External Link : http://www.linkedin.com/in/eslam-naeim

Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering

Sep. 2018 - Aug. 2021
Kyushu University, Department of Applied Science for Electronics and Materials, Laser Induced Conductive Layers Formation and Surface-Structural Modification on Diamond for Optoelectronic Devices Fabrication, Ph.D. in Material Sciences and Electrical Engineering, Aug.2021, Japan

Oct. 2016 - Sep. 2018
Kyushu University, Department of Applied Sci. for Elec. and Mat., Kyushu University, Fukuoka, Application of laser irradiation on ultrananocrystalline diamond/ hydrogenated amorphous carbon composite films Fabricated by Coaxial Arc Plasma Deposition, M.Sc. in Electrical Engineering and Material Science, Japan

Sep. 2012 - Jul. 2013
Aswan University, Electronic & Communication Dep., Faculty of Engineering, Solid State Electronics, Design of Digital Integrated Circuits, Renewable Energy Systems, Electronic circuits, and Microwave Electronic Devices, Preliminary Master’s Degree, Egypt

Sep. 2006 - Jul. 2011
Aswan University, Elec. & Comm. Dep., Faculty of Engineering, Aswan University, B.Sc. in Electrical Engineering, B.Sc. in Electrical Engineering, Ranked as Top First of the whole Electrical Engineering Department. Graduation Project (GSM Jammer) with grade: (Excellent(A+)), Egypt

2020
Kyushu University.
Overseas Scientific Activity Grant

2019
The 4th Asian Applied Physics Conference (Asian APC)
The 4th Asian Applied Physics Conference (Asian APC), oral presentation, Nov. 2019.
Best Presentation AWARD

2016
Kyushu University.
Kyushu University Program for Leading Graduate Schools • Full 5 years Scholarship granted for Master / Doctorate degree study at Kyushu University, 2016. • Financial support for international exchange research, Dec. 2018, Institute Neel, France / Hasselt Univ., Belgium, Mar. - June 2019., Eslam Abubakr

2011
• Undergraduate monetary for academic excellence, Aswan University, 2007-2011. (Ranked as Top First of the Electronic & Communication Dep.).

Au–Si Diffusion Effects on Surface Plasmon Resonance Sensor Using Internal Photoemission at Metal/Si Schottky Barrier
Masaya Ukaji; Eslam Abubakr; Yuki Imai; Tetsuo Kan
ACS Omega, 25 Nov. 2025
Scientific journal

Modifying interface properties for advanced self-powered refractory NIR plasmonic photodetection and broadband spectroscopy
Eslam Abubakr; Ashenafi Abadi; Shiro Saito; Hironori Suzuki; Tetsuo Kan
Materials Science in Semiconductor Processing, Oct. 2025
Scientific journal

Advanced self-powered NIR plasmonic photodetection and photoelectron spectroscopy
Eslam Abubakr; Shiro Saito; Hironori Suzuki; Tetsuo Kan
MRS Communications, 09 Sep. 2025
Scientific journal

Study on Temperature-Dependent Photoresponsivity and Stability of Mid-Infrared Photodetector Based on Si-Process-Compatible Plasmonic PtSi/p-Si Schottky Structure
Ashenafi Abadi Elyas; Eslam Abubakr; Daiji Noda; Ryo Ohta; Tetsuo Kan
Journal of Electronic Materials, Springer Science and Business Media LLC, 17 Mar. 2025
Scientific journal

Advanced Room-Temperature NIR Plasmonic Photodetection and Reconstructive Spectroscopy
Eslam Abubakr; Ashenafi Abadi; Masaaki Oshita; Shiro Saito; Hironori Suzuki; Tetsuo Kan
IEEE Transactions on Electron Devices, Jan. 2025
Scientific journal

Laser-induced conductive layer on singlecrystalline diamond
Yoshitake Tsuyoshi; Abubakr Eslam; Zkria Abdelrahman; Katamune Yuki; Ohmagari Shinya; Imokawa Kaname; Ikenoue Hiroshi
JSAP Annual Meetings Extended Abstracts, The Japan Society of Applied Physics, 2019.2, 1425-1425, 04 Sep. 2019
Japanese

Optimizing geometry and metal-dependent performance of Si-based Schottky plasmonic photodetectors
Eslam Abubakr; Ashenafi Abadi; Masaaki Oshita; Shiro Saito; Tetsuo Kan
Apr. 2024, Optical Materials, 155118529

Characterization of an uncooled mid-infrared Schottky photodetector based on a 2D Au/PtSi/p-Si nanohole array at a higher light modulation frequency
Ashenafi Abadi; Eslam Abubakr; Masaaki Oshita; Daiji Noda; Ryo Ohta; Tetsuo Kan
10 Mar. 2024, Applied Optics, 154641670

Nanocarbon ohmic electrodes fabricated by coaxial arc plasma deposition for phosphorus-doped diamond electronics application
Sreenath Mylo Valappil; Shinya Ohmagari; Abdelrahman Zkria; Phongsaphak Sittimart; Eslam Abubakr; Hiromitsu Kato; Tsuyoshi Yoshitake
01 Aug. 2022, AIP Advances, 117064327

Formation of p-n⁺ diamond homojunctions by shallow doping of phosphorus through liquid emersion excimer laser irradiation
ESLAM ABUBAKR
Informa {UK} Limited, 06 Jun. 2022, Materials Research Letters, 10, 10, 666-674, English, 2166-3831, 114266486

Correlated Electrical Conductivities to Chemical Configurations of Nitrogenated Nanocrystalline Diamond Films
Abdelrahman Zkria; Hiroki Gima; Eslam Abubakr; Ashraf Mahmoud; Ariful Haque; Tsuyoshi Yoshitake
03 Mar. 2022, Nanomaterials, 109188393

Laser-induced novel ohmic contact formation for effective charge collection in diamond detectors
Eslam Abubakr; Shinya Ohmagari; Abdelrahman Zkria; Hiroshi Ikenoue; Tsuyoshi Yoshitake
Elsevier {BV}, Mar. 2022, Materials Science in Semiconductor Processing, 139, 106370-106370, 104194452

Diode Parameters and Equivalent Electrical Circuit Model of n-Type Silicon/B-Doped p-Type Ultrananocrystalline Diamond Heterojunctions Manufactured Through Coaxial Arc Plasma Deposition
ESLAM ABUBAKR
Coaxial arc plasma deposition (CAPD) was employed to manufacture n-type silicon/boron-doped p-type ultrananocrystalline diamond heterojunctions. Measurement and analysis of their dark current density-voltage curve were carried out at room temperature in order to calculate the requisite
junction parameters using the Cheung and Norde approaches. For the calculation based on the Cheung approach, the series resistance (Rs), ideality factor (n) and barrier height (Φb) were 4.58 kΩ, 2.82 and 0.75 eV, respectively. The values
of Rs and Φb were in agreement with those calculated using the Norde approach. Their characteristics for alternative current impedance at different frequency values were measured and analyzed as a function of the voltage (V) values ranging from 0 V
to 0.5 V. Appearance of the real (Z′) and imaginary (Z″) characteristics for all V values presented single semicircles. The centers of the semicircular curves were below the Z′ axis and the diameter of the semicircles decreased with increments
of the V value. The proper equivalent electrical circuit model for the manufactured heterojunction behavior was comprised of Rs combined with the parallel circuit of resistance and constant phase element., 01 Aug. 2020, Journal of Nanoscience and Nanotechnology, English, 1533-4880, 77544542

Impedance spectroscopy analysis of n-type (nitrogen-doped) ultrananocrystalline diamond/p-type Si heterojunction diodes
Zkria, A.; Shaban, M.; Abubakr, E.; Yoshitake, T.
{IOP} Publishing, 2020, Physica Scripta, 95, 9, English, 1402-4896, 100583705, 85090385893

Structural evolution of laser-irradiated ultrananocrystalline diamond/amorphous carbon composite films prepared by coaxial arc plasma
Zkria, A.; Abubakr, E.; Egiza, M.; Haque, A.; Narayan, J.; Yoshitake, T.
{IOP} Publishing, 2020, Applied Physics Express, 13, 10, English, 1882-0786, 100583706, 85092559518

Analysis of Electrical Characteristics of Pd/ n -Nanocarbon/ p -Si Heterojunction Diodes: By C - V - f and G / w - V - f
Zkria, A.; Abubakr, E.; Sittimart, P.; Yoshitake, T.
Hindawi Limited, 2020, Journal of Nanomaterials, 2020, 1-9, English, 1687-4129, 100583701, 85089017149

Laser-Induced Phosphorus-Doped Conductive Layer Formation on Single-Crystal Diamond Surfaces
Abubakr, E.; Zkria, A.; Ohmagari, S.; Katamune, Y.K.; Ikenoue, H.; Yoshitake, T.
American Chemical Society ({ACS}), 2020, ACS Applied Materials and Interfaces, 12, 51, 57619-57626, English, 1944-8252, 100583704, 33296163, 85097760210

Diode parameters and ultraviolet light detection characteristics of n-type silicon/p-type nanocrystalline diamond heterojunctions at different temperatures
Chaleawpong, R.; Promros, N.; Zkria, A.; Charoenyuenyao, P.; Abubakr, E.; Yoshitake, T.
Elsevier B.V., 2020, Thin Solid Films, 709, English, 0040-6090, 100583700, 85088090633

Formation of low resistivity layers on singlecrystalline diamond by excimer laser irradiation
ESLAM ABUBAKR
May 2019, Diamond and Related Materials, 95, English, 0925-9635, 77544528, 85064398557

Laser-induced structure transition of diamond-like carbon coated on cemented carbide and formation of reduced graphene oxide
Zkria, A.; Haque, A.; Egiza, M.; Abubakr, E.; Murasawa, K.; Yoshitake, T.; Narayan, J.
Cambridge University Press, 2019, MRS Communications, 9, 3, 910-915, English, 2159-6867, 100583702, 85068320695

Characterization of phosphorus doped singlecrystalline diamond prepared by Excimer-Laser Irradiations
Abubakr Eslam; Zkria Abdelrahman; Ohmagari Shinya; Imokawa Kaname; Katamune Yūki; Ikenoue Hiroshi; Yoshitake Tsuyoshi
In this work, Laser-induced surface doping technique was applied to singlecrystalline diamond substrate. ArF excimer laser with a wavelength of 193 nm and pulse duration of 20 ns was employed and irradiated upon immersed substrate in Phosphoric acid that acts as a dopant source. Surface resistivity gradually decreased with increasing laser fluence and number of pulsed laser irradiation. Furthermore, Conductivity enhanced with increasing temperature, which implies that the surface layer generated by irradiation is semiconducting. Depth profile was measured by secondary ion mass spectrometry. results confirmed the incorporation of phosphorus atoms up to 30 nm depths from the surface. Results are promising as a new method for doping of single crystalline diamond. However, the mechanism of the phosphorus incorporation requires more considerations., Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 18 Oct. 2018, 4, 110-111, English, 2434-1436, 120006695717