博士（工学）, 早稲田大学

catalysis

First-principles calculations

Surface structure of solids

Electronic properties in general

Thin films

Crystal structure in general;crystallography

Dielectric properties and materials

Magnetic properties and materials

Methods of structure determination; diffraction crystallography

Crystal growth

Electronic structure

固体の表面構造

電子物性一般

薄膜

結晶構造一般；結晶学

誘電体

磁性

構造決定法；回折結晶学

結晶成長

電子構造

Informatics, Computational science

Natural sciences, Semiconductors, optical and atomic physics

Nanotechnology/Materials, Nanostructure physics

Nanotechnology/Materials, Crystal engineering

Nanotechnology/Materials, Thin-film surfaces and interfaces

01 Apr. 2012
電気通信大学大学院情報理工学研究科先進理工学専攻, 教授

01 Apr. 2007 - 31 Mar. 2012
電気通信大学電気通信学部電子工学科, 准教授

01 Apr. 2008 - 30 Sep. 2008
東京大学物性研究所客員部門, 准教授

01 Apr. 2006 - 31 Mar. 2007
電気通信大学電気通信学部電子工学科, 助教授

Mar. 2001 - 31 Mar. 2006
電気通信大学電気通信学部電子工学科, 助手

Apr. 1998 - Feb. 2001
理化学研究所, 基礎科学特別研究員

Jun. 1997 - Mar. 1998
早稲田大学材料技術研究所, 専任客員講師

Apr. 1997 - May 1997
日本学術振興会, 特別研究員（PD）

Apr. 1995 - Mar. 1997
早稲田大学理工学部, 助手

Mar. 1996
Waseda University, Graduate School, Division of Science and Engineering, 材料工学専攻

Mar. 1993
Waseda University, Graduate School, Division of Science and Engineering, 材料工学専攻

Mar. 1991
Waseda University, Faculty of Science and Engineering, 材料工学科

01 Apr. 1984 - 31 Mar. 1987
大分県立大分舞鶴高等学校

Apr. 2024 - Present
常務理事, 日本表面真空学会, Society

May 2022 - Present
ジェンダー委員会委員, 日本工学アカデミー, Society

Apr. 2022 - Present
協議員会委員, 日本表面真空学会, Society

Mar. 2022 - Present
人材育成・教育企画委員会委員, 応用物理学会, Society

Jan. 2018 - Apr. 2024
委員, 日本表面真空学会「表面と真空」編集委員会, Society

Apr. 2022 - Mar. 2023
論文賞委員会委員, 日本物理学会, Society

Mar. 2013 - Mar. 2022
会員サービス委員会, 応用物理学会, Society

2008 - 31 Dec. 2017
表面科学編集委員, 表面科学会, Society

Apr. 2017
JJAP/APEX編集運営委員会 編集運営委員, 応用物理学会 JJAP/APEX編集運営委員会, Society

Mar. 2016 - Mar. 2017
応用物理学会 論文誌・企画編集委員会 副委員長, 応用物理学会 論文誌・企画編集委員会, Society

Mar. 2015 - Mar. 2017
Executive Editor, IoPP JJAP/APEX Editorial Board, Others

Mar. 2015 - Mar. 2017
JJAP/APEX編集運営委員会 副委員長, 応用物理学会 JJAP/APEX編集運営委員会, Society

Apr. 2015 - Mar. 2016
代議員推薦委員会委員, 応用物理学会, Society

Apr. 2015 - Mar. 2016
運営委員, 男女共同参画学協会連絡会, Society

Mar. 2014 - Mar. 2016
応用物理学会 男女共同参画委員会 委員, 応用物理学会 男女共同参画委員会, Society

20 Feb. 2015 - 19 Feb. 2016
第５４期 諮問委員, 応用物理学会 諮問委員会, Society

Mar. 2014 - Mar. 2015
常務理事, 応用物理学会, Society

Mar. 2014 - Mar. 2015
会員サービス委員会委員長, 応用物理学会, Society

2013 - Mar. 2015
代議員, 応用物理学会, Society

Mar. 2013 - Mar. 2014
会員サービス委員会副委員長, 応用物理学会, Society

Mar. 2013 - Mar. 2014
理事, 応用物理学会, Society

Mar. 2010 - Mar. 2011
代議員選考委員会委員, 応用物理学会, Society

2007 - 2011
講演大会運営委員会委員, 表面科学会, Society

Oct. 2008 - Mar. 2010
アカデミックロードマップ人材育成クラスターWG委員, 応用物理学会, Society

Mar. 2008 - Mar. 2010
人材育成・男女共同参画委員会副委員長, 応用物理学会, Society

2006 - 2009
代議員, 応用物理学会, Society

Nov. 2008
タスクフォース委員会, 応用物理学会, Society

Apr. 2007 - Mar. 2008
人材育成・男女共同参画委員会幹事長, 応用物理学会, Society

2006 - 2008
日本物理学会誌新著紹介小委員会委員, 日本物理学会, Society

Apr. 2007 - Aug. 2007
暮らしを支える科学と技術展企画実行WG, 応用物理学会, Society

Apr. 2007
将来ビジョン・ロードマップワーキンググループ委員, 応用物理学会, Society

Feb. 2006 - Mar. 2007
人材育成・男女共同参画委員会副幹事長, 応用物理学会, Society

2005 - 2007
プログラム編集委員, 日本物理学会, Society

2003 - Mar. 2006
男女共同参画委員会委員, 応用物理学会, Society

2005 - 2006
領域９世話人, 日本物理学会, Society

2006
講演奨励賞審査委員, 応用物理学会, Society

2005
親子の科学実験教室ワーキンググループ委員, 応用物理学会, Society

2002
学会奨励賞審査委員, 表面科学会, Society

2002
Physical Review / Physical Review Letters, permanent referee, Society

Oct. 2023
American Vacuum Society, 学生が第一著者の講演の中で優れた内容のものについて、旅費の支援（$250）をする賞。
AVS Dorothy M. and Earl S. Hoffman Travel Grant, Akira Sumiyoshi;Jun Nakamura
International society, United States

Dec. 2021
USA
ACS Appl. Energy. Mat. Cover art, Hiroshi Yabu;Koki Nakamura;Yasutaka Matsuo;Yutaro Umejima;Haruyuki Matsuyama;Jun Nakamura;Koju Ito
Official journal, United States

Jul. 2020
Marquis Who's Who
USA
Marquis Who's Who in the World and Marquis Who's Who in America
Others, United States

Oct. 2019
AVS
USA
AVS Dorothy M. and Earl S. Hoffman Travel Grant, Takayuki Suga;Jun Nakamura
International society, United States

Jul. 2019
Marquis Who's Who
USA
Marquis Who's Who in the World and Marquis Who's Who in America
Others, United States

May 2019
Papantla市議会, Mexico合衆国Veracruz州Papantla市で開催された、Mexico物理学会固体物理学会学術講演会において基調講演を行ったことに対する表彰。
Mexico
Reconocimiento, Jun Nakamura
Others

Oct. 2018
ＡVS
USA
AVS Dorothy M. and Earl S. Hoffman Travel Grant, Shunji Goto;Jun Nakamura
International society, United States

Oct. 2018
AVS
USA
AVS Dorothy M. and Earl S. Hoffman Travel Grant, Yosuke Kikuchi;Jun Nakamura
International society, United States

Aug. 2018
Marquis Who's Who
USA
Marquis Who's Who in the World and Marquis Who's Who in America
Others, United States

Mar. 2018
応用物理学会
Japan
APEX/JJAP Editorial Contribution Award, Jun Nakamura
Official journal, Japan

Nov. 2017
Graduate Student Sessionm Best presentation Award, Rifan Agustian;Akira Akaishi;Jun Nakamura
International society

Aug. 2017
Marquis Who's Who
USA
Marquis Who's Who in the World and Marquis Who's Who in America
Others, United States

Jun. 2017
Germany
The best presentation awards, 2nd place (SPM-5, The 5th International Workshop on Solution Plasma and Molecular Technologies), Rifan Agustian;Akira Akaishi;Jun Nakamura
International society, Germany

Aug. 2015
Marquis Who's Who
USA
Marquis Who's Who in the World and Marquis Who's Who in America
United States

Apr. 2015
応用物理学会
APEX/JJAP Editorial Contribution Award, Jun Nakamura
Official journal, Japan

Mar. 2015
応用物理学会
応用物理学会感謝状, 中村淳
Others, Japan

Aug. 2014
Marquis Who's Who
USA
Marquis Who's Who in the World and Marquis Who's Who in America
United States

Aug. 2013
Marquis Who's Who
USA
Marquis Who's Who in the World and Marquis Who's Who in America
United States

Mar. 2013
永井科学技術財団
第３０回財団賞・研究奨励金・共同研究奨励金
Publisher

Aug. 2012
Marquis Who's Who
USA
Marquis Who's Who in the World and Marquis Who's Who in America
United States

Feb. 2012
日本表面科学会
日本表面科学会講演奨励賞

Aug. 2011
Marquis Who's Who
USA
Marquis Who's Who in the World and Marquis Who's Who in America
United States

Feb. 2011
電気通信大学
平成２２年度電気通信大学優秀教員賞

Aug. 2010
Marquis Who's Who
USA
Marquis Who's Who in the World and Marquis Who's Who in America
United States

Jan. 2010
American Vacuum Society
USA
Young Scientist Awards
United States

Nov. 2009
Marquis Who's Who
USA
Marquis Who's Who in the World and Marquis Who's Who in America
United States

Jan. 2009
American Vacuum Society
USA
Young Scientist Awards
United States

Nov. 2008
応用物理学会
講演奨励賞

Nov. 2008
Marquis Who's Who
USA
Marquis Who's Who in the World and Marquis Who's Who in America
United States

Jan. 2008
35th Conference on the Physics and Chemistry of Semiconductor Interfaces
USA
Young Scientist Awards
United States

Nov. 2007
Marquis Who's Who
USA
25th Silver Anniversary Edtion of Marquis Who's Who in the World
United States

Jan. 2006
33rd Conference on the Physics and Chemistry of Semiconductor Interfaces
USA
Young Scientist Awards
United States

Dec. 2000
日本MRS奨励賞

Apr. 1994
早稲田大学
早稲田大学大隈記念奨学生

Apr. 1993
早稲田大学
早稲田大学大隈記念奨学生

Atomic structure of the Se-passivated GaAs(001) surface revisited
Akihiro Ohtake; Takayuki Suga; Shunji Goto; Daisuke Nakagawa; Jun Nakamura
Scientific Reports, Springer Science and Business Media LLC, 13, 1, 24 Oct. 2023, Abstract

We present a combined experimental and theoretical study of the Se-treated GaAs(001)-($$2\times 1$$) surface. The ($$2\times 1$$) structure with the two-fold coordinated Se atom at the outermost layer and the three-fold coordinated Se atom at the third layer was found to be energetically stable and agrees well with the experimental data from scanning tunneling microscopy, low energy electron diffraction, and x-ray photoelectron spectroscopy. This atomic geometry accounts for the improved stability of the Se-treated surface against the oxidation. The present result allows us to address a long-standing question on the structure of the Se-passivated GaAs surface, and will leads us to a more complete understanding of the physical origin of the electrical and chemical passivation of Se-treated GaAs surface.
Scientific journal

Hydrogen storage on tin carbide monolayers with transition metal adatoms
Lucia G. Arellano; Alma L. Marcos-Viquez; Francisco De Santiago; Álvaro Miranda; Luis A. Pérez; Jun Nakamura; Miguel Cruz-Irisson
International Journal of Hydrogen Energy, Elsevier BV, Apr. 2023, Peer-reviwed
Scientific journal

ナノスケールのチューリング・パターン
中村淳
Lead, 表面と真空, 66, 3, 188-188, 10 Mar. 2023, Peer-reviwed

Theoretical prediction of two-dimensional II-V compounds
Lucia G. Arellano; Takayuki Suga; Taichi Hazama; Taichi Takashima; Miguel Cruz-Irisson; Jun Nakamura
Last, PHYSICAL REVIEW MATERIALS, AMER PHYSICAL SOC, 7, 1, Jan. 2023, Peer-reviwed, Graphene has attracted significant attention as a pioneer of two-dimensional zero gap semiconductors, but the development of new two-dimensional materials with a finite band gap has been actively pursued. In this study, the structural stability of double bilayers (DBs) of group II-V compounds (II: Be, Zn, and Cd; V: P, As, and Sb) has been systematically investigated using first-principles calculations based on density functional theory. The thermodynamic calculations have confirmed that BeP, BeAs, ZnP, and ZnAs can be produced through exothermic reactions from their constituent bulk systems. It has also been confirmed that all the compounds have phonon dynamical stabilities. Only CdP and CdAs have been found to have an AB-stacked DB structure with threefold symmetry, while the other compounds have AB'-stacked DB structure with broken symmetry. The difference in atomic radii between group II and group V results in the so-called size effect, which determines the stacking pattern. The structural stability of II-V DB thin films is explained by analogy with the surface structural stability of compound semiconductors: The change in the atomic arrangement of the DB structure alters the electronegativity of the surface orbitals of the II-V thin film, which does not result in any unsaturated bonds, i.e., no metallic bands across the Fermi level appear. The various DB II-V compounds proposed in this study will join the ranks of atomic-level 2D semiconductor materials.
Scientific journal, English

Tunable electronic properties of silicon nanowires as sodium-battery anodes
Lucia Guadalupe Arellano; Fernando Salazar; Álvaro Miranda; Alejandro Trejo; Luis Antonio Pérez; Jun Nakamura; Miguel Cruz-Irisson
Int. J. Energy Res., Wiley, 46, 17151-17162, 15 Jul. 2022, Peer-reviwed
Scientific journal, English

Size optimization of a N-doped graphene nanocluster for the oxygen reduction reaction
Haruyuki Matsuyama; Jun Nakamura
Corresponding, ACS Omega, ACS, 7, 3093-3098, 12 Jan. 2022, Peer-reviwed
Scientific journal, English

Pyrolysis-Free Oxygen Reduction Reaction (ORR) Electrocatalysts Composed of Unimolecular Layer Metal Azaphthalocyanines Adsorbed onto Carbon Materials
Hiroshi Yabu; Koki Nakamura; Yasutaka Matsuo; Yutaro Umejima; Haruyuki Matsuyama; Jun Nakamura; Koju Iton
ACS Appl. Energy Mat., ACS, 4, 12, 14380-14389, 27 Dec. 2021, Peer-reviwed, The oxygen reduction reaction (ORR) at the cathode is one of the critical bottlenecks in the energy conversion process in polymer electrolyte fuel cells (PEFCs) and metal-air batteries. An iron azaphthalocyanine unimolecular layer (Fe-AZUL) adsorbed onto a carbon substrate exhibited high ORR activity as an alternative of Pt supported on carbon black (Pt/C) electrocatalyst. We herein report the synthesis of various AzPc molecules with different peripheral structures and complex metals, as well as measurements of the ORR activities of catalysts containing the synthesized molecules and carbons. The catalytic activities were characterized by electrochemical analysis, density functional theory (DFT) calculations, and measurements of ionization potential (IP) values. From the results, the IP values on Ketjen Black (KB) were found to be one of the significant indicators for high ORR activities, providing a guideline for the development of high-performance electrocatalysts.
Scientific journal, English

Ab initio study of hydrogen storage on metal-decorated GeC monolayers
Lucia Guadalupe Arellano; Francisco De Santiago; Álvaro Miranda; Luis Antonio Pérez; Fernando Salazar; Alejandro Trejo; Jun Nakamura; Miguel Cruz-Irisson
International Journal of Hydrogen Energy, Elsevier BV, 46, 57, 29261-29271, May 2021, Peer-reviwed
Scientific journal, English

Edge-State-Induced Stacking of Zigzag Graphene Nanoribbons
T.Asano; J.Nakamura
Corresponding, ACS Omega, American Chemical Society, 4, 22035-22040, 09 Dec. 2019, Peer-reviwed
Scientific journal, English

Fe azaphthalocyanine unimolecular layers (Fe AzULs) on carbon nanotubes for realizing highly active oxygen reduction reaction (ORR) catalytic electrodes
Hiroya Abe; Yutaro Hirai; Susumu Ikeda; Yasutaka Matsuo; Haruyuki Matsuyama; Jun Nakamura; Tomokazu Matsue; Hiroshi Yabu
NPG Asia Materials, Springer-Nature, 11, 1, 57 (1)-57 (12), 01 Dec. 2019, Peer-reviwed, © 2019, The Author(s). A new class of Pt-free catalysts was designed that included molecular iron phthalocyanine (FePc) derivatives, namely, iron azaphthalocyanine (FeAzPc) unimolecular layers (Fe AzULs) adsorbed on oxidized multiwall carbon nanotubes (oxMWCNTs). FeAzPcs were dissolved in organic solvents such as dimethyl sulfoxide (DMSO), and catalytic electrodes modified with molecularly adsorbed FeAzPcs were successfully prepared. The optimized composition of the catalytic electrodes was determined, and the electrodes exhibited superior activity for the oxygen reduction reaction (ORR) and better durability than conventional FePc catalytic electrodes and commercial Pt/C due to the electron-withdrawing properties of the pyridinic nitrogen in FeAzPcs. The catalytic electrodes that were molecularly modified with FeAzPcs have higher activities than those composed of FeAzPc crystals and oxMWCNTs. To the best of our knowledge, among all of the conventional catalysts based on modified MWCNTs and oxMWCNTs, this catalyst exhibits the highest activity. Unlike other Pt-free catalytic electrodes, the Fe AzUL catalytic electrodes can be prepared by low-cost processing without pyrolysis and are therefore promising catalytic electrode materials for applications, such as polymer electrolyte fuel cells and metal–air batteries.
Scientific journal, English

典型的な二元系化合物半導体の新しい超薄膜構造
中村淳
表面と真空, 日本表面真空学会, 62, 11, 686-686, 10 Nov. 2019, Peer-reviwed, Invited
Japanese

Oxygen reduction reaction mechanism of N-doped graphene nanoribbons
Haruyuki Matsuyamaa; Shun-ichi Gomi; Jun Nakamura
Journal of Vacuum Science and Technology B, American Institute of Physics, 37, 041803-1-041803-7, 17 Jul. 2019, Peer-reviwed
Scientific journal, English

Effect of Water on the Manifestation of the Reaction Selectivity of Nitrogen-Doped Graphene Nanoclusters toward Oxygen Reduction Reaction
Haruyuki Matsuyama; Akira Akaishi; Jun Nakamura
ACS Omega, ACS, 4, 3832-3838, 21 Feb. 2019, Peer-reviwed
Scientific journal, English

Atomic structure and passivated nature of the Se-treated GaAs(111)B surface
Akihiro Ohtake; Shunji Goto; Jun Nakamura
Scientific Reports, Nature Publishing Group, 8, 1, 1220-1-1220-8, 01 Dec. 2018, Peer-reviwed, We have systematically studied the atomic structure and electronic properties of the Se-treated GaAs(111)B surface using scanning tunneling microscopy, reflection high-energy electron diffraction, x-ray photoelectron spectroscopy, and first-principles calculations. We have found that Se atoms substitute \\frac{3},{4} 3 4 monolayer of As atoms at the outermost layer of the ideal (111)B surface. Charge transfer from Se to As eliminates all of unsaturated dangling bonds, so that the surface is electronically stabilized, leaving no surface states in the mid-gap region.
Scientific journal, English

Softly-confined water cluster between freestanding graphene sheets
Rifan Agustian; Akira Akaishi; Jun Nakamura
AIP Conference Proceedings, American Institute of Physics Inc., 1929, 020006-1-020006-5, 22 Jan. 2018, Peer-reviwed, Confined water could adopt new forms not seen in the open air, such as a two-dimensional (2D) square ice trapped between two graphene sheets [Algara-Siller et al., Nature 519, 443-445 (2015)]. In this study, in order to investigate how the flexibility of graphene affects the confined structure of water molecules, we employed classical molecular dynamics simulations with Adaptive Intermolecular Reactive Empirical Bond Order (AIREBO) potential to produce a soft-confining property of graphene. We discovered various solid-like structures of water molecules ranging from two-dimensional to three-dimensional structure encapsulated between two freestanding graphene sheets even at room temperature (300K). A small amount of water encapsulation leads to a layered two-dimensional form with triangular structure. On the other hand, large amounts of water molecules take a three-dimensional flying-saucer-like form with the square ice intra-layer structure. There is also a metastable state where both two-dimensional and three-dimensional structures coexist.
International conference proceedings, English

Plasma in Solution and Its Applications
Nagahiro Saito; Jun Nakamura; Tatsuru Shirafuji; Takahiro Ishizaki
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 57, 1, 010201-010201, 01 Jan. 2018, Peer-reviwed, Invited
Scientific journal, English

Structural stability and aromaticity of pristine and doped graphene nanoflakes
Akira Akaishi; Makoto Ushirozako; Haruyuki Matsuyama; Jun Nakamura
JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, 57, 1, 0102BA-1-0102BA-7, Jan. 2018, Peer-reviwed, We have quantitatively investigated the relationship between the aromaticity and structural stability of graphene nanoflakes (GNFs) using first-principles calculations. The aromaticity of each six-membered ring of GNFs is evaluated with the nucleus-independent chemical shifts (NICS). We have found that for armchair-edge GNFs, the degree of stability, that is, the edge formation energy, is proportional to the average NICS for all six-membered rings. Even for nitrogen-and boron-doped GNFs, the average NICS strongly correlates with the doping formation energy. Our results indicate that NICS is a good measure not only for the aromaticity but also for the structural stability of pristine/doped nanographene systems. (C) 2018 The Japan Society of Applied Physics
Scientific journal, English

二次元原子層シートの磁性
中村淳
表面科学, 日本表面科学会, 38, 10, 534-534, 10 Oct. 2017, Peer-reviwed, Invited
Japanese

Formation of Water Layers on Graphene Surfaces
Akira Akaishi; Tomohiro Yonemaru; Jun Nakamura
ACS Omega, American Chemical Society, 2, 5, 2184-2190, 31 May 2017, Peer-reviwed, Although graphitic materials were thought to be hydrophobic, recent experimental results based on contact angle measurements show that the hydrophobicity of graphitic surfaces stems from airborne contamination of hydrocarbons. This leads us to question whether a pristine graphitic surface is indeed hydrophobic. To investigate the water wettability of graphitic surfaces, we use molecular dynamics simulations of water molecules on the surface of a single graphene layer at room temperature. The results indicate that a water droplet spreads over the entire surface and that a double-layer structure of water molecules forms on the surface, which means that wetting of graphitic surfaces is possible, but only by two layers of water molecules. No further water layers can cohere to the double-layer structure, but the formation of three-dimensional clusters of liquid water is confirmed. The surface of the double-layer structure acts as a hydrophobic surface. Such peculiar behavior of water molecules can be reasonably explained by the formation of hydrogen bonds: The hydrogen bonds of the interfacial water molecules form between the first two layers and also within each layer. This hydrogen-bond network is confined within the double layer, which means that no "dangling hydrogen bonds" appear on the surface of the double-layer structure. This formation of hydrogen bonds stabilizes the double-layer structure and makes its surface hydrophobic. Thus, the numerical simulations indicate that a graphene surface is perfectly wettable on the atomic scale and becomes hydrophobic once it is covered by this double layer of water molecules.
Scientific journal, English

Reaction Selectivity for Oxygen Reduction of N-Doped Graphene Nanoclusters
H.Matsuyama; A.Akaishi; J.Nakamura
ECS Trans., ECS, 80, 8, 685-690, 2017, Peer-reviwed
International conference proceedings, English

Mechanism of stabilization and magnetization of impurity-doped zigzag graphene nanoribbons
Yuuki Uchida; Shun-ichi Gomi; Haruyuki Matsuyama; Akira Akaishi; Jun Nakamura
JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 120, 21, 214301-1-214301-7, Dec. 2016, Peer-reviwed, Doping is an efficient way to modify the electronic structure of graphene. Although there have been a considerable number of studies on the electronic structure of impurity-doped graphene, every study has suggested a different interpretation of the appearance of impurity levels of dopants located near the so-called zigzag edge of graphene nanoribbons (GNRs). Here, we propose a charge transfer model that satisfactorily explains the change in electronic structure upon N(B) doping of zigzag GNR (ZGNR). The structural stability and electronic structure of the doped ZGNR have been investigated using first-principles calculations based on the density functional theory. The formation energy of doping increases as a function of the distance between the N(B) atom and the zigzag edge, and two tendencies are observed depending on whether the dopant is an odd or even number of sites away from the zigzag edge. Such peculiar behavior of the formation energy can be successfully explained by charge transfer between the so-called edge state localized at the edge and the 2p-state of the dopant. Such an electron (hole) transfer leads to the compensation (disappearance) of the local spinmagnetic moment at one side of the ZGNR, manifesting in the ferromagnetic ground state of ZGNR. Published by AIP Publishing.
Scientific journal, English

Anomalous enhancement of Seebeck coefficients of the graphene/hexagonal boron nitride composites
Jun Nakamura; Akira Akaishi
JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, 55, 11, 1102A9 (1-9), Nov. 2016, Peer-reviwed, Invited, Thermoelectric devices convert heat energy to electric power. The dimensionless thermoelectric figure of merit, ZT, is used as a standard criterion for efficiency of thermoelectric conversion. This criterion requires a high Seebeck coefficient, a high electric conductivity, and a low thermal conductivity. In this regard, PbTe, BiTe, and their alloys consisting of relatively heavier elements have been found to show higher values of ZT. In this paper, we focus on the potential of graphene-based composites as thermoelectric materials. Graphene was considered to be a disadvantageous material because of its extremely high thermal conductance and relatively low Seebeck coefficient. However, it has been reported recently that a structural modulation is an effective way of raising the thermoelectric ability of graphene. We introduce the recent progress in the design of graphene-based materials for thermoelectric devices. In particular, we provide a focused investigation of our recent progress regarding the thermopower enhancement in nanoarchitectonics, superlattices, and composites consisting of graphene and hexagonal BN nanoribbons. It has been shown that low-dimensional modulations are effective ways of obtaining a high thermoelectric performance of graphene-based materials. (C) 2016 The Japan Society of Applied Physics
Scientific journal, English

First-principles study of locally disordered structures of Mn-induced GaAs(001)-(2 x 2) surface
Akira Akaishi; Kenta Funatsuki; Akihiro Ohtake; Jun Nakamura
JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, 55, 8, 08NB21-1-08NB21-4, Aug. 2016, Peer-reviwed, Various atomic arrangements of the Mn-induced GaAs(001) surface, consisting of one Ga-As dimer and one Mn atom in the (2 x 2) unit, have been investigated by first-principles calculations. The most stable arrangement is reasonable in view of the classical electrostatic theory. It has been revealed that the topmost Ga-As dimers tend to be aligned along the [110] direction, while they are less ordered along the [110] direction. These anisotropic orderings, that is, anisotropic interactions, imply that the Mn atom, which is located between the Ga-As dimers, enhances the local electrostatic interaction between the dimers along the [110] direction, as a result of the dielectric anisotropy at the surface. (C) 2016 The Japan Society of Applied Physics.
Scientific journal, English

グラファイト／グラフェン表面上の水の濡れ性
中村淳
表面科学, 日本表面科学会, 37, 4, 193-193, 10 Apr. 2016, Peer-reviwed, Invited
Scientific journal, Japanese

Mn-Induced Surface Reconstructions on GaAs(001)
Akihiro Ohtake; Atsushi Hagiwara; Kazuya Okukita; Kenta Funatsuki; Jun Nakamura
JOURNAL OF PHYSICAL CHEMISTRY C, AMER CHEMICAL SOC, 120, 11, 6050-6062, Mar. 2016, Peer-reviwed, We have systematically studied the surface reconstructions induced by the adsoprtion of Mn atoms on GaAs(001). Several types of adsorption structures were observed depending on the preparation conditions, and were identified using complementary experimental techniques of reflection high-energy electron diffraction, scanning tunneling microscopy, reflectance difference spectroscopy, and X-ray photoelectron spectroscopy. The sequence of surface structures as a function of As coverage was confirmed by the experiments and first-principles calculations. Under the most Ga-rich conditions, (2 x 2)alpha and (6 x 2) structures are formed, both having As atoms at faulted sites and Ga-Ga dimers at the third atomic layer. As the As coverage is increased, the structure with Ga-As dimer [ (2 x 2)beta] becomes more stable, and, finally, the c(4 x 4) structure consisting of three As As dimers is energetically favored at the As-rich limit. We found that the location of Mn atoms critically depends on the surface As coverage: As-deficient (2 x 2)alpha, (6 x 2), and (2 x 2)beta structures have the Mn atoms at 4-fold hollow sites, while the incorporation of Mn atoms into the substitutional Ga sites is enhanced in the most As-rich c(4 x 4) structure, in which the upper limit of substitutional Mn is 0.25 ML.
Scientific journal, English

Anomalous Stabilization in Nitrogen-Doped Graphene
Tsuguto Umeki; Akira Akaishi; Akihide Ichikawa; Jun Nakamura
JOURNAL OF PHYSICAL CHEMISTRY C, AMER CHEMICAL SOC, 119, 11, 6288-6292, Mar. 2015, Peer-reviwed, Structural stability and electronic structure of homogeneously arranged nitrogen-doped graphene have been investigated using first-principles calculations within the density functional theory. The structures of the homogeneously doped graphene are uniquely specified by the chiral index (n,m) inherent in each model and by the doping configurations. While the formation energy increases in proportional to the nitrogen density, there are specific arrangements for which the formation energies become lower compared to the proportional trend. Such an anomalous stabilization has been found in the honeycomb-type configuration with the chiral index (n,m) which satisfies the relation n m = 31 +2( = 0, 1, ...). This stabilization is originated from the lowering of the one-electron energy with the band gap formation, which is attributed to the decoupling of the degenerate states.
Scientific journal, English

Ballistic phonon thermal conductance of graphene and graphene nanoribbons
Nakamura Jun
Abstract of annual meeting of the Surface Science of Japan, The Surface Science Society of Japan, 35, 64-64, 2015, 本研究では、グラフェン、およびアームチェア型あるいはジグザグ型エッジを有するグラフェンナノリボンについて、フォノンの寄与によるバリスティック熱伝導特性を明らかにした。バリスティックフォノン熱コンダクタンスはランダウア熱流束から求める。グラフェンナノリボンの単位幅当たりの熱コンダクタンスは、グラフェンより大きく、かつリボン幅が小さくなるほど上昇することがわかった。

ソリューションプラズマによる新規物質合成
中村淳
表面科学, 日本表面科学会, 35, 8, 464-464, 10 Aug. 2014, Peer-reviwed, Invited
Japanese

Self-Assembled Growth of Ga Droplets on GaAs(001): Role of Surface Reconstructions
Akihiro Ohtake; Takaaki Mano; Atsushi Hagiwara; Jun Nakamura
CRYSTAL GROWTH & DESIGN, AMER CHEMICAL SOC, 14, 6, 3110-3115, Jun. 2014, Peer-reviwed, Formation processes of Ga droplets on GaAs(001) have been systematically studied. We present the evidence that the surface atomic structures of the GaAs substrate dominate the surface diffusion of Ga atoms, which plays a key role in determining the size and density of Ga droplets. The Ga droplets are formed on the As-rich (2 x 4) and c(4 x 4)beta surface after the modification of the initial surface reconstructions, while droplets are directly formed on the Ga-rich (4 x 6) surface. The density of Ga droplets on the (4 x 6) surface exceeds 10(12) cm(-2), which is significantly higher than that on the As-rich c(4 x 4)beta surfaces.
Scientific journal, English

Origin of symmetric STM images for the asymmetric atomic configuration on GaAs(001)-c(4 × 4)α surfaces
Shigeru Kaku; Jun Nakamura; Kazuma Yagyu; Junji Yoshino
Surface Science, Elsevier, 625, 84-89, 2014, Peer-reviwed, The empty-state scanning tunneling microscopy (STM) images of GaAs-c(4 × 4)α show symmetric features at positive biases, contrary to the naive prediction based on electron counting model. In this paper, we report that STM simulations based on first-principles electronic structure calculations successfully demonstrate symmetric images consistent with the STM observations. Furthermore, simple analysis has revealed that the origin of the symmetric images is the combined local electron density of multiple orbitals, and is essentially different from those on GaAs-c(4 × 4)β surfaces. © 2014 Elsevier B.V. All rights reserved.
Scientific journal, English

Giant Seebeck coefficient of the graphene/h-BN superlattices
Yushi Yokomizo; Jun Nakamura
APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 103, 11, 113901 (1-4), Sep. 2013, Peer-reviwed, The electronic structures and Seebeck coefficients of the graphene/h-BN superlattices which consist of zigzag graphene nanoribbons (ZGNRs) and zigzag BN nanoribbons (ZBNNRs) have been investigated using ab initio calculations based on the density functional theory. It has been shown that a ZGNR/ZBNNR marks up to 20 times larger in the Seebeck coefficient than graphene. The Seebeck coefficients of the superlattices increase with decreasing width of the constituent ZGNR. It has been revealed that the giant Seebeck coefficients of the superlattices stem from the so-called pudding mold band with a finite energy gap. (C) 2013 AIP Publishing LLC.
Scientific journal, English

Ballistic phonon thermal conductance in graphene nano-ribbons
Hiroki Tomita; Jun Nakamura
J.Vac.Sci.Technol. B, 31, 04D104 (1-7), May 2013, Peer-reviwed
Scientific journal, English

Erratum: Controlled incorporation of Mn in GaAs: Role of surface reconstructions
Ohtake Akihiro; Hagiwara Atsushi; Nakamura Jun
PHYSICAL REVIEW B, 87, 16, Apr. 2013, Peer-reviwed

Controlled incorporation of Mn in GaAs: Role of surface reconstructions (vol 87, 165301, 2013)
Akihiro Ohtake; Atsushi Hagiwara; Jun Nakamura
PHYSICAL REVIEW B, AMER PHYSICAL SOC, 87, 15, 165301 (1-5), Apr. 2013, Peer-reviwed
Scientific journal, English

Magnetic properties of a single molecular layer of MnAs on GaAs(110)
M. Hirayama; A. Natori; J. Nakamura
Physical Review B, 87, 075428 (1-6), Feb. 2013, Peer-reviwed
Scientific journal, English

教育の質保証評価ツールとしてのカリキュラムマップ
桑田正行; 安藤芳晃; 西一樹; 中村淳; 田中勝己
電気通信大学紀要, 電気通信大学, 25, 1, 41-50, Feb. 2013, The curriculum map (CM) provides a reasonable framework for quality assurance of education in certified evaluation and accreditation, accountability of university education, curriculum reform, and instructional improvement. Therefore, creation of CMs and its website have been made at many universities. However, there is nothing that described quantitatively how the CM is utilized for quality assurance of education. Then, in this paper, we describe the following things: (1) creation of the CM in the University of Electro-Communications, (2) in some viewpoints, scoring and visualization of the created CM, (3) the concrete guideline of the visualized CM's practical use as a tool to assess education achievement for quality assurance of education.
Research institution, Japanese

Ballistic phonon thermal conductance in Graphene Nano-Ribbon: First-principles calculations
Jun Nakamura; Hiroki Tomita
PHYSICS OF SEMICONDUCTORS, AMER INST PHYSICS, 1566, 139-140, 2013, Peer-reviwed, Ballistic phonon thermal conductances for graphene nanoribbons are investigated using first-principles calculations with the density functional perturbation theory and the Landauer theory. The phonon thermal conductance per unit width for GNR is larger than that for graphene and increases with decreasing ribbon width. The normalized thermal conductances with regard to a thermal quantum for GNRs are higher than those for the single-walled carbon nanotube that have circumferential lengths corresponding to the width of GNR.
International conference proceedings, English

カーボン系物質の熱伝導特性
中村淳
表面科学, The Surface Science Society of Japan, 33, 12, 702-702, Dec. 2012
Japanese

酸化グラフェンの応用
中村淳
表面科学, 32, 112, Feb. 2011
Japanese

応用物理学会人材育成・男女共同参画委員会における若手問題への取り組み
中村淳
放射線, 37, 22, Feb. 2011
Japanese

First-principles Calculations of the Dielectric Constant for the GeO2 Films
Masahiro Tamura; Jun Nakamura; Akiko Natori
TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS, TRANS TECH PUBLICATIONS LTD, 470, 60-65, 2011, Peer-reviwed, Dielectric properties of a-quartz and rutile-GeO2 thin-films are investigated using first-principles ground-state calculations in external electric fields. The optical and the static dielectric constants inside the films have nearly-constant values, corresponding to their bulk values, while only at the topmost surface layer the dielectric constants decrease distinctly. It has been found that the dielectric constant for the rutile-GeO2 is larger than that for the a-quartz one, which stems from the larger ionic character of the Ge-O bond for the rutile phase.
International conference proceedings, English

D- centers in uniaxially stressed Si and in Si/SiO2 quantum wells
T.Chiba; J.Nakamura; A.Natori
Physical Review B, 82, 195201 (1-9), Oct. 2010, Peer-reviwed
Scientific journal, English

応用物理分野のアカデミック・ロードマップ「人材育成」
山田明; 中村淳
応用物理, 応用物理学会, 79, 8, 744-746, Aug. 2010
Japanese

Conductivity and dielectric constant of nanotube/polymer composites
Yuichi Hazama; Naoki Ainoya; Jun Nakamura; Akiko Natori
PHYSICAL REVIEW B, AMER PHYSICAL SOC, 82, 4, 045204 (1-8), Jul. 2010, Peer-reviwed, The complex ac admittance of a thin film of carbon nanotube/polymer composites depending on both the concentration and the alignment of nanotubes has been studied. The complex ac admittance and the current intensity distribution is numerically calculated using a transfer matrix method, where the discretized mesh model for nanotube/polymer composites is transformed into the RC network. The percolation threshold increases with the degree of alignment of nanotubes. The vertical dc conductivity parallel to the alignment direction has the maximum at a specific alignment, which is caused by competition between the number of percolating paths and the degree of meandering of the current. Two extreme cases for the dc conductivity are studied; the nanotube-resistance (NT)-limited case and the contact-resistance (CR)-limited case. CR-limited conductivity has much stronger concentration dependence than NT-limited conductivity, since the number of parallel connections of contact-resistors increases more strongly with the nanotube concentration than that of nanotube resistors. The vertical static dielectric constant is enhanced near the percolation threshold and the enhancement is significantly enlarged with the alignment of nanotubes, due to both the decrease in the number of serial connections of minigap capacitors along the path of the imaginary current and the increase in the number of paths.
Scientific journal, English

Structural and electronic properties of carbon nanocylinder consisting of nanoribbon-walls with arrayed-oxygen hinges
Yuto Fujii; Akiko Natori; Jun Nakamura
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, A V S AMER INST PHYSICS, 28, 4, C5C8-C5C11, Jul. 2010, Peer-reviwed, The authors present the prediction of novel class of materials for carbon nanotube (CNT), carbon nanopolygonal-cylinder (CNPC), which consists of walls of graphene nanoribbon (GNR) with arrayed-oxygen hinges. The rolling-up energy for CNPC, that is, the energy required to roll up the two-dimensional sheet, is drastically reduced compared with that for CNT, e.g., the rolling-up energy of 5.62 eV per unit cell (12 C atoms) for (3,3) CNT, while negligibly small for CNPC with the corresponding chirality. Electronic dispersions for pi-bands near the Fermi edge along the cylinder axis of CNPC have shapes very similar to those of GNR rather than CNT, reflecting the fact that the atomic arrangement of the walls separated by oxygen-arrays holds that of GNR. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3463148]
Scientific journal, English

The anisotropy of ac conductivity and dielectric constant of anisotropic conductor–insulator composites
Yuichi Hazama; Jun Nakamura; Akiko Natori
J. Mater. Sci., 45, 2843-2851, Feb. 2010, Peer-reviwed
Scientific journal, English

ac conductivity and dielectric constant of nanotube polymer composites
Y.Hazama; N.Ainoya; J.Nakamura; A.Natori
37th Conference on the Physics and Chemistry of Surfaces and Interfaces, Mo1755, Jan. 2010, Peer-reviwed
International conference proceedings, English

Structural and electronic properties of carbon nanocylinder consisting of nanoribbon-walls with arrayed-oxygen hinges
Yuto Fujii; Akiko Natori; Jun Nakamura
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, AVS Science and Technology Society, 28, 4, C5-C11, 2010, Peer-reviwed, The authors present the prediction of novel class of materials for carbon nanotube (CNT), carbon nanopolygonal-cylinder (CNPC), which consists of walls of graphene nanoribbon (GNR) with arrayed-oxygen hinges. The rolling-up energy for CNPC, that is, the energy required to roll up the two-dimensional sheet, is drastically reduced compared with that for CNT, e.g., the rolling-up energy of 5.62 eV per unit cell (12 C atoms) for (3,3) CNT, while negligibly small for CNPC with the corresponding chirality. Electronic dispersions for π -bands near the Fermi edge along the cylinder axis of CNPC have shapes very similar to those of GNR rather than CNT, reflecting the fact that the atomic arrangement of the walls separated by oxygen-arrays holds that of GNR. © 2010 American Vacuum Society.
International conference proceedings, English

Dielectric properties of GeO2 ultrathin films
M.Tamura; S.Wakui; J.Nakamura; A.Natori
37th Conference on the Physics and Chemistry of Surfaces and Interfaces, We1740, Jan. 2010, Peer-reviwed
International conference proceedings, English

Variable stoichiometry in Sb-induced (2x4) reconstructions on GaAs(001)
Akihiro Ohtake; Motoi Hirayama; Jun Nakamura; Akiko Natori
PHYSICAL REVIEW B, AMER PHYSICAL SOC, 80, 23, 235329 (1-9), Dec. 2009, Peer-reviwed, The structure and composition of Sb-induced (2x4) reconstructions on the GaAs(001) surface have been systematically studied using scanning tunneling microscopy, reflectance-difference spectroscopy, x-ray photoelectron spectroscopy, reflection high-energy electron diffraction, and first-principles calculations. We show that several types of Sb-induced (2x4) reconstructions are formed, depending on the Sb coverage. The (2x4) surface with low Sb coverages has the structure with only one anion dimer at the outermost layer. For the Sb-rich (2x4) phase, on the other hand, we propose the structure model consisting of anion dimers at the first and third layers and three-coordinated As atoms at the second layer.
Scientific journal, English

Control mechanism of friction by dynamic actuation of nanometer-sized contacts
Hiroyuki Iizuka; Jun Nakamura; Akiko Natori
PHYSICAL REVIEW B, AMER PHYSICAL SOC, 80, 15, 155449 (1-8), Oct. 2009, Peer-reviwed, We studied both the mechanism and the condition of dynamic superlubricity actuated in a dynamic way for the atomic contact of a friction force microscope, using dynamical simulation of the Tomlinson model. The superlubricity was achieved by ac modulation of the normal force acting between two contacting bodies at well-defined frequencies corresponding to normal resonances of the combined system [A. Socoliuc et al., Science 313, 207 (2006)]. The time-averaged friction force depends crucially on the modulation amplitude and the superlubricity occurs above the critical amplitude. The effect on the superlubricity of the corrugation amplitude of surface potential, sliding velocity, a damping coefficient, and temperature are clarified. The superlubricity at zero temperature can be induced by transit of the tip via the "turning point," the top position of the surface potential without elastic deformation, and it is allowed at low-sliding velocities in the under-damped case. The superlubricity at a room temperature can be actuated efficiently with a much smaller critical amplitude than that at zero temperature and it can be achieved at sufficiently low-sliding velocities in both the underdamped and the overdamped cases, assisted by thermally activated hopping of the tip.
Scientific journal, English

GaAs(110)表面上のGa置換Mn原子鎖のスピン状態と電子状態
平山基; 中村淳; 名取晃子
表面科学, 30, 9, 532-537, Sep. 2009, Peer-reviwed
Japanese

Structural and electronic properties of carbon nanotubes consisting of nanoribbon-walls with arrayed-oxygen hinges
J.Nakamura; Yuto Fujii; Motoi Hirayama; Shusuke Eguchi; Yuta Ogoshi; Jun Ito; A.Natori
10th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-10), Thu-16:30-And3, Sep. 2009, Peer-reviwed
International conference proceedings, English

Ballistic thermal conductance of electrons in graphene ribbons
Eiji Watanabe; Sho Yamaguchi; Jun Nakamura; Akiko Natori
PHYSICAL REVIEW B, AMER PHYSICAL SOC, 80, 8, 085404 (1-6), Aug. 2009, Peer-reviwed, We investigate the ballistic thermal conductance of electrons in gated graphene ribbons with width above 20 nm and clarify both the temperature and the Fermi-level dependences. In the intrinsic graphene ribbons, the normalized thermal conductance by the quantum conductance, kappa(0), increases monotonically with temperature. In the gated graphene ribbons, the normalized thermal conductance increases steplikely as the Fermi level increases but it has nonmonotonic temperature dependence when the Fermi level is a little larger than the bottom of the subband. The value of the step height changes from 4 kappa(0) to 2 kappa(0) with increasing temperature. The ballistic electron thermal conductance per unit width of graphene ribbons is smaller than those of corresponding single-walled nanotubes and a graphene sheet and it approaches at 100 K that of a graphene sheet above the ribbon width of about 80 and 50 nm for zigzag ribbons and armchair ribbons, respectively.
Scientific journal, English

Dielectric constant profiles of the thin-films: alpha- and beta-quartz phases of (Si or Ge) dioxides
J.Nakamura; S.Wakui; M.Tamura; A.Natori
12th International Conference on the Formation of Semiconductor Interfaces (ICFSI-12), Tu.A.5, Jul. 2009, Peer-reviwed
International conference proceedings, English

In-plane strain effects on dielectric properties of the HfO2 thin film
Sadakazu Wakui; Jun Nakamura; Akiko Natori
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, A V S AMER INST PHYSICS, 27, 4, 2020-2023, Jul. 2009, Peer-reviwed, We have studied the dielectric properties of the cubic HfO2 thin film using first-principles ground-state calculations in external electric fields. We have evaluated the optical and the static dielectric constants for the cubic (c-) and the strained c-HfO2(001) films. The hydrogen termination of the surface suppresses the dielectric constant near the surface. The spatial variation of the local dielectric constant inside the film is very small. The static dielectric constant becomes larger with increasing lateral lattice constant and smaller if the constraint of the cubic symmetry is relaxed and two oxygen atoms in a unit cell becomes unequivalent. These results indicate that the change in dielectric constant can be attributed to the increase of the tetragonality in the film.
Scientific journal, English

Anisotropic half-metallic ground state of Mn atomic wire on GaAs(110)
Motoi Hirayama; Akiko Natori; Jun Nakamura
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, A V S AMER INST PHYSICS, 27, 4, 2062-2065, Jul. 2009, Peer-reviwed, The authors have investigated magnetic properties of Ga-substituted Mn atomic wires on the GaAs(110) surface, using first-principles calculations based on the spin-density functional theory. The Mn atomic wires are assumed to align in the << 110 >>- and << 001 >>-directions. The << 110 >>-oriented wire is more stable than the << 001 >>-oriented one and has the ferromagnetic ground state with the magnetic moment of 4.0 mu(B) per Mn atom. The band structure has a large dispersion along the wire and exhibits a half-metallic state. The ferromagnetic character of the Mn wire results from the double exchange interaction through the p-d hybridization between the Mn-3d and the GaAs surface states.
Scientific journal, English

酸化プロセスによるグラフェンナノリボンの作製
中村淳
表面科学, The Surface Science Society of Japan, 30, 6, 357-357, Jun. 2009, Peer-reviwed
Japanese

Structural and electronic properties of the planar C-skeleton polymers
Jun Nakamura; Nariaki Arimura; Motoi Hirayama; Akiko Natori
APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 94, 22, 223107 (1-3), Jun. 2009, Peer-reviwed, Atomic arrangements and electronic properties of two-dimensional C-based compounds having the diamondlike skeletons terminated with hydrogen atoms and/or hydroxyl groups, named graphane (poly-C2H2) and planar polymethanol (poly-C2OH2), have been investigated using first-principles calculations within the density functional theory. These planar polymers have direct gaps of 3.32 eV (only with hydrogen terminators) and 1.88 eV (with hydrogen and OH terminators), while crystalline diamond has an indirect band gap. The optical dipole transition between band edges, especially for the planar polymethanol, can be allowed.
Scientific journal, English

Band-bending effects on scanning tunneling microscope images of subsurface dopants: First-principles calculations
Motoi Hirayama; Jun Nakamura; Akiko Natori
JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 105, 8, 083720 (1-4), Apr. 2009, Peer-reviwed, Tip-induced band-bending (TIBB) effects on scanning tunneling microscope (STM) images have been investigated. The TIBB has an extremal value where the surface space charge layer turns from the inversion region to the depletion one with increasing dopant concentration at a fixed sample bias. Unignorable TIBB remains even for the usual degenerate semiconductor with a dopant concentration such as 10(18) cm(-3) for Si. The STM images for H-terminated Si(111) surfaces with dopants substituted at the subsurface have been simulated using first-principles calculations within the density functional theory. The subsurface dopants on the STM images become distinguishable more obviously in consideration of the TIBB effect, specifically for acceptors in the occupied state images and for donors in the empty state. As a result, the TIBB effect improves agreement between the experimental and the theoretical sample biases at which the dopant's feature can be observed clearly.
Scientific journal, English

Negative donors in bulk Si and Si/SiO2 quantum wells in a magnetic field
Jun-ichi Inoue; Tomo Chiba; Akiko Natori; Jun Nakamura
PHYSICAL REVIEW B, AMER PHYSICAL SOC, 79, 3, 035206 (1-8), Jan. 2009, Peer-reviwed, The spin-singlet ground states of a D- ion in bulk Si and Si/SiO2 quantum wells have been investigated in the presence of a magnetic field, using a diffusion quantum Monte Carlo method. By neglecting the central-cell correction, the negative donor state can be assigned by the valley indexes of two trapped electrons. In the bulk Si, the ground-state energies of negative donors of both the intervalley and intravalley configurations split into two levels in a magnetic field along the z axis and the lowest-energy state becomes the intervalley configuration of the two electrons in the valleys with their longitudinal axes perpendicular to the magnetic field. The magnetic field increases the binding energy of a negative donor and the strongest enhancement is attained for the intravalley configuration of the two electrons in the valley with the longitudinal axis parallel to the magnetic field. In the quantum well with the interface within the x-y plane, the quantum confinement effect changes the lowest-energy state of a negative donor from the intervalley configuration in the bulk to the intravalley configuration for which the binding energy is increased most strongly by the magnetic field perpendicular to the well interface. The central-cell correction on the binding energy of a D- ion in a quantum well is also discussed.
Scientific journal, English

Structural stability and cohesive properties of the oxygen-adsorbed graphene
S.Eguchi; J.Nakamura; A.Natori
5th International Symposium on Surface Science and Nanotechnology(ISSS-5), 10p-p-116, Nov. 2008, Peer-reviwed
International conference proceedings, English

Dielectric properties of the ultra-thin La2O3(0001) film
R.Yanai; J.Nakamura; A.Natori
5th International Symposium on Surface Science and Nanotechnology(ISSS-5), 11p-p-5, Nov. 2008, Peer-reviwed
International conference proceedings, English

Conductivity and dielectric constant of anisotropic CNT/polymer composites
Y.Hazama; J.Nakamura; A.Natori
5th International Symposium on Surface Science and Nanotechnology(ISSS-5), 11p-p-71, Nov. 2008, Peer-reviwed
International conference proceedings, English

Half-metallic ground states of Mn atomic wires on GaAs(110)
M.Hirayama; J.Nakamura; A.Natori
5th International Symposium on Surface Science and Nanotechnology(ISSS-5), 12a-h-7, Nov. 2008, Peer-reviwed
International conference proceedings, English

First-principles evaluation of the polytype-dependence of the local dielectric constant for SiC
K.Sato; Y.Iwasaki; S.Wakui; J.Nakamura; A.Natori
5th International Symposium on Surface Science and Nanotechnology(ISSS-5), 12p-1-13, Nov. 2008, Peer-reviwed
International conference proceedings, English

Size effects in friction of multiatomic sliding contacts
Masanori Igarashi; Akiko Natori; Jun Nakamura
PHYSICAL REVIEW B, AMER PHYSICAL SOC, 78, 16, 165427 (1-10), Oct. 2008, Peer-reviwed, We studied the multiatomic contact effect of a friction force microscope at a finite temperature using the dynamical simulation of the Frenkel-Kontrova-Tomlinson model with a finite contact size. The friction force depends crucially on both the lattice mismatch between the tip of a friction force microscope and the sample surface and the strength of the lateral coupling between atoms in the tips. In the case of strong coupling, the friction force depends strongly on both the lattice mismatch and the tip size: there exists a magic size at which the friction force is reduced dramatically due to suppression of the effective corrugation of the surface potential to drag the tip. In the case of weak coupling, a decrease of the friction force with increasing temperature is enhanced as the tip size increases, irrespective of the lattice mismatch. This is caused by the enhanced thermal fluctuation for the multiatomic contact. The correlation among atoms in the multiatomic contact is also discussed.
Scientific journal, English

Dielectric discontinuity at surfaces and interfaces: a first-principles approach
J.Nakamura; K-H.Sato; Y.Iwasaki; S.Wakui; A.Natori
International Conference on Nanoscience + Technology (ICN+T2008), NM2-TuM13, Jul. 2008, Peer-reviwed
International conference proceedings, English

Semiconducting nature of the oxygen-adsorbed graphene sheet
Jun Ito; Jun Nakamura; Akiko Natori
JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 103, 11, 113712 (1-5), Jun. 2008, Peer-reviwed, Structural and electronic properties for oxygen-adsorbed graphene sheets have been explored using first-principles total-energy calculations within the local density functional theory. A finite energy gap emerges for the oxygen-adsorbed graphene and its value increases with the ratio of O/C, as manifested by experiments. Further, adsorption energy and migration barrier for oxygen atoms on the graphene sheet have been investigated. The results show that isolated oxygen atoms are highly mobile and incline to condense on the graphene sheet. (C) 2008 American Institute of Physics.
Scientific journal, English

Negative donors in multivalley semiconductors: Diffusion quantum Monte Carlo simulations
Jun-ichi Inoue; Jun Nakamura; Akiko Natori
PHYSICAL REVIEW B, AMER PHYSICAL SOC, 77, 12, 125213 (1-5), Mar. 2008, Peer-reviwed, Ground states of the D- ion in multivalley semiconductors have been investigated using a diffusion quantum Monte Carlo method, under the condition that the central- cell correction for a donor ion can be neglected. The D- binding energy E-B(D-) can be simply approximated for the intravalley configuration with the use of a donor binding energy E-B(D0), as E-B(D-) similar or equal to 0.055E(B)(D0), if the anisotropy of the effective mass is not so large. The anisotropy of the effective mass being large, the D- binding energy increases greater than 0.055E(B)(D0). This is due to the enhancement of the correlation effect between two electrons in a D- ion with lowering dimension. For the intervalley configuration, the D- binding energy is further increased because the repulsive Coulomb energy between trapped electrons can be effectively suppressed. Our calculated results reproduce well the experimental ones for Si and Ge, in which the intravalley or the intervalley configuration is well controlled.
Scientific journal, English

Structural bistability of the oxygen-adsorbed graphene sheet
J. Nakamura; J. Ito; A. Natori
PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, IOP PUBLISHING LTD, 100, 052019 (1-4), 2008, Peer-reviwed, Structural and electronic properties for oxygen-adsorbed graphene sheets have been explored using first-principles total-energy calculations within the local spin density functional theory. It has been found that the structural bistability appears with regard to the oxygen adsorption. This bistability corresponds to the formation of epoxy group or ether group, where the ether group phase is more stable than the epoxy group one. Further, the relative stability for the one-side adsorption model to the both-sides one is explored; oxygen atoms prefer to adsorb on both sides of the graphene sheet, while the one-side adsorption structure becomes metastable.
International conference proceedings, English

Atomic scale dielectric constant near the SiO2 /Si (001) interface
Sadakazu Wakui; Jun Nakamura; Akiko Natori
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26, 4, 1579-1584, 2008, Peer-reviwed, The authors evaluated the local dielectric constant for the ultrathin Β -quartz (0001) films and the ideal quartz/Si(001) interface and studied the effect of oxygen vacancy on the local dielectric constant, using first-principles calculations in external electric fields. The optical dielectric constant in the SiO2 film is increased slightly around the oxygen vacancy, while the static dielectric constant is increased remarkably. These enhancements are caused by introduction of Si+3 state by the oxygen vacancy. For the ideal quartz/Si(001) interface, both the optical and the static dielectric constants change abruptly from each bulk value to another one. The oxygen vacancy located just at the interface layer changes the interface Si+2 state into Si+1 state and increases both the optical and the static dielectric constant in the adjacent Si region. © 2008 American Vacuum Society.
Scientific journal, English

Ballistic thermal conductance of a graphene sheet
Koichi Saito; Jun Nakamura; Akiko Natori
PHYSICAL REVIEW B, AMER PHYSICAL SOC, 76, 11, 115409-1 - 115409-4, Sep. 2007, Peer-reviwed, We derive a formula to calculate the ballistic thermal conductance of a two-dimensional system directly from the dispersion relations of phonons and electrons. We apply the method to a graphene and investigate both the temperature and the Fermi energy dependences of the ballistic thermal conductance. The ballistic thermal conductance per unit length of a graphene becomes isotropic from the threefold rotational symmetry. In the intrinsic graphene where the Fermi energy crosses the Dirac point, the thermal conductance of electrons increases in proportion to T-2 with temperature, while the phonon conductance increases in proportion to T-1.5 due to the quadratic dispersion relation of the out-of-plane acoustic mode and prevails over the electron-derived conductance irrespective of temperature. As the Fermi energy is moved from the Dirac point for the gated graphenes, the thermal conductance of electrons increases monotonically and the temperature dependence changes from a T-2 dependence in the intrinsic graphene to a T-linear one at low temperatures. The electron thermal conductance of the gated graphenes dominates over the phonon contribution at low temperatures.
Scientific journal, English

Mechanism of velocity saturation of atomic friction force and dynamic superlubricity at torsional resonance
Masanori Igarashi; Jun Nakamura; Akiko Natori
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, INST PURE APPLIED PHYSICS, 46, 8B, 5591-5594, Aug. 2007, Peer-reviwed, We studied both mechanisms of the scan velocity saturation of the average friction force of friction force microscopy and the resonant reduction in the average friction force by superimposing torsional oscillation on a cantilever on the basis of the one-dimensional Tomlinson model at a finite temperature. The velocity saturation is caused by the appearance of a high degree of slip motion for a tip, which is induced by increasing the scan velocity. We proposed two possible mechanisms for the resonant reduction in the average friction force, namely, the enhanced synchronous slip motion of a tip atom with a support point and the activated slip motion of a tip atom caused by oscillation excitation at a stick point. The. calculated results reproduce the experimental results well.
Scientific journal, English

Simulations of scanning Tunneling Microscopy for B-/P-doped Si(111) surfaces
Motoi Hirayama; Jun Nakamura; Akiko Natori
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, INST PURE APPLIED PHYSICS, 46, 8B, 5643-5646, Aug. 2007, Peer-reviwed, We have investigated scanning tunneling microscopy (STM) for hydrogen-terminated Si(I 11) surfaces that have substitutional dopants in the subsurface region, using first-principles calculations within the density functional theory. The STM image for the occupied state indicates protrusion around a subsurface B atom and depression around a subsurface P atom. For the STM image of the unoccupied state, protrusions and depressions are interchanged. These dopant features on the STM image can be explained by the change in electrostatic potential around a dopant ion. The most stable depth of the substitutional B or P atom in H-terminated Si(I 11) surfaces is determined to be the second atomic layer from the topmost Si layer. The effect of a dangling bond created by the desorption of H atoms on the STM image of the subsurface dopant has also been studied.
Scientific journal, English

Dielectric properties of the interface between Si and SiO2
Sadakazu Wakui; Jun Nakamura; Akiko Natori
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, 46, 5B, 3261-3264, May 2007, Peer-reviwed, We studied the electronic structure and dielectric properties of a SiO(2()quartz)-(1100)/Si(001) interface, using first-principles ground-state calculations in a finite electric field. We evaluated the optical and the static dielectric constants for the stable SiO2/Si(001) interface model. Both the optical and the static dielectric constants change abruptly in the vicinity of the SiO2/ Si interface, while the energy gap changes gradually on the SiO2 side. These results indicate that the profile of the dielectric constant is determined by the local polarization which directly reflects the local atomic arrangement.
Scientific journal, English

First-principles evaluations of dielectric properties from nano-scale points of view
Jun Nakamura; Sadakazu Wakui; Akiko Natori
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 1407-1410, 2007, Peer-reviwed, Dielectric properties of ultra-thin Si(111), SiO2, and La 2O3(0001) films have been investigated using two methods, Internal Field method and Dipole Moment method, on the basis of the first-principles ground-states calculations in external electrostatic fields. With increasing thickness of the Si(111) film, the optical dielectric constant evaluated at the center of the slab converges to the experimental bulk dielectric constant, while the energy gap of the slabs is still larger than that of corresponding bulk. On the other hand, both the optical and the static dielectric constants of β-SiO2(0001) films hardly depend on the film thickness and the spatial variation of the local dielectric constant is also very small. It has been found that both the surface effect and the quantum confinement effect are small on ultra-thin β-SiO2(0001) films. Further, it has been revealed that ultra-thin La2O3(0001) film having a thickness of 1.1 nm possesses a large value of the static dielectric constant (29.2) equivalent to that of bulk. © 2006 IEEE.
International conference proceedings, English

Dielectric discontinuity at a twin boundary in Si(111)
Jun Nakamura; Akiko Natori
PHYSICS OF SEMICONDUCTORS, PTS A AND B, AMER INST PHYSICS, 893, 5-+, 2007, Peer-reviwed, Spatial variations in dielectric constant for the Si films having various stackings have been illustrated using the first-principles calculations based on the density functional theory in external electric fields. The theoretical value of the optical dielectric constant, epsilon(infinity), at the innermost region of the 3C-Si(111) film agrees well with the experimental one above 8 bi-layers. Furthermore, the local variation of epsilon(infinity) at the twin boundary has been demonstrated. epsilon(infinity) changes abruptly at the twin boundary. Such a locality in the variation of epsilon(infinity) originates from the local atomic arrangement at the boundary.
International conference proceedings, English

Charge correlation and spin coupling in double quantum dots
Hyuga Masu; Jun Nakamura; Akiko Natori
PHYSICS OF SEMICONDUCTORS, PTS A AND B, AMER INST PHYSICS, 893, 775-+, 2007, Peer-reviwed, We study both the spin and the charge correlations between two electrons in vertically coupled quantum dots with a finite well width, using a diffusion quantum Monte Carlo method. We clarify the mechanism of their dependence on both a barrier thickness and a magnetic field. When the barrier thickness increases, two-electron occupation probability in the same dot is suppressed drastically by enhanced charge correlation relative to the electron transfer effect and a magnitude of the antiferromagnetic spin coupling decreases in two stages, from a strong coupling to a weak coupling, As the magnetic field increases, both the antiferromagnetic spin coupling constant and the two-electron occupation probability in the same dot are suppressed. In the case of weak lateral confinement, transitions of the ground state can be also induced by a magnetic field and they accompany changes of the spin coupling between antiferromagnetic and ferromagnetic couplings.
International conference proceedings, English

Nano-scale profile of the dielectric constant near the Si/oxide interface: A first-principles approach
J. Nakamura; S. Wakui; S. Eguchi; R. Yanai; A. Natori
ECS Transactions, 11, 6, 173-182, 2007, Peer-reviwed, Spatial variation in dielectric constants near the Si/SiO2 interfaces has been revealed using the first-principles ground-states calculations in external electrostatic fields. It has been shown that both the optical and the static
dielectric constants change abruptly in the vicinity of the SiO2/Si interfaces, while the energy gap changes gradually on SiO2 side. These results indicate that the profile of dielectric constant is determined by the local polarization which directly reflects the local atomic arrangement. Dielectric properties of isolated ultra-thin Si(111), SiO2, and La2O3(0001) films have also been investigated. Both the optical and the static dielectric constants of oxide films hardly depend on the film thickness and the spatial variation of the local dielectric constant is also very small as contrasted to the semiconducting Si film. ©The Electrochemical Society.
International conference proceedings, English

First-principles evaluations of dielectric constants for ultra-thin semiconducting films
J.Nakamura; A.Natori
Surface Science, 600, 4332-4336, Oct. 2006, Peer-reviwed
Scientific journal, English

ac conductivity and dielectric constant of conductor-insulator composites
Tan Benny Murtanto; Satoshi Natori; Jun Nakamura; Akiko Natori
PHYSICAL REVIEW B, AMERICAN PHYSICAL SOC, 74, 11, 115206-1 - 115206-7, Sep. 2006, Peer-reviwed, We study the complex admittance (ac conductivity and dielectric constant) of conductor-insulator composite material, based on a two-dimensional square network consisting of randomly placed conductors and capacitors. We derived some exact analytical relations between the complex admittances of high and low frequencies and of complementary conductor concentrations. We calculate the complex admittance by applying a transfer-matrix method to a square network and study the dependence on both the frequency and the conductor concentration. The numerical results are compared with an effective-medium theory, and the range of applicability and limitation of the effective-medium theory are clarified.
Scientific journal, English

Charge correlation and spin coupling in double quantum dots: A quantum diffusion Monte Carlo study
Hyuga Masu; Taichi Yamada; Jun Nakamura; Akiko Natori
PHYSICAL REVIEW B, AMERICAN PHYSICAL SOC, 74, 7, 075312-1 - 075312-8, Aug. 2006, Peer-reviwed, We study both the spin and the charge correlations between two electrons in vertically coupled quantum dots with a finite well width, using a diffusion quantum Monte Carlo method. We clarify the mechanism of their dependence on both a barrier thickness and a magnetic field, on the basis of the Hubbard model analysis. When the barrier thickness increases, two-electron occupation probability in the same dot is suppressed drastically by enhanced charge correlation relative to the electron transfer effect, and the magnitude of the antiferromagnetic spin coupling decreases in two stages from a strong coupling region to a weak coupling region. Both the antiferromagnetic spin coupling constant and the two-electron occupation probability in the same dot are suppressed by magnetic field, being caused by enhanced intradot Coulomb interaction. In the case of weak lateral confinement, transition of the ground state can also be induced by a magnetic field and it accompanies changes of the spin coupling between antiferromagnetic and ferromagnetic couplings.
Scientific journal, English

First-principles calculations of dielectric constants for ultrathin Sio(2) films
Sadakazu Wakui; Jun Nakamura; Akiko Natori
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, A V S AMER INST PHYSICS, 24, 4, 1992-1996, Jul. 2006, Peer-reviwed, We studied the dielectric properties of ultrathin SiO2 films using two methods, internal field method and dipole moment method, based on first-principles calculations of the ground state in a finite electric field. We evaluated the optical and static dielectric constants, epsilon(infinity) and epsilon(0), of H-terminated beta-quartz (0001) films through calculations without and with the lattice relaxation in the electric field applied, respectively. The calculated values of E. and so with these two methods are in good agreement with each other, and they reproduce well the experimental values. Both the optical and static dielectric constants hardly depend on the film thickness, and the spatial variation of the local dielectric constant is also very small. These results indicate that both the surface effect and the quantum confinement effect are small for the ultrathin H-terminated beta-quartz (0001) films. (c) 2006 American Vacuum Society.
Scientific journal, English

Structural stabilities and electronic properties for planar Si compounds
Motoi Hirayama; Jun Nakamura; Akiko Natori
e-Journal of Surface Science and Nanotechnology, 4, 528-533, 09 Jun. 2006, Peer-reviwed, We have investigated atomic arrangements and electronic properties of two-dimensional Si compounds having the Si(111) skeletons with H and/or OH-radicals terminators, using first-principles calculations within the density functional theory. A mechanism of the onset of a direct gap for the planar siloxene has been clarified from the chemical bonding points of view. The direct energy gap does not change with increasing thickness of the Si-skeleton of the planar siloxene, but the indirect one decreases: the direct and indirect gaps of the planar siloxene are associated with the surface state and the Si-skeleton states, respectively. If both surfaces of the planar siloxene are terminated with the OH-radicals, the stacking of the Si-skeleton changes from the diamond structure to the Wurtzite one as the Si-skeleton thickness increases. In such artificial compounds, a direct gap appears only at the thinnest Si thickness as well as the case of the planar siloxene. © 2006 The Surface Science Society of Japan.
Scientific journal, English

Double-slip mechanism in atomic-scale friction: Tomlinson model at finite temperatures (vol 72, art no 235415, 2005)
J Nakamura; S Wakunami; A Natori
PHYSICAL REVIEW B, AMERICAN PHYSICAL SOC, 73, 16, 169901-1, Apr. 2006, Peer-reviwed
Scientific journal, English

Dielectric properties of hydrogen-terminated Si(111) ultrathin films
J Nakamura; S Ishihara; A Natori; T Shimizu; K Natori
JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 99, 5, 054309-1 - 054309-5, Mar. 2006, Peer-reviwed, Dielectric properties of Si(111) ultrathin films have been investigated using first-principles ground-states calculations in external electrostatic fields. With increasing thickness of Si(111) ultrathin films, the optical dielectric constant evaluated at the center of the slab converges to the experimental bulk dielectric constant at a thickness of only eight bilayers, while the energy gap of the slab is still larger than that of bulk Si. The converged theoretical dielectric constant for bulk Si is only 6.2% higher than the experimental one. Furthermore, spatial variations of the dielectric constant have also been evaluated using the position-dependent macroscopic field given by a clear-cut definition. The results show that the dielectric constant is reduced distinctly at the first few bilayers from the surface, which stems from the penetration of depolarized charges induced at the surface. Such an effective reduction of the depolarization field near the surface is one of the reasons for the decrease in optical dielectric constant for the ultrathin films.
Scientific journal, English

First-principles evaluations of dielectric constants
Jun Nakamura; Sadakazu Wakui; Akiko Natori
2006 INTERNATIONAL WORKSHOP ON NANO CMOS, PROCEEDINGS, IEEE, 236-249, 2006, Peer-reviwed, Dielectric properties of ultra-thin Si(111), SiO2, and La2O3(0001) films have been investigated using two methods, Internal Field method and Dipole Moment method, based on first-principles ground-states calculations in external electrostatic fields. With increasing the thickness of the Si(111) film, the optical dielectric constant evaluated at the center of the slab converges to the experimental bulk dielectric constant, while the energy gaps of the slabs are still larger than those of corresponding bulks. On the other hand, both the optical and the static dielectric constants of beta-SiO2(0001) films hardly depend on the film thickness and the spatial variation of the local dielectric constant is also very small. It has been found that both the surface effect and the quantum confinement effect are small on ultra-thin beta-SiO2(0001) films. Further it has been revealed that ultra-thin La2O3(0001) film having a thickness of 1.1 nm possesses a large value of the static dielectric constant (29.2) equivalent to that of bulk.
International conference proceedings, English

Dielectric discontinuity at structural boundaries in Si
Jun Nakamura; Akiko Natori
Applied Physics Letters, 89, 5, 053118-1 - 053118-3, 2006, Peer-reviwed, The authors have explored optical dielectric constants, ε∞, of ultrathin 3C(diamond)-Si(111) and 2H(wurtzite)-Si(0001) films using first-principles calculations in finite external electric fields. ε∞ evaluated at the innermost region of the films approach values near their bulk dielectric constants at a thickness of only eight bilayers: 12.8 (3C) and 13.4 (2H). Furthermore, the authors have revealed that the spatial variation of ε∞ near the stacking fault corresponding to the twin boundary for 3C-Si and that at the heteroboundary between 3C- and 2H-Si changes abruptly at the boundary for both cases. Such a locality in the variation of ε∞ originates from the local atomic arrangement at the boundary. © 2006 American Institute of Physics.
Scientific journal, English

Double-slip mechanism in atomic-scale friction: Tomlinson model at finite temperatures
J Nakamura; S Wakunami; A Natori
PHYSICAL REVIEW B, AMER PHYSICAL SOC, 72, 23, 235415-1 - 235415-6, Dec. 2005, Peer-reviwed, We studied the atomic scale friction mechanism of a friction force microscope (FFM) by means of the dynamical simulation in the Tomlinson model at a finite temperature. Stick-slip motion of a tip atom is the intrinsic energy dissipation mechanism at low scanning velocities of a support point of FFM and the frictional behavior is classified into three modes. The single slips occur in a high friction mode but double slips occur in a low friction mode, while mixed slips of single and double occur in an intermediate friction mode. In the intermediate friction mode, the friction force shows irregular sawtooth behavior as the support point is moved. We clarify the appearance condition of these three friction modes and each dependence of the average friction force on both temperatures and the sliding velocities.
Scientific journal, English

Electronic and magnetic properties of BNC ribbons
J Nakamura; T Nitta; A Natori
PHYSICAL REVIEW B, AMERICAN PHYSICAL SOC, 72, 20, 205429-1 - 205429-5, Nov. 2005, Peer-reviwed, Both electronic and magnetic properties have been studied for hexagonally bonded honeycomb ribbons consisting of B, N, and C atoms, with zigzag edges terminated by H atoms. We have used first-principles total-energy electronic-structure calculations within the local spin-density functional theory. The energy gap of BN ribbons is dominated by the edge states and it decreases monotonically with increasing ribbon width. For metallic BNC ribbons with different zigzag edges, C and BN or NB, the ground state becomes ferrimagnetic; this originates from the coexistence of the border state and the edge state.
Scientific journal, English

Friction in atomic scale
S.Wakunami; J.Nakamura; A.Natori
13th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM05), Jul. 2005, Peer-reviwed
International conference proceedings, English

半導体超薄膜の誘電特性
中村淳; 名取晃子
表面科学, 26, 7, 392-397, Jul. 2005, Peer-reviwed
Scientific journal, Japanese

Two types of surface atomic structures for As-rich GaAs(001)-c(4x4)
A.Ohtake; P.Kocan; J.Nakamura; A.Natori; N.Koguchi
The 8th International Conference on the Structure of Surfaces (ICSOS-8), Mo.P49, Jul. 2005, Peer-reviwed
International conference proceedings, English

Electronic and magnetic properties of BNC ribbons
T.Nitta; J.Nakamura; A.Natori
The 8th International Conference on the Structure of Surfaces (ICSOS-8), Th.P36, Jul. 2005
International conference proceedings, English

Spatial variation in dielectric constant at surfaces of hydrogen-terminated ultra-thin Si(111) films
J.Nakamura; A.Natori
The 8th International Conference on the Structure of Surfaces (ICSOS-8), Th.P35, Jul. 2005, Peer-reviwed
International conference proceedings, English

Structural stability of Si(001) and Ge(001) in external electric fields
J Nakamura; A Natori
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, 44, 7B, 5413-5416, Jul. 2005, Peer-reviwed, The effects of external electrostatic fields normal to surfaces, Ex,, on the structural stability of Si(001) and Ge(001) have been investigated using first-principles total energy calculations. It has been shown that the c(4 x 2) surface is more stable than the p(2 x 2) surface for both Si(001) and Ge(001) even with a finite electric field whose strength is typical of STM, experiments. On the other hand, it has been revealed that the energy barrier for dimer flipping, E-B, shows different dependences between the Si(001)- and Ge(001)-(2 x 1) surfaces: EB at Si(001) changes in proportion to E-ext, but hardly does at Ge(001). Such a difference is explained by the difference in the rehybridization of buckled dimers between the reconstructed surfaces of Si(001) and Ge(001), which originates from the difference in the s-p separation of valence orbitals between Si and Ge.
Scientific journal, English

若手・女性研究者の研究環境
中村淳; 伊賀健一
学術の動向, Japan Science Support Foundation, 10, 4, 33-36, Apr. 2005
Scientific journal, Japanese

Energy barrier for dimer flipping at the Si(001)-(2x1) surface in external electric fields
J Nakamura; A Natori
PHYSICAL REVIEW B, AMER PHYSICAL SOC, 71, 11, 113303-1 - 113303-4, Mar. 2005, Peer-reviwed, Effects of external electrostatic fields, E-ext, on a barrier in energy for dimer flipping, E-B, at the Si(001)-(2x1) surface have been investigated using first-principle total energy calculations. It has been revealed that E-B changes in proportion to E-ext. This finding suggests that we can turn on and off the flip-flop motions by alternating the polarity of the field with a scanning tunneling microscope (STM) at low temperatures, which is consistent with the recent experimental results. It has also been shown that the c(4x2) surface is more stable than the p(2x2) even in electric fields typical of STM experiments.
Scientific journal, English

Energy barrier for dimer flipping at the Si(001)-2 x 1 surface in external electrostatic fields
J Nakamura; A Natori
PHYSICS OF SEMICONDUCTORS, PTS A AND B, AMER INST PHYSICS, 772, 371-372, 2005, Peer-reviwed, We have investigated effects of external electrostatic fields on a barrier in energy for dimer flipping, EB, at the Si(001)-(2 x 1) surface by using first-principles total energy calculations. The results show that EB changes in proportion to E-ext. This finding suggests that we can turn on and off the flip-flop motions by alternating the polarity of the field with a scanning tunneling microscope at low temperatures.
International conference proceedings, English

Dielectric properties of ultra-thin films
J Nakamura; S Ishihara; H Ozawa; A Natori
PHYSICS OF SEMICONDUCTORS, PTS A AND B, AMER INST PHYSICS, 772, 951-952, 2005, Peer-reviwed, A novel evaluation method of a dielectric constant is proposed with the use of first-principles calculations for the ground states in external eletrostatic fields, which is applicable to ultrathin films. The optical dielectric constant evaluated at the innermost region of the film approaches a constant value near to the experimental bulk dielectric constant with increasing the thickness of Si(111) ultra-thin films up to only 8 bi-layers, while the energy gap of the film is much larger than that of bulk Si. The theoretical value of the optical dielectric constant for the Si (111) film, which is converged at a large thickness, well reproduces the experimental one for bulk Si.
International conference proceedings, English

Ge/Si(113)-(2x2) surfaces: structural features induced by self-interstitial atoms
Z.H.Zhang; K.Sumitomo; J.Nakamura
Wuli, 33, 708-712, Oct. 2004, Peer-reviwed
Scientific journal, English

Ga-As dimer structure for the GaAs(001)-c(4x4) surface
A Ohtake; J Nakamura; N Koguchi; A Natori
SURFACE SCIENCE, ELSEVIER SCIENCE BV, 566, 58-62, Sep. 2004, Peer-reviwed, We studied the atomic structure of the As-stabilized GaAs(001)-c(4 x 4) surface using scanning tunneling microscopy, reflection high-energy electron diffraction, reflectance difference spectroscopy, and first-principles calculations. The structure model consisting of three Ga-As dimers per c(4 x 4) unit cell explains well the experimental data. The three Ga-As dimers in the c(4 x 4) unit cells are usually aligned in the same orientation, which was found to be energetically stable. We also discuss the possible change to the symmetric As-As dimer structure under more As-rich condition. (C) 2004 Elsevier B.V. All rights reserved.
Scientific journal, English

Atomic scale friction of nanoscale clusters
K.Ohno; T.Nitta; J.Nakamura; A.Natori
Journal of Vacuum Science and Technology B, 22, 2026-2029, Aug. 2004, Peer-reviwed
Scientific journal, English

Kinetics in surface reconstructions on GaAs(001)
A Ohtake; P Kocan; J Nakamura; A Natori; N Koguchi
PHYSICAL REVIEW LETTERS, AMERICAN PHYSICAL SOC, 92, 23, 236105-1 - 236105-4, Jun. 2004, Peer-reviwed, We have successfully controlled the surface structures of GaAs(001) by changing incident As-molecular species. Under As-4 fluxes, the c(4x4) reconstruction with Ga-As dimers [c(4x4)alpha structure] is obtained, but the formation of three As-As dimer structures [c(4x4)beta structure] is kinetically limited. On the other hand, the structure change from the (2x4), through c(4x4)alpha, to c(4x4)beta phases is observed under As-2 fluxes. We found that the c(4x4)alpha structure is energetically metastable and provides a kinetic pathway for the structure change between the (2x4) and c(4x4)beta phases under As-2 fluxes.
Scientific journal, English

First-principles study on the atomic and electronic structures of the Au/Si(111)-alpha(Sqrt3xSqrt3)R30 surface
T.Kadohira; J.Nakamura; S.Watanabe
e-Journal of Surface Science and Nanotechnology, 2, 146-150, Apr. 2004, Peer-reviwed
Scientific journal, English

Direct observation of Au deposition processes on the InSb{111}A,B-(2x2) surfaces
S.P.Cho; J.Nakamura; N.Tanaka; T.Osaka
Nanotechnology, 15, S371-S375, Apr. 2004, Peer-reviwed
English

Band discontinuity at ultrathin SiO2/Si(001) interfaces
M Watarai; J Nakamura; A Natori
PHYSICAL REVIEW B, AMERICAN PHYSICAL SOC, 69, 3, 035312-1 - 035312-6, Jan. 2004, Peer-reviwed, An evaluation method of the valence-band discontinuities is proposed, which can be applied to ultrathin interfaces of heterojunctions. We have calculated the layer thickness dependence of the valence-band discontinuities for ultrathin quartz SiO2/Si(001), using the density-functional first-principles calculation in the superlattice structure. The valence-band discontinuity is reduced at the monolayer thickness of SiO2, caused by decrease of the energy gap of monolayer SiO2. The valence-band discontinuity lowers with decreasing Si layer thickness, because of enhancement of quantum confinement effect. The hole penetration depth into SiO2 is evaluated from the decay profile of the Bloch function and the atomistic tunneling behavior is clarified.
Scientific journal, English

Ge/Si(113)-2x2表面の構造安定性と応力異方性
中村淳; 張朝暉; 住友弘二; 尾身博雄; 荻野俊郎; 名取晃子
表面科学, 24, 9, 526-530, Sep. 2003, Peer-reviwed
Japanese

極薄SiO2/Si界面のエネルギー障壁の第一原理計算
渡会雅敏; 中村淳; 名取晃子
表面科学, 24, 9, 550-555, Sep. 2003, Peer-reviwed
Scientific journal, Japanese

Dynamics of c(4 x 2) phase-transition in Si(100) surfaces
A Natori; M Osanai; J Nakamura; H Yasunaga
APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, 212, 705-710, May 2003, Peer-reviwed, The Si(1 0 0) surfaces exhibit an order-disorder phase-transition at the critical temperature T-c from the 2 x 1 structure of apparently symmetric dimers to the c(4 x 2) structure of buckled dimers. We study the flip-flop dynamics of buckled dimers in the vicinity of T-c, using the kinetic Monte Carlo simulation based on the Ising spin model Hamiltonian. Phasons, thermally excited phase defects on alternately buckled dimer rows, play an essential role on both the phase-transition and the flip-flop dynamics of buckled dimers. (C) 2003 Elsevier Science B.V. All rights reserved.
Scientific journal, English

Structural stability of the Ge/Si(113)-2 x 2 surface
J Nakamura; ZH Zhang; K Sumitomo; H Omi; T Ogino; A Natori
APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, 212, 724-729, May 2003, Peer-reviwed, We have investigated the atomic structure and electronic states for the Ge/Si(113)-2 x 2 surface using first-principles total energy calculations. We have found that the model made up of alternating [1 (1) over bar0]-oriented rows of rebonded atoms and tilted pentamers of five atoms with an interstitial atom has the lowest surface energy of the models employed. Furthermore, the local density of states calculated for this surface provides a satisfactory description of recent scanning tunneling microscope images. (C) 2003 Elsevier Science B.V. All rights reserved.
Scientific journal, English

Au/InSb(111)A系における合金形成過程
趙星彪; 原尚子; 成瀬延康; 門平卓也; 中村淳; 大坂敏明
表面科学, 日本表面科学会, 24, 2, 111-117, Feb. 2003, Peer-reviwed
Scientific journal, Japanese

New structure model for the GaAs(001)-c(4x4) surface
A.Ohtake; J.Nakamura; S.Tsukamoto; N.Koguchi; A.Natori
Physical Review Letters, 89, 206102-1 - 206102-4, Oct. 2002, Peer-reviwed
Scientific journal, English

Atomic structures of the Ge/Si(113)-(2X2) surface
ZH Zhang; K Sumitomo; H Omi; T Ogino; J Nakamura; A Natori
PHYSICAL REVIEW LETTERS, AMERICAN PHYSICAL SOC, 88, 25, 256101-1 - 256101-4, Jun. 2002, Peer-reviwed, Based on scanning tunneling microscopy observations of the epitaxial growth of Ge on Si(113) and first-principles total energy and band calculations, we demonstrate that the Ge/Si(113)-(2 X 2) surface is made up of alternating [ (1) over bar 10]-oriented rows of rebonded atoms and tilted pentamers of five atoms, where each pentamer is stabilized by an interstitial atom at the subsurface. From the existence of stacking defects in rows of tilted pentamers observed at room temperature, we have deduced that at epitaxial temperatures the pentamers frequently change their tilting orientations between two minimum energy states.
Scientific journal, English

Theoretical study on the structural phase transition of Si(111)root 3 x root 3-Ag surface
Y Nakamura; Y Kondo; J Nakamura; S Watanabe
SURFACE SCIENCE, ELSEVIER SCIENCE BV, 493, 1-3, 206-213, Nov. 2001, Peer-reviwed, We study the arrangement of Ag atoms of the Si(1 1 1)root3 x root3-Ag surface by Monte Carlo simulations (MCS). For this purpose, an adiabatic potential for Ag atoms representing short-ranged interactions including three-body terms is proposed, and the parameters in it are derived from results of first-principles calculations. We perform MCS with this potential and show that the surface undergoes an order-disorder phase transition with respect to the arrangement of Ag atoms. The transition temperature estimated by the present MCS is consistent with results of scanning tunneling microscopy (STM) observations. Calculated STM images based on results of MCS clearly show that the observed STM images with a honeycomb pattern are well understood by the fluctuation of Ag atoms. (C) 2001 Elsevier Science B.V. All rights reserved.
Scientific journal, English

STM images apparently corresponding to a stable structure: Considerable fluctuation of a phase boundary of the Si(111)-(root 3 x root 3)-Ag surface
Y Nakamura; Y Kondo; J Nakamura; S Watanabe
PHYSICAL REVIEW LETTERS, AMERICAN PHYSICAL SOC, 87, 15, 156102-1-156102-4, Oct. 2001, Peer-reviwed, We study scanning tunneling microscopy (STM) images near a phase boundary of the Si(111)-(root3 x root3-)-Ag surface by using Monte Carlo simulations based on results of first-principles calculations. The boundary is found to fluctuate from snapshot to snapshot, and the feature of the simulated STM images differs distinctly from the observed one with a straightly extending honeycomb pattern of bright spots. Remarkably, statistical averages of the simulated images reproduce the observed feature. This study gives a warning of our tendency to relate STM images revealing clear arrangement of bright spots with some stable structure.
Scientific journal, English

Surface structures of GaAs{111}A,B-(2 × 2)
A. Ohtake; J. Nakamura; T. Komura; T. Hanada; T. Yao; H. Kuramochi; M. Ozeki
Physical Review B - Condensed Matter and Materials Physics, 64, 453181-453188, 15 Jul. 2001, Atomic structures of the GaAs{111}A,B-(2 × 2) surfaces have been studied using reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), and first-principles total-energy calculations. STM observations have revealed that the GaAs(111)A-(2 × 2) surface exhibits large ordered regions having the Ga-vacancy buckling structure, while the GaAs(111)B-(2 × 2) surface consists of small domains, where the As trimers are adsorbed on the outermost As layer. The atomic coordinates for both surface structures have been determined by a rocking-curve analysis using RHEED. The obtained structure parameters are in good agreement with those obtained from first-principles calculations.

Structural and cohesive properties of a C-60 monolayer
J Nakamura; T Nakayama; S Watanabe; M Aono
PHYSICAL REVIEW LETTERS, AMER PHYSICAL SOC, 87, 4, 0483011-0483014, Jul. 2001, Peer-reviwed, We have explored the cohesive property of a monolayer of C-60 molecules (ML-C-60) by means of total energy calculations with the density-functional theory. The total energy curve calculated for ML-C-60, which is obtained as a function of the lattice constant, has two minima and shows a hysteresis in the compression-tension stroke. These two minima in energy correspond to the different structural phases of ML-C-60: one is a monomer phase and the other is a polymer one. The energy band gap within the framework of the local density approximation varies from 1 eV (semiconducting phase) to 0 eV (metallic phase) with external pressure and without structural transition from the monomer phase to the polymer one.
Scientific journal, English

Surface structures of GaAs{111}A,B-(2X2)
A Ohtake; J Nakamura; T Komura; T Hanada; T Yao; H Kuramochi; M Ozeki
PHYSICAL REVIEW B, AMER PHYSICAL SOC, 64, 4, 0453181-0453188, Jul. 2001, Peer-reviwed, Atomic structures of the GaAs{1 1 1}A,B-(2 x 2) surfaces have been studied using reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), and first-principles total-energy calculations. STM observations have revealed that the GaAs(1 1 1)A-(2 x 2) surface exhibits large ordered regions having the Ga-vacancy buckling structure, while the GaAs(1 1 1)B-(2 x 2) surface consists of small domains, where the As trimers are adsorbed on the outermost As layer. The atomic coordinates for both surface structures have been determined by a rocking-curve analysis using RHEED. The obtained structure parameters are in good agreement with those obtained from first-principles calculations.
Scientific journal, English

Structural stability and electronic states of gold nanowires
J Nakamura; N Kobayashi; S Watanabe; M Aono
SURFACE SCIENCE, ELSEVIER SCIENCE BV, 482, 1266-1271, Jun. 2001, Peer-reviwed, We have investigated the structural stability of single and double rows of gold atoms using the first-principles density functional calculations. In both wires, the zigzag geometry is more stable than the rectilinear one, showing the aspect of structural bistability. The number of channels open for conduction has also been evaluated on the basis of the number of bands which cross the Fermi level. In the zigzag geometry, the number of channels changes in the order of 2, 1, 0 with stretching the wire, which is consistent with recent measurements. (C) 2001 Elsevier Science B.V. All rights reserved.
Scientific journal, English

Anisotropic electronic structure of the Si(111)-(4x1)In surface
J Nakamura; S Watanabe; M Aono
PHYSICAL REVIEW B, AMER PHYSICAL SOC, 63, 19, 193307-1-193307-4, May 2001, Peer-reviwed, We have investigated the atomic structure and electronic states of the Si(111)-(4 x 1) In surface using the first-principles total energy calculations. The atomic coordinates optimized for this surface are in excellent agreement with those obtained from the recent x-ray diffraction experiment [Bunk er al., Phys. Rev. B 59, 12 228 (1999)]. The calculated surface electronic structure, which is anisotropic, provides a satisfactory description of angle-resolved photoemission data. These calculations provide strong support for the model proposed by Bunk et al.
Scientific journal, English

Wurtzite-zinc-blende polytypism in ZnSe on GaAs(111)A
A Ohtake; J Nakamura; M Terauchi; F Sato; M Tanaka; K Kimura; T Yao
PHYSICAL REVIEW B, AMER PHYSICAL SOC, 63, 19, 195325-1-195325-4, May 2001, Peer-reviwed, We have studied the wurtzite (W)-zinc-blende (ZB) polytypism in ZnSe films grown on the (111)A-oriented substrates of GaAs. Although the stable structure of bulk ZnSe is ZB, W-structured ZnSe is formed near the interface on the ZB-structured GaAs(111)A substrate. Our first-principles calculations have revealed that the charge state at the ZnSe/GaAs(111)A interface plays a key role in the formation of W-ZnSe. We show that the structural quality of W-ZnSe is significantly improved using a cracked Se source, while ZB-ZnSe is grown using a vicinal GaAs(111)A substrate.
Scientific journal, English

Surface structures of (formula presented)
Akihiro Ohtake; Jun Nakamura; Takuji Komura; Takashi Hanada; Takafumi Yao; Hiromi Kuramochi; Masashi Ozeki
Physical Review B - Condensed Matter and Materials Physics, 64, 4, 2001, Peer-reviwed, Atomic structures of the (formula presented) surfaces have been studied using reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), and first-principles total-energy calculations. STM observations have revealed that the (formula presented) surface exhibits large ordered regions having the Ga-vacancy buckling structure, while the (formula presented) surface consists of small domains, where the As trimers are adsorbed on the outermost As layer. The atomic coordinates for both surface structures have been determined by a rocking-curve analysis using RHEED. The obtained structure parameters are in good agreement with those obtained from first-principles calculations. © 2001 The American Physical Society.
Scientific journal, English

Electronic states and structural stability of gold nanowires
Jun Nakamura; Nobuhiko Kobayashi; Masakazu Aono
RIKEN Review, 37, 17-20, 2001, Peer-reviwed
Research institution, English

Structural and electronic properties of two-dimensional C60
Jun Nakamura; Tomonobu Nakayama; Satoshi Watanabe; Masakazu Aono
Trans.Mat.Res.Soc.Jpn., 26, 1167-1170, 2001, Peer-reviwed
Scientific journal, English

Structural ordering on Si(111)root 3 x root 3-Ag surface: Monte Carlo simulation based on first-principles calculations
Y Nakamura; Y Kondo; J Nakamura; S Watanabe
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, SPRINGER-VERLAG BERLIN, 87, 295-296, 2001, Peer-reviwed, We study the arrangement of Ag atoms of the Si(111) root3 x root3-Ag surface by Monte Carlo simulations (MCS) based on results of first-principles calculation (FPC). Introducing three-body term into the adiabatic potential for Ag atoms is very important to describe energies of possible configurations. Calculated STM images based on results of MCS clearly show that the observed STM images with a honeycomb pattern are well understood by the fluctuation of Ag atoms.
International conference proceedings, English

Strain relaxation in InAs/GaAs(111)A heteroepitaxy
A Ohtake; M Ozeki; J Nakamura
PHYSICAL REVIEW LETTERS, AMERICAN PHYSICAL SOC, 84, 20, 4665-4668, May 2000, Peer-reviwed, We have studied strain-relaxation processes in InAs heteroepitaxy on GaAs(lll)A using rocking-curve analysis of reflection high-energy electron diffraction. Strain relaxation in the direction parallel to the surface occurs at similar to 1.5 bilayers (BL) thickness. On the other hand, the lattice constant in the direction normal to the surface remains almost unchanged below similar to 3 BL thickness and is estimated to be similar to 3.3 Angstrom. This value, slightly larger than that of bulk GaAs (3.26 Angstrom), does not quite reach the value predicted by classical elastic theory, 3.64 Angstrom. The present result has been supported by the first-principles total-energy calculations.
Scientific journal, English

Study of diffusion and defects by medium-energy coaxial impact-collision ion scattering spectroscopy
T Kobayashi; CF McConville; J Nakamura; G Dorenbos; H Sone; T Katayama; M Aono
DEFECTS AND DIFFUSION IN SEMICONDUCTORS, SCITEC PUBLICATIONS LTD, 183-1, 207-213, 2000, Peer-reviwed, Medium-energy coaxial impact-collision ion scattering spectroscopy has been used to study depth profiles and lattice locations of Sb atoms in Si/Sb(delta-doped)/Si(001) structures prepared by solid phase epitaxy. The Sb atoms are observed to diffuse into the Si capping layer at concentrations much higher than the solid solubility limit in a Si crystal. In addition, the concentration of diffused Sb atoms does not show a monotonic decrease with increasing distance from the delta-layer plane. The lattice locations of the diffused Sb atoms are found to be strongly dependent on the distance from the original Sb delta-layer. Correspondences are found between defects in Si crystals and the depth profile and the lattice location of Sb atoms. The results show that medium-energy coaxial impact-collision ion scattering spectroscopy is useful for analyzing diffusion and defects in semiconductors.
Scientific journal, English

Atomic and electronic structure of the Si(111)-root 3x root 3-Ag surface reexamined using first-principles calculations
S. Watanabe; Y. Kondo; Y. Nakamura; J. Nakamura
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, TAYLOR & FRANCIS LTD, 1, 3, 167-172, 2000, Peer-reviwed, We have reexamined the atomic and electronic structures of the Si(111)-root 3x root 3-Ag surface using first-principles calculations within the local density functional approach. First, we found that a discrepancy among previous first-principles studies concerning the honeycombchained-triangle (HCT) model, which was believed to describe the structure of the surface, can be attributed to the difference in the structural parameters adopted in the calculations. Second, we have confirmed that the recently proposed inequivalent triangle (IET) model, where the positions of the Ag atoms are distorted a little from those in the HCT, is energetically more stable than the HCT one. We have also examined several other models that have distortions similar to the IET one. The results suggest that at room temperature the surface does not stay in the HCT configuration, but fluctuates between various configurations. (C) 2000 Elsevier Science Ltd. All rights reserved.
Scientific journal, English

Photoinduced products in a C-60 monolayer on Si(111)(root 3x root 3)-Ag: An STM study
T Nakayama; J Onoe; K Nakatsuji; J Nakamura; K Takeuchi; M Aono
SURFACE REVIEW AND LETTERS, WORLD SCIENTIFIC PUBL CO PTE LTD, 6, 6, 1073-1078, Dec. 1999, Peer-reviwed, Irradiation of ultraviolet-visible light onto a C-60 monolayer on Si(111)(root 3 x root 3)R30 degrees-Ag resulted in a chemical reaction between adjacent C-60 molecules, as confirmed by scanning tunneling microscopy (STM) images. The major photoinduced products were double-bonded (two covalent C-C bonds between molecules) C-60 dimers and linear trimers. We also found single-bonded (single covalent bond between molecules) C-60 dimers and linear trimers, and two-dimensional C-60 oligomers as minor products. Observed atomic geometry of the nonbonding contact between a C-60 dimer (or a trimer) and a neighboring dimer (or a trimer), which are parallel to each other regarding their axes, is different from that reported between C-60 molecules in three-dimensional C-60 crystals, where there is no interaction with a substrate.
Scientific journal, English

Structure and electronic states for a single strand of gold atoms
J.Nakamura; M.Aono
RIKEN Review, 25, 34-36, 1999, Peer-reviwed
Research institution, English

Chemical bonding features for faultily stacked interfaces of GaAs{111}
J Nakamura; T Mishima; MH Masui; M Sawayanagi; SP Cho; M Nishizawa; T Eguchi; T Osaka
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, A V S AMER INST PHYSICS, 16, 4, 2426-2431, Jul. 1998, Peer-reviwed, The electronic states for normally stacked and faultily stacked layers on the GaAs{111} A, B surfaces are calculated by use of the discrete variational X alpha cluster method and the plane wave nonlocal pseudopotential method. The results show that chemical bondings between atoms are not as ionic in the faultily stacked layer of (111) B as they are in the (111)A case, and that on the (111) A surface more attractive Coulomb interaction energy is gained in the faulty stacking layer than in the normal stacking one. These results explain well the more frequent emergence of in-plane faults in the (111) A surface, which is well known in GaAs{111} A, B growth experiments. The total energy calculations also provide quantitative interpretation of such growth features. (C) 1998 American Vacuum Society.
Scientific journal, English

Direct imaging of the evolving Au/InSb(III) B interface
T Mishima; J Nakamura; K Tsukada; M Nishizawa; T Eguchi; T Osaka
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, AMER INST PHYSICS, 16, 4, 2324-2327, Jul. 1998, Peer-reviwed, In situ high-resolution transmission electron microscopy in the profile geometry has been used to observe the evolving features of the Au/InSb(111) B-(2 x 2) interface. During Au deposition in the range between 0 monolayer (ML) and similar to 1 ML coverage, the outermost Sb-trimer layer of the InSb(111) B-(2x2) substrate changes in contrast, presumably revealing that deposited Au atoms are partially captured into it. At similar to 2 ML coverage, an unknown phase emerges on the outermost layer, beyond which it continues to grow epitaxially in an island state, causing partial disruption of the substrate. The phase is identified as Au9In4 alloy with a gamma-brass structure determined from a digital Fourier transform diffractogram and a transmission electron diffraction pattern. The epitaxial relationship of Au9In4 with the substrate is given by (111)InSb parallel to(111) Au9In4 and [1(1) over bar 0] InSb parallel to[1(1) over bar 0] Au9In4. The high resolution-profile transmission electron microscopy images of this alloy agree well with the results calculated by the multislice method. (C) 1998 American Vacuum Society.
Scientific journal, English

Structure of the InSb(111)A-(2 root 3x2 root 3)-R30 degrees surface and its dynamical formation processes
M Nishizawa; T Eguchi; T Misima; J Nakamura; T Osaka
PHYSICAL REVIEW B, AMER PHYSICAL SOC, 57, 11, 6317-6320, Mar. 1998, Peer-reviwed, We have studied the structure of the InSb(111)A-(2 root 3 x 2 root 3)-R30 degrees surface and how it is transformed from the original (2x2) surface under Sb-rich conditions, by using scanning tunneling microscopy, Anger electron spectroscopy, and reflection high-energy electron diffraction. In the 2 root 3 structure a Sb trimer settles its center on the In vacancy site of the (2x2) surface, and the three In atoms are further missing from it. These missing In atoms are consumed in a way that, while Sb is deposited onto the (2x2) surface at 230 degrees C, the 2 root 3 surface grows along a direction normal to the step edge, increasing the terrace area and causing the step edge to become ragged.
Scientific journal, English

Structure and electronic states of the alpha-Sn(111)-(2x2) surface
T Eguchi; J Nakamura; T Osaka
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, PHYSICAL SOC JAPAN, 67, 2, 381-384, Feb. 1998, Peer-reviwed, Scanning tunneling microscopy (STM) has been used to study the surface structure and electronic states of alpha-Sn(111) films grown heteroepitaxially on InSb(111)A-(2 x 2). The wide area STM image shows a large number of domains existing on the terrace, each having an average size of about 100 Angstrom and a period of (2 x 2). The magnified image shows evidence of a T-4-adatom and rest-atom pair reconstructed structure for the alpha-Sn(111)-(2 x 2) surface, as expected from the ab initio calculations. Furthermore, the result that the adatom and the rest-atom appear simultaneously in the occupied state image can be explained by the existence of back bond states in the adatom configuration.
Scientific journal, English

Reflection high-energy electron diffraction analysis of the InSb{111}A,B-(2x2) surfaces
A Ohtake; J Nakamura
SURFACE SCIENCE, ELSEVIER SCIENCE BV, 396, 1-3, 394-399, Jan. 1998, Peer-reviwed, Reflection high-energy electron diffraction has been used in a structure analysis of In-stabilized (111)A-(2 x 2) and Sb-stabilized (111)B-(2 x 2) surfaces of InSb grown by molecular beam epitaxy. The analysis provides information about their atomic coordinates in the surface normal direction: InSb(111)A-(2 x 2) has a vertically compressed surface bilayer with a spacing of 0.25 Angstrom. For InSb(111)B-(2 x 2), Sb-trimers are adsorbed at 2.8 Angstrom above the first Sb layer, which induces a prominent relaxation in the subsurface layers. (C) 1998 Published by Elsevier Science B.V.
Scientific journal, English

Nucleation of Au on KCl(001)
J Nakamura; T Kagawa; T Osaka
SURFACE SCIENCE, ELSEVIER SCIENCE BV, 389, 1-3, 109-115, Nov. 1997, Peer-reviwed, We have studied the nucleation of An on the step and terrace of a KCl(001) surface by using molecular-dynamics and potential energy calculations. The results obtained are as follows: coming near the step, an Au atom diffuses toward the ledge of the step and then moves along the ledge. The subsequent stage is that the nucleation of Au is initiated with the formation of a dimer which has an activation energy barrier high enough for its dissociation. On the terrace, since the Au atoms move around, they have little chance to meet with each other. Even if two Au atoms accidentally form a dimer, ii is unlikely to be stably nucleated because of easier dissociation and/or migration. (C) 1997 Elsevier Science B.V.
Scientific journal, English

Structural stability and its electronic origin of the GaAs(111)A-2x2 surface
J Nakamura; H Nakajima; T Osaka
APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, 121, 249-252, Nov. 1997, Peer-reviwed, The stability of the vacancy-buckling (VB) structure of the GaAs(111)A-2 x 2 surface is investigated with the use of the first-principles total energy pseudopotential and the discrete variational X alpha methods within the local-density-functional formalism. An origin of the structural stability can be explained as follows: The electronegativities of Ga (As) dangling orbitals in the VB surface become smaller (larger) than those of the ideally sp(3)-hybridized orbital. This induces a charge transfer from the Ga to the As atom, to reduce unsaturated bonds at the surface. Further, the grey-scale schema of the calculated partial charge density agrees well with the images obtained from the most recent scanning tunneling microscopy experiments, (C) 1997 Elsevier Science B.V.
Scientific journal, English

s-character of MX4 (M=C, Si, Ge, X=F, Cl, Br, I) molecules
J Nakamura; H Konogi; H Sato; T Osaka
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, PHYSICAL SOC JAPAN, 66, 6, 1656-1659, Jun. 1997, Peer-reviwed, Chemical bonding states for a series of MX4 (M=C, Si, Ge, X=F, C1, Br, I) molecules have been studied with use of self-consistent-charge-X alpha calculations. The results show that the s-character, s/(s+p) of the sp(3)-hybridized orbitals of M atoms changes every MX4 molecules, to which the electronegativity of the M-sp(3) orbitals is in a linear relationship. These findings assist to understand chemical bonding features which are inherent in these quadricovalent molecules.
Scientific journal, English

Initial growth processes of Ag on polar and non-polar semiconductor substrates
A Ohtake; J Nakamura; T Osaka
SURFACE SCIENCE, ELSEVIER SCIENCE BV, 380, 1, L437-L440, May 1997, Peer-reviwed, Initial growth processes of Ag on both InSb(lll)A and alpha-Sn(lll) substrates at room temperature have been investigated by using reflection high-energy electron diffraction and Auger electron spectroscopy. The results show that the growth features are quite different for each system: Ag grows in the Stranski-Krastanov mode on InSb(lll)A, while for Ag/alpha-Sn(lll) the majority of the deposited Ag atoms are consumed in forming an Ag-Sn alloy. Discrete variational-X alpha calculations showed that an onset of such growth modes is closely related to interfacial chemical bonding features for both systems.
Scientific journal, English

Geometry and lattice formation of surface layers of Sn growing on InSb{111}A,B
A Ohtake; J Nakamura; T Eguchi; T Osaka
PHYSICAL REVIEW B, AMERICAN PHYSICAL SOC, 54, 15, 10358-10361, Oct. 1996, Peer-reviwed, Surfaces of Sn growing on InSb{111}A,B have been studied by using the reflection high-energy electron-diffraction intensity oscillation technique. The surfaces proceed in the formation of a bilayered lattice in the whole range of film thickness. However, the geometry of the outermost surface layer is quite different in bath systems: The growing surface on InSb(111)A smoothens with the same period as the lattice formation, whereas on InSb(lll)B, below and above 6 ML of Sn, smooth surfaces emerge every period of monolayer and bilayer, respectively. The monolayer-period change in surface geometry is ascribed to Sb segregation on the growing surface.
Scientific journal, English

Surfactant-induced bond strengthening in As-grown film surfaces
J Nakamura; H Konogi; T Osaka
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, JAPAN J APPLIED PHYSICS, 35, 4A, L441-L443, Apr. 1996, Peer-reviwed, The role of surfactant (Sb) in the two-dimensional (2D) growth of Ge films on Sb-adsorbed Si(lll) surfaces is investigated using the discrete variational (DV) - X alpha cluster method. The results show that the Sb surfactant strengthens bonds between Ge atoms of the film surface, to the extent of those in bulk Ge, and enables them to realize an sp(3)-like configuration. This indicates why the critical thickness is increased in this system: the surfactant-induced bond strengthening renders the film surface hard like that of bulk Ge, induces dislocations to nucleate at the surface; and enables the Ge film to grow in a defect-free state, as expected based on the self-annihilation mechanism proposed by Horn-von Hoegen et al. [M. Horn-von Hoegen et al. Phys. Rev. Lett. 67 (1991) 1130].
Scientific journal, English

Geometry and lattice formation of surface layers of Sn growing on InSb(111)\\A, B
Akihiro Ohtake; Jun Nakamura; Toyoaki Eguchi; Toshiaki Osaka
Physical Review B - Condensed Matter and Materials Physics, 54, 15, 10358-10361, 1996, Surfaces of Sn growing on InSb(111)\\A, B have been studied by using the reflection high-energy electron-diffraction intensity oscillation technique. The surfaces proceed in the formation of a bilayered lattice in the whole range of film thickness. However, the geometry of the outermost surface layer is quite different in both systems: The growing surface on InSb(111)A smoothens with the same period as the lattice formation, whereas on InSb(111)B, below and above 6 ML of Sn, smooth surfaces emerge every period of monolayer and bilayer, respectively. The monolayer-period change in surface geometry is ascribed to Sb segregation on the growing surface. © 1996 The American Physical Society.
Scientific journal, English

INHOMOGENEOUS CHARGE-TRANSFER IN AN INCOMMENSURATE SYSTEM
J NAKAMURA; H KONOGI; T OSAKA
PHYSICAL REVIEW B, AMERICAN PHYSICAL SOC, 51, 8, 5433-5436, Feb. 1995, Peer-reviwed
Scientific journal, English

オゾンの効率的な生成を促す局所原子配列
中村淳
日本表面真空学会, 10 Oct. 2021, 表面と真空, 64, 10, 482-482, Japanese, Peer-reviwed, Invited, Introduction scientific journal

Plasma in Solution and Its Applications FOREWORD
Nagahiro Saito; Jun Nakamura; Tatsuru Shirafuji; Takahiro Ishizaki
IOP PUBLISHING LTD, Jan. 2018, JAPANESE JOURNAL OF APPLIED PHYSICS, 57, 1, 010201, English, Others, 0021-4922, 1347-4065, WOS:000414177400001

26pPSB-36 Atomic arrangement and electronic states of the GaAs(001)-(2x2)Mn surface
Kanno Yusuke; Ohtake Akihiro; Nakamura Jun
The Physical Society of Japan (JPS), 05 Mar. 2012, Meeting abstracts of the Physical Society of Japan, 67, 1, 964-964, Japanese, 1342-8349, 110009568361, AA11439205

23pPSB-7 Atomic arrangement and electronic states of the GaAs(001)-(2×2)Mn surface
Kanno Yusuke; Ohtake Akihiro; Hirayama Motoi; Nakamura Jun
The Physical Society of Japan (JPS), 24 Aug. 2011, Meeting abstracts of the Physical Society of Japan, 66, 2, 946-946, Japanese, 1342-8349, 110008760711, AA11439205

23aWS-9 Atomic structure of Sb-stabilized GaSb(001)-(2x5) surface
Ohtake A.; Hirayama M.; Nakamura J.
The Physical Society of Japan (JPS), 18 Aug. 2010, Meeting abstracts of the Physical Society of Japan, 65, 2, 838-838, Japanese, 1342-8349, 110008099606, AA11439205

21aGL-7 The effect of the oxygen vacancy on the local dielectric constant in the SiO_2 and HfO_2 films
Wakui S.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 01 Mar. 2010, Meeting abstracts of the Physical Society of Japan, 65, 1, 934-934, Japanese, 1342-8349, 110007657266, AA11439205

21aHW-4 Well-width Dependence on D-binding Energy in the Si/SiO_2 quantum wells : Effect of Valley-orbit interaction
Chiba Tomo; Nakamura Jun; Natori Akiko
The Physical Society of Japan (JPS), 01 Mar. 2010, Meeting abstracts of the Physical Society of Japan, 65, 1, 714-714, Japanese, 1342-8349, 110007656460, AA11439205

22pGL-5 Magnetic properties of single MnAs layer on GaAs(110)
Hirayama Motoi; Nakamura Jun; Natori Akiko
The Physical Society of Japan (JPS), 01 Mar. 2010, Meeting abstracts of the Physical Society of Japan, 65, 1, 954-954, Japanese, 1342-8349, 110007657336, AA11439205

23aXB-1 Sb-induced GaAs(001)-(2x4) reconstruction revisited
Ohtake A.; Hirayama M.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 25 Aug. 2008, Meeting abstracts of the Physical Society of Japan, 63, 2, 849-849, Japanese, 1342-8349, 110006985646, AA11439205

20aXA-14 Magnetic properties of the Ga-substituted Mn atomic wire on GaAs (110)
Hirayama Motoi; Nakamura Jun; Natori Akiko
The Physical Society of Japan (JPS), 25 Aug. 2008, Meeting abstracts of the Physical Society of Japan, 63, 2, 363-363, Japanese, 1342-8349, 110006983801, AA11439205

22pTA-12 Ballistic thermal conductance of graphene ribbons
Yamaguchi S.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 25 Aug. 2008, Meeting abstracts of the Physical Society of Japan, 63, 2, 769-769, Japanese, 1342-8349, 110006985341, AA11439205

25pWF-11 Mechanism of the atomic scale friction force : An effect of the tip size
Igarashi Masanori; Nakamura Jun; Natori Akiko
The Physical Society of Japan (JPS), 29 Feb. 2008, Meeting abstracts of the Physical Society of Japan, 63, 1, 316-316, Japanese, 1342-8349, 110007196323, AA11439205

26pTD-9 First-principles calculation of STM images for impurity doped Si(111)H surfaces : Dopant species dependence on the STM image
Hirayama Motoi; Nakamura Jun; Natori Akiko
The Physical Society of Japan (JPS), 29 Feb. 2008, Meeting abstracts of the Physical Society of Japan, 63, 1, 908-908, Japanese, 1342-8349, 110007194323, AA11439205

25pTD-3 First-principles calculations of the nanoscale dielectric constant for SiO_2/Si(001)
Wakui S.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 29 Feb. 2008, Meeting abstracts of the Physical Society of Japan, 63, 1, 892-892, Japanese, 1342-8349, 110007194376, AA11439205

22aPS-124 Ballistic thermal conductance of a graphene sheet
Saito K.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 21 Aug. 2007, Meeting abstracts of the Physical Society of Japan, 62, 2, 693-693, Japanese, 1342-8349, 110007142740, AA11439205

21aTG-9 First principles calculation of structural bistability of O adsorbed graphene sheets
Ito J.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 28 Feb. 2007, Meeting abstracts of the Physical Society of Japan, 62, 1, 920-920, Japanese, 1342-8349, 110007192295, AA11439205

18pTG-9 First-principles calculations of nanoscale dielectric constants at SiO_2/Si(001) interfaces
Wakui S.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 28 Feb. 2007, Meeting abstracts of the Physical Society of Japan, 62, 1, 878-878, Japanese, 1342-8349, 110007192364, AA11439205

18pTG-10 First-principles calculation of STM image for B/P-doped Si(111)H surfaces
Hirayama Motoi; Nakamura Jun; Natori Akiko
The Physical Society of Japan (JPS), 28 Feb. 2007, Meeting abstracts of the Physical Society of Japan, 62, 1, 878-878, Japanese, 1342-8349, 110007192363, AA11439205

18pWH-4 Mechanism in atomic-scale friction : One-dimensional Tomlinson model at finite temperatures
Nakamura Jun
The Physical Society of Japan (JPS), 28 Feb. 2007, Meeting abstracts of the Physical Society of Japan, 62, 1, 880-880, Japanese, 1342-8349, 110007191575, AA11439205

23pYH-3 A mechanism of the saturation of atomic friction force
Igarashi Masanori; Nakamura Jun; Natori Akiko
The Physical Society of Japan (JPS), 18 Aug. 2006, Meeting abstracts of the Physical Society of Japan, 61, 2, 727-727, Japanese, 1342-8349, 110007179456, AA11439205

29pXB-13 Magnetic Field Controlling of the spin coupling in double quantum dots
Masu H.; Yamada T.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 04 Mar. 2006, Meeting abstracts of the Physical Society of Japan, 61, 1, 698-698, Japanese, 1342-8349, 110007178048, AA11439205

29pXJ-1 Dielectric discontinuity at a twin boundary of the Si (111) film
Nakamura Jun; Natori Akiko
The Physical Society of Japan (JPS), 04 Mar. 2006, Meeting abstracts of the Physical Society of Japan, 61, 1, 889-889, Japanese, 1342-8349, 110007179750, AA11439205

21aPS-51 Atomic scale mechanism of friction
Wakunami S.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 19 Aug. 2005, Meeting abstracts of the Physical Society of Japan, 60, 2, 767-767, Japanese, 1342-8349, 110004559841, AA11439205

21pYE-7 Dielectric Properties for ultra-thin films of the polytypes of SiC
Nakamura Jun; Natori Akiko
The Physical Society of Japan (JPS), 19 Aug. 2005, Meeting abstracts of the Physical Society of Japan, 60, 2, 780-780, Japanese, 1342-8349, 110004559896, AA11439205

20aYE-7 First-principles calculations of dielectric constants for ultrathin SiO_2 films
Wakui S.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 19 Aug. 2005, Meeting abstracts of the Physical Society of Japan, 60, 2, 742-742, Japanese, 1342-8349, 110004559751, AA11439205

22pYE-3 First principles calculation on adsorption and diffusion of O on graphene sheets
Ito J.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 19 Aug. 2005, Meeting abstracts of the Physical Society of Japan, 60, 2, 791-791, Japanese, 1342-8349, 110004559940, AA11439205

27aXD-9 Magnetic properties of BNC ribbons II
Nitta T.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 04 Mar. 2005, Meeting abstracts of the Physical Society of Japan, 60, 1, 882-882, Japanese, 1342-8349, 110004537427, AA11439205

24aPS-145 Atomic Structures and Electronic States of Planar Silicon Compounds
Hirayama Motoi; Nakamura Jun; Natori Akiko
The Physical Society of Japan (JPS), 04 Mar. 2005, Meeting abstracts of the Physical Society of Japan, 60, 1, 838-838, Japanese, 1342-8349, 110004537264, AA11439205

15pXG-14 Energy barrier for dimmer flipping at Si(001)-2×1 in external electric fields
Nakamura Jun; Natori Akiko
The Physical Society of Japan (JPS), 25 Aug. 2004, Meeting abstracts of the Physical Society of Japan, 59, 2, 849-849, Japanese, 1342-8349, 110002050816, AA11439205

15aPS-9 High frequency properties of electrical conduction in metal-insulator composite materials
Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 25 Aug. 2004, Meeting abstracts of the Physical Society of Japan, 59, 2, 825-825, Japanese, 1342-8349, 110002050521, AA11439205

15aPS-10 Magic size and friction of atomic clusters on heterogeneous substrates
Ohno K.; Nitta T.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 25 Aug. 2004, Meeting abstracts of the Physical Society of Japan, 59, 2, 825-825, Japanese, 1342-8349, 110002050524, AA11439205

15pXG-4 Stable and metastable structures of GaAs(001)-c(4×4)
Ohtake A.; Kocan P.; Nakamura J.; Natori A.; Koguchi N.
The Physical Society of Japan (JPS), 25 Aug. 2004, Meeting abstracts of the Physical Society of Japan, 59, 2, 847-847, Japanese, 1342-8349, 110002050786, AA11439205

15aPS-81 Magnetic properties of BN ribbons
Nitta T.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 25 Aug. 2004, Meeting abstracts of the Physical Society of Japan, 59, 2, 842-842, Japanese, 1342-8349, 110002050736, AA11439205

14aXG-3 Dielectric properties of ultra-thin Si films
Nakamura Jun; Natori Akiko
The Physical Society of Japan (JPS), 25 Aug. 2004, Meeting abstracts of the Physical Society of Japan, 59, 2, 813-813, Japanese, 1342-8349, 110002050388, AA11439205

29pYA-7 Spin Coupling in Double Quantum Dots
Yamada T.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 03 Mar. 2004, Meeting abstracts of the Physical Society of Japan, 59, 1, 696-696, Japanese, 1342-8349, 110002195930, AA11439205

30aWP-5 Dielectric properties of Si ultra-thin films
Ishihara S.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 03 Mar. 2004, Meeting abstracts of the Physical Society of Japan, 59, 1, 927-927, Japanese, 1342-8349, 110002200323, AA11439205

28pWP-3 Study on the Au/Si(111) -(√<3>×√<3>) surface structure by first principle calculations
Kadohira T.; Nakamura J.; Watanabe S.
The Physical Society of Japan (JPS), 03 Mar. 2004, Meeting abstracts of the Physical Society of Japan, 59, 1, 913-913, Japanese, 1342-8349, 110002200092, AA11439205

First-principles analysis for electrostatic response of ultra-thin films
Nakamura Jun; Ishihara shunsuke; Shimizu Tomo; Natori Kenji; Natori Akiko
The Physical Society of Japan (JPS), 15 Aug. 2003, Meeting abstracts of the Physical Society of Japan, 58, 2, 772-772, Japanese, 1342-8349, 110002063987, AA11439205

Defected Ga-As dimer structure on the GaAs (001)-c (4x4) surface
Ohtake A.; Nakamura J.; Tsukamoto S.; Koguchi N.; Natori A.
The Physical Society of Japan (JPS), 06 Mar. 2003, Meeting abstracts of the Physical Society of Japan, 58, 1, 852-852, Japanese, 1342-8349, 110002223443, AA11439205

Control of spin coupling in coupled quantum dots
Seshimo Y.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 06 Mar. 2003, Meeting abstracts of the Physical Society of Japan, 58, 1, 663-663, Japanese, 1342-8349, 110002220598, AA11439205

Anisotropic surface stress of Ge/Si(113)-2×2
Nakamura Jun; Zhang Z.; Sumitomo K.; Omi H.; Ogino T.; Natori Akiko
The Physical Society of Japan (JPS), 06 Mar. 2003, Meeting abstracts of the Physical Society of Japan, 58, 1, 879-879, Japanese, 1342-8349, 110002223840, AA11439205

A new structure model proposed for the GaAs(001)-c(4×4) surface
Ohtake A.; Nakamura J.; Tsukamoto S.; Koguchi N.; Natori A.
The Physical Society of Japan (JPS), 13 Aug. 2002, Meeting abstracts of the Physical Society of Japan, 57, 2, 753-753, Japanese, 1342-8349, 110009719782, AA11439205

Tunneling properties of SiO2 ultra thin films
Watarai M.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 13 Aug. 2002, Meeting abstracts of the Physical Society of Japan, 57, 2, 761-761, Japanese, 1342-8349, 110009719815, AA11439205

25pPSB-60 Two-dimensional current distribution between two current probesin inhomogeneous surfaces
Natori A.; Itoh T.; Nakamura J.; Yasunaga H.
The Physical Society of Japan (JPS), 01 Mar. 2002, Meeting abstracts of the Physical Society of Japan, 57, 1, 850-850, Japanese, 1342-8349, 110009774499, AA11439205

25pPSB-43 Dimer buckling dynamics on Si(100) surfaces
Osanai M.; Nakamura J.; Yasunaga H.; Natori A.
The Physical Society of Japan (JPS), 01 Mar. 2002, Meeting abstracts of the Physical Society of Japan, 57, 1, 846-846, Japanese, 1342-8349, 110009774482, AA11439205

As安定化GaAs(001)-c(4x4)表面に対する新たな構造モデル
大竹晃浩; 中村淳; 塚本史郎; 小口信行; 名取晃子
2002, 応用物理学会学術講演会講演予稿集, 63rd, 1, 200902161685841903

Structural stability of the Ge/Si(113)-2x2 surface
Nakamura Jun; Zhang Z.; Sumitomo K.; Omi H.; Ogino T.; Natori A.
The Physical Society of Japan (JPS), 03 Sep. 2001, Meeting abstracts of the Physical Society of Japan, 56, 2, 762-762, Japanese, 1342-8349, 110002048708, AA11439205

Multipole Polarizabilities of Closed Shell Ions and Atoms
Nakamura Jun
The Physical Society of Japan (JPS), 10 Sep. 2000, Meeting abstracts of the Physical Society of Japan, 55, 2, 591-591, Japanese, 1342-8349, 110002146527, AA11439205

6p-B-11 Structure and electronic states of the α-Sn(111)-(2×2)surface II
Nakamura Jun.; Eguchi Toyoaki; Osaka Toshiaki
The Physical Society of Japan (JPS), 16 Sep. 1997, Meeting abstracts of the Physical Society of Japan, 52, 2, 351-351, Japanese, 1342-8349, 110002061165, AA11439205

5a-H-11 Structure and electronic states of the α-Sn(111)-(2×2)surface I
Eguchi Toyoaki; Nakamura Jun; Osaka Toshiaki
The Physical Society of Japan (JPS), 16 Sep. 1997, Meeting abstracts of the Physical Society of Japan, 52, 2, 336-336, Japanese, 1342-8349, 110002061041, AA11439205

RHEED rocking curve analysis for the Si(111)√3×√3R30°-Au surface
Nakagawa A.; Nakamura J.; Ohtake A.; Osaka T.
The Physical Society of Japan (JPS), 13 Sep. 1996, Abstracts of the meeting of the Physical Society of Japan. Sectional meeting, 1996, 2, 643-643, Japanese, 110001985938, AN10453836

30a-PS-29 RHEED rocking curve analysis of InSb{111}A, B surfaces
Ohtake Akihiro; Nakamura Jun; Osaka Toshiaki
The Physical Society of Japan (JPS), 12 Sep. 1995, Abstracts of the meeting of the Physical Society of Japan. Sectional meeting, 1995, 2, 523-523, Japanese, 110001982549, AN10453836

Molecular Technology, Volume 3: Materials Innovation (hardcover)
Gasidit Panomsuwan; Tomonaga Ueno; Hiroharu Yui; Jun Nakamura; Nagahiro Saito
Scholarly book, English, Contributor, Section 7. Solution Plasma Reactions and Materials Synthesis, Wiley, Apr. 2019, 9783527341610

Molecular Technology, Volume 3: Materials Innovation (e-book)
Gasidit Panomsuwan; Tomonaga Ueno; Hiroharu Yui; Jun Nakamura; Nagahiro Saito
Scholarly book, English, Contributor, Section 7. Solution Plasma Reactions and Materials Synthesis, Wiley, Feb. 2019, 9783527802722

グラフェンの機能と応用展望《普及版》
中村淳
Scholarly book, Japanese, Joint work, 第４章：酸化グラフェンとコンポジット材料の電子状態, シー・エム・シー出版, 08 Sep. 2015, 9784781310305

応用物理分野のアカデミック・ロードマップ（改訂版）
荒川泰彦
Japanese, Joint work, No.19 人材育成, 応用物理学会 ISBN 978-4-86348-073-5, Mar. 2010

応用物理分野の発展史マップ
荒川泰彦
Japanese, Joint work, No.19 人材育成, 応用物理学会 ISBN 978-4-86348-074-2, Mar. 2010

グラフェンの機能と応用展望
中村淳他
Scholarly book, Japanese, Joint work, 第４章：酸化グラフェンとコンポジット材料の電子状態, シー・エム・シー出版, Jul. 2009, 9784781301464

応用物理分野のアカデミック・ロードマップの作成報告書 ISBN 978-4-903968-50-6
応用物理学会編
Japanese, Joint work, No.18人材育成, （社）応用物理学会, Mar. 2008

学術会議叢書１２ 「どこまで進んだ男女共同参画」
中村淳
Japanese, Joint work, 若手・女性研究者の研究環境, （財）日本学術協力財団, Sep. 2006

新訂版・表面科学の基礎と応用
中村淳
Japanese, Joint work, エヌ・ティー・エス, Jun. 2004

A simulation for the in-plane distribution of the surface dipole moment using DFT calculations (S7-2)
A.Sumiyoshi; K.Yamasue; Y.Cho; J.Nakamura
Oral presentation, English, 31st International Colloquium on Scanning Probe Microscopy (ICSPM31), Peer-reviewed, International conference
08 Dec. 2023
07 Dec. 2023- 08 Dec. 2023

Edge-Driven Electronic Properties in Bilayer Zigzag SiC Nanoribbons: A First-Principles Study (S4-61)
J.A.Sharifi; R.Sun; J.Nakamura
Poster presentation, English, 31st International Colloquium on Scanning Probe Microscopy (ICSPM31), International conference
07 Dec. 2023
07 Dec. 2023- 08 Dec. 2023

B-doped fullerene: a high-performance electrocatalyst for the CO reduction reaction (S4-53)
A.F.Ridassepri; Y.Umejima; J.Nakamura
Poster presentation, English, 31st International Colloquium on Scanning Probe Microscopy (ICSPM31), Peer-reviewed
07 Dec. 2023
07 Dec. 2023- 08 Dec. 2023

Visualization of the Local Dipole Moment at the Si(111)-(2x2) Surface Using DFT Calculations
A. Sumiyoshi; K. Yamasue; Y. Cho; J. Nakamura
Oral presentation, English, AVS 69th International Symposium & Exibition (AVS69), American Vacuum Society, Peer-reviewed, United States, International conference
05 Nov. 2023
05 Nov. 2023- 10 Nov. 2023

第一原理計算を用いたSi(111)-(2x2)表面における表面双極子の可視化
住吉晶; 山末耕平; 長康雄; 中村淳
第84回応用物理学会秋季学術講演会
22 Sep. 2023
19 Sep. 2023- 23 Sep. 2023

Hydrogen storage on tin carbide monolayers with transition metal adatoms
L. G. Arellano; J. Rebollo; F. Salazar; A. Trejo; J. Nakamura
Poster presentation, 36th European Conference on Surface Science (ECOSS36), Lodz, Peer-reviewed, Poland, International conference, with international co-author(s)
30 Aug. 2023
28 Aug. 2023- 01 Sep. 2023

Structural stability and electronic states of AA and AB stacked II-V compounds
L. G. Arellano; J. Nakamura
Oral presentation, English, 36th European Conference on Surface Science (ECOSS36), Lodz, Peer-reviewed, Poland, International conference, with international co-author(s)
30 Aug. 2023
28 Aug. 2023- 01 Sep. 2023

Effects of doping and vacancies in the electronic properties of the SiC monolayer: A DFT approach
Lucia Guadalupe; Arellano Sartorius; Ranferi Cancino; Francisco De Santiago; Álvaro Miranda; Jun Nakamura
Oral presentation, English, The 11th Asia Conference on Mechanical and Materials Engineering (ACMME2023), Peer-reviewed
09 Jun. 2023
08 Jun. 2023- 11 Jun. 2023

Structural stability of 2D II-V compounds
Lucia Guadalupe; Arellano Sartorius; Takayuki Suga; Taichi Hazama; Taichi Takashima; Miguel Cruz-Irisson; Jun Nakamura
Oral presentation, English, Pacific Rim Symposium on Surfaces, Coatings & Interfaces (pacsurf2022), American Vacuum Society (AVS), Hawaii, USA, International conference
14 Dec. 2022

Size Dependence of the N-Doped Graphene Nanocluster on the Oxygen Reduction Reaction Activity
Haruyuki Matsuyama; Lucia Guadalupe; Arellano Sartorius; Jun Nakamura
Oral presentation, English, Pacific Rim Symposium on Surfaces, Coatings & Interfaces (pacsurf2022), American Vacuum Society (AVS), Hawaii, USA, International conference
13 Dec. 2022

Effects of substrates on Oxygen Reduction Reaction of Nitrogen-doped Graphene
Taichi Takashima; Jun Nakamura
Oral presentation, English, The 22nd International Vacuum Congress (IVC-22), Sapporo, Japan, International conference
15 Sep. 2022

B-doped Fullerene as A Novel Monoatomic Catalyst Material for CO Reduction Reaction
Arikasuci Fitonna Ridassepri; Yutaro Umejima; Jun Nakamura
Oral presentation, English, The 22nd International Vacuum Congress (IVC-22), Sapporo, Japan, International conference
15 Sep. 2022

Theoretical prediction of novel two-dimensional II-V compounds
Lucia Guadalupe; Arellano Sartorius; Takayuki Suga; Miguel Cruz Irisson; Jun Nakamura
Poster presentation, English, The 22nd International Vacuum Congress (IVC-22), Sapporo, Japan, International conference
14 Sep. 2022

Effects of Spin-Orbit Interaction on Mn Atomic Wire on GaAs(110)
Motoi Hirayama; Jun Nakamura
Poster presentation, English, The 22nd International Vacuum Congress (IVC-22), Sapporo, Japan, International conference
14 Sep. 2022

Thermodynamical Stability of 2D sp2/sp3 N-doped Carbon Materials
Taichi Hazama; Jun Nakamura
Oral presentation, English, The 22nd International Vacuum Congress (IVC-22), Sapporo, Japan, International conference
12 Sep. 2022

First-principles Study on Edge-edge Interactions of Bilayer Zigzag SiC Nanoribbons
Jawahir Ali Sharifi; Sun Rongyao; Jun Nakamura
Oral presentation, English, The 22nd International Vacuum Congress (IVC-22), Sapporo, Japan, International conference
12 Sep. 2022

SnドープSnxSr1-xTiO3の構造相転移メカニズムの第一原理的解析
天野優也; 中村淳; 阿部浩二
Oral presentation, Japanese, 日本物理学会第７７回年次大会, 日本物理学会, オンライン, Domestic conference
16 Mar. 2022

Carbonaceous material derived from bagasse-waste as anode for Li-ion batteries
Arikasuci Fitonna Ridassepri; Fitria Rahmawati; Agung Tri Wijayanta; Jun Nakamura
Oral presentation, English, The 2nd ECTI Workshop on BEC and the 3rd ASEAN-UEC Workshop, UEC and ECTI, online, International conference
10 Dec. 2021

Structural stability of II-V compound ultrathin films
Lucia G. Arellano Sartorius; Takayuki Suga; Miguel Cruz-Irisson; Jun Nakamura
Oral presentation, English, The 9th International Symposium on Surface Science (ISSS-9), online, International conference
30 Nov. 2021

Stacking effect on oxygen reduction reaction of nitrogen-doped graphene
Taichi Takashima; Jun Nakamura
Poster presentation, English, The 9th International Symposium on Surface Science (ISSS-9), online, International conference
30 Nov. 2021

Edge-edge interactions of bilayer zigzag SiC nanoribbons
孫栄耀; 中村淳
Oral presentation, English, 2021年日本表面真空学会学術講演会, 日本表面真空学会, オンライン, Domestic conference
04 Nov. 2021

コバルトフタロシアニン分子の一酸化炭素還元触媒能：誘導体化の影響
梅島裕太郎; 中村淳
Oral presentation, Japanese, 2021年日本表面真空学会学術講演会, 日本表面真空学会, オンライン, Domestic conference
03 Nov. 2021

Derivatization Effect of Cobalt Phthalocyanine on the Catalytic Activity for Carbon Monoxide Reduction
Y. Umejima; J.Nakamura
Oral presentation, English, AVS 67th International Symposium & Exhibition, American Vacuum Society, online, International conference
25 Oct. 2021

Theoretical study of li-decorated b-doped silicon carbide monolayer for hydrogen storage
Lucia G. Arellano Sartorius; Miguel Cruz-Irisson; Jun Nakamura
Poster presentation, English, 12th International Conference on Hydrogen Production (ICH2P-2021), online, International conference
19 Sep. 2021

Structural stability of 2D II-V compounds
L.Arellano; T.Suga; M.Cruz-Irisson; Jun Nakamura
Oral presentation, English, 第８２回応用物理学会秋季学術講演会, 応用物理学会, オンライン, Domestic conference
13 Sep. 2021

Interaction between the edge states of bilayer zigzag SiC nanoribbons
Rongyao Sun; Jun Nakamura
Oral presentation, English, 第８２回応用物理学会秋季学術講演会, 応用物理学会, オンライン, Domestic conference
12 Sep. 2021

コバルトフタロシアニンの誘導体化が一酸化炭素還元触媒能に及ぼす影響
梅島裕太郎; 中村淳
Oral presentation, Japanese, 第８２回応用物理学会秋季学術講演会, 応用物理学会, オンライン, Domestic conference
12 Sep. 2021

有限電場下の第一原理計算による局所誘電率評価の試み
中村淳
Public discourse, Japanese, 東北大学電気通信研究所講演会, Invited, Domestic conference
15 Jul. 2021

Hydrogen Storage on Metal Decorated GeC Monolayer
L.G. Arellano; A. Miranda; M. Cruz-Irisson; J. Nakamura
Poster presentation, English, Virtual Irago Conference 2020, Chofu, International conference
11 Dec. 2020

2D II-V compounds: A mechanism of structural stabilization
T.Suga; J. Nakamura
Poster presentation, English, Virtual Irago Conference 2020, Chofu, International conference
11 Dec. 2020

Derivatization effect of Metal Phthalocyanine on the catalytic activity for carbon monoxide reduction
Y.Umejima; J. Nakamura
Poster presentation, English, Virtual Irago Conference 2020, Chofu, International conference
11 Dec. 2020

Oxygen Reduction Reaction Activity of Nitrogen-Doped Graphene with a Stone-Wales Defect
X.Lu; J. Nakamura
Poster presentation, English, Virtual Irago Conference 2020, Chofu, International conference
11 Dec. 2020

Stacking effect of double-layered zigzag graphene nanoribbons
R.Sun; J. Nakamura
Poster presentation, English, Virtual Irago Conference 2020, Chofu, International conference
11 Dec. 2020

窒素ドープグラフェンナノクラスターの酸素還元反応における触媒性 : 最適なクラスターサイズの提案
松山治薫; 中村淳
Oral presentation, Japanese, 第６７回応用物理学会春季学術講演会, 応用物理学会, 東京（上智大学）, Domestic conference
17 Mar. 2020

SnxSr1-xTiO3の相転移と局所構造
田中広敏; 小貝侑弘; 中村淳; 阿部浩二; 中野諭人
Poster presentation, Japanese, 日本物理学会第７５回年次大会, 日本物理学会, Domestic conference
17 Mar. 2020

Oxygen reduction reaction for Fe phthalocyanine derivative
H.Matsuyama; H.Abe; K.Ito; H.Yabu; J.Nakamura
Poster presentation, English, Irago Conference 2019, The University of Electro-Communications, Tokyo, Japan, International conference
28 Oct. 2019

Edge-edge interaction in bilayer zigzag graphene nanoribbons
T.Asano; J.Nakamura
Poster presentation, English, Irago Conference 2019, The University of Electro-Communications, Tokyo, Japan, International conference
28 Oct. 2019

Structural stability of twisted bilayer graphene nano ribbons
S.Chiba; J.Nakamura
Poster presentation, English, Irago Conference 2019, The University of Electro-Communications, Tokyo, Japan, International conference
28 Oct. 2019

Chalcogen passivation of GaAs(111)B surfaces
T.Suga; S.Goto; A.Ohtake; J.Nakamura
Poster presentation, English, Irago Conference 2019, The University of Electro-Communications, Tokyo, Japan, International conference
28 Oct. 2019

Mechanism of chalcogen passivation of GaAs surfaces
T. Suga; S. Goto; A. Ohtake; J. Nakamura
Oral presentation, English, AVS 66th International Symposium & Exhibition, AVS (American Vacuum Society), Columbus, USA, International conference
22 Oct. 2019

Structural stability of graphene nanoflakes: From the view point of aromaticity
M. Ushirozako; H. Matsuyama; A. Akaishi; J. Nakamura
Oral presentation, English, AVS 66th International Symposium & Exhibition, AVS (American Vacuum Society), Columbus, USA, International conference
21 Oct. 2019

Structural stability of graphene nanoflakes: from the view point of aromaticity
Jun Nakamura
Keynote oral presentation, English, Sociedad Mexicana de Física, LXII Congreso Nacional de Física, Invited, Sociedad Mexicana de Física, Tabasco, Mexico, International conference
11 Oct. 2019

鉄フタロシアニンの誘導体化による酸素還元反応の高活性化メカニズム
松山治薫; 阿部博弥; 伊藤晃寿; 藪浩; 中村淳
Oral presentation, Japanese, 第８０回応用物理学会秋季学術講演会, 応用物理学会, 札幌, Domestic conference
17 Sep. 2019

Edge-state-induced stacking of zigzag graphene nano-ribbons
T.Asano; J.Nakamura
Oral presentation, English, The 17th International Conference on the Formation of Semiconductor Interfaces (ICFSI-17), Shanghai Jiao Tong University, Shanghai, China, International conference
25 Jun. 2019

Bi-layer formation of water on graphene
A.Akaishi; T.Yonemaru; J.Nakamura
Oral presentation, English, The 17th International Conference on the Formation of Semiconductor Interfaces (ICFSI-17), Shanghai Jiao Tong University, Shanghai, China, International conference
24 Jun. 2019

Functionalization of graphene by N doping: Application to the oxygen reduction reaction
H.Matsuyama; J.Nakamura
Oral presentation, English, The 17th International Conference on the Formation of Semiconductor Interfaces (ICFSI-17), Shanghai Jiao Tong University, Shanghai, China, International conference
24 Jun. 2019

Chalcogen passivation of GaAs(111)B surfaces
T.Suga; S.Goto; A.Ohtake; J.Nakamura
Poster presentation, English, Compound Semiconductor Week 2019, Compound Semiconductor Week, Nara, Japan, https://www.csw-jpn.org, International conference
20 May 2019

Water wettability of graphene
Jun Nakamura
Keynote oral presentation, English, Sociedad Mexicana de Física Reunión Anual de la División de Estado Sólido 2019, Invited, Sociedad Mexicana de Física, Papantla, Veracruz, Mexico, International conference
02 May 2019

Actividad catalítica del grafeno dopado con boro para reacciones de reducción de oxígeno
Lucia Guadalupe; Arellano Sartorius; Jun Nakamura
Poster presentation, Spanish, Castilian, Sociedad Mexicana de Física Reunión Anual de la División de Estado Sólido 2019, Sociedad Mexicana de Física, Papantla, Veracruz, Mexico, International conference
02 May 2019

窒素ドープグラフェンナノリボンにおける酸素還元反応
松山治薫; 五味駿一; 中村淳
Oral presentation, Japanese, 第６６回応用物理学会春季学術講演会, 応用物理学会, 東工大大岡山キャンパス, Domestic conference
09 Mar. 2019

Oxygen Reduction Reaction on Fullerene
菊地庸介; 中村淳
Poster presentation, Japanese, 東京理科大学ナノカーボン研究部⾨2018年度成果報告会&第4回東京理科大学-電気通信大学合同研究会, 東京理科大学、電気通信大学, 東京理科大学神楽坂キャンパス, Domestic conference
01 Mar. 2019

Structural stability of the Se- or S-treated GaAs (111) B surface
後藤俊治; 中村淳
Poster presentation, Japanese, 東京理科大学ナノカーボン研究部⾨2018年度成果報告会&第4回東京理科大学-電気通信大学合同研究会, 東京理科大学、電気通信大学, 東京理科大学神楽坂キャンパス, Domestic conference
01 Mar. 2019

GaAs(111)B表面構造の分子分圧依存性
須賀隆之; 後藤俊治; 中村淳
Poster presentation, Japanese, 東京理科大学ナノカーボン研究部⾨2018年度成果報告会&第4回東京理科大学-電気通信大学合同研究会, 東京理科大学、電気通信大学, 東京理科大学神楽坂キャンパス, Domestic conference
01 Mar. 2019

カルコゲンによるGaAs表面の不働態化機構
中村淳
Poster presentation, Japanese, 東京理科大学ナノカーボン研究部⾨2018年度成果報告会&第4回東京理科大学-電気通信大学合同研究会, 東京理科大学、電気通信大学, 東京理科大学神楽坂キャンパス, Domestic conference
01 Mar. 2019

Oxygen Reduction Reaction Mechanism for N-doped Graphene Nanoribbons
H. Matsuyama; S. Gomi; J.Nakamura
Poster presentation, English, Pacific Rim Symposium on Surfaces, Coatings & Interfaces (pacsurf2018), American Vacuum Society, Hawaii, USA, International conference
05 Dec. 2018

グラフェンは疎水性か？
中村淳
Keynote oral presentation, Japanese, 第３２回ダイヤモンドシンポジウム, Invited, ダイヤモンドフォーラム, 調布, Domestic conference
15 Nov. 2018

窒素ドープグラフェンナノクラスターの酸素還元反応に対する触媒性
松山治薫; 中村淳
Oral presentation, Japanese, 第３２回ダイヤモンドシンポジウム, ダイヤモンドフォーラム, 調布, Domestic conference
15 Nov. 2018

グラフェンは疎水性か？
中村淳
Public discourse, Japanese, 千葉大学物性セミナー, Invited, 千葉大学, 千葉, Domestic conference
08 Nov. 2018

Oxygen reduction reaction activity for N-doped graphene nanoclusters
H. Matsuyama; J. Nakamura
Poster presentation, English, The Irago Conference 2018, The University of Electro-Communications (UEC-Tokyo), Shinjuku, Tokyo, International conference
01 Nov. 2018

Structural stability of the Se- or S-treated GaAs (111) B surface
S. Chiba; J. Nakamura
Poster presentation, English, The Irago Conference 2018, The University of Electro-Communications (UEC-Tokyo), Shinjuku, Tokyo, International conference
01 Nov. 2018

Systematic evaluation of the structural stability of nitrogen-doped graphene
S. Goto; A. Ohtake; J. Nakamura
Poster presentation, English, The Irago Conference 2018, The University of Electro-Communications (UEC-Tokyo), Shinjuku, Tokyo, International conference
01 Nov. 2018

Oxygen Reduction Reaction on fullerene
Y. Kikuchi; J. Nakamura
Poster presentation, English, The Irago Conference 2018, The University of Electro-Communications (UEC-Tokyo), Shinjuku, Tokyo, International conference
01 Nov. 2018

Na- and Be-decorated silicon carbide monolayer for H2 storage: a DFT study
L. G. Arellano; F. de Santiago; A. Miranda; M. Cruz-Irisson; J. Nakamura
Poster presentation, English, The Irago Conference 2018, The University of Electro-Communications (UEC-Tokyo), Shinjuku, Tokyo, International conference
01 Nov. 2018

Edge-state-induced stacking of zigzag graphene nano-ribbons
T. Asano; J. Nakamura
Poster presentation, English, The Irago Conference 2018, The University of Electro-Communications (UEC-Tokyo), Shinjuku, Tokyo, International conference
01 Nov. 2018

Double Layer Formation of Water Molecules on Graphene
A. Akaishi; T. Yonemaru; J. Nakamura
Oral presentation, English, American Vacuum Society 65th International Symposium & Exhibition (AVS-65), American Vacuum Society, Long Beach, USA, International conference
24 Oct. 2018

Stabilization Mechanism of the Se- or S-treated GaAs(111)B Surface
S. Goto; A. Ohtake; J. Nakamura
Oral presentation, English, American Vacuum Society 65th International Symposium & Exhibition (AVS-65), American Vacuum Society, Long Beach, USA, International conference
24 Oct. 2018

Oxygen Reduction Reaction on Fullerene
Y. Kikuchi; J. Nakamura
Oral presentation, English, American Vacuum Society 65th International Symposium & Exhibition (AVS-65), American Vacuum Society, Long Beach, USA, International conference
23 Oct. 2018

窒素ドープグラフェンのベーサル面における酸素還元反応
松山治薫; 中村淳
Oral presentation, Japanese, 第７９回応用物理学会秋季学術講演会, 応用物理学会, 名古屋国際会議場, Domestic conference
21 Sep. 2018

窒素ドープグラフェンの構造安定性の系統的評価
千葉紗彩; 中村淳
Oral presentation, Japanese, 第７９回応用物理学会秋季学術講演会, 応用物理学会, 名古屋国際会議場, Domestic conference
21 Sep. 2018

２層ジグザググラフェンナノリボンのエッジ状態間相互作用
浅野大造; 中村淳
Oral presentation, Japanese, 第７９回応用物理学会秋季学術講演会, 応用物理学会, 名古屋国際会議場, Domestic conference
21 Sep. 2018

酸素還元反応におけるフラーレンの触媒性
菊地庸介; 中村淳
Oral presentation, Japanese, 第７９回応用物理学会秋季学術講演会, 応用物理学会, 名古屋国際会議場, Domestic conference
19 Sep. 2018

S処理された GaAs(111)B 表面の構造安定性
後藤俊治; 大竹晃浩; 中村淳
Oral presentation, Japanese, 第７９回応用物理学会秋季学術講演会, 応用物理学会, 名古屋国際会議場, Domestic conference
18 Sep. 2018

Formation of Water Layer on Graphene Surfaces
Jun Nakamura
Invited oral presentation, English, International Symposium of Water Frontier Science & Technology Research Center, Water on Materials Surface 2018 (WMS2018), Invited, Tokyo University of Science, Tokyo, Japan, https://w-fst.tus.ac.jp/wms2018, International conference
27 Jul. 2018

Water layer formation on graphene
Jun Nakamura
Invited oral presentation, English, The 6th International Workshop on Solution Plasma and Molecdular Technology (SPM6), Invited, SPM Organizing Committee, Gdansk, Poland, International conference
05 Jun. 2018

Edge-state-induced stacking of zigzag graphene nano-ribbons
T. Asano; J. Nakamura
Oral presentation, English, The 6th International Workshop on Solution Plasma and Molecdular Technology (SPM6), SPM Organizing Committee, Gdansk, Poland, International conference
05 Jun. 2018

Systematic evaluation of the structural stability of N-doped graphene
S. Chiba; J. Nakamura
Oral presentation, English, The 6th International Workshop on Solution Plasma and Molecdular Technology (SPM6), SPM Organizing Committee, Gdansk, Poland, International conference
05 Jun. 2018

Intra- and inter-layer magnetic interactions in a van der Waals crystal
M. Kawashima; A. Akaishi; J. Nakamura
Oral presentation, English, The 6th International Workshop on Solution Plasma and Molecdular Technology (SPM6), SPM Organizing Committee, Gdansk, Poland, International conference
05 Jun. 2018

Se 処理された GaAs(111)B 表面の構造安定性
後藤俊治; 大竹晃浩; 赤石暁; 中村淳
Oral presentation, Japanese, 第６５回応用物理学会春季学術講演会, 応用物理学会, 新宿（早稲田大学）, Domestic conference
17 Mar. 2018

Intra- and inter-layer magnetic interactions in a van der Waals crystal
M. Kawashima; A. Akaishi; J. Nakamura
Poster presentation, English, 2018 DPG Joint meeting of the DPG and EPS Condesed Matter Divisions, DPG and EPS Condesed Matter Divisions, Berlin, Germany, International conference
13 Mar. 2018

LiMO2(M=Mn,Co,Ni)の熱力学的安定性および磁気的特性の第一原理計算による評価
宮本惇; 中村淳
Poster presentation, Japanese, 電気通信大学ナノトライボロジー研究センター第２回シンポジウム「物性科学から工学へ」, 電気通信大学ナノトライボロジー研究センター, 調布, Domestic conference
07 Mar. 2018

Structural stability of the Se-treated GaAs(111)B surface
後藤俊治; 中村淳
Poster presentation, Japanese, 電気通信大学ナノトライボロジー研究センター第２回シンポジウム「物性科学から工学へ」, 電気通信大学ナノトライボロジー研究センター, 調布, Domestic conference
07 Mar. 2018

窒素ドープグラフェン上の酸素還元反応の窒素配位依存性
松山治薫; 赤石暁; 中村淳
Poster presentation, Japanese, 電気通信大学ナノトライボロジー研究センター第２回シンポジウム「物性科学から工学へ」, 電気通信大学ナノトライボロジー研究センター, 調布, Domestic conference
07 Mar. 2018

窒素ドープグラフェンの構造安定性に局所的窒素配列が及ぼす影響
千葉紗彩; 赤石暁; 中村淳
Poster presentation, Japanese, 電気通信大学ナノトライボロジー研究センター第２回シンポジウム「物性科学から工学へ」, 電気通信大学ナノトライボロジー研究センター, 調布, Domestic conference
07 Mar. 2018

InGaN混晶中におけるIn-In相互作用
畑木尚; 中村淳
Poster presentation, Japanese, 電気通信大学ナノトライボロジー研究センター第２回シンポジウム「物性科学から工学へ」, 電気通信大学ナノトライボロジー研究センター, 調布, Domestic conference
07 Mar. 2018

Effect s of Edge Structures on the Oxygen Reduction Reaction Activity of Nitrogen-doped Graphene Nanoribbons
S. Gomi; H. Matsuyama; A. Akaishi; J. Nakamura
Oral presentation, English, 45th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-45), American Vacuum Society, Kailua-Kona, USA, International conference
16 Jan. 2018

Quantitative Relation between the Structural Stability and the Aromaticity of Graphene Nanoflakes
M.Ushirozako; H. Matsuyama; A. Akaishi; J. Nakamura
Oral presentation, English, 45th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-45), American Vacuum Society, Kailua-Kona, USA, International conference
16 Jan. 2018

Formation of Water Bilayer on Graphene Surfaces
A. Akaishi; J. Nakamura
Oral presentation, English, 45th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-45), American Vacuum Society, Kailua-Kona, USA, International conference
16 Jan. 2018

Structural stability of the Se-treated GaAs(111)B surface
S. Goto; A. Ohtake; A. Akaishi; J. Nakamura
Oral presentation, English, The Irago Conference 2017, The University of Electro-Communications (UEC-Tokyo), Chofu, Tokyo, International conference
01 Nov. 2017

Softly-confined water cluster between free standing graphene sheets
R. Agustian; A. Akaishi; J. Nakamura
Oral presentation, English, The Irago Conference 2017, The University of Electro-Communications (UEC-Tokyo), Chofu, Tokyo, International conference
01 Nov. 2017

Relationship between Stability and Aromaticity of Graphene Nanoflakes
A. Akaishi; M. Ushirozako; H. Matsuyama; J. Nakamura
Poster presentation, English, The Irago Conference 2017, The University of Electro-Communications (UEC-Tokyo), Chofu, Tokyo, International conference
01 Nov. 2017

Effect of edge structures on the oxygen reduction reaction activity of nitrogen-doped graphene nanoribbons
S. Gomi; H. Matsuyama; A. Akaishi; J. Nakamura
Poster presentation, English, The Irago Conference 2017, The University of Electro-Communications (UEC-Tokyo), Chofu, Tokyo, International conference
01 Nov. 2017

Oxygen Reduction Reaction on N-doped Graphene Nanoclusters: Dependence on Nitrogen Configuration
H. Matsuyama; A. Akaishi; J. Nakamura
Poster presentation, English, International Symposium on Novel Energy Nanomaterials, Catalysts and Surfaces for Future Earth (NENCS), The University of Electro-Communications (UEC-Tokyo), Chofu, Tokyo, International conference
29 Oct. 2017

Anomalous Enhancement of Seebeck Coefficients fo the Graphene/h-BN Composites
J. Nakamura; A. Akaishi
Oral presentation, English, International Symposium on Novel Energy Nanomaterials, Catalysts and Surfaces for Future Earth (NENCS), The University of Electro-Communications (UEC-Tokyo), Chofu, Tokyo, International conference
28 Oct. 2017

Reaction Selectivity for Oxygen Reduction of N-Doped Graphene Nanoclusters
H. Matsuyama; A. Akaishi; J. Nakamura
Oral presentation, English, 232nd ECS Meeting, The Electrochemical Society, National Harbor, MD, USA, International conference
01 Oct. 2017

窒素ドープグラフェンナノリボンの酸素還元触媒能に及ぼすエッジの効果
五味駿一; 中村淳
Poster presentation, Japanese, 電気通信大学ナノトライボロジー研究センター第１回シンポジウム「表面界面の科学と摩擦」, 電気通信大学ナノトライボロジー研究センター, 調布, Domestic conference
30 Sep. 2017

グラフェン層間に拘束された水分子クラスターの動的構造評価
Rifan Agustian; 中村淳
Poster presentation, Japanese, 電気通信大学ナノトライボロジー研究センター第１回シンポジウム「表面界面の科学と摩擦」, 電気通信大学ナノトライボロジー研究センター, 調布, Domestic conference
30 Sep. 2017

Se処理したGaAs(111)B表面の構造安定性
後藤俊治; 中村淳
Poster presentation, Japanese, 電気通信大学ナノトライボロジー研究センター第１回シンポジウム「表面界面の科学と摩擦」, 電気通信大学ナノトライボロジー研究センター, 調布, Domestic conference
30 Sep. 2017

グラフェン界面の水のダイナミクス
赤石暁; 中村淳
Invited oral presentation, Japanese, 電気通信大学ナノトライボロジー研究センター第１回シンポジウム「表面界面の科学と摩擦」, Invited, 電気通信大学ナノトライボロジー研究センター, 調布, Domestic conference
30 Sep. 2017

グラフェンナノフレークの構造安定性と芳香族性
赤石暁; 後迫真人; 松山治薫; 中村淳
Oral presentation, Japanese, 第７８回応用物理学会秋季学術講演会, 応用物理学会, 福岡, Domestic conference
07 Sep. 2017

Two- to Three-dimensional Transition of Confined Water between Freestanding Graphene Sheets
Rifan Agustian; Akira Akaishi; Jun Nakamura
Oral presentation, English, 第７８回応用物理学会秋季学術講演会, 応用物理学会, 福岡, Domestic conference
07 Sep. 2017

酸素還元反応における窒素ドープグラフェンナノクラスターの触媒性：窒素配位依存性
松山治薫; 赤石暁; 中村淳
Oral presentation, Japanese, 第７８回応用物理学会秋季学術講演会, 応用物理学会, 福岡, Domestic conference
07 Sep. 2017

Se処理GaAs(111)B表面の安定化機構
大竹晃浩; 後藤俊治; 中村淳
Oral presentation, Japanese, 第７８回応用物理学会秋季学術講演会, 応用物理学会, 福岡, Domestic conference
05 Sep. 2017

Structural Stability of Graphene Nanoflakes: from the View Point of Aromaticity
J. Nakamura; M. Ushirozako; H. Matsuyama; A. Akaishi
Invited oral presentation, English, The 5th International Workshop on Solution Plasma and Molecdular Technology (SPM5), Invited, Leibnitz Institute for Plasma Science and Technologis, Greifswald, Germany, International conference
29 Jun. 2017

Two- to Three-Dimentional Transition of Softly Confined Water Between Graphene Sheets
R. Agustian; A. Akaishi; J. Nakamura
Oral presentation, English, The 5th International Workshop on Solution Plasma and Molecdular Technology (SPM5), Leipnitz Institute for Plasma Science and Technology, Greifswald, Germany, International conference
27 Jun. 2017

二軸性歪み下におけるGaSbの電気伝導率の面方位依存性
岸本秀輝; 赤石暁; 中村淳
Oral presentation, Japanese, 第６４回応用物理学会春季学術講演会, 応用物理学会, パシフィコ横浜, Domestic conference
17 Mar. 2017

グラフェン表面における水の吸着と構造化
赤石暁; 中村淳
Invited oral presentation, Japanese, 日本化学会第９７春季年会, Invited, 日本化学会, 慶応大日吉, Domestic conference
16 Mar. 2017

グラフェン上の水２重層構造
赤石暁; 中村淳
Poster presentation, Japanese, ナノトライボロジー研究センター開設シンポジウム, 電気通信大学ナノトライボロジー研究センター, 電気通信大学, Domestic conference
08 Mar. 2017

窒素ドープグラフェンナノクラスター上における酸素還元反応の窒素原子位置依存性
松山治薫; 赤石暁; 中村淳
Poster presentation, Japanese, ナノトライボロジー研究センター開設シンポジウム, 電気通信大学ナノトライボロジー研究センター, 電気通信大学, Domestic conference
08 Mar. 2017

窒素ドープカイラルエッジグラフェンナノリボンの構造安定性
菊地庸介; 赤石暁; 中村淳
Poster presentation, Japanese, ナノトライボロジー研究センター開設シンポジウム, 電気通信大学ナノトライボロジー研究センター, 電気通信大学, Domestic conference
08 Mar. 2017

Se吸着GaAs(111)B表面の構造安定性
後藤俊治; 赤石暁; 中村淳
Poster presentation, Japanese, ナノトライボロジー研究センター開設シンポジウム, 電気通信大学ナノトライボロジー研究センター, 電気通信大学, Domestic conference
08 Mar. 2017

曲率を有するグラフェン表面における水ナノクラスターの吸着特性
玉村優佳; 赤石暁; 中村淳
Poster presentation, Japanese, ナノトライボロジー研究センター開設シンポジウム, 電気通信大学ナノトライボロジー研究センター, 電気通信大学, Domestic conference
08 Mar. 2017

Mechanism of Stabilization and Magnetization of Impurity-doped Zigzag Graphene Naoribbons
Y. Uchida; S.-I. Gomi; H. Matsuyama; A. Akaishi; J. Nakamura
Oral presentation, English, 44th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-44), American Vacuum Society, Santa Fe, USA, International conference
16 Jan. 2017

Site-dependent Oxygen Reduction Reaction of N-doped Graphene Nanoclusters
H. Matsuyama; S.-I. Gomi; M. Ushirozako; A. Akaishi; J. Nakamura
Oral presentation, English, 44th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-44), American Vacuum Society, Santa Fe, USA, International conference
16 Jan. 2017

窒素ドープグラフェンナノリボンの酸素還元反応における触媒性
五味駿一; 松山治薫; 赤石暁; 中村淳
Oral presentation, Japanese, ２０１６年真空・表面科学合同講演会, 日本真空協会、日本表面科学会, 名古屋, Domestic conference
29 Nov. 2016

酸素還元反応における窒素ドープグラフェンナノクラスターの触媒性
松山治薫; 田中崇太郎; 赤石暁; 中村淳
Oral presentation, Japanese, ２０１６年真空・表面科学合同講演会, 日本真空協会、日本表面科学会, 名古屋, Domestic conference
29 Nov. 2016

グラフェンナノリボンの物性
中村淳
Invited oral presentation, Japanese, 日本磁気学会 第６２回磁気工学専門研究会, Invited, 日本磁気学会, 田町, Domestic conference
18 Nov. 2016

Electrical conductivity of the biaxally-strained GaSb
H. Kishimoto; T. Hatayama; A. Akaishi; J. Nakamura
Poster presentation, English, The Irago Conference 2016, International conference
01 Nov. 2016

Oxygen reduction reaction on nitrogen-doped graphene nanoclusters
H. Matsuyama; S. Tanaka; A. Akaishi; J. Nakamura
Poster presentation, English, The Irago Conference 2016, International conference
01 Nov. 2016

Oxygen reduction reaction on nitrogen-doped graphene nanoribbons
S.-I. Gomi; H. Matsuyama; A. Akaishi; J. Nakamura
Poster presentation, English, The Irago Conference 2016, International conference
01 Nov. 2016

Formation of water layers on graphene surfaces
A. Akaishi; J. Nakamura
Poster presentation, English, The Irago Conference 2016, International conference
01 Nov. 2016

Structural stability of graphene nanoflakes
M. Ushirozako; A. Akaishi; J. Nakamura
Poster presentation, English, The Irago Conference 2016, International conference
01 Nov. 2016

Electrical conductivity of the biaxially-strained GaSb(111) and GaSb(001)
H. Kishimoto; T. Hatayama; A. Akaishi; J.Nakamura
Poster presentation, English, 13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN 2016), Rome, Italy, International conference
12 Oct. 2016

Structural stability of graphene nanoflakes
M.Ushirozako; A. Akaishi; J.Nakamura
Poster presentation, English, 13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN 2016), Rome, Italy, International conference
12 Oct. 2016

Interfacial water layer on doped graphene surfaces
A. Akaishi; J.Nakamura
Oral presentation, English, 13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN 2016), Rome, Italy, International conference
12 Oct. 2016

GaSbの電気伝導率の二軸性歪み依存性
岸本秀輝; 畑山拓也; 赤石暁; 中村淳
Oral presentation, Japanese, 第７７回応用物理学会秋季学術講演会, 応用物理学会, 新潟, Domestic conference
16 Sep. 2016

窒素ドープグラフェンナノクラスター上の酸素還元反応
松山治薫; 田中崇太郎; 赤石暁; 中村淳
Oral presentation, Japanese, 第７７回応用物理学会秋季学術講演会, 応用物理学会, 新潟, Domestic conference
15 Sep. 2016

Electrical conductivity of the biaxially-strained GaSb(111) films
T. Hatayama; H. Kishimoto; A. Akaishi; J.Nakamura
Poster presentation, English, The 43rd International Symposium on Compound Semiconductors (ISCS 2016), CSW2016, Toyama, Japan, International conference
27 Jun. 2016

Water adsorption on doped graphene surfaces
A. Akaishi; J.Nakamura
Oral presentation, English, 4th International Workshop on Solution Plasma and Molecular Technologies (SPM-4), SPM Organizing Committee, Pilsen, Czech Republic, International conference
09 Jun. 2016

Mechanism of Stabilization and Magnetization of Impurity-doped Zigzag Graphene Nanoribbons
J.Nakamura; Y.Uchida; S.Gomi; H.Matsuyama; A.Akaishi
Invited oral presentation, English, 4th International Workshop on Solution Plasma and Molecular Technologies (SPM-4), Invited, SPM Organizing Committee, Pilsen, Czech Republic, International conference
09 Jun. 2016

Effects of edge structures on oxygen reduction reaction for nitrogen-doped graphene nanoclusters
H.Matsuyama; S.Tanaka; A.Akaishi; J.Nakamura
Oral presentation, English, 4th International Workshop on Solution Plasma and Molecular Technologies (SPM-4), SPM Organizing Committee, Pilsen, Czech Republic, International conference
08 Jun. 2016

Anomalous enhancement of Seebeck coefficients for the graphene/h-BN composites
Jun Nakamura; Yushi Yokomizo
Invited oral presentation, English, EMN Meeting on Carbon Nanostructures, Invited, EMN, Honolulu, Hawaii (USA), International conference
29 Mar. 2016

グラフェンの大気由来吸着物
日比野浩樹; 小川友以; 高村真琴; Wang Shengnan; 関根佳明; 赤石暁; 中村淳
Oral presentation, Japanese, 第６３回応用物理学会春季学術講演会, 応用物理学会, 大岡山, Domestic conference
22 Mar. 2016

グラフェン表面における水の吸着と構造
赤石暁; 中村淳
Invited oral presentation, Japanese, 合同若手研究会 -表面・界面現象の新展開：吸着・物質移動・エネルギー散逸-, Invited, 東京理科大学、電気通信大学, 東京理科大学, Domestic conference
14 Mar. 2016

Mn吸着GaAs(001)-(2x2)表面の局所無秩序構造
船附顕汰; 赤石暁; 中村淳
Poster presentation, Japanese, 合同若手研究会 -表面・界面現象の新展開：吸着・物質移動・エネルギー散逸-, 東京理科大学、電気通信大学, 東京理科大学, Domestic conference
14 Mar. 2016

GaSb(111)薄膜の電気伝導率の歪み依存性
岸本秀輝; 畑山拓也; 赤石暁; 中村淳
Poster presentation, Japanese, 合同若手研究会 -表面・界面現象の新展開：吸着・物質移動・エネルギー散逸-, 東京理科大学、電気通信大学, 東京理科大学, Domestic conference
14 Mar. 2016

窒素ドープグラフェン上における酸素還元反応
松山治薫; 田中崇太郎; 赤石暁; 中村淳
Poster presentation, Japanese, 合同若手研究会 -表面・界面現象の新展開：吸着・物質移動・エネルギー散逸-, 東京理科大学、電気通信大学, 東京理科大学, Domestic conference
14 Mar. 2016

グラフェン表面の水の二重層構造
赤石暁; 中村淳
Oral presentation, Japanese, 第２５回日本ＭＲＳ年次大会, 日本ＭＲＳ, 横浜, Domestic conference
08 Dec. 2015

不純物ドープグラフェンナノリボンの安定化機構
内田優希; 赤石暁; 中村淳
Oral presentation, Japanese, 第２５回日本ＭＲＳ年次大会, 日本ＭＲＳ, 横浜, Domestic conference
08 Dec. 2015

窒素ドープグラフェン上の酸素還元触媒の第一原理計算
松山治薫; 市川諒英; 赤石暁; 中村淳
Poster presentation, Japanese, 第２５回日本ＭＲＳ年次大会, 日本ＭＲＳ, 横浜, Domestic conference
08 Dec. 2015

グラフェンナノフレークの構造安定性
後迫真人; 赤石暁; 中村淳
Poster presentation, Japanese, 第２５回日本ＭＲＳ年次大会, 日本ＭＲＳ, 横浜, Domestic conference
08 Dec. 2015

グラフェンおよびグラフェンナノリボンのバリスティックフォノン熱伝導
中村淳
Invited oral presentation, Japanese, 第３５回表面科学学術講演会, Invited, 日本表面科学会, つくば, Domestic conference
01 Dec. 2015

窒素ドープグラフェン表面における酸素還元反応：窒素濃度依存性
松山治薫; 市川諒英; 赤石暁; 中村淳
Poster presentation, Japanese, 第３５回表面科学学術講演会, 日本表面科学会, つくば, Domestic conference
01 Dec. 2015

グラフェン表面における水分子層の構造化
赤石暁; 中村淳
Oral presentation, Japanese, 第３５回表面科学学術講演会, 日本表面科学会, つくば, Domestic conference
01 Dec. 2015

グラフェンのエッジ状態がもたらす不純物の安定化機構
内田優希; 赤石暁; 中村淳
Oral presentation, Japanese, 第３５回表面科学学術講演会, 日本表面科学会, つくば, Domestic conference
01 Dec. 2015

First-principles Evaluation of The Oxygen Reduction Reaction on Nitrogen-doped Graphene
J.Nakamura; A.Ichikawa; H.Matsuyama; A.Akaishi
Invited oral presentation, English, 2015 EMN Bangkok Meeting, Invited, University of Electronic Science and Technology of China, Bangkok, Thailand, International conference
10 Nov. 2015

Layered Water on Graphene Surfaces
A.Akaishi; J.Nakamura
Invited oral presentation, English, 2015 EMN Bangkok Meeting, Invited, University of Electronic Science and Technology of China, Bangkok, Thailand, International conference
10 Nov. 2015

Oxygen reduction reaction on the basal plane of nitrogen-doped graphene: Effects of local arrangement of dopants
H.Matsuyama; A.Ichikawa; A.Akaishi; J.Nakamura
Oral presentation, English, The Irago Conference 2015, TUT and UEC, Tahara, Japan, International conference
23 Oct. 2015

Conformational stabilization of graphene nanoflakes
M.Ushirozako; A.Akaishi; J.Nakamura
Poster presentation, English, The Irago Conference 2015, TUT and UEC, Tahara, Japan, International conference
23 Oct. 2015

First-principles study on locally-disordered structures of the Mn-induced GaAs(001)-(2 x 2) surface
K.Funatsuki; A.Akaishi; J.Nakamura
Poster presentation, English, The Irago Conference 2015, TUT and UEC, Tahara, Japan, International conference
23 Oct. 2015

Strain effect on the hole effective mass of GaSb: A first-priciples study
H.Kishimoto; T.Hatayama; A.Akaishi; J.Nakamura
Poster presentation, English, The Irago Conference 2015, TUT and UEC, Tahara, Japan, International conference
23 Oct. 2015

Edge-state-induced Stabilization of Dopants in Graphene
Y.Uchida; A.Akaishi; J.Nakamura
Oral presentation, English, American Vacuum Society 62nd International Symposium & Exhibition (AVS-62), American Vacuum Society, San Jose, USA, International conference
21 Oct. 2015

Oxygen Reduction Reaction on Nitrogen-doped Graphene
J.Nakamura; A.Ichikawa; H.Matsuyama; A.Akaishi
Oral presentation, English, American Vacuum Society 62nd International Symposium & Exhibition (AVS-62), American Vacuum Society, San Jose, USA, International conference
21 Oct. 2015

Electronic Structures of the Biaxiallystrained GaSb(111) Films
T.Hatayama; A.Akaishi; J.Nakamura
Oral presentation, English, American Vacuum Society 62nd International Symposium & Exhibition (AVS-62), American Vacuum Society, San Jose, USA, International conference
19 Oct. 2015

男女共同参画委員会活動報告
小川賀代; 近藤高志; 沈青; 中村淳
Poster presentation, Japanese, 第１３回男女共同参画学協会連絡会シンポジウム, 男女共同参画学協会連絡会, 千葉, Domestic conference
17 Oct. 2015

窒素ドープジグザググラフェンナノリボンの磁性
内田優希; 赤石暁; 中村淳
Oral presentation, Japanese, 第７６回応用物理学会秋季学術講演会, 応用物理学会, 名古屋市国際会議場, Domestic conference
15 Sep. 2015

酸素還元反応における窒素ドープグラフェンの触媒性
松山治薫; 市川諒英; 赤石暁; 中村淳
Oral presentation, Japanese, 第７６回応用物理学会秋季学術講演会, 応用物理学会, 名古屋市国際会議場, Domestic conference
15 Sep. 2015

グラフェン表面の水の層構造
赤石暁; 中村淳
Oral presentation, Japanese, 第７６回応用物理学会秋季学術講演会, 応用物理学会, 名古屋市国際会議場, Domestic conference
15 Sep. 2015

GaAs(001)表面上でのMn吸着サイト
大竹晃浩; 萩原敦; 船附顕汰; 中村淳
Oral presentation, Japanese, 第７６回応用物理学会秋季学術講演会, 応用物理学会, 名古屋市国際会議場, Domestic conference
13 Sep. 2015

Oxygen reduction reaction on the basal plane of nitrogen- doped graphene
J.Nakamura; A.Ichikawa; H.Matsuyama; A.Akaishi
Oral presentation, English, 31st European Conference on Surface Science (ECOSS-2015), Barcelona, Spain, International conference
03 Sep. 2015

Wettability of graphene surface
A.Akaishi; J.Nakamura
Poster presentation, English, 31st European Conference on Surface Science (ECOSS-2015), Barcelona, Spain, International conference
01 Sep. 2015

Water layers on graphene surface
A.Akaishi; J.Nakamura
Poster presentation, English, Graphene Week 2015, Graphene Flagship, Manchester, England, International conference
24 Jun. 2015

Oxygen reduction reaction on the basal plane of nitrogen-doped graphene
J.Nakamura; A.Ichikawa; H.Matsuyama; A.Akaishi
Poster presentation, English, Graphene Week 2015, Graphene Flagship, Manchester, England, International conference
24 Jun. 2015

Double-layer structure of water molecules on the graphene surface
A.Akaishi; J.Nakamura
Oral presentation, English, 3rd International Workshop on Solution Plasma and Molecular Technologies (SPM-3), The Petroleum and Petrochemical College (PPC), Chulalongkorn University, International conference
08 May 2015

Oxygen reduction reaction on nitrogen-doped graphene
Jun Nakamura
Invited oral presentation, English, 3rd International Workshop on Solution Plasma and Molecular Technologies (SPM-3), Invited, The Petroleum and Petrochemical College(PPC), Chulalongkorn University, Bangkok, Thailand, International conference
07 May 2015

Catalytic reaction of oxygen on nitrogen-doped graphene
H.Matsuyama; A.Ichikawa; A.Akaishi; J.Nakamura
Oral presentation, English, 3rd International Workshop on Solution Plasma and Molecular Technologies (SPM-3), The Petroleum and Petrochemical College (PPC), Chulalongkorn University, Bangkok, Thailand, International conference
06 May 2015

Electrocatalytic Activity for Oxygen Reduction on Nitrogen-Doped Graphene
A.Ichikawa; A.Akaishi; J.Nakamura
Oral presentation, English, 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, (ISPlasma 2015), JSAP and APS, Nagoya, Japan, International conference
30 Mar. 2015

Universal Feature of Seebeck Coefficients in Graphene/h-BN Nano-Composites
Y.Ayako; A.Akaishi; J.Nakamura
Oral presentation, English, 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, (ISPlasma 2015), JSAP and APS, Nagoya, Japan, International conference
30 Mar. 2015

Structural Stability of B-, N-Doped Graphene Nanoribbons
Y.Uchida; A.Akaishi; J.Nakamura
Oral presentation, English, 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, (ISPlasma 2015), JSAP and APS, Nagoya, Japan, International conference
30 Mar. 2015

Giant Seebeck Coefficiens for the Graphene/h-BN Superlattices
Nakamura; Y.Yokomizo
Oral presentation, English, 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, (ISPlasma 2015), JSAP and APS, Nagoya, Japan, International conference
28 Mar. 2015

窒素ドープグラフェン上の酸素還元反応
市川諒英; 赤石暁; 中村淳
Oral presentation, Japanese, 第６２回応用物理学会春季学術講演会, 応用物理学会, 神奈川県平塚市, Domestic conference
11 Mar. 2015

Catalytic Reduction of Oxygen on Nitrogen-doped Graphene
A.Ichikawa; A.Akaishi; J.Nakamura
Oral presentation, English, 42nd Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI-42), AVS (American Vacuum Society), Snowbird, Utah, USA, International conference
19 Jan. 2015

On the Wettability of Graphene
A.Akaishi; T.Yonemaru; J.Nakamura
Oral presentation, English, Pacific Rim Symposium on Surfaces, Coatings & Interfaces (pacsurf2014), American Vacuum Society, Hawaii, USA, International conference
11 Dec. 2014

Anomalous Enhancement of Seebeck Coefficients for the Graphene/h-BN Superlattices
J.Nakamura; Y.Yokomizo
Oral presentation, English, Pacific Rim Symposium on Surfaces, Coatings & Interfaces (pacsurf2014), American Vacuum Society, Hawaii, USA, International conference
11 Dec. 2014

Universality of Seebeck Coefficients in Graphene/h-BN Nano-Composites
Y.Ayako; A.Akaishi; J.Nakamura
Oral presentation, English, Pacific Rim Symposium on Surfaces, Coatings & Interfaces (pacsurf2014), American Vacuum Society, Hawaii, USA, International conference
08 Dec. 2014

Reduction of Oxygen on Nitrogen-Doped Graphene
A.Ichikawa; A.Akaishi; J.Nakamura
Oral presentation, English, Pacific Rim Symposium on Surfaces, Coatings & Interfaces (pacsurf2014), American Vacuum Society, Hawaii, USA, International conference
08 Dec. 2014

熱電変換材料としてのナノカーボンのポテンシャル
中村淳
Invited oral presentation, Japanese, 東京理科大学総合研究機構ナノカーボン研究部門ワークショップ 実験と理論の強調によるナノ空間・ナノ物質研究の最前線, Invited, 東京理科大学総合研究機構ナノカーボン研究部門, 東京, Domestic conference
25 Nov. 2014

グラフェンナノリボンのバリスティック熱伝導特性
中村淳
Invited oral presentation, Japanese, 第１回ナノトライボロジーワークショップ, Invited, ナノトライボロジー研究ステーション, 調布, Domestic conference
30 Sep. 2014

グラフェンエッジ近傍不純物の構造安定性と電子状態
内田優希; 赤石暁; 中村淳
Oral presentation, Japanese, 第７５回応用物理学会秋季学術講演会, 応用物理学会, Domestic conference
19 Sep. 2014

第一原理計算によるMn吸着GaAs(001)-(nx2)の構造安定性評価
萩原敦; 大竹晃浩; 中村淳
Oral presentation, Japanese, 第７５回応用物理学会秋季学術講演会, 応用物理学会, 札幌, Domestic conference
18 Sep. 2014

窒素ドープグラフェンの構造安定性と電子状態
梅木暁図; 赤石暁; 中村淳
Oral presentation, Japanese, 第７５回応用物理学会秋季学術講演会, 応用物理学会, 札幌, Domestic conference
18 Sep. 2014

窒素ドープグラフェン上の酸素分子吸着
市川諒英; 赤石暁; 中村淳
Oral presentation, Japanese, 第７５回応用物理学会秋季学術講演会, 応用物理学会, 札幌, Domestic conference
18 Sep. 2014

グラフェン/h-BN複合ナノリボンのゼーベック係数
綾子陽介; 赤石暁; 中村淳
Oral presentation, Japanese, 第７５回応用物理学会秋季学術講演会, 応用物理学会, 札幌, Domestic conference
18 Sep. 2014

Configurational Disorder of Mn-induced (2x2) Reconstruction on GaAs(001)
A.Hagiwara; A.Ohtake; J.Nakamura
Poster presentation, English, 18th International Conference on Molecular Beam Expitaxy (MBE2014), American Vacuum Society (AVS), Flagstaff, USA, International conference
11 Sep. 2014

電気通信大学における「パスポートプログラム」の取り組みⅢ
赤石暁; 阿部浩二; 石田尚行; 岡田佳子; 奥野剛史; 清水崇文; 白川英樹; 鈴木勝; 高田亨; 中村淳; 中村仁; 細見斉子; 山北佳宏
Oral presentation, Japanese, 日本物理学会２０１４年秋季大会, 日本物理学会, 春日井, Domestic conference
08 Sep. 2014

電気通信大学における専門教育としてのキャリア教育実践例 『エンジニアリングデザイン』を通した社会人基礎力養成
中村淳
Keynote oral presentation, Japanese, 第４回新任教員研修セミナー, Invited, 公益財団法人 大学セミナーハウス, 八王子, Domestic conference
01 Sep. 2014

Anomalous enhancement of Seebeck coefficients for the graphene/h-BN superlattices
中村 淳
Invited oral presentation, Japanese, 日本表面科学会摩擦の科学研究部会, Invited, 日本表面科学会摩擦の科学研究部会, 調布, Domestic conference
24 May 2014

Anomalous enhancement of Seebeck coefficients for the graphene/h-BN superlattices
J. Nakamura; Y. Yokomizo
Invited oral presentation, English, 2nd International Workshop on Solution Pasma and Molecular Technologies (SPM-2), Invited, Seoul, Korea, International conference
16 May 2014

Recent development of droplet epitaxy in NIMS: InAs QDs on InP(111)A for telecom-application and reconstruction-dependent Ga droplet formation on GaAs (100)
T.Mano; A.Ohtake; T.Kuroda; H.Neul; X.Liu; K.Mitsuishi; A.Hagiwara; J.Nakamura; A.Castellano; S.Sanguinetti; T.Noda; Y. Sakuma; K.Sakoda
Invited oral presentation, English, 2nd Workshop Droplet Epitaxy of Semiconductor Nanostructures, Invited, Florence, Italy, International conference
16 May 2014

Adsorption profiles of oxygen molecule on nitrogen-doped graphne
A. Ichikawa; A. Akaishi; J.Nakamura
Poster presentation, English, 2nd International Workshop on Solution Pasma and Molecular Technologies (SPM-2), Seoul, Korea, International conference
15 May 2014

Graphite is hydrophobic, or not?
T. Yonemaru; A. Akaishi; J.Nakamura
Poster presentation, English, 2nd International Workshop on Solution Pasma and Molecular Technologies (SPM-2), Seoul, Korea, International conference
15 May 2014

Seebeck coefficients of graphene/h-BN nano-composites
Y. Ayako; A. Akaishi; J.Nakamura
Poster presentation, English, 2nd International Workshop on Solution Pasma and Molecular Technologies (SPM-2), Seoul, Korea, International conference
15 May 2014

Structural stability of B-, N-doped zigzag graphene nanoribbons
Y. Uchida; A. Akaishi; J.Nakamura
Poster presentation, English, 2nd International Workshop on Solution Pasma and Molecular Technologies (SPM-2),, Seoul, Korea, International conference
15 May 2014

グラフェンは疎水性か？
米丸朋宏; 中村淳
Oral presentation, Japanese, 第６１回応用物理学会春季学術講演会, 応用物理学会, 相模原, Domestic conference
19 Mar. 2014

Giant Seebeck Coefficients of the Graphene/h-BN Superlattices
Y.Yokomizo; J.Nakamura
Public symposium, English, 41st Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI-41), AVS, Santa Fe, NM, USA
Jan. 2014

Structural stability and electronic structure of boron- or nitrogen-doped graphene
T.Umeki; J.Nakamura
Public symposium, English, American Vacuum Society 60th International Symposium & Exhibition (AVS-60), American Vacuum Society, Long Beach, USA
Oct. 2013

Mn吸着ＧaAs(001)表面の電子状態と構造安定性評価
萩原敦; 大竹晃浩; 奥北和哉; 中村淳
Oral presentation, Japanese, 応用物理学会,第７４回応用物理学会秋季学術講演会
Sep. 2013

物理チャレンジ2013報告：III. 第２チャレンジ理論問題
荒船次郎; 赤井久純; 伊藤敏雄; 川村清; 佐貫平二; 杉山忠男; 鈴木亨; 鈴木直; 高須昌子; 竹中達二; 田中皓; 田中忠芳; 東辻浩夫; 中村淳; 羽田野彰; 松澤通生; 三間圀興; 北原和夫; 近藤泰洋
Oral presentation, Japanese, 日本物理学会,日本物理学会２０１３年秋季大会
Sep. 2013

電気通信大学における「パスポートプログラム」の取り組みII
赤石暁; 阿部浩二; 石田尚行; 岡田佳子; 奥野剛史; 白川英樹; 鈴木勝; 高田亨; 中村淳; 中村仁; 細見斉子; 山北佳宏
Oral presentation, Japanese, 日本物理学会,日本物理学会２０１３年秋季大会
Sep. 2013

Giant Seebeck coefficients of graphene/BN superlattices
Y.Yokomizo; J.Nakamura
Public symposium, English, The 7th International Conference on the Fundamental Science of Graphene and Applications of Graphene-Based Devices (Graphene Week 2013), TU Chemnitz, Chemnitz, Germany
Jun. 2013

Ferromagnetic coupling between Mn atoms on the GaAs(110) surface
M.Hirayama; J.Nakamura; S.Tsukamoto
Public symposium, English, The 40th International Symposium on Compound Semiconductors (ISCS-2013), CS Week, Kobe
May 2013

Effects of surface geometry on the wettability of water on graphene
H.Yonemaru; H.Shimizu; J.Nakamura
Public symposium, English, 1st International Workshop on Solution Plasma and Molecular Technologies (SPM-1), Tokyo, Japan
Mar. 2013

First-pinciples study on the structural stability of boron- and nitrogen-doped graphene
T.Umeki; J.Nakamura
Public symposium, English, 1st International Workshop on Solution Plasma and Molecular Technologies (SPM-1), Tokyo, Japan
Mar. 2013

Giant Seebeck effect of graphene/BN superlattices
Y.Yokomizo; J.Nakamura
Public symposium, English, 1st International Workshop on Solution Plasma and Molecular Technologies (SPM-1), Tokyo, Japan
Mar. 2013

First-principles approach to the ballistic phonon thermal transport in graphene nano-ribbons
J.Nakamura; H.Tomita
Invited oral presentation, English, 1st International Workshop on Solution Plasma and Molecular Technologies (SPM-1), Tokyo, Japan, International conference
Mar. 2013

電気通信大学における「パスポートプログラム」の取り組み
赤石暁; 阿部浩二; 石田尚行; 岡田佳子; 奥野剛史; 白川英樹; 鈴木勝; 高田亨; 中村淳; 中村仁; 細見斉子; 山北佳宏
Oral presentation, Japanese, 日本物理学会,日本物理学会第６８回年次大会
Mar. 2013

STM測定と第一原理計算によるGaAs-c(4×4)α,βの電子構造解析
加来滋; 中村淳; 柳生数馬; 吉野淳二
Oral presentation, Japanese, 応用物理学会,第６０回応用物理学会春季学術講演会
Mar. 2013

Ballistic phonon thermal conductance in graphene nano-ribbon
H.Tomita; J.Nakamura
Public symposium, English, 40th Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI-40), American Vacuum Society, Waikoloa, Hawaii, USA
Jan. 2013

Incorporation of Cr or Mn at the GaAs(001)-c(4x4)a surface
K.Okukita; A.Hagiwara; A.Ohtake; J.Nakamura
Public symposium, English, 40th Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI-40), American Vacuum Society, Waikoloa, Hawaii, USA
Jan. 2013

Effects of surface geometry on the wettability of water on graphene
H.Yonemaru; H.Shimizu; J.Nakamura
Public symposium, English, 40th Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI-40), American Vacuum Society, Waikoloa, Hawaii, USA
Jan. 2013

グラフェンナノリボンの熱伝導特性：第一原理計算からのアプローチ
中村淳
Invited oral presentation, Japanese, 24th International Seminar in Nichia Course, Anan National College of Technology, 阿南工業高等専門学校 地域連携・テクノセンター 寄附講座
Jan. 2013

Atomic Arrangements and structural stability of the Mn adsorbed GaAs(001) surfaces
A.Hagiwara; A.Ohtake; Y.Kanno; S.Yasumura; J.Nakamura
Public symposium, English, American Vacuum Society 59th International Symposium & Exhibition (AVS-59), American Vacuum Society, Tampa, USA
Oct. 2012

Structural stability and electronic states of Cr or Mn on GaAs(001)-c(4x4)
K.Okukita; J.Nakamura
Public symposium, English, The 17th International Conference on Molecular Beam Epitaxy (MBE2012), MBE2012, Nara, Japan
Sep. 2012

Mn吸着GaAs(001)表面の原子配列
大竹晃浩; 萩原敦; 中村淳
Oral presentation, Japanese, 応用物理学会,第７３会応用物理学会学術講演会
Sep. 2012

Ballistic phonon thermal conductancein Graphene Nano-Ribbon: First-principles calculations
Jun Nakamura; Hiroki Tomita
Public symposium, English, 31st International conference on the physics of Semiconductors (ICPS 2012), ETH urich, Zurich
Jul. 2012

第一原理計算を用いた原子レベル物質設計：計算機シミュレーションで探るナノスケールの世界
中村淳
Invited oral presentation, Japanese, 19th International Seminar in Nichia Course, Anan National College of Technology, 阿南工業高等専門学校 地域連携・テクノセンター 寄附講座
Jun. 2012

26pPSB-36 Atomic arrangement and electronic states of the GaAs(001)-(2x2)Mn surface
Kanno Yusuke; Ohtake Akihiro; Nakamura Jun
Japanese, Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS)
05 Mar. 2012
05 Mar. 2012- 05 Mar. 2012

Mn吸着(2x2)-GaAs(001)表面構造および電子状態
菅野雄介; 大竹晃浩; 中村淳
Oral presentation, Japanese, 日本物理学会,日本物理学会第６７回年次大会
Mar. 2012

GeO2酸素欠損近傍の原子レベル誘電特性：結晶構造依存性
中村淳
Oral presentation, Japanese, 配列ナノ空間を利用した新物質科学-ユビキタス元素戦略-第９回特定領域研究会,配列ナノ空間を利用した新物質科学-ユビキタス元素戦略-第９回特定領域研究会
Jan. 2012

Local profile of the dielectric constant near the oxygen vacancy in the GeO2 films
Jun Nakamura; Masahiro Tamura
Public symposium, English, AVS 58th International Symposium & Exhibition, American Vacuum Society, Nashville, USA
Nov. 2011

First-principles approach to ballistic phonon thermal conductivity in Graphene Nano-Ribbon
H.Tomita; J.Nakamura
Public symposium, English, 2011 MRS Fall Meeting, Materials Research Society, USA
Nov. 2011

Optical characteristics of novel two-dimensional carbon materials; A possibility of ultra-transparent materials
Y.Yokomizo; J.Nakamura
Public symposium, English, 2011 MRS Fall Meeting, Materials Research Society, USA
Nov. 2011

First-principles evaluation of the local dielectric properties of GeO2 ultrathin films
Jun Nakamura
Invited oral presentation, English, 15th International Conference on Thin Films (ICTF-15), IUVSTA, Kyoto, Japan, International conference
Nov. 2011

Ballistic phonon thermal conductivity of graphene nano-ribbons
H.Tomita; J.Nakamura
Public symposium, English, International Conference of New Science Created by Materials with Nano Spaces: from Fundamentals to Applications, MEXT, Tsukuba
Nov. 2011

IV-IV 族半導体超格子のナノスケール誘電特性
赤崎充洋; 中村淳
Oral presentation, Japanese, 日本表面科学会,第３１回表面科学学術講演会
Nov. 2011

グラフェンナノリボンのバリスティック熱伝導特性
冨田洋樹; 中村淳
Oral presentation, Japanese, 日本表面科学会,第３１回表面科学学術講演会
Nov. 2011

アームチェアグラフェンナノリボンのバリスティック熱伝導特性
冨田洋樹; 中村淳
Oral presentation, Japanese, 応用物理学会,第７２回応用物理学会学術講演会
Sep. 2011

Er2SiO5結晶・誘電率の第一原理計算
萩原敦; 中村淳
Oral presentation, Japanese, 応用物理学会,第７２回応用物理学会学術講演会
Sep. 2011

Electronic and magnetic properties of chemically‐derived graphene nano-ribbon
Y.Fujii; H.Tomita; J.Nakamura
Public symposium, English, 22nd European Conference on Diamond (Diamond 2011), 22nd European Conference on Diamond (Diamond 2011)
Sep. 2011

GaAs(001)-(2x2)Mn表面の原子配列と電子状態評価
菅野雄介; 大竹晃浩; 平山基; 中村淳
Oral presentation, Japanese, 日本物理学会,日本物理学会２０１１年秋季大会
Sep. 2011

アームチェアグラフェンナノリボンのバリスティック熱伝導特性評価
冨田洋樹; 中村淳
Oral presentation, Japanese, 配列ナノ空間を利用した新物質科学-ユビキタス元素戦略-第４回若手研究会,配列ナノ空間を利用した新物質科学-ユビキタス元素戦略-第４回若手研究会
Jul. 2011

GeO2酸素欠損近傍の原子レベル誘電特性：結晶構造依存性
田村雅大; 中村淳
Oral presentation, Japanese, 配列ナノ空間を利用した新物質科学-ユビキタス元素戦略-第４回若手研究会,配列ナノ空間を利用した新物質科学-ユビキタス元素戦略-第４回若手研究会
Jul. 2011

Mn-induced surface reconstructions on GaAs(001)
A.Ohtake; M.Hirayama; Y.Kanno; J.Nakamura
Public symposium, English, 38th International Symposium on Compound Semiconductors (ISCS-2011), 38th International Symposium on Compound Semiconductors (ISCS-2011), Berlin, Germany
May 2011

酸素欠損GeO2薄膜の原子レベル誘電特性
田村雅大; 赤崎充洋; 中村淳
Oral presentation, Japanese, 応用物理学会,第５８回応用物理学関係連合講演会
Mar. 2011

カルボキシル基終端ジグザググラフェンナノリボンの磁性
藤井雄人; 冨田洋樹; 中村淳
Oral presentation, Japanese, 応用物理学会,第５８回応用物理学関係連合講演会
Mar. 2011

学会における人材育成
中村淳
Keynote oral presentation, Japanese, シンポジウム：キャリアデザインと学会活動―出会える人・テーマ・チャンス―, 応用物理学会, Domestic conference
Mar. 2011

SiCポリタイプにおける誘電率の空間的変調
大杉拓也; 中村淳
Public symposium, Japanese, 配列ナノ空間を利用した新物質科学 ユビキタス元素戦略 第７回領域会議, 大阪大学, 大阪
Jan. 2011

Nano-materials design by first-principles calculations
Jun Nakamura
Invited oral presentation, English, 5th Japanese-French Frontiers of Science Symposium (JFFoS-5), Japan Society for the Promotion of Science and Centre National de la Recherche Scientifique, Tokyo, Japan, International conference
Jan. 2011

GeO2超薄膜およびGeO2/Ge界面の誘電特性：局所誘電特性に及ぼす欠陥の影響
田村雅大; 涌井貞一; 中村淳
Oral presentation, Japanese, 日本表面科学会,第３０回表面科学学術講演会
Nov. 2010

SiON/SiC界面の誘電率不連続性
大杉拓也; 中村淳
Oral presentation, Japanese, 日本表面科学会,第３０回表面科学学術講演会
Nov. 2010

カルボキシル基終端グラフェンナノリボンの磁性
藤井雄人; 中村淳
Oral presentation, Japanese, 日本表面科学会,第３０回表面科学学術講演会
Nov. 2010

BN結晶多形ヘテロ構造の電子状態
加藤豪; 中村淳
Oral presentation, Japanese, 日本表面科学会,第３０回表面科学学術講演会
Nov. 2010

酸素吸着多角柱型カーボンナノシリンダーの構造安定性と電子状態評価
藤井雄人; 中村淳
Oral presentation, Japanese, 日本表面科学会,第３０回表面科学学術講演会
Nov. 2010

Electronic and Magnetic Properties of Functionalized Graphene
Y.Fujii; J.Nakamura
Public symposium, English, American Vacuum Society 57th International Symposium & Exhibition (AVS-57), American Vacuum Society, Albuquerque
Oct. 2010

Band and Dielectric Discontinuities of the Si1-xGe/Si1-yCy Superlattices
T.Ohsugi; J.Nakamura
Public symposium, English, American Vacuum Society 57th International Symposium & Exhibition (AVS-57), American Vacuum Society, Albuquerque
Oct. 2010

学会における若手支援の取り組み
中村淳
Keynote oral presentation, Japanese, 「医学物理士が切り拓く最新放射線がん治療」（第７１回応用物理学会学術講演会シンポジウム）, 応用物理学会, Domestic conference
Sep. 2010

「博士のキャリア相談会」で考えさせられたこと：若手は学会に何を望む？
中村淳
Keynote oral presentation, Japanese, 博士のキャリアデザイン（第７１回応用物理学会学術講演会パネル討論会）, 応用物理学会, Domestic conference
Sep. 2010

SiC薄膜上におけるSiON超薄膜の誘電率
大杉拓也; 中村淳
Oral presentation, Japanese, 応用物理学会,第７１回応用物理学会学術講演会
Sep. 2010

GeO2超薄膜およびGeO2/Ge界面のナノスケール誘電特性
田村雅大; 中村淳
Oral presentation, Japanese, 応用物理学会,第７１回応用物理学会学術講演会
Sep. 2010

カルボキシル基終端ジグザググラフェンナノリボンの電子状態と磁性
藤井雄人; 中村淳
Oral presentation, Japanese, 応用物理学会,第７１回応用物理学会学術講演会
Sep. 2010

Sb安定化GaAs(001)-(2x5)表面の原子配列
大竹晃浩; 平山基; 中村淳
Oral presentation, Japanese, 日本物理学会,日本物理学会2010年秋季大会
Sep. 2010

Percolation properties of nanotube/polymer composites
N.Ainoya; J.Nakamura; A.Natori
Public symposium, English, 18th International Vacuum Congress (IVC-18), International Union for Vacuum Science, Technique and Applications, Beijing, China
Aug. 2010

Structural and electronic properties of “oxidized” carbon-nanocylinder
Y.Fujii; J.Nakamura; A.Natori
Public symposium, English, The 37th International Symposium on Compound Semiconductors (ISCS-37), International Symposium on Compound Semiconductors, Takamatsu
Jun. 2010

Evaluation of the local dielectric constant near the oxygen vacancy for the defective HfO2 and SiO2 films
S.Wakui; J.Nakamura; A.Natori
Public symposium, English, The 37th International Symposium on Compound Semiconductors (ISCS-37), International Symposium on Compound Semiconductors, Takamatsu
Jun. 2010

Magnetic coupling between Mn atoms on GaAs(110)
M.Hirayama; J.Nakamura; A.Natori
Public symposium, English, The 37th International Symposium on Compound Semiconductors (ISCS-37), International Symposium on Compound Semiconductors, Takamatsu
Jun. 2010

Local profile of dielectric constants near the oxygen vacancy in GeO2
M.Tamura; J.Nakamura; A.Natori
Public symposium, English, International Symposium on Technology Evolution for Silicon Nano-Electronics (ISTESNE), International Symposium on Technology Evolution for Silicon Nano-Electronics (ISTESNE), Tokyo, Japan
Jun. 2010

BN結晶多形を利用したホモマテリアル・ヘテロ構造の電子状態
加藤豪; 中村淳
Public symposium, Japanese, 「配列ナノ空間を利用した新物質科学 ユビキタス元素戦略」第６回領域会議, 東北大学谷垣研究室, 名古屋
May 2010

ホモマテリアルヘテロ界面の周期配列制御によるメタマテリアルの創製
中村淳
Public symposium, Japanese, 「配列ナノ空間を利用した新物質科学 ユビキタス元素戦略」第６回領域会議, 東北大学谷垣研究室, 名古屋
May 2010

Si(001)/La2O3(01-10)界面の第一原理的バンドオフセット評価
谷内良亮; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第５７回応用物理学関係連合講演会
Mar. 2010

第一原理計算によるEr2SiO5の結晶構造と電子状態評価
植田啓史; 中村淳; 名取晃子; 一色秀夫
Oral presentation, Japanese, 応用物理学会,第５７回応用物理学関係連合講演会
Mar. 2010

有限電界下の第一原理計算を用いたSiGe混晶の誘電率評価
佐藤耕平; 大杉拓也; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第５７回応用物理学関係連合講演会
Mar. 2010

カーボンナノチューブ分散媒質の交流電気伝導特性
挾間裕一; 相野谷直樹; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第５７回応用物理学関係連合講演会
Mar. 2010

Si/SiO2量子井戸内D-イオン束縛エネルギーの井戸幅依存性：valley-orbit相互作用効果
千葉朋; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会第６５回年次大会
Mar. 2010

HfO2・SiO2薄膜における酸素欠損近傍の局所誘電率評価
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会第６５回年次大会
Mar. 2010

GaAs(110)表面上のMnAs単分子層膜の磁性
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会第６５回年次大会
Mar. 2010

有限電界下の第一原理計算による局所誘電率評価の試み
中村淳
Invited oral presentation, Japanese, 物質・材料研究機構第８７回QDRセミナー, 物質・材料研究機構
Dec. 2009

Ge酸化物超薄膜の誘電特性
田村雅大; 涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本表面科学会,第２９回表面科学学術講演会
Oct. 2009

列状酸素吸着カーボンナノシリンダーの構造安定性
藤井雄人; 平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 日本表面科学会,第２９回表面科学学術講演会
Oct. 2009

CNT分散媒質の異方的交流電気伝導特性
挾間裕一; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第７０回応用物理学会学術講演会
Sep. 2009

列状酸素吸着CNTの構造安定性と電子物性評価
藤井雄人; 平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第７０回応用物理学会学術講演会
Sep. 2009

第一原理計算によるSi(001)/La2O3(01-10)界面のバンドオフセット評価
谷内良亮; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第７０回応用物理学会学術講演会
Sep. 2009

HfO2薄膜の誘電特性：結晶構造依存性
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第７０回応用物理学会学術講演会
Sep. 2009

GaAs(110)表面上Ga置換Mn原子鎖の原子鎖間磁気相互作用
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第７０回応用物理学会学術講演会
Sep. 2009

バルクSi及びSi量子井戸内D-イオンのvalley-orbit分裂
千葉朋; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第７０回応用物理学会学術講演会
Sep. 2009

Nano-scale profile of the dielectric constant near surfaces and interfaces: A first-principles approach
Jun Nakamura
Invited oral presentation, English, 2nd International Workshop on Epitaxial growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2009), Anan National College of Technology, Anan, Japan, International conference
Aug. 2009

Inter-wire coupling of the Ga-substituted Mn atomic wire on GaAs(110)
Motoi Hirayama; Jun Nakamura; Akiko Natori
Invited oral presentation, English, 2nd International Workshop on Epitaxial growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2009), Anan National College of Technology, Anan, Japan, International conference
Aug. 2009

「学会における若手人材育成―ト応物があなたのキャリアデザインを応援します―」報告
庄司一郎; 石榑崇明; 中村淳; 小舘香椎子; 岩本光正; 河野明廣
Others, Japanese, 人材育成・男女共同参画委員会、刊行委員会、JJAP/APEX編集委員会,応用物理
Apr. 2009

GaAs(110)表面上のGa置換Mn原子ワイヤの原子配置とスピン・電子状態
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第５６回応用物理学関係連合講演会
Mar. 2009

歪みHfO2薄膜の誘電特性
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第５６回応用物理学関係連合講演会
Mar. 2009

In-plane strain effects on dielectric properties of the HfO2 thin film
S.Wakui; J.Nakamura; A.Natori
Oral presentation, English, 36th Conference on the Physics and Chemistry of Surfaces and Interfaces
Jan. 2009

Anisotropic half-metallic ground states of Mn atomic wires on GaAs(110)
M.Hirayama; J.Nakamura; A.Natori
Oral presentation, English, 36th Conference on the Physics and Chemistry of Surfaces and Interfaces
Jan. 2009

応用物理学会における人材育成と男女共同参画の取り組み
中村淳
Invited oral presentation, Japanese, 東京工業大学理工系女性研究者プロモーションプログラム講演会, 東京工業大学
Jan. 2009

GaAs(110)表面上のGa置換Mn原子鎖のスピン状態と電子状態
平山基; 中村淳; 名取晃子
Public symposium, Japanese, The 13th Symposium on the Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS13), 東北大学, 仙台
Jan. 2009

HfO2/La2O3超薄膜の誘電特性
涌井貞一; 谷内良亮; 中村淳; 名取晃子
Public symposium, Japanese, シリコンナノエレクトロニクスの新展開-ポストスケーリングテクノロジー第３回成果報告会, 名古屋大学, 東京
Jan. 2009

博士のキャリア相談会―トライアル開催の報告―
中村淳; 小舘香椎子
Others, Japanese, 応用物理学会人材育成・男女共同参画委員会,応用物理
Nov. 2008

最先端表面研究が切り拓くナノエレクトロニクスのブレークスルー原子レベルから環境にやさしく
中村淳
Keynote oral presentation, Japanese, 第２８回表面科学学術講演会, 日本表面科学会, Domestic conference
Nov. 2008

GaAs(110)表面上のGa置換Mn原子鎖のスピン状態と電子状態
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 日本表面科学会,第２８回表面科学学術講演会
Nov. 2008

HfO2超薄膜の誘電特性
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本表面科学会,第２８回表面科学学術講演会
Nov. 2008

カーボンナノチューブ分散媒質の異方的電気伝導特性
挾間裕一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本表面科学会,第２８回表面科学学術講演会
Nov. 2008

酸素吸着グラフェンの積層構造の構造安定性と凝集性質
江口俊輔; 中村淳; 名取晃子
Oral presentation, Japanese, 日本表面科学会,第２８回表面科学学術講演会
Nov. 2008

Si(111)-(7×7)表面上の銀クラスター形成過程の計算機シミュレーション
千葉朋; 冷清水裕子; 泉水一紘; 須藤彰三; 中村淳; 名取晃子
Oral presentation, Japanese, 日本表面科学会,第２８回表面科学学術講演会
Nov. 2008

La2O3(0001)超薄膜の誘電特性
谷内良亮; 涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本表面科学会,第２８回表面科学学術講演会
Nov. 2008

Activities of the Japan Society of Applied Physics (JSAP)
Activities of the Japan; Society of; Applied; Physics (JSAP; The; rd IUPAP International Conference on Women in Physics; Oc; Seoul, Korea; K.Ishikawa; M.N-.Gamo; K.Ishikawa; M.O.Watanabe; Y.Toyama; H.Iijima; K.Ito; J.Nakamura; K.Kodate
Public symposium, English, The 3rd IUPAP International Conference on Women in Physics 2008, The Korean Physical Society, Seoul, Korea
Oct. 2008

La2O3(0001)超薄膜の誘電特性
谷内良亮; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第６９回応用物理学会学術講演会
Sep. 2008

HfO2超薄膜の局所誘電率プロファイル
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第６９回応用物理学会学術講演会
Sep. 2008

GaAs(110)表面上のGa置換Mn原子ワイヤの原子配置とスピン・電子状態
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第６９回応用物理学会学術講演会
Sep. 2008

SiC結晶多形の誘電率：第一原理計算による積層構造依存性評価
佐藤耕平; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第６９回応用物理学会学術講演会
Sep. 2008

学会における若手人材育成―応物があなたのキャリアデザインを応援します―
庄司一郎; 石榑崇明; 中村淳; 小舘香椎子
Oral presentation, Japanese, 応用物理学会,第６９回応用物理学会学術講演会
Sep. 2008

Si(111)-(7x7)表面上の銀クラスター形成過程の計算機シミュレーション
千葉朋; 冷清水裕子; 泉水一紘; 須藤彰三; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第６９回応用物理学会学術講演会
Sep. 2008

GaAs(110)表面上のGa置換Mnナノワイヤの原子配置とスピン・電子状態
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００８年秋季大会
Sep. 2008

異方的な超微粒子分散媒質の高周波電気伝導特性
挾間裕一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００８年秋季大会
Sep. 2008

グラフェンリボンのバリスティック熱コンダクタンス
山口翔; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００８年秋季大会
Sep. 2008

酸化グラフェン積層物質の構造安定性
江口俊輔; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００８年秋季大会
Sep. 2008

GaAs(001)-(2x4)-Sb吸着構造の再検討
大竹晃浩; 平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００８年秋季大会
Sep. 2008

Anomalous enhancement of the local dielectric constant near defects in SiO2
S.Wakui; J.Nakamura; A.Natori
Public symposium, English, 14th International Conference on Solid Films and Surfaces (ICSFS-14), 14th International Conference on Solid Films and Surfaces (ICSFS-14), Dublin, Ireland
Jul. 2008

Polytype dependence of permittivity of SiC films
J.Nakamura; K-H.Sato; Y.Iwasaki; S.Wakui; A.Natori
Public symposium, English, 14th International Conference on Solid Films and Surfaces (ICSFS-14), 14th International Conference on Solid Films and Surfaces (ICSFS-14), Dublin, Ireland
Jul. 2008

GaAs(110)表面上のGa置換Mn原子鎖のスピン状態
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 第４回量子ナノ材料セミナー,第４回量子ナノ材料セミナー, 電気通信大学, 調布
Jul. 2008

GaAs(110)表面上のGa置換Mn原子鎖のスピン状態
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 第４回量子ナノ材料セミナー,第４回量子ナノ材料セミナー
Jul. 2008

Atomic-scale friction of nanometer-sized contacts
M.Igarashi; J.Nakamura; A.Natori
Public symposium, English, 14th International Conference on Solid Films and Surfaces (ICSFS-14), 14th International Conference on Solid Films and Surfaces (ICSFS-14), Dublin, Ireland
Jun. 2008

First-principles calculations on STM images for subsurface dopants: tip-induced band-bending and dependence on dopant species
M.Hirayama; J.Nakamura; A.Natori
Public symposium, English, 14th International Conference on Solid Films and Surfaces (ICSFS-14), 14th International Conference on Solid Films and Surfaces (ICSFS-14), Dublin, Ireland
Jun. 2008

人材育成・男女共同参画第８回ミーティング報告「博士『後』のキャリアを考える２」
津村徳道; 中村淳; 庄司一郎; 坂野井和代
Others, Japanese, 応用物理学会 人材育成・男女共同参画委員会,応用物理 77, 581 (2008)
May 2008

Si/酸化物界面近傍における誘電率の空間分布：第一原理計算による評価
中村淳
Invited oral presentation, Japanese, 東京大学物性研究所客員所員講演会, 東京大学物性研究所
Apr. 2008

欠陥のあるSiO2/Si(001)界面・SiO2超薄膜の局所誘電率評価
涌井貞一; 中村淳; 名取晃子
Public symposium, Japanese, シリコンナノエレクトロニクスの新展開-特定領域研究ポストスケール第２回成果報告会, 名古屋大学, 東京
Mar. 2008

多谷半導体中のD-基底状態：磁場効果
井上純一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会第６３回年次大会
Mar. 2008

SiO2/Si(001)界面におけるナノスケール誘電特性の第一原理計算
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会第６３回年次大会
Mar. 2008

ナノスケールの摩擦機構：ティップサイズ効果
五十嵐正典; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会第６３回年次大会
Mar. 2008

不純物ドープSi(111)表面のSTM像の第一原理計算II：STM像の不純物原子種依存性
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会第６３回年次大会
Mar. 2008

Si(111)水素終端表面近傍不純物のSTMシミュレーション：不純物種依存性と探針誘起バンドベンディング
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第５５回応用物理学関係連合講演会
Mar. 2008

SiO2薄膜中の欠陥近傍における局所誘電率の異常増大
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第５５回応用物理学関係連合講演会
Mar. 2008

（グラフェンの応用物性）グラフェンの酸化とコンポジット材料
中村淳; 伊藤潤; 尾越勇太; 名取晃子
Invited oral presentation, Japanese, 第５５回応用物理学関係連合講演会, 応用物理学会
Mar. 2008

Dielectric properties of the interface between Si and SiO_2
Sadakazu Wakui; Jun Nakamura; Akiko Natori
Oral presentation, English, American Vacuum Society
Jan. 2008

Band-bending effects on STM images for subsurface dopants
Motoi Hirayama; Jun Nakamura; Akiko Natori
Public symposium, English, 15th International Colloquium on Scanning Probe Microscopy, Japan Society of Applied Physics, Atagawa (Shizuoka)
Dec. 2007

Si量子ドットの多電子基底状態
桝日向; 中村淳; 名取晃子
Oral presentation, Japanese, 表面科学会,第２７回表面科学講演大会
Nov. 2007

Dielectic properties of the interface between Si adn SiO2
S.Wakui; J.Nakamura; A.Natori
Public symposium, English, 5th International Symposium on Control of Semiconductor Interfaces (ISCSI2007), The 154th Committee on Semiconductor Interfaces and Their Applications, Japan Society for the Promotion of Science (JSPS), Hachiouji, Japan
Nov. 2007

Nano-scale profile of the dielectric constant near the Si/Oxide interface: A first-principles approach
Jun Nakamura
Invited oral presentation, English, 212th Electrochemical society (ECS-212), The Electrochemical Society, Washington D.C., International conference
Oct. 2007

グラフェンのバリスティック熱伝導特性
斎藤浩一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会第６２回年次大会
Sep. 2007

Mechanism of velocity saturation and lateral resonance in atomic-scale sliding friction
M.Igarashi; J.Nakamura; A.Natori
Public symposium, English, International Conference on Nano Science and Technology (ICN+T 2007), International Union of Vacuum Science, Technique and Applications (IUVSTA), Stockholm, Sweden
Jul. 2007

STM simulations for B- and P-doped Si(111) surfaces
M.Hirayama; J.Nakamura; A.Natori
Public symposium, English, International Conference on Nano Science and Technology (ICN+T 2007), International Union of Vacuum Science, Technique and Applications (IUVSTA), Stockholm, Sweden
Jul. 2007

Mechanism of velocity saturation of atomic friction force and the dynamic superlubricity
J.Nakamura; J.Ito; A.Natori
Public symposium, English, International Conference on Nano Science and Technology (ICN+T 2007), International Union of Vacuum Science, Technique and Applications (IUVSTA), Stockholm, Sweden
Jul. 2007

１次元Tomlinsonモデルを用いた原子レベル摩擦機構の解明
中村淳
Invited oral presentation, Japanese, 豊田理化学研究所・特定課題研究「ナノトライボロジー」平成１９年度第一回研究会, 豊田理化学研究所
Jun. 2007

有限温度原子レベル摩擦機構～１次元Tomlinsonモデルによる解析～
中村淳
Invited oral presentation, Japanese, 日本物理学会２００７年春季大会シンポジウム：ナノスコピック系の摩擦の物理：摩擦の素過程と制御, 日本物理学会
Mar. 2007

第一原理計算によるSiO2/Si(001)界面のナノスケール誘電特性評価
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００７年春季大会
Mar. 2007

不純物ドープSi(111)表面のSTM像の第一原理計算
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第５４回応用物理学関係連合講演会
Mar. 2007

酸素吸着グラフェンの構造双安定性の第一原理計算
伊藤潤; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００７年春季大会
Mar. 2007

SiO2/Si(001)界面のナノスケール誘電特性
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第５４回応用物理学関係連合講演会
Mar. 2007

不純物ドープSi(111)表面のSTM像の第一原理計算
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第５４回応用物理学関係連合講演会
Mar. 2007

SiO2/Si(001)界面のナノスケール誘電特性
涌井貞一; 中村淳; 名取晃子
Public symposium, Japanese, ゲートスタック研究会第１２回研究会, 応用物理学会, 三島
Feb. 2007

外部電場はSi(001)面の表面超構造を変化させるか？
中村淳
Invited oral presentation, Japanese, 第１回NIMSナノ計測センターシンポジウム「半導体表面における構造と物性の新展開 - Si(001)とGe(001)表面を中心として -」, 物質・材料研究機構
Feb. 2007

ac conductivity and dielectric constant of conductor-insulator composites
Y.Koyama; T.B.Murutanto; J.Nakamura; A.Natori
Public symposium, English, 6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics (Polytronic 2006), IEEE
Jan. 2007

B／PドープSi(111)表面のSTM像の第一原理シミュレーション
平山基; 中村淳; 名取晃子
Public symposium, Japanese, 第6回ドーパント計測研究会, 産業技術総合研究所, つくば
Jan. 2007

STM simulations for B- and P-doped Si(111) surfaces
H.Hirayama; J.Nakamura; A.Natori
Public symposium, English, The 14th International Colloquium on Scanning Probe Microscopy (ICSPM-14), The Japan Society of Applied Physics
Dec. 2006

Mechanism of velocity saturation of atomic friction force and the dynamic superlubricity at torsional resonance
M.Igarashi; J.Nakamura; A.Natori
Public symposium, English, The 14th International Colloquium on Scanning Probe Microscopy (ICSPM-14), The Japan Society of Applied Physics
Dec. 2006

人材育成・男女共同参画第８回ミーティング報告「博士『後』のキャリアを考える」
坂野井和代; 中村淳; 庄司一郎; 近藤高志
Others, Japanese, 応用物理学会 人材育成・男女共同参画委員会,応用物理
Dec. 2006

Deielectproperties of the interface between Si and SiO2
Sadakazu Wakui; Jun Nakamura; Akiko Natori
Public symposium, English, 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices - Science and Technology, The Japan Society of Applied Physics, Kawasaki
Nov. 2006

First-principles calculation of electrostatic property of the interface: Ultra-thin Al/Si(111)
Tomo Shimizu; Kenji Natori; Jun Nakamura; Akiko Natori
Public symposium, English, 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices - Science and Technology, The Japan Society of Applied Physics, Kawasaki
Nov. 2006

First-principles evaluations of dielectric properties from nano-scale of points of view
Jun Nakamura; Sadakazu Wakui; Akiko Natori
Invited oral presentation, English, 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT-8), IEEE, Shanghai, International conference
Oct. 2006

第一原理計算に基づく絶縁超薄膜誘電率の理論的解析
中村淳
Invited oral presentation, Japanese, Nano CMOS 今後１５年の展望とその技術課題, IEEE-EDS Japan Chapter
Sep. 2006

D-基底状態の拡散量子モンテカルロ計算：有効質量異方性および多谷効果
井上純一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００６年秋期大会
Sep. 2006

原子摩擦力の速度飽和機構
五十嵐正典; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００６年秋期大会
Sep. 2006

Dielectric discontinuity at a twin boundary in Si(111)
Jun Nakamura; Akiko Natori
Public symposium, English, ICPS-28 (28th International Conference on the Physics of Semiconductors), International Conference on the Physics of Semiconductors, Vienna, Austria
Jul. 2006

Charge correlation and spin coupling in double quantum dots
Hyuga Masu; Jun Nakamura; Akiko Natori
Public symposium, English, ICPS-28 (28th International Conference on the Physics of Semiconductors), International Conference on the Physics of Semiconductors, Vienna, Austria
Jul. 2006

第一原理計算による極薄膜Al/Si界面の検討：界面水素終端の影響
清水共; 名取研二; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第５３回応用物理学関係連合講演会
Mar. 2006

縦型２重量子ドットのスピン結合と磁場制御
桝日向; 山田太一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会第６１回年次大会
Mar. 2006

Si(111)双晶境界近傍の局所的誘電率変化
中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会第６１回年次大会
Mar. 2006

First-principles calculations of dielectric constatns for ultrathin SiO2 films
S.Wakui; J.Nakamura; A.Natori
Oral presentation, English, 33rd Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-33)
Jan. 2006

Dielectric discontinuity at a stacking fault in Si(111)
J.Nakamura; A.Natori
Oral presentation, English, 33rd Conference on the Physics and Chemisty of Semiconductor Interfaces (PCSI-33)
Jan. 2006

First-Principles evaluations of dielectric constants
J.Nakamura; S.Wakui; A.Natori
Invited oral presentation, English, IEEE-EDS International Workshop on Nano CMOS, IEEE-EDS, Mishima, Japan, International conference
Jan. 2006

First-principles calculations of dielectric constants for ultrathin SiO2 films
S.Wakui; J.Nakamura; A.Natori
Oral presentation, English, ISSS-4 (4-th International Symposium on Surface Science and Nanotechnology)
Nov. 2005

First-principles calculations on adsorption and diffusion of oxygen atoms on graphene sheets
J.Ito; J.Nakamura; A.Natori
Oral presentation, English, ISSS-4 (4-th International Symposium on Surface Science and Nanotechnology)
Nov. 2005

Structural stabilities and electronic properties of planar Si compounds
M.Hirayama; J.Nakamura; A.Natori
Oral presentation, English, ISSS-4 (4-th International Symposium on Surface Science and Nanotechnology)
Nov. 2005

Controlling the spin coupling in double quantum dots
H.Masu; J.Nakamura; A.Natori
Oral presentation, English, ISSS-4 (4-th International Symposium on Surface Science and Nanotechnology)
Nov. 2005

Dielectric properties for ultra-thin films of the polytypes of SiC
J.Nakamura; A.Natori
Oral presentation, English, ISSS-4 (4-th International Symposium on Surface Science and Nanotechnology)
Nov. 2005

Atomic scale mechanism of friction
S.Wakunami; J.Nakamura; A.Natori
Oral presentation, English, ISSS-4 (4-th International Symposium on Surface Science and Nanotechnology)
Nov. 2005

Electronic and magnetic properties of BNC ribbons
T.Nitta; J.Nakamura; A.Natori
Oral presentation, English, ISSS-4 (4-th International Symposium on Surface Science and Nanotechnology)
Nov. 2005

Ga- and As-Rich Limit of Surface Reconstruction on GaAs(001)
A.Ohtake; P.Kocan; K.Seino; W.G.Schmidt; J.Nakamura; A.Natori; N.Koguchi
Oral presentation, English, European Conference on Surface Science (ECOSS-23)
Sep. 2005

Friction mechanism in atomic-scale
S.Wakunami; J.Nakamura; A.Natori
Oral presentation, English, European Conference on Surface Science (ECOSS-23)
Sep. 2005

First-principles evaluations of dielectric constants for ultra-thin semiconducting films
J.Nakamura; A.Natori
Oral presentation, English, European Conference on Surface Science (ECOSS-23)
Sep. 2005

SiO2超薄膜の誘電特性
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００５年秋期大会
Sep. 2005

原子レベルの摩擦機構
涌波信弥; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００５年秋期大会
Sep. 2005

SiC多形超薄膜の誘電特性
中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００５年秋期大会
Sep. 2005

グラフェンシートの酸素吸着と拡散過程の第一原理計算
伊藤潤; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００５年秋期大会
Sep. 2005

若手からの提言「多様化するライフスタイルとキャリアプラン」
中村淳; 青木画奈
Others, Japanese, 応用物理
Dec. 2004

ポスドク制度の実態報告
中村淳
Keynote oral presentation, Japanese, 第６５回応用物理学会学術講演会, Domestic conference
Sep. 2004

ポスドク・任期付き技術者／研究者の現状と将来像
中村淳
Keynote oral presentation, Japanese, 第６４回応用物理学会学術講演会, Domestic conference
Sep. 2003

Tunneling properties of SiO2 ultra thin films
Watarai M.; Nakamura J.; Natori A.
Japanese, Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS)
13 Aug. 2002
13 Aug. 2002- 13 Aug. 2002

A new structure model proposed for the GaAs(001)-c(4×4) surface
Ohtake A.; Nakamura J.; Tsukamoto S.; Koguchi N.; Natori A.
Japanese, Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS)
13 Aug. 2002
13 Aug. 2002- 13 Aug. 2002

25pPSB-43 Dimer buckling dynamics on Si(100) surfaces
Osanai M.; Nakamura J.; Yasunaga H.; Natori A.
Japanese, Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS)
01 Mar. 2002
01 Mar. 2002- 01 Mar. 2002

25pPSB-60 Two-dimensional current distribution between two current probesin inhomogeneous surfaces
Natori A.; Itoh T.; Nakamura J.; Yasunaga H.
Japanese, Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS)
01 Mar. 2002
01 Mar. 2002- 01 Mar. 2002

Interface Structural analysis using medium-energy coaxial impact-collision ion scattering spectroscopy
H.Sone; T.Kobayashi; G.Dorenbos; J.Nakamura; M.Aono; C.F.McConville
Invited oral presentation, English, ICAARI-6, Texas, USA, International conference
2000

Structure and electronic states for a double strand of Au atoms
J.Nakamura
Invited oral presentation, English, 24th Relativity Workshop: The Society for Discrete Variational Xa, Invited, The Society for Discrete Variational Xa, Kyoto, Japan, International conference
Sep. 1999

上級コンピュータ演習
The University of Electro-Communications

上級コンピュータ演習
電気通信大学

基盤理工学専攻基礎
The University of Electro-Communications

基盤理工学専攻基礎
電気通信大学

UECパスポートプログラムB
The University of Electro-Communications

UECパスポートプログラムB
電気通信大学

UECパスポートプログラムA
The University of Electro-Communications

UECパスポートプログラムA
The University of Electro-Communications

ナノエレクトロニクス特論
The University of Electro-Communications

ナノエレクトロニクス特論
電気通信大学

基礎電磁気学および演習
The University of Electro-Communications

凝縮系物理学特別講義IV
千葉大学大学院理学研究科

凝縮系物理学特別講義IV
千葉大学大学院理学研究科

総合コミュニケーション科学
The University of Electro-Communications

Ｋ課程輪講
The University of Electro-Communications

電磁気学および演習
The University of Electro-Communications

電磁気学および演習
電気通信大学

基礎電磁気学および演習
The University of Electro-Communications

基礎電磁気学および演習
電気通信大学

総合コミュニケーション科学
The University of Electro-Communications

総合コミュニケーション科学
電気通信大学

ＵＥＣパスポートプログラムII
The University of Electro-Communications

ＵＥＣパスポートプログラムI
The University of Electro-Communications

UECパスポートセミナー
The University of Electro-Communications

数値計算法
The University of Electro-Communications

計算数理工学
The University of Electro-Communications

固体電子論
The University of Electro-Communications

ナノエレクトロ二クス特論
The University of Electro-Communications

電磁気学第一
The University of Electro-Communications

Ｋ課程輪講
The University of Electro-Communications

Ｋ課程輪講
電気通信大学

先進理工学専攻基礎
The University of Electro-Communications

先進理工学専攻基礎
電気通信大学

ＵＥＣパスポートプログラムII
The University of Electro-Communications

ＵＥＣパスポートプログラムII
電気通信大学

ＵＥＣパスポートプログラムI
The University of Electro-Communications

ＵＥＣパスポートプログラムI
電気通信大学

UECパスポートセミナー
The University of Electro-Communications

UECパスポートセミナー
電気通信大学

数値計算法
The University of Electro-Communications

数値計算法
電気通信大学

電子工学実験第一
The University of Electro-Communications

電子工学実験第一
The University of Electro-Communications

電子工学実験第一
電気通信大学

計算数理工学
The University of Electro-Communications

計算数理工学
電気通信大学

固体電子論
The University of Electro-Communications

固体電子論
電気通信大学

ナノエレクトロ二クス特論
The University of Electro-Communications

ナノエレクトロ二クス特論
電気通信大学

電磁気学第一
The University of Electro-Communications

電磁気学第一
電気通信大学

Jan. 2005 - Present
American Vacuum Society

日本工学アカデミー

日本表面真空学会

Electrochemical Society

American Chemical Society

表面科学会

応用物理学会

日本物理学会

アメリカ物理学会

一酸化炭素還元能を発現させる非平面π共役系原子配列の設計と評価
中村 淳
日本学術振興会, 科学研究費助成事業, 電気通信大学, 基盤研究(C), 24K08242
01 Apr. 2024 - 31 Mar. 2027

二次元錯体配列によるシナジェティック触媒の新展開
藪 浩; 中村 淳; 熊谷 明哉
日本学術振興会, 科学研究費助成事業, 東北大学, 基盤研究(A), 23H00301
01 Apr. 2023 - 31 Mar. 2026

Development of the novel ferromagnetic materials by the two-dimensional structure control and clarification of the mechanism of the ferromagnetism for Mn-GaAs
NAKAMURA Jun; OHTAKE Akihiro
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), The University of Electro-Communications, Grant-in-Aid for Scientific Research (B), A combined experimental and theoretical study on the incorporation of Mn in GaAs has been presented. We have successfully controlled the location of Mn atoms at GaAs(001) surfaces by changing the surface atomic geometry. While Mn atoms prefer to substitute Ga sites at a subsurface layer under the As-rich conditions, the incorporation into interstitial sites becomes more favorable as the surface As coverage is decreased. The present results provide a mechanism for the enhanced incorporation of substitutional Mn atoms in GaMnAs under low-temperature (i.e., As-rich) growth conditions., 22360020
2010 - 2012

ホモマテリアルヘテロ界面の周期配列制御によるメタマテリアルの創製
中村 淳
日本学術振興会, 科学研究費助成事業 特定領域研究, 電気通信大学, 特定領域研究, 本研究は、(1)人工的に制御された「ホモマテリアルヘテロ界面」構造を利用したヘテロ界面の基礎物理モデルの構築と、(2)その周期配列制御によるメタマテリアルの創製、を目論むものである。すなわち、本質的に界面の格子不整合を含まない同物質の異結晶形ヘテロ構造を利用して、新たなメタマテリアルの創製とそのヘテロ構造デバイスへの応用の可能性を探る。昨年までにとりあげた窒化ホウ素(BN)に加え、本年はIV-IV族化合物半導体として最も典型的な物質で、ワイドバンドギャップ半導体として応用上も非常に重要な炭化ケイ素(SiC)、およびポストスケール世代の半導体材料として注目されるSiGe混晶を対象として、その「ホモマテリアルヘテロ界面」の電子状態を評価した。密度汎関数理論に基づく第一原理計算を用いて結晶多形超格子の電子状態計算を行った。用いた結晶多形は、立方晶系(閃亜鉛鉱構造)の3C、および六方晶系の2H(ウルツ鉱構造)、4H、および6Hである。本研究では3C/nHタイプの超格子(n=2,4,6)を考えた。SiCやSiGeのようなIV-IV族半導体および昨年評価を行ったBNのようなIII-V族化合物半導体の超格子はいずれもタイプIIの超格子となり、一方IV族単体半導体同士のヘテロ界面を用いるといずれもタイプIの超格子となることがわかった。化合物であるか単体であるかによって超格子のタイプが異なるのは、そのバンドダイヤグラムから理解可能であることが示された。また、各超格子について局所誘電率(屈折率)の空間プロファイルを評価したところ、界面近傍における誘電率の変化領域は原子レベル(高々2から3原子層以内)であることがわかった。ホモマテリアルヘテロ界面を用いることによって、急峻な界面特性を持つ超格子を作製可能であることが理論的に示された。, 22013006
2010 - 2011

ナノスケールSiO2/Si界面の局所誘電特性に及ぼす欠陥の影響
名取 晃子; 中村 淳
日本学術振興会, 科学研究費助成事業 特定領域研究, 電気通信大学, 特定領域研究, 電界印加下の密度汎関数基底状態計算(B. Meyer et al., Phys. Rev. B 63(2001)205426)を用いて電界誘起電荷密度を求め、ガウス分布フィルターを用いて粗視化を行う。粗視化された電界誘起電荷観密度を用いてガウス則より粗視化された局所内部電界を評価し、電束密度連続の式より局所誘電率の3次元空間分布を求める定式化とプログラム開発を行った。 SiO2超薄膜と理想的なSiO2/Si(001)界面に酸素欠損を導入し、電子分極による光学誘電率、電子分極と格子分極による静的誘電率の3次元空間分布を調べた。欠陥近傍での光学誘電率の空間変化は小さいが、静的誘電率は欠陥近傍で増大することを見出した。 さらに、HfO2、La2O3等のイオン性の強いhigh-k超薄膜の誘電特性、Ge-MOSの酸化膜として期待されるGeO2超薄膜、GeO2/Ge(001)界面の局所誘電特性の計算を行った。GeO2酸化膜では、結晶構造の異なるquartz構造とrutile構造の2種類の薄膜を調べた。quartz構造薄膜は共有結合性が強く、quartz構造SiO2膜と類似の誘電特性を示す。イオン結合性の強いrutile構造薄膜はquartz構造より大きな静的誘電率を持ち、酸素欠損近傍での静的誘電率はさらに増大することを示した。 HfO2超薄膜の誘電特性の計算は論文にまとめ、J. Vac. Sci. Technol. Bに掲載された。GeO2超薄膜、GeO2/Ge(001)界面の局所誘電特性の研究成果は、"37^ Conf. on the Physics and Chemistry of Surfaces and Interfaces"で発表され、現在、論文を執筆中である。, 20035005
2008 - 2009

Atomic-scale dielectric properties at the interface between Si and La-based oxides
NAKAMURA Jun
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), The University of Electro-Communications, Grant-in-Aid for Scientific Research (C), 密度汎関数理論に基づく第一原理電子状態計算を用いて、La酸化物超薄膜単体およびLa酸化物とSi基板界面における原子レベル誘電特性、電子状態計算を行った。La酸化物表面においては、表面緩和により誘電率が著しく低下することがわかった。また、界面におけるバンドオフセットは、界面原子配列の詳細に大きく依存することがわかった。, 19560020
2007 - 2009

Mechanism of friction and superlubricity in nanometer-scale contacts
NATORI Akiko; JUN Nakamura
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), The University of Electro-Communications, Grant-in-Aid for Scientific Research (C), 摩擦力顕微鏡(FFM)が開発されて原子スケールでの摩擦力の観測が可能となり、ナノスケールのコンタクトの摩擦に対して巨視的な接触面での摩擦則が成立しないことが明らかになっている。本研究の目的は、ナノスケールコンタクトの摩擦機構を明らかにし、摩擦が消滅する超潤滑の出現機構と出現条件を解明することである。 FFMでの単針の運動をTomlinsonモデルを用いて調べ、以下のことがらを明らかにした。 (1)FFMで観測される摩擦力のスキャン速度飽和について、新たな機構を提唱した。 (2)単針先端が複数個の原子で構成される場合の摩擦機構を明らかにした。 (3)FFM単針を振動させながらスキャンしたときに観測される摩擦消失(動的超潤滑)の機構を明らかにした。, 18540313
2006 - 2008

ナノスケールSiO2/Si界面の電子状態と局所誘電特性に及ぼす欠陥の影響
名取 晃子; 中村 淳
日本学術振興会, 科学研究費助成事業 特定領域研究, 電気通信大学, 特定領域研究, 電界印加下の密度汎関数基底状態計算(B.Meyer et al,Phys.Rev.B 63(2001)205426)を用いて電界誘起面平均電荷密度を求め、ガウス則より局所内部電界を評価し、電束密度連続の式より局所誘電率を計算する定式化とプログラム開発を行った。 SiO_2超薄膜と理想的なSiO_2/Si(001)界面に適用し(S. Wakui et al.,in submission to J.Vac.Sci.Tech.B)、電子分極による光学誘電率、電子分極と格子分極の双方による静的誘電率の評価を行った。光学誘電率、静的誘電率共に、表面、界面近傍で急峻に変化することを見出した。さらに、SiO_2超薄膜と理想的なSiO_2/Si(001)界面に酸素空孔を導入し、欠陥が局所誘電率に与える影響を調べた。酸素空孔近傍で光学誘電率、静的誘電率双方に増大が見られた。光学誘電率増強は、酸素空孔に起因するSiタッグリングボンド準位がSiエネルギーギャップ中に現れることにより、電子分極が増大することによる。SiO_2超薄膜での静的誘電率増強には、酸素空孔によるSi原子層間隔の減少にも起因する。さらに、SiO_2超薄膜内のHf原子のSi原子置換により、静的誘電率が局所的に異常に大きく増大する現象を見出した(S.Wakui et al.,in submission to Appl.Phys.Lett.)。, 19026004
2007 - 2007

ナノメータ・スケール集積エレクトロニクスの理論的構築
名取 研二; 中村 淳; 佐野 伸行; 山部 紀久夫
日本学術振興会, 科学研究費助成事業 特定領域研究, 筑波大学, 特定領域研究, 1.昨年度に開発した、MOSFET中のキャリヤ輸送にフェルミ統計を考慮したモンテカルロ・シミュレーションにより、極微細MOSFETにおいて、バリステイックな電流やキャリヤ速度がフォノン散乱によって抑制される状況を解析した。 2.将来の有望な素子候補といわれる、ナノワイヤからなるFETの特性に関して、バリステイックなキャリヤ輸送の場合の電流電圧特性の一般公式を与えた。ナノワイヤの1次元バンド構造を与えれば、容易にFET特性を算出できる。これを用いて、ナノワイヤの性能極限などを議論できる。 3.MOSFETの閾値電圧の揺らぎの検討に関して。昨年度の深さ方向1次元の解析を、面内にそのようなカラムが束ねられているモデルに拡張して、チャネル内のキャリヤ伝導をカラム間のパーコレーションとして扱うシミュレーション・モデルを開発した。従来の大規模シミュレータのような計算コストが掛からない、3次元的な不純物位置情報を反映した、閾値電圧の標準偏差を知る強力なツールとなる可能性がある。 4.Siの(113)面上に、Geのナノワイヤが自己組織化的に成長する機構の解析に関して。昨年、第一原理計:算およびSTM観察の結果より、成長するGeの結晶構造がTPI&Rモデルといわれる構造であることを特定した。続いて、本年度はGe結晶の応力分布を算出し、結晶内の一方向にcompressiveなストレスが、またこれと直交する方向にtensileなストレスがかかっており、このストレス異方性が細長い島成長からワイヤ成長へと方向付けていることを明らかにした。ワイヤの自己組織化の有力な機構のひとつと見られる。 5.ナノスケール素子形成のための、シリコン面の制御法の検討。陽極酸化によりシリコン面に酸化膜フェンスで囲まれた領域を形成し、極低溶存酸素純水に依るエッチングで、領域内を完全にステップフリーとすることができた。また、シリコン面のテラス構造をCuを含む溶液に浸漬し、ステップに沿ったCu吸着によりCuナノワイヤを形成することができた。これらは、ナノスケールの素子構造形成の制御法の一つとして注目される。, 13025210
2001 - 2003

Atomistic tunnelig barrier of heteroepitaxial SiO_2/Si(001)
NATORI Akiko; NAKAMURA Jun
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), The University of Electro-Communications, Grant-in-Aid for Scientific Research (C), Energy dispersion relation and probability distribution of the Bloch function at the band edge were calculated for SiO2/Si(100) super-lattice structure, using the density functional first-principles calculation. From the band edge energy and the probability distribution of the Bloch function, novel evaluation method of valence band offsets are proposed. This method can be available even if the layer thickness of the super-lattice is very thin, although the conventional method is appropriate for thick layers. The following results have been obtained. (1) SiO2 layer thickness dependence of valence band offsets and corresponding penetration depth of a hole : The valence band offsets decreases as SiO2 layer thickness decreases, due to decrease of the energy gap of SiO2. The penetration depth of a hole gives a consistent result with the valence band offset (2) Si layer thickness dependence of valence band offsets and energy gap : The valence band offset decreases and the energy gap increases, as Si layer thickness decreases. This is due to quantum confinement effect in Si layer. (3) Carrier injection dependence of valence band offsets : The valence band offsets increases as electron concentration increases, although the valence band offset decreases as hole concentration increases. This is attributed to change of the electrostatic potential by carrier injection., 13640322
2001 - 2002

多摩科学技術高校模擬講義
Appearance, Visiting lecture
22 Nov. 2022 - 22 Nov. 2022

佐原高校模擬授業
Appearance, Visiting lecture
13 Jul. 2022 - 13 Jul. 2022

EAJジェンダーシンポジウム「イノベーションと多様性」
Appearance, 日本工学アカデミー, Seminar
06 May 2022 - 06 May 2022