理学修士, 東京都立大学

理学博士, 東京都立大学

Mar. 1967
Tokyo Metropolitan University, Graduate School, Division of Natural Science, 応用物理学

Mar. 1964
Tokyo Metropolitan University, Graduate School, Division of Natural Science, 応用物理学専攻

Mar. 1962
The University of Electro-Communications, Faculty of Electro Communications, 電波工学科

Perpendicular magnetic anisotropy of Co-TiN composite film with nano-fiber structure
CC Chen; M Hashimoto; J Shi; Y Nakamura; O Nittono; PB Barna
JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 93, 10, 6273-6278, May 2003, Peer-reviwed, Co-Ti-N films have been prepared by sputter deposition of Co and Ti in Ar+N-2 atmosphere. Upon thermal anneal at elevated temperatures, Co (face-centered cubic) and TiN were formed in the film and separated from each other. Fiber-like microstructure developed with Co nano-fibers vertical to the substrate surface, and with their lateral size being less than 10 nm. The magnetic anisotropy of such films depends strongly on the film thickness. The Co-TiN films with their thickness above 100 nm show perpendicular magnetic anisotropy, which is explained in terms of shape anisotropy. Considering their microstructure, it is concluded that the diameter to length ratio of Co nano-fibers is an important factor controlling the magnetic anisotropy. For the Co-TiN film to show perpendicular magnetic anisotropy, the diameter to length ratio has to be smaller than 0.07 according to the experimental results. TiN in the films plays an important role in separating Co nano-fibers and thus to reduce the lateral magnetic interaction among them. The nano-scale nature and perpendicular magnetic anisotropy of the Co-TiN nanocomposite film make it a very promising candidate for future ultrahigh magnetic recording media. (C) 2003 American Institute of Physics.
Scientific journal, English

Synthesis of Fe2W by low pressure laser spraying
Yoji Isshiki; Ji Shi; Hisashi Nakai; Mituru Hashimoto
Surface and Coatings Technology, 151-152, 325-328, 01 Mar. 2002, Peer-reviwed, Fe2W is the Laves type intermetallic compound with hexagonal crystal structure and is known to be a type of hard alloy. The low-pressure laser spraying (LPLS) method was applied to synthesize Fe2W clad layers on a mild steel substrate. Structure and atomic composition of surface clad layers were analyzed by X-ray diffraction and energy dispersive X-ray spectroscopy, respectively. When the substrate was exposed to a laser energy density of 36 W / mm2, the tungsten concentration of clad layers was estimated to be 20 wt.% at maximum with a microhardness of 240 Hv. The microhardness remarkably increased with heat treatment at 973 K in vacuum, suggesting that the Fe2 W phase was formed with heat treatment. © 2002 Elsevier Science B.V. All rights reserved.
Scientific journal, English

Effects of substrate-bias on the structure of sputter-deposited Co-Pt film
T Shinmitsu; J Shi; M Hashimoto
SURFACE & COATINGS TECHNOLOGY, ELSEVIER SCIENCE SA, 151, 55-58, Mar. 2002, Peer-reviwed, Co-Pt films were deposited onto (001)-oriented Si substrates by d.c.-sputtering method, and the effects of substrate bias on the composition and structure of the Co-Pt films were investigated. Co-Pt films deposited at room temperature are composed of a disordered Co-Pt phase of face-centered cubic structure. The crystalline quality of the Co-Pt film is improved significantly with increasing the substrate bias up to - 150 V Moreover, the composition of the films is also affected by the substrate bias, Co content decreases with increasing the substrate bias. This phenomenon is explained in terms of preferential resputtering of Co by the incident particles generated by the bias voltage. (C) 2002 Elsevier Science B.V. All rights reserved.
Scientific journal, English

Preparation of Co-Ti-N nanocomposite films
CC Chen; J Shi; M Hashimoto
SURFACE & COATINGS TECHNOLOGY, ELSEVIER SCIENCE SA, 151, 59-62, Mar. 2002, Peer-reviwed, In this work, Co-Ti-N nanocomposite films were prepared by the reactive sputtering method. Depending on N-2 partial pressure in the Ar and N-2 mixture during sputter deposition, two different structures were formed. At an N-2 partial pressure of 6.7 x 10(-4) Pa, the as-deposited film is composed of TiN and an amorphous CoTiN phase. After thermal annealing at 400 degreesC, Co was separated out to form a Co-TiN structure. The saturation magnetization increases substantially after thermal annealing. On the other hand, when the film was deposited at an N-2 partial pressure of 6.7 x 10(-3) Pa, both Ti and Co were nitrided. A complex nitride of Ti and Co, (TiCo)N was formed in the film. In this circumstance, thermal annealing at 400 degreesC had almost no effect on the structure and magnetic properties of the film. (C) 2002 Elsevier Science B.V. All rights reserved.
Scientific journal, English

Synthesis of Fe2W by low pressure laser spraying
Y Isshiki; J Shi; H Nakai; M Hashimoto
SURFACE & COATINGS TECHNOLOGY, ELSEVIER SCIENCE SA, 151, 325-328, Mar. 2002, Peer-reviwed, Fe2W is the Laves type intermetallic compound with hexagonal crystal structure and is known to be a type of hard alloy. The low-pressure laser spraying (LPLS) method was applied to synthesize Fe2W clad layers on a mild steel substrate. Structure and atomic composition of surface clad layers were analyzed by X-ray diffraction and energy dispersive X-ray spectroscopy, respectively. When the substrate was exposed to a laser energy density of 36 W/mm(2), the tungsten concentration of clad layers was estimated to be 20 wt.% at maximum with a microhardness of 240 Hv. The rnicrohardness remarkably increased with heat treatment at 973 K in vacuum, suggesting that the Fe2W phase was formed with heat treatment. (C) 2002 Elsevier Science B.V. All rights reserved.
Scientific journal, English

Preferential resputtering phenomenon on the surface of (100)-oriented Ni-Pt films: Effect of substrate bias during sputter deposition
J Shi; R Zhou; M Hashimoto
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, AMER INST PHYSICS, 19, 6, 2979-2981, Nov. 2001, Peer-reviwed, Effects of substrate bias during sputter deposition on the structure and composition of Ni-Pt/MgO(100) films were investigated. Ni-Pt films deposited at 220 degreesC are composed of a Ni-Pt substitutional solid solution of face-centered cubic structure. All the films are single crystalline with identical crystallographic orientation with the substrate, regardless of the substrate bias. However, the composition of the films was significantly affected by the substrate bias: Pt content increased Zn with increasing the substrate bias within the investigated range. This phenomenon is explained in terms of the preferential resputtering of Ni by impinging ions and neutrals generated by the substrate bias. Furthermore, the crystallinity of the films was also affected by the substrate bias. (C) 2001 American Vacuum Society.
Scientific journal, English

Preferential resputtering phenomenon on the surface of (100)-oriented Ni-Pt films: Effect of substrate bias during sputter deposition
J. Shi; R. Zhou; M. Hashimoto
Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films, 19, 6, 2979-2981, Nov. 2001, Peer-reviwed, The phenomenon of preferential resputtering was used to investigate the effects of substrate bias on the structure and composition of thin film Ni-Pt alloys during sputter deposition. The Pt content was found to increase with an increase in the substrate bias. The substrate bias also affected the crystallinity of the Ni-Pt films. The resputtering of adatoms dominated the resputtering process because of low sputtering yield for sputtering a solid surface.
Scientific journal, English

Growth and structure of Ni films radio frequency sputter deposited on GaAs(001) covered with Ti film
K Makihara; JP Yang; J Shi; M Hashimoto; S Maruyama; A Barna
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, AMER INST PHYSICS, 19, 5, 2494-2498, Sep. 2001, Peer-reviwed, A study is made of the growth mode of Ni films on the GaAs(001) substrates at 300 degreesC by rf magnetron sputtering. To restrain chemical reaction at the Ni/GaAs interface Ti films thinner than 700 nm are inserted into the interface. Thin film x-ray diffraction as well as normal x-ray diffraction, cross sectional transmission electron microscopy, and atomic force microscopy are used to characterize the structure of the Ni/Ti/GaAs(001) system. Electrical properties are studied by measuring resistivity and its temperature coefficient at temperature lower than 300 K. Growth structure of Ti films depends on substrate temperature. The 00.1-textured growth without compound formation is completed optimally at 300 degreesC. The, films consist of columnar grains 100-200 nm in diameter. The columnar growth of the Ti film is perfectly succeeded by the Ni film with the growth mode of Ni(111)//Ti(00.1)//GaAs(001) and Ti(11.0)//GaAs(110) where Ni(001) is nearly parallel to GaAs(111). No solid reaction between Ni, Ti, and GaAs is detected. Without the Ti interlayer the Ni film is depleted by formation of the compound NiAS(2), resulting in an abrupt decrease of temperature coefficient of resistivity. In conclusion, it is confirmed that the crystallographically well orientated Ni film can grow on the GaAs(001) through the Ti interlayer without any compound formation at the interfaces. (C) 2001 American Vacuum Society.
Scientific journal, English

Structural and electrical properties of Cu films by dc biased plasma-sputter-deposited on MgO(001)
H Qiu; Y Tian; M Hashimoto
JOURNAL OF UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING, JOURNAL OF UNIV OF SCIENCE AND TECHNOLOGY BEIJING, 8, 3, 207-209, Sep. 2001, Peer-reviwed, Cu films of 30 nm and 15 nm thick were deposited on MgO(001) substrates at 185 degreesC by dc plasma-sputtering at 1.9 kV and 8 mA in pure Ar gas. A dc bias voltage V-s of 0 V or -80 V was applied to the substrate during deposition. Structural and electrical properties have been investigated by cross-sectional transmission electron microscopy (XTEM), high resolution XTEM (XHRTEM) and by measuring temperature coefficient of electrical resistance (TCR; eta) in the temperature interval of - 135 degreesC to 0 degreesC. The Cu film is polycrystalline at V-s= 0 V while it epitaxially grows with Cu(001) parallel to MgO(001) and Cu[010] parallel to MgO[010] at V-s = -80 V. However, the latter has a very rough surface. The change of eta with film thickness and V-s is interpreted in terms of the structure change. Misfit dislocations and lattice expansion are induced along the MgO surface to relax the strain energy due to the lattice mismatch between Cu and MgO.
Scientific journal, English

Growth and structure of Ni films radio frequency sputter deposited on GaAs(001) covered with Ti film
Kenji Makihara; Jiping Yang; Ji Shi; Mituru Hashimoto; Susumu Maruyama; Arpad Barna
Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films, 19, 5, 2494-2498, Sep. 2001, Peer-reviwed, Radio frequency (rf) magnetron sputtering was used to study the growth mode of Ni films, covered with Ti films, on the GaAs(001) substrates at 300°C. Ti films were inserted into the interface to restrain the chemical reactions at the Ni/GaAs interface. The electrical properties of the films were studied by measuring resistivity and its temperature coefficient below 300 K.
Scientific journal, English

Effects of substrate-bias on the structure of sputter-deposited Co-Pt film
Tatsuro Shinmitsu; Ji Shi; Mituru Hashimoto
C-26, Jun. 2001, Peer-reviwed
International conference proceedings, English

Preparation of Co-Ti-N magnetic nanocomposite films
Changchuan Chen; Ji Shi; Mituru Hashimoto
C-26, Jun. 2001, Peer-reviwed
International conference proceedings, English

Growth and characterization of CoSi2 films on Si (1 0 0) substrates
F. Takahashi; T. Irie; J. Shi; M. Hashimoto
Applied Surface Science, Elsevier Science Publishers B.V., 169-170, 315-319, 15 Jan. 2001, In the present work, a special solid phase epitaxy method has been adapted for the preparation of CoSi2 film. This method includes an epitaxial growth of Co films on Si(1 0 0) substrate, and in situ annealing of the Co/Si films in vacuum. It has been found that at the substrate temperature of 360 °C, fcc cobalt film grows epitaxially on the Si(1 0 0) surface. The crystallographic orientation relations between fcc Co film and Si substrate determined from the electron diffraction result are: (0 0 1) Co∥(0 0 1)Si,[100] Co∥[1 1 0]Si. Upon annealing at temperatures range from 500 to 600 °C, Co film reacts with Si substrate and transforms into CoSi2. The CoSi2 films prepared by this way are characterized by XTEM, XPS and AFM.
Scientific journal, English

Structure and electrical property of platinum film biased dc-sputter-deposited on silicon
Daisuke Kojima; Kenji Makihara; Ji Shi; Mituru Hashimoto
Applied Surface Science, 169, 170, 320-324, 15 Jan. 2001, Peer-reviwed, A study is made by Cross-sectional transmission electron microscopy (X-TEM) and by measuring electrical resistivity ρ as a function of temperature (≤300 K), of structure and electrical property of Pt films equal to or thinner than 35 nm which are deposited on Si(0 0 1) at 200 °C by dc-sputtering at -2.7 kV in Ar gas. A bias voltage Vs of 0 or -90 V is applied to the substrate during deposition. As deposited Pt films retain polycrystalline structure with PtSi compound formation and inter-atomic diffusion at the Pt/Si interface both of which are suppressed with application of Vs and the ρ values of them decrease with an increase in temperature T from 50-150 to 300 K depending on both Vs and thickness. After annealed at 450 °C for 30 min in 10-5 Pa, the films consist mainly of PtSi at Vs = 0 V and still mainly of Pt at Vs = -90 V while the T range where negative T coefficient of ρ(n-TCR) is observed is localized between 100 and 140 K for the 33 nm thick film prepared at Vs = 0 V but diffused away from 70 to 220 K for the 35 nm thick film prepared at Vs = -90 V. The application of Vs is effective to determine the structural and electrical properties of Pt films dc-plasma-sputter deposited on Si(0 0 1) through controlling compound formation and inter-atomic diffusion at the interface.
Scientific journal, English

Initial growth structure of Ni1-xFex (x = 0.6-0.8) films dc-biased plasma-sputter-deposited on Ni/MgO(0 0 1), and on Fe/MgO(0 0 1)
Rong Zhou; Jiping Yang; Yoshimasa Amatatsu; Mituru Hashimoto
Applied Surface Science, Elsevier Science Publishers B.V., 169-170, 396-400, 15 Jan. 2001, Peer-reviwed, Cross sectional and plane-view transmission electron microscopy (X- and PV-TEM) were used to investigate the initial growth phase of 5, 10, 20 and 40 nm thick Ni1-xFex (x = 0.6-0.8) films, prepared on MgO(0 0 1) covered with a buffer layer of Fe or Ni as well as on naked MgO(0 0 1). The 100 nm thick buffer layers of Fe and Ni were pre-grown on MgO(0 0 1). All of Ni0.20Fe0.80, Ni0.40Fe0.60, Fe and Ni films could be epitaxially grown at 250 °C by dc-biased plasma sputtering at 2.9 kV in pure Ar gas. The films of Ni0.20Fe0.80 and Ni0.40Fe0.60 were grown in their own stable phase, bcc and fcc on MgO(0 0 1), respectively. However, Ni0.20Fe0.80 film could be grown in fcc phase pseudomorphic with Ni(0 0 1) up to 20 nm thick on Ni/MgO(0 0 1), while Ni0.40Fe0.60 film in bcc phase pseudomorphic with Fe(0 0 1) up to 10 nm thick on Fe/MgO(0 0 1). With increasing thickness, their growth phases transformed into their own stable phases. Whether or not the pseudomorphic phase may be induced and what its critical thickness may be should depend primarily on the lattice misfit between the crystal planes in contact. The growth mode of Ni0.40Fe0.60 film was investigated more in details to be compared with the simulations of the average strain energy versus thickness and with those of the critical thickness of the pseudomorphic films versus the lattice misfit between the contacted crystal planes.
Scientific journal, English

Growth mode of Pt1-xNix films biased dc-sputter-deposited on MgO(0 0 1)
Yoshimasa Amatatsu; Kenji Makihara; Ji Shi; Jiping Yang; Mituru Hashimoto
Applied Surface Science, Elsevier Science Publishers B.V., 169-170, 401-404, 15 Jan. 2001, Peer-reviwed, A study is made by TEM, XRD and by measuring electrical/magnetic properties, of growth mode and properties of Pt1-xNix alloy films deposited on MgO(0 0 1) at 250 °C by dc-sputtering at 2.5-2.7 kV in Ar. A bias voltage Vs≤-160 V was applied to the substrate during deposition. It was confirmed that the Pt film was polycrystalline with the texture of Pt(1 1 1)/MgO(0 0 1) while the films of Pt0.14Ni0.86 and Pt0.19Ni0.81 were epitaxially grown with Pt-Ni(0 0 1)[1 0 0]/MgO(0 0 1)[1 0 0] similarly to the case of Ni/MgO(0 0 1). Thus the growth mode transformation between Pt-Ni(1 1 1)/MgO(0 0 1) and Pt-Ni(0 0 1)/MgO(0 0 1) may be induced at x less than 0.81 for Pt1-xNix alloy films. The temperature coefficient of resistance TCR from 100 to 300 K of Pt0.14Ni0.86 films was estimated to be 0.0044-0.0053 K-1 and saturation magnetization at 300 K to be 1.7-3.2 kG, respectively, while TCR of Pt films was estimated to be 0.0035-0.0048 K-1.
Scientific journal, English

Growth behavior and microstructure of Co-Ge films prepared on GaAs substrate by high-temperature sequential deposition
J. Shi; D. Ishii; M. Hashimoto; A. Barna; P. B. Barna; Y. Haga; O. Nittono
Journal of Crystal Growth, Elsevier Science B.V., 222, 1-2, 235-242, 2001, Peer-reviwed, The growth behavior and microstructure of Co-Ge/GaAs films prepared by the high-temperature sequential deposition (HTSD) method have been investigated using X-ray diffraction, cross-sectional transmission electron microscopy, X-ray photoelectron sepectroscopy and atomic force microscopy. Three germanides were formed in the films at temperatures ranging from 300 to 600 °C. Polycrystalline CoGe with poor crystallinity was formed at 300 °C. On the other hand, epitaxial Co5Ge7 were formed at 400 and 500 °C. The epitaxial orientations for the Co5Ge7 films formed at 400 and 500 °C are [0 0 1] (1 0 0) Co5Ge7∥[1 1 0] (001) Ge∥[1 1 0] (0 0 1) GaAs and [1 0 0] (0 0 1) Co5Ge7∥[1 1 0] (0 0 1) Ge∥[1 1 0] (0 0 1) GaAs, respectively. Then, at 600 °C polycrystalline CoGe2 was formed in the film. Based on the experimental results, the solid-state reaction mechanism for Co-Ge binary system and the epitaxial growth mode for Co5Ge7 are discussed.
Scientific journal, English

Growth of CoSi2 films on Si (100) substrates by a two-step method
Ji Shi; Tetsuji Irie; Fumitoshi Takahashi; Mituru Hashimoto
Thin Solid Films, Elsevier Sequoia SA, 375, 1-2, 37-41, 31 Oct. 2000, Peer-reviwed, In the present work, CoSi2 films with good crystallinity were prepared on Si (100) substrate by a two-step method. This method includes an epitaxial growth of Co films on the Si (100) substrate, and in-situ annealing of the Co/Si film in vacuum. First, Co films were deposited on Si (100) substrate by electron beam evaporation with the substrate temperature ranging from room temperature to 360 °C. The structure of these Co/Si films was characterized by cross-sectional transmission electron microscopy (XTEM) and atomic force microscopy (AFM). It has been found that when deposited on substrate at temperatures below 360 °C, Co polycrystalline films are formed with an average grain size less than 30 nm. However, when raising the substrate temperature to 360 °C, fcc cobalt film grows epitaxially on the Si (100) substrate. The epitaxial orientation is (001) Co//(001) Si, [100] Co//[110] Si as determined from the electron diffraction results. AFM images of such film show many square facets on the surface of the Co films, the average size of these facets being approximately 100×100 nm. The epitaxial Co films were annealed in situ under vacuum at temperatures ranging from 500 °C to 600 °C. The Co film reacted with Si substrate and was transformed into CoSi2. The crystalline quality of the CoSi2 films was found to be improved compared with CoSi2 films prepared using polycrystal precursors.
Scientific journal, English

Study of the interfacial reactions between platinum films and silicon substrates
Tatsuro Shinmitsu; Ji Shi; Mituru Hashimoto
59, Oct. 2000, Peer-reviwed
International conference proceedings, English

Characterization of the surfaces and interfaces of magnetic Co-Ti-N films
Changchuan Chen; Ji Shi; Mituru Hashimoto
151, Oct. 2000, Peer-reviwed
International conference proceedings, English

Adhesion of NiCu films DC biased plasma-sputter-deposited on MgO(001)
Hong Qiu; Mituru Hashimoto
Journal of University of Science and Technology Beijing, 7, 3, 214-217, Sep. 2000, Peer-reviwed
Scientific journal, English

Epitaxial growth and physical properties of Permalloy film deposited on MgO(001) by giased dc plasma sputtering
Masaki Ishino; Jiping Yang; Kenji Makihara; Ji Shi; Mituru Hashimoto
Journal of Vacuum Science and Technology, A18, 5, 2339-2343, Sep. 2000, Peer-reviwed
Scientific journal, English

Epitaxial growth and physical properties of permalloy film deposited on MgO(001) by biased dc plasma sputtering
Masaki Ishino; Jiping Yang; Kenji Makihara; Ji Shi; Mituru Hashimoto
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, American Inst of Physics, 18, 5, 2339-2343, Sep. 2000, Peer-reviwed, Biased direct current plasma sputtering was used to deposit permalloy films on magnesium oxide (MgO) (001) substrates. The initial growth structure and physical properties of epitaxial films were investigated using XPS, RHEED, TEM and by measuring electrical and magnetic properties. Misfit dislocations were formed in isolated islands along the MgO 100 direction with lattice expansion along the same direction. The initial growth kinetics concerning the misfit dependence on thickness is simulated on the basis of the van der Merwe's model.
Scientific journal, English

Initial growth structure of Ni0.30Fe0.70 films dc-biased plasma-sputter-deposited on MgO(001), MgO(110), MgO(111) and on MgO(001) covered with Fe or Permalloy
JP Yang; Y Amatatsu; M Hashimoto; A Barna; PB Barna
THIN SOLID FILMS, ELSEVIER SCIENCE SA, 371, 1-2, 47-52, Aug. 2000, Peer-reviwed, Cross-sectional and plane-view transmission electron microscopy (X- and PV-TEM) were used to investigate the initial growth phase of 5-, 10-, 20- and 40-nm-thick Ni0.30Fe0.70 films, which were prepared on MgO(001), MgO(110), MgO(111) and on MgO(001) covered with a buffer layer. The 10-nm-thick BCC-Fe buffer layers and the 1.7- or 5.1-nm-thick Permalloy (FCC-Ni0.70Fe0.30) buffer layers were pre-grown on MgO(001). All of Ni0.30Fe0.70, Fe and Permalloy films were prepared at the optimum epitaxial growth condition by de-biased plasma sputtering at 2.9 kV in pure Ar gas. Saturation magnetization and coercive force of some samples were measured at r.t. using a vibration sample magnetometer (VSM). The Ni0.30Fe0.70 films were grown in the BCC phase with Ni-Fe(001)[110]//MgO(001)[100] up to 5 nm thickness on MgO(001) while up to 10 nm on Fe/MgO(001). With increasing thickness, the growth phase transformed into the stable Invar phase, i.e. into the FCC phase with Ni-Fe(001)[100]//MgO(001)[100]. The Ni0.30Fe0.70 FCC phase was grown from the initial growth stage on MgO(110), MgO(111) as well as on Pemalloy/MgO(001) substrates. Whether or not the Ni0.30Fe0.70 film can initially grow in the BCC phase depends primarily on the lattice misfit between the crystal planes in contact. The transformation of the growth phase from BCC to FCC was also confirmed by the thickness dependence of magnetic properties. Finally, the stability of initial growth structures for the present sample systems was simulated in terms of the lattice misfit between adjoining lattice planes. (C) 2000 Elsevier Science S.A. All rights reserved.
Scientific journal, English

The interaction between platinum films and silicon substrates: Effects of substrate bias during sputtering deposition
J Shi; D Kojima; M Hashimoto
JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 88, 3, 1679-1683, Aug. 2000, Peer-reviwed, The reactions between platinum and silicon, both during platinum deposition at elevated temperature and during a thermal annealing process, have been investigated using x-ray diffraction, cross-sectional transmission electron microscopy, and x-ray photoelectron spectroscopy. It has been found that sputtering deposition of platinum on a silicon substrate at 200 degrees C results in the formation of PtSi at the Pt-Si interface. But the reaction cannot fully proceed at this temperature for a platinum film with a thickness of 35 nm. Further annealing at 450 degrees C causes the platinum film to transform to PtSi completely. A substrate bias of -90 V during sputtering deposition leads to the formation of platinum films with larger columnar grains, instead of finer grains as being formed without substrate bias. In such a case, oxygen diffusion toward the interface was enhanced through the boundaries of these columnar grains, and this results in an accumulation of oxygen and oxide formation at the interface. As a result, the reaction between platinum and silicon was inhibited during the further annealing process for the Pt/Si films deposited with substrate bias. (C) 2000 American Institute of Physics. [S0021-8979(00)06715-3].
Scientific journal, English

Epitaxial growth structure and physical properties of Fe film biased dc-plasma sputter deposited on MgO(001)
CC Chen; JP Yang; H Nakai; M Hashimoto
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, AMER INST PHYSICS, 18, 3, 819-822, May 2000, Peer-reviwed, One hundred-nm-thick Fe film has been deposited on MgO(001) substrate at 250 degrees C by biased de-plasma sputtering at 2.9 kV in Ar gas. A dc bias voltage V-s between 0 and -160 V was applied to the substrate during deposition. Reflection high energy electron diffraction, x-ray diffraction, cross sectional transmission electron microscopy (XTEM) and high resolution XTEM were used to investigate the structure of the films. Electrical resistivity at room temperature was measured by four-point probe method. Saturation magnetization of the films at room temperature was measured using a vibration sample magnetometer. As a result, when V-s = -140 V the Fe film could be epitaxially grown with Fe(001)[110]//MgO(001)[100] while the film retained a polycrystalline structure when V-s was higher or lower than -140 V. The minimum electrical resistivity and the maximum saturation magnetization were achieved at V-s = -140 V consistent with the result of the growth structure. In conclusion, when V-s = - 140V the Fe film can be epitaxially grown with the lower defect density under the bombardment of energetic Ar particles accelerated by V-s to increase the mobility of Fe adatoms and to resputter impurity species during the film formation. (C) 2000 American Vacuum Society. [S0734-2101(00)02903-1].
Scientific journal, English

Epitaxial growth structure and physical properties of Fe film biased dc-plasma sputter deposited on MgO(001)
Chang Chuan Chen; Jiping Yang; Hisashi Nakai; Mituru Hashimoto
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, American Inst of Physics, 18, 3, 819-822, May 2000, Peer-reviwed, The growth structure and physical properties of Fe films dc biased plasma sputter deposited on MgO(001) as a function of Vs were investigated to determine the Vs value optimum for the epitaxial growth of Fe film. Reflection high energy electron diffraction (RHEED), x ray diffraction (XRD), cross sectional transmission electron microscopy (XTEM), and high resolution XTEM were utilized. The most optimum epitaxial growth condition were discussed.
Scientific journal, English

Microstructure, microhardness, composition, and corrosive properties of stainless steel 304
Y. Isshiki; J. Shi; H. Nakai; M. Hashimoto
Applied Physics A: Materials Science and Processing, Springer-Verlag GmbH & Company KG, 70, 4, 395-402, Apr. 2000, Laser surface alloying (LSA) with silicon was conducted on austenitic stainless steel 304. Silicon slurry composed of silicon particle of 5 μm in average diameter was made and a uniform layer was supplied on the substrate stainless steel. The surface was melted with beam-oscillated carbon dioxide laser and then LSA layers of 0.4-1.2 mm in thickness were obtained. When an impinged energy density was adjusted to be equal to or lower than 100 W mm-2, LSA layers retained rapidly solidified microstructure with dispersed cracks. In these samples, Fe3Si was detected and the concentration of Si in LSA layer was estimated to be 10.5 wt.% maximum. When the energy density was equal to or greater than 147 W mm-2, cellular grained structure with no crack was formed. No iron silicate was observed and alpha iron content in LSA layers increased. Si concentration within LSA layers was estimated to be 5 to 9 wt.% on average. Crack-free as-deposited samples exhibited no distinct corrosion resistance. The segregation of Si was confirmed along the grain boundaries and inside the grains. The microstructure of these samples changed with solution-annealing and the corrosion resistance was fairly improved with the time period of solution-annealing.
Scientific journal, English

Initial growth characteristic of Ni-Cu films deposited on MgO(001) by D.C. biased plasma sputtering
Hong Qiu; Mituru Hashimoto
Vacuum, 59, 2/3, 411-416, Mar. 2000, Peer-reviwed
Scientific journal, English

Microstructure, microhardness, composition, and corrosive properties of stainless steel 304. II. Low-pressure laser spraying with silicon
Y. Isshiki; J. Shi; H. Nakai; M. Hashimoto
Applied Physics A: Materials Science and Processing, Springer-Verlag GmbH & Company KG, 70, 6, 651-656, 2000, Peer-reviwed, Clad layers of silicon on a SUS 304 substrate were obtained by low-pressure laser spraying (LPLS) to investigate their microstructure, microhardness, composition, and corrosive properties. When an impinged energy density was adjusted to be 32 to 95 W mm-2, the silicon concentration of the surface of clad layers was estimated as 5 to 8 wt.%. For as-prepared layers, their crystal structure was a single phase of alpha-ferrite with no distinct corrosion resistance, because partially segregated Si atoms along the grain boundaries and inside the grains were selectively dissolved in the etching process. After solution-annealing for 2 h, the corrosion resistance was greatly improved in hydrochloric acid solution.
Scientific journal, English

The initial growth structure of Ni1-xFex（x＝0.8－0.6）films dc-biased plasma-sputter-deposited on Ni/MgO（001）and on Fe/MgO（001）
Rong Zhou; Jiping Yang; Yoshimasa Amatatsu; Mituru Hashimoto
J. Vac. Soc., Jpn.（Abstract book of the 1st Vac. and Surf. Sci. Conf. of Asia and Australia（VASSCAA-1）, Sept.8 to 10,1999，Tokyo）, 42, 76, Sep. 1999, Peer-reviwed
International conference proceedings, English

Growth and charcterization of CoSi2 films on Si（100）substrate
Fumitoshi Takahashi; Tetsuji Irie; Ji Shi; Mituru Hashimoto
J. Vac. Soc. Jpn.（Abstract book of the 1st Vac. and Surf. Sci. Conf. of Asia and Australia（VASSCAA-1）, Sept.8 to 10,1999，Tokyo.）, 42, 77, Sep. 1999, Peer-reviwed
International conference proceedings, English

Growth mode of Pt1-xNix films dc-biased plasma-sputter-deposited on MgO（001）
Yoshimasa Amatatsu; Kenji Makihara; Ji Shi; Yiping Yang; Mituru Hashimoto
J. Vac. Soc. Jpn.（Abstract book of the 1st Vac. and Surf. Sci. Conf. of Asia and Australia（VASSCAA-1）, Sept.8 to 10,1999，Tokyo.）．, 42, 77, Sep. 1999, Peer-reviwed
International conference proceedings, English

Stucture and electric property of platinum film plasma-sputter-deposited on silicon
Daisuke Kojima; Kenji Makihara; Ji Shi; Mituru Hashimoto
J. Vac. Soc. Jpn.（Abstract book of VASSCAA-1, Tokyo）, 42, 123, Sep. 1999, Peer-reviwed
International conference proceedings, English

Structural, compositional and piezoelectric properties of the sol-gel Pb(Zr0.56Ti0.44)0.80(Mg1/3Nb 2/3)0.20O3/Pb(Zr0.56Ti 0.44)O3 composite films
K. Sumi; H. Qiu; H. Kamei; S. Moriya; M. Murai; M. Shimada; T. Nishiwaki; K. Takei; M. Hashimoto
Thin Solid Films, Elsevier, 349, 1-2, 270-275, 30 Jul. 1999, Peer-reviwed, A 750 nm-thick PZT-PMN/PZT composite film was prepared by sequential multiple spin-coatings. First, a 375 nm-thick sol-gel Pb(Zr0.56Ti0.44)O3 (PZT) layer was prepared on a Ti/Pt/Ti bottom electrode and then a 375 nm-thick Pb(Zr0.56Ti0.44)0.80(Mg1/3Nb 2/3)0.20O3 (PZT-PMN) layer was prepared on the PZT layer. The structural, compositional and piezoelectric properties of the composite film were investigated by using X-ray diffraction, scanning electron microscopy, cross-sectional transmission electron microscopy and secondary ion mass spectrometry and by measuring the piezoelectric charge constant d31, the piezoelectric voltage constant g31 and the relative permittivity ε. The composite film retains the tetragonal perovskite structure with columnar grains. The lattice of the PZT-PMN layer smoothly connects to that of the PZT layer without forming any interfacial structure. However, the atomic composition, mainly in Mg and Nb, differs between PZT-PMN and PZT layers. The composite film has a higher piezoelectric charge constant d31 as compared with the PZT-PMN and PZT single films. The value of d31 is independent of the sequence of the PZT-PMN and PZT layers. © 1999 Elsevier Science S.A. All rights reserved.
Scientific journal, English

Growth structure and properties of Fe rich Fe-Ni alloy films deposited on MgO(001) by d.c.-biased plasma-sputtering
Jiping Yang; Arpad Barna; Kenji Makihara; Mituru Hashimoto; Peter B. Barna
Thin Solid Films, Elsevier Sequoia SA, 347, 1-2, 85-90, 22 Jun. 1999, Peer-reviwed, Ni-Fe alloy films of about 100 nm in thickness were deposited on MgO(001) substrates at 250°C by d.c. plasma sputtering at 2.5 kV in pure Ar gas by applying a Ni0.3Fe0.7(Invar) or Ni0.2Fe0.8 target. A d.c. bias voltage Vs between 0 and -180 V was applied to the substrate during deposition. The structure and composition of the films were investigated by X-ray photoelectron spectroscopy (XPS), and by cross sectional transmission electron microscopy (XTEM). The resistance, its temperature coefficient TCR (150 to 300K) and saturation magnetization 4πMs at 300 K were measured as a function of Vs. With the use of Ni0.3Fe0.7 target, Ni1-xFex films with x between 0.68 ± 0.03 and 0.73 ± 0.03, can be prepared where x was weakly dependent on Vs. The film is epitaxially grown mainly with FCC-NiFe(001)[010] ∥ MgO(001)[010] accompanied with the initial thin layer of about 5 to 10 nm in thickness with BCC-NiFe(001)[110] ∥ MgO(001)[100] at the interface at Vs values studied. Maximum TCR and minimum resistance are observed between Vs = -120 to -160 V. 4πMs takes greater value at Vs ≥ 120 V. In the case of Ni0.2Fe0.8 target at Vs = -120 V, Ni1-xFex films with x = 0.80 ± 0.03 are entirely grown in a BCC structure with NiFe(001)[110] ∥ MgO(001)[100].
Scientific journal, English

Initial growth characteristic of Ni-Cu films deposited on MgO(001)by D. C. biased plasma sputtering
Qiu Hong; Mituru Hashimoto
59-60, Jun. 1999
International conference proceedings, English

Epitaxial growth mode of Fe-Ni alloy films dc-biased sputter-deposited on MgO（001）
J. Yang; M. Ishino; C. Chen; M. Hashimoto; A. Barna; P. B. Barna
301-302, Jun. 1999, Peer-reviwed
International conference proceedings, English

Phase change during the initial growth of Ni30Fe70(Invar)films deposited on MgO(001)by dc-biased plasma-sputtering
Jiping Yang; Kenji Makihara; Hisashi Nakai; Ji Shi; Mituru Hashimoto; Arpad Barna; Peter B. Barna
Materials Science Forum, 287/288, 118-122, Oct. 1998, Peer-reviwed
International conference proceedings, English

Microhardness, microstructure and composition behavior of stainless steel 304 laser surface alloyed with silicon
Yoji Isshiki; Hisashi Nakai; M. Hashimoto
Materials Science Forum, 287/288, 263-266, Oct. 1998, Peer-reviwed
International conference proceedings, English

Thickness dependence of structural and ferroelectric properties of sol-gel Pb(Zr0.56Ti0.44)0.90(Mg1/3Nb 2/3)0.10O3 films
K. Sumi; H. Qiu; H. Kamei; S. Moriya; M. Murai; M. Shimada; T. Nishiwaki; K. Takei; S. Miyashita; M. Hashimoto
Thin Solid Films, Elsevier, 330, 2, 183-189, 30 Sep. 1998, Peer-reviwed, Sol-gel Pb(Zr0.56Ti0.44)0.90(Mg1/3Nb 2/3)0.10O3 (PZT-PMN) films were prepared onto the Ti/Pt/Ti bottom electrode by multilayer spin coating. The film thickness ranged from 0.22 to 0.88 μm. The Pt top electrodes were deposited on the PZT-PMN films by DC sputtering. The structural and ferroelectric properties of PZT-PMN films were investigated as a function of film thickness by X-ray diffraction (XRD), scanning electron microscopy (SEM), cross-sectional transmission electron microscopy (XTEM), and by measuring the relative permittivity. The film retains the tetragonal perovskite structure with the [111] and [100] preferred orientations perpendicular to the film surface independent of film thickness. The [100] texture increases with increasing film thickness although the [111] texture is always predominant. The film consists of columnar grains. The average grain size is nearly independent of film thickness. The surface layer containing fine grains about 30 nm in diameter is induced on the top of the film. As the film thickness exceeds 0.44 μm, the number of the fine grains decreases remarkably. The crystalline interface layer about 10 nm thick is formed between the film and the bottom electrode. This interface layer is composed of Pt, Pb, Zr, Ti and O, while it is rich in Ti and deficient in Pb and O as compared with the inside of the film. The measured relative permittivity of the film increases with increasing film thickness, following the low permittivity interface model. On the basis of this model, the relative permittivity is estimated to be 3200 for the intrinsic PZT-PMN film, 750 for the surface layer and 50 for the interface layer. © 1998 Elsevier Science S.A. All rights reserved.
Scientific journal, English

Structural and magnetic characterization of Fe-N films prepared by reactive sputtering method
Masahiro Shibata; Ji Shi; Mituru Hashimoto
The 3rd Pacific Rim Inter. Conf. on Advanced Materials and Processing（PRICM 3）［Ed. M. A. Iman, R. DeNale, S. Hanada, Z. Zhong, D. N. Lee, The 3M Soc.］, 999-1003, Jul. 1998, Peer-reviwed
International conference proceedings, English

Interfacial reaction between cobalt and silicon
Tetuji Irie; Ji Shi; Mituru Hashimoto
2629-2633, Jul. 1998, Peer-reviwed
International conference proceedings, English

Electrical property on copper thin film with chromium under-layer
Hisashi Nakai; Kazuyoshi Fudaba; Koujiro Shinzawa; Mituru Hashimoto
Thin Solid Films, Elsevier, 317, 1-2, 202-205, 01 Apr. 1998, Peer-reviwed, Temperature coefficient of resistance (TCR) of as-deposited and annealed atomic beam-deposited polycrystalline copper films of 20 nm with chromium under-layer on SiOx substrate layers was measured. The copper resistivity for various chromium thicknesses was in situ measured during copper deposition. The TCR of the as-deposited films decreases with the chromium thickness to reach a minimum value at about 5 nm. The minimum TCR value for the annealed copper films exists at the chromium thickness equal to about 1 nm. When chromium thickness is less than 2 nm the annealing markedly decreases the TCR of the copper film. © 1998 Elsevier Science S.A.
Scientific journal, English

Synthesis of iron-tungsten alloy on mild steel by laser surface alloying
Yoji Isshiki; Kazunari Mizumoto; Mituru Hashimoto
Thin Solid Films, Elsevier, 317, 1-2, 468-470, 01 Apr. 1998, Peer-reviwed, Laser surface alloying (LSA) was used to synthesize iron-tungsten alloy on mild steel substrate. The slurry of tungsten powder 1.28 μm in average diameter was made and a uniform layer of the slurry was applied onto substrate using thin layer chromatography method. Thickness of powder layer was varied from 0.2 mm to 0.6 mm. The surface was melted using beam oscillated CO2 laser. When impinged energy density is selected to be 93 W mm-2 or 81 W mm-2, the microhardness of the obtained iron-rich alloying layer is 330-430 HV. It increases up to 630 HV through heat treatment in hydrogen atmosphere at a temperature of 873 K for 5 h and successively at 973 K for 5 h. © 1998 Elsevier Science S.A.
Scientific journal, English

Effect of the annealing temperature on structural and piezoelectric properties of the sol-gel Pb(Zr0.56Ti0.44)(0.90)(Mg1/3Nb2/3)(0.10)O-3 films
K Sumi; H Qiu; H Kamei; S Moriya; M Murai; M Shimada; T Nishiwaki; K Takei; S Miyashita; M Hashimoto
THIN SOLID FILMS, ELSEVIER SCIENCE SA, 315, 1-2, 77-85, Mar. 1998, Peer-reviwed, Sol-gel Pb(Zr0.56Ti0.44)(0.90)(Mg1/3Nb2/3)(0.10)O-3 (PZT-PMN) films 1 mu m thick were prepared onto the Ti/Pt/Ti bottom electrodes by six layer spin-coatings. After the first triple layer coatings, a pre-annealing was carried out by rapid thermal process (RTP) with a step pattern of 600 degrees C/5 min to 725 degrees C/1 min. Finally, after the later triple layer coatings, the films were heat-treated by RTP with a step pattern of 650 degrees C/5 min to 900 degrees C/1 min (low-temperature annealing) or 650 degrees C/5 min to 1050 degrees C/1 min thigh-temperature annealing). The structural and piezoelectric properties of the films were investigated by scanning electron microscopy (SEM), cross-sectional transmission electron microscopy (XTEM), and by measuring the piezoelectric charge constant d(31), the piezoelectric voltage constant g(31) as well as the relative permittivity epsilon. The films retain the tetragonal perovskite structure independent of the final annealing temperature. The interlayer caused at the middle depth of the film by the pre-annealing prevents the columnar grain growth through the film. Many fine grains are grown in the interlayer to be rich in Zr and deficient in Pb. The fine grains rich in Zr and deficient in Pb are also formed on the surface of the film. The growth of such the Zr-rich and Pb-deficient phase is effectively suppressed at the low temperature annealing rather than at the high temperature annealing. Thus, the piezoelectric films 1 mu m thick with high d(31), g(31) and epsilon are successfully obtained with the low- temperature annealing. (C) 1998 Elsevier Science S.A.
Scientific journal, English

Structural and electrical properties of Ni-Co films dc-biased plasma-sputter-deposited on MgO(001)
Tatsuya Ohbuchi; Masaki Ishino; Kenji Makihara; Hong Qiu; Mituru Hashimoto; Arpad Barna; Peter B. Barna
Thin Solid Films, Elsevier, 312, 1-2, 32-36, 14 Jan. 1998, Peer-reviwed, Ni-Co alloy films 180-nm thick were deposited on MgO(001) substrates at 280°C by dc plasma-sputtering at 2.5 kV in pure Ar gas using a Ni90Co10 target. A bias voltage, Vs, of 0, - 110, - 140 or - 180 V was applied to the substrate during deposition. The structural and electrical properties of the films were studied as a function of Vs by X-ray photon electron spectroscopy, cross-section transmission electron microscopy and by measurements of the temperature coefficient of electrical resistance (TCR), η, from 150 to 300 K as well as resistivity, ρr, at 10 K. The composition inside the film is uniformly Ni87Co13 with no detectable impurity independently of Vs. The films retain normally the fcc structure epitaxially grown with the NiCo(001)∥MgO(001) and NiCo[010]∥Mg0[010] relationship. Misfit dislocations are induced at the interface to relax the strain energy due to the lattice mismatch between Ni87Co13 and MgO. In addition, the crystal lattice of the film near the interface is expanded. η increases and ρr decreases by applying Vs, suggesting that the application of Vs could improve the crystallinity of the films. © 1998 Elsevier Science S.A.
Scientific journal, English

Microstructure of the clad layer of chromium on to mild steel by low-pressure laser spraying
Y. Isshiki; H. Nakai; M. Hashimoto
Surface and Coatings Technology, Elsevier, 100-101, 1-3, 420-423, 1998, Peer-reviwed, The microstructure of the clad layer of chromium on to a mild steel obtained by low-pressure laser spraying (LPLS) is investigated by cross-sectional electron microscopy (XTEM). When impinged energy density Ei on the substrate is selected to be 64 W mm-2, the clad layer consists of a Cr30Fe70 alloy with a layer-by-layer structure. The thickness of the first sub-layer is 3-7 μm. The crystalline orientation of one sub-layer is markedly different from another, but sub-layers smoothly contact each other. One sub-layer is presumably deposited by one pass of laser spraying. © 1998 Elsevier Science S.A.
Scientific journal, English

Growth sturcture of nickel films on GaAs(001)by d. c biased plasma-sputter-deposition
Jiping Yang; Arpad Barna; Kenji Makihara; Hisashi Nakai; Mituru Hashimoto; Peter B. Barna
Thin Solid Films 319, 319, 118-123, Jan. 1998, Peer-reviwed
Scientific journal, English

FMR, XRD and XHRTEM characterization of stresses in an epitaxial Ni-Cu film prepared on MgO(001) by d.c. biased plasma sputter deposition
Hiroko Maruyama; Hong Qiu; Mituri Hashimoto; Kazuyoshi Fudaba; Hisashi Nakai; Arpad Barna; Peter B. Barna
Thin Solid Films, Elsevier, 299, 1-2, 59-62, 15 May 1997, Peer-reviwed, Ferromagnetic resonance (FMR), X-ray reflection diffraction (XRD) and cross-sectional high-resolution transmission electron microscopy (XHRTEM) are applied to characterize the stresses of the d.c. biased plasma-sputter-deposited Ni97Cu3 films grown epitaxially on a MgO(001) substrate. The FMR study indicates that a homogeneously compressive intrinsic stress and an anisotropic planar stress are simultaneously induced in the film. The latter consists of the part induced during the film formation and the part originated from the magnetocrystalline anisotropy of the Ni-Cu crystal. The compressive stress in the film is also confirmed by the XRD study. The XHRTEM study reveals misfit dislocations generated in the Ni-Cu crystal at the MgO interface relaxing the strain energy due to the lattice mismatch between Ni97Cu3 and MgO crystals and locally induced lattice distortions. In conclusion the stress inside the film is compressive as a whole. © 1997 Elsevier Science S.A.
Scientific journal, English

Structural and electrical properties of Ni-Cu films deposited onto MgO(001) by d.c. biased plasma sputter deposition
H. Qiu; M. Hashimoto; A. Barna; P. B. Barna
Thin Solid Films, Elsevier, 288, 1-2, 171-175, 15 Nov. 1996, Peer-reviwed, Ni-Cu alloy films were deposited onto Mg0(001) substrates at 230°C by d.c. plasma sputtering at 2.7 kV and 8 mA in pure Ar gas using an Ni-10wt.%Cu alloy target. The deposition time was 15 or 30 min. A d.c. bias voltage Vs ranging from 0 to - 140 V was applied to the substrate during deposition. The structure, composition and electrical properties of the films were studied as a function of Vs using cross-sectional transmission electron microscopy (XTEM) and X-ray photoelectron spectroscopy (XPS), and measurements of the temperature coefficient of electrical resistance (TCR) from - 135 to - 15°C. The alloy films, which have the f.c.c. lattice of the components, are monocrystalline with the relationship Ni-Cu(001) ∥MgO(001) and Ni-Cu [010] ∥MgO[010] unless Vsp = - 110 V. The Cu content in the films decreases from 8 wt.% to 3 wt.% as Vs increases from O to - 140 V. The growth rate of the films and the value of TCR η (η >
0) depend on Vs
the film thickness d for the films deposited for 30 min reaches 50±1 nm at Vs = 0 V and 74 ± 2 nm at Vs = - 140 V, while η for the films deposited for 30 min increases appreciably with increasing Vs compared with the films deposited for 15 min, although η is highest at Vs = - 140 V for both cases.
Scientific journal, English

Cladding of chromium onto mild steel by low-pressure laser spraying
Yoji Isshiki; Sakae Fujiki; Shinya Itoh; Masanori Kohga; Mituru Hashimoto
Thin Solid Films, Elsevier, 288, 1-2, 45-49, 15 Nov. 1996, Peer-reviwed, Clad layers of chromium onto a mild steel substrate are obtained by low-pressure laser spraying and their composition dependence on impinged energy density is studied in detail with their microstructure and microhardness. When impinged energy density Ei is selected to be 64 W mm-2, the obtained clad layer consists of a Cr30Fe70 alloy. The thickness of the alloying layer decreases with decreasing impinged energy density Ei. A single phase of chromium grows when Ei is selected to be smaller than 13 W mm-2. The presence of CrFe alloying layer extremely enhances corrosion resistance on steel surface.
Scientific journal, English

Structural and physical properties of Co films DC-bias-plasma-sputter-deposited on MgO(001)
Hong Qiu; Tatsuya Ohbuchi; Hisashi Nakai; Mituru Hashimoto
Applied Surface Science, Elsevier, 92, 47-51, 1996, Peer-reviwed, Co films 90 nm thick are deposited on MgO(001) substrates at a temperature of 250°C by DC plasma sputtering at 2.5 kV in pure Ar gas. A DC bias voltage Vs between 0 and -140 V is applied to the substrate during deposition. The structural and physical properties of the film are studied as a function of Vs by the use of reflection high-energy electron diffraction (RHEED), cross-sectional transmission electron microscopy (XTEM), X-ray photon spectroscopy (XPS) and by measuring the temperature coefficient of electrical resistance (TCR) from 50 to 150°C and the saturation magnetization 4πMf at room temperature. As |Vs| increases, the structure of the Co film which is always fee transforms from a polycrystalline state to a textured state such as Co(001)||MgO(001) and Co[010]||MgO[010] with larger grains at Vs = -50 V. The impurity which consists mainly of O and C decreases with increasing |Vs| from 0 V but reaches a slight maximum at -Vs = 110 V. The XTED lines of CoO are observed strongly at Vs = O V and weakly at Vs = -110 V. Consistent with the above mentioned behavior of the structural properties, 4πMf as well as TCR (>
0) take smaller values at Vs = 0 and -110 V. In conclusion, the properties of the Co film are most improved at -Vs = 140 V.
Scientific journal, English

Characterization of cobalt films grown on MgO(001) by dc-biased-sputter deposition
Mituru Hashimoto; Hong Qiu; Tatsuya Ohbuchi; Miklos Adamik; Hisashi Nakai; Arpad Barna; Peter B. Barna
Journal of Crystal Growth, Elsevier, 166, 1-4, 792-797, 1996, Peer-reviwed, Cobalt films (90 nm thick) were deposited on MgO(001) substrates at 250°C by de-sputtering at 2.5 kV in pure argon gas. A bias voltage Vs between O and -180 V was applied to the substrate during the deposition. Reflection high-energy electron diffraction, cross-sectional transmission electron microscopy (XTEM) and X-ray photo electron spectroscopy, as well as measurements of the temperature coefficient of resistivity and saturation magnetization (4πMs), all as a function of Vs, confirmed that the structural and physical properties of cobalt films are most improved at -Vs= 140 V with a Co(001)\\\\MgO(001) and Co[010]\\\\MgO[010] relationship. A structural study of cobalt films prepared at -Vs= 140 V by high-resolution XTEM revealed that the stress induced in cobalt films is relaxed by the generation of defects such as misfit dislocations, lattice expansion and partial lattice distortions.
Scientific journal, English

RBS and XHRTEM characterization of epitaxial Ni films prepared by biased d.c. sputter deposition on MgO(001)
Hisashi Nakai; Hong Qiu; Miklós Adamik; Gyórgy Sáfran; Péter B. Barna; Mituru Hashimoto
Thin Solid Films, 263, 2, 159-161, 15 Jul. 1995, Peer-reviwed, Rutherford backscattering spectrometry (RBS) channelling and cross-sectional high-resolution transmission electron microscopy (XHRTEM) have been applied to characterize the structure of Ni films grown epitaxially on MgO(001) by biased d.c. sputter deposition. The RBS spectra indicate that the Ni films have a high density of lattice imperfections near to the MgO surface. The XHRTEM investigations revealed a lattice expansion in the [010]direction confirming the existence of the slightly distorted cubic lattice of Ni in the vicinity of the substrate surface which was detected by RBS channelling measurements. Regularly distributed edge dislocations due to the mismatch of Ni and MgO lattices have been clearly demonstrated by XHRTEM. © 1995.
Scientific journal, English

Ferromagnetic resonance in Ni films biased DC sputter deposited on MgO(001)
Hiroko Maruyama; Hon Qiu; Hisahsi Nakai; Mituru Hashimoto
Journal of Vacuum Science and Technology, A13, 4, 2154-2160, Jul. 1995, Peer-reviwed
Scientific journal, English

Growth kinetics of antimony layers prepared on SiOx by molecular beam deposition
Hisashi Nakai; Daisuke Baba; Akio Kosuge; Mituru Hashimoto
Thin Solid Films, 259, 1, 32-37, 01 Apr. 1995, Peer-reviwed, Electron microscopy is used to study the growth kinetics of antimony layers molecular-beam-deposited on SiOx at a temperature Ts from 123 to 198 K, with a constant incident rate of Sb4 molecules of 8 × 1012 cm-2 S-1 under a pressure of less than 6 × 10-7 Pa. The dependence of the island density, the fractional surface coverage and the size distribution on the deposition time is analyzed as a function of Ts in terms of Zinsmeister's theory. The following observations are made: (1) desorption is the dominant process of antimony admolecules at Ts studied
(2) the collision factor of a mobile admolecule with a stationary aggregate of admolecules depends on the size of the aggregate
(3) the adsorption energy Ea of an admolecule to the substrate and its diffusion energy Ed on the substrate are consistently determined from three different measurements of the island density, the fractional surface coverage and the size distribution, to confirm Zinsmeister's theory. © 1995.
Scientific journal, English

Ferromagnetic resonance in Ni films produced by biased d.c. sputter deposition onto SiO2 and Si(100)
Hiroko Maruyama; Hong Qiu; Hisashi Nakai; Mituru Hashimoto
Thin Solid Films, 254, 1-2, 224-228, 01 Jan. 1995, Peer-reviwed, Ferromagnetic resonance measurements at the X-band were taken at room temperature mainly to investigate the mechanical properties of Ni films 180 nm thick prepared on both pure and SiO2-covered Si(100) substrates at 190 °C by biased d.c. plasma sputter deposition at 2.5 kV in Ar gas. A negative bias voltage Vs between 0 V and -80 V was applied to the substrates during deposition. The homogeneous intrinsic stress σi induced in the films is compressive (σi <
0). The magnitude of σi depends on Vs. For the Ni/SiO2 system -σi has a maximum as Vs reaches about -30 V because the impurities are most strongly embedded in the film with incoming Ar particles. When - Vs is over 30 V the more energetic Ar particles contribute to a decrease in -σi through resputtering the impurities. For the Ni Si system -σi, only increases monotonically with Vs, mainly owing to the peening effect. The anisotropic planar stress σu which is much smaller in magnitude than σi is also induced in the film for both systems. The origin of σu is not understood at present. Thus, the g-factor varies with Vs mainly in agreement with the dependence of σi on Vs for both systems. © 1995.
Scientific journal, English

Ferromagnetic resonance in Ni films biased dc sputter deposited on MgO(001)
Hiroko Maruyama; Hisashi Nakai; Mituru Hashimoto
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 13, 4, 2157-2160, 1995, Peer-reviwed, Ferromagnetic resonance measurement at X band is carried out at room temperature to investigate the mechanical and magnetic properties of Ni films 180 nm thick deposited on MgO(00l) substrates at 280 °C by biased direct current plasma sputtering at 2.5 kV in Ar gas. A negative bias voltage Vs of 0, -80, and -140 V is applied to the substrate during the deposition. The homogeneous intrinsic stress o-i induced in the films is compressive (crz 0) at any Vsb and its value is independent of Vs. The magnetic anisotropies due to the anisotropic planar stress cru induced during the film formation and due to the magnetocrystalline anisotropy KXf of the epitaxial Ni crystal are mutually superimposed in the film plane. cru is very weak, i.e., |crj l|cr-|, to reduce nearly to zero as Vs reaches -140 V. Although the magnitude of KXf gradually increases as Vs increases, it is about 101 of that of Kx for bulk Ni. The g factor is evaluated at 2.11 independently of Vs. © 1995, American Vacuum Society. All rights reserved.
Scientific journal, English

Epitaxial growth and characterization of Ni films grown on MgO (001) by biased diret-current sputter deposition
Hong Qiu; Hisashi Nakai; Mituru Hashimoto; Gyorgy Safran; Miklos Adamik; Peter B. Barna
Joumal of Vacuum Science Technology A, 12, 5, 2855-2858, Sep. 1994, Peer-reviwed
Scientific journal, English

Epitaxial growth, structure and properties of Ni films grown on MgO(100) by d.c. bias sputter deposition
H. Qiu; A. Kosuge; H. Maruyama; M. Adamik; G. Safran; P. B. Barna; M. Hashimoto
Thin Solid Films, 241, 1-2, 9-11, 01 Apr. 1994, Peer-reviwed, Ni films of 70-240 nm thickness were deposited on an MgO(100) substrate at temperatures Ts≥190°C by d.c. sputtering at 2.5 kV in pure Ar gas. A negative bias voltage Vs between zero and -110 V was applied to the substrate during the deposition. Reflection high energy electron diffraction, X-ray diffraction, cross-sectional transmission electron microscopy. Auger electron spectroscopy, ferromagnetic resonance and the measurement of the temperature coefficient of resistance were used to determine the structure and properties of the films. The degree of epitaxy of Ni increases with increasing Ts as well as increasing Vs. The optimum conditions for epitaxial growth of Ni are Ts≥280°C and Vs≥80 V. In this range epitaxial films with Ni(100) ∥ MgO(100) and Ni〈100〉 ∥ MgO〈100〉 can be prepared. A magnetic anisotropy is induced in the film plane. This anisotropy may be a result of superposition of a magnetocrystalline anisotropy originating from the epitaxial Ni film and of a uniaxial magnetic anisotropy induced during the film formation. In conclusion, as Vs ranges -80 to -110 V the bombarding effect of both energetic ions and fast neutrals of Ar will rule the epitaxial growth of the Ni film by increasing the mobility of Ni adatoms and by resputtering the impurities. This effect is pronounced at Ts≥280°C. © 1994.
Scientific journal, English

EPITAXIAL GROWTH CONDITION OF NI FILMS DC-BIAS-SPUTTER-DEPOSITED ON MGO(001)
H QIU; A KOSUGE; S YUGO; H NAKAI; M HASHIMOTO; M ADAMIK; G SAFRAN; PB BARNA
ADVANCED MATERIALS '93, IV, ELSEVIER SCIENCE PUBL B V, 17, 443-446, 1994, Peer-reviwed
International conference proceedings, English

Epitaxial Growth and Characterization of Ni Films Grown on MgO(001) by Biased Direct-Current Sputter Deposition
Hong Qiu; Hisashi Nakai; Mituru Hashimoto
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 12, 5, 2855-2858, 1994, Peer-reviwed, Ni films thinner than 180 nm are deposited on MgO(001) substrates at a temperature T s of 190 or 280 °C by dc sputtering at 2.5 kV in Ar gas. A dc bias voltage V s between 0 and -140 V is applied to the substrate during the deposition. A study of structural and physical properties of the Ni film is made by the use of reflection high-energy electron diffractionRHEED), cross-sectional transmission electron microscopyXTEM), x-ray reflection diffractionXRD), Rutherford backscattering spectroscopyRBS), and by measuringTCR) in the temperature range from 35 to 135 °C. When Ts = 190 °C the Ni film retains a poly crystalline structure at any V s. When T s ~280 °C, as V s increases from 0 to —140 V the film transforms from the polycrystal to the single crystal with the orientation as Ni(001)||MgO(001) and Ni(010)||MgO(010), indicating that an optimal value of V s for the epitaxial growth ranges from —80 to —110 V. Besides, an analysis of RBS spectra in comparison with XTEM images explains that the atomic density of the Ni film is the highest at V s = — 80 V. The optimal condition for the epitaxial growth is also confirmed by the change of TCR as a function of V s, In conclusion, the epitaxial growth of the Ni film with the lower defect density is dominated at V s = — 80 to — 110 V by the bombardment of both energetic ions and fast neutrals of Ar to increase the mobility of Ni adatoms and to resputter impurities during the film formation. This effect is pronounced at Ts.--280 °C. © 1994, American Vacuum Society. All rights reserved.
Scientific journal, English

Effect of bias-voltage on structural and physical properties of Ni films sputter-deposited on Si(100) and SiO2
Hong Qiu; Akio Kosuge; Hisashi Nakai; Shigemi Yugo; Mituru Hashimoto; Gyorgy Safran; Bela Pecz; Peter B. Barna; Eiichi Yagi; Hiroko Maruyama
207-212, Jul. 1993, Peer-reviwed
International conference proceedings, English

Structural and electrical properties of Ni films grown on Si(100) and SiO2 by d.c. bias sputtering
Hong Qiu; Gyorgy Sáfrán; Bela Pecz; Peter B. Barna; Akio Kosuge; Hisashi Nakai; Shigemi Yugo; Mituru Hashimoto
Thin Solid Films, 229, 1, 107-112, 05 Jun. 1993, Peer-reviwed, Ni films are deposited on both pure and SiO2-covered Si(100) substrates at 190 °C by d.c. diode sputtering at 2.5 kV in pure Ar. A d.c. bias volatage Vs (0 to - 80 V) is applied on the substrates during the deposition. A study is made mainly of the effect of Vs on the structural and electrical properties of the films by reflection high energy electron diffraction, transmission electron microscopy and resistance measurements from 30 to 135 °C. Film-substrate interdiffusion is observed in Ni/Si but not in Ni/SiO2. Ni adatoms diffuse preferentially along Si(111) with the formation of Ni2Si in the Si crystal. The grain size and diffusion depth of the Ni film increase with Vs. A non-columnar structure with voids along the interface is induced by Ni diffusion into Si as Vs ranges from 0 to - 20 V in Ni/Si whereas a slightly inclined columnar structure is induced at Vs = -20 V in Ni/SiO2. Thick columns grow at Vs = -80 V in both systems. The temperature coefficient of resistance, η, is positive for both Ni/Si and Ni/SiO2. The dependences of η on Vs can be understood in terms of the above-mentioned structural changes with Vs. © 1993.
Scientific journal, English

Growth morphology and crystallinity of SbM (M = Ag, Au, Sn, Pb, Te) codeposited layers
Taka'yosi Saida; Mituru Hashimoto
Thin Solid Films, 227, 2, 138-143, 10 May 1993, Peer-reviwed, Electron microscope observations and electric resistance measurements have been made in order to investigate crystallinity and growth morphology of codeposited layers of Sb and a metal such as Ag, Au, Sn, Pb, Te. Layers of various composition ratios were prepared on films of amorphous carbon at 30 °C in a vacuum of 3 × 10-5 Pa. The SbPb codeposited layers include crystalline Sb and Pb at all thicknesses and composition ratios studied. Codeposited layers of SbAg, SbAu or SbSn condense initially in an amorphous state. This state holds even at a post-coalescence stage, and finally crystallizes with an increase in metal concentration or in thickness of the layer. The crystallized layers are composed of Sb and an alloy (Ag3Sb for SbAg, AuSb2 for SbAu) and of Sb and aSn for SbSn. Sb-Te condeposited layers retain an amorphous state at all thicknesses and composition ratios studied. Crystallization temperatures of amorphous layers of SbAu or SbTe decrease with an increase in concentration of Au or Te. The amorphous state in codeposited Sb-metal layers is built up as the frozen-in metastable or amorphous phase of Sb-metal mixture, with the eutectic point much higher than substrate temperature. Then crystallization of the layer is induced by alloy or compound formation as a result of intermixing of metal with Sb. © 1993.
Scientific journal, English

Growth kinetics of antimony layers deposited on glass and SiOx in ultrahigh vacuum
Tadasi Hamano; Akio Kosuge; Mituru Hashimoto
Thin Solid Films, 208, 1, 15-22, 10 Feb. 1992, Peer-reviwed, The growth kinetics of antimony layers deposited on glass and SiOx in a vacuum of 2 × 10-7 Pa under a constant incident rate of antimony vapour molecules is investigated for substrate temperatures Ts between 143 and 353 K. The mean growth rate Rd is estimated for antimony on glass by examining the relationship between the final mean thickness and the final frequency shift of a quartz oscillator through the deposition and activation energies for nucleation and growth evaluated for antimony on SiOx by electron microscopy studies. Rd decreases only monotonically with an increase in Ts. The activation energy Q for growth of islands by their mutual coalescence is evaluated to be 0.081 ± 0.001 eV for Ts ≥ 273 K and 0.020 ± 0.001 eV for Ts ≤ 273 K by the use of a δc ∝ exp(-Q/kTs) expression where δc is the thickness at which the layer transform from a discrete island structure to an interlinked continuous structure. The adsorption energy Ea of admolecules to the substrate and their diffusion energy Ed on the substrate are evaluated through the analysis of, first, changes in island density with deposition time for various values of Ts in terms of Zinsmeister's theory and, secondly, a relationship of saturated island density to Ts in terms of Robinson and Robins's theory. Then Ea and Ed are tentatively evaluated to be 0.26 ± 0.01 eV and 0.14 ± 0.01 eV from the former analysis and to be 0.22 ± 0.02 eV and 0.069 ± 0.015 eV from the latter analysis. © 1992.
Scientific journal, English

Growth kinetics of the antimony layer deposited on glass and SiOx in a vacuum of 10-4 Pa
Hiroyuki Mori; Mituru Hashimoto
Thin Solid Films, 205, 1, 29-34, 30 Oct. 1991, Peer-reviwed, Temperature dependence of the growth rate of an antimony layer on glass under a constant incident rate of antimony vapour molecules is investigated for substrate temperatures Ts between 77 and 333 K by examining the relationship between the final mean thickness of the antimony layer and the final frequency shift of a quartz oscillator through the deposition. Electron microscopy is used to investigate the kinetics of nucleation and growth of the antimony layer on SiOx for the same range of Ts. The dependence of the growth rate on Ts indicates that an effective mean condensation coefficient of the antimony layer on to glass gradually decreases from a nearly saturated value at 77 K with increasing Ts and then steeply decreases above 273 K. The critical thickness δc where the layer grows from a discrete island structure into an almost continuous structure is confirmed to follow an exp(-Q/kTs) dependence for Ts above 273 K where Q is activation energy of growth through interisland coalescence. Then Q is determined to be 0.12±0.01 eV for antimony on SiOx. Finally the variation in island density with the deposition time for Ts above 273 K is analysed on the basis of the simplified model for the kinetics of nucleation and initial growth. © 1991.
Scientific journal, English

Effect of the predeposition of gold, silver, tin or lead on the growth and crystallization processes of amorphous antimony layers
Mituru Hashimoto; Takahiro Nohara
Thin Solid Films, 199, 1, 71-83, 01 Apr. 1991, Peer-reviwed, A study is made, by the in situ measurement of electrical conductivity or resistivity and by electron microscopy, of the growth and crystallization processes of amorphous antimony layers deposited onto a predeposited layer of gold, silver, tin or lead as a function of the thickness dM of such a layer. A complete specimen is prepared on both glass plate and SiOx film at a pressure of 10-5 Pa. When dM is smaller than a certain value δM, the antimony layer crystallizes as it becomes electrically continuous while, when dM is equal to or larger than δM, the antimony layer begins to crystallize at an earlier growth stage where it retains the discontinuous island structure. The value of δM depends on the nature of the metal predeposit: δAu≈0.05 nm, δAg≈2.00 nm, δSn≈2.00 nm, and δPb is too small to be definitely estimated although δPb<
0.06 nm at least. In conclusion, when dM is smaller than δM, the nucleation of crystallites in the amorphous antimony layer is mainly promoted through the sudden enhancement of the stress at the coalescence between islands throughout the antimony layer and, when dM is equal ro or larger than δM, it is mainly promoted possibly through the alloying process at interfaces between the paired layers. © 1991.
Scientific journal, English

Effect of the predeposition of gold, silver, tin or lead on the growth and crystallization processes of amorphous antimony layers
Mituru Hashimoto; Takahiro Nohara
Thin Solid Films, 199, 1, 71-83, 01 Apr. 1991, Peer-reviwed, A study is made, by the in situ measurement of electrical conductivity or resistivity and by electron microscopy, of the growth and crystallization processes of amorphous antimony layers deposited onto a predeposited layer of gold, silver, tin or lead as a function of the thickness dM of such a layer. A complete specimen is prepared on both glass plate and SiOx film at a pressure of 10-5 Pa. When dM is smaller than a certain value δM, the antimony layer crystallizes as it becomes electrically continuous while, when dM is equal to or larger than δM, the antimony layer begins to crystallize at an earlier growth stage where it retains the discontinuous island structure. The value of δM depends on the nature of the metal predeposit: δAu≈0.05 nm, δAg≈2.00 nm, δSn≈2.00 nm, and δPb is too small to be definitely estimated although δPb<
0.06 nm at least. In conclusion, when dM is smaller than δM, the nucleation of crystallites in the amorphous antimony layer is mainly promoted through the sudden enhancement of the stress at the coalescence between islands throughout the antimony layer and, when dM is equal ro or larger than δM, it is mainly promoted possibly through the alloying process at interfaces between the paired layers. © 1991.
Scientific journal, English

Nucleation and growth of crystallites in amorphous antimony layers on as-deposited ultrathin sublayers of metal: Copper, silver, gold, tin and lead
M. Hashimoto; K. Umezawa; R. Murayama
Thin Solid Films, 188, 1, 95-108, 01 Jul. 1990, Peer-reviwed, Optical microscopy is used for the in situ observation of the nucleation and growth of crystallites in the amorphous antimony layer prepared on an as-deposited ultrathin sublayer of copper, silver, gold, tin or lead. A whole specimen is deposited on a cover glass in a vacuum of 1 × 10-4 Pa. With the use of sublayers of copper, gold and silver it is possible to measure the growth rate v of antimony crystallites as a function of thickness dSb of the antimony layer. An analysis of the relation of v to dSb on the basis of the model previously presented gives such parameters as the thicknesses ds0 and dv0 of surface regions near the substrate and the vacuum respectively and the growth rates us and uv at surfaces adjacent to the substrate and the vacuum respectively: ds0 = 2.0 nm, dv0 = 5.5nm, us = 11 μm s-1 and uv = 0.21 μm s-1 when dCu is 4.3 × 10-2 nm while ds0 = 0.7 nm, dv0 = 4.4 nm, us = 7.7 μm s-1 and uv = 0.13 μm s-1 when dAu is 4.0 × 10-2 nm. The effective activation energy for the growth of crystallites is determined from an Arrhenius plot of v from 30 to 60°C to be, for example, 1.2 eV at dSb = 3.0 nm and 0.7 eV at dSb = 5.2 nm when dCu is 4.3 × 10-2 nm while it is 1.0 eV at dSb = 2.2 nm and 0.9 eV at dSb = 3.7 nm when dAu is 4.0 × 10-2nm. Sublayers of tin and lead play an extremely progressive role on nucleation of antimony crystallites, resulting in such a high nucleation density that v could not be measured. This originates mainly from the larger area of interface between coupled layers of Sb/Sn or Sb/Pb according to electron microscopy. © 1990.
Scientific journal, English

THE STABILITY OF THE AMORPHOUS PHASE IN AN SB LAYER VACUUM-DEPOSITED ON THE AIR-CLEAVED AND VACUUM-CLEAVED NACL AND THE EFFECTS OF SB THICKNESS AND OVERDEPOSITS OF AG, AU, SN AND PB
M HASHIMOTO; T HAMANO
VACUUM, PERGAMON-ELSEVIER SCIENCE LTD, 40, 5, 445-448, 1990, Peer-reviwed
Scientific journal, English

Crystallization of amorphous antimony layers on as-deposited ultrathin sublayers of silver
Mituru Hashimoto; Kiyoshi Umezawa
Thin Solid Films, 167, 1-2, 223-232, 15 Dec. 1988, Peer-reviwed, We have directly observed, by optical microscopy, the crystallization process of an amorphous antimony layer 3.4-8.9 nm thick prepared on an as-deposited layer of silver whose thickness ranges from 0.7 × 10-2 to 8.5 × 10-2 nm. A whole specimen is deposited onto a cover glass in a vacuum of 3 × 10-4 Pa. The averaged growth rate v of crystallites nucleated in the amorphous antimony layer is measured as a function of the reciprocal thickness dSb-1 of the antimony layer and also as a function of the substrate temperature Ts at dSb = 3.7 and 4.5 nm. v decreases monotinically with increasing dSb-1 in accordance with a model previously presented (M. Hashimoto, Thin Solid Films, 116 (1984) 373-381). When the thickness dAg of the silver sublayer is equal to 8.5 × 10-2 nm such parameters as the thicknesses ds0 and dv0 of surface regions near the substrate and the vacuum and the growth rates us and uv at surfaces adjacent to the substrate and the vacuum are estimated to be 5.6 nm and 2.0 nm and 10 μm s-1 and 0.21 μm s-1. Effective values of the activation energy for crystallization are estimated from the Arrhenius plot of v from 30 to 60°C to be, for example, 0.8 eV at dSb = 3.7 nm and 0.6 eV at dSb = 4.5 nm when dAg is 8.5 × 10-2 nm. © 1988.
Scientific journal, English

Effect of thin metal sublayers on the stability of the amorphous phase of antimony layers
Mituru Hashimoto; Masahiko Matsui
Applied Surface Science, 33/34, 33-34, Apr. 1988, Peer-reviwed
Scientific journal, English

Effect of electron irradiation on the growth of thin antimony layers deposited on collodion and on carbon in a vacuum of 10-4 Pa
M. Hashimoto; M. Itoh; H. Kuramochi; J. Takei
Thin Solid Films, 161, C, 123-130, 1988, Peer-reviwed, Electron microscopy was used in a comparative investigation of the growth processes of antimony layers deposited on two types of amorphous substrate: collodion films and carbon films. Attention was focused on the effect of the pre-irradiation with electrons of the surface. The deposition of the antimony layer began, in a vacuum of 10-4 Pa, at an interval ti of time after the substrate had been irradiated with 4 × 1013 electrons cm-2 s-1 at 700 eV for a time td. The surface coverage θ and the particle number density N of the antimony deposit on the substrate, or the ratios θr and Nr of θ and N on the irradiated substrate to those on the non-irradiated substrate, were measured as functions of ti as well as td. Without irradiation (td = 0 s), θ on the carbon film was usually greater than θ on the collodion film while N on the carbon film reached a much higher maximum value at a smaller thickness than N on the collodion film. The irradiation caused increases in θ and N on collodion but little change in θ and N on carbon: for an antimony layer 2.8 nm thick, θr and Nr on collodion increased monotonically to about 2.2 and 3.2 as td increased from 0 to 30 s at ti = 0 s but θr and Nr on carbon remained almost unchanged even at td = 20 s. Such increments of θr and Nr on collodion decayed monotonically with the time lapse ti. These behaviours of θr and Nr are discussed in terms of a contamination layer produced as a result of interaction between the irradiated electrons and the residual gas molecules adsorbed on the surface. © 1988.
Scientific journal, English

Effect of metal overdeposits on the stability of the amorphous phase of antimony layers
M. Hashimoto
Journal of Crystal Growth, 79, 1-3, 140-143, 02 Dec. 1986, Peer-reviwed, Electron microscopy was used to investigate the effect of overdeposits of various elements such as Ni, Cu, Ag, Au, In, Ge, Sn, Pb or Bi on the stability of an amorphous phase of an Sb layer. The bilayer system (metal on Sb) was deposited on collodion films at 30°C in a vacuum of 10-4-10-5 Pa (HV) and, for some cases, on carbon films, in a vacuum of 10-6-10-7 Pa (UHV). The mean thickness of the Sb layer ranged from 5 to 10 nm and that of the overlayer from 0.1 to 10 nm. The effect was classified into three categories depending on the kind of overdeposit: (1) Deposits of Cu, Ag, Au, Ni or In stimulated the Sb layer to crystalize forming compounds with Sb. (2) Deposits of Bi, Pb or Sn contributed to crystallization of the Sb layer without formation of compounds. (3) Deposits of Al or Ge yielded no effect, leaving the Sb layer amorphous. A minimum thickness of the overlayer for an Sb layer with a thickness of 8 nm to crystallize in HV is estimated at 0.15-0.20 nm for Cu, Ag, Au and Bi, 0.28 nm for Pb, 0.87 nm for Sn, 2.2 nm for Ni and 2.6 nm for In. Finally it was confirmed that contamination or cleanliness of the interface influenced not only the crystallinity of the bilayer system, but also the growth morphology of overdeposits on the Sb layer. © 1986.
Scientific journal, English

Effect of a thin silver sublayer on the growth of antimony films deposited in vacuum of 10-5 Pa
M. Hashimoto
Thin Solid Films, 139, 1, 61-66, 01 May 1986, Peer-reviwed, The growth of antimony films on collodion covered with a predeposited thin silver sublayer was studied by electron microscopy. The mean thickness of the sublayer, which was composed of silver islands, ranged from 0.03 to 0.30 nm. The oblique angle φ of the antimony vapour beam with respect to the substrate surface was varied from 0° to 80°. The surface coverage of the substrate by the antimony film is markedly increased, independently of φ, by the predeposition of silver because the silver islands act as excess nucleation centres to capture antimony molecules, absorbing the momenta of the molecules along the substrate surface. The crystallization thickness dc for Sb/Ag/collodion is much smaller than that for Sb/collodion and no sensitive dependence of dc on φ is observed for the former system. © 1986.
Scientific journal, English

GROWTH AND CRYSTALLIZATION OF AMORPHOUS ANTIMONY FILMS OBLIQUELY DEPOSITED IN A VACUUM OF 10-5PA
M HASHIMOTO
THIN SOLID FILMS, ELSEVIER SCIENCE SA LAUSANNE, 115, 4, 309-314, 1984, Peer-reviwed
Scientific journal, English

Effect of electron irradiation on crystallization of vacuum-deposited amorphous antimony films
Mituru Hashimoto; Atsushi Tabei; Seiji Tajima; Makoto Kato
Thin Solid Films, 113, L25-L27, Jan. 1984, Peer-reviwed
Scientific journal, English

DEPENDENCE OF THE CRYSTALLIZATION RATE OF VACUUM-DEPOSITED AMORPHOUS ANTIMONY FILMS ON THE FILM THICKNESS
M HASHIMOTO
THIN SOLID FILMS, ELSEVIER SCIENCE SA LAUSANNE, 116, 4, 373-381, 1984, Peer-reviwed
Scientific journal, English

Crystallization of amorphous Sb film vacuum-deposited on air-cleaved NaCl substrate
Mituru Hashimoto
Japanese Journal of Applied Physics, 21, 7, 1099, Jul. 1982, Peer-reviwed
Scientific journal, English

CRYSTALLIZATION OF AMORPHOUS ANTIMONY FILMS DEPOSITED ONTO GLASS SUBSTRATES IN ULTRAHIGH-VACUUM
M HASHIMOTO; H SUGIBUCHI; K KAMBE
THIN SOLID FILMS, ELSEVIER SCIENCE SA LAUSANNE, 98, 3, 197-201, 1982, Peer-reviwed
Scientific journal, English

CRYSTALLIZATION OF AMORPHOUS ANTIMONY FILMS ON SILVER FILMS
M HASHIMOTO; K KAMBE
THIN SOLID FILMS, ELSEVIER SCIENCE SA LAUSANNE, 94, 3, 185-190, 1982, Peer-reviwed
Scientific journal, English

Crystallization ofamorphous Sb1-xBix (x less than 0.2) films
Mituru Hashimoto; Hideaki Ogihara; Kenjiro Kambe
Japanese Journal of Applied Physics, 20, 2, L99-L102, Feb. 1981, Peer-reviwed
Scientific journal, English

EFFECT OF SUBSTRATE-TEMPERATURE ON CRYSTALLIZATION OF AMORPHOUS ANTIMONY FILM
M HASHIMOTO; T NIIZEKI; K KAMBE
JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN J APPLIED PHYSICS, 19, 1, 21-23, 1980, Peer-reviwed
Scientific journal, English

Spin wave resonance in thin films of MnSb1-xSnx
Mituru Hashimoto; Hideo Ishii; Kenjoro Kambe
Journal of the Physical Society of Japan, 37, 277, Oct. 1974, Peer-reviwed
Scientific journal, English

Ferromagnetic resonance in thin films of the CrTe1-xSbx system
Masanori Isshiki; Mituru Hashimoto; Kenjiro Kambe
Journal of the Physical Sovietey of Japan, 35, 2, 438-442, Aug. 1973, Peer-reviwed
Scientific journal, English

Ferromagnetic resonance in thin films of the system MnSb-CrSb
Yoji Isshiki; Mituru Hashimoto; Kenjiro Kambe
Journal of the Physical Society of Japan, 33, 3, 666-670, Sep. 1972, Peer-reviwed
Scientific journal, English

Ferromagnetic resonance in thin films of CrTe
Masanori Isshiki; Mituru Hashimoto; Kenjiro Kambe
Japanese Journal of Applied Physics, 11, 1052, Sep. 1972, Peer-reviwed
Scientific journal, English

Ferromagnetic resonance in evaporated thin film of MnSb
Mituru Hashimoto
Journal of the Physical Society of Japan, 22, 3, 869-877, Mar. 1967, Peer-reviwed
Scientific journal, English

酸化鉄蒸着膜（II）
橋本 満; 能勢 宏; 木村錬一
応用物理, 36, 1, 13-19, Jan. 1967, Peer-reviwed
Scientific journal, Japanese

Ni系Ferrite薄膜とその磁性
橋本 満; 能勢 宏; 木村錬一
応用物理, 33, 8, 550-558, Aug. 1964, Peer-reviwed
Scientific journal, Japanese

２１世紀版 薄膜作製応用ハンドブック
Apr. 2003, エヌ・テイー・エス, Japanese, Peer-reviwed, Introduction other

膜厚の測定・評価（通信講座"薄膜の測定・評価技術"第Ⅰ講テキスト）
橋本 満
May 1999, Japanese, Introduction other

応用物理用語大辞典
橋本 満
Japanese, Joint work, 応用物理学会編，オーム社, Apr. 1998

反応性スパッタ法によるCoTiN磁性薄膜の作製と評価(2)
陳 長川; 山本祐樹; 鈴木浩嗣; 史 蹟; 橋本 満
Oral presentation, Japanese
Mar. 2002

RFスパッタ法により作製したGaAs(001)基板上Ni薄膜
牧原健二; 史 蹟; 橋本 満; 丸山 享
Oral presentation, Japanese
Mar. 2002

断続基板バイアスによるNi-Pt薄膜の組成および構造の変調
穂積康彰; 周 ヨウ,史 蹟; 橋本 満
Oral presentation, Japanese, 第62回応用物理学会学術講演会予稿集ＩＩ
Sep. 2001

電子ビーム蒸着法によるGaAs(001)基板上Co-Ge化合物薄膜の成長
石田和明; 豊嶋宏徳; 中村圭亮; 末松信彦; 史 蹟; 橋本 満
Oral presentation, Japanese, 第62回応用物理学会学術講演会予稿集ＩＩ
Sep. 2001

Si(001)上DCスパッタCoPt薄膜の構造への基板バイアス依存性
新満竜郎; 趙 仲宇; 山口顕郎; 史 蹟; 橋本 満
Oral presentation, Japanese, 第62回応用物理学会学術講演会予稿集ＩＩ
Sep. 2001

Co-Ge前駆体によるSi(100)基板上CoSi2薄膜の作製
末松信彦; 中村圭亮; 豊嶋宏徳; 石田和明; 史 蹟; 橋本 満
Oral presentation, Japanese, 第62回応用物理学会学術講演会予稿集ＩＩ
Sep. 2001

反応性スパッタ法によるCoTiN磁性薄膜の作製と評価
陳 長川; 鈴木浩嗣; 山本佑樹; 史 蹟; 橋本 満
Oral presentation, Japanese, 第62回応用物理学会学術講演会予稿集ＩＩ
Sep. 2001

断続基板バイアスによるNi-Pt薄膜の組成および構造の変調
穂積康彰; 周ヨウ; 史 蹟; 橋本 満
Oral presentation, Japanese
Sep. 2001

反応性スパッタ法によるCoTiN磁性薄膜の作製と評価
陳 長川; 鈴木浩嗣; 山本祐樹; 史 蹟; 橋本 満
Oral presentation, Japanese
Sep. 2001

Si(001)上DCスパッタCoPt薄膜の構造の基板バイアス依存性
新満竜郎; 三浦克明; 史 蹟; 橋本 満
Oral presentation, Japanese, 第48回応用物理学関係連合講演会予稿集Ⅱ
Mar. 2001

RFスパッタ法により作製したGaAs（001）基板上のMgO 薄膜
牧原健二; 史 蹟; 橋本 満; 丸山 亨
Oral presentation, Japanese, 第48回応用物理学関係連合講演会予稿集Ⅱ
Mar. 2001

反応性スパッタ法によるSi基板上CoTiN 磁性薄膜の構造と物性
陳 長川; 豊嶋良彦; 史 蹟; 橋本 満
Oral presentation, Japanese, 第48回応用物理学関係連合講演会予稿集Ⅱ
Mar. 2001

GaAs(001)基板上におけるCoGe2 薄膜の成長
高橋史年; 末松信彦; 池田真悟; 石田和明; 史 蹟; 橋本 満
Oral presentation, Japanese, 第61回応用物理学会講演予稿集Ⅱ
Sep. 2000

分子線蒸着法によるSi（111）面上のCu薄膜初期成長過程Ⅱ
水島博昭; 史 蹟; 中井日佐司; 橋本 満
Oral presentation, Japanese, 第61回応用物理学会講演予稿集Ⅱ
Sep. 2000

Si(001)上直流バイアスプラズマスパッタPt薄膜の構造のバイアス依存性
新満竜郎; 三浦克明; 史 蹟; 橋本 満
Oral presentation, Japanese, 第61回応用物理学会講演予稿集Ⅱ
Sep. 2000

反応性スパッタ法によるMgO(001)上のCo-Ti-N 系薄膜の構造および物性
豊島良彦; 陳 長川; 史 蹟; 橋本 満
Oral presentation, Japanese, 第61回応用物理学会講演予稿集Ⅱ
Sep. 2000

Si（001）上直流バイアスプラズマスパッタPt薄膜の構造のバイアス依存性
新満竜郎; 小島大輔; 史 蹟; 橋本 満
Oral presentation, Japanese, 第47回応用物理学関係連合講演会講演予稿集Ⅱ
Mar. 2000

直流バイアススパッタ法によるMgo（001）基板上PtxNi1-x（x＝0.2－0.5）薄膜の構造観察と物性測定
周 榕; 天辰芳正; 史 蹟; 橋本 満
Oral presentation, Japanese, 第47回応用物理学関係連合講演会講演予稿集Ⅱ
Mar. 2000

電子ビーム蒸着法によるGaAs（001）上のCo-Ge化合物薄膜の作製Ⅲ
梅田 豊; 高橋史年; 石井大輔; 史 蹟; 橋本 満
Oral presentation, Japanese, 第47回応用物理学関係連合講演会講演予稿集Ⅱ
Mar. 2000

Si（001）およびSiOx基板上のCuSix真空蒸着薄膜の電気特性と構造
松原裕人; 楊 季平; 牧原健二; 史 蹟; 中井日佐司
Oral presentation, Japanese, 第47回応用物理学関係連合講演会講演予稿集Ⅱ
Mar. 2000

GaAs（001），Si（001）およびSiO2基板上のCu，Cu13%Si真空蒸着薄膜の電気特性と構造
楊 季平; 松原裕人; 牧原健二; 史 蹟; 中井日佐司; 橋本 満
Oral presentation, Japanese, 第60回応用物理学会学術講演会予稿集Ⅱ
Sep. 1999

Si（001）基板上におけるCoSi2薄膜の構造および物性
高橋史年; 梅田 豊; 石井大輔; 史 蹟; 橋本 満
Oral presentation, Japanese, 第60回応用物理学会学術講演会予稿集Ⅱ
Sep. 1999

電子ビーム蒸着法によるGaAs（001）基板上Co-Ge化合物薄膜の作製Ⅱ
石井大輔; 梅田 豊; 高橋史年; 史 蹟; 橋本 満
Oral presentation, Japanese, 第60回応用物理学会学術講演会予稿集Ⅱ
Sep. 1999

RFスパッタ法によるGaAs（001）基板上のNi薄膜の作製，構造および物性（Ⅰ）
牧原健二; 楊 季平; 史 蹟; 橋本 満
Oral presentation, Japanese, 第60回応用物理学会学術講演会予稿集Ⅱ, 1999年9月1日-4日，甲南大学
Sep. 1999

直流バイアススパッタ法によるMgO（001）基板上PtxNi1-x（x＝0.2－0.5）薄膜の構造観察と物性測定
天辰芳正; 橋本 満
Oral presentation, Japanese, 第60回応用物理学会学術講演会予稿集Ⅱ
Sep. 1999

MgO（001）基板上DCバイアススパッタNi100-xFex（x＝75, 65）膜のエピ成長構造
周 榕; 楊 季平; 天辰芳正; 橋本 満
Oral presentation, Japanese, 第60回応用物理学会学術講演会予稿集Ⅱ
Sep. 1999

Epitaxial growth mode of Fe-Ni alloy films dc-biased sputter-deposited on MgO（001）
J. Yang; M. Ishino; C. Chen; M. Hashimoto; A. Barna; P. B. Barna
Invited oral presentation, English, International conference
Jun. 1999

Si（001）基板上の直流バイアススパッタPt薄膜の構造と電気的性質
小島大輔; 牧原健二; 史 蹟; 橋本 満
Oral presentation, Japanese, 第49回応用物理学関係連合講演会講演予稿集Ⅱ
Mar. 1999

MgO（001）上DCバイアススパッタNi100-xFex（x＝80, 60）膜のエピ成長構造
周 榕; 楊 季平; 池田 聡; 天辰芳正; 橋本 満
Oral presentation, Japanese, 第49回応用物理学関係連合講演会講演予稿集Ⅱ
Mar. 1999

Si（001）基板上におけるCoおよびCoSi2薄膜のエピタキシャル成長
高橋史年; 石井大輔; 入江哲司; 史 蹟; 橋本 満
Oral presentation, Japanese, 第49回応用物理学関係連合講演会講演予稿集Ⅱ
Mar. 1999

GaAs（001）基板上Co-Ge化合物薄膜の作製
石井大輔; 高橋史年; 入江哲司; 史 蹟; 橋本 満
Oral presentation, Japanese, 第49回応用物理学関係連合講演会講演予稿集Ⅱ
Mar. 1999

反応性スパッタリング法によるFeNi-N薄膜系の作製，構造および磁化特性
柴田昌宏; 豊島良彦; 史 蹟; 橋本 満
Oral presentation, Japanese, 第59回応用物理学会学術講演会講演予稿集Ⅱ
Sep. 1998

分子線蒸着法によるSi（111）面上でのCu薄膜初期成長過程（Ⅱ）
小中敏寛; 中井日佐司; 橋本 満
Oral presentation, Japanese, 第59回応用物理学会学術講演会講演予稿集Ⅱ
Sep. 1998

Si基板上の直流バイアススパッタPt薄膜の構造と電気的性質
小島大輔; 天辰芳正; 楊 季平; 史 蹟; 橋本 満
Oral presentation, Japanese, 第59回応用物理学会学術講演会講演予稿集Ⅱ
Sep. 1998

直流バイアススパッタ法によるMgO（001）上でのPt薄膜の成長過程と電気的特性
天辰芳正; 楊 季平; 史 蹟; 橋本 満
Oral presentation, Japanese, 第59回応用物理学会学術講演会講演予稿集Ⅱ
Sep. 1998

Si基板上の電子ビーム蒸着Co薄膜（Co/Si（001）&Co/Si（111））の界面反応機構
入江哲司; 石井大輔; 史 蹟; 高橋史年; 橋本 満
Oral presentation, Japanese, 第59回応用物理学会学術講演会講演予稿集Ⅱ
Sep. 1998

Intial growth process of Permalloy films epitaxially grown on MgO（001）by dc biased plasma sputtering
石野正樹; 楊 季平; 史 蹟; 中井日佐司; 橋本 満
Oral presentation, Japanese, 第59回応用物理学会学術講演会講演予稿集Ⅱ
Sep. 1998

MgO（001），MgO（110），MgO（111）およびFe/Mg（001），Permalloy/MgO（001）基板上のInver直流スパッタ膜の初期成長構造
楊 季平; 天辰芳正; 牧原健二; 史 蹟; 橋本 満
Oral presentation, Japanese, 第59回応用物理学会学術講演会講演予稿集Ⅱ
Sep. 1998

応用物理学会

日本物理学会

日本結晶成長学会

American Association for the Advancement of Science