuya Hoshino Akira Saitou; Kazuhiko Honjo
    Oral presentation, Japanese, 2010 IEICE Society Conference
    Sep. 2010
  • Experimental Verification of Cascode Amplifier Consisting of Independently Biased Transistors
    Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
    Oral presentation, Japanese, 2010 IEICE Society Conference
    Sep. 2010
  • Third-Order Intermodulation Distortion Analysis of Cascode Power Amplifiers Consisting of Independently Biased Transistors
    Yoichiro Takayama; Kazuhiko Honjo
    Oral presentation, Japanese, 2010 IEICE Society Conference
    Sep. 2010
  • Evaluation of GaN HEMT with 5.8 GHz Miniature Class-F Load Circuit
    Ryo Ishikawa; Masahiro Kamiyama Kenta Kuroda; Kazuhiko Honjo
    Oral presentation, Japanese, 2010 IEICE Society Conference
    Sep. 2010
  • Low distortion technique for series-connected-load GaN-HEMT Doherty power amplifier
    Satoshi Kawai, Yoichiro Takayama, Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    Sep. 2010
  • Adaptive control of antenna radiation pattern with varacter-loaded frequency-selective scatters
    Yuya Hoshino, Akira Saitou, Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    Sep. 2010
  • Improvement on UWB Active Balun Using Negative Group Delay Circuits
    Kyoung-Pyo Ahn; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2010 IEICE General Conference
    Mar. 2010
  • Automatic Bias Control Diode Linearizer for a Class-F GaN HEMT Power Amplifier
    Akihiro Ando; Yoichiro Takayama; Tsuyoshi Yoshida; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2010 IEICE General Conference
    Mar. 2010
  • Directivity adaptive control of monopole antenna with varactor loadings reflector
    Yuuya Hoshino Akira Saitou; Kazuhiko Honjo
    Oral presentation, Japanese, 2010 IEICE General Conference
    Mar. 2010
  • Evaluation od Differential Impulse Detection MMIC for UWB-IR
    Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2010 IEICE General Conference
    Mar. 2010
  • Improvement of IMD3 for Microwave GaN HEMT Doherty Power Amplifier with a Series Connected Load
    Satoshi Kawai, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo
    Oral presentation, Japanese, 2010 IEICE General Conference
    Mar. 2010
  • Parasitic Compensated 5.8 GHz Class-F High Efficiency Amplifier
    Kenta Kuroda; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2010 IEICE General Conference
    Mar. 2010
  • Basic study on pattern orthogonality of dual-band differential-mode antennas for MIMO applications
    Akira Saitou; Yutaka Aoki; Yuuya Hoshino; Kazuhiko Honjo
    Oral presentation, Japanese, 2010 IEICE General Conference
    Mar. 2010
  • An Internal Harmonic Network for a Microwave High Power GaN HEMT
    Tsuyoshi Yoshida; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2010 IEICE General Conference
    Mar. 2010
  • Compensation for Class-F GaN HEMT Power Amplifier Using Automatic Bias Control Diode Linearizer
    Akihiro Ando; Yoichiro Takayama; Tsuyoshi Yoshida; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, Technical Report of IEEJ
    Mar. 2010
  • Class-F Load Cirucit Design Method Taking Account of Parasitic Elements and Applying to GaN HEMT
    Kenta Kuroda; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, Technical Report of IEEJ
    Mar. 2010
  • Independently-biased Cascode power amplifier and its high-efficiency/low-distortion design
    Yoichiro Takayama, Kazuhiko Honjo
    Oral presentation, Japanese, Technical Report of IEICE
    Sep. 2009
  • Design and Fabrication for a GaN HEMT Microwave Doherty Power Amplifier with a Series Connected Load
    Satoshi Kawai; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, Technical Report of IEICE
    Sep. 2009
  • Basic study on improvement of pattern orthogonality for MIMO two-band antenna
    Akira Saitou, Yuya Hoshino, Yutaka Aoki, Kazuhiko Honjo
    Oral presentation, Japanese, IEICE technical report
    Sep. 2009
  • A Cascode Power Amplifier Consisting of Independently Biased Transistors and Its Design for Improved Efficiency and Distortion
    Yoichiro Takayama; Kazuhiko Honjo
    Oral presentation, Japanese, 2009 IEICE Society Conference
    Sep. 2009
  • Basic study on the directive change by the variable lossless load of EBG
    Yuuya Hoshino; Akira Saitou; Yutaka Aoki; Kazuhiko Honjo
    Oral presentation, Japanese, 2009 IEICE Society Conference
    Sep. 2009
  • A Linearizer Using Two Independently Controlled Diodes for a Class-F GaN HEMT Power Amplifier
    Akihiro Ando; Yoichiro Takayama; Tsuyoshi Yoshida; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2009 IEICE Society Conference
    Sep. 2009
  • A GaN HEMT Microwave Doherty Amplifier with a Series Connected Load
    Satoshi Kawai; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2009 IEICE Society Conference
    Sep. 2009
  • Group Delay Compensation of UWB HBT MMIC Amplifier for Low Noise Characteristics
    Kyoung-Pyo Ahn; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2009 IEICE Society Conference
    Sep. 2009
  • Analysis of Group Delay Characteristics for an HBT Distributed Amplifier
    Ryo Ishikawa; Kyoung-Pyo Ahn; Masao Shimada; Kazuhiko Honjo
    Oral presentation, Japanese, 2009 IEICE Society Conference
    Sep. 2009
  • Compensation Method of Intermodulation Distortion by Thermal Memory Effect for Microwave Power Amplifiers
    J.Kimura; R.Ishikawa; Y.Takahashi; K.Honjo
    Oral presentation, Japanese, Technical Report of IEICE
    Jun. 2009
  • Negative Group Delay Circuits using RC Network Configuration
    Kyoung-pyo Ahn; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2009 IEICE General Conference
    Mar. 2009
  • Group Delay Compensation using NGD Circuit for UWB HBT MMIC Amplifier
    Kyoung-pyo Ahn; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2009 IEICE General Conference
    Mar. 2009
  • Impulse Generation MMIC and Signal Reconstruction Circuit for UWB System
    Ryo Ishikawa; Yoonseok Oh; Kazuhiko Honjo
    Oral presentation, Japanese, 2009 IEICE General Conference
    Mar. 2009
  • Experimental Verification of Compensation for IMD3 Caused by Thermal Memory Effect in HBT Power Amplifier
    Junichi Kimura; Ryo Ishikawa; Yukio Takahashi; Kazuhiko Honjo
    Oral presentation, Japanese, 2009 IEICE General Conference
    Mar. 2009
  • Basic study on improvement of isolation between dual-band MIMO antennas using PBG element
    Akira Saitou; Shotaro Ozawa; Kazuhiko Honjo; Kouji Takahashi
    Oral presentation, Japanese, 2009 IEICE General Conference
    Mar. 2009
  • Perspectives for Global Simulation Techniques Including EM-Semiconductor-Heat and Circuit
    Kazuhiko Honjo; Ryo Ishikawa
    Invited oral presentation, Japanese, Proceedings of 2009 IEICE General Conference, 2009 IEICE General Conference
    Mar. 2009
  • Characteristic and Compensation of Group Delay for UWB Wideband Amplifier using NGD Circuits
    Kyoung-Pyo Ahn; Ishikawa Ryo; Kazuhiko Honjo
    Oral presentation, Japanese, Technical Report of IEEJ
    Mar. 2009
  • A High-Efficiency Class-F GaN HEMT Power Amplifier with a Diode Predistortion Linearizer
    Akihiro ANDO; Yoichiro TAKAYAMA; Tsuyoshi YOSHIDA; Ryo ISHIKAWA; Kazuhiko HONJO
    Oral presentation, Japanese, IEICE Technical Report
    Jan. 2009
  • Two-Terminal Device Network Analysis of Transistor Oscillators
    Yoichiro Takayama; Kazuhiko Honjo
    Oral presentation, Japanese, 2008 IEICE Society Conference
    Sep. 2008
  • Lumped Circuit GaN HEMT Inverse Class-F Amplifier Treated Up to 4th Order Harmonics
    Ryo Ishikawa; Yasuyuki Abe; Kazuhiko Honjo
    Oral presentation, Japanese, 2008 IEICE Society Conference
    Sep. 2008
  • A High Efficiency Class-F GaN HEMT Power Amplifier with a Diode Linearizer
    Akihiro Ando; Yoichiro Takayama; Tsuyoshi Yoshida; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2008 IEICE Society Conference
    Sep. 2008
  • A Study of Dual Band Film Antennas Using Trap Coil
    Shigeru Yagi; Yutaka Aoki; Kazuhiko Honjo
    Oral presentation, Japanese, 2008 IEICE Society Conference
    Sep. 2008
  • Large-signal differential mode evaluation for UWB MMIC
    Ryo Ishikawa; Kazuhiko Honjo; Hirobumi Inoue
    Oral presentation, Japanese, IEICE Technical Report (Silicon Analog Research Group)
    Sep. 2008
  • Novel inductor evaluation technique in impedance matching condition
    Shoichi Shimizu; Yutaka Aoki; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report (Silicon Analog Research Group), IEICE
    Sep. 2008
  • A Design and Fabrication of 5.8 GHz Class-F Amplifier using GaN HEMT
    Kenta Kuroda; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    Aug. 2008
  • Microwave Inverse Class-F GaN HEMT Amplifier using Harmonic Treatment Circuit Constructed with Lumped Circuit Elements
    Ryo Ishikawa; Yasuyuki Abe; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report (Microwave Research Group)
    Aug. 2008
  • 5.8GHz-band class-F GaNHEMT high-efficiency power amplifier for SSPS
    Ryo Ishikawa; Kenta Kuroda; Kazuhiko Honjo; Kunio Tsuda; Yasumasa Hisada
    Oral presentation, Japanese, IEICE Technical Report (SSPS Research Group)
    Jul. 2008
  • A Doherty Power Amplifier with a Series Connected Load
    Yoichiro Takayama; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report (MW2008-9), IEICE
    Apr. 2008
  • Multi-Stage Inductively Coupled Combline Bandpass Filters Using Low Permittivity PCB for UWB Applications
    Chuan Dong Zhao; Akira Saitou; Kazuhiko Honjo; Kouji Takahashi
    Oral presentation, Japanese, 2008 IEICE General Conference
    Mar. 2008
  • Inductance Definition and Evaluation for Inductor
    Shoichi Shimizu; Yutaka Aoki; Kazuhiko Honjo
    Oral presentation, Japanese, 2008 IEICE General Conference
    Mar. 2008
  • Wideband Characteristic of Orthogonal Dipole Plane Antenna with Phase Line
    Kazuhiro Aoki; Akira Saito; Kazuhiko Honjo
    Oral presentation, Japanese, 2008 IEICE General Conference
    Mar. 2008
  • Self-Complementary Array Antenna for UWB Applications
    Kenji Hiruta; Akira Saitou; Kazuhiko Honjo
    Oral presentation, Japanese, 2008 IEICE General Conference
    Mar. 2008
  • Miniaturized Ultra-Wideband Self-Complementary Antennas Using Shunted Spiral Inductors
    Yuji Ohashi; Akira Saitou; Kazuhiko Honjo; Kouji Takahashi
    Oral presentation, Japanese, 2008 IEICE General Conference
    Mar. 2008
  • A Microwave Doherty Amplifier with a Series Connected Load
    Yoichiro Takayama; Kazuhiko Honjo
    Oral presentation, Japanese, 2008 IEICE General Conference
    Mar. 2008
  • IMD3 Asymmetry Compensation for HBT Power Amplifiers by Controlling a Low Frequency Impedance Characteristic
    Yukio Takahashi; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2008 IEICE General Conference
    Mar. 2008
  • Applying Multi-Stage Thermal RC-Ladder Network to Multi-Cell HBT and IMD Analysis
    Nobuo Suga; Yukio Takahashi; Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
    Oral presentation, Japanese, 2008 IEICE General Conference
    Mar. 2008
  • 5.8 GHz Class-F High Efficiency Amplifier with GaN HEMT
    Kenta Kuroda; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2008 IEICE General Conference
    Mar. 2008
  • Equivalent Circuit for InP CPW with Under-Bridge up to 50 GHz
    Gang Liu; Hiroshi Nakano; Kazuhiko Honjo
    Oral presentation, English, 2007 IEICE Society Conference
    Sep. 2007
  • Efficiency Improvement of Single-mode Meander Line Antennas by Two-Layer Via Connection Structures
    Ryota Mizutani; Akira Saitou; Kazuhiko Honjo
    Oral presentation, Japanese, 2007 IEICE Society Conference
    Sep. 2007
  • Symmetric WLP Clip Inductors
    Shoichi Shimizu; Yutaka Aoki; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report, Domestic conference
    Sep. 2007
  • Ultra-low Power Consumption InGaP/GaAs HBT Low Noise Amplifier for UWB
    Takuya Abe; Masao Shimada; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2007 IEICE General Conference
    Mar. 2007
  • Miniaturization of Self-Complementary Antennas Using High-Permittivity Substrate for UWB Applications
    Kazuhiro Aoki; Akira Saito; Kazuhiko Honjo
    Oral presentation, Japanese, 2007 IEICE General Conference
    Mar. 2007
  • Summarization of WLP Clip Inductor and Matching Q-Factor definition
    Yutaka Aoki; Kazuhiko Honjo
    Oral presentation, Japanese, 2007 IEICE General Conference
    Mar. 2007
  • Design Method for Finger Length of GaN HEMT by using FDTD-Device Co-simulation
    Akira CHOKKI; Yasuta SHINOHARA; Ryo ISHIKAWA; Kazuhiko HONJO
    Oral presentation, Japanese, 2007 IEICE General Conference
    Mar. 2007
  • Co-Simulation Between Electromagnetic Field and Semiconductor Device Simulators for Fully Analyzing Modules with Active Devices
    Ryo Ishikawa; Kazuhiko Honjo; Masayuki Nakajima
    Oral presentation, Japanese, 2007 IEICE General Conference
    Mar. 2007
  • A Possible Load Circuit Treated up to Nth-Harmonics for Inverse Class-F Amplifier
    Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2007 IEICE General Conference
    Mar. 2007
  • An Experimental Study on Group Delay Compensation MMIC for UWB MMIC Using Composite Right/Left-Handed Circuit
    Kenji Murase; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2007 IEICE General Conference
    Mar. 2007
  • Self-Complementary Loop Antennas Fabricated on Low-Loss Liquid Crystal Polymer
    Akira Saitou; Kazuhiko Honjo; Chunhu Quan; Shiro Katagiri; Satoshi Okamoto
    Oral presentation, Japanese, 2007 IEICE General Conference
    Mar. 2007
  • Symmetrization of Microwave WLP Clip Inductor
    Shoichi Shimizu; Yutaka Aoki; Kazuhiko Honjo
    Oral presentation, Japanese, 2007 IEICE General Conference
    Mar. 2007
  • GaNHEMT Class-F Amplifier Operating at 1.9GHz
    Cong Zheng; Tsuyoshi Yoshida; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2007 IEICE General Conference
    Mar. 2007
  • Miniaturized Self-Complementary Antennas on High Permittivity Resin Substrate
    Akira Saitou; Kazuhiro Aoki; Kazuhiko Honjo; Chunhu Quan; Koichi Watanabe
    Oral presentation, Japanese, Technical Report of IEEJ
    Mar. 2007
  • Analysis of Amplifier Module With Surface Wave Mode Transmission Line By Using Electromagnetic Field Semiconductor Device Co-Simulation Technique
    Ryo Ishikawa; Kazuhiko Honjo; Masayuki Nakajima
    Oral presentation, Japanese, Technical Report of IEEJ
    Mar. 2007
  • Fabrication and evaluation of GaN semiconductor device for SSPS
    Kenji Takada; Kunio Tsuda; Ryo Ishikawa; Kazuhiko Honjo; Yasumasa Hisada
    Oral presentation, Japanese, IEICE Technical Report (SSPS Research Group)
    Mar. 2007
  • Microwave Circuits Embedded in Printed Circuit Boards
    Akira Saitou; Chuan Dong Zhao; Kazuhiko Honjo; Chunhu Quan; Koichi Watanabe
    Oral presentation, Japanese, JIEP
    Feb. 2007
  • Long-Finger HBT Analysis Based on Device and EM Co-Simulation Using FDTD Method
    Yasuta Shinohara; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    Sep. 2006
  • Group Delay Compensation for UWB MMIC Amplifier Based on a Composite Right/Left-Handed Circuit
    Kenji Murase; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    Sep. 2006
  • Modeling of Self Heating Effect and Related Distortion for Power Amplifier Using a Multi-Stage Thermal RC-Ladder Network
    Yukio Takahashi; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    Sep. 2006
  • Self-complementary Antennas Integrated with Abrupt Transition Differential-mode BPFs
    Akira Saitou; Kyoung-Pyo Ahn; Kazuhiko Honjo; Kouichi Watanabe
    Oral presentation, Japanese, 2006 IEICE General Conference
    Mar. 2006
  • Miniaturized Broadside Coupling Combline Bandpass Filter with High Permittivity PCB
    Chuan Dong Zhao; Akira Saitou; Kazuhiko Honjo; Koichi Watanabe
    Oral presentation, Japanese, 2006 IEICE General Conference
    Mar. 2006
  • Group Delay Compensation for UWB Devices Using Composite Right/Left-Handed Transmission Line
    Kenji Murase; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2006 IEICE General Conference
    Mar. 2006
  • Device Simulation for HBT with a Long-Finger Structure Using the FDTD Method
    Yasuta Shinohara; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, 2006 IEICE General Conference
    Mar. 2006
  • Inter Modulation Distortion Analysis by Multi-Stage CR Thermal Equivalent Circuit for High-Power HBT
    Yukio Takahashi; Ryo Ishikawa; Koichi Kimura; Kazuhiko Honjo
    Oral presentation, Japanese, 2006 IEICE General Conference
    Mar. 2006
  • Backward Graded Collector Structure to Linearize Collector Capacitance of HBTs and Deviation of a Minimum Condition for 3rd Order Inter Modulation Distortion
    Cong Zheng; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, Technical Report of IEEJ
    Mar. 2006
  • A Proposal of GHz High-Speed Signal Analysis Method on BGA Packages
    H.Inoue; D.Oshima; J.Sakai; R.Ishikawa; K.Honjo
    Oral presentation, Japanese, Japan Institute of Electronics Packaging
    Mar. 2006
  • Novel Band Pass Filter Design with Broad Band Characteristics Using Broadside Four-Coupled Line
    Hajime Aoki; Akira Saitou; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    Dec. 2005
  • A Proposal of OSE method for chip-package-board integration design
    H.Inoue; D.Oshima; M.Furuya; J.Sakai; K.Honjo
    Oral presentation, Japanese, Proceedings of 2004 IEICE Society Conference
    Sep. 2005
  • A Simple Equivalent Circuit Modeling by OSE method for High-Density Packaging
    R.Ishikawa; K.Honjo; N.Imai; H.Inoue
    Oral presentation, Japanese, Proceedings of 2004 IEICE Society Conference
    Sep. 2005
  • A simple equivalent circuit modeling of high-speed and high-density semiconductor package including discontinuous interconnections using OSE method
    H.Inoue; D.Oshima; M.Furuya; J.Sakai; K.Honjo
    Oral presentation, Japanese, Proceedings of 2004 IEICE Society Conference
    Sep. 2005
  • Transmission Characteristics Affected by Capacitances between a Line and Vias on OSE Method
    R.Ishikawa; K. Honjo; N. Imai; H. Inoue
    Oral presentation, Japanese, Proceedings of 2004 IEICE Society Conference
    Sep. 2005
  • Group Delay of MMIC Amplifier with Active Balun, Filter and Self-Complimentary Antenna
    Kyoungpyo Ahn; Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, Proceedings of 2004 IEICE Society Conference
    Sep. 2005
  • Wideband InGaP / GaAs HBT MMIC Amplifier with Active Balun for Self-Complementary Ultra-Wideband Antenna
    Itaru Nakagawa; Masao Shimada; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, Proceedings of 2004 IEICE Society Conference
    Sep. 2005
  • InGaP/GaAs HBT Amplifier with Active Balun for Ultra-Wideband Self-Complementary Antenna
    Itaru Nakagawa; Masao Shimada; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    Sep. 2005
  • Backward Graded Collector Structure to Improve Inter-Modulation Distortion of HBTs
    Cong Zheng; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, Proceedings of the 2005 IEICE General Conference, Domestic conference
    Mar. 2005
  • A relationship between order of higher harmonic frequency and power added efficiency for InGaP/GaAs HBT class-F power amplifier
    Masato Seki; Ryo Ishikawa; Kazuhiko Honjo
    Oral presentation, Japanese, Proceedings of the 2004 IEICE General Conference
    Mar. 2005
  • Dual Band Antenna Using Differential Mode 4-Coupled Line Duplexer
    Nobuaki Satomi; Akira Saitou; Kazuhiko Honjo
    Oral presentation, Japanese, Proceedings of the 2004 IEICE General Conference, Domestic conference
    Mar. 2005
  • Four-Coupled Line Differential Mode Band Pass Filters for UWB Antenna Applications
    Hajime Aoki; Nobuaki Satomi; Akira Saitou; Kazuhiko Honjo
    Oral presentation, Japanese, Proceedings of the 2004 IEICE General Conference, Domestic conference
    Mar. 2005
  • Influence on the Image Quality by the Needle Pillar Spacer Used for FEDs or Thin-CRT
    Kinzo Nonomura; Kazuhiko Honjo
    Oral presentation, Japanese, Proceedings of the 2004 IEICE General Conference, Domestic conference
    Mar. 2005
  • Electrical Approach for the Jisso Technology
    Yasushi Ito; Kazuhiko Honjo; Masayoshi Aikawa
    Oral presentation, Japanese, Proceedings of the 2004 IEICE General Conference, Domestic conference
    Mar. 2005
  • Device Characterization and Optimization Considering Harmonic and Sub-harmonic Frequencies
    Kazuhiko Honjo
    Invited oral presentation, Japanese, IEICE 3rd Research Meeting on Silicon Analog RF Circuit, IEICE 3rd Research Meeting on Silicon Analog RF Circuit
    Jan. 2005
  • Wireless Devices and Circuit Technology Considering High Power Efficiency, Low Distortion, and Ultra Wideband(Keynote Address)
    Kazuhiko Honjo
    Keynote oral presentation, English, 2004 Microwave and Millimeterwave Workshop, 2004 Microwave and Millimeterwave Workshop(IEEE MTT/AP Korea Chapter), Seoul, Korea, International conference
    Oct. 2004
  • Relationship Btween ACLR Asymmetries and Bias Circuit Frequency Characteristics for a W-CDMA InGaP/GaAs HBT Power Amplifier
    Koichi Kimura; Nobuhisa Matsumura; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report(MW2004-124)
    Sep. 2004
  • A Novel Q Factor Definition for Microwave Passive Element Under Impedance Matching Condition
    Yutaka Aoki; Kazuhiko Honjo
    Oral presentation, Japanese, Proceedings of 2004 IEICE Society Conference
    Sep. 2004
  • Basic Study of Blanced-Mode 4 Coupled-Line Bandpass filters for UWB Applications
    A. Saitou; H.Aoki; N.Satomi; K.Honjo; K.Sato; T.Koyama
    Oral presentation, Japanese, Proceedings of 2004 IEICE Society Conference
    Sep. 2004
  • Experimental study on Class-F HBT power amplifier operating at 1.9 GHz
    Masato Seki; Yukiko Kobayashi; Hiroko Ishii; Kazuhiko Honjo
    Others, Japanese, 6th YRP Mobile Communication Symposium 2004
    Jul. 2004
  • Characteristics of Quasi-Self-Complementary Antennas on Low-Loss Resin Substrate for UWB Applications
    Akira Saitou; Takanori Iwaki; Kazuhiko Honjo
    Others, Japanese, 6th YRP Mobile Communication Symposium 2004
    Jul. 2004
  • CIrcuit technology for high-frequency device
    Kazuhiko Honjo
    Others, Japanese, Compound semiconductor (Next generation IT salon report)
    Apr. 2004
  • Experimental Study for Class-F HBT Amplifier Operating at 1.9 GHz
    Masato Seki; Yukiko Kobayashi; Hiroko Ishii; Kazuhiko Honjo
    Oral presentation, Japanese, Proceedings of the 2004 IEICE General Conference
    Mar. 2004
  • Improvement in Asymmetric ACLR for W-CDMA InGaP/GaAs HBT Power Amplifier
    Koichi Kimura; Nobuhisa Matsumura; Kazuhiko Honjo
    Oral presentation, Japanese, Proceedings of the 2004 IEICE General Conference
    Mar. 2004
  • Class-F Amplifier Circuit Design Using Lumped Element Inductors ans\d Capacitors
    Kiyoshi Aikawa; Kazuhiko Honjo
    Oral presentation, Japanese, Proceedings of the 2004 IEICE General Conference
    Mar. 2004
  • Miniaturiztion of Self-Complementary Antennas on Resin Printed Circuit Board for UWB Applications
    A.Saitou; T.Iwaki; K.Honjo; K.Sato; T.Koyama; K.Watanabe
    Oral presentation, Japanese, Proceedings of the 2004 IEICE General Conference
    Mar. 2004
  • Characteristics of miniaturized UWB anttenna with balanced-mode impedance matching circuit
    Takanori Iwaki; Akira Saitou; Kazuhiko Honjo
    Oral presentation, Japanese, Proceedings of the 2004 IEICE General Conference
    Mar. 2004
  • Characteristics od Quasi-Self-Complementary Antennas on Low-Loss Resin Substrate
    Akira Saitou; Takanori Iwaki; Kazuhiko Honjo
    Oral presentation, Japanese, Electron Device Research Meeting, IEEJ
    Mar. 2004
  • Class-F Amplifier Circuit Design Using lumped-Element Inductors and Capacitors
    Kiyoshi Aikawa; kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    Jan. 2004
  • Intermodulation distortion characteristics in class-F amplifier
    Masato Seki; Akie Kawai; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report
    Sep. 2003
  • Basic consideration for variable bandwidth filters using resin printed circuit board
    Norio Imai; Kazuhiko Honjo; Akira Saitou
    Oral presentation, Japanese, IEICE Technical Report(MW2003-138)
    Sep. 2003
  • Design of multiple coupled-line microwave circuits utilizing device simulator
    Akira Saitou; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE 8th Microwave Simulator Workshop Digest
    Sep. 2003
  • Design of multiple coupled-line microwave circuits utilizing device simulator
    Akira Saitou; Kazuhiko Honjo
    Invited oral presentation, Japanese, IEICE 8th Microwave Simulator Workshop, Invited, IEICE 8th Microwave Simulator Workshop Digest, Domestic conference
    Sep. 2003
  • Advaced Seminar using microwave CAD ( A new trend for seminars in universities for professional engineers )
    Kazuhiko Honjo
    Invited oral presentation, Japanese, IEICE 8th Microwave Simulator Workshop, IEICE 8th Microwave Simulator Workshop Digest
    Sep. 2003
  • Temperature characteristics and reliability for microwave passive circuit embedded resin printed circuit board
    Kotaki, Saitou; Sato, Koyama; Watababe, Honjo
    Oral presentation, Japanese, Proceedings of the 2003 IEICE Society Conference
    Sep. 2003
  • Ulra-High Efficiency Power Amplifier Circuit Using High fmax Transistor (Invited)
    Kazuhiko Honjo
    Invited oral presentation, English, 2003 Japan-United States Joint Workshop on Space Solar Power System, 2003 Japan-United States Joint Workshop on Space Solar Power System, International conference
    Jul. 2003
  • Examination of 3rd Order Intermodulation Generation Mechanism of a Class F Microwave Amplifier
    Akie Kawai; Masato Seki; Kazuhiko Honjo
    Oral presentation, Japanese, Proceedings of the 2003 IEICE General Conference, Domestic conference
    Mar. 2003
  • L/S,C and X Band Pssive-Circuit-Embedded Resin Printed Circuit Board
    A.Saitou; K.Sato; T.Koyama; K.Watanabe; K.Honjo
    Oral presentation, Japanese, Proceedings of the 2003 IEICE General Conference
    Mar. 2003
  • Basic Consideration for Variable Bandwidth Filters using Resin Printed Circuit Board
    Norio Imai; Kazuhiko Honjo; Akira Saitou
    Oral presentation, Japanese, Proceedings of the 2003 IEICE General Conference
    Mar. 2003
  • Microwave semiconductor circuit education in University
    K.Honjo; K.Uchida; S.Nozaki; H.Morisaki; N.Nakajima
    Invited oral presentation, Japanese, 2002 IEICE Society Conference, Proceedings of the 2002 IEICE Society Conference
    Sep. 2002
  • DC Characteristic Variation in Double HeteroJunction GaAs/GaInP HBT
    M.Furuya; K.Takahashi; T.Hama; H. Ono; K.Uchida; S.Nozaki; H.Morisaki; K.Honjo
    Oral presentation, Japanese, 63th Conference of Japanese Applied Physics Society
    Sep. 2002
  • Microwave semiconductor circuit design using CAD (Part 2)
    Kazuhiko Honjo
    Others, Japanese, UEC CRC Advanced Technology Seminor Text
    Sep. 2002
  • Microwave semiconductor circuit design using CAD (Part 1)
    Kazuhiko Honjo
    Others, Japanese, UEC CRC Advanced Technology Seminor Text
    Sep. 2002
  • Fundamental of array antenna technology
    Kazuhiko Honjo
    Others, Japanese, Super conductor application research 3rd committee report (microwave high power application)
    May 2002
  • Ultra High Frequency Compound Semiconductor Devices and Their Applications
    Kazuhiko Honjo
    Invited oral presentation, Japanese, Electron Device Research Meeting, IEEJ, Electron Device Research Meeting, IEEJ
    Mar. 2002
  • Circuit Element Reduction for Class-F Amplifier Load Circuit with Reactance Compensation
    Yukiko Kobayashi; Kazuhiko Honjo
    Oral presentation, Japanese, Proceedings of the 2002 IEICE General Conference, Domestic conference
    Mar. 2002
  • High Efficiency Techniques for RF Integrated Circuits
    Kazuhiko Honjo
    Others, Japanese, Ultra low power dissipation integrated circuit research report (part 2)
    Mar. 2002
  • Millimeter Wave Heterojunction Transistors and Their Application to Ultra-High Effciency Amplifier
    Kazuhiko Honjo
    Invited oral presentation, Japanese, IEICE Technical Report (Microwave Millimeterwave Photonics Research Group), IEICE Microwave and Millimeterwave Photonics Research Meeting
    Nov. 2001
  • Report on 2001 IEEE MTT-S International Microwave Symposium
    K.Honjo; T.Tokumitsu; N.Suematsu; K.Hosoya; M.Miyazaki; T.Anada; R.Kajin; Y.Arai
    Invited oral presentation, Japanese, Technical Report of IEICE, Domestic conference
    Sep. 2001
  • Power Sources for S and C bands
    Kazuhiko Honjo
    Others, Japanese, Super conductor application research 3rd committee report (microwave high power application), Super conductor application research 3rd committee report (microwave high power application)
    May 2001
  • Ka-Band HBT MMIC High Power Amplifier
    Ymanouchi; Tanaka, Amamiya; Takaki Niwa; Jin Yamazaki; Kenichi Hosoya; Shimawaki, Honjo
    Oral presentation, Japanese, IEICE 2000 General Conference, Domestic conference
    Mar. 2000
  • Low Phase Noise 38 GHz HBT MMIC Oscillator With λ/4±δ Open Stubs
    Kenichi Hosoya; Shinichi Tanaka; Yasushi Amamiya; Takaki Niwa; Masayuki Mamada; Hidenori Shimawaki; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE 2000 General Conference
    Mar. 2000
  • Miniature Active Integrated Antennas Using MMIC Oscillators
    Yoshihisa Yasuoka, Kato; Shigeo Kawasaki; Yasuyuki Suzuki; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE 2000 General Conference, Domestic conference
    Mar. 2000
  • An active integrated antenna array using an MMIC oscillator on a ceramic substrate
    Y.Yasuoka; S.Kawasaki; Y.Suzuki; K.Honjo
    Oral presentation, Japanese, Technical Report of IEICE, Domestic conference
    Sep. 1999
  • HBT Technology for Microwave and Millimeterwave Application (Invited)
    Kazuhiko Honjo; Shinichi Tanaka; Hidenori Shimawaki
    Invited oral presentation, English, 1999 General Assembly URSI, 1999 General Assembly URSI, International conference
    Aug. 1999
  • 23GHz band active integrated antenna array based on strong coupling method
    K.Soda, Y.Yasuoka, Y.Nakata, N. Okubo, S.Kawasaki, Y.Suzuki, K.Honjo, M.Kanechika, K.Hirata
    Oral presentation, Japanese, 1999 IEICE General Conference, IEICE, Domestic conference
    Mar. 1999
  • 20GHz band acitive integrated antennas using a CPW-feed slot antenna and MMIC oscillator
    K.Soda; Y.Yasuoka; Y.Nakata; H.Kiyoda; S.Kawasaki; Y.Suzuki; K.Honjo
    Oral presentation, Japanese, Technical Report of IEICE, Domestic conference
    Feb. 1999
  • A high-efficiency Si MOS MMIC power amplifier
    Matuno; Yano; Suzuki; Tsubaki; Toda, Honjo
    Oral presentation, Japanese, Technical Report of IEICE, Domestic conference
    Jan. 1999
  • GaAs-based HBT technology for millimeter wave (Invited)
    Kazuhiko Honjo
    Invited oral presentation, English, The 3rd RIEC International Symposium on Novel Techniques and applications of millimeter-waves, The 3rd RIEC International Symposium on Novel Techniques and applications of millimeter-waves, Sendai, Japan, International conference
    Dec. 1998
  • A Ka band high-power amplifer using a prematched HBT chip
    S.Tanaka; Y. Amamiya; T. Niwa; M. Mamada; H.Shimawaki; K.Honjo
    Oral presentation, Japanese, 1998 IEICE Society Conference, IEICE, Domestic conference
    Sep. 1998
  • Distortion Characteristics of Power Si MOSFET for Mibile Phone Systems
    Tomohisa Hirayama; Noriaki Matsuno; Yasuyuki Suzuki; Toshio Watanabe; Kazuhiko Honjo
    Oral presentation, Japanese, 1998 IEICE General Conference, Domestic conference
    Mar. 1998
  • Issue of Si power devices in view of microwave circuit technology
    Noriaki Matuno; Yasuyuki Suzuki; Hitosi Yano; Tomohisa Hirayama; Kazuhiko Honjo
    Oral presentation, Japanese, IEEJ Technical Report, Domestic conference
    Mar. 1998
  • Large signal simulation of power MOSFET at 900 MHz band
    N.Matsuno; H.Yano; Y. Suzuki; Y. Inoue; T. Toda; Koze; K.Honjo
    Oral presentation, Japanese, IEICE Technical Report, IEICE, Domestic conference
    Jan. 1998
  • Issue on Si Power devices in view of microwave circuit technology (Invited)
    Y.Suzuki; N.Matsuno; H.Yano; Hirayama; K.Honjo
    Invited oral presentation, English, 1997 Microwave Workshops & Exhibition(MWE97,Digest/PS1-3, 273-280), Invited, 1997 Microwave Workshops & Exhibition, Domestic conference
    Dec. 1997
  • Practice of Dialectic Approach for Microwave Research
    Kazuhiko Honjo
    Invited oral presentation, Japanese, IEICE Microwave Reserch Group Meeting, IEICE Technical Report
    Dec. 1997
  • High-efficiency design for power MOSFET
    T. Hirayama; H.Yano; H.Chikamatsu; N.Matsuno; Y.Suzuki; K.Honjo
    Oral presentation, Japanese, 1997 Autumn Meeting of Japanese Applied Physics Society, IEICE, Domestic conference
    Oct. 1997
  • Analysis of Adjacent Channel Leakage Power Ratio
    Noriaki Matsuno; Hitoshi Yano; Yasuyuki Suzuki; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE 1997 Society Conference, Domestic conference
    Sep. 1997
  • 35-GHz 1-W High Power HBT Amplifier
    Shinichi Tanaka; Yasushi Amamiya; Seiichi Murakami; Masayuki Mamada; Shimawaki; Norio Goto; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE 1997 Society Conference, Domestic conference
    Sep. 1997
  • Intermodulation distortion dependence on bias circuit design in power MOSFETs
    Noriaki Matsuno; Hitoshi Yano; Yosuyuki Suzuki; Kazuhiko Honjo
    Oral presentation, Japanese, Technical Report of IEICE, Domestic conference
    Sep. 1997
  • High Power AlGaAs/GaAs HBT with 61% PAE for Digital Mobile Phone System
    Nobuyuki Hayama; Chang-Woo Kim; Hideki Takahashi; Norio Goto; Kazuhiko Honjo
    Oral presentation, Japanese, The Proceedings of 1997 IEICE General Conference, Domestic conference
    Mar. 1997
  • Power MOSFET Inter-Modulation Distortion Characteristics Related With Bais Suppling Circuit
    Noriaki Matsuno; Hitoshi Yano; Yasuyuki Suzuki; Kazuhiko Honjo
    Oral presentation, Japanese, The Proceedings of 1997 IEICE General Conference, Domestic conference
    Mar. 1997
  • A 20-GHz Active Integrated Antenna Consisting of CPW Fed Slot Antennas and MMIC Oscillators
    Kazuki Soda; Yoshihisa Yasuoka; Hiroyuki Nakada; Naoki Okubo; Harunobu Seita; Shigeo Kawasaki; Yasuyuki Suzuki; Kazuhiko Honjo
    Oral presentation, Japanese, Technical Report of IEICE
    Feb. 1997
  • High fmax GaAs HBT's and their analog and microwave applications
    Kazuhiko Honjo
    Others, Japanese, The Institute of Electrical Engineers of Japan (IEEJ) Ultra-high sped device research committee, IEEJ
    Nov. 1996
  • Analog and Microwave Applications of High fmax GaAs HBTs
    Kazuhiko Honjo
    Invited oral presentation, Japanese, IEEJ Ultra-High Speed Device Group Meeting, IEEJ Ultra-High Speed Device Group Meeting
    Nov. 1996
  • 2.4-GHz PLL IC Using 0.5 um Gate Length HJFET
    Hitoshi Yano; Noriaki Matsuno; Yasuyuki Suzuki; Kazuhiko Honjo
    Oral presentation, Japanese, The Proceedings of 1996 IEICE Society Conference
    Sep. 1996
  • Large Signal Simulation of Power MOSFET at 900 MHz
    Noriaki Matsuno; Hitoshi Yano; Yasuyuki Suzuki; Kazuhiko Honjo; Toshiaki Inoue; Tetsu Toda; Yasushi Kose
    Oral presentation, Japanese, The Proceedings of 1996 IEICE Society Conference
    Sep. 1996
  • 40Gbps HBT Preamplifier for Fiber Optic Communication
    Yasuyuki Suzuki; Hidenori Shimawaki; Yasushi Amamiya; Nobuo Nagano; Hitoshi Yano; Norio Goto; Kazuhiko Honjo
    Oral presentation, Japanese, Technical Report of IEICE
    Jul. 1996
  • High power,high efficiency K-band power HBTs
    Shinichi Tanaka; Seiichi Murakami; Hidenori Shimawaki; Masayuki Mamada; Norio Goto; Kazuhiko Honjo
    Oral presentation, Japanese, Technical Report of IEICE
    Jun. 1996
  • 26-GHz Power HBT with 42% PAE
    Sinichi Tanaka; Seiichi Murakami; Yasushi Amamiya; Hidenori Shimawaki; Masayuki Mamada; Norio Goto; Kazuhiko Honjo; Ishida; Saito, Yamamoto
    Oral presentation, Japanese, The Proceedings of 1996 General Conference
    Mar. 1996
  • High-Efficiency, High-Power Linear AlGaAs/GaAs HBT Amplifier for Digital Mobile Phone System
    Chang-Woo Kim; Nobuyuki Hayama; Hideki Takahashi; Norio Goto; Kazuhiko Honjo
    Oral presentation, Japanese, The Proceedings of IEICE 1996 General Conference
    Mar. 1996
  • 94GHz HBT MMIC Amplifier
    Hidenori Shimawaki; Seiichi Murakami; Yasushi Amamiya; Shinichi Tanaka; Masayuki Mamada; Norio Goto; Kazuhiko Honjo; Hidetoshi Kondo; Matsumura; Shigeru Dosono
    Oral presentation, Japanese, The Proceedings of 1996 IEICE General Conference, Domestic conference
    Mar. 1996
  • HBT Preamplifeir for 40Gbps Fiber Optic Comminication
    Yasuyuki Suzuki; Hidenori Shimawaki; Yasushi Amamiya; Nobuo Nagano; Hitoshi Yano; Noriko Goto; Kazuhiko Honjo
    Oral presentation, Japanese, The Proceedings of 1996 IEICE General Conference
    Mar. 1996
  • Base Contact Consideration for Millimeterwave High Power HBT with Selectively Regrown Base Layers
    Yasushi Amamiya; Hidenori Shimawaki; Chang-Woo Kim; Shinichi Tanaka; Seiichi Murakami; Naoki Furuhata; Masayuki Mamada; Norio Goto; Kazuhiko Honjo
    Oral presentation, Japanese, Technical Report of IEICE
    Jan. 1996
  • L-band and Ka band power HBT (Invited)
    K.Honjo; S.Tanaka; C.W.Kim; N.Goto; Y.Amamiya; H.Shimawaki; N.Hayama
    Invited oral presentation, English, IEEE MTT-S Int. Microwave Symp. Workshop, IEEE MTT-S Int. Microwave Symp. Workshop, International conference
    Dec. 1995
  • Distortion Analysis for High Power Si Bipolar Transistors
    Yasuyuki Suzuki; Norio Goto; Kazuhiko Honjo
    Oral presentation, Japanese, The Proceeding of 1995 IEICE Society Conference
    Sep. 1995
  • Microwave and Millimeterwave High Power HBT with p++ Regrown Extrinsic Base Region
    Shinichi Tanaka; Chang-Woo Kim; Yasushi Amamiya; Hidenori Shimawaki; Yosuke Miyoshi; Naoki Furuhata; Norio Goto; Kazuhiko Honjo
    Oral presentation, Japanese, The Proceedings of 1995 IEICE Society Conference
    Sep. 1995
  • HBT Preamplifier with Regrown Extrinsic Base Region
    Nobuo Nagano; Yasushi Amamiya; Hidenori Shimawaki; Yasushi Suzuki; Hiroshi Tezuka; Tetsuyuki Suzaki; Kazuhiko Honjo
    Oral presentation, Japanese, The Proceedings of 1995 IEICE Society Conference
    Sep. 1995
  • A High fmax AlGaAs/GaAs HBT with Lateral Hetero Regrown Base Contact Regions
    Yasushi Amamiya; Hidenori Shimawaki; Naoki Furuhata; Masayuki Mamada; Norio Goto; Kazuhiko Honjo
    Oral presentation, Japanese, 1995 Spring Conference of Applied Physics Society of Japan
    Aug. 1995
  • Surface Temperature Distribution for AlGaAs/GaAs HBT Measured by Infra Red Thermometer
    Yosuke Miyoshi; Chang-Woo Kim; NobuyukiHayama; Shinichi Tanaka; Norio Goto; Kazuhiko Honjo
    Oral presentation, Japanese, 1995 Spring Conference of Applied Physics Society of Japan, Japan Society of Applied Physics
    Aug. 1995
  • Microwave and Millimeterwave High Power Heterojunction Bipolar Transistors
    Norio Goto; Shinichi Tanaka; Chang-Woo Kim; Yasushi Amamiya; Hidenori Shimawaki; Yosuke Miyoshi; Naoki Furuhata; Kazuhiko Honjo
    Oral presentation, Japanese, IEE Electron Device Research Meeting
    Aug. 1995
  • Thermal design considerations and power performance of AlGaAs/GaAs power HBT for digital mobile communications
    Chang-Woo Kim; Yosuke Miyoshi; Hideki Takahashi; Nobuyuki Hayama; Norio Goto; Kazuhiko Honjo
    Oral presentation, Japanese, Technical Report of IEICE
    Jul. 1995
  • AlGaAs/GaAs HBT with InGaAs Etching Stopper Layer
    Yosuke Miyoshi; Shinichi Tanaka; Norio Goto; Kazuhiko Honjo
    Oral presentation, Japanese, 1995 Spring Conference of Applied Physics Society of Japan
    Mar. 1995
  • Microwave/millimeter-wave power HBTs with regrown extrinsic base layers
    Yasushi Amamiya; Chang-Woo Kim; Norio Goto; Shinichi Tanaka; Naoki Furuhata; Mamada; Hidenori Shimawaki; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report on ED
    Jan. 1995
  • AlGaAs/GaAs HBT 20Gbps IC for Fiber Optic Communication System
    Nagano, Soda; Tezuka; Suzaki, Honjo
    Oral presentation, Japanese, Technical Report of IEICE
    Jan. 1995
  • Precise HBT Emitter Mesa Fabrication Using InGaAs Etching Stopper Layer
    Yosuke Miyoshi; Shinichi Tanaka; Hidenori Shimawaki; Kazuhiko Honjo
    Oral presentation, Japanese, 1994 Applied Physics Society Fall Meeting
    Sep. 1994
  • Stability of AlGaAs/GaAs HBT with p+-p Selective Regrwon Extrinsic Base Region
    Yasushi Amamiya; Norio Goto; Shinichi Tanaka; Naoki Furuhata; Mamada, Chang-Woo Kim; Hidenori Shimawaki; Kazuhiko Honjo
    Oral presentation, Japanese, 1994 Japan Applied Pysics Society Fall Meeting, Japan Society of Applied Physics
    Sep. 1994
  • 20Gbps HBT Preamplifier Using Spiral Inductors
    Tezuka; Nagano; Soda; Suzaki, Honjo
    Oral presentation, Japanese, 1994 IEICE Society Conference
    Sep. 1994
  • 10Gbps Clock Extraction by HBT IC
    Soda; Nagano, Tezuka; Suzaki, Honjo
    Oral presentation, Japanese, 1994 IEICE Society Conference
    Sep. 1994
  • 25-GHz Band High Power HBT Amplifier Circuit
    Chang-Woo Kim; Norio Goto; Yasushi Amamiya; Shinichi Tanaka; Hidenori Shimawaki; Kazuhikio Honjo
    Oral presentation, Japanese, 1994 IEICE Society Conference
    Sep. 1994
  • 20Gbps AlGaAs/GaAs HBT Modulator Driver Circuit
    Nobuo Nagano; Hiroshi Tezuka; Tetsuyuki Suzaki; Kazuhiko Honjo
    Oral presentation, Japanese, 1994 IEICE Society Conference
    Sep. 1994
  • High Performance GaAs HBT using P+-Regrowth technology and AlGaAs Passivation Technology
    Kazuhiko Honjo; Hidenori Shimawaki; Yasushi Amamiya; Nobuyuki Hayama; Yosuke Miyoshi
    Oral presentation, Japanese, 1994 IEICE General Conference
    Mar. 1994
  • High Performance GaAs HBT using P+-Regrowth technology and AlGaAs Passivation Technology
    Honjo; Shimawaki; Amamiya; Hayama, Miyoshi
    Invited oral presentation, Japanese, 1994 IEICE General Conference, 1994 IEICE General Conference, Domestic conference
    Mar. 1994
  • Thermal Behavior of Power HBT
    Chang-Woo Kim; Norio Goto; Kazuhiko Honjo
    Oral presentation, Japanese, 1994 Applied Physics Society Spring Meeting
    Mar. 1994
  • A fmax 224GHz AlGaAs/InGaAs HBT with Extrinsic Selective Regrown Layaers
    Hidenori Shimawaki; Yasushi Amamiya; Naoki Furuhata; Kazuhiko Honjo
    Oral presentation, Japanese, 1993 Applied Physics Society Fall Meeting
    Sep. 1993
  • AlGaAs/GaAs HBT Application to High Power Devices in Mobile Phone Systems
    Norio Goto; Nobuyuki Hayama; Hideki Takahashi; Yasushi Amamiya; Kazuhiko Honjo
    Oral presentation, Japanese, 1993 IEICE General Meeting
    Mar. 1993
  • Simulated Current Gain Due to Surface State Density in AlGaAs/GaAs HBT Extrinsic Base Region
    Chang-Woo Kim; Norio Goto; Kazuhiko Honjo
    Oral presentation, Japanese, 1993 Applied Physics Society Spring Meeting
    Mar. 1993
  • Submicron Square AlGaAs/GaAs HBT with Heterojunction Guard Ring
    Yosuke Ueda; Nobuyuki Hayama; Kazuhiko Honjo
    Oral presentation, Japanese, 1993 Applied Physics Society Spring Meeting
    Mar. 1993
  • Current Stress Stability of C-doped AlGaAs/GaAs HBT
    Yasushi Amamiya; Hidenori Shimawaki; Nobuyuki Hayama; Goto; Hideki Hakahashi; Kazuhiko Honjo
    Oral presentation, Japanese, 1993 Applied Physics Society Spring Meeting
    Mar. 1993
  • Report on APMC92, 5th Australian Symposium on Millimeter ans Sub-millimeter Waves, and URSI
    Awai, Kamitsuna; Kobayashi, Tsutumi; Nikawa, Honjo; Mizuno, Yasumoto
    Others, Japanese, IEICE Microwave Research Group Meeting
    Feb. 1993
  • AlGaAs/GaAs HBTs with heavily C-doped extrinsic base layers selectively grown by MOMBE
    Hidenori Shimawaki; Yasushi Amamiya; Naoki Furuhata; Kazuhiko Honjo
    Oral presentation, Japanese, Technical Report of IEICE
    Jan. 1993
  • Be-Doped HBT Stability Comparison Between InGaAs Base and AlGaAs Base
    Shinichi Tanaka; Kenji Kasahara; Hidenori Shimawaki; Kazuhiko Honjo
    Oral presentation, Japanese, 1992 Applied Physic Society Fall Meeting
    Sep. 1992
  • Current Stress Degradation in Be-doped AlGaAs/GaAs HBT
    Hidenori Shimawaki; Yasushi Amamiya; Nobuo Nagano; Shinichi Tanaka; Kazuhiko Honjo
    Oral presentation, Japanese, 1992 Applied Physic Society Fall Meeting
    Sep. 1992
  • HBT Current Gain Analysis Method Considering Collector Recombination Current Density
    Hidenori Shimawaki; Yasushi Amamiya; Kazuhiko Honjo
    Oral presentation, Japanese, 1992 Applied Physic Society Fall Meeting
    Sep. 1992
  • Selctively Regrown Extrinsic Base HBT with p++/p+ Regrown Contact
    Hidenori Shimawaki; Yasushi Amamiya; Naoki Furuhata; Kazuhiko Honjo
    Oral presentation, Japanese, 1992 Applied Physic Society Fall Meeting
    Sep. 1992
  • AlGaAs/GaAs HBT IC for Fiber Optic Communication
    Nagano; Suzaki, Soda; Kasahara, Honjo
    Oral presentation, Japanese, 1992 IEICE Society Conference
    Sep. 1992
  • HBT's for microwave and high speed digital Applications(Invited Paper)
    Kazuhiko Honjo; Nobuyuki Hayama; Nobuo Nagano
    Invited oral presentation, English, 5th Australian Symposium on Millimeter and Sub-millimeter Wave, 5th Australian Symposium on Millimeter and Sub-millimeter Wave, Adelaide, Australia, International conference
    Aug. 1992
  • High Speed Optical Receiver Using HBT Preamplifier
    Masaaki Soda; Nobuo Nagano; Takeuchi; Saito, Suzaki; Fujita, Honjo; Shikada
    Oral presentation, Japanese, 1991 IEICE Society Conference, Domestic conference
    Sep. 1991
  • 22 GHz Band AlGaAs/GaAs Monolithic HBT Oscillator
    Nobuyuki Hayama; Kazuhiko Honjo
    Oral presentation, Japanese, 1991 IEICE Society Conference, Domestic conference
    Sep. 1991
  • AlGaAs/GaAs HBT 1 K Gate Array
    Nobuyuki Hayama; Hideki Takahashi; Yuzuru Tomonou; Kazuhiko Honjo
    Oral presentation, Japanese, 1991 IEICE Society Conference, Domestic conference
    Sep. 1991
  • Microwave and millimeter wave transistor (Invited)
    Kazuhiko Honjo
    Invited oral presentation, English, 1991 Asia Pacific Microwave Technology and Education Workshop, 1991 Asia Pacific Microwave Technology and Education Workshop, Taiwan, International conference
    Sep. 1991
  • AlGaAs/GaAs HBT Monolithic Ultra Broadband Amplifier
    Nobuo Nagano; Tetsuyuki Suzaki; Hidenori Shimawaki; Akihiko Okamoto; Kazuhiko Honjo
    Oral presentation, Japanese, 1991 IEICE General Conference, Domestic conference
    Mar. 1991
  • Selective growth of p+-GaAs layers for extreamely low base-resistance HBTs
    Hidenori Shimawaki; Naoki Furuhata; Kazuhiko Honjo
    Oral presentation, Japanese, Technical Report of IEICE
    Jan. 1991
  • AlGaAs/GaAs HBT Monolithic Ultra Broadband Amplifier
    Nobuo Nagano; Tetsuyuki Suzaki; Hidenori Shimawaki; Akihiko Okamoto; Kazuhiko Honjo
    Oral presentation, Japanese, Technical Report of IEICE
    Jan. 1991
  • Low Frequency Noise Characteristics for AlGaAs/GaAs HBT with AlGaAs Passivation Layer
    Nobuyuki Hayama; Kazuhiko Honjo
    Oral presentation, Japanese, 1990 IEICE Society Conference
    Oct. 1990
  • Fundamental Study on HBT with MOMBE Regrown Extrinsic Base Layer
    Hidenori Shimawaki; Naoki Furuhata; Kazuhiko Honjo
    Oral presentation, Japanese, 1990 Applied Physics Society Spring Meeting
    Sep. 1990
  • Emitter Size Effect on Current Gain in AlInAs/InGaAs HBT
    Shinichi Tanaka; Akio Furukawa; Toshio Baba; Kazuhiko Honjo; Masashi Mizuta
    Oral presentation, Japanese, 1990 Applied Physics Society Spring Meeting
    Mar. 1990
  • Fully self-aligned AlGaAs/GaAs HBT with AlGaAs passivation layer
    Nobuyuki Hayama; Kazuhiko Honjo
    Oral presentation, Japanese, Technical Report of IEICE
    Jan. 1990
  • Control of High fT Bais Region in AlInAs/InGaAs HBT
    Shinichi Tanaka; Akio Furukawa; Toshio Baba; Mohammad Madihian; Kazuhiko Honjo; Masashi Mizuta
    Oral presentation, Japanese, Applied Physics Society Applied Electon Material Section Meeting
    Jul. 1989
  • Ultra-high-speed compound HBT's and their circuit application
    Kazuhiko Honjo
    Public discourse, Japanese, Semiconductor physics research meeting, Osaka University, Osaka University, Domestic conference
    Jun. 1989
  • Circuit Applications of Self-Aligned HBTs (Invited paper)
    Kazuhiko Honjo
    Invited oral presentation, English, 13th Workshop on Compound Semiconductor Devices and ICs, IEEE, Cabourg, France, International conference
    May 1989
  • High Frequency Performance and Electron Transport Characteristics in AlInAs/InGaAs HBT
    Shinichi Tanaka; Akio Furukawa; Toshio Baba; Mohammad Madihian; Kazuhiko Honjo; Masashi Mizuta
    Oral presentation, Japanese, 1989 Applied Physics Society Spring Meeting
    Apr. 1989
  • A 20-28 GHz AlGaAs/GaAs self-aligned monolithic HBT oscillator
    M.Madihian; Hidenori Shimawaki; Kazuhiko Honjo
    Oral presentation, Japanese, Technical Report of IEICE
    Jan. 1989
  • Crystal growth design and self-aligned microfabrication process for InAlGaAs based HBT
    S.Tanaka; A.Furukawa; M.Baba; K.Ohta; M.Madihian; K.Honjo
    Oral presentation, Japanese, 1988 Fall Meeting of Japan Applied Physics Society, Japanese Applied Physics Society
    Oct. 1988
  • K-Ka band AlGaAs/GaAs HBT monolithic ocsillator
    M.Madihian; H.Shimawaki; K.Honjo
    Oral presentation, Japanese, 1988 Fall Meeting of Japanes Applied Physics Society, Japanese Applied Physics Society
    Sep. 1988
  • High-speed MUX and DMUX design using self-aligned AlGaAs/GaAs HBT
    Yuzuru Tomonou; Isamu Takano; Mohamad Madihian; Kazuhiko Honjo
    Oral presentation, Japanese, 1988 Fall Meeting of IEICE, IEICE
    Sep. 1988
  • Current mode logic AlGaAs/GaAs IC using fully self-aligned process
    Nobuyuki Hayama; Mohamad Madihian; Hedeo Toyoshima; Hideki Takahashi; Kazuhiko Honjo
    Oral presentation, Japanese, 1988 IEICE General Conference, IEICE
    Mar. 1988
  • Low-phase-noise Ku-band AlGaAs/GaAs HBT oscillator
    Mohamad Madihian; Steven LeSage; Nobuyuki Hayama; Kazuhiko Honjo
    Oral presentation, Japanese, 1988 IEICE General Conference, IEICE
    Mar. 1988
  • A Ku band AlGaAs/GaAs HBT oscillator
    Mohammad Madihian; Steve Lesage; Nobuyuki Hayama; Kazuhiko Honjo
    Oral presentation, Japanese, Technical Report of IEICE
    Jan. 1988
  • High speed fully self-aligned AlGaAs/GaAs HBT
    Nobuyuki Hayama; Mohammad Madihian; Akihiko Okamoto; Hideo Toyoshima; Hideki Takahashi; Kazuhiko Honjo
    Oral presentation, Japanese, Technical Report of IEICE
    Jan. 1988
  • Design and fabrication of logic family based on self-aligned AlGaAs/GaAs HBT
    Mohamad Madihian; Shinichi Tanaka; Nobuyuki Hayama; Akihiko Okamoto; Kazuhiko Honjo
    Oral presentation, Japanese, 1987 IEICE Fall National Convention of Semiconductor/Material Department, IEICE
    Nov. 1987
  • High-speed AlGaAs/GaAs HBT SSI logic family
    Mohammad Madihian; Shinichi Tanaka; Nobuyuki Hayama; Akihiko Okamoto; Kazuhiko Honjo
    Oral presentation, Japanese, Technical Report of IEICE
    Nov. 1987
  • High-speed fully-self-aligned AlGaAs/GaAs HBT fabrication
    Nobuyuki Hayama; Mohamad Madihian; Akihiko Okamoto; Kazuhiko Honjo
    Oral presentation, Japanese, 1987 Fall Meeting of Japan Society of Applied Physics, Japan Society of Applied Physics
    Oct. 1987
  • Pattern-inversion self-aligned AlGaAs/GaAs HBT process development
    Shinichi Tanaka; Mohamad Madihian; Hideo Toyoshima; Nobuyuki Hayama; Kazuhiko Honjo
    Oral presentation, Japanese, 1987 Fall Meeting of Japan Society of Applied Physics, Japan Society of Applied Physics
    Oct. 1987
  • Sub-micron fully-self-aligned AlGaAs/GaAs HBT process
    Nobuyuki Hayama; Akihiko Okamoto; Kazuhiko Honjo
    Oral presentation, Japanese, 1987 Spring Meeting of Japan Society of Applied Physics, Japan Society of Applied Physics
    Mar. 1987
  • Submicron fully self-aligned AlGaAs/GaAs heterojunction bipolar transistor
    Nobuyuki Hayama; Mohamad Madihian; Akihiko Okamoto; Machida; Kazuhiko Honjo
    Oral presentation, Japanese, Technical Report of IEICE, IEICE
    Jan. 1987
  • Design, fabrication and modeling of AlGaAs/GaAs self-aligned heterojunction bipolar transistors
    Mohammad Madihian; Kazuhiko Honjo; Hideo Toyoshima; Shigetaka Kumashiro
    Oral presentation, Japanese, Technical Report of IEICE
    Nov. 1986
  • Device design using two-demensional device simulator for self-aligned AlGaAs/GaAs HBT
    Kazuhiko Honjo; Mohamad Madihian; Shigetaka Kumashiro
    Oral presentation, Japanese, 1986 IEICE Fall National Convention of Optics and Radio Wave Department, IEICE
    Sep. 1986
  • Microwave oscillator using AlGaAs/GaAs heterojunction bipolar transistor
    Mohamad Madihian; Nobuyuki Hayama; Kazuhiko Honjo; Hideo Toyoshima
    Oral presentation, Japanese, 1986 IEICE General Conference, IEICE
    Mar. 1986
  • Microwave AlGaAs/GaAs heterojunction bipolar transistor
    Nobuyuki Hayama; Kazuhiko Honjo; Mohammad Madihian; Hideo Toyoshima; Yoshie Kusagai
    Oral presentation, Japanese, Technical Report of IEICE
    Jan. 1986
  • Fabrication of AlGaAs/GaAs heterojunction bipolar transistor
    Nobuyuki Hayama; Kazuhiko Honjo; Mohamad Madihian; Yoshie Kusagai; Hideo Toyoshima
    Oral presentation, Japanese, 1985 IEICE Fall National Convention of Semiconductor/Material Department, IEICE
    Nov. 1985
  • 4GHz-band amplifier using AlGaAs/GaAs heterojunction bipolar transistor
    Mohamad Madihian; Kazuhiko Honjo; Yoshie Kusagai
    Oral presentation, Japanese, 1985 IEICE Fall National Convention of Semiconductor/Material Department, IEICE
    Nov. 1985
  • 11GHz band GaAs monolithic analog 1/4 frequency divider
    Kazuhiko Honjo; Mohamad Madihian; Yoshie Kusagai
    Oral presentation, Japanese, 1985 IEICE Fall National Convention of Semiconductor/Material Department, IEICE
    Nov. 1985
  • 11GHz-band voltage-controlled GaAs monolithic oscillator
    MOhamad Madihian; Kazuhiko Honjo; Yoshie Kusagai
    Oral presentation, Japanese, 1985 IEICE Fall National Convention of Semiconductor/Material Department, IEICE
    Nov. 1985
  • X-band GaAs monolithic analog 1/4 frequency divider
    Kazuhiko Honjo; Mohamad Madihian; Yoshie Kusagai
    Oral presentation, Japanese, Technical Report of IEICE, IEICE
    Jul. 1985
  • 11 GHz band GaAs monolithic voltage-controled oscillator
    Mohamad Madihian; Kazuhiko Honjo; Yoshie Kusagai
    Oral presentation, Japanese, Technical Report of IEICE, IEICE
    Jul. 1985
  • X-band GaAs monolithic low noise frequency converter
    Kazuhiko Honjo; Yasuhiro Hosono; Tadahiko Sugiura
    Oral presentation, Japanese, 1984 IEICE Fall National Convention of Optics and Radio Wave Department, IEICE
    Oct. 1984
  • X-band GaAs monolithic 3-stage low noise amplifier
    Kazuhiko Honjo; Yasuhiro Hosono; Tadahiko Sugiura
    Oral presentation, Japanese, 1984 IEICE Fall National Convention of Optics and Radio Wave Department, IEICE
    Oct. 1984
  • X-band low-noise GaAs monolithic frequency converter
    Kazuhiko Honjo; Yasuhiro Hosono; Tadahiko Sugiura
    Oral presentation, Japanese, Technical Report of IEICE, IEICE
    Sep. 1984
  • 12GHz-band GaAs monolithic dual gate MESFET mixer
    Tadahiko Sugiura; Kazuhiko Honjo; Tsutomu Tsuji
    Oral presentation, Japanese, 1983 IEICE Fall National Convention of Semiconductor/Material Department, IEICE
    Sep. 1983
  • 12GHz-band GaAs dual-gate MESFET monolithic mixer
    Tadahiko Sugiura; Kazuhiko Honjo; Tsutomu Tsuji
    Oral presentation, Japanese, Technical Report of IEICE
    Jul. 1983
  • 12GHz-band low noise GaAs monolithic amplifier
    Tadahiko Sugiura; Hitoshi Ito; Tsutomu Tsuji; Kazuhiko Honjo
    Oral presentation, Japanese, 1983 IEICE General Conference, IEICE
    Apr. 1983
  • Temperature characteristics for GaAs monolithic broadband amplifier having resistive load
    Kazuhiko Honjo
    Oral presentation, Japanese, 1983 IEICE General Conference, IEICE
    Apr. 1983
  • 12GHz-band Ion-implanted GaAs monolithic low-noise amplifier
    Hitoshi Ito; Tadahiko Sugiura; Kazuhiko Honjo; Tsutomu Tsuji; Toshiharu Ozawa
    Oral presentation, Japanese, IEICE Technical Report (Semiconductor/Transistor Research Group), IEICE
    Jan. 1983
  • 100MHz-8.5GHz band GaAs monolithic amplifier
    Kazuhiko Honjo; Tadahiko Sugiura
    Oral presentation, Japanese, 1982 IEICE Fall National Convention of Optics and Radio Wave Department, IEICE, Domestic conference
    Aug. 1982
  • Low-power-dissipation low-noise GaAs monolithic amplifier based on ion implantation technology
    Kazuhiko Honjo; Tadahiko Sugiura; Toshiharu Ozawa; Tsutomu Tsuji
    Oral presentation, Japanese, 1982 IEICE Fall National Convention of Optics and Radio Wave Department, IEICE
    Aug. 1982
  • Ion-implanted closely-spaced-electrode low-noise GaAs MESFET
    Hitoshi Ito; Tsutomu Tsuji; Kazuhiko Honjo; Tadahiko Sugiura
    Oral presentation, Japanese, 1982 IEICE Fall National Convention of Optics and Radio Wave Department, IEICE
    Aug. 1982
  • Microwave broadband GaAs monolithic amplifier
    Kazuhiko Honjo; Tadahiko Sugiura
    Oral presentation, Japanese, Technical Report of IEICE, Domestic conference
    Jul. 1982
  • Ion implanted GaAs monolithic broadband amplifiers for VHF-UHF communications
    Kazuhiko Honjo; Tadahiko Sugiura; Toshiharu Ozawa; Tsuji Chikara
    Oral presentation, Japanese, Technical Report of IEICE, Domestic conference
    May 1982
  • Lumped element capacitor/inductor design for MMIC and its application to X-band amplifier
    Hitoshi Ito; Tadahiko Sugiura; Kazuhiko Honjo
    Oral presentation, Japanese, 1982 IEICE General Conference, IEICE, Domestic conference
    Mar. 1982
  • Ultra-broadband GaAs monolithic amplifier
    Kazuhiko Honjo; Tadahiko Sugiura; Hitoshi Ito
    Oral presentation, Japanese, 1981 IEICE Fall National Convention of Semiconductor/Material Department, IEICE, Domestic conference
    Oct. 1981
  • Ultrabroad-band GaAs monolithic amplifier
    Kazuhiko Honjo; Tadahiko Sugiura; Hitoshi Ito
    Oral presentation, Japanese, Technical Report of IEICE, Domestic conference
    Jul. 1981
  • Ultrawideband GaAsFET amplifiers for Gbit/s data rate systems
    Kazuhiko Honjo; Yoichiro Takayama
    Oral presentation, Japanese, Technical Report of IEICE, Domestic conference
    Oct. 1980
  • A 700kHz-6GHz GaAsFET amplifier
    Kazuhiko Honjo; Yoichiro Tkayama
    Oral presentation, Japanese, 1980 IEICE Fall National Convention of Optics and Radio Wave Department, IEICE, Domestic conference
    Sep. 1980
  • A 25-W, 5-GHz GaAs FET amplifier for microwave landing system
    Kazuhiko Honjo; Yoichiro Takayama; Genichi Onodera
    Oral presentation, Japanese, Technical Report of IEICE, Domestic conference
    Jul. 1980
  • High power broad band internal matching technique for microwave GaAs FETs
    Kazuhiko Honjo; Yoichiro Takayama; Asamitsu Higashisaka
    Oral presentation, Japanese, Technical Report of IEICE, Domestic conference
    Jan. 1980
  • Internally matched 5-GHz 15-W GaAs FET and 20-W amplifier
    Kazuhiko Honjo; Yoichiro Takayama
    Oral presentation, Japanese, 1979 IEICE Fall National Convention of Semiconductor/Material Department, IEICE
    Oct. 1979
  • Internally matched 25-W GaAs FET operating at 6GHz
    Kazuhiko Honjo; Yoichiro Takayama; Asamitsu Higashisaka
    Oral presentation, Japanese, 1984 IEICE Fall National Convention of Semiconductor/Material Department, IEICE, Domestic conference
    Oct. 1979
  • GaAs power FETs with a recess structure
    Asamitsu Higashisaka, Takashi Furutsuka, Kazuhiko Honjo, Yoichiro Takayama, Fumio Hasegawa
    Oral presentation, Japanese, Technical Report of IEICE, Domestic conference
    Jan. 1979
  • 15-Watt internally matched GaAs FET and 20-Watt amplifier operating at 6 GHz
    Kazuhiko Honjo; Yoichiro Takayama; Takashi Furutsuka; Asamitsu Higasisaka
    Oral presentation, Japanese, Technical Report of IEICE
    Jan. 1979
  • Broadband internal matching for 6GHz high-power GaAsFET's
    Kazuhiko Honjo; Yoichiro Takayama; Fumio Hasegawa
    Oral presentation, Japanese, 1978 IEICE General Conference, IEICE
    Mar. 1978
  • High-breakdown voltage high-power GaAs FET with simple recess gate structure
    Takashi Furustuska; Kazuhiko Honjo; Asamitsu Higasisaka; Fumio Hasegawa
    Oral presentation, Japanese, IEICE Technical Report (Semiconductor/Transistor Research Group), IEICE, Domestic conference
    Jan. 1978
  • Broadband internal matching for C-band high-power GaAs FETs
    Kazuhiko Honjo; Yoichiro Takayama; Asamitsu Higasisaka
    Oral presentation, Japanese, Technical Report of IEICE
    Jul. 1977
  • Internally matched C-band high-power GaAsFET
    Yoichiro Takayama; Kazuhiko Honjo; Tadayuki Ogawa; Asamitsu Higashisaka; Fumio Hasegawa
    Oral presentation, Japanese, 1977 IEICE General Conference, IEICE
    Mar. 1977
  • Injection locking phnomena of oscillator with linear frequency variation
    Kazuhiko Honjo; Seijiro Furukawa; Yoichiro Ogita
    Oral presentation, Japanese, 1976 IEICE General Conference, IEICE
    Mar. 1976
  • Study on injection locked TRAPATT amplifier
    Seijiro Furukawa; Yoichiro Ogita; Kazuhiko Honjo
    Oral presentation, Japanese, IEICE Technical Report (Microwave Research Group), IEICE
    Aug. 1974

Courses

  • Circuit Systen fot Signal Transmission
    Apr. 2010 - Sep. 2016
    The University of Electro-Communications
  • Semiconductor Integrated Circuit Engineering
    Apr. 2005 - Sep. 2016
    The University of Electro-Communications
  • Advanced Topics of Semiconductor Integrated Circuits
    Apr. 2004 - Sep. 2016
    Graduate School of The University of Electro-Communications
  • Advanced Topics on LSI Design
    Apr. 2004 - Sep. 2016
    The University of Electro-Communications
  • Electron Devices and Circuits
    Apr. 2011 - Sep. 2014
    The University of Electro-Communications
  • Communication Science- Project Based Learning-
    2009 - 2012
    The University of Electro-Communications
  • Circuits and Systems
    2002 - 2012
    The University of Electro-Communications
  • Basis of Circuit Theory
    2005
    The University of Electro-Communications
  • Advanced Topics of Microwave Transmission Engineering
    Apr. 2001 - Sep. 2003
    Graduate School of the University of Electro-Communications
  • Advanced Topics of Semiconductor Engineering
    Apr. 1999 - Mar. 2002
    Graduate School of Aoyama Gakuin University

Affiliated academic society

  • 1980 - Present
    IEEE
  • 1974 - Present
    IEICE

Research Themes

  • Personal-Area High-Speed High-Capacity Wireless Communication and Power Transfer
    石川亮
    Ministry of Internal Affairs and Communications, SCOPE
    Jun. 2019 - Mar. 2021
  • Reconfigurable RF Switch Based on Metamaterial Technology
    水谷浩
    JSPS, KAKEN
    Apr. 2017 - Mar. 2020
  • Super-Multiplexing OAM Communication Using Loop Amtenna Array
    Ryo Ishikawa
    Ministry of Intenal Affairs and Communications, Strategic Information and Communications R&D Promotion Programme
    Jun. 2017 - Mar. 2019
  • 5G R&D Activities for Systems control technologies in Multi-Band and Multi-Access Layered Cells
    Yasushi Yamao
    Ministry of Internal Affairs and Communications, Research and Development for Radio Frequency Resource
    Sep. 2015 - Mar. 2019
  • Arrayed Cascode Linear Doherty Amplifier
    Kazuhiko Honjo
    Ministry of Education, MEXT/JSPS KAKENHI Grant (B), 電気通信大学, 基盤研究(B), Principal investigator
    2014 - 2016
  • Bi-directional Wireless Power Transfer with Smart Device Module
    Kazuhiko Honjo
    Ministry of Internal Affairs and Communications, Strategic Information and Communications R&D Promotion Programme, Principal investigator
    Aug. 2013 - Mar. 2015
  • Wireless ICT Smart Grid Network
    Kazuhiko Honjo
    Ministry of Internal Affairs and Communications, Strategic Information and Communications R&D Promotion Programme, Principal investigator
    Aug. 2010 - Mar. 2013
  • Microwave Modeling of Single Electron Transistor
    Kazuhiko Honjo
    Ministry of Education, MEXT/JSPS KAKENHI Grant (C), 電気通信大学, 基盤研究(C), Principal investigator, SETは単電子トランジスタと呼ばれるようにその名称にトランスファーレジスターを語源とするトランジスタという用語が含まれている。このトランスファーレジスター機能を最大限発揮させ、これまでSETにおいては十分議論されてこなかった電力利得と帯域に関して詳細な検討を行った。今年度は、SETの解析モデルとして内田らより提案されている電流モデル式をベースとし、この式をゲート電圧、およびドレーン電圧で編微分して得られる量をとトランスコンダクタンスおよび出力コンダクタンスと定義し高周波等価回路を導出した。この等価回路の入力端子に信号源を接続し、出力端子に負荷インピーダンスを接続したとき、入力電力を電源の有能電力で定義し、整合負荷における消費電力を出力電力と定義する。このときの出力電力と入力電力の比、すなわち有能電力利得を、SETを構成するする上で必要な二個のトンネル接合と一個の接合容量の回路パラメータを用いて計算を行った。この結果ソース側のトンネル接合を実現可能な範囲である90MΩ低下させると電力利得を40dB改善できることが分かった。一方ドレーン側のトンネル接合は高抵抗化による電力利得向上効果と相互コンダクタンス低下による電力利得低減効果が互いの打ち消しあい、最適設計しても電力利得に大きな改善が見られないことが分かった。トンネル接合の構造とトンネル抵抗およびトンネル容量の関係も導出し、本研究で得られた電力利得計算手法とリンクさせることができるようになった。
    2011 - 2013
  • A study of high-efficiency low-distortion cascode power amplifiers
    Yoichiro TAKAYAMA; 本城 和彦; Ryo ISHIKAWA; Kazuhiko HONJO
    Ministry of Education, Culture, Sports, Science and Technology, Grants-in-Aid for Scientific Research(C)), 電気通信大学, 基盤研究(C), Coinvestigator not use grants, We proposed a new cascode circuit with independently biased transistors, which makes possible stable dc operation and independent setting of transistor operating modes. In consequence, the circuit can realize high-efficiency and low-distortion power amplifier. Microwave power amplifiers with the proposed configuration consisting of GaN HEMTs was first designed and fabricated. Also, 2 GHz-band power amplifier MMICs using InGaP/GaAs HBTs and GaAs pHEMTs were tried. These amplifiers realized high-efficiency and low-distortion performances, as expected., 22560321
    2010 - 2012
  • Research on the Wireless Network Technologies for the Safety Vehicular Systems
    Nobuo NAKAJIMA; Yoshio KARASAWA; Kazuhiko HONJO; Yasushi YAMAO; Takeo FUJII
    Ministry of Education, Culture, Sports, Science and Technology, Grants-in-Aid for Scientific Research(基盤研究(A)), 電気通信大学, 基盤研究(A), Coinvestigator not use grants, In order to prevent automobile accidents, reliable car-to-cat wireless communication, precise positioning and driver alarm system were investigated. Reliable communication is achieved by MIMO+ Adaptive demodulation, road side repeater, and new routing protocol based on the situation of the car(speed, relative position to the surrounding cars, and so on). Robust, low distortion and efficient RF devices were developed. Accurate pedestrian positioning system was realized by 2. 4 GHz wireless system. The error was less 1 meter which will be enough for avoiding the collision. Quick cognitive wearable interface was developed for car drivers., 20246066
    2008 - 2011
  • Miniature Antenna and Circuit Board for Short-Distance Radio
    Akira Saitou
    Ministry of Economy, Trade and Industry, Strategic Fundamental Technology R&D
    Apr. 2006 - Mar. 2010
  • Ultra-High Sensitibity Broadband Quantum Wire Photo Detector Array
    M. Ogura
    Ministry of Intenal Affairs and Communications, Strategic Information and Communications R&D Promotion Programme
    Oct. 2004 - Mar. 2009
  • Improvements in group delay characteristics based on the w-analysis of electro-magnetic waves and semianductonr devices
    Kazuhiko HONJO; Ryo ISHIKAWA
    Ministry of Education, Culture, Sports, Science and Technology, Grants-in-Aid for Scientific Research(基盤研究(C)), 電気通信大学, 基盤研究(C), Principal investigator, Suppression of the group delay dispersions for RF components is one of the most important issues for realizations of UWB (Ultra Wide Band) radio system. For that purpose, as the first step, a co-simulation technique between the Maxwell's equations and the semiconductor device equations has been developed based on the FDTD method. Using the method, a 60 GHz amplifier module consisting of PDTL(Planar Dielectric Transmission line) waveguides and a HEMT device has been co-simulated as the first trial, where crystal structures for the compound semiconductor material and the millimeter-wave waveguides were simultaneously analyzed. Simulated results and measured results for the module were in good agreements. Thus the method has been successfully applied to the microwave characteristics analysis of long finger structures for InGaP/GaAs HBT's and A1GaN/GaN HEMT's. As the second step, the group delay generation origin was investigated in a viewpoint of the circuit technology, including both lumped element circuits and distributed circuits. The second step delivered a successful realization of fully distributed circuit switch MMIC with low group delay dispersion& Also a novel group delay compensation circuit topology based on the composite right hand/left band concept was realized. Also the minimum sized broadband planar self-complementary antenna was realized. As the final step, both an InGaP/GaAs HBT ultrabroad band amplifier with an active balun and a group delay compensation MMIC were designed, fabricated and tested. It has been demonstrated that the amplifier group delay was successfully suppressed. The MMIC can be used as a driver amplifier far UWB self-complementary antennas., 18560329
    2006 - 2007
  • Printed Circuitboard with Wireless Communication Function
    Akira Saitou
    Ministry of Economy, Trade and Industry, R&D by regional regeneration consortiums
    Jun. 2004 - Mar. 2006
  • Generation Mechanism for 3^ Order Inter-Modulation Distortion in Harmonic Frequency Controlled Ultra-High Efficiency Amplifier
    Kazuhiko Honjo
    Ministry of Education, Culture, Sports, Science and Technology, Grants-in-Aid for Scientific Research(基盤研究(C)), 電気通信大学, 基盤研究(C), Principal investigator, Circuit synthesis methods for class-F high efficiency microwave amplifiers have been proposed, where up to 7^ order higher harmonic frequencies are taken into consideration in the design. In the class-F microwave amplifiers, load impedances for a transistor are zero at even order harmonic frequencies and those are infinity at odd order harmonic frequencies. Because of intervention of output parasitic capacitance such as base-collector capacitance in heterojunction bipolar transistors(HBT), the open circuit condition for the transistor is difficult to be retained. In addition, circuit losses in class-F load circuit degrade power efficiency also. In this project, using the ISE-TCAD two dimentional device simulator, optimum doping density for HBT collector has been derived for the class-F amplifier operation. And also introducing low loss resin circuit board with tan δ=0.0023, class F load circuit considering up to 7^ order harmonic frequencies were designed and fabricated in a distributed circuit form. Fabricated InGaP/GaAs HBT class-F amplifier circuits operating at 1.9 GHz delivered 74.2% measured PAE(Power Added Efficiency) and 76.6% measured collector efficiency. In the case that circuit loss is de-embedded, the PAE is 78.7% and the collector efficiency reached 81.2%. These values are bench mark results in microwave amplifiers operating around 2 GHz.In a 3^ order inter modulation distortion view point, not only a fundamental frequency, but also harmonic and sub-harmonic frequencies should be taken into account, since frequency mixing phenomena among these frequencies take important rolls for distortion generations. In FET class-F amplifier, short-circuited conditions for even order higher harmonic frequencies bring about less distortions, since generation mechanism via even order higher harmonic frequencies are deleted. However in the HBT class-F amplifiers, because of existence of large base to collector capacitance, the distortion generation mechanism are more complicated. It has been pointed out that self compensation among multi vectors for 3^ order inter-modulation distortion signals occurs. In a view point of sub-harmonic frequency termination conditions, short circuited filtering circuits at bias supplying networks are found to be effective to reduce the distortions for both two tones and W-CDMA signals., 15560292
    2003 - 2004

Industrial Property Rights

  • 電力伝送装置
    Patent right, 石川亮, 本城和彦, 高山洋一郎, 特願2013-126169, Date applied: 14 Jun. 2013, Japanese Patent 6218272号, Date issued: 06 Oct. 2017
  • Transistor Optimum Load Impedance Measrement Device
    Patent right, Ryo Ishikawa, Yoichiro Takayama, Kazuhiko Honjo, 特願2012-187060, Date applied: 27 Aug. 2012, Japanese Patent 6069956, Date issued: 13 Jan. 2017
  • 高効率電力増幅器
    Patent right, 神山仁宏, 石川亮, 本城和彦, 特願2013-531380, Date applied: 29 Aug. 2013, Japanese Patent 5979559, Date issued: 05 Aug. 2016
  • Doherty Amplifier Circuit
    Patent right, Yoichiro Takayama, Kazuhiko Honjo, 特願2012-048448, Date applied: 05 Mar. 2012, 特開2013-187553, Date announced: 19 Sep. 2013, Japanese Patent 5924730, Date issued: 28 Apr. 2016
  • High Efficiency Power Amplifier
    Patent right, Masahiro Kamiyama, Ryo Ishikawa, Kazuhuiko Honjo, PCT/JP2012/071909, Date applied: 29 Aug. 2012, US2014/0225671A1, Date published: 14 Aug. 2014, US Patent US9257948B2, Date issued: 09 Feb. 2016
  • Amplifier Circuit
    Patent right, Kazuhiko Honjo, Yoichiro Takayama, Ryo Ishikawa, 特願2009-130472, Date applied: 11 Jun. 2009, Chinese Patent CN102006019 B, Date issued: 29 Jul. 2015
  • Antenna
    Patent right, Yutaka Aoki, Akira Saitou, Kazuhiko Honjo, 13/819,711, Date applied: 30 Aug. 2011, WO2012/029793, Date announced: 08 Mar. 2012, US Patent US9093757B2, Date issued: 28 Jul. 2015
  • Radio Comminication System and Transmitter
    Patent right, Kazuhiko Honjo, Akira Saitou, 特願2010-241533, Date applied: 27 Oct. 2010, The University of Electro-Communications, 特開2012-095155, Date announced: 17 May 2012, Japanese Patent 5608947, Date issued: 12 Sep. 2014
  • Microwave Harmonic Frequency Treatment Circuit
    Patent right, Kenta Kuroda, Kazuhiko Honjo, 201080041664.2, Date applied: 07 Sep. 2010, The University of Electro-Communications, Chinese Patent CN102498613B, Date issued: 07 Sep. 2014
  • Predistortor Circuit
    Patent right, Yoichiro Takayama, Akihiro Ando, Kazuhiko Honjo, Ryo Ishikawa, 特願2010-151349, Date applied: 01 Jul. 2010, The University of Electro-Communications, 特開2012-015860, Date announced: 19 Jan. 2012, Japanese Patent 5565727, Date issued: 27 Jun. 2014
  • Mirowave Harmonic Frequency Processing Circuit
    Patent right, Kenta Kuroda, Kazuhiko Honjo, 特願2009-217816, Date applied: 18 Sep. 2009, The University of Electro-Communications, 特開2011-66839, Date announced: 31 Mar. 2011, Japanese Patent 5549007, Date issued: 30 May 2014
  • Mirowave Harmonic Processing Circuit
    Patent right, Kenta Kuroda, Kazuhiko Honjo, PCT/JP2010/065288, Date applied: 07 Sep. 2010, The University of Electro-Communications, WO2011/033962, Date announced: 24 Mar. 2011, US2012/0169431A1, Date published: 05 Jul. 2012, US Patent US8680941B2, Date issued: 25 Mar. 2014
  • Amplifier Circuit
    Patent right, Kazuhiko Honjo, Yoichiro Takayama, Ryo Ishikawa, 特願2009-200817, Date applied: 31 Aug. 2009, The University of Electro-Communications, 特開2011-55152, Date announced: 17 Mar. 2011, Japanese Patent 5408616, Date issued: 15 Nov. 2013
  • Multi-frequency Circular Polarized Antenna
    Patent right, Yutaka Aoki, Akira Saitou, Kazuhiko Honjo, 特願2010-193530, Date applied: 31 Aug. 2010, カシオ計算機㈱, 特開2012-054651, Date announced: 15 Mar. 2012, Japanese Patent 5252513, Date issued: 26 Apr. 2013
  • Miniature Beam Controlled Microwave Antenna
    Patent right, Yutaka Aoki, Akira Saitou, Kazuhiko Honjo, 特願2009-203147, Date applied: 02 Sep. 2009, カシオ計算機㈱,電気通信大学, 特開2011-55309, Date announced: 17 Mar. 2011, Japanese Patent 5212949, Date issued: 08 Mar. 2013
  • Harmonic Treatment Circuit and Its Amplifier Application
    Patent right, Ryo Ishikawa, Kazuhiko Honjo, 特願2008-528788, Date applied: 01 Aug. 2007, The University of Electro-Communications, PCT/JP2007/065057, Date announced: 14 Feb. 2008, Japanese Patent 5177675, Date issued: 18 Jan. 2013
  • Multi-frequency Antenna
    Patent right, Yutaka Aoki, Akira Saitou, Kazuhiko Honjo, 特願2009-180009, Date applied: 31 Jul. 2009, カシオ計算機㈱、ワイケーシー㈱, 特開2011-35672, Date announced: 17 Feb. 2011, Japanese Patent 5153738, Date issued: 14 Dec. 2012
  • Harmonic Processing Circuit and Amplifiering Circuit Using the Same
    Patent right, Ryo Ishikawa, Kazuhiko Honjo, 07791741.7, Date applied: 01 Aug. 2007, The University of Electro-Communications, European Patent EP2058943B1, Date issued: 03 Oct. 2012
  • Doherty Amplifier Circuit
    Patent right, Yoichiro Takayama, Kazuhiko Honjo, 特願2008-002603, Date applied: 09 Jan. 2008, 国立大学法人電気通信大学, 特許公開2009-165037, Date announced: 23 Jul. 2009, Japanese Patent 5035846, Date issued: 13 Jul. 2012
  • Harmonic Processing Circuit and Amplifying Circuit Using the Same
    Patent right, Ryo Ishikawa, Kazuhiko Honjo, US12/376556, Date applied: 01 Aug. 2007, The University of Electro-Comminications, US Patent US8164396B2, Date issued: 24 Apr. 2012, PCT/JP2007/065057
  • Harmonic Processing Circuit and Amplifiering Circuit Using the Same
    Patent right, Ryo Ishikawa, Kazuhiko Honjo, 特願20070035811.3, Date applied: 01 Aug. 2007, Chinese Patent CN101517892B, Date issued: 18 Apr. 2012
  • Amplifier Circuit
    Patent right, Kazuhiko Honjo, Yoichiro Takayama, Ryo Ishikawa, 12/872589, Date applied: 31 Aug. 2010, The University of Electro-Communications, US2011/0050350A1, Date announced: 03 Mar. 2011, US Patent US8154348B2, Date issued: 10 Apr. 2012
  • Class F Amplifier Circuit and Class F Load Circuit
    Patent right, Kiyoshi Aikawa, Kazuhiko Honjo, 特願2003-346421, Date applied: 03 Oct. 2003, Sojo University, Faculty of Engineering, Department of Nanoscience, 特開2005-11700, Date announced: 28 Apr. 2005, Japanese Patent 4335633, Date issued: 03 Jul. 2009
  • High Frequency Differetial Mode Filter
    Patent right, Akira Saitou, Kazuhiko Honjo, 特願2005-009029, Date applied: 17 Jan. 2005, 特開2006-197468, Date announced: 27 Jul. 2006, Japanese Patent 4303207, Date issued: 01 May 2009
  • High Frequency Differential Mode Filter
    Patent right, Akira Saitou, Kazuhiko Honjo, 特願2005-082102, Date applied: 22 Mar. 2005, ワイケーシー㈱、キャンパスクリエイト㈱, 特開2006-270235, Date announced: 05 Oct. 2006, Japanese Patent 4287831, Date issued: 03 Apr. 2009
  • Interdigital Filter
    Patent right, Akira Saitou, Kazuhiko Honjo, 特願2004-079886,P2004-079886, Date applied: 19 Mar. 2004, ワイケーシー㈱、キャンパスクリエイト㈱, 特開2005-269321,P2005-269321A, Date announced: 29 Sep. 2005, Japanese Patent 4209352, Date issued: 31 Oct. 2008
  • Differential Mode Band Pass Filters and Their Application to Multi Band Antennas
    Patent right, Akira Saitou, Kazuhiko Honjo, 特願2004-19687,P2004-19687, Date applied: 28 Jan. 2004, ワイケーシー㈱、キャンパスクリエイト㈱, 特開2005-217597,P2005-217597A, Date announced: 11 Aug. 2005, Japanese Patent 4206045, Date issued: 24 Oct. 2008
  • Ultra Wide Band Antenna and Circuit Module
    Patent right, Akira Saitou, Kazuhiko Honjo, 特願2003-365149,P2003-365149, Date applied: 24 Oct. 2003, ワイケーシー㈱、キャンパスクリエイト㈱, 特開2005-130292,P2005-130292A, Date announced: 19 May 2005, Japanese Patent 4176613, Date issued: 29 Aug. 2008
  • Harmonic Frequency Treatment Circuit and Its Amplifier Circuit Application
    Patent right, Yukiko Kobayashi, Kazuhiko Honjo, 特願2002-034513,P2002-034513, Date applied: 12 Feb. 2002, キャンパスクリエイト㈱、小林由紀子、本城和彦, 特開2003-234626,P2003-234626A, Date announced: 22 Aug. 2003, Japanese Patent 4143805, Date issued: 27 Jun. 2008
  • Ultra-Wideband antenna and ultrahigh frequency circuit module
    Patent right, A.Saitou, K.Honjo, 10/971490, Date applied: 22 Oct. 2004, US Patent US7265717B2, Date issued: 04 Sep. 2007
  • Varactor Diode and Semiconductor Integrated Circuit Device
    Patent right, Shinji Nozaki, Hiroshi Morisaki, Kazuo Uchida, Kazuhiko Honjo, Shuichi Kato, 特願2003-183174,P2003-183174, Date applied: 26 Jun. 2003, Sojo University, Faculty of Engineering, Department of Nanoscience, 特開2005-19736,P2005-19736A, Date announced: 20 Jan. 2005, Japanese Patent 4002864, Date issued: 24 Aug. 2007
  • Bandpass filter for differential signal and multifrequency antenna provided with same
    Patent right, Akira Saitou, Kazuhiko Honjo, 11/674499, Date applied: 13 Feb. 2007, YKC Coorp. Canpus Create Coorp., US2007/0126533A1, Date announced: 07 Jun. 2007, US Patent US7250834B2, Date issued: 31 Jul. 2007
  • Bandpass filter for differential signal and multifrequency antenna provided with same
    Patent right, Akira Saitou, Kazuhiko Honjo, 11/045169, Date applied: 27 Jan. 2005, YKC Coorp. Canpus Create Coorp., US2005/0162240A1, Date announced: 28 Jun. 2005, US Patent US7196597B2, Date issued: 27 May 2007
  • Semiconductor Substrate for Multi-Finger Bipolar Device and Their Fabrication Process
    Patent right, Kazuhiko Honjo, Kazuo Uchida, Shuichi Kato, Hiroshi Morisaki, Shinji Nozaki, Takahisa Ichinose, 特願2002-229132, Date applied: 06 Aug. 2003, ㈱ナノテコ、本城和彦、内田和夫, 特開2004-71835, Date announced: 04 Mar. 2004, Japanese Patent 3942984, Date issued: 13 Apr. 2007
  • Circuit for Dealing with Higher Harmonics and Circuit forAmplifing Power Efficiency
    Patent right, Kazuhiko Honjo, 09/679620, Date applied: 05 Oct. 2000, NEC Corporation, US Patent US6396348B1, Date issued: 28 May 2002
  • Microwave and millemterwave T/R module
    Patent right, Kazuhiko Honjo, H3-186159, Date applied: 25 Jul. 1991, H5-67919, Date announced: 19 Mar. 1993, Japanese Patent 3130575, Date issued: 17 Nov. 2000
  • LSI Wiring Structure
    Patent right, Kazuhiko Honjo, H5-207489,H5-207489, Date applied: 23 Aug. 1993, H7-66292,H7-66292, Date announced: 10 Mar. 1995, Japanese Patent 2912131, Date issued: 09 Apr. 1999
  • Transitor Characteristics Analizer
    Patent right, Kazuhiko Honjo, H4-29852,H4-29852, Date applied: 18 Feb. 1992, H5-223885,H5-223885, Date announced: 03 Sep. 1993, Japanese Patent 2861585, Date issued: 11 Dec. 1998
  • Monolithic Millimeterwave Antenna and Its Fablication Process
    Patent right, Kazuhiko Honjo, H3-180687, Date applied: 22 Jul. 1991, H5-29826, Date announced: 05 Feb. 1993, Japanese Patent 2861497, Date issued: 11 Dec. 1998
  • Method of Producing High Temperature Super-conductive Thin Film Device
    Patent right, Kazuhiko Honjo, 712649, Date applied: 11 Sep. 1996, US Patent 5845395, Date issued: 08 Dec. 1998
  • Semiconductor Integrated Circuit
    Patent right, Kazuhiko Honjo, H5-175250,H5-175250, Date applied: 15 Jul. 1993, H7-30401,H7-30401, Date announced: 31 Jan. 1995, Japanese Patent 2833963, Date issued: 02 Oct. 1998
  • Fabrication Process for Super Conducting Circuit
    Patent right, Kazuhiko Honjo, H7-236489,H7-236489, Date applied: 14 Sep. 1995, H9-83021,H9-83021, Date announced: 28 Mar. 1997, Japanese Patent 2822953, Date issued: 04 Sep. 1998
  • Compound Semiconductor Device
    Patent right, Kazuhiko Honjo, H3-119678, Date applied: 24 May 1991, H4-346262, Date announced: 02 Dec. 1992, Japanese Patent 2738165, Date issued: 18 Jan. 1998
  • Super Conducting Base Transistor and Its Driving Method
    Patent right, Kazuhiko Honjo, S63-133474,S63-133474, Date applied: 30 May 1988, H1-302783,H1-302783, Japanese Patent 2687434, Date issued: 22 Aug. 1997
  • High Power Millimeterwave MMIC
    Patent right, Kazuhiko Honjo, H6-286785, Date applied: 21 Nov. 1994, H8-148505, Date announced: 07 Jun. 1996, Japanese Patent 2679650, Date issued: 01 Aug. 1997
  • Wide Band Amplifier
    Patent right, Kazuhiko Honjo, S59-234552,S59-234552, Date applied: 07 Nov. 1984, S61-113306,S61-113306, Date announced: 31 May 1986, Japanese Patent 2674741, Date issued: 18 Jul. 1997
  • Super Conducting Traveling Wave Amplifier
    Patent right, Kazuhiko Honjo, S63-211880,S63-211880, Date applied: 25 Aug. 1988, H2-60215,H2-60215, Date announced: 28 Feb. 1990, Japanese Patent 2671423, Date issued: 11 Jul. 1997
  • Wafer Scale Integrated Circuit
    Patent right, Kazuhiko Honjo, H2-126160,H2-126160, Date applied: 16 May 1990, H4-25046,H4-25046, Date announced: 28 Jan. 1992, Japanese Patent 2621577, Date issued: 04 Apr. 1997
  • Monolithic Microwave and Millimeterwave Array Antenna
    Patent right, Kazuhiko Honjo, H2-126159, Date applied: 16 May 1990, H4-212203, Date announced: 24 Jan. 1992, Japanese Patent 2621576, Date issued: 04 Apr. 1997
  • High Efficiency Power Amplifier
    Patent right, Kazuhiko Honjo, H6-267724,H6-267724, Date applied: 31 Oct. 1994, H8-130424,H8-130424, Date announced: 21 May 1996, Japanese Patent 2616464, Date issued: 17 Mar. 1997
  • Microwave Divide by N Frequency Divider
    Patent right, Kazuhiko Honjo, S60-79657,S60-79657, Date applied: 15 Apr. 1985, S61-238110,S61-238110, Date announced: 23 Oct. 1986, Japanese Patent 2103372, Date issued: 22 Oct. 1996
  • Compound Semiconductor Device and Fabrication Process
    Patent right, Kazuhiko Honjo, S63-222833, Date applied: 05 Sep. 1988, H2-69943, Date announced: 08 Aug. 1990, Japanese Patent 2091095, Date issued: 18 Sep. 1996
  • Compound Semiconductor Device and Fabrication Process
    Patent right, Kazuhiko Honjo, S63-222834,S63-222834, Date applied: 05 Sep. 1988, H2-69944,H2-69944, Date announced: 08 Mar. 1990, Japanese Patent 2091096, Date issued: 18 Sep. 1996
  • Microwave and Millimeterwave High Power Transistor
    Patent right, Kazuhiko Honjo, H1-258721, Date applied: 05 Oct. 1989, H3-121606, Date announced: 23 May 1991, Japanese Patent 2077383, Date issued: 09 Aug. 1996
  • Monolithic Microwave Integrated Circuit
    Patent right, Kazuhiko Honjo, S59-213876,S59-213876, Date applied: 12 Oct. 1984, S61-91955,S61-91955, Date announced: 10 May 1986, Japanese Patent 2067087, Date issued: 10 Jul. 1996
  • Heterojunction Bipolar Transistor
    Patent right, Kazuhiko Honjo, S61-236537,S61-236537, Date applied: 03 Oct. 1986, S63-90850,S63-90850, Date announced: 21 Apr. 1988, Japanese Patent 2534684, Date issued: 27 Jun. 1996
  • Fabrication Process for Semiconductor Device
    Patent right, Kazuhiko Honjo, S59-31727,S59-31727, Date applied: 11 Oct. 1984, NEC Corporation, S60-176239,S60-176239, Date announced: 08 May 1986, 特表平5-027247, Date published: 20 Apr. 1993, Japanese Patent 1832623, Date issued: 10 Jun. 1996
  • Fabrication Process for Semiconductor Device(Self Alignment)
    Patent right, Kazuhiko Honjo, 特願S59-21274, Date applied: 11 Oct. 1984, 特開S61-90471, Date announced: 08 May 1986, 特公平7-93318, Date published: 09 Oct. 1995, Japanese Patent 205401, Date issued: 01 Jun. 1996
  • Fabrication Process for Semiconductor Device(Side Etching)
    Patent right, Kazuhiko Honjo, 特願S59-120412, Date applied: 26 Dec. 1984, 特開S60-263479, Date announced: 26 Dec. 1985, 特公平7-89558, Date published: 27 Sep. 1995, Japanese Patent 2058399, Date issued: 01 Jun. 1996
  • Stabilizing Circuit for High Power Microwave and Millimeterwave Transistor
    Patent right, Kazuhiko Honjo, H1-337414, Date applied: 25 Dec. 1989, H3-228410, Date announced: 09 Oct. 1991, Japanese Patent 2050191, Date issued: 19 May 1996
  • Microwave Dynamic Frequency Divider
    Patent right, Kazuhiko Honjo, S59-110164,S59-110164, Date applied: 30 May 1984, S60-253308,S60-253308, Date announced: 14 Dec. 1985, Japanese Patent 2051163, Date issued: 10 May 1996
  • High Tc Super Conducting Microstrip Line
    Patent right, Kazuhiko Honjo, H1-199340,H1-199340, Date applied: 02 Aug. 1989, H3-64101,H3-64101, Date announced: 19 Mar. 1991, Japanese Patent 2508281, Date issued: 16 Apr. 1996
  • High Efficiency Amplifier Circuit
    Patent right, Kazuhiko Honjo, H5-233010,H5-233010, Date applied: 20 Sep. 1993, H7-94974,H7-94974, Date announced: 07 Apr. 1995, Japanese Patent 2513146, Date issued: 09 Apr. 1996
  • Microwave Amplifier Circuit
    Patent right, Kazuhiko Honjo, H3-81177,H3-81177, Date applied: 22 Mar. 1991, H6-45848,H6-45848, Date announced: 18 Feb. 1994, Japanese Patent 2500541, Date issued: 13 Mar. 1996
  • Microwave Analog Frequency Divider
    Patent right, Kazuhiko Honjo, S59-110166,S59-110166, Date applied: 30 May 1984, S60-253310,S60-253310, Date announced: 14 Dec. 1985, Japanese Patent 2020715, Date issued: 19 Feb. 1996
  • Amplifier Circuit having Impedance Matching Circuit
    Patent right, Kazuhiko Honjo, 309393, Date applied: 20 Sep. 1994, US Patent 5473281, Date issued: 05 Dec. 1995
  • Semiconductor Integrated Circuit having an Equal Propagation Delay
    Patent right, Kazuhiko Honjo, 266587, Date applied: 28 Jun. 1994, US Patent 5448208, Date issued: 05 Sep. 1995
  • 3-Dimensional Semiconductor Integrated Circuit
    Patent right, Kazuhiko Honjo, S60-142273,S60-142273, Date applied: 28 Jun. 1985, S62-2646,S62-2646, Date announced: 08 Jan. 1987, Japanese Patent 1948032, Date issued: 10 Jul. 1995
  • Two Dimensional Electron GaAs FET
    Patent right, Kazuhiko Honjo, S60-145052,S60-145052, Date applied: 14 Oct. 1985, S62-5668,S62-5668, Date announced: 12 Jan. 1987, Japanese Patent 1936493, Date issued: 26 May 1995
  • Bipolar Transistor and Fabrication Process
    Patent right, Kazuhiko Honjo, S62-219445,S62-219445, Date applied: 01 Sep. 1987, H1-61058,H1-61058, Date announced: 08 Mar. 1989, Japanese Patent 1931881, Date issued: 12 May 1995
  • Wide-Band High-Efficiency Amplifier
    Patent right, Kazuhiko Honjo, S57-50580,S57-50580, Date applied: 29 Mar. 1982, S58-168308,S58-168308, Date announced: 04 Oct. 1983, Japanese Patent 1925339, Date issued: 25 Apr. 1995
  • Microwave Millimeter Wave Transmitting and Receiving Module
    Patent right, Kazuhiko Honjo, 917240, Date applied: 23 Jul. 1992, NEC, US Patent 5404581, Date issued: 04 Apr. 1995
  • Fabrication Process for Permeable Base Transistor
    Patent right, Kazuhiko Honjo, S62-197668,S62-197668, Date applied: 07 Aug. 1987, H1-41275,H1-41275, Date announced: 13 Feb. 1989, Japanese Patent 1910753, Date issued: 09 Mar. 1995
  • Microwave Receiver
    Patent right, Kazuhiko Honjo, S58-44749,S58-44749, Date applied: 17 Mar. 1983, S59-171226,S59-171226, Date announced: 27 Sep. 1984, Japanese Patent 1903406, Date issued: 08 Feb. 1995
  • Fabrication Process for Lateral Bipolar Transistor
    Patent right, Kazuhiko Honjo, S62-200206,S62-200206, Date applied: 10 Aug. 1987, H1-42860,H1-42860, Date announced: 15 Feb. 1989, Japanese Patent 1896204, Date issued: 23 Jan. 1995
  • Heterojunction Bipolar Transistor
    Patent right, Kazuhiko Honjo, S62-158101,S62-158101, Date applied: 24 Jun. 1987, S64-2359,S64-2359, Date announced: 06 Jan. 1989, Japanese Patent 1896197, Date issued: 23 Jan. 1995
  • High Tc Super Conducting MMIC
    Patent right, Kazuhiko Honjo, S62-191798,S62-191798, Date applied: 30 Jul. 1987, H1-35935,H1-35935, Date announced: 07 Feb. 1989, Japanese Patent 1891114, Date issued: 07 Dec. 1994
  • Bllistic Heterojunction Bipolar Transistor
    Patent right, Kazuhiko Honjo, S61-307044,S61-307044, Date applied: 22 Dec. 1986, S63-158873,S63-158873, Date announced: 01 Jul. 1988, Japanese Patent 1891031, Date issued: 07 Dec. 1994
  • Fabrication Process for Bipolar Transistor
    Patent right, Kazuhiko Honjo, S61-271320,S61-271320, Date applied: 05 Sep. 1986, S63-124465,S63-124465, Date announced: 27 May 1988, Japanese Patent 1879197, Date issued: 07 Oct. 1994
  • Microwave Monolithic Mixer
    Patent right, Kazuhiko Honjo, S58-126727,S58-126727, Date applied: 12 Jul. 1983, S60-18006,S60-18006, Date announced: 30 Jan. 1985, Japanese Patent 1871072, Date issued: 06 Sep. 1994
  • Super Conducting Base Transistor
    Patent right, Kazuhiko Honjo, S62-336038,S62-336038, Date applied: 29 Dec. 1987, H1-175780,H1-175780, Date announced: 12 Jul. 1989, Japanese Patent 1862735, Date issued: 08 Aug. 1994
  • Fabrication Process for Bipolar Transistor
    Patent right, Kazuhiko Honjo, S61-210197,S61-210197, Date applied: 13 Nov. 1986, S63-65670,S63-65670, Date announced: 24 Feb. 1988, Japanese Patent 1855611, Date issued: 07 Jul. 1994
  • Fabrication Process for Semiconductor Device(Via Etching)
    Patent right, Kazuhiko Honjo, 特願S59-92137, Date applied: 09 May 1984, 特開S60-235428, Date announced: 22 Nov. 1980, 特表平27248, Date published: 20 Apr. 1993, Japanese Patent 1822445, Date issued: 21 Jun. 1994
  • Microwave Frequency Divider
    Patent right, Kazuhiko Honjo, S59-32868,S59-32868, Date applied: 23 Feb. 1984, S60-177707,S60-177707, Date announced: 11 Sep. 1985, Japanese Patent 1851878, Date issued: 21 Jun. 1994
  • Hybrid Type Transistor Amplifier
    Patent right, Kazuhiko Honjo, S57-45869,S57-45869, Date applied: 23 Mar. 1982, S58-162111,S58-162111, Date announced: 26 Sep. 1983, Japanese Patent 1851823, Date issued: 21 Jun. 1994
  • 3-Dimensional Compound Semiconductor Integrated Circuit
    Patent right, Kazuhiko Honjo, S60-152902,S60-152902, Date applied: 11 Jul. 1985, S62-13063,S62-13063, Date announced: 21 Jan. 1987, Japanese Patent 1848259, Date issued: 07 Jun. 1994
  • Two Dimensional Electron Gas FET
    Patent right, Kazuhiko Honjo, S60-229253,S60-229253, Date applied: 01 Jul. 1985, S62-86867,S62-86867, Date announced: 21 Apr. 1987, Japanese Patent 1832713, Date issued: 29 Mar. 1994
  • Monolithic Integrated Circuit Device
    Patent right, Kazuhiko Honjo, 699279, Date applied: 13 May 1991, US Patent 5202752, Date issued: 13 Apr. 1993
  • 半導体装置の製造方法(アニール)
    Patent right, 本城 和彦, 特願S58-121313, Date applied: 04 Jul. 1983, 特開S60-14476, Date announced: 25 Jan. 1985, 特表平4-34823, Date published: 09 Jun. 1992, 特許第1752671号, Date issued: 08 Apr. 1993
  • Hybrid Field Effect Transistor Amplifier
    Patent right, Kazuhiko Honjo, S57-51689,S57-51689, Date applied: 09 Apr. 1982, S58-155120,S58-155120, Date announced: 17 Oct. 1983, Japanese Utirity Model Registration 1949260, Date issued: 19 Jan. 1993
  • Stabilized Circuit of High Output Power Transistor for Microwave and Millimeterwave
    Patent right, Kazuhiko Honjo, 628474, Date applied: 14 Dec. 1990, US Patent 5177452, Date issued: 05 Jan. 1993
  • Semiconductor Wafer Annealing Method
    Patent right, Kazuhiko Honjo, S58-121312,S58-121312, Date applied: 04 Jul. 1983, S60-14443,S60-14443, Date announced: 25 Jan. 1985, Japanese Patent 1679221, Date issued: 13 Jul. 1992
  • Heterojunction Bipolar Transistor with Ballistic Operation
    Patent right, Kazuhiko Honjo, Shinichi Tanaka, 87119044.3, Date applied: 22 Dec. 1987, European Patent EPC0273363, Date issued: 08 Jul. 1992
  • Wideband Transistor Amplifier
    Patent right, Kazuhiko Honjo, 実願S55-91845, Date applied: 30 Jun. 1980, S57-15510, Date announced: 26 Jan. 1982, Japanese Utirity Model Registration 1866549, Date issued: 12 Sep. 1991
  • Hybrid Semiconductor Device Implemented by Combination of Heterojunction Bipolar Transistor and Field Effect Transistor
    Patent right, Kazuhiko Honjo, 401161, Date applied: 01 Sep. 1989, US Patent 5012318, Date issued: 30 Apr. 1991
  • Meander Transmission Line
    Patent right, Kazuhiko Honjo, S57-18617,S57-18617, Date applied: 08 Feb. 1982, S58-136108,S58-136108, Date announced: 13 Aug. 1983, Japanese Patent 1598967, Date issued: 28 Jan. 1991
  • Monolithic Microwave Transistor
    Patent right, Kazuhiko Honjo, S58-5692,S58-5692, Date applied: 17 Jan. 1983, S59-131208,S59-131208, Date announced: 28 Jul. 1984, Japanese Patent 1596514, Date issued: 27 Dec. 1990
  • Microwave Low Noise Amplifier
    Patent right, Kazuhiko Honjo, S57-132617,S57-132617, Date applied: 29 Jul. 1982, S59-23609,S59-23609, Date announced: 07 Feb. 1984, Japanese Patent 1594121, Date issued: 14 Dec. 1990
  • Low Noise Wide Band FET Amplifer
    Patent right, Kazuhiko Honjo, S56-94480,S56-94480, Date applied: 18 Jun. 1981, S57-208709,S57-208709, Date announced: 21 Dec. 1982, Japanese Patent 1591191, Date issued: 30 Nov. 1990
  • Three dimensional integrated circuit
    Patent right, Kazuhiko Honjo, 86109293.0, Date applied: 08 Jul. 1986, European Patent EPC0208294, Date issued: 28 Nov. 1990
  • Field Effect Transistor Circuit
    Patent right, Kazuhiko Honjo, 実願S55-74098, Date applied: 29 May 1980, 実開S56-176517, Date announced: 26 Dec. 1981, 実案公告H2-1492, Date published: 18 Jan. 1990, Japanese Utirity Model registration 1840566, Date issued: 21 Nov. 1990
  • Field Effect Transistor
    Patent right, Kazuhiko Honjo, S56-14970,S56-14970, Date applied: 21 Sep. 1981, S58-50780,S58-50780, Date announced: 25 Mar. 1983, Japanese Patent 1588485, Date issued: 19 Nov. 1990
  • Spiral Transmission Line
    Patent right, Kazuhiko Honjo, S57-18616,S57-18616, Date applied: 08 Feb. 1982, S58-136107,S58-136107, Date announced: 13 Aug. 1983, Japanese Patent 1576076, Date issued: 24 Aug. 1990
  • Heterojunction Bipolar Transistor with Ballistic Operation
    Patent right, Kazuhiko Honjo, Shinichi Tanaka, 136589, Date applied: 22 Dec. 1987, US Patent 4929997, Date issued: 29 May 1990
  • Selective Annealing Method for Semiconductor Wafer
    Patent right, 本城和彦, S58-121318,S58-121318, Date applied: 04 Jul. 1983, S60-14444,S60-14444, Date announced: 25 Jan. 1985, Japanese Patent 1555155, Date issued: 23 Apr. 1990
  • Ultra Wide Band FET Amplifier
    Patent right, Kazuhiko Honjo, Yoichiro Takayama, S55-74097,S55-74097, Date applied: 29 May 1980, S56-176516,S56-176516, Date announced: 26 Dec. 1981, Date published: 08 May 1989, Japanese Utirity Model Registration 1808155, Date issued: 26 Feb. 1990
  • Ultra Wide Band High Power Transistor Amplifier
    Patent right, Kazuhiko Honjo, S55-132540,S55-132540, Date applied: 24 Sep. 1980, S57-57014,S57-57014, Date announced: 06 Apr. 1982, Japanese Patent 1472305, Date issued: 27 Dec. 1988
  • Three-Dimensional Integrated Circuit
    Patent right, Kazuhiko Honjo, 882676, Date applied: 07 Jul. 1986, NEC Coorporation, US Patent 4779127, Date issued: 18 Oct. 1988
  • Monolithic Microwave Integrated Circuit Device Using High Temperature Superconductive Material
    Patent right, Kazuhiko Honjo, 223525, Date applied: 25 Jul. 1988, US Patent 4837536, Date issued: 06 Jun. 1988
  • High Accuracy Infrared Ray Radiation Measurement Method
    Patent right, Kazuhiko Honjo, S54-157684,S54-157684, Date applied: 13 Jul. 1979, S56-79925,S56-79925, Date announced: 30 Jun. 1981, Japanese Patent 1436753, Date issued: 25 Apr. 1988
  • Driving Method for Ultra High Frequency High Power FET Amplifier
    Patent right, Kazuhiko Honjo, S55-12200,S55-12200, Date applied: 04 Feb. 1980, S56-109011,S56-109011, Date announced: 29 Aug. 1981, Japanese Patent 1431029, Date issued: 24 Mar. 1988
  • Ultra High Frequency Operation Analizer for Transistor
    Patent right, Kazuhiko Honjo, S54-56811,S54-56811, Date applied: 09 May 1979, S55-148435,S55-148435, Date announced: 19 Nov. 1980, Japanese Patent 1427121, Date issued: 25 Feb. 1988
  • Bias Supply Circuit for Ultra High Frequency Semiconductor Device
    Patent right, Kazuhiko Honjo, S54-2637,S54-2637, Date applied: 20 Oct. 1978, S55-95347,S55-95347, Date announced: 19 Jul. 1980, Japanese Patent 1407656, Date issued: 27 Oct. 1987
  • Capacitor for Ultra High Frequency Semiconductor Device
    Patent right, 本城和彦, S55-36118,S55-36118, Date applied: 19 Mar. 1980, S56-139231,S56-139231, Date announced: 21 Oct. 1981, Date published: 21 Oct. 1981, Japanese Utirity Model Registration 1678438, Date issued: 14 May 1987
  • Ultra High frequency Transitor Amplifier
    Patent right, Kazuhiko Honjo, S53-100734,S53-100734, Date applied: 19 Dec. 1978, S55-27745,S55-27745, Date announced: 28 Feb. 1980, Japanese Patent 1373752, Date issued: 07 Apr. 1987
  • マイクロストリップ線路型スタブ
    Patent right, 本城 和彦, 実願S55-131319, Date applied: 16 Sep. 1980, 実開S57-56002, Date announced: 01 Apr. 1982, 実登1669350号, Date issued: 12 Feb. 1987
  • Ultra High frequency Transitor Amplifier
    Patent right, Kazuhiko Honjo, S53-160832,S53-160832, Date applied: 17 Aug. 1978, S55-83310,S55-83310, Date announced: 23 Jun. 1980, Japanese Patent 1354583, Date issued: 14 Dec. 1986
  • DC Bias Supply Circuit for Ultra High Frequency Device
    Patent right, 小川忠幸, 本城和彦, S55-122007, Date applied: 28 Aug. 1980, NEC Corporation, S57-46316, Date announced: 15 Mar. 1982, S61-14175, Date published: 02 May 1986, Japanese Utirity Model Registration 1660559, Date issued: 26 Nov. 1986
  • Impedance Matching Circuit for Ultra High Frequency Semiconductor Device
    Patent right, Kazuhiko Honjo, Yoichiro Takayama, S53-133286,S53-133286, Date applied: 31 Aug. 1978, S55-51084,S55-51084, Date announced: 03 Apr. 1980, 昭57--18767, Date published: 03 Apr. 1980, Japanese Utirity Model Registration 1642152, Date issued: 26 Jun. 1986
  • Ultra High Frequency Transistor Analyzer
    Patent right, Kazuhiko Honjo, S53-71912,S53-71912, Date applied: 13 Jun. 1978, S54-162474,S54-162474, Japanese Patent 1349923, Date issued: 14 Jan. 1986
  • 方向性結合器
    Patent right, 本城 和彦, 実願S54-2549, Date applied: 12 Jan. 1979, 実開S55-102205, Date announced: 16 Jul. 1980, 実登1617692号, Date issued: 25 Nov. 1985
  • 超高周波半導体装置用バイアス回路
    Patent right, 本城 和彦, 実願S53-144362, Date applied: 12 Jan. 1979, 実開S55-61301, Date announced: 25 Apr. 1980, 実登1569255号, Date issued: 28 Sep. 1984
  • 超高周波回路
    Patent right, 本城和彦, 高山洋一郎, 実願S52-101571, Date applied: 28 Jul. 1977, 実開S54-28341, Date announced: 24 Feb. 1979, 実公S57-17525, Date published: 23 Apr. 1982, 実登1504918号, Date issued: 26 Aug. 1983
  • 超高周波半導体装置
    Patent right, 本城和彦, 高山洋一郎, 実願S52-158583, Date applied: 26 Nov. 1977, 実開S54-86951, Date announced: 20 Jun. 1979, 実公S57-22439, Date published: 15 May 1982, 実登1470179号, Date issued: 14 Jan. 1983
  • 超高周波半導体装置用インピーダンス整合回路(内部整合)
    Patent right, 本城和彦, 加藤英彦, 実願S52-40010, Date applied: 30 Mar. 1977, 実開S53-134633, Date announced: 25 Oct. 1978, 実公S57-18767, Date published: 20 Apr. 1982, 実登1465686号, Date issued: 14 Dec. 1982