修士（工学）, 電気通信大学

Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering

Nanotechnology/Materials, Thin-film surfaces and interfaces

Nanotechnology/Materials, Crystal engineering

Nanotechnology/Materials, Applied materials

1992
The University of Electro-Communications, 電気通信学研究科, 電子工学専攻, Japan

1992
The University of Electro-Communications, Graduate School, Division of Electro Communications

1991
The University of Electro-Communications, Faculty of Electro-Communications, Department of Electronic Engineering, Japan

1991
The University of Electro-Communications, Faculty of Electro Communications

Surface electromigration of in-covered Si high-index surfaces
K Sakamoto; Y Matsubayashi; M Shimada; T Yamada; A Natori; H Yasunaga
To clarify the role of facet in electromigration on the vicinal Si(0 0 1), we investigated in this study surface mass transport of In on Si high-index (1 0 3) and vicinal (0 0 1) surfaces, using scanning Auger microscope, low energy electron diffraction (LEED) and atomic force microscope (AFM). In parallel with (1 0 3), we also investigated similarly the most stable high-index (1 1 3) of Si for reference. Specimens with a large area of these surfaces were prepared from Si(0 0 1) wafer by cutting, grinding and polishing. No surface electromigration of In on Si(1 0 3) surface was observed at any temperature, while In overlayer exhibited a typical Stranski-Krastanov mode of growth. This fact strongly suggests that In adatoms move around over the intermediate layer, but there is no driving force of electromigration on them. The electromigration on the vicinal Si(0 0 1) depended upon the off-angle. It was most enhanced with the off-angle of around 4degrees. Based upon these results a model is proposed to explain the puzzling electromigration of In on vicinal Si(0 0 1). We found out that In on Si(1 1 3) exhibited a normal surface electromigration towards cathode. (C) 2003 Published by Elsevier Science B.V., ELSEVIER SCIENCE BV, May 2003, APPLIED SURFACE SCIENCE, 212, 249-254, English, 0169-4332, WOS:000183967200047

Surface electromigration of in-covered Si high-index surfaces
K Sakamoto; Y Matsubayashi; M Shimada; T Yamada; A Natori; H Yasunaga
To clarify the role of facet in electromigration on the vicinal Si(0 0 1), we investigated in this study surface mass transport of In on Si high-index (1 0 3) and vicinal (0 0 1) surfaces, using scanning Auger microscope, low energy electron diffraction (LEED) and atomic force microscope (AFM). In parallel with (1 0 3), we also investigated similarly the most stable high-index (1 1 3) of Si for reference. Specimens with a large area of these surfaces were prepared from Si(0 0 1) wafer by cutting, grinding and polishing. No surface electromigration of In on Si(1 0 3) surface was observed at any temperature, while In overlayer exhibited a typical Stranski-Krastanov mode of growth. This fact strongly suggests that In adatoms move around over the intermediate layer, but there is no driving force of electromigration on them. The electromigration on the vicinal Si(0 0 1) depended upon the off-angle. It was most enhanced with the off-angle of around 4degrees. Based upon these results a model is proposed to explain the puzzling electromigration of In on vicinal Si(0 0 1). We found out that In on Si(1 1 3) exhibited a normal surface electromigration towards cathode. (C) 2003 Published by Elsevier Science B.V., ELSEVIER SCIENCE BV, May 2003, APPLIED SURFACE SCIENCE, 212, 249-254, English, 0169-4332, WOS:000183967200047

UHV-SEMを用いたVicinal Si(001)表面エレクトロマイグレーションの その場観察
2003, 日本物理学会講演概要集

Surface Electromigration Analysis for using Multi-electrodes Method
2002

Surface Electromigration Analysis for using Multi-electrodes Method
2002

Structure analysis of oxygen-adsorbed tungsten (001) surface
H Yamazaki; T Kamisawa; T Kokubun; T Haga; S Kamimizu; K Sakamoto
Structure of the tungsten (001) surface annealed at 1200 K for the saturation coverage of oxygen, W(001)-2 x 1-O, has been studied by low-energy electron diffraction (LEED) and the symmetrized automated tenser LEED program, The optimized structure is that with missing rows of tungsten atoms and double rows of oxygen atoms. The layer separation between the oxygen atom and the topmost tungsten atom layer is 0.50 +/- 0.06 Angstrom, the distance between oxygen rows is 2.4 +/- 0.3 Angstrom and all other separations between tungsten atoms are the same as bulk values. The distance between the oxygen atom and the tungsten atom agrees weil with sum of atomic radii of oxygen and tungsten. Oxygen atoms are located in the threefold hollow site at the tungsten (011) facet appearing on the tungsten (001) surface with missing rows. (C) 2001 Elsevier Science B.V. Ail rights reserved., ELSEVIER SCIENCE BV, Apr. 2001, SURFACE SCIENCE, 477, 2-3, 174-178, English, 0039-6028, 80012419846, WOS:000168314500013

Structure analysis of oxygen-adsorbed tungsten (001) surface
H Yamazaki; T Kamisawa; T Kokubun; T Haga; S Kamimizu; K Sakamoto
Structure of the tungsten (001) surface annealed at 1200 K for the saturation coverage of oxygen, W(001)-2 x 1-O, has been studied by low-energy electron diffraction (LEED) and the symmetrized automated tenser LEED program, The optimized structure is that with missing rows of tungsten atoms and double rows of oxygen atoms. The layer separation between the oxygen atom and the topmost tungsten atom layer is 0.50 +/- 0.06 Angstrom, the distance between oxygen rows is 2.4 +/- 0.3 Angstrom and all other separations between tungsten atoms are the same as bulk values. The distance between the oxygen atom and the tungsten atom agrees weil with sum of atomic radii of oxygen and tungsten. Oxygen atoms are located in the threefold hollow site at the tungsten (011) facet appearing on the tungsten (001) surface with missing rows. (C) 2001 Elsevier Science B.V. Ail rights reserved., ELSEVIER SCIENCE BV, Apr. 2001, SURFACE SCIENCE, 477, 2-3, 174-178, English, 0039-6028, 80012419846, WOS:000168314500013

低温における酸素吸着W（001）表面の構造解析
2001, 日本物理学会講演概要集, 56, 2第4分冊

Surface electromigration of In on vicinal Si(001)
K Sakamoto; NJ Wu; A Natori; H Yasunaga
Surface mass transport of In film on vicinal Si(0 0 1) has been systematically investigated by a scanning Auger electron microscopy (SAM), low energy electron diffraction (LEED) and atomic force microscopy (AFM). It was observed that the temperature dependence of the mass transport shows the critical phenomenon. Above a critical temperature T-c, surface electromigration of the In film toward the cathode side dominated the surface mass transport on the vicinal Si(0 0 1) surface. The LEED and AFM observations revealed that the In film surface on the vicinal Si(0 0 I) consists of 3 x 4 terraces and (3 1 0) facets. The area ratio of the facet to the terrace exhibited abrupt an increase at T-c. It is believed that the change of the mass transport is related to the abrupt change of the area ratio of the facet to the terrace. Both the critical temperature T-c and the spread due to the surface electromigration of the In film depended on the configuration of the DC current direction and the step edge. (C) 2001 Published by Elsevier Science B.V., ELSEVIER SCIENCE BV, Jan. 2001, APPLIED SURFACE SCIENCE, 169, 480-484, English, 0169-4332, WOS:000167087700098

Surface electromigration of Au ultrathin film on MoS2
NJ Wu; S Shimizu; MT Hermie; K Sakamoto; A Natori; H Yasunaga
The mass transport of Au ultrathin film on a semiconductor MoS2 was investigated by atomic force microscopy (AFM) and scanning Auger microscopy (SAM). The surface electromigration of the Au film was found when a de current was passed through the MoS2 substrate. The Au ultrathin film on MoS2 grew in a typical Volmer-Weber (V-W) growth mode, The AFM measurements indicated that the distribution of the Au islands exhibited clearly a preferential lateral spread towards the cathode, that is, the surface electromigration took place. The direction of the surface electromigration on MoS2 is opposite to that of the Au electromigration on Si. (C) 2001 Elsevier Science B.V. All rights reserved., ELSEVIER SCIENCE BV, Jan. 2001, APPLIED SURFACE SCIENCE, 169, 485-488, English, 0169-4332, WOS:000167087700099

Surface electromigration of In on vicinal Si(001)
K Sakamoto; NJ Wu; A Natori; H Yasunaga
Surface mass transport of In film on vicinal Si(0 0 1) has been systematically investigated by a scanning Auger electron microscopy (SAM), low energy electron diffraction (LEED) and atomic force microscopy (AFM). It was observed that the temperature dependence of the mass transport shows the critical phenomenon. Above a critical temperature T-c, surface electromigration of the In film toward the cathode side dominated the surface mass transport on the vicinal Si(0 0 1) surface. The LEED and AFM observations revealed that the In film surface on the vicinal Si(0 0 I) consists of 3 x 4 terraces and (3 1 0) facets. The area ratio of the facet to the terrace exhibited abrupt an increase at T-c. It is believed that the change of the mass transport is related to the abrupt change of the area ratio of the facet to the terrace. Both the critical temperature T-c and the spread due to the surface electromigration of the In film depended on the configuration of the DC current direction and the step edge. (C) 2001 Published by Elsevier Science B.V., ELSEVIER SCIENCE BV, Jan. 2001, APPLIED SURFACE SCIENCE, 169, 480-484, English, 0169-4332, WOS:000167087700098

Surface electromigration of Au ultrathin film on MoS2
NJ Wu; S Shimizu; MT Hermie; K Sakamoto; A Natori; H Yasunaga
The mass transport of Au ultrathin film on a semiconductor MoS2 was investigated by atomic force microscopy (AFM) and scanning Auger microscopy (SAM). The surface electromigration of the Au film was found when a de current was passed through the MoS2 substrate. The Au ultrathin film on MoS2 grew in a typical Volmer-Weber (V-W) growth mode, The AFM measurements indicated that the distribution of the Au islands exhibited clearly a preferential lateral spread towards the cathode, that is, the surface electromigration took place. The direction of the surface electromigration on MoS2 is opposite to that of the Au electromigration on Si. (C) 2001 Elsevier Science B.V. All rights reserved., ELSEVIER SCIENCE BV, Jan. 2001, APPLIED SURFACE SCIENCE, 169, 485-488, English, 0169-4332, WOS:000167087700099

半導体MoS2表面上のAu表面エレクトロマイグレーション
1999, 第46回応用物理学関連連合講演会, 684

In/Si（001）のファセット形成と表面エレクトロマイグレーション
1999, 第46回応用物理学関連連合講演会, 681

エレクトロマイグレーションによるシリコン表面加工
1999, 電気通信大学サテライトベンチャービジネスラボラトリー，平成10年度研究成果報告要旨集, 45

アニールした酸素吸着Ｗ（001）表面の構造解析
1999, 日本物理学会講演概要集, 54, 2第4分冊, 821

Structure Analysis of Hydrogen-Adsorbed V（001）
1999, Surface 真空（増刊）, 42, 53

ELECTROMIGRATION OF Au ULTRATHIN FILM ON MoS2 SURFACE
1999, Vacuum and Surface Sciences Conference of Asia and Australia（Tokyo）

SURFACE ELECTROMIGRATION OF In ON VICINAL Si（001）
1999, Vacuum and Surface Sciences Conference of Asia and Australia（Tokyo）

Structure Analysis of Hydrogen-Adsorbed V（001）
1999, Surface 真空（増刊）, 42, 53

ELECTROMIGRATION OF Au ULTRATHIN FILM ON MoS2 SURFACE
1999, Vacuum and Surface Sciences Conference of Asia and Australia（Tokyo）

SURFACE ELECTROMIGRATION OF In ON VICINAL Si（001）
1999, Vacuum and Surface Sciences Conference of Asia and Australia（Tokyo）

MoS₂表面上の金属質量輸送
1998, 第18回表面科学講演大会, 97

微斜面Si（001）面上のIn表面エレクトロマイグレーション
1998, 第18回表面科学講演大会, 96

日本物理学会