SHINJI NOZAKI
| Emeritus Professor etc. | Emeritus Professor |
Researcher Information
Degree
Research Keyword
Field Of Study
- Nanotechnology/Materials, Applied physics - general
- Nanotechnology/Materials, Applied materials
- Nanotechnology/Materials, Nanomaterials
- Nanotechnology/Materials, Thin-film surfaces and interfaces
- Nanotechnology/Materials, Inorganic materials
- Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electronic devices and equipment
- Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering
Career
- 30 Jun. 2008 - 26 Aug. 2008
マルセーユCNRS仏国立研究所, 客員教授 - 01 Nov. 2003
University of Electro-Communications, Professor - 01 Apr. 1993 - 31 Oct. 2003
University of Electro-Communications, Associate Professor - Jun. 2002 - Aug. 2002
CRMC2-CNRS National Lab (Marseille, France), Visiting Professor - Oct. 2001
Nanoteco Corporation, Member of Board of Directors - Jun. 2001 - Sep. 2001
CRMC2-CNRS National Lab (Marseille, France), Visiting Professor - Jun. 1999 - Mar. 2000
University of California Berkeley, Visiting Scientist - Jun. 1991 - Apr. 1993
Tokyo Institute of Technology, Visiting Associate Professor - Aug. 1984 - Mar. 1993
Intel Corporation (USA), Senior Process Engineer - Apr. 1989 - May 1991
Tokyo Institute of Technology, Visiting Researcher - Apr. 1988 - Mar. 1989
Nagoya Institute of Technology, Visiting Researcher
Educational Background
Member History
- 01 Dec. 2012 - 30 Nov. 2014
専門委員, 日本学術振興会科学研究費委員会, Government - 01 Apr. 2001 - 31 Mar. 2003
シリコンテクノロジー分科会幹事, 応用物理学会, Society - Oct. 1996 - Sep. 1998
自己組織化プロセス技術調査専門委員会幹事, 電気学会, Society - 1993 - 1998
電子デバイス研究専門委員, 電子情報通信学会, Society - 1993 - 1997
調査専門委員, 電気学会, Society - 1992 - 1995
エレクトロニクス部門和文誌編集委員, 電子情報通信学会, Society
Research Activity Information
Award
Paper
- CdS nanowires formed by chemical synthesis using conjugated single-stranded DNA molecules
S. N. Sarangi; S. N. Sahu; S. Nozaki
Physica E: Low-Dimensional Systems and Nanostructures, Elsevier B.V., 97, -, 64-68, 01 Mar. 2018, Peer-reviwed, CdS nanowires were successfully grown by chemical synthesis using two conjugated single-stranded (ss) DNA molecules, poly G (30) and poly C (30), as templates. During the early stage of the synthesis with the DNA molecules, the Cd 2+ interacts with Poly G and Poly C and produces the (Cd 2+)–Poly GC complex. As the growth proceeds, it results in nanowires. The structural analysis by grazing angle x-ray diffraction and transmission electron microscopy confirmed the zinc-blende CdS nanowires with the growth direction of <
220>
. Although the nanowires are well surface-passivated with the DNA molecules, the photoluminescence quenching was caused by the electron transfer from the nanowires to the DNA molecules. The quenching can be used to detect and label the DNAs.
Scientific journal, English - Deep level characterization improved by Laplace charge transient spectroscopy
Shumpei Koike; Kazuo Uchida; Shinji Nozaki
International Journal of Engineering and Applied Sciences, 5, 2, 66-69, Feb. 2018, Peer-reviwed
Scientific journal, English - Electron beam irradiation effect on the mechanical properties of nanosilica-filled polyurethane films
Fei Dong; Suraj Maganty; Stephan J. Meschter; Shinji Nozaki; Takeshi Ohshima; Takahiro Makino; Junghyun Cho
POLYMER DEGRADATION AND STABILITY, ELSEVIER SCI LTD, 141, -, 45-53, Jul. 2017, Peer-reviwed, Polyurethane (PU) is a good candidate to be used as conformal coatings for space electronic components and boards due to its manufacturability and desirable mechanical properties. It also keeps tin whiskers from growing on the tin-rich surfaces under a long-term usage that will ultimately result in electrical failure. PU coating can, however, be susceptible to the irradiation damage in space environment that ultimately alters its chemical structure and mechanical behavior. In this study, four variations of PU-based coatings (PU filled with and without nanosilica particles; polyurethane acrylate (PUA) filled with and without nanosilica particles) were investigated to understand the irradiation damage on chemical structure and the corresponding mechanical properties under three electron beam irradiation fluences (1 x 10(14) cm(-2), 1 x 10(15) cm(-2), 1 x 10(16) cm(-2)). Infrared spectroscopy was used to examine the degradation of chemical bonding with irradiation. Microphase separation, the degree of curing, and molecule chain mobility were examined via differential scanning calorimetry (DSC) by monitoring the shift in glass transition temperatures after the irradiation. The electron beam irradiation on PU films resulted in the quinone structure formation whereas, on PUA film, microphase separation increased, thereby making both films stronger and stiffer, but less ductile and more brittle. As a result, PU and PUA coatings under a high fluence of irradiation will be more prone to tin whisker penetration. This study also shows the potential effect of nanosilica on retarding the irradiation damage in PU and PUA films. (C) 2017 Elsevier Ltd. All rights reserved.
Scientific journal, English - Development of laser lift-off process with a GaN/Al0.7Ga0.3N strained-layer superlattice for vertical UVC LED fabrication
David Doan; Shinji Nozaki; Kazuo Uchida
International Journal of Engineering and Applied Sciences, 4, 4, 51-56, 01 Apr. 2017, Peer-reviwed
Scientific journal, English - ZnO-nanorods: A Possible White LED Phosphor
Sachindra Nath Sarangi; T. Arun; Dinseh K. Ray; Pratap Kumar Sahoo; Shinji Nozaki; Noriyuki Sugiyama; Kazuo Uchida
61ST DAE-SOLID STATE PHYSICS SYMPOSIUM, AMER INST PHYSICS, 1832, 060022, 060022-1-060022-3, 2017, Peer-reviwed, The white light-emitting diodes (LEDs) have drawn much attention to replace conventional lighting sources because of low energy consumption, high light efficiency and long lifetime. Although the most common approach to produce white light is to combine a hlue LED chip and a yellow phosphor, such a white LED cannot be used for a general lighting application, which requires a hroad luminescence spectrum in the visible wavelength range. We have successfully chemically synthesized the ZnO nanorods showing intense broad luminescence in the visible wavelength range and made a white LED using the ZnO nanorods as phosphor excited with a blue LED. Their lengths and diameters were 2-10 and 200-800 nm, respectively. The wurtzite structure was confirmed by the x-ray diffraction measurement. The PL spectrum obtained by exciting the ZnO nanorods with the He-Cd laser has two peaks, one associated with the near band-edge recombination and the other with recombination via defects. The peak intensity of the near band-edge luminescence at 388 nm is much weaker than that of the defect-related luminescence. The latter luminescence peak ranges from 450 to 850 nm and broad enough to be used as a phosphor for a white LED. A white LED has been fabricated using a blue LED with 450 nm emission and ZnO nanorod powders. The LED performances show a white light emission and the electroluminescence measurement shows a stiff increase in white light intensity with increasing blue LED current. The Commission International del 'Eclairage (CIE) chromaticity colour coordinates of 450 nm LED pumped white emission shows a coordinate of (0.31, 0.32) for white LED at 350 mA. These results indicate that ZnO nanorods provides an altemate and effective approach to achieve high-performance white LEDs and also other optoelectronic devices.
International conference proceedings, English - ZnO-nanorods: A Possible White LED Phosphor
Sachindra Nath Sarangi; T. Arun; Dinseh K. Ray; Pratap Kumar Sahoo; Shinji Nozaki; Noriyuki Sugiyama; Kazuo Uchida
61ST DAE-SOLID STATE PHYSICS SYMPOSIUM, AMER INST PHYSICS, 1832, -, 060022-1-060022-3, 2017, Peer-reviwed, The white light-emitting diodes (LEDs) have drawn much attention to replace conventional lighting sources because of low energy consumption, high light efficiency and long lifetime. Although the most common approach to produce white light is to combine a hlue LED chip and a yellow phosphor, such a white LED cannot be used for a general lighting application, which requires a hroad luminescence spectrum in the visible wavelength range. We have successfully chemically synthesized the ZnO nanorods showing intense broad luminescence in the visible wavelength range and made a white LED using the ZnO nanorods as phosphor excited with a blue LED. Their lengths and diameters were 2-10 and 200-800 nm, respectively. The wurtzite structure was confirmed by the x-ray diffraction measurement. The PL spectrum obtained by exciting the ZnO nanorods with the He-Cd laser has two peaks, one associated with the near band-edge recombination and the other with recombination via defects. The peak intensity of the near band-edge luminescence at 388 nm is much weaker than that of the defect-related luminescence. The latter luminescence peak ranges from 450 to 850 nm and broad enough to be used as a phosphor for a white LED. A white LED has been fabricated using a blue LED with 450 nm emission and ZnO nanorod powders. The LED performances show a white light emission and the electroluminescence measurement shows a stiff increase in white light intensity with increasing blue LED current. The Commission International del 'Eclairage (CIE) chromaticity colour coordinates of 450 nm LED pumped white emission shows a coordinate of (0.31, 0.32) for white LED at 350 mA. These results indicate that ZnO nanorods provides an altemate and effective approach to achieve high-performance white LEDs and also other optoelectronic devices.
International conference proceedings, English - Growth mechanism of single-crystalline NiO thin films grown by metal organic chemical vapor
Teuku Muhammad Roffi; Shinji Nozaki; Kazuo Uchida
JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 451, -, 57-64, Oct. 2016, Peer-reviwed, Nickel oxide (NiO) thin films were grown by atmospheric-pressure metal organic chemical vapor deposition (APMOCVD). Growth was carried out using various growth parameters, including the growth temperature, the input precursor (O-2/Ni) ratio, and the type of substrate material. Effects of the growth parameters on the structural and electrical properties of the films were investigated. X-ray diffraction analysis revealed that the crystal structure and quality were strongly affected by the growth temperature and the type of substrate material. At an optimized growth temperature, single-crystalline NiO films were grown on MgO(100) and MgO(111) substrates in a cube-on-cube orientation relationship, while on an Al2O3(001) substrate, the film was grown in the NiO[111] direction. The use of MgO substrates successfully suppressed the formation of twin defects, which have been frequently reported in the growth of NiO. The difference in the formation of the twin defects on MgO and Al2O3 substrates was discussed. It was observed that the resistivity dependence on crystal quality was affected by the choice of substrate material. The effects of the precursor ratio on the transmittance and resistivity of the films were also investigated. Improved transparency in the visible wavelength region and higher conductivity were found in films grown with higher O-2/Ni ratios. (C) 2016 Elsevier B.V. All rights reserved.
Scientific journal, English - InGaP/GaAs heterojunction photosensor powered by an on-chip GaAs solar cell for energy harvesting
Phuc Hong Than; Kazuo Uchida; Takahiro Makino; Takeshi Ohshima; Shinji Nozaki
JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, 55, 4, 04ES09-1-04ES09-6, Apr. 2016, Peer-reviwed, In this study, an InGaP/GaAs heterojunction phototransistor (HPT) and a GaAs solar cell were monolithically integrated into an HPT epitaxial wafer, and the battery-free operation of the HPT was demonstrated for energy harvesting. Although the thickness and doping condition of the layers were optimized for the HPT performance, but not for the solar cell performance, the obtained short-circuit current was high enough to operate the InGaP/GaAs HPT in a two-terminal (2T) configuration. A collector photocurrent of 0.63 mA was obtained when the energy-harvesting InGaP/GaAs 2T-HPT was exposed to white light with a power density of 35mW/cm(2), and it linearly increased with the power density. For a potential application of the energy-harvesting InGaP/GaAs HPT as a photosensor in space, the device was irradiated with electrons of 1 MeV energy and 10(15)cm(-2) fluence. No significant degradation of the fabricated energy-harvesting 2T-HPT after the high-energy electron irradiation guarantees its battery-free operation in space. (C) 2016 The Japan Society of Applied Physics
Scientific journal, English - Effects of electrical stress on the InGaP/GaAs heterojunction phototransistors
Phuc Hong Than; Kazuo Uchida; Shinji Nozaki
IEEE Transactions on Device and Materials Reliability, IEEE, 15, 4, 1-6, Dec. 2015, Peer-reviwed
Scientific journal, English - Low-temperature formation of high-quality gate oxide by ultraviolet irradiation on spin-on-glass
R. Usuda; K. Uchida; S. Nozaki
APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 107, 18, 182903-1-182903-4, Nov. 2015, Peer-reviwed, Although a UV cure was found to effectively convert a perhydropolysilazane (PHPS) spin-on-glass film into a dense SiOx film at low temperature, the electrical characteristics were never reported in order to recommend the use of PHPS as a gate-oxide material that can be formed at low temperature. We have formed a high-quality gate oxide by UV irradiation on the PHPS film, and obtained an interface midgap trap density of 3.4 x 10(11) cm(-2) eV(-1) by the UV wet oxidation and UV post-metallization annealing (PMA), at a temperature as low as 160 degrees C. In contrast to the UV irradiation using short-wavelength UV light, which is well known to enhance oxidation by the production of the excited states of oxygen, the UV irradiation was carried out using longer-wavelength UV light from a metal halide lamp. The UV irradiation during the wet oxidation of the PHPS film generates electron-hole pairs. The electrons ionize the H2O molecules and facilitate dissociation of the molecules into H and OH-. The OH- ions are highly reactive with Si and improve the stoichiometry of the oxide. The UV irradiation during the PMA excites the electrons from the accumulation layer, and the built-in electric field makes the electron injection into the oxide much easier. The electrons injected into the oxide recombine with the trapped holes, which have caused a large negative flat band voltage shift after the UV wet oxidation, and also ionize the H2O molecules. The ionization results in the electron stimulated dissociation of H2O molecules and the decreased interface trap density. (C) 2015 AIP Publishing LLC.
Scientific journal, English - Spectroscopic ellipsometry study of the free-carrier and band-edge absorption in ZnO thin films: Effect of non-stoichiometry
Chaman Singh; Shinji Nozaki; Shyama Rath
JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 118, 19, 195305-1-195305-9, Nov. 2015, Peer-reviwed, The effect of stoichiometry on the complex dielectric function (epsilon(E) = epsilon(1)(E) broken vertical bar i epsilon(2)(E)), and thereby on the optical and electrical properties, of rf-sputtered polycrystalline ZnO films was investigated using spectroscopic ellipsometry in the UV-VIS-NIR range. The stoichiometry and the density of the films were quantified by Rutherford backscattering spectroscopy. The lineshape of the dielectric function was fitted using the Tauc-Lorentz multi-oscillator and Drude models. The stoichiometric as well as the sub-stoichiometric films showed a high optical transparency in the visible and a bandgap absorption in the UV region. In the NIR region, however, the sub-stoichiometric films showed a significant increase in absorption with decreasing energy while the absorption was negligible for the stoichiometric films. This difference in behavior is attributed to the presence of free-carriers in the sub-stoichiometric films, whose concentration was determined to be around 4 x 10(20) cm(-3) from spectroscopic ellipsometry. The high carrier concentration induced by non-stoichiometry is also manifested in a larger value of the optical bandgap. This study shows the power of spectroscopic ellipsometry for the simultaneous determination of the electrical and optical properties of ZnO films and is applicable for a wide range of film thickness. (C) 2015 AIP Publishing LLC.
Scientific journal, English - Visible-blind ultraviolet photodiode fabricated by UVoxidation of metallic zinc on p-Si
Dongyuan Zhang; Kazuo Uchida; Shinji Nozaki
JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 118, 9, 094502-1-094502-8, Sep. 2015, Peer-reviwed, A UV photodiode fabricated by the UV oxidation of a metallic zinc thin film on p-Si has manifested unique photoresponse characteristics. The electron concentration found by the Hall measurement was 3 x 10(16) cm(-3), and such a low electron concentration resulted in a low visible photoluminescence. UV illumination enhances the oxidation at low temperatures and decreases the concentration of the oxygen vacancies. The I-V characteristic showed a good rectification with a four-order magnitude difference in the forward and reverse currents at 2V, and its linear and frequency independent C-2-V characteristic confirmed an abrupt pn junction. The photoresponse showed a visible blindness with a responsivity ratio of UV and visible light as high as 100. Such a visible-blind photoresponse was attributed to the optimum thickness of the SiO2 formed on the Si surface during the UV oxidation at 400 degrees C. A lower potential barrier to holes at the ZnO/SiO2 interface facilitates Fowler-Nordheim tunneling of the photo-generated holes during the UV illumination, while a higher potential barrier to electrons efficiently blocks transport of the photo-generated electrons to the ZnO during the visible light illumination. The presence of oxide resulted in a slow photoresponse to the turn-on and off of the UV light. A detailed analysis is presented to understand how the photo-generated carriers contribute step by step to the photocurrent. In addition to the slow photoresponse associated with the SiO2 interfacial layer, the decay of the photocurrent was found extremely slow after turn-off of the UV light. Such a slow decay of the photocurrent is referred to as a persistent photoconductivity, which is caused by metastable deep levels. It is hypothesized that Zn vacancies form such a deep level, and that the photo-generated electrons need to overcome a thermal-energy barrier for capture. The ZnO film by the UV oxidation at 400 degrees C was found to be rich in oxygen and deficient in zinc. (C) 2015 AIP Publishing LLC.
Scientific journal, English - ZnO Nanorod-Based Non-Enzymatic Optical Glucose Biosensor
Sachindra Nath Sarangi; Shinji Nozaki; Surendra Nath Sahu
JOURNAL OF BIOMEDICAL NANOTECHNOLOGY, AMER SCIENTIFIC PUBLISHERS, 11, 6, 988-996, Jun. 2015, Peer-reviwed, The highly sensitive, interference-free and non-enzymatic optical sensing of glucose has been made possible for the first time using the hydrothermally synthesized ZnO nanorods. The UV irradiation of glucose- treated ZnO nanorods decomposes glucose into hydrogen peroxide (H2O2) and gluconic acid by UV oxidation. The ZnO nanorods play the role of a catalyst similar to the oxidase used in the enzymatic glucose sensors. The photoluminescence (PL) intensity of the nearband edge emission of the ZnO nanorods linearly decreased with the increased concentration of H2O2. Therefore, the glucose concentration is monitored over the wide range of 0.5-30 m mu, corresponding to 9-540 mg/dL. The concentration range of the linear region in the calibration curve is suitable for its clinical use as a glucose sensor, because the glucose concentration of human serum is typically in the range of 80-120 mg/dL. In addition, the optical glucose sensor made of the ZnO nanorods is free from interference by bovin serum albumin, ascorbic acid or uric acid, which are also present in human blood. The non-enzymatic ZnO-nanorod sensor has been demonstrated with human serum samples from both normal persons and diabetic patients. There is a good agreement between the glucose concentrations measured by the PL quenching and standard clinical methods.
Scientific journal, English - Structural, electrical, and optical properties of CoxNi1-xO films grown by metalorganic chemical vapor deposition
Teuku Muhammad Roffi; Kazuo Uchida; Shinji Nozaki
JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 414, -, 123-129, Mar. 2015, Peer-reviwed, Thin films of cobalt nickel oxide (CoxNi1-xO, x=0.01, 0.02, 0.08, 0.17, 022, 0.35, 0.56, 0.72) were grown on Al2O3 substrate by atmospheric pressure metalorganic chemical vapor deposition (APMOCVD). The effect of the cobalt composition on the structural, morphological, optical, and electrical properties of the films was investigated. X-ray diffraction (XRD) analysis revealed that all of the films grew with a preferred orientation towards [1 1 1](Nio) and a twinned structure. Cobalt was well dispersed in the NiO structure up to x=0.08. Co alloys were formed from x=0.17 to x=0.22, while phase-separated NiO and CoxNi1-xO formed when x > 0.35. The bandgap of the CoxNi1-xO film was found to decrease with increasing cobalt composition. Four-point probe measurements showed that the resistivity of the film also decreased with increasing cobalt composition, reaching a minimum of 0.006 Omega cm. Hall measurements of the films revealed n-type conductivity. The correlation between the presence of cobalt in different ionization states and the observed decrease in resistivity as well as the type of conductivity in CoxNi1-xO is discussed. (C) 2015 Elsevier B.V. All rights reserved.
Scientific journal, English - Raman modes, dipole moment and chirality in periodically positioned Au-8 clusters
A. Pradhani; O. Halder; S. Nozaki; S. Rath
RSC ADVANCES, ROYAL SOC CHEMISTRY, 5, 80, 65208-65213, 2015, Peer-reviwed, This study reports the solution-based assembly of hexagonal + 1 shaped Aus clusters surrounded by six ligands into a local periodic structure ([PS) of periodicity 1.47 nm, which was confirmed by experimental and theoretical Raman scattering analyses as well as transmission electron microscopy, X-ray diffraction and small angle X-ray scattering measurements. The enhancement of the net electric dipole moment to 21.17 Debye is due to the rearrangement of the charge distribution in the electronic states of the [PS. This results in exciton-exciton coupling through dipole interactions, which was evidenced by the splitting of the excitonic states in the circular dichroism (CD) spectra. The strong negativity of the CD index at the longer wavelength confirms the negative chirality of the LPS-Au-8(.)
Scientific journal, English - Effects of Electrical Stress and High-Energy Electron Irradiation on the InGaP/GaAs Heterojunction Phototransistor
Phuc Hong Than; Kazuo Uchida; Takahiro Makino; Takeshi Ohshima; Shinji Nozaki
Mat. Res. Soc. Symp. Proc., Cambridge Journals, 1792, -, DOI:10.1557/opl.2015.403--, 2015, Peer-reviwed
International conference proceedings, English - NiO/Si heterostructures formed by UV oxidation of nickel deposited on Si substrates
Dongyuan Zhang; Shinji Nozaki; Kazuo Uchida
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, A V S AMER INST PHYSICS, 32, 3, 0131202-1-0131202-6, May 2014, Peer-reviwed, Nickel oxide (NiO) is one of few metal-oxide semiconductors showing a p-type conductivity and can be combined with an n-type semiconductor to fabricate a pn diode. In this study, isotype and anisotype heterojunction diodes were fabricated by ultraviolet (UV) oxidation at 350 degrees C of metallic Ni deposited on p- and n-Si substrates. The I-V characteristics of the NiO/p-Si diode do not show rectification, while those of the NiO/n-Si diode show rectification with a difference of two orders of magnitude between the currents at 2 and -2V. The linear C-2-V characteristics of the NiO/n-Si and secondary ion mass spectroscopy profile confirm that the UV oxidation temperature is low enough so as not to affect deep inside the Si. The NiO layers formed by the oxidation of Ni under UV illumination are found to be more conductive and more suitable for the diode fabrication than those by the thermal oxidation of Ni without UV illumination at the same temperature. Because the oxidation temperature is relatively low and can be further reduced, the UV oxidation can become an important process technology to form various metal-oxide semiconductors from printed metals for future printed flexible electronics. (C) 2014 American Vacuum Society.
Scientific journal, English - High-quality gate oxide formed at 150 °c for flexible electronics
Yasuhiro Iijima; Ryo Usuda; Kazuo Uchida; Shinji Nozaki
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 53, 8, 08LC05-1-08LC05-5, 2014, Peer-reviwed, This study describes the low temperature process to form the gate oxide of MOSFETs using a SiO nano-powder and post UV oxidation. The highquality SiO 2 gate oxide was successfully formed on a silicon substrate by vacuum evaporation of the SiO nano-powder followed by the post UV oxidation in steam at 200 °C. However, further lowering of the oxidation temperature to 150 °C degraded the insulating property and increased the interface trap density. In order to improve the SiO2/Si interface quality, the Si surface was irradiated by vacuum UV (VUV) using a Xe excimer lamp before evaporation of the SiO nano-powder. This substrate treatment has substantially improved the SiO2/Si interface quality. The physical mechanisms of the VUV and UV oxidation are discussed in order to understand the low-temperature formation of the SiO2. © 2014 The Japan Society of Applied Physics.
International conference proceedings, English - Hydrothermal growth of zinc oxide nanorods and glucose-sensor application
Shinji Nozaki; Sachindra N. Sarangi; Kazuo Uchida; Surendra Sahu
Soft Nanoscience Letters, 3, -, 23-26, Dec. 2013, Peer-reviwed
Scientific journal, English - Temperature Dependence of the InGaP/GaAs Heterojunction Phototransitor
Phuc Hong THAN; Yasushi TAKAKI; Kazuo UCHIDA; Shinji NOZAKI
電子情報通信学会論文誌 C, The Institute of Electronics, Information and Communication Engineers, J96-C, 9, 238-244, Sep. 2013, Peer-reviwed, InGaP/GaAsヘテロ接合バイポーラトランジスタ(HBT)の温度特性はこれまで多く調べられ,報告されているが,InGaP/GaAsヘテロ接合フォトトランジスタ(HPT)の温度特性についてはほとんど報告例がない.本研究では,白色光に対する光応答の高感度検出への応用を目的に,InGaP/GaAs HPTを作製し,300〜400Kの温度範囲でInGaP/GaAs HPTの電流利得β及び受光感度Sを測定した.その結果,電流利得βは温度とともに減少し,受光感度Sは320Kまで増加するがその後は減少した.これらの実験結果は,HPTの三端子等価回路により説明された.また,HBTにおいて露出した高濃度GaAsベース表面でのキャリヤの再結合を抑制し,電流利得を高めるエミッタレッジパッシベーションのHPTにおける効果も検証した.エミッタレッジパッシベーションは,HPTにおいても全ての測定温度で高い電流利得β及び受光感度Sを維持するのに有効であった.特にエミッタレッジパッシベーションは,HBT以上にHPTの高性能化に貢献することが明らかとなった.
Scientific journal, Japanese - Effects of radiation-induced defects on the charge collection efficiency of a silicon carbide particle detector
Naoya Iwamoto; Shinobu Onoda; Takeshi Ohshima; Shinji Nozaki; Kazutoshi Kojima
Proceeding of SPIE, 8725, -, 87252G-1 – 87252G-8, Jul. 2013, Peer-reviwed
International conference proceedings, English - Highly p-typed superlattices consist of undoped InAs and carbon-doped GaAs layers
Kazuo Uchida; Heisuke Kanaya; Hiroshi Imanishi; Atsushi Koizumi; Shinji Nozaki
Journal of Crystal Growth, 370, -, 197-199, Apr. 2013, Peer-reviwed
Scientific journal, English - Characterization of order/disordered GaInP/GaAs heterointerface by the quantum hall effect
Kazuo Uchida; Kiwamu Satoh; Keita Asano; Atsushi Koizumi; Shinji Nozaki
Journal of Crystal Growth, 370, -, 136-140, Apr. 2013, Peer-reviwed
Scientific journal, English - Selective growth of ZnO nanorods by the hydrothermal technique
Shinji Nozaki; Sachin N. Sarangi; Surendra N. Sahu; Kazuo Uchida
Advances Natural Sciences: Nanoscience and Nanotechnology, 4, 015008 (4pp), Jan. 2013, Peer-reviwed
Scientific journal, English - E-1/E-2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy
A. Koizumi; V. P. Markevich; N. Iwamoto; S. Sasaki; T. Ohshima; K. Kojima; T. Kimoto; K. Uchida; S. Nozaki; B. Hamilton; A. R. Peaker
APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 102, 3, 032104-1 – 032104-4, Jan. 2013, Peer-reviwed, Electrically active defects in n-type 6H-SiC diode structures have been studied by deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS. It is shown that the commonly observed broadened DLTS peak previously ascribed to two traps referenced as E-1/E-2 has three components with activation energies for electron emission of 0.39, 0.43, and 0.44 eV. Further, defects associated with these emission signals have similar electronic structure, each possessing two energy levels with negative-U ordering in the upper half of the 6H-SiC gap. It is argued that the defects are related to a carbon vacancy at three non-equivalent lattice sites in 6H-SiC. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4788814]
Scientific journal, English - Intense ultraviolet photoluminescence observed at room temperature from NiO nanoporous thin films grown by the hydrothermal technique,
Sachindra Nath Sarangi; Dongyuan Zhang; Kumar Sahoo; Kazuo Uchida Surendra Nath Sahu; Shinji Nozaki
Mat. Res. Soc. Symp. Proc., 1494, -, DOI: 10.1557/0pl.2012.1699, 2013, Peer-reviwed
International conference proceedings, English - Fabrication of a p-NiO/n-Si heterojunction diode by UV oxidation of Ni deposited on n-Si
Dongyuan Zhang; Kazuo Uchida; Shinji Nozaki
Mat. Res. Soc. Symp. Proc., 1494, -, DOI: 10.1557/0pl.2013.520, 2013, Peer-reviwed
International conference proceedings, English - Effect of O2/Ni ratio on structure and surface morphology of atmospheric pressure MOCVD grown NiO thin films
Teuku M. Roffi; Motohiko Nakamura; Kazuo Uchida; Shinji Nozaki
Mat. Res. Soc. Symp. Proc., 1577, -, DOI: 10.1557/0pl.2013.651, 2013, Peer-reviwed
International conference proceedings, English - High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy
Kazuo Uchida; Ken-ichi Yoshida; Dongyuan Zhang; Atsushi Koizumi; Shinji Nozaki
AIP ADVANCES, 2, 042154-1 – 042154-5, Nov. 2012, Peer-reviwed
Scientific journal, English - Microstructure developments of F-doped SiO2 thin films prepared by liquid phase deposition
Shijun Yu; Jae Sung Lee; Shinji Nozaki; Junghyun Cho
THIN SOLID FILMS, ELSEVIER SCIENCE SA, 520, 6, 1718-1723, Jan. 2012, Peer-reviwed, This study presents a systematic investigation of the microstructure dependence of liquid phase deposition (LPD) of SiO2 films on solution parameters and deposition temperature. The corresponding deposition rate and film roughness were also evaluated under various deposition conditions. Smooth and sufficiently dense SiO2 films, which are the prerequisite for reliable low-k dielectric applications, were deposited on both silicon and fluorine-doped tin oxide coated glass substrates from supersaturated hydrofluorosilicic acid (H2SiF6) solution with the addition of boric acid (H3BO3). It is shown that H2SiF6 acid controls the surface morphology and grain structure through surface reaction while H3BO3 acid prompts bulk precipitation in solution. For the 208-nm thick SiO2 film, the breakdown field exceeded 1.9 MV/cm and the leakage current density was on the order of 10(-9) A/cm(2) at 4 V. indicating excellent insulating properties of LPD SiO2 films. The strong presence of Si-O-Si and some Si-F with little Si-OH bond as shown in FT-IR spectra indicate that the LPD SiO2 films have mostly a silica network with some fluorine (F) content. F-doping was self-incorporated into the silica films from the H2SiF6 solution during deposition process. (c) 2011 Elsevier B.V. All rights reserved.
Scientific journal, English - Defects in an electron-irradiated 6H-SiC diode studied by alpha particle induced charge transient spectroscopy: Their impact on the degraded charge collection efficiency
N. Iwamoto; A. Koizumi; S. Onoda; T. Makino; T. Ohshima; K. Kojima; S. Koike; K. Uchida; S. Nozaki
Materials Science Forum, 717 - 720, 267-270, 2012, Peer-reviwed
International conference proceedings, English - Peak degradation of heavily-ion induced transient currents in 6H-SiC MOS capacitors
T. Makino; N. Iwamoto; S. Onoda; T. Ohshima; K. Kojima; S. Nozaki
Materials Science Forum, 717-720, 469-472, 2012, Peer-reviwed
International conference proceedings, English - Single-Alpha-Particle-Induced Charge Transient Spectroscopy of the 6H-SiC p(+)n Diode Irradiated With High-Energy Electrons
Naoya Iwamoto; Atsushi Koizumi; Shinobu Onoda; Takahiro Makino; Takeshi Ohshima; Kazutoshi Kojima; Shunpei Koike; Kazuo Uchida; Shinji Nozaki
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 58, 6, 3328-3332, Dec. 2011, Peer-reviwed, The defects formed in a 6H-SiC p(+)n diode by irradiation with 1 MeV electrons have been studied by both single-alpha-particle-induced charge transient spectroscopy and conventional deep level transient spectroscopy (DLTS). The charge collection efficiency was significantly degraded by the electron irradiation. A radiation-induced defect (X) was observed by charge transient spectroscopy. We assign this defect to the electron trap Ei already known in literature and observed by us with DLTS, as its activation energy, 0.50 eV, and annealing behavior, are similar. Moreover, as peaks related to X/Ei disappear after annealing at 250 degrees C and charge collection efficiency also significantly recover after annealing at 250 degrees C, we conclude that this defect is mainly responsible for the decreased charge collection efficiency.
Scientific journal, English - Improvement of high-power-white-LED lamp performance by liquid injection
T. M. Roffi; I. Idris; K. Uchida; S. Nozaki; N. Sugiyama; H. Morisaki; F. X; N. Soelami
Proceedings of the 2011 International Conference of Electrical Engineering and Informatics, IEEE Catalog Number, CFP1177H-CDR, F2-4, Jul. 2011, Peer-reviwed
International conference proceedings, English - Transient Analysis of an Extended Drift Region in a 6H-SiC Diode Formed by a Single Alpha Particle Strike and Its Contribution to the Increased Charge Collection
N. Iwamoto; S. Onoda; T. Makino; T. Ohshima; K. Kojima; A. Koizumi; K. Uchida; S. Nozaki
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 58, 1, 305-313, Feb. 2011, Peer-reviwed, Charge collection of a 6H-SiC p(+)n diode has been studied. The collected charges of the diode are measured using a single alpha particle strike at various reverse bias voltages, then analyzed using both the low-injection charge collection model and the DESSIS device simulator. It is found that the total collected charges at lower bias voltages cannot be well understood based on the low-injection model. In distinct contrast, the device simulator successfully predicts the total collected charges at all voltages including the lower ones. The transient analysis of carrier and electric field distributions after the strike shows insignificant collapse of the original depletion region and time-dependent extension of the electric field beyond the original depletion region. A new physics is proposed to explain slower rearrangement of carriers, compared to Si devices, and formation of an extended drift region in the 6H-SiC diode based on the results of the transient analysis.
Scientific journal, English - In situ CBrCl_3_ etching to control size and density of InAs/GaAs quantum dots
Atsushi Koizumi; Hiroshi Imanishi; Kazuo Uchida; Shinji Nozaki
Journal of Crystal Growth, 315, 1, 106 – 109, Jan. 2011, Peer-reviwed
Scientific journal, English - Compensation-dependent carrier transport of Al-doped p-type 4H-SiC
Atsushi Koizumi; Naoya Iwamoto; Shinobu Onoda; Takeshi Ohshima; Tsunenobu Kimoto; Kazuo Uchida; Shinji Nozaki
Materials Science Forum, 679 - 680, 201-204, 2011, Peer-reviwed
International conference proceedings, English - Oxygen ion induced charge in SiC MOS capacitors irradiated with gamma-rays
Takeshi Ohshima; Naoya Iwamoto; Shinobu Onoda; Takahiro Makino; Shinji Nozaki; Kazutoshi
Materials Science Forum, 679 - 680, 362-365, 2011, Peer-reviwed
International conference proceedings, English - Refreshable decrease in peak height of ion beam induced transient current from silicon carbide metal-oxide-semiconductor capacitors
T. Ohshima; N. Iwamoto; S. Onoda; T. Makino; M. Deki; S. Nozaki
Proceedings of the 21nd International Conference on the Application of Accelerators in Research and Industry (AIP Conference Proceedings), 1336, -, 660 – 664, 2011, Peer-reviwed
International conference proceedings, English - Charge Enhancement Effects in 6H-SiC MOSFETs Induced by Heavy Ion Strike
Shinobu Onoda; Takahiro Makino; Naoya Iwamoto; Gyorgy Vizkelethy; Kazutoshi Kojima; Shinji Nozaki; Takeshi Ohshima
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 57, 6, 3373-3379, Dec. 2010, Peer-reviwed, The transient response of Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with three different gates due to a single ion strike is studied. Comparing the experiment and numerical simulation, it is suggested that the charge enhancement is due to the bipolar effect. We find the bipolar gain depends on the quality of gate oxide. The impact of fixed charge in SiO2 and interface traps at SiC/SiO2 on the charge collection is discussed.
Scientific journal, English - Aqueous-based synthesis of atomic gold clusters: Geometry and optical properties
S. Rath; S. Nozaki; D. Palagin; V. Matulis; O. Ivashkevich; S. Maki
Applied Physics Letters, 97, 05310 -1 – 053103-3, Aug. 2010, Peer-reviwed
Scientific journal, English - DNA template driven CdSe nanowires and nanoparticles: Structure and optical properties
S. N. Sarangi; S. Rath; K. Goswami; S. Nozaki; S. N. Sahu
Physica E, 42, 1670 – 1674, Jan. 2010
Scientific journal, English - Charge collection efficiency of 6H-SiC P+N diodes degraded by low-energy electron irradiation
N. Iwamoto; S. Onoda; T. Ohshima; K. Kojima; A. Koizumi; K. Uchida; S. Nozaki
Materials Science Forum, 645 - 648, 921-924, 2010, Peer-reviwed
International conference proceedings, English - Comparative study on reliability of InP/InGaAs heterojunction bipolar transistors with highly Zn- and C-doped base layers
Atsushi Koizumi; Kazuki Oshitanai; Jaesung Lee; Kazuo Uchida; Shinji Nozaki
MRS Proceedings 2009, 1195, B06, 02, 2010, Peer-reviwed
International conference proceedings, English - Characterization of MOVPE-grown p-InGaAs/n-InP interfaces
Kazuo Uchida; Hidenori Yamato; Yoshikuni Tomioka; Atsushi Koizumi; Shinji Nozaki
Journal of Crystal Growth, 311, 4011 – 4015, Jul. 2009, Peer-reviwed
Scientific journal, English - InGaP/GaAs heterointerfaces studied by cross-sectional scanning tunneling microscopy and their impact on the device characteristics
S. Nozaki; A. Koizumi; K. Uchida; H. Ono
Proceedings of the International Conference Nanomeeting-2009: Physics, Chemistry and Application of Nanostructures, 18-23, May 2009
International conference proceedings, English - Enhancement of the visible luminescence from the ZnO nanocrystals by Li and Al co-doping
J. Nayak; S. Kimura; S. Nozaki
JOURNAL OF LUMINESCENCE, ELSEVIER SCIENCE BV, 129, 1, 12-16, Jan. 2009, Peer-reviwed, Nanocrystals of ZnO, doped with aluminum and lithium, were synthesized by chemical co-precipitation from an aqueous solution mixture of Zn(NO)(3), AlCl3 and LiCl. With an aim to produce strong white luminescence, the intensity of the visible luminescence was tailored as a function of dopant concentration. We observed a significant enhancement of the yellowish-white photoluminescence from ZnO nanocrystals due to co-doping with aluminum and lithium. The luminescence intensity increases and the peak position shifts to lower wavelength with increase in the dopant concentration. Although the exact mechanism of the enhancement of the luminescence could not be established, still a possible shallow donor-to-deep acceptor recombination was proposed. (C) 2008 Elsevier B.V. All rights reserved.
Scientific journal, English - Detection of low-density Ge nanoparticles using surface-enhanced Raman spectroscopy
Shyama Rath; Somaditya Sen; Shinji Nozaki; Masahide Tona; Shunsuke Ohtani; K. P. Jain
Advanced Science Letters, 2, 3, 377 – 380, 2009, Peer-reviwed
Scientific journal, English - High-quality oxide formed by evaporation of SiO nanopowder: Application to MOSFET’s on plastic substrates and GaN epilayers
S. Nozaki; S. Kimura; A. Koizumi; H. Ono; K. Uchida
Materials Science in Semiconductor Processing, 11, 384-389, 2009, Peer-reviwed
Scientific journal, English - High-quality oxide formed by evaporation of SiO nanopowder: Application to MOSFET’s on plastic substrates and GaN epilayers
S. Nozaki; S. Kimura; A. Koizumi; H. Ono; K. Uchida
Materials Science in Semiconductor Processing, 11, 384 – 389, 2009, Peer-reviwed
Scientific journal, English - Photoluminescence of Si nanocrystals formed by the photosynthesis
S. Nozaki; C. Y. Chen; S. Kimura; H. Ono; K. Uchida
THIN SOLID FILMS, ELSEVIER SCIENCE SA, 517, 1, 50-54, Nov. 2008, Photosynthesis, which could control the size and position of Si nanocrystals being formed, as a novel nanofabrication technique making the best use of the strong interaction between photons and nanoparticles, is discussed in great detail. A nanocrystal growth is self-limited to the laser power and the laser-exposure time. The model is proposed to explain the self-limited growth and luminescence from the Si-rich oxide which was exposed to the laser. When the balance between the formation and loss of small amorphous Si clusters on the nanocrystal surface is maintained at a certain size, the nanocrystal growth will stop, and the final average size of the Si nanocrystals is achieved for each laser wavelength. The photoluminescence (PL) is observed when the Si nanocrystals are formed. The origin of the PL is associated with the small amorphous Si clusters, and its intensity increases with the increasing density of the Si clusters or photosynthesized Si nanocrystals. These small amorphous Si clusters remain particularly in the SiO nanopowder, which was made by thermal CVD using SiH(4) and O(2), even when the final average size is reached. The PL peak wavelength is well determined by the laser wavelength, which affects the structure of the small amorphous Si clusters and their light-emission energy. The photosynthesis is found to not only selectively form Si nanocrystals at low temperature, but also controls their size and even light-emission energy. (c) 2008 Elsevier B.V. All rights reserved.
Scientific journal, English - Thermal and ion induced annealing of nanocrystalline ZnO thin film deposited by atom beam sputtering
D. C. Agarwal; F. Singh; D. Kabiraj; S. Sen; P. K. Kulariya; I. Sulania; S. Nozaki; R. S. Chauhan; D. K. Avasthi
J. Phys. D: Appl. Phys., 41, 4, 045305 – 045310, 2008, Peer-reviwed
Scientific journal, English - Persistent photoconductivity in ZnO nanorods deposited on electro-deposited seed layers of ZnO
J. Nayak; J. Kasuya; A. Watanabe; S. Nozaki
J. Phys. Condensed Matter, 20, 195222-1 – 5, 2008, Peer-reviwed
Scientific journal, English - Effect of substrate on the structure and opticl properties of ZnO nanorods
J. Nayak; S. N. Sahu; J. Kasuya; S. Nozaki
J. Phys. D: Appl. Phys., 41, 115303-1 – 6, 2008, Peer-reviwed
Scientific journal, English - CdS-ZnO composite nanorods: Synthesis, characterization and application for photocatalytic degradation of 3,4-dihydroxy benzoic acid
J. Nayak; S. N. Sahu; J. Kasuya; S. Nozaki
Appl. Surface Science, 254, 22, 7215 – 7218, 2008, Peer-reviwed
Scientific journal, English - Growth and optical properties of SnO2 ultra-small nanorods by the novel micelle technique
S. Rath; S. Nozaki; H. Ono; K. Uchida; S. Khojima
Mat. Res. Soc. Symp. Proc., 1087, 1087-V03-29, 2008, Peer-reviwed
International conference proceedings, English - Photo-modification and synthesis of semiconductor nanocrystals
S. Nozaki; C. Y. Chen; H. Ono; K. Uchida
SURFACE SCIENCE, ELSEVIER SCIENCE BV, 601, 13, 2549-2554, Jul. 2007, Peer-reviwed, Both photo-oxidation and photosynthesis manifest a strong interaction between nanoparticles and photons due to the large surface area-to-volume ratio. The final sizes of the semiconductor nanocrystals are determined by the photon energy during these phenomena. The photosynthesis is demonstrated in a Si-rich oxide and is similar to thermal synthesis, which involves the decomposition of SiOx into Si and SiO2, that is well known and often employed to form Si or Ge nanocrystals embedded in SiO2 by annealing SiOx at high temperature. However, photosynthesis is much faster, and allows the low-temperature growth of Si nanocrystals and is found to be pronounced in the SiO nanopowder, which is made by thermal CVD using SiH4 and O-2. The minimum laser power required for the photosynthesis in the SiO nanopowder is much lower than in the Si-rich oxide formed by the co-sputtering of Si and SiO2. This is attributed to the weak bond strength of Si-Si and Si-O in the SiO nanopowder. Photosynthesis, which can control the size and position of Si nanocrystals, is a novel nanofabrication technique making the best use of the strong interaction between photons and nanoparticles. (C) 2006 Elsevier B.V. All rights reserved.
Scientific journal, English - Correlation between the base-emitter interface crystallinity quality and the current gain in InGaP/GaAs HBTs grown by MOVPE
Kazuo Uchida; Airi Kurokawam; Fu-Ying Yang; Zhi Jin; Shinji Nozaki; Hiroshi Morisaki
J. Crystal Growth, 298, 861 – 866, 2007, Peer-reviwed
Scientific journal, English - Yellowish-white photoluminescence from ZnO nanoparticles doped with Al and Li
J. Nayak; S. Kimura; S. Nozaki; H. Ono; K. Uchida
Superlattices and Microstructures, 42, 438 – 443, 2007, Peer-reviwed
Scientific journal, English - Mechanically strong ultralow-k nanoporous silica made of SiOx nanoparticles
Shinji Nozaki; Hiroshi Ono; Kazuo Uchida
Proceedings of Advance Metallization Conference 2006, 413 – 417, 2007, Peer-reviwed
International conference proceedings, English - Selective formation of size-controlled silicon nanocrystals by photosynthesis in SiO nanoparticle thin film
Changyong Chen; Seiji Kimura; Shinji Nozaki; Hiroshi Ono; Kazuo Uchida
IEEE TRANSACTIONS ON NANOTECHNOLOGY, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 5, 6, 671-676, Nov. 2006, Peer-reviwed, The SiOx thin film with a thickness of about 1 mu m was formed on a GaAs substrate by bar-coating with the organic solution of the SiOx nanoparticles (similar to 40 nm). The as-formed SiOx thin film consists of the SiOx nanoparticles; thus the thin film is macroscopically discontinuous and is referred to as a nanoparticle thin film. Although there were no silicon (Si) nanocrystals in the as-formed SiOx nanoparticle thin film, Si nanocrystals were observed by Raman scattering measurement after the thin film was exposed to the laser beam. The growth of Si nanocrystals by laser irradiation is referred to as photosynthesis. The photosynthesis of Si nanocrystals is found to be a self-limiting process. After the average size reaches a certain value, further increase of irradiation time or laser power does not increase the average size. The photosynthesis is similar to the thermal synthesis of Si nanocrystals from SiOx but much faster and low-temperature growth of Si nanocrystals from SiOx. Furthermore, the laser irradiation makes nanoparticles larger by merging. This suggests a possibility of low-temperature formation of a Si-nanocrystal array embedded in a SiO2 thin film. Such a structure has many potential device applications.
Scientific journal, English - Position and size-controlled photosynthesis of silicon nanocrystals in SiO2 films
C. Y. Chen; S. Kimura; S. Sen; S. Nozaki; H. Ono; K. Uchida; H. Morisaki
Proceedings of NanoSingapore 2006: IEEE Conference on Emerging Technologies-Nanoelectronics, 289 – 292, Jan. 2006
International conference proceedings, English - GaAs nanocrystals: Structure and vibrational properties
J. Nayak; S. N. Sahu; S.Nozaki
Applied Surface Science, 252, 2867 – 2874, 2006, Peer-reviwed
Scientific journal, English - Light scattering spectroscopies of semiconductor nanocrystals (quantum dots)
Peter Y. Yu; Grant Gardner; Shinji Nozaki; Isabelle Berbezier
J. Phys.: Conference Series, 28, 1 – 6, 2006, Peer-reviwed
Scientific journal, English - Passivation of InP-based HBTs
Z. Jin; K. Uchida; S. Nozaki; W. Prost; F.-J. Tegude
Applied Surface Science, 252, 7664 – 7670, 2006, Peer-reviwed
Scientific journal, English - Electron energy levels in ZnSe quantum dots
V. V. Nikesh; Amit D. Lad; Seiji Kimura; Shinji Nozaki; Shailaja Mahamuni
J. Appl. Phys., 100, 11, 113520-1 – 113520-6, 2006, Peer-reviwed
Scientific journal, English - Low-temperature formation of high-quality SiOx thin films by evaporation of SiO nanopowder
Shinji Nozaki; Seiji Kimura; Hiroshi Ono; Kazuo Uchida
Digest of Technical Papers, 19 – 22, 2006
International conference proceedings, English - Material Issues in high-frequency GaInP/GaAs heterojunction bipolar transistors
Shinji Nozaki; Hiroshi Ono; Kazuo Uchida; Hiroshi Morisaki
Proceedings of the XIII International Workshop on Physics of Semiconductor Devices, vol. II, 741 – 747, Dec. 2005
International conference proceedings, English - エレクトロニクス素子と集積の総合理解を目指す教育ー研究・教育活性化支援システム教育プロジェクトー（共著）
野崎眞次; 範 公可
電気通信大学紀要, 17, 1,2, 119-127, Jan. 2005, Peer-reviwed
Research institution, Japanese - DNA template-driven synthesis of HgTe nanoparticles
S. Rath; G.B.N. Chainy; S. Nozaki; S. N. Sahu
Physica E, 30, 182 – 185, 2005, Peer-reviwed
Scientific journal, English - Self-limiting photo-assisted synthesis of silicon nanocrystals
C. Y. Chen; S. Kimura; S.Sen; S. Nozaki; H. Ono; K. Uchida; H. Morisaki
Mat. Res. Soc. Symp. Procs. 832, F10.21.1 – F10.21.6, 2005, Peer-reviwed
International conference proceedings, English - SiOx超微粒子の蒸着による低温シリコン酸化膜の作製（共著）
木村 誠二; 野崎 眞次; 内田 和男; 小野 洋; 森崎 弘; 川崎 卓
電気通信大学共同研究成果発表会, 11-12, Jun. 2004
Japanese - Optical nonlineality of monodispersed, capped ZnS quantum particles（共著）
V. V. Nikesh; A. Dharmadhikari; H. Ono; S. Nozaki; G. R. Kumar; S. Mahamuni
Appl. Phys. Lett., 84, 23, 4602 – 4604, 2004, Peer-reviwed
Scientific journal, English - Growth and characterization of p-type InGaAs on InP substrates by LP-MOCVD using a new carbon-dopant source, CBrCl3（共著）
K. Uchida; K. Takahashi; S. Kabe; S. Nozaki; H. Morisaki
J. Crystal Growth, 272, 658 – 663, 2004, Peer-reviwed
Scientific journal, English - Quantum confinement effect in HgTe nanocrystals and visible luminescence（共著）
S. Rath; A. K. Dash; S. N. Sahu; S. Nozaki
International Journal of Nanoscience, 3, 3, 393 – 401, 2004, Peer-reviwed
Scientific journal, English - Substrate Nanostructuration: Self-assembling and Nanoparticles
I. Berbezier; A. Pimpinelli; R. Hull; S. Nozaki
Superlattices and Microstructures(European Materials Research Society Symposia Proceedings), 36, 1-3, 2004
International conference proceedings, English - Fabrication of nanostructured palladium-doped SiO2 films with variable temperature coefficient of resistivity
Takahisa Ichinohe; Susumu Masaki; Kazuo Uchida; Shinji Nozaki; Hiroshi Morisaki
Thin Solid Films, 466, 27 – 33, 2004, Peer-reviwed
Scientific journal, English - Real-time measurement of rocking curves during MOVPE growth of GaxIn1-xP/GaAs
S Bhunia; T Kawamura; Y Watanabe; S Fujikawa; J Matsui; Y Kagoshima; Y Tsusaka; K Uchida; N Sugiyama; M Furiya; S Nozaki; H Morisaki
APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, 216, 1-4, 382-387, Jun. 2003, Peer-reviwed, Measurement of real-time rocking curves of semiconductor heterostructures at various stages of metal organic vapor epitaxy (MOVPE) process may provide useful informations about the composition, thickness and in-built strain in the growing epilayer. In this study, we have used a previously grown lattice-matched GaInP/GaAs heterostructure as the reference substrate on which Ga(x)ln(1-x)P epilayers of different composition and thickness were successively grown by MOVPE while recording rocking curves of each layer in real-time during the growth by using synchrotron X-ray source. Strain redistribution at the interface of the GaInP/GaAs substrate due to the different linear thermal expansion coefficients of GaInP and GaAs was determined from rocking curve of the heterostructure measured at 570 degreesC. We could detect the change in rocking curve due to the growth of as thin as 16 nm of In-rich Ga0.42In0.58P epilayer at the initial stage of growth. Data from the simulation of each intermediate rocking curve during growth was systematically used to grow a lattice-matched GaInP epilayer. We believe, this is the first report of measurement of rocking curves at high temperature and during MOVPE growth of GaxIn1-xP. (C) 2003 Elsevier Science B.V. All rights reserved.
Scientific journal, English - Heavy carbon doping of GaAs by MOVPE using a new dopant source CBrCl3 and characterization of the epilayers
K Uchida; S Bhunia; N Sugiyama; M Furiya; M Katoh; S Katoh; S Nozaki; H Morisaki
JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 248, 124-129, Feb. 2003, Peer-reviwed, A new dopant source of carbon trichloro-bromide (CBrCl3), an inter-substituted compound of two highly efficient dopants viz. CCl4 and CBr4, has been used for the heave carbon doping of GaAs in metal organic vapor phase epitaxy (MOVPE) growth, High doping level of 1.12 x 10(20) cm(-3) was achieved at growth temperature of 600 degreesC and V/III ratio of 10. Self-compensation in the samples was systematically studied using the double Crystal X-ray diffraction. Hall and photoluminescence measurements. Samples with hole concentration Up to 7.36 x 10(19) cm(-3) were free of compensation, while those with higher hole concentrations were found to be compensated. Compensations of the layers were calculated quantitatively from conventional lattice mismatch measurements. Anti-site incorporation of carbon was found to be the dominant compensation mechanism for hole concentration above 7.36 x 10(19) cm(-3). (C) 2002 Elsevier Science B.V. All rights reserved.
Scientific journal, English - Metal organic vapor phase epitaxial growth of heavily carbon-doped GaAs using a dopant source of CCl3 and quantitative analysis of the compensation mechanism in the epilayers(共著)
S. Bhunia; K. Uchida; S. Nozaki; N. Sugiyama; M. Furiya; H. Morisaki
J. Appl. Phys., 93, 3, 1613-1619, 2003, Peer-reviwed
Scientific journal, English - Metal organic vapor phase epitaxial growth of heavily carbon-doped GaAs using a dopant source of CCl3 and quantitative analysis of the compensation mechanism in the epilayers（共著）
S. Bhunia; K. Uchida; S. Nozaki; N. Sugiyama; M. Furiya; H. Morisaki
J. Appl. Phys., 93, 3, 1613 – 1619, 2003, Peer-reviwed
Scientific journal, English - The effects of Sb on the oxidation of Ge quantum dots（共著）
Y. S. Lim; F. Bassani; A. Portavoce; A. Ronda; S. Nozaki; I. Berbezier
Materials Science and Engineering, B101, 1-3, 190-193, 2003, Peer-reviwed
International conference proceedings, English - EMRS 2002 Symposium S: Micro- and Nano-Structured Semiconductors
I.Berbezier; A. Nassiopoulou; S. Nozaki
Materials Science and Engineering, B101, 1-3, 2003
International conference proceedings, English - 超音速ジェットノズルによるシリコン超微粒子浮遊ゲートMOSキャパシターの作製(共著)
野村政人; 野崎真次; 小野 洋; 内田和男; 森崎 弘
応用物理学会分科会シリコンテクノロジーNo.46「量子サイズシリコン系素子−新機能と応用—」特集号, 46, 39-42, Nov. 2002
Japanese - ダブルヘテロGaAs/GaInP HBTのDC特性変化(共著)
降矢美保; 高橋一真; 浜 俊彦; 小野 洋; 内田和男; 野崎真次; 森崎 弘; 本城和彦
第63回応用物理学会学術講演会予稿集, 25p-YD-8, 288, Sep. 2002
Japanese - Ultralow K nanoporous silica by oxidation of silicon nanocrystals（共著）
Shinji Nozaki; H. Ono; K. Uchida; H. Morisaki; N. Ito; M. Yoshimaru
2002 International Interconnect Technology Conference (IEEE), 69, Jun. 2002
International conference proceedings, English - Oxidation study on Ge quantum dots(共著)
Y. S. Lim; I. Berbezier; A. Portavoce; S. Nozaki; F. Bassani; A. Ronda
European Materials Research Society 2002 Spring Meeting, Jun. 2002
English - Si超微粒子熱酸化によるナノポーラスシリカ膜の作製(共著)
安富大祐; 木原尚志; 小野 洋; 内田和男; 野崎真次; 森崎 弘; 吉丸正樹
電気通信大学共同研究センター第7回共同研究成果発表会, May 2002
Japanese - A photo-oxidation generated low-k dielectric film deposited by reactive evaporation of SiO
JJ Si; Y Show; S Banerjee; H Ono; K Uchida; S Nozaki; H Morisaki
MICROELECTRONIC ENGINEERING, ELSEVIER SCIENCE BV, 60, 3-4, 313-321, Apr. 2002, Peer-reviwed, A non-stoichiometric silicon oxide film has been deposited by evaporating SiO as a source material in Ar and 0, mixed gas. The film is composed of SiO and SiO2 and has a porous structure. The SiO, results from some part of SiO reacting with O-2 and its amount depends on the pressure in the chamber. The residual SiO in the film can be photo-oxidized into SiO, by ultraviolet radiation with a Hg lamp. The dielectric constant of the film after photo-oxidation is similar to1.89 +/- 0.04 (at frequency of 1 MHz), which shows that this porous structure film is promising for potential application as a low-k dielectric. (C) 2002 Elsevier Science B.V. All rights reserved.
Scientific journal, English - Capacitance-voltage hysteresis in the metal-oxide-semiconductor capacitor with Si nanocrystals deposited by the gas evaporation technique（共著）
P. Mishra; S. Nozaki; R. Sakura; H. Morisaki; H. Ono; K. Uchida
Materials Research Symposium Proceedings, 686, A.5.4.1, 2002, Peer-reviwed
International conference proceedings, English - Electron transport in Ge nanocrystalline films deposited using the cluster beam evaporation technique(共著)
S. Banerjee; S. Nozaki; H. Morisaki
J. Appl. Phys., 91, 7, 4307-4311, 2002, Peer-reviwed
Scientific journal, English - "Correlation between the dielectric constant and porosity of nanoporoous silica thin films deposited by the gas evaporation technique"（共著）
J. J. Si; H. Ono; K. Uchida; S. Nozaki; H. Morisaki; N. Ito
Appl. Phys. Lett., 79, 19, 3140, Nov. 2001, Peer-reviwed
Scientific journal, English - "固相Siナノクラスターによる半導体メモリー"（共著）
野崎真次; 佐倉 竜太; Puspashree Mishra; 内田和男; 森崎 弘
ナノ・インテリジェント材料シンポジウム、未踏科学技術協会・インテリジェント材料フォーラム主催、平成１３年１１月１３日、東京青学会館 （招待講演）, Nov. 2001
Japanese - Oxidation of MBE-grown Ge dots on Si and application to nanocrystal memories: Controlled positioning of Ge dots in SiO2
S. Nozaki
Si Ge Net Midterm Review Meeting, September 3 -4, 2001, Marseille, France (INVITED), Sep. 2001
International conference proceedings, English - In-situ study of growth mode by reflection of synchrotron x-ray during the metal organic vapor phase epitaxial growth of InP（共著）
S. Bhunia; K. Uchida; S. Nozaki; H. Morisaki; T. Kawamura; Y. Watanabe; S. Fujikawa; J. Matsui; Y. Kagoshima; Y. Tsusaka
International Conference on Crystal Growth - 13 in Conjunction with Vapor Growth and Epitaxy - 11, Kyoto, Japan, July 30 - Aug. 4., Jul. 2001
International conference proceedings, English - Compression of the dc drain current by electron trapping in AlGaN/GaN modulation doped field-effect transistors（共著）
S. Nozaki; H. Feick; E. R. Weber; M. Micovic; C. Nguyen
Appl. Phys. Lett., 78, 19, 2896-2898, May 2001, Peer-reviwed
Scientific journal, English - Wurtzite silicon nanocrystals deposited by the cluster-beam evaporation technique（共著）
J. Y. Zhang; H. Ono; K. Uchida; S. Nozaki; H. Morisaki
Phys. Stat. Sol.（b）, 223, 41-45, 2001, Peer-reviwed
Scientific journal, English - Study on pressure working time and releasing rate for phase transformation of Ge（共著）
M. Oh-ishi; S. Akiyama; K. Uchida; S. Nozaki; H. Morisaki
Phys. Stat. Sol.（b）, 223, 391-395, 2001, Peer-reviwed
Scientific journal, English - Effect of hydrogen treatment on high efficiency electroluminescence device using silicon nanocrystals（共著）
K. Sato; T. Izumi; M. Iwase; Y. Show; S. Nozaki; H. Morisaki
Mat. Res. Soc. Fall Meeting, Boston, USA, Nov. 27 - Dec. 1, 2000, Mat. Res. Soc. Symp. Proc., 638, F14.30.1-F14.30.6, 2001, Peer-reviwed
International conference proceedings, English - Formation of Ge nanocrystals passivated with Si by gas evaporation of Si and Ge（共著）
J. J. Si; H. Ono; K. Uchida; S. Nozaki; H. Morisaki
Materials Research Society Symposium Proceedings, 638, F14.4.1, Nov. 2000, Peer-reviwed
International conference proceedings, English - Analysis of twin defects in GaAs(III)B molecular beam epitaxy growth（共著）
Y. Park; M. Cich; R. Zhao; P. Specht; E. R. Weber; E. Stach; S. Nozaki
Journal of Vacuum Science and Technology B, 18, 3, 1566-1571, May 2000, Peer-reviwed
Scientific journal, English - Ultralow KSiO2 thin films with nano-voids by gas-evaporation technique
S Nozaki; S Banerjee; K Uchida; H Ono; H Morisaki
PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, IEEE, 140-142, 2000, We have developed the gas evaporation technique to deposit ultralow-k (as low as 1.7) SiO2 thin films with nanometer-size voids. In the technique silicon (Si) in a boat was evaporated in argon gas containing a small amount of oxygen. Although the film contains many nanometer-size voids, it is tolerant of moisture and does not show a change in the dielectric constant or the resistance with time. The SiO2, film deposited by the gas evaporation technique is a coed candidate for a low-k dielectric in the future Si VLSI.
International conference proceedings, English - CB Characteristics observed in Ge nanocrystalline films prepared by cluster beam evaporation technique（共著）
Souri Banerjee; S. Nozaki; H. Morisaki
Proceedings of the 10th International Workshop on Semiconductor Physics of Semiconductor Devices, 12/14-12/18/99, Delhi, India, 931-936, Dec. 1999
International conference proceedings, English - Study of growth process of germanicem nanocrystals using a grazing incidence x-ray diffraction method（共著）
H. Ninomiya; N. Ito; S. Rath; S. Nozaki; H. Morisaki
Journal of Vacwm Science and Technology B, 17, 5, 1903-1905, Oct. 1999, Peer-reviwed
Scientific journal, English - Analysis of twin defects in GaAs（111）B MBE growth（共著）
Y. Park; M. Cich; R. Zhao; P. Specht; E. R. Weber; E. Stach; S. Nozaki
18th North American Conference on Molecular Beam Epitaxy, Banff, Canada, Technical Digest, 147, Oct. 1999
International conference proceedings, English - Study of growth process of germanicem nanocrystals using a grazing incidence x-ray diffraction method（共著）
H. Ninomiya; N. Ito; S. Rath; S. Nozaki; H. Morisaki
Journal of Vacwm Science and Technology B, 17, 5, 1903-1905, Sep. 1999, Peer-reviwed
Scientific journal, English - Volume plasmons in porous silicon（共著）
S. Sato; S. Rath; S. Akiyama; S. Nozaki; H. Morisaki
Journal of Applied Physics, 86, 3, 1774-1776, Aug. 1999, Peer-reviwed
Scientific journal, English - Optical properties of tetragonal germanium nanocrystals deposited by the clcester-beam evaporation technique : New light emitting material for future（共著）
S. Nozaki; S. Sato; S. Rath; H. Ono; H. Morisaki
Bulletin of Materials Science, 22, 3, 377-381, May 1999
International conference proceedings, English - Plasmon loss features of germanium nanocrystals fabricated by the cluster beam evaporation technique
S Sato; S Nozaki; H Morisaki
THIN SOLID FILMS, ELSEVIER SCIENCE SA, 343, 481-483, Apr. 1999, Peer-reviwed, Plasmon loss features of germanium (Ge) nanocrystals fabricated by the cluster beam evaporation technique have been measured with Xray photoelectron spectroscopy (XPS). There is a significant difference between the plasmon energies of the Ge nanostructures and that of the bulk: 17.1-17.4 eV for the Ge nanocrystals; and 16.3 eV for the bulk. The plasmon energy of the Ge nanostructure, which remains at the higher value after annealing up to 700 degrees C, shifts to the lower value ( similar to 16.5 eV) after annealing at 800 degrees C. This energy difference is attributed to the crystal structure transformation. (C) 1999 Elsevier Science S.A. All rights reserved.
Scientific journal, English - Coulomb-blockade effect observed at room temperature in Ge nanocrystalline films deposited by the cluster-beam evaporation technique（共著）
Souri Banerjee; S. Nozaki; H. Morisaki
Applied Physics Letters, 76, 4, 445-447, Jan. 1999, Peer-reviwed
Scientific journal, English - Correlation between defect structures and light emission in Si-nanocrystal cloped SiO2 films（共著）
K. Sato; Y. Sugiyama; T. Izumi; M. Iwase; Y. Show; S. Nozaki; H. Morisaki
Materials Research Society Symposium Proceeclings, 536, 57-61, 1999, Peer-reviwed
English - High efficiency electroluminescence from anodically oxidized porous silicon（共著）
Y. Show; S. Nozaki; H. Morisaki; M. Iwase; T. Izumi
Electrochemical Society Proceedings, 99-22, 3-9, 1999, Peer-reviwed
International conference proceedings, English - SiドープSiO2薄膜の欠陥構造（共著）
佐藤慶介; 岩瀬満雄; 和泉富雄; 野崎眞次; 森崎 弘
東海大学紀要工学部, 1999年, 2, 1999
Research institution, Japanese - IMPROVEMENT OF RED LIGHT EMISSION IN H2 TREATED SILICON NANOCRYSTAL（共著）
K. Sato; Y. Sugiyama; T. Izumi; M. Iwase; Y. Show; S. Nozaki; H. Morisaki
Electrochemical Society Proceedings, 99-22, 240-245, 1999, Peer-reviwed
International conference proceedings, English - Volume Plasmons in porous silicon（共著）
S. Sato; S. Nozaki; H. Morisaki
The 194th Meeting of the Electrochemical Society, Boston, USA, Nov. 1 - 6, 1998, Abstruct, 4, Nov. 1998
International conference proceedings, English - Improved PL in porousslicon due to the compensation of the defect center by anodic oxidation（共著）
Y. Show; S. Rath; S. Nozaki; H. Morisaki
Matrials Research Societyu Symposium Proceedings, 536, 57-62, Nov. 1998, Peer-reviwed
International conference proceedings, English - Plasmon loss features of germanium nanocrystals fabricated by the cluster-beam evaporation technique（共著）
S. Sato; S. Nozaki; H. Morisaki
The 14th InternationalVaccum Congress, Bermingham, UK, Aug. 31 - Sep. 4, 1998, Abstract Book, 109, Aug. 1998
International conference proceedings, English - Evidence of a tetragonal structure of germanium nanocrystals prepared by the cluster-beam deposition technique
S Rath; S Sato; H Ono; S Nozaki; H Morisaki
MATERIALS CHEMISTRY AND PHYSICS, ELSEVIER SCIENCE SA, 54, 1-3, 244-246, Jul. 1998, Peer-reviwed, Germanium (Ge) nanocrystals are synthesized by a cluster-beam deposition technique. Raman and X-ray photoelectron spectroscopy (XPS) are used to investigate the crystal structure of the clusters. The phonon spectrum and the density-of-states of the valence band of the cluster-beam-deposited Ge nanoparticles bear a close resemblance to those of ST-12, which is a high pressure polymorph of Ge with a tetragonal structure. The usual diamond-like crystal structure of bulk Ge appears to be completely absent. The optical absorption spectrum from the near infrared to the ultraviolet also indicates an ST-12-like behaviour. (C) 1998 Elsevier Science S.A. All rights reserved.
Scientific journal, English - Density of states of the tetragonal-phase germanium nanocrystals using x-ray photoelectron spectroscopy
S Sato; S Nozaki; H Morisaki
APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 72, 19, 2460-2462, May 1998, Peer-reviwed, The valence-band x-ray photoelectron spectroscopy (XPS) spectra of the Ge nanocrystals deposited by the cluster-beam evaporation technique were studied, and suggest the presence of the tetragonal crystal structure (ST-12) of Ge in the Ge nanocrystals. Although the ST-12 structure of Ce is known to be metastable and is transformed to the diamond structure, which is the crystal structure of bulk Ge, at relatively low temperatures, the XPS and absorption spectra of the Ge nanocrystals annealed at various temperatures show that the obtained ST-12 structure is thermally stable. The critical temperature for the phase transformation of the Ge nanocrystals is found to be higher than 700 degrees C. These results are consistent with our earlier study using Raman spectroscopy. (C) 1998 American Institute of Physics. [S0003-6951(98)03219-7].
Scientific journal, English - Germanium nanostructures deposited by the cluster-beam evaporation technique（共著）
S. Nozaki; S. Sato; H. Ono; H. Morisaki
The 3rd International Symposium on Advanced Physical Fields, Tsukuba, Japan, Fev. 18-20，1998（invited），Proceedings ofthe 3rd International Symposium on Advanced Physical Fields, N. Koguch et al.（ed），J. Surface Analysis,, Feb. 1998
International conference proceedings, English - Germanium nanostructures deposited by the clusterbeam evaporation technique（共著）
S. Nozaki; S. Sato; H. Ono; H. Morisaki
J. Surface Analysis, 4, 2, 181-184, 1998, Peer-reviwed
Scientific journal, English - Oxidation characteristics of Genanocrystals embedded in an SiO2 matrix（共著）
Shyama Rath; H. Ono; S. Nozaki; H. morisaki
J. Surface Analysis, 4, 2, 251-254, 1998, Peer-reviwed
Scientific journal, English - Study of electriccel properties of Ge-nanocrystalline films depositecl by cluster-beam evaporation technique（共著）
S. Banerjee; H. Ono; S. Nozaki; H. Morisaki
Matrials Research Society Symposium Proceedings, 536, 551-556, 1998, Peer-reviwed
International conference proceedings, English - Hydrogenated carbon nitride thin films deposited by the plasma chemical vapor deposition technique using trimethylamine and ammonia（共著）
S. Kobayashi; S. Nozaki; H. Morisaki; S. Masaki
Japanese Journal of Applied Physics, 36, 8, 5187-5191, Aug. 1997, Peer-reviwed
Scientific journal, English - Photo-oxidation of germanium nanostructures deposited by the cluster-beam evaporation technique
S Sato; S Nozaki; H Morisaki
JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 81, 3, 1518-1521, Feb. 1997, Peer-reviwed, The photo-oxidation of germanium (Ge) nanostructures deposited by the cluster-beam evaporation technique is systematically studied. The significant photo-oxidation is found in the Ge-liquid nitrogen temperature (LNT) film, which was deposited on substrates whose temperature was kept at liquid nitrogen temperature during the deposition but not in the Ge-RT film, whose substrate temperature was room temperature. The difference in photo-oxidation of both types of Ge films is explained by denseness of Ge nanostructures. The threshold photon energy for photo-oxidation is close to the optical band gap estimated from the absorption spectrum of the as-deposited Ge-LNT film. The modified electron-active oxidation model is proposed to explain the photo-oxidation of Ge nanostructures. It is also hypothesized that the final size of Ge cores is determined by the incident photon energy and that the size of Ge cores becomes more uniform for prolonged photo-oxidation. (C) 1997 American Institute of Physics.
Scientific journal, English - Germanium nanostructures deposited by the cluster-beam evaporation technique(共著)
S. NOZAKI; S. SATO; H. ONO; H. MORISAKI; M. IWASE
Nuclear Instruments and Methods in Physics Research B, 121, 455-458, 1997
International conference proceedings, English - Photoluminescence characteristics of HF-treated Silicon nanocrystals (共著)
S. Nozaki; S. Sato; H. Ono; H. Morisaki
Materials Research Society Symposium Proceeding, 452, 159-164, 1997, Peer-reviwed
International conference proceedings, English - The structure and optical properties of silicon ultrafine particles deposited by the gas-evaporation technique with a supersonic jet nozzle
H One; S Nozaki; H Morisaki
NANOSTRUCTURED MATERIALS, PERGAMON-ELSEVIER SCIENCE LTD, 9, 1-8, 567-570, 1997, Peer-reviwed, The structure and properties of silicon (Si) ultrafine particles deposited on Si or SiO2 substrates at 300 K by the gas-evaporation technique with a supersonic jet nozzle were studied. The technique is designed to deposit Si ultrafine particles at the supersonic speed, resulting from the differential pressure between the Si evaporation and the Si deposition chamber The size of Si ultrafine particles can be controlled with the gas pressure in the evaporation chamber and the distance of the jet nozzle from the Si evaporation boat. The crystallinity and structure of Si ultrafine particles deposited by this technique were studied by the transmission electronmicroscopy (TEM) and the transmission electron diffraction (TED). With the fixed distance of 5 cm, the size increases from 7 to 10 nm when the pressure of argon gas in the evaporation chamber is increased from 1 to 5 torr. It is found that this technique can fabricate Si ultrafine particles with better uniformity in the size and better crystallinity than the conventional gas-evaporation technique. (C) 1997 Acta Metallurgica Inc.
Scientific journal, English - Characterization of diamond films for photoelectrolysis electrode
H Ono; T Sone; K Moriya; S Nozaki; H Morisaki; S Yugo
DIAMOND FILMS AND TECHNOLOGY, MYU K K, 7, 5-6, 362-364, 1997, Peer-reviwed
Scientific journal, English - Porous alloyed W/si Contacts for light emitting devices（共著）
T. Ichinohe; S. Masaki; S. Nozaki; H. Norisaki
Electrochemical Society Proceedings, 97-7, 517-523, 1997, Peer-reviwed
International conference proceedings, English - Germanium nanostractures deposited by the Cluster-beam evaporation technique（共著）
Shinji Nozaki; S. Sato; H. Ono; H. Morisaki
Physics, Chemistry and Application of Nanostructures : Review and Short Notes to Nanomeeting '97, World Scientific, 34-42, 1997
International conference proceedings, English - Germanium nanostructures deposited by the cluster-beam evaporation technique（共著）
Shinji Nozaki; S, Sato; H. Ono; H. Morisaki
Physics of Semiconductor Nanostructures, Narosa Publishing House, 1-11, 1997
International conference proceedings, English - Raman scattering from germanium small particles（共著）
S. Rath; T. Yamada; S. Sato; H. Ono; S. Nozaki; H. Morisaki
Physics of Semiconductor Nanostructures, Narosa Publishing House, 232-238, 1997
International conference proceedings, English - Electronic stucture of the valence band of tetragonal germanium nanostructures deposited by the cluster-beam evaporation technique（共著）
S. Sato; S. Nozaki; H. Morisaki
Electrochemical Society Proceedings, 97-11, 177-184, 1997, Peer-reviwed
International conference proceedings, English - MBE法による歪InGaAs/GaAs上へのInAs成長
脇 英司; 山口浩一; 野崎真次
第57回応用物理学会学術講演会講演予稿集, 7aZH8, 170, Sep. 1996
Research society, Japanese - Carbon nitride thin films deposited by the reactive ion beam sputtering technique
S Kobayashi; S Nozaki; H Morisaki; S Fukui; S Masaki
THIN SOLID FILMS, ELSEVIER SCIENCE SA, 281, 289-293, Aug. 1996, Peer-reviwed, Carbon nitride (C1-xNx) thin films were deposited at room temperature on Si and Ge substrates by the reactive ion beam sputter deposition (IBSD) technique. A pure graphite target has been sputtered with a nitrogen ion beam extracted from a Kaufman-type ion source. The films were characterized by Raman spectroscopy, IR absorption spectroscopy and X-ray photoelectron spectroscopy (XPS). There was no clear indication of the presence of C-N single bonds in the films. Raman and IR absorption spectra show two characteristic bands; a broad band composed of graphite G-band and disordered D-band of carbon, and the other associated with C=N triple bonds. The D-band suggests the presence of an amorphous carbon network, The XPS spectra show the presence of C=N triple and C=N conjugated double bonds. As a reliable structural model of the C1-xNx films, an amorphous network with C=N triple bond terminations, as well as substitutions of nitrogen into the network, have been proposed. Reactive IBSD with high acceleration energy and/or the irradiation of the primary ions onto the substrate have been found to be important to form a sp(3)-rich amorphous C-N network.
Scientific journal, English - Visible light emission from the porous alloyed Pt/Si contacts
T Ichinohe; S Nozaki; H Morisaki
THIN SOLID FILMS, ELSEVIER SCIENCE SA, 281, 610-612, Aug. 1996, Peer-reviwed, One of the major problems hindering the application of porous Si to electroluminescent devices is the high resistance of the electrode/porous Si contact. To overcome the problem, we anodized the alloyed Pt/Si contacts to form porous alloyed Pt/Si contacts and studied the chemical compositions and photoluminescence (PL). The porous alloyed Pt/Si contact exposed to the 488 nm line of the Ar ion laser light exhibits red-light emission (600-800 nm). The composition of the contact strongly depends on the alloying temperature, The PL spectra are similar to that of porous Si without Pt, and the peak wavelength is affected by the annealing process. However, the PL intensity is lower than that of porous Si without Pt. This is either due to the subsurface layer with the Pt,Si phase keeping the Si layer underneath From being anodized or keeping the emitted light from coming out of the surface. The I-V characteristic of the porous alloyed Pt/Si contact demonstrates a good ohmic contact with a low contact resistance.
Scientific journal, English - Nitrogen-ion irradiation during the deposition of C1-xNx thin films by ion beam sputtering technique(共著)
S. Kobayashi; K. Miyazaki; S. Nozaki; H. Morisaki; S. Fukui; S. Masaki
Journal of Vacuum Science and Technology A, 14, 3, 777-780, Jun. 1996, Peer-reviwed
Scientific journal, English - Nitrogen-ion irradiation during the deposition of C1-xNx thin films by ion beam sputtering technique(共著)
S. Kobayashi; K. Miyazaki; S. Nozaki; H. Morisaki; S. Fukui; S. Masaki
Journal of Vacuum Science and Technology A, 14, 3, 777-780, May 1996, Peer-reviwed
Scientific journal, English - Correlation between light emission and dangling bonds in porous silicon
M Shimasaki; Y Show; M Iwase; T Izumi; T Ichinohe; S Nozaki; H Morisaki
APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, 92, 617-620, Feb. 1996, Peer-reviwed, The results of a correlated study of light emmision and dangling bonds in porous silicon (PS) are given using electron spin resonance (ESR), photoluminescence (PL) and Fourier transform infrared (FTIR) transmission measurements. ESR analysis revealed the presence of two kinds of paramagnetic defect centers, which are (1) the a-center, namely Si dangling bonds with an isotropic g-value of 2.0055 in amorphous states, and (2) the P-b center, namely . Si-Si-3 defects the Si/SiO2 interface. These paramagnetic defect centers closely relate to non-radiative emission centers (recombination killer centers). Crystallinity and PL intensity of PS are increased by increasing the anodization temperature.
Scientific journal, English - Raman spectroscopy of germanium films deposited with cluster-beam technique(共著)
M. Wakaki; M; Iwase; Y. Show; K. Koyama; S. Sato; S. Nozaki; H. Morisaki
Physica B, 219/220, 535-537, 1996, Peer-reviwed
Scientific journal, English - Self-Limited stripe width in the seletive metalorganic chemical vapor deposition of GoAs(共著)
K. Yamaguchi; S. Nozaki
Electrochemical Society Proceedings, 96-2, 253-261, 1996
International conference proceedings, English - Tetragonal gemanium nanostructures seposited by the cluter-beam evaporation technique(共著)
S. Sato; S. Nozaki; H. Morisaki; M. Iwase
Electrochemical Society Proceedings, 95-25, 348-357, 1996, Peer-reviwed
International conference proceedings, English - Photo-sensitive tetragonal germanium nanostructures deposited by the cluster-beam evaporation
S Nozaki; S Sato; H Ono; H Morisaki; M Iwase; K Takahashi
THIRD INTERNATIONAL CONFERENCE ON INTELLIGENT MATERIALS - THIRD EUROPEAN CONFERENCE ON SMART STRUCTURES AND MATERIALS, SPIE - INT SOC OPTICAL ENGINEERING, 2779, 260-265, 1996
International conference proceedings, English - Phase transformation of germanium ultrafine particles at high temperature(共著)
S. Nozaki; S. Sato; H. Ono; H. Morisaki; M. Iwase
Materials Research Society Symposium Proceeding, 405, 223-228, 1996, Peer-reviwed
International conference proceedings, English - OVER-RELAXATION OF MISFIT STRAIN IN HEAVILY CARBON-DOPED GAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY AFTER ANNEALING
H SOHN; ER WEBER; S NOZAKI; K TAKAHASHI
APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 67, 8, 1104-1106, Aug. 1995, Peer-reviwed, Using double crystal x-ray diffractometry (XRD) and transmission electron microscopy (TEM), the annealing effects on heavily carbon-doped GaAs films were studied. From isochronal annealing, the evolution of compressive strain in carbon-doped GaAs films was observed by XRD. From cross-sectional TEM, unusual misfit dislocations with extra-half planes on the GaAs side were observed in the sample annealed at 900 degrees C for 30 min in addition to normal misfit dislocations with extra-half planes on the him side. A possible mechanism for the formation of such misfit dislocations is proposed based on the over-relaxation of misfit strain in the film. (C) 1995 American Institute of Physics.
Scientific journal, English - Intelligent materials in future electronics(共著)
K. Takahashi; S. Nozaki
IEEE Transactions on Components,Packaging, and Manufacturing Technology-Part A, 18, 2, 245-248, Jun. 1995, Peer-reviwed
Scientific journal, English - TETRAGONAL GERMANIUM FILMS DEPOSITED BY THE CLUSTER-BEAM EVAPORATION TECHNIQUE
S SATO; H MORISAKI; M IWASE
APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 66, 23, 3176-3178, Jun. 1995, Peer-reviwed
Scientific journal, English - Cyclic Shifts in the Photoluminescence Spectra of the Porous Si in HF(共著)
T. Ichinohe; S. Nozaki; H. Ono; H. Morisaki
Applied Physics Letters, 66, 13, 1644-1646, Mar. 1995, Peer-reviwed
Scientific journal, English - AMBIENT SCANNING-TUNNELING-MICROSCOPY AND ATOMIC-FORCE MICROSCOPY ON GAAS (110) TREATED WITH (NH4)(2)S-X AND SES2 SOLUTIONS
S NOZAKI; S TAMURA; K TAKAHASHI
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, AMER INST PHYSICS, 13, 2, 297-304, Mar. 1995, Peer-reviwed
Scientific journal, English - ELECTROLUMINESCENCE FROM CARBON-DOPED GAAS JUNCTIONS WITH SEMIINSULATING GAAS
SX TIAN; D HANEMAN; S NOZAKI; K TAKAHASHI
APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 66, 10, 1246-1248, Mar. 1995, Peer-reviwed
Scientific journal, English - Blue Light Emission From Germanium Ultrafine Particles by the Gas Evaporation Tehnique(共著)
Shinji Nozaki; S. Sato; A. Denda; H. Ono; H. Morisaki
Materials Research Sopciety Symposium Proceedings, 358, 133-138, 1995
International conference proceedings, English - Visible Ligth Emission from Si Nanostructures(共著)
H. Morisaki; S. Nozaki
Physics, Chemistry and Application of Nanostructures, 18-24, 1995
International conference proceedings, English - Visible Light Emission from Silicon Doped SiO2 Thin Film Deposited by Sputtering(共著)
Shinji Nozaki; H. Nakamura; H. Ono; H. Morisaki; N. Ito
Japenese Journal of Applied Physics supplement, 34, suppl34-1, 122-124, 1995, Peer-reviwed
Scientific journal, English - PhotoIuminescence study on oxygen-containing silicon nanostructures(共著)
S. Sato; H. Ono; S. Nozaki; H. Morisaki
Nanostructured Materials, 5, 5, 589-598, 1995, Peer-reviwed
Scientific journal, English - FROM INTELLIGENT SENSORS TO FUZZY SENSORS
K TAKAHASHI; S NOZAKI
SENSORS AND ACTUATORS A-PHYSICAL, ELSEVIER SCIENCE SA LAUSANNE, 40, 2, 89-91, Feb. 1994, Peer-reviwed, This review article gives an overview of recent sensor development and the prospects for future sensor technology. The ultimate goal of sensor development is to surpass the functions of human sensors, and the technology to fuse microsensors and macrosensors and systematize these fused sensors is expected to be in great demand in the future.
Scientific journal, English - Design of Future Electron Devices with Intelligent Materials (共著)
Shinji Nozaki; K. Takahashi
J, Intelligent Material Systems and Structures, 5, 136-140, Jan. 1994, Peer-reviwed
Scientific journal, English - Blue Ligth Emission from Silicon Ultrafine Particles(共著)
Shinji Nozaki; S. Sato; H. Ono; H. Morisaki
Materials Research Society Symposium Proceedings, 351, 399-404, 1994, Peer-reviwed
International conference proceedings, English - Research Activities on Intelligent Materials in Japan(共著)
K. Takahshi; S. Nozaki
Proceedings of the 2nd International Conference on Intelligent Materials, 1230, 1994
International conference proceedings, English - Double-Layer Structure and Its Role in Visible-Light Emission from Porous Silicon(共著)
H. Ono; T. Ichinohe; S. Nozaki; H. Morisaki
Electrochemical Society Proceedings, 94-17, 240-251, 1994, Peer-reviwed
International conference proceedings, English - Effects of Anodization Temperature on Photolumimescence From Porous Silicon (共著)
H. Ono; H. Gomyo; H. Morisaki; S. Nozaki; Y. Show; M. Shimasaki; T. Izumi
J. Electrochemical Society, 140, 12, L180-L182, Dec. 1993, Peer-reviwed
Scientific journal, English - STUDY ON THERMAL-STABILITY OF CARBON-DOPED GAAS USING NOVEL METALORGANIC MOLECULAR-BEAM EPITAXIAL STRUCTURES
S NOZAKI; K TAKAHASHI; M SHIRAHAMA; K NAGAO; J SHIRAKASHI; E TOKUMITSU; M KONAGAI
APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 62, 16, 1913-1915, Apr. 1993, Peer-reviwed, Two novel carbon-doped structures grown by metalorganic molecular beam epitaxy were used to study thermal stability over the temperature range from 650 to 800-degrees-C. Each structure consists of several GaAs layers with different carbon concentrations to characterize thermal stability of GaAs layers with various carbon concentrations simultaneously. The structure shows no significant carbon diffusion even after an 800-degrees-C-240 min anneal. However, the hole concentration of each carbon-doped GaAs layer in both structures has decreased, and a decrease of the hole concentration is more significant for a higher carbon concentration. With increasing the annealing time or temperature, the hole concentrations of all carbon-doped GaAs layers approach to the same value, low 10(19) cm-3.
Scientific journal, English - Application of Clusters to Artificial Atoms
野崎真次; 森崎 弘; 高橋 清
Intelligent Materials, 3, 2, 10-15, 1993
Scientific journal, Japanese - Carbon doping in molecular beam epitaxial (MBE) growth of GaAs using neopentane as a novel carbon source
E. Tokumitsu; M. Shrahama; K. Nagao; Shinji Nozaki; M. Konagai; K. Takahashi
The 7th International Conference on Molecular Beam Epitaxy, Aug. 1992
International conference proceedings, English - Modeling of silicon diffusion in GaAs using well defined silicon doped molecular beam epitaxy structures（共著）
J. J. Murray; M. D. Deal; E. L. Allen; D. A. Stevenson; Shinji Nozaki
J. Electrocjemical Society, 139, 7, 2037, Jul. 1992, Peer-reviwed
Scientific journal, English - Anomalous enhancement of beryllium diffusion in heavily carbon-doped GaAs（共著）
E. Tokumitsu; J. Shirakashi; Shinji Nozaki; M. Konagai; K. Takahashi; K. Matsumoto; J. J. Murray
The 19th International Symposium on GaAs and Related Compounds, Jul. 1992, Peer-reviwed
International conference proceedings, English - Raman study of heavily carbon-doped p-type InGaAs grown by MOMBE（共著）
J. Shirakashi; E. Tokumitsu; M. Konagai; Shinji Nozaki; K. Takahashi
11th Record of Alloy Semiconductor Physics and Electronics Symposium, 53, Jul. 1992
International conference proceedings, English - Design of the 21st-century electron devices with intelligent materials（共著）
Shinji Nozaki; K. Takahashi
Proceedings of the 1st International Conference on Intelligent Materials, 33-38, Mar. 1992
International conference proceedings, English - Enhanced carbon incorporation in InGaAs grown at low temperature by metalorganic molecular beam epitaxy (MOMBE) (共著)
J. Shirakashi; E. Tokumitsu; M. Konagai; A. Miyano; R. T. Yoshioka; Shinji Nozaki; K. Tkahashi
Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials, 705, 1992, Peer-reviwed
International conference proceedings, English - Heavily carbon-doped p-type InGaAs by MOMBE（共著）
E. Tokumitsu; J. Shirakashi; M. Qi; T. Yamada; Shinji Nozaki; M. Konagai; K. Takahashi
J. Crystal Growth, 120, 301, 1992, Peer-reviwed
Scientific journal, English - The thermal stability of heavily carbon-doped GaAs grown by metalorganic molecular beam epitaxy（共著）
H. Sohn; E. R. Weber; Shinji Nozaki; M. Konagai; K. Takahashi
Materials Research Society Symposium Proceedings, 262, 129, 1992, Peer-reviwed
International conference proceedings, English - GaAs Pseudo-Heterojunction Bipolal Transistor with a Heavily Carbon-Doped Base (共著)
Shinji Nozaki; K. Saito; J. Shirakashi; M. Qi; T. Yamada; E. Tokumitsu; M. Konagai; K. Takahashi; K. Matsumoto
Japanese J. Applied Physics, 30, 12B, 3840, Dec. 1991, Peer-reviwed
Scientific journal, English - P-type carbon-doped InGaAs grown by metalorganic molecular beam epitaxy（共著）
J. Shirakashi; T. Yamada; M. Qi; Shinji Nozaki; K. Takahashi; E. Tokumitsu; M. Konagai
Japanese J. Applied Physics, 30, 9B, L1609, Sep. 1991, Peer-reviwed
Scientific journal, English - Critical Thickness Anisotropy in Heavily Carbon-Doped P-Type(100)GaAs Layers Grown by Metalorganic Molecular Beam Epitaxy (共著)
T. George; E. R. Weber; Shinji Nozaki; T. Yamada; M. Konagai; K. Takahashi
Applied Physics Letters, 59, 1, 60, Jul. 1991, Peer-reviwed
Scientific journal, English - Characterization of heavily carbon-doped InGaAs grown by MOMBE（共著）
J. Shirakashi; T. Yamada; M. Qi; Shinji Nozaki; K. Takahashi
10th Record of Alloy Semiconductor Physics and Electronics Symposium, 297, Jul. 1991
International conference proceedings, English - Improved characteeristics of GaAs ,etal-semiconductor field-effect transistors on Si substrates back-coated with SiO2 by metalorbanic chemical vapor deposition（共著）
T. Egawa; Shinji Nozaki; T. Soga; T. Jimbo; M. Umeno
Applied Physics Letters, 58, 12, 1265, Mar. 1991, Peer-reviwed
Scientific journal, English - MOMBE Growth and Characterization of Heavily Carbon-Doped InGaAs (共著)
T. Yamada; Shinji Nozaki; R. Miyake; T. Fukamachi; J. Shirakashi; M. Konagai; K. Takahashi
J. Crystal Growth, 111, 584, 1991, Peer-reviwed
Scientific journal, English - Metalorganic Chemical Vapor Deposition Growth of Undoped GaAs with a Low Electron Concentration on Si Substrate (共著)
Shinji Nozaki; A. T. Wu; J. J. Murray; T. George; T. Egawa; M. Umeno
Applied Physics Letters, 57, 25, 2669, Dec. 1990, Peer-reviwed
Scientific journal, English - Improvement of GaAs metal-semiconductor field-effect transistors characteristics on SiO2 back-coated Si substrate by metalorganic chemical vapor deposition（共著）
T. Egawa; Shinji Nozaki; T. Soga; T. Jimbo; M. Umeno
Japanese J. Applied Physics, 29, 12, L2417, Dec. 1990, Peer-reviwed
Scientific journal, English - Transmission Electron Microscopy Investigation of Dislocation Bending by GaAsP/GaAs Strained Layer Superlattice on Heteroepitaxial GaAs/Si (共著)
J. S. Whelan; T. George; E. R. Weber; Shinji Nozaki; A. T. Wu; M. Umeno
J. Applied Physics, 68, 10, 5115, Nov. 1990, Peer-reviwed
English - GaAs PN Diodes with Heavily Carbon-Doped P-Type GaAs Grown on GaAs Substrate by MOMBE (共著)
Shinji Nozaki; R. Miyake; T. Yamada; M. Konagai; K. Takahashi
Japanese J. Applied Physics, 29, 10, L1731, Oct. 1990, Peer-reviwed
Scientific journal, English - Improvement of GaAs MESFET's characteristics on SiO2-back-coated Si substrate by MOCVD（共著）
T. Egawa; Shinji Nozaki; T. Soga; T. Jimbo; M. Umeno
Extended Abstracts of the 22nd Conference on Solid State Devices and Materials, 91, Aug. 1990, Peer-reviwed
International conference proceedings, English - Crystallinity and Schottky diode characteristics of GaAs grown on Si by metalorganic chemical vapor deposition（共著）
T. Egawa; Shinji Nozaki; N. Noto; T. Soga; T. Jimbo; M. Umeno
J. Applied Physics, 67, 11, 6908, Jun. 1990, Peer-reviwed
Scientific journal, English - Heavily carbon-doped InGaAs grown by metalorganic molecular beam epitaxy（共著）
T. Akatsuka; R. Miyake; Shinji Nozaki; T. Yamada; M. Konagai; K. Takahashi
Japanese J. Applied Physics, 29, 4, L537, Apr. 1990, Peer-reviwed
Scientific journal, English - Nucleation and defect generation in lattice matched and mismatched heteroepitaxial layers in the GaAs/AlxGa1-xP/Si system（共著）
T. George; E. R. Weber; Shinji Nozaki; A. T. Wu; N. Noto; M. Umeno
J. Applied Physics, 67, 5, 2441, Mar. 1990, Peer-reviwed
Scientific journal, English - Effects of Growth Temperature and V/III Ration on MOCVD-Grown GaAs-on-Si (共著)
Shinji Nozaki; N. Noto; T. Egawa; A. T. Wu; T. Soga; T. Jimbo; M. Umeno
Japanese Journal of Applied Physics, 29, 1, 138, Jan. 1990, Peer-reviwed
Scientific journal, English - Application of SIMS to the evaluation of crystal quality and electrical behavior of GaAs heteroepitaxy grown on silicon（共著）
J. J. Murray; Shinji Nozaki; T. george; A. T. Wu; P. W. Davies
The 7th International Conference on SIMS, 1990
International conference proceedings, English - Undoped GaAs with a low electron concentration grown on Si by MOCVD（共著）
Shinji Nozaki; A. T. Wu; J. J. Murray; T. George; M. Umeno
Materials Research Society Symposium Proceedings, 198, 213, 1990, Peer-reviwed
International conference proceedings, English - The influence of initial growth on defect generation in MOCVD grown GaAs/Si heteroepitaxial layers（共著）
T. George; E. R. Weber; Shinji Nozaki; A. T. Wu; M. Umeno
Materials Research Society Symposium Proceedings, 198, 207, 1990, Peer-reviwed
International conference proceedings, English - Characterization of MOCVD-grown AlGaAs/GaAs SQW lasers and GaAs MESFETs fabrication on Si substrate with SiO2-back coating（共著）
T. Egawa; H. Tada; Y. Kobayashi; Shinji Nozaki; T. Soga; T. Jimbo; M. Umeno
Materials Research Society Symposium Proceedings, 198, 141, 1990, Peer-reviwed
International conference proceedings, English - Heavily C-doped ptype InGaAs Lattice-matched to the GaAs substrate（共著）
T. Yamada; T. Akatsuka; Shinji Nozaki; R. Miyake; M. Konagai; K. Takahashi
Institute of Physics Conference Series (International Symposium and GaAs Related Compounds), 106, 899, 1990, Peer-reviwed
International conference proceedings, English - Defect characterization of GaAs on Si Grown by MOCVD（共著）
T. Soga; Shinji Nozaki; N. Noto; H. Nishikawa; T. Jimbo; M. Umeno
Japanese Journal of Applied Physics, 28, 12, 2441, Dec. 1989, Peer-reviwed
Scientific journal, English - Evidence of a gas phase transport mechanism for Si incorporation in the metalorganic chemical vapor deposition of GaAs（共著）
T. George; E. R. Weber; Shinji Nozaki; J. J. Murray; A. T. Wu; M. Umeno
Applied Physics Letters, 55, 20, 2090, Nov. 1989, Peer-reviwed
Scientific journal, English - New Mechanism for Si Incorporation in GaAs-on-Si Heteroepitaxial Layers Grown by Metalorganic Chemical Vapor Deposition (共著)
Shinji Nozaki; J. J. Murray; A. T. Wu; T. George; E. R. Weber; M. Umeno
Applied Physics Letters, 55, 16, 1674, Oct. 1989, Peer-reviwed
Scientific journal, English - GaAs/GaAsP superlattice effects on GaAs/Si grown by MOCVD（共著）
M. Umeno; T. Soga; T. Egawa; Shinji Nozaki; T. Jimbo
The 7th International Workshop on Future Electron Devices, Oct. 1989
International conference proceedings, English - Si上へのGaAsの結晶成長とそのヘテロ接合特性
曽我哲夫; 江川孝志; 野崎真次; 能登宣彦; 神保孝志; 梅野正義
電子情報通信学会研究会資料(SDM88-140), 13, Jan. 1989
Research society, Japanese - Electrical properties and its degradation of GaAs/Si grown by MOCVD（共著）
T. Egawa; D. Imanishi; Shinji Nozaki; T. Soga; T. jimbo; M. Umeno
The 1st International Meeting on Advanced Processing and Characterization of Semiconductor Optoelectronic Devices and Integrated Circuits, 1989
International conference proceedings, English - Effects of growth temperature on MOCVD-grown GaAs-on-Si（共著）
Shinji Nozaki; N. Noto; M. Okada; T. egawa; T. Soga; T. Jimbo; M. Umeno
Materials Research Society Symposium Proceedings, 148, 235, 1989, Peer-reviwed
International conference proceedings, English - Growth of GaAs on Si using AlGaP intermediate layer（共著）
N. Noto; Shinji Nozaki; T. Egawa; T. Soga; T. Jimbo; M. Umeno
Materials Research Society Symposium Proceedings, 148, 247, 1989, Peer-reviwed
International conference proceedings, English - Correlation between crystallinity and Schottky diode characteristics of GaAs grown on Si by MOCVD（共著）
T. Egawa; Shinji Nozaki; N. Noto; T. Soga; T. Jimbo; M. Umeno
Materials Research Society Symposium Proceedings, 148, 273, 1989, Peer-reviwed
International conference proceedings, English - Nucleation studies of lattice matched and mis-matched heteroepitaxial layers using the GaAs/AlxGa1-xP/Si system（共著）
T. George; E. R. Weber; A. T. Wu; Shinji Nozaki; N. Noto; M. Umeno
Materials Research Society Symposium Proceedings, 148, 253, 1989, Peer-reviwed
International conference proceedings, English - Crystal growth of GaAs on Si using III-V alloy intermediate layer（共著）
M. Umeno; T. Jimbo; T. Soga; T. Egawa; Shinji Nozaki; N. Noto
8th Record of Alloy Semiconductor Physics and Electronics Symposium, 343, 1989
International conference proceedings, English - Conduction and Charge Trapping in Polysilicon-Nitride-Oxide-Silicon Structures under Positive Gate Bias (共著)
Mehran Aminzadeh; Shinji Nozaki; R.V.Giridhar
IEEE Transactions on Electron Devices, 35, 4, 459, Apr. 1988, Peer-reviwed
Scientific journal, English - Specific contact resistivity of indium contacts to n-type CdTe（共著）
Shinji Nozaki; A. G. Milnes
J. Electronic Materials, 14, 147, 1985, Peer-reviwed
Scientific journal, English - Numerical Modeling of Looped C-V Characteristics in a p+n Junction Containing Mid-Bandgap Electron Traps（共著）
Shinji Nozaki; Arthur G. Milnes
Solid State Electronics, 26, 2, 115, 1983, Peer-reviwed
Scientific journal, English - Solar cell array performance: power analysis with defects（共著）
Shinji Nozaki; A. G. Milnes
Proceedings of the 16th IEEE photovoltaic specialists conference, Sep. 1982, Peer-reviwed
International conference proceedings, English - Analysis of solar cell array performance with open-circuit defects（共著）
Shinji Nozaki; Arthur G. Milnes
Solar Cells, 6, 375, 1982, Peer-reviwed
Scientific journal, English
MISC
- 酸化シリコンナノ粒子の新機能と応用
野崎眞次
Jan. 2006, 化学工業, 57, 1, 8 – 12, Japanese, Introduction other - 酸化シリコンナノ粒子の新機能：ナノの不思議
野崎眞次
Dec. 2005, SEMI News, 21, 6, 20 – 21, Japanese, Introduction other - Germanium Nanocrystals（共著）
S. Nozaki; S. Sato; H. Morisaki
2004, 3, 805-820, English, Introduction other - IV族半導体ナノクリスタルの可視発光
野崎真次
Apr. 1997, 電気学会技術報告書, 627, 70-77, Japanese, Introduction other - 米国での17年間
野崎真次
1997, 応用物理, 66, 8, 874, Japanese, Introduction other - 半導体クラスタの物性と評価
野崎真次
Apr. 1996, 電気学会技術報告, 583, Japanese, Introduction other - Relationship between Strucrere and light emission from Group (]G0004[) semiconducror ultrafine
森崎 弘; 野崎真次
1995, 真空, 38, 11, 935-942, Japanese, Peer-reviwed, Introduction other - インテリジェント材料の最近の研究動向（共著）
野崎真次; 高橋 清
Sep. 1992, 金属, 66, Japanese, Introduction other
Books and other publications
- 低温ポリシリコン薄膜トランジスタの開発－システムオンパネルをめざして－
木村誠二; 野崎眞次
Japanese, Joint work, 第3章 SiOナノ粉末の真空蒸着による高品位シリコン酸化膜の低温形成, シーエムシー出版, Feb. 2007 - Handbook of Semiconductor Nanostructures and Nanodevices
Souri Banerjee; Shinji Nozaki
English, Joint work, Few-electron memory: Fabrication, operations, and challenges, American Scientific Publisher, 2006 - Encyclopedia of Nanoscience and Nanotechnology
S. Nozaki; S. Sato; H. Morisaki
English, Joint work, Vol. 3 Germanium Nanocrystals, American Scientific Publisher, 2004 - Substrate Nanostructuration: Self-assembling and Nanoparticles
I. Berbezier; A. Pimpinelli; R. Hull; S. Nozaki
English, Editor, Special Issue of Superlattices and Microstructures 36 (1-3)2004 (European Materials Research Society Symposia Proceedings 174, 2004 - EMRS 2002 Symposium S, Micro- and Nano-Structured Semiconductors
I. Berbezier; A. Nassiopoulou; S. Nozaki
English, Editor, Special Issue, Materials Science and Engineering B101(1-3), 2002 - 自己組織化プロセス技術
村田好正; 尾関雅志; 野崎真次
Japanese, Editor, 第11章 Ge超微粒子の作製, 培風館, 1999 - ナノスペースの不思議な世界：ナノ空間の材料基礎科学
野崎真次
Japanese, Joint work, 第2章第1.3節 中性クラスターで新しい材料を作製する, 工業調査会, 1997 - Gaijin Scientist
Shinji Nozaki
English, Joint work, British Chamber of Commerce in Japan, 1996 - 有機半導体の実用化技術
野崎真次; 岩本光正
Japanese, Joint work, 第10章第1節 インテリジェント材料の概念, サイエンスフォーラム, 1993
Lectures, oral presentations, etc.
- Remote sensing: A combined big data and IoT tool for precision agriculture
T. George; S. Nozaki
Invited oral presentation, English, The Irago Conference 2018, Invited, International conference
01 Nov. 2018 - Effects of the tunneling barrier on the GaN Schottky diode
M. Takahashi; S. Nozaki; K. Uchida
Poster presentation, English, The Irago Conference 2018, International conference
01 Nov. 2018 - Optical Rectenna Designed for 30 THz
R. Kawaminami; S. Nozaki; K. Uchida
Poster presentation, English, The Irago Conference 2018, International conference
01 Nov. 2018 - Single-crystal NiO grown on GaN by MOVPE
Shinichi Watanabe; Teuku Muhammad Roffi; Kazuo Uchida; Shinji Nozaki
Poster presentation, English, The Irago Conference 2018, International conference
01 Nov. 2018 - High-Al content AlGaN pn diode with p-AlGaN improved by the UV wet oxidation
Xiaojia Zhang; Jun Morimoto; Kazuo Uchida; Shinji Nozaki
Poster presentation, English, 19th International Conference on Metal Organic Vapor Phase Epitaxy, San Diego, USA, International conference
05 Jun. 2018 - ラプラス変換QTSによる欠陥評価方法の改善
小池俊平; 内田和男; 野崎眞次
Poster presentation, Japanese, 第65回応用物理学春季学術講演会, 応用物理学会, 早稲田大学ベルサール高田馬場, Domestic conference
19 Mar. 2018 - Electrical activation of magnesium in AlGaN by UV wet oxidation
X. Zhang; S. Nozaki; K. Uchida
Poster presentation, English, The Irago Conference 2017, International conference
01 Nov. 2017 - Passivation of oxygen vacancies by UV wet oxidation of ZnO nanorods
S. Sakurai; J. Cho; K. Uchida; S. Nozaki
Poster presentation, English, International Symposium on Novel Energy Nanomaterials, Catalysts and Surfaces for Future Earth, 電気通信大学（東京）, International conference
30 Oct. 2017 - Passivation of oxygen Vacancies by UV wet oxidation of ZnO Nanorods
S. Sakurai; J. Cho; K. Uchida; S. Nozaki
Public symposium, English, International Symposium on Novel Energy Nanomaterials, Catalysts and Surfaces for Future Earth, International conference
29 Oct. 2017 - フロントゲート型ZnO薄膜トランジスタの低温作製
片寄翔太; 新坂龍一; 野崎眞次; 内田和男
Poster presentation, Japanese, 第64回応用物理学春季学術講演会, 応用物理学会, 横浜, Domestic conference
16 Mar. 2017 - MOVPE法による高Al組成AlGaN膜のモフォロジー及び結晶性へのVIII比の影響
境 周一; 近藤祐也; 小林貴弘; 水上裕太; 内田和男; 野崎眞次
Poster presentation, Japanese, 第64回応用物理学春季学術講演会, 応用物理学会, 横浜, Domestic conference
16 Mar. 2017 - Quest for a solar rectenna
Shinji Nozaki
Invited oral presentation, English, Industry-UCB-UEC Workshop 2017, Invited, UEC, 電気通信大学, International conference
02 Mar. 2017 - ZnO-nanorods: a possible white LED phosphor
Sachindra Nath Sarangi; Arun T; Dinseh K. Ray; Pratap Kumar Sahoo; Shinji Nozaki; Noriyuki Sugiyama; Kazuo Uchida
Oral presentation, English, The 61st DAE Solid State Physics Symposium, International conference
29 Dec. 2016 - Electrical characteristics of the MSM diode with a multilayer of metals and nonstoichiometric nickel oxide
Sultan Mahmud; Shinji Nozaki; Kazuo Uchida
Poster presentation, English, 2016 Materials Research Society Fall Meeting, Materials Research Society, Boston, MA, USA, International conference
28 Nov. 2016 - Electrical characteristics of the MSM diode with a multilayer of metals and nonstoichiometric nickel oxide
Sultan Mahmud; Shinji Nozaki; Kazuo Uchida
Poster presentation, English, The Irago Conference 2016, 電気通信大学、豊橋技術科学大学, 電気通信大学, International conference
01 Nov. 2016 - Growth and characterization of nickel ion oxide thin films grown by metal organic vapor phase epitaxy
Teuku Muhammad Roffi; Shinji Nozaki; Kazuo Uchida
Oral presentation, English, 18th International Conference on Metal Organic Vapor Phase Epitaxy, San Diego, USA, International conference
14 Jul. 2016 - Growth and laser lift-off of AlxGa1-xN based material systems for vertical UVC LEDs utilizing short-period superlattice structures
David T. Doan; Chih-Chien Pan; Shinji Nozaki; Kazuo Uchida
Oral presentation, English, 18th International Conference on Metal Organic Vapor Phase Epitaxy, San Diego, USA, International conference
12 Jul. 2016 - InGaP/GaAs Heterojunction Phototransistor Powered by an On-Chip GaAs Solar Cell for Energy Harvesting
Than Hong Phuc; Kazuo Uchida; Shinji Nozaki
Poster presentation, English, 2015 International Conference on Solid State Devices and Materials, 応用物理学会, 札幌, International conference
28 Sep. 2015 - Visible-blind UV sensor made by UV oxidation of metallic zinc on p-Si
Dongyuan Zhang; Kazuo Uchida; Shinji Nozaki
Oral presentation, English, 8th International Workshop on Zinc Oxide and Related Materials, Niagara Falls, Ontario, Canada, International conference
08 Sep. 2014 - Structural, electrical and optical properties of CoxNi1-xO films grown by metalorganic chemical vapor deposition
Teuku Muhammad Roffi; Kazuo Uchida; Shinji Nozaki
Oral presentation, English, 17th International Conference on Metal Organic Vapor Phase Epitaxy, Lausanne, Switzerland, International conference
14 Jul. 2014 - High-quality gate oxide formed at 150 oC for flexible electronics
Yasuhiro Iijima; Kenya Adachi; Ryo Usuda; Kazuo Uchida; Shinji Nozaki
Oral presentation, English, Exyended Abstracts of 2013 IWDTF
Nov. 2013 - フレキシブル基板上高品位MOS作製用の特異な材料とプロセス
野崎眞次
Public symposium, Japanese, STARCワークショップ2013, 株式会社 半導体理工学研究センター(STARC), 新横浜
Sep. 2013 - SOG溶液を用いた塗布ゲート酸化膜の低温作製
臼田 亮; 野崎眞次; 内田和男
Oral presentation, Japanese, 応用物理学会,第74回応用物理学会学術講演会
Sep. 2013 - UV酸化によるp-NiO/n-Siヘテロ接合ダイオードの作製
張 東元; 内田和男; 野崎眞次
Oral presentation, English, 応用物理学会,第74回応用物理学会学術講演会
Sep. 2013 - O2/Ni ratio dependence of structure and surface morphology in atmospheric pressure MOCVD grown NiO thin films
Teuku Muhammad Roffi; Kazuo Uchida; Shinji Nozaki
Oral presentation, English, 応用物理学会
Sep. 2013 - Impacts of radiation-induced defects on charge collection efficiencies of silicon carbide particle detectors
Naoya Iwamoto; Shinobu Onoda; Takahiro Makino; Takeshi Ohshima; Kazutoshi Kojima; Shinji Nozaki
Oral presentation, English, 2013 Defense, Security, and Sensing: Micro and Nanotechnolkogy Sensors, Systems, and Applications V
May 2013 - Effect of O2/Ni gas ratio on the epitaxial growth of NiO films by metalorganic chemical vapor deposition
Teuku Muhammad Roffi; Motohiko Nakamura; Kazuo Uchida; Shinji Nozaki
Oral presentation, English, 2013 MRS Spring Meeting
Apr. 2013 - Hydrothermal growth of zinc oxide nanorods and glucose-sensor application
Shinji Nozaki; Sachindra N; Sarangi; Surendra N. Nath; Kazuo Uchida
Invited oral presentation, English, INDO-US International Workshop on Nanosensor Science & Technology, NavalResearch Lab (US) and National Institute of Science and Technology (India), Berhampur, India, International conference
Feb. 2013 - Selective growth of ZnO nanorods by the hydrothermal technique
Shinji Nozaki; Sachin N. Sarangi; Surendra N. Sahu; Kazuo Uchida
Invited oral presentation, English, 6th International Workshop on Advanced Materials Science and Nanotechnology, 6th International Workshop on Advanced Materials Science and Nanotechnology, Ha Long City, Vietnam, International conference
Nov. 2012 - Effects of temperature and stress on the InGaP/GaAs heterojunction bipolar phototransistor
Than Hong Phuc; Yasushi Takaki; Kazuo Uchida; Shinji Nozaki
Oral presentation, English, 6th International Workshop on Advanced Materials Science and Nanotechnology
Nov. 2012 - Low-temperature formation of high-quality oxide for MOSFETs on flexible substrates
H. Hasegawa; Y. Iijima; K. Adachi; S. Nozaki; K. Uchida
Oral presentation, English, 2012 International Conference on Solid State Devices and Materials
Sep. 2012 - フレキシブル基板上高品位MOS作製用の特異な材料とプロセス
野崎眞次
Oral presentation, Japanese, イノベーション・ジャパン2012 JSTショートプレゼンテーション,イノベーション・ジャパン2012 JSTショートプレゼンテーション
Sep. 2012 - Highly p-typed superlattices consist of undoped InAs and carbon-doped GaAs layers
Kazuo Uchida; Heisuke Kanaya; Hiroshi Imanishi; Atsushi Koizumi; Shinji Nozaki
Oral presentation, English, 16th International Conference on Metal Organic Vapor Phase Epitaxy
May 2012 - Characterization of order/disordered GaInP/GaAs heterointerface by the quantum hall effect
Kazuo Uchida; Atsushi Koizumi; Shinji Nozaki; Keita Asano; Kiwamu Sato
Oral presentation, English, 16th International Conference on Metal Organic Vapor Phase Epitaxy
May 2012 - Inを拡散したZnドープ及びCドープGaAsの電気的特性
川島佑介; 小野 洋; 内田和男; 野崎眞次
Oral presentation, Japanese, 電子情報通信学会,東京支部学生会講演論文集
Mar. 2012 - High-quality oxide formed by evaporation of SiO nanopowder: Application to MOSFET’s on plastic substrates and GaN epilayers
S. Nozaki
Others, English, Electron Device Society India Chapter, IEEE
Jan. 2012 - Zinc oxide nanorods grown by the hydrothermal technique and their selective growth
S. Nozaki
Others, English, 特別講義, APEX Institute of Technology and Management
Jan. 2012 - ラプラス変換DLTSによる4H-SiC p+nダイオードの欠陥評価
小池俊平; 岩本直也; 小野田忍; 大島 武; 小島一聡; 小泉 淳; 内田和男; 野崎眞次
Oral presentation, Japanese, SiC及び関連ワイドギャップ半導体研究会第20回講演会予稿集,SiC及び関連ワイドギャップ半導体研究会第20回講演会
Dec. 2011 - ラプラス DLTS測定によるn形6H-SiC中のnegative-Uセンターの観察
小泉 淳、V; P. Markevich; 岩本直也; 佐々木 将; 小池俊平; 大島 武; 児島一聡; 木本恒暢; 内田和男; 野崎眞次; B. Hamilton; A. R. Peaker
Oral presentation, Japanese, SiC及び関連ワイドギャップ半導体研究会第20回講演会予稿集,SiC及び関連ワイドギャップ半導体研究会第20回講演会
Dec. 2011 - UV酸化による半導体ニッケル酸化膜の作製
張 東元; 小泉 淳; 小野 洋; 内田和男; 野崎眞次
Public symposium, Japanese, 電気通信大学・東京農工大学第8回合同シンポジウム, 電気通信大学・東京農工大学, 東京
Dec. 2011 - XPSによる低温シリコン酸化膜の評価―フレキシブル基板上の集積回路をめざして
野崎眞次
Invited oral presentation, Japanese, EPMA・表面分析ユーザーズミーティング2011招待技術講演, 日本電子（株）
Oct. 2011 - UV酸化による半導体ニッケル酸化物の作製
張 東元; 小泉 淳; 内田和男; Ramakrishnan Veerabahu; 野崎眞次
Oral presentation, English, 応用物理学会,第72回応用物理学会学術講演会
Sep. 2011 - Peak degradation of heavily-ion induced transient currents in 6H-SiC
T. Makino; N. Iwamoto; S. Onoda; T. Ohshima; K. Kojima; S. Nozaki
Oral presentation, English, 2011 International Conference on Silicon Carbide and Related Materials abstract
Sep. 2011 - Defects in an electron-irradiated 6H-SiC diode studied by alpha particle induced charge transient spectroscopy: Their impact on the degraded charge collection efficiency
N. Iwamoto; S. Onoda; T. Makino; T. Ohshima; K. Kojima; S. Koike; A. Koizumi; K. Uchida; S. Nozaki
Oral presentation, English, 2011 International Conference on Silicon Carbide and Related Materials abstract
Sep. 2011 - Improvement of high-power-white-LED lamp performance by liquid injection
T. M. Roffi; I. Idris; K. Uchida; S. Nozaki; N. Sugiyama; H. Morisaki
Oral presentation, English, IEEE Catalog Number CFP1177H-CDR
Jul. 2011 - In-situ etching of GaAs capping layer on InAs quantum dots by CBrCl3
H. Imanishi; A. Koizumi; M. Yoshida; K. Asano; K. Uchida; S. Nozaki
Oral presentation, Japanese, Extended Abstracts of The 30th Electronic Materials Symposium (EMS-30)
Jun. 2011 - Photomodification and synthesis of semiconductor nanocrystals
S. Nozaki
Others, English, The Biresh Patel Memorial Lecture 2011, Institute of Physics, Bhubaneswar, India
Jan. 2011 - その場化学エッチングによるGaAs上InAsドットの低密度化
今西 弘; 小泉 淳; 内田和男; 野崎眞次
Oral presentation, Japanese, 電気通信大学・東京農工大学第7回合同シンポジウム予稿集,電気通信大学・東京農工大学第7回合同シンポジウム
Dec. 2010 - SiC放射線検出器の作製と特性の評価
岩本直也; 小野田忍; 牧野高紘; 大島 武; 児島一聡; 小泉 淳; 内田和男; 野崎眞次
Oral presentation, Japanese, 電気通信大学・東京農工大学第7回合同シンポジウム予稿集,電気通信大学・東京農工大学第7回合同シンポジウム
Dec. 2010 - ラプラス変換DLTSによる6H-SiC p+nダイオードの欠陥評価
小池俊平; 岩本直也; 小野田忍; 大島 武; 小島一聡; 小泉 淳; 内田和男; 野崎眞次
Oral presentation, Japanese, 応用物理学会,SiC及び関連ワイドギャップ半導体研究会第19回講演会
Oct. 2010 - アルファ線を用いたSiCダイオード中の欠陥評価
岩本直也; 小野田忍; 牧野高紘; 大島 武; 児島一聡; 小泉 淳; 内田和男; 野崎眞次
Oral presentation, Japanese, 応用物理学会,SiC及び関連ワイドギャップ半導体研究会第19回講演会
Oct. 2010 - 単一の重イオンが6H-SiC MOSFETのドレインに誘起する過渡電流
小野田忍; 岩本直也; 牧野高紘; 児島一聡; 野崎眞次; 大島 武
Oral presentation, Japanese, 応用物理学会,SiC及び関連ワイドギャップ半導体研究会第19回講演会
Oct. 2010 - Effective cleaning of Si by the dry ice blasting for future dry process technology
H. Satoh; K. Uchida; A. Koizummi; S. Nozaki; W. Kondou; H. Hosono
Oral presentation, English, The 18th International Symposium on Semiconductor Manufacturing
Oct. 2010 - 高周波スパッタリングによるニッケル酸化物半導体の作製及び評価
永田篤史; 内田和男; 小泉 淳; 小野 洋; 野崎眞次
Oral presentation, Japanese, 電子情報通信学会技術研究報告
Oct. 2010 - CdS-ZnOヘテロ接合ナノロッドの特性及び3,4-ジヒドロキシ安息香酸の光触媒分解の応用
小野寺信男; 小泉 淳; 小野 洋; 内田和男; 野崎眞次
Oral presentation, Japanese, 社団法人日本表面科学会主催第30回表面科学学術講演会講演要旨集,社団法人日本表面科学会主催第30回表面科学学術講演会
Oct. 2010 - オーダリング現象によるInGaP/GaAsヘテロ接合界面物性への影響
佐藤 究; 小泉 淳; 小野 洋; 内田和男; 野崎眞次
Oral presentation, Japanese, 社団法人日本表面科学会主催第30回表面科学学術講演会講演要旨集,社団法人日本表面科学会主催第30回表面科学学術講演会
Oct. 2010 - SiOナノ粉末への光照射によるSiナノクリスタルの形成機構
杉本真矩; 小泉 淳; 小野 洋; 内田和男; 野崎眞次
Oral presentation, Japanese, 社団法人日本表面科学会主催第30回表面科学学術講演会講演要旨集,社団法人日本表面科学会主催第30回表面科学学術講演会
Oct. 2010 - 極微Ni酸化物キャパシタによる高速整流器の作製
木下昌久; 小泉 淳; 小野 洋; 内田和男; 野崎眞次
Oral presentation, Japanese, 社団法人日本表面科学会主催第30回表面科学学術講演会講演要旨集,社団法人日本表面科学会主催第30回表面科学学術講演会
Oct. 2010 - Compensation-dependent carrier transport of Al-doped p-type 4H-SiC
A. Koizumi; N. Iwamoto; S. Onoda; T. Ohshima; T. Kimoto; K. Uchida; S. Nozaki
Oral presentation, English, The 8th European Conference on Silicon Carbide and Related Materials
Sep. 2010 - CBrCl3その場エッチングがInAs量子ドットのサイズと密度に及ぼす影響
今西 弘; 小泉 淳; 内田和男; 野崎眞次
Oral presentation, Japanese, 応用物理学会,第71回応用物理学会学術講演会
Sep. 2010 - モンテカルロシミュレーションを用いた白色LEDの蛍光体分散構造の解析
富山茂樹; 小泉 淳; 内田和男; 野崎眞次
Oral presentation, Japanese, 応用物理学会,第71回応用物理学会学術講演会
Sep. 2010 - 真空紫外光照射によるSi/SiO2界面構造の改質
山崎政宏; 小泉 淳; 小野 洋; 内田和男; 野崎眞次
Oral presentation, Japanese, 応用物理学会,第71回応用物理学会学術講演会
Sep. 2010 - SiCダイオードの過渡電荷収集における電子線誘起欠陥の影響
岩本直也; 小野田忍; 牧野高紘; 大島 武; 児島一聡; 小池俊平; 小泉 淳; 内田和男; 野崎眞次
Oral presentation, Japanese, 応用物理学会,第71回応用物理学会学術講演会
Sep. 2010 - Refreshable decrease in peak height of ion beam induced transient current from silicon carbide metal-oxide semiconductor capacitors
T. Ohshima; N. Iwamoto; S. Onoda; T. Makino; M. Deki; S. Nozaki
Oral presentation, English, The 21st International Conference on the Application of Accelerators in Research and Industry
Aug. 2010 - Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-rays
T. Ohshima; N. Iwamoto; S. Onoda; T. Makino; S. Nozaki; K. Kojima
Oral presentation, English, The 8th European Conference on Silicon Carbide and Related Materials
Aug. 2010 - Study of in-situ CBrCl3 etching of InAs dots on GaAs substrates for controlling size and density
A. Koizumi; H. Imanishi; K. Uchida; S. Nozaki
Oral presentation, Japanese, The 29th Electronic Materials Symposium (EMS-29)
Jul. 2010 - フレキシブル基板、化合物半導体基板上のMOSFET作製用酸化シリコンナノ粒子：真空蒸着と光酸化による高品位酸化膜の作製
野崎眞次
Invited oral presentation, Japanese, ケースレー・シンポジウム2010, Keithley Instruments, Inc.
Jul. 2010 - Charge enhancement effects in 6H-SiC MOSFETs induced by heavy ion strike
S. Onoda; T. Makino; T. Ohshima; N. Iwamoto; G. Vizkelethy; K. Kojima; S. Nozaki
Oral presentation, English, 2010 IEEE Nuclear and Space Radiation Effects Conference
Jul. 2010 - Effect of in-situ CBrCl3 etching on the structural properties of InAs/GaAs quatum dots for controlling size and density
Atsushi Koizumi; Kazuo Uchida; S. Nozaki
Oral presentation, English, The 15th International Conference on Metal Organic Vapor Phase Epitaxy
May 2010 - InGaP/GaAsヘテロ接合バイポーラフォトトランジスタへのレッジパッシベーションの影響
長岡信介; 高木保志; 小泉 淳; 小野 洋; 内田和男; 野崎眞次
Oral presentation, Japanese, 電子情報通信学会,電子情報通信学会東京支部学生会「研究発表会」
Mar. 2010 - C-t法による低温酸化膜MOSキャパシターの電気的特性評価
高井伸彰; 小池俊平; 小野 洋; 内田和男; 野崎眞次
Oral presentation, Japanese, 電子情報通信学会,電子情報通信学会東京支部学生会「研究発表会」
Mar. 2010 - ドライアイスショットによるシリコン基板洗浄とそのシリコンプロセスへの導入
王 原; 内田和男; 野崎眞次
Oral presentation, Japanese, 電子情報通信学会,電子情報通信学会東京支部学生会「研究発表会」
Mar. 2010 - 異なる成膜方法によるITO/GaAsコンタクト抵抗の研究
荒井 優; 内田和男; 野崎眞次
Oral presentation, Japanese, 電子情報通信学会,電子情報通信学会東京支部学生会「研究発表会」
Mar. 2010 - 自立GaN基板N面におけるオーミック電極の形成およびその物性評価
斎藤雅彰; 内田和男; 野崎眞次
Oral presentation, Japanese, 電子情報通信学会,電子情報通信学会東京支部学生会「研究発表会」
Mar. 2010 - 電着法による酸化亜鉛の光学的特性評価
荒川盛司; 内田和男; 野崎眞次; 小野 洋; 小泉 淳
Oral presentation, Japanese, 電子情報通信学会,電子情報通信学会東京支部学生会「研究発表会」
Mar. 2010 - MOVPE法によるInP基板上へのInAs/GaAsの作製および評価
富岡能州; 小泉 淳; 内田和男; 野崎眞次
Oral presentation, 応用物理学会,第57回応用物理学関係連合講演会
Mar. 2010 - Comparative study on reliability of InP/InGaAs heterojunction bipolar transistors with highly Zn- and C-doped base layers
Atsushi Koizumi; Kazuki Oshitanai; Jaesung Lee; Kazuo Uchida; Shinji Nozaki
Oral presentation, English, Materials Research Society
Dec. 2009 - SiOナノ粒子への光照射によるシリコンナノ結晶の形成機構
杉本真矩; 小泉 淳; 小野 洋; 内田和男; 野崎真次
Oral presentation, Japanese, 電気通信大学・東京農工大学第6回合同シンポジウム
Dec. 2009 - The new molding method for high power LED package with fluidic passive cooling
Kazuo Uchida; Atsushi Koizumi; Shinji Nozaki; Hiroshi Morisaki; Noriyuki Sugiyama
Oral presentation, English, The second International conference on white LEDs and solid state lighting
Dec. 2009 - Charge collection efficiency of 6H-SiC P+N diodes degraded by low-energy electron irradiation
N. Iwamoto; S. Onoda; T. Ohshima; K. Kojima; A. Koizumi; K. Uchida; S. Nozaki
Oral presentation, English, Internatiuonal Conference on Silicon Carbide and Related Materials-2009
Oct. 2009 - ZnOナノロッドの水熱法による選択成長とその発光特性
菊地孝輔; 野崎眞次; 内田和男; 小野 洋; 小泉 淳
Oral presentation, Japanese, 社団法人日本表面科学会,第28回表面科学学術講演会講演要旨集
Oct. 2009 - Alドープp型4H-SiCの電気的特性の補償度依存性
小泉 淳; 岩本直也; 大島 武; 木本恒暢; 内田和男; 野崎眞次
Oral presentation, Japanese, 応用物理学会,第70回応用物理学会学術講演会
Sep. 2009 - 低エネルギー電子線照射による6H-SiCダイオードの電荷収集効率の低下
岩本直也; 小野田忍; 大島 武; 児島一聡; 小泉 淳; 内田和男; 野崎眞次
Oral presentation, Japanese, 応用物理学会,第70回応用物理学会学術講演会
Sep. 2009 - Cross-sectional scanning tunneling microscopy study of interfacial roughness in a GaInP/GaAs superlattice structure
Atsushi Koizumi; Yoko Mori; Ryo Iida; Kazuo Uchida; Shinji Nozaki
Oral presentation, Japanese, The 28th Electronic Materials Symposium (EMS-28)
Jul. 2009 - InGaP/GaAs heterointerfaces studied by cross-sectional scanning tunneling microscopy and their impact on the device characteristics
S. Nozaki; A. Koizumi; K. Uchida; H. Ono
Invited oral presentation, English, The International Conference Nanomeeting 2009, The International Conference Nanomeeting 2009, Minsk, Belarus, International conference
May 2009 - GaNの熱酸化によるMOSキャパシタの作製と評価
前田 哲平; 小泉 淳; 小野 洋; 内田和男; 野崎眞次
Oral presentation, Japanese, 社団法人 電子情報通信学会,東京支部学生会講演論文集
Mar. 2009 - 異なるp型ドーパントを有するInP/InGaAs HBTの特性の比較・評価
大下内 和樹; 小泉 淳; 内田和男; 野崎眞次
Oral presentation, Japanese, 社団法人 電子情報通信学会,東京支部学生会講演論文集
Mar. 2009 - Ge微粒子浮遊ゲートMOSキャパシタの作製及び電気的特性の評価
成瀬 健; 小泉 淳; 小野 洋; 内田和男; 野崎眞次
Oral presentation, Japanese, 社団法人 電子情報通信学会,東京支部学生会講演論文集
Mar. 2009 - InTiO/p-GaAsオーミックコンタクトのラマン散乱
李 宰盛; 木村仁志; 小泉 淳; 内田和男; 野崎眞次
Oral presentation, Japanese, 第56回応用物理学関係連合講演会講演予稿集,第56回応用物理学関係連合講演会
Mar. 2009 - Growth and vibrational properties of the tin-dioxide nanorods
S. Rath; S. Nozaki; H. Ono; K. Uchida
Public symposium, English, ナノ未来材料とコヒーレント光科学第5回東京農工大・電気通信大学合同シンポジウム, 東京農工大、電気通信大学, 東京
Dec. 2008 - InGaP自然超格子発生に関わるInGaP/GaAsヘテロ接合ダイオードへの影響
茶木健志郎; 内田和男; 野崎眞次; 小泉 淳; 小野 洋
Oral presentation, Japanese, 日本結晶成長学会,第38回結晶成長国内会議
Nov. 2008 - 基板による水熱法を用いたZnOナノロッドの成長への影響
五十嵐一帆; 野崎眞次; 内田和男; 小野 洋; 菊池孝輔
Oral presentation, Japanese, 社団法人日本表面科学会,第28回表面科学学術講演会講演要旨集
Nov. 2008 - 断面走査形トンネル顕微鏡によるInGaP/GaAs、GaAs/InGaP両界面粗さの観察
森 陽子; 野崎眞次; 内田和男; 小泉 淳
Oral presentation, Japanese, 社団法人日本表面科学会,第28回表面科学学術講演会講演要旨集
Nov. 2008 - SiO粉末への光照射によるSiナノ結晶の形成
李 宰盛; 野崎真次; 小泉 淳; 内田和男; 小野 洋
Oral presentation, Japanese, 応用物理学会,第69回応用物理学会学術講演会講演予講集
Sep. 2008 - InTiO(Indium Titanium Oxide)とp型GaAsの接触抵抗の低減化
木村仁志; 小泉 淳; 小野 洋; 内田和男; 野崎眞次
Oral presentation, Japanese, 応用物理学会,第69回応用物理学会学術講演会講演予講集
Sep. 2008 - ヘテロ界面の急峻性とダイオード特性の評価
小泉 淳; 野崎眞次; 茶木健志郎; 富岡能州; 内田和男
Oral presentation, Japanese, 応用物理学会,第69回応用物理学会学術講演会講演予講集
Sep. 2008 - GaInP/GaAs界面とGaAs/GaInP界面における界面粗さがDHBTのDC特性に与える影響
A. Koizumi; S. Nozaki; K. Uchida
Oral presentation, Japanese, 27th Electronic Materials Symposium (EMS-27)
Jul. 2008 - Characterization of the MOVPE-grown p-InGaAs/n-InP interfaces
K. Uchida; H. Yamato; A. Koizumi; S. Nozaki
Oral presentation, English, The 14th International Conference on Metal Organic Vapor Phase Epitaxy
Jun. 2008 - Effects of the heterointerface quality of GaInP/GaAs double heterojunction bipolar transistors
A. Koizumi; S. Nozaki; N. Furesawa; F. - Y. Yang; K. Uchida
Oral presentation, English, The 14th International Conference on Metal Organic Vapor Phase Epitaxy
Jun. 2008 - High-quality oxide formed by evaporation of SiO nanopowder: Application to MOSFET’s on plastic substrates and GaN epilayers
S. Nozaki; S. Kimura; A. Koizumi; H. Ono; K. Uchida
Invited oral presentation, English, The E-MRS 2008 Spring Meeting, Symposium J, European Materials Research Society, Strasbourg, France, International conference
May 2008 - Growth and optical properties of SnO2 ultra-small nanorods by the novel micelle techniques
S. Rath; S. Nozaki; H. Ono; K. Uchida; S. Kojima
Oral presentation, English, Materias Research Society Spring Meeting
Mar. 2008 - 二次元電子を用いた高性能ホール素子に関する研究
李 一侃; 内田和男; 野崎眞次; 小野 洋
Oral presentation, Japanese, 電子情報通信学会東京支部学生会研究発表会
Mar. 2008 - HBT試作のためのInP/InGaAs界面の研究
和 秀憲; 小泉 淳; 内田和男; 野崎眞次
Oral presentation, Japanese, 電子情報通信学会東京支部学生会研究発表会
Mar. 2008 - Ge微粒子の作製及びメモリデバイスへの応用
鈴木 教志; 小野 洋; 内田和男; 野崎眞次
Oral presentation, Japanese, 電子情報通信学会東京支部学生会研究発表会
Mar. 2008 - 電子線描画を用いたAlGaN/GaN HEMTにおけるオン抵抗の低減
古嶌 勝貴; 小泉 淳; 内田和男; 野崎眞次; 鹿内洋志; 後藤博一
Oral presentation, Japanese, 電子情報通信学会2008年総合大会エレクトロニクス講演論文集
Mar. 2008 - Al/Ni/Au電極を用いた自立n-GaN基板N面へのオーミックコンタクトに関する研究
加藤 怜; 齋藤雅影; 内田和男; 野崎眞次
Oral presentation, Japanese, 第55回応用物理学関係連合講演会講演予稿集
Mar. 2008 - LedgeパッシベーションによるInGaP/GaAs HBTの信頼性の向上
楊 富穎; 野崎眞次; 内田和男; 小泉 淳
Oral presentation, Japanese, 電子情報通信学会技術研究報告
Jan. 2008 - Photosynthesis and photoluminescence of Si nanocrystlas in sputter-deposited SiOx
C. Y. Chen; S. Nozaki; S. Kimura; H. Ono; K. Uchida
Oral presentation, English, University of Electro-Communications 21st Century COE Program International Symposium on Coherent Optical Science
Dec. 2007 - シリコンナノクリスタルの光合成
李 宰盛; 陳 長勇; 野崎真次; 内田和男; 小野 洋
Oral presentation, Japanese, 電気通信大学・東京農工大学21世紀COEプログラム第4回合同シンポジウム
Dec. 2007 - 化学合成したBi添加SiO粒子とその蒸着膜の評価
山本翔平; 野崎眞次; 木村誠二; 内田和男; 小野 洋
Oral presentation, Japanese, 薄膜材料デバイス研究会第4回研究集会
Nov. 2007 - 高濃度p-NiOx薄膜の物性解析及び作製プロセスの最適化
水野拓巨; 小野 洋; 内田和男; 野崎真次
Oral presentation, Japanese, 応用物理学会,第68回応用物理学会学術講演会講演予講集
Sep. 2007 - SiO粉末による高品位SiOx薄膜の低温形成
成澤正博; 木村誠二; 小野 洋; 内田和男; 野崎真次
Oral presentation, Japanese, 応用物理学会,第68回応用物理学会学術講演会講演予講集
Sep. 2007 - SiOx薄膜への光照射によるSiナノ結晶の形成
李 宰盛; 陳 長勇; 野崎真次; 内田和男; 小野 洋
Oral presentation, Japanese, 応用物理学会
Sep. 2007 - SiOxナノ粉末から光合成されたSiナノクリスタルの発光
陳 長勇; 野崎真次; 内田和男; 小野 洋
Oral presentation, Japanese, 応用物理学会
Sep. 2007 - GaN MIS素子のための高品位シリコン酸化膜
木村誠二; 小野 洋; 内田和男; 野崎真次
Oral presentation, Japanese, 応用物理学会
Sep. 2007 - Photoluminescence of Si nanocrystals formed by the photosynthesis
S. Nozaki; C. Y. Chen; S. Kimura; H. Ono; K. Uchida
Invited oral presentation, English, International Conference on Si Epitaxy and Heterostructures, Marseille, France, International conference
May 2007 - InP/InGaAs HBTデバイスに向けたp型InGaAs層の作製及び、TCADによる評価
芋川 直; 内田和男; 野崎眞次; 小野 洋
Oral presentation, Japanese, 電子情報通信学会東京支部学生会研究発表会第12回
Mar. 2007 - 酸化銅ナノロッドの太陽電池への応用
崎野晃滋; 野崎眞次; 内田和男; 小野 洋
Oral presentation, Japanese, 固体化学の新しい指針を探る研究会第56回定例研究会『若手研究者による研究発表会』
Mar. 2007 - 水熱法によるZnOナノロッドの作製
粕谷仁一; 野崎眞次; 内田和男; 小野 洋
Oral presentation, Japanese, 固体化学の新しい指針を探る研究会第56回定例研究会『若手研究者による研究発表会』
Mar. 2007 - Mechanically strong ultralow-k nanoporous silica made of SiOx nanoparticles
Shinji Nozaki; Hiroshi Ono; Kazuo Uchida
Oral presentation, Japanese, 電気通信大学・東京農工大学21世紀COEプログラム,電気通信大学・東京農工大学21世紀COEプログラム第3回合同シンポジウム
Dec. 2006 - SiO nanopowder with metastable Si-Si networks
C. Y. Chen; S. Kimura; S. Nozaki; K. Uchida; H. Ono
Oral presentation, Japanese, 電気通信大学・東京農工大学21世紀COEプログラム,電気通信大学・東京農工大学21世紀COEプログラム第3回合同シンポジウム
Dec. 2006 - Ni酸化物の物性評価とp-GaNオーミックコンタクトへの応用
斉藤貴夫; 内田和男; 野崎眞次; 小野 洋
Oral presentation, Japanese, 応用物理学会,薄膜材料デバイス研究会第3回研究集会
Nov. 2006 - Bi添加SiOによるワイドギャップ半導体の作製
宮田浩正; 木村誠二; 野崎眞次; 内田和男; 小野 洋
Oral presentation, Japanese, 応用物理学会,薄膜材料デバイス研究会第3回研究集会
Nov. 2006 - Mechanically strong ultralow-k nanoporous silica made of SiOx nanoparticles
Shinji Nozaki; Hiroshi Ono; Kazuo Uchida
Oral presentation, English, IEEE
Oct. 2006 - Mechanically strong ultralow-k nanoporous silica made of SiOx nanoparticles
Shinji Nozaki; Hiroshi Ono; Kazuo Uchida
Oral presentation, English, 応用物理学会,Advanced Metallization Conference
Sep. 2006 - 走査型トンネル顕微鏡によるGaInP/GaAsへテロ界面の粗さ解析
大塚史之; 渡邊明広; 野崎真次; 内田和男; 小野 洋
Oral presentation, Japanese, 応用物理学会,第67回応用物理学会学術講演会講演予講集
Sep. 2006 - Photo-modification and synthesis of semiconductor nanocrystals
S. Nozaki; C. Y. Chen; H. Ono; K. Uchida
Invited oral presentation, English, International Conference on Nano-Structures Self Assembling, CNRS-France, Aix-en-Provence, France, International conference
Jul. 2006 - Low-temperature formation of high-quality SiOx thin films by evaporation of SiO nanopowder
Shinji Nozaki; Seiji Kimura; Hiroshi Ono; Kazuo Uchida
Invited oral presentation, English, The 13th International Workshop on Active-Matrix Flatpanel Displays and Devices, 応用物理学会, Tokyo, Japan, International conference
Jul. 2006 - Correlation between the base-emitter interface crystalline quality and the current gain in InGaP/GaAs HBT grown by MOVPE
K. Uchida; A. Kurokawa; S. Nozaki; H. Morisaki
Oral presentation, English, The 13th International Conference on Metal Organic Vapor Phase Epitaxy
May 2006 - Yellowish-white photoluminescence from ZnO nanoparticles
J. Nayak; S. Nozaki; H. Ono; K. Uchida
Oral presentation, English, E-MRS
May 2006 - 表面プラズモン効果を用いたラマン分光法による低密度のGe超微粒子の分析
寺田 力; セン・ソマディティヤ; 小野 洋; 内田和男; 野崎眞次; 森崎 弘
Oral presentation, Japanese, 応用物理学会,第53回応用物理学会学関係連合講演会
Mar. 2006 - 自然超格子を有するInGaP/GaAs HBTへテロ接合界面におけるバンド不連続の研究
触澤宣晶; 小野 洋; 内田和男; 野崎眞次; 森崎 弘
Oral presentation, Japanese, 応用物理学会,第53回応用物理学会学関係連合講演会
Mar. 2006 - InGaP/GaAsヘテロ接合バイポーラトランジスタ特性への表面再結合の影響
黒川愛里; 金 智; 小野 洋; 内田和男; 野崎眞次; 森崎 弘
Oral presentation, Japanese, 電子情報通信学会,電子情報通信学会技術研究報告
Jan. 2006 - Material Issues in high-frequency GaInP/GaAs heterojunction bipolar transistors
Shinji Nozaki; Hiroshi Ono; Kazuo Uchida; Hiroshi Morisaki
Invited oral presentation, English, The XIII International Workshop on Physics of Semiconductor Devices, IEEE, EDS, New Delhi, India, International conference
Dec. 2005 - 光励起によるシリコンナノ結晶の形成とその二次元配列
野崎眞次; C. Y. Chen; 小野 洋
Invited oral presentation, Japanese, 電気通信大学・東京農工大学21世紀COEプログラム第2回合同シンポジウム
Dec. 2005 - Position and size-controlled photosynthesis of silicon nanocrystals
C. Y. Chen; S. Kimura; S. Sen; S. Nozaki; H. Ono; K. Uchida; H. Morisaki
Public symposium, English, 電気通信大学・東京農工大学21世紀COEプログラム第2回合同シンポジウム, 東京
Dec. 2005 - SiO超微粉を原料とした低温・高品位SiO2薄膜の製作と評価
野崎眞次; 木村誠二; 小野 洋; 内田和男; 森崎 弘
Invited oral presentation, Japanese, 薄膜材料デバイス研究会第2回研究集会
Nov. 2005 - NiO薄膜を用いたp-GaNオーミックコンタクトに関する研究
内藤寛人; 斉藤貴夫; 小野 洋; 内田和男; 野崎眞次; 森崎 弘
Oral presentation, Japanese, 薄膜材料デバイス研究会第2回研究集会
Nov. 2005 - BiドープSiOx導電膜の特性評価
牛田賢志; 木村誠二; 森崎 弘; 野崎眞次; 内田和男; 小野 洋
Oral presentation, Japanese, 薄膜材料デバイス研究会第2回研究集会
Nov. 2005 - バラスト抵抗用Ni微粒子混合誘電体薄膜の作製と評価
横山 彩; 野崎眞次; 内田和男; 小野 洋; 森崎 弘
Oral presentation, Japanese, 薄膜材料デバイス研究会第2回研究集会
Nov. 2005 - ナノ構造分散系としての金属ドープガラス薄膜の電気伝導とデバイス応用(II)
大杉秀水; 一戸隆久; 野崎眞次; 森崎 弘; 正木 進
Oral presentation, Japanese, 薄膜材料デバイス研究会第2回研究集会
Nov. 2005 - バラスト抵抗用Ni微粒子混合Si3N4薄膜の作製と評価
横山 彩; 野崎眞次; 内田和男; 小野 洋; 森崎 弘
Oral presentation, Japanese, 電気学会,誘電・材料/電子材料合同研究会
Oct. 2005 - Passivation of III-V semiconductor HBTs
Z. Jin; K. Uchida; S. Nozaki; W. Prost; F. –J. Tegude
Invited oral presentation, English, IV International Workshop on Semiconductor Surface Passivation, Ustron, Poland, International conference
Sep. 2005 - ナノポーラスシリカLow-k膜の低温熱処理と膜機械強度
倪 威; 小野 洋; 内田和男; 野崎真次; 森崎 弘
Oral presentation, Japanese, 応用物理学会,第66回応用物理学会学術講演会講演
Sep. 2005 - 走査型トンネル顕微鏡によるGaInP氏前兆格子構造の観察
平川長規; 大塚史之; 野崎真次; 小野 洋; 内田和男; 森崎 弘
Oral presentation, Japanese, 応用物理学会,第66回応用物理学会学術講演会
Sep. 2005 - 酸化シリコンナノ粒子の新機能
野崎眞次
Others, Japanese, イノベーションジャパン2005
Sep. 2005 - Light scattering spectroscopies of semiconductor nanocrystals (quantum dots)
P. Y. Yu; G. Gardner; S. Nozaki; I. Berbezier
Invited oral presentation, English, The 3rd International Conference on Materials for Advanced Technologies, Symposium Y: Optical Spectroscopic Techniques, Singapore, International conference
Jul. 2005 - 階段状ドーピングプロファイルによるバラクターダイオードの高性能化（共著）
中島誠幸; 内田和男; 野崎眞次; 森崎 弘
Oral presentation, Japanese, 電子情報通信学会2005年総合大会エレクトロニクスソサイエティ
Mar. 2005 - Pdナノクリスタル含有SiO2の大気中及び低真空中SPM観察（共著）
平川長規; 野崎眞次; 小野 洋; 内田和男; 森崎 弘
Oral presentation, Japanese, 第52回応用物理学関係連合講演会
Mar. 2005 - Self-limiting photo-assited synthesis of silicon nanocrystals
C. Y. Chen; S. Kimura; S .Sen; S. Nozaki; H. Ono; K. Uchida; H. Morisaki
Oral presentation, English, Materias Research Society Fall Meeting, ボストン
Dec. 2004 - Self-limiting photo-assisted synthesis of silicon nanocrystals（共著）
C. Y. Chen; S. Kimura; S. Sen; S. Nozaki; H. Ono; K. Uchida; H. Morisaki
Oral presentation, English, 東京農工大学・電気通信大学21世紀COEプログラム合同シンポジウム予稿集「ナノ未来材料とコヒーレント光科学」
Dec. 2004 - 金属酸化物透明電極を用いた白色LEDの高機能化に関する研究（共著）
伊藤 純; 内田 和男; 野崎 眞次; 森崎 弘; 長岡 亜季則; 内藤 寛人
Oral presentation, Japanese, 日本光学会年次学術講演会OJ2004
Nov. 2004 - ナノ構造分散系としての金属ドープガラス薄膜の電気伝導とデバイス応用（共著）
椛木 弘美; 一戸 隆久; 野崎 眞次; 森崎 弘; 正木 進
Oral presentation, Japanese, 薄膜材料デバイス研究会アブストラクト集
Nov. 2004 - ITO薄膜における深さ方向の構造についての光学的研究（共著）
長岡 亜季則; 野崎 眞次; 内田 和男; 森崎 弘; 伊藤 純; 内藤 寛人
Oral presentation, Japanese, 薄膜材料デバイス研究会アブストラクト集
Nov. 2004 - 超高真空走査型トンネル顕微鏡によるInGaP/GaAs超格子断面の観察（共著）
郡司 貢; 平川 長規; 千葉 綾子; 小野 洋; 内田 和男; 野崎 眞次; 森崎 弘
Oral presentation, Japanese, 日本結晶学会年会講演要旨集
Nov. 2004 - CBrCl3をドーパント源としたp-InGaAsのMOVPE成長（共著）
加部 正悟; 触澤 宣晶; 小野 洋; 内田和男; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第65回応用物理学会学術講演会講演予講集
Sep. 2004 - 紫外線照射による高品位SiOx膜の作製（共著）
越川 智朗; 木村 誠二; 小野 洋; 内田和男; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第６５回応用物理学会学術講演会講演予講集
Sep. 2004 - Heガス中蒸発法による低誘電率のナノポーラスシリカ膜の作製（共著）
加藤 明宏; Wei Ni; 小野 洋; 内田和男; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第６５回応用物理学会学術講演会講演予講集
Sep. 2004 - Ge超微粒子フローティングゲートMOSキャパシタの作製と電気的特性（共著）
杉本 武; 寺田 力; Somaditya Sen; 小野 洋; 内田和男; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第６５回応用物理学会学術講演会講演予講集
Sep. 2004 - SiOx超微粒子の蒸着による低温シリコン酸化膜の作製（共著）
木村 誠二; 野崎 眞次; 内田 和男; 小野 洋; 森崎 弘; 川崎 卓
Others, Japanese, 電気通信大学共同研究成果発表会
Jun. 2004 - Synthesis, properties and applications of germanium nanocrystals
S. Nozaki
Oral presentation, English, INDO-US Workshop on Nano-Scale Materials: From Science to Technology, Puri
Apr. 2004 - Synthesis, properties and applications of germanium nanocrystals
S. Nozaki
Invited oral presentation, English, INDO-US Workshop on Nano-Scale Materials: From Science to Technology, Puri, International conference
Apr. 2004 - ナノ珪素系粒子の評価と応用
木村誠二; 小野 洋; 野崎眞次; 内田和男; 森崎 弘
Oral presentation, Japanese, 電気通信大学21世紀COEプログラム第1回公開シンポジウム予稿集
Dec. 2003 - パラジウムナノ構造含有薄膜の電気的特性評価
一戸隆久; 正木進; 内田和男; 野崎眞次; 森崎弘
Oral presentation, Japanese, 第２回２１世紀連合シンポジウム
Nov. 2003 - Si超微粒子熱酸化によるナノポーラスシリカ膜の作製(共著)
安富大祐; 木原尚志; 小野 洋; 内田和男; 野崎真次; 森崎 弘; 吉丸正樹
Others, Japanese, 電気通信大学共同研究センター第7回共同研究成果発表会
May 2002 - "固相Siナノクラスターによる半導体メモリー"（共著）
野崎真次; 佐倉 竜太; Puspashree Mishra; 内田和男; 森崎 弘
Invited oral presentation, Japanese, ナノ・インテリジェント材料シンポジウム、未踏科学技術協会・インテリジェント材料フォーラム主催、平成１３年１１月１３日、東京青学会館 （招待講演）
Nov. 2001 - Oxidation of MBE-grown Ge dots on Si and application to nanocrystal memories: Controlled positioning of Ge dots in SiO2
S. Nozaki
Invited oral presentation, English, Si Ge Net Midterm Review Meeting, September 3 -4, 2001, Marseille, France (INVITED), International conference
Sep. 2001 - SiO2超微粒子薄膜のLow-k応用（共著）
木原尚志; 安富大祐; 内田和男; 小野 洋; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第60回半導体・集積回路技術シンポジウム、電気化学会電子材料委員会主催、平成13年6月6-7日、大阪国際交流センター
Jun. 2001 - MOVPE成長GaInP材料物性とGaInP/GaAs HBT DC特性に関する報告（共著）
池上隆幸; 杉山智之; 降矢美保; 小野 洋; 内田和男; 野崎眞次; 森崎 弘
Oral presentation, Japanese, 第48回応用物理学関係連合講演会，明治大学
Mar. 2001 - Si超微粒子からのEL発光（共著）
佐藤慶介; 大場鉄平; 弓野 聡; 岩瀬満雄; 和泉富雄; 庄 善之; 野崎眞次; 森崎 弘
Oral presentation, Japanese, 第48回応用物理学関係連合講演会，明治大学
Mar. 2001 - 銅フタロシアニン／シリコンヘテロ接合ダイオードの特性（共著）
小野 洋; 岩本卓三; 内田和男; 野崎眞次; 伊藤進夫; 森崎 弘
Oral presentation, Japanese, 第48回応用物理学関係連合講演会，明治大学
Mar. 2001 - 超高真空断面走査形トンネル顕微鏡による半導体へテロ界面GaInP/GaAsの観察（共著）
三保基陽; 茶圓 聡; 小野 洋; 内田和男; 野崎眞次; 森崎 弘
Oral presentation, Japanese, 第48回応用物理学関係連合講演会，明治大学
Mar. 2001 - フッ酸処理したSi超微粒子からの赤色発光強度の増大（共著）
佐藤慶介; 岩瀬満雄; 和泉富雄; 庄 善之; 野崎眞次; 森崎 弘
Oral presentation, Japanese, 電気化学会第67回大会講演要旨集, 名古屋大学
Apr. 2000 - 新低誘電材料としての酸化Si超微粒子の作製と評価（共著）
舟崎秀夫; 小野 洋; 内田和男; 野崎眞次; 森崎 弘
Oral presentation, Japanese, 第47回応用物理学関係連合講演会講演予稿集
Mar. 2000 - 全反射X線を用いたSiO2多孔質膜の誘電率測定（共著）
木原尚志; 舟崎秀夫; 伊藤進夫; S. Banerjee; 小野 洋; 内田和男; 野崎眞次; 森崎 弘
Oral presentation, Japanese, 第47回応用物理学関係連合講演会講演予稿集
Mar. 2000 - 水素終端したSi(III)2×1劈開面のSTSによる評価（共著）
西方 誠; 三保基陽; NS. McAlpine; 小野 洋; 内田和男; 野崎眞次; 森崎 弘
Oral presentation, Japanese, 第47回応用物理学関係連合講演会講演予稿集
Mar. 2000 - フッ酸処理したSi超微粒子のEL特性（共著）
佐藤慶介; 杉山陽介; 岩瀬満雄; 和泉富雄; 庄 善之; 野崎眞次; 森崎 弘
Oral presentation, Japanese, 第47回応用物理学関係連合講演会講演予稿集
Mar. 2000 - Drain current suppression in AlGaN/GaN HEMTs（共著）
S. Nozaki; H. Feick; J. Kruger; E. R. Webe
Oral presentation, English, 2000 Workshop on Compound Semiconductors and Devices, 2/20-2/23/00, San Diego, CA, USA
Feb. 2000 - Drain current suppression in AlGaN/GaN HEMTs（共著）
S. Nozaki; H. Feick; J. Kruger; E. R. Webe
Invited oral presentation, English, 2000 Workshop on Compound Semiconductors and Devices, 2/20-2/23/00, San Diego, CA, USA, International conference
Feb. 2000 - CB Characteristics observed in Ge nanocrystalline films prepared by cluster beam evaporation technique（共著）
Souri Banerjee; S. Nozaki; H. Morisaki
Invited oral presentation, English, Proceedings of the 10th International Workshop on Semiconductor Physics of Semiconductor Devices, 12/14-12/18/99, Delhi, India, International conference
Dec. 1999 - 陽極酸化によるポーラスシリコンからのEL強度の増大（共著）
庄 善之; 野崎眞次; 森崎 弘; 岩瀬満雄; 和泉富雄
Oral presentation, Japanese, 第60回応用物理学会学術講演会講演予稿集
Sep. 1999 - SiO2膜中のSi超微粒子の形成（共著）
佐藤慶介; 杉山陽介; 岩瀬満雄; 和泉富雄; 上野武夫; 矢口紀恵; 庄 善之; 野崎眞次; 森崎 弘
Oral presentation, Japanese, 第60回応用物理学会学術講演会講演予稿集
Sep. 1999 - Si超微粒子内の伝導ESR(光照射効果（共著）
杉山陽介; 佐藤慶介; 岩瀬満雄; 和泉富雄; 庄 善之; 野崎眞次; 森崎 弘
Oral presentation, Japanese, 第60回応用物理学会学術講演会講演予稿集
Sep. 1999 - Si超微粒子の形成過程における光音響スペクトル変化（共著）
桑畑周司; 佐藤慶介; 杉山陽介; 岩瀬満雄; 和泉富雄; 武藤信男; 庄 善之; 野崎眞次; 森崎 弘
Oral presentation, Japanese, 第60回応用物理学会学術講演会講演予稿集
Sep. 1999 - Optical properties of tetragonal germanium nanocrystals deposited by the clcester-beam evaporation technique : New light emitting material for future（共著）
S. Nozaki; S. Sato; S. Rath; H. Ono; H. Morisaki
Invited oral presentation, English, Bulletin of Materials Science, International conference
May 1999 - 熱酸化および陽極酸化を行ったポーラスシリコンからの発光（共著）
庄 善之; 野崎眞次; 森崎 弘; 岩瀬満雄; 和泉富雄
Oral presentation, Japanese, 応用物理学会シリコンテクノロジー分科会，第8回研究集会，光るシリコン-プロセス・素子技術の新展開-，東京農工大学
Apr. 1999 - Si超微粒子の発光と常磁性欠陥（共著）
岩瀬満雄; 佐藤慶介; 和泉富雄; 上野武夫; 矢口紀恵; 野崎真次; 森崎 弘
Oral presentation, Japanese, 応用物理学会分科会シリコンテクノロジー：光るシリコンープロセス・素子技術の新展開ー特集号，東京農工大学（東京）
Apr. 1999 - Si微粒子の水素処理による発光特性の変化（共著）
佐藤慶介; 杉山陽介; 岩瀬満雄; 和泉富雄; 庄 善之; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第46回応用物理学関係連合講演会講演予稿集
Mar. 1999 - トリメチルアミンを用いた高周波プラズマCVD法によるGaNの作製（共著）
島袋淳一; 池上隆幸; 内田和男; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第46回応用物理学関係連合講演会講演予稿集
Mar. 1999 - 低誘電材料としてのSi酸化物超微粒子の作製と評価(I)（共著）
道又重臣; 小澤宏之; 舟崎秀夫; 佐藤井一; 小野 洋; 内田和男; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第46回応用物理学関係連合講演会講演予稿集
Mar. 1999 - 銅フタロシアニン分子薄膜の構造と電気特性の膜厚依存性（共著）
宮崎隆誌; 岩本卓三; 野崎真次; 森崎 弘; 伊藤進夫
Oral presentation, Japanese, 第46回応用物理学関係連合講演会講演予稿集
Mar. 1999 - ダイヤモンド薄膜/p-Si構造電極による二酸化炭素の還元I（共著）
曽根崇史; 小野 洋; 木村正光; 野崎真次; 森崎 弘; 湯郷成美
Oral presentation, Japanese, 第46回応用物理学関係連合講演会講演予稿集
Mar. 1999 - ダイヤモンド薄膜/p-Si電極の光電気化学特性評価（共著）
小野 洋; 曽根崇史; 野崎真次; 森崎 弘; 湯郷成美
Oral presentation, Japanese, 電気化学会第66回大会講演要旨集
Mar. 1999 - 半導体ナノクリスタルの電子・光機能とデバイス応用
野崎真次
Oral presentation, Japanese, シンポジウム'99「明日をめざす科学技術
Feb. 1999 - 半導体ナノクリスタルの電子・光機能とデバイス応用
野崎真次
Invited oral presentation, Japanese, シンポジウム'99「明日をめざす科学技術
Feb. 1999 - 固体クラスターの粒子サイズ効果による電子・光機能（共著）
野崎真次; 内田和男; 小野 洋; 森崎 弘
Oral presentation, Japanese, ナノスペースラボ・シンポジウム'99
Jan. 1999 - 固体クラスターの粒子サイズ効果による電子・光機能（共著）
野崎真次; 内田和男; 小野 洋; 森崎 弘
Invited oral presentation, Japanese, ナノスペースラボ・シンポジウム'99
Jan. 1999 - RFスパッタリング法により作成したSi微粒子の欠陥と発光との関係（共著）
佐藤慶介; 杉山陽介; 岩瀬満雄; 和泉富雄; 庄 善之; 野崎真次; 森崎 弘
Others, Japanese, 第9回粒子線の先端的応用技術に関するシンポジウム
Nov. 1998 - 電極材料としてのダイヤモンド薄膜の電気特性（共著）
曽根崇史; 小野 洋; 木村正光; 野崎真次; 森崎 弘; 湯郷成美
Others, Japanese, 第12回ダイヤモンドシンポジウム講演要旨集
Nov. 1998 - Si微粒子のESR法による評価（共著）
佐藤慶介; 杉山陽介; 岩瀬満雄; 和泉富雄; 庄 善之; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第59回応用物理学会学術講演会講演予稿集
Sep. 1998 - ポーラスシリコンにおけるプラズモンエネルギー変化（共著）
佐藤井一; シャーマ・ラス; 秋山深一; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第59回応用物理学会学術講演会講演予稿集
Sep. 1998 - 超音速ジェットノズル付ガス中蒸発法で作製されたSi超微粒子の評価II
鈴木智博; 小野 洋; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第45回応用物理学関係連合講演会講演予稿集
Mar. 1998 - ガス中蒸発法による低誘電率Si酸化膜の作製
小沢 宏之; 小野 洋; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第45回応用物理学関係連合講演会講演予稿集
Mar. 1998 - Germanium nanostructures deposited by the cluster-beam evaporation technique（共著）
S. Nozaki; S. Sato; H. Ono; H. Morisaki
Invited oral presentation, English, The 3rd International Symposium on Advanced Physical Fields, Tsukuba, Japan, Fev. 18-20，1998（invited），Proceedings ofthe 3rd International Symposium on Advanced Physical Fields, N. Koguch et al.（ed），J. Surface Analysis,, International conference
Feb. 1998 - クラスタービーム蒸着法による正方晶ゲルマニウムナノクリスタルの作製と物性評価
野崎真次
Others, Japanese, 日本学術振興会荷電粒子ビームの工業への応用第132委員会 第139回研究会
1998 - 超音速ジェットノズル付ガス中蒸発法で作製されたSi超微粒子の評価II（共著）
鈴木智博; 小野 洋; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第45回応用物理学関係連合講演会講演予稿集
1998 - ガス中蒸発法による低誘電率Si酸化膜の作製（共著）
小澤宏之; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第45回応用物理学関係連合講演会講演予稿集
1998 - クラスタービーム蒸着法による正方晶ゲルマニウムナノクリスタルの作製と物性評価
野崎真次
Others, Japanese, 日本学術振興会荷電粒子ビームの工業への応用第132委員会 第139回研究会
1998 - 中性クラスター形成による新材料創性ー新ゲルマニウム材料の誕生
野崎真次; 佐藤井一; 小野 洋; 森崎 弘
Others, Japanese, ナノスペースラボ・シンポジウム'97
Oct. 1997 - 中性クラスター形成による新材料創性ー新ゲルマニウム材料の誕生
野崎真次; 佐藤井一; 小野 洋; 森崎 弘
Invited oral presentation, Japanese, ナノスペースラボ・シンポジウム'97
Oct. 1997 - MBE法によるInAs量子ドット構造の選択的自己形成
長谷川 久; 脇 英司; 山口浩一; 野崎真次
Oral presentation, Japanese, 第44回応用物理学関係連合講演会講演予稿集
Mar. 1997 - Si微粒子のESR
渡辺祥聡; 庄 善之; 和泉富雄; 小沢宏之; 佐藤井一; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第44回応用物理学関係連合講演会講演予稿集
Mar. 1997 - クラスタービーム蒸着法で作製したGeクラスター膜の電気的特性
川手俊矢; 佐藤井一; 秋山深一; 道又重臣; 野崎真次; 森崎 弘; 小日向貢
Oral presentation, Japanese, 電気化学会第64回大会講演要旨集
Mar. 1997 - クラスタービーム法によるGeナノ構造薄膜のラマン分光評価
黒下恭志; 大河原淳平; 岩瀬満雄; 若木守明; 野崎真次; 森崎 弘
Oral presentation, Japanese, 電気化学会第64回大会講演要旨集
Mar. 1997 - RFスパッタ法で作製したSiドープSiO2多層膜反射鏡の反射率特性
剣持大介; 佐藤井一; 山田剛之; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第44回応用物理学関係連合講演会講演予稿集
Mar. 1997 - SiドープSiO2ガラスからのエレクトロルミネッセンス
矢部智一; 安原昌樹; 小野 洋; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第44回応用物理学関係連合講演会講演予稿集
Mar. 1997 - ダイアモンド薄膜の光電気化学的特性II
小野 洋; 野崎真次; 森崎 弘; 湯郷成美
Oral presentation, Japanese, 第44回応用物理学関係連合講演会講演予稿集
Mar. 1997 - トリメチルアミン・アンモニア混合プラズマ中のイオン種
小林 哲; 島袋淳一; 野崎真次; 森崎 弘; 正木 進
Oral presentation, Japanese, 第44回応用物理学関係連合講演会講演予稿集
Mar. 1997 - クラスタービーム蒸着法で作製したテトラゴナルGeナノ構造の価電子帯構造
佐藤井一; 川出俊也; 秋山深一; 道又重臣; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第44回応用物理学関係連合講演会講演予稿集
Mar. 1997 - クラスタービーム法によるテトラゴナルGeナノ構造新材料の創製（共著）
川出俊矢; 佐藤井一; 野崎真次; 森崎 弘; 岩瀬満雄
Others, Japanese, 粒子線技術開発定例研究会資料集 電気化学会
1997 - クラスタービーム蒸着法で作製したGeクラスター膜の電気特性（共著）
佐藤井一; 野崎真次; 森崎 弘; 岩瀬満雄
Others, Japanese, 粒子線を用いた次世代材料プロセス技術論文集 電気化学会
1997 - Size reduction of germanium nanocrystals by oxidation
S. Rath; H. Ono; S. Nozaki; H. Morisaki
Others, English, 電子材料研究会 電気学会
1997 - クラスタービーム蒸着法で作製したSiナノ微粒子の光酸化（共著）
川出俊矢; 室井崇臣; 佐藤井一; 野崎真次; 森崎 弘
Others, Japanese, 第8回粒子線の先端的応用技術に関するシンポジウム 電気化学会
1997 - Ge超微粒子薄膜のX線回折と全反射法による評価（共著）
二宮秀之; 伊藤進夫; 佐藤井一; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第58回応用物理学会学術講演予稿集
1997 - ダイアモンド薄膜の光電気化学的特性II（共著）
小野 洋; 曽根崇史; 森谷恵介; 野崎真次; 森崎 弘; 湯郷成美
Oral presentation, Japanese, 第58回応用物理学会学術講演会講演予稿集
1997 - クラスタービーム蒸着法で作製したテトラゴナルGeナノ構造の光学的評価（共著）
佐藤井一; 川出俊矢; 秋山深一; 道又重臣; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第58回応用物理学会学術講演会講演予稿集
1997 - 陽極酸化したポーラスシリコンのEL特性（共著）
八巻哲也; 小野 洋; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第58回応用物理学会学術講演会講演予稿集
1997 - Germanium nanostructures deposited by the cluster-beam evaporation technique(共著)
S. NOZAKI; S. SATO; H. ONO; H. MORISAKI; M. IWASE
Invited oral presentation, English, Nuclear Instruments and Methods in Physics Research B, International conference
1997 - Germanium nanostractures deposited by the Cluster-beam evaporation technique（共著）
Shinji Nozaki; S. Sato; H. Ono; H. Morisaki
Invited oral presentation, English, Physics, Chemistry and Application of Nanostructures : Review and Short Notes to Nanomeeting '97, World Scientific, International conference
1997 - Germanium nanostructures deposited by the cluster-beam evaporation technique（共著）
Shinji Nozaki; S, Sato; H. Ono; H. Morisaki
Invited oral presentation, English, Physics of Semiconductor Nanostructures, Narosa Publishing House, International conference
1997 - クラスタービーム蒸着法で作製したSiナノ微粒子の光酸化
川手俊矢; 室井崇臣; 佐藤井一; 野崎真次; 森崎 弘
Others, Japanese, 第8回粒子線の先端的応用技術に関するシンポジウム
1997 - SiドープSiO2多層膜を用いた光共振器の作製とその光学的評価
剣持大介; 佐藤井一; 小野 洋; 野崎真次; 森崎 弘
Others, Japanese, 電子情報学会信学技報
1997 - クラスタービーム蒸着法で作製したGeクラスター膜の構造変化
川手俊矢; 佐藤井一; 野崎真次; 森崎 弘; 岩瀬満雄
Oral presentation, Japanese, 第７回粒子線の先端的応用技術に関するシンポジウム
Nov. 1996 - クラスタービーム法によるゲルマニウム超微粒子の作製と特性評価
野崎真次; 佐藤井一; 森崎 弘; 高橋 清
Oral presentation, Japanese, 第57回応用物理学会学術講演会講演予稿集
Sep. 1996 - クラスタービーム法によるゲルマニウム超微粒子の作製と特性評価
野崎真次; 佐藤井一; 森崎 弘; 高橋 清
Invited oral presentation, Japanese, 第57回応用物理学会学術講演会講演予稿集
Sep. 1996 - クラスタービーム法によるGeナノ構造薄膜のラマン分光・ATR評価
黒下恭志; 大河原淳平; 岩瀬満雄; 若木守明; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第57回応用物理学会学術講演会講演予稿集
Sep. 1996 - クラスタービーム法によるFeSixクラスター膜（?氈j
大河原淳平; 岩瀬満雄; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第57回応用物理学会学術講演会講演予稿集
Sep. 1996 - ポーラスシリコンおよびSiドープSiO2薄膜の欠陥構造（ESR評価）
庄善之; 佐藤慶介; 岩瀬満雄; 和泉富雄; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第57回応用物理学会学術講演会講演予稿集
Sep. 1996 - 超音速ジェットノズル付ガス中蒸発法で作製されたSi超微粒子の評価
小野 洋; 鈴木智博; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第57回応用物理学会学術講演会講演予稿集
Sep. 1996 - HF処理したSi超微粒子からのPLとポーラスSiからのPLの関係
佐藤井一; 高倉陽一; 野崎真次; 森崎 弘
Oral presentation, Japanese, 電気化学会第63回大会講演要旨集
Apr. 1996 - PN接合ポーラスシリコンのエレクトロルミネッセンス特性
新田展崇; 八巻哲也; 小野 洋; 野崎真次; 森崎 弘
Oral presentation, Japanese, 電気化学会第63回大会講演要旨集
Apr. 1996 - はじめに：半導体ナノクリスタルの量子物理とデバイス応用
野崎真次
Oral presentation, Japanese, 第43回応用物理学関係連合講演会講演予稿集
Mar. 1996 - はじめに：半導体ナノクリスタルの量子物理とデバイス応用
野崎真次
Invited oral presentation, Japanese, 第43回応用物理学関係連合講演会講演予稿集
Mar. 1996 - トリメチルアミンを用いたプラズマCVD法によるCN膜の作製
小林 哲; 宮崎恵子; 野崎真次; 森崎 弘; 福井繁雄; 正木 進
Oral presentation, Japanese, 第43回応用物理学関係連合講演会講演予稿集
Mar. 1996 - Heガス中蒸発した水素終端Si微粒子からのPL
高倉陽一; 佐藤井一; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第43回応用物理学関係連合講演会講演予稿集
Mar. 1996 - Deposiyion of C1-xNx thin films by RF glow discharge decomposition of trimethylamine
小林哲; 野崎真次; 森崎 弘
Oral presentation, Japanese, 電気化学会第63回学術大会シンポジウム 粒子線を用いた次世代材料プロセス技術論文集
1996 - クラスタービーム法で作製したテトラゴナルGe超微粒子の光物性(共著)
佐藤井一; 野崎真次; 森崎 弘
Others, Japanese, The Institute of Ekcrronics,Information and Communication Engineers,Technical Report
1996 - クラスタービーム蒸着法で作製したテトラゴナルGeクラスター膜の相転移(共著)
佐藤井一; 野崎真次; 森崎 弘
Oral presentation, Japanese, 電気化学会第63回学術大会/シンポジウム 粒子線を用いた次世代材料プロセス技術論文集
1996 - Molecular Beam Epitaxial Growth of Copper Phthalocyanine On Si(111)
T. Kunugi; S. Nozaki; H. Morisaki; K. Takahashi
Oral presentation, English, Japan IEMT Symposium
Dec. 1995 - クラスタービーム法によるテトラゴナルGeナノ構造の光酸化
佐藤井一; 野崎真次; 森崎 弘; 高橋 清
Oral presentation, Japanese, 日本MRS第7回年次総会学術シンポジウム
Dec. 1995 - 銅をメッキしたポーラスSi電極によるCO2の光電気化学的還元
山田真人; 小野 洋; 野崎真次; 森崎 弘
Oral presentation, Japanese, 電気化学秋季大会講演要旨集
Sep. 1995 - イオンビームスパッタ法によるC1-xNx薄膜の作製
小林 哲; 野崎真次; 森崎 弘; 福井繁雄; 正木 進
Others, Japanese, 電気化学協会第62回学術大会講演 粒子線を用いた次世代材料プロセス技術論文集
Apr. 1995 - クラスタービーム法によるGeナノ構造の評価
岩瀬満雄; 佐藤井一; 小野 洋; 野崎真次; 森崎 弘
Oral presentation, Japanese, 電気化学協会第62回学術大会講演要旨集
Apr. 1995 - ケミカルエッチング法による多孔質Siのフォトルミネッセンススペクトルの温度依存性
秋永成信; 成澤稔裕; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第42回応用物理学関係連合講演会講演予稿集
Mar. 1995 - 水素ガス中蒸発したGe超微粒子の光酸化（２）ー熱処理による発光のレッドシフト
伝田 敦; 佐藤井一; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第42回応用物理学関係連合講演会講演予稿集
Mar. 1995 - クラスタービーム法によるGeクラスター膜（３）ー膜構造ー
佐藤井一; 岩瀬満雄; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第42回応用物理学関係連合講演会講演予稿集
Mar. 1995 - クラスタービーム法によるGeクラスター膜（４）ー可視領域発光ー
佐藤井一; 岩瀬満雄; 野崎真次; 伝田 敦; 森崎 弘
Oral presentation, Japanese, 第42回応用物理学関係連合講演会講演予稿集
Mar. 1995 - イオンビームスパッタ法によるC1-xNx薄膜の作製
小林 哲; 福井繁雄; 正木 進; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第42回応用物理学関係連合講演会講演予稿集
Mar. 1995 - ポーラスシリコン層内の非発光中心
庄 善之; 島崎美恵子; 岩瀬満雄; 和泉富雄; 一戸隆久; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第42回応用物理学関係連合講演会講演予稿集
Mar. 1995 - SiドープSiO2ガラスのESR
片野寿昭; 庄 善之; 岩瀬満雄; 和泉富雄; 中村 仁; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第42回応用物理学関係連合講演会講演予稿集
Mar. 1995 - 選択成長における微細ストライフプ構造の自己制限機構(共著)
山口浩一; 野崎真次
Others, Japanese, 電気学会電子材料研究会資料
1995 - Si/C複合ターゲットを用いたIBSD法によるSi1-xCx薄膜
小林 哲; 福井繁雄; 正木 進; 野崎真次; 森崎 弘
Others, Japanese, Process of the 5th Symposium on Beam Engineering of Advanced Material Synthesis
Nov. 1994 - 多孔質シリコンからの可視領域発光における可逆的な波長変化
一戸隆久; 新田展崇; 小野 洋; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第５５回応用物理学会学術講演会講演予稿集
Sep. 1994 - SiドープSiO2ガラスの可視領域発光
中村 仁; 矢部智一; 小野 洋; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第55回応用物理学会学術講演会講演予稿集
Sep. 1994 - 水素ガス中蒸発したGe超微粒子の光酸化
佐藤井一; 伝田 敦; 小野 洋; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第55回応用物理学会学術講演会講演予稿集
Sep. 1994 - クラスタービーム法によるGeクラスター膜（１）
岩瀬満雄; 佐藤井一; 小野 洋; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第55回応用物理学会学術講演会講演予稿集
Sep. 1994 - クラスタービーム法によるGeクラスター膜（２）
佐藤井一; 岩瀬満雄; 小野 洋; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第55回応用物理学会学術講演会講演予稿集
Sep. 1994 - 半導体微粒子の光触媒効果と光エネルギー変換への応用
山田真人; 小野 洋; 野崎真次; 森崎 弘
Oral presentation, Japanese, 電気化学秋期大会講演要旨集
Sep. 1994 - 原子オーダ構造制御の現状と展望
野崎真次
Others, Japanese, 電気学会技術報告書
Jul. 1994 - ガス中蒸発法Siからの青色発光機構I
佐藤井一; 小野 洋; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第４１回応用物理学関係連合講演会講演予稿集
Mar. 1994 - 電解溶液種による多孔質シリコンの可視発光への影響
一戸隆久; 小野 洋; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第55回応用物理学会学術講演会講演予稿集
Mar. 1994 - 酸素含有シリコンナノ構造からの高強度青色発光と発光機構(共著)
小野 洋; 野崎真次; 森崎 弘
Others, Japanese, 電気学会研究会資料
1994 - Research Activities on Intelligent Materials in Japan(共著)
K. Takahshi; S. Nozaki
Invited oral presentation, English, Proceedings of the 2nd International Conference on Intelligent Materials, International conference
1994 - 酸素含有シリコンナノ構造からの高強度青色発光と発光機構(共著)
小野 洋; 野崎真次; 森崎 弘
Others, Japanese, 電気学会研究会資料
1994 - 酸化膜被覆白金シリサイド電極－水溶液中でのイオンの状態密度分布の温度依存性I
小野 洋; 東 洋一; 野崎真次; 森崎 弘
Oral presentation, Japanese, 電気化学秋期大会講演要旨集
Oct. 1993 - 材料科学の遺伝子制御とナノスペースラボ
野崎真次; 森崎 弘; 高橋 清
Oral presentation, Japanese, 第５４回応用物理学会学術講演会講演予稿集
Sep. 1993 - 材料科学の遺伝子制御とナノスペースラボ
野崎真次; 森崎 弘; 高橋 清
Invited oral presentation, Japanese, 第５４回応用物理学会学術講演会講演予稿集
Sep. 1993 - ガス中蒸発法Siからの青色発光
小野 洋; 佐藤井一; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第５４回応用物理学会学術講演会講演予稿集
Sep. 1993 - スパッタ法によるSi添加SiO2薄膜の可視光発光
小野 洋; 野間重雄; 中村 仁; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第５４回応用物理学会学術講演会講演予稿集
Sep. 1993 - Visible Light Emission from Si-Doped SiO2 Thin Film Deposited by Sputtering
野間重雄; 中村 仁; 小野 洋; 野崎真次; 森崎 弘
Others, Japanese, 電子情報通信学会信学技報
1993 - MOMBE法によるInGaAsへのカーボンの高濃度ドーピング
白樫淳一; 宮野暁史; 吉岡ヒカルド; 野崎真次; 徳光永輔; 小長井 誠; 高橋 清
Oral presentation, Japanese, 第５３回応用物理学会学術講演会講演予稿集
Apr. 1992 - Design of the 21st-century electron devices with intelligent materials（共著）
Shinji Nozaki; K. Takahashi
Invited oral presentation, English, Proceedings of the 1st International Conference on Intelligent Materials, International conference
Mar. 1992 - カーボンドープp形GaAs中のBe拡散
徳光永輔; 白樫淳一; 野崎真次; 小長井 誠; 高橋 清; 松本和彦; J. Murray
Oral presentation, Japanese, 第３９回応用物理学関係連合講演会講演予稿集
Mar. 1992 - MOMBE法による高濃度カーボンドープp形GaInAs(IV)
白樫淳一; 鹿島秀夫; 野崎真次; 徳光永輔; 小長井 誠; 高橋 清
Oral presentation, Japanese, 第３９回応用物理学関係連合講演会講演予稿集
Mar. 1992 - MOMBE法による高濃度カーボンドープGaAsの熱的安定性
野崎真次; 山田 巧; 白樫淳一; 徳光永輔; 小長井 誠; 高橋 清; H.Sohn; E.R. Weber
Oral presentation, Japanese, 第５２回応用物理学会学術講演会講演予稿集
Oct. 1991 - MOMBE法による高濃度カーボンドープp形GaAs/InGaAs超格子
白樫淳一; 鹿島秀夫; 斉 鳴; 野崎真次; 徳光永輔; 小長井 誠; 高橋 清
Oral presentation, Japanese, 第５２回応用物理学会学術講演会講演予稿集
Oct. 1991 - MOMBE法による高濃度カーボンドープp形InGaAs(III)
白樫淳一; 山田 巧; 野崎真次; 三宅隆二; 風呂 進; 小島康寿; 徳光永輔; 小長井 誠; 高橋 清
Oral presentation, Japanese, 第３８回応用物理学関係連合講演会講演予稿集
Mar. 1991 - MOMBE法による高濃度カーボンドープp形GaAsのTEM観察
山田 巧; 野崎真次; T.George; 深町太一; 三宅隆二; 小長井 誠; 高橋 清
Oral presentation, Japanese, 第５１回応用物理学会学術講演会講演予稿集
Sep. 1990 - MOMBE法による高濃度カーボンドープp形GaInAs(II)
赤塚 健; 山田 巧; 三宅隆二; 野崎真次; 小長井 誠; 高橋 清
Oral presentation, Japanese, 第５１回応用物理学会学術講演会講演予稿集
Sep. 1990 - MOMBE法による高濃度カーボンドープp形GaAsを用いたpn接合特性
三宅隆二; 野崎真次; 中川直之; 赤塚 健; 小長井 誠; 高橋 清
Oral presentation, Japanese, 第５１回応用物理学会学術講演会講演予稿集
Sep. 1990 - Pseudo-Hetero-epitaxial Problems in Heavily Carbon-Doped GaAs Grown on GaAs Substrate by MOMBE
S. Nozaki; R. Miyake; T. Akatsuka; T. Yamada; T. Fukamachi; K. Saito; M. Konagai; K. Takahashi
Oral presentation, English, The 32nd Electronic Materials Conf.
Jun. 1990 - 超高濃度カーボンドープp形GaAsの結晶性評価（共著）
深町太一; 山田 巧; 野崎真次; 三宅隆二; 小長井誠; 高橋 清
Others, Japanese, 電子情報通信学会研究会資料(ED90-107)
1990 - 超高濃度カーボンドープp形GaAsの結晶性評価（共著）
深町太一; 山田 巧; 野崎真次; 三宅隆二; 小長井誠; 高橋 清
Others, Japanese, 電子情報通信学会研究会資料(ED90-107)
1990 - カーボンドープp形GaAs、InGaAsのデバイスへの応用に関する検討（共著）
三宅隆二; 野崎真次; 山田 巧; 神山さとみ; 白樫淳一; 小長井誠; 高橋清
Others, Japanese, 電子情報通信学会研究会(ED90-108)
1990 - カーボンドープp形GaAs、InGaAsのデバイスへの応用に関する検討（共著）
三宅隆二; 野崎真次; 山田 巧; 神山さとみ; 白樫淳一; 小長井誠; 高橋清
Others, Japanese, 電子情報通信学会研究会(ED90-108)
1990 - GaAs/GaAsP superlattice effects on GaAs/Si grown by MOCVD（共著）
M. Umeno; T. Soga; T. Egawa; Shinji Nozaki; T. Jimbo
Invited oral presentation, English, The 7th International Workshop on Future Electron Devices, International conference
Oct. 1989 - MOCVD法によるSi上GaAsの高抵抗化
野崎真次; 能登宣彦; Albert Wu; 安形保則; 江川孝志; 曽我哲夫; 神保孝志; 梅野正義
Oral presentation, Japanese, 第５０回応用物理学会学術講演会講演予稿集
Sep. 1989 - 歪超格子中間層を用いたSi上へのGaAsの結晶成長
曽我哲夫; 野崎真次; 蒋 仲埜; 安形保則; 西川廣信; 神保孝志; 梅野正義
Oral presentation, Japanese, 第５０回応用物理学会学術講演会講演予稿集
Sep. 1989 - MOMBE法による高濃度カーボンドープp形GaInAs-GaAsとの格子整合
赤塚 健; 三宅隆二; 野崎真次; 山田 巧; 徳光永輔; 小長井 誠; 高橋 清
Oral presentation, Japanese, 第５０回応用物理学会学術講演会講演予稿集
Sep. 1989 - MOMBE法による高濃度カーボンドープp形GaAsを用いたpn 接合特性
三宅隆二; 野崎真次; 赤塚 健; 山田 巧; 徳光永輔; 小長井 誠; 高橋 清
Oral presentation, Japanese, 第５０回応用物理学会学術講演会講演予稿集
Sep. 1989 - Etch Pits of MOCVD-Grown GaAs on Si with III-V Compound Intermediate Layers
T. Soga; H. Nishikawa; S. Nozaki; N. Noto; T. Jimbo; M. Umeno
Oral presentation, English, Int. Conf. on the Science and Technology of Defect Control in Semiconductors
Sep. 1989 - Surface Morphology and Crystal Quality of MOCVD-Grown GaAs on Si with III-V Alloy Intermediate Layers
T. Soga; S. Nozaki; N. Noto; T. Jimbo; M. Umeno
Oral presentation, English, The 7th Int. Conf. on Crystal Growth
Aug. 1989 - MOCVD法で成長したSi基板上GaAsに及ぼす成長条件（成長温度,V/III比)の影響
野崎真次; 能登宣彦; 板倉秀明; 曽我哲夫; 神保孝志; 梅野正義
Others, Japanese, 電子情報通信学会
May 1989 - MOCVD法で成長したSi基板上GaAsに及ぼす成長条件（成長温度,V/III比)の影響
野崎真次; 能登宣彦; 板倉秀明; 曽我哲夫; 神保孝志; 梅野正義
Invited oral presentation, Japanese, 電子情報通信学会
May 1989 - Si基板上へのシングルドメインGaAs,GaPの成長
梅野正義; 神保孝志; 曽我哲夫; 野崎真次; 能登宣彦
Others, Japanese, 応用物理学会結晶工学分科会第９２回研究会
May 1989 - Si基板上へのシングルドメインGaAs,GaPの成長
梅野正義; 神保孝志; 曽我哲夫; 野崎真次; 能登宣彦
Invited oral presentation, Japanese, 応用物理学会結晶工学分科会第９２回研究会
May 1989 - MOCVD法によるSi上GaAsのV/III依存性
野崎真次; 能登宣彦; 岡田昌彦; 安形保則; 江川孝志; 曽我哲夫; 神保孝志; 梅野正義
Oral presentation, Japanese, 第３６回応用物理学関係連合講演会講演予稿集
Apr. 1989 - GaAs on Siの選択エピタキシャル成長(II)
曽我哲夫; 多田仁史; 野崎真次; 能登宣彦; 神保孝志; 梅野正義
Oral presentation, Japanese, 第３６回応用物理学関係連合講演会講演予稿集
Apr. 1989 - MOCVD法によるGaAs /Siの成長温度依存性
田岡峰樹; 岡田昌彦; 野崎真次; 能登宣彦; 曽我哲夫; 神保孝志; 梅野正義
Oral presentation, Japanese, 第３６回応用物理学関係連合講演会講演予稿集
Apr. 1989 - MOCVD法による中間層を用いて成長したGaAs/Siの結晶性と電気的特性
江川孝志; 野崎真次; 能登宣彦; 曽我哲夫; 神保孝志; 梅野正義
Oral presentation, Japanese, 第３６回応用物理学関係連合講演会講演予稿集
Apr. 1989 - Si基板上GaAsに及ぼすγ線照射の影響
今泉 充; 能登宣彦; 野崎真次; 曽我哲夫; 神保孝志; 梅野正義
Oral presentation, Japanese, 第３６回応用物理学関係連合講演会講演予稿集
Apr. 1989 - AlGaP中間層を用いたSi上GaAs成長(II)
能登宣彦; 野崎真次; T. George; 安形保則; 江川孝志; 曽我哲夫; 神保孝志; 梅野正義
Oral presentation, Japanese, 第３６回応用物理学関係連合講演会講演予稿集
Apr. 1989 - Si上へのGaAsの結晶成長とそのヘテロ接合特性
曽我哲夫; 江川孝志; 野崎真次; 能登宣彦; 神保孝志; 梅野正義
Others, Japanese, 電子情報通信学会研究会資料(SDM88-140)
Jan. 1989 - Crystal growth of GaAs on Si using III-V alloy intermediate layer（共著）
M. Umeno; T. Jimbo; T. Soga; T. Egawa; Shinji Nozaki; N. Noto
Invited oral presentation, English, 8th Record of Alloy Semiconductor Physics and Electronics Symposium, International conference
1989 - GaAs-on-Si for optical interconnections（共著）
Shinji Nozaki; J. R. Carruthers
Others, English, 電気学会電子材料、光・量子デバイス合同研究会資料(EFM-88-39)
Dec. 1988 - GaAs-on-Si for optical interconnections（共著）
Shinji Nozaki; J. R. Carruthers
Invited oral presentation, English, 電気学会電子材料、光・量子デバイス合同研究会資料(EFM-88-39)
Dec. 1988 - Characterization of GaAs Schottky Diodes Fabricated on Si Substrate Using Strained Layer Superlattice by MOCVD
T. Egawa; T. Tada; S. Nozaki; N. Noto; T. Soga; T. Jimbo; M. Umeno
Oral presentation, English, The 2nd Int. Conf. on Formation of Semiconductor Interfaces
Nov. 1988 - MOCVD法によるSi上GaAsのオレンジピールモフォロジ
野崎真次; 能登宣彦; 岡田昌彦; 安形保則; 江川孝志; 曽我哲夫; 神保孝志; 梅野正義
Oral presentation, Japanese, 第４９回応用物理学会学術講演会講演予稿集
Oct. 1988 - AlGaP中間層を用いたSi上GaAs成長
能登宣彦; 野崎真次; 安形保則; 江川孝志; 曽我哲夫; 神保孝志; 梅野正義
Oral presentation, Japanese, 第４９回応用物理学会学術講演会講演予稿集
Oct. 1988 - MOCVD法により成長したGaAs/SiのSchottky特性
江川孝志; 能登宣彦; 野崎真次; 安形保則; 曽我哲夫; 神保孝志; 梅野正義
Oral presentation, Japanese, 第４９回応用物理学会学術講演会講演予稿集
Oct. 1988 - GaAs on Siの接合特性
曽我哲夫; 江川孝志; 野崎真次; 能登宣彦; 今泉 充; 神保孝志; 梅野正義
Oral presentation, Japanese, 第４９回応用物理学会学術講演会講演予稿集
Oct. 1988
Courses
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ソニーセミコンダクターソリューションズ, 研究助成
22 Jun. 2018 - 31 Mar. 2019 - 高効率太陽光発電用レクテナの開発
科学技術振興機構, 委託研究
01 Oct. 2013 - 30 Mar. 2019 - Design and fabrication of the neural network circuit using oxide-semiconductor ReRAM devices
日本学術振興会, 調査研究
23 May 2018 - 30 Jun. 2018 - Hydrothermal Synthesis of Oxide Semiconductor Nanomaterials and Improvement by Post-UV Oxidation
日本学術振興会, 調査研究
15 Dec. 2017 - 12 Feb. 2018
Industrial Property Rights
- 整流素子
Patent right, 野崎眞次, 内田和男, 黒川真吾, 古川 実, 白土 正, PCT/JP2013/067564, Date applied: 26 Jun. 2013, 電気通信大学、日本電業工作（株）, WO2014/207853, Date announced: 31 Dec. 2014 - 整流素子
Patent right, 野崎眞次, 内田和男, 黒川真吾, 古川 実, 白土 正, 2012-094148, Date applied: 17 Apr. 2012, 国立大学法人電気通信大学、日本電業工作株式会社, 5607676, Date issued: 05 Sep. 2014 - 酸化膜形成方法、MOSデバイス製造方法、MOSトランジスタ製造方法、SiOx粉末、及びSiOx粉末製造方法
Patent right, 野崎眞次, 内田和男, 木村誠二, 後藤博一, 柳原将貴, 伊吹山 正浩, 特願2007-208641, Date applied: 09 Aug. 2007, 電通大、サンケン電気（株）、電気化学工業（株）, 特開2009-41080, Date announced: 26 Feb. 2009, 特許第5221075号, Date issued: 15 Mar. 2013 - 発光素子の製造方法
Patent right, 内藤寛人, 内田和男, 野崎眞次, 特願2007-203446, Date applied: 03 Aug. 2007, The University of Electro-Communications, 2008-60561, Date announced: 13 Mar. 2008, 特許第5196224号, Date issued: 15 Feb. 2013 - 結晶質シリコン内在SiOx成形体の製造方法とその用途
Patent right, 野崎眞次, 内田和男, 森崎 弘, 川崎 卓, 伊吹山 正浩, 特願2004-280053, Date applied: 27 Sep. 2004, The University of Electro-Communications, 特開2006-89356, Date announced: 06 Apr. 2006, 特許第4966486号, Date issued: 06 Apr. 2012 - Process for producing SiOx particles
Patent right, Shinji Nozaki, Kazuo Uchida, Hiroshi Morisaki, Takashi Kawasaki, Masahiro Ibukiyama, PCT/JP2005/017466 11/663,586(USfiling), Date applied: 22 Sep. 2005, The University of Electro-Communications, Denki Kagaku Kogyo Kabushiki Kaisha, WO2006/035663, Date announced: 06 Apr. 2006, US 7,803,340, Date issued: 28 Sep. 2010 - 透明導電性成形物およびその製造方法
Patent right, 野崎眞次, 内田和男, 森崎 弘, 木村誠二, 川崎 卓, 特願2005-160930, Date applied: 01 Jun. 2005, 電気化学工業、電気通信大学, 特許第4570152号, Date issued: 20 Aug. 2010 - 発光ダイオードおよびその製造方法、発光ダイオードアレイ
Patent right, 内田和男, 森崎 弘, 野崎眞次, 2008-27725, Date applied: 07 Feb. 2008, Sojo University, Faculty of Engineering, Department of Nanoscience, 2009-188249, Date announced: 20 Aug. 2009 - 白色LED装置及びその製造方法
Patent right, 内田和男, 森崎 弘, 野崎眞次, 杉山智之, 特願2007-300744, Date applied: 20 Nov. 2007, Sojo University, Faculty of Engineering, Department of Nanoscience, 2009-147312, Date announced: 02 Jul. 2009 - 酸化膜形成方法、MOSデバイス製造方法、MOSトランジスタ製造方法、SiOx粉末、及びSiOx粉末製造方法
Patent right, 野崎眞次, 内田和男, 木村誠二, 後藤博一, 柳原将貴, 伊吹山正浩, 特願2007-208641, Date applied: 09 Aug. 2007, The University of Electro-Communications, 2009-41080, Date announced: 26 Feb. 2009 - 発光素子およびその製造方法
Patent right, 内田和男, 野崎眞次, 加藤匡也, 2007-170557, Date applied: 28 Jun. 2007, Sojo University, Faculty of Engineering, Department of Nanoscience, 2009-10191, Date announced: 15 Jan. 2009 - バイポーラトランジスタ、マルチフィンガーバイポーラトランジスタ、バイポーラトランジスタ製造用エピタキシャル基板、及びバイポーラトランジスタの製造方法
Patent right, 本城和彦, 内田和男, 加藤修一, 森崎 弘, 野崎眞次, 一戸隆久, -, Sojo University, Faculty of Engineering, Department of Nanoscience, 特許第3942984号, Date issued: 13 Apr. 2007 - 発光素子
Patent right, 能登宣彦, 山田雅人, 野崎眞次, 内田和男, 森崎 弘, -, 信越化学、ナノテコ, 特許第3872398号, Date issued: 27 Oct. 2006 - SiOx粉末の製造方法、SiOx粉末からなる膜
Patent right, 野崎眞次, 内田和男, 森崎 弘, 川崎 卓, 伊吹山正浩, -, 電気化学工業、電気通信大学, 特許第3868396号, Date issued: 20 Oct. 2006 - 発光素子、およびその製造方法
Patent right, 内藤寛人, 内田和男, 野崎眞次, 特願2006-213878, Date applied: 04 Aug. 2006, The University of Electro-Communications - 発光素子
Patent right, 能登宣彦, 山田雅人, 遠藤正久, 池田 均, 野崎眞次, 内田和男, 森崎 弘, -, 信越化学、ナノテコ, 特許第3814151号, Date issued: 09 Jun. 2006 - SiOx粒子の製造法
Patent right, 野崎眞次, 内田和男, 森崎 弘, 川崎 卓, 伊吹山 正浩, -, The University of Electro-Communications, WO 2006/035663 A1, Date announced: 06 Apr. 2006 - SiOx粒子の製造法
Patent right, SiOx粒子の製造法, PCT/JP2005/17466, Date applied: 22 Sep. 2005, 電気化学工業、電気通信大学 - バイポーラトランジスタ、マルチフィンガーバイポーラトランジスタ、バイポーラトランジスタ製造用エピタキシャル基板、及びバイポーラトランジスタの製造法
Patent right, 特許出願2003-283995, Date applied: 31 Jul. 2003, 特許公開2005-51164, Date announced: 24 Feb. 2005 - 白色発光ダイオード
Patent right, 特許出願2004-319954, Date applied: 02 Nov. 2004 - 結晶質シリコン内在SiOx成形体の製造方法とその用途
Patent right, 特許出願2004-280053, Date applied: 27 Sep. 2004 - 発光素子及び発光素子の製造方法
Patent right, 特許出願2003-23480, Date applied: 31 Jan. 2003, 特許公開2004-235509, Date announced: 19 Aug. 2004 - 発光素子及び発光素子の製造方法
Patent right, 特許出願2002-378578, Date applied: 26 Dec. 2002, 特許公開2004-214232, Date announced: 29 Jul. 2004 - 発光素子及びその製造方法
Patent right, 特許出願2002-349259, Date applied: 29 Nov. 2002, 特許公開2004-200184, Date announced: 15 Jul. 2004 - 発光素子及びその製造方法
Patent right, 特許出願2003-363363, Date applied: 23 Oct. 2003, 特許公開2004-165654, Date announced: 10 Jun. 2004 - 発光素子及び発光素子の製造方法
Patent right, 特許出願2002-308989, Date applied: 23 Oct. 2002, 特許公開2004-146541, Date announced: 20 May 2004 - 発光素子の製造方法及び発光素子
Patent right, 特許出願2002-308956, Date applied: 23 Oct. 2002, 特許公開2004-146537, Date announced: 20 May 2004 - 発光素子の製造方法及び発光素子
Patent right, 特許出願2002-230343, Date applied: 07 Aug. 2002, 特許公開2004-071896, Date announced: 04 Mar. 2004 - 発光素子及び発光素子の製造方法
Patent right, 特許出願2002-259396, Date applied: 04 Sep. 2002, 特許公開2003-174197, Date announced: 20 Jun. 2003 - SiOx粒子、その製造方法及び用途
Patent right, 特許出願2003-132866, Date applied: 12 May 2003, 特許公開2004-331480 - 半導体装置の製造方法
Patent right, 特許出願2001-191783, Date applied: 25 Jun. 2001, 特許公開2003-007696, Date announced: 10 Jan. 2003 - 発光素子
Patent right, 特願2001-024946, Date applied: 31 Jan. 2001, 特許公開2002-232005, Date announced: 16 Aug. 2002 - 発光素子
Patent right, 特許出願2003-080935, Date applied: 24 Mar. 2002 - 低比誘電率SiOx膜、製造方法、それを用いた半導体装置
Patent right, 国際出願番号PCT/JP01/03822, Date applied: 07 May 2001 - 窒化物半導体製造方法
Patent right, 特許出願平11-79548, Date applied: 24 Mar. 1999, 特許公開2000-277436, Date announced: 06 Oct. 2000 - シリコン基板上における高抵抗ガリウム砒素の製造法
Patent right, 特願平1-165134, Date applied: 27 Jun. 1989
