Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electronic devices and equipment

Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering

2003 - 2012
Yokohama National University

Reduced activation temperature of B impurities in Si(001) epitaxial layers grown by sputter epitaxy using B-doped Si(001) target compared with Si(111) target
Yoshiyuki Suda; Nobumitsu Hirose; Takahiro Tsukamoto; Akifumi Kasamatsu; Toshiaki Matsui
Journal of Crystal Growth, Elsevier BV, 654, 128092-128092, Mar. 2025, Peer-reviwed
Scientific journal

Hole-tunneling Si0.82Ge0.18/Si triple-barrier resonant tunneling diodes with high peak current of 297 kA/cm2 fabricated by sputter epitaxy
Yoshiyuki Suda; Nobumitsu Hirose; Takahiro Tsukamoto; Minoru Wakiya; Ayaka Shinkawa; Akifumi Kasamatsu; Toshiaki Matsui
Applied Physics Letters, 124, 093502-1-093502-6, Feb. 2024, Peer-reviwed
Scientific journal, English

Sn distribution in Ge/GeSn heterostructures formed by sputter epitaxy method
Takahiro Tsukamoto; Kento Ikeno; Nobumitsu Hirose; Akifumi Kasamatsu; Toshiaki Matsui; Yoshiyuki Suda
Lead, Journal of Crystal Growth, 604, 127045/1-127045/5, 18 Dec. 2022, Peer-reviwed
Scientific journal, English

Increasing the critical thickness of SiGe layers on Si substrates using sputter epitaxy method
Takahiro Tsukamoto; Yosuke Aoyagi; Shouta Nozaki; Nobumitsu Hirose; Akifumi Kasamatsu; Toshiaki Matsui; Yoshiyuki Suda
Lead, Journal of Crystal Growth, 600, 126900/1-126900/4, 29 Sep. 2022, Peer-reviwed
Scientific journal, English

Direct Growth of Patterned Ge on Insulators Using Graphene
Takahiro Tsukamoto; Nobumitsu Hirose; Akifumi Kasamatsu; Toshiaki Matsui; Yoshiyuki Suda
Lead, J. Phys. Chem. C, 125, 14117-14121, 18 Jun. 2021, Peer-reviwed
Scientific journal, English

Evaluation of crystallinity of lattice-matched Ge/GeSiSn heterostructure by Raman spectroscopy
Takahiro Tsukamoto; Nobumitsu Hirose; Akifumi Kasamatsu; Toshiaki Matsui; Yoshiyuki Suda
Lead, Thin Solid Films, 31, 138646-138646, 31 May 2021, Peer-reviwed
Scientific journal, English

Simple annealing process for producing unique one-dimensional fullerene crystal named fullerene finned-micropillar
T. Onishi; T. Tsukamoto; T. Oya
Corresponding, Scientific Reports, 10, 19270, 06 Nov. 2020, Peer-reviwed
Scientific journal, English

Hole-tunneling Si0.82Ge0.18/Si asymmetric-double-quantum-well resonant tunneling diode with high resonance current and suppressed thermionic emission
Ayaka Shinkawa; Minoru Wakiya; Yuki Maeda; Takahiro Tsukamoto; Nobumitsu Hirose; Akifumi Kasamatsu; Toshiaki Matsui; Yoshiyuki Suda
Japanese Journal of Applied Physics, 59, 8, 080903, 27 Jul. 2020, Peer-reviwed
Scientific journal, English

Increase in Current Density at Metal/GeO2/n-Ge Structure by Using Laminated Electrode
Takahiro Tsukamoto; Shota Kurihara; Nobumitsu Hirose; Akifumi Kasamatsu; Toshiaki Matsui; Yoshiyuki Suda
Lead, Electronic Materials Letters, 16, 41-46, 19 Nov. 2019, Peer-reviwed
Scientific journal, English

Effects of Low-Temperature GeSn Buffer Layers on Sn Surface Segregation During GeSn Epitaxial Growth
Takahiro Tsukamoto; Nobumitsu Hirose; Akifumi Kasamatsu; Toshiaki Matsui; Yoshiyuki Suda
Lead, Electronic Materials Letters, 16, 9-13, 14 Nov. 2019, Peer-reviwed
Scientific journal, English

Crystallinity control of SiC grown on Si by sputtering method
Ryosuke Watanabe; Takahiro Tsukamoto; Koichi Kamisako; Yoshiyuki Suda
JOURNAL OF CRYSTAL GROWTH, 463, 67-71, Apr. 2017, Peer-reviwed
Scientific journal, English

p-Cu2O/SiOx/n-SiC/n-Si memory diode fabricated with room-temperature-sputtered n-SiC and SiOx
Atsushi Yamashita; Takahiro Tsukamoto; Yoshiyuki Suda
JAPANESE JOURNAL OF APPLIED PHYSICS, 55, 12, 124103-1-124103-5, Dec. 2016, Peer-reviwed
Scientific journal, English

Control of surface flatness of Ge layers directly grown on Si (001) substrates by DC sputter epitaxy method
Takahiro Tsukamoto; Nobumitsu Hirose; Akifumi Kasamatsu; Takashi Mimura; Toshiaki Matsui; Yoshiyuki Suda
THIN SOLID FILMS, 592, 34-38, Oct. 2015, Peer-reviwed
Scientific journal, English

Low-temperature fabrication technologies of Si solar cell by sputter epitaxy method
Sohei Fujimura; Takahiro Someya; Shuhei Yoshiba; Takahiro Tsukamoto; Koichi Kamisako; Yoshiyuki Suda
JAPANESE JOURNAL OF APPLIED PHYSICS, 54, 8, 08KD01-1-08KD01-5, Aug. 2015, Peer-reviwed
Scientific journal, English

Formation of GeSn layers on Si (001) substrates at high growth temperature and high deposition rate by sputter epitaxy method
Takahiro Tsukamoto; Nobumitsu Hirose; Akifumi Kasamatsu; Takashi Mimura; Toshiaki Matsui; Yoshiyuki Suda
JOURNAL OF MATERIALS SCIENCE, 50, 12, 4366-4370, Jun. 2015, Peer-reviwed
Scientific journal, English

Investigation of Sn surface segregation during GeSn epitaxial growth by Auger electron spectroscopy and energy dispersive x-ray spectroscopy
Takahiro Tsukamoto; Nobumitsu Hirose; Akifumi Kasamatsu; Takashi Mimura; Toshiaki Matsui; Yoshiyuki Suda
APPLIED PHYSICS LETTERS, 106, 5, 052103-1-052103-4, Feb. 2015, Peer-reviwed
Scientific journal, English

p-Cu2O/SiCxOy/n-SiC/n-Si memory diode having resistive nonvolatile memory and rectifying behaviors
Atsushi Yamashita; Yoshihiko Sato; Takahiro Tsukamoto; Yoshiyuki Suda
APPLIED PHYSICS EXPRESS, 7, 7, 074203-1-074203-4, Jul. 2014, Peer-reviwed
Scientific journal, English

Planar electron-tunneling Si/Si0.7Ge0.3 triple-barrier resonant tunneling diode formed on undoped strain-relaxed buffer with flat surface
Takafumi Okubo; Takahiro Tsukamoto; Yoshiyuki Suda
APPLIED PHYSICS EXPRESS, 7, 3, 034001-1-034001-4, Mar. 2014, Peer-reviwed
Scientific journal, English

Effects of DC Sputtering Conditions on Formation of Ge Layers on Si Substrates by Sputter Epitaxy method
Takahiro Tsukamoto; Nobumitsu Hirose; Akifumi Kasamatsu; Takashi Mimura; Toshiaki Matsui; Yoshiyuki Suda
2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM), 97-98, 2014, Peer-reviwed
International conference proceedings, English

Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method
Takahiro Tsukamoto; Nobumitsu Hirose; Akifumi Kasamatsu; Takashi Mimura; Toshiaki Matsui; Yoshiyuki Suda
Applied Physics Letters, 103, 17, 172103-1-172103-4, 21 Oct. 2013, Peer-reviwed
Scientific journal, English

PN-Diode P-Oxide-Semiconductor/N-SiC/N-Si Resistive Nonvolatile Memory for Cross-Point Memory Array
Yoshihiko Sato; Atsushi Yamashita; Takahiro Tsukamoto; Yoshiyuki Suda
NONVOLATILE MEMORIES 2, 58, 5, 53-57, 2013, Peer-reviwed
International conference proceedings, English

Layered Structures of Interfacial Water and Their Effects on Raman Spectra in Graphene-on-Sapphire Systems
Hiroki Komurasaki; Takahiro Tsukamoto; Kenji Yamazaki; Toshio Ogino
JOURNAL OF PHYSICAL CHEMISTRY C, 116, 18, 10084-10089, May 2012, Peer-reviwed
Scientific journal, English

Evolution of step morphology on vicinal sapphire (1-102) surfaces accompanied with self-assembly of comb-shaped chemical domains
Hiroki Komurasaki; Toshinari Isono; Takahiro Tsukamoto; Toshio Ogino
APPLIED SURFACE SCIENCE, 258, 15, 5666-5671, May 2012, Peer-reviwed
Scientific journal, English

Effects of Surface Chemistry of Substrates on Raman Spectra in Graphene
Takahiro Tsukamoto; Kenji Yamazaki; Hiroki Komurasaki; Toshio Ogino
JOURNAL OF PHYSICAL CHEMISTRY C, 116, 7, 4732-4737, Feb. 2012, Peer-reviwed
Scientific journal, English

Graphene etching controlled by atomic structures on the substrate surface
Takahiro Tsukamoto; Toshio Ogino
CARBON, 50, 2, 674-679, Feb. 2012, Peer-reviwed
Scientific journal, English

Fabrication of Three-Dimensional Porous Alumina Microstructures Using Imprinting Method
Takahiro Tsukamoto; Toshio Ogino
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 159, 4, C155-C159, 2012, Peer-reviwed
Scientific journal, English

Control of Graphene Etching by Atomic Structures of the Supporting Substrate Surfaces
Takahiro Tsukamoto; Toshio Ogino
JOURNAL OF PHYSICAL CHEMISTRY C, 115, 17, 8580-8585, May 2011, Peer-reviwed
Scientific journal, English

'Graphene-on-insulator' fabricated on atomically controlled solid surfaces
T. Tsukamoto; T. Ogino
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 43, 37, 374014-1-374014-6, Sep. 2010, Peer-reviwed
Scientific journal, English

Control of the spatial distribution of porous alumina micro-domes formed during anodic oxidation
Takahiro Tsukamoto; Toshio Ogino
ELECTROCHIMICA ACTA, 54, 20, 4712-4717, Aug. 2009, Peer-reviwed
Scientific journal, English

Morphology of Graphene on Step-Controlled Sapphire Surfaces
Takahiro Tsukamoto; Toshio Ogino
APPLIED PHYSICS EXPRESS, 2, 7, 075502-1-075502-3, Jul. 2009, Peer-reviwed
Scientific journal, English

Observation of Three Dimensional Micro-Scaled Structures Buries in Porous Alumia Layers Fabricated by Anodic Oxidation
Takahiro Tsukamoto; Takahide Oya; Toshio Ogino
e-J. Surf. Sci. Nanotech, 6, 147-151, 2008, Peer-reviwed
Scientific journal, English