Master of Engineering, Tohoku University

Doctor of Engineering, Tohoku University

無線電力伝送

次世代無線通信

Microwave devices

Compound semiconductor devices

マイクロ波デバイス

化合物半導体デバイス

Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Communication and network engineering

Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electronic devices and equipment

01 Apr. 2021
電気通信大学大学院情報理工学研究科, 情報・ネットワーク工学専攻, 教授

01 Apr. 2016 - 31 Mar. 2021
電気通信大学大学院情報理工学研究科, 情報・ネットワーク工学専攻, 准教授

01 Jul. 2014 - 31 Mar. 2016
電気通信大学大学院情報理工学研究科, 情報・通信工学専攻, 准教授

01 Apr. 2007 - 30 Jun. 2014
The University of Electro-Communications, Assistant Professor

01 Oct. 2003 - 31 Mar. 2007
The University of Electro-Communications, Research Associate

01 Apr. 2001 - 30 Sep. 2003
The Research Institute of Electrical Communication, Tohoku University, Research Associate

Mar. 2001
Tohoku University, Graduate School, Division of Engineering, Electronic Engineering

Mar. 1998
Tohoku University, Graduate School, Division of Engineering, Electronic Engineering

Mar. 1996
Tohoku University, Faculty of Engineering, Electronic Engineering

Mar. 1994
Ichinoseki National College of Technology, 電気工学科, Japan

Apr. 2023 - Present
委員, 電子情報通信学会エレクトロニクスソサイエティAPMC国内委員会, Society

May 2019 - Present
専門委員, 電子情報通信学会集積回路研究専門委員会, Society

May 2022 - May 2024
幹事, 電子情報通信学会マイクロ波研究専門委員会, Society

Jun. 2018 - Jun. 2020
財務幹事, 電子情報通信学会エレクトロニクス企画会議, Society

May 2014 - May 2016
幹事補佐, 電子情報通信学会マイクロ波研究専門委員会, Society

May 2011 - May 2014
専門委員, 電子情報通信学会マイクロ波研究専門委員会, Society

Mar. 2021
電子情報通信学会エレクトロニクスソサイエティ活動功労表彰
Japan society

Dec. 2019
Singapore
APMC 2019 Prize In "Active Circuits", Takuya Seshimo;Yoichiro Takayama;Ryo Ishikawa;Kazuhiko Honjo
International society, Singapore

Mar. 2017
電子情報通信学会エレクトロニクスソサイエティ活動功労表彰
Japan society

Sep. 2016
電子情通信学会エレクトロニクスソサイエティ
マイクロ波電力増幅器の統一的設計理論とその応用
電子情通信学会エレクトロニクスソサイエティ平成28年度招待論文賞, 本城和彦;高山洋一郎;石川亮
Official journal

Sep. 2016
電子情通信学会エレクトロニクスソサイエティ
マイクロ波電力増幅器の統一的設計理論とその応用
電子情通信学会エレクトロニクスソサイエティ招待論文賞, 本城和彦;高山洋一郎;石川亮
Official journal

Jun. 2002
応用物理学会 日本光学会 近接場光学研究グループ 近接場光学賞

Dec. 1999
応用物理学会東北支部講演奨励賞

A 4.7-GHz-Band GaN HEMT Doherty-Outphasing Power Amplifier with a Miniature Combiner
Yudai Shiraishi; Kazuhiko Honjo; Ryo Ishikawa
Last, Proc. 2024 Asia-Pacific Microwave Conference, 19 Nov. 2024, Peer-reviwed
International conference proceedings, English

3入力電力レベル負荷最適化によるドハティ増幅器設計
石川 亮; 山本 薫臣; 高山 洋一郎; 本城 和彦
Lead, 電子情報通信学会論文誌 C, J107-C, 11, Nov. 2024, Peer-reviwed, Invited
Scientific journal, Japanese

Analysis of beamforming for OAM communication using loop antenna arrays and paraboloids
Akira Saitou; Kaito Uchida; Kanki Kitayama; Ryo Ishikawa; Kazuhiko Honjo
IEICE Transactions on Communications, Institute of Electrical and Electronics Engineers (IEEE), E107-B, 11, 1-10, Nov. 2024, Peer-reviwed
Scientific journal, English

28-GHz GaN/SiC Series Gain Switch MMICs and Analysis of Their Power Handling Capabilities
Hiroshi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
Proc. 54th European Microwave Conference, 24 Sep. 2024, Peer-reviwed
International conference proceedings, English

Wireless Power Transmission System from Lunar Orbit
Koji Tanaka; Tomohiko Mitani; Yoshiyuki Fujino; Ryo Ishikawa; Kazuhiko Honjo; Koichi Ijichi; Hiroki Yanakagawa; Uchuida
34th International Symposium on Space Technology and Science, Jun. 2024, Peer-reviwed
International conference proceedings, English

A 2‐GHz GaN HEMT Power Amplifier Harmonically Tuned Using a Compact One‐Port CRLH Transmission Line
Shinichi Tanaka; Ryota Mogami; Naoki Iisaka; Kazuhiko Honjo; Ryo Ishikawa
IET Circuits, Devices & Systems, Institution of Engineering and Technology (IET), 2024, 1, Jan. 2024, A compact harmonic tuning network (HTN) using a composite right‐/left‐handed (CRLH) transmission line (TL) is introduced. The CRLH TL offers purely imaginary harmonic load impedances, as it essentially functions as a one‐port circuit at the harmonic frequencies, owing to a harmonics trap filter. In comparison to conventional HTNs based on microstrip line (MSL) or hybrid MSL and CRLH TL technologies, the proposed HTN features remarkable compactness while accommodating various operating classes of amplifiers. As a proof of concept, a 2‐GHz 10‐W gallium nitride (GaN) high electron mobility transistor (HEMT) power amplifier (PA) was fabricated, demonstrating drain efficiency of 84.6% and power added efficiency (PAE) of 78.4%. The novel HTN is expected to find applications in PAs for transmitter systems, where high efficiency and a minimal circuit footprint are of paramount importance.
Scientific journal

Extension of Transmission Distance via Dielectric-Lens Repeater for OAM Multiplexing Communications
Kaito Uchida; Akira Saitou; Kazuhiko Honjo; Ryo Ishikawa
Last, Proc. 2023 Asia-Pacific Microwave Conference, 730-732, 08 Dec. 2023, Peer-reviwed
International conference proceedings, English

Multi-point OAM communication by beamsteering using loop antenna array displaced from focus of paraboloid
Kanki Kitayama; Akira Saitou; Kazuhiko Honjo; Ryo Ishikawa
Last, Proc. 2023 Asia-Pacific Microwave Conference, 608-610, 08 Dec. 2023, Peer-reviwed
International conference proceedings, English

Wide-Dynamic-Range High-Efficiency GaN HEMT Rectifier with Adaptive Gate Bias Controlling Rectifier
Taki Nagata; Jun Yamazaki; Kazuhiko Honjo; Ryo Ishikawa
Last, Proc. of 2023 Asia-Pacific Microwave Conference, 509-511, 07 Dec. 2023, Peer-reviwed
International conference proceedings, English

Fully Integrated 28-GHz-Band GaN HEMT Outphasing Amplifier Designed by Considering Insertion Loss at Dual-Power-Level Optimization
Taiki Kobayashi; Kazuhiko Honjo; Ryo Ishikawa
Last, Proc. of 2023 Asia-Pacific Microwave Conference, 518-520, 07 Dec. 2023, Peer-reviwed
International conference proceedings, English

28-GHz-band Loop Antenna Arrays Loaded with Varactor Diodes for OAM Beamsteering
Tsuyoshi Yoshida; Akira Saito; Kazuhiko Honjo; Ryo Ishikawa
Last, Proc. of Asia-Pacific Microwave Conference, 748-750, 06 Dec. 2023, Peer-reviwed
International conference proceedings, English

DC-Feedback-Mode Transistor Rectifier/Voltage-Doubler Diode Rectifier for Negative Gate Biasing to Microwave Power Amplifiers
Taki Nagata; Kazuhiko Honjo; Ryo Ishikawa
Proc. of 2022 Asia Pacific Microwave Conference, IEICE, 122, 250(MW2022 109-130), 446-448, 02 Dec. 2022, Peer-reviwed
International conference proceedings, English

DC Voltage Synthesis of 2.45-GHz-Band Sub-mW High-Efficiency Rectifier Using Zero-Threshold GaAs HEMTs
Tsuyoshi Yoshida; Kazuhiko Honjo; Ryo Ishikawa
Last, Proc. of 2022 Asia Pacific Microwave Conference, IEICE, 572-574, 02 Dec. 2022, Peer-reviwed
International conference proceedings, English

Optimizations of Curvature of Concave Reflectors and Feed-Point Azimuths of Loop Antennas for Long-Range OAM Communication
Katsuya Ishihara; Akira Saitou; Kazuhiko Honjo; Ryo Ishikawa
Proc. of 2022 Asia Pacific Microwave Conference, IEICE, 393-395, 01 Dec. 2022, Peer-reviwed
International conference proceedings, English

Back-Off Expansion by Outphasing Combination with Simple Power Amplifiers for Quasi-Millimeter Wave Operation
Nao Ashizawa; Kazuhiko Honjo; Ryo Ishikawa
Proc. of 2022 Asia Pacific Microwave Conference, IEICE, 91-93, 29 Nov. 2022, Peer-reviwed
International conference proceedings, English

Pattern synthesis of spatial eigenmodes exploiting spherical conformal array
Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
IEICE Transactions on Communications, IEICE, E105-B, 10, 1231-1239, 01 Oct. 2022, Peer-reviwed
Scientific journal, English

The Outline and the Current Status of the Power Transmission System Development Project for the Realization of the SSPS
Kenji Sasaki; Hirotaka Machida; Koichi Ijichi; Osamu Kashimura; Kosei Ishimura; Ryo Ishikawa; Kazuhiko Honjo; Yuichiro Ozawa; Koji Tanak
Proc. 73rd International Astronautical Congress, IAC 2022 - Paris, France, 124, 18 Sep. 2022, Peer-reviwed
International conference proceedings, English

Mode Purity Evaluation for OAM Communication using Integrated Loop Antenna Array
Haruki Kikuchi; Akira Saitou; Wataru Wada; Hiroshi Suzuki; Kazuhiko Honjo; Ryo Ishikawa
Proc. 51st European Microwave Conference, EuMA, 643-646, 06 Apr. 2022, Peer-reviwed
International conference proceedings, English

A Novel GaN/SiC MMIC Gain Switch Using a Resonant Bidirectional FET Amplifier
Hiroshi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
Proc. of 51th European Microwave Conference, EuMA, 285-288, 05 Apr. 2022, Peer-reviwed, This paper presents a novel gain switch circuit using a resonant bidirectional field-effect transistor (FET) amplifier. The proposed switch circuit can provide insertion gain even at the millimeter-wave frequencies by using a resonant bidirectional FET amplifier. The fundamental operation of a single pole single throw (SPST) FET gain switch is successfully demonstrated as a GaN/SiC microwave monolithic integrated circuit (MMIC), which is a quite essential material to ensure the watt-class RF power handling capability for the transmission signal even at the millimeter-wave frequencies. It shows the insertion gain and isolation of 0.98 dB and 11.2 dB, respectively, at 25 GHz. Input power for 1-dB gain compression, P1dB, is around 6 dBm at 25 GHz. For further improvement of insertion gain and isolation, maximizing transconductance of FET and minimizing feedback capacitance by bias optimization and/or increasing stage number of a bidirectional amplifier are found to be efficient from principle analysis of the presented switch circuit. Furthermore, optimization of gate width and bias voltage improves power handling capability.
International conference proceedings, English

A 28-GHz-Band GaN HEMT MMIC Doherty Power Amplifier Designed by Load Resistance Division Adjustment
Ryo Ishikawa; Takuya Seshimo; Yoichiro Takayama; Kazuhiko Honjo
Proc. of 16th European Microwave Integrated Circuits Conference, EuMA, 241-244, 04 Apr. 2022, Peer-reviwed
International conference proceedings, English

零しきい値Si MOS FETを用いた10 MHz帯双方向無線給電システム
久米鳳春; 本城和彦; 石川亮
電子情報通信学会和文論文誌C, 電子情報通信学会, J105-C, 1, 28-36, 01 Jan. 2022, Peer-reviwed
Scientific journal, Japanese

A 4.5-GHz-Band Miniature Outphasing GaN HEMT MMIC Power Amplifier
Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
Proc. of 2021 Asia Pacific Microwave Conference, IEEE MTT-S, 106-108, 28 Nov. 2021, Peer-reviwed
International conference proceedings, English

The Outline of the Development of the Power Transmission System for the Prospective Space Experiment and Operation
Koichi Ijichi; Kenji Sasaki; Hirotaka Machida; Osamu Kashimura; Koji Tanaka; Kosei Ishimura; Ryo Ishikawa; Kazuhiko Honjo
Proc. 72nd International Astronautical Congress 2021, 26 Oct. 2021, Peer-reviwed
International conference proceedings, English

Doherty Amplifier Design Based on Asymmetric Configuration Scheme
Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
IEICE Transactions on Electronics, IEICE, E104-C, 10, 496-505, 01 Oct. 2021, Peer-reviwed, Invited
Scientific journal, English

Input-Power-Synchronous Adaptively Biased Wide-Dynamic-Range High-Efficiency Rectifier with Zero-Threshold GaAs HEMTs
Jun Yamazaki; Ryo Ishikawa; Kazuhiko Honjo
Proc. of 50th European Microwave Conference, EuMA, EuMC22-1, 436-439, 13 Jan. 2021, Peer-reviwed
International conference proceedings, English

Loop Antenna Array System with Simultaneous Operation of OAM Multiplex Communication and Wireless Power Transfer
Wataru Wada; Ryo Ishikawa; Akira Saitou; Hisanosuke Miyake; Haruki Kikuchi; Hiroshi Suzuki; Kazuhiko Honjo
Proc. of 50th European Microwave Conference, EuMA, EuMC28-5, 530-533, 13 Jan. 2021, Peer-reviwed
International conference proceedings, English

Investigation of Integration for OAM Communication Using Loop Antenna Array and Analysis of Alignment Tolerance for Practical Use
Haruki Kikuchi; Akira Saitou; Hisanosuke Miyake; Wataru Wada; Hiroshi Suzuki; Ryo Ishikawa; Kazuhiko Honjo
Proc. of 50th European Microwave Conference, EuMA, EuMC35-3, 714-717, 13 Jan. 2021, Peer-reviwed
International conference proceedings, English

High-Efficiency Asymmetric Doherty Power Amplifier with Spurious Suppression Circuit
Yuki Takagi; Naoki Hasegawa; Yoshichika Ohta; Ryo Ishikawa; Kazuhiko Honjo
Proc. of 50th European Microwave Conference, EuMA, EuMC15-4, 308-311, 12 Jan. 2021, Peer-reviwed
International conference proceedings, English

F級電力増幅器に向けた高調波インピーダンス変換器の小型化
齋木研人; 田中愼一; 石川亮; 本城和彦
電子情報通信学会和文論文誌C, 電子情報通信学会, J104-C, 1, 18-24, 01 Jan. 2021, Peer-reviwed
Japanese

Improved Performance for 8-Channel Multiplexing OAM Communication by Suppressing Interference
Hisanosuke Miyake; Akira Saitou; Hiroshi Suzuki; Ryo Ishikawa; Kazuhiko Honjo
Proc. of 2020 Asia Pacific Microwave Conference, 161-163, 09 Dec. 2020, Peer-reviwed
International conference proceedings, English

High-Efficiency DC-RF/RF-DC Conversion Based on High-Efficiency Power Amplifier Design Technique (Invited)
Ryo Ishikawa; Kazuhiko Honjo
Proc. of 2020 IEEE International Symposium on Radio-Frequency Integration Technology, 181-183, 04 Sep. 2020, Peer-reviwed
International conference proceedings, English

A 3.9-GHz-Band Outphasing Power Amplifier with Compact Combiner Based on Dual-Power-Level Design for Wide-Dynamic-Range Operation
Ryoichi Ogasawara; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
Proc. of 2020 International Microwave Symposium, IEEE MTT-S, Tu2F-2, 111-114, 21 Jun. 2020, Peer-reviwed
English

Small-signal design consideration for two-dimensional change-over switch GaN MMICs
Hiroshi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
Japanese Journal of Applied Physics, 応用物理学会, 59, SG, SGGL07-1-SGGL07-9, 01 Apr. 2020, Peer-reviwed, This paper presents small-signal design consideration for two-dimensional change-over switch GaN monolithic microwave integrated circuits (MMICs). For the design of two-dimensional change-over single pole single throw (SPST) switch circuit which electrically changes between low pass filter and high pass filter, the demands for design conditions are as follows: 1. two-dimensional switch with time/frequency domain, 2. The sufficient isolation in off-state at the signal frequencies for both low band and high band. Two-dimensional change-over single pole double throw (SPDT) switch provides a duplexer for frequency division duplex operation and an SPDT switch for time division duplex operation for low-cost the fifth generation (5G) front-ends (FEs), GaN two-dimensional change-over SPST and SPDT MIMIC switches are successfully demonstrated by using 0.25 mu m GaN foundry process for high power handling capability in 5G FEs. The demonstrated GaN MMIC switches shows almost the same two-dimensional switching characteristics as the designed ones. (C) 2020 The Japan Society of Applied Physics
Scientific journal, English

Harmonic-Tuned High-Efficiency GaN HEMT Doherty Power Amplifier Based on Two-Power-Level Impedance Optimization
Takuya Seshimo; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
Proc. of 2019 Asia Pacific Microwave Conference, 119, 292(MW2019 100-117), 375-377, 11 Dec. 2019, Peer-reviwed
English

A Novel Sub-6-GHz and 28-GHz GaN Switchable Diplexer MMIC for Carrier Aggregation with Massive MIMO Full Duplex Link
Hiroshi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
Proc. of 2019 Asia Pacific Microwave Conference, IEEE, 1651-1653, 11 Dec. 2019, Peer-reviwed, This paper presents a novel sub-6-GHz and 28-GHz GaN switchable diplexer microwave monolithic integrated circuit (MMIC) for carrier aggregation (CA) with massive multiple-input multiple-output (MIMO) full-duplex (FD) link, which can mitigate self-interference (SI) in CA operation and can select antenna. The switchable diplexer MMIC is successfully demonstrated by 0.25-mu m GaN foundry process to ensure the high power handling capability in front-ends (FEs). The developed GaN switchable diplexer MMIC indicates the insertion losses of less than 2.0 dB and 2.5 dB at 3.7 Gib, and 4.5 GHz, respectively, with the isolation of more than 21.3 dB at 28.5 GHz. For another bias state, the isolations of more than 31.9 dB and 28.3 dB at 3.7 GHz and 4.5 GHz, respectively, with the insertion loss of 3.0 dB at 28.5 GHz are obtained. A developed GaN sub-6-GHz and 28-GHz switchable diplexer MMIC contributes to highspeed techniques such as CA with massive MIMO FD link for 5G and beyond 5G applications.
International conference proceedings, English

High Performance OAM Communication Exploiting Port-Azimuth Effect of Loop Antennas
Hiroto Otsuka; Ryohei Yamagishi; Akira Saitou; Hiroshi Suzuki; Ryo Ishikawa; Kazuhiko Honjo
IEICE Transactions on Communications, IEICE, E102-B, 12, 2267-2275, 01 Dec. 2019, Peer-reviwed
Scientific journal, English

A 2.4 GHz-Band Enhancement-Mode GaAs HEMT Rectifier with 19% RF-to-DC Efficiency for 1 uW Input Power
Ryo Ishikawa; Tsuyoshi Yoshida; Kazuhiko Honjo
Proc. of 49th European Microwave Conference, EuMA, EUMC29-4, 591-594, 02 Oct. 2019, Peer-reviwed
International conference proceedings, English

Class-F GaN HEMT amplifiers using compact CRLH harmonic tuning stubs designed based on negative order resonance modes
Shinichi Tanaka; Sota Koizumi; Ryo Ishikawa; Kazuhiko Honjo
IEICE Transactions on Electronics, IEICE, E102-C, 10, 691-698, 01 Oct. 2019, Peer-reviwed, Copyright © 2019 The Institute of Electronics, Extremely compact harmonic tuning circuits for class-F amplifiers are realized using composite right-/left-handed (CRLH) transmission line stubs. The proposed circuits take up only a small fraction of the amplifier circuit area and yet are capable of treating four harmonics up to the 5th with a single stub or double stub configuration. This has become possible by using the negative order resonance modes of the CRLH TL, allowing for flexible and simultaneous control of many harmonics by engineering the dispersion relation of the stub line. The CRLH harmonic tuning stubs for 2-GHz amplifiers were realized using surface mounting chip capacitors, whereas the stub for 4-GHz amplifiers was fabricated based fully on microstrip-line technology. The fabricated 2-GHz and 4-GHz GaN HEMT class-F amplifiers exhibited peak drain efficiency and peak PAE of more than 83% and 74%, respectively.
Scientific journal, English

Proposal of a Novel SPDT Switch and Duplexer Dual-Function Circuit
Hiroshi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
Proc. of 2019 International Conference on Solid State Devices and Materials, M-5-04, 539-540, 05 Sep. 2019, Peer-reviwed
International conference proceedings, English

A High-Efficiency DC-to-RF/RF-to-DC Conversion Module with Zero-Threshold FET for Bidirectional Wireless Power Transfer
Takaharu Kume; Ryo Ishikawa; Kazuhiko Honjo
Proc. PhotonIcs & Electromagnetics Research Symposium (PIERS), The Electromagnetics Academy, 4P3b-4, 20 Jun. 2019, Peer-reviwed
International conference proceedings, English

Anti-Interference Circuit Configuration for Concurrent Dual-Band Operation in High-Efficiency GaN HEMT Power Amplifier
H. Nishizawa; Y. Takayama; R. Ishikawa; K. Honjo
Progress In Electromagnetics Research C, 93, 199-209, Jun. 2019, Peer-reviwed
Scientific journal, English

18GHz-/28GHz-Band Gain-Boosted Feedback Power Amplifiers Using Affordable GaN HEMT MMIC Process
Tsukasa Yasui; Ryo Ishikawa; Kazuhiko Honjo
Proc. of 2018 Asia Pacific Microwave Conference, FR2-K-03, 1214-1216, 09 Nov. 2018, Peer-reviwed
International conference proceedings, English

Advanced Mode Unity Using Loop Antennas Proximate to Reflector for Orbital Angular Momentum Communication
Ryohei Yamagishi; Hiroto Otsuka; Ryo Ishikaw; Akira Saitou; Hiroshi Suzuki; Kazuhiko Honjo
Proc. of 2018 Asia Pacific Microwave Conference, IEICE, TH2-B1-01, 491-493, 08 Nov. 2018, Peer-reviwed
International conference proceedings, English

Double Multiplicity Exploiting Orthogonal Polarizations of OAM-Wave for OAM Communication with Loop Arrays
Akira Saitou; Hiroto Otsuka; Ryohei Yamagishi; Ryo Ishikaw; Hiroshi Suzuki; Kazuhiko Honjo
Proc. of 2018 Asia Pacific Microwave Conference, IEICE, TH2-B1-02, 494-496, 08 Nov. 2018, Peer-reviwed
International conference proceedings, English

High-Performance Long-Range OAM Communication Using Loop Antenna Arrays in 12-GHz Band
Hiroto Otsuka; Ryohei Yamagishi; Ryo Ishikaw; Akira Saitou; Hiroshi Suzuki; Kazuhiko Honjo
Proc. of 2018 Asia Pacific Microwave Conference, IEICE, TH3-IF-30, 1022-1024, 08 Nov. 2018, Peer-reviwed
International conference proceedings, English

GaN HEMT Darlington Power Amplifier with Independent Biasing for High-Efficiency Low-Distortion Wide-Dynamic-Range Adjustment
Atsushi Kitamura; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
Proc. of 2018 Asia Pacific Microwave Conference, TH1-D-03, 458-460, 08 Nov. 2018, Peer-reviwed
International conference proceedings, English

A Novel Reconfigurable GaN Filter MMIC with Active Reflector
Hitoshi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
Proc. of 2018 Asia Pacific Microwave Conference, TH4-B2-4, 717-719, 08 Nov. 2018, Peer-reviwed
International conference proceedings, English

High-Performance Long-Range OAM Communication
Hiroto Otsuka; Ryohei Yamagishi; Ryo Ishikawa; Akira Saitou; Hiroshi Suzuki; Kazuhiko Honjo
Proceedings of the 2018 Asia Pacific Microwace Conference, Nov. 2018, Peer-reviwed
International conference proceedings, English

4.5-/4.9-GHz-Band Selective High-Efficiency GaN HEMT Power Amplifier by Characteristic Impedance Switching
Kazuki Mashimo; Ryo Ishikawa; Kazuhiko Honjo
IEICE Transactions on Electronics, IEICE, E101-C, 10, 751-758, 01 Oct. 2018, Peer-reviwed
Scientific journal, English

Fully Integrated Asymmetric Doherty Amplifier Based on Two-Power-Level Impedance Optimization
Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
Proc. of 48th European Microwave Conference, EuMA, EuMC/EuMIC02-1, 253-256, 23 Sep. 2018, Peer-reviwed
International conference proceedings, English

83nJ/bit Transmitter Using Code-Modulated Synchronized-OOK on 65nm SOTB for Normally-Off Wireless Sensor Networks
Van-Trung Nguyen; Ryo Ishikawa; Koichiro Ishibashi
IEICE Transactions on Electronics, 電子情報通信学会, E101-C, 7, 472-479, 01 Jul. 2018, Peer-reviwed
Scientific journal, English

GHz-Band High-Efficiency Rectifier Design Based on MHz-Band Multi-Harmonic Active Source-Pull Technique
Minato Machida; Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
Proc. of 2018 International Microwave Symposium, IEEE MTT-S, Th1B-4, 1134-1137, 14 Jun. 2018, Peer-reviwed
International conference proceedings, English

Second Harmonic Treatment Technique for Bandwidth Enhancement of GaN HEMT Amplifier With Harmonic Reactive Terminations
Jun Enomoto; Ryo Ishikawa; Kazuhiko Honjo
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 65, 12, 4947-4952, Dec. 2017, Peer-reviwed, Source and load impedance conditions for the second harmonics have a great influence on the efficiency of amplifiers. The bandwidth of high-efficiency operation is limited, since efficiency is drastically degraded due to a slight change in source-side second harmonic impedance from the optimum point. For this reason, to avoid steep efficiency degradation, a source-side second harmonic impedance control is introduced. In addition, a harmonic treatment network, which reduces the influence on matching-network design, is also described here. A fabricated GaN HEMT amplifier has achieved a maximum power-added efficiency (PAE) of 79% with a saturated output power of 48.0 dBm at 2.02 GHz. The amplifier has also achieved a high-efficiency characteristic of more than 70% PAE in the frequency range from 1.68 to 2.12 GHz.
Scientific journal, English

Analysis on Doubling Multiplicity for OAM Communication Using Loop Antenna Arrays
Akira Saitou; Hiroto Otsuka; Ryohei Yamagishi; Ryo Ishikawa; Kazuhiko Honjo
Proc. of 2017 Asia Pacific Microwave Conference, TH2-B-03, 1091-1094, 16 Nov. 2017, Peer-reviwed
International conference proceedings, English

High Performance OAM Communication Using Loop Antennas Optimized for Port Azimuths
Hiroto Otsuka; Ryohei Yamagishi; Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
Proc. of 2017 Asia Pacific Microwave Conference, TH2-B-02, 1087-1090, 16 Nov. 2017, Peer-reviwed
International conference proceedings, English

Improvement of Mode Uniqueness for OAM Communication Using Loop Array with Reflector Plane
Ryohei Yamagishi; Hiroto Otsuka; Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
Proc. of 2017 Asia Pacific Microwave Conference, TH2-B-04, 1095-1098, 16 Nov. 2017, Peer-reviwed
International conference proceedings, English

Linearity Improvement for Single-GaN HEMT Dual-Band Power Amplifier in Concurrent Operation Mode
Alice Maruyama; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
Proc. of 2017 Asia Pacific Microwave Conference, THP1-P.12, 995-998, 16 Nov. 2017, Peer-reviwed
International conference proceedings, English

Electrothermal Transient Analysis of GaN Power Amplifier With Dynamic Drain Voltage Biasing
Shigeru Hiura; Ryo Ishikawa
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 27, 11, 1019-1021, Nov. 2017, Peer-reviwed, AM-AM distortion due to dynamic drain voltage biasing for a power amplifier (PA) has been precisely emulated by an electrothermal transient analysis. A transistor model of a 20-W gallium nitride field-effect transistor (FET) in the PA for the electrothermal simulation is composed of thermal equivalent circuits and the Angelov FET model. Radio frequency performances of the PA were simulated by the transient analysis of amplitude modulation input signals with modulation frequencies from 2.5 to 10 MHz. The simulation results showed that a temperature variation in the PA caused AM-AM hysteresis on the order of MHz, which was consistent with the results obtained from a theoretical analysis of the transient temperature.
Scientific journal, English

A Novel Two-Dimensional Changeover GaN MMIC Switch for Electrically Selectable SPDT Multifunctional Device
Hiroshi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
Proc. of 39th IEEE Compound Semiconductor IC (CSIC) Symposium, IEEE EDS, MTT-S, and SSCS, L.4, ---, 25 Oct. 2017, Peer-reviwed
International conference proceedings, English

Wide-Band High-Efficiency GaN HEMT Amplifier Based on Dual-Band Multi-Harmonic Treatments
Yuki Takagi; Ryo Ishikawa; Kazuhiko Honjo
Proc. of 47th European Microwave Conference, EuMC22-04, 468-471, 11 Oct. 2017, Peer-reviwed
International conference proceedings, English

4.5-/4.9 GHz-Band Tunable High-EfficiencyGaN HEMT Power Amplifier
Kazuki Mashimo; Ryo Ishikawa; Kazuhiko Honjo
Proc. of 47th European Microwave Conference, EuMC22-02, 366(MW2017 142-161), 460-463, 11 Oct. 2017, Peer-reviwed
English

Analytical and Measured Estimation for4-Value Multiplexing OAM Communication Using Loop Array Antennas
Hiroto Otsuka; Ryohei Yamagishi; Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
Proc. of 47th European Microwave Conference, EuMC03-05, 54-57, 10 Oct. 2017, Peer-reviwed
International conference proceedings, English

Concurrent dual-band access GaN HEMT MMIC amplifier suppressing inter-band interference
Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
IEEE MTT-S International Microwave Symposium Digest, Institute of Electrical and Electronics Engineers Inc., THIF2-14, 2045-2048, 04 Oct. 2017, Peer-reviwed, A concurrent dual-band GaN HEMT MMIC amplifier has been developed for next-generation wireless communication systems. To increase information quantity, a carrier-aggregation technique that uses two or more bands for one information block will be employed at super-high-frequency bands. Efficiency and linearity for general dual-band amplifiers are strongly degraded in concurrent operation due to cross- and inter-modulation distortion between each band. To suppress those, inter-band interference rejection circuits are embedded in the proposed amplifier circuit configuration. Suppression of cross- and inter-modulation distortion was confirmed for a fabricated 4-/8-GHz-band GaN HEMT MMIC amplifier during concurrent operation.
International conference proceedings, English

A Novel Two-Dimensional Changeover GaN MMIC Switch
Hiroshi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
2017 IEEE Compound Semiconductor Integrated Circuit Symposium, Oct. 2017, Peer-reviwed
International conference proceedings, English

GaN HEMT DC I-V Device Model for Accurate RF Rectifier Simulation
Tsukasa Yasui; Ryo Ishikawa; Kazuhiko Honjo
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 27, 10, 930-932, Oct. 2017, Peer-reviwed, Recently, various high-efficiency RF rectifiers have been proposed. In this letter, to improve the simulation accuracy of RF active rectifier circuits, a new device model for GaN HEMTs is proposed that improves the reproducibility of I-D-V-DS characteristics in the third-quadrant region (both drain voltage and drain current are negative). Based on measured characteristic data of an actual GaN HEMT, the device parameters for this model have been decided, and the advantage of the new device model has been confirmed.
Scientific journal, English

Concurrent Dual-Band Amplifier Design Technique for 5G Wireless Systems
Kazuhiko Honjo; Yoichiro Takayama; Ryo Ishikawa
Proc. of 12th Topical Workshop on Heterostructure Microelectronics, 10-1, 85-86, 31 Aug. 2017, Peer-reviwed, Invited
International conference proceedings, English

マイクロ波 GaN FET 高速スイッチング電源の熱・電気連成シミュレーション
日浦滋; 石川亮
エレクトロニクス実装学会誌, エレクトロニクス実装学会, 20, 4, 211-218, 01 Jul. 2017, Peer-reviwed, An electro-thermal simulation for a microwave gallium nitride (GaN) field-effect transistor (FET) high-speed-switching power-supply was carried out to precisely estimate the influence of the self-heating effect on high-power operation. In this simulation, significant differences in the output power, power efficiency, and operation temperature of the FET were confirmed in comparison with calculated results for a simplified ideal model, when the switching frequency was changed from 10 MHz to several GHz, especially at the higher frequency range. For pulse-width modulation switching, the maximum variation of the operation temperature according to the output voltage variation was obtained at a center frequency of 2.5 MHz, which was about 44% of the relative temperature variation relative to the average temperature increase.
Japanese

Microwave Characteristics of an Independently Biased 3-Stack InGaP/GaAs HBT Configuration
Manh Duy Luong; Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 64, 5, 1140-1151, May 2017, Peer-reviwed, This paper investigates various important microwave characteristics of an independently biased 3-stack InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) chip at both small-signal and large-signal operation. By taking the advantage of the independently biased functionality, bias condition for individual transistor can be adjusted flexibly, resulting in the ability of independent control for both small-signal and large-signal performances. It was found that at small-signal operation stability and isolation characteristics of the proposed configuration can be significantly improved by controlling bias condition of the second-stage and the third-stage transistors while at large-signal operation its linearity and power gain can be improved through controlling the bias condition of the first-stage and the third-stage transistors. To demonstrate the benefits of using such an independently biased configuration, a measured optimum large-signal performance at an operation frequency of 1.6 GHz under an optimum bias condition for the high gain, low distortion were obtained as: PAE = 23.5 %, P-out = 12 dBm; Gain = 32.6 dB at IMD3 = -35 dBc. Moreover, to demonstrate the superior advantage of the proposed configuration, its small-signal and large-signal performance were also compared to that of a single stage common-emitter, a conventional 2-stack, an independently biased 2-stack and a conventional 3-stack configuration. The compared results showed that the independently biased 3-stack is the best candidate among the configurations for various wireless communications applications.
Scientific journal, English

低周波アクティブロード・プル評価に基づくマイクロ波高効率増幅器設計法—トランジスタ内寄生容量の非線形性考慮による高精度化—
陶堯; 石川亮; 本城和彦
電子情報通信学会和文論文誌C, 電子情報通信学会, J99-C, 12, 651-658, 01 Dec. 2016, Peer-reviwed, Invited
Japanese

Miniature Design Technique of Stabilized C-Band p-HEMT MMIC Doherty Power Amplifier with Lumped Element Load Modulator
Tsuyoshi Yoshida; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
IEICE TRANSACTIONS ON ELECTRONICS, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E99C, 10, 1130-1139, Oct. 2016, Peer-reviwed, A broadband miniature GaAs p-HEMT MMIC Doherty power amplifier (DPA) with a series connected load operating at the C band has been developed. To minimize the circuit size, a lumped-element load modulation circuit without a quarter wavelength transmission line has been introduced to MMIC technology. For both an input and output power divider/combiner circuit, two baluns are used to reduce the length of the phase adjuster circuit without causing instability. An inherent DPA instability problem related with the degenerated sub-harmonic frequency has been analyzed with the S and T parameters of DPA circuit components, resulting in a novel stabilized circuit. The developed stabilized DPA delivered a maximum power added efficiency (PAE) of 49% and a maximum output power of 23.4 dBm. Greater than 40% PAE below a 10-dB input back-off from a saturated output power is obtained for a frequency range of 6.1 to 6.8 GHz.
Scientific journal, English

Experimental Design Method for High-Efficiency Microwave Power Amplifiers Based on a Low-Frequency Active Harmonic Load-Pull Technique
Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
IEICE TRANSACTIONS ON ELECTRONICS, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E99C, 10, 1147-1155, Oct. 2016, Peer-reviwed, A novel experimental design method based on a low-frequency active load-pull technique that includes harmonic tuning has been proposed for high-efficiency microwave power amplifiers. The intrinsic core component of a transistor with a maximum oscillation frequency of more than several tens of gigahertz can be approximately assumed as the nonlinear current source with no frequency dependence at an operation frequency of several gigahertz. In addition, the reactive parasitic elements in a transistor can be omitted at a frequency of much less than 1 GHz. Therefore, the optimum impedance condition including harmonics for obtaining high efficiency in a nonlinear current source can be directly investigated based on a low-frequency active harmonic load-pull technique in the low-frequency region. The optimum load condition at the operation frequency for an external load circuit can be estimated by considering the properties of the reactive parasitic elements and the nonlinear current source. For an InGaAs / GaAs pHEMT, active harmonic load-pull considering up to the fifth-order harmonic frequency was experimentally carried out at the fundamental frequency of 20 MHz. By using the estimated optimum impedance condition for an equivalent nonlinear current source, high-frequency amplifiers were designed and fabricated at the 1.9-GHz, 2.45-GHz, and 5.8-GHz bands. The fabricated amplifiers exhibited maximum drain efficiency values of 79%, 80%, and 74% at 1.9 GHz, 2.47 GHz, and 5.78 GHz, respectively.
Scientific journal, English

InGaAs MMIC SPST Switch Based on HPF/LPF Switching Concept With Periodic Structure
Hiroshi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 64, 9, 2863-2870, Sep. 2016, Peer-reviwed, This paper presents the analysis of a novel highpass filter/low-pass filter (HPF/LPF) switching concept. Since an HPF/LPF switching concept has a periodic structure, its equivalent circuit is almost the same as an LPF for the ON-state and is the same as an HPF for the OFF-state. The broadband isolation characteristics with low insertion loss can be achieved by designing its cutoff frequency. A three-stage single pole single throw InGaAs pseudomorphic high electron mobility transistor monolithic microwave integrated circuit switch based on the HPF/LPF switching concept is successfully demonstrated with an insertion loss of less than 1.6 dB and isolation of more than 82 dB below 6 GHz, with a size of 1.1 mm x 1.0 mm. The RF performances are in good agreement with the theoretical calculations. The measured input power of 1-dB insertion loss compression, P1dB, and the measured third-order intercept point, IIP3, are 19 and 27.7 dBm, respectively, at 1.95 GHz. The measured ON-time is 5.5 ns without cable delay. The measured rise time is as fast as 1.4 ns.
Scientific journal, English

Novel Design of Dual-Band Reconfigurable Dipole Antenna Using Lumped and Distributed Elements
Shoichi Onodera; Ryo Ishikawa; Akira Saitou; Kazuhiko Honjo
IEICE TRANSACTIONS ON COMMUNICATIONS, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E99B, 7, 1550-1557, Jul. 2016, Peer-reviwed, A frequency-reconfigurable dipole antenna, whose dual resonant frequencies are independently controlled, is introduced. The antenna's conductor consists of radiating conductors, lumped and distributed elements, and varactors. To design the antenna, current distribution, input impedance, and radiation power including higher-order modes, are analyzed for a narrow-angle sectorial antenna embedded with passive elements. To derive the formulae used, radiation power is analyzed in two ways: using Chu's equivalent circuit and the multipole expansion method. Numerical estimations of electrically small antennas show that dual-band antennas are feasible. The dual resonant frequencies are controlled with the embedded series and shunt inductors. A dual-band antenna is fabricated, and measured input impedances agree well with the calculated data. With the configuration, an electrically small 2.5-/5-GHz dual-band reconfig-urable antenna is designed and fabricated, where the reactance values for the series and shunt inductors are controlled with varactors, each connected in series to the inductors. Varying the voltages applied to the varactors varies the measured upper and lower resonant frequencies between 2.6 and 2.9 GHz and between 5.1 and 5.3 GHz, where the other resonant frequency is kept almost identical. Measured radiation patterns on the H-plane are almost omni-directional for both bands.
Scientific journal, English

Miniaturization of Double Stub Resonators Using Lumped-Element Capacitors for MMIC Applications
Shinichi Tanaka; Takao Katayose; Hiroki Nishizawa; Ken'ichi Hosoya; Ryo Ishikawa; Kazuhiko Honjo
IEICE TRANSACTIONS ON ELECTRONICS, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E99C, 7, 830-836, Jul. 2016, Peer-reviwed, We present a design method for miniaturizing double stub resonators that are potentially very useful for wide range of applications but have limited usage for MMICs due to their large footprint. The analytical design model, which we introduce in this paper, allows for determining the capacitances needed to achieve the targeted shrinking ratio while maintaining the original loaded-Q before miniaturization. To verify the model, 18-GHz stub resonators that are around 40% of the original sizes were designed and fabricated in GaAs MMIC technology. The effectiveness of the proposed technique is also demonstrated by a 9-GHz low phase-noise oscillator using the miniaturized resonator.
Scientific journal, English

Parallel Combination of High-Efficiency Amplifiers with Spurious Rejection for Concurrent Multiband Operation
Jun Enomoto; Haruka Nishizawa; Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
2016 46TH EUROPEAN MICROWAVE CONFERENCE (EUMC), IEEE, EuMC Poster01-26, 1075-1078, 2016, Peer-reviwed, An efficient concurrent multiband power amplifier configuration has been proposed for high-data-rate wireless communication systems. Single-band high-efficiency power amplifiers are designed by adding spurious rejection functions which are embedded in input and output fundamental-frequency matching circuits. And those amplifiers are connected in parallel. In this configuration, significant merits exist in comparison with usual dual-band or broadband amplifiers, especially with regard to distortion characteristics. To confirm this, a 4.5-18.5-GHz-band GaN HEMT amplifier was fabricated, and it exhibited maximum drain efficiencies of 64% and 54% and maximum power added efficiencies of 61% and 41% at 4.49GHz and 8.42 GHz, respectively, on a concurrent operation with a highly suppressed near-band spurious level of less than -38 dBc.
International conference proceedings, English

GaN SPST MMIC Switches Based on HPF/LPF Switching Concept for High Power Applications
Hiroshi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
2016 46TH EUROPEAN MICROWAVE CONFERENCE (EUMC), IEEE, EuMC36-03, 691-694, 2016, Peer-reviwed, This paper describes the demonstrated GaN SPST MMIC switches based on HPF/LPF switching concept for high power applications. The developed MMIC switches indicate high isolation of more than 80-dB with insertion loss of better than 2 dB below 2.4 GHz. The effective chip size is 1.15 x 1.58 mm(2). The measured P1dB of insertion loss is 31.2-dBm. The isolation varies with respect to the input power from about 80-dB at small signal operation to about 40-dB for large signal input. The possible cause is the change of average FET off capacitance. This MMIC switches with HPF/LPF switching concept promises to provide new switch products having high power handling capability with low cost.
International conference proceedings, English

Four-value Multiplexing Orbital Angular Momentum Communication Scheme Using Loop Antenna Arrays
Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
2016 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC2016), IEEE, TH3A-3, -, 2016, Peer-reviwed, A four-value multiplexing orbital angular momentum (OAM) communication scheme is demonstrated using loop antenna arrays. Considering the radiated fields of loop antennas, MIMO communication without signal processing is shown to be realized by controlling the current distribution in a single Fourier expansion coefficient. Through numerical analysis on the current, a single coefficient is shown to be dominant, where the loop perimeter is approximately the integral multiple of the wavelength. For long-range OAM communication, diffraction patterns of the collimated fields with paraboloids are analyzed, and the diffraction is shown to have a greater effect on the higher OAM modes. For short-range communication, fourelement loop antenna arrays are estimated by simulations and measurements. The transmission coefficient between the antennas of the same perimeter is shown to be larger by more than 12 dB than those of a different perimeter for a 1-cm distance. For long-range communication, a collimating configuration is proposed, and the transmission coefficient between the antennas of the same perimeter is shown to be larger by more than 11 dB for a 1-m distance.
International conference proceedings, English

Multiband/Wideband Antennas and Emerging Antenna Technologies
Akira Saitou; Jin Long; Ryo Ishikawa; Kazuhiko Honjo
Proc. of IEEE-APS Topical Conference on Antennas and Propagation in Wireless Communications, 235-238, 07 Sep. 2015, Peer-reviwed
International conference proceedings, English

Analytical expression of broadband characteristics for wide-angle planar sectorial antennas
Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
IEEE-APS Topical Conference on Antennas and Propagation in Wireless Communications (Torino), 235-238, Sep. 2015, Peer-reviwed, Invited
International conference proceedings, English

5.8GHz帯可変焦点型ガウシアンビームアレイアンテナの簡素化
井上泰平; 石川亮; 斉藤昭; 本城和彦
電子情報通信学会論文誌B, 電子情報通信学会, J98-B, 9, 906-913, 01 Sep. 2015, Peer-reviwed
Scientific journal, Japanese

Digital Spatial Modulation Using Dual Scatterers Embedded with Switches for Wireless Power Transmission Applications
Kohei Hasegawa; Ryo Ishikawa; Akira Saitou; Kazuhiko Honjo
IEICE TRANSACTIONS ON ELECTRONICS, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E98C, 7, 709-715, Jul. 2015, Peer-reviwed, A digital spatial modulation method has been demonstrated for a wireless power transmission system at 5.8 GHz. Interference of electromagnetic waves, which are radiated from the dual scatterers, successfully realizes the spatial modulation. The spatial modulation is performed with a digital modulation manner by controlling capacitances embedded in one of the dual scatterers so that the interference of the scattered waves is appropriately changed. Switch MMICs based on p-HEMT technology was newly developed for the spatial modulation. Measured insertion losses of the switch MMIC are 1.0 dB and 14 dB for on and off states at 5.8 GHz, respectively. The isolation is more than 20 dB. With the switch MMIC, digital spatial modulation characteristics were experimentally demonstrated at 5.8 GHz. One-bit amplitude shift keying (ASK) for 1 MHz signal was realized at 5.8 GHz, and two levels were clearly discriminated. The modulation factor is 36%. In addition, 2-bit ASK signal was detected at 7.1 GHz.
Scientific journal, English

Power gain performance enhancement of independently biased heterojunction bipolar transistor cascode chip
Duy Manh Luong; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, 54, 4, 04DF11-1-04DF11-8, Apr. 2015, Peer-reviwed, The purpose of this research is to study the power gain performance of an independently biased cascode structure or a new cascode structure (NCS) in comparison to that of a conventional cascode structure (CCS) at 1.9GHz while investigating the bias conditions. We found that the bias collector current (I-c2) of the common-base (CB) or second-stage transistor is the key factor contributing to the power gain difference between a NCS and a CCS. By employing a monolithic microwave integrated circuit (MMIC) InGaP/GaAs heterojunction bipolar transistor (HBT), simulation and experimental results show that a NCS with higher I-c2 than that of a CCS can offer better power gain performance but less stability compared with a CCS. On the other hand, although a NCS with lower I-c2 than that of a CCS exhibits worse power gain performance compared with a CCS, it can be more stable than a CCS. All of the above indicate that a NCS can deliver superior radio frequency (RF) performance compared with a CCS by setting the appropriate bias conditions. (C) 2015 The Japan Society of Applied Physics
Scientific journal, English

A Miniature Broadband Doherty Power Amplifier With a Series-Connected Load
Shintaro Watanabe; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 63, 2, 572-579, Feb. 2015, Peer-reviwed, A microwave Doherty power amplifier (DPA) consists of a carrier amplifier (CA), a peaking amplifier (PA), and an impedance inverting network. In this paper, a novel DPA topology with neither the impedance inverting network nor offset lines is proposed. This topology enables the enhancement of amplifier bandwidth and achieves a more compact amplifier size. To remove the impedance inverting network and to realize high efficiency at large back-off power level, the output-matching network of the CA is designed to realize high performance both at a low signal power level in the off-state of the PA and at the saturated signal power level. A 1.9-GHz series-connected load Doherty power amplifier without an impedance inverting network is designed and fabricated using GaN HEMTs. The amplifier achieves a power-added efficiency (PAE) of 50% under a 6-dB output back-off from a 34-dBm saturated output power with a PAE of 59%. A maximum PAE higher than 44% is obtained over a frequency range of 1.63-1.98 GHz.
Scientific journal, English

High Isolation MMIC Switch Design Technique Based on Novel High-/Low-Pass Switch Concept
Hiroshi Mizutani; Ryo Ishikawa; Kazuhiko Honjo
2015 45TH EUROPEAN MICROWAVE CONFERENCE (EUMC), IEEE, EuMC02-05, 56-59, 2015, Peer-reviwed, This paper describes the proposal of novel high/low-pass RF switch concept. This proposed RF switch concept is completely different from the conventional switch circuits because the broadband perfect reflection occurs in the off-state, which is essential to achieve broadband high isolation characteristics. By changing the gate bias of FETs between two states of high and low voltages, two functions can be switched between high-pass filter and low-pass filter. By utilizing the stopband of high-pass filter below its cut-off frequency, extremely high isolation can be achieved. And also, broadband low insertion loss can be obtained by using the passband below its cut-off frequency of low-pass filter. High isolation of more than 79 dB SPST MMIC switch with less than 1.6 dB insertion loss have been successfully demonstrated below 6 GHz by using this novel switch concept with small chip size of 1.1 mm x 1.0 mm.
International conference proceedings, English

High-Efficiency DC-to-RF/RF-to-DC Interconversion Switching Module at C-Band
Ryo Ishikawa; Kazuhiko Honjo
2015 45TH EUROPEAN MICROWAVE CONFERENCE (EUMC), IEEE, EuMC17-02, 295-298, 2015, Peer-reviwed, Both high-efficiency DC-to-RF and RF-to-DC conversions have been performed on a module with an impedance switching circuit connected at the gate side of a main GaN HEMT transistor. Here, two circuit configurations for an impedance switching circuit are proposed that use short/capacitance and open/short(inductance) switching circuits. These can be selected and utilised depending on the characteristics of the main transistor. At 5.36 GHz, the fabricated module delivered a maximum DC-to-RF efficiency (drain efficiency) of 76% and a maximum RF-to-DC efficiency of 66%.
International conference proceedings, English

High Efficiency GaN HEMT Power Amplifier/Rectifier Module Design Using Time Reversal Duality
Kazuhiko Honjo; Ryo Ishikawa
2015 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS), IEEE, Session P-1, 2015, Peer-reviwed, A general design theory for high efficiency microwave power amplifiers and rectifiers is presented using the time reversal duality concept. Effective techniques for achieving high efficiency microwave power amplifiers can also be implemented in the design of high efficiency rectifiers. As a design example, a harmonic reactive load type (class-R) GaN-HEMT power amplifier and its time reversed dual rectifier were developed at 5.4GHz. The fabricated amplifier delivered a maximum drain efficiency of 82%, whereas the rectifier presented 78% power efficiency. A DC-DC conversion efficiency of 47% was measured with the pulse-width modulation (PWM) technique for a wide dynamic power range of 90 mW to 860 mW.
International conference proceedings, English

Optimum Load Impedance Estimation for High-Efficiency Microwave Power Amplifier Based on Low-Frequency Active Multi-Harmonic Load-Pull Measurement
Yao Tao; Ryo Ishikawa; Kazuhiko Honjo
2015 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), VOLS 1-3, IEEE, TU1G-4, 2015, Peer-reviwed, An accurate design method for high-efficiency microwave power amplifiers based on a low-frequency active multi-harmonic load-pull measurement has been developed to obtain the optimum load impedance. Nonlinear capacitances as parasitic elements in a transistor are taken into account to improve accuracy of the optimum load impedance estimation in comparison with a previous method in which they are approximated with linear capacitances. A GaN HEMT amplifier designed and fabricated by the proposed method achieved a maximum power added efficiency (PAE) of 74% with 30.5 dBm output power at 2.13 GHz. As a comparison, a GaN HEMT amplifier designed and fabricated by the previous method exhibited maximum PAE of 64% with 31.0 dBm output power at 2.14 GHz, which was degraded than that for the proposed method.
International conference proceedings, English

熱メモリ効果解析のための大信号HEMT モデル用多段はしご型RC 熱回路のパルス応答評価による実験的パラメータ抽出手法
吉田慎悟; 石川亮; 本城和彦
電子情報通信学会C論文誌, 電子情報通信学会, J97-C, 12, 456-462, 01 Dec. 2014, Peer-reviwed
Scientific journal, Japanese

マイクロ波電力増幅器の統一的設計理論とその応用
本城和彦; 高山洋一郎; 石川亮
電子情報通信学会C論文誌, 電子情報通信学会, J97-C, 12, 446-455, 01 Dec. 2014, Peer-reviwed, Invited
Scientific journal, Japanese

Comparison of Power Gain Performance between Conventional and Independently Biased HBT Cascode Chips
Luong Duy Manh; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
Proc. of International Conference on Solid State Devices and Materials, JSAP, PS-6-1, 120-121, 08 Sep. 2014, Peer-reviwed
International conference proceedings, English

A 2.1/2.6 GHz Dual-Band High-Efficiency GaN HEMT Amplifier with Harmonic Reactive Terminations
Jun Enomoto; Ryo Ishikawa; Kazuhiko Honjo
2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC), IEEE, 544-547, 2014, Peer-reviwed, A dual-band high-efficiency GaN HEMT amplifier with harmonic reactive source and load impedances has been developed at the 2.1-GHz and 2.6-GHz bands. Many circuit components are required for this type of amplifier, since many frequencies have to be treated, which induces circuit loss. Here, a design strategy to avoid an efficiency reduction due to circuit loss is introduced. The fabricated dual-band GaN HEMT amplifier has achieved maximum power-added efficiencies (PAEs) of 72% and 61% with 36.7- and 37.1- dBm output powers at 2.13 and 2.6 GHz, respectively.
International conference proceedings, English

A High-Efficiency Low-Distortion Cascode Power Amplifier Consisting of Independently Biased InGaP/GaAs HBTs
Yuki Takagi; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
IEICE TRANSACTIONS ON ELECTRONICS, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E97C, 1, 58-64, Jan. 2014, Peer-reviwed, A microwave power amplifier with independently biased InGaP/GaAs HBTs is proposed, and its superior performance is confirmed. Using harmonic balance simulation, the optimal bias conditions for an amplifier with two independently biased InGaP/GaAs HBTs were investigated with the aim of achieving high-efficiency low-distortion performance. A 1.9-0Hz-band cascode power amplifier was designed and fabricated. Power efficiencies and third-order intermodulation distortions (IMD3) for the fabricated amplifier were estimated. The collector bias voltage of the first stage transistor mainly affects power-added efficiency (PAR). The base bias current of the first-stage HBT mainly affects IMD3 characteristics, and that of the second-stage HBT mainly affects PAR. The proposed amplifier shows superior performance when compared to a conventional cascode amplifier. The amplifier achieved a maximum PAR of 68.0% with an output power of 14.8 dBm, and IMD3 better than -35 dBc with a PAE of 25.1%, for a maximum output power of 10.25 dBm at 1.9 GHz. A PAE of more than 60% was achieved from 1.87 to 1.98 GHz.
Scientific journal, English

Novel Frequency Tunable CRLH-TL for Reconfigurable Wireless Systems
Hiroshi Mizutani; Naoya Watanabe; Ryo Ishikawa; Kazuhiko Honjo
2014 INTERNATIONAL CONFERENCE ON ELECTROMAGNETICS IN ADVANCED APPLICATIONS (ICEAA), IEEE, 434-437, 2014, Peer-reviwed, This paper presents the novel frequency tunable CRLH-TL (Composite Right/Left-Handed transmission line) using varactor diodes for the reconfigurable wireless systems. Varactor diodes are implemented into the CRLH unit cell as the series capacitor. Proposed frequency tunable CRLH-TL indicates the variable EBG (Electromagnetic Band Gap) bandwidths with respect to the bias voltages. The demonstrated tunable CRLH-TL dominantly shows the broadside far-field radiation patterns for n=-1 resonance and the backward radiation patterns for n=-2 resonance.
International conference proceedings, English

Novel Design of Dual-band Reconfigurable Antennas Using Lumped-Elements and Varactors Located Inside Antenna's Conductor
S. Onodera; A. Saitou; R. Ishikawa; K. Honjo
2014 IEEE-APS TOPICAL CONFERENCE ON ANTENNAS AND PROPAGATION IN WIRELESS COMMUNICATIONS (APWC), IEEE, 221-224, 2014, Peer-reviwed, A frequency reconfigurable dualband antenna is demonstrated, where the antenna's conductor consists of a radiating conductor, lumped and distributed elements, and varactors. An analytical expression for current distribution, input impedance, and radiated power is derived by connecting electromagnetic fields inside and outside the antenna's sphere for an electrically small antenna. With the formulae, input impedances are numerically estimated, and dual resonant frequencies are shown to be controlled almost independently by varying the value of a shunt inductor or a series inductor. The reconfigurable antenna is fabricated, where the varied reactances for the inductors are realized with series resonant circuits consisting of an inductor and a varactor. Measured upper and lower resonant frequencies are shown to be controlled by the applied voltage to the varactor between 2.60 and 2.91 GHz, and between 5.10 and 5.32 GHz, where the other resonant frequencies are almost identical.
International conference proceedings, English

Analysis on Rejection Band for a Practical Broadband Balun using an Asymmetric Coupled-line in Free Space
Daiki Endo; Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
2014 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), IEEE, WE1B-5, 28-30, 2014, Peer-reviwed, A practical broadband balun with a higher band-edge frequency for a differential-mode antenna is demonstrated. The practical balun consists of an asymmetric broadside coupled line in free space and via-pads to connect to the antenna or soldering pads on the same surface. The rejection band for the balun with different configurations of the pads is analyzed with mixed-mode S-parameters, and the upper band-edge frequency is shown to increase by using the proposed pad configuration. A balun consisting of a 4-mm-long broadside coupled line and the proposed pads is designed and fabricated. The measured rejection band frequency is 13.4 GHz, and is higher by 2.0 GHz than that with conventional pads. The measured insertion loss is less than 2 dB between 0.41 and 12.3 GHz.
International conference proceedings, English

A 5.8-GHz Reconfigurable Power Divider for Wireless Power Transfer
Yusuke Ohta; Ryo Ishikawa; Kazuhiko Honjo
2014 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), IEEE, TH4D-1, 693-695, 2014, Peer-reviwed, A Wilkinson-type reconfigurable power divider using varactor diodes has been designed and fabricated at 5.8 GHz. To vary the power-dividing ratio, T-type impedance transformers including varactor diodes were used instead of quarter-wavelength impedance transformers. In addition, a slight adjustment was applied to improve the return loss characteristics. The fabricated power divider exhibited a variation in the power-dividing ratio from -3.5 dB to 3.5 dB with an insertion loss of less than 2.1 dB, return losses of more than 11.0 dB, and an isolation of more than 14.8 dB at 5.8 GHz.
International conference proceedings, English

Analytical Characteristic Expression for Dualband Antennas Embedded with Elements inside the Antenna
Akira Saitou; Shoichi Onodera; Ryo Ishikawa; Kazuhiko Honjo
2014 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), IEEE, FR1F-1, 971-973, 2014, Peer-reviwed, An analytical expression for current distribution, input impedance, and radiation power including higher order modes, is derived for a thin sectorial antenna embedded with lumped and distributed elements. To obtain the formulae, radiation power is analyzed in two ways using Chu's equivalent circuit and the multipole expansion method. By numerical estimation of the formulae for electrically small antennas with the elements, dualband antennas are shown to be realized. The dualband antennas are fabricated, and measured input impedances agree well with the calculated data. Measured radiation patterns are omni-directional in the H-plane and the figure-of-eight in the E-plane for both the bands.
International conference proceedings, English

Two Signal Power Level Design for Shunt-Connected Type GaN HEMT Doherty Power Amplifier without a Quarter-Wave Inverter
Yosuke Iguchi; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
2014 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), IEEE, FR2B-4, 1004-1006, 2014, Peer-reviwed, A 1.9-GHz shunt-connected-type GaN HEMT Doherty power amplifier without a quarter-wave inverting network is designed and fabricated by introducing a two-RF-level circuit design procedure. Matching circuits for the carrier and peaking amplifiers are designed to realize optimum efficiency at low-RF (peaking amplifier off) and high-RF (saturated) signal levels. The compact amplifier achieved a maximum power added efficiency (PAE) higher than 50% at the 310-MHz bandwidth. The maximum PAE at an output power above 30 dBm was higher than 50% within the 1.68-1.99 GHz frequency range. A PAE higher than 40% at a 6-dB back-off from input power achieving maximum PAE was obtained over a wide frequency range of 1.67-1.99 GHz.
International conference proceedings, English

Efficient Supply Power Control by PWM Technique for Microwave Wireless Power Transfer Systems
Ryo Ishikawa; Kazuhiko Honjo
2014 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), IEEE, FR03C-3, 1101-1103, 2014, Peer-reviwed, A pulse-width modulation (PWM) technique has been applied for efficient supply power control in microwave wireless power transfer systems. For this evaluation, a high-efficiency GaN HEMT amplifier and rectifier operating at the 5.4-GHz band have been fabricated, which are used as a DC-to-RF and RF-to-DC converter, respectively. The fabricated amplifier and rectifier delivered a maximum drain efficiency of 82% at 5.43 GHz and a maximum RF-to-DC efficiency of 78% at 5.45 GHz, respectively. In the evaluation of the supply power control, a total system efficiency of more than 47% was maintained for a supply power change from 90 to 860mW by using the PWM technique.
International conference proceedings, English

Analytical Design Method for a Low-Distortion Microwave InGaP/GaAs HBT Amplifier Based on Transient Thermal Behavior in a GaAs Substrate
Ryo Ishikawa; Junichi Kimura; Kazuhiko Honjo
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 3, 10, 1705-1712, Oct. 2013, Peer-reviwed, Based on the transient thermal behavior in a GaAs substrate, the distortion caused by the self-heating effect in an InGaP/GaAs heterojunction bipolar transistor (HBT) has been analytically compensated. The temperature-time variation in a transistor depends on the thermal characteristics of a semiconductor substrate at the base-band range. For a wideband digital modulated signal as input, a multistage thermal resistor-thermal capacitor ladder circuit is used as a model to emulate the thermal characteristics. The distortion analysis is based on Taylor and Volterra series expansion techniques including both electrical and thermal effects. In addition, a compensation condition for the distortion caused by the thermal influence is also successfully derived based on distortion analysis. The validity of the proposed analytical method is shown for an InGaP/GaAs HBT power amplifier operating at 1.95 GHz. The analytical design results are in good agreement with the measured results.
Scientific journal, English

Spatially Modulated Communication Method Using Dual Scatterers Embedded with Lumped Elements for Wireless Power Transmission
Akira Saitou; Kohei Hasegawa; Ryo Ishikawa; Kazuhiko Honjo
IEICE TRANSACTIONS ON COMMUNICATIONS, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E96B, 10, 2425-2430, Oct. 2013, Peer-reviwed, A novel spatially modulated communication method, appropriate for wireless power transmission applications at 5.8 GHz, is proposed using dual scatterers embedded with lumped elements. Analytical expression for the received wave in the spatial modulation is derived, and the characteristics are verified with simulation and measurement by varying the embedded capacitor. The maximum measured variation of the received voltage is more than 15 dB and that of the phase is more than 270 degrees at 5.8 GHz. The estimated amplitude modulation factor is more than 70%. Using the data obtained, we estimate the practical received waveforms modulated by the applied voltage to a varactor for the amplitude modulation scheme.
Scientific journal, English

Bi-directional wireless power transfer technology for wireless sensor/power networks
K. Ota; H. Mizutani; R. Ishikawa; K. Honjo
Proceedings of the 2013 IEEE-APS Topical Conference on Antennas and Propagation in Wireless Communications, IEEE APWC 2013, IEEE Computer Society, 786-789, 2013, Peer-reviwed, This study approaches a new proposal for 'the wireless power networks (WPNs)'. Injecting the wireless ad-hoc networks with newly bi-directional power transfer has the advantage of stabilizing networks operation when a power source happens to broke down. This research putting network at forefront, proves that make a fundamental demonstration for bi-directional wireless power transfer (BD-WPT) system using an electric resonant coupler to an experimental level of WPNs. There is also the fact that, a space modeling deliberates an equivalent circuit of the coupler. WPNs are thought to make a large contribution to stable operation, and consequently making save wireless sensor networks. © 2013 IEEE.
International conference proceedings, English

Novel Active CRLH Transmission Lines Incorporating FETs for Reconfigurable Antennas
H. Mizutani; K. Ota; R. Ishikawa; K. Honjo
2013 7TH INTERNATIONAL CONGRESS ON ADVANCED ELECTROMAGNETIC MATERIALS IN MICROWAVES AND OPTICS (METAMATERIALS 2013), IEEE, 169-171, 2013, Peer-reviwed, In this paper, the novel active composite right/left-handed transmission lines (CRLH-TLs) are presented incorporating FETs for the reconfigurable antennas. The demonstrated CRLH-TL with three FETs has four states with respect to the bias combination of the FETs. The measured characteristics of the developed active CRLH-TL indicate two states of the radiation and the reflection with the bias combination. In the case of the radiation state, the backward radiations are observed from the EM simulation in the left-handed (LH) region. The proposed active CRLH-TLs incorporating FETs provide the reconfigurable characteristics for the leaky wave antenna.
International conference proceedings, English

Microwave Power Transfer Evaluation at 2.45 GHz Using a High-Efficiency GaAs HEMT Amplifier and Rectifier
Ryo Ishikawa; Kazuhiko Honjo
2013 EUROPEAN MICROWAVE CONFERENCE (EUMC), IEEE, 916-919, 2013, Peer-reviwed, Microwave power transfer has been evaluated at 2.45GHz by using a high-efficiency InGaAs/GaAs pHEMT amplifier and rectifier. The same type of HEMT and harmonic treatment circuit were used for both the amplifier and the rectifier. Harmonic reactive terminations up to the fifth order were applied to the harmonic treatment circuits to obtain a high-efficiency characteristic. The fabricated amplifier and rectifier delivered a maximum drain efficiency of 78% and a maximum RF-to-DC efficiency of 77% at 2.45 GHz, respectively. In addition, a total DC-to-DC efficiency of 57% for the microwave power transfer via a 0.5-m coaxial cable was obtained by using the fabricated amplifier and rectifier.
International conference proceedings, English

Analytical Expression of Linear Antenna's Characteristics Using Multipole Expansion and Chu's Equivalent Circuit
Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
2013 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC 2013), IEEE, F2F-2, 585-587, 2013, Peer-reviwed, Analytical expression including higher-order modes for a linear dipole antenna is derived with the multipole expansion and Chu's equivalent circuits. Current distribution on the antenna's conductor and loss caused by the radiation are consistently combined. Input power at the port is approximated to be guided totally on the conductor up to an effective antenna's radius, and to propagate in free space beyond the radius. The circuit for the power to propagate in free space is expressed by Chu's equivalent circuits for all the TM modes. With the derived formulae, numerical estimations of the current distributions and input impedances are shown up to 3rd-order-mode's resonant frequency. The numerical data are compared with measured data for the antennas with different line widths, and the data are shown to agree well.
International conference proceedings, English

Multi-band Reconfigurable Antennas Embedded with Lumped-Element Passive Components and Varactors
Shoichi Onodera; Ryo Ishikawa; Akira Saitou; Kazuhiko Honjo
2013 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC 2013), IEEE, W2D-2, 137-139, 2013, Peer-reviwed, Frequency reconfigurable dual-band antennas with varactor diodes have been demonstrated. An equivalent circuit that takes both coupling with free space and an antenna conductor embedded with lumped-elements into consideration is proposed for the design of reconfigurable antennas. By means of the equivalent circuit, reconfigurable antennas that independently control dual-band resonant frequencies were designed and fabricated with a parallel circuit with an inductor and a varactor. The lower resonant frequency was successfully controlled between 1.60 and 1.91 GHz, and the upper resonant frequency was controlled between 3.32 and 3.71 GHz. Measured gains were more than -9.8 dBi in the lower band, and more than -7.3 dBi in the upper band, respectively. To improve the gain, a reconfigurable antenna with a series circuit of an inductor and a varactor was also fabricated for the lower band. Measured gains have been improved to more than -4 dBi in the lower band.
International conference proceedings, English

A 1.2-2.0 GHz-band GaAs pHEMT cascode power amplifier MMIC consisting of independently biased transistors
Satoshi Tasaki; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
Asia-Pacific Microwave Conference Proceedings, APMC, P1-14, 722-724, 2013, Peer-reviwed, An L-band wideband cascode power amplifier MMIC with independently biased GaAs pHEMTs is developed. This amplifier can independently control distortion and power-efficiency, achieved a power-added efficiency (PAE) above 53% from 1.2 to 2.0 GHz and third-order intermodulation distortion (IMD3) better than -40 dBc with a maximum PAE of 33.3% for a maximum output power of 17.0 dBm, and showed superior performance compared to a conventional cascode amplifier. © 2013 IEEE.
International conference proceedings, English

Frequency characteristic of power efficiency for 10 W/30 W-class 2GHz band GaN HEMT amplifiers with harmonic reactive terminations
Tomohiro Yao; Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo; Hiroyoshi Kikuchi; Takashi Okazaki; Kazuhiro Ueda; Eiichiro Otobe
Asia-Pacific Microwave Conference Proceedings, APMC, P1-21, 745-747, 2013, Peer-reviwed, An increase in amplifier efficiency is generally accompanied by a narrow bandwidth characteristic, especially when used with distributed transmission lines, since higher harmonics have to be treated. The frequency dependence of harmonic reactive terminations using transmission lines has been discussed for a high-efficiency amplifier design. In simulation, the designed amplifiers showed steep efficiency degradation due to a small source-side impedance shift for the second-order harmonic frequency. Therefore, both the source- and load-side circuits have to be optimized simultaneously. Fabricated 10-W and 30-W class GaN HEMT amplifiers including DC bias circuits exhibited a maximum drain efficiency of 81% at 1.98GHz and 77% at 1.95 GHz, respectively. © 2013 IEEE.
International conference proceedings, English

Reversible High Efficiency Amplifier/Rectifier Circuit for Wireless Power Transmission System
Ryo Ishikawa; Kazuhiko Honjo
2013 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC 2013), IEEE, W1F-1, 74-76, 2013, Peer-reviwed, A reversible high-efficiency amplifier/rectifier circuit using one transistor has been proposed. For the gate side of the transistor, an input circuit for the amplifier and a gate adjusting circuit for the rectifier are prepared. By switching the circuits, the operation mode is changed. For the drain side of the transistor, a harmonic treatment circuit can be shared by both operations. The harmonic treatment induces high-efficiency operation not only for the amplifier, but also for the rectifier. To verify both operations, a GaAs pHEMT amplifier and a rectifier which varied only the gate-side circuit were designed and fabricated at 5.8 GHz. The fabricated amplifier exhibited a maximum drain efficiency of 71%, and the fabricated rectifier exhibited an RF-to-DC conversion efficiency of 68%.
International conference proceedings, English

Ultra High Efficiency Microwave Power Amplifier for Wireless Power Transmission (Invited Paper)
Kazuhiko Honjo; Ryo Ishikawa; Yoichiro Takayama
Proceedings of the 42nd European Microwave Conference, APMC-02, 1339-1342, 29 Oct. 2012, Peer-reviwed, Invited
International conference proceedings, English

Parasitic-Element Compensation Based on Factorization Method for Microwave Inverse Class-F/Class-F Amplifiers
Osamu Miura; Ryo Ishikawa; Kazuhiko Honjo
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 22, 10, 521-523, Oct. 2012, Peer-reviwed, A novel parasitic-element compensation design method with a combination of factorization and coefficient comparison for microwave inverse class-F/class-F amplifiers is proposed. This novel method is applicable to all circuit topologies, including L - C parallel and series resonance circuits, and ladder circuits with arbitrary order of the higher harmonic frequencies. The validity of the proposed method has been checked with a fabricated 1.9 GHz inverse class-F GaN-HEMT power amplifier, considering harmonic frequencies up to the fourth order. A drain efficiency of 77% and power added efficiency of 70% were obtained at 1.88 GHz.
Scientific journal, English

Novel Spatial Modulation Method Using Dual Scatterers for Wireless Power Transmission
Akira Saitou; Kohei Hasegawa; Ryo Ishikawa; Kazuhiko Honjo
Proc. of 2012 International Symposium on Antennas and Propagation, 1E3-2(162-165), Oct. 2012, Peer-reviwed
International conference proceedings, English

Spatial Modulation Module Consisting of a Microstrip Array Antenna and Dual Scatterers for Wireless Power Transmission
Taihei Inoue; Kohei Hasegawa; Akira Saitou; Ryo Ishikawa; Kazuhiko honjo
Proc. of 2012 International Symposium on Antennas and Propagation, 2E2-3(459-462), Oct. 2012, Peer-reviwed
International conference proceedings, English

5.65 GHz High-Efficiency GaN HEMT Power Amplifier With Harmonics Treatment up to Fourth Order
Masahiro Kamiyama; Ryo Ishikawa; Kazuhiko Honjo
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 22, 6, 315-317, Jun. 2012, Peer-reviwed, A high-efficiency GaN HEMT power amplifier with harmonics treatment up to the fourth order has been developed at the 5.8 GHz band. The harmonics treatment was applied by considering the influence of feedback and shunt capacitance in the GaN HEMT, to reduce the average power consumption in a GaN HEMT including parasitic elements. The fabricated GaN HEMT amplifier delivered a maximum power-added efficiency of 79% and a maximum drain efficiency of 90% at 5.65 GHz, and the saturated output power was 33.3 dBm. This value represents state-of-the-art C-band performance efficiency.
Scientific journal, English

Extension of EOSE Method to Weak Nonlinear Systems and Its application to InGaP/GaAs HBT MMIC Parallel Tracks
Hirobumi Inoue; Ryo Ishikawa; Kazuhiko Honjo
Proc. of Joint Conference of "International Conference on Electronics Packaging" and "IMAPS All Asia Conference" (ICEP-IAAC 2012), FD4-3, Apr. 2012, Peer-reviwed
International conference proceedings, English

A High-Efficiency Low-Distortion GaN HEMT Doherty Power Amplifier With a Series-Connected Load
Satoshi Kawai; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 60, 2, 352-360, Feb. 2012, Peer-reviwed, A distortion reduction method for a newly developed GaN HEMT Doherty amplifier (DA) with a series-connected load operating at 1.8 GHz is presented. Differing from conventional DAs with shunt-connected loads, the newly developed DA with a series-connected load has high input impedance, resulting in low-loss impedance matching and high-efficiency power combining. A distortion cancellation mechanism and its condition are derived, where odd-order nonlinear factors of transistors are considered, so as to retain inherent distortion cancellation between a peaking amplifier and a carrier amplifier. The validity of the design method is demonstrated using the developed 1.8-GHz GaN HEMT DA with a series-connected load. The third-order intermodulation distortion of the DA is improved by more than 15 dB at output powers from 5 to 20 dBm, compared to the case giving priority to power efficiency. The developed amplifier delivers a power-added efficiency (PAE) of 31% at an output power of 24 dBm, corresponding to 10-dB input backoff from a saturated output power of 31 dBm with a PAE of 58%. The proposed distortion reduction method can also be applied to shunt-connected-load-type amplifiers of other devices.
Scientific journal, English

Spatially Modulated Communication Method Using Dual Scatterers for Wireless Power Transmission
Kohei Hasegawa; Ryo Ishikawa; Akira Saitou; Kazuhiko Honjo
2012 42ND EUROPEAN MICROWAVE CONFERENCE (EUMC), IEEE, 967-970, 2012, Peer-reviwed, A novel spatially modulated communication method with electrically controlled dual scatterers has been proposed for wireless power transmission systems. Electromagnetic wave interference produced by the scatterers forms the spatial modulation, whose precise mechanism has been successfully formulated using the array factor theory. The scatterers are formed by lumped-element embedded miniature antennas, which are short-circuit terminated. One of those scatterers includes an integrated voltage-controlled varactor for changing the array factor. For a frequency range from 5.5 to 6.2 GHz, a fabricated module exhibits an excellent spatial modulation potential with a dynamic range of 9.6 to 19.9 dB. The spatial modulation experiment was carried out using base-band signals such as sine-waves and square-waves. A measured AM-modulation factor of 60% was achieved.
International conference proceedings, English

Experimental Design Method for GHz-Band High-Efficiency Power Amplifiers Based on MHz-Band Active Harmonics Load-Pull Technique
Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
2012 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC 2012), IEEE, 478-480, 2012, Peer-reviwed, We propose an experimental design method for GHz-band high-efficiency power amplifiers based on a MHz-band active load-pull technique that includes harmonics tuning. By considering reactive parasitic elements in the transistor, an optimum load condition in the GHz-band can be predicted with the MHz-band evaluation method. The active load-pull system is easily constructed by using a commercial arbitrary waveform generator and oscilloscope. Therefore, a load circuit design depending on the specific properties of the transistor can easily be achieved. A load circuit for a 1.9-GHz operation has been experimentally designed based on 20-MHz-band active load-pull measurement.
International conference proceedings, English

A Broadband Doherty Power Amplifier Without a Quarter-Wave Impedance Inverting Network
Shintaro Watanabe; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
2012 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC 2012), IEEE, 361-363, 2012, Peer-reviwed, A new Doherty power amplifier topology without a quarter-wave impedance inverting network is proposed. This topology enables the enhancement of amplifier bandwidth and achieves a more compact amplifier size. In order to remove an inverting network, the output matching network of the carrier amplifier is designed to realize high performance both at a low-RF level in the off-state of a peaking amplifier and at the RF saturation level. A 1.9-GHz Doherty amplifier without a quarter-wave impedance inverting network was designed and fabricated using GaN HEMTs. A series-connection-type amplifier using an output-combining balun was realized in a lumped-element circuit configuration. The amplifier achieved a power-added efficiency ( PAE) of 51% at an output power of 29 dBm under an 11-dB input back-off from a 34-dBm saturated output power with a power-added efficiency of 59%. A maximum PAE higher than 48% was obtained over a frequency range of 1.67 to 1.97 GHz.
International conference proceedings, English

Parameter Extraction of c- and pi- modes for Broadband Balun Using an Asymmetric Coupled Line
Akira Saitou; Ryo Ishikawa; Kazuhiko Honjo
2012 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC 2012), IEEE, 22-24, 2012, Peer-reviwed, Miniature broadband 1: 1 baluns for differential mode antennas are exhibited with an asymmetric broadside coupled line in an inhomogeneous medium. To design characteristics of a balun for both the in-band and the rejection band, c-and pi -mode parameters for the coupled lines are extracted by both simulation and measurement. The rejection band of the broadband balun is shown to be caused by the c-mode transmission. With the extracted parameters, optimal line dimensions are obtained for 50 Omega single-mode input and differential-mode output port impedances. Measured fractional bandwidth is as wide as 178% for the 0.2-mm-wide broadside coupled line in a 1-mm-thick multi-layer FR-4 substrate.
International conference proceedings, English

Analytical Design Method for Thermal Memory Effect Compensation Circuit in Microwave Power Amplifiers
Ryo Ishikawa; Junichi Kimura; Kazuhiko Honjo
Proceedings of Asia Pacific Microwave Conference 2011, TU5P-27, 315-318, Dec. 2011, Peer-reviwed
International conference proceedings, English

High-Efficiency, Low-Distortion Microwave Cascode Power Amplifier with Independently Biased AlGaN/GaN HEMTs
Ryo Ishikawa; Yoichiro Takayama; Kazuhiko Honjo
Proc. of 2011 Korea-Japan Microwave Conference, TH1-5-2(78-81), Nov. 2011, Peer-reviwed
International conference proceedings, English

A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier
Akihiro Ando; Yoichiro Takayama; Tsuyoshi Yoshida; Ryo Ishikawa; Kazuhiko Honjo
IEICE TRANSACTIONS ON ELECTRONICS, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E94C, 7, 1193-1198, Jul. 2011, Peer-reviwed, A novel predistortion technique using an automatic average-power bias controlled diode is proposed to compensate the complicated nonlinear characteristics of a microwave class-F power amplifier using an AlGaN/GaN HEMT. The optimum value for diode bias voltage is automatically set according to detected input average RF power level. A high-efficiency 1.9 GHz class-F GaN HEMT power amplifier with the automatic average-power bias control (ABC) diode linearizer achieves an improved third order inter-modulation distortion (IMD3) of better than -45 dBc at a smaller than 6 dB output power back-off from a saturated output power of 27 dBm, without changing drain efficiency. The adjacent channel leakage power ratio (ACPR) for 1.9 GHz W-CDMA signals is below -40 dBc at output power levels of smaller than 20 dBm for the class-F power amplifier.
Scientific journal, English

UWB Active Balun Design with Small Group Delay Variation and Improved Return Loss
Kyoung-Pyo Ahn; Ryo Ishikawa; Kazuhiko Honjo
IEICE TRANSACTIONS ON ELECTRONICS, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E94C, 5, 905-908, May 2011, Peer-reviwed, Different from distributed baluns, active baluns have group delay variations in the lower bands related to inherent internal capacitances and resistance in transistors. A negative group delay (NGD) circuit is employed as a compensator of group delay variation for an ultrawideband (UWB) active balun. First, three-cell NGD circuit is inserted into a simple active balun circuit for realizing both group delay compensation and return loss improvement. The simulated results show a group delay variation of 4.8 Ps and an input return loss of above 11.5 dB in the UWB band (3.1-10.6 GHz). Then, a pair of one-cell NOD circuits is added to reduce the remaining group delay variation (3.4 Ps in simulation). The circuit with the NOD circuits was fabricated on an InGaP/GaAs HBT MMIC substrate. The measured results achieved a group delay variation of 7.7 Ps, a gain variation of 0.5 dB, an input return loss of greater than 10 dB, and an output return loss of larger than 8.1 dB in the UWB band.
Scientific journal, English

Distributed class-F/inverse class-F circuit considering up to arbitrary harmonics with parasitics compensation
Ryo Ishikawa; Kazuhiko Honjo
2011 IEEE MTT-S International Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications, IMWS-IWPT 2011 - Proceedings, 29-32, 2011, Peer-reviwed, Class-F and inverse class-F load circuits that can be treated up to arbitrary harmonics have been presented. The class-F and inverse class-F load circuits are designed so that influence of parasitic elements at a transistor is compensated. By using distributed circuit elements, the class-F and inverse class-F amplifier can operate at C-band. The design method mainly for the inverse class-F load circuit is described. Using ideal transmission line model, a designed inverse class-F considering up to the fifth order harmonics exhibits power added efficiency of about 80% in simulation. © 2011 IEEE.
International conference proceedings, English

Miniature differential-mode dual-band antenna module embedded with broadband balun
Akira Saitou; Ryo Ishikawa; Yutaka Aoki; Kazuhiko Honjo
ASIA-PACIFIC MICROWAVE CONFERENCE 2011, IEEE, 1298-1301, 2011, Peer-reviwed, A miniaturized dual-band differential-mode antenna with a broadband 1: 1 balun is integrated in a 1-mm thick multi-layer PCB substrate. A broadband balun for the 2.5 GHz and 5.2 GHz dual-band, was designed and fabricated with a broadside-coupled line structure. With a proposed deembedding method, mixed-mode S-parameters of the unit balun were extracted with measured data. Simulated and measured return losses were better than 12 dB in the dual-band. With the balun, a miniaturized dual-band antenna embedded with lumped-elements was integrated. The lumped elements were also used for impedance-matching with the balun. The size is 60 % smaller than the half-wave dipole antenna. Measured return loss of the integrated antenna connected to a coaxial cable was 15.3 dB at 2.5 GHz and 24.1 dB at 5.2 GHz. Measured gain was almost omni-directional in both the bands. The maximum gain was -0.5 dBi at 2.5 GHz and 1.1 dBi at 5.2 GHz.
International conference proceedings, English

Spatial Modulation using Array Factor Control for Smart Grid Wireless Power Transmission
Kohei Hasegawa; Yuuya Hoshino; Ryo Ishikawa; Akira Saitou; Kazuhiko Honjo
ASIA-PACIFIC MICROWAVE CONFERENCE 2011, IEEE, 837-840, 2011, Peer-reviwed, A novel spatial modulation method has been proposed for the smart grid wireless power transmission systems. In this method, signals are applied to reflectors placed near antennas of a main power transmission system, and a part of the main beam is modulated by the reflectors, with the minimum influence to the main power beam. The reflector is terminated by a variable impedance device which is controlled by base-band signals. Thus, a directivity including phase shift is modulated. To analyze the system, the array factor theory was used. To demonstrate validity of the proposed method, an experiment using a monopole antenna and a monopole reflector were carried out, where AM modulation index of 6% was observed in a specified direction.
International conference proceedings, English

Analytic Parameter Determination for Thermal Memory Effect Compensation Circuit in Microwave InGaP/GaAs HBT Power Amplifiers
Ryo Ishikawa; Junichi Kimura; Kazuhiko Honjo
ASIA-PACIFIC MICROWAVE CONFERENCE 2011, IEEE, 315-318, 2011, Peer-reviwed, An analytical design method based on Volterra series including both electrical effects and thermal effects is presented for compensating thermal memory effects in microwave power amplifiers. By using an electrical memory-effect-generation circuit consisting of a multi-stage RC ladder network, the thermal memory effect is directly canceled. Analytical formulas for this canceling condition and circuit parameters have been successfully derived. The validity of the proposed analytical method has been shown for an InGaP/GaAs HBT power amplifier operating at 1.95 GHz. The analytical design results are in good agreement with measured results.
International conference proceedings, English

Microwave Inverse Class-F GaN HEMT Amplifier Circuit using Internal Harmonic Treatment Network
Tsuyoshi Toshida; Ryo Ishikawa; Kazuhiko Honjo
電子情報通信学会Ｃ論文誌, The Institute of Electronics, Information and Communication Engineers, J93-C, 12, 557-564, Dec. 2010, Peer-reviwed, マイクロ波帯で使用する高出力トランジスタパッケージには,50Ω系での使用を目的にパッケージ内のトランジスタチップ近傍に小型内部整合回路が設けられている.一方で,高効率動作を実現するF級,逆F級などではトランジスタ近傍で高調波処理を行う必要性がある.そこで,今回,パッケージ内部に内蔵可能である小型の内部高調波処理用回路(IHN:Internal Harmonic treatment Network)の試作及び評価を行った.まず,集中定数受動素子で構成される高調波処理回路をGaAs MMICプロセスを利用して設計・試作し,基本波2GHz帯での四次高調波まで処理したF級,逆F級高調波処理回路の特性を確認した.次に,逆F級について,このIHNをGaN HEMT素子に適用し,基本波ロードプルを行った場合の特性をシミュレーション及び実験で確認し,シミュレーションにおいてPAE70%以上の高効率動作を確認した.一方で,実測では抵抗損失等による効率低下が確認された.そこで,IHNの損失に関する解析を行い,効率への影響を詳細に調べた.
Scientific journal, Japanese

Parasitic Compensation Design Technique for a C-Band GaN HEMT Class-F Amplifier
Kenta Kuroda; Ryo Ishikawa; Kazuhiko Honjo
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 58, 11, 2741-2750, Nov. 2010, Peer-reviwed, A class-F/inverse class-F load circuit design method that includes parasitic elements such as drain-source capacitance and bonding wire inductance has been developed. For the class-F load circuit design, a reactance function which has zeros at even harmonic frequencies and poles at odd harmonic frequencies is expanded to an LC-ladder circuit including parasitic elements through the use of the second Cauer canonical form. For the inverse class-F load circuit design, the zero points and the poles are exchanged. One stage of the LC-ladder circuit can be approximately replaced to a distributed circuit element for higher frequency operation. The proposed method allows parasitic compensation up to an arbitrary harmonic order by adding zeros and poles. Additionally, if distributed circuit elements are used, the method also compensates frequency dispersive characteristics of microstrip lines.
According to the proposed method, a class-F amplifier using an AlGaN-GaN HEMT has been fabricated at 5.8 GHz. The fabricated class-F amplifier delivered high efficiency characteristics, with a maximum drain efficiency of 79.9%, a maximum power-added efficiency (PAE) of 71.4%, and an output power of up to 33.4 dBm at 5.86 GHz.
Scientific journal, English

Low Noise Group Delay Equalization Technique for UWB InGaP/GaAs HBT LNA
Kyoung-Pyo Ahn; Ryo Ishikawa; Kazuhiko Honjo
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 20, 7, 405-407, Jul. 2010, Peer-reviwed, This letter describes an ultra-wideband (UWB) LNA designed with the aim of achieving both flat group delay variation and a low noise characteristic. Negative group delay (NGD) circuits are good candidates for compensating the group delay variation; however, they have inherent resistances that deteriorate the noise figure (NF). Therefore, an NGD circuit is applied to the latter part of a prototype amplifier. Similarly, a noise matching circuit is applied to the group-delay-equalized amplifier with consideration for its effect on the group delay variation. The LNA with an NGD circuit and a noise matching circuit is fabricated on an InGaP/GaAs MMIC substrate. The fabricated LNA achieved a group delay variation of 11.2 ps, a NF of 1.95-3.54 dB, a maximum gain of 12.3 dB, and a gain variation of 1.1 dB in the UWB band (3.1-10.6 GHz).
Scientific journal, English

Distortion Compensation for Thermal Memory Effect on InGaP/GaAs HBT Amplifier by Inserting RC-Ladder Circuit in Base Bias Circuit
Ryo Ishikawa; Junichi Kimura; Yukio Takahashi; Kazuhiko Honjo
IEICE TRANSACTIONS ON ELECTRONICS, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E93C, 7, 958-965, Jul. 2010, Peer-reviwed, An inter-modulation distortion (IMD) compensation method for thermal memory effect using a multistage RC-ladder circuit has been proposed. The IMD caused by the thermal memory effect on an InGaP/GaAs HBT amplifier was compensated for by inserting a multistage RC-ladder circuit in the base bias circuit of the amplifier. Since heat flux owing to self-heating in the transistor can be approximated with a multistage thermal RC-ladder circuit, the canceling of IMD by an additional electrical memory effect generated from the RC-ladder circuit is predicted. The memory effects cause asymmetrical characteristics between upper and lower IMD. The IMD caused by the memory effects is expressed as a vector sum of each origin. By adjusting an electrical reactance characteristic for sub-harmonics affected by the thermal memory effect in the amplifier circuit, the asymmetric characteristic is symmetrized. The parameters of the RC-ladder circuit were estimated so that the adjusted electrical reactance characteristic is reproduced in simulation. A fabricated InGaP/GaAs HBT amplifier with the thermal memory effect compensation circuit exhibited a symmetrized and suppressed IMD characteristics.
Scientific journal, English

Analysis of Millimeter-Wave Amplifier Module with Surface Wave Mode Transmission Line by FDTD Electromagnetic-Semiconductor Device Co-Simulation
Ryo Ishikawa; Kazuhiko Honjo; Masayuki Nakajima
ELECTRONICS AND COMMUNICATIONS IN JAPAN, SCRIPTA TECHNICA-JOHN WILEY & SONS, 93, 3, 8-15, Mar. 2010, Peer-reviwed, Direct analysis of a millimeter-wave amplifier module by using FDTD electromagnetic and semiconductor device co-simulation technique is demonstrated. The millimeter-wave amplifier module consists of an HFET and planar dielectric transmission lines (PDTL) for the 60-GHz region. A PDTL with a surface wave transmission mode has a low-loss transmission characteristic in the millimeter-wave region when a low-loss ceramic substrate is used. However, the transmission wave of the PDTL tends to be scattered by irregular structures and impedance mismatching. Furthermore, it is predicted that scattered waves reflected at the edges of the substrate will interfere with incident and transmission waves on the PDTL. Using the co-simulation technique, the influence of the scattering waves is investigated in detail for the amplifier module. (C) 2010 Wiley Periodicals, Inc. Electron Comm Jpn, 93(3): 8-15, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecj.10211
Scientific journal, English

Impulse UWB T/R MMIC Modules for Baseband Digital Signals
Ryo Ishikawa; Kazuhiko Honjo
40TH EUROPEAN MICROWAVE CONFERENCE, IEEE, 1066-1069, 2010, Peer-reviwed, Impulse UWB transmitter/receiver (T/R) MMIC modules have been developed using InGaP/GaAs HBT MMIC technology. The modules consist of an impulse generator, an impulse detector, amplifiers, and self-complementary antennas, all in a differential mode. In these modules, UWB impulse signals with a frequency spectrum of more than 9GHz are directly generated from input baseband digital signals using the impulse generator. The pulse width of the impulse signal passing through the antennas is enlarged by the impulse detector so that commercially available analogue and digital ICs can be used. Using the modules, a 100 Mbps digital signal transfer has been successfully evaluated.
International conference proceedings, English

Distortion Reduction of a GaN HEMT Doherty Power Amplifier with a Series Connected Load
Satoshi Kawai; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
2010 ASIA-PACIFIC MICROWAVE CONFERENCE, IEEE, 658-661, 2010, Peer-reviwed, Doherty introduced two types of concepts for high-efficiency linear amplifiers in 1936. One has a shunt connected load and the other has a series connected load. We fabricated a 1.9 GHz GaN HEMT Doherty power amplifier with a series connected load using baluns. The amplifier realized high power efficiency with a wide dynamic range in comparison with a conventional push-pull amplifier. In this paper, we propose distortion reduction method for the amplifier and achieved reduction of the third-order intermodulation distortion (IMD3) more than 15 dB at the output power from 5 to 20 dBm. The amplifier realized power-added efficiency (PAE) of 31 % at the output power of 24 dBm at 10 dB input backoff from the saturated output power of 31 dBm with PAE of 58 %.
International conference proceedings, English

Microwave Circuit Design Techniques Interacting Electro-Magnetic Waves, Semiconductor Devices Structures and Thermal Phenomena
Kazuhiko Honjo; Ryo Ishikawa
2009 Microwve Workshop Digest, WS13-1, 333-338, Nov. 2009, Invited
International conference proceedings, English

Group Delay Equalization Using Multiple Negative Group Delay Circuits
Kyoung-Pyo Ahn; Ryo Ishikawa; Kazuhiko Honjo
Proceedings of Triangle Symposium on Advanced ICT, 119-122, Oct. 2009, Peer-reviwed
International conference proceedings, English

Synthesis for Negative Group Delay Circuits Using Distributed and Second-Order RC Circuit Configurations
Kyoung-Pyo Ahn; Ryo Ishikawa; Akira Saitou; Kazuhiko Honjo
IEICE TRANSACTIONS ON ELECTRONICS, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E92C, 9, 1176-1181, Sep. 2009, Peer-reviwed, This paper describes the characteristic of negative group delay (NGD) circuits for various configurations including first-order, distributed, and second-order RC circuit configurations. This study includes locus, magnitude, and phase characteristics of the NGD circuits. The simplest NGD circuit is available using first-order RC or RL configuration. As an example of distributed circuit configuration, it is verified that losses in a distributed line causes NGD characteristic at higher cut-off band of a coupled four-line bandpass filter. Also, novel wideband NGD circuits using second-order RC configuration, instead of conventional RLC configuration, are proposed. Adding a parallel resistor to a parallel-T filter enables NGD characteristic to it. Also, a Wien-Robinson bridge is modified to have NGD characteristic by controlling the voltage division ratio. They are fabricated on MMIC substrate, and their NGD characteristics are verified with measured results. They have larger insertion loss than multi-stage RLC NGD circuits, however they can realize second-order NGD characteristic without practical implementation of inductors.
Scientific journal, English

Group Delay Equalized UWB InGaP/GaAs HBT MMIC Amplifier Using Negative Group Delay Circuits
Kyoung-Pyo Ahn; Ryo Ishikawa; Kazuhiko Honjo
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 57, 9, 2139-2147, Sep. 2009, Peer-reviwed, A negative group delay (NGD) circuit has been employed to equalize a group delay variation in a broadband ultrawideband (UWB) InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) amplifier. Using the NGD circuit, a part of a salient group delay characteristic in the operation band of broadband amplifiers can be suppressed without an increase of the entire group delay. The MMIC amplifier has a steep group delay increase in the lower frequency region of the full-band UWB band (3.1-10.6 GHz) due to the sum of phase variations near the cutoff frequencies of the HBTs. The NGD circuit has been inserted to reduce this increase of the group delay in the UWB band. By adding a three-cell NGD circuit while considering input and output matching at the input side of the MMIC amplifier, the group delay variation is decreased by 78%. However, gain was also decreased by insertion of the multistage NGD circuit. In an attempt to avoid this decrease in gain, a one-cell NGD circuit was inserted into the feedback loop of the MMIC amplifier, and as a result, we were able to decrease the group delay variation by 79%, with minimal gain deterioration.
Scientific journal, English

Differential Output Impulse Generation InGaP/GaAsHBT MMIC for Impulse UWB System
Ryo Ishikawa; Kazuhiko Honjo
Proc. of 2009 European Microwave Integrated Circuits Conference, EuMIC Poster01-13(266-269), Sep. 2009, Peer-reviwed
International conference proceedings, English

Group delay equalised monolithic microwave integrated circuit amplifier for ultra-wideband based on right/left-handed transmission line design approach
K. Murase; R. Ishikawa; K. Honjo
IET MICROWAVES ANTENNAS & PROPAGATION, INST ENGINEERING TECHNOLOGY-IET, 3, 6, 967-973, Sep. 2009, Peer-reviwed, A group delay equalised InGaP/GaAs HBT monolithic microwave integrated circuit (MMIC) amplifier with an active balun for ultra-wideband (UWB) application has been developed. The MMIC consists of a broadband amplifier with an active balun and a group delay equaliser. The group delay equaliser was designed based on a theory using a composite right/left-handed (CRLH) transmission line. Adding a right-handed (RH) transmission line to a CRLH transmission line in parallel, a convex group delay characteristic is realised. Since various UWB components have concave group delay characteristics, the group delay equaliser can compensate a concave group delay characteristic of the amplifier in an operation frequency band. In this paper, dispersion, group delay and impedance characteristics for the proposed CRLH/RH circuit have been theoretically analysed. Moreover, a minimised group delay equaliser circuit on an MMIC has been designed and fabricated based on the proposed CRLH/RH circuit. A fabricated group delay equalised InGaP/GaAs HBT MMIC amplifier with an active balun exhibited an improved group delay characteristic compared with the MMIC amplifier without the group delay equaliser. The standard deviations of group delays for a frequency variation in a gain band were decreased from 12.8 to 5.5 ps at S-21 and decreased from 10.3 to 7.3 ps at S-31.
Scientific journal, English

A Novel Compensation Technique for Inter-Mudulation Distortion Related to the Thermal Memory Effect
Ryo Ishikawa; Junichi Kimura; Kazuhiko Honjo
Proc. of 2009 Korea-Japan Microwave Conference, 169-172, Apr. 2009, Peer-reviwed
International conference proceedings, English

Doppler frequency up conversion of electromagnetic waves in a slotline on an optically excited silicon substrate
Jongsuck Bae; Yuan Jun Xian; Sho Yamada; Ryo Ishikawa
APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 94, 9, 091120, Mar. 2009, Peer-reviwed, The Doppler frequency up conversion of microwaves in a slotline on an optically excited silicon substrate was experimentally observed. An array of 24 optical fibers with different lengths was used to effectively tilt the wave front of a 532 nm neodymium-doped yttrium aluminum garnet laser beam with a pulse duration of 33 ps. The tilted laser beam produced electron-hole surface plasma whose boundary moved at a relativistic velocity of about c/3.4 (c is the speed of light) along the slotline. The experiments showed that microwaves reflected at the moving boundary of the plasma in the slotline are converted to millimeter waves with a frequency up conversion ratio of 3.82.
Scientific journal, English

Impulse Generator InGaP/GaAs HBT MMIC with Differential Output Port for Impulse UWB System
Ryo Ishikawa; Kazuhiko Honjo
2009 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2009), IEEE, 266-269, 2009, Peer-reviwed, An impulse generator InGaP/GaAs HBT MMIC with a differential output port has been developed for an impulse Ultra-Wideband (UWB) system. The MMIC directly provides impulse signals to UWB antennas in a differential mode through input digital signals. The impulse generated by the fabricated MMIC had a spectrum peak at 3.5 GHz. By changing the waveform of the input digital signal from a square wave to a short pulse with a width of 3 ns, the spectrum was expanded to a high frequency region by a second peak which appeared at 8.5 GHz. In addition, the detection circuit for the impulse signal was examined based on a peak hold circuit.
International conference proceedings, English

HBTの群遅延解析と負の群遅延回路を用いたその補償
安炅彪; 石川亮; 島田雅夫; 本城和彦
電子情報通信学会B論文誌, The Institute of Electronics, Information and Communication Engineers, J92-B, 1, 11-19, Jan. 2009, Peer-reviwed, 本論文では,UWBなど超広帯域無線システムに用いるモジュールの性能評価尺度として重要な群遅延特性の均一化を図るために,小信号等価回路を用いたヘテロ接合バイポーラトランジスタ(HBT)の群遅延解析を行い,新たに提案する抵抗を用いた負の群遅延(NGD : Negative Group Delay)回路を用いて,これを補償する方法を提案している.ダブルエミッタ,トリプルベース構造など種々の電極配置構造を有するHBTに対する群遅延解析の結果,群遅延特性と電流駆動能力には密接な関係があることが分かった.また,解析,シミュレーション,及び測定結果により,群遅延偏差は周波数が上がるほど減少する傾向を示す特徴があることが確認された.この特徴に着目すると,UWBの全帯域(3.1〜10.6GHz)での偏差の大部分を減少できる可能性がある.この目的に適した方法の一つは,抵抗とキャパシタの直列回路にインダクタを並列に接続したNGD回路を用いた補償である.この回路は既存のNGDより損失が増すが,広帯域で反射損が改善できる新たなNGD補償回路である.このNGD補償回路をHBTの入力側に,そして直列共振形のNGD補償回路を出力側に付加した場合,UWBの全帯域(3.1〜10.6GHz)内において,6.4dBの利得犠牲の下に,83%の群遅延抑制効果が確認された.なお,このNGD回路は,群遅延補償に加え,反射損の改善にも効果がある.
Scientific journal, Japanese

A Predistortion Linearizer for a Class-F GaN HEMT Power Amplifier Using Two Independently Controlled Diodes
Akihiro Ando; Yoichiro Takayama; Tsuyoshi Yoshida; Ryo Ishikawa; Kazuhiko Honjo
APMC: 2009 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5, IEEE, 269-272, 2009, Peer-reviwed, A novel pre-distortion technique using two independently bias-controlled Schottky diodes is proposed to compensate the complicated nonlinear characteristics of the AlGaN/GaN HEMT microwave class-F amplifier, in which inferior intermodulation distortions are often observed for an output power range of large back-off. The newly developed technique has made it possible to achieve both high drain efficiency and low intermodulation distortion simultaneously. The developed linearizer was fabricated in MMIC form and applied to a one watt AlGaN/GaN HEMT class-F amplifier operating at 1.9 GHz, where harmonic frequencies up to the fifth higher order were controlled. With the diode predistortion linearizer, the third-order intermodulation distortion ratio (IMD3) of the 1.9-GHz class-F GaN HEMT power amplifier was improved over power output from 0 to 18 dBm. The IMD3 was under -40 dBc at output powers lower than 10 dBm. The amplifier had a maximum drain efficiency of 70.6 % at output power of 27 dBm.
International conference proceedings, English

A GaN HEMT Doherty Amplifier with a Series Connected Load
Satoshi Kawai; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
APMC: 2009 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5, IEEE, 325-328, 2009, Peer-reviwed, Doherty introduced two types of concepts for high-efficiency amplifiers in 1936. One involved a shunt connected load and the other involved a series connected load. The first one is well known. We propose a microwave Doherty power amplifier with a series connected load using baluns. A 1.9 GHz GaN HEMT Doherty power amplifier was designed and fabricated. At 24 dBm middle and 31 dBm saturated output powers, the amplifier realized improved power efficiencies of 31% and 56%, respectively, compared to power efficiencies of 15% at 24 dBm output power and 57% at 34 dBm saturated power, respectively, obtained with a reference push-pull amplifier.
International conference proceedings, English

Inverse Class-F AlGaN/GaN HEMT Microwave Amplifier Based on Lumped Element Circuit Synthesis Method
Yasuyuki Abe; Ryo Ishikawa; Kazuhiko Honjo
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 56, 12, 2748-2753, Dec. 2008, Peer-reviwed, A lumped element design method considering more than third-order higher harmonic frequencies for a microwave AlGaN/GaN HEMT inverse class-F amplifier has been developed. The load circuit consists of a series reactance network having zero impedance at the odd order harmonic frequencies and poles at the even order higher harmonic frequencies as well as a shunt reactance network having zero impedance at the odd order harmonic frequencies. A fabricated AlGaN/GaN HEMT inverse class-F amplifier delivered a power-added efficiency of 76.3% and a drain efficiency of 78.3% at 879 MHz.
Scientific journal, English

InGaP/GaAs HBT MMIC Amplifier with Low Power Consumption and Low Noise Characteristics for Full-Band UWB Receiver Systems
Ryo Ishikawat; Takuya Abe; Kazuhiko Honjo; Masao Shimada
IEICE TRANSACTIONS ON ELECTRONICS, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E91C, 11, 1828-1831, Nov. 2008, Peer-reviwed, A wideband InGaP/GaAs HBT MMIC amplifier with a low noise characteristic has been developed as a full-band UWB receiver. The amplifier was designed by applying a scaling law to a driver amplifier in order to decrease power consumption, including a modification for decreasing a noise figure. A triple base structure for a double-emitter HBT was employed to decrease a base resistance and to decrease a noise figure of the amplifier. A fabricated amplifier provided a 3-dB gain roll-off bandwidth from 1.1 GHz to 10.6 GHz with a 14.1 dB peak power gain. The amplifier exhibited a low power consumption of 15.9 mW and a low noise figure of less than 3.7 dB in the full-band of the UWB.
Scientific journal, English

A Global Design Technique Including the Interactions between Electromagnetic Waves and Semiconductor Devices in Advanced Microwave Circuits (Invited Paper)
Kazuhiko Honjo; Ryo Ishikawa
Proceedings of the 3rd International Laser, Light-Wave and Microwave Conference (ILLMC2008), 24-IT-5, Apr. 2008, Peer-reviwed, Invited
International conference proceedings, English

Direct analysis technique for long-finger HBT by electromagnetic and device co-simulation
Yasuta Shinohara; Ryo Ishikawa; Kazuhiko Honjo
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 56, 4, 747-754, Apr. 2008, Peer-reviwed, This paper presents a direct-analysis technique for transistors with a long-finger structure. The analysis technique is an incorporated simulation between the finite-difference time-domain electromagnetic (EM) and semiconductor device simulations. The co-simulation method can consider various EM couplings and phase shifts on finger electrodes of transistors. The method was applied for InGaP/GaAs HBTs with various finger lengths to investigate gain degradation characteristics as a function of the finger length. As the first step, circuit simulations were done instead of a semiconductor device simulation using SPICE models of the HBT. Both large- and small-signal equivalent-circuit parameters were extracted by measurements to estimate nonlinear and linear characteristics, respectively. Using the extracted small-signal parameters, the gain degradation was estimated. The co-simulation results showed the same tendency as measurement results. Additionally, it was numerically shown that a resistive loss was mainly affected for the gain degradation from a comparison between gold and lossless electrodes.
Scientific journal, English

Analysis of millimeterwave amplifier module with surface wave mode transmission line by FDTD electromagnetic-semiconductor device co-simulation
Ryo Ishikawa; Kazuhiko Honjo; Masayuki Nakajima
IEEJ Transactions on Electronics, Information and Systems, Institute of Electrical Engineers of Japan, 128, 6, 5-871, 2008, Peer-reviwed, Direct analysis for a millimeterwave amplifier module has been demonstrated by using FDTD electromagnetic and semiconductor device co-simulation technique. The millimeterwave amplifier module consists of an HFET and planar dielectric transmission lines (PDTL) at 60-GHz region. The PDTL with a surface wave transmission mode has a low-loss transmission characteristic at millimeterwave region using a low-loss ceramic substrate. However, the transmission wave on the PDTL tends to be scattered by irregular structures and impedance mismatching. Furthermore, it is predicted that reflected scattered waves at edges of the substrate interfere with incident and transmission waves on the PDTL. Using the co-simulation technique influence of the scattering waves was investigated in detail for the amplifier module. © 2008 The Institute of Electrical Engineers of Japan.
Scientific journal, English

High-Efficiency GaN-HEMT Class-F Amplifier Operating at 5.7 GHz
Kenta Kuroda; Ryo Ishikawa; Kazuhiko Honjo
2008 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, IEEE, 445-448, 2008, Peer-reviwed, We report on the design, fabrication, and measurement results of a high-efficiency class-F amplifier using an AlGaN/GaN HEMT at 5.7 GHz. Because of their higher operating voltage, GaN devices are expected to have higher operating efficiency as compared to GaAs devices. The fabricated amplifier using a low-loss resin microstrip substrate validated high efficiency expectations with a maximum drain efficiency of 77.1%, maximum power added efficiency of 68.7%, and output power of up to 34.5 dBm at 5.69 GHz.
International conference proceedings, English

A High-Efficiency Class-F GaN HEMT Power Amplifier with a Diode Predistortion Linearizer
Akhiro Ando; Yoichiro Takayama; Tsuyoshi Yoshida; Ryo Ishikawa; Kazuhiko Honjo
APMC: 2008 ASIA PACIFIC MICROWAVE CONFERENCE (APMC 2008), VOLS 1-5, IEEE, 815-818, 2008, Peer-reviwed
International conference proceedings, English

Class-F Microwave Amplifier Desig Using GaAs-HBT and GaN-HEMT (Invited)
Kazuhiko Honjo; Ryo Ishikawa; Tsuyoshi Yoshida; Cong Zheng
International Conference on Solid State Devices and Materials, 298-299, Sep. 2007, Peer-reviwed, Invited
International conference proceedings, English

Accurate distortion prediction for thermal memory effect in power amplifier using multi-stage thermal RC-Ladder network
Yukio Takahashi; Ryo Ishikawa; Kazuhiko Honjo
IEICE TRANSACTIONS ON ELECTRONICS, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E90C, 9, 1658-1663, Sep. 2007, Peer-reviwed, Distortion characteristics caused by the thermal memory effect in power amplifiers were accurately predicted using a multi-stage thermal RC-ladder network derived by simplifying the heat diffusion equation. Assuming a steep gradient of heat diffusion near an intrinsic transistor region in a semiconductor substrate, the steady state temperature, as well as the transient thermal response at the transistor region, was estimated. The thermal resistances and thermal capacitances were adjusted to fit a temperature distribution characteristic and a step response characteristic of temperature in the substrate. These thermal characteristics were calculated by thermal FDTD simulation. For an InGaP/GaAs HBT, a step response characteristic for a square-wave voltage signal input was simulated using a large-signal model of the HBT connecting the multi-stage thermal RC-ladder network. The result was verified experimentally. Additionally, for an RF-amplifier using the HBT, the 3rd-order intermodulation distortion caused by the thermal memory effect was simulated and this result was also verified experimentally. From these verifications, a multi-stage thermal RC-ladder network can be used to accurately design super linear microwave power amplifiers and linearizers.
Scientific journal, English

Low Power Consumption and Low Noise InGaP/GaAs HBT MMIC Amplifier for Full-Band UWB Receiver
Ryo Ishikawa; Takuya Abe; Masao Shimada; Kazuhiko Honjo
Proc. of 2007 International Conference on Solid State Devices and Materials(SSDM2007), G-3-3(302-303)-299, Sep. 2007, Peer-reviwed
International conference proceedings, English

Finger Length Optimization for AlGaN/GaN HEMT and InGaP/GaAs HBT by Using FDTD Electromagnetic and Device Co-Simulation Technique
Akira Chokki; Yasuta Shinohara; Ryo Ishikawa; Kazuhiko Honjo
Proc. of 2007 International Conference on Solid State Devices and Materials(SSDM2007), 2007, G-1-5(154-155)-155, Sep. 2007, Peer-reviwed
International conference proceedings, English

An expression of high-frequency characteristics on a high-density multilayer wiring board using an LC ladder network as a unit segment
Ryo Ishikawa; Norio Imai; Kazuhiko Honjo
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, SCRIPTA TECHNICA-JOHN WILEY & SONS, 90, 4, 18-25, 2007, Peer-reviwed, This paper presents a method of expressing a high-speed signal transmission line connecting the LSIs in a high-density multilayer wiring board in terms of cascaded connections of LC ladder networks. For signal transmission with a fundamental frequency beyond 1 GHz, the signal transmission lines in a multilayer board are treated as distributed transmission lines. However, there exist many scattering elements such as vias for interlayer connection in the multilayer board that disturb the transmission characteristic. Transmission characteristics affected by these elements are analyzed by electromagnetic field simulation in general. However, the simulation requires a lot of simulation time and computer resources. In order to simplify the simulation, the signal line structures in the board are constructed with combinations of several segments. Moreover, each unit segment is expressed in terms of an LC ladder network so that an analysis based on the lumped elements can be carried out within a short time. This paper describes a technique for deriving the L and C values of the ladder equivalent circuits for various unit segments such as passive components and transmission lines. By comparison with the electromagnetic field analysis and measurement, the usefulness of the method is demonstrated. (C) 2007 Wiley Periodicals, Inc.
Scientific journal, English

Global analysis for a surface wave mode BFET amplifier module at 60 GHz by EM-device co-simulation
Ryo Ishikawa; Kazuhiko Honjo; Masayuki Nakajima
2007 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, VOLS 1 AND 2, IEEE, 559-+, 2007, Peer-reviwed, A global analysis for a millimeter-wave amplifier module with surface wave mode transmission lines has been demonstrated. The analysis method is a co-simulation between an FDTD-based electromagnetic simulator and a semiconductor device simulator. Using this method, it is possible to consider various electromagnetic coupling between transmission lines and active devices with nonlinear characteristics. Furthermore, a semiconductor device simulation is more accurate than an approximation to a large-signal equivalent circuit. The incorporated simulation was demonstrated for a millimeter-wave amplifier module which consists of an HFET and planar dielectric transmission lines (PDTL) at 60-GHz region. The PDTL with a surface wave transmission mode has a low-loss transmission characteristic at millimeter-wave region using a low-loss ceramic substrate. However, the transmission wave on the PDTL tends to be scattered by discontinuity structures and impedance mismatching. Furthermore, it is predicted that reflected scattered waves at edges of the substrate interfere the PDTL and transistors mounted on the PDTL. Using the co-simulation technique, influence of the scattering waves was investigated in detail for the amplifier module.
International conference proceedings, English

InGaP/GaAs HBT MMIC amplifier with active balun for ultra-wideband self-complementary antenna
Itaru Nakagawa; Ryo Ishikawa; Kazuhiko Honjo; Masao Shimada
IEICE TRANSACTIONS ON ELECTRONICS, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E89C, 12, 1814-1820, Dec. 2006, Peer-reviwed, An InGaP/GaAs HBT MMIC amplifier with an active balun has been developed for ultra-wideband radio systems (UWB). The MMIC was designed to drive a self-complementary antenna with a balanced mode, where an input impedance is 60 pi ohms. The MMIC consists of a common mode negative feed back ultra-wideband amplifier circuit, an active balun circuit, and a high impedance drive circuit. The developed amplifier provides a 3-dB gain roll-off bandwidth from 2.4 GHz to 10.8 GHz with a 14.1-dB linear power gain, and a linear power output up to 3 dBm. The developed amplifier with the active balun provides a 3-dB gain roll-off bandwidth from 2.3 GHz to 8.6 GHz with a 21.3-dB power gain in a balanced mode, and a linear power output up to 0.6 dBm. The measured total group delay is less than 32 psec. Output signals at the balanced output terminals of the MMIC were kept inverted with a steep pulse shape for an impulse input signal of 57-psec pulse width.
Scientific journal, English

High-Speed and High-Density Semiconductor Package Modeling Using Optimaized Segment Extraction Method
大島大輔; 井上博文; 古谷充; 境淳; 石川亮; 本城和彦
電子情報通信学会C論文誌, The Institute of Electronics, Information and Communication Engineers, J89-C, 11, 826-832, Nov. 2006, Peer-reviwed, 本論文では電子機器の高周波性能を実現するために,チップ・パッケージ・ボードなどの実装構造中の電気信号経路を統合的に解析し,不連続部を抽出することで,効率的かつ高精度な分割解析モデルを生成する最適要素抽出法(Optimized Segment Extraction Method, OSE法)を提案する.本提案方法ではBGA (Ball Grid Array)実装構造を(i)チップとパッケージの接続部を含む要素,(ii)パッケージ内伝送路を含む要素,(iii)パッケージとボードとの接続部を含む要素に分割することで従来の分割境界の選び方に比べ解析精度が向上できる.また,構造の一部を等価回路に置き換えた場合についても検討した.(iii)を電磁界モデル,伝送路構造である(i),(ii)を次数の小さな等価回路モデルで表現した本提案モデルと,全体を一つの電磁界モデルとしたリファレンスモデルで高周波精度と解析時間を比較し,高周波精度向上と計算機資源節約の両立が実現できることを示す.
Scientific journal, Japanese

An Expression of High-Frequency Characteristics on a High-Density Multi-Layer Wiring Board Using an LC Ladder Network as a Unit-Segment
Ryo Ishikawa; Norio Imai; Kazuhiko Honjo
電子情報通信学会C論文誌, The Institute of Electronics, Information and Communication Engineers, J89-C, 8, 538-544, Aug. 2006, Peer-reviwed, LSI間を接続するための高密度多層配線基板において,高速信号伝送線路をLCはしご形回路の多段接続で表す手法について述べる.1GHz以上の基本周波数をもつ信号伝送では,多層基板内の配線は分布定数線路として扱われる.しかし,基板内には層間配線用ビア等,線路特性に影響を及ぼす要素が多々存在する.一般にこれらの伝送特性を解析するためには,電磁界解析により伝搬特性を評価する必要がある.そこでまず基板内の配線構造をいくつかの基本セグメントの組合せで構成し,更にその基本セグメントをLCはしご形回路で表すことで集中定数回路による短時間での解析が可能となる.ここでは受動素子や線路等の種々の基本セグメント構造に対するはしご形等価回路のL値とC値の導出手法について述べ,更に電磁界解析や測定との比較によりその有用性を示す.
Scientific journal, Japanese

Microwave class-F InGaP/GaAs HBT power amplifier considering up to 7th-order higher harmonic frequencies
Masato Seki; Ryo Ishikawa; Kazuhiko Honjo
IEICE TRANSACTIONS ON ELECTRONICS, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E89C, 7, 937-942, Jul. 2006, Peer-reviwed, The first realization of a class-F InGaP/GaAs HBT amplifier considering up to 7th-order higher harmonic frequencies, operating at 1.9-GHz band, is described. A total number of open-circuited stubs for higher harmonic frequency treatment is successfully reduced without changing a class-F load circuit condition, using a low-cost and low-loss resin (tan delta = 0.0023) circuit board. In class-F amplifier design at microwave frequency ranges, not only increasing treated orders of higher harmonic frequencies for a class-F load circuit, but also decreasing parasitic capacitances of a transistor is important. Influence of a base-collector capacitance, C-bc, for power added efficiency, PAE, and collector efficiency, eta(c), was investigated by using a two-dimensional device simulator and a harmonic balance simulator. Measured maximum PAE and eta(c) reached 74.2% and 76.6%, respectively, using a fabricated class-F InGaP/GaAs HBT amplifier with collector doping density of 2 x 10(16) cm(-3). In case circuit losses were de-embedded for the experimental results, PAE and eta(c) were estimated as 78.7% and 81.2%, respectively. These are very close to obtainable maximum PAE for the use of the InGaP/GaAs HBT.
Scientific journal, English

Group delay compensation technique for UWB MMIC using composite right/left-handed circuit
Kenji Murase; Ryo Ishikawa; Kazuhiko Honjo
Asia-Pacific Microwave Conference Proceedings, APMC, Institute of Electrical and Electronics Engineers Inc., 3, 1409-1412, 2006, Peer-reviwed, A group delay equalizer consisting of a composite right/left handed (CRLH) circuit in parallel with a right handed (RH) circuit is proposed for UWB RF components. Dispersion characteristics and group delay characteristics for the proposed circuit are described. A group delay compensation circuit was designed for the developed InGaP/GaAs HBT MMIC amplifier with an active balun. It is demonstrated that the measured standard deviations of group delay can be reduced from 16.5 psec in S21 and 12.4 psec in S31 to 4.4 psec in S21 and 7.7 psec in S31, respectively, in a circuit simulation. Copyright 2006 IEICE.
International conference proceedings, English

Precise modeling of thermal memory effect for power amplifier using multi-stage thermal RC-ladder network
Yukio Takahashi; Ryo Ishikawa; Kazuhiko Honjo
Asia-Pacific Microwave Conference Proceedings, APMC, 1, 287-290, 2006, Peer-reviwed, A precise modeling method for thermal memory effect has been proposed. The proposed method consists of a multi-stage thermal RC-ladder network, which has been replaced from heat diffusion equation. Different from conventional method, the proposed method is valid for both steady state solutions and transient solutions. As examples, output voltage transient phenomena and 3rd order inter modulation distortion characteristics for InGaP/GaAs HBT amplifiers were simulated and measured. Experimental results support the validity of the proposed method. The model can be used for accurate design for supper linear microwave power amplifiers and linearizers. Copyright 2006 IEICE.
International conference proceedings, English

Long-finger HBT analysis based on device and EM co-simulation using FDTD method
Yasuta Shinohara; Ryo Ishikawa; Kazuhiko Honjo
Asia-Pacific Microwave Conference Proceedings, APMC, 1, 291-294, 2006, Peer-reviwed, This paper presents an integrated analysis of a FDTD electromagnetic field simulation and a device simulation applying for HBT's having long-finger structure. The SPICE model extracting device parameter was used instead of physical model. As a result, the FDTD simulation results were the same tendency to measurement results. Additionally the comparison of gold line with lossless line as finger was shown. Copyright 2006 IEICE.
International conference proceedings, English

Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering up to 7th-order Higher Harmonic Frequencies
Masato Seki; Ryo Ishikawa; Kazuhiko Honjo
Proc. of 6th Topical Workshop on Heterostructure Microelectronics, TuA-4(12-13), Aug. 2005, Peer-reviwed
International conference proceedings, English

Interaction between nonrelativistic electrons and optical evanescent waves
J Bae; R Ishikawa; K Mizuno
NANOELECTRODYNAMICS: ELECTRONS AND ELECTROMAGNETIC FIELDS IN NANOMETER-SCALE STRUCTURE, SPRINGER-VERLAG BERLIN, 121-142, 2003, Peer-reviwed
International conference proceedings, English

Experimental verification of the theory on energy modulation of an electron beam with an optical near-field
R Ishikawa; J Bae; K Mizuno
IEICE TRANSACTIONS ON ELECTRONICS, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, E85C, 12, 2086-2092, Dec. 2002, Peer-reviwed, An exchange of energy between nonrelativistic electrons and evanescent waves in an optical near-filed has been investigated in an infrared region. A metal microslit has been adopted as an optical near-field generator which produces a number of evanescent waves by illumination of a laser beam. The theory has predicted that electrons interact selectively with the evanescent wave whose phase velocity is equal to the velocity of the electrons. In order to verify the theory, two types of precise microslits with different shapes, a slot and a V-shaped groove, have been fabricated. Experiments performed using these slits at the wavelength of 10.6 mum have shown that the energy change of the electrons has varied from 2 eV to 13 eV with their initial energy between 25-95 keV for a 3.2 kW CO2 laser pulse. The measured results have given experimental verifications to the theory.
Scientific journal, English

Interaction between low-energy electrons and optical evanescent waves
J. Bae; R. Ishikawa; K. Mizuno
Proc. of Progress In Electromagnetics Research Symposium(PIERS 2001), 655, Jul. 2001, Peer-reviwed
International conference proceedings, English

Energy modulation of nonrelativistic electrons in an optical near field on a metal microslit
R Ishikawa; J Bae; K Mizuno
JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 89, 7, 4065-4069, Apr. 2001, Peer-reviwed, Energy modulation of nonrelativistic electrons with a laser beam using a metal microslit as an interaction circuit has been investigated. An optical near field is induced in the proximity of the microslit by illumination of the laser beam. The electrons passing close to the slit are accelerated or decelerated by an evanescent wave contained in the near field whose phase velocity is equal to the velocity of the electrons. The electron-evanescent wave interaction in the microslit has been analyzed theoretically and experimentally. The theory has predicted that electron energy can be modulated at optical frequencies. Experiments performed in the infrared region have verified theoretical predictions. The electron-energy changes of more than +/-5 eV with a 10 kW CO2 laser pulse at the wavelength of 10.6 mum has been successfully observed for an electron beam with an energy of less than 80 keV. (C) 2001 American Institute of Physics.
Scientific journal, English

Energy modulation of nonrelativistic electrons with a CO2 laser using a metal microslit
J Bae; R Ishikawa; S Okuyama; T Miyajima; T Akizuki; T Okamoto; K Mizuno
APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 76, 16, 2292-2294, Apr. 2000, Peer-reviwed, A metal microslit has been used as an interaction circuit between a CO2 laser beam and nonrelativistic free electrons. Evanescent waves which are induced on the slit by illumination of the laser light modulate the energy of electrons passing close to the surface of the slit. The electron-energy change of more than +/- 5 eV for the 80 keV electron beam has been observed using the 7 kW laser beam at the wavelength of 10.6 mu m. (C) 2000 American Institute of Physics. [S0003-6951(00)03516-6].
Scientific journal, English

Energy modulation of Nonrelativistic Electrons with Infrared Evanescent Waves
J Bae; R Ishikawa; K Mizuno
2000 25TH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES CONFERENCE DIGEST, IEEE, 31-32, 2000, Optical evanescent waves which are induced on a metal microslit by illumination of a light have been utilized to modulate a low-energy electron beam at optical frequencies. Experiments performed at the wavelength of 10.6 mum have shown that energy of electron's can be changed more than 10 eV for an electron beam with an initial energy of 80 keV by using a CO2 laser beam with a peak power of 7 kW.
International conference proceedings, English

Electron energy modulation with near-fields
R. Ishikawa; J. Bae; K. Mizuno
Proc. of 5th International Conference on Near Field Optics and Related Techniques, 173-174, Dec. 1998, Peer-reviwed
International conference proceedings, English

無線通信に用いられる送信用電力増幅器
石川亮
Lead, Feb. 2024, 電子情報通信学会誌, 107, 2, Introduction scientific journal, 0913-5693, 202402277110635314

高速・大容量無線通信時代を支えるハードウェア技術
石川亮
一般財団法人電波技術協会, 10 Jul. 2021, 電波技術協会会報, 341, 18-21, Japanese, Introduction other, 0910-593X, 202102224413705567

近接場光による電子ビームの変調とその検出
ベイジョンソク; 石川亮
Mar. 2004, OplusE, 26, 4, 412-417, Japanese, Introduction other

Handbook of Nano-Optics and Nanophotonics
J. Bae; R. Ishikawa; K. Mizuno
English, Joint work, 24. Momentum Modulation of Electrons in Optical Near-Fields, Springer Berlin Heidelberg, May 2013

Nanoelectrodynamics
J. Bae; R. Ishikawa; K. Mizuno
English, Joint work, Interaction between nonrelativistic electrons and optical evanescent waves, NanoScience and Technology. Springer-Verlag, Jan. 2003

Progress in Nano-Electro-Optics I
J. Bae; R. Ishikawa; K. Mizuno
English, Joint work, Modulation of an electron beam in optical near-fields, Springer series Optical Sciences. Springer-Verlag, Jan. 2003

小型合成回路を用いた4.7GHz帯GaN HEMT増幅器のドハティ・アウトフェージング複合動作による出力バックオフ効率改善
白石悠大; 本城和彦; 石川 亮
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会
14 Nov. 2024
14 Nov. 2024- 15 Nov. 2024

OAM多重通信ビームステアリングのモード間反射角度均一化による伝送特性改善に関する一検討
北山観行; 斉藤 昭; 本城和彦; 石川 亮
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会
14 Nov. 2024
14 Nov. 2024- 15 Nov. 2024

Introduction of the Study Results of the Moon Electrical Power Systems
Koichi Ijichi; Noriaki Oka; Kenji Yamauchi; Hiroki Yanagawa; Osamu Kashimura; Atsushi Uchuda; Koji Tanaka; Tomohiko Mitani; Kazuhiko Honjo; Ryo Ishikawa; Kosei Ishimura; Yoshiyuki Fujino; Kazuhisa Fujita; Kenji ITO; Yoshihiro Kawakami; Yoji Ishikawa; Hiroshi Yamaguchi; Akihiko Ogawa
Oral presentation, English, 75th International Astronautical Congress
16 Oct. 2024
14 Oct. 2024- 18 Oct. 2024

Development of Mission System for Wireless Power Transmission Experiments in Orbit
Koji Tanaka; Yoshiyuki Fujino; Tomohiko Mitani; Ryo Ishikawa; Kazuhiko Honjo; Yasuyuki Miyazaki; Kosei Ishimura; Takumi Abe; Atsushi Kumamoto; Hirotsugu Kojima; Satoshi Kurita; Kenji Ito; Takahisa Tomoda; Kazuyuki Nakamura; Koji Yamaguchi; Hitomi Inada; Koichi Ijichi; Kouki Yanagi
Oral presentation, English, 75th International Astronautical Congress
14 Oct. 2024
14 Oct. 2024- 18 Oct. 2024

40 GHz帯ループアンテナアレイの給電点方位最適化によるOAM多重通信性能の改善
川瀬 正陽; 斉藤 昭; 本城 和彦; 石川 亮
Oral presentation, Japanese, 2024年電子情報通信学会ソサイエティ大会
13 Sep. 2024
10 Sep. 2024- 13 Sep. 2024

小型合成器による4.7GHz帯ドハティ・アウトフェージング増幅器
白石 悠大; 本城 和彦; 石川 亮
Oral presentation, Japanese, 2024年電子情報通信学会ソサイエティ大会
11 Sep. 2024
10 Sep. 2024- 13 Sep. 2024

SSPS送電部DC-RF変換用高効率・高利得マイクロ波増幅器の小型化に関する検討
石川 亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会 無線電力伝送研究会
13 Jun. 2024
13 Jun. 2024- 13 Jun. 2024

月面電力供給システムの検討
内田敦; 岡範全; 山内健司; 伊地智幸一; 田中孝治; 三谷友彦; 石村康生; 本城和彦; 石川亮; 藤野義之; 藤田和久; 伊東健治; 川上好弘; 石川洋二; 山口洋司; 小川誠仁
Oral presentation, Japanese, 第７回月測位研究会
28 May 2024
28 May 2024- 28 May 2024

The introduction of current development status of SSPS and OHISAMA project
Koichi Ijichi; Hiroki Yanagawa; Hidetoshi Kitabatake; Kouki Yanagi; Hitomi Inada; Osamu Kashimura; Koji Tanaka; Ryo Ishikawa; Kazuhiko Honjo; Kosei Ishimura; Akihito Ogawa
Oral presentation, English, International Conference on Energy from Space 2024
17 Apr. 2024

挿入損失を考慮した2電力レベル設計による28 GHz帯GaN HEMTアウトフェージング増幅器MMICの試作
小林大輝; 本城和彦; 石川亮
Oral presentation, 電子情報通信学会マイクロ波研究会
01 Mar. 2024

ドレインバイアス調整による分布型増幅器の効率性能改善に関する一検討
岩崎健斗; 本城和彦; 石川亮
Oral presentation, 電子情報通信学会マイクロ波研究会
29 Feb. 2024

超長距離無線送電のための宇宙実験に関するミッション検討
稲田仁美; 伊地智幸一; 北畠秀俊; 柳幸喜; 鹿志村修; 藤野義之; 三谷友彦; 小嶋浩嗣; 栗田怜; 石川亮; 石村康生; 熊本篤志; 宮崎康行; 阿部琢美; 田中孝治
Oral presentation, Japanese, 第9回宇宙太陽発電(SSPS)シンポジウム
22 Dec. 2023

OAMビームフォーミング用スイッチングダイオード装荷28 GHz帯ループアンテナアレイ
吉田 剛; 斉藤 昭; 本城和彦; 石川 亮
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会
22 Dec. 2023

準ミリ波帯動作アウトフェージング増幅器の研究開発
石川 亮
Public discourse, Japanese, Microwave Workshops & Exhibition (MWE 2023)
30 Nov. 2023

ゲートバイアス制御用整流器を用いた広ダイナミックレンジ高効率GaN HEMT整流器システムに関する研究
長田多喜; 山崎 純; 本城和彦; 石川 亮
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会
17 Nov. 2023

パラボロイドとループアンテナアレイを用いたビームステアリングによる一対多OAM多重通信の検討
北山観行; 斉藤 昭; 本城和彦; 石川 亮
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会
16 Nov. 2023

誘電体レンズ中継器を用いたOAM多重通信の通信距離拡張
内田海斗; 斉藤 昭; 本城和彦; 石川 亮
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会
16 Nov. 2023

OAMビームフォーミング用ダイオード装荷28 GHz帯ループアンテナアレイの基礎検討
吉田剛; 石川亮; 本城和彦; 斉藤昭
Oral presentation, Japanese, 2023年電子情報通信学会ソサイエティ大会
15 Sep. 2023

誘電体レンズ中継によるループアンテナアレイ OAM多重通信の通信距離拡張
内田海斗; 斉藤昭; 石原克弥; 本城和彦; 石川亮
Oral presentation, Japanese, 2023年電子情報通信学会ソサイエティ大会
15 Sep. 2023

SSPS送電部 DC-RF変換用高効率・高利得マイクロ波増幅器
石川亮
Invited oral presentation, Japanese, 2023年電子情報通信学会ソサイエティ大会
14 Sep. 2023

ゲートバイアス制御用整流器による高効率 GaN HEMT整流器の広ダイナミックレンジ化
長田多喜; 山崎純; 本城和彦; 石川亮
Oral presentation, Japanese, 2023年電子情報通信学会ソサイエティ大会
14 Sep. 2023

28 GHz帯 GaN HEMTアウトフェージング増幅器 MMICの損失考慮設計
小林大輝; 本城和彦; 石川亮
Oral presentation, Japanese, 2023年電子情報通信学会ソサイエティ大会
12 Sep. 2023

マイクロ波SSPS送電部DC/RF変換用高効率増幅器の開発状況
石川亮; 本城和彦
Oral presentation, 第42回宇宙エネルギーシンポジウム
22 Mar. 2023

高次モードを利用したOAM多重通信用準ミリ波帯ループアンテナアレイ
石原克弥、斉藤昭、本城和彦、石川亮
Oral presentation, Japanese, 2023年電子情報通信学会総合大会
08 Mar. 2023
08 Mar. 2023

遠距離OAM多重通信のビームステアリングの検討
北山観行、斉藤昭、石原克弥、内田海斗、本城和彦、石川亮
Oral presentation, Japanese, 2023年電子情報通信学会総合大会
08 Mar. 2023
08 Mar. 2023

3入力電力レベル最適化設計による3.7 GHz GaN HEMT ドハティ増幅器
山本薫臣・本城和彦・石川亮
Oral presentation, Japanese, 2023年電子情報通信学会総合大会
07 Mar. 2023
07 Mar. 2023

3入力電力レベル最適化設計による3.7 GHz GaN HEMT ドハティ増幅器のバックオフ性能改善に関する研究
山本薫臣、本城和彦、高山洋一郎、石川亮
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会
02 Mar. 2023
02 Mar. 2023

無線電力送電用マイクロ波高効率増幅器の開発状況
石川亮
Public discourse, 令和4年度第2回マイクロ波無線送電技術ビジネス化研究会
20 Feb. 2023

ループアンテナアレイ遠距離OAM多重通信システムにおける凹面反射鏡および給電点方位の最適化
石原克弥、斉藤昭、本城和彦、石川亮
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会
16 Dec. 2022
16 Dec. 2022

マイクロ波WPTにおける送電部高効率DC/RF変換回路技術
石川亮
Public discourse, Japanese, 無線電力伝送研究専門委員会 【 第7回ワークショップ 】無線電力伝送における回路技術の基礎と応用, 電子情報通信学会 無線電力伝送研究専門委員会
08 Dec. 2022

ゼロしきい値 GaAs HEMT を使用したワイヤレス電力伝送用サブmW動作 2.45 GHz 帯高効率整流器の直流電圧合成法
吉田剛; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
16 Nov. 2022

マイクロ波電力増幅器への負ゲートバイアス印加用直流帰還型ゼロ閾値GaAs HEMT整流器および倍電圧ダイオード整流器
長田多喜; 本城和彦; 石川亮
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
16 Nov. 2022

準ミリ波帯50Ω設計電力増幅器を使用したアウトフェージング動作による出力バックオフ性能改善の一検討
芦沢直; 本城和彦; 石川亮
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
15 Nov. 2022

RF Energy Harvesting Technology and New Applications to IoT
石橋孝一郎; 井田次郎; 柳谷隆彦; 平山裕; 牧野滋; 伊東健治; 石川亮; PHAM Cong-Kha; 石橋功至
応用物理学会秋季学術講演会
20 Sep. 2022

50Ω設計増幅器を用いた準ミリ波帯アウトフェージング動作に関する一検討
芦沢直; 本城和彦; 石川亮
Oral presentation, Japanese, 2022年電子情報通信学会ソサイエティ大会, Domestic conference
06 Sep. 2022

小型出力合成回路を用いた4.5 GHz帯GaN HEMTアウトフェージング増幅器MMIC
石川亮; 髙山洋一郎; 本城和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
09 Jun. 2022

A High-Gain and High-Efficiency Amplifier Module for DC-RF Power Conversion in Wireless Power Transfer Systems (Invited)
Ryo Ishikawa
Invited oral presentation, English, URSI combined Atlantic / Asia-Pacific Radio Science Conference 2022 (URSI AT-AP-RASC 2022), Invited, International conference
30 May 2022

ゼロしきい値GaAs HEMTを用いた920 MHz及び2.45 GHz帯サブmW高効率整流器
吉田剛; 本城和彦; 石川亮
Oral presentation, Japanese, 2022年電子情報通信学会総合大会, Domestic conference
17 Mar. 2022

整流動作用大信号等価回路モデルを用いた広ダイナミックレンジ動作向け高効率GaN HEMT整流器設計
山崎純; 本城和彦; 石川亮
Oral presentation, Japanese, 2022年電子情報通信学会総合大会, Domestic conference
16 Mar. 2022

増幅器の負ゲートバイアス供給用ゼロ閾値GaAs HEMT整流器
長田多喜; 本城和彦; 石川亮
Oral presentation, Japanese, 2022年電子情報通信学会総合大会, Domestic conference
16 Mar. 2022

誘導ゲート駆動 FET を用いるゼロ閾値電圧ダイオード
椙江陽人; 田中愼一; 本城和彦; 石川亮
Oral presentation, Japanese, 2022年電子情報通信学会総合大会, Domestic conference
16 Mar. 2022

マルチ高調波処理スタブをインピーダンス変換回路に用いた高効率非対称ドハティ増幅器
髙木裕貴; 太田喜元; 本城和彦; 石川亮
Oral presentation, Japanese, 2022年電子情報通信学会総合大会, Domestic conference
16 Mar. 2022

無線電力伝送応用に向けたDC/RF変換用高効率・高利得多段増幅器
石川亮; 本城和彦
Oral presentation, Japanese, 2022年電子情報通信学会総合大会, Domestic conference
16 Mar. 2022

多モードOAM波集束用反射鏡の曲率最適化に関する一検討
石原克弥; 斉藤昭; 菊池晴貴; 和田渉; 本城和彦; 石川亮
Oral presentation, Japanese, 2022年電子情報通信学会総合大会, Domestic conference
15 Mar. 2022

2電力レベル設計28 GHz帯GaN HEMTドハティー増幅器MMIC (依頼講演)
石川亮; 瀬下拓也; 髙山洋一郎; 本城和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
27 Jan. 2022

θ/φ方向電流を有する球面アレイの生成する電磁界の固有モード展開
斉藤昭; 石川亮; 本城和彦
Oral presentation, Japanese, 2021年電子情報通信学会ソサイエティ大会, Domestic conference
17 Sep. 2021

OAM通信用集積ループアンテナアレイのバラン整合による性能改善
菊池晴貴; 斉藤昭; 和田渉; 鈴木博; 本城和彦; 石川亮
Oral presentation, Japanese, 2021年電子情報通信学会ソサイエティ大会, Domestic conference
15 Sep. 2021

集中定数素子4.5 GHz帯GaN HEMT MMICアウトフェージング増幅器
石川亮; 高山洋一郎; 本城和彦
Oral presentation, Japanese, 2021年電子情報通信学会ソサイエティ大会, Domestic conference
14 Sep. 2021

容量装荷スパイラル反射板を用いたループアンテナアレイによるOAM多重通信・無線電力伝送の通信特性改善
和田渉; 石川亮; 斉藤昭; 三宅久之助; 菊池晴貴; 鈴木博; 本城和彦
Oral presentation, Japanese, 2021年電子情報通信学会総合大会, Domestic conference
11 Mar. 2021

円形ループアンテナアレイを用いるOAM多重通信の固有モード伝送の評価
菊池晴貴; 斉藤昭; 三宅久之助; 和田渉; 鈴木博; 石川亮; 本城和彦
Oral presentation, Japanese, 2021年電子情報通信学会総合大会, Domestic conference
10 Mar. 2021

2 電力レベル設計準ミリ波帯GaN HEMT MMICドハティー増幅器
石川亮; 瀬下拓也; 高山洋一郎; 本城和彦
Oral presentation, Japanese, 2021年電子情報通信学会総合大会, Domestic conference
09 Mar. 2021

リアクタンス補償小型合成回路を用いた3.9GHz帯GaN HEMTアウトフェージング増幅器
小笠原遼一; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
10 Dec. 2020

OAM多重通信用円形ループアンテナアレイの無線電力伝送共用化に関する研究
和田渉; 石川亮; 斉藤昭; 三宅久之助; 菊池晴貴; 鈴木博; 本城和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
10 Dec. 2020

低誘電率基板を用いたOAM多重通信用ループアンテナアレイの集積化に関する検討
菊池晴貴; 斉藤昭; 三宅久之助; 和田渉; 鈴木博; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
10 Dec. 2020

入力電力レベル適応自己ゲートバイアス調整型広ダイナミックレンジ高効率整流器
山崎純; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
10 Dec. 2020

無線電力伝送用DC-RF 変換デバイスの高効率化に関する検討
石川亮
Oral presentation, Japanese, 第6 回宇宙太陽発電(SSPS)シンポジウム, Domestic conference
04 Dec. 2020

OAM通信用ループアンテナを直接平衡励振する直列接続型高調波処理GaN HEMTドハティ増幅器の検討
中田将大; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
17 Jul. 2020

OAM多重通信と無線電力伝送を同時に実現する共用ループアンテナ
和田渉; 石川亮; 斉藤昭; 三宅久之助; 菊池晴貴; 鈴木博; 本城和彦
Oral presentation, Japanese, 2020年電子情報通信学会総合大会, Domestic conference
20 Mar. 2020

T型スタブを用いた低スプリアス・高効率非対称ドハティ増幅器
髙木裕貴; 長谷川直輝; 太田喜元; 石川亮; 本城和彦
Oral presentation, Japanese, 2020年電子情報通信学会総合大会, Domestic conference
20 Mar. 2020

3.9GHz帯小型合成回路によるアウトフェージング増幅器
小笠原遼一; 髙山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 2020年電子情報通信学会総合大会, Domestic conference
20 Mar. 2020

900MHz帯/4.5GHz帯2x2次元切替スイッチの開発
石井岳人; 中丸靖崇; 水谷浩; 石川亮; 本城和彦
Oral presentation, Japanese, 2020年電子情報通信学会総合大会, Domestic conference
20 Mar. 2020

円形ループアンテナアレイの端子方位制御による通過アイソレーション改善
斉藤昭; 三宅久之助; 石川亮; 本城和彦
Oral presentation, Japanese, 2020年電子情報通信学会総合大会, Domestic conference
20 Mar. 2020

OAM多重通信に用いるループアンテナアレイの集積化の検討
菊池晴貴; 斉藤昭; 三宅久之助; 和田渉; 鈴木博; 石川亮; 本城和彦
Oral presentation, Japanese, 2020年電子情報通信学会総合大会, Domestic conference
20 Mar. 2020

ループアンテナを用いたOAM多重通信における抵抗装荷による干渉波抑制
三宅久之助; 斉藤昭; 鈴木博; 石川亮; 本城和彦
Oral presentation, Japanese, 2020年電子情報通信学会総合大会, Domestic conference
20 Mar. 2020

ゼロ閾値GaAs HEMTを用いた広ダイナミックレンジ整流器
山崎純; 石川亮; 本城和彦
Oral presentation, Japanese, 2020年電子情報通信学会総合大会, Domestic conference
20 Mar. 2020

マイクロ波整流器の最新設計技術：帰還容量を利用したゲートスイッチング方式トランジスタ整流回路
石川亮
Public discourse, Japanese, Microwave Workshops & Exhibition (MWE 2019), Domestic conference
27 Nov. 2019

円形ループアンテナを用いたOAM通信における抵抗設置による干渉波抑制
三宅久之助; 斉藤昭; 鈴木博; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
15 Nov. 2019

低しきい値エンハンスメント型GaAs HEMTを用いたゲートスイッチング方式微小電力整流器
吉田剛; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
14 Nov. 2019

高調波処理を含めた二入力電力レベル最適化による高効率GaN HEMTドハティ増幅器
瀬下拓也; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
14 Nov. 2019

スプリアス抑圧回路とインピーダンス変換回路にT型スタブを用いた高効率ドハティ増幅器
髙木裕貴; 長谷川直輝; 太田喜元; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
14 Nov. 2019

高調波処理を含めた二入力電力レベル最適化による高効率GaN HEMTドハティ増幅器（報告予定）
瀬下拓也; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
14 Nov. 2019

スプリアス抑圧回路を用いた高効率ドハティ増幅器
髙木裕貴; 長谷川直輝; 太田喜元; 石川亮; 本城和彦
Oral presentation, Japanese, 2019年電子情報通信学会ソサイエティ大会, Domestic conference
10 Sep. 2019

ループアンテナを用いたOAM多重通信方式における給電ケーブルの影響の解析
三宅久之助; 斉藤昭; 大塚啓人; 山岸遼平; 鈴木博; 石川亮; 本城和彦
Oral presentation, Japanese, 2019年電子情報通信学会総合大会, Domestic conference
22 Mar. 2019

OAM波を生成するループアンテナと円形アレーアンテナの関係
鈴木博; 斉藤昭; 本城和彦; 石川亮
Oral presentation, Japanese, 2019年電子情報通信学会総合大会, Domestic conference
22 Mar. 2019

エンハンスメント型GaAs HEMT微小電力整流器
吉田剛; 石川亮; 本城和彦
Oral presentation, Japanese, 2019年電子情報通信学会総合大会, Domestic conference
22 Mar. 2019

10MHz帯零しきい値トランジスタ増幅・整流器
久米鳳春; 石川亮; 本城和彦
Oral presentation, Japanese, 2019年電子情報通信学会総合大会, Domestic conference
22 Mar. 2019

四分の一波長インピーダンス変換器を用いない高調波処理 GaN HEMT 高効率ドハティ増幅器
瀬下拓也; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 2019年電子情報通信学会総合大会, Domestic conference
22 Mar. 2019

バックオフ/飽和 両領域最適化設計GaN HEMT MMIC 非対称ドハティー増幅器
石川亮; 高山洋一郎; 本城和彦
Oral presentation, Japanese, 2019年電子情報通信学会総合大会, Domestic conference
22 Mar. 2019

異なる飽和出力電力のGaN HEMTを用いた非対称高効率ドハティ増幅器
髙木裕貴; 長谷川直輝; 太田喜元; 石川亮; 本城和彦
Oral presentation, Japanese, 2019年電子情報通信学会総合大会, Domestic conference
22 Mar. 2019

Chireix増幅器の高効率動作範囲を拡大する手法の提案
安井吏; 石川亮; 本城和彦
Oral presentation, Japanese, 2019年電子情報通信学会総合大会, Domestic conference
22 Mar. 2019

円形ループアンテナアレイに平面波が入射した場合の受信電流の解析
斉藤昭; 石川亮; 本城和彦
Oral presentation, Japanese, 2019年電子情報通信学会総合大会, Domestic conference
20 Mar. 2019

零しきい値Si MOSトランジスタを用いた零ゲートバイアス10MHz帯増幅・整流器
久米鳳春; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
14 Mar. 2019

第5世代移動通信システム実現に向けたマルチバンド高周波アナログ無線部構成技術の研究開発析
山尾泰; 本城和彦; 石川亮; 高山洋一郎; 斉藤昭
Oral presentation, Japanese, 電子情報通信学会無線通信システム研究会, Domestic conference
08 Mar. 2019

円形アレーおよびループアンテナで生成されるOAM波のベクトルポテンシャル解析
鈴木博; 斉藤昭; 本城和彦; 石川亮
Oral presentation, Japanese, 電子情報通信学会無線通信システム研究会, Domestic conference
07 Mar. 2019

5Gに向けた増幅回路技術：デュアルバンド増幅器と関連技術
石川亮
Public discourse, Japanese, Microwave Workshops & Exhibition (MWE 2018), Domestic conference
29 Nov. 2018

5Gに向けた高効率増幅器技術：電力増幅器のバックオフ領域高効率化技術
石川亮
Public discourse, Japanese, Microwave Workshops & Exhibition (MWE 2018), Domestic conference
28 Nov. 2018

［特別講演］2018年IEEE MTT-S国際マイクロ波シンポジウム出席報告
清水隆志; 石川亮; 上田哲也; 大平昌敬; 岡崎浩司; 小松崎優治; 田村昌也
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
16 Nov. 2018

ループアンテナアレイを用いたOAM-MIMO通信の評価
大塚啓人; 山岸遼平; 斉藤昭; 鈴木博; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
15 Nov. 2018

円形ループアレイを用いたOAM通信における反射板近接化によるモード単一性の向上
山岸遼平; 大塚啓人; 斉藤昭; 鈴木博; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
15 Nov. 2018

高調波インピーダンス変成器の小型化およびそのF級増幅器への応用
齋木研人; 田中愼一; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
15 Nov. 2018

GaN HEMTダーリントン電力増幅器の個別バイアス調整による高効率・低ひずみ化
北村淳; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
18 Oct. 2018

OAM通信用ループアンテナの放射電磁界が放出する軌道角運動量の解析
斉藤昭; 大塚啓人; 山岸遼平; 石川亮; 鈴木博; 本城和彦
Oral presentation, Japanese, 2018年電子情報通信学会ソサイエティ大会, Domestic conference
14 Sep. 2018

ループアンテナの直交偏波を活用した8チャンネル多重近距離OAM通信の実測評価
三宅久之助; 斉藤昭; 大塚啓人; 山岸遼平; 鈴木博; 石川亮; 本城和彦
Oral presentation, Japanese, 2018年電子情報通信学会ソサイエティ大会, Domestic conference
11 Sep. 2018

12GHz帯OAM通信用ループアンテナアレイにおける遠距離通信評価
大塚啓人; 山岸遼平; 斉藤昭; 鈴木博; 石川亮; 本城和彦
Oral presentation, Japanese, 2018年電子情報通信学会ソサイエティ大会, Domestic conference
11 Sep. 2018

円形ループアンテナアレイを用いたOAM通信における反射板近接化の効果
山岸遼平; 大塚啓人; 斉藤昭; 鈴木博; 石川亮; 本城和彦
Oral presentation, Japanese, 2018年電子情報通信学会ソサイエティ大会, Domestic conference
11 Sep. 2018

多機能SPDTデバイスの実証
中丸靖崇; 水谷浩; 瀬下拓也; 石川亮; 本城和彦
Oral presentation, Japanese, 2018年電子情報通信学会ソサイエティ大会, Domestic conference
11 Sep. 2018

18GHz帯/28GHz帯GaN HEMT電力増幅器MMICの試作と特性評価
安井吏; 石川亮; 本城和彦
Oral presentation, Japanese, 2018年電子情報通信学会ソサイエティ大会, Domestic conference
11 Sep. 2018

高効率低ひずみ独立バイアス型ダーリントンGaN HEMT増幅器
北村淳; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 2018年電子情報通信学会総合大会, Domestic conference
21 Mar. 2018

高調波リアクティブ終端型11GHz帯GaN HEMT高効率電力増幅器
小川智史; 石川亮; 本城和彦
Oral presentation, Japanese, 2018年電子情報通信学会総合大会, Domestic conference
21 Mar. 2018

アンテナ内2端子ループアレイを用いたOAM 通信における多重度倍増の検討
斉藤昭; 大塚啓人; 山岸遼平; 石川亮; 本城和彦
Oral presentation, Japanese, 2018年電子情報通信学会総合大会, Domestic conference
20 Mar. 2018

OAM通信用ループアンテナアレイにおける通過アイソレーションとEVMの関係
大塚啓人; 山岸遼平; 斉藤昭; 鈴木博; 石川亮; 本城和彦
Oral presentation, Japanese, 2018年電子情報通信学会総合大会, Domestic conference
20 Mar. 2018

［特別講演］2017年ヨーロッパマイクロ波会議出席報告
石川亮; 天川修平; 陳春平; 河口民雄; 岡崎浩司
Invited oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
26 Jan. 2018

高効率トランジスタ整流器設計用MHz帯基本波・高調波アクティブ・ソース プルシステム
町田港; 石川亮; 本城和彦
Invited oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
20 Dec. 2017

PINダイオードを用いた4.5-/4.9-GHz帯域可変型GaN HEMT高効率電力増幅器
眞下和樹; 石川亮; 本城和彦
Invited oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
19 Dec. 2017

エナジーハーベスティング用極低電力動作GaAs pHEMT整流器
大吉一成; 石川亮; 本城和彦
Invited oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
19 Dec. 2017

Ultra-Low-Power GaAs pHEMT Rectifier for Energy Harvesting System
Kazumasa Oyoshi; Ryo Ishikawa; Kazuhiko Honjo
Oral presentation, English, 2017 Korea-Japan Microwave Workshop, IEEE MTT-S Seoul Chapter/JapanChapter/Kansai Chapter/NagoyaChapter, Kikai-Shinko-KaikanBuilding, Toko, Japan, International conference
11 Dec. 2017

OAM通信用ループアレイの端子角度制御による干渉波抑制効果の解析
大塚啓人; 山岸遼平; 斉藤昭; 石川亮; 本城和彦
Invited oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
10 Nov. 2017

円形ループアレイを用いたOAM通信における反射板によるモード単一性の向上
山岸遼平; 大塚啓人; 斉藤昭; 石川亮; 本城和彦
Invited oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
10 Nov. 2017

FETドレーン・ゲート帰還容量のマイクロ波電力増幅特性への影響
高山洋一郎; 本城和彦; 石川亮
Invited oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
09 Nov. 2017

マルチ高調波処理回路を用いた低SHF帯広帯域GaN HEMT高効率電力増幅器
髙木裕貴; 石川亮; 本城和彦
Invited oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
09 Nov. 2017

2増幅回路結合構成コンカレントデュアルバンドGaN HEMT電力増幅器の特性改善
西沢永; 高山洋一郎; 石川亮; 本城和彦
Invited oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
09 Nov. 2017

4.5/8.5GHz帯コンカレントデュアルバンド高効率GaN HEMT電力増幅器
西沢永; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 2017年電子情報通信学会ソサイエティ大会, Domestic conference
14 Sep. 2017

反射板付きループアレイアンテナを用いたOAM通信におけるモード単一性の向上
山岸遼平; 大塚啓人; 斉藤昭; 石川亮; 本城和彦
Oral presentation, Japanese, 2017年電子情報通信学会ソサイエティ大会, Domestic conference
13 Sep. 2017

OAM通信用ループアレイアンテナの端子角度制御による干渉波抑制効果
大塚啓人; 山岸遼平; 斉藤昭; 石川亮; 本城和彦
Oral presentation, Japanese, 2017年電子情報通信学会ソサイエティ大会, Domestic conference
13 Sep. 2017

ループアンテナアレイを用いたOAM通信における多重度倍増の検討
斉藤昭; 大塚啓人; 山岸遼平; 石川亮; 本城和彦
Oral presentation, Japanese, 2017年電子情報通信学会ソサイエティ大会, Domestic conference
13 Sep. 2017

8.5 GHz-Band GaN HEMT High-Efficiency Power Amplifier with Harmonic Reactive Termination
Haruka Nishizawa; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
Oral presentation, English, 2017 Thailand-Japan Microwave, Bangkok, Thailand, International conference
16 Jun. 2017

Study on Compact Bidirectional DC-DC Converter Consisting of 100-MHz High-Efficiency Amplifier and Rectifier
Shogo Mizoguchi; Kazuhiko Honjo; Ryo Ishikawa
Oral presentation, English, 2017 Thailand-Japan Microwave, Bangkok, Thailand, International conference
15 Jun. 2017

Study on 900 MHz Band Class-F GaAs HEMT Rectifier with Wide Dynamic Range Operation
Misako Fujimaki; Ryo Ishikawa; Kazuhiko Honjo
Oral presentation, English, 2017 Thailand-Japan Microwave, Bangkok, Thailand, International conference
15 Jun. 2017

マイクロ波電力増幅器の高効率化原理
石川亮
Public discourse, Japanese, 特別ワークショップ「高周波帯のデバイス特性評価技術の再入門と最前線」, 電子情報通信学会 エレクトロニクスソサエティ 電子デバイス研究専門委員会
19 Apr. 2017

CRLH線路におけるユニットセルの放射特性
瀬下拓也; 中丸靖崇; 水谷浩; 石川亮; 本城和彦
Oral presentation, Japanese, 2017年電子情報通信学会総合大会, Domestic conference
25 Mar. 2017

円形ループアンテナの磁気量子数放射モード単一化の解析
斉藤昭; 大塚啓人; 山岸遼平; 石川亮; 本城和彦
Oral presentation, Japanese, 2017年電子情報通信学会総合大会, Domestic conference
24 Mar. 2017

高効率トランジスタ整流器のインピーダンス最適化に関する一検討
町田港; 石川亮; 本城和彦
Oral presentation, Japanese, 2017年電子情報通信学会総合大会, Domestic conference
23 Mar. 2017

帯域切替型リコンフィギュラブルRFスイッチ回路の提案
水谷浩; 石川亮; 本城和彦
Oral presentation, Japanese, 2017年電子情報通信学会総合大会, Domestic conference
22 Mar. 2017

導体パターンのみを用いたCRLH線路スタブ高調波処理回路による4GHz帯F級GaN HEMT増幅器
小泉聡太; 田中愼一; 石川亮; 本城和彦
Oral presentation, Japanese, 2017年電子情報通信学会総合大会, Domestic conference
22 Mar. 2017

4/8 GHz帯コンカレント動作GaN HEMT MMIC増幅器
石川亮; 高山洋一郎; 本城和彦
Oral presentation, Japanese, 2017年電子情報通信学会総合大会, Domestic conference
22 Mar. 2017

4.5/4.9GHz帯域可変型GaN HEMT高効率増幅器の基礎検討
眞下和樹; 石川亮; 本城和彦
Oral presentation, Japanese, 2017年電子情報通信学会総合大会, Domestic conference
22 Mar. 2017

T型スタブを用いた複数高調波処理によるデュアルバンド高効率GaN HEMT電力増幅器
髙木裕貴; 石川亮; 本城和彦
Oral presentation, Japanese, 2017年電子情報通信学会総合大会, Domestic conference
22 Mar. 2017

円形ループアレイアンテナを用いた遠距離OAM通信における反射板による影響評価
山岸遼平; 大塚啓人; 斉藤昭; 石川亮; 本城和彦
Oral presentation, Japanese, 2017年電子情報通信学会総合大会, Domestic conference
22 Mar. 2017

ループアレイアンテナを用いた遠距離OAM通信の実測評価
大塚啓人; 山岸遼平; 斉藤昭; 石川亮; 本城和彦
Oral presentation, Japanese, 2017年電子情報通信学会総合大会, Domestic conference
22 Mar. 2017

2個のトランジスタによる電流帰還対を用いた広帯域増幅器
丸山有彗; 石川 亮; 本城和彦
電子情報通信学会マイクロ波研究会
02 Mar. 2017

電圧帰還対を用いた二段広帯域負帰還増幅器の設計と試作評価
大塚啓人; 石川 亮; 本城和彦
電子情報通信学会マイクロ波研究会
02 Mar. 2017

円形ループアンテナを用いた4値多重軌道角運動量通信方式
斉藤昭; 大塚啓人; 山岸遼平; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会アンテナ・伝播研究会, Domestic conference
09 Feb. 2017

RF整流器のシミュレーション再現性を考慮したGaN HEMT大信号デバイスモデルの提案
安井吏; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
16 Dec. 2016

900 MHz帯GaAs HEMT F級整流器の広ダイナミックレンジ化に関する研究
藤牧美咲子; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
16 Dec. 2016

［特別講演］2016年ヨーロッパマイクロ波会議出席報告
須賀良介; 石川亮; 鳥居拓真; 陳春平; 安部素実; 吉田賢史
Invited oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
16 Dec. 2016

２高調波短絡用T型スタブによるリアクティブ終端負荷回路を用いたGaN HEMT高効率電力増幅器
髙木裕貴; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
15 Dec. 2016

単一GaN HEMTを用いたデュアルバンド電力増幅器における2周波同時増幅動作時の大信号特性の検討及び線形性改善
丸山有彗; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
15 Dec. 2016

2増幅回路結合構成コンカレントデュアルバンド電力増幅器
西沢永; 榎本純; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
15 Dec. 2016

基礎から学ぶマイクロ波電力増幅器設計 -高効率化-
石川亮
Public discourse, Japanese, Microwave Workshops & Exhibition (MWE 2016), Domestic conference
02 Dec. 2016

磁気量子数単一モードを放射するループアンテナアレイを用いたOAM通信の解析
斉藤昭; 石川亮; 本城和彦
Oral presentation, Japanese, 2016年電子情報通信学会ソサイエティ大会, Domestic conference
23 Sep. 2016

ループアンテナアレイを用いたOAM通信のシミュレーションならびに実測評価
大塚啓人; 斉藤昭; 石川亮; 本城和彦
Oral presentation, Japanese, 2016年電子情報通信学会ソサイエティ大会, Domestic conference
23 Sep. 2016

バラクタダイオードを用いたアクティブCRLH線路におけるユニットセルのSパラメータ解析
瀬下拓也; 中丸靖崇; 水谷浩; 石川亮; 本城和彦
Oral presentation, Japanese, 2016年電子情報通信学会ソサイエティ大会, Domestic conference
22 Sep. 2016

高効率個別増幅構成コンカレントデュアルバンド増幅器
榎本純; 西沢永; 石川亮; 高山洋一郎; 本城和彦
Oral presentation, Japanese, 2016年電子情報通信学会ソサイエティ大会, Domestic conference
21 Sep. 2016

HPF/LPF切替型RFスイッチの大信号特性
水谷浩; 石川亮; 本城和彦
Oral presentation, Japanese, 2016年電子情報通信学会ソサイエティ大会, Domestic conference
20 Sep. 2016

第3象限領域でのVDS-ID特性の再現性を改善したGaN HEMTデバイスモデルの提案
安井吏; 石川亮; 本城和彦
Oral presentation, Japanese, 2016年電子情報通信学会ソサイエティ大会, Domestic conference
20 Sep. 2016

単一GaN HEMTを用いたデュアルバンド電力増幅器における2波同時増幅動作時の線形性改善
丸山有彗; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 2016年電子情報通信学会ソサイエティ大会, Domestic conference
20 Sep. 2016

CRLH線路スタブF級高調波処理回路を用いたGaN HEMT増幅器
小泉聡太; 田中愼一; 石川亮; 本城和彦
Oral presentation, Japanese, 2016年電子情報通信学会ソサイエティ大会, Domestic conference
20 Sep. 2016

HPF\LPF切替型RFスイッチの大信号特性
水谷浩; 石川亮; 本城和彦
Oral presentation, Japanese, 2016年電子情報通信学会ソサイエティ大会, Domestic conference
20 Sep. 2016

900 MHz帯GaAs HEMT F級整流器の広ダイナミックレンジ化に関する基礎検討
藤牧美咲子; 石川亮; 本城和彦
Oral presentation, Japanese, 2016年電子情報通信学会総合大会, Domestic conference
16 Mar. 2016

2高調波同時短絡スタブによるリアクティブ終端負荷回路を用いたGaN HEMT高効率電力増幅器
髙木裕貴; 石川亮; 本城和彦
Oral presentation, Japanese, 2016年電子情報通信学会総合大会, Domestic conference
15 Mar. 2016

2増幅回路構成コンカレントデュアルバンド増幅器結合用分波回路
西沢永; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 2016年電子情報通信学会総合大会, Domestic conference
15 Mar. 2016

高次モードを考慮した平面扇型アンテナの広帯域特性の解析
金龍; 斉藤昭; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
17 Dec. 2015

低周波アクティブ高調波ロード・プルを利用した高効率マイクロ波電力増幅器の最適負荷インピーダンス推定の高精度化
陶堯; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
17 Dec. 2015

マイクロ波無線電力伝送用増幅・整流切替モジュールの試作・評価
石川亮; 本城 和彦
Oral presentation, Japanese, 電子情報通信学会マイクロ波研究会, Domestic conference
20 Nov. 2015

寄生非線型容量を考慮した低周波トランジスタ真性部特性抽出による高効率マイクロ波増幅器設計
陶堯; 石川亮; 本城和彦
Oral presentation, Japanese, 2015年電子情報通信学会ソサイエティ大会, Domestic conference
09 Sep. 2015

高調波処理を含む入出力整合回路の周波数特性を考慮した高効率GaNHEMT電力増幅器の広帯域設計
榎本純; 石川亮; 本城和彦
Oral presentation, Japanese, 2015年電子情報通信学会ソサイエティ大会, Domestic conference
09 Sep. 2015

フィルタ特性の可変が行える周期構造を有する新しい高アイソレーションRFスイッチ回路の提案
水谷浩; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告／電子情報通信学会マイクロ波研究会, Domestic conference
25 Jun. 2015

ワイドアングル平面扇形アンテナの広帯域特性に関する解析
斉藤昭; 金龍; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告／電子情報通信学会マイクロ波研究会, Domestic conference
28 May 2015

高出力GaN HEMT素子を用いた高電力高効率増幅器／整流器の設計・試作およびその評価
森大介; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告／電子情報通信学会マイクロ波研究会, Domestic conference
28 May 2015

マイクロ波無線電力伝送用増幅・整流器のパルス幅変調電力制御に関する実験的検証
石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告／電子情報通信学会マイクロ波研究会, Domestic conference
16 Apr. 2015

高電力GaN HEMT 可変移相器MMIC
石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2015年総合大会講演論文集 エレクロトニクス／2015年電子情報通信学会総合大会, Domestic conference
Mar. 2015

マイクロ波超高効率電力増幅・整流回路の共用化によるスマートワイヤレスモジュール
本城和彦; 石川亮
Oral presentation, Japanese, 電子情報通信学会2015年総合大会講演論文集 通信／2015年電子情報通信学会総合大会, Domestic conference
Mar. 2015

ワイドアングル平面扇型アンテナが有する広帯域特性の解析
斉藤昭; 小野寺祥一; 金龍; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2015年総合大会講演論文集 通信／2015年電子情報通信学会総合大会, Domestic conference
Mar. 2015

平面扇型広帯域アンテナ特性の導体のなす角度依存性
金龍; 斉藤昭; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2015年総合大会講演論文集 通信／2015年電子情報通信学会総合大会, Domestic conference
Mar. 2015

デュアルバンド高調波リアクティブ終端処理高効率GaN HEMT電力増幅器
榎本純; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告／電子情報通信学会マイクロ波研究会, Domestic conference
18 Dec. 2014

5.8 GHzウィルキンソン型電力可変不等分配器の試作・評価
大田雄介; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告／電子情報通信学会マイクロ波研究会, Domestic conference
18 Dec. 2014

Theory and Practice in Microwave High Power Amplifiers
Ryo Ishikawa
Public discourse, English, 2014 Asia Pacific Microwave Conference, International conference
04 Nov. 2014

インピーダンス反転回路を用いない広帯域高効率C帯GaAs p-HEMTドハティ増幅器MMIC
吉田剛; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告／電子情報通信学会マイクロ波研究会, Domestic conference
Oct. 2014

GaN 素子対応MHz 帯高調波アクティブロードプルによる高効率増幅器設計
石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2014年ソサイエティ大会講演論文集 エレクトロニクス／2014年電子情報通信学会ソサイエティ大会, Domestic conference
Sep. 2014

デュアルバンド高調波リアクティブ終端処理高効率GaN HEMT電力増幅器の設計及び試作
榎本純; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2014年ソサイエティ大会講演論文集 エレクトロニクス／2014年電子情報通信学会ソサイエティ大会, Domestic conference
Sep. 2014

小型広帯域高効率C帯GaAs p-HEMT MMICドハティ増幅器
吉田剛; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2014年ソサイエティ大会講演論文集 エレクトロニクス／2014年電子情報通信学会ソサイエティ大会, Domestic conference
Sep. 2014

可変焦点無線電力伝送システム用5.8GHzウィルキンソン型電力可変不等分配器の基礎検討
大田雄介; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2014年ソサイエティ大会講演論文集 エレクトロニクス／2014年電子情報通信学会ソサイエティ大会, Domestic conference
Sep. 2014

集中定数素子内蔵2周波アンテナの解析的検討
小野寺祥一; 斉藤昭; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2014年ソサイエティ大会講演論文集 通信／2014年電子情報通信学会ソサイエティ大会, Domestic conference
Sep. 2014

〔特別講演〕2013年ヨーロッパマイクロ波会議出席報告
堤恒次; 石川亮; 湯川秀憲; 河口民雄; 枚田明彦; 鴨田浩和
Invited oral presentation, Japanese, 電子情報通信学会技術研究報告,電子情報通信学会マイクロ波研究会, Domestic conference
Mar. 2014

パルス応答特性を用いたGaN HEMT 大信号モデル用多段はしご型RC 熱等価回路の抽出手法
吉田慎悟; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2014年総合大会講演論文集 エレクトロニクス,2014年電子情報通信学会総合大会, Domestic conference
Mar. 2014

高調波処理リアクティブ終端型2GHz 帯30W 級高効率GaN HEMT 増幅器の試作と周波数特性の考察
矢尾知博; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2014年総合大会講演論文集 エレクトロニクス,2014年電子情報通信学会総合大会, Domestic conference
Mar. 2014

λ/4 インバータを用いない直列型C帯GaAs pHEMT MMICドハティ増幅器
吉田剛; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2014年総合大会講演論文集 エレクトロニクス,2014年電子情報通信学会総合大会, Domestic conference
Mar. 2014

2.0-2.8 GHz 帯高効率独立バイアス形GaAs pHEMT カスコード電力増幅器
田崎悟史; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2014年総合大会講演論文集 エレクトロニクス,2014年電子情報通信学会総合大会, Domestic conference
Mar. 2014

Power Gain Characteristic of Independently Biased HBT Cascode Chip
Duy Manh Luong; Yoichiro Takayama; Ryo Ishikawa; Kazuhiko Honjo
Oral presentation, Japanese, 電子情報通信学会2014年総合大会講演論文集 エレクトロニクス,2014年電子情報通信学会総合大会, Domestic conference
Mar. 2014

無線電力伝送用高効率GaN HEMT 整流器
石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2014年総合大会講演論文集 エレクトロニクス,2014年電子情報通信学会総合大会, Domestic conference
Mar. 2014

非対称結合線路を用いた広帯域バランの研究
遠藤大貴; 斉藤昭; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2014年総合大会講演論文集 エレクトロニクス,2014年電子情報通信学会総合大会, Domestic conference
Mar. 2014

扇型線状アンテナ放射パターンの多極展開を用いたモード推移の解析
斉藤昭; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2014年総合大会講演論文集 エレクトロニクス,2014年電子情報通信学会総合大会, Domestic conference
Mar. 2014

無線電力・情報伝送システムの高効率電力可変制御に関する一検討
森大介; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2014年総合大会講演論文集 エレクトロニクス,2014年電子情報通信学会総合大会, Domestic conference
Mar. 2014

バラクタと集中定数素子を内蔵したリコンフィギャラブル2周波アンテナ
小野寺祥一; 石川亮; 斉藤昭; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,電子情報通信学会マイクロ波研究会, Domestic conference
20 Dec. 2013

2GHz帯リアクティブ終端型高効率GaN HEMT増幅器の試作と周波数特性の考察
矢尾知博; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,電子情報通信学会マイクロ波研究会, Domestic conference
20 Dec. 2013

λ/4インバーターを用いない小型・広帯域並列負荷形 GaN HEMT ドハティ電力増幅器
井口洋輔; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,電子情報通信学会マイクロ波研究会
20 Dec. 2013

非対称結合線路を用いた広帯域バランの研究
遠藤大貴; 斉藤昭; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,電子情報通信学会マイクロ波研究会, Domestic conference
19 Dec. 2013

GaN HEMT大信号モデル用多段はしご型RC熱等価回路の実験的抽出手法
吉田慎悟; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,電子情報通信学会マイクロ波研究会, Domestic conference
19 Dec. 2013

マイクロ波高効率電力増幅と高効率整流
本城和彦; 石川亮
Public symposium, Japanese, Microwave Workshops & Exhibition (MWE2013)ワークショップ, IEICE, 横浜
Nov. 2013

マイクロ波無線電力伝送用高効率トランジスタRF-DC相互変換回路
石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,電子情報通信学会マイクロ波研究会
17 Oct. 2013

多重極展開を用いた高次モードを含む擬似線状アンテナ特性解析の基礎検討
斉藤昭; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2013年ソサイエティ大会講演論文集 通信,2013年電子情報通信学会ソサイエティ大会
Sep. 2013

2帯域を独立に制御できるリコンフィギャラブル2周波アンテナ
小野寺祥一; 石川亮; 斉藤昭; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2013年ソサイエティ大会講演論文集 通信,2013年電子情報通信学会ソサイエティ大会
Sep. 2013

MHz帯アクティブロードプル評価に基づくトランジスタ高効率動作のための最適高調波負荷特性推定
石川亮; 高山洋一郎; 本城和彦
Oral presentation, Japanese, 電気学会研究会資料,電気学会電子デバイス研究会
07 Mar. 2013

FETスイッチでアレイーファクタを変調した空間変調デジタル通信方式
長谷川光平; 石川亮; 斉藤昭; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2013年総合大会講演論文集 通信,2013年電子情報通信学会総合大会
Mar. 2013

集中定数素子内蔵多周波リコンフィギャラブルアンテナの基礎検討
小野寺祥一; 斉藤昭; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2013年総合大会講演論文集 通信,2013年電子情報通信学会総合全国大会
Mar. 2013

無線電力伝送用高効率増幅・整流一体化モジュール開発に関する一検討
石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2013年総合大会講演論文集 エレクトロニクス,2013年電子情報通信学会総合大会
Mar. 2013

高調波リアクティブ終端処理2.1GHz帯高効率GaN HEMT増幅器
矢尾知博; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2013年総合大会講演論文集 エレクトロニクス,2013年電子情報通信学会総合大会
Mar. 2013

λ/4インバーターを用いない小型・広帯域並列負荷形GaN HEMTドハティ電力増幅器
井口洋輔; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2013年総合大会講演論文集 エレクトロニクス,2013年電子情報通信学会総合大会
Mar. 2013

独立バイアス形1.2-2.0GHz帯GaAs pHEMTカスコード電力増幅器MMIC
田崎悟史; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2013年総合大会講演論文集 エレクトロニクス,2013年電子情報通信学会総合大会
Mar. 2013

独立バイアス形1.2-2.0GHz帯GaAs pHEMTカスコード電力増幅器MMIC
田崎悟史; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,電子情報通信学会マイクロ波研究会
Dec. 2012

MHz帯高調波アクティブ・ロードプルシステムを用いたGHz帯高調波処理高効率電力増幅器の設計手法
石川亮; 高山洋一郎; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,電子情報通信学会マイクロ波研究会
14 Nov. 2012

FETスイッチ内蔵の散乱体を用いた空間変調方式の検討
長谷川光平; 石川亮; 斉藤昭; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,電子情報通信学会マイクロ波研究会
Nov. 2012

InGaP/GaAs HBTを用いた高効率低ひずみ独立バイアス形カスコード電力増幅器
高木裕貴; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,電子情報通信学会マイクロ波研究会
11 Oct. 2012

Ultra High Efficiency Microwave Power Amplifier for Wireless Power Transmission
Kazuhiko Honjo; Ryo Ishikawa; Yoichiro Takayama
Invited oral presentation, English, Proc. of 2012 European Microwave Conference, EuMA, Amsterdam, Netherlands, International conference
Oct. 2012

四分の一波長インピーダンス変換回路を用いない広帯域ドハティ電力増幅器の設計及び試作
渡邉真太朗; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,電子情報通信学会マイクロ波研究会
Oct. 2012

マイクロストリップアレイアンテナと二散乱体を用いた5.8GHz帯無線電力伝送用空間変調モジュール
井上泰平; 長谷川光平; 斉藤昭; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,電子情報通信学会マイクロ波研究会
Oct. 2012

マイクロストリップアレイアンテナと二散乱体を用いた5.8GHz帯無線電力伝送用空間変調モジュール
井上泰平; 長谷川光平; 斉藤昭; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2012年ソサイエティ大会講演論文集 通信,2012年電子情報通信学会ソサイエティ大会
Sep. 2012

バラクタ装荷2散乱体を用いた空間変調方式の変調速度に関する基礎検討
長谷川光平; 石川亮; 斉藤昭; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2012年ソサイエティ大会講演論文集 通信,2012年電子情報通信学会ソサイエティ大会
Sep. 2012

MHz帯高調波アクティブロードプル評価によるGHz帯高効率増幅器設計
石川亮; 高山洋一郎; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2012年ソサイエティ大会講演論文集 エレクトロニクス,2012年電子情報通信学会ソサイエティ大会
Sep. 2012

1.9GHz帯高効率低ひずみ独立バイアス形InGaP/GaAs HBTカスコード電力増幅器
高木裕貴; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2012年ソサイエティ大会講演論文集 エレクトロニクス,2012年電子情報通信学会ソサイエティ大会
Sep. 2012

四分の一波長インピーダンス変換回路を用いないGaN HEMTドハティ電力増幅器の設計及び試作
渡邉真太朗; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2012年ソサイエティ大会講演論文集 エレクトロニクス,2012年電子情報通信学ソサイエティ大会
Sep. 2012

中空配置非対称結合線路の広帯域バラン特性に関する回路論的解析
斉藤昭; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2012年ソサイエティ大会講演論文集 エレクトロニクス,2012年電子情報通信学会ソサイエティ大会
Sep. 2012

櫛形キャパシタを装荷した小型ダブルスタブ共振器のMMIC応用
片寄孝雄; 田中愼一; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2012年ソサイエティ大会講演論文集 エレクトロニクス,2012年電子情報通信学会ソサイエティ大会
Sep. 2012

２散乱体を用いた空間変調無線伝送方式の検討
斉藤昭; 長谷川光平; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2012年総合大会講演論文集 通信,2012年電子情報通信学会総合大会
Mar. 2012

バラクタを用いた2散乱体による空間変調の実験的検証
長谷川光平; 斉藤昭; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2012年総合大会講演論文集 通信,2012年電子情報通信学会総合大会
Mar. 2012

因数分解比較法による寄生成分補償型集中定数逆Ｆ級GaN HEMT 電力増幅器の設計と実験的検証
三浦理; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2012年総合大会講演論文集 エレクトロニクス,2012年電子情報通信学会総合大会
Mar. 2012

高効率低ひずみ独立バイアス形カスコードGaN HEMT電力増幅器
石川亮; 高山洋一郎; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,マイクロ波研究会
24 Nov. 2011

RCはしご型熱メモリ効果補償回路を適用したHBT増幅器のひずみ解析およびその補償回路パラメータの決定法
石川亮; 木村淳一; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,マイクロ波研究会
24 Nov. 2011

4次までの高調波位相制御を行ったC帯高効率電力増幅器の実験的検証
神山仁宏; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,マイクロ波研究会
13 Oct. 2011

マイクロ波ワイヤレス電力伝送波のサイドローブを利用した情報伝送システムの基礎研究
長谷川光平; 星野有哉; 石川亮; 斉藤昭; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,マイクロ波研究会
Oct. 2011

InGaP/GaAs HBTを用いた独立バイアス形カスコード電力増幅器MMIC
高木裕貴; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,マイクロ波研究会
Oct. 2011

高調波処理によるマイクロ波電力増幅器の高効率化および低ひずみ化
本城和彦; 石川亮; 高山洋一郎
Oral presentation, Japanese, 電子情報通信学会技術研究報告,無線電力伝送研究会
Oct. 2011

空間変調無線伝送方式における変調指数向上の検討
斉藤昭; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2011年ソサイエティ大会講演論文集 通信,2011年電子情報通信学会ソサイエティ大会
Sep. 2011

アレーファクタ制御空間変調無線伝送方式の変調指数に関する検討
長谷川光平; 星野有哉; 石川亮; 斉藤昭; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2011年ソサイエティ大会講演論文集 通信,2011年電子情報通信学会ソサイエティ大会
Sep. 2011

1.9GHz帯独立バイアス形InGaP/GaAs HBTカスコード電力増幅器MMIC
高木裕貴; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2011年ソサイエティ大会講演論文集 エレクトロニクス,2011年電子情報通信学会ソサイエティ大会
Sep. 2011

高調波位相制御によるC帯高効率GaN HEMT電力増幅器の実現
神山 仁宏; 石川亮; 本城 和彦
Oral presentation, Japanese, 電子情報通信学会2011年ソサイエティ大会講演論文集 エレクトロニクス,2011年電子情報通信学会ソサイエティ大会
Sep. 2011

HBT増幅器用RCはしご型熱メモリ効果補償回路の解析的パラメータ決定法
石川亮; 木村淳一; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2011年ソサイエティ大会講演論文集 エレクトロニクス,2011年電子情報通信学会ソサイエティ大会
Sep. 2011

高効率低ひずみ独立バイアス形カスコード GaN HEMT増幅器
石川亮; 高山洋一郎; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2011年ソサイエティ大会講演論文集 エレクトロニクス,2011年電子情報通信学会ソサイエティ大会
Sep. 2011

空間変調無線伝送方式の基礎検討
星野有哉; 石川亮; 斉藤昭; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2011年総合大会講演論文集 通信,2011年電子情報通信学会総合大会
Mar. 2011

トランジスタ寄生成分を補償可能とするF・逆F 負荷回路構成法の提案
三浦理; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2011年総合大会講演論文集 エレクトロニクス,2011年電子情報通信学会総合大会
Mar. 2011

独立バイアス形InGaP/GaAs HBTカスコード電力増幅回路の実験的検討
高木祐貴; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2011年総合大会講演論文集 エレクトロニクス,2011年電子情報通信学会総合大会
Mar. 2011

インパルスUWB用送受信MMICの開発
石川亮; 本城和彦
Oral presentation, Japanese, 電気学会研究会資料,電気学会電子回路研究会
22 Nov. 2010

独立バイアス形カスコード電力増幅回路の実験的検証
石川亮; 高山洋一郎; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2010年ソサイエティ大会講演論文集 エレクトロニクス,2010年電子情報通信学会ソサイエティ大会
Sep. 2010

5.8 GHz 小型Ｆ級負荷回路付加GaN HEMT の評価
石川亮; 神山仁宏; 黒田健太; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2010年ソサイエティ大会講演論文集 エレクトロニクス,2010年電子情報通信学会ソサイエティ大会
Sep. 2010

直列接続負荷型GaN HEMTドハティ電力増幅器のひずみ低減手法の提案
河合慧; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,マイクロ波研究会
Sep. 2010

寄生成分を考慮した高次F級負荷回路設計法の提案とGaNHEMT への適用
黒田健太; 石川亮; 本城和彦
Oral presentation, Japanese, 電気学会研究会資料,電気学会電子デバイス研究会
26 Mar. 2010

負性群遅延回路によるUWB用アクティブバランの高性能化
安炅彪; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2010年総合大会講演論文集 エレクトロニクス,2010年電子情報通信学会総合全国大会
17 Mar. 2010

自動バイアス制御型ダイオードリニアライザによる F 級GaN HEMT 電力増幅器のひずみ補償
安藤晃洋; 高山洋一郎; 吉田剛; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2010年総合大会講演論文集 エレクトロニクス,2010年電子情報通信学会総合全国大会
17 Mar. 2010

直列接続型GaN HEMT ドハティ電力増幅器のひずみ特性改善
河合慧; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2010年総合大会講演論文集 エレクトロニクス,2010年電子情報通信学会総合全国大会
17 Mar. 2010

寄生成分補償された5.8 GHz帯F級高効率増幅器
黒田健太; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2010年総合大会講演論文集 エレクトロニクス,2010年電子情報通信学会総合全国大会
17 Mar. 2010

内部高調波処理回路を備えたマイクロ波高出力GaN HEMT
吉田剛; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2010年総合大会講演論文集 エレクトロニクス,2010年電子情報通信学会総合全国大会
17 Mar. 2010

UWB-IR用差動インパルス信号検出ＭＭＩＣの試作・評価
石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2010年総合大会講演論文集 エレクトロニクス,2010年電子情報通信学会総合全国大会
16 Mar. 2010

自動バイアス制御ダイオードリニアライザを用いたF級GaN HEMT電力増幅器のひずみ改善
安藤晃洋; 高山洋一郎; 吉田剛; 石川亮; 本城和彦
Oral presentation, Japanese, 電気学会研究会資料,電気学会電子デバイス研究会
Mar. 2010

Microwave Circuit Design Techniques Interacting Electro-Magnetic Waves, Semiconductor Devices Structures and Thermal Phenomena
Kazuhiko Honjo; Ryo Ishikawa
Public symposium, Japanese, Microwave Workshops & Exhibition (MWE 2009), IEICE, 横浜
Nov. 2009

HBT分布増幅器の群遅延特性に関する解析
石川亮; 安炅彪; 島田雅夫; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2009年ソサイエティ大会講演論文集 エレクトロニクス,2009年電子情報通信学会ソサイエティ大会
01 Sep. 2009

低雑音特性を考慮したUWB用HBT MMIC増幅器の群遅延補償
安炅彪; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2009年ソサイエティ大会講演論文集 エレクトロニクス,電子情報通信学会2009年ソサイエティ大会
01 Sep. 2009

GaN HEMT を用いた直列接続負荷形マイクロ波ドハティ増幅器
河合慧; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2009年ソサイエティ大会講演論文集 エレクトロニクス,2009年電子情報通信学会ソサイエティ大会
Sep. 2009

バイアス独立制御型２ダイオードリニアライザによる F 級GaN HEMT 電力増幅器のひずみ補償
安藤晃洋; 高山洋一郎; 吉田剛; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2009年ソサイエティ大会講演論文集 エレクトロニクス,2009年電子情報通信学会ソサイエティ大会
Sep. 2009

直列接続負荷形GaN HEMTマイクロ波ドハティ電力増幅器の設計・試作
河合慧; 高山洋一郎; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,マイクロ波研究会
Sep. 2009

マイクロ波電力増幅器における熱メモリ効果３次相互変調ひずみの補償法の提案と実験的検証
木村淳一; 石川亮; 高橋幸夫; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,マイクロ波研究会
23 Jun. 2009

UWB用広帯域増幅器の群遅延特性と負の群遅延回路を用いたその補償
安炅彪; 石川亮; 本城和彦
Oral presentation, Japanese, 電気学会研究会資料,電気学会電子デバイス研究会
09 Mar. 2009

RC回路構成を用いた負の群遅延回路
安炅彪; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2009年総合大会講演論文集 エレクトロニクス,2009年電子情報通信学会総合全国大会
04 Mar. 2009

負の群遅延回路を用いたUWB用HBT MMIC増幅器の群遅延補償
安炅彪; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2009年総合大会講演論文集 エレクトロニクス,2009年電子情報通信学会総合全国大会
04 Mar. 2009

UWB用インパルス発生MMICおよび原信号復元回路
石川亮; 呉潤錫; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2009年総合大会講演論文集 エレクトロニクス,2009年電子情報通信学会総合全国大会
04 Mar. 2009

熱メモリ効果に起因したHBT電力増幅器IMD3の補償に関する実験的検証
木村淳一; 石川亮; 高橋幸夫; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2009年総合大会講演論文集 エレクトロニクス,2009年電子情報通信学会総合全国大会
04 Mar. 2009

電磁界・半導体・熱・回路シミュレーションの統合化の現状と展望
本城和彦; 石川亮
Oral presentation, Japanese, 電子情報通信学会2009年総合大会講演論文集 エレクトロニクス,2009年電子情報通信学会総合全国大会
04 Mar. 2009

ダイオードリニアライザによる高効率F級GaN HEMT電力増幅器のひずみ補償
安藤晃洋; 高山洋一郎; 吉田剛; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,マイクロ波研究会
Jan. 2009

４次までの高調波処理を施した集中定数化GaN HEMT 逆Ｆ級増幅器
石川亮; 阿部泰行; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2008年ソサイエティ大会講演論文集 エレクトロニクス,2008年電子情報通信学会ソサイエティ大会
02 Sep. 2008

ダイオードリニアライザによる高効率F級GaN HEMT電力増幅器のひずみ補償
安藤晃洋; 高山洋一郎; 吉田剛; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2008年ソサイエティ大会講演論文集 エレクトロニクス,2008年電子情報通信学会ソサイエティ大会
Sep. 2008

UWB用MMIC増幅器の大信号差動モード評価
石川亮; 本城和彦; 井上博文
Oral presentation, Japanese, 電子情報通信学会研究会資料,シリコンアナログRF研究会
Sep. 2008

集中定数素子高調波処理回路を用いたマイクロ波逆Ｆ級GaN HEMT増幅器
石川亮; 阿部泰行; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,マイクロ波研究会
Aug. 2008

GaN HEMTを用いた5.8 GHz帯F級増幅器の設計・試作
黒田健太; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,マイクロ波研究会
Aug. 2008

High Efficiency Class-F Amplifier at 5.8 GHz Band Using GaN HEMT for Space Solar Power System
Ryo Ishikawa; Kenta Kuroda; Kazuhiko Honjo; Kunio Tsuda; Yasumasa Hisada
Oral presentation, Japanese, Technical report of IEICE
Jul. 2008

A Global Design Technique Including the Interactions between Electromagnetic Waves and Semiconductor Devices in Advanced Microwave Circuits
Kazuhiko Honjo; Ryo Ishikawa
Invited oral presentation, English, NICT, LSJ, IEICE, CIE, etc., International Laser, Light-Wave and Microwave Conference (ILLMC 2008), Yokohama, Japan, International conference
Apr. 2008

GaN HEMTを用いた5.8GHz帯Ｆ級高効率増幅器
黒田健太; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2008年総合大会講演論文集 エレクトロニクス,2008年電子情報通信学会総合全国大会
Mar. 2008

低周波インピーダンス特性制御によるHBT電力増幅器の熱メモリ効果IMD3の非対称性補償
高橋幸夫; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2008年総合大会講演論文集 エレクトロニクス,2008年電子情報通信学会総合全国大会
Mar. 2008

多段RC熱等価回路のマルチセルHBT適用と相互変調ひずみ評価
菅信朗; 高橋幸夫; 石川亮; 高山洋一郎; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2008年総合大会講演論文集 エレクトロニクス,2008年電子情報通信学会総合全国大会
Mar. 2008

Class-F Microwave Amplifier Design Using GaAs-HBT and GaN-HEMT
Kazuhiko Honjo; Ryo Ishikawa; Tsuyoshi Yoshida; Cong Zheng
Invited oral presentation, English, JSAP, International Conference on Solid State Devices and Materials(SSDM2007), Tsukuba, Japan, International conference
Sep. 2007

SSPS用GaN半導体デバイスの試作結果
高田賢治; 津田邦男; 石川亮; 本城和彦; 久田安正
Oral presentation, Japanese, 電子情報通信学会技術研究報告,第17回 宇宙太陽発電時限研究専門委員会研究会
Apr. 2007

電磁界・半導体共シミュレーションによる表面波モード線路増幅モジュールの動作解析
石川亮; 本城和彦; 中嶋政幸
Oral presentation, Japanese, 電気学会研究会資料,電気学会電子デバイス研究会
Mar. 2007

1.9GHz帯GaNHEMT F級増幅器の試作
鄭聡; 吉田剛; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2007年総合大会講演論文集 エレクトロニクス,2007年電子情報通信学会総合全国大会
Mar. 2007

右手/左手系複合回路を用いたUWB用群遅延補償MMICの実験的検証
村瀬健治; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2007年総合大会講演論文集 エレクトロニクス,2007年電子情報通信学会総合全国大会
Mar. 2007

FDTD・デバイス統合解析を用いたGaN HEMTのフィンガー長設計手法
一寸木瑛; 篠原康太; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2007年総合大会講演論文集 エレクトロニクス,2007年電子情報通信学会総合全国大会
Mar. 2007

UWB用超低消費電力InGaP/GaAs HBT MMIC 増幅器
安部卓哉; 島田雅夫; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2007年総合大会講演論文集 エレクトロニクス,2007年電子情報通信学会総合全国大会
Mar. 2007

電磁界解析・半導体デバイス解析連動による能動モジュール実動作解析
石川亮; 本城和彦; 中嶋政幸
Oral presentation, Japanese, 電子情報通信学会2007年総合大会講演論文集 エレクトロニクス,2007年電子情報通信学会総合全国大会
Mar. 2007

任意次数まで処理可能な逆F級増幅器用高調波処理回路の提案
石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2007年総合大会講演論文集 エレクトロニクス,2007年電子情報通信学会総合全国大会
Mar. 2007

FDTD法を用いた電磁界・半導体共シミュレーションによる長フィンガーHBTの解析および実験的検証
篠原康太; 石川 亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,マイクロ波研究会
Sep. 2006

右手/左手系複合回路を用いたUWB用MMIC増幅器の群遅延補償
村瀬健治; 石川 亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,マイクロ波研究会
Sep. 2006

電力増幅器における自己発熱現象およびそれに伴う歪み発生の多段RC熱等価回路によるモデル化
高橋幸夫; 石川 亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,マイクロ波研究会
Sep. 2006

右手／左手系複合回路を利用したUWB用デバイス群遅延補償の一検討
村瀬健治; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2006年総合大会講演論文集 エレクトロニクス,2006年電子情報通信学会総合全国大会
Mar. 2006

多段ＣＲ熱等価回路による高出力HBTの相互変調歪解析
高橋幸夫; 石川亮; 木村功一; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2006年総合大会講演論文集 エレクトロニクス,2006年電子情報通信学会総合全国大会
Mar. 2006

FDTD法を用いた長フィンガーHBT構造の動作解析
篠原康太; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2006年総合大会講演論文集 エレクトロニクス,2006年電子情報通信学会総合全国大会
Mar. 2006

逆傾斜へテロ接合コレクタ構造によるHBTコレクタ容量の線形化と３次相互変調歪みの最小化条件の導出
鄭聡; 石川亮; 本城和彦
Oral presentation, Japanese, 電気学会研究会資料,電気学会電子デバイス研究会
Mar. 2006

マイクロ波工学の超高周波・高密度実装技術への展開
本城和彦; 石川亮
Oral presentation, Japanese, エレクトロニクス実装学会,第20回エレクトロニクス実装学会講演大会
Mar. 2006

BGAパッケージにおけるGHz高速信号解析方法の提案
井上博文; 大島大輔; 古谷充; 堺淳; 本城和彦; 石川亮
Oral presentation, Japanese, エレクトロニクス実装学会,第20回エレクトロニクス実装学会講演大会
Mar. 2006

アクティブバランを付加したUWB自己補対アンテナ駆動用InGaP/GaAs HBT増幅器
中川到; 島田雅夫; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会技術研究報告,マイクロ波研究会
Sep. 2005

UWB自己補対アンテナ駆動用アクティブバラン付超広帯域InGaP/GaAs HBT-MMIC増幅器
中川到; 島田雅夫; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2005ソサイエティ大会,電子情報通信学会2005ソサイエティ大会
Sep. 2005

UWB用アクティブバラン付MMIC増幅器、フィルタ、自己補対アンテナの群遅延特性
安キョンピョ; 斉藤昭; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2005ソサイエティ大会,電子情報通信学会2005ソサイエティ大会
Sep. 2005

高密度実装におけるOSE法簡易高精度モデリングおよびその応用
石川亮; 本城和彦; 今井規夫; 井上博文
Oral presentation, Japanese, 電子情報通信学会2005ソサイエティ大会,電子情報通信学会2005ソサイエティ大会
Sep. 2005

OSE法における高密度配線基板内のビア・線路間容量が伝送特性へ与える影響
石川亮; 本城和彦; 今井規夫; 井上博文
Oral presentation, Japanese, 電子情報通信学会2005ソサイエティ大会,電子情報通信学会2005ソサイエティ大会
Sep. 2005

InGaP/GaAs HBT F級増幅器の処理高調波次数と効率の関係
関正人; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2005年総合大会講演論文集 エレクトロニクス
Mar. 2005

逆傾斜へテロ接合コレクタ構造によるHBTの３次相互変調ひずみ特性の改善
鄭聡; 石川亮; 本城和彦
Oral presentation, Japanese, 電子情報通信学会2005年総合大会講演論文集 エレクトロニクス
Mar. 2005

Experimental Observation of Energy Modulation of Electrons with Optical Near-Fields
ベイジョンソク; 石川亮; 水野皓司
Oral presentation, Japanese, 電子情報通信学会2004年総合大会講演論文集 エレクトロニクス
Mar. 2004

ミリ波パッシブイメージング装置の受信回路の研究
田中輝一; 的野春樹; 石川亮; 我妻壽彦; 水野皓司
Oral presentation, Japanese, 電子情報通信学会技術研究報告
Sep. 2003

ミリ波帯パッシブ・イメージングによる生体等の計測
鈴木悠祐; 我妻壽彦; ジョンミンギュウ; 石川亮; 古川直光; 水野皓司
Oral presentation, Japanese, 第３回マイクロ波効果・応用シンポジウム講演要旨集
Sep. 2003

多段微小間隙回路を用いた近接場と電子ビームとの相互作用に関する研究
石川亮; ベイジョンソク; 水野皓司
Oral presentation, Japanese, 第50回応用物理学関係連合講演会講演予稿集No3
Mar. 2003

微小間隙回路を用いたCO2レーザによる電子ビームのエネルギー変調
石川亮; ベイジョンソク; 水野皓司
Oral presentation, Japanese, 電子情報通信学会技術研究報告
Dec. 2002

Experimental verification of the theory on energy modulation of an electrion beam with an infrared near-field
石川亮; ベイジョンソク; 水野皓司
Oral presentation, Japanese, 近接場光学研究グループ 第１１回研究討論会 予稿集,近接場光学研究グループ 第１１回研究討論会
Jun. 2002

微小スリットを用いたレーザ光と電子ビームとの相互作用に関する研究
石川亮; ベイジョンソク; 水野皓司
Oral presentation, Japanese, 第56回応用物理学会東北支部学術講演会講演予稿集
Dec. 2001

電子ビームを用いた光近接場計測法の基礎的研究
ベイジョンソク; 石川亮; 水野皓司
Oral presentation, Japanese, 電子情報通信学会2001年総合大会講演論文集エレクトロニクス1
Mar. 2001

微小スリットを用いた赤外光による電子エネルギー変調
石川亮; ベイジョンソク; 水野皓司
Oral presentation, Japanese, 電子情報通信学会技術研究報告
Dec. 2000

光近接場による電子ビームのエネルギー変調
石川亮; ベイジョンソク; 水野皓司
Oral presentation, Japanese, 第47回応用物理学関係連合講演会講演予稿集No3
Mar. 2000

CO2レーザー光と電子との相互作用の実験的観測
石川亮; ベイジョンソク; 水野皓司
Oral presentation, Japanese, 第54回応用物理学会東北支部学術講演会講演予稿集
Dec. 1999

金属スリット回路を用いたCO2レーザ光による電子ビームのエネルギー変調
石川亮; ベイジョンソク; 水野皓司
Oral presentation, Japanese, 電子情報通信学会技術研究報告
Dec. 1999

光波帯近接場と電子との相互作用の基礎的研究
石川亮; ベイジョンソク; 水野皓司
Oral presentation, Japanese, 第58回応用物理学会学術講演会講演予稿集No3
Oct. 1997

極微小金属スリットを用いた光子ー電子相互作用の基礎的研究
ベイジョンソク; 宮嶋幹; 岡元達哉; 石川亮; 水野皓司
Oral presentation, Japanese, 第44回応用物理学会関係連合講演会講演予稿集No3
Mar. 1997

極微小金属スリットを用いた光波帯近接場と電子との相互作用
ベイジョンソク; 岡元達哉; 石川亮; 水野皓司
Oral presentation, Japanese, 電子情報通信学会技術研究報告
Dec. 1996

電気回路学および演習（K過程）
2022 - Present
電気通信大学

情報通信工学実験／電子情報学実験A
2018 - Present
The University of Electro-Communications

集積回路設計特論
2017 - Present
The University of Electro-Communications

集積回路学
2017 - Present
電気通信大学

基礎演習Ａ（Ｉエリア）
2017 - Present
The University of Electro-Communications

基礎電気回路（Ｉエリア）
2017 - Present
The University of Electro-Communications

電子工学工房
2010 - Present
電気通信大学

情報通信システム／電子情報システム実験第一
2012 - 2017
The University of Electro-Communications

電気回路学および演習（夜間主）
2014 - 2016
電気通信大学

基礎科学実験Ａ
2010 - 2015
電気通信大学

The Japan Society of Applied Physics

The Institute of Electronics, Information and Communication Engineers

The Institute of Electrical and Electronics Engineers (IEEE)

次世代無線通信用信号を高効率増幅する複合動作高周波電力増幅器構成の開発
石川 亮
日本学術振興会, 科学研究費助成事業, 電気通信大学, 基盤研究(C), 24K07604
01 Apr. 2024 - 31 Mar. 2027

「令和5年度補正宇宙開発利用推進研究開発(月面におけるエネルギー関連技術開 発(無線送電開発))事業」に係る地球低軌道からの送電技術実証実験に向けた機 器等の開発・検討に関する再委託
石川亮
(一財)宇宙システム開発利用推進機構(経済産業省再委託), Principal investigator
Apr. 2024 - Mar. 2025

「令和5年度宇宙太陽光発電における無線送受電技術高効率化等研究開発事業」に 係る送電部の高効率化の技術評価(その2)
石川亮
(一財)宇宙システム開発利用推進機構(経済産業省再委託), 「令和5年度宇宙太陽光発電における無線送受電技術高効率化等研究開発事業」に 係る送電部の高効率化の技術評価(その2), Principal investigator
Apr. 2024 - Mar. 2025

「令和４年度宇宙開発利用推進研究開発（月面におけるエネルギー関連技術開発（無線送電開発））事業」に係る地球低軌道からの送電技術実証実験に向けた機器等の開発・検討(その２)
石川 亮
一般財団法人宇宙システム開発利用推進機構（経済産業省再委託）, Principal investigator
Apr. 2023 - Mar. 2024

「令和5年度宇宙太陽光発電における無線送受電技術高効率化等研究開発事業」に係る送電部の高効率化の技術評価
石川 亮
一般財団法人宇宙システム開発利用推進機構（経済産業省再委託）
Apr. 2023 - Mar. 2024

超多元接続無線ネットワーク向けリコンフィギャラブルＯＡＭ空間多重アンテナ技術の研究開発
石川 亮
総務省, Principal investigator, Funded commissioned research
Jun. 2022 - Mar. 2024

災害時フレキシブル無線電力伝送用受電デバイスの研究開発
石川 亮
日本学術振興会, 科学研究費助成事業 基盤研究(C), 電気通信大学, 基盤研究(C), 本研究は、頻発化・激甚化する自然災害に伴う電力供給の寸断に対して、それを補う技術として期待されるマイクロ波無線電力伝送技術に関し、マイクロ波電力を直流電力に変換するために用いられる整流器の共通課題である電力変換効率の入力電力変動による大幅な効率低下を解決すべく、電力供給量に応じて能動的に変換効率の最適化を行う新たな構成を有する高効率整流器デバイス開発を目指すものである。 研究２年目である今年度は、初年度に実施した、GaAs HEMT素子の整流動作に最適化させた大信号モデルを構築するための問題点の洗い出しの結果を踏まえ、既存の高周波増幅器用のトランジスタ大信号モデルをベースに、新たに高出力動作が可能なGaN HEMT素子に対して整流動作用大信号トランジスタモデル構築を実施した。低電力高周波入力時の動作を再現するために重要となる直流電流・電圧特性の原点付近の特性の再現性と、入力電力増加時の特性の再現性との両立を、既存の非線形電流源モデルを非線形抵抗モデルに変換しつつ簡単な関数を追加することで実現し、また、増幅動作時用のトランジスタモデルでは含まれていなかったゲート・ドレイン間順方向ダイオード電流成分を追加することで、高入力時に効率が急激に低下する現象を再現することができた。以上より構築した大信号モデルを用いて実際に整流器を設計・試作し、2.35 GHzにおいて、高周波入力電力22 dBm、ゲートバイアス電圧-3 V の条件に対して82%の高い高周波/直流電力変換効率を達成し、さらに、ゲート電圧を-2.5Vから-3.5Vの範囲で調整することで、7 dBmから30 dBmの高周波入力電力範囲で60%以上の高周波/直流電力変換効率を得た。, 20K04594
01 Apr. 2020 - 31 Mar. 2023

「令和４年度宇宙開発利用推進研究開発（月面におけるエネルギー関連技術開発（無線送電開発））事業」に係る地球低軌道からの送電技術実証実験に向けた機器等の開発・検討
石川 亮
一般財団法人宇宙システム開発利用推進機構（経済産業省再委託）, Principal investigator
Jan. 2023 - Mar. 2023

「令和4年度宇宙太陽光発電における無線送受電技術高効率化等研究開発事業」に係る送電部の高効率化の技術評価
石川 亮
一般財団法人宇宙システム開発利用推進機構（経済産業省再委託）, Principal investigator
Apr. 2022 - Mar. 2023

SSFETレクテナと圧電トランスの融合によるRFEH技術の実用
石橋孝一郎
科学技術振興機構（JST）, Coinvestigator, Funded commissioned research
2020 - 2023

パーソナルエリア高速大容量無線通信・無線電力伝送モジュールの研究開発
石川 亮
総務省, Principal investigator
2019 - 2020

Super SteepトランジスタとMeta MaterialアンテナによるnW級環境RF発電技術の創出
石橋孝一郎
科学技術振興機構（JST）, Coinvestigator, Funded commissioned research
2016 - 2019

ループアンテナアレイを用いた軌道角運動量超多重通信方式の研究
石川 亮
総務省, Principal investigator
2017 - 2018

Development of multi-harmonic impedance optimaization system for ultra-high-efficiency microwave power amplifier and rectifier
Ishikawa Ryo
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), The University of Electro-Communications, Grant-in-Aid for Scientific Research (C), A practical design method of ultra-high-efficiency microwave power amplifier (DC-to-RF converter) and rectifier (RF-to-DC converter) has been established for recent wireless communication or wireless power transfer systems. First, an optimal impedance (terminal condition) estimation system for the intrinsic part of a transistor was reconstructed to improve accuracy and to apply to high-power devices. Then, a circuit design procedure considering nonlinear parasitic elements in the transistor was contrived to estimate an optimal impedance condition for a load circuit. As verifications, GaAs pHEMT and GaN HEMT microwave power amplifiers and rectifiers were fabricated based on the proposed design method at several operation frequencies, which exhibited high-efficiency performances of from 70 to 80%., 25420323
01 Apr. 2013 - 31 Mar. 2016

Research on multi-functional antennas embedded with lumped elements
SAITOU Akira; HONJO Kazuhiko; TAKAYA Yoichiro; ISHIKAWA Ryo
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), The University of Electro-Communications, Grant-in-Aid for Scientific Research (C), An analytical model for multi-band antennas, realized with embedded lumped elements, has been derived. With the obtained formulae, an accurate design method to develop multi-band antennas for arbitrary bands over a short term is clarified. With the method, dual-band antennas for 2.5/5 GHz bands and 0.86/2 GHz band have been developed. In addition, frequency reconfigurable dual-band antennas are demonstrated. Furthermore, to design radiation patterns, the mode-transfer behavior in the frequency range was analyzed. With the analysis, antennas appropriate for MIMO applications were designed and fabricated. Under the favor of the designed unidirectional patterns, correlation coefficients in 2.5 and 5 GHz bands were shown to be reduced. The reduction is expected to improve the data transmission rate by 2 bit/Hz., 24560444
01 Apr. 2012 - 31 Mar. 2015

Microwave Modeling of Single Electron Transistor
HONJO Kazuhiko; ISHIKAWA Ryo
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), The University of Electro-Communications, Grant-in-Aid for Scientific Research (C), A novel approach for investigating the single-electron transistors (SETs) power gain functionality which is one of the most important features of active devices related with operation speed performance is proposed. Moreover, an evaluating method is also introduced to improve the SET power gain due to the influence of junction thickness. It is found that source junction thickness is the key factor affecting the power gain. This important finding is illustrated by taking into account the physical parameters of sample fabricated SET. According to proposed model, power gain can be improved by ramarkable amount of 39dB at frequencies up to THz regime by reducing 1.25nm in source junction thickness., 23560389
2011 - 2013

A study of high-efficiency low-distortion cascode power amplifiers
TAKAYAMA Yoichiro; ISHIKAWA Ryo; HONJO Kazuhiko
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), The University of Electro-Communications, Grant-in-Aid for Scientific Research (C), We proposed a new cascode circuit with independently biased transistors, which makes possible stable dc operation and independent setting of transistor operating modes. In consequence, the circuit can realize high-efficiency and low-distortion power amplifier. Microwave power amplifiers with the proposed configuration consisting of GaN HEMTs was first designed and fabricated. Also, 2 GHz-band power amplifier MMICs using InGaP/GaAs HBTs and GaAs pHEMTs were tried. These amplifiers realized high-efficiency and low-distortion performances, as expected., 22560321
2010 - 2012

Improvements in group delay characteristics based on the w-analysis of electro-magnetic waves and semianductonr devices
HONJO Kazuhiko; ISHIKAWA Ryo
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), The University of Electro-Communications, Grant-in-Aid for Scientific Research (C), Suppression of the group delay dispersions for RF components is one of the most important issues for realizations of UWB (Ultra Wide Band) radio system. For that purpose, as the first step, a co-simulation technique between the Maxwell's equations and the semiconductor device equations has been developed based on the FDTD method. Using the method, a 60 GHz amplifier module consisting of PDTL(Planar Dielectric Transmission line) waveguides and a HEMT device has been co-simulated as the first trial, where crystal structures for the compound semiconductor material and the millimeter-wave waveguides were simultaneously analyzed. Simulated results and measured results for the module were in good agreements. Thus the method has been successfully applied to the microwave characteristics analysis of long finger structures for InGaP/GaAs HBT's and A1GaN/GaN HEMT's. As the second step, the group delay generation origin was investigated in a viewpoint of the circuit technology, including both lumped element circuits and distributed circuits. The second step delivered a successful realization of fully distributed circuit switch MMIC with low group delay dispersion& Also a novel group delay compensation circuit topology based on the composite right hand/left band concept was realized. Also the minimum sized broadband planar self-complementary antenna was realized. As the final step, both an InGaP/GaAs HBT ultrabroad band amplifier with an active balun and a group delay compensation MMIC were designed, fabricated and tested. It has been demonstrated that the amplifier group delay was successfully suppressed. The MMIC can be used as a driver amplifier far UWB self-complementary antennas., 18560329
2006 - 2007

Study on a power combiner using an oversized-waveguide resonator at short millimeter wavelengths.
BAE Jongsuck; KIMURA Takashi; ODA Akinori; ISHIKAWA Ryo
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Nagoya Institute of Technology, Grant-in-Aid for Scientific Research (B), This research project has been planed to develop a high power solid-state oscillator operating at short-millimeter wave frequencies utilizing a spatial power combining technique. For this purpose, an oversized (overmoded) -waveguide harmonic oscillator which incorporates an array of TE_<10> mode waveguides containing solid state devices into the resonator, have been used for an efficient power combining of harmonic-mode devices. In the overmoded-waveguide resonator, solid state devices, in our case Gunn diodes, oscillate at the fundamental frequency in phase and then generate the second harmonic waves. The harmonic waves from a number of the diodes are combined coherently and spatially in the same resonator, so that higher power can be attained even at high frequencies above 90 GHz. The theoretical and experimental results are as follows, 1.Coherent power combining of fifteen Gunn diodes has been demonstrated for the first time at the harmonic frequencies between 89GHz and 99 GHz. 2.A power combining efficiency of about 67% and an output power of 0.25 W (continuous wave) at 94 GHz band has been achieved with a 5x3 waveguide Gunn diode array. These results indicate that the overmoded waveguide resonator for spatial power combining of harmonic-mode devices is very useful for producing intense short-millimeter waves. 3.In order to design the resonator, the equivalent circuit for the overmoded waveguide harmonic oscillator has been developed theoretically and verified experimentally. 4.Effectiveness of a lamellar back short which can tune the resonator at both the fundamental and the second harmonic frequencies has been confirmed. 5.It has been found that the power combining efficiency has been determined mainly by uniformity of rf-characteristics of the diodes., 15360180
2003 - 2005

半導体中の光励起プラズマを利用した周波数アップコンバータの研究
べい 鐘石; 小田 昭紀; 木村 高志; 石川 亮; 莅戸 立夫
日本学術振興会, 科学研究費助成事業 萌芽研究, 萌芽研究, 本年度は、光励起半導体プラズマを用いたドップラーシフト型周波数変換法を検証するため、その理論および実験準備を引き続き進めた。 1 理論解析を通して次の知見を得た。(1)光遅延回路は、装量製作および遅延時間調整の容易さから、長さの異なる光ファイバーをアレイ状に配列した回路が、最初の実験的検証に適している。(2)周波数変換された高い周波数成分の波に対する伝搬損失を減らし、その検出を容易にするためには、プレーナー型の高周波線路ではなく、シリコン半導体が装荷されたリッジ導波管が周波数変換用伝送線路として優れている。 2 周波数変換回路の設計を終了した。(1)入力周波数を10GHzから20GHz、周波数増倍率5、出力周波数50GHzから100GHzと設定して回路設計を行い、リッジ導波管の入出力回路を含めた各寸法を、高周波シミュレータを用いて設計した。(2)シリコンをリッジ導波管に装着する方法について検討した結果、予想以上にシリコン部での高周波損失が大きい事が分かった。そこで、光ファィバーに直結したシリコンチップをアレイ化して、リッジ導波管に装荷する方式を用いる事とし、チップ寸法(125μm×250μm)、装着周期3mmを、周波数変換に関するシミュレーションを通して決定した。 3 高速検出回路の設計と製作を終了した。出力取り出し部について検討し、高い振幅を持つ入力周波数球分を十分に除去し、周波数増倍された比較的低い振幅を持ち短パルス化された出力波を検出するため、周波数変換器出力部に入力周波数より高いガットオフ特性を持つ矩形導波管を接続して用いる高速ショットキ・ダイオード検出回路を製作した。これにより、パルス幅20psecのミリ波出力信号を検出可能となった。 4 設計した変換回路は、現在製作中である。 変換器の製作が完了しだい、その特性評価を行い、最初の周波数変換実験を行う予定である。, 14655128
2002 - 2003

レーザ光による電子ビームの量子論的エネルギー変調の実験的検証
石川 亮
日本学術振興会, 科学研究費助成事業 若手研究(B), 若手研究(B), 本研究は、微小間隙相互作用回路を用いた光と電子ビームとの相互作用を理論及び実験的に明らかにし、光領域で動作する新たな小型電子ビーム装置開発のための基本特性を得ることを目的としている。 本年度は、先ず、波長1ミクロン帯の実験に用いる微小間隙相互作用回路の製作を行った。 電子ビームガイド用の溝をシリコンの異方性エッチングにより形成し、集束イオンビームを用いてシリコン表面上に幅1ミクロン以下の微小間隙を作製した。また、電子ビーム、レーザ光、微小間隙回路のアライメントを真空中で行うための高精度マニピュレータを設計し、製作した。 一方、FDTD法を用いた間隙上の電磁界解析、及び電子ビームとのエネルギー授受の理論解析を推し進め、間隙を多段化した場合に、僅か数本程度で周期構造として電磁界分布の解析を簡略化することが可能であることが確認された。(5本で一次ピーク値の誤差が5%程度)また、スリット溝、スロット溝、V溝、矩形溝、等々の種々の形状について幅や溝深さを変化させて解析を行い、矩形溝を用いた場合に他と比較して倍程度のエネルギー授受が得られることが確認された。 以上の解析結果を基に、矩形の回折格子を作製し、波長10.6ミクロンの炭酸ガスレーザを用いて相互作用実験(逆スミス・パーセル効果)を行い、場との同期条件を満たす電子速度で現れる3次までのエネルギー授受量のピークを実験的に確認した。これは現段階における最短波長での逆スミス・パーセル効果の実験結果である。, 14750249
2002 - 2003

ループアンテナ送受信システム及びループアンテナ装置
Patent right, 吉田剛, 北山観行, 斉藤昭, 本城和彦, 石川亮, 特願2023-192000, Date applied: 10 Nov. 2023

ループアンテナの給電装置
Patent right, 大塚啓人, 斉藤昭, 本城和彦, 石川亮, 特願2018-158123, Date applied: 27 Aug. 2018, 特許第7161750号, Date registered: 19 Oct. 2022

無線通信装置及びアンテナ装置
Patent right, 斉藤昭, 大塚啓人, 本城和彦, 石川亮, 特願2017-102931, PCT/JP2018/017420, Date applied: 24 May 2017, 特許第7006961号, Date issued: 11 Jan. 2022

アレイアンテナおよび無線通信システム
Patent right, 斉藤昭, 本城和彦, 石川亮, 鈴木博, 特願2018-034522, Date applied: 28 Feb. 2018, 特許第6987385号, Date issued: 03 Dec. 2021

無線通信装置及びアンテナ装置
Patent right, 斉藤昭, 本城和彦, 石川亮, 大塚啓人, 特願2016-087008, PCT/JP2017/016153, Date applied: 25 Apr. 2016, WO2017/188172, Date announced: 02 Nov. 2017, 特許第6858982号, US10,938,119B2, Date issued: 29 Mar. 2021

無線電力伝送システム及びアンテナ装置
Patent right, 和田渉, 斉藤昭, 本城和彦, 石川亮, 特願2020-198025, Date applied: 30 Nov. 2020

アンテナシステムおよびアンテナ
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電力伝送装置
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トランジスタ最適負荷特性測定装置およびトランジスタ最適負荷特性測定方法
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高効率電力増幅器
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歪補償回路
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高調波処理回路及びこれを用いた増幅回路
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無線通信・給電を一体化 電通大、6G向け新技術 OAM波活用
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軌道角運動量多重化ループアレイアンテナの開発に成功（同一周波数・時間・空間領域でエ ラーフリー多重通信実現）
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