KOBAYASHI TADAYUKI

Emeritus Professor etc.Emeritus Professor

Degree

  • 工学博士, 東北大学

Research Keyword

  • Electron device.
  • Josephson device
  • Superconducting oxide films
  • 電子デバイス
  • ジョセフソン効果素子
  • 高温超伝導酸化物薄膜

Field Of Study

  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering

Educational Background

  • Mar. 1978
    Tohoku University, Graduate School, Division of Engineering, 電気及び通信工学専攻
  • Mar. 1968
    The University of Electro-Communications, Faculty of Electro Communications, 電波通信学科・陸上通信専攻

Paper

  • Fabrication and Properties of the Variable Thickness Bridges with YBCO Thin Film
    Masataka Moriya; Atsushi Hashimoto; Yoshinao Mizugaki; Tadayuki Kobayashi
    Extended abstracts in 12th International Superconductive Electronics Conference, TD-P15, Jun. 2009, Peer-reviwed
    International conference proceedings, English
  • Magnetic Isolation Enhanced by the Meissner Effect of a Superconducting Loop in Multi-layered Nb Integrated Circuits.
    Yoshinao Mizugaki; Ryuta Kashiwa; Akio Kawai; Masataka Moriya; Tadayuki Kobayashi
    Proc. of Superconducting SFQ VLSI Workshop(SSV2009), p.9 O3, Jun. 2009, Peer-reviwed
    International conference proceedings, English
  • Mutial Inductance between Two Strip Lines Sanwitched by Two Ground Planes.
    Yoshinao Mizugaki; Akio Kawai; Ryuta Kashiwa; Masataka Moriya; Tadayuki Kobayashi
    Proc. of Superconducting SFQ VLSI Workshop(SSV2009), p.41 P3, Jun. 2009, Peer-reviwed
    International conference proceedings, English
  • Stacked-SQUID-based Voltage Multiplier Cell Generating Twofold or Fourfold Voltage
    Takeyuki Tanaka; Tadayuki Kobayashi; Masataka Moriya; Yoshinao Mizugaki; Masaki Maezawa
    Extended abstracts in 12th International Superconductive Electronics Conference, SP-P22, Jun. 2009, Peer-reviwed
    International conference proceedings, English
  • Design and Operation of 2n-fold Variable SFQ Pulse Number Multiplier.
    Jun Saito; Ryuta Kashiwa; Akio Kawai; Takeyuki Tanaka; Masataka Moriya; Tadayuki Kobayashi; Yoshinao Mizugaki; Masaki Maezawa
    Extended abstracts in 12th International Superconductive Electronics Conference, SP-P23, Jun. 2009, Peer-reviwed
    International conference proceedings, English
  • DAnalytical Calculation for Inductance of Superconducting Stripline.
    Yoshinao Mizugaki; Akio Kawai; Ryuta Kashiwa; Masataka Moriya; Tadayuki Kobayashi
    Extended abstracts in 12th International Superconductive Electronics Conference, SP-P28, Jun. 2009, Peer-reviwed
    International conference proceedings, English
  • Self organized Micro Cones on Si substrate by Microwave Plasma Chemical Vapor Deposition
    Masataka Moriya; Yuji Matsumoto; Yoshinao Mizugaki; Tadayuki Kobayashi; Koichi Usami
    Extended abstracts of the 2007 International Conference on Solid State Devices and Materials, P-8-17), pp.560-561, Sep. 2007, Peer-reviwed
    International conference proceedings, English
  • Planar intrinsic Josephson junctions with in-plane aligned YBCO films
    L Zhang; M Moriya; T Kobayashi; T Goto; M Mukaida
    SUPERCONDUCTOR SCIENCE & TECHNOLOGY, IOP PUBLISHING LTD, 15, 12, 1775-1777, Dec. 2002, Peer-reviwed, Planar type devices were fabricated by patterning in-plane aligned YBa2Cu3O7-delta (YBCO) films. The current-voltage characteristics along the c-axis at various temperatures and oxygen contents were measured. The current voltage curves showing supercurrent and hysteresis were obtained for the samples annealed at an oxygen pressure of 1.3 x 10(4) Pa, while the supercurrent and hysteresis became smaller and even disappeared as the oxygen pressure decreased. The relationships between the critical currents and temperatures are similar to those of d-wave superconducting tunnel junctions. These results indicate the formation of stacks of intrinsic Josephson junctions, which are useful for developing high-frequency electron devices.
    Scientific journal, English
  • Anisotropic superconducting properties and fabrication of submicrometre bridges in misaligned Bi-Sr-Ca-Cu-O (2212) films
    M Moriya; Y Koike; K Usami; T Goto; T Kobayashi
    SUPERCONDUCTOR SCIENCE & TECHNOLOGY, IOP PUBLISHING LTD, 15, 12, 1749-1752, Dec. 2002, Peer-reviwed, In this paper, we report on misaligned Bi-Sr-Ca-Cu-O (2212) films that have been deposited on vicinal strontium titanate substrates using a dc sputtering system. We measured the temperature dependences of resistivity across and along the terrace, and only the resistivity across the terrace slightly decreased with the increase of the temperature in the normal state region. The estimated anisotropy parameter y was smaller than that of single crystal, but a significant anisotropy was observed. Submicrometre bridges were fabricated, and the temperature dependence of the critical current density was investigated. The value of the critical current density across the terrace is smaller than the value of that along the terrace. This suggests that the current partially flows along the c-axis. However, a multi-branch structure was not observed even after post annealing in oxygen atmosphere at low pressure.
    Scientific journal, English
  • Anisotropic superconducting properties in misaligned BSCCO (2212) films
    M. Moriya; Y. Koike; K. Usami; T. Goto; T. Kobayashi
    The 8th IUMRS International conference on Electronic Materials, L-67, 461, Jun. 2002
    International conference proceedings, English
  • Planar intrinsic Josephson junctions with in-plane aligned YBCO films
    L. Zhang; M. Moriya; T. Kobayashi; T. Goto; M. Mukaida
    The 8th IUMRS International conference on Electronic Materials, 467, Jun. 2002
    International conference proceedings, English
  • Fabrication and properties of planar intrinsic Josephson junctions with in-plane aligned YBCO films
    L Zhang; M Moriya; T Kobayashi; M Mukaida; T Goto
    IEICE TRANSACTIONS ON ELECTRONICS, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E85C, 3, 764-768, Mar. 2002, Peer-reviwed, High-Tc superconductors convincingly showed that thee materials are essentially natural arrays of Josephson junctions formed in atomic scale. In this paper, in-plane aligned a-axis-oriented YBa2CU3O7-delta (YBCO) thin films were successfully grown on LaSrGaO4(LSGO) (100) substrates which were cleaned by ion-beam. Voltage jumps with hysteresis implying intrinsic Josephson effects arc, observed in c-axis direction. This re-tit suggest that it is to achieve planar intrinsic Josephson devices which have applications in high frequency electronics, such as voltage standards, Josephson masers and so on.
    Scientific journal, English
  • "Fabrication and properties of planar intrinsic Josephson junctions with in-plane aligned YBCO films"
    L.Zhang; M.Moriya; T.Kobayashi; T.Goto; M.Mukaida
    Extended abstracts of 8th International Superconductive Electronics Conference, 241-242, Jun. 2001
    International conference proceedings, English
  • Anisotropic properties of BSCCO (2212) films deposited on tilted substrates
    M Moriya; T Sudoh; Y Koike; K Usami; T Kobayashi; T Goto
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 11, 1, 2700-2702, Mar. 2001, Peer-reviwed, Intrinsic Josephson junctions with single crystals or thin films of high-Tc superconductor have been studied. For this purpose, BiSrCaCuO (2212) films have been deposited on tilted strontium titanate substrates using a de sputtering system. Superconducting and structural properties of these films have already been reported in II]. In the present study, the surface morphology of films deposited on the tilted substrates is investigated by Atomic Force Microscopy, Many steps and terraces are seen in the film on the tilted substrate. Furthermore, two more films, prepared on the tilted substrates simultaneously are subjected to resistivity measurements across and along the terraces, respectively. The anisotropy parameter gamma,((ratio of resistivity measured along the c-axis and the a-axis)<^>0.5), calculated from the resistivity measurement is found to be of the order of 50 in the films. A semiconductor-like behavior has been observed above the critical temperature in the temperature - resistivity characteristics, across the terraces.
    Scientific journal, English
  • a軸配向YBCO薄膜を用いた積層構造トンネル接合の作製とその特性の評価
    姜 友松; 小林忠行; 後藤俊成
    電子情報通信学会論文誌C, The Institute of Electronics, Information and Communication Engineers, J84-C, 2, 151-156, Feb. 2001, Peer-reviwed, a軸配向YBa_2Cu_3O<7-δ>(YBCO)薄膜を用いた積層型SIS接合を作製しその特性を検討した.PrGaO_3(PGO)とCeO_2の2層バリア構造を用いることが電気的短絡を防ぐことに有効であることがわかった.バリアPGO50ÅとCeO225ÅのSIS接合でジョセフソン電流が観測されたが, 臨界電流と接合抵抗の温度依存性はSIS接合よりSNS接合に近いものであった.下部電極YBCO膜の表面をイオンビームクリーニングした接合はヒステリシス電流を有する電圧-電流特性を示し, 臨界電流と接合抵抗を考察した結果, ジョセフソン電流はトンネル効果によることが明らかになった.
    Scientific journal, Japanese
  • 傾斜基板上に堆積したBi系超伝導薄膜の特性
    守屋雅隆; 岡本尚志; 須藤貴之; 小池優作; 宇佐美興一; 後藤俊成; 小林忠行
    電気通信大学紀要, 電気通信大学, 13, 2, 187-190, Jan. 2001
    Research institution, Japanese
  • Alの陽極酸化膜を用いたMIMトンネルエミッタの作製
    宇佐美興一; 浜田顕徳; 守屋雅隆; 小林忠行; 後藤俊成
    電気通信大学紀要, 電気通信大学, 13, 2, 191-194, Jan. 2001
    Research institution, Japanese
  • Properties of Trilayer SIS Junctions with YBa_2_Cu_3_O_7-y_
    You-Song Jiang; Masataka Moriya; Tadayuki Kobayashi; Toshinari Goto
    IEEE Trans. on Appl. Superconductivity, 11, 1, 505-508, 2001, Peer-reviwed
    Scientific journal, English
  • Josephson effects in a-axis oriented YBa_2_Cu_3_O_7-y_ SIS tunnel jucntions with double layer barrier
    Y. S. Jiang; T. Kobayashi; T. Goto
    Physica C, 341-348, 2741-2742, Nov. 2000, Peer-reviwed
    Scientific journal, English
  • Growth of a-axis Oriented YBa_2_Cu_3_O_7-δ_ Films on Ion-Beam Cleaned LaSrGaO_4_ Substrates
    T.Goto; S.Takekawa; M.Moriya; K.Usami; T.Kobayashi
    Physica C, 341-348, 2373-2374, Nov. 2000, Peer-reviwed
    Scientific journal, English
  • Anisotropic properties of BSCCO(2212)films deposited on tilted substrates
    M. Moriya; T. Sudoh; Y. Koike; K. Usami; T. Goto; T. Kobayashi
    Applied superconductivity conference 2000, 1MA02, 171, Sep. 2000
    English
  • Growth conditions and superconductive properties of a-axis oriented YBa_2_Cu_3_O_7_ films on LaSrGaO_4_ substrates
    T. Goto; S. Takekawa; L.Zhang; M. Moriya; T. Kobayashi
    Applied superconductivity conference 2000, 1MJ06, 180, Sep. 2000
    English
  • Properties of trilayer SIS junction with YBa_2_Cu_3_O_7-y_
    Y. S. Jiang; M. Moriya; T. Kobayashi; T. Goto
    Applied superconductivity conference 2000, 2EH08, 80, Sep. 2000
    English
  • Growth of a-axis Oriented YBa2Cu3O7-δ Films on Ion-Beam Cleaned LaSrGaO4 Substrates
    T. Goto; S. Takekawa; M. Moriya; K. Usami; T. Kobayashi
    6th International Conference on Materials and Mechnisms of Superconductivity -High-Temperature Superconductors(M^2^S-HTSC-Ⅵ), IP04-37, 122, Feb. 2000
    International conference proceedings, English
  • Josephson Effects in a-axis Oriented YBa_2_Cu_3_O_7-σ_ SIS Tunnel Junctions with Double Layer Barrier
    Y. S. Jiang; T. Kobayashi; T. Goto
    6th International Conference on Materials and Mechnisms of Superconductivity - High-Temperature Superconductors(M^2^S-HTSC-Ⅵ), IP09-69, 492, Feb. 2000
    International conference proceedings, English
  • Siのプラズマ酸化膜を用いたMIS型トンネルエミッタの作製
    宇佐美興一; 三宅栄太郎; 守屋雅隆; 小林忠行; 後藤俊成
    電気通信大学紀要, 12, 135-139, Nov. 1999
    Research institution, Japanese
  • Preparation of Thin Al Oxide Films by Anodizing for MIM Type tunnel Emiter
    K. Usami; A. Hamada; M. Moriya; T. Kobayashi; T. Goto
    Proceedings of First Vacuum and Surface Sciences Conference of Asia and Australia, AA-1174, Sep. 1999
    International conference proceedings, English
  • Preparation of a-axis oriented YBCO film on CeO2 buffered sapphire substrate(共著)
    Y. S. Jiang; T. Kobayashi; T. Goto
    IEEE Trans. on Applied Superconductivity, 9, 2, 1657, Jun. 1999, Peer-reviwed
    Scientific journal, English
  • Preparation of YBCO films on sapphire with CeO2 deposited by ion beam sputtering
    T Goto; T Kuji; YS Jiang; M Moriya; K Usami; T Kobayashi
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 9, 2, 1653-1656, Jun. 1999, Peer-reviwed, Although sapphire has superior high frequency properties, an adequate buffer layer is required to form a high-Tc film. We deposited a CeO2 buffer layer by ion beam sputtering in high oxygen pressure, and investigated the influence of the deposition conditions on the superconducting properties of YBa2Cu3O7-y(YBCO) films. CeO2 films deposited at higher than 600 degrees C were c-axis oriented and YBCO films deposited on the top at 700 degrees C were also c-axis oriented. T-ce(R=0) = 89K and J(c) > 10(6)A/cm(2) were obtained for a 120nm thick YBCO film deposited on 50nm thick CeO2 layer. High oxygen pressure similar to 1Pa is desirable. Grain boundary Josephson junctions were also successfully fabricated on bicrystal sapphire substrate. It was found that high pressure ion beam sputtering is a promising method for superconductive electron devices.
    Scientific journal, English
  • Properties of Bi-Sr-Ca-Cu-O(2212) films deposited by sputtering on tilted substrates
    M Moriya; T Okamoto; K Usami; T Kobayashi; T Goto
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 9, 2, 2380-2382, Jun. 1999, Peer-reviwed, Bi-Sr-Ca-Cu-O(2212) thin films have been deposited on tilted SrTiO3 substrates using a de sputtering system. Those films have been deposited at 710-790 degrees C. Thickness of these films is about 170nm, The films deposited at 730, 750 and 770 degrees C have exhibited superconductivity, and the highest value of critical temperature is about 70K for the film deposited at 750 degrees C. The crystal structure of this film has also been investigated by a X-ray diffraction with c-axis oriented 2212 phase.
    Scientific journal, English
  • Preparation of YBCO Films on Sapphire with ceria deposited by ion beam
    T Goto; T. Kuji; M. Moriya; K. Usami; T. Kobayashi
    1998 Applied Superconductivity Conference, MDC-09, Sep. 1998
    International conference proceedings, English
  • Preparation of a-axis oriented YBCO films on buffered sapphire substrate
    Y. S. Jiang; T. Kobayashi; T. Goto
    1998 Applied Superconductivity Conference, MDC-10, Sep. 1998
    International conference proceedings, English
  • BSCCO(2212)films deposited by sputtering on tilted substrates
    M. Moriya; T. Okamoto; K. Usami; T. Goto; T. Kobayashi
    1998 Applied Superconductivity Conference, MOD-05, Sep. 1998
    International conference proceedings, English
  • Properties of the junctions using YBCO/STO(PGO) layer. (共著)
    Exfended Abstracts of 1996 International Workshop on Superconductivity, P0-22, 1996
    International conference proceedings, English
  • CHARACTERISTICS OF A NIO BARRIER LAYER FOR HIGH-TC SUPERCONDUCTING TUNNEL JUNCTION
    M MORIYA; T KOBAYASHI; T GOTO
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 5, 2, 2358-2360, Jun. 1995, Peer-reviwed, Characteristics of a NiO barrier layer for high-Tc superconducting tunnel junctions were investigated. Bi2Sr2CaCu2Ox (BSCCO) films were deposited on a MgO or SrTiO3 substrate using a dc hollow cathode sputtering system. In situ superconducting BSCCO films deposited in Ar + 20% O-2 gas at Ts = 680 degrees C on a MgO substrate were c-axis oriented 2212 phase. A NiO layer was formed by reactive sputtering in Ar + 20%O-2 gas using a Ni hollow cathode, and the layer on the BSCCO film was of (100) and (110) orientation.
    The current-voltage characteristics of an Ag/NiO/BSCCO junction with a NiO barrier layer 5nm thick were investigated. In the G-V curves of some junctions, a zero bias conductance peak was observed. It is assumed that this behavior is probably due to the nonuniform thickness of the barrier layer. The junction with a thicker barrier layer (18nm) showed tunnel current characteristics without anomaly.
    Scientific journal, English
  • Properties of Sandwich type SIN Junctions using a-axis oriented Y-Ba-Cu-O films. (共著)
    Extended Abstracts of ISEC'95, 123, 1995
    International conference proceedings, English
  • Preparation and properties of YBCO tunnel junction by ion beam sputtering. (共著)
    X.Y.Cai; T.Namai; K.Usami; T.Kobayashi; T.Goto
    IEEE Trans. on Applied Superconductivity, 5, 2, 2385-2387, 1995, Peer-reviwed
    Scientific journal, English
  • Millimeter wave responses of YBCO variable-thickness bridges. (共著)
    C.H.Park; T.Kobayashi; T.Goto
    IEEE Transactions on Applied Superconductivity, 3, 1, 2409-2412, 1993, Peer-reviwed
    Scientific journal, English
  • Properties of bridge type weak link device with YBCO thin film. (共著)
    朴賛勲; 小林忠行; 後藤俊成
    The transactions of the institute of electronics, information and communication engineers., The Institute of Electronics, Information and Communication Engineers, J76-C-II, 2, 74-79, 1993, 膜の作製には化学量論的な123組成のターゲットを用いてDCホロー陰極スパッタ法によって研磨したMaO(100)基板上に厚さ100-300nm程度のYBCO膜を堆積させる.スパッタガスAr+5%O_2,スパッタガス圧820mTorr,基板温度700℃でTczero=87Kのc軸配向膜が得られた.本研究は結晶粒界を用いない,ブリッジ部を局部的に薄くした膜厚変化形ブリッジ(VTB)素子の実現を目的としている.今回我々は,ホトリソグラフィとAlの斜め蒸着と低エネルギーイオンビームエッチングを用いて85-410nmの微細加工を行いVTB素子を作製し,マイクロ波(9.67GHz)およびミリ波(94GHz)を印加する実験を行った結果,ミリ波まで応答することが明らかになった.
    Scientific journal, Japanese
  • Fabrication and properties of high Tc superconductor tunnel junctions using Organic film as a barrier. (共著)
    岡部寛; 守屋雅隆; 宇佐美興一; 小林忠行; 後藤俊成
    The transactions of the institute of electronics, information and communication engineers., The Institute of Electronics, Information and Communication Engineers, J76-C-II, 6, 385-390, 1993, 本研究では有機物ヘキサメチルジシラン(Hexamethyldisilane:HMDS)を用いることにより,酸化物高温超伝導体/HMDS/金属超伝導体接合を作製した.初めにYBCO薄膜を直流ホロー陰極スパッタ法,またはrf off-axisスパッタ法により成膜し,続いてHMDSを膜に吸着させた.HMDSは吸着させた場合1分子層(1nm程度)の膜を形成する.その後,対向電極としてPb(T_c=7.2K)を蒸着した.このようにして作製したトンネル接合の電流-電圧特性を測定した結果,エネルギーギャップ構造とジョセフソン電流が観測された.また,このジョセフソン電流のマイクロ波応答と磁界依存性を観測した.
    Scientific journal, Japanese
  • Influence of sputtering conditions on the characteristics of superconducting Y-Ba-Cu-O films. (共著)
    T.Kobayashi; S.Eto; Y.Kato; K.Usami; T.Goto
    Japanese Journal of Applied Physics., 32, 7, 3150-3153, 1993, Peer-reviwed
    Scientific journal, English
  • Fabrication of YBa2Cu3O7-x-PrBa2Cu3O7-y heterostructures by using a hollow cathocle sputtering system. (共著)
    A.Kawabata; T.Kobayashi; K.Usami; T.Goto
    IEICE transactions on Electronics, E76-C, 8, 1236-1240, 1993, Peer-reviwed
    Scientific journal, English
  • CHARACTERISTICS OF A SPUTTERED Y-BA-CU-O THIN-FILM DC SUPERCONDUCTING QUANTUM INTERFERENCE DEVICE PREPARED BY RF-SPUTTERING
    T GOTO; XB YING; CH PARK; Y TAKEDA; K USAMI; T KOBAYASHI
    JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 70, 3, 1856-1857, Aug. 1991, Peer-reviwed, A dc superconducting quantum interference device (SQUID) is fabricated on an amorphous Y-Ba-Cu-O film by a photolithographic technique and successive post-annealing treatment. The SQUID shows periodic and symmetric behavior in the voltage versus magnetic-flux curves (V-PHI curves). No multiple periodicities are observed. The transfer function partial-V/partial-PHI for output voltage is about 90 20-mu-V/PHI-0 at 4.2 and 56 K, respectively. It is expected that the SQUID contains only two symmetric active Josephson junctions.
    Scientific journal, English
  • The Preparation and Properties of In Situ Grown Y-Ba-Cu-O Thin Films by RF Magnetron Sputtering with a DC Biased Substrate Holder using a Mosaic Target
    Tadayuki Kobayashi; Satoshi Eto; Kouichi Usami; Toshinari Goto
    Shinku, 34, 6, 540-546, 1991, Peer-reviwed, In situ grown superconducting Y-Ba-Cu-O films were deposited on a MgO substrate by rf sputtering with dc biased substrate holder using a mosaic YBaxCuyOz target, which was composed of 9 pieces of ceramic of a nominal composition of x = 2, 4, 6, and y = 3, 5, 7. The films were deposited at a substrate temperature Ts of 660°C and at various substrate holder voltages VH. After deposition, the films were immediately cooled in the chamber vented with 400 Torr of oxygen. The dependence of the critical temperature on the substrate position was investigated. The critical temperature higher than 70K was obtained at the substrate position above the target composition of x = 2–6 and y = 3–5 for VH = −80 V to −120 V. The deposition rate at finite negative holder voltage was higher than that at zero holder voltage. It was shown that the film composition approached to the target composition by the substrate holder negative voltage. The film with short c-lattice parameter showed high Tc, but the shortest one was somewhat longer than the bulk value. © 1991, The Vacuum Society of Japan. All rights reserved.
    Scientific journal, English
  • Preparation and properties of Y-Ba-Cu-O thin films by rf magnetron sputtering with a dc biased substrate holder. (共著)
    S.Eto; T.Kobayashi; K.Usami; T.Goto
    The transactions of the institute of electronics, information and communication engineers., E74, 1949-1954, 1991
    Scientific journal, English
  • Bi(-Pb)-Sr-Ca-Cu-O films prepared by dc sputtering with mosaic target. (共著)
    T.Kobayashi; M.Moriya; K.Usami; T.Goto; X.Ying; M.Hatanaka
    The transactions of the institute of electronics, information and communications engineers., E72, 10, 1072-1074, 1989
    Scientific journal, English
  • Constant-voltage steps in the V-I curve of a J-J loop. (共著)
    S.Takeuchi; H.Narita; T.Kobayashi; K.Hamasaki; S.Yoshikawa; T.Yamashita
    Japanese Journal of Applied Physics., 24, 12, 1627-1631, 1985, Peer-reviwed
    Scientific journal, English
  • Rf induced steps in the V-I characteristics of a superconducting closed loop formed from 2N-Josephson junctions. (共著)
    K.Takanaka; T.Kobayashi; T.Yamashita
    Japanese Journal of Applied Physics., 23, 9, 1216-1222, 1984, Peer-reviwed
    Scientific journal, English
  • COHERENT BEHAVIOR OF 2N-JOSEPHSON JUNCTION CLOSED-LOOP
    T KOBAYASHI; K HAMASAKI; N KONDOH; T KOMATA; T YAMASHITA
    APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 42, 5, 475-476, 1983, Peer-reviwed
    Scientific journal, English
  • Coherent characteristics of superconducting closed loop composed of Josephson Junctions.
    小林忠行; 近藤信義; 浜崎勝義; 山下努
    The transactions of the institute of electronics and communication engineers of Japan., J66-C, 9, 660-667, 1983, Peer-reviwed
    Scientific journal, Japanese
  • Cross-shaped proximity-effect bridge. (共著)
    T.Kobayashi; K.Najima; T.Yamashita; Y.Onodera
    Applied Physics Letters., 34, 10, 1707-708, 1979, Peer-reviwed
    Scientific journal, English
  • Properties of cross-shaped proximity effect weak link device. (共著)
    T.Kobayashi; T.Yamashita; Y.Onodera
    Japanese Journal of Applied Physics., Supple18-1, 195-200, 1979, Peer-reviwed
    Scientific journal, English

Lectures, oral presentations, etc.

  • a軸配向YBCO薄膜を用いた膜厚変化形ブリッジの作製Ⅲ
    橋本篤士; 丸山伸伍; 守屋雅隆; 水柿義直; 宇佐美興一; 小林忠行
    Oral presentation, Japanese, 応用物理学会,2008年春季第55回応用物理学関係連合講演会 講演予稿集(第1分冊)
    Mar. 2008
  • a軸配向NdBa2Cu3Oy薄膜を用いた膜厚変化形ブリッジの作製II
    吉澤延之; 丸山伸伍; 守屋雅隆; 水柿義直; 宇佐美興一; 小林忠行
    Oral presentation, Japanese, 応用物理学会,2007年春季第54回応用物理学関係連合講演会 講演予稿集(第1分冊)
    Mar. 2007
  • c軸配向NdBa2Cu3Oy薄膜を用いた膜厚変化形ブリッジの試作
    常盤貴彦; 丸山伸伍; 守屋雅隆; 水柿義直; 宇佐美興一; 小林忠行
    Oral presentation, Japanese, 応用物理学会,2007年春季第54回応用物理学関係連合講演会 講演予稿集(第1分冊)
    Mar. 2007
  • Bi2Sr2CaCu2Oy超電導薄膜を用いたランプエッジ接合のの作製
    前嶋一利; 守屋雅隆; 水柿義直; 宇佐美興一; 小林忠行
    Oral presentation, Japanese, 応用物理学会,2007年春季第54回応用物理学関係連合講演会 講演予稿集(第1分冊)
    Mar. 2007
  • a軸配向NdBa2Cu3Oy下部電極を用いたランプエッジ接合の電気的特性
    平塚雅; 守屋雅隆; 水柿義直; 宇佐美興一; 小林忠行
    Oral presentation, Japanese, 低温工学・超伝導学会,2006年度秋季低温工学・超伝導学会講演会講演予稿集
    Nov. 2006
  • a軸配向YBCO薄膜を用いた膜厚変化形ブリッジの作製II
    江飛; 影山尚人; 守屋雅隆; 水柿義直; 宇佐美興一; 小林忠行
    Oral presentation, Japanese, 応用物理学会,2006年度春季第53回応用物理学関係連合講演会 講演予稿集(第1分冊)
    Mar. 2006
  • a軸配向NBCO薄膜を用いた膜厚変化形素子の作製1
    大河勇樹; 常盤貴彦; 守屋雅隆; 水柿義直; 宇佐美興一; 小林忠行
    Oral presentation, Japanese, 低温工学・超伝導学会,第73回2005年度秋季低温工学・超伝導学会講演会講演予稿集
    Nov. 2005
  • 超伝導薄膜で磁気分離されたストリップライン間の相互インダクタンス
    水柿義直; 波木井秀充; 守屋雅隆; 宇佐美興一; 小林忠行
    Oral presentation, Japanese, 電子情報通信学会,超伝導エレクトロニクス研究会 信学技報
    Oct. 2005
  • a軸配向YBCO薄膜を用いた膜厚変化形ブリッジの作製I
    石田将崇; 江 飛; 守屋雅隆; 水柿義直; 宇佐美興一; 小林忠行
    Oral presentation, Japanese, 第52回応用物理学関係連合講演会講演予稿集第一分冊
    Mar. 2005
  • サファイア基板上に作製したMIMトンネルエミッタの特性
    中村太陽; 宇佐美興一; 守屋雅隆; 水柿義直; 小林忠行; 後藤俊成
    Oral presentation, Japanese, 第45回真空に関する連合講演会講演予稿集
    Oct. 2004
  • 基板バイアスMPCVD法によるダイヤモンド薄膜からの電界電子放出特性(Ⅱ)
    新妻和典; 宇佐美興一; 守屋雅隆; 水柿義直; 小林忠行; 後藤俊成; 湯郷成美
    Oral presentation, Japanese, 第65回応用物理学会学術講演会講演予稿集第二分冊
    Sep. 2004
  • SiのRFプラズマ酸化膜の形成とMIS形トンネルエミッタへの応用(Ⅱ)
    萩生貴文; 家田義紀; 小山勇作; 宇佐美興一; 守屋雅隆; 水柿義直; 小林忠行; 後藤俊成
    Oral presentation, Japanese, 第65回応用物理学学術講演会講演予稿集第二分冊
    Sep. 2004
  • 直流スパッタリング法で傾斜SrTiO3基板上に堆積したBi系超伝導薄膜の特性
    守屋雅隆; 後藤俊成; 宇佐美興一; 水柿義直; 小林忠行
    Oral presentation, Japanese, 第64回応用物理学会学術講演会予稿集第一分冊
    Sep. 2003
  • サファイア基板上に作製したMIMトンネル素子の特性2
    市川弘毅; 岡田創; 宇佐美興一; 守屋雅隆; 水柿義直; 小林忠行; 後藤俊成
    Oral presentation, Japanese, 第64回応用物理学会学術講演会予稿集第二分冊
    Sep. 2003
  • 基板バイアスMPCVD法によるダイヤモンド薄膜からの電解電子放出特性(Ⅰ)
    新妻和典; 宇佐美興一; 守屋雅隆; 水柿義直; 小林忠行; 後藤俊成; 湯郷成美
    Oral presentation, Japanese, 第64回応用物理学会学術講演会予稿集第二分冊
    Sep. 2003
  • サファイア基板上に作製したMIMトンネル素子の特性
    市川弘殻; 岡田創; 宇佐美興一; 守屋雅隆; 小林忠行; 後藤俊成
    Oral presentation, Japanese, 第63回応用物理学会講演会
    Jun. 2002
  • サファイア基板を用いた高温超伝導ブリッジ素子の形成[Ⅱ]
    柴原輝; 田中智典; 守屋雅隆; 宇佐美興一; 小林忠行; 後藤俊成
    Oral presentation, Japanese, 第49回応用物理学関係連合講演会講演予稿集第一分冊
    Mar. 2002
  • 基板バイアスマイクロ波CVD法によるダイヤモンド薄膜からの電子放出
    加茂謙介; 宇佐美興一; 守屋雅隆; 小林忠行; 後藤俊成
    Oral presentation, Japanese, 第62回応用物理学会学術講演会
    Sep. 2001
  • 三軸配向YBCO膜によるイントリンジックジョセフソン接合の形成
    張 蘭; 竹川 智; 守屋雅隆; 小林忠行; 後藤俊成
    Others, Japanese, 信学技報
    Oct. 2000
  • サファイア基板を用いた高温超伝導ブリッジ素子の形成(Ⅰ)
    田中智典; 柴原 輝; 守屋雅隆; 宇佐美興一; 小林忠行; 後藤俊成
    Oral presentation, Japanese, 第61回応用物理学会 学術講演会講演予稿集,第1分冊
    Sep. 2000
  • Co-PBCOを用いた積層型ジョセフソン接合の製作
    廣瀬 司; 守屋雅隆; 宇佐美興一; 小林忠行; 後藤俊成
    Oral presentation, Japanese, 第61回応用物理学会学術講演会講演予稿集,第1分冊
    Sep. 2000
  • 2層バリアを持つ積層構造SISトンネル接合の製作とその特性評価
    姜 友松; 守屋雅隆; 宇佐美興一; 小林忠行; 後藤俊成
    Oral presentation, Japanese, 第61回応用物理学会学術講演会講演予稿集,第1分冊
    Sep. 2000
  • イオンエッチングを用いた面内配向YBa_2_Cu_3_O_7-y_薄膜の作製と評価
    張 蘭; 竹川 智; 守屋雅隆; 宇佐美興一; 小林忠行; 後藤俊成
    Oral presentation, Japanese, 第61回応用物理学会学術講演会講演予稿集,第1分冊
    Sep. 2000
  • 基板バイアスマイクロ波CVD法ダイヤモンド薄膜からの電子放出
    宇佐美興一; 加茂謙介; 守屋雅隆; 小林忠行; 後藤俊成
    Oral presentation, Japanese, 第61回応用物理学会学術講演会
    Sep. 2000
  • Al陽極酸化膜の形成とMIM素子への応用に関する研究
    浜田顕徳; 中村 開; 守屋雅隆; 宇佐美興一; 小林忠行; 後藤俊成
    Oral presentation, Japanese, 第47回応用物理学関係連合講演会予稿集,第2分冊
    Mar. 2000
  • Bi系傾斜薄膜の作製
    守屋雅隆; 岡本尚志; 後藤俊成; 小林忠行
    Oral presentation, Japanese, 第61回1999年度秋季低温工学・超電導学会講演概要集
    Nov. 1999
  • サファイア基板上への高温超伝導弱結合素子形成
    定村周明; 張 蘭; 守屋雅隆; 宇佐美興一; 小林忠行; 後藤俊成
    Oral presentation, Japanese, 第61回1999年度秋季低温工学・超電導学会講演概要集
    Nov. 1999
  • イオンビームスパッタCeO_2_をバッファー層とするサファイア基板上に形成したYBCO薄膜の配向性制御
    姜 友松; 久慈宝人; 守屋雅隆; 宇佐美興一; 小林忠行; 後藤俊成
    Others, Japanese, 信学技報
    Jul. 1998

Affiliated academic society

  • 応用物理学会
  • 電子情報通信学会