理学博士, 東京大学

誘電特性

量子ドット

摩擦

新物質設計

ナノエレクトロニクス

ナノテクノロジー

Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering

Mar. 1972
The University of Tokyo, Graduate School, Division of Science, 物理学専攻

Mar. 1967
The University of Tokyo, Faculty of Science, 物理学科

Jun. 2006 - May 2008
評議委員, 日本表面科学会, Society

Jun. 2006 - May 2007
出版委員, 日本表面科学会, Society

Apr. 2006
評議員, 応用物理学会, Society

2004 - 2004
会員増強担当理事, 日本表面科学会, Society

2002 - 2004
評議委員, 日本表面科学会, Society

1994 - 1995
分科会世話人, 日本物理学会, Society

The anisotropy of ac conductivity and dielectric constant of anisotropic conductor-insulator composites
Yuichi Hazama; Jun Nakamura; Akiko Natori
JOURNAL OF MATERIALS SCIENCE, 45, 11, 2843-2851, Jun. 2010, Peer-reviwed
Scientific journal, English

Control mechanism of friction by dynamic actuation of nanometer-sized contacts
Hiroyuki Iizuka; Jun Nakamura; Akiko Natori
PHYSICAL REVIEW B, 80, 15, 155449-1-8, Oct. 2009, Peer-reviwed
Scientific journal, English

Ballistic thermal conductance of electrons in graphene ribbons
Eiji Watanabe; Sho Yamaguchi; Jun Nakamura; Akiko Natori
PHYSICAL REVIEW B, 80, 8, 085404-1-6, Aug. 2009, Peer-reviwed
Scientific journal, English

Anisotropic half-metallic ground state of Mn atomic wire on GaAs(110)
Motoi Hirayama; Akiko Natori; Jun Nakamura
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27, 4, 2062-2065, Jul. 2009, Peer-reviwed
Scientific journal, English

In-plane strain effects on dielectric properties of the HfO2 thin film
Sadakazu Wakui; Jun Nakamura; Akiko Natori
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27, 4, 2020-2023, Jul. 2009, Peer-reviwed
Scientific journal, English

Structural and electronic properties of the planar C-skeleton polymers
Jun Nakamura; Nariaki Arimura; Motoi Hirayama; Akiko Natori
APPLIED PHYSICS LETTERS, 94, 22, 223107-1-3, Jun. 2009, Peer-reviwed
Scientific journal, English

Band-bending effects on scanning tunneling microscope images of subsurface dopants: First-principles calculations
Motoi Hirayama; Jun Nakamura; Akiko Natori
JOURNAL OF APPLIED PHYSICS, 105, 8, -, Apr. 2009
Scientific journal, English

Negative donors in bulk Si and Si/SiO2 quantum wells in a magnetic field
Jun-ichi Inoue; Tomo Chiba; Akiko Natori; Jun Nakamura
PHYSICAL REVIEW B, 79, 3, 035206-1-8, Jan. 2009, Peer-reviwed
Scientific journal, English

Size effects in friction of multiatomic sliding contacts
Masanori Igarashi; Akiko Natori; Jun Nakamura
PHYSICAL REVIEW B, 78, 16, 165427-1-10, Oct. 2008, Peer-reviwed
Scientific journal, English

Atomic scale dielectric constant near the SiO2/Si(001) interface
Sadakazu Wakui; Jun Nakamura; Akiko Natori
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 26, 4, 1579-1584, Jul. 2008, Peer-reviwed
Scientific journal, English

Semiconducting nature of the oxygen-adsorbed graphene sheet
Jun Ito; Jun Nakamura; Akiko Natori
JOURNAL OF APPLIED PHYSICS, 103, 11, 113712, 1-5, Jun. 2008
Scientific journal, English

Nagative donors in multivalley semiconductors
J. Inoue; J. Nakamura; A. Natori
Phys. Rev. B, 77, 125213-1 - 125213-5, 2008
Scientific journal, English

Structural bistability of the oxygen-adsorbed graphene sheet
J. Nakamura; J. Ito; A. Natori
PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 100, 052019-052022, 2008, Peer-reviwed
International conference proceedings, English

Ballistic thermal conductance of a graphene sheet
Koichi Saito; Jun Nakamura; Akiko Natori
PHYSICAL REVIEW B, 76, 11, 115409-1 - 115409-4, Sep. 2007, Peer-reviwed
Scientific journal, English

Simulations of scanning Tunneling Microscopy for B-/P-doped Si(111) surfaces
Motoi Hirayama; Jun Nakamura; Akiko Natori
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46, 8B, 5643-5646, Aug. 2007
Scientific journal, English

Dielectric properties of the interface between Si and SiO2
Sadakazu Wakui; Jun Nakamura; Akiko Natori
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46, 5B, 3261-3264, May 2007, Peer-reviwed
Scientific journal, English

Mechanism of velocity saturation of atomic friction force and the dynamic superlubricity at torsional resonance
M.Igarashi; J.Nakamura; A.Natori
Jpn.J.Appl.Phys., 46, 5591-5594, 2007
Scientific journal, English

Nano-scale profile of the dielectric constant near the Si/oxide interface: A first-principles approach
J. Nakamura; S. Wakui; S. Eguchi; R. Yanai; A. Natori
ECS Transactions, 11, 6, 173-182, 2007, Peer-reviwed
International conference proceedings, English

First-principles evaluations of dielectric constants for ultra-thin semiconducting films
Jun Nakamura; Akiko Natori
SURFACE SCIENCE, 600, 18, 4332-4336, Sep. 2006
Scientific journal, English

ac conductivity and dielectric constant of conductor-insulator composites
Tan Benny Murtanto; Satoshi Natori; Jun Nakamura; Akiko Natori
PHYSICAL REVIEW B, 74, 11, 115206, 1-7, Sep. 2006, Peer-reviwed
Scientific journal, English

Charge correlation and spin coupling in double quantum dots: A quantum diffusion Monte Carlo study
Hyuga Masu; Taichi Yamada; Jun Nakamura; Akiko Natori
PHYSICAL REVIEW B, 74, 7, 75312, 1-8, Aug. 2006, Peer-reviwed
Scientific journal, English

First-principles calculations of dielectric constants for ultrathin Sio(2) films
Sadakazu Wakui; Jun Nakamura; Akiko Natori
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 24, 4, 1992-1996, Jul. 2006, Peer-reviwed
Scientific journal, English

Dielectric discontinuity at structural boundaries in Si
Jun Nakamura; Akiko Natori
APPLIED PHYSICS LETTERS, 89, 5, 053118, Jul. 2006, Peer-reviwed
Scientific journal, English

Dielectric properties of hydrogen-terminated Si(111) ultrathin films
J Nakamura; S Ishihara; A Natori; T Shimizu; K Natori
JOURNAL OF APPLIED PHYSICS, 99, 5, 054309-1-054309-5, Mar. 2006, Peer-reviwed
Scientific journal, English

Structural stabilities and electronic properties for planar Si compounds
M. Hirayama; J. Nakamura; A. Natori
e-Journal of Surf. Sci. and Nanotechnology, 4, 1-6, 2006, Peer-reviwed
Scientific journal, English

Charge correlation and spin coupling in double quabtum dots
H.Masu; J.Nakamura; A.Natori
Proceed. of 28th Int. Conf. on the Physics and Semiconductors, in press, 2006, Peer-reviwed
International conference proceedings, English

Dielectric discontinuity at a twin boundary in Si(111)
J. Nakamura; A. Natori
Proc. of 28th ICPS, -, 2006
International conference proceedings, English

Double-slip mechanism in atomic-scale friction: Tomlinson model at finite temperatures
J Nakamura; S Wakunami; A Natori
PHYSICAL REVIEW B, 72, 23, 235415-1-235415-6, Dec. 2005, Peer-reviwed
Scientific journal, English

Electronic and magnetic properties of BNC ribbons
J Nakamura; T Nitta; A Natori
PHYSICAL REVIEW B, 72, 20, 205429-1 - 205429-5, Nov. 2005, Peer-reviwed
Scientific journal, English

Structural stability of Si(001) and Ge(001) in external electric fields
J Nakamura; A Natori
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44, 7B, 5413-5416, Jul. 2005, Peer-reviwed
Scientific journal, English

Energy barrier for dimer flipping at the Si(001)-(2x1) surface in external electric fields
J Nakamura; A Natori
PHYSICAL REVIEW B, 71, 11, 113303-1-113303-4, Mar. 2005, Peer-reviwed
Scientific journal, English

半導体超薄膜の誘電特性
中村淳; 名取晃子
表面科学, The Surface Science Society of Japan, 26, 7, 392-397, 2005, Peer-reviwed, We have explored dielectric properties of ultra-thin Si(111) films using two different evaluation methods based on the first-principles calculations, the internal field (IF) method and the dipole moment (DM) method. As the thickness of the film increases, the dielectric constant evaluated at the innermost region of the film approaches a value near to the experimental bulk dielectric constant at a thickness of only 8 bi-layers. The theoretical value of the electronic dielectric constant for the Si(111) film is 12.85, which is only 6.2% higher than the experimental one. Furthermore, we have shown that the IF method is applicable to microscopic analysis of dielectric properties. The spatial variation in dielectric constant near the surface reveals that depolarized charges at the surface penetrate into the film up to the thickness of 3 bi-layers, resulting in an effective reduction of the dielectric constant near the surface. We have also discussed a microscopic picture of polarization on atomic scale.
Scientific journal, Japanese

Ga-As dimer structure for the GaAs(001)-c(4x4) surface
A Ohtake; J Nakamura; N Koguchi; A Natori
SURFACE SCIENCE, 566, 58-62, Sep. 2004, Peer-reviwed
Scientific journal, English

Atomic scale friction of nanoscale clusters
K Ohno; T Nitta; J Nakamura; A Natori
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 22, 4, 2026-2029, Jul. 2004, Peer-reviwed
Scientific journal, English

Kinetics in surface reconstructions on GaAs(001)
A Ohtake; P Kocan; J Nakamura; A Natori; N Koguchi
PHYSICAL REVIEW LETTERS, 92, 23, 236105-1-236105-4, Jun. 2004, Peer-reviwed
Scientific journal, English

Band discontinuity at ultrathin SiO2/Si(001) interfaces
M. Watarai; J. Nakamura; A. Natori
Phys. Rev. B, 69, 035312-1-035312-6, 2004, Peer-reviwed
Scientific journal, English

Surface electromigration of in-covered Si high-index surfaces
K Sakamoto; Y Matsubayashi; M Shimada; T Yamada; A Natori; H Yasunaga
APPLIED SURFACE SCIENCE, 212, 249-254, May 2003, Peer-reviwed
Scientific journal, English

Dynamics of c(4 x 2) phase-transition in Si(100) surfaces
A Natori; M Osanai; J Nakamura; H Yasunaga
APPLIED SURFACE SCIENCE, 212, 705-710, May 2003, Peer-reviwed
Scientific journal, English

Structural stability of the Ge/Si(113)-2x2 surface
J. Nakamura; Z. Zhang; K. Sumitomo; H. Omi; A. Natori
Appl. Surf. Sci., 212/213, 724-729, 2003, Peer-reviwed
Scientific journal, English

Anisotropy in conductance of a quasi-one dimensional metallic surface state measured by a square micro-four-point probe method
T. Kanagawa; R. Hobara; I. Matsuda; T. Tanikawa; A. Natori; S. Hasegawa
Phys. Rev. Lett., 91, 036805-1-036805-4, 2003, Peer-reviwed
Scientific journal, English

極薄SiO2/Si界面のエネルギー障壁の第一原理計算
M. Watarai; J. Nakamura; A. Natori
表面科学, The Surface Science Society of Japan, 24, 9, 550-555, 2003, Peer-reviwed, The energy barrier and penetration depth of a hole are studied for ultrathin SiO₂/Si interfaces. Layer thickness dependence and injected carrier concentration dependence are calculated for the superlattice structure, by using a first-principles pseudo-potential approach based on the density-functional theory. A new method to evaluate the energy barrier is proposed, which is derived from calculation of both the energy band structure and behavior of the Bloch function. The energy barrier for a hole is reduced with a decrease in Si layer thickness by confinement effect and is reduced also with the monolayer thickness of SiO₂. The energy barrier increases by electron injection and decreases by hole injection.
Scientific journal, Japanese

Electronic properties in nano-structures
A. Natori
The School on simulation and modeling physics, Nov. 2002
English

Photoluminescence of charged magneto-excitons in InAs single quantum dots
A Natori; S Ohnuma; NH Quang
APPLIED SURFACE SCIENCE, 190, 1-4, 205-211, May 2002, Peer-reviwed
Scientific journal, English

In-phase step wandering on vicinal Si(111) surfaces
A Natori; N Suga
APPLIED SURFACE SCIENCE, 190, 1-4, 96-102, May 2002, Peer-reviwed
Scientific journal, English

Stuctural stabilityy of the Ge/Si(113)-2x2 surfaces
J. Nakamura; A. Natori; Z. Zhang; K. Sumitomo; H. Omi; T. Ogino
Proc. of 6-th Sympo. Atomic-scale Surface and Interface Dynamics, 14, 51-54, 2002
International conference proceedings, English

Atomic structure of the Ge/Si(113)-(2x2) surface
Z. Zhang; K. Sumitomo; H. Omi; T. Ogino; A. Natori
Phys. Rev. Lett., 88, 256101-1 - 256101-4, 2002, Peer-reviwed
Scientific journal, English

Au-Si bonding on Si(111) surfaces
M. Murayama; T. Nakayama; A. Natori
Jpn. J. Appl. Phys., The Japan Society of Applied Physics, 40, 12, 6976-6979, 2002, Peer-reviwed, To investigate the Au–Si bonding feature on Si(111) surfaces, surface energy calculations have been performed for $1 \times 1$- and $\sqrt{3} \times \sqrt{3}$-Au/Si(111) systems by the first-principles method in a local density approximation. It was found that the Au overlayer considerably stabilizes the Si(111) surface. By analyzing the changes in the surface energy and the charge density at various Au positions on the surface, it was shown that the large electronegativity of Au produces covalent-like Au–Si bonds by either terminating dangling bonds of surface Si or inducing the charge transfer from Si–Si to Au–Si bonds, both of which promote surface stabilization and determine the Au overlayer height on Si(111) surfaces.
Scientific journal, English

New structure model for the GaAs(001)-c(4x4) surfaces
A. Ohtake; J. Nakamura; S. Tokumoto; N. Koguchi; A. Natori
Phys. Rev. Lett., 89, 206102-1-206102-4, 2002, Peer-reviwed
Scientific journal, English

Strain effect on surface melting of Si(111)
A Natori; H Harada; NJ Wu; H Yasunaga
APPLIED SURFACE SCIENCE, 169, 20-24, Jan. 2001
Scientific journal, English

Charged magnetoexcitons in parabolic quantum dots II
A.Natori; S.Ohnuma; N.H.Quang
Jpn. J. Appl. Phys., 40, 1951-1954, 2001, Peer-reviwed
Scientific journal, English

Surface electromigration of In on vicinal Si(001)
K Sakamoto; NJ Wu; A Natori; H Yasunaga
APPLIED SURFACE SCIENCE, 169, 480-484, Jan. 2001
Scientific journal, English

Surface electromigration of Au ultrathin film on MoS2
NJ Wu; S Shimizu; MT Hermie; K Sakamoto; A Natori; H Yasunaga
APPLIED SURFACE SCIENCE, 169, 485-488, Jan. 2001
Scientific journal, English

Electronic Structure of root 3 x root 3-Au/Si(111) surfaces
M.Murayama; T.Nakayama; A.Natori
Surf.Sci., 493, 626-632, 2001, Peer-reviwed
Scientific journal, English

Dimer buckling dynamics in the vicinity of missing dimers on Si(111) surfaces
M.Osanai; H.Yasunaga; A.Natori
Surf. Sci., 493, 319-324, 2001, Peer-reviwed
Scientific journal, English

Charged magnetoexcitons in parabolic quantum dots
NH Quang; S Ohnuma; A Natori
PHYSICAL REVIEW B, 62, 19, 12955-12962, Nov. 2000
Scientific journal, English

Ordering dynamics of anisotropic missing dimer clusters on Si(001) surfaces
T Kawabe; A Natori
SURFACE SCIENCE, 462, 1-3, 181-186, Aug. 2000
Scientific journal, English

Electronic structures and the charge transfer of Au overlayer on Si(111) surfaces
M Murayama; T Nakayama; A Natori
APPLIED SURFACE SCIENCE, 159, 45-49, Jun. 2000
Scientific journal, English

Novel transition mechanism of surface electromigration induced step structure on vicinal Si(111) surfaces
N.Suga; J.Kinpara; Nan-Jian Wu; H.Yasunaga; A.Natori
Jpn. J. Appl. Phys., 39, 4412-4416, 2000
English

Frustrated nanodomains on O/Cu(100)
Y.Ishimaru; Nan-Jian Wu; H.Yasunaga; A.Natori
Jpn. J. Appl. Phys., 39, 4417-4420, 2000
English

Surface melting of vicinal Si(111) surfaces
A Natori; H Harada
SURFACE SCIENCE, 438, 1-3, 162-172, Sep. 1999
Scientific journal, English

Stability of anisotropic missing dimer clusters on Si(001) surfaces
A Natori; T Kawabe
SURFACE SCIENCE, 433, 600-604, Aug. 1999
Scientific journal, English

Magnetic-Field Induced Transitions of Many-Electron States in Quantum Dots
A. Natori; D. Nakamura
Jpn. J. Appl. Phys., 38, 380-383, 1999
English

Decay process of a crater/hillock and step structure transformation
A Natori; M Murayama; D Matsumoto; H Yasunaga
SURFACE SCIENCE, 409, 2, 160-170, Jul. 1998
Scientific journal, English

Interface atomic structures in alkali halides heteroepitaxy
A Natori; K Toda; A Tanaka; H Yasunaga
APPLIED SURFACE SCIENCE, 130, 616-622, Jun. 1998
Scientific journal, English

Magnetic field effects on anisotropic quantum dots
A. Natori; Y. Sugimoto; M. Fujito
Jpn. J. Appl. Phys., 36, 3960-3963, 1997, Peer-reviwed
Scientific journal, English

Capacitance of anisotropic quantum dpts
A. Natori; M. Fujito; H.Yasunaga
Superlattices and Microstructures, 22, 137-142, 1997, Peer-reviwed
Scientific journal, English

Many-electron ground states in anisotropic quantum dots
M.Fujito; A.Natori; H.Yasunaga
Physical Review B, 53, 15, 9952, 1996
Scientific journal, English

Heteroepitaxy of KCl on KBr Substrates
A,Natori; A.Tanaka; H.Yasunaga
Thin Solid Films, 281-282, 39, 1996
Scientific journal, English

Atomic Structures of Ag on √3×√3 Ag/Si((]G0003[)) and on 7×7 Si((]G0003[))
A.Natori; M.Murayama; H.Yasunaga
Surface Science, 357-358, 47, 1996
Scientific journal, English

Atomic structure and atomic dynamics on "1×1" Si(111) at high temperatures
A.Natori; T.Suzuki; H.Yasunaga
Surf. Sci., 367, 56, 1996
Scientific journal, English

Step structure transformation induced by DC on vicinal Si(111)
A. Natori
Jpn. J. Appl. Phys., 33, 3538-3544, 1994, Peer-reviwed
Scientific journal, English

Surface diffusion on a stepped surfaces
A. Natori; R. W. Godby
Phys. Rev. B, 47, 15816-15822, 1993, Peer-reviwed
Scientific journal, English

Surface-electromigration-induced step structure transition on Si(111) vicinal surfaces
A. Natori
The step structure transition between a regular step and a bunched step on vicinal Si (111) surfaces induced by DC is studied by the kinetic Monte Carlo simulation in a terrace-adatom-step-kink (TASK) model of a vicinal surface. In the TASK model, effective force due to DC is taken into account explicitly on both diffusion process of Si adatoms and capture/emission process at a step edge. In the capture-limited regime, step bunching is induced by stepdown force and a regular step is formed by step-up force, corresponding to the experimental temperature range I. In the diffusion-limited regime, step bunching is induced by step-up force and in-phase wandering is induced on a regular step by step-down force, corresponding to the experimental temperature range II. The relation of the two regimes with "non-transparent" and "transparent" conditions at step edges is discussed., The Japanese Association for Crystal Growth (JACG), 2002, 日本結晶成長学会誌, 29, 1, 44-49, English, Peer-reviwed, Introduction other, 0385-6275, 110002715521, AN00188386

表面物性工学ハンドブック
小間篤; 青野正和; 石橋幸治; 塚田捷; 常行真司; 長谷川修司; 八木克道; 吉信淳 編
Japanese, Joint work, 1.7.1 モンテカルロシミュレーション、14.4.1 表面エレクトロマイグレーション(理論）、14.4.3 エレクトロマイグレーションによるステップ再配列（理論）, 丸善, 2007

電子材料ハンドブック
木村忠正; 八百隆文; 奥村次徳; 豊田太郎
Japanese, Joint work, １．４ 固体の伝導寄稿, 朝倉書店, 2006

「半導体大辞典」2.3 表面現象
名取晃子
Japanese, Joint work, 工業調査会, 2000

"Advances in the understanding of crystal growth mechanisms" Step structure of Si(111) vicinal surfaces
A.Natori
English, Joint work, North-Holland, 1997

表面科学シリーズ２「表面における理論Ｉ」６-１節 モンテカルロ法
名取晃子
Japanese, Joint work, 丸善, 1995

「結晶成長ハンドブック」5.1.3 テラスにおける表面拡散
名取晃子
Japanese, Joint work, 共立出版, 1995

"Metal-semiconductor interfaces" 2.2 Formation of metal-overlayer on semiconductors by surface electromigration
A.Natori; H.Yasunaga
English, Joint work, Ohmsha, 1995

電子工学初歩シリーズ「半導体物性」
名取晃子
Japanese, 培風館, 1995

「電磁気学」第１章 静電界
名取晃子
Japanese, Joint work, 近代科学社, 1993

Half-metallic states of Mn atomic wires on GaAs(110)
M.Hirayama; J.Nakamura; A.Natori
Oral presentation, English, Int. Sympo. on Surface Science and Nanotechnology
Nov. 2008

First-principles evaluation of the polytype-dependence of the local dielectric constant for SiC
K.Sato; JY.Iwasaki; S.Wakui; J.Nakamura; A.Natori
Oral presentation, English, Int. Sympo. on Surface Science and Nanotechnology
Nov. 2008

Conductivity and dielectric constant of anisotropic CNT/polymer composites
Y.Hazama; J.Nakamura; A.Natori
Oral presentation, English, Int. Sympo. on Surface Science and Nanotechnology
Nov. 2008

Dielectric constant of the ultra-thin La2O3 (0001) film
R.Yanai; J.Nakamura; A.Natori
Oral presentation, English, Int. Sympo. on Surface Science and Nanotechnology
Nov. 2008

Structural stability and cohesive properties of the oxygen-adsorbed graphene
S.Eguchi; J.Nakamura; A.Natori
Oral presentation, English, Int. Sympo. on Surface Science and Nanotechnology
Nov. 2008

GaAs(110)表面上のGa置換Mn原子鎖のスピン状態と電子状態
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 第２８回表面科学学術講演会
Nov. 2008

HfO2超薄膜の誘電特性
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 第２８回表面科学学術講演会
Nov. 2008

カーボンナノチューブ分散媒質の異方的電気伝導特性
狭間裕一; 中村淳; 名取晃子
Oral presentation, Japanese, 第２８回表面科学学術講演会
Nov. 2008

Si(111)-(7x7)表面上の銀クラスター形成過程の計算機シミュレーション
千葉朋; 冷清水裕子; 泉水一鉱; 須藤彰三; 中村淳; 名取晃子
Oral presentation, Japanese, 第２８回表面科学学術講演会
Nov. 2008

La2O3(0001)超薄膜の誘電特性
谷内良亮; 涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 第２８回表面科学学術講演会
Nov. 2008

酸素吸着グラフェンの積層構造の構造安定性と凝集性質
江口俊輔; 中村淳; 名取晃子
Oral presentation, Japanese, 第２８回表面科学学術講演会
Nov. 2008

GaAs(110)表面上のGa置換Mn原子ワイヤの原子配置とスピン・電子状態
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 第６９回応用物理学会学術講演会
Sep. 2008

HfO2超薄膜の局所誘電率プロファイル
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 第６９回応用物理学会学術講演会
Sep. 2008

Si(111)-(7x7)表面上の銀クラスター形成過程の計算機シミュレーション
千葉朋; 冷清水裕子; 岩泉一鉱; 須藤彰三; 中村淳; 名取晃子
Oral presentation, Japanese, 第６９回応用物理学会学術講演会
Sep. 2008

La2O3(0001)超薄膜の誘電特性
谷内良亮; 中村淳; 名取晃子
Oral presentation, Japanese, 第６９回応用物理学会学術講演会
Sep. 2008

SiC結晶多形の誘電率：第一原理計算による積層構造依存性評価
佐藤耕平; 岩崎雄一; 中村淳; 名取晃子
Oral presentation, Japanese, 第６９回応用物理学会学術講演会
Sep. 2008

グラフェンリボンのバリスティック熱コンダクタンス
山口翔; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会２００８年秋季大会
Sep. 2008

GaAs(110)表面上のGa置換MNワイヤの原子配置とスピン・電子状態
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会２００８年秋季大会
Sep. 2008

異方的な超微粒子分散媒質の高周波電気伝導特性
狭間裕一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会２００８年秋季大会
Sep. 2008

酸化グラフェン積層物質の構造安定性
江口俊輔; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会２００８年秋季大会
Sep. 2008

ナノスケールSiO2/Si界面の局所誘電特性に及ぼす欠陥の影響
涌井貞一; 谷内良亮; 中村淳; 名取晃子
Oral presentation, Japanese, 特定領域研究「ポストスケール」第２回成果報告会
Aug. 2008

ＳｉＯ２／Ｓｉ（００１）界面におけるナノスケール誘電特性の第一原理計算
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 物理学会第６３回年次大会
Mar. 2008

ＳｉＯ２薄膜中の欠陥近傍における局所誘電率の異常増大
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 第５５回応用物理学関係連合講演会
Mar. 2008

ナノスケールＳｉＯ２／Ｓｉ界面の電子状態と局所誘電特性に及ぼす欠陥の影響
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 特定領域研究「シリコンナノエレクトロニクスの新展開」第2回成果報告会
Mar. 2008

不純物ドープＳｉ（１１１）表面のＳＴＭ像の第一原理計算：ＳＴＭ像の不純物原子種依存性
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会第６３回年次大会
Mar. 2008

多谷半導体中のＤ＾－基底状態：磁場効果
井上純一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会第６３回年次大会
Mar. 2008

ナノスケールの摩擦機構：ティップサイズ効果
五十嵐正典; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会第６３回年次大会
Mar. 2008

不純物ドープＳｉ（１１１）表面のＳＴＭ像の第一原理計算
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 第５５回応用物理学関係連合講演大会
Mar. 2008

Dielectric properties of the interface between Si and SiO2
S. Wakui; J. Nakamura; A. Natori
Oral presentation, English, 35th Conf. on the Physics and Chemistry of Surfaces and Interfaces
Jan. 2008

Atomic-scale friction of nanometer-sized contacts
M.Igarashi; J.Nakamura; A.Natori
Oral presentation, English, 14th Int. Conf. on Solid Films and Surfaces
2008

Anomalous enhancement of the local dielectric constant near defects in SiO2
S.Wakui; J.Nakamura; A.Natori
Oral presentation, English, 14th Int. Conf. on Solid Films and Surfaces
2008

Polytype depndence on permittivity of SiC
J.Nakamura; Y.Iwasaki; S.Wakui; A.NAatori
Oral presentation, English, 14th Int. Conf. on Solid Films and Surfaces
2008

First-principles calculation on STM images for subsurface dopants: tip-induced band-bending and dependence on dopant species
M.Hirayama; J.Nakamura; A.Natori
Oral presentation, English, 14th Int. Conf. on Solid Films and Surfaces
2008

ナノスケールＳｉＯ２／Ｓｉ界面の電子状態と局所誘電特性に及ぼす欠陥の影響
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 特定領域研究「シリコンナノエレクトロニクスの新展開」第３回全体会議,特定領域研究「シリコンナノエレクトロニクスの新展開」第３回全体会議
Dec. 2007

ナノスケールＳｉＯ２／Ｓｉ界面の電子状態と局所誘電特性に及ぼす欠陥の影響
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 特定領域研究「シリコンナノエレクトロニクスの新展開」 第３回全体会議
Dec. 2007

Si量子ドットの多電子基底状態
枡日向; 中村淳; 名取晃子
Oral presentation, Japanese, 第２７回表面科学講演大会,第２７回表面科学講演大会
Nov. 2007

Mechanism of velocity saturation and lateral resonance in atomic-scale sliding friction
M.Igarashi; J.Nakamura; A.Natori
Oral presentation, English, IVC-17/ICSS-13 and ICN+T 2007
Jul. 2007

First-principles calculations on STM images for subsurface dopanats
M.Hirayama; J.Nakamura; A.Natori
Oral presentation, English, IVC-17/ICSS-13 and ICN+T 2007
Jul. 2007

Structural bistability of the oxygen-adsorbed graphene sheet
J.Nakamura; J.Ito; A.Natori
Oral presentation, English, IVC-17/ICSS-13 and ICN+T 2007
Jul. 2007

SiO2/Si(001)界面のナノスケール誘電特性
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, ゲートスタック研究会 -材料・プロセス・評価の物理-,ゲートスタック研究会 -材料・プロセス・評価の物理-
Feb. 2007

ac conductivity and dielectric constant of conductor-insulator composites
Y.Koyama; T.B.Murtanto; J.Nakamura; A.Natori
Oral presentation, English, Polytronic 2007,Polytronic 2007
Jan. 2007

第一原理計算によるSiO2/Si(001)界面のナノスケール誘電特性
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会2007年春季大会,日本物理学会2007年春季大会
2007

不純物ドープSi(111)表面のSTM像の第一原理計算
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会2007年春季大会,日本物理学会2007年春季大会
2007

酸素吸着グラフェンの構造双安定性の第一原理計算
伊藤潤; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会2007年春季大会,日本物理学会2007年春季大会
2007

SiO2/Si(001)界面のナノスケール誘電特性
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 第54回応用物理学関係連合講演会,第54回応用物理学関係連合講演会
2007

Si(111)水素終端表面近傍不純物のSTMシミュレーション：不純物種依存性と探針誘起バンドベンディング
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 第54回応用物理学関係連合講演会,第54回応用物理学関係連合講演会
2007

グラフェンのバリスティック熱伝導特性
齋藤浩一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会第６２回年次大会
2007

Dielectric properties of the interface between Si and SiO2
S. Wakui; J. Nakamura; A. Natori
Oral presentation, English, 5th Int. Sympo. on Control of Semiconductor Interfaces
2007

ナノスケールＳｉＯ２／Ｓｉ界面の電子状態と局所誘電特性に及ぼす欠陥の影響
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 特定領域研究「シリコンナノエレクトロニクスの新展開」第２回全体会議
2007

Dielectric discontinuity at a stacking fault in Si(111)
J. Nakamura; A. Natori
Oral presentation, English, 33rd Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-33)
Dec. 2006

Si(111)双晶境界近傍の局所的誘電率変化
中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会第61回年次大会
Mar. 2006

縦型2重量子ドットのスピン結合と磁場制御
枡日向; 山田太一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会第61回年次大会
Mar. 2006

第一原理計算による極薄膜Al/Si界面の検討：界面水素終端の影響
清水共; 名取研二; 中村淳; 名取晃子
Oral presentation, Japanese, 第53回応用物理学関係連合講演会
Mar. 2006

2次元シリコン化合物の原子構造と電子状態
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会第60回年次大会
Mar. 2006

First-principles evaluations of dielectric constants
J. Nakamura; S. Wakui; A. Natori
Oral presentation, English, International Workshop on Nano CMOS
Jan. 2006

First-principles calcualtion of dielectric constants for ultrathin SiO2 films
S. Wakui; J. Nakamura; A. Natori
Oral presentation, English, 33rd Conference on the Physics and Chemistry of Semiconductor interfaces (PCSI-33)
Jan. 2006

Dielectric discontinuity at a twin boundarary in Si(111)
J.Nakamura; A.Natori
Oral presentation, English, ICPS-28
2006

Carge correlation and spin coupling in double quantum dots
H.Masu; J.Nakamura; A.Natori
Oral presentation, English, ICPS-28
2006

Dielectric properties for ultra-thin films of the polytypes of SiC
J. Nakamura; A. Natori
Oral presentation, English, 表面科学会,ISSS-4
Dec. 2005

Controlling the spin coupling in double quantum dots
H. Masu; J. Nakamura; A. Natori
Oral presentation, English, 表面科学会,ISSS-4
Dec. 2005

First-principles calculations of dielectric constants for ultrathin SiO2 films
S. Wakui; J. Nakamura; A. Natori
Oral presentation, English, 表面科学会,ISSS-4
Dec. 2005

Electronic and magnetic properties of BNC ribbons
T. Nitta; J. Nakamura; A. Natori
Oral presentation, English, 4th International Symposium on Surface Science and Nanotechnology (ISSS-4)
Nov. 2005

Atomic scale mechanism of friction
S. Wakunami; J. Nakamura; A. Natori
Oral presentation, English, 表面科学会,ISSS-4
Nov. 2005

Structural stabilities and electronic properties of planar Si Compounds
M. Hirayama; J. Nakamura; A. Natori
Oral presentation, English, 表面科学会,ISSS-4
Nov. 2005

First-principles calculations on adsorption and diffusion of oxygen atoms on graphen sheets
J. Ito; J. Nakamura; A. Natori
Oral presentation, English, 表面科学会,ISSS-4
Nov. 2005

First-principles evaluations of dielectric constants for ultra-thin semiconducting films
J. Nakamura; A. Natori
Oral presentation, English, 23rd European Conference on Surface Science (ECOSS-23)
Sep. 2005

Friction mechanism in atomic-scale
S. Wakunami; J. Nakamura; A. Natori
Oral presentation, English, ECOSS-23
Sep. 2005

Ga- and As-rich Limit of surface reconstruction on GaAs(001)
A. Ohtake; P. Kocan; K. Seino; W. G. Schmidt; J. Nakamura; A. Natori
Oral presentation, English, ECOSS-23
Sep. 2005

グラフェンシートの酸素吸着と拡散の第一原理計算
伊藤潤; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会2005年秋季大会
Sep. 2005

SiC多形超薄膜の誘電特性
中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会2005年秋季大会
Sep. 2005

原子レベルの摩擦機構
湧波信弥; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会2005年秋季大会
Sep. 2005

SiO2超薄膜の誘電特性
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会2005年秋季大会
Sep. 2005

Spatial variation in dielectric constant at surfaces of hydrogen-terminated ultra-thin Si(111) films
J. Nakamura; A. Natori
Oral presentation, English, 8th International Conference on the Structure of Surfaces (ICSOS-8)
Jul. 2005

Electronic and magnetic properties of BNC ribbons
T. Nitta; J. Nakamura; A. Natori
Oral presentation, English, ICSOS-8
Jul. 2005

Two types of surface atomic structures for As-rich GaAs(001)-c(4x4)
A. Ohtake; P. KOcan; J. Nakamura; A. Natori; N. Koguchi
Oral presentation, English, ICSOS-8
Jul. 2005

Friction in atomic scale
S. Wakunami; J. Nakamura; A. Natori
Oral presentation, English, 13th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techiniques (STM05)
Jul. 2005

第一原理計算を用いた誘電率評価方法の開発とその超薄膜への応用
中村淳; 涌井貞一; 名取晃子
Oral presentation, Japanese, シンポジウム「来るべきナノCMOS時代に向けての挑戦とその課題」
Apr. 2005

第一原理計算による超薄膜Al/Si(001)界面の検討：Si面方位依存性
清水共; 名取研二; 中村淳; 名取晃子
Oral presentation, Japanese, 第52回応用物理学関係連合講演会
Mar. 2005

BNリボンの磁性II
新田敏浩; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会第60回年次大会
Mar. 2005

Dielectric properties of ultra-thin SiC films
J. Nakamura; H. Ozawa; A. Natori
Oral presentation, English, 32rd Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-32)
Jan. 2005

Structural stability for Si(001) and Ge(001) in external electric fields
J.Nakamura; A.Natori
Oral presentation, English, The 12th Int. Colloquim on Scanning Probe Microscopy (ICSPM-12)
2004

Energy barrier for dimer flipping at the Si(001)-2x1 surface in external electrostatic fields
J.Nakamura; A.Natori
Oral presentation, English, 27th Int. Conf. on the Physics of Semiconductors (ICSPS-27)
2004

Dielectric properties of ultra-thin films
J.Nakamura; S.Ishihara; H.Ozawa; A.Natori
Oral presentation, English, ICPS-27
2004

Atomic scale friction mechanism
S.Wakunami; J.Nakamura; A.Natori
Oral presentation, English, 16th Int. Vacuum Congress (IVC-16)
2004

Energy barrier for dimer flipping at Si(001)-2x1 in external electric fields
J.Nakamura; A.Natori
Oral presentation, English, IVC-16
2004

Si/SiO2のバンドオフセットの第一原理計算
渡会雅敏; 中村淳; 名取晃子
Oral presentation, Japanese, 第２２回表面科学講演大会
Nov. 2002

Electronic properties in nano-structures
A. Natori
Others, English, The School on simulation and modeling physics
Nov. 2002

SiO2超薄膜のトンネル特性
渡会雅敏; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会２００２年秋季大会
Sep. 2002

２重量子ドットの多粒子状態
瀬下裕也; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会２００２年秋季大会
Sep. 2002

Dynamics of c(4x2) phase-transition in Si(100) surafces
M. Osanai; A. Natori; J. Nakamura
Oral presentation, English, 11th Int. Conf. on Solid Films and Surfaces
Jul. 2002

Structural stability of the Ge/Si(113)-2x2 surface
J. Nakamura; A. Natori; Z. Zhang; K. Sumitomo; H. Omi; T. Ogino
Others, English, 第5回成長表面・界面の動的挙動と原子スケールシミュレーション研究会
Mar. 2002

Ge/Si(113)-2x2の再構成表面構造
住友弘二; Z. Zhang; 中村淳; 尾身博雄; 名取晃子; 荻野俊郎
Oral presentation, Japanese, 第49回応用物理学関係連合講演会
Mar. 2002

不均一表面層の2端子間2次元電流分布
名取晃子; 伊藤哲朗; 中村淳
Oral presentation, Japanese, 日本物理学会第57回年次大会
Mar. 2002

Si(100)面のダイマーバックリングダイナミクス
長内理尚; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会 第57回年次大会
Mar. 2002

Ｓｉ／ＳｉＯ２のバンドオフセットの第一原理計算
渡会雅敏; 中村淳; 名取晃子
Oral presentation, Japanese, 第８回「極薄シリコン酸化膜の形成・評価・信頼性」研究会
2002

２重量子ドットのスピン結合制御
瀬下裕也; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会第５８回年次大会
2002

Atomic structure of Ge/Si(113)-2x2 reconstruction
Z. Zhang; K. Sumitomo; J. Nakamura; H. Omi; A. Natori; T. Ogino
Oral presentation, English, 9-th Int. Colloq. Scanning Probe Microscopy and Asian SPM(4)
Dec. 2001

Ge/Si(113)-2x2表面の構造安定性
中村淳; Z. Zhang; 住友弘二; 尾身博雄; 荻野俊郎; 名取晃子
Oral presentation, Japanese, 日本物理学会2001年秋季大会
Sep. 2001

Dimer buckling dynamics in the vicinity of missing dimers on Si(100) surfaces
M. Osanai; A. Natori
Oral presentation, English, 13-th Int. Conf. Crystal Growth/11-th Int. Conf. Vapor Growth and Epitaxy
Jul. 2001

In-phase step wandering on vicinal Si(111) surfaces
A. Natori; N. Suga
Oral presentation, English, 8-th Int. Conf. Formation of Semiconductor Interfaces
Jun. 2001

Photouminescence of charged magneto-excitons in InAs single quantum dots
A. Natori; S. Ohnuma; N. H. Quang
Oral presentation, English, 8-th Int. Conf. Formation of Semiconductor Interfaces
Jun. 2001

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