ものづくり技術（機械・電気電子・化学工学）, 電気電子材料工学

2018年09月 - 2021年08月
九州大学, Department of Applied Science for Electronics and Materials, Laser Induced Conductive Layers Formation and Surface-Structural Modification on Diamond for Optoelectronic Devices Fabrication, Ph.D. in Material Sciences and Electrical Engineering, 日本国

2016年10月 - 2018年09月
九州大学, Department of Applied Sci. for Elec. and Mat., Kyushu University, Fukuoka, Application of laser irradiation on ultrananocrystalline diamond/ hydrogenated amorphous carbon composite films Fabricated by Coaxial Arc Plasma Deposition, M.Sc. in Electrical Engineering and Material Science, 日本国

2012年09月 - 2013年07月
Aswan University, Electronic & Communication Dep., Faculty of Engineering, Solid State Electronics, Design of Digital Integrated Circuits, Renewable Energy Systems, Electronic circuits, and Microwave Electronic Devices, Preliminary Master’s Degree, エジプト・アラブ共和国

2006年09月 - 2011年07月
Aswan University, Elec. & Comm. Dep., Faculty of Engineering, Aswan University, B.Sc. in Electrical Engineering, B.Sc. in Electrical Engineering, エジプト・アラブ共和国

受賞日 2020年
九州大学
Overseas Scientific Activity Grant

受賞日 2019年
JSAP Kyushu Chapter
The 4th Asian Applied Physics Conference (Asian APC), oral presentation, Nov. 2019.
Best Presentation AWARD

受賞日 2016年
Kyushu University
Kyushu University Program for Leading Graduate Schools • Full 5 years Scholarship granted for Master / Doctorate degree study at Kyushu University, 2016. • Financial support for international exchange research, Dec. 2018, Institute Neel, France / Hasselt Univ., Belgium, Mar. - June 2019., Eslam Abubakr

受賞日 2011年
• Undergraduate monetary for academic excellence, Aswan University, 2007-2011. (Ranked as Top First of the Electronic & Communication Dep.).

Au–Si Diffusion Effects on Surface Plasmon Resonance Sensor Using Internal Photoemission at Metal/Si Schottky Barrier
Masaya Ukaji; Eslam Abubakr; Yuki Imai; Tetsuo Kan
ACS Omega, 出版日 2025年11月25日
研究論文（学術雑誌）

Modifying interface properties for advanced self-powered refractory NIR plasmonic photodetection and broadband spectroscopy
Eslam Abubakr; Ashenafi Abadi; Shiro Saito; Hironori Suzuki; Tetsuo Kan
Materials Science in Semiconductor Processing, 出版日 2025年10月
研究論文（学術雑誌）

Advanced self-powered NIR plasmonic photodetection and photoelectron spectroscopy
Eslam Abubakr; Shiro Saito; Hironori Suzuki; Tetsuo Kan
MRS Communications, 出版日 2025年09月09日
研究論文（学術雑誌）

Study on Temperature-Dependent Photoresponsivity and Stability of Mid-Infrared Photodetector Based on Si-Process-Compatible Plasmonic PtSi/p-Si Schottky Structure
Ashenafi Abadi Elyas; Eslam Abubakr; Daiji Noda; Ryo Ohta; Tetsuo Kan
Journal of Electronic Materials, Springer Science and Business Media LLC, 出版日 2025年03月17日
研究論文（学術雑誌）

Advanced Room-Temperature NIR Plasmonic Photodetection and Reconstructive Spectroscopy
Eslam Abubakr; Ashenafi Abadi; Masaaki Oshita; Shiro Saito; Hironori Suzuki; Tetsuo Kan
IEEE Transactions on Electron Devices, 出版日 2025年01月
研究論文（学術雑誌）

レーザー照射による単結晶ダイヤモンド上への導電層の形成
吉武 剛; アブバクル エスラム; ゼクリア アブデルラーマン; 片宗 優貴; 大曲 新矢; 妹川 要; 池上 浩
応用物理学会学術講演会講演予稿集, 公益社団法人 応用物理学会, 2019.2巻, 掲載ページ 1425-1425, 出版日 2019年09月04日
日本語

Optimizing geometry and metal-dependent performance of Si-based Schottky plasmonic photodetectors
Eslam Abubakr; Ashenafi Abadi; Masaaki Oshita; Shiro Saito; Tetsuo Kan
出版日 2024年04月, Optical Materials, 155118529

Characterization of an uncooled mid-infrared Schottky photodetector based on a 2D Au/PtSi/p-Si nanohole array at a higher light modulation frequency
Ashenafi Abadi; Eslam Abubakr; Masaaki Oshita; Daiji Noda; Ryo Ohta; Tetsuo Kan
出版日 2024年03月10日, Applied Optics, 154641670

Nanocarbon ohmic electrodes fabricated by coaxial arc plasma deposition for phosphorus-doped diamond electronics application
Sreenath Mylo Valappil; Shinya Ohmagari; Abdelrahman Zkria; Phongsaphak Sittimart; Eslam Abubakr; Hiromitsu Kato; Tsuyoshi Yoshitake
出版日 2022年08月01日, AIP Advances, 117064327

Formation of p-n⁺ diamond homojunctions by shallow doping of phosphorus through liquid emersion excimer laser irradiation
ESLAM ABUBAKR
Informa {UK} Limited, 出版日 2022年06月06日, Materials Research Letters, 10巻, 10号, 掲載ページ 666-674, 英語, 2166-3831, 114266486

Correlated Electrical Conductivities to Chemical Configurations of Nitrogenated Nanocrystalline Diamond Films
Abdelrahman Zkria; Hiroki Gima; Eslam Abubakr; Ashraf Mahmoud; Ariful Haque; Tsuyoshi Yoshitake
出版日 2022年03月03日, Nanomaterials, 109188393

Laser-induced novel ohmic contact formation for effective charge collection in diamond detectors
Eslam Abubakr; Shinya Ohmagari; Abdelrahman Zkria; Hiroshi Ikenoue; Tsuyoshi Yoshitake
Elsevier {BV}, 出版日 2022年03月, Materials Science in Semiconductor Processing, 139巻, 掲載ページ 106370-106370, 104194452

Diode Parameters and Equivalent Electrical Circuit Model of n-Type Silicon/B-Doped p-Type Ultrananocrystalline Diamond Heterojunctions Manufactured Through Coaxial Arc Plasma Deposition
ESLAM ABUBAKR
Coaxial arc plasma deposition (CAPD) was employed to manufacture n-type silicon/boron-doped p-type ultrananocrystalline diamond heterojunctions. Measurement and analysis of their dark current density-voltage curve were carried out at room temperature in order to calculate the requisite
junction parameters using the Cheung and Norde approaches. For the calculation based on the Cheung approach, the series resistance (Rs), ideality factor (n) and barrier height (Φb) were 4.58 kΩ, 2.82 and 0.75 eV, respectively. The values
of Rs and Φb were in agreement with those calculated using the Norde approach. Their characteristics for alternative current impedance at different frequency values were measured and analyzed as a function of the voltage (V) values ranging from 0 V
to 0.5 V. Appearance of the real (Z′) and imaginary (Z″) characteristics for all V values presented single semicircles. The centers of the semicircular curves were below the Z′ axis and the diameter of the semicircles decreased with increments
of the V value. The proper equivalent electrical circuit model for the manufactured heterojunction behavior was comprised of Rs combined with the parallel circuit of resistance and constant phase element., 出版日 2020年08月01日, Journal of Nanoscience and Nanotechnology, 英語, 1533-4880, 77544542

Impedance spectroscopy analysis of n-type (nitrogen-doped) ultrananocrystalline diamond/p-type Si heterojunction diodes
Zkria, A.; Shaban, M.; Abubakr, E.; Yoshitake, T.
{IOP} Publishing, 出版日 2020年, Physica Scripta, 95巻, 9号, 英語, 1402-4896, 100583705, 85090385893

Structural evolution of laser-irradiated ultrananocrystalline diamond/amorphous carbon composite films prepared by coaxial arc plasma
Zkria, A.; Abubakr, E.; Egiza, M.; Haque, A.; Narayan, J.; Yoshitake, T.
{IOP} Publishing, 出版日 2020年, Applied Physics Express, 13巻, 10号, 英語, 1882-0786, 100583706, 85092559518

Analysis of Electrical Characteristics of Pd/ n -Nanocarbon/ p -Si Heterojunction Diodes: By C - V - f and G / w - V - f
Zkria, A.; Abubakr, E.; Sittimart, P.; Yoshitake, T.
Hindawi Limited, 出版日 2020年, Journal of Nanomaterials, 2020巻, 掲載ページ 1-9, 英語, 1687-4129, 100583701, 85089017149

Laser-Induced Phosphorus-Doped Conductive Layer Formation on Single-Crystal Diamond Surfaces
Abubakr, E.; Zkria, A.; Ohmagari, S.; Katamune, Y.K.; Ikenoue, H.; Yoshitake, T.
American Chemical Society ({ACS}), 出版日 2020年, ACS Applied Materials and Interfaces, 12巻, 51号, 掲載ページ 57619-57626, 英語, 1944-8252, 100583704, 33296163, 85097760210

Diode parameters and ultraviolet light detection characteristics of n-type silicon/p-type nanocrystalline diamond heterojunctions at different temperatures
Chaleawpong, R.; Promros, N.; Zkria, A.; Charoenyuenyao, P.; Abubakr, E.; Yoshitake, T.
Elsevier B.V., 出版日 2020年, Thin Solid Films, 709巻, 英語, 0040-6090, 100583700, 85088090633

Formation of low resistivity layers on singlecrystalline diamond by excimer laser irradiation
ESLAM ABUBAKR
出版日 2019年05月, Diamond and Related Materials, 95巻, 英語, 0925-9635, 77544528, 85064398557

Laser-induced structure transition of diamond-like carbon coated on cemented carbide and formation of reduced graphene oxide
Zkria, A.; Haque, A.; Egiza, M.; Abubakr, E.; Murasawa, K.; Yoshitake, T.; Narayan, J.
Cambridge University Press, 出版日 2019年, MRS Communications, 9巻, 3号, 掲載ページ 910-915, 英語, 2159-6867, 100583702, 85068320695

Characterization of phosphorus doped singlecrystalline diamond prepared by Excimer-Laser Irradiations
Abubakr Eslam; Zkria Abdelrahman; Ohmagari Shinya; Imokawa Kaname; Katamune Yūki; Ikenoue Hiroshi; Yoshitake Tsuyoshi
In this work, Laser-induced surface doping technique was applied to singlecrystalline diamond substrate. ArF excimer laser with a wavelength of 193 nm and pulse duration of 20 ns was employed and irradiated upon immersed substrate in Phosphoric acid that acts as a dopant source. Surface resistivity gradually decreased with increasing laser fluence and number of pulsed laser irradiation. Furthermore, Conductivity enhanced with increasing temperature, which implies that the surface layer generated by irradiation is semiconducting. Depth profile was measured by secondary ion mass spectrometry. results confirmed the incorporation of phosphorus atoms up to 30 nm depths from the surface. Results are promising as a new method for doping of single crystalline diamond. However, the mechanism of the phosphorus incorporation requires more considerations., Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 出版日 2018年10月18日, 4巻, 掲載ページ 110-111, 英語, 2434-1436, 120006695717