工学修士, 電気通信大学, 1997年03月

工学博士, 電気通信大学, 2000年03月

Optical properties

Research and development

Electron and emission

Electronic properties in general

Science and technology in general

Solid-state devices

Engineering in general

光物性

研究開発

イオン放出

電子放出

電子物性一般

科学技術一般

固体デバイス

工学一般

ナノテク・材料, 応用物理一般, Nano Science, Material Science, Applied Physics, Electronics

1997年04月 - 2000年03月
電気通信大学, 電気通信学研究科（博士後期課程）, 電子工学専攻, 日本国

1995年04月 - 1997年03月
電気通信大学, 電気通信学研究科（博士前期課程）, 電子工学専攻, 日本国

1991年04月 - 1995年03月
電気通信大学, 電気通信学部, 電子工学科, 日本国

2021年06月 - 現在
国費特別プログラム実施委員, 電気通信大学

2020年11月 - 現在
国際教育WG, 電気通信大学

2017年04月 - 現在
大学院 情報理工学研究科 教育委員, 電気通信大学, 国際教育センターからオブザーバーとして参加

2013年04月 - 現在
国際交流センター運営委員会, 電気通信大学

2009年04月 - 現在
研究設備センター委員

2019年12月 - 2021年05月
拡大MICH運営委員, 電気通信大学

2010年04月 - 2014年03月
安全・環境保全室（薬品管理部門）, 電気通信大学

2002年04月 - 2005年03月
機器分析センター委員, 電気通信大学

電気通信大学における国際科目－UEC Academic Skills I（Computer Literacy）－
CHOO Cheow Keong
筆頭著者, 多摩留学生教育研究論集, 11号, 掲載ページ 16-23, 出版日 2018年03月, 査読付, 国内誌, 電気通信大学は学生の国際化と英語力強化を図るため、1997年より 英語による国際科目を開講している。国際科目は、海外の協定校からの短期交換留学生にも提供されている科目で、正規学生と短期交換留学生の双方に交流と学び合う機会を提供している。UEC Academic Skills I （Computer Literacy）は、電気通信大学の学域（学部）で開講されている国際科目の1つであ り、パソコンのスキルを習得するとともに正規学生と短期交換留学生とのコミュニケーションを図り、正規学生の海外留学を促進する環境も提供している。本稿では、2014年の国際科目の再編の際に 、内容を改編したUEC Academic Skills Iのカリキュラム内容を報告し、学生による授業評価の結果を分析し、問題点と将来に向けての改善点を検討する。
研究論文（学術雑誌）, 日本語

Characterization of SrTiO3 target doped with Co ions, SrCoxTi1−xO3−δ, and their thin films prepared by pulsed laser ablation (PLA) in water for visible light response
Fumihiko Ichiharaa; Yuma Murataa; Hiroshi Onoa; Cheow-keong Choo; Katsumi Tanaka
Applied Surface Science, Elsevier, 419巻, 掲載ページ 126-137, 出版日 2017年10月, 査読付, SrTiO3 (STO) and Co-doped SrTiO3 (Co-STO) sintered targets were synthesized and were Ar+ sputtered to elucidate the charge compensation effect between Sr, Ti and Co cations following the reduction by oxygen desorption. Following exposure of the Ar+-sputtered target to the air, charge transfer reactions occurred among Co2+, Ti3+, O2− and Sr2+ species which were studied by their XPS spectra. Pulsed laser ablation (PLA) of these targets was carried out in water to prepare the nanoparticles which could be supplied to the thin films with much higher surface reactivity expected for photocatalytic reactions. The roles of Co ions were studied for the stoichiometry and crystallinity of the nanoparticles which constituted the thin films. Photo-degradation of methylene blue was carried out on the PLA thin films under very weak visible light at 460 nm. The PLA thin films showed the photocatalytic activities, which were enhanced by the presence of Co ions. Such the effect of Co ions was considered from viewpoint of the d-d transition and the charge-transfer between Co ions and the ligand oxygen.
研究論文（学術雑誌）, 英語

Effects of nitrogen substitution in amorphous carbon films on electronic structure and surface reactivity studied with x-ray and ultra-violet photoelectron spectroscopies
Yuma Murata; Rempei Nakayama; Fumihiko Ichihara; Hiroshi Ono; Cheow-Keong Choo; Katsumi Tanaka
JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 121巻, 9号, 掲載ページ 095302-1-095302-12, 出版日 2017年03月, 査読付, We investigated the effects of incorporating a low percentage of nitrogen on the local and the electronic structures of amorphous carbon (a-C) using X-ray photoelectron spectroscopy and ultra-violet photoelectron spectroscopy (UPS). Nitrogen-doped amorphous carbon films (a-CNx) with varying nitrogen contents were prepared by a thermal decomposition method using a mixture of CH4 + NH3 under atmosphere. A slight shift of the C 1s core-level spectrum toward the higher binding energy side was detected in a-CNx as a function of nitrogen content, whereas a shift of the Fermi level (E-F) cannot be confirmed from the UPS results. This was interpreted as a chemical shift between carbon and nitrogen atoms rather than as a shift of the E-F. The C 1s peak shifts can be explained by the presence of two kinds of C-N local structures and the charge transferred bulk C-C components by nitrogen atoms. The two kinds of deconvoluted C 1s components could be well correlated with the two N 1s components. Two localized states were detected below the E-F in UPS spectra of a-CNx, which could be assigned to defect bands. These defects played a significant role in the surface reactivity, and were stabilized in a-CNx. The adsorption and reaction of NO were carried out on a-CNx as well as a-C films. It was found that both defect sites and O2- species were responsible on a-C, while O2- species were selectively active for NO adsorption on a-CNx. We concluded that nitrogen doping reduces defect density to stabilize the surface of a-C, while at the same time inducing the selective adsorption capability of NO. Published by AIP Publishing.
研究論文（学術雑誌）, 英語

Moodleを活用した留学生用「安否確認システム」の構築と運営
CHOO Cheow Keong
多摩留学生センター教育研究論集, 電気通信大学国際交流推進センター ; 2006-, 10号, 掲載ページ 23-29, 出版日 2016年03月, 査読付
研究論文（学術雑誌）, 日本語

Characterization of N-doped DLC thin films prepared by hydrocarbons pyrolysis method
Yuma Murata; Cheow-Keong Choo; Hiroshi Ono; Yutaka Nagai; Katsumi Tanaka
MATERIALS TODAY-PROCEEDINGS, ELSEVIER SCIENCE BV, 3巻, 掲載ページ S197-S202, 出版日 2016年, 査読付, Nitrogen-doped DLC thin films prepared by a hydrocarbons pyrolysis method were characterized with Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), UV-Vis spectroscopy and a four-terminal current-voltage measuring method in terms of their structural, bonding, optical and electrical properties. Raman spectra showed that doping N atoms in the DLC films caused the full width at half maximum (FWHM) values of G-peak to be broader, the G-peak positions to shift downward and the I-D/I-G ratio to be lower than non-doped DLC films. These indicate that N-doping to DLC induces the reduction of the sp(2) based nanocluster size. The chemical bonding state of the N-doped DLC films was homogeneous in bulk, which was evaluated with XPS by Ar sputtering of the DLC films. The XPS spectra of C1s and N1s showed that the hybridized C ratio (sp(3)C/sp(2)C) of the deconvoluted C1s spectra increased due to the formation of the N bonded to sp(3)C (N-sp(3)C). In addition, the optical band gap and the resistance increased by doping N atoms in the DLC films. Our experimental results show that N-doping leads to an increase of the sp(3)C/sp(2)C and the resistance as well as the optical band gap of the DLC films prepared with the hydrocarbons pyrolysis method. (C) 2016 The Authors. Published by Elsevier Ltd.
研究論文（国際会議プロシーディングス）, 英語

UECアカデミックスキルズ授業 − コンファレンス管理システムCMSの導入の試み −
CHOO Cheow Keong
多摩留学生センター教育研究論集, 電気通信大学国際交流推進センター, 9号, 掲載ページ 61-65, 出版日 2014年03月, 査読付
研究論文（学術雑誌）, 日本語

先進理工学科における2年次専門実験（電気・電子回路実験）の準備と実施について
奥野剛史; 大家明広; 山崎典昌; 高橋光生; 早川義彦; 矢崎和幸; 和田紀子; 藁科崇; 坂本克好; Choo Cheow Keong; 永井豊; 守屋雅隆; 沈青; 島田宏; 林茂雄
電気通信大学紀要, 電気通信大学, 25巻, 1号, 掲載ページ 73-78, 出版日 2013年02月, 査読付, The new laboratory class of Electric and Electronic Circuit Laboratory has been conducted. All of the second year students at the Department of gineering Science are required to take this class. An example of preparation for new classes in the new department is shown. Academic engineers and faculties formerly belonging to dif ferent depar tments are cooperatively involved in the preparation and teaching for the laboratory class. The class has been successfully completed in 2011 for the first time after the reorganization of the Faculty of Informatics and Engineering in April 2010. The results concerning report scores of students, answers of students' questionnaires, and e-Learning are shown and discussed.
研究論文（大学，研究機関等紀要）, 日本語

Deposition of potassium-oxygen on silicon surfaces by pulsed laser ablation of potassium superoxide: Study of work function changes
CK Choo; D Suzawa; K Tanaka
SURFACE SCIENCE, ELSEVIER SCIENCE BV, 600巻, 7号, 掲載ページ 1518-1525, 出版日 2006年04月, 査読付, Potassium-oxygen species were deposited on pure, Si nanoparticles coated and H-terminated Si nanoparticles coated p-Si(1 0 0) surfaces by pulsed laser ablation of potassium superoxide (KO,) target. The deposition properties, composition and the work function changes of the deposited species were investigated in situ using an X-ray photoelectron spectroscopy (XPS) and a Kelvin probe measurement. The deposited species were assigned to K2O2 and KO2, and they can be selectively deposited by controlling the laser fluence: i.e., at 200 mJ/cm(2) and at those more than 300 mJ/cm(2) respectively. Experimental results showed that the work function decreased drastically with depositing of KOx (x = 1 or 2), and the minimum work function values observed were 1.0 eV and 0.7 eV for pure p-Si(1 0 0) and Si nanoparticles coated substrates, respectively. The study demonstrates the formation of the surface species with minimum work function can be identified by XPS. (c) 2006 Elsevier B.V. All rights reserved.
研究論文（学術雑誌）, 英語

Time-resolved photoluminescence spectra of Si species encapsulated in zeolite supercages
K Tanaka; Y Komatsu; CK Choo
JOURNAL OF PHYSICAL CHEMISTRY B, AMER CHEMICAL SOC, 109巻, 2号, 掲載ページ 736-742, 出版日 2005年01月, 査読付, Photoluminescence (PL) spectra of Si species encapsulated in zeolite supercages are studied. It is reported that the chained Si species terminated partially with phenyl groups and with some unsaturated bonds are formed in zeolite supercages by the reaction with phenylsilane and they show PL around 4 eV (J. Phys. Chem. 2004, 108, 2501-2508). In the present paper they are reduced with hydrogen to prepare Si chained species terminated and saturated with hydrogen atoms. The PL spectra are deconvoluted to be four components at 1.9, 2.2, 2.6, and 3.7 eV, which can tentatively be assigned to Si nanocrystals and Si quantum wires in addition to defects in SiO(2) and uncontrolled organic impurities in zeolite, respectively. At elevated temperatures the Si quantum wires in zeolite pores seem to change the Si nanocrystals with the size larger than that of the zeolite pore diameter. It is the first case in which the PL decay lifetime of oxygen vacancies in zeolite can be detected to be quite short to be about 16 ns. The detected lifetimes of Si quantum wires are significantly very short, about 12 ns. The Si species encapsulated zeolite is solvated with hydrofluoric acid solution to separate the Si quantum wires by dissolving zeolite lattice. The Si quantum wires in the HF solution show intense PL spectra peaked at 2.33 eV and broad UV spectra around 2.8-3.5 eV. They will have different shapes and lengths. The HF solvated zeolite shows still PL spectra characteristic of oxygen vacancies and the absorption edge at 3.6 eV. The result means that zeolite lattice is solvated in HF solution as clusters with a band gap of 3.6 eV and they can still have some oxygen vacancies. Oxygen vacancies situate about 1.0 eV below the zeolite conduction band minimum, and the absorbed energy can be dissipated as PL between the valence band maximum and the oxygen vacancies. It is concluded that the excitation photon energy can be absorbed in zeolite and the Si quantum wires and then the absorbed energies are competitively relaxed in zeolite and the Si quantum wires.
研究論文（学術雑誌）, 英語

Titania nanoparticles prepared with pulsed laser ablation of rutile single crystals in water
A Iwabuchi; CK Choo; K Tanaka
JOURNAL OF PHYSICAL CHEMISTRY B, AMER CHEMICAL SOC, 108巻, 30号, 掲載ページ 10863-10871, 出版日 2004年07月, 査読付, The pulsed laser ablation (PLA) experiments of rutile single crystal surfaces were carried out in water solution to prepare nanosized titania particles. The solvated PLA species were transparent as produced and changed to a lighter blue solution with some precursors for filamentous species (in several days), then finally changed to white enlarged filamentous species (in 2-4 weeks). The solvated PLA species were measured as uniform nanoparticles with a size below 10 nm by TEM measurements and showed the absorption-photon energy relation for the direct transition with a band gap of 5.3-5.5 eV. The band-gap values were elucidated with quantum confinement size effects. It was assumed that the primary solvated species should have a size of about 1 nm and they were agglomerated to be the secondary species. The Mie scattering is responsible for the "blue" color, which proves that the size enlargement process exists on the PLA species in water. The filamentous species are composed of mainly the anatase form, which was analyzed with Raman spectroscopy. The XPS results indicate that the Ti species are tetravalent and bonded to oxygen atoms with O 1s binding energy at around 530 eV as TiO2. They were found to be composed to about 1 mum diameter with gathering nanosized particles on SEM pictures. The thin films composed of the PLA filamentous species showed no band cap increase. The process for PLA of rutile in water was studied with different temperatures (T in K) to elucidate the effect of viscosity (eta). The yield of PLA species in water decreases nearly linearly with the ratio of T/eta representing the diffusion coefficient of the solvated species. The result implies that the PLA species are confined in a media not diffused into water solution.
研究論文（学術雑誌）, 英語

Photoluminescence intensity enhancement of ion-doped CdWO4 thin films prepared with pulsed laser deposition
CK Choo; S Suzuki; K Tanaka
THIN SOLID FILMS, ELSEVIER SCIENCE SA, 458巻, 1-2号, 掲載ページ 179-185, 出版日 2004年06月, 査読付, Samarium-, nickel- and cesium-ion doped CdWO4 thin films as well as non-doped CdWO4 thin films were prepared by the pulsed laser deposition (PLD) method. The film thickness and the substrate temperature during PLD were changed to study the role of doped ions on the CdWO4 lattice. The crystalline CdWO4 thin films were obtained by PLD on glass substrates at 1073 K. The CdWO4 (002) XRD signal was more intense on the non-doped, Sm- and Ni-doped PLD films. When the substrate temperature was increased to 1273 K, the peak decreased in intensity, and the (111) peak became more intense than the intensity of the (002) on the ion-doped PLD films whereas the (020) signal was still significant on the non-doped thin film. Photoluminescence spectra were deconvoluted into three components at 2.82, 2.54 and 2.27 eV The contribution of the yellow PL component at 2.27 eV was relatively high on the doped PLD films prepared at 1073 K. However, the overall PL spectra features on PLD films prepared at 1273 K were almost the same as the (010) single crystal surface. Photoluminescence intensities on the PLD films prepared at 1273 K were significantly intense and exceeded that on the CdWO4 (010) single crystal surface. (C) 2003 Elsevier B.V. All rights reserved.
研究論文（学術雑誌）, 英語

Pulsed laser ablation of silicon with low laser fluence in a low-pressure of ammonia ambient
CK Choo; M Tohara; K Enomoto; K Tanaka
APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, 228巻, 1-4号, 掲載ページ 120-127, 出版日 2004年04月, 査読付, Silicon was ablated by 532 nm wavelength of Nd:YAG laser in ammonia gas ambient. The influence of laser fluence and gas ambient pressures between 1.33 x 10(1) to 1.33 x 10(-5) Pa on the deposited compound was studied by in situ X-ray photoelectron spectroscopy and transmission Fourier transform infrared spectroscopy techniques. The results indicate that the deposited compound is composed of nonstoichiometric silicon nitride (SiNx, x = 0-0.84). It has been shown that the composition of nitro-en to silicon is sensitive to the laser fluence; it increases with decreasing laser fluence. However, the ammonia gas ambient in these low pressures range had no influence on the composition of the deposited compound. The reaction of the ablated silicon with low-pressure ambient ammonia is proposed to be occurred on the substrate. (C) 2004 Elsevier B.V. All rights reserved.
研究論文（学術雑誌）, 英語

Characterization and preparation of chained Si species in zeolite supercages
K Tanaka; CK Choo; Y Komatsu; K Hamaguchi; M Yamaki; T Itoh; T Nishigaya; R Nakata; K Morimoto
JOURNAL OF PHYSICAL CHEMISTRY B, AMER CHEMICAL SOC, 108巻, 8号, 掲載ページ 2501-2508, 出版日 2004年02月, 査読付, Chained Si species were synthesized in Y-type zeolite supercages by the reaction with phenylsilane (PhSiH(3)) at 423 K. The preparation process was studied with the infrared spectra, and the prepared Si species were characterized with X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectra, and ultraviolet absorption spectra. The initial sticking reaction of SiH(x) species to zeolite framework was studied with a temperature-programmed desorption experiment on the deuterium-exchanged zeolite using a quadrupole mass spectrometer. Benzene molecules composed selectively with d(1) species (C(6)H(5)D) were desorbed with hydrogen molecules at 360-380 K; concurrently, hydroxyl groups in supercages disappeared. These results imply that the initial grafting reaction of Si species to a HY-zeolite framework proceeds through the thermal reaction of PhSiH(3) with hydroxyl groups in supercages at 298 K to yield [O]-SiH(3) and benzene. The formed [O]-SiH(x) species were characterized with infrared spectra as a function of reaction temperature. The wavenumbers shift in Si-H species was explained by the thermal conversion of [O]-SiH(3) (2180 cm(-1)) to [O](2)-SiH(2) (2208 cm(-1)) and [O](3)-SiH (2270 cm(-1)). The reaction of PhSiH(3) molecules with hydroxyl groups in supercages at 423 K suggests the propagation of Si species finally to yield [O](2)-Si(x)H(y). The successive propagation reaction with PhSiH3 yielded Si species with Si 2p XPS signals at 101.4 and 102.3 eV, which could be assigned to polysilane families. The quantitative XPS analysis implied that polysilane families with about 30 Si atoms were produced in a zeolite super cage. The zeolite pressed between metal barrels showed intense PL spectra peaked at 340 (3.6 eV) and 460 nm (2.7 eV). The peak intensities diminished considerably with treatment with oxygen gas at 573 K for 48 h, which caused the selective enhancement of X-ray diffraction intensity at around 2theta = 6degrees, characteristic of a zeolite (111) face. These results induce that surface contaminants such as organic compounds can be removed by the oxygen treatment as well as the zeolite crystallinity is improved by the decrease of oxygen vacancies. Chained Si species in zeolite supercages showed intense PL spectra at around 4 eV. The Si species can be extracted in hexane at 298 K, and the extracted species also showed redshifted intense PL spectra peaked at 4.07 eV. The broad UV spectra due to the polysilane backbone structure was detected at 220-280 nm. It is concluded that polysilane families are formed in zeolite supercages and absorb excitation photon energy and relax to show PL characteristic to the Si backbone structure.
研究論文（学術雑誌）, 英語

Time-resolved photoluminescence on samarium, nickel, and cesium ion doped scintillator CdWO4 (010) single crystal surfaces
K Tanaka; S Suzuki; CK Choo
JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 95巻, 3号, 掲載ページ 1287-1293, 出版日 2004年02月, 査読付, Photoluminescence (PL), cathode luminescence (CL), and x-ray excited luminescence (XL) are studied on Sm-, Ni-, and Cs-doped CdWO4 (010) single crystal surfaces. Luminescence spectra are deconvoluted to three constituent species at 2.77, 2.48, and 2.18 eV. Their intensities of the ion-doped CdWO4 crystals are compared with the undoped crystals. CL and XL intensities on Sm- and Ni-doped single crystals are suppressed to be about 20-40% of the undoped crystal. However, the luminescence component at 2.18 eV is dominant on the Sm-ion doped CdWO4 crystal. The x-ray diffraction peak at (020) face shifts to lower 2theta value on the Sm-ion doped CdWO4 single crystal, indicating that the crystal structure of CdWO4 is disturbed by Sm ions and the distance between (020) faces is enlarged. The distortion of the crystal structure will be induced by the exchange of W6+ ions into Sm3+ ions with larger ion diameter. Time-resolved PL decay analyses are studied on the doped and undoped crystals under excitation below the band gap. While only the slow decay component is detected with a lifetime of 14 mus on the undoped CdWO4 crystal, the fast and the slow PL decay components are detected with a lifetime of 0.7 and 10 mus on the three emission species in the doped CdWO4 crystals, respectively. The Cs-doped CdWO4 crystal has almost the same intensities for PL, CL, and XL as the undoped crystal. (C) 2004 American Institute of Physics.
研究論文（学術雑誌）, 英語

Time-resolved photoluminescence on ion doped CdWO4 thin films prepared with pulsed laser deposition
K Tanaka; S Suzuki; CK Choo
JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 95巻, 3号, 掲載ページ 1294-1300, 出版日 2004年02月, 査読付, Samarium-, nickel-, cesium-ion-doped and -undoped CdWO4 thin films are prepared by pulsed laser deposition (PLD) method. Photoluminescence (PL), cathode luminescence (CL), and x-ray excited luminescence (XL) are studied on these thin films. Luminescence spectra are deconvoluted to three luminescence species typically at 2.77, 2.48, and 2.18 eV. Luminescence intensities and the relative contribution of three deconvoluted components are compared with those on the undoped CdWO4 (010) single crystal surface. PL intensity on the undoped thin film can be compared to that on the (010) single crystal surface. Not only CL and XL intensities but also PL intensity drops drastically on ion-doped CdWO4 thin films. However, the emission component at about 2.2 eV is dominant and the relative contribution of 2.77 eV is diminished on the ion-doped PLD thin films. The x-ray diffraction data indicates that the (002) plane is most intense on these films and the peak shifts to lower 2theta value on the ion-doped CdWO4 thin films. These results imply that these films are polycrystalline and the interplane distance is enlarged on the ion-doped CdWO4 thin films. The stress of the crystal structure is associated with the origin of the PL component at about 2.2 eV which has been assigned to oxygen vacancies such as [WO5](4-) moieties in the crystal. Time-resolved PL decay analyses are studied on the PLD thin films at three wavelengths, 440 nm (2.82 eV), 550 nm (2.25 eV), and 650 nm (1.91 eV). The slow and fast decay component can be detected on the PLD thin films with a decay lifetime of 8-10 and 0.6-0.8 mus, respectively. Comparing to the corresponding CdWO4 (010) single crystal surfaces, the decay time of the slow PL component is decreased on PLD thin films. The PL component with fast decay time will be associated with the strain of CdWO4 crystal structure. (C) 2004 American Institute of Physics.
研究論文（学術雑誌）, 英語

Size selective filtration of silicon nano-structures using AFI AlPO4-5 zeolite pores
CK Choo; K Enomoto; K Tanaka
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, ELSEVIER SCIENCE SA, 104巻, 1-2号, 掲載ページ 73-79, 出版日 2003年11月, 査読付, The ablation of Si has been carried out in the presence of ammonia ambient. Non-stoichiometric (silicon rich) silicon nitride composed of Si-Si, NHx (x = 1.2) and SiHy (y = 1-3) are formed. Photoluminescence at visible region based on these nano-structures was observed at room temperature. AlPO4-5 zeolite was used as substrate. It is shown that zeolite can selectively control the size of the Si nano-structure and the emission wavelength as well, and that the deposited Si-N nano-structures can be migrated into the AlPO4-5 pores by annealing treatment. The photoluminescence red-shifted after annealing suggests that, the Si nano-crystals luminescence is ruled in the luminescence center. A theoretical model is proposed to explain the PL peak shift of the silicon nano-structures. (C) 2003 Elsevier B.V. All rights reserved.
研究論文（学術雑誌）, 英語

Pulsed laser ultrahigh vacuum deposited silicon in the presence of excess cesium and oxygen studied with x-ray photoelectron spectroscopy and atomic force microscopy
CK Choo; K Tanaka; H Suzuki; N Saotome; K Ichida
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, A V S AMER INST PHYSICS, 21巻, 4号, 掲載ページ 874-880, 出版日 2003年07月, 査読付, Si/Cs/O clusters were prepared in an ultrahigh vacuum system with pulsed laser ablation of Si in the presence of Cs vapor and molecular oxygen. The effects of an O-2 ambient, the pressure, and the deposition sequence of Cs and O-2 on the oxidation state of cesium oxides and silicon oxides, as well as on the formation. of Si/Cs/O clusters, were studied with x-ray photoelectron spectroscopy and atomic force microscopy (AFM). Oxygen 1s spectra were deconvoluted to cesium oxide(s) at around 530.5 eV and silicon oxide(s) at 532.3 eV. From the low. binding energy side to the high binding energy, side, Si 2p spectra were assigned to negatively charged Si clusters (94 and 96 eV), silicon suboxide (102 eV), SiO2 (104 eV), and Si/Cs/O clusters (106 eV), respectively. The high binding energy: species was explained by the formation of Si(CsO1+x)(n) clusters. Surface, morphologies were influenced by the oxidation state of cesium oxides and their amount. The work function decrease as much as 0.5+/-0.1 eV was measured with ex situ AFM. (C) 2003 American Vacuum Society.
研究論文（学術雑誌）, 英語

C-60/zeolite semiconductor electrode and the gas sensing
K Tanaka; CK Choo; S Sumi; Y Kamitani; T Fujii; K Satoh; K Fukuda; R Nakata; M Yoshimune; Y Yoshinaga; T Okuhara
JOURNAL OF PHYSICAL CHEMISTRY B, AMER CHEMICAL SOC, 106巻, 16号, 掲載ページ 4155-4161, 出版日 2002年04月, 査読付, Sodium Y type zeolite synthesized with homogeneous gels was deposited as thin films on tantalum toothcombs type electrode. C-60 molecules were deposited on the zeolite electrode surface by sublimation in a vacuum and were encapsulated in zeolite supercages by the thermal diffusion. The encapsulation was indicated by a decrease of the pore volume measured by argon gas adsorption. The potassium deposited K-Cb-60/zeolite electrode as well as zeolite and C-60/zeolite electrodes showed the behaviors characteristic to semiconductors in their measurements of currents in dark with temperature. The dependence of their dark currents on temperature was similar, which suggests that carrier formation through thermal band-gap excitation will be mainly caused by zeolite. The C-60/zeolite and K-C-60/zeolite electrodes showed rapid current responses repeatedly at 298 K under UV light irradiation. The introduction of oxygen gas to the C60/zeolite electrode under UV light irradiation resulted in both rapid and slow current decays with time. The current decreased and that remained in the rapid current decay were interpreted as contributions mainly from n-type (80%) and p-type character (20%), respectively. The slow current decay was interpreted by diffusion of oxygen into zeolite supercages. Ethylene sensing on the C-60/zeolite electrode was possible in dark and showed a pressure dependency of Langmuir type isotherm. The result implies that such sensing is caused by compressing ethylene molecules in zeolite supercages.
研究論文（学術雑誌）, 英語

CaWO4 thin films synthesized by pulsed laser deposition
K Tanaka; K Fukui; K Ohga; CK Choo
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, A V S AMER INST PHYSICS, 20巻, 2号, 掲載ページ 486-491, 出版日 2002年03月, 査読付, Thin films of CaWO4 were synthesized by pulsed laser deposition (PLD) using targets composed of CaO and WO3 oxide mixtures. The crystallinity of CaWO4 thin films strongly depended on PLD conditions, that is, substrate temperature, ambient oxygen pressure, and laser fluence. Congruent thin films with stoichiometry were obtained at 873 K. They showed photoluminescence (PL) at room temperature. PL spectra were characteristic with excitation wavelength, peaked at 440 and 520 nm, which were excited with 340-360 and 300-330 nin, respectively. Cathodeluminescence (CL) spectra could be recorded at room temperature on the PLD thin films and were composed of the same species as observed in PL spectra. Intensity of CL spectra increased drastically after postannealing the PLD thin films at 873 K. PLD experiments were also carried out using CaWO4 targets at the same conditions. Crystalline CaWO4 thin films were obtained much easier than PLD using targets composed of CaO and WO3 oxide mixtures. (C) 2002 American Vacuum Society.
研究論文（学術雑誌）, 英語

超高真空系におけるアルカリ金属蒸着装置の試作
C.K. Choo; 小越 一輝; 田中 勝己
電気通信大学紀要, 電気通信大学, 14巻, 2号, 掲載ページ 177-181, 出版日 2002年, 査読付
研究論文（大学，研究機関等紀要）, 日本語

Sm-doped CdWO4 thin films synthesized by pulsed laser deposition
K Tanaka; K Ohga; CK Choo; R Nakata
JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 90巻, 10号, 掲載ページ 5369-5375, 出版日 2001年11月, 査読付, Samarium doped CdWO4 (Sm-CdWO4) thin films were synthesized by pulsed laser deposition (PLD) using pressed powder targets composed of Sm2O3, CdO, and WO3 mixtures. Congruent, stoichiometric, and crystalline thin films were obtained on glass substrates at 873 K using targets with 0.01 at. % Sm. The x-ray activated photoluminescence (x-ray PL) spectra were redshifted by about 40 nm at 298 K. Changes of the PL component at 2.85 eV into those at 2.20 and 2.52 eV were typical in their convolutions. These PL components showed very similar dependencies on excitation wavelengths, indicating that CdWO4 related PL emissions in the Sm-doped PLD films are relaxed from the same midband excited state. The PL peaks characteristic to Sm3+ had two sidebands shifted to both lower and higher energy sides as much as 0.03 eV. Plume emission spectra were analyzed to elucidate effects of Sm on our PLD processes. It was interpreted that energy transfer should occur between excited neutral Cd to the excited state of Sm3+ in laser plume. (C) 2001 American Institute of Physics.
研究論文（学術雑誌）, 英語

Preparation and evaluation of nitrogen-terminated silicon nanoparticles: laser annealing effect
CK Choo; T Sakamoto; M Tohara; K Tanaka; R Nakata; N Okuyama
SURFACE SCIENCE, ELSEVIER SCIENCE BV, 445巻, 2-3号, 掲載ページ 480-487, 出版日 2000年01月, 査読付, Nitrogen-terminated silicon nanoparticles were synthesized on AFI AlPO4-5 zeolite by pulsed laser ablation of silicon target in the presence of 1.33 x 10(-5) Pa of ammonia and were annealed by multiple laser shots at 532 nm. The samples were characterized by X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy and UV-vis absorption measurements. The results indicate that they are composed of nonstoichiometric silicon nitride nanoparticles as well as silicon species with dangling bonds. NHx (x = 1,2) polyhydride species are dissociated by pulsed laser annealing, which shows the improvement of the silicon and silicon nitride crystallinities. It is suggested that the nanoparticles will agglomerate as clusters after laser annealing. According to the Tauc plot obtained from UV-vis absorption data, a blue shift of band gap energy from bulk silicon was observed. (C) 2000 Elsevier Science B.V. All rights reserved.
研究論文（学術雑誌）, 英語

Oxygen containing silicon clusters on Teflon and their work functions studied with X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy
K Tanaka; T Sakamoto; M Tohara; CK Choo; R Nakata
APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, 148巻, 3-4号, 掲載ページ 215-222, 出版日 1999年07月, 査読付, Silicon species were deposited on tetrafluoroethylene (Teflon) with pulsed laser silicon ablation at 532 nm under UHV. Surface species were studied with X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). Tetrafluorocarbon (CF4) was easily desorbed by the decomposition reaction of Teflon with flying silicon species. Surface species were characterized as a function of pulsed laser shots. Silicon species were terminated with oxygen in gas phase to form two kinds of SiOx clusters (x < 0.3) in addition to oxygen terminated silicon networks. Their work functions could be estimated by the shift of their Fermi energies. (C) 1999 Elsevier Science B.V. All rights reserved.
研究論文（学術雑誌）, 英語

Characterization of nitrogen terminated silicon nanoparticles on AFI zeolite with X-ray and ultraviolet photoelectron spectroscopies
CK Choo; T Sakamoto; K Tanaka; R Nakata
APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, 148巻, 1-2号, 掲載ページ 116-125, 出版日 1999年06月, 査読付, Nitrogen terminated silicon nanoparticles were synthesized on AFI AlPO4-5 zeolite by pulsed Laser ablation of silicon target in the presence of 1.33 x 10(-5) Pa of ammonia, and were characterized in situ by X-ray photoemission spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). Nonstoichiometric silicon nitride and unterminated silicon nanoparticles with size of estimated to be similar to 5.4 Angstrom in diameter were existed. They were found to migrate and diffuse into the AlPO4-5 channels at 373 K and migrate back to the external surface at 503 K. The effect of sample annealing was studied at 373 K. Thr change of silicon surface state (unterminated silicon nanoparticles) to hydride species was observed concurrently with breaking of the NHx species. This result implies that the NHx species remained on the silicon particles form Si3N4 like bonds and the dissociated H-species are bound to the unterminated silicon surface. (C) 1999 Elsevier Science B.V. All rights reserved.
研究論文（学術雑誌）, 英語

Negatively charged subnanometer-sized silicon clusters and their reversible migration into AFI zeolite pores studied with X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy
C Choo; T Sakamoto; K Tanaka; R Nakata; T Asakawa
APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, 140巻, 1-2号, 掲載ページ 126-137, 出版日 1999年02月, 査読付, Subnanometer sized silicon clusters were deposited on AR zeolite (AlPO4-5: one-dimensional channel diameter < 0.73 nm) by pulsed laser ablation of silicon wafer. Their electronic structures were elucidated in situ by X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). Core level Si 2p spectra were analyzed into five components, Si(I) to Si(V). Si(I) and Si(II) species selectively increased with a constant ratio during pulsed laser silicon ablation. Their binding energies (BEs) were below 99.5 eV implying negatively charged states. Charge transfer occurred between silicon clusters and framework oxygen and phosphor ions. It was interpreted that the stability of negative charge is due to large electron affinity of silicon clusters, The intensity of XPS signals decreased as a function of time and at the same time the channels were blocked. These results were interpreted due to migration of silicon clusters into zeolite pores. The estimated activation energy (57 kJ/mol) suggests that rate-determining step of the migration is reflected by a weak adsorbed state of silicon clusters similar to physisorbed state. The silicon clusters were partially oxidized at 573 K, which was interpreted as a driving force of backward migration from zeolite pores to the external surface. The composition of silicon cluster was discussed based on homogeneous dispersion of single species. (C) 1999 Elsevier Science B.V. All rights reserved.
研究論文（学術雑誌）, 英語

NOプローブ分子を用いた光電子分光法(XPS,UPS)によるN-doped a-C薄膜の表面構造の評価
村田悠馬; 中山廉平; 小野洋; チュウチャオキョン; 田中勝己
口頭発表（一般）, 日本語, 第77回応用物理学会秋季学術講演会, 国内会議
発表日 2016年09月16日

液相PLA法を用いたSrTi1-xCoxO3光触媒薄膜の作製及び評価２
市原文彦; 村田悠馬; 小野洋; Choo Cheow-Keong; 田中勝己
口頭発表（一般）, 日本語, 第63回応用物理学会春季学術講演会, 国内会議
発表日 2016年03月20日

光電子分光法を用いたN-doped a-C薄膜の電荷状態の解析
村田悠馬; 市原文彦; 中山廉平; 小野洋; Choo Chew-keong; 桑原大介; 田中勝己
口頭発表（一般）, 日本語, 第63回応用物理学会春季学術講演会, 国内会議
発表日 2016年03月20日

液相PLA法を用いたSrTi1-xCoxO3光触媒薄膜の作製及び評価
市原文彦; 村田悠馬; 小野洋; Choo Cheow-Keong; 田中勝己
口頭発表（一般）, 日本語, 第76回応用物理学会秋季学術講演会, 国内会議
発表日 2015年09月16日

13C,1H固体NMRを用いたN-doped DLC薄膜の構造解析
村田悠馬; Choo Cheow-keong; 小野洋; 桑原大輔; 田中勝己
口頭発表（一般）, 日本語, 第75回応用物理学会秋季学術講演会
発表日 2014年09月19日

CoドープSrTiO3の可視光下での光触媒活性
市原文彦; 小野 洋; Choo Cheow-Keong; 田中勝己
口頭発表（一般）, 日本語, 第75回応用物理学会秋季学術講演会
発表日 2014年09月18日

光電子分光法を用いたN-doped DLC薄膜の評価
村田悠馬; 市原文彦; 小野洋; Choo Chew-keong; 桑原大介; 田中勝己
口頭発表（一般）, 日本語, 第76回応用物理学会秋季学術講演会
発表日 2014年09月15日

Characterization of N-doped DLC thin films prepared by hydrocarbons pyrolysis method
Y. Murata; C-K. Choo; H. Ono; Y. Nagai; K. Tanaka
口頭発表（一般）, 英語, International Conference on Diamond and Carbon Materials, 国際会議
発表日 2014年09月10日

熱分解法によるNドープDLC薄膜の作製・評価
村田悠馬; 小野洋; チュウ・チャオキョン; 永井豊; 田中勝己
口頭発表（一般）, 日本語, 第 74 回応用物理学会秋季学術講演会
発表日 2013年09月18日

音叉型水晶振動子による単結晶グラファイト基板上4Heのスリップ現象の観測(IV)
岡村衡; 野田啓; 谷口淳子; C.K.Choo; 鈴木勝
口頭発表（一般）, 日本語, 日本物理学会,第68回年次大会, 国内会議
発表日 2013年03月29日

液相レーザーアブレーション法を用いた SrTiO_3_微粒子の作製と評価
居超; Choo Cheow-Keong; 永井 豊; 田中 勝己
口頭発表（一般）, 日本語, 第73回応用物理学会学術講演会,第73回応用物理学会学術講演会
発表日 2012年09月

液相 PLA 法による Si ナノ微粒子の作製と物性評価
船原 一祥; Choo Cheow-Keong; 永井 豊; 田中 勝己
口頭発表（一般）, 日本語, 第73回応用物理学会学術講演会,第73回応用物理学会学術講演会
発表日 2012年09月

気相 PLA 法による Bi3+ドープ型 CaWO4 薄膜の作製と発光特性の評価
伊藤喜浩; Choo Cheow-Keong; 永井 豊; 田中 勝己
口頭発表（一般）, 日本語, 第73回応用物理学会学術講演会,第73回応用物理学会学術講演会
発表日 2012年09月

触媒を用いたメタンの熱分解による Diamond Like Carbon 薄膜の作製
西永 泰隆; Choo Cheow-Keong; 永井 豊; 田中 勝己
口頭発表（一般）, 日本語, 第73回応用物理学会学術講演会,第73回応用物理学会学術講演会
発表日 2012年09月

大高正嗣，C.K.Choo，永井 豊，田中 勝己
大高正嗣; C.K.Choo; 永井 豊; 田中 勝己
口頭発表（一般）, 日本語, 第59回応用物理学関係連合講演会
発表日 2012年03月

強靭耐摩耗用ＤＬＣ膜
C.K. Choo; 田中 勝己
口頭発表（招待・特別）, 日本語, 三遠南信クラスター推進会議, 三遠南信クラスター推進会議、浜松商工会議所、はままつ産業創造センター、(独)科学技術振興機構ＪＳＴイノベーションサテライト茨城・静岡
発表日 2012年01月

酸素欠陥型 CaWO_4_ の物性と光触媒活性
太田 淳; C.K.Choo; 永井 豊; 田中 勝己
口頭発表（一般）, 日本語, 第71回応用物理学会学術講演会
発表日 2010年09月

液相レーザーアブレーションで作製した TiO_2_微粒子の光触媒活性
戸松靖博; C.K.Choo; 永井豊; 田中勝己
口頭発表（一般）, 日本語, 第71回応用物理学会学術講演会(講演予稿集),第71回応用物理学会学術講演会
発表日 2010年09月

Bi系複合酸化物の作製と光触媒評価
戸水謙治; 永井 豊; Choo C.K; 田中勝己
口頭発表（一般）, 日本語, 第71回応用物理学会学術講演会
発表日 2010年09月

超高真空熱アニーリング法によるSiナノ微粒子の作製と評価
袁 群; Cheow-Keong Choo; 永井 豊; 田中勝己
口頭発表（一般）, 日本語, 第70回応用物理学会学術講演会
発表日 2009年09月

炭化水素熱分解法で作製したDLC膜の顕微ラマン分析
古川 徹; Cheow-Keong Choo; 永井 豊; 田中勝己
口頭発表（一般）, 日本語, 第70回応用物理学会学術講演会
発表日 2009年09月

水中レーザーアブレーションで作製したチタニア微粒子によるメチレンブルー光分解反応
高尾 誠; チュウ チャオキョン; 田中 勝己
口頭発表（一般）, 日本語, 第25回表面科学講演大会,第25回表面科学講演大会
発表日 2006年09月

不純物ドープを目指した酸化チタンの作製とその物性評価
田辺明良; 田中勝己; C.K.Choo
口頭発表（一般）, 日本語, 第９４回触媒討論会
発表日 2004年

水中PLD法によるTiO_2_ナノ微粒子の作製と評価
岩淵 明; C.K. Choo; 田中 勝己
口頭発表（一般）, 日本語, 第９４回触媒討論会
発表日 2004年

ゼオライトケージ内Si微粒子の特性
佐藤 聖子; 桑原 大介; C.K. Choo; 田中 勝己
口頭発表（一般）, 日本語, 第６５回応用物理学術講演会
発表日 2004年

レーザーアブレーション法により作製した K/O/Si 表面化合物の評価
須澤 大輔; C.K. Choo; 田中 勝己
口頭発表（一般）, 日本語, 第６５回応用物理学術講演会
発表日 2004年

レーザーアブレーション法を用いた不純物ドープダングステン酸化膜の作製と評価
吉井 貴志; C.K. choo; 田中 勝己
口頭発表（一般）, 日本語, 第64回応用物理学会学術講演会
発表日 2003年08月

水溶液中のレーザーアブレーションで作製したTiO_2_微粒子の物性評価 : その3
岩渕 明; 田辺 明良; 清田 智子; 難波 健介; C.K. Choo; 田中 勝己
口頭発表（一般）, 日本語, 第64回応用物理学会学術講演会
発表日 2003年08月

レーザーアブレーションによるSi/K/O表面化合物の形成に関する評価
田中 貴臣; 須沢 大輔; C.K. Choo; 田中 勝己
口頭発表（一般）, 日本語, 第64回応用物理学会学術講演会
発表日 2003年08月

CdWO_4_薄膜の発光波長制御
田中 勝己; 鈴木 聡史; C.K. Choo
口頭発表（一般）, 日本語, 日本化学会第83春季年会
発表日 2003年03月

水溶液中のレーザーアブレーションで作製したTiO_2_微粒子の物性評価 : その２
岩渕 明; 田辺 明良; 清田 智子; 難波 健介; C.K. Choo; 田中 勝己
口頭発表（一般）, 日本語, 第50回応用物理学関係連合講演会
発表日 2003年03月

レーザーアブレーションによるKO_2_からの脱離種に関する評価
田中 貴臣; 須澤 大輔; C.K. Choo; 田中 勝己
口頭発表（一般）, 日本語, 第50回応用物理学関係連合講演会
発表日 2003年03月

水溶液中のレーザーアプレーション法で作製したTiO_2_微粒子の物性評価
岩渕 明; C.K. Choo; 田中 勝己
口頭発表（一般）, 日本語, 第63回応用物理学会学術講演会
発表日 2002年09月

レーザーアブレーション法を用いたCsトープCdWO_4_薄膜の作製と評価
吉井 貴志; 鈴木 聡史; C.K. choo; 田中 勝己
口頭発表（一般）, 日本語, 第63回応用物理学会学術講演会
発表日 2002年09月

テフロン基板上のセシウム酸化物の安定性
小越 一輝; C.K. Choo; 田中 勝己
口頭発表（一般）, 日本語, 第63回応用物理学会学術講演会
発表日 2002年09月

アンモニアで終端シリコン微粒子の評価
榎本和弘; 小越一輝; 戸原誠人; C.K. Choo; 田中勝己
口頭発表（一般）, 日本語, 第49回応用物理学関係連合講演会
発表日 2002年03月

テフロン基板上のセシウム酸化物に関する研究
小越一輝; C.K. Choo; 田中勝己
口頭発表（一般）, 日本語, 第49回応用物理学関係連合講演会
発表日 2002年03月

レーザーアブレーション法で作成した窒素終端シリコン微粒子の評価
榎本和弘; 小越一輝; 戸原誠人; C.K. Choo; 田中勝己
口頭発表（一般）, 日本語, 第62回応用物理学会学術講演会
発表日 2001年09月

ゼオライト細孔内へのSi微細構造の作製と発光特性
小松友子; 浜口宏治; 山来雅弘; 伊東知仁; C.K. Choo; 田中勝己
口頭発表（一般）, 日本語, 第62回応用物理学会学術講演会
発表日 2001年09月

MO_x_/CdO/WO_3_ 系ターゲットからのプルーム発光スペクトル解析（M = 希土類など）
鈴木聡史; 大賀功一; C.K. Choo; 田中勝己
口頭発表（一般）, 日本語, 第62回応用物理学会学術講演会
発表日 2001年09月

レーザーアブレーション法によるCd_1-x_Sm_x_WO_4_の薄膜の作成と発光特性
大賀功一; C. K. Choo; 田中勝己
口頭発表（一般）, 日本語, 第61回応用物理学会学術講演会
発表日 2000年09月

C_60_/NaYゼオライトのガス応答特性
鷲見聖二; 神谷美行; C. K. Choo; 田中勝己
口頭発表（一般）, 日本語, 第61回応用物理学会学術講演会
発表日 2000年09月

ゼオライト内へのシリコン種の作成プロセスとその発光特性
濱口宏治; 山来雅弘; 伊東知仁; C. K. Choo; 田中勝己
口頭発表（一般）, 日本語, 第61回応用物理学会学術講演会
発表日 2000年09月

光電子分光法を用いた窒素終端シリコン微粒子の状態分析
戸原 誠; チュウ チャオキョン; 佐藤 千嘉夫; 田中 勝己
口頭発表（一般）, 日本語, 第60回応用物理学会学術講演会
発表日 1999年09月

窒素終端Si微粒子の作成と評価：レーザーアニーリング効果
チュウ チャオキョン; 坂本 隆; 田中 勝己; 中田 良平
口頭発表（一般）, 日本語, 第46回応用物理学関係連合講演会
発表日 1999年03月

シリコン及び窒素終端シリコン微粒子のテフロン上への作製とその評価
坂本 隆; 戸原 誠; チュウ チャオキョン; 田中 勝己
口頭発表（一般）, 日本語, 第59回応用物理学会学術講演会
発表日 1998年09月

アンモニアを用いた窒素終端Si超微粒子の作成と評価
チュウ チャオキョン; 坂本 隆; 田中 勝己; 中田 良平
口頭発表（一般）, 日本語, 第45回応用物理学関係連合講演会
発表日 1998年03月

ゼオライトAlPO_4_-5を用いたSi超微粒子の作成と評価
チュウ チャオキョン; 田中 勝己; 中田 良平
口頭発表（一般）, 日本語, 第57回応用物理学会学術講演会
発表日 1997年09月

日本の科学と技術A
2019年04月 - 現在
電気通信大学, 学部教養科目, 日本国

環境工学
2017年04月 - 現在
電気通信大学, 基盤理工（III類）, 学部専門科目, 日本国

大学院海外語学研修 II
2017年04月 - 現在
電気通信大学, 英語で開講する科目, 大学院教養科目, 日本国

大学院海外語学研修 I
2017年04月 - 現在
電気通信大学, 英語で開講する科目, 大学院教養科目, 日本国

UEC Academic Skills II (Information Literacy and Research) 前期
2014年04月 - 現在
電気通信大学, 英語で開講する国際科目、西東京三大学連携科目, 学部教養科目, 日本国

UEC Academic Skills II (Information Literacy and Research) 後期
2014年04月 - 現在
電気通信大学, 英語で開講する国際科目、西東京三大学連携科目, 学部教養科目, 日本国

UEC Academic Skills III (Publishing Literacy and Research) 前期
2014年04月 - 現在
電気通信大学, 英語で開講する国際科目、西東京三大学連携科目, 学部教養科目, 日本国

UEC Academic Skills III (Publishing Literacy and Research) 後期
2014年04月 - 現在
電気通信大学, 英語で開講する国際科目、西東京三大学連携科目, 学部教養科目, 日本国

UEC Academic Skills I (Computer Literacy) 後期
2014年04月 - 現在
電気通信大学, 英語で開講する国際科目、西東京三大学連携科目, 学部教養科目, 日本国

UEC Academic Skills I (Computer Literacy) 前期
2014年04月 - 現在
電気通信大学, 英語で開講する国際科目、西東京三大学連携科目, 学部教養科目, 日本国

シリコンテクノロジー分科会

応用物理学会

常圧炭化水素熱分解による金属上の機能性炭素材料作製と評価
田中 勝己
メタンとアルゴンの混合ガスを１気圧下で金属基板上に800～1100℃で反応させDLC薄膜を作製した。金属基板として、純度99.5％と99.99％の2種類の鉄と鋼材SCM440を用いた。表面生成物を顕微ラマン分光法、硬度測定、SEMによる膜厚測定から評価した。800℃で硬度900以上、膜厚3～6μmのDLC膜の合成に成功した。純度の低い鉄基板の場合、バルク中の酸素原子が表面に拡散し酸化鉄を生成する場合のある事が分かった。条件を変えることで純度の低い鉄基板の場合においてもDLC膜の合成が可能であった。DLC膜と金属基板の結合を強固にする界面層の構造についてラマン測定から解明する事を試みた。
研究期間 2012年04月01日 - 2015年03月31日

触媒反応解析
（株）キャンパスクリエイト
研究期間 2013年 - 2014年

薄膜分析のFTIRによる分析と評価
C.K. Choo
日野自動車株式会社, 研究代表者, 企業からの受託研究
研究期間 2012年 - 2012年

METAL WITH DIAMOND-LIKE CARBON FILM, AND METHOD FOR FORMING DIAMOND-LIKE CARBON FILM
特許権, 田中 勝己, CHOO, CHEOW KEONG, PCT/JP2012/065527, 出願日: 2012年06月18日, 田中 勝己, Choo Cheow Keong 電気通信大学, WO2013/011784, 公開日: 2013年01月24日, US2014/0193594A11, 公表日: 2014年07月10日, EP2735624, 発行日: 2018年08月01日

ダイヤモンドライクカーボン膜の形成方法
特許権, 田中 勝己, チュウ チャオ キョン, 特許2012-087395, 出願日: 2012年04月06日, 田中勝己、チュウチャオキョン, 特開2013-040400, 公開日: 2013年02月28日, 特許第5896463, 発行日: 2016年03月11日

ダイヤモンドライクカーボン膜の成膜装置および形成方法
特許権, 西永 泰隆, 田中 勝己, チュウ チャオ キョン, 特許2014-98357(P2014-98357), 出願日: 2014年05月12日, 504133110 国立大学法人電気通信大学, 特開2014-237890(P2014-237890A), 公開日: 2014年12月18日, 【課題】成膜に要する時間を短縮することができ、且つ膜品質を向上させることが可能なダイヤモンドライクカーボン膜の成膜装置およびその形成方法を提供する。
【解決手段】ガス制御部２２は、流動経路１４が成膜温度に達するまで、キャリアガスをキャリアガス供給源２０から流動経路１４に供給するように制御すると共に、流動経路１４が成膜温度に達した際に、炭素源が所定濃度で含まれるように、成膜用ガスをキャリアガス供給源２０および炭化水素ガス供給源１８から流動経路１４に所定流量で供給するように制御するように構成されている。

光触媒材料およびその製造方法
特許権, 田中 勝己, チュウ チャオキョン, 太田 淳, 特願2009-14575, 出願日: 2009年06月16日, 国立大学法人 電気通信大学, 特開2011-000506, 公開日: 2011年01月06日, 特許第5582522号, 発行日: 2014年07月25日

MgIn2O4の製造方法及びMgIn2O4材料
特許権, 田中 勝己, チュウ チャオキョン, 小林 理恵, 特願2009-143576, 出願日: 2009年06月16日, 国立大学法人 電気通信大学, 特開2011-001208, 公開日: 2011年01月06日, 特許第5294207号, 発行日: 2013年06月21日

ダイヤモンドライクカーボン膜の製造方法
特許権, 中村 恭子, チュウ チャオキョン, 田中 勝己, 特願2007-106493, 出願日: 2007年04月13日, 特開2008-260670, 公開日: 2008年10月30日, 特許第5240978号, 発行日: 2013年04月12日

ダイヤモンドライクカーボン膜の形成方法およびダイヤモンドライクカーボン膜付き金属物
特許権, Choo Cheow Keong, 田中 勝己, 特願2011-160258, 出願日: 2011年07月21日, 電気通信大学, 特開2013-040400, 公開日: 2013年02月28日

触媒を用いたCH4の熱分解によるDLC膜の作製
特許権, 飯島 貴之, チュウ チャオキョン, 田中 勝己, 特願2005-036870, 出願日: 2005年02月14日, 特開2005-226162, 公開日: 2005年08月25日, 特許第5002803号, 発行日: 2012年06月01日

酸化チタン薄膜の製造方法及び酸化チタン薄膜を有する樹脂製品
特許権, 又賀 純一郎, チュウ チャオキョン, 田中 勝己, 特願2007-106277, 出願日: 2007年04月13日, 特開2008-260667, 公開日: 2008年10月30日, 特許第4919505号, 発行日: 2012年02月10日

アナターゼ型酸化チタン微粒子及びアナターゼ型酸化チタン微粒子の製造方法
特許権, チュウ チャオキョン, 田中 勝己, 特開2007-210787, 出願日: 2007年08月13日, 特開2009-046317, 公開日: 2009年03月05日