工学修士, 東京大学

工学博士, 東京大学

LSI reliability

CVD diamond

ZnO EL

Erbium 1.54micron luminescent diode

Silicon photonics

ＬＳＩ信頼性

ＣＶＤダイヤモンド

ＺｎＯ

エルビウム１．５４μｍ発光ダイオード

シリコンフォトニクス

Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electronic devices and equipment

Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering

01 Apr. 2006
電気通信大学, 電気通信学部教授

01 Apr. 2004 - 31 Mar. 2006
電気通信大学, 電気通信学部 理事・副学長 (電気通信学部教授兼務）

01 Apr. 2003 - 31 Mar. 2004
電気通信大学, 副学長(兼務）

Mar. 1971
The University of Tokyo, Graduate School, Division of Engineering, 電子工学専攻

Mar. 1968
The University of Tokyo, Graduate School, Division of Engineering, 電子工学専攻

Mar. 1966
The University of Tokyo, Faculty of Engineering, 電子工学科

1999
日本電子部品信頼性センター功労賞

Toward small size waveguide amplifiers based on erbium silicate for silicon photonics
Hideo Isshiki; Thdamasa Kimura
IEICE TRANSACTIONS ON ELECTRONICS, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E91C, 2, 138-144, Feb. 2008, Peer-reviwed, Integration of light sources on a Si chip is one of milestone to establish new paradigm of LSI systems, so-called "silicon photonics." In recent years remarkable progress has been made in the Si wire waveguide technologies for optical interconnection on a Si chip. In this paper, several Er embedded materials based on silicon are surveyed from the standpoint of application to the light emission and amplification devices for silicon photonics. We have concentrated to investigate an erbium silicate (Er2SiO5) as a light source medium for silicon photonics. To mention the particular features, this material has a layered structure with 0.86-nm period and a large amount of Er (25at%) as its constituent. The single crystalline nature gives several remarkable properties for the application to silicon photonics. We also discuss our recent studies of Er2SiO5 and a possibility of the shorter waveguide amplifier.
Scientific journal, English

Toward small size waveguide amplifiers based on erbium silicate for silicon photonics
Hideo Isshiki; Thdamasa Kimura
IEICE TRANSACTIONS ON ELECTRONICS, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E91C, 2, 138-144, Feb. 2008, Peer-reviwed, Integration of light sources on a Si chip is one of milestone to establish new paradigm of LSI systems, so-called "silicon photonics." In recent years remarkable progress has been made in the Si wire waveguide technologies for optical interconnection on a Si chip. In this paper, several Er embedded materials based on silicon are surveyed from the standpoint of application to the light emission and amplification devices for silicon photonics. We have concentrated to investigate an erbium silicate (Er2SiO5) as a light source medium for silicon photonics. To mention the particular features, this material has a layered structure with 0.86-nm period and a large amount of Er (25at%) as its constituent. The single crystalline nature gives several remarkable properties for the application to silicon photonics. We also discuss our recent studies of Er2SiO5 and a possibility of the shorter waveguide amplifier.
Scientific journal, English

Demonstration of ErSiO superlattice crystal waveguide toward optical amplifiers and emitters
H. Isshiki; T. Ushiyama; T. Kimura
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, WILEY-V C H VERLAG GMBH, 205, 1, 52-55, Jan. 2008, Peer-reviwed, ErSiO superlattice crystal (SC) waveguide is demonstrated. ErSiO-SC film was formed on a SiO2/Si substrate. After the ErSiO preform formation by sol-gel method, high temperature anneal for the crystallization was performed in Ar atmosphere. Then the ErSiO-SC layer thickness is 220 nm. Then refractive index of ErSiO-SC was estimated to be 1.8 by ellipsometry and reflection spectroscopy measurements. To obtain the lateral optical confinement, polymer cladding layer (n = 1.54) was coated on the ErSiO-SC film and the strip-loaded structures with 5 pin width were formed by focused ion beam (FIB) etching. The optical confinement factor F of the ErSiO-SC waveguide layer was estimated to be 0.42, assuming the lateral confinement factor was 1 because of the sufficient wide waveguide fort he light . Optical pumping was performed by using a 1480 nm laser diode through the lensed fiber. The pumping power is 30 mW at the fiber input. Green light emissions corresponding to 4f intra-shell transitions from S-4(3/2) and H-2(11/2) to I-4(15/2) in the Er3+ ions, indicating cooperative upconversion in the ErSiO-SC waveguide, can be observed by using a conventional CCD system at room temperature. The upconversion emission behaviour through the waveguide with a photon trap for the 1480 nm light reveals that the 1480 nm pumping light is well-confined into the waveguide. The cooperative upconversion as the gain limitting factor in the ErSiO-SC waveguide are discussed. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Scientific journal, English

Investigation of Solid Phase Growth Conditions of ErSiO Crystalline Compound Prepared by Sol-Gel Method
M.Ohe, H.Isshiki; T.Kimura
4th International Conference on Group IV,WP15, September 19-21, 2007, Radison Miyako Hotel, Tokyo, Japan, *, WP15, 2007, Peer-reviwed
International conference proceedings, English

Growth Rage Limiting by Er(TMOD)2 Supply in MOMBE Growth of ErSiO Crystalline,
H.Choi; K.Tateishi; Y.Nakayama; H.Isshiki; T.Kimura
4th International Conference on Group IV, WP14, .September 19-21, 2007, Radison Miyako Hotel, Tokyo, Japan, *, WP14, 2007, Peer-reviwed
International conference proceedings, English

Study on crystalline properties of Er-Si-O compounds in relation to Er-related 1.54 mu m photoluminescence and electrical properties
Tadamasa Kimura; Katsuaki Masaki; Hideo Isshiki
JOURNAL OF LUMINESCENCE, ELSEVIER SCIENCE BV, 121, 2, 226-229, Dec. 2006, Peer-reviwed, Er-Si-O crystalline compounds, which exhibit superlattice structures and sharp and strong Er-related 1.54 mu m photoluminescence (PL) spectra at room temperature have been formed by self-assembling growth mechanism. Oxidation of the starting materials which have Si and Er at an atomic ratio of 2:1 are prepared and then oxidation and succeeding high-temperature annealing in Ar above 1250 degrees C cause a self-assembled superlattice-structured Er-Si-O crystalline compounds. The control of the ratio of Si and Er, as well as the following oxidation and annealing processes, is found to be sensitive to the crystalline properties, PL spectra and electrical properties. In this study, Eri crystalline thin films are formed on Si substrates by sol-get and MOMBE methods, and their crystalline properties such as crystalline orientation and concentration ratio of Er, Si and 0 are investigated. Crystalline Er-Si-O films of high orientation are successfully grown on Si(1 0 0) and its inclined surface. The PL and excitation spectra, fluorescence decay and the electrical properties are found to be strongly related to the crystalline properties. Excess 0 causes a broader 1.54 mu m PL spectra, slower fluorescence decay, lower carrier-mediated excitation and higher resistivity. A precise control of 0 is found to be necessary to grow superlattice-structu red Eri compounds, which are semiconducting and are excitable via carrier-mediated excitation mechanism. (c) 2006 Elsevier B.V. All rights reserved.
Scientific journal, English

The effect of annealing conditions on the crystallization of Er-Si-O formed by solid phase reaction
K Masaki; H Isshiki; T Kawaguchi; T Kimura
OPTICAL MATERIALS, ELSEVIER SCIENCE BV, 28, 6-7, 831-835, May 2006, Peer-reviwed, Er-Si-O crystal is one of the promising materials for Si-based opto-electronic devices. Crystallization of Er-Si-O is obtained by solid phase reaction of an amorphous preform which contains Er-O and Si-O bonds. However detailed crystallization mechanism is not clear. This study reports that the control of oxygen content of the sample in the annealing process for crystallization affects the fine arrangements of Er-Si-O crystals, resulting in three different types of XRD patterns and correspondingly different PL spectrum fine structures.
The sol-gel method was used to prepare the amorphous preform. The samples were then annealed at 1250 degrees C in Ar for the solid phase growth of Er-Si-O crystals. The obtained Er-Si-O crystals showed, however, some different types of XRD patterns and the PL spectra. It was speculated that a slight amount of residual oxygen in the annealing furnace affected the Er-Si-O crystal structure. To study the effect of oxygen, during solid phase growth three processes were applied; putting a Si cap on the sample to reduce the influence of the atmosphere, additionally putting a carbon sheet as oxygen getter on the sample covered with a Si cap and no Si capping. Three kinds of XRD patterns, PL spectrum fine structures, PLE spectra and PL time decays were observed, depending on the three processes. These results indicate that the fine arrangements of Er-Si-O crystals are affected by oxygen content in the crystal which is very sensitive to oxygen in the annealing Ar atmosphere during the solid phase growth and their properties are come from their particular crystalline structures. (c) 2005 Elsevier B.V. All rights reserved.
Scientific journal, English

Towards epitaxial growth of ErSiO nanostructured crystalline films on Si substrates
H Isshiki; K Masaki; K Ueda; K Tateishi; T Kimura
OPTICAL MATERIALS, ELSEVIER SCIENCE BV, 28, 6-7, 855-858, May 2006, Peer-reviwed, ErSiO nanostructured crystalline films were obtained by the self-organization process at above 1200 degrees C so far. We are studying on the epitaxial growth of ErSio nanostructured crystalline films on Si substrates with views to reducing the process temperature and controlling the superstructures with layer by layer. In this paper, metal organic molecular beam epitaxy (MOMBE) growth of ErSiO nanostructured crystalline films on 15 degrees off Si(1 0 0) substrates at 900 degrees C are demonstrated. Tetra ethoxy silane (TEOS) and 2,2,6,6-tetra methyl-3,5octane dionat erbium (Er(TMOD)(3)) were used as Si-O and Er-O precursors, respectively. The X-ray diffraction result indicates the crystallization under lower temperature than the self-organization. The PL fine structure of Er-related emissions originated from the crystalline nature was observed in the as-grown ErSiO nanostructured crystalline films at room temperature. Also we discuss the possibility of hetero epitaxial growth of ErSiO nanostructured crystalline films on off-oriented Si(1 0 0) substrates from the results. (c) 2005 Elsevier B.V. All rights reserved.
Scientific journal, English

Semiconducting nature of ErSiO crystalline compounds with superlattice structure”,
H. Isshiki; K. Masaki; T. Kawaguchi; T. Kimura
2nd International conference of Group IV Photonics, Sept. 21- 23, 2005, Antwerp, Belgium., *, *, Sep. 2005, Peer-reviwed
International conference proceedings, English

“Optical and structural characterizations of ErSiO crystalline films prepared by”,
H. Isshiki; K. Masaki; K. Tateishi; T. Kawaguchi; T. Kimura
MRS Spring Meeting 2005, March 28-April 1, 2005, San Francisco, USA., *, *, Apr. 2005
International conference proceedings, English

Erbium-silicon-oxide nano-crystallite waveguide formation based on nano-porous silicon
T Kimura; K Ueda; R Saito; K Masaki; H Isshiki
OPTICAL MATERIALS, ELSEVIER SCIENCE BV, 27, 5, 880-883, Feb. 2005, Peer-reviwed, A new method is shown of the formation of a waveguide structure composed of erbium-silicon-oxide (Er-Si-O) nanocrystallites based on nano-porous silicon. A porous silicon (PS) double layered (core and clad) waveguide structure with a cross-section of semicircular shape was first formed by spatially selective anodic etching of an n-Si wafer in the dark. The core and clad PS layers consist is of different nanometer pore sizes. Next, Er ions were incorporated into pores by immersing the PS layers in an erbium-chloride/ethanol solution for 24h. After drying, a two-step annealing was carried out to convert the Er-incorporated PS layers into Er-Si-O crystallites. The resulting samples showed a finely structured photoluminescence spectrum due to the 4f-4f inner shell transition of Er3+ ions at room temperature which was characteristic of Er-Si-O crystallites. (c) 2004 Elsevier B.V. All rights reserved.
Scientific journal, English

Erbium-Silicon-Oxide crystalline films prepared by MOMBE
K Masaki; H Isshiki; T Kimura
OPTICAL MATERIALS, ELSEVIER SCIENCE BV, 27, 5, 876-879, Feb. 2005, Peer-reviwed, Er-Si-O crystalline thin film preparation on silicon substrates by using metal organic molecular beam epitaxy (MOMBE) is proposed. Tetra ethoxy silane (TEOS) and tris-2,2,6,6-tetra methyl-3,5-octane dionato erbium (Er(TMOD)(3)) were used as Si-O and Er-O precursors, respectively. The Er-Si-O thin film crystallizes mainly during the post-annealing process and into a novel type of erbium-silicate crystalline compounds, which have not ever been reported. The atomic fraction of Er:Si:O in the prepared thin film is 3:2:8. The Er3+ related PL spectra show a fine structure with a line width of less than 1 meV at 20 K and 4 meV at room temperature. The narrow line width is due to the crystalline nature. In addition, the PL spectrum fine structure observed in these Er-Si-O films has reproduced the fine structure observed in Er-Si-O crystallites prepared by the wet-chemical method reported by Isshiki et al. The present results have proved that the method proposed in this paper is effective to form Er-Si-O crystalline films. (c) 2004 Elsevier B.V. All rights reserved.
Scientific journal, English

“The effect of annealing conditions on the crystallization of Er–Si–O formed by solid phase reaction ”,
K. Masaki; T. Kawaguchi; H. Isshiki; T. Kimura
E-MRS Spring meeting 2005, May 31 – June 3, 2005, Strasbourg, France, *, *, 2005
International conference proceedings, English

Self-assembled infrared-luminescent Er-Si-O crystallites on silicon
H Isshiki; MJA de Dood; A Polman; T Kimura
APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 85, 19, 4343-4345, Nov. 2004, Peer-reviwed, Optically active and electrically excitable erbium complexes on silicon are made by wet-chemical synthesis. The single-crystalline Er-Si-O compound is formed by coating a Si(100) substrate with an ErCl3/ethanol solution, followed by rapid thermal oxidation and annealing. Room-temperature Er-related 1.53 mum photoluminescence is observed with a peak linewidth as small as 4 meV. The complexes can be excited directly into the Er intra-4f states, or indirectly, through photocarriers. Er concentrations as high as 14 at. % are achieved, incorporated in a crystalline lattice with a 0.9 nm periodicity. Thermal quenching at room temperature is only a factor 5, and the lifetime at 1.535 mum is 200 mus. (C) 2004 American Institute of Physics.
Scientific journal, English

1.5 μm PL fine structures and their extreme fast decay of crystalline ErSiO compounds",
Hideo Isshiki; Katsuaki Masaki; Keisuke Ueda; Ryo Saito; Tadamasa Kimura
1st International conference of Group IV Photonics, Sep. 29 – Oct 1, 2004, Hong Kong,, *, *, Oct. 2004
International conference proceedings, English

Er-Si-O Nano-Structured New Materials for 1.5μm Band Waveguide,
T. Kimura; K. Masaki; K. Ueda; R. Saito; H. Isshiki
International Workshop on Modern Science and Technology (IWMST), Tokyo, Japan, 31S-01(Sept. 2-3, 2004), *, :, Sep. 2004
International conference proceedings, English

"Erbium-silicon-oxide nano-crystallite waveguide formation based on nano-porous silicon",
T. Kimura; K. Ueda; R. Saito; K. Masaki; H. Isshiki
E-MRS Spring meeting 2004, A1-PII.17, May 31 – June 3, 2004, Strasburg, France, *, *, Jun. 2004
International conference proceedings, English

"Erbium-silicon-oxide crystalline films prepared by MOMBE",
Hideo Isshiki; Katsuaki Masaki; Tadamasa Kimura
E-MRS Spring meeting 2004, A1-III.3, May 31 – June 3, 2004, Strasburg, France, *, *, May 2004
International conference proceedings, English

“Self-organized formation of Er-Si-O superlattice”,
H.Isshiki; A.Polman; T.Kimura
Transactions of the Material Research Society of Japan,, 29, 135-138, 2004, Peer-reviwed
Scientific journal, English

Erbium-Silicon-Oxide Thin Films formed by Sol-Gel Method
K. Masaki; H. Isshiki; Y. Kimura
1st International conference of Group IV Photonics, Sep. 29 – Oct 1, 2004, Hong Kong, *, *, 2004
International conference proceedings, English

Structural and optical properties of Mg(x)Znl(1-x)O thin films formed by sol-gel method
T Murakawa; T Fukudome; T Hayashi; H Isshiki; T Kimura
5TH INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES, PROCEEDINGS, WILEY-V C H VERLAG GMBH, 1, 2564-2568, 2004, MgxZn1-xO thin film alloys were formed on Si substrates by a sol-gel method. The percentage of Mg was controlled by the mol ratio in the starting alcoholate sol solution. The structure of films was studied by X-ray diffraction (XRD). The grain morphology and their spatial compositions were measured by scanning electron microscopy (SEM) together with energy dispersive X-ray spectrometry (EDS) analysis. The films were found to be composed of grains of around several ten nanometers in size and different Mg contents. The photoluminescence (PL) shows a bandedge emission with its peak energy changing from 3.3 eV to 3.6 eV for the Mg content of the starting alcoholate solution from 0% to 20%. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
International conference proceedings, English

Preferential suppression of Auger energy backflow by separation of Er ions from carriers with a thin oxide interlayer in Er-doped porous silicon
T Kimura; H Isshiki; T Ishida; T Shimizu; S Ide; R Saito; S Yugo
JOURNAL OF LUMINESCENCE, ELSEVIER SCIENCE BV, 102, 102-103, 156-161, May 2003, Strong enhancement of the Er-related 1.54 mum emission was obtained at room temperature from Er-doped porous silicon (PSi), when host PSi was slightly preoxidized at 900degreesC before Er incorporation. It was speculated that the formation of the oxide interlayer played an important role. Separate measurements of the energy transfer and the Auger deexcitation between carriers in Si crystallites and Er ions were carried out using a two-beam (cw and pulse) excitation method for various preoxidation time which was supposed to change the oxide interlayer thicknesses from about 1 to 10 nm. It was found that a very thin SiO2 interlayer between Si crystallites and Er. ions suppressed preferentially the Auger deexcitation to the carrier-mediated Er excitation. A thin SiO2 interlayer was also effective to suppress the phonon-assisted energy backtransfer at high temperatures (so-called temperature quenching). This preferential suppression of the energy backflow (both Auger deexcitation and temperature quenching) by a thin oxide interlayer led to a strong room temperature. Er-related emission at 1.54 mum in Er-doped porous silicon. The Er/SiO2/Si structure was also formed on a flat Si surface and quite the same result was obtained. The oxide interlayer thickness of similar to2 nm was found optimum to suppress the energy backflow sufficiently with only a slight decrease in the carrier-mediated excitation of Er ions. (C) 2002 Elsevier Science B.V. All rights reserved.
Scientific journal, English

Fine structure in the Er-related emission spectrum from Er-Si-O matrices at room temperature under carrier mediated excitation
H Isshiki; A Polman; T Kimura
JOURNAL OF LUMINESCENCE, ELSEVIER SCIENCE BV, 102, 819-824, May 2003, Peer-reviwed, Er-Si-O crystalline matrices (ESO) have been synthesized by coating the Si surface with an ErCl/ethanol solution, followed by a two-step annealing process, first in oxygen and second in argon. Fine structures of the Er3+-related photoluminescence (PL) spectrum (line width less than 4 meV) have been observed at room temperature. The PL fine structures indicate Stark splitting of the 4f-electron energy levels in erbium ions. The PL excitation spectrum at room temperature shows the carrier-mediated excitation of Er ions. These results suggest that ESO are of a stable and homogeneous structure in semiconducting silicon matrix and are optically very active. The local environment of erbium ions is discussed from the Stark splitting. (C) 2002 Elsevier Science B.V. All rights reserved.
Scientific journal, English

Optical characterization of Er-implanted ZnO films formed by sol-gel method
T Fukudome; A Kaminaka; H Isshiki; R Saito; S Yugo; T Kimura
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ELSEVIER SCIENCE BV, 206, 287-290, May 2003, Peer-reviwed, In this paper, we report on the 1.54 mum photoluminescence (PL) of Er-implanted ZnO thin films formed by a sol-gel method on Si substrates. In spite of the polycrystalline structure of the sol-gel ZnO thin films, they showed strong PL emissions due to the near band edge recombination at 375 nm as well as the Er-related luminescence at 1.54 mum. The Er-related luminescence showed no decrease (quench) in the intensity up to the Er concentration of 1.5 x 10(21) cm(-3). The PL intensity of Er-implanted ZnO at 1.54 mum was found to be as strong as Er-doped PS (porous Si) at 20 K, and the intensity reduced to 1/3 at room temperature. (C) 2003 Elsevier Science B.V. All rights reserved.
Scientific journal, English

{Electrically excitable erbium-silicon-oxide nano-complexes by wet-chemical synthesis
H. Isshiki; M.J.A. de Dood; T.Kimura an; A. Polman
2003 MRS Spring Meeting},{April 21-24, 2003},{San Francisco, CA, USA}(invited), Apr. 2003
International conference proceedings, English

Formation and rare earth doping of ZnO films by sol-gel method
T.Kimura; T. Fukudome; A. Kaminaka; T. Murakawa; H. Isshiki
APWS(Asian-Pacific Workshop on Widegap Semiconductors) 2003},{9-12 March},{Awaji Yumebutai}\\, Mar. 2003
International conference proceedings, English

Suppression of Auger deexcitation and temperature quenching of the Er-related 1.54 mu m emission with an ultrathin oxide interlayer in an Er/SiO2/Si structure
T Kimura; H Isshiki; S Ide; T Shimizu; T Ishida; R Saito
JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 93, 5, 2595-2601, Mar. 2003, Peer-reviwed, A strong enhancement of the Er3+-related 1.54 mum emission. was obtained from Er-doped porous silicon (PSi), when host PSi was slightly oxidized before Er incorporation. Separate measurements of the energy transfer and the Auger. deexcitation between carriers in Si crystallites of preoxidized PSi and Er3+ ions were measured as functions of the preoxidized time or the thickness of the SiO2 interlayer, and revealed that a 1 nm order thick SiO2 interlayer between Si crystallites and Er3+ ions suppressed the Auger energy backflow strongly with only a moderate decrease of the carrier mediated Er3+ excitation. A thin SiO2 interlayer was also effective at suppressing the phonon-assisted energy backtransfer at high temperatures, leading to a strong room temperature Er3+-related 1.54 mum emission. (C) 2003 American Institute of Physics.
Scientific journal, English

Raman scattering study on atomic-layer inter-mixing in (GaAs)\SB{n}(GaP)\SB{1}short period superlattices
H.Iizuka; H.Isshiki; R.Saito; S.Yugo; T.Kimura
2003
Scientific journal, English

Inhomogeneous optical absorption around the K point in graphite and carbon nanotubes
A. Grueneis; R. Saito; Ge. G. Samsonidze; T.Kimura; M. A. Pimenta; A. Jorio; A. G. Souza Filho; G. Dresselhaus; M. S. Dresselhaus
Phys. Rev., B67, 165402-165408, 2003, Peer-reviwed
Scientific journal, English

Ge dot formation on Si by MOVPE using tetramethylgermanium (Ge(CH3)(4))
M Ohtake; M Wada; M Sugiyama; H Isshiki; R Saito; S Yugo; T Kimura
2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS, WILEY-VCH, INC, 0, 1113-1116, 2003, Ge dot formation on Si(100) in metal organic vapor phase epitaxy (MOVPE) using tetramethylgermanium (TMGe) as the Ge source is demonstrated. The dots were formed in the growth temperature range between 600 and 700 degreesC. Atomic force microscopy measurement indicates that Ge dots grow in the Stranski-Krastanov mode. By comparison of the aspect ratio of the dots to those obtained by other growth methods, it is shown that the Ge dot formation mechanism and the resulting dot shape depend on the atmosphere during the dot formation.
International conference proceedings, English

最新VLSI の故障物理
木村 忠正
第 12回 RCJ 信頼性シンポジウム信頼性向上技術セミナ"(企画, 依頼講演)},{2002.11, 日本電子部 品信頼性センター},{ 太田区, 東京}, Nov. 2002
Japanese

Ge Dot Formation on Si by MOVPE using Tetra-methyl Germanium (Ge(CH3)4
M.Ohtake; M.Wada; M.Sugiyama; H.Isshiki; R.Saito; S.Yugo; T.Kimura
2nd International Conference on Semiconductor Quantum Dots -QD2002-},{9.30 - 10. 3, 2002},{Komaba Campus, University of Tokyo, Japan}, Oct. 2002
International conference proceedings, English

Room Temperature Photoluminescence and Absorption Fine Structures of Self- Assembled Er-O Octahedral Dots in Quantized Si Matrix
H.Isshiki; A. Polman; T.Kimura
2nd International Conference on Semiconductor Quantum Dots -QD2002-},{September 30 - October 3, 2002},{University of Tokyo, Japan }, Oct. 2002
International conference proceedings, English

Room Temperature Formation of Thick SiO2 Layers by Anodic Oxidation of Porous Silicon
Fan Xinyu; Hideo Isshiki; Riichiro Saito; T.Kimura; Satoshi Yamamoto; Cui Rongqiang
{Extended Abstracts of the 2002 International Conference on Solid Sttate Devices and Materials, {2002.9.17-19},{Nagoya}, 460-461, Sep. 2002
International conference proceedings, English

OPTICAL CHARACTERIZATION OF Er IMPLANTED ZnO FILMS FORMED BY SOL-GEL METHOD
T. Fukudome; A. Kaminaka; H. Isshiki; R. Saito; S. Yugo; T.Kimura
International Conference on Ion Beam Modification of Materials 2002},{2002.9.1-6},{Kobe, Japan}, Sep. 2002
International conference proceedings, English

Preferential suppression of Auger energy backflow by separation of Er ions from carriers with a thin oxide interlayer in Er-doped porous silicon
T.Kimura; H. Isshiki; T. Ishida; T. Shimizu; S. Ide; R. Saito; S. Yugo
International Conference of Luminescence and Related Materials {2002.8.24-29},{Budapest, Hungary}, Aug. 2002
International conference proceedings, English

FINE STRUCTURE IN THE Er-RELATED EMISSION SPECTRA FROM Er-Si-O COMPLEXES AT ROOM TEMPERATURE UNDER CARRIER MEDIATED EXCITATION
Hideo Isshiki; Albert Polman; T.Kimura
International Conference on Luminescence and Related Materials},{2002.8.24-29},{Budapest, Hungary}, Aug. 2002
International conference proceedings, English

Optical emission spectroscopic studies on the positive bias effects in plasma-assisted chemical vapor deposition of diamond
H. Isshiki; M. Nojiri; N. Ishigaki, \tk; S. Yugo
8th International Conference on New Diamond Science and Technology 2002{July 21-26, 2002},{The University of Melbourne, Australia}, Jul. 2002
International conference proceedings, English

Optical emission spectroscopic studies on the positive bias effects in plasma-assisted chemical vapor deposition of diamond
H. Isshiki; M. Nojiri; N. Ishigaki, \tk; S. Yugo
*, *, Jul. 2002
International conference proceedings, English

Determination of two-dimensional phonon dispersion relation of graphite by Raman spectroscopy
A Gruneis; R Saito; T Kimura; LG Cancado; MA Pimenta; A Jorio; AG Souza; G Dresselhaus; MS Dresselhaus
PHYSICAL REVIEW B, AMER PHYSICAL SOC, 65, 15, Apr. 2002, Phonon dispersion relations of a two-dimensional (2D) graphite are obtained by fitting dispersive Raman modes that originate from nonzone center phonons near the Gamma or K point in the Brillouin zone (BZ). A new set of 12 force constants of 2D graphite up to the fourth neighbor are determined by a self-consistent fitting procedure, combined with double-resonance Raman theory. Analytical expressions for eigenvalues and eigenvectors at high symmetry points of the BZ are presented.
Scientific journal, English

XPS study of initial stage of the diamond nucleations
N.Ishigaki; T.Kimura; S.Yugo
ISAM2002,AdvancedMaterials 2002, {2002.3},{Tsukuba, Japan}, p127-128, Mar. 2002
International conference proceedings, English

XPS study of initial stage of the diamond nucleations
N.Ishigaki; T.Kimura; S.Yugo
p127-128, Mar. 2002
International conference proceedings, English

Electrical properties of B-doped diamond films grown by bias method
D.Saito; T.Tashiro; T.Kimura; S.Yugo
ISAM2002, Advanced Materials 2002 {2002.3},{Tsukuba, Japan}, p129-200, Mar. 2002
International conference proceedings, English

Electrical properties of B-doped diamond films grown by bias method
D.Saito; T.Tashiro; T.Kimura; S.Yugo
*, p129-200, Mar. 2002
International conference proceedings, English

A new method of formation of impurity-doped diamond films by bias method
D. Saito; E. Tsutsumi; N. Ishigaki; T. Tashiro; T.Kimura; S. Yugo
Diamond and Related Materials 11 {pp.1804-1807} {2002}, 11, 1804-1807, 2002
Scientific journal, English

Self-organized Er-Si-O Superlattice as a Nano-Optoelectronic Material
Hideo Isshiki; Albert Polman; T.Kimura
Science, 2002
Scientific journal, English

Room Temperature Formation of Thick SiO2 Layers by Anodic Oxidation of Porous Silicon
Fan Xinyu; Hideo Isshiki; Riichiro Saito; TK; Satoshi Yamamoto; Cui Rongqiang
JJAP, 2002
Scientific journal, English

Determination of two dimensional phonon dispersion relation of graphite by Raman spectroscopy 155405-155411},{2002}
A. Gruneis; R. Saito; T.Kimura; L. G. Canccado; M. A. Pimenta; A. Jorio; A. G. Souza Filho; G. Dresselhaus; M. S. Dresselhaus
Phys. Rev. B 65, B65, 2002
Scientific journal, English

Er-O complexes doped in silicon photonic crystals by wet-chemical method and the indirect excitation emissions
H. Isshiki; M.J.A. de Dood; A. Polman; T. Kimura
*, *, Nov. 2001
International conference proceedings, English

Study of the radiative and nonradiative processes of rare earth implanted semiconductors at low temperatures
T. Kimura; H. Toda; T. Ishida; H. Isshiki; R. Saito
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 175-177, 286-291, Apr. 2001, Factors determining the low temperature fluorescent transition rate of the luminescence of rare earth implanted semiconductors are studied. Photocarrier induced Auger deexcitation is used to separate the radiative transition rate. The rate is from the fluorescent one for Er-, Er and Ne-, Er and O-implanted Si and Ho-implanted GaAs.
International conference proceedings, English

偏光ラマン散乱による原子層超格子構造の無秩序化の評価
飯塚 博; 一色秀夫; 齋藤理一郎; 木村忠正
第48回応用物理学関係連合講演会，明治大学, Mar. 2001
Japanese

ゾルーゲル法により作製した希土類添加ZnOの可視域発光
上中敦史; 佐藤隆史; 石田 猛; 一色秀夫; 齋藤理一郎; 湯郷成美; 木村忠正
第48回応用物理学関係連合講演会，明治大学, Mar. 2001
Japanese

平成12年度故障物理研究委員会成果報告書「薄層ゲート酸化膜の信頼性を中心として」
木村忠正他共著
日本電子部品信頼性センター, Mar. 2001
Japanese

新しい方法で作製したボロンドープダイヤモンド薄膜の電気的性質
斎藤大輔; 石垣哲孝; 木村忠正; 湯郷成美
第48回応用物理学関連講演会，講演予稿集，明大, 579, Mar. 2001
Japanese

バイアス下におけるダイヤモンド核発生の初期過程の考察
石垣哲孝; 斎藤大輔; 田代智弘; 木村忠正; 湯郷成美
第48回応用物理学関連講演会，講演予稿集，明大, 579, Mar. 2001
Japanese

"Study of the radiative and nonradiative processes of rare earth implanted semiconductors at low temperatures"
T.Kimura; H.Toda; T.Ishida; H.Isshiki; R.Saito
Nucl. Instr. Meth. B, 175-177, 286-291, 2001
English

Theoretical Analysis of the diffusive ion in biased plasma enhanced diamond chemical vapor deposition
R. Saito; J. Sano; N. Ishigaki; T. Kimura; S. Yugo
J. Appl. Phys, 90, 2559-2564, 2001
English

Anomalous Potential Barrier of Double-Wall Carbon Nanotube
R. Saito; R. Matsuo; T. Kimura; G. Dresselhaus; M. S. Dresselhaus
Chem. Phys. Lett. 348, 348, pp.187-193, 2001
Scientific journal, English

Study of the radiative and nonradiative processes of rare earth implanted semiconductors at low temperatures
T. Kimura; H. Toda; T. Ishida; H. Isshiki; R. Saito
Nucl. Instr. Meth. B, 175-177, 286-291, 2001, Peer-reviwed
Scientific journal, English

極薄酸化膜のTDDB信頼性の概要
木村忠正
RCJ 信頼性シンポジウム信頼性セミナー（大田区，東京）, Nov. 2000
Japanese

Ion energy effects on diamond heteroepitaxial growth
S. Yugo; N. Isshigaki; J. Sano; K. Hirahara; T. Kimura
11th European Conference on Diamond, Diamond-Like Maaterials, Carbon Nanotubes, Nitrides & Silicon Carbide, Porto, Portugal, 3-8, Sep. 2000
English

ゾルーゲル法により作製したEr添加ZnOにおけるEr^3+^の発光
石田 猛; 上中敦史; 一色秀夫; 齋藤理一郎; 湯郷成美; 木村忠正
第61回応用物理学会学術講演会, 北海道工業大学, Sep. 2000
Japanese

多孔質Si膜中に形成したEr/SiO_2_/Si構造からの1.54μmPL発光
一色秀夫; 清水隆範; 井手佐和; 木村忠正
第61回応用物理学会学術講演会, 北海道工業大学, Sep. 2000
Japanese

２層カーボンナノチューブの安定構造
齋藤理一郎; 松尾竜馬; 木村忠正; G. Dresselhaus; M. S. Dresselhaus
日本物理学会第55回年次大会，新潟大学五十嵐キャンパス, Sep. 2000
Japanese

Direct evaluation of atomic layer intermixing via disordering in ALE grown (GaAs)(m)(GaP)(1) system
H Isshiki; M Takahashi; N Yamane; H Iizuka; Y Aoyagi; T Sugano; T Kimura
APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, 159, 508-513, Jun. 2000, Atomic layer intermixing at pseudomorphic interfaces has been evaluated directly by changing of electronic states due to disordering in (GaAs)(m)(GaP)(1) (m = 2, 3, 4) superlattice grown by atomic layer epitaxy (ALE). The results show the critical change of the electronic structures due to atomic layer intermixing at GaAs/GaP hetero interface. The interdiffusion coefficients are about two orders of magnitude higher than values of the self-diffusion. It is suggested that microscopic and inhomogeneous strain effects are closely related to the exchange of neighboring atoms at the interface. (C) 2000 Elsevier Science B.V. All rights reserved.
Scientific journal, English

平成11年度調査・試験研究成果報告概要
木村忠正
故障物理研究委員会，RCJ会報, 27, 1, 4-6, May 2000
Japanese

Site of the Er3+ optical centers of the 1.54 mu m room-temperature emission in Er-doped porous silicon and the excitation mechanism
W Wang; H Isshiki; S Yugo; R Saito; T Kimura
JOURNAL OF LUMINESCENCE, ELSEVIER SCIENCE BV, 87-9, 319-322, May 2000, Sites of the Er3+ luminescent centers in Er-doped porous silicon (PS:Er) formed by immersion are studied in order to make clear the cause of the strong room temperature luminescence at 1.54 mu m due to the 4f intra-transition of Er3+ ions. The luminescence spectra and the temperature quenching of the intensity and the fluorescence lifetime are compared between PS:Er samples formed by immersion in an ErCl3/alcohol solution and Er-implanted PS, using the same PS hosts. PS:Er samples formed by immersion show a small temperature quenching in the intensity and the fluorescence lifetime, resulting in a strong luminescence at RT. On the other hand, PS:Er samples formed by Er ion implantation into PS shows almost the same strong temperature quenching as the Er-implanted crystalline Si. These results indicate that the sites of Er ions responsible for the strong RT 1.54 mu m luminescence in PS:Er formed by immersion is not inside Si nanocrystals but on the surface of Si nanocrystals. (C) 2000 Elsevier Science B.V. All rights reserved.
Scientific journal, English

Si添加したEr^3+^イオンの励起過程における中間準位の解明―電界パルスによる中間準位の電子正孔対解離効果―
武田健太郎; 上中敦史; 一色秀夫; 湯郷成美; 齋藤理一郎; 木村忠正
春季第47回応用物理学関係連合講演会，青山学院大学, Mar. 2000
Japanese

酸素共添加ErドープSi発光の光励起キャリアによるオージェクエンチング
戸田博之; 一色秀夫; 湯郷成美; 齋藤理一郎; 木村忠正
春季第47回応用物理学関係連合講演会，青山学院大学, Mar. 2000
Japanese

ErドープポーラスシリコンのPL発光における酸素プレアニール効果
井手佐和; 一色秀夫; 湯郷成美; 齋藤理一郎; 木村忠正
春季第47回応用物理学関係連合講演会，青山学院大学, Mar. 2000
Japanese

Erドープ多孔質Siの発光特性に対する表面Si保護効果
清水隆範; 石山卓茂; 一色秀夫; 湯郷成美; 齋藤理一郎; 木村忠正
春季第47回応用物理学関係連合講演会，青山学院大学, Mar. 2000
Japanese

平成11年度故障物理研究委員会成果報告書「薄層ゲート酸化膜の信頼性を中心として」
木村忠正他
日本電子部品信頼性センター, Mar. 2000
Japanese

低バイアス印加におけるダイヤモンドの核発生
石垣哲孝; 斎藤大輔; 堤 栄作; 木村忠正; 湯郷成美
第47回応用物理学関連連合講演会，東京，講演予稿集２, 552, Mar. 2000
Japanese

"Quasi-Coherency of Electronic States in Ga (As,P) Fractal Structured Lattice"
H.Isshiki; T.Kimura; Y.Aoyagi; T.Sugano
The Third SANKEN International Symposium "Advanced Nanoelectronics: Devices, Materials, and Computing", March 14-15, 2000, SANKEN, Osaka University, Osaka, Japan, Mar. 2000
English

Auger de-excitation of the 1.54 mu m emission of Er- and O-implanted silicon
T Nakanose; T Kimura; H Isshiki; S Yugo; R Saito
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ELSEVIER SCIENCE BV, 161, 1080-1084, Mar. 2000, This paper describes the Anger de-excitation of the Er3+-related 1.54 mu m luminescence of Er and O coimplanted silicon. Time response of the Er-related 1.54 mu m emission to 0.3 ns wide light pulses of the 337 nm N-2 laser line is measured under CW illumination of the Ar ion laser 488 nm line. O coimplantation is found to produce new Si:Er-O luminescence centers which illuminate at the same wavelength as Si:Er. but with a much shorter fluorescence lifetime. The time response of the Si:Er-O luminescence is found to be very sensitive to the Ar 488 nm CW illumination. Both the intensity and the fluorescence lifetime decrease rapidly with increase of the CW light intensity. The Auger coefficient of Er-O centers obtained is about ten times larger with respect to Si:Er. (C) 2000 Elsevier Science B.V. All rights reserved.
Scientific journal, English

Site of the Er3+ optical centers of the 1.54 μm room-temperature emission in Er-doped porous silicon and the excitation mechanism
Wei Wang; Hideo Isshiki; Shigemi Yugo; Riichiro Saito; Tadamasa Kimura
Journal of Luminescence, Elsevier Science Publishers B.V., 87, 319-322, 2000, Sites of the Er3+ luminescent centers in Er-doped porous silicon (PS:Er) formed by immersion are studied in order to make clear the cause of the strong room temperature luminescence at 1.54 μm due to the 4f intra-transition of Er3+ ions. The luminescence spectra and the temperature quenching of the intensity and the fluorescence lifetime are compared between PS:Er samples formed by immersion in an ErCl3/alcohol solution and Er-implanted PS, using the same PS hosts. PS:Er samples formed by immersion show a small temperature quenching in the intensity and the fluorescence lifetime, resulting in a strong luminescence at RT. On the other hand, PS:Er samples formed by Er ion implantation into PS shows almost the same strong temperature quenching as the Er-implanted crystalline Si. These results indicate that the sites of Er ions responsible for the strong RT 1.54 μm luminescence in PS:Er formed by immersion is not inside Si nanocrystals but on the surface of Si nanocrystals.
Scientific journal, English

Auger de-excitation of the 1.54 μm emission of Er- and O-implanted silicon
T. Nakanose; T. Kimura; H. Isshiki; S. Yugo; R. Saito
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Elsevier Science Publishers B.V., 161, 1080-1084, 2000, This paper describes the Auger de-excitation of the Er3+-related 1.54 μm luminescence of Er and O coimplanted silicon. Time response of the Er-related 1.54 μm emission to 0.3 ns wide light pulses of the 337 nm N2 laser line is measured under CW illumination of the Ar ion laser 488 nm line. O coimplantation is found to produce new Si:Er-O luminescence centers which illuminate at the same wavelength as Si:Er, but with a much shorter fluorescence lifetime. The time response of the Si:Er-O luminescence is found to be very sensitive to the Ar 488 nm CW illumination. Both the intensity and the fluorescence lifetime decrease rapidly with increase of the CW light intensity. The Auger coefficient of Er-O centers obtained is about ten times larger with respect to Si:Er.
Scientific journal, English

Stable Structure of Multi Wall Carbon Nanotubes
R. Matsuo; R. Saito; T. Kimura
第 18 回 フラーレン研究会, 岡崎国立共同研究機構 岡崎コンファレンスセンター, Jan. 2000
English

Conductivity of Chiral Carbon Nanotubes
E. Middleton; R. Saito; T. Kimura
第 18 回 フラーレン研究会,岡崎国立共同研究機構 岡崎コンファレンスセンター, Jan. 2000
English

Conduction subband formation in (GaAs)_m_(GaP)_n_ fractal structures atomic-layer-superlattice grown by atmic layer epitaxy
H. Isshiki; K. Tanaya; T. Kimura; J. S. Lee; Y. Aoyagi; T. Suganoj
24th International Conference on the Physics of Semiconductors（World Scientific Publishing, CO-ROM）, 0948, 2000
English

Chemical reaction of intercalated atoms at the edge of nano-graphene cluster
R Saito; M Yagi; T Kimura; G Dresselhaus; MS Dresselhaus
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, GORDON BREACH SCI PUBL LTD, 340, 71-76, 2000, The chemical reactions of halogen molecules on a nano-graphite cluster are calculated using a semi-empirical calculational method. A real time calculation of the chemical reaction of halogen molecules up to 200 fs which is performed by the dynamic reaction coordinates (DRC) method of the quantum chemistry library shows that the iodine molecule exhibits a special reaction involving the removal of hydrogen atoms from edge carbon atoms. This result might be relevant to recent experiments on the graphitization of pitch at a low temperature of 400 degrees C. We discuss the deformation of the nano-graphite cluster upon the intercalation of halogen atoms.
Scientific journal, English

信頼性セミナ
木村忠正他
1999年第９回RCJ信頼性シンポジウム, 大田区産業プラザ，東京, Nov. 1999
Japanese

ダイヤモンド核発生におけるバイアス印加時のプラズマ構造
佐野潤一; 天野洋一; 木村忠正; 湯郷成美
第13回ダイヤモンドシンポジュウム，早稲田，講演要旨集, 78-79, Nov. 1999
Japanese

ダイヤモンドヘテロエピタキシャル成長におけるバイアス効果
斎藤大輔; 石垣哲孝; 吉田宗生; 木村忠正; 湯郷成美
第13回ダイヤモンドシンポジュウム，早稲田，講演要旨集, 56-57, Nov. 1999
Japanese

希土類ドープ半導体発光の光励起キャリアによるオージェクエンチング
戸田博之; J. F. Suyver; P. G. Kik; A. Polman; 一色秀夫; 湯郷成美; 齋藤理一郎; 木村忠正
秋季第60回応用物理学会学術講演会，甲南大学, Sep. 1999
Japanese

Er ドープポーラスシリコンのPL発光における酸素プレアニール効果
井手佐和; 戸田博之; 武田健太郎; 一色秀夫; 湯郷成美; 齋藤理一郎; 木村忠正
秋季第60回応用物理学会学術講演会，甲南大学, Sep. 1999
Japanese

ダイヤモンド核発生のシミュレーションによる考察
平原勝久; 石垣哲孝; 齋藤理一郎; 木村忠正; 湯郷成美
秋季第60回応用物理学会学術講演会，甲南大学, Sep. 1999
Japanese

バイアス法によるSi基板表面形状に依存するダイヤモンドエピタキシャル成長
石垣哲孝; 佐野周一; 齋藤理一郎; 平原勝久; 木村忠正; 湯郷成美
秋季第60回応用物理学会学術講演会，甲南大学, Sep. 1999
Japanese

書き込み可能なゲート素子を用いた行列専用計算機の開発
沼 知典; 松尾竜馬; 山岡寛明; 齋藤理一郎; 木村忠正
日本物理学会1999年秋の分科会，岩手大学, Sep. 1999
Japanese

Effects of bias voltage on microwave plasma used for diamond growth
S Yugo; N Ishigaki; K Hirahara; J Sano; T Sone; T Kimura
DIAMOND AND RELATED MATERIALS, ELSEVIER SCIENCE SA, 8, 8-9, 1406-1409, Aug. 1999, A tungsten-needle substrate was perpendicularly set onto a substrate holder. Diamond films were grown on the substrate by varying the length of the needle inserted into plasma. The results demonstrated that when the bias voltage was -50 V and the methane concentration was 5%, a diamond thin film grew for a needle length of 0.5 mm, and granular diamond grew for a needle length of 1 mm. Plasma potentials were measured while the bias voltage was varied. The plasma potential became negative at bias voltage of 0 V, and it changed to positive as the negative bias voltage increased. These results revealed that diamonds were grown near the boundary between the transition region surrounding the plasma ball and the ion sheath. In addition, the results also indicated that the bias voltage can control the density and energy of ions, electrons and radicals near the plasma, and therefore plays a role in providing optimal conditions for diamond growth. (C) 1999 Elsevier Science S.A. All rights reserved.
Scientific journal, English

Electronic structure of fluorine doped graphite nanoclusters
R Saito; M Yagi; T Kimura; G Dresselhaus; MS Dresselhaus
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, PERGAMON-ELSEVIER SCIENCE LTD, 60, 6, 715-721, Jun. 1999, The electronic structure of fluorine-doped graphite nanoclusters is calculated by a semi-empirical quantum calculation. We find a local deformation of the graphite nanocluster upon fluorine doping resulting from st change in the electronic structure of the host carbon atoms from sp(2) to sp(3) hybridization. By adding fluorine atoms one by one, we found that the fluorine atoms first terminate at edge sites of the nanographite cluster, and then interior carbon atoms become doped by the added fluorine atoms by breaking the pi bonds between a carbon atom and its neighboring carbon atoms. We also discuss the occurrence of unpaired spins in the graphite nanoclusters arising from F doping. (C) 1999 Elsevier Science Ltd. All rights reserved.
Scientific journal, English

Chemical Reaction of Intercalated Atoms at the Edge of Nano-Graphene Cluster
R. Saito; M. Yagi; T. Kimura; G. Dresselhaus; M. S. Dresselhaus
The 10th International Symposium of Intercalation Compounds, ISIC10,International Conference Center, Okazaki, Aichi, May 1999
English

-
木村忠正
平成10年度調査・試験研究成果報告書, 故障物理研究委員会(1995.5), 日本電子部品信頼性センター, 26, 1, 5-6, May 1999
Japanese

Erドープシリコンの発光におけるエネルギー伝達機構と酸素添加の効果
木村忠正; 中ノ瀬貴生; 戸田博之; 齋藤理一郎; 一色秀夫
応用物理学会分科会シリコンテクノロジーNo.8光るシリコン-プロセス・素材技術の新展開-特集号, 8, 16-21, Apr. 1999
Japanese

Er ドープシリコンの発光におけるエネルギー伝達機構と酸素添加の効果
木村忠正; 中ノ瀬貴生; 戸田博之; 齋藤理一郎; 一色秀夫
第８回シリコンテクノロジー研究会「光るシリコン―プロセス・素子技術の新展開」,東京農工大学, Apr. 1999
Japanese

Er ドープシリコンの発光におけるエネルギー伝達機構と酸素添加の効果
木村 忠正; 中ノ瀬 貴生; 戸田 博之; 齋藤 理一郎; 一色 秀夫
応用物理学会分科会シリコンテクノロジーNo.8 光るシリコン- プロセス・素子技術の新展開- 特集号, 16-21, Apr. 1999
Japanese

ナノグラファイトの端における電子状態と化学反応
齋藤理一郎; 八木将志; 平原勝久; 木村忠正
日本物理学会第54回年会（広島大，広島）, Mar. 1999
Japanese

Ga（As,P）１次元フラクタル格子における電子状態
一色秀夫; 木村忠正; 青柳克信; 菅野卓雄
第46回効用物理学関係連合講演会，野田, Mar. 1999
Japanese

Si中に熱拡散したErの発光スペクトル
山下 裕; 中ノ瀬貴生; 王 威; 戸田博之; 一色秀夫; 湯郷成美; 齋藤理一郎; 木村忠正
春季第46回応用物理学関係連合講演会（東京理科大学）, Mar. 1999
Japanese

イオン注入法により作製したEr添加Siにおける1.54μm発光の時間応答（３）-CWレーザ照射下における時間応答特性-
山下 裕; 中ノ瀬貴生; 王 威; 戸田博之; 一色秀夫; 湯郷成美; 齋藤理一郎; 木村忠正
春季第46回応用物理学関係連合講演会（東京理科大学）, Mar. 1999
Japanese

ErドープポーラスシリコンのEr発光中心サイト
王 威; 戸田博之; 井手佐和; 中ノ瀬貴生; 一色秀夫; 湯郷成美; 齋藤理一郎; 木村忠正
春季第46回応用物理学関係連合講演会（東京理科大学）, Mar. 1999
Japanese

Hoドープシリコンにおける1.20μm 発光の温度特性
戸田博之; 中ノ瀬貴生; J. F. Suyver; P. G. Kik; A. Polman; 一色秀夫; 湯郷成美; 齋藤理一郎; 木村忠正
春季第46回応用物理学関係連合講演会（東京理科大学）, Mar. 1999
Japanese

最新半導体デバイス・LSI技術の信頼性-主としてフラッシュメモリ技術について
木村忠正
平成10年度故障物理研究委員会成果報告書,日本電子部品信頼性センター, Mar. 1999
Japanese

最新半導体デバイス・LSI 技術の信頼性- 主としてフラッシュメモリ技術について
木村 忠正
平成10年度 故障物理研究委員会 成果報告書 , 日本電子部品信頼性センター, Mar. 1999
Japanese

非秋季系超格子における電子状態のコヒーレント制御
一色秀夫; 木村忠正; 青柳克信; 菅野卓雄
理研シンポジウム"第二回コヒーレント科学"，和光市, Feb. 1999
Japanese

ハロゲン原子とグラファイト微結晶の化学反応
八木将志; 齋藤理一郎; 木村忠正
第16回フラーレン総合シンポジウム（岡崎国立研究機構）, Jan. 1999
Japanese

Optical and electrical doping of silicon with holmium
JF Suyver; PG Kik; T Kimura; A Polman; G Franzo; S Coffa
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ELSEVIER SCIENCE BV, 148, 1-4, 497-501, Jan. 1999, Peer-reviwed, 2 MeV holmium ions were implanted into Czochralski grown Si at a fluence of 5.5 x 10(14) Ho/cm(2). Some samples were co-implanted with oxygen to a concentration of (7+/-1)x10(19) cm(-3). After recrystallization, strong Ho segregation to the surface is observed, which is fully suppressed by co-doping with O. After recrystallization, photoluminescence peaks are observed at 1.197, 1.96 and 2.06 mu m, characteristic for the I-5(6) --> I-5(8) and I-5(7) --> I-5(8) transitions of Ho3+. The Ho3+ luminescence lifetime at 1.197 mu m is 14 ms at 12 K. The luminescence intensity shows temperature quenching with an activation energy of 11 meV, both with and without O co-doping. The observed PL quenching cannot be explained by free carrier Auger quenching, but instead must be due to energy backtransfer or electron hole pair dissociation, Spreading resistance measurements indicate that Ho exhibits donor behavior, and that in the presence of O the free carrier concentration is enhanced by more than two orders of magnitude. In the O co-doped sample 20%, of the Ho3+ was electrically active at room temperature. (C) 1999 Elsevier Science B.V. All rights reserved.
Scientific journal, English

Finite-size effect on the Raman spectra of carbon nanotubes
R Saito; T Takeya; T Kimura; G Dresselhaus; MS Dresselhaus
PHYSICAL REVIEW B, AMER PHYSICAL SOC, 59, 3, 2388-2392, Jan. 1999, Using nonresonant bond polarization theory, we have calculated the Raman intensity of a single-wall carbon nanotube of finite length. The calculations show that the Raman peaks in the intermediate frequency range (500- 1200 cm(-1)) have no intensity for infinite nanotubes, but do have some intensity for finite nanotubes. These intermediate frequency modes, which are sensitive to the nanotube length, correspond to vibrations along the nanotube axis. We also found an edge state of the breathing phonon mode at an open end of the carbon nanotube, which is Raman active. [S0163-1829(99)08603-8].
Scientific journal, English

Energy transfer efficiency of the 1.54 mu m luminescence of Er-implanted silicon in relation to post-implantation annealing and impurity coimplantation
T Kimura; T Nakanose; W Wang; H Isshiki; R Saito
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ELSEVIER SCIENCE BV, 148, 1-4, 486-491, Jan. 1999, CZ-Si (p-type, 0.1-0.2 Omega cm) is implanted with Er ions together with O or Ne ions. The 1.54 mu m photoluminescence (PL) intensity and the decay time are measured as Functions of ambient temperature From 20 to 200 K. The energy transfer efficiency from host Si to Er3+ 4f-electrons is derived from the above results and is found to be temperature dependent. In contrast to the almost temperature independency of the energy transfer efficiency for sufficiently annealed Er-implanted Si. it shows a decreasing tendency above 30-50 K when defects are introduced by Ne ion coimplantation, whereas it shows an increase above similar to 100 It when O ions are coimplanted. (C) 1999 Elsevier Science B.V. Ail rights reserved.
Scientific journal, English

Electronic States in Heavily Li-doped Graphite Nanoclusters
M. Yagi; R. Saito; T. Kimura; G. Dresselhaus; M. S. Dresselhaus
J. Mataer. Res., 14, 3799-3804, 1999
English

半導体・金属材料用語辞典 (高橋 清，新居 和嘉 監修)
木村 忠正
工業調査会, 1999
Japanese

Energy transfer efficiency of the 1.54 $\mu$m luminescence of Er-implanted silicon in relation to post-implantation annealing and impurity coimplantation
T. Kimura; T.Nakanose; W.Wang; H.Isshiki; R.Saito
Nucl.Instr. and Meth. in Phys. Res., B148, pp.486-491, 1999
English

Conduction subband formation in (GaAs)m(GaP)n Fractal structured atomic-layer-superlattice grown by atomic layer epitaxy
H.Isshiki; K.Tanaya; T.Kimura; J.S.Lee; Y.Aoyagi; Y.Sugano
Proc. of ICPS'24, The Physics of Semiconductors, 1999
English

Li and F Doped Graphite Nanoclusters
R. Saito; M. Yagi; A. Tashiro; T. Kimura
Internal Symposium on Carbon, Science and Technology for New Carbon, 1998. 11. 8-12，（Surugadai Memorial Hall, Chuo University, Tokyo）, Nov. 1998
English

高信頼性半導体デバイスの寿命分布と故障メカニズム
木村忠正
REAJ, 20, 7, 489-496, Sep. 1998
Japanese

ドナー，アクセプター型ドープ微小黒船クラスターの電子状態
八木将志; 田代哲正; 齋藤理一郎; 木村忠正
日本物理学会1998年分科会（琉球大学，沖縄）, Sep. 1998
Japanese

イオン注入ErドープポーラスシリコンのEr発光中心サイト
王 威; 戸田博之; 井手佐和; 中ノ瀬貴生; 一色秀夫; 湯郷成美; 齋藤理一郎; 木村忠正
秋季第59回応用物理学会学術講演会（広島大学）, Sep. 1998
Japanese

イオン注入装置により作製したEr添加Siにおける1.54μm発光の時間応答（２）-Erイオンの励起過程に与える酸素共添加の影響-
中ノ瀬貴生; 戸田博之; 一色秀夫; 湯郷成美; 齋藤理一郎; 木村忠正
秋季第59回応用物理学会学術講演会（広島大学）, 17p-R-2, Sep. 1998
Japanese

Hoドープシリコンの光学的および電気的特性
J. F. Suyver; P. G. Kik; A. Polman; G. Franzo; S. Coffa; 戸田博之; 一色秀夫; 齋藤理一郎; 木村忠正
秋季第59回応用物理学会学術講演会（広島大学）, 17p-R-7, Sep. 1998
Japanese

Effect of negative bias microwave plasma used for diamond growth
S. Yugo; T. Ishigaki; K. Hirahara; J. Sano; T. Sone; T. Kimura
ICNDST-6, Abstract, Pretoria, 54, Sep. 1998
English

Effect of bias treatments for heteroepitaxial growth of diamond
S. Yugo; T. Ishigaki; K. Hirahara; J. Sano; T. Kimura
Diamond Films '98, Abstract, Creta, Sep. 1998
English

高信頼性半導体デバイスの寿命分布と故障メカニズム
木村忠正
REAJ, 20, No.7 (通巻 91号, pp.489-496, Sep. 1998
Japanese

Conduction subband formation in GaAsmGaPn Fractal Structured atomic-layer-superlatiice grown by atimic layer epitaxy
H. Isshiki; K. Tanaya; T. Kimura; J. S. Lee; Y Aoyagi; T. Saito
24rd International Conference on the Physicas of Semiconductors, August 2-7, 1998，（Jerusalem, Israel）, Aug. 1998
English

Energy Transfer Efficiency of the 1.54μm Luminescence of Er-Implanted Silicon in Relation to Post-Implantation Annealing and Impurity Coimplantation
T. Kiumura; T. Nakanose; W. Wang; H. Isshiki; R. Saito
IBMM98 Amsterdam, Aug. 1998
English

ドナーアクセプター型微小黒船クラスターの電子状態
齋藤理一郎; 八木将志; 木村忠正
炭素材科学会第11回カーボンアロイ研究会-第６回電池用炭素材料研究会合同研究会（国際きのこ会館，桐生）, Jul. 1998
Japanese

Time resolved study on 1.54μm emisson of Er-implanted Si
T. Nakanose; H. Isshiki; T. Kimura
17th Electronic Materials Symposium, Izu-Nagaoka, Jul. 1998
English

Effects of hydrogen plasma treatment on the 1.54 mu m luminescence of erbium-doped porous silicon
T Dejima; R Saito; S Yugo; H Isshiki; T Kimura
JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 84, 2, 1036-1040, Jul. 1998, Well resolved, sharp photoluminescence (PL) peaks of Er3+ (4f(11)) ions at similar to 1.54 mu m are obtained from Er-doped porous silicon (PS:Er) on which a hydrogen plasma treatment is carried out after electrochemical incorporation of Er3+ ions into porous silicon. The full width at half maximum (FWHM) of the 1.538 mu m main peak at 20 K is less than 1 nm, which is much smaller than that obtained from PS:Er samples annealed in a H-2 or O-2 flow (FWHM 7-10 nm), and is comparable to that of Er-doped crystalline silicon. The thermal quenching of the PL intensity is, however, relatively small, the PL intensity decreasing only by a factor of 10 from 20 to 300 K. (C) 1998 American Institute of Physics. [S0021-8979(98)03114-4].
Scientific journal, English

Analysis of heteroepitaxial mechanism of diamond grown by chemical vapor deposition
S Yugo; N Nakamura; T Kimura
DIAMOND AND RELATED MATERIALS, ELSEVIER SCIENCE SA, 7, 7, 1017-1020, Jul. 1998, In this study, we observed the effects of bias treatment on the hetero-epitaxial growth of diamond on Si substrates using FE-SEM and X-TEM. Then, we investigated the mechanism of the epitaxial growth of diamond, taking into account the nucleus generation model which we reported on previously. In our model, we assumed that migration and rotation of nuclei occur easily on Si substrates under low-energy-ion irradiation, similarly to in cases using noble metals, since the initial clusters on the Si substrates are embryonic. The results indicated that diamond growth on Si substrate follows a semi-graphoepitaxial growth pattern due to the transfer of information regarding the surface morphology of the substrate and crystal direction to the nuclei. In addition, we explained the mechanism of epitaxial growth of diamond via interlayers using an embryonic cluster model. (C) 1998 Elsevier Science S.A.
Scientific journal, English

平成9年度 調査・試験研究成果報告概要
木村 忠正
故障物理研究委員会 , RCJ会報、日本電子部品信頼性センター, 25, 1, 5-6, May 1998
Japanese

Erドープポーラスシリコンの酸素プラズマ処理
出島 徹; 一色秀夫; 湯郷成美; 齋藤理一郎; 木村忠正
第45回応用物理学会春季講演（東京工科大学）, 30pZQ/5, Mar. 1998
Japanese

最新フラッシュメモリ技術の信頼性
木村 忠正
平成9年度 故障物理研究委員会 成果報告書, 日本電子部品信頼性センター, Mar. 1998
Japanese

エルビウムドープ多孔質シリコンの 1.54$\mu$m 発光メカニズムと高効率化
木村忠正
平成7年度～平成9年度科学研究費補助金(基盤研究((B)(2))研究成果報告書, Mar. 1998
Japanese

Enhanced Yb$^ 3+ $-related 0.98 $\mu$m emission in porous silicon and its time decay characteristics
T. Kimura; Y. Nishida; A. Yokoi; R. Saito
J. Appl. Phys, 83, 2, pp.1005-1008, Jan. 1998
Scientific journal, English

Time decay characteristics of the Yb3+ - Related 0.98 mu m emissions in porous silicon
T Kimura; Y Nishida; T Dejima; R Saito; H Isshiki
MATERIALS AND DEVICES FOR SILICON-BASED OPTOELECTRONICS, MATERIALS RESEARCH SOCIETY, 486, 293-298, 1998, Enhanced emissions at 0.98 mu m of Yb3+ ions (F-2(6/2) --> F-2(7/2)) incorporated in porous silicon are obtained when the host porous silicon is pre-annealed in an O-2 containing atmosphere. Time decay characteristics are measured for the Yb3+-related 0.98 pm emissions as well as for the emissions of these host porous silicon between 20 K and 300 K. The decay of the Yb3+ peak at 20 K is characterized with a fast (similar to 30 mu s) and a slow decay time (less than or equal to similar to 400 mu s), whereas it is fitted with one slow decay time (similar to 390 mu s) at 300 K. The results are explained in terms of two optical centers: one has a fast fluorescent lifetime with a large temperature quenching, and the other has a slow fluorescent lifetime which is nearly constant between 20 K and 300 K.
International conference proceedings, English

Optical activation of erbium doped porous silicon by hydrogen plasma treatment
T Dejima; R Saito; S Yugou; H Isshiki; T Kimura
MATERIALS AND DEVICES FOR SILICON-BASED OPTOELECTRONICS, MATERIALS RESEARCH SOCIETY, 486, 287-292, 1998, Er3+-doped porous silicon (Er:PS) shows strong room temperature emissions at similar to 1.54 mu m. However, its spectrum is usually much broader than that of Er-doped crystalline silicon (full-width at half maximum - FWHM - is similar to 10 nm). It is probably because Er ions are located in amorphous phases. We report in this paper that strong and very sharp Er3+ 1.54 mu m emissions are obtained, when Er:PS samples are treated in a hydrogen plasma. Porous silicon layers are formed by anodic etching and then doped with Er3+ ions in an ErCl3/ethanol solution by an electrochemical method, and then treated in a hydrogen plasma at similar to 1000 degrees C from 0.5 min to 90 min for the optical activation. Several sharp peaks are observed at 20K, of which the strongest peak is located at 1.538 mu m with an FWHM less than 1 nm. This value is comparable to that obtained from Er3+-doped crystalline silicon formed by means of molecular beam epitaxy (MBE) or ion implantation. Comparisons are made among hydrogen plasma, argon plasma, H-2 flow and vacuum for the post-dope annealing atmosphere. Fourier-transform infrared (FT-IR) absorption and secondary ions mass spectrometry (SIMS) measurements are also carried out. We conclude that preferential etching of amorphous surface layers, and termination of dangling bonds of silicon nanocrystallites with hydrogen atoms and formation of Er-H complexes may be responsible for the strong and sharp Er3+-related luminescence.
International conference proceedings, English

H. Ibach, H. Lueth 著: 固体物理学 -- 新世紀物質科学への基礎
石井 力; 木村 忠正
シュプリンガー・フェアラーク東京, 1998
Japanese

Raman Intensity of Single-Wall Carbon Nanotubes
R. Saito; T. Takeya; T. Kimura; G. Dresselhaus; M. S. Dresselhaus
Phys. Rev., B57, pp.4145-4153, 1998
English

LSI の信頼性設計・評価用TEG (エレクトロマイグレーション，ホットキャリア評価用TEG について)
木村忠正
平成８年度半導体故障物理研究委員会成果報告書, 日本電子部品信頼性センター, Mar. 1997
Japanese

Mechanisms for implantation induced interdiffusion at In0.53Ga0.47As/In0.52Al0.48As heterointerfaces
T Kimura; M Saito; S Tachi; R Saito; M Murata; T Kamiya
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, ELSEVIER SCIENCE SA LAUSANNE, 44, 1-3, 28-32, Feb. 1997, Si, Al, B, Ga and Zn ions are implanted into 5.9 nm thick In0.53Ga0.47As/In0.52Al0.48As quantum wells, and the interdiffusion of the constituent column III atoms (In, Ga and Al) due to subsequent annealing is studied by monitoring a shift in the peak energy of the photoluminescence from the well. Blue (Al reversible arrow Ga) and red (In reversible arrow Ga) shifts are observed, depending on the implant ion species, doses, energies or the depth of the well. These shifts occur almost in the initial stage (almost within 15 s) for the isothermal annealing and then level off for longer annealing times except in the case of Si ion implantation. This enhanced interdiffusion is due to the implantation induced defects (formation of column III interstitials and vacancies) and is explained in terms of the deposited energy of the implant ions at the well. As for Si, the interdiffusion does not stop but continues for longer annealing times and is explained in terms of impurity effects. (C) 1997 Elsevier Science S.A.
Scientific journal, English

信頼性ハンドブック「半導体デバイスの故障メカニズムと寿命分布」
木村 忠正
日本信頼性学会, pp. 525-543, 1997
Japanese

工業材料大辞典 (高橋 清，新居 和嘉，宮田 清蔵，柳田 博明 監修)
木村 忠正
工業調査会, 1997
Japanese

Selective growth of oriented diamond particles
K Semoto; S Yugo; T Kimura
DIAMOND FILMS AND TECHNOLOGY, MYU K K, 7, 1, 41-47, 1997, An established technology for controlling diamond crystal growth is required for practical use of diamond thin films. The purpose of this study is to selectively grow oriented diamond particles and to investigate the mechanism of heteroepitaxial growth using the bias method. As a result, we succeeded in growing diamond particles in a SiO2 stripe pattern on a silicon substrate by optimizing the bias condition. In addition, when an optimal mask stripe width was selected, diamond particles were grown along a straight line. The orientation of the particles was closely related to the bias voltage and nucleation density of the grown particles. (100) Facet diamond particles were observed along the [110] direction (the same direction as that of the mask stripe) when the methane concentration was 2%, bias voltage was - 60 V and mask stripe width was 1 mu m. A regular lengthwise and widthwise pattern was observed on the substrate surface immediately after bias treatment at - 60 V, and the orientation of particles was considered to be related to this regular pattern. The results suggest that diamond-oriented growth follows a semi-graphoepitaxial growth pattern.
Scientific journal, English

Excess Li ions in a small graphite cluster
M. Nakadaira; R. Saito; T. Kimura; G. Dresselhaus; M.S. Dresselhaus
J. Mater. Res., 12, pp. 1367-1375, 1997
English

Analysis of heteroepitaxial mechanism of diamond grown by chemical vapor deposition
S. Yugo; N. Nakamura; T. Kimura
8the European Conf, on Diamond, Diamond-like and Related Materials, Edinburgh, Abst. 15-003, 1997
English

Auger deexcitation of the 1.54 $\mu$m emission of Er and O implanted silicon
T. Nakanose; T. Kimura; H. Isshiki; S. Yugo; R. Saito
IBA-14, Ecaat-6, Dresden/Germany, Jul. 1996
English

Photoluminescence of erbium-diffused silicon
H. Horiguchi; T. Kinone; R. Saito; T. Kimura; T. Ikoma
Materials Research Society Symposium Proceedings vol.422, Rare Earth Doped Semiconductors II, ed. by S. Coffa, A. Polman, and R.N.Schwartz, pp.81-86, Apr. 1996
English

日本工業規格: 集積回路用語 JIS C 5610, 日本工業調査会審議
木村 忠正
日本規格協会発行, 1996
Japanese

日本工業規格: 集積回路用語 JIS C 5610, 日本工業調査会審議
木村 忠正
日本規格協会, 1996
Japanese

The cuase of suppression of diamond nucleation density
S. Yugo; K. Semoto; T. Kimura
Diamond and Related Materials, 5, pp.25-28, 1996
English

A verification of diamond nucleation model
S. Yugo; T. Kimura
Proc. Intern. Korean Diamond Symp., Seoul, Abst.8-11, 1996
English

Luminescence of rare earth doped porous silicon
T. Kimura; I. Hosokawa; Y. Nishida; T. Dejima; R. Saito; T. Ikoma
Materials Research Society Symposium Proceedings,vol.422, Rare Earth Doped Semiconductors II, ed. by S. Coffa, A. Polman, and R.N.Schwartz, pp.149-154, 1996
English

III. 半導体故障物理研究委員会
木村忠正
RCJ会報, 22, 1, 15-16, May 1995
Japanese

A MODELING OF DIAMOND NUCLEATION
S YUGO; K SEMOTO; K HOSHINA; T KIMURA; H NAKAI
DIAMOND AND RELATED MATERIALS, ELSEVIER SCIENCE SA LAUSANNE, 4, 7, 903-907, May 1995, Recently we proposed a model for diamond nucleation by means of the substrate bias pretreatment method. In order to verify the effectiveness of this model, the nucleation process was directly observed by transmission electron microscopy (TEM). The Si (100) substrate was treated with methane (concentration 40%) and biased at -100 V; then a cross-section of this sample was observed using TEM. The growth of tree-like non-crystalline carbon from convex parts of the substrate with diamond micrograins within them was observed. After the etching of this substrate with hydrogen plasma for 5 min, the diamond component increased. Furthermore, when this substrate was treated with methane (concentration 0.5%) for 5 min to allow the growth of diamond, 5-10 nm diamond crystals with a clearly defined shape grew.
The results of evaluation of the nucleation process on the basis of this TEM observation were not contradictory to the conclusions drawn using our previous model.
Scientific journal, English

半導体集積回路におけるインプロセス信頼性技術に関する調査報告書
木村忠正
日本電子部品信頼性センター, Mar. 1995
Japanese

Ion beam induced interdiffusion at the InGaAs/InAlAs interfaces
T. Kimura; S. Yamamura; K. Suzuki; S. Yugo; R.Saito; M. Murata; T. Kamiya
IBMM'95 Canberra, Australia, 2 Feb 95 ～ 10, Feb. 1995
English

Ion beam induced interdiffusion at the InGaAs/InAlAs interfaces
T. Kimura; S. Yamamura; K. Suzuki; S. Yugo; R.Saito; M. Murata; T. Kamiya
Nuclear Instruments and Methods in Physics Research B, 106, pp.951-954, 1995
English

Photoluminescence of ytterbium doped porous silicon
T. Kimura; A. Yokoi; Y.Nishida; R.Saito; S. Yugo; T.Ikoma
Appl. Phys. Lett, 67, pp.2687-2689, 1995
English

Time-resolved study on the impact excitation and quenching processes of the 1.54$\mu$m electroluminescence emission of Er ions in InP, . \bf ,
T. Kimura; H. Isshiki; H. Ishida; S. Yugo; R. Saito; T. Ikoma
J. Appl. Phys, 76, (6), pp.3714-3719, Sep. 1994
English

Electrochemical Er doping of porous silicon and its room-temperature luminescence at $\sim$ 1.54 $\mu$m
T. Kimura; A. Yokoi; H. Horiguchi; R. Saito; T. Ikoma; A. Sato
Appl. Phys. Lett, 65 (8), pp. 983-985, Aug. 1994
English

Room Temperature Photoluminescnece of Er-doped Porous Silicon at 1.54 $\mu$m
T. Kimura; A. Yokoi; H. Horiguchi; R. Saito; R. Ikeda; A. Sato
Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, Yokohama, Japan, PA-3-(3), pp.488-490, Aug. 1994
English

高信頼化が進む半導体デバイスにおける故障物理の重要性(Tutorial Session)
木村忠正
第24回日科技連信頼性・保安性シンポジウム, Jul. 1994
Japanese

I. 半導体故障物理研究委員会
木村忠正
RCJ会報, 21, 1, 4-5, May 1994
Japanese

半導体集積回路におけるインプロセス信頼性技術に関する調査中間報告書
木村忠正
日本電子部品信頼性センター, Mar. 1994
Japanese

Relativistic Effect on Multiplet Terms of Rare Earth Ions
S. Itoh; R. Saito; T. Kimura; S. Yabushita
J. Phys. Soc. Jpn, 63, no.2, pp.807-813, Feb. 1994
English

Infrared-active modes of C$_{70}$
Y. Shinohara; R. Saito; T. Kimura; G.~Dresselhaus; and M; S.~Dresselhaus
Chem. Phys. Lett, 227, pp.365-370, 1994
Scientific journal, English

Defects-enhanced interdiffusion at the InGaAs/InAlAs interface due to Si ion implantation
S. Yamamura; R. Saito; S. Yugo; T. Kimura; M. Murata; T. Kamiya
J. Appl. Phys, vol.75, no.5, pp.2410-2414, 1994
English

Some application of diamond nucleation by bias pretreatment method
S. Yugo; K. Semoto; T. Kimura; T. Kazahaya
4th Intern, Conf, New Diamond Science and Technology, Tsukuba, 1994
English

A modelling of diamond nucleation
S. Yugo; K. Semoto; H. Hoshina; T. Kimura; H. Nakai
Diamond Films '94, Ciocco, Abst.9, 1994
English

Thermoelectric properties of CVD a-Si-B-P compound
S. Yugo; T. Kimura
Proc. 12th Int. Conf. on Thermoelectrics, Yokohama, pp.103-108, 1994
English

イオン打ち込みを利用したInGaAs/InAlAs 量子井戸構造の混晶化
山村真一; 鈴木和久; 斎藤理一郎; 湯郷成美; 木村 忠正; 神谷武志; 村田道夫
信学技報、TECHNICAL REPORT OF IEICE. ED93-130,CPM93-101, The Institute of Electronics, Information and Communication Engineers, 93, 326, 59-64, Nov. 1993, Interdiffusion at an InGAs, InAlAs heterointerface due to Si ion implantation was studied by measuring the shift in the photoluminescence peaks from InGaAs quantum wells.The interdiffusion between Ga and Al was found to occur within several seconds and was ascribed to defect-induced interdiffusion.Both direct ion mixing and impurity-induced interdiffusion were found very small.Unimplanted samples showed no interdiffusion except a slight interdiffusion between Ga and In under high-temperature and long-time annealing conditions.The maximum diffusion length is estimated at about 3.5nm.
Japanese

半導体デバイスの寿命分布と加速試験
木村忠正
(招待講演) RCJ第3回 信頼性シンポジウム記念講演予稿集, 日本電子部品信頼性センター, 13-20, Nov. 1993
Japanese

IV. 半導体故障物理研究委員会（応力と半導体集積回路の信頼性に関する調査研究）
木村忠正
RCJ会報, 20, 2, Jul. 1993
Japanese

応力と半導体集積回路の信頼性に関する調査研究報告書
木村忠正
日本電子部品信頼性センター, Mar. 1993
Japanese

NUCLEATION MECHANISMS OF DIAMOND IN PLASMA CHEMICAL-VAPOR-DEPOSITION
S YUGO; T KIMURA; T KANAI
DIAMOND AND RELATED MATERIALS, ELSEVIER SCIENCE SA LAUSANNE, 2, 2-4, 328-332, Mar. 1993, In a recent paper, we reported that a density of diamond nuclei as high as 10(10) cm-2 was attained on a mirror-polished silicon surface by pretreating the substrate surface in a hydrogen plasma containing a high concentration of methane and applying a negative bias. Under the most suitable conditions giving the highest density of diamond nuclei, i.e. pretreatment in hydrogen plasma with a methane content of 40% at a bias voltage of -100 V for 5 min, the obtained growth product was of star-ball shape consisting of amorphous carbon, silicon carbide and diamond. Amorphous carbon was found to be easily etched by the hydrogen plasma in the early stage of diamond growth after the pretreatment.
Based on the above results. we present a model suggesting the mechanisms for the enhancement of diamond nucleation. The application of a negative bias collects carbon ions at higher rates onto the silicon surface, and increases their bond strength with the surface silicon owing to ion mixing. This enhances the formation of carbon clusters, overcoming re-evaporation and diffusion. The impinging energetic ions destroy the weak sp2 structure and increase the sp3 structure, leading to the formation of diamond nuclei precursors.
Scientific journal, English

Electrical and optical characterization of defect levels caused in InGaAs by boron ion implantation
S. Yamamura; T. Kimura; S. Yugo; R. Saito; M. Murata; T. Kamiya
Nuclear Instruments and Methods in Physics Research, B80, 81, pp.632-635, 1993
Scientific journal, English

Ab initio calculations of the multiplets terms of Tm$^ 3+ $
S. Itoh; R. Saito; T. Kimura; S. Yabushita
J. Phys. Soc. Jpn., 62, pp.2924-2933, 1993
Scientific journal, English

Diamond nucleation on chemically-pretreated Si substrates by microwave plasma chemical vapor deposition
S.Yugo; K. Yamamori; T. Kimura
Diamond Film and Technology, 2, 4, 177-182, 1993
Scientific journal, English

Mechanism of diamond nucleation by energetic ions in plasma chemical vapor deposition
S. Yugo; T. Kimura
Proc. of The Third Intern. Symposium on Diamond Materials (183-ECS), Honolulu, USA, pp.78-86, 1993
English

A general approach to the ion impinging effect on the generation of diamond nuclei
S. Yugo; T. Kimura
Diamond Films '93, Conf. Diamond and Related Materials, Portugal, 1993
English

Excitation and Relaxation processes of Impact Excitation Emission of Er$^ 3+ $ Ions In InP
T. Kimura; H. Ishida; S. Yugo; R. Saito; H. Isshiki; T. Ikoma
1993 MRS SPRING MEETING. San Francisco, April 12-16, E4.9, Materials Research Society Symposium Proceedings, 301, pp.293-298, 1993
English

The mechanism for the compositional disordering of InGaAs/InAlAs quantum well structures by silicon ion implantation and annealing
S. Yamamura; T. Kimura; R. Saito; S. Yugo; M. Murata; T. Kamiya
20th International Symposium on Gallium Arsenide and Related Compounds, Freiburg, Germany, p.91, 1993
English

EFFECTS OF HYDROGEN PLASMA ON THE DIAMOND NUCLEATION BY CHEMICAL VAPOR-DEPOSITION
S YUGO; T KANAI; T KIMURA
DIAMOND AND RELATED MATERIALS, ELSEVIER SCIENCE SA, 1, 9, 929-932, Sep. 1992, By introducing defects which are to be a nucleation site upon the substrate surface, diamond nucleation can be promoted. However, such a nucleation site is also affected by the erosion of H-2 plasma. H-2 plasma etching occurred by chemical erosion rather than by physical erosion, and the erosion effects of the accelerated ions are much stronger. Minute defects prevent the nucleation from occurring and it is necessary that the nucleation site is of adequate size. The fact that a nucleation site of such a size is required means that the atoms reaching the substrate surface should be collected in a wide area and be condensed to form a critical nucleus in a short time. This can be improved by adopting such a measure as raising the supersaturation degree of the carbon.
Scientific journal, English

Cluster calculations of rare-earth ions in semiconductors
R.Saito; T. Kimura
Physical Review B, 46, 3, pp.1423-1428, Jul. 1992
Scientific journal, English

III. 半導体故障物理研究委員会
木村忠正
木村忠正, 19, 1, 5-6, May 1992
Japanese

半導体中の希土類元素の発光メカニズムとその応用に関する研究
木村忠正
平成元年度～平成3年度科学研究費補助金(一般研究C)研究成果報告書, Mar. 1992
Japanese

応力と半導体集積回路の信頼性に関する調査研究中間報告書
木村忠正
財団法人日本電子部品信頼性センター、RS-3-KS-02, Mar. 1992
Japanese

A new method for the generation of diamond nuclei by plasma CVD
S. Yugo; T. Kanai; T. Kimura
Diamond and Related Materials, pp.1388-1391, 1992
Scientific journal, English

Time-Resolved Study on the Impact-Excited 1.54$\mu$m Emission of Er$^ 3+ $Ions in InP and Its Excitation and Quenching Mechanisms
T. Kimura; H. Isshiki; H. Ishida; S. Yugo; R. Saito; T. Ikoma
Reprinted from Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials, August 26-28, 1992, Tsukuba Center Building, Tsukuba, Japan, pp.246-248, 1992
English

Evaluation of impact cross section and excitation emission efficiency of Er$^ 3+ $ions in InP
T. Kimura; H. Isshiki; H. Ishida; R. Saito; S. Yugo; T. Ikoma
Paper presented at Int.Symp.GaAs and Related Compounds, Inst. Phys. Conf. Ser. No.129 : chapter6, Karuizawa, pp.537-542, 1992
English

Electrical and Optical Characterization of Defect Levels Caused in InGaAs by Boron Ion Implantation
S. Yamamura; T. Kimura; S. Yugo; R. Saito; M. Murata; T. Kamiya
Eighth International Conference on ION BEAM MODIFICATION OF MATERIALS.September 7-11, IBMM'92, Heidelberg, Germany, p.216, 1992
English

Nucleation mechanisms of diamond in plasma chemical vapor deposition
S. Yugo; T. Kimura
3rd Int. Conference on New Diamond Science and Technology, Heidelberg,Abst. 8.54, 8, 54, 1992
English

Impact Excitation Electroluminescence Spectra of Er ions InP and the possibility of an efficient EL Diode at 1.54$\mu$m
T. Kimura; H. Isshiki; R. Saito; S. Yugo; T. Ikoma
Proceedings 1991 International Semiconductor Device Research Symposium, December 4-6, 1991 Charlottesville, VA, USA, pp.359-361, Dec. 1991
English

InPにドープしたEr$^ 3+ $イオンのr電子衝突励起発光と発光素子への可能性
一色秀夫; 斉藤理一郎; 木村 忠正; 生駒俊明
電子情報通信学会、電子デバイス研究会, ED91-120, CPM91-91, 25, Nov. 1991
Japanese

超LSI時代の故障解析技術
木村忠正
REAJ, 13, 2, 19-27, Jul. 1991
Japanese

最近の半導体デバイスの故障物理動向
木村忠正
REAJ, 13, 2, 19-27, Jul. 1991
Japanese

LSIの故障モデル式と加速寿命試験に関する調査研究成果報告書
木村忠正
日本電子部品信頼性センター, Mar. 1991
Japanese

プラズマ法、クラスタ法によるSi系熱電材料の開発
湯郷成美; 木村 忠正; 竹澤武重
(重点領域研究エネルギーの変換技術)研究成果報告書, pp.326-334, Jan. 1991
Japanese

Generation of diamond nuclei by electric field in plasma chemical vapor deposition
S. Yugo; T. Kanai; T. Kimura; T. Muto
Appl. Phys. Lett., 58, 10, pp.1036-1038, 1991
Scientific journal, English

Impact excitation of the Erbium-related 1.54$\mu$m Luminescence Peak in Erbium-doped InP
H. Isshiki; H. Kobayashi; S. Yugo; T. Kimura; T. Ikoma
Appl. Phys. Lett., 58, 4, pp.484-486, 1991
Scientific journal, English

.54$\mu$m Electroluminescence by Electron Impact Excitation of Er Atoms Doped in InP
H. Isshiki; H. Kobayashi; S. Yugo; T. Kimura; T. Ikoma
Jpn. J. Appl. Phys., 30, Part2, pp.L225-L227, 1991
Scientific journal, English

Characteristics of the Electroluminescence and Photoluminescence Emission of Erbium Ions Doped in InP and the Energy Transfer Mechanism
H. Isshiki; R. Saito; T. Kimura
J.Appl. Phys, 70, 11, pp.6993-6998, 1991
Scientific journal, English

Some observations on the nucleation sites in diamond growth by plasma CVD
S. Yugo; A. Izumi; T. Kanai; T. Muto; T. Kimura
Proc. 2nd. Int. Conf. New Diamond Science and Technology, KTK Scientific Publishers, Washington D.C., Tokyo, Japan, pp.385-389, 1991
Scientific journal, English

A New Method for the Generation of Diamond Nuclei by Plasma CVD
S. Yugo; T. Kanai; T. Kimura
Proc. Diamond Films, \bf 91, 2nd European Conference Diamond and Diamond-like Carbon Coatings, Abst. 8.4, Nice, France, 1991
English

CVDによるa-Si,Ge膜の熱電気特性
木村 忠正; 湯郷成美
昭和63年度科学研究費(重点領域研究エネルギーの変換技術)、研究成果報告書, 3368-3372, Mar. 1990
Japanese

CVDによるa-Si,Ge膜の熱電気特性
木村 忠正; 湯郷成美
平成元年度科学研究費(重点領域研究エネルギーの変換技術)、研究成果報告書, 368-372, Mar. 1990
Japanese

THE MECHANISM FOR PHOTOCONDUCTIVE RESPONSE OF B-IMPLANTED AND ANNEALED INGAAS LAYERS
T KIMURA; S YAMAMURA; K KOIKE; T MORITA; S YUGO; T KAMIYA
VACUUM, PERGAMON-ELSEVIER SCIENCE LTD, 41, 4-6, 1138-1140, 1990
Scientific journal, English

EFFECTS OF ELECTRIC-FIELD ON THE GROWTH OF DIAMOND BY MICROWAVE PLASMA CVD
S YUGO; T KIMURA; T MUTO
VACUUM, PERGAMON-ELSEVIER SCIENCE LTD, 41, 4-6, 1364-1367, 1990
Scientific journal, English

Realization of Fast InGaAs Photoconductive Response by Ion Implantation and Annealing with No Degradation of Peak Responsivity
T. Kimura; S. Yamamura; K. Koike; T. Morita; S. Yugo; T. Kamiya
Jpn. J. Appl. Phys, 7, pp.1270-1275, 1990
Scientific journal, English

Thermoelectric properties of amorphous silicon alloys
S. Yugo; H. Watanabe; J. Yamakawa; T. Kimura
Proc. Int. Conf. Electronic Components and Materials, 1990
English

Nucleation process of diamond by plasma CVD
S. Yugo; T. Kimura; T. Kanai
Proc. 1st. Int. Conf. New Diamond Science and Technology, KTK Scientific Publishers, Tokyo, pp.119-123, 1990
English

Nucleation of diamond by micro-wave plasma CVD under electric fields
S. Yugo; T .Kanai; T. Kimura; A. Ono
Proc. Int. Symp. on Carbon New Processing and New Applications, 2, pp.944-947, 1990
English

1.54$\mu$m Electroluminescence by Electron Impact Excitation of Er Atoms Doped in InP
H. Isshiki; H. Kobayashi; S. Yugo; T. Kimura; T. Ikoma
Extended Abstracts of the 22nd Conf. on SSDM , Sendai,, pp.605-608, 1990
English

Emission of the 1.54$\mu$m Er-related peaks by impact excitation of Er atoms in InP and its characteristics
H. Isshiki; H. Kobayashi; S. Yugo; R. Saito; T. Kimura; T. Ikoma
Proceedings of SPIE's International Conference on Physical Concepts of Materials for Novel Optoelectronic Device Applications, SPIE vol.1361, Aachen, Germany, 1361, pp.223-227, 1990
English

Thermoelectric propertise of amorphous silicon, germaniumu and their compounds fabricated by chemical vapor deposition
T. Kimura; S.Yugo
Researches Pursued under the Grant-in-Aid on Priority-Area Research Energy Conversion and Utilization with high Effeciency, Surpoted by ministry of Education, Science and Culture, Japan, 339-342, 1990
English

半導体デバイスの故障モデル式と加速試験法
木村忠正
RCJ会報, 17, 1, 4-6, 1990
Japanese

Thermoelectric propertiese of amorphous silicon, germaniumu and their compounds fabricated by chemical vapor deposition
T. Kimura; S.Yugo
Researches Pursued under the Grant-in-Aid on Priority-Area Reserache Energy Conversion and Utilization with high Efficiency, Surpoted by ministry of Education, Science and Culture, Japan, 339-342, 1990
English

CVDによるa-Si,Ge膜の熱電気特性
木村 忠正; 湯郷成美
昭和63年度科学研究費(重点領域研究エネルギーの変換技術)、研究成果報告書, 319-322, Mar. 1989
Japanese

CVDによるa-Si,Ge膜の熱電気特性
木村 忠正; 湯郷成美
昭和63年度科学研究費(重点領域研究エネルギーの変換技術)、研究成果報告書, 319-322, Mar. 1989
Japanese

エレクトロニクス技術・半導体電子部品 第３巻 「ダイヤモンド半導体の可能性」、2000年をターゲットとする技術予測シリーズ
湯郷成美; 木村 忠正
日本ビジネスレポート社, pp.107-117, 1989
Japanese

Deep Levels in Indium Phosphide Implanted with Argon and Phosphorus
T. Kimura; M. Kuwata; L. Ji-Kui; Y. Adachi
Nucl. Instru. and Methods in Phys. Res, B37/28, pp.321-324, 1989
Scientific journal, English

Formation of Silicon Carbide Layers by The Ion Beam Technique and Their Electrical Properties
T. Kimura; S. Yugo; Zhou S.B; Y. Adachi
Nucl.Instru. and Methods in Phys. Res., B39, pp.238-241, 1989
Scientific journal, English

The mechanism for photoconductive response of B-implanted and annealed InGaAs layers
T. Kimura; S. Yamamura; K. Koike; T. Morita; S. Yugo; T. Kamiya
11th Int. Vacuum Conf.(IVC-11) and 7th Int.Conf.Solid Surfaces(ICSS-7), K''oln, Germany, p.191, 1989
English

Effects of Electric field on The Growth of Diamond by Micro-Wave Plasma CVD
S. Yugo; T. Kimura; T. Muto
11th Int. Vacuum Cong.(IVC-11) and 7th Int.Conf.Solid Surfaces(ICSS-7), K''oln, Germany, Abst, p.275, 1989
English

イオン注入と高速ランプアニールによるInGaAs光伝導型素子の高速高感度化
山村真一; 木村 忠正; 湯郷成美; 小池賢一; 森田哲郎; 神谷武志
電子通信学会電子デバイス研究会資料、ED 89-62, 37-43, 1989
Japanese

半導体の故障物理と故障解析法の展望, 半導体・集積回路技術
木村忠正
第36回シンポジウム講演論文集, 37-42, 1989
Japanese

イオン注入と高速ランプアニールによるInGaAs光伝導型素子の高速高感度化
山村真一; 木村 忠正; 湯郷成美; 小池賢一; 森田哲郎; 神谷武志
電子通信学会電子デバイス研究会資料, 89, 62, 37-43, 1989
Japanese

半導体の故障物理と故障解析法の展望, 半導体・集積回路技術
木村忠正
第36回シンポジウム講演論文集, 37-42, 1989
Japanese

半導体デバイスの故障解析技術
木村忠正
日本電子部品信頼性センター, 1989
Japanese

半導体デバイスの故障解析技術
木村忠正
半導体故障物理研究委員会成果報告 R CJ会報, 16, 1, 16-18, 1989
Japanese

The Effect of mixing ions on the formation process of beta－SiC fabricated by ion-beam mixing
T. Kimura; H. Yamaguchi; Luo.Ji-Kui; S. Yugo; Y. Adachi; Y. Kazumata
Thin Solid Films, 159, pp.117-127, 1988
Scientific journal, English

Deep Levels in Argon-Implanted and Annealed Indium Phosphide, Jpn
Luo Ji-Kui; T. Kimura; S. Yugo; Y. Adachi
J. Appl. Phys, 26, pp.582-587, 1987
English

Effect of the Subsequent Ion Irradiation on the Formation Process of beta－SiC from Si-C mixtures Fabricated on Si by Ion Implantation
T. Kimura; H. Yamaguchi; S. Yugo; Y. Adachi
"Novel Refractory Semiconductors" edit. by Emin, T.L. Aselage and C.Wood, Material Research Society Symposia Proceedings, 97, pp.289-294, 1987
English

Growth of Diamond Films by Plasma CVD
S. Yugo; T. Kimura; H. Kanai; Y. Adachi
"Novel Refractory Semiconductors" edit. by D.Emin, T.L.Aselage and C.Wood, Material Research Society Symposia Proceedings, 97, pp.327-332, 1987
English

半導体集積回路におけるエレクトロマイグレーションに関する文献調査成果報告書
木村忠正
日本電子部品信頼性センター, 1987
Japanese

ESR of Pyro-Graphite Irradiated by Ions -I. Low Energy Ion Bombardments
Y. Kazumata; S. Yugo; T. Kimura; Y. Sato; Y. Nakano
J. Phys. Chem. Solids, 47, pp.617-631, 1986
English

ESR of Pyro-Graphite Irradiated by Ions- II. High Energy Ion Bombardments
Y. Kazumata; S. Yugo; T. Kimura; Y.Nakano
J. Phys. Chem. Solids, 47, pp. 633-645, 1986
English

The Exchange Coupling Model in Neutron Irradiated Graphite
Y. Kazumata; Y. Nakano; S. Yugo; T. Kimura
Phys. Stat. Solidi (b), 136, pp.325-329,, 1986
English

Formation Process of $\beta$－SiC Synthesized by Ion Beam Technique
T. Kimura; Luo Ji-Kui; H.Yamaguchi; S.Yukizane; Y.Adachi
The 17th Symposium on Ion Implantation and Submicron Fabrication 225-228, 225-228, 1986
English

Arイオン打ち込みにより生じるInP中の深い準位とそのアニール特性
李; 木村 忠正; 湯郷成美; 安達芳夫
電子通信学会デバイス研究会資料、 ED86-117, 91-98, 1986
Japanese

イオンビーム合成による$\beta$－SiC形成プロセス
木村 忠正; 山口浩之; 湯郷成美; 行実重利; 安達芳夫
第17回理研シンポジウム予稿集, 225-228, 1986
Japanese

Formation process of $\beta$－SiC synthesized by ion beam technique
T. Kimura; Luo Ji-Kui; H.Yamaguchi; S.Yukizane; Y.Adachi
The 17th Symposium on Ion Implantation and Submicron Fabrication, 225-228, 1986
English

Arイオン打ち込みにより生じる InP 中の深い準位とそのアニール特性
駱季奎; 木村 忠正; 湯郷成美; 安達芳夫
電子通信学会電子デバイス研究会資料, 87, 117, 91-98, 1986
Japanese

イオンビーム合成による$\beta$－SiC形成プロセス
木村 忠正; 駱季奎; 山口浩之; 湯郷成美; 行実重利; 安達芳夫
第17回理研シンポジウム予稿集, 225-228, 1986
Japanese

Auger Electron Spectroscopy Analysis of SiC Layers Formed by Carbon Ion Implantation into Silicon
T. Kimura; S. Yugo; S. Kagiyama; Y. Machi
Thin Solid Films, 122, pp.165-172, 1985
English

Study of Ion Irradiation Damage of Graphite Surface
S. Yugo; T. Kimura; Y. Kazumata
Carbon, 23, pp.147-149, 1985
English

Thermoelectric Figure of Merit of Boron Phosphide
S. Yugo; T. Sato; T. Kimura
Appl. Phys. Lett, 46, pp.842-844, 1985
English

Low Temperature Formation of beta－SiC by Ion Beam Mixing, Jpn
T. Kimura; Y. Tatebe; A. Kawamura; S. Yugo; Y. Adachi
J. Appl. Phys, 24, pp.1712-1715, 1985
English

メタンプラズマ中に置かれたSi基板上の生成物
湯郷成美; 岩沢 優; 木村 忠正; 行実重利
真空, 第28, 第 11, pp.791-795, 1985
Japanese

ESR of Pyrolytic Graphite Irradiated by Ions
Y.Kazumata; S.Yugo; T. Kimura
JAERI-M, 85, 12, 194-205, 1985
English

イオンミキシングによる $\beta$－SiCの形成
木村 忠正; 湯郷成美; 数又幸生
原研施設共同利用研究報告書(昭和59年度), 282-284, 1985
Japanese

プラスチックパッケージ半導体デバイスの信頼性評価方法に関する文献調査成果報告書
木村忠正
日本電子部品信頼性センター, 1985
Japanese

ESR of Pyrolytic Graphite Irradiated by C18$^+$ Ions
Y.Kazumata; S.Yugo; T. Kimura
JAERI TANDEM Annual Report, 1984
English

高温直接発電を目的とした焼結体ボロンフォスファイドの研究
湯郷成美; 木村 忠正; 河野勝泰
科研エネルギー特別報告書, 89-92, 1984
Japanese

半導体のイオン照射(II)
木村 忠正; 湯郷成美; 数又幸生
原研施設共同利用研究報告書(昭和58年度), 270-272, 1984
Japanese

化合物半導体デバイスの信頼性に関する文献動向調査 --その2--
木村忠正
日本電子部品信頼性センター, 1984
Japanese

Annealing Behaviour of the 0.8eV Luminescence in Undoped Semiinsulating GaAs
J. Windscheif; H. Ennen; U. Kaufmann; J. Schneider; T. Kimura
Appl. Phys. A, A30, pp.47-49, 1983
English

Ion Implantation of Carbon and Neon Ions in Pyrolytic Graphite, Jpn
S. Yugo; T. Kimura
J. Appl. Phys, 22, pp.1738-1741, 1983
English

p-Type Conversion of Semi-Insulating GaAs
U. Kaufmann; H. Ennen; T. Kimura; J. Windscheif
Fourth "Lund" International Conference on Deep Levels in Semiconductors, Hungary, 1983
English

Synthesis Mechanism of beta－SiC by Implantation Studied by Means of AES Analysis and IR Absorption,
T. Kimura; S. Yugo; S. Kagiyama; Y. Machi
Proc. IX-IVC-V-ICSS, Madrid, p.116, 1983
English

Ion Irradiation Damage of Graphite
S.Yugo; T. Kimura; Y.Kazumata
Proc. IX-IVC-V-ICSS, Madrid, p.40, 1983
English

ESR of Pyro-Graphite Irradiated by High Energy Ions
Y.Kazumata; T. Kimura; S.Yugo
JAERI TANDEM Annual Report 1982, 38-40, 1983
English

半導体のイオン照射(1)
木村 忠正; 湯郷成美; 数又幸生
原研施設共同利用研究報告書(昭和57年度), 22, 275-277, 1983
Japanese

Reduction in the Synthesis Temperature of $\beta$－SiC by Hot Implantation of Carbon Ions in Silicon
T. Kimura; S.Kagiyama; S.Yugo; S.Yukizane
The 14th Symposium on Ion Implantation and Submicron Fabrication, 53-56, 1983
English

化合物半導体デバイスの信頼性に関する文献動向調査
木村忠正
日本電子部品信頼性センター, 1983
Japanese

熱拡散によるボロンおよびリンをドープした炭素繊維の熱電能
湯郷成美; 岡部 孝; 行実重利; 木村 忠正
材料科学, 18, pp.356-360, 1982
Japanese

Characteristics of the Synthesis of beta-SiC by the implantation of Carbon Ions into Silicon
T. Kimura; S. Kagiyama; S. Yugo
This Solid Films, 94, pp.191-198, 1982
English

ESR of Irradiated-Graphite
Y. Kazumata; S. Yugo; T. Kimura
Proc. Int. Symposium on Carbon, New Processing and New Applications, Toyohashi, pp.381-384, 1982
English

イオン注入法による気相成長炭素繊維へのボロンおよびリンのドーピング :電気的性質
湯郷成美; 三崎恒男; 木村 忠正
炭素, THE CARBON SOCIETY OF JAPAN, 1981, No.104, pp.2-8, 1981, Ion implantation technique was examined for impurity doping of vapor-grown carbon fibers, and its effects on electrical properties have been investigated. Carbon fiber specimens were prepared by thermal decomposition of benzen, and were heat treated in the range of 1800-3500°C. Boron and phosphorus were used as dopants.
Both ions implanted in the doping range of 10¹⁶-10¹⁷cm^-2 give rise to serious damage of the sample. However, it is sill comfirmed that boron ions act as acceptors, and phosphorus ions as donors in carbon fibers. From the study of annealing effects of implanted carbon fibers, it is probable that defects generated by the ion implantation are of the same nature of those by electron- and neutron-irradiation.
Japanese

Structure and Annealing Properties of Silicon Carbide Thin Layers Formed by Implantation of Carbon Ions in Silicon
T. Kimura; S. Kagiyama; S. Yugo; Structure an; Annealing Properties of Silicon Carbide Thin Layers Formed by Implantation of Carbon Ions in Silicon; Thin Sol
Thin Solid Films, 81, pp.319-326, 1981
English

黒鉛の Esaki kink 効果
木村 忠正; 岡部 孝
電子通信学会電子装置研究会資料, ED76-8, 11-16, 1981
Japanese

ボロンフォスファイドの熱電能
湯郷成美; 木村 忠正; 行実重利; 関口芳信
電子通信学会デバイス研究会資料, ED81-9, 1-5, 1981
Japanese

イオン打ち込みによる化合物薄膜の合成
木村忠正
応用物理, 50, 631-637, 1981
Japanese

Thermoelectric Power of Boron Phosphide at High Temperatures
S. Yugo; T. Kimura
phys. stat. solidi(a), 59, pp.363-370, 1980
English

アルゴンイオン打ち込みによる LiNbO3 の屈折率変化
木村 忠正; 厚木和彦; 山下榮吉; 湯郷成美
電子通信学会論文誌, 第63-C巻, pp.708-709, 1980
Japanese

Humidity-Sensitive Electrical Properties and Switching Characteristics of BN Films
T. Kimura; K. Yamamoto; T. Shimizu; S. Yugo
Thin Solid Films, 70, pp.351-362, 1980
English

Siへのイオン注入により製作したSiC膜の結晶性とその電気的性質
木村 忠正; 鍵山 滋; 湯郷成美; 行実重利
第11回イオン注入とサブミクロンに関するシンポジウム, 111-114, 1980
Japanese

半導体メモリの信頼性に関する文献調査
木村忠正
日本電子部品信頼性センター, 1980
Japanese

LiNbO3 へのアルゴンイオン打ち込みによる屈折率変化
木村 忠正; 厚木和彦; 山下榮吉
特定研究 $\lceil$ 光導波エレクトロニクス$\rfloor$ 第18、19研究会資料, 356-358, 1979
Japanese

導波路型広帯域光変調素子について
厚木和彦; 早川慎二; 山下榮吉; 木村 忠正
特定研究 $\lceil$ 光導波エレクトロニクス $\rfloor$ 第15回研究会資料, 356-358, 1979
Japanese

Humidity Sensitive Threshold Switching in Silver-Boron Nitride-Silicon-Aluminum Sandwiches
T. Kimura; K. Yamamoto; S. Yugo
Appl. Phys. Lett, 33, pp.333-335, 1978
English

Humidity Sensitive Electrical Conduction of Polycrystalline Boron Nitride Films, Jpn
T. Kimura; K. Yamamoto; S. Yugo
J. Appl. Phys, 17, pp.1871-1872, 1978
English

ボロンナイトライド薄膜のスイッチングの感湿特性
木村 忠正; 山本克巳; 湯郷成美
電子通信学会電子装置研究会資料, ED78-46, 1-7, 1978
Japanese

ボロンナイトライド薄膜のスイッチングの感湿特性
木村 忠正; 湯郷成美; 山本 克巳
電子通信学会電子デバイス研究会、 ED78-46、1-7, 78, 46, 1-7, 1978
Japanese

半導体工業におけるエレクトロマイグレーションに関する文献調査(I)
木村忠正
日本電子部品信頼性センター, 1978
Japanese

半導体工業におけるエレクトロマイグレーションに関する文献調査(II)
木村忠正
日本電子部品信頼性センター, 1978
Japanese

Effect of Chemical Impurities on the Galvanomagnetic Properties of Carbon, Proc. 13th Biennial Conference on Carbon
T. Kimura; K. Yazawa
Irvine, pp.147-148, 1977
English

炭素の電流磁気効果の不純物濃度依存の解釈
木村 忠正; 矢沢一彦
炭素, No.83, pp.139-145, 1975
Japanese

炭素の異常磁気抵抗の解釈
木村 忠正; 矢沢一彦
電気通信大学学報, 25, 2, 223-231, 1975
Japanese

炭素材料のバンドパラメータの評価法, ED73-88, , 1974
木村 忠正; 矢沢一彦
電子通信学会電子装置研究会資料, ED73, 88, 1-10, 1974
Japanese

炭素材料のホール効果のドーピング依存の解釈
木村 忠正; 矢沢一彦
電気通信大学学報, 25, 1, 103-118, 1974
Japanese

炭素材料の電流磁気効果 --異常磁気抵抗の解釈
木村 忠正; 矢沢一彦
電子通信学会電子装置研究会資料, ED74-21, 21-30, 1974
Japanese

Evaluation of Energy Band Parameters of Carbon
T. Kimura; K. Yazawa
Carbon, 11, pp.139-149, 1973
English

ガン効果素子の光トリガ
木村 忠正; 柳井久義; 神山雅英
電子通信学会論文誌, 第55-C巻, pp.497-504, 1972
Japanese

グラファイトのホール効果とバンドパラメータの評価法
須川 真; 木村 忠正; 矢沢一彦
電気通信大学学報, 23, 2, 181-187, 1972
Japanese

高速光結合ディジタル素子の研究, , ,
木村 忠正; 柳井久義; 神山雅英
東京大学工学部電気工学 電子工学彙報, No.20, 12, 1971
Japanese

光によるガン効果素子のスイッチング
木村 忠正; 柳井久義; 神山雅英
電子通信学会半導体 トランジスタ研究会技術報告, SSD70-16, 1970
Japanese

光によるガン効果素子のスイッチング
木村 忠正; 柳井久義; 神山雅英
東京大学工学部付属総合試験所年報, 29, 105-110, 1970
Japanese

光結合素子の効率改善
木村 忠正; 柳井久義; 神山雅英
電子通信学会論文誌, 第51-C巻, pp.514-521, 1968
Japanese

特集： シリコンを光らせる 「シリコンを光らせるにはどうすればよいのか ＝さまざまな発光機構とそれぞれの特徴」
木村 忠正; 一色 秀夫
Dec. 2008, 光アライアンス誌 2009.1, 20, 1, 1-7, Japanese, Introduction other

「シリコン発光デバイス-現状と展望-」
木村 忠正; 一色 秀夫
Jan. 2008, 光学, 37, 1, 14-20, Japanese, Peer-reviwed, Introduction other

「シリコンフォトニクスの現状と将来」 （レーザー学会誌「シリコンフォトニクスの最前線」特集号）
木村忠正
Sep. 2007, レーザー研究, 35, 9, 548-549, Japanese, Introduction other

シリコンをベースとする発光デバイス－現状と展望－、レーザー学会誌「シリコンフォトニクスの最前線」特集号
一色 秀夫; 木村 忠正
Integration of silicon light sources on a Si chip is one of milestone to establish new paradigm of LSI systems, so-called "silicon photonics" . In recent years remarkable progress has been made in the Si wire waveguide technologies for optical interconnection on a Si chip. This paper reviews Si-related optical materials and their light emitting devices from a viewpoint of compatibility with Si wire waveguide. An ErSiO superlattice crystal that we have newly developed is introduced as one candidate of the light source material for silicon photonics. To mention the particular features, this material has a superlattice structure with 0.86-nm period and a large amount of Er (-15 %) as its constituent. In addition, the ErSiO superlattice crystal behaves as a semiconductor and the Er 4f-electrons are excitable by electron-hole pairs in the host. These show the possibilities of high optical gain and its electrical control in Er-doped waveguide amplifier (EDWA)., The Laser Society of Japan, Sep. 2007, レーザー研究, 35, 9, 566-571, Japanese, Introduction other, 0387-0200, 10019843792, AN00255326

"希土類添加半導体の可視発光とLEDの可能性"
一色秀夫; 木村忠正
Aug. 2001, 月刊ディスプレイ, 7, 8, 18-22, Japanese, Introduction other

固体物理学 -- 新世紀物質科学への基礎 （改訂版）, シュプリンガー・フェアラーク ジャパン, 2008
石井 力; 木村 忠正
Japanese, Joint translation, シュプリンガーフェアラーグ ジャパン, 2008

電子材料ハンドブック
木村 忠正; 八百; 隆文; 奥村 次徳; 豊田 太郎
Dictionary or encycropedia, Japanese, 朝倉書店, 2006

日本工業規格: 電子技術基本用語 JIS C 5600, 電子情報通信学会審議，
武藤時雄; 木村忠正; 奥村次徳; 小原實; 恒次秀起; 松島裕一; ニ川清
Dictionary or encycropedia, Japanese, 日本規格協会発行,, 2006

電子デバイス
木村忠正
Japanese, Editor, 朝倉出版, Jan. 2001

電子デバイス
木村 忠正
Japanese, Editor, 朝倉書店, 2001

半導体・金属材料用語辞典
高橋 清; 新居 和嘉; 木村; 忠正
Dictionary or encycropedia, Japanese, 工業調査会, 1999

固体物理学 -- 新世紀物質科学への基礎, シュプリンガー・フェアラーク東京, 1998
石井 力; 木村 忠正
Japanese, Joint translation, シュプリンガーフェアラーグ日本, 1998

信頼性ハンドブック「半導体デバイスの故障メカニズムと寿命分布」, pp. 525-543
Dictionary or encycropedia, Japanese, 日本信頼性学会, 1997

工業材料大辞典
高橋 清; 新居 和嘉; 宮田 清蔵; 柳田 博明
Dictionary or encycropedia, Japanese, 工業調査会, 1997

日本工業規格: 集積回路用語 JIS C 5610 (日本工業調査会審議)
Dictionary or encycropedia, Japanese, 日本規格協会, 1996

Ibach、Luth 固体物理の基礎
神谷武志; 木村 忠正; 張紀久夫
Japanese, Joint translation, 丸善, 1985

電子材料専門用語集」電子通信専門用語集 No.11
木村忠正
Dictionary or encycropedia, Japanese, 電子通信学会, 1980

“Excitation and luminescence properties of Er2SiO5 crystalline compounds controlled by the sol-gel fabrication process”,
T.Kimura; H. Isshiki
Invited oral presentation, English, SEDWAL Workshop 2008, 13-15 April 2008, Levico Terme, Trento, ITALY, SEDWAL Workshop 2008, International conference
Apr. 2008

「シリコンフォトニクスにおける光源開発の最前線」
木村 忠正
Invited oral presentation, Japanese, シリコンフォトニクス技術フォーラム, 財団法人光産業技術振興協会
Mar. 2008

“Phase separation growth of Er2SiO5 thin film in Si-rich ErSiO preform”
H.Isshiki; M.Ohe; T. Samejima; T.Ushiyama; T.Kimura
Oral presentation, English, E-MRS 2008 Spring Meeting, Strasbourg, France - May 25-30, 2008
2008

“Formation of highly-oriented layer-structured Er2SiO5 films by pulsed laser deposition”
Tadamasa Kimura; Yasuhito Tanaka; Hiroshi Ueda; Hideo Isshiki
Oral presentation, English, E-MRS 2008 Spring Meeting, Strasbourg, France - May 25-30, 2008
2008

「次世代技術ロードマップと信頼性課題（概要）」
木村 忠正
Invited oral presentation, Japanese, 2007年第17回電子デバイスの信頼性シンポジウム 信頼性セミナー, 日本電子部品信頼性センター
Nov. 2007

シリコンベース発光デバイスの最近の進歩と展望
木村 忠正; 一色秀夫
Invited oral presentation, Japanese, 第１０回ポリマー光回路(POC)研究会, 電子情報通信学会 ポリマー光回路時限研究専門委員会
Oct. 2007

GFP2007報告 光源材料・光源デバイス構造
木村 忠正
Others, Japanese, 電子情報通信学会 シリコン・フォトニクス研究会,第7回 シリコン・フォトニクス研究会
Oct. 2007

シンポジウム： シリコン・フォトニクス技術の最新動向、6p-C-4 シリコン・フォトニクスにおける発光デバイス
木村 忠正
Invited oral presentation, Japanese, 2007年（平成19年）秋季 第68回応用物理学会学術講演会, 応用物理学会
Sep. 2007

「Siベース発行材料の新潮流」 ErSiO自己組織化超格子結晶の特性と1.54mm発光素子性能評価
木村忠正; 一色秀夫
Invited oral presentation, Japanese, 第196回研究会, 光電相互変換第125委員会
May 2007

”Evaluation of the 1.54µm emission characteristics of ErSiO superlattice crystals”
Tadamasa Kimura; Tomoyuki Ushiyama; Hideo Isshiki
Oral presentation, English, E-MRS 2007 Spring Meeting, Strasbourg, France - May 28 to June 1, 2007
2007

Investigation of low temperature growth of ErSiO superlattice crystals”
H.Isshiki; T.Ushiyama; K.Tateishi; T.Shimohata; T.Kawaguchi; Y.Tsuneyasu; H.S.Choi; M.Ohe; Y.Nakayama; Y.Tanaka; T.Kimura, ”
Oral presentation, English, E-MRS 2007 Spring Meeting, Strasbourg, France - May 28 to June 1, 2007
2007

”Demonstration of ErSiO superlattice crystal waveguide toward optical amplifiers and emitters”
Hideo Isshiki; Tadmaasa Kimura
Invited oral presentation, English, IBEDM2006, IBEDM2006, Nankishirahama，Japan, International conference
Oct. 2006

“Properties of ErSiO self-organized superlattice crystals and the possibility of efficient EL diodes at 1.54μm”
Tadamasa Kimura; Hideo Isshiki
Invited oral presentation, English, IBEDM2006, IBEDM2006, Nankishirahama，Japan, International conference
Oct. 2006

「シリコン・フォトニクス技術への期待」
木村忠正
Keynote oral presentation, Japanese, シンポジウム「シリコンフォトニクス」, 電子情報通信学会エレクトロソサイエティ大会, Domestic conference
Sep. 2006

「シリコンフォトニクスに向けた希土類シリケイトErSiO半導体の開発とその発光特性」
木村忠正; 一色秀夫
Invited oral presentation, Japanese, 第107回研究会, 日本学術振興会第145委員会、結晶加工と評価技術
Jul. 2006

「ErSiO超格子単結晶新材料の作製、1.54μm発光特性と高効率LED実現の可能性」
木村忠正; 一色秀夫
Invited oral presentation, Japanese, 2006年度春季大会シンポジウム、シリコン光エミッタ, 応用物理学会
Mar. 2006

Upconversion emission from ErSiO superlattice crystal waveguide
Isshiki, H; Ushiyama, T; Kimura, T
Oral presentation, English, IEEE LEOS
2006

Development of Er-Si-O superlattice-structured semiconducting crystalline compounds towards an efficient silicon photonics active devices operating at 1.54μm，
T.Kimura
Keynote oral presentation, English, ISOT2005, SPIE International Symposium on Optomechatronic Technologies ISOT2005, Sapporo Convention center, Sapporo, Japan，Dec.5-7,2005, Sapporo, Japan, International conference
Dec. 2005

ErSiO self-organized superlattice crystals as a 1.54μm luminescent material
T.Kimura; H.Isshiki
Invited oral presentation, English, LEOS2005, Sydney, Australia, Oct.22-27, 2005, IEEE LEOS, Sydney, Australia, International conference
Oct. 2005

Self-organized formation of Er-Si-O superlattice”
H.Isshiki; T.Kimura; A.Polman
Invited oral presentation, English, MRS Fall Meeting 2004, Nov. 29-Dec. 3, 2004, Boston, USA (Invited paper), MRS/USA, International conference
Nov. 2004

{ゾル-ゲル法により作製した希土類添加ZnO の可視発光(III
上中敦史; 福留隆夫; 一色秀夫; 齋藤理一郎; 湯郷成美; 木村忠正
Oral presentation, Japanese, {第50回応用物理学関係連合講演会 28a-ZA-9},{2003年3月27-30日},{神奈川大学}
Jul. 2003

{Electrically excitable erbium-silicon-oxide nano-complexes by wet-chemical synthesis
H. Isshiki; M.J.A. de Dood; T.Kimura an; A. Polman
Invited oral presentation, English, 2003 MRS Spring Meeting},{April 21-24, 2003},{San Francisco, CA, USA}(invited), International conference
Apr. 2003

Energy transfer and backtransfer mechanisms of Er-doped semiconductors in relation tto the impact and carrier mediated excitation processes
T.Kimura; H. Isshiki
Invited oral presentation, English, Workshop on Impurity Based Electroluminescence in Wide Badgap Semiconductors hosted by A. Steckl and J. Zavada, April 13-16, 2003, Bishop's Lodge, SantaFe, Workshop on Impurity Based Electroluminescence in Wide Badgap Semiconductors hosted by A. Steckl and J. Zavada, April 13-16, 2003, Bishop's Lodge, SantaFe, Santa Fe, USA, International conference
Apr. 2003

{平成14年度 調査研究成果報告書概要: 故障物 理研究委員会信頼性センター}
木村忠正
Others, Japanese, RCJ会報、通巻第 150号(Vol.30、No.1 APR.2003)},{pp.9-10},{日本電子部品
Apr. 2003

Formation and rare earth doping of ZnO films by sol-gel method
T.Kimura; T. Fukudome; A. Kaminaka; T. Murakawa; H. Isshiki
Invited oral presentation, English, APWS(Asian-Pacific Workshop on Widegap Semiconductors) 2003},{9-12 March},{Awaji Yumebutai}\\
Mar. 2003

Er-Si-O 自然超格子の形成とその発光特性
一色秀夫; Albert Polman; 木村忠正
Oral presentation, Japanese, 第50回応用物理学関係連合講演会 30p-ZE-5},{2003年3月27-30日},{神奈川大学}
Mar. 2003

Er-Si-O 自然超格子の作製と構造評価
一色秀夫; 渡辺剛志; Albert Polman; 木村忠正
Oral presentation, Japanese, 第50回応用物理学関係連合講演会 27a-ZC-15{2003年3月27-30日},{神奈川大学}
Mar. 2003

Si/SiO$_2$Er 構造におけるキャリヤと Er$^{3+}$ イオン間の相互作用メカニズム
木村忠正; 一色秀夫
Oral presentation, Japanese, {第50回応用物理学関係連合 講演会 27a-ZC-14},{2003年3月27-30日},{神奈川大学}
Mar. 2003

{ポーラスシリコンを用いたEr-Si-O 光導波路型増幅器の作製(II）
布田将一; 上田啓介; 一色秀夫; 齋藤理一郎; 湯郷成美
Oral presentation, Japanese, 第50回応用物理学関係連合講演会 27a-ZC-16 },{2003年3月27-30日},{神奈川大学}
Mar. 2003

有機 Ge(TMGe) を用いたSiGe 薄膜のMOVPE成長
大竹学; 一色秀夫; 齋藤理一郎; 湯郷成美; 木村忠正
Oral presentation, Japanese, {第50回応用物理学関係連合 講演会29p-ZV-5},{2003年3月27-30日},{神奈川大学}
Mar. 2003

ダイヤモンド/Si 電極における電位の窓の考察\end{enumerate}
田代智成; 小野洋; 木村大輔; 木村忠正; 湯郷成美
Oral presentation, Japanese, 第50回応用物理学関係連合講演会27a-P1-16 {2003年3月27-30日},{神奈川大学}
Mar. 2003

平成14年度故障物理研究委員会成果報告書 「半導体技術 の縮小化限界と信頼性
木村忠正
Others, Japanese, {日本電子部品信頼性センター},{平成 15 年3月}
Mar. 2003

最新VLSI の故障物理
木村 忠正
Others, Japanese, 第 12回 RCJ 信頼性シンポジウム信頼性向上技術セミナ"(企画, 依頼講演)},{2002.11, 日本電子部 品信頼性センター},{ 太田区, 東京}
Nov. 2002

最新VLSI の故障物理,
木村 忠正
Invited oral presentation, Japanese, 第 12回 RCJ 信頼性シンポジウム信頼性向上技術セミナ, 日本電子部品信頼性センター
Nov. 2002

Er-Si-O 混晶からの室温 1.54 μm PL 発光におけるStark 分裂
一色秀 夫; Albert Polman; 木村忠正
Oral presentation, Japanese, 63回応用物理学会学術講演会 24a-ZC-5{2002年9月24-27日},{新潟大学}
Sep. 2002

熱フィラメントCVD方によるEr-Si-O 混晶の作製
渡辺 剛志; 中川 純; 一色秀夫; 齊藤理一郎; 湯郷成美; jtk
Oral presentation, Japanese, 63回応用物理学会学術講演会 24a-ZC-6{2002年9月24-27日},{新潟大学}
Sep. 2002

{ポーラスSiを用いたEr-Si-O 光導波路型増幅器の作製
布田将一; 上田啓介; 一色秀夫; 齊藤理一郎; 湯郷成美; 木村忠正
Oral presentation, Japanese, 63回応用物理学会学術講演会 24a-ZC-7},{2002年9月24-27日},{新潟大学
Sep. 2002

電界印加によるErドープSi中のトラップ準位からのキャリア放出(3
正木克明; 一色秀夫; 湯郷成美; 斎藤理一郎; jtk
Oral presentation, Japanese, 63回応用物理学会学術講演会 {2002年9月24-27日},{新潟大学}
Sep. 2002

{ゾル-ゲル法により作製したZnO へのEr イオン注入とその光学的特性の 評価
福留隆夫; 上中敦; 一色秀夫; 斎藤理一郎; 湯郷成美; 木村忠正
Oral presentation, Japanese, 63回応用物理学会学術講演会{2002年9月24-27日},{新潟大学}
Sep. 2002

有機 Ge(TMGe)を用いた気相成長法によるSi-Ge 系結晶成長
大竹 学; 一色秀夫; 斎藤理一郎; 湯郷成美; 木村忠正
Oral presentation, Japanese, 63回応用物理学会学術講演会 26A-P11-9},{2002年9月24-27日},{新潟大学}
Sep. 2002

{Inhomogeneous absorption around K edge in nanographite and Carbon Nanotubes
A. Grueneis; R. Saito; tk; M. A. Pimenta; A. Jorio, A; G. Souza Filho; G. Dresselhaus; M. S. Dresselhaus
Oral presentation, English, 2002年（平成14年）秋季 日本物理学会},{2002.9.8} {中部大学}
Sep. 2002

Preferential suppression of Auger energy backflow by separation of Er ions from carriers with a thin oxide interlayer in Er-doped porous silicon
T.Kimura; H. Isshiki; T. Ishida; T. Shimizu; S. Ide; R. Saito; S. Yugo
Invited oral presentation, English, International Conference of Luminescence and Related Materials {2002.8.24-29},{Budapest, Hungary}, International conference
Aug. 2002

FINE STRUCTURE IN THE Er-RELATED EMISSION SPECTRA FROM Er-Si-O COMPLEXES AT ROOM TEMPERATURE UNDER CARRIER MEDIATED EXCITATION
Hideo Isshiki; Albert Polman; T.Kimura
Invited oral presentation, English, International Conference on Luminescence and Related Materials},{2002.8.24-29},{Budapest, Hungary}, International conference
Aug. 2002

Er-O complexes doped in silicon photonic crystals by wet-chemical method and the indirect excitation emissions
H. Isshiki; M.J.A. de Dood; A. Polman; T. Kimura
Oral presentation, English, {2001 MRS Fall meeting},{November 26-30, 2001},{Boston, U.S.A.}
Nov. 2001

SiO2:Er/SiO2/Si 構造でのEr1.53 μm フォトルミネッセンス
上中敦史; 福留隆夫; 石田猛; 一色秀夫; 斎藤理一郎; 湯郷成美; 木村忠正
Oral presentation, Japanese, 秋季第62 回応用物理学会学術講演会，愛知工業大学
Sep. 2001

SiO2:Er/SiO2/Si 構造でのEr1.53 μm フォトルミネッセンス
石田猛; 一色秀夫; 斎藤理一郎; 木村忠正
Oral presentation, Japanese, 秋季第62 回応用物理学会学術講演会，愛知工業大学
Sep. 2001

電界印加によるEr ドープSi 中のトラップ準位からのキャリア放出
正木克明; 一色秀夫; 斎藤理一郎; 木村忠正
Oral presentation, Japanese, 秋季第62回応用物理会学術講演会 愛知工業大学
Sep. 2001

1.5μm room temperature emissions from Er-O complexes formed in silicon photonic crystals
H.Isshiki; M.J.A.de Dood; A.Polman; T.Kimura
Oral presentation, English, 20th Electronic Materials Symposium { June 20-22 (2001)},{ Nara}
2001

1.5μm room temperature emissions from Er-O complexes formed in silicon photonic crystals
H.Isshiki; M.J.A.de Dood; A.Polman; T.Kimura
Invited oral presentation, English, 20th Electronic Materials Symposium { June 20-22 (2001)},{ Nara}
2001

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