Jun NAKAMURA
| Department of Engineering Science | Professor |
| Cluster III (Fundamental Science and Engineering) | Professor |
| Nanotribology Research Center | Professor |
- Profile:
Subject: Nano-scale Science and Technology
(1) Structural stability and electronic states of nano-scale materials
(2) Materials design by computer simulation
(3) Applications of theoretical solid state physics to design nano-scale materials and devices, specifically, first-principles evaluations of magnetic properties, optical properties, dielectric properties, and transport properties
(4) Quantum effects and their application to nano-scale devices
(5) Development of an original first-principles simulation system
(6) Development of evaluation techniques for nano-scale materials
(7) Atomic-scale mechanism of friction
(8) Spin coupling in double quantum dots
(9) Surface science and crystal growth
Researcher Information
Research Keyword
- catalysis
- First-principles calculations
- Surface structure of solids
- Electronic properties in general
- Thin films
- Crystal structure in general;crystallography
- Dielectric properties and materials
- Magnetic properties and materials
- Methods of structure determination; diffraction crystallography
- Crystal growth
- Electronic structure
- 固体の表面構造
- 電子物性一般
- 薄膜
- 結晶構造一般；結晶学
- 誘電体
- 磁性
- 構造決定法；回折結晶学
- 結晶成長
- 電子構造
Field Of Study
Career
- 01 Apr. 2012
電気通信大学大学院情報理工学研究科先進理工学専攻, 教授 - 01 Apr. 2007 - 31 Mar. 2012
電気通信大学電気通信学部電子工学科, 准教授 - 01 Apr. 2008 - 30 Sep. 2008
東京大学物性研究所客員部門, 准教授 - 01 Apr. 2006 - 31 Mar. 2007
電気通信大学電気通信学部電子工学科, 助教授 - Mar. 2001 - 31 Mar. 2006
電気通信大学電気通信学部電子工学科, 助手 - Apr. 1998 - Feb. 2001
理化学研究所, 基礎科学特別研究員 - Jun. 1997 - Mar. 1998
早稲田大学材料技術研究所, 専任客員講師 - Apr. 1997 - May 1997
日本学術振興会, 特別研究員（PD） - Apr. 1995 - Mar. 1997
早稲田大学理工学部, 助手
Educational Background
Member History
- Apr. 2024 - Present
常務理事, 日本表面真空学会, Society - May 2022 - Present
ジェンダー委員会委員, 日本工学アカデミー, Society - Apr. 2022 - Present
協議員会委員, 日本表面真空学会, Society - Mar. 2022 - Present
人材育成・教育企画委員会委員, 応用物理学会, Society - Jan. 2018 - Apr. 2024
委員, 日本表面真空学会「表面と真空」編集委員会, Society - Apr. 2022 - Mar. 2023
論文賞委員会委員, 日本物理学会, Society - Mar. 2013 - Mar. 2022
会員サービス委員会, 応用物理学会, Society - 2008 - 31 Dec. 2017
表面科学編集委員, 表面科学会, Society - Apr. 2017
JJAP/APEX編集運営委員会 編集運営委員, 応用物理学会 JJAP/APEX編集運営委員会, Society - Mar. 2016 - Mar. 2017
応用物理学会 論文誌・企画編集委員会 副委員長, 応用物理学会 論文誌・企画編集委員会, Society - Mar. 2015 - Mar. 2017
Executive Editor, IoPP JJAP/APEX Editorial Board, Others - Mar. 2015 - Mar. 2017
JJAP/APEX編集運営委員会 副委員長, 応用物理学会 JJAP/APEX編集運営委員会, Society - Apr. 2015 - Mar. 2016
代議員推薦委員会委員, 応用物理学会, Society - Apr. 2015 - Mar. 2016
運営委員, 男女共同参画学協会連絡会, Society - Mar. 2014 - Mar. 2016
応用物理学会 男女共同参画委員会 委員, 応用物理学会 男女共同参画委員会, Society - 20 Feb. 2015 - 19 Feb. 2016
第５４期 諮問委員, 応用物理学会 諮問委員会, Society - Mar. 2014 - Mar. 2015
常務理事, 応用物理学会, Society - Mar. 2014 - Mar. 2015
会員サービス委員会委員長, 応用物理学会, Society - 2013 - Mar. 2015
代議員, 応用物理学会, Society - Mar. 2013 - Mar. 2014
会員サービス委員会副委員長, 応用物理学会, Society - Mar. 2013 - Mar. 2014
理事, 応用物理学会, Society - Mar. 2010 - Mar. 2011
代議員選考委員会委員, 応用物理学会, Society - 2007 - 2011
講演大会運営委員会委員, 表面科学会, Society - Oct. 2008 - Mar. 2010
アカデミックロードマップ人材育成クラスターWG委員, 応用物理学会, Society - Mar. 2008 - Mar. 2010
人材育成・男女共同参画委員会副委員長, 応用物理学会, Society - 2006 - 2009
代議員, 応用物理学会, Society - Nov. 2008
タスクフォース委員会, 応用物理学会, Society - Apr. 2007 - Mar. 2008
人材育成・男女共同参画委員会幹事長, 応用物理学会, Society - 2006 - 2008
日本物理学会誌新著紹介小委員会委員, 日本物理学会, Society - Apr. 2007 - Aug. 2007
暮らしを支える科学と技術展企画実行WG, 応用物理学会, Society - Apr. 2007
将来ビジョン・ロードマップワーキンググループ委員, 応用物理学会, Society - Feb. 2006 - Mar. 2007
人材育成・男女共同参画委員会副幹事長, 応用物理学会, Society - 2005 - 2007
プログラム編集委員, 日本物理学会, Society - 2003 - Mar. 2006
男女共同参画委員会委員, 応用物理学会, Society - 2005 - 2006
領域９世話人, 日本物理学会, Society - 2006
講演奨励賞審査委員, 応用物理学会, Society - 2005
親子の科学実験教室ワーキンググループ委員, 応用物理学会, Society - 2002
学会奨励賞審査委員, 表面科学会, Society - 2002
Physical Review / Physical Review Letters, permanent referee, Society
Research Activity Information
Award
- Oct. 2023
American Vacuum Society, 学生が第一著者の講演の中で優れた内容のものについて、旅費の支援（$250）をする賞。
AVS Dorothy M. and Earl S. Hoffman Travel Grant, Akira Sumiyoshi;Jun Nakamura
International society, United States - Dec. 2021
USA
ACS Appl. Energy. Mat. Cover art, Hiroshi Yabu;Koki Nakamura;Yasutaka Matsuo;Yutaro Umejima;Haruyuki Matsuyama;Jun Nakamura;Koju Ito
Official journal, United States - Jul. 2020
Marquis Who's Who
USA
Marquis Who's Who in the World and Marquis Who's Who in America
Others, United States - Oct. 2019
AVS
USA
AVS Dorothy M. and Earl S. Hoffman Travel Grant, Takayuki Suga;Jun Nakamura
International society, United States - Jul. 2019
Marquis Who's Who
USA
Marquis Who's Who in the World and Marquis Who's Who in America
Others, United States - May 2019
Papantla市議会, Mexico合衆国Veracruz州Papantla市で開催された、Mexico物理学会固体物理学会学術講演会において基調講演を行ったことに対する表彰。
Mexico
Reconocimiento, Jun Nakamura
Others - Oct. 2018
ＡVS
USA
AVS Dorothy M. and Earl S. Hoffman Travel Grant, Shunji Goto;Jun Nakamura
International society, United States - Oct. 2018
AVS
USA
AVS Dorothy M. and Earl S. Hoffman Travel Grant, Yosuke Kikuchi;Jun Nakamura
International society, United States - Aug. 2018
Marquis Who's Who
USA
Marquis Who's Who in the World and Marquis Who's Who in America
Others, United States - Mar. 2018
応用物理学会
Japan
APEX/JJAP Editorial Contribution Award, Jun Nakamura
Official journal, Japan - Nov. 2017
Graduate Student Sessionm Best presentation Award, Rifan Agustian;Akira Akaishi;Jun Nakamura
International society - Aug. 2017
Marquis Who's Who
USA
Marquis Who's Who in the World and Marquis Who's Who in America
Others, United States - Jun. 2017
Germany
The best presentation awards, 2nd place (SPM-5, The 5th International Workshop on Solution Plasma and Molecular Technologies), Rifan Agustian;Akira Akaishi;Jun Nakamura
International society, Germany - Aug. 2015
Marquis Who's Who
USA
Marquis Who's Who in the World and Marquis Who's Who in America
United States - Apr. 2015
応用物理学会
APEX/JJAP Editorial Contribution Award, Jun Nakamura
Official journal, Japan - Mar. 2015
応用物理学会
応用物理学会感謝状, 中村淳
Others, Japan - Aug. 2014
Marquis Who's Who
USA
Marquis Who's Who in the World and Marquis Who's Who in America
United States - Aug. 2013
Marquis Who's Who
USA
Marquis Who's Who in the World and Marquis Who's Who in America
United States - Mar. 2013
永井科学技術財団
第３０回財団賞・研究奨励金・共同研究奨励金
Publisher - Aug. 2012
Marquis Who's Who
USA
Marquis Who's Who in the World and Marquis Who's Who in America
United States - Feb. 2012
日本表面科学会
日本表面科学会講演奨励賞 - Aug. 2011
Marquis Who's Who
USA
Marquis Who's Who in the World and Marquis Who's Who in America
United States - Feb. 2011
電気通信大学
平成２２年度電気通信大学優秀教員賞 - Aug. 2010
Marquis Who's Who
USA
Marquis Who's Who in the World and Marquis Who's Who in America
United States - Jan. 2010
American Vacuum Society
USA
Young Scientist Awards
United States - Nov. 2009
Marquis Who's Who
USA
Marquis Who's Who in the World and Marquis Who's Who in America
United States - Jan. 2009
American Vacuum Society
USA
Young Scientist Awards
United States - Nov. 2008
応用物理学会
講演奨励賞 - Nov. 2008
Marquis Who's Who
USA
Marquis Who's Who in the World and Marquis Who's Who in America
United States - Jan. 2008
35th Conference on the Physics and Chemistry of Semiconductor Interfaces
USA
Young Scientist Awards
United States - Nov. 2007
Marquis Who's Who
USA
25th Silver Anniversary Edtion of Marquis Who's Who in the World
United States - Jan. 2006
33rd Conference on the Physics and Chemistry of Semiconductor Interfaces
USA
Young Scientist Awards
United States - Dec. 2000
日本MRS奨励賞 - Apr. 1994
早稲田大学
早稲田大学大隈記念奨学生 - Apr. 1993
早稲田大学
早稲田大学大隈記念奨学生
Paper
- Investigating the Potency of Boron Doping on Graphene Nanoclusters as Catalysts for CO Reduction Reaction
Arikasuci Fitonna Ridassepri; Yutaro Umejima; Shota Sato; I. Gusti Made Sanjaya; Nur Hayati; Samik Samik; Jun Nakamura
Last, ChemistrySelect, 10, e00613-1-e00613-6, Jul. 2025, Peer-reviwed
Scientific journal, English - Visualization of the local dipole moment at the Si(111) surface using DFT calculations
Akira Sumiyoshi; Kohei Yamasue; Yasuo Cho; Jun Nakamura
Last, Scientific Reports, 15, 7436, 03 Mar. 2025, Peer-reviwed
Scientific journal - B-Doped Fullerene as a Potential Metal-Free Catalyst Material for CO Reduction Reaction
Arikasuci Fitonna Ridassepri; Yutaro Umejima; Jun Nakamura
Corresponding, The Journal of Physical Chemistry C, 128, 9513-9519, 13 Jun. 2024, Peer-reviwed
Scientific journal - First-principles study on edge–edge interactions of bilayer zigzag SiC nanoribbons
Jawahir Ali Sharifi; Rongyao Sun; Jun Nakamura
Corresponding, Japanese Journal of Applied Physics, 63, 055001-1-055001-7, 01 May 2024, Peer-reviwed
Scientific journal - A Functional N/S-doped Carbon Electrode from a Carbonized Bagasse Activated with Water Vapor
Fitria Rahmawati; Ainaya Febi Amalia; Arikasuci Fitonna Ridassepri; Jun Nakamura; Younki Lee
Journal of Electrochemical Science and Technology, The Korean Electrochemical Society - English Journal, 15, 4, 466-475, 24 Apr. 2024, Peer-reviwed, True, with international co-author(s), <p>This research used solid waste from sugarcane production, named bagasse, as raw material for a functional carbon electrode. The bagasse was carbonized to produce carbon powder and, following activation with water vapor at 700°C. The activated carbon was doped with N and S to improve its electrochemical properties by treating it with thiourea precursor and heating it at 850°C under nitrogen flow to produce N/S-doped carbon (NSCE). The produced carbon was then characterized to understand the specific diffraction pattern, molecular vibrations, and surface morphology. The result found that the NSCE showed two broad diffraction peaks at 23° and 43°, corresponding to [002] and [100] crystal planes following JCPDS75-1621. FTIR spectra showed some O–H, C–H, C–O, and C=C peaks. Peaks of C=N, C–N, and S–H demonstrate the presence of N/S within the NSCE. Raman analysis revealed that N/S doping caused structure defects within the single C6 layer networks, providing carbon vacancies (<inline-formula><mml:math id="m1" display="inline"><mml:semantics id="sm1"><mml:mrow><mml:msubsup><mml:mrow><mml:mi>V</mml:mi></mml:mrow><mml:mi>C</mml:mi><mml:mrow><mml:mo>•</mml:mo><mml:mo>•</mml:mo><mml:mo>•</mml:mo><mml:mo>•</mml:mo></mml:mrow></mml:msubsup></mml:mrow></mml:semantics></mml:math></inline-formula>) because of C replacement by <inline-formula><mml:math id="m2" display="inline"><mml:semantics id="sm2"><mml:mrow><mml:mtext>N </mml:mtext><mml:mo stretchy="false">(</mml:mo><mml:msubsup><mml:mrow><mml:mi>N</mml:mi></mml:mrow><mml:mi>C</mml:mi><mml:mo>′</mml:mo></mml:msubsup><mml:mo stretchy="false">)</mml:mo></mml:mrow></mml:semantics></mml:math></inline-formula> and <inline-formula><mml:math id="m3" display="inline"><mml:semantics id="sm3"><mml:mrow><mml:mtext>S </mml:mtext><mml:mo stretchy="false">(</mml:mo><mml:msubsup><mml:mrow><mml:mi>S</mml:mi></mml:mrow><mml:mi>C</mml:mi><mml:mo>″</mml:mo></mml:msubsup><mml:mo stretchy="false">)</mml:mo></mml:mrow></mml:semantics></mml:math></inline-formula>. Meanwhile, XPS analysis showed N/S introduction to the C network by revealing peaks at 168.26 eV and 169.55 eV, corresponding to S2p<sub>3/2</sub> and S2p<sub>1/2</sub>, and 171.95 eV corresponds to C–SO<sub>3</sub>–C, indicating the presence of S within the thiol group attached to the carbon. Meanwhile, N1s are revealed at 402.4 eV and 405.5 eV, confirming pyrrolic nitrogen (N-5) and quaternary nitrogen (N-Q). The electrochemical analysis found that the reaction within the prepared-NSCE/NaClO<sub>4</sub>/Na was reversible, with an onset potential of 0.1 V vs. Na/Na<sup>+</sup>, explaining the intercalation and deintercalation of sodium ions. The sodium battery full cell showed an excellent battery performance with an initial charging-discharging capacity of 720 mAh g<sup>−1</sup> and 570 mAh g<sup>−1</sup>, respectively, at 0.2C. Meanwhile, a cycling test showed the average Coulombic efficiency of 84.4% and capacity retention of 57% after 50 cycles.</p>
Scientific journal - Atomic structure of the Se-passivated GaAs(001) surface revisited
Akihiro Ohtake; Takayuki Suga; Shunji Goto; Daisuke Nakagawa; Jun Nakamura
Scientific Reports, Springer Science and Business Media LLC, 13, 1, 24 Oct. 2023, Peer-reviwed, Abstract
We present a combined experimental and theoretical study of the Se-treated GaAs(001)-($$2\times 1$$) surface. The ($$2\times 1$$) structure with the two-fold coordinated Se atom at the outermost layer and the three-fold coordinated Se atom at the third layer was found to be energetically stable and agrees well with the experimental data from scanning tunneling microscopy, low energy electron diffraction, and x-ray photoelectron spectroscopy. This atomic geometry accounts for the improved stability of the Se-treated surface against the oxidation. The present result allows us to address a long-standing question on the structure of the Se-passivated GaAs surface, and will leads us to a more complete understanding of the physical origin of the electrical and chemical passivation of Se-treated GaAs surface.
Scientific journal, English - Hydrogen storage on tin carbide monolayers with transition metal adatoms
Lucia G. Arellano; Alma L. Marcos-Viquez; Francisco De Santiago; Álvaro Miranda; Luis A. Pérez; Jun Nakamura; Miguel Cruz-Irisson
International Journal of Hydrogen Energy, Elsevier BV, 48, 96, Apr. 2023, Peer-reviwed
Scientific journal - ナノスケールのチューリング・パターン
中村淳
Lead, 表面と真空, 66, 3, 188-188, 10 Mar. 2023, Peer-reviwed
Scientific journal - Theoretical prediction of two-dimensional II-V compounds
Lucia G. Arellano; Takayuki Suga; Taichi Hazama; Taichi Takashima; Miguel Cruz-Irisson; Jun Nakamura
Last, PHYSICAL REVIEW MATERIALS, 7, 1, Jan. 2023, Peer-reviwed
Scientific journal, English - Tunable electronic properties of silicon nanowires as sodium-battery anodes
Lucia Guadalupe Arellano; Fernando Salazar; Álvaro Miranda; Alejandro Trejo; Luis Antonio Pérez; Jun Nakamura; Miguel Cruz-Irisson
Int. J. Energy Res., Wiley, 46, 17151-17162, 15 Jul. 2022, Peer-reviwed
Scientific journal, English - Size optimization of a N-doped graphene nanocluster for the oxygen reduction reaction
Haruyuki Matsuyama; Jun Nakamura
Corresponding, ACS Omega, ACS, 7, 3, 3093-3098, 12 Jan. 2022, Peer-reviwed
Scientific journal, English - Pyrolysis-Free Oxygen Reduction Reaction (ORR) Electrocatalysts Composed of Unimolecular Layer Metal Azaphthalocyanines Adsorbed onto Carbon Materials
Hiroshi Yabu; Koki Nakamura; Yasutaka Matsuo; Yutaro Umejima; Haruyuki Matsuyama; Jun Nakamura; Koju Iton
ACS Appl. Energy Mat., ACS, 4, 12, 14380-14389, 27 Dec. 2021, Peer-reviwed
Scientific journal, English - Ab initio study of hydrogen storage on metal-decorated GeC monolayers
Lucia Guadalupe Arellano; Francisco De Santiago; Álvaro Miranda; Luis Antonio Pérez; Fernando Salazar; Alejandro Trejo; Jun Nakamura; Miguel Cruz-Irisson
International Journal of Hydrogen Energy, Elsevier BV, 46, 57, 29261-29271, May 2021, Peer-reviwed
Scientific journal, English - Edge-State-Induced Stacking of Zigzag Graphene Nanoribbons
T.Asano; J.Nakamura
Corresponding, ACS Omega, American Chemical Society, 4, 26, 22035-22040, 09 Dec. 2019, Peer-reviwed
Scientific journal, English - Fe azaphthalocyanine unimolecular layers (Fe AzULs) on carbon nanotubes for realizing highly active oxygen reduction reaction (ORR) catalytic electrodes
Hiroya Abe; Yutaro Hirai; Susumu Ikeda; Yasutaka Matsuo; Haruyuki Matsuyama; Jun Nakamura; Tomokazu Matsue; Hiroshi Yabu
NPG Asia Materials, Springer-Nature, 11, 1, 57 (1)-57 (12), 01 Dec. 2019, Peer-reviwed
Scientific journal, English - 典型的な二元系化合物半導体の新しい超薄膜構造
中村淳
表面と真空, 日本表面真空学会, 62, 11, 686-686, 10 Nov. 2019, Peer-reviwed, Invited
Japanese - Effect of Water on the Manifestation of the Reaction Selectivity of Nitrogen-Doped Graphene Nanoclusters toward Oxygen Reduction Reaction
Haruyuki Matsuyama; Akira Akaishi; Jun Nakamura
ACS Omega, ACS, 4, 2, 3832-3838, 21 Feb. 2019, Peer-reviwed
Scientific journal, English - Softly-confined water cluster between freestanding graphene sheets
Rifan Agustian; Akira Akaishi; Jun Nakamura
AIP Conference Proceedings, American Institute of Physics Inc., 1929, 020006-1-020006-5, 22 Jan. 2018, Peer-reviwed
International conference proceedings, English - Plasma in Solution and Its Applications
Nagahiro Saito; Jun Nakamura; Tatsuru Shirafuji; Takahiro Ishizaki
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 57, 1, 010201-010201, 01 Jan. 2018, Peer-reviwed, Invited
Scientific journal, English - Reaction Selectivity for Oxygen Reduction of N-Doped Graphene Nanoclusters
H.Matsuyama; A.Akaishi; J.Nakamura
ECS Trans., ECS, 80, 8, 685-690, 2017, Peer-reviwed
International conference proceedings, English - Ballistic phonon thermal conductance of graphene and graphene nanoribbons
Nakamura Jun
Abstract of annual meeting of the Surface Science of Japan, The Surface Science Society of Japan, 35, 64-64, 2015, 本研究では、グラフェン、およびアームチェア型あるいはジグザグ型エッジを有するグラフェンナノリボンについて、フォノンの寄与によるバリスティック熱伝導特性を明らかにした。バリスティックフォノン熱コンダクタンスはランダウア熱流束から求める。グラフェンナノリボンの単位幅当たりの熱コンダクタンスは、グラフェンより大きく、かつリボン幅が小さくなるほど上昇することがわかった。 - Origin of symmetric STM images for the asymmetric atomic configuration on GaAs(001)-c(4 × 4)α surfaces
Shigeru Kaku; Jun Nakamura; Kazuma Yagyu; Junji Yoshino
Surface Science, Elsevier, 625, 84-89, 2014, Peer-reviwed
Scientific journal, English - Erratum: Controlled incorporation of Mn in GaAs: Role of surface reconstructions
Ohtake Akihiro; Hagiwara Atsushi; Nakamura Jun
PHYSICAL REVIEW B, 87, 16, Apr. 2013, Peer-reviwed - 教育の質保証評価ツールとしてのカリキュラムマップ
桑田正行; 安藤芳晃; 西一樹; 中村淳; 田中勝己
電気通信大学紀要, 電気通信大学, 25, 1, 41-50, Feb. 2013, The curriculum map (CM) provides a reasonable framework for quality assurance of education in certified evaluation and accreditation, accountability of university education, curriculum reform, and instructional improvement. Therefore, creation of CMs and its website have been made at many universities. However, there is nothing that described quantitatively how the CM is utilized for quality assurance of education. Then, in this paper, we describe the following things: (1) creation of the CM in the University of Electro-Communications, (2) in some viewpoints, scoring and visualization of the created CM, (3) the concrete guideline of the visualized CM's practical use as a tool to assess education achievement for quality assurance of education.
Research institution, Japanese - Ballistic phonon thermal conductance in Graphene Nano-Ribbon: First-principles calculations
Jun Nakamura; Hiroki Tomita
PHYSICS OF SEMICONDUCTORS, 1566, 139-140, 2013, Peer-reviwed
International conference proceedings, English - 酸化グラフェンの応用
中村淳
表面科学, 32, 112, Feb. 2011
Japanese - 応用物理学会人材育成・男女共同参画委員会における若手問題への取り組み
中村淳
放射線, 37, 22, Feb. 2011
Japanese - First-principles Calculations of the Dielectric Constant for the GeO2 Films
Masahiro Tamura; Jun Nakamura; Akiko Natori
TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS, 470, 60-65, 2011, Peer-reviwed
International conference proceedings, English - Structural and electronic properties of carbon nanocylinder consisting of nanoribbon-walls with arrayed-oxygen hinges
Yuto Fujii; Akiko Natori; Jun Nakamura
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 28, 4, C5C8-C5C11, Jul. 2010, Peer-reviwed
Scientific journal, English - ac conductivity and dielectric constant of nanotube polymer composites
Y.Hazama; N.Ainoya; J.Nakamura; A.Natori
37th Conference on the Physics and Chemistry of Surfaces and Interfaces, Mo1755, Jan. 2010, Peer-reviwed
International conference proceedings, English - Structural and electronic properties of carbon nanocylinder consisting of nanoribbon-walls with arrayed-oxygen hinges
Yuto Fujii; Akiko Natori; Jun Nakamura
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, AVS Science and Technology Society, 28, 4, C5-C11, 2010, Peer-reviwed
International conference proceedings, English - Dielectric properties of GeO2 ultrathin films
M.Tamura; S.Wakui; J.Nakamura; A.Natori
37th Conference on the Physics and Chemistry of Surfaces and Interfaces, We1740, Jan. 2010, Peer-reviwed
International conference proceedings, English - GaAs(110)表面上のGa置換Mn原子鎖のスピン状態と電子状態
平山基; 中村淳; 名取晃子
表面科学, 30, 9, 532-537, Sep. 2009, Peer-reviwed
Japanese - Structural and electronic properties of carbon nanotubes consisting of nanoribbon-walls with arrayed-oxygen hinges
J.Nakamura; Yuto Fujii; Motoi Hirayama; Shusuke Eguchi; Yuta Ogoshi; Jun Ito; A.Natori
10th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-10), Thu-16:30-And3, Sep. 2009, Peer-reviwed
International conference proceedings, English - Dielectric constant profiles of the thin-films: alpha- and beta-quartz phases of (Si or Ge) dioxides
J.Nakamura; S.Wakui; M.Tamura; A.Natori
12th International Conference on the Formation of Semiconductor Interfaces (ICFSI-12), Tu.A.5, Jul. 2009, Peer-reviwed
International conference proceedings, English - Structural stability and cohesive properties of the oxygen-adsorbed graphene
S.Eguchi; J.Nakamura; A.Natori
5th International Symposium on Surface Science and Nanotechnology(ISSS-5), 10p-p-116, Nov. 2008, Peer-reviwed
International conference proceedings, English - Dielectric properties of the ultra-thin La2O3(0001) film
R.Yanai; J.Nakamura; A.Natori
5th International Symposium on Surface Science and Nanotechnology(ISSS-5), 11p-p-5, Nov. 2008, Peer-reviwed
International conference proceedings, English - Conductivity and dielectric constant of anisotropic CNT/polymer composites
Y.Hazama; J.Nakamura; A.Natori
5th International Symposium on Surface Science and Nanotechnology(ISSS-5), 11p-p-71, Nov. 2008, Peer-reviwed
International conference proceedings, English - Half-metallic ground states of Mn atomic wires on GaAs(110)
M.Hirayama; J.Nakamura; A.Natori
5th International Symposium on Surface Science and Nanotechnology(ISSS-5), 12a-h-7, Nov. 2008, Peer-reviwed
International conference proceedings, English - First-principles evaluation of the polytype-dependence of the local dielectric constant for SiC
K.Sato; Y.Iwasaki; S.Wakui; J.Nakamura; A.Natori
5th International Symposium on Surface Science and Nanotechnology(ISSS-5), 12p-1-13, Nov. 2008, Peer-reviwed
International conference proceedings, English - Size effects in friction of multiatomic sliding contacts
Masanori Igarashi; Akiko Natori; Jun Nakamura
PHYSICAL REVIEW B, 78, 16, 165427 (1-10), Oct. 2008, Peer-reviwed
Scientific journal, English - Dielectric discontinuity at surfaces and interfaces: a first-principles approach
J.Nakamura; K-H.Sato; Y.Iwasaki; S.Wakui; A.Natori
International Conference on Nanoscience + Technology (ICN+T2008), NM2-TuM13, Jul. 2008, Peer-reviwed
International conference proceedings, English - Semiconducting nature of the oxygen-adsorbed graphene sheet
Jun Ito; Jun Nakamura; Akiko Natori
JOURNAL OF APPLIED PHYSICS, 103, 11, 113712 (1-5), Jun. 2008, Peer-reviwed
Scientific journal, English - Negative donors in multivalley semiconductors: Diffusion quantum Monte Carlo simulations
Jun-ichi Inoue; Jun Nakamura; Akiko Natori
PHYSICAL REVIEW B, 77, 12, 125213 (1-5), Mar. 2008, Peer-reviwed
Scientific journal, English - Structural bistability of the oxygen-adsorbed graphene sheet
J. Nakamura; J. Ito; A. Natori
PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 100, 052019 (1-4), 2008, Peer-reviwed
International conference proceedings, English - Ballistic thermal conductance of a graphene sheet
Koichi Saito; Jun Nakamura; Akiko Natori
PHYSICAL REVIEW B, 76, 11, 115409-1 - 115409-4, Sep. 2007, Peer-reviwed
Scientific journal, English - Mechanism of velocity saturation of atomic friction force and dynamic superlubricity at torsional resonance
Masanori Igarashi; Jun Nakamura; Akiko Natori
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46, 8B, 5591-5594, Aug. 2007, Peer-reviwed
Scientific journal, English - Simulations of scanning Tunneling Microscopy for B-/P-doped Si(111) surfaces
Motoi Hirayama; Jun Nakamura; Akiko Natori
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46, 8B, 5643-5646, Aug. 2007, Peer-reviwed
Scientific journal, English - Dielectric properties of the interface between Si and SiO2
Sadakazu Wakui; Jun Nakamura; Akiko Natori
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46, 5B, 3261-3264, May 2007, Peer-reviwed
Scientific journal, English - First-principles evaluations of dielectric properties from nano-scale points of view
Jun Nakamura; Sadakazu Wakui; Akiko Natori
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 1407-1410, 2007, Peer-reviwed
International conference proceedings, English - Dielectric discontinuity at a twin boundary in Si(111)
Jun Nakamura; Akiko Natori
PHYSICS OF SEMICONDUCTORS, PTS A AND B, 893, 5-+, 2007, Peer-reviwed
International conference proceedings, English - Charge correlation and spin coupling in double quantum dots
Hyuga Masu; Jun Nakamura; Akiko Natori
PHYSICS OF SEMICONDUCTORS, PTS A AND B, 893, 775-+, 2007, Peer-reviwed
International conference proceedings, English - Nano-scale profile of the dielectric constant near the Si/oxide interface: A first-principles approach
J. Nakamura; S. Wakui; S. Eguchi; R. Yanai; A. Natori
ECS Transactions, 11, 6, 173-182, 2007, Peer-reviwed
International conference proceedings, English - First-principles evaluations of dielectric constants for ultra-thin semiconducting films
J.Nakamura; A.Natori
Surface Science, 600, 4332-4336, Oct. 2006, Peer-reviwed
Scientific journal, English - ac conductivity and dielectric constant of conductor-insulator composites
Tan Benny Murtanto; Satoshi Natori; Jun Nakamura; Akiko Natori
PHYSICAL REVIEW B, 74, 11, 115206-1 - 115206-7, Sep. 2006, Peer-reviwed
Scientific journal, English - Charge correlation and spin coupling in double quantum dots: A quantum diffusion Monte Carlo study
Hyuga Masu; Taichi Yamada; Jun Nakamura; Akiko Natori
PHYSICAL REVIEW B, 74, 7, 075312-1 - 075312-8, Aug. 2006, Peer-reviwed
Scientific journal, English - First-principles calculations of dielectric constants for ultrathin Sio(2) films
Sadakazu Wakui; Jun Nakamura; Akiko Natori
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 24, 4, 1992-1996, Jul. 2006, Peer-reviwed
Scientific journal, English - Structural stabilities and electronic properties for planar Si compounds
Motoi Hirayama; Jun Nakamura; Akiko Natori
e-Journal of Surface Science and Nanotechnology, 4, 528-533, 09 Jun. 2006, Peer-reviwed
Scientific journal, English - Double-slip mechanism in atomic-scale friction: Tomlinson model at finite temperatures (vol 72, art no 235415, 2005)
J Nakamura; S Wakunami; A Natori
PHYSICAL REVIEW B, 73, 16, 169901-1, Apr. 2006, Peer-reviwed
Scientific journal, English - Dielectric properties of hydrogen-terminated Si(111) ultrathin films
J Nakamura; S Ishihara; A Natori; T Shimizu; K Natori
JOURNAL OF APPLIED PHYSICS, 99, 5, 054309-1 - 054309-5, Mar. 2006, Peer-reviwed
Scientific journal, English - First-principles evaluations of dielectric constants
Jun Nakamura; Sadakazu Wakui; Akiko Natori
2006 INTERNATIONAL WORKSHOP ON NANO CMOS, PROCEEDINGS, 236-249, 2006, Peer-reviwed
International conference proceedings, English - Dielectric discontinuity at structural boundaries in Si
Jun Nakamura; Akiko Natori
Applied Physics Letters, 89, 5, 053118-1 - 053118-3, 2006, Peer-reviwed
Scientific journal, English - Double-slip mechanism in atomic-scale friction: Tomlinson model at finite temperatures
J Nakamura; S Wakunami; A Natori
PHYSICAL REVIEW B, 72, 23, 235415-1 - 235415-6, Dec. 2005, Peer-reviwed
Scientific journal, English - Electronic and magnetic properties of BNC ribbons
J Nakamura; T Nitta; A Natori
PHYSICAL REVIEW B, 72, 20, 205429-1 - 205429-5, Nov. 2005, Peer-reviwed
Scientific journal, English - Friction in atomic scale
S.Wakunami; J.Nakamura; A.Natori
13th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM05), Jul. 2005, Peer-reviwed
International conference proceedings, English - 半導体超薄膜の誘電特性
中村淳; 名取晃子
表面科学, 26, 7, 392-397, Jul. 2005, Peer-reviwed
Scientific journal, Japanese - Two types of surface atomic structures for As-rich GaAs(001)-c(4x4)
A.Ohtake; P.Kocan; J.Nakamura; A.Natori; N.Koguchi
The 8th International Conference on the Structure of Surfaces (ICSOS-8), Mo.P49, Jul. 2005, Peer-reviwed
International conference proceedings, English - Electronic and magnetic properties of BNC ribbons
T.Nitta; J.Nakamura; A.Natori
The 8th International Conference on the Structure of Surfaces (ICSOS-8), Th.P36, Jul. 2005
International conference proceedings, English - Spatial variation in dielectric constant at surfaces of hydrogen-terminated ultra-thin Si(111) films
J.Nakamura; A.Natori
The 8th International Conference on the Structure of Surfaces (ICSOS-8), Th.P35, Jul. 2005, Peer-reviwed
International conference proceedings, English - Structural stability of Si(001) and Ge(001) in external electric fields
J Nakamura; A Natori
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44, 7B, 5413-5416, Jul. 2005, Peer-reviwed
Scientific journal, English - Energy barrier for dimer flipping at the Si(001)-(2x1) surface in external electric fields
J Nakamura; A Natori
PHYSICAL REVIEW B, 71, 11, 113303-1 - 113303-4, Mar. 2005, Peer-reviwed
Scientific journal, English - Energy barrier for dimer flipping at the Si(001)-2 x 1 surface in external electrostatic fields
J Nakamura; A Natori
PHYSICS OF SEMICONDUCTORS, PTS A AND B, 772, 371-372, 2005, Peer-reviwed
International conference proceedings, English - Dielectric properties of ultra-thin films
J Nakamura; S Ishihara; H Ozawa; A Natori
PHYSICS OF SEMICONDUCTORS, PTS A AND B, 772, 951-952, 2005, Peer-reviwed
International conference proceedings, English - Ge/Si(113)-(2x2) surfaces: structural features induced by self-interstitial atoms
Z.H.Zhang; K.Sumitomo; J.Nakamura
Wuli, 33, 708-712, Oct. 2004, Peer-reviwed
Scientific journal, English - Ga-As dimer structure for the GaAs(001)-c(4x4) surface
A Ohtake; J Nakamura; N Koguchi; A Natori
SURFACE SCIENCE, 566, 58-62, Sep. 2004, Peer-reviwed
Scientific journal, English - Atomic scale friction of nanoscale clusters
K.Ohno; T.Nitta; J.Nakamura; A.Natori
Journal of Vacuum Science and Technology B, 22, 2026-2029, Aug. 2004, Peer-reviwed
Scientific journal, English - Kinetics in surface reconstructions on GaAs(001)
A Ohtake; P Kocan; J Nakamura; A Natori; N Koguchi
PHYSICAL REVIEW LETTERS, 92, 23, 236105-1 - 236105-4, Jun. 2004, Peer-reviwed
Scientific journal, English - First-principles study on the atomic and electronic structures of the Au/Si(111)-alpha(Sqrt3xSqrt3)R30 surface
T.Kadohira; J.Nakamura; S.Watanabe
e-Journal of Surface Science and Nanotechnology, 2, 146-150, Apr. 2004, Peer-reviwed
Scientific journal, English - Direct observation of Au deposition processes on the InSb{111}A,B-(2x2) surfaces
S.P.Cho; J.Nakamura; N.Tanaka; T.Osaka
Nanotechnology, 15, S371-S375, Apr. 2004, Peer-reviwed
English - Band discontinuity at ultrathin SiO2/Si(001) interfaces
M Watarai; J Nakamura; A Natori
PHYSICAL REVIEW B, 69, 3, 035312-1 - 035312-6, Jan. 2004, Peer-reviwed
Scientific journal, English - Ge/Si(113)-2x2表面の構造安定性と応力異方性
中村淳; 張朝暉; 住友弘二; 尾身博雄; 荻野俊郎; 名取晃子
表面科学, 24, 9, 526-530, Sep. 2003, Peer-reviwed
Japanese - 極薄SiO2/Si界面のエネルギー障壁の第一原理計算
渡会雅敏; 中村淳; 名取晃子
表面科学, 24, 9, 550-555, Sep. 2003, Peer-reviwed
Scientific journal, Japanese - Dynamics of c(4 x 2) phase-transition in Si(100) surfaces
A Natori; M Osanai; J Nakamura; H Yasunaga
APPLIED SURFACE SCIENCE, 212, 705-710, May 2003, Peer-reviwed
Scientific journal, English - Structural stability of the Ge/Si(113)-2 x 2 surface
J Nakamura; ZH Zhang; K Sumitomo; H Omi; T Ogino; A Natori
APPLIED SURFACE SCIENCE, 212, 724-729, May 2003, Peer-reviwed
Scientific journal, English - Au/InSb(111)A系における合金形成過程
趙星彪; 原尚子; 成瀬延康; 門平卓也; 中村淳; 大坂敏明
表面科学, 日本表面科学会, 24, 2, 111-117, Feb. 2003, Peer-reviwed
Scientific journal, Japanese - New structure model for the GaAs(001)-c(4x4) surface
A.Ohtake; J.Nakamura; S.Tsukamoto; N.Koguchi; A.Natori
Physical Review Letters, 89, 206102-1 - 206102-4, Oct. 2002, Peer-reviwed
Scientific journal, English - Atomic structures of the Ge/Si(113)-(2X2) surface
ZH Zhang; K Sumitomo; H Omi; T Ogino; J Nakamura; A Natori
PHYSICAL REVIEW LETTERS, 88, 25, 256101-1 - 256101-4, Jun. 2002, Peer-reviwed
Scientific journal, English - New Structure Model for the [Formula presented] Surface
Akihiro Ohtake; Jun Nakamura; Shiro Tsukamoto; Nobuyuki Koguchi; Akiko Natori
Physical Review Letters, 89, 20, 2002
Scientific journal, English - Theoretical study on the structural phase transition of Si(111)root 3 x root 3-Ag surface
Y Nakamura; Y Kondo; J Nakamura; S Watanabe
SURFACE SCIENCE, 493, 1-3, 206-213, Nov. 2001, Peer-reviwed
Scientific journal, English - STM images apparently corresponding to a stable structure: Considerable fluctuation of a phase boundary of the Si(111)-(root 3 x root 3)-Ag surface
Y Nakamura; Y Kondo; J Nakamura; S Watanabe
PHYSICAL REVIEW LETTERS, 87, 15, 156102-1-156102-4, Oct. 2001, Peer-reviwed
Scientific journal, English - Surface structures of GaAs{111}A,B-(2 × 2)
A. Ohtake; J. Nakamura; T. Komura; T. Hanada; T. Yao; H. Kuramochi; M. Ozeki
Physical Review B - Condensed Matter and Materials Physics, 64, 453181-453188, 15 Jul. 2001 - Structural and cohesive properties of a C-60 monolayer
J Nakamura; T Nakayama; S Watanabe; M Aono
PHYSICAL REVIEW LETTERS, 87, 4, 0483011-0483014, Jul. 2001, Peer-reviwed
Scientific journal, English - Surface structures of GaAs{111}A,B-(2X2)
A Ohtake; J Nakamura; T Komura; T Hanada; T Yao; H Kuramochi; M Ozeki
PHYSICAL REVIEW B, 64, 4, 0453181-0453188, Jul. 2001, Peer-reviwed
Scientific journal, English - Structural stability and electronic states of gold nanowires
J Nakamura; N Kobayashi; S Watanabe; M Aono
SURFACE SCIENCE, 482, 1266-1271, Jun. 2001, Peer-reviwed
Scientific journal, English - Anisotropic electronic structure of the Si(111)-(4x1)In surface
J Nakamura; S Watanabe; M Aono
PHYSICAL REVIEW B, 63, 19, 193307-1-193307-4, May 2001, Peer-reviwed
Scientific journal, English - Wurtzite-zinc-blende polytypism in ZnSe on GaAs(111)A
A Ohtake; J Nakamura; M Terauchi; F Sato; M Tanaka; K Kimura; T Yao
PHYSICAL REVIEW B, 63, 19, 195325-1-195325-4, May 2001, Peer-reviwed
Scientific journal, English - Surface structures of (formula presented)
Akihiro Ohtake; Jun Nakamura; Takuji Komura; Takashi Hanada; Takafumi Yao; Hiromi Kuramochi; Masashi Ozeki
Physical Review B - Condensed Matter and Materials Physics, 64, 4, 2001, Peer-reviwed
Scientific journal, English - Electronic states and structural stability of gold nanowires
Jun Nakamura; Nobuhiko Kobayashi; Masakazu Aono
RIKEN Review, 37, 17-20, 2001, Peer-reviwed
Research institution, English - Structural and electronic properties of two-dimensional C60
Jun Nakamura; Tomonobu Nakayama; Satoshi Watanabe; Masakazu Aono
Trans.Mat.Res.Soc.Jpn., 26, 1167-1170, 2001, Peer-reviwed
Scientific journal, English - Structural ordering on Si(111)root 3 x root 3-Ag surface: Monte Carlo simulation based on first-principles calculations
Y Nakamura; Y Kondo; J Nakamura; S Watanabe
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 87, 295-296, 2001, Peer-reviwed
International conference proceedings, English - Strain relaxation in InAs/GaAs(111)A heteroepitaxy
A Ohtake; M Ozeki; J Nakamura
PHYSICAL REVIEW LETTERS, 84, 20, 4665-4668, May 2000, Peer-reviwed
Scientific journal, English - Study of diffusion and defects by medium-energy coaxial impact-collision ion scattering spectroscopy
T Kobayashi; CF McConville; J Nakamura; G Dorenbos; H Sone; T Katayama; M Aono
DEFECTS AND DIFFUSION IN SEMICONDUCTORS, 183-1, 207-213, 2000, Peer-reviwed
Scientific journal, English - Atomic and electronic structure of the Si(111)-root 3x root 3-Ag surface reexamined using first-principles calculations
S. Watanabe; Y. Kondo; Y. Nakamura; J. Nakamura
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 1, 3, 167-172, 2000, Peer-reviwed
Scientific journal, English - Photoinduced products in a C-60 monolayer on Si(111)(root 3x root 3)-Ag: An STM study
T Nakayama; J Onoe; K Nakatsuji; J Nakamura; K Takeuchi; M Aono
SURFACE REVIEW AND LETTERS, 6, 6, 1073-1078, Dec. 1999, Peer-reviwed
Scientific journal, English - Structure and electronic states for a single strand of gold atoms
J.Nakamura; M.Aono
RIKEN Review, 25, 34-36, 1999, Peer-reviwed
Research institution, English - Chemical bonding features for faultily stacked interfaces of GaAs{111}
J Nakamura; T Mishima; MH Masui; M Sawayanagi; SP Cho; M Nishizawa; T Eguchi; T Osaka
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 16, 4, 2426-2431, Jul. 1998, Peer-reviwed
Scientific journal, English - Direct imaging of the evolving Au/InSb(III) B interface
T Mishima; J Nakamura; K Tsukada; M Nishizawa; T Eguchi; T Osaka
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 16, 4, 2324-2327, Jul. 1998, Peer-reviwed
Scientific journal, English - Structure of the InSb(111)A-(2 root 3x2 root 3)-R30 degrees surface and its dynamical formation processes
M Nishizawa; T Eguchi; T Misima; J Nakamura; T Osaka
PHYSICAL REVIEW B, 57, 11, 6317-6320, Mar. 1998, Peer-reviwed
Scientific journal, English - Structure and electronic states of the alpha-Sn(111)-(2x2) surface
T Eguchi; J Nakamura; T Osaka
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 67, 2, 381-384, Feb. 1998, Peer-reviwed
Scientific journal, English - Reflection high-energy electron diffraction analysis of the InSb{111}A,B-(2x2) surfaces
A Ohtake; J Nakamura
SURFACE SCIENCE, 396, 1-3, 394-399, Jan. 1998, Peer-reviwed
Scientific journal, English - Nucleation of Au on KCl(001)
J Nakamura; T Kagawa; T Osaka
SURFACE SCIENCE, 389, 1-3, 109-115, Nov. 1997, Peer-reviwed
Scientific journal, English - Structural stability and its electronic origin of the GaAs(111)A-2x2 surface
J Nakamura; H Nakajima; T Osaka
APPLIED SURFACE SCIENCE, 121, 249-252, Nov. 1997, Peer-reviwed
Scientific journal, English - s-character of MX4 (M=C, Si, Ge, X=F, Cl, Br, I) molecules
J Nakamura; H Konogi; H Sato; T Osaka
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 66, 6, 1656-1659, Jun. 1997, Peer-reviwed
Scientific journal, English - Initial growth processes of Ag on polar and non-polar semiconductor substrates
A Ohtake; J Nakamura; T Osaka
SURFACE SCIENCE, 380, 1, L437-L440, May 1997, Peer-reviwed
Scientific journal, English - Geometry and lattice formation of surface layers of Sn growing on InSb{111}A,B
A Ohtake; J Nakamura; T Eguchi; T Osaka
PHYSICAL REVIEW B, 54, 15, 10358-10361, Oct. 1996, Peer-reviwed
Scientific journal, English - Surfactant-induced bond strengthening in As-grown film surfaces
J Nakamura; H Konogi; T Osaka
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 35, 4A, L441-L443, Apr. 1996, Peer-reviwed
Scientific journal, English - INHOMOGENEOUS CHARGE-TRANSFER IN AN INCOMMENSURATE SYSTEM
J NAKAMURA; H KONOGI; T OSAKA
PHYSICAL REVIEW B, 51, 8, 5433-5436, Feb. 1995, Peer-reviwed
Scientific journal, English
MISC
- オゾンの効率的な生成を促す局所原子配列
中村淳
日本表面真空学会, 10 Oct. 2021, 表面と真空, 64, 10, 482-482, Japanese, Peer-reviwed, Invited, Introduction scientific journal - Plasma in Solution and Its Applications FOREWORD
Nagahiro Saito; Jun Nakamura; Tatsuru Shirafuji; Takahiro Ishizaki
Jan. 2018, JAPANESE JOURNAL OF APPLIED PHYSICS, 57, 1, 010201, English, Others, 0021-4922, 1347-4065, WOS:000414177400001 - 26pPSB-36 Atomic arrangement and electronic states of the GaAs(001)-(2x2)Mn surface
Kanno Yusuke; Ohtake Akihiro; Nakamura Jun
The Physical Society of Japan (JPS), 05 Mar. 2012, Meeting abstracts of the Physical Society of Japan, 67, 1, 964-964, Japanese, 1342-8349, 110009568361, AA11439205 - 23pPSB-7 Atomic arrangement and electronic states of the GaAs(001)-(2×2)Mn surface
Kanno Yusuke; Ohtake Akihiro; Hirayama Motoi; Nakamura Jun
The Physical Society of Japan (JPS), 24 Aug. 2011, Meeting abstracts of the Physical Society of Japan, 66, 2, 946-946, Japanese, 1342-8349, 110008760711, AA11439205 - 23aWS-9 Atomic structure of Sb-stabilized GaSb(001)-(2x5) surface
Ohtake A.; Hirayama M.; Nakamura J.
The Physical Society of Japan (JPS), 18 Aug. 2010, Meeting abstracts of the Physical Society of Japan, 65, 2, 838-838, Japanese, 1342-8349, 110008099606, AA11439205 - 21aGL-7 The effect of the oxygen vacancy on the local dielectric constant in the SiO_2 and HfO_2 films
Wakui S.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 01 Mar. 2010, Meeting abstracts of the Physical Society of Japan, 65, 1, 934-934, Japanese, 1342-8349, 110007657266, AA11439205 - 21aHW-4 Well-width Dependence on D-binding Energy in the Si/SiO_2 quantum wells : Effect of Valley-orbit interaction
Chiba Tomo; Nakamura Jun; Natori Akiko
The Physical Society of Japan (JPS), 01 Mar. 2010, Meeting abstracts of the Physical Society of Japan, 65, 1, 714-714, Japanese, 1342-8349, 110007656460, AA11439205 - 22pGL-5 Magnetic properties of single MnAs layer on GaAs(110)
Hirayama Motoi; Nakamura Jun; Natori Akiko
The Physical Society of Japan (JPS), 01 Mar. 2010, Meeting abstracts of the Physical Society of Japan, 65, 1, 954-954, Japanese, 1342-8349, 110007657336, AA11439205 - 23aXB-1 Sb-induced GaAs(001)-(2x4) reconstruction revisited
Ohtake A.; Hirayama M.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 25 Aug. 2008, Meeting abstracts of the Physical Society of Japan, 63, 2, 849-849, Japanese, 1342-8349, 110006985646, AA11439205 - 20aXA-14 Magnetic properties of the Ga-substituted Mn atomic wire on GaAs (110)
Hirayama Motoi; Nakamura Jun; Natori Akiko
The Physical Society of Japan (JPS), 25 Aug. 2008, Meeting abstracts of the Physical Society of Japan, 63, 2, 363-363, Japanese, 1342-8349, 110006983801, AA11439205 - 22pTA-12 Ballistic thermal conductance of graphene ribbons
Yamaguchi S.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 25 Aug. 2008, Meeting abstracts of the Physical Society of Japan, 63, 2, 769-769, Japanese, 1342-8349, 110006985341, AA11439205 - 25pWF-11 Mechanism of the atomic scale friction force : An effect of the tip size
Igarashi Masanori; Nakamura Jun; Natori Akiko
The Physical Society of Japan (JPS), 29 Feb. 2008, Meeting abstracts of the Physical Society of Japan, 63, 1, 316-316, Japanese, 1342-8349, 110007196323, AA11439205 - 26pTD-9 First-principles calculation of STM images for impurity doped Si(111)H surfaces : Dopant species dependence on the STM image
Hirayama Motoi; Nakamura Jun; Natori Akiko
The Physical Society of Japan (JPS), 29 Feb. 2008, Meeting abstracts of the Physical Society of Japan, 63, 1, 908-908, Japanese, 1342-8349, 110007194323, AA11439205 - 25pTD-3 First-principles calculations of the nanoscale dielectric constant for SiO_2/Si(001)
Wakui S.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 29 Feb. 2008, Meeting abstracts of the Physical Society of Japan, 63, 1, 892-892, Japanese, 1342-8349, 110007194376, AA11439205 - 22aPS-124 Ballistic thermal conductance of a graphene sheet
Saito K.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 21 Aug. 2007, Meeting abstracts of the Physical Society of Japan, 62, 2, 693-693, Japanese, 1342-8349, 110007142740, AA11439205 - 21aTG-9 First principles calculation of structural bistability of O adsorbed graphene sheets
Ito J.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 28 Feb. 2007, Meeting abstracts of the Physical Society of Japan, 62, 1, 920-920, Japanese, 1342-8349, 110007192295, AA11439205 - 18pTG-9 First-principles calculations of nanoscale dielectric constants at SiO_2/Si(001) interfaces
Wakui S.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 28 Feb. 2007, Meeting abstracts of the Physical Society of Japan, 62, 1, 878-878, Japanese, 1342-8349, 110007192364, AA11439205 - 18pTG-10 First-principles calculation of STM image for B/P-doped Si(111)H surfaces
Hirayama Motoi; Nakamura Jun; Natori Akiko
The Physical Society of Japan (JPS), 28 Feb. 2007, Meeting abstracts of the Physical Society of Japan, 62, 1, 878-878, Japanese, 1342-8349, 110007192363, AA11439205 - 18pWH-4 Mechanism in atomic-scale friction : One-dimensional Tomlinson model at finite temperatures
Nakamura Jun
The Physical Society of Japan (JPS), 28 Feb. 2007, Meeting abstracts of the Physical Society of Japan, 62, 1, 880-880, Japanese, 1342-8349, 110007191575, AA11439205 - 23pYH-3 A mechanism of the saturation of atomic friction force
Igarashi Masanori; Nakamura Jun; Natori Akiko
The Physical Society of Japan (JPS), 18 Aug. 2006, Meeting abstracts of the Physical Society of Japan, 61, 2, 727-727, Japanese, 1342-8349, 110007179456, AA11439205 - 29pXB-13 Magnetic Field Controlling of the spin coupling in double quantum dots
Masu H.; Yamada T.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 04 Mar. 2006, Meeting abstracts of the Physical Society of Japan, 61, 1, 698-698, Japanese, 1342-8349, 110007178048, AA11439205 - 29pXJ-1 Dielectric discontinuity at a twin boundary of the Si (111) film
Nakamura Jun; Natori Akiko
The Physical Society of Japan (JPS), 04 Mar. 2006, Meeting abstracts of the Physical Society of Japan, 61, 1, 889-889, Japanese, 1342-8349, 110007179750, AA11439205 - 21aPS-51 Atomic scale mechanism of friction
Wakunami S.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 19 Aug. 2005, Meeting abstracts of the Physical Society of Japan, 60, 2, 767-767, Japanese, 1342-8349, 110004559841, AA11439205 - 21pYE-7 Dielectric Properties for ultra-thin films of the polytypes of SiC
Nakamura Jun; Natori Akiko
The Physical Society of Japan (JPS), 19 Aug. 2005, Meeting abstracts of the Physical Society of Japan, 60, 2, 780-780, Japanese, 1342-8349, 110004559896, AA11439205 - 20aYE-7 First-principles calculations of dielectric constants for ultrathin SiO_2 films
Wakui S.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 19 Aug. 2005, Meeting abstracts of the Physical Society of Japan, 60, 2, 742-742, Japanese, 1342-8349, 110004559751, AA11439205 - 22pYE-3 First principles calculation on adsorption and diffusion of O on graphene sheets
Ito J.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 19 Aug. 2005, Meeting abstracts of the Physical Society of Japan, 60, 2, 791-791, Japanese, 1342-8349, 110004559940, AA11439205 - 27aXD-9 Magnetic properties of BNC ribbons II
Nitta T.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 04 Mar. 2005, Meeting abstracts of the Physical Society of Japan, 60, 1, 882-882, Japanese, 1342-8349, 110004537427, AA11439205 - 24aPS-145 Atomic Structures and Electronic States of Planar Silicon Compounds
Hirayama Motoi; Nakamura Jun; Natori Akiko
The Physical Society of Japan (JPS), 04 Mar. 2005, Meeting abstracts of the Physical Society of Japan, 60, 1, 838-838, Japanese, 1342-8349, 110004537264, AA11439205 - 15pXG-14 Energy barrier for dimmer flipping at Si(001)-2×1 in external electric fields
Nakamura Jun; Natori Akiko
The Physical Society of Japan (JPS), 25 Aug. 2004, Meeting abstracts of the Physical Society of Japan, 59, 2, 849-849, Japanese, 1342-8349, 110002050816, AA11439205 - 15aPS-9 High frequency properties of electrical conduction in metal-insulator composite materials
Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 25 Aug. 2004, Meeting abstracts of the Physical Society of Japan, 59, 2, 825-825, Japanese, 1342-8349, 110002050521, AA11439205 - 15aPS-10 Magic size and friction of atomic clusters on heterogeneous substrates
Ohno K.; Nitta T.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 25 Aug. 2004, Meeting abstracts of the Physical Society of Japan, 59, 2, 825-825, Japanese, 1342-8349, 110002050524, AA11439205 - 15pXG-4 Stable and metastable structures of GaAs(001)-c(4×4)
Ohtake A.; Kocan P.; Nakamura J.; Natori A.; Koguchi N.
The Physical Society of Japan (JPS), 25 Aug. 2004, Meeting abstracts of the Physical Society of Japan, 59, 2, 847-847, Japanese, 1342-8349, 110002050786, AA11439205 - 15aPS-81 Magnetic properties of BN ribbons
Nitta T.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 25 Aug. 2004, Meeting abstracts of the Physical Society of Japan, 59, 2, 842-842, Japanese, 1342-8349, 110002050736, AA11439205 - 14aXG-3 Dielectric properties of ultra-thin Si films
Nakamura Jun; Natori Akiko
The Physical Society of Japan (JPS), 25 Aug. 2004, Meeting abstracts of the Physical Society of Japan, 59, 2, 813-813, Japanese, 1342-8349, 110002050388, AA11439205 - 29pYA-7 Spin Coupling in Double Quantum Dots
Yamada T.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 03 Mar. 2004, Meeting abstracts of the Physical Society of Japan, 59, 1, 696-696, Japanese, 1342-8349, 110002195930, AA11439205 - 30aWP-5 Dielectric properties of Si ultra-thin films
Ishihara S.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 03 Mar. 2004, Meeting abstracts of the Physical Society of Japan, 59, 1, 927-927, Japanese, 1342-8349, 110002200323, AA11439205 - 28pWP-3 Study on the Au/Si(111) -(√<3>×√<3>) surface structure by first principle calculations
Kadohira T.; Nakamura J.; Watanabe S.
The Physical Society of Japan (JPS), 03 Mar. 2004, Meeting abstracts of the Physical Society of Japan, 59, 1, 913-913, Japanese, 1342-8349, 110002200092, AA11439205 - First-principles analysis for electrostatic response of ultra-thin films
Nakamura Jun; Ishihara shunsuke; Shimizu Tomo; Natori Kenji; Natori Akiko
The Physical Society of Japan (JPS), 15 Aug. 2003, Meeting abstracts of the Physical Society of Japan, 58, 2, 772-772, Japanese, 1342-8349, 110002063987, AA11439205 - Defected Ga-As dimer structure on the GaAs (001)-c (4x4) surface
Ohtake A.; Nakamura J.; Tsukamoto S.; Koguchi N.; Natori A.
The Physical Society of Japan (JPS), 06 Mar. 2003, Meeting abstracts of the Physical Society of Japan, 58, 1, 852-852, Japanese, 1342-8349, 110002223443, AA11439205 - Control of spin coupling in coupled quantum dots
Seshimo Y.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 06 Mar. 2003, Meeting abstracts of the Physical Society of Japan, 58, 1, 663-663, Japanese, 1342-8349, 110002220598, AA11439205 - Anisotropic surface stress of Ge/Si(113)-2×2
Nakamura Jun; Zhang Z.; Sumitomo K.; Omi H.; Ogino T.; Natori Akiko
The Physical Society of Japan (JPS), 06 Mar. 2003, Meeting abstracts of the Physical Society of Japan, 58, 1, 879-879, Japanese, 1342-8349, 110002223840, AA11439205 - A new structure model proposed for the GaAs(001)-c(4×4) surface
Ohtake A.; Nakamura J.; Tsukamoto S.; Koguchi N.; Natori A.
The Physical Society of Japan (JPS), 13 Aug. 2002, Meeting abstracts of the Physical Society of Japan, 57, 2, 753-753, Japanese, 1342-8349, 110009719782, AA11439205 - Tunneling properties of SiO2 ultra thin films
Watarai M.; Nakamura J.; Natori A.
The Physical Society of Japan (JPS), 13 Aug. 2002, Meeting abstracts of the Physical Society of Japan, 57, 2, 761-761, Japanese, 1342-8349, 110009719815, AA11439205 - 25pPSB-60 Two-dimensional current distribution between two current probesin inhomogeneous surfaces
Natori A.; Itoh T.; Nakamura J.; Yasunaga H.
The Physical Society of Japan (JPS), 01 Mar. 2002, Meeting abstracts of the Physical Society of Japan, 57, 1, 850-850, Japanese, 1342-8349, 110009774499, AA11439205 - 25pPSB-43 Dimer buckling dynamics on Si(100) surfaces
Osanai M.; Nakamura J.; Yasunaga H.; Natori A.
The Physical Society of Japan (JPS), 01 Mar. 2002, Meeting abstracts of the Physical Society of Japan, 57, 1, 846-846, Japanese, 1342-8349, 110009774482, AA11439205 - As安定化GaAs(001)-c(4x4)表面に対する新たな構造モデル
大竹晃浩; 中村淳; 塚本史郎; 小口信行; 名取晃子
2002, 応用物理学会学術講演会講演予稿集, 63rd, 1, 200902161685841903 - Structural stability of the Ge/Si(113)-2x2 surface
Nakamura Jun; Zhang Z.; Sumitomo K.; Omi H.; Ogino T.; Natori A.
The Physical Society of Japan (JPS), 03 Sep. 2001, Meeting abstracts of the Physical Society of Japan, 56, 2, 762-762, Japanese, 1342-8349, 110002048708, AA11439205 - Multipole Polarizabilities of Closed Shell Ions and Atoms
Nakamura Jun
The Physical Society of Japan (JPS), 10 Sep. 2000, Meeting abstracts of the Physical Society of Japan, 55, 2, 591-591, Japanese, 1342-8349, 110002146527, AA11439205 - 6p-B-11 Structure and electronic states of the α-Sn(111)-(2×2)surface II
Nakamura Jun.; Eguchi Toyoaki; Osaka Toshiaki
The Physical Society of Japan (JPS), 16 Sep. 1997, Meeting abstracts of the Physical Society of Japan, 52, 2, 351-351, Japanese, 1342-8349, 110002061165, AA11439205 - 5a-H-11 Structure and electronic states of the α-Sn(111)-(2×2)surface I
Eguchi Toyoaki; Nakamura Jun; Osaka Toshiaki
The Physical Society of Japan (JPS), 16 Sep. 1997, Meeting abstracts of the Physical Society of Japan, 52, 2, 336-336, Japanese, 1342-8349, 110002061041, AA11439205 - RHEED rocking curve analysis for the Si(111)√3×√3R30°-Au surface
Nakagawa A.; Nakamura J.; Ohtake A.; Osaka T.
The Physical Society of Japan (JPS), 13 Sep. 1996, Abstracts of the meeting of the Physical Society of Japan. Sectional meeting, 1996, 2, 643-643, Japanese, 110001985938, AN10453836 - 30a-PS-29 RHEED rocking curve analysis of InSb{111}A, B surfaces
Ohtake Akihiro; Nakamura Jun; Osaka Toshiaki
The Physical Society of Japan (JPS), 12 Sep. 1995, Abstracts of the meeting of the Physical Society of Japan. Sectional meeting, 1995, 2, 523-523, Japanese, 110001982549, AN10453836
Books and other publications
- Molecular Technology, Volume 3: Materials Innovation (hardcover)
Gasidit Panomsuwan; Tomonaga Ueno; Hiroharu Yui; Jun Nakamura; Nagahiro Saito
Scholarly book, English, Contributor, Section 7. Solution Plasma Reactions and Materials Synthesis, Wiley, Apr. 2019, 9783527341610 - Molecular Technology, Volume 3: Materials Innovation (e-book)
Gasidit Panomsuwan; Tomonaga Ueno; Hiroharu Yui; Jun Nakamura; Nagahiro Saito
Scholarly book, English, Contributor, Section 7. Solution Plasma Reactions and Materials Synthesis, Wiley, Feb. 2019, 9783527802722 - グラフェンの機能と応用展望《普及版》
中村淳
Scholarly book, Japanese, Joint work, 第４章：酸化グラフェンとコンポジット材料の電子状態, シー・エム・シー出版, 08 Sep. 2015, 9784781310305 - 応用物理分野のアカデミック・ロードマップ（改訂版）
荒川泰彦
Japanese, Joint work, No.19 人材育成, 応用物理学会 ISBN 978-4-86348-073-5, Mar. 2010 - 応用物理分野の発展史マップ
荒川泰彦
Japanese, Joint work, No.19 人材育成, 応用物理学会 ISBN 978-4-86348-074-2, Mar. 2010 - グラフェンの機能と応用展望
中村淳他
Scholarly book, Japanese, Joint work, 第４章：酸化グラフェンとコンポジット材料の電子状態, シー・エム・シー出版, Jul. 2009, 9784781301464 - 応用物理分野のアカデミック・ロードマップの作成報告書 ISBN 978-4-903968-50-6
応用物理学会編
Japanese, Joint work, No.18人材育成, （社）応用物理学会, Mar. 2008 - 学術会議叢書１２ 「どこまで進んだ男女共同参画」
中村淳
Japanese, Joint work, 若手・女性研究者の研究環境, （財）日本学術協力財団, Sep. 2006 - 新訂版・表面科学の基礎と応用
中村淳
Japanese, Joint work, エヌ・ティー・エス, Jun. 2004
Lectures, oral presentations, etc.
- Systematic Variation of Oxygen Reduction Reaction Activity with the Number of Nitrogen Dopants in Iron Azaphthalocyanine
T.Morishima; A.Sumiyoshi; R.C.Betancour; S.Sato; J.Nakamura
Oral presentation, English, The 31st PPC Symposium on Petroleum, Petrochemicals, and Polymers and The 16th Research Symposium on Petrochemical and Materials Technology (PPC & PETROMAT SYMPOSIUM 2025), Peer-reviewed
25 Jun. 2025
26 Jun. 2025- 27 Jun. 2025 - B-doped fullerene as a high-performance metal-free electrocatalyst for CO reduction reaction
Jun Nakamura
Invited oral presentation, English, The 31st PPC Symposium on Petroleum, Petrochemicals, and Polymers and The 16th Research Symposium on Petrochemical and Materials Technology (PPC & PETROMAT SYMPOSIUM 2025), Invited
25 Jun. 2025
26 Jun. 2025- 27 Jun. 2025 - 窒素ドープグラフェンの酸素還元活性に及ぼす基板の影響
佐藤翔太; 髙嶋太一; 中村淳
Oral presentation, 第72回応用物理学会春季学術講演会, Peer-reviewed
15 Mar. 2025
14 Mar. 2025- 17 Mar. 2025 - Materials design of non-precious metal catalysts for CO reduction
Jun Nakamura
Invited oral presentation, English, 7th International Conference on Materials Science and Nanotechnology 2025 (MSNANO-7), Invited, Pakistan, International conference, with international co-author(s)
18 Feb. 2025
17 Feb. 2025- 19 Feb. 2025 - Simulation for the in-plane surface dipole moment distribution of the Si surface using DFT calculations
A.Sumiyoshi; K.Yamasue; Y.Cho; J.Nakamura
Oral presentation, English, 2nd International Colloquium on Scanning Probe Microsopy (ICSPM-32), Peer-reviewed
18 Nov. 2024
18 Nov. 2024- 20 Nov. 2024 - Visualization of the Surface Dipole Moment at the Si(111) Surfaces Using First-Principles Calculations
A.Sumiyoshi; K.Yamasue; Y.Cho; J.Nakamura
Poster presentation, English, The 10th International Symposium on Surface Science (ISSS-10), Kita-kyushu, Peer-reviewed, Japan
21 Oct. 2024
20 Oct. 2024- 24 Oct. 2024 - Role of Computational Simulations in Materials Science and Atomic-Level Materials Design
Jun Nakamura
Public discourse, English, Chulalongkorn University PPC Seminar, Invited, Chulalongkorn University, Bangkok, Thailand, International conference
18 Oct. 2024
18 Oct. 2024- 18 Oct. 2024 - 第一原理計算を用いたSi(111)-(7x7)表面における表面双極子の可視化
住吉晶; 山末耕平; 長康雄; 中村淳
Oral presentation, Japanese, 第85回応用物理学会秋季学術講演会
18 Sep. 2024 - Structure and stability of the Se-treated GaAs(001) surface
A.Ohtake; T.Mano; D.Nakagawa; J.Nakamura
Poster presentation, English, 23rd International Conference on Molecular Beam Epitaxy (ICMBE-23), Peer-reviewed, International conference
12 Sep. 2024 - Electronic and optical properties of graphane
D.Nakagawa; T.Hazama; J.Nakamura
Oral presentation, English, 34th International Conference on Diamond and Carbon Materials (ICDCM-34), Peer-reviewed
04 Sep. 2024
01 Sep. 2024- 05 Sep. 2024 - Designing the properties and functions of materials at an atomic level
Jun Nakamura
Keynote oral presentation, English, 2024 China-Japan Seminar on Science and Technology (Hohhot, China), Invited, Hohot, China, International conference
02 Aug. 2024
02 Aug. 2024- 04 Aug. 2024 - A simulation for the in-plane distribution of the surface dipole moment using DFT calculations (S7-2)
A.Sumiyoshi; K.Yamasue; Y.Cho; J.Nakamura
Oral presentation, English, 31st International Colloquium on Scanning Probe Microscopy (ICSPM31), Peer-reviewed, International conference
08 Dec. 2023
07 Dec. 2023- 08 Dec. 2023 - Edge-Driven Electronic Properties in Bilayer Zigzag SiC Nanoribbons: A First-Principles Study (S4-61)
J.A.Sharifi; R.Sun; J.Nakamura
Poster presentation, English, 31st International Colloquium on Scanning Probe Microscopy (ICSPM31), International conference
07 Dec. 2023
07 Dec. 2023- 08 Dec. 2023 - B-doped fullerene: a high-performance electrocatalyst for the CO reduction reaction (S4-53)
A.F.Ridassepri; Y.Umejima; J.Nakamura
Poster presentation, English, 31st International Colloquium on Scanning Probe Microscopy (ICSPM31), Peer-reviewed
07 Dec. 2023
07 Dec. 2023- 08 Dec. 2023 - Visualization of the Local Dipole Moment at the Si(111)-(2x2) Surface Using DFT Calculations
A. Sumiyoshi; K. Yamasue; Y. Cho; J. Nakamura
Oral presentation, English, AVS 69th International Symposium & Exibition (AVS69), American Vacuum Society, Peer-reviewed, United States, International conference
05 Nov. 2023
05 Nov. 2023- 10 Nov. 2023 - 第一原理計算を用いたSi(111)-(2x2)表面における表面双極子の可視化
住吉晶; 山末耕平; 長康雄; 中村淳
第84回応用物理学会秋季学術講演会
22 Sep. 2023
19 Sep. 2023- 23 Sep. 2023 - Hydrogen storage on tin carbide monolayers with transition metal adatoms
L. G. Arellano; J. Rebollo; F. Salazar; A. Trejo; J. Nakamura
Poster presentation, 36th European Conference on Surface Science (ECOSS36), Lodz, Peer-reviewed, Poland, International conference, with international co-author(s)
30 Aug. 2023
28 Aug. 2023- 01 Sep. 2023 - Structural stability and electronic states of AA and AB stacked II-V compounds
L. G. Arellano; J. Nakamura
Oral presentation, English, 36th European Conference on Surface Science (ECOSS36), Lodz, Peer-reviewed, Poland, International conference, with international co-author(s)
30 Aug. 2023
28 Aug. 2023- 01 Sep. 2023 - Effects of doping and vacancies in the electronic properties of the SiC monolayer: A DFT approach
Lucia Guadalupe; Arellano Sartorius; Ranferi Cancino; Francisco De Santiago; Álvaro Miranda; Jun Nakamura
Oral presentation, English, The 11th Asia Conference on Mechanical and Materials Engineering (ACMME2023), Peer-reviewed
09 Jun. 2023
08 Jun. 2023- 11 Jun. 2023 - Structural stability of 2D II-V compounds
Lucia Guadalupe; Arellano Sartorius; Takayuki Suga; Taichi Hazama; Taichi Takashima; Miguel Cruz-Irisson; Jun Nakamura
Oral presentation, English, Pacific Rim Symposium on Surfaces, Coatings & Interfaces (pacsurf2022), American Vacuum Society (AVS), Hawaii, USA, International conference
14 Dec. 2022 - Size Dependence of the N-Doped Graphene Nanocluster on the Oxygen Reduction Reaction Activity
Haruyuki Matsuyama; Lucia Guadalupe; Arellano Sartorius; Jun Nakamura
Oral presentation, English, Pacific Rim Symposium on Surfaces, Coatings & Interfaces (pacsurf2022), American Vacuum Society (AVS), Hawaii, USA, International conference
13 Dec. 2022 - Effects of substrates on Oxygen Reduction Reaction of Nitrogen-doped Graphene
Taichi Takashima; Jun Nakamura
Oral presentation, English, The 22nd International Vacuum Congress (IVC-22), Sapporo, Japan, International conference
15 Sep. 2022 - B-doped Fullerene as A Novel Monoatomic Catalyst Material for CO Reduction Reaction
Arikasuci Fitonna Ridassepri; Yutaro Umejima; Jun Nakamura
Oral presentation, English, The 22nd International Vacuum Congress (IVC-22), Sapporo, Japan, International conference
15 Sep. 2022 - Theoretical prediction of novel two-dimensional II-V compounds
Lucia Guadalupe; Arellano Sartorius; Takayuki Suga; Miguel Cruz Irisson; Jun Nakamura
Poster presentation, English, The 22nd International Vacuum Congress (IVC-22), Sapporo, Japan, International conference
14 Sep. 2022 - Effects of Spin-Orbit Interaction on Mn Atomic Wire on GaAs(110)
Motoi Hirayama; Jun Nakamura
Poster presentation, English, The 22nd International Vacuum Congress (IVC-22), Sapporo, Japan, International conference
14 Sep. 2022 - Thermodynamical Stability of 2D sp2/sp3 N-doped Carbon Materials
Taichi Hazama; Jun Nakamura
Oral presentation, English, The 22nd International Vacuum Congress (IVC-22), Sapporo, Japan, International conference
12 Sep. 2022 - First-principles Study on Edge-edge Interactions of Bilayer Zigzag SiC Nanoribbons
Jawahir Ali Sharifi; Sun Rongyao; Jun Nakamura
Oral presentation, English, The 22nd International Vacuum Congress (IVC-22), Sapporo, Japan, International conference
12 Sep. 2022 - SnドープSnxSr1-xTiO3の構造相転移メカニズムの第一原理的解析
天野優也; 中村淳; 阿部浩二
Oral presentation, Japanese, 日本物理学会第７７回年次大会, 日本物理学会, オンライン, Domestic conference
16 Mar. 2022 - Carbonaceous material derived from bagasse-waste as anode for Li-ion batteries
Arikasuci Fitonna Ridassepri; Fitria Rahmawati; Agung Tri Wijayanta; Jun Nakamura
Oral presentation, English, The 2nd ECTI Workshop on BEC and the 3rd ASEAN-UEC Workshop, UEC and ECTI, online, International conference
10 Dec. 2021 - Structural stability of II-V compound ultrathin films
Lucia G. Arellano Sartorius; Takayuki Suga; Miguel Cruz-Irisson; Jun Nakamura
Oral presentation, English, The 9th International Symposium on Surface Science (ISSS-9), online, International conference
30 Nov. 2021 - Stacking effect on oxygen reduction reaction of nitrogen-doped graphene
Taichi Takashima; Jun Nakamura
Poster presentation, English, The 9th International Symposium on Surface Science (ISSS-9), online, International conference
30 Nov. 2021 - Edge-edge interactions of bilayer zigzag SiC nanoribbons
孫栄耀; 中村淳
Oral presentation, English, 2021年日本表面真空学会学術講演会, 日本表面真空学会, オンライン, Domestic conference
04 Nov. 2021 - コバルトフタロシアニン分子の一酸化炭素還元触媒能：誘導体化の影響
梅島裕太郎; 中村淳
Oral presentation, Japanese, 2021年日本表面真空学会学術講演会, 日本表面真空学会, オンライン, Domestic conference
03 Nov. 2021 - Derivatization Effect of Cobalt Phthalocyanine on the Catalytic Activity for Carbon Monoxide Reduction
Y. Umejima; J.Nakamura
Oral presentation, English, AVS 67th International Symposium & Exhibition, American Vacuum Society, online, International conference
25 Oct. 2021 - Theoretical study of li-decorated b-doped silicon carbide monolayer for hydrogen storage
Lucia G. Arellano Sartorius; Miguel Cruz-Irisson; Jun Nakamura
Poster presentation, English, 12th International Conference on Hydrogen Production (ICH2P-2021), online, International conference
19 Sep. 2021 - Structural stability of 2D II-V compounds
L.Arellano; T.Suga; M.Cruz-Irisson; Jun Nakamura
Oral presentation, English, 第８２回応用物理学会秋季学術講演会, 応用物理学会, オンライン, Domestic conference
13 Sep. 2021 - Interaction between the edge states of bilayer zigzag SiC nanoribbons
Rongyao Sun; Jun Nakamura
Oral presentation, English, 第８２回応用物理学会秋季学術講演会, 応用物理学会, オンライン, Domestic conference
12 Sep. 2021 - コバルトフタロシアニンの誘導体化が一酸化炭素還元触媒能に及ぼす影響
梅島裕太郎; 中村淳
Oral presentation, Japanese, 第８２回応用物理学会秋季学術講演会, 応用物理学会, オンライン, Domestic conference
12 Sep. 2021 - 有限電場下の第一原理計算による局所誘電率評価の試み
中村淳
Public discourse, Japanese, 東北大学電気通信研究所講演会, Invited, Domestic conference
15 Jul. 2021 - Hydrogen Storage on Metal Decorated GeC Monolayer
L.G. Arellano; A. Miranda; M. Cruz-Irisson; J. Nakamura
Poster presentation, English, Virtual Irago Conference 2020, Chofu, International conference
11 Dec. 2020 - 2D II-V compounds: A mechanism of structural stabilization
T.Suga; J. Nakamura
Poster presentation, English, Virtual Irago Conference 2020, Chofu, International conference
11 Dec. 2020 - Derivatization effect of Metal Phthalocyanine on the catalytic activity for carbon monoxide reduction
Y.Umejima; J. Nakamura
Poster presentation, English, Virtual Irago Conference 2020, Chofu, International conference
11 Dec. 2020 - Oxygen Reduction Reaction Activity of Nitrogen-Doped Graphene with a Stone-Wales Defect
X.Lu; J. Nakamura
Poster presentation, English, Virtual Irago Conference 2020, Chofu, International conference
11 Dec. 2020 - Stacking effect of double-layered zigzag graphene nanoribbons
R.Sun; J. Nakamura
Poster presentation, English, Virtual Irago Conference 2020, Chofu, International conference
11 Dec. 2020 - 窒素ドープグラフェンナノクラスターの酸素還元反応における触媒性 : 最適なクラスターサイズの提案
松山治薫; 中村淳
Oral presentation, Japanese, 第６７回応用物理学会春季学術講演会, 応用物理学会, 東京（上智大学）, Domestic conference
17 Mar. 2020 - SnxSr1-xTiO3の相転移と局所構造
田中広敏; 小貝侑弘; 中村淳; 阿部浩二; 中野諭人
Poster presentation, Japanese, 日本物理学会第７５回年次大会, 日本物理学会, Domestic conference
17 Mar. 2020 - Oxygen reduction reaction for Fe phthalocyanine derivative
H.Matsuyama; H.Abe; K.Ito; H.Yabu; J.Nakamura
Poster presentation, English, Irago Conference 2019, The University of Electro-Communications, Tokyo, Japan, International conference
28 Oct. 2019 - Edge-edge interaction in bilayer zigzag graphene nanoribbons
T.Asano; J.Nakamura
Poster presentation, English, Irago Conference 2019, The University of Electro-Communications, Tokyo, Japan, International conference
28 Oct. 2019 - Structural stability of twisted bilayer graphene nano ribbons
S.Chiba; J.Nakamura
Poster presentation, English, Irago Conference 2019, The University of Electro-Communications, Tokyo, Japan, International conference
28 Oct. 2019 - Chalcogen passivation of GaAs(111)B surfaces
T.Suga; S.Goto; A.Ohtake; J.Nakamura
Poster presentation, English, Irago Conference 2019, The University of Electro-Communications, Tokyo, Japan, International conference
28 Oct. 2019 - Mechanism of chalcogen passivation of GaAs surfaces
T. Suga; S. Goto; A. Ohtake; J. Nakamura
Oral presentation, English, AVS 66th International Symposium & Exhibition, AVS (American Vacuum Society), Columbus, USA, International conference
22 Oct. 2019 - Structural stability of graphene nanoflakes: From the view point of aromaticity
M. Ushirozako; H. Matsuyama; A. Akaishi; J. Nakamura
Oral presentation, English, AVS 66th International Symposium & Exhibition, AVS (American Vacuum Society), Columbus, USA, International conference
21 Oct. 2019 - Structural stability of graphene nanoflakes: from the view point of aromaticity
Jun Nakamura
Keynote oral presentation, English, Sociedad Mexicana de Física, LXII Congreso Nacional de Física, Invited, Sociedad Mexicana de Física, Tabasco, Mexico, International conference
11 Oct. 2019 - 鉄フタロシアニンの誘導体化による酸素還元反応の高活性化メカニズム
松山治薫; 阿部博弥; 伊藤晃寿; 藪浩; 中村淳
Oral presentation, Japanese, 第８０回応用物理学会秋季学術講演会, 応用物理学会, 札幌, Domestic conference
17 Sep. 2019 - Edge-state-induced stacking of zigzag graphene nano-ribbons
T.Asano; J.Nakamura
Oral presentation, English, The 17th International Conference on the Formation of Semiconductor Interfaces (ICFSI-17), Shanghai Jiao Tong University, Shanghai, China, International conference
25 Jun. 2019 - Bi-layer formation of water on graphene
A.Akaishi; T.Yonemaru; J.Nakamura
Oral presentation, English, The 17th International Conference on the Formation of Semiconductor Interfaces (ICFSI-17), Shanghai Jiao Tong University, Shanghai, China, International conference
24 Jun. 2019 - Functionalization of graphene by N doping: Application to the oxygen reduction reaction
H.Matsuyama; J.Nakamura
Oral presentation, English, The 17th International Conference on the Formation of Semiconductor Interfaces (ICFSI-17), Shanghai Jiao Tong University, Shanghai, China, International conference
24 Jun. 2019 - Chalcogen passivation of GaAs(111)B surfaces
T.Suga; S.Goto; A.Ohtake; J.Nakamura
Poster presentation, English, Compound Semiconductor Week 2019, Compound Semiconductor Week, Nara, Japan, https://www.csw-jpn.org, International conference
20 May 2019 - Water wettability of graphene
Jun Nakamura
Keynote oral presentation, English, Sociedad Mexicana de Física Reunión Anual de la División de Estado Sólido 2019, Invited, Sociedad Mexicana de Física, Papantla, Veracruz, Mexico, International conference
02 May 2019 - Actividad catalítica del grafeno dopado con boro para reacciones de reducción de oxígeno
Lucia Guadalupe; Arellano Sartorius; Jun Nakamura
Poster presentation, Spanish, Castilian, Sociedad Mexicana de Física Reunión Anual de la División de Estado Sólido 2019, Sociedad Mexicana de Física, Papantla, Veracruz, Mexico, International conference
02 May 2019 - 窒素ドープグラフェンナノリボンにおける酸素還元反応
松山治薫; 五味駿一; 中村淳
Oral presentation, Japanese, 第６６回応用物理学会春季学術講演会, 応用物理学会, 東工大大岡山キャンパス, Domestic conference
09 Mar. 2019 - Oxygen Reduction Reaction on Fullerene
菊地庸介; 中村淳
Poster presentation, Japanese, 東京理科大学ナノカーボン研究部⾨2018年度成果報告会&第4回東京理科大学-電気通信大学合同研究会, 東京理科大学、電気通信大学, 東京理科大学神楽坂キャンパス, Domestic conference
01 Mar. 2019 - Structural stability of the Se- or S-treated GaAs (111) B surface
後藤俊治; 中村淳
Poster presentation, Japanese, 東京理科大学ナノカーボン研究部⾨2018年度成果報告会&第4回東京理科大学-電気通信大学合同研究会, 東京理科大学、電気通信大学, 東京理科大学神楽坂キャンパス, Domestic conference
01 Mar. 2019 - GaAs(111)B表面構造の分子分圧依存性
須賀隆之; 後藤俊治; 中村淳
Poster presentation, Japanese, 東京理科大学ナノカーボン研究部⾨2018年度成果報告会&第4回東京理科大学-電気通信大学合同研究会, 東京理科大学、電気通信大学, 東京理科大学神楽坂キャンパス, Domestic conference
01 Mar. 2019 - カルコゲンによるGaAs表面の不働態化機構
中村淳
Poster presentation, Japanese, 東京理科大学ナノカーボン研究部⾨2018年度成果報告会&第4回東京理科大学-電気通信大学合同研究会, 東京理科大学、電気通信大学, 東京理科大学神楽坂キャンパス, Domestic conference
01 Mar. 2019 - Oxygen Reduction Reaction Mechanism for N-doped Graphene Nanoribbons
H. Matsuyama; S. Gomi; J.Nakamura
Poster presentation, English, Pacific Rim Symposium on Surfaces, Coatings & Interfaces (pacsurf2018), American Vacuum Society, Hawaii, USA, International conference
05 Dec. 2018 - グラフェンは疎水性か？
中村淳
Keynote oral presentation, Japanese, 第３２回ダイヤモンドシンポジウム, Invited, ダイヤモンドフォーラム, 調布, Domestic conference
15 Nov. 2018 - 窒素ドープグラフェンナノクラスターの酸素還元反応に対する触媒性
松山治薫; 中村淳
Oral presentation, Japanese, 第３２回ダイヤモンドシンポジウム, ダイヤモンドフォーラム, 調布, Domestic conference
15 Nov. 2018 - グラフェンは疎水性か？
中村淳
Public discourse, Japanese, 千葉大学物性セミナー, Invited, 千葉大学, 千葉, Domestic conference
08 Nov. 2018 - Oxygen reduction reaction activity for N-doped graphene nanoclusters
H. Matsuyama; J. Nakamura
Poster presentation, English, The Irago Conference 2018, The University of Electro-Communications (UEC-Tokyo), Shinjuku, Tokyo, International conference
01 Nov. 2018 - Structural stability of the Se- or S-treated GaAs (111) B surface
S. Chiba; J. Nakamura
Poster presentation, English, The Irago Conference 2018, The University of Electro-Communications (UEC-Tokyo), Shinjuku, Tokyo, International conference
01 Nov. 2018 - Systematic evaluation of the structural stability of nitrogen-doped graphene
S. Goto; A. Ohtake; J. Nakamura
Poster presentation, English, The Irago Conference 2018, The University of Electro-Communications (UEC-Tokyo), Shinjuku, Tokyo, International conference
01 Nov. 2018 - Oxygen Reduction Reaction on fullerene
Y. Kikuchi; J. Nakamura
Poster presentation, English, The Irago Conference 2018, The University of Electro-Communications (UEC-Tokyo), Shinjuku, Tokyo, International conference
01 Nov. 2018 - Na- and Be-decorated silicon carbide monolayer for H2 storage: a DFT study
L. G. Arellano; F. de Santiago; A. Miranda; M. Cruz-Irisson; J. Nakamura
Poster presentation, English, The Irago Conference 2018, The University of Electro-Communications (UEC-Tokyo), Shinjuku, Tokyo, International conference
01 Nov. 2018 - Edge-state-induced stacking of zigzag graphene nano-ribbons
T. Asano; J. Nakamura
Poster presentation, English, The Irago Conference 2018, The University of Electro-Communications (UEC-Tokyo), Shinjuku, Tokyo, International conference
01 Nov. 2018 - Double Layer Formation of Water Molecules on Graphene
A. Akaishi; T. Yonemaru; J. Nakamura
Oral presentation, English, American Vacuum Society 65th International Symposium & Exhibition (AVS-65), American Vacuum Society, Long Beach, USA, International conference
24 Oct. 2018 - Stabilization Mechanism of the Se- or S-treated GaAs(111)B Surface
S. Goto; A. Ohtake; J. Nakamura
Oral presentation, English, American Vacuum Society 65th International Symposium & Exhibition (AVS-65), American Vacuum Society, Long Beach, USA, International conference
24 Oct. 2018 - Oxygen Reduction Reaction on Fullerene
Y. Kikuchi; J. Nakamura
Oral presentation, English, American Vacuum Society 65th International Symposium & Exhibition (AVS-65), American Vacuum Society, Long Beach, USA, International conference
23 Oct. 2018 - 窒素ドープグラフェンのベーサル面における酸素還元反応
松山治薫; 中村淳
Oral presentation, Japanese, 第７９回応用物理学会秋季学術講演会, 応用物理学会, 名古屋国際会議場, Domestic conference
21 Sep. 2018 - 窒素ドープグラフェンの構造安定性の系統的評価
千葉紗彩; 中村淳
Oral presentation, Japanese, 第７９回応用物理学会秋季学術講演会, 応用物理学会, 名古屋国際会議場, Domestic conference
21 Sep. 2018 - ２層ジグザググラフェンナノリボンのエッジ状態間相互作用
浅野大造; 中村淳
Oral presentation, Japanese, 第７９回応用物理学会秋季学術講演会, 応用物理学会, 名古屋国際会議場, Domestic conference
21 Sep. 2018 - 酸素還元反応におけるフラーレンの触媒性
菊地庸介; 中村淳
Oral presentation, Japanese, 第７９回応用物理学会秋季学術講演会, 応用物理学会, 名古屋国際会議場, Domestic conference
19 Sep. 2018 - S処理された GaAs(111)B 表面の構造安定性
後藤俊治; 大竹晃浩; 中村淳
Oral presentation, Japanese, 第７９回応用物理学会秋季学術講演会, 応用物理学会, 名古屋国際会議場, Domestic conference
18 Sep. 2018 - Formation of Water Layer on Graphene Surfaces
Jun Nakamura
Invited oral presentation, English, International Symposium of Water Frontier Science & Technology Research Center, Water on Materials Surface 2018 (WMS2018), Invited, Tokyo University of Science, Tokyo, Japan, https://w-fst.tus.ac.jp/wms2018, International conference
27 Jul. 2018 - Water layer formation on graphene
Jun Nakamura
Invited oral presentation, English, The 6th International Workshop on Solution Plasma and Molecdular Technology (SPM6), Invited, SPM Organizing Committee, Gdansk, Poland, International conference
05 Jun. 2018 - Edge-state-induced stacking of zigzag graphene nano-ribbons
T. Asano; J. Nakamura
Oral presentation, English, The 6th International Workshop on Solution Plasma and Molecdular Technology (SPM6), SPM Organizing Committee, Gdansk, Poland, International conference
05 Jun. 2018 - Systematic evaluation of the structural stability of N-doped graphene
S. Chiba; J. Nakamura
Oral presentation, English, The 6th International Workshop on Solution Plasma and Molecdular Technology (SPM6), SPM Organizing Committee, Gdansk, Poland, International conference
05 Jun. 2018 - Intra- and inter-layer magnetic interactions in a van der Waals crystal
M. Kawashima; A. Akaishi; J. Nakamura
Oral presentation, English, The 6th International Workshop on Solution Plasma and Molecdular Technology (SPM6), SPM Organizing Committee, Gdansk, Poland, International conference
05 Jun. 2018 - Se 処理された GaAs(111)B 表面の構造安定性
後藤俊治; 大竹晃浩; 赤石暁; 中村淳
Oral presentation, Japanese, 第６５回応用物理学会春季学術講演会, 応用物理学会, 新宿（早稲田大学）, Domestic conference
17 Mar. 2018 - Intra- and inter-layer magnetic interactions in a van der Waals crystal
M. Kawashima; A. Akaishi; J. Nakamura
Poster presentation, English, 2018 DPG Joint meeting of the DPG and EPS Condesed Matter Divisions, DPG and EPS Condesed Matter Divisions, Berlin, Germany, International conference
13 Mar. 2018 - LiMO2(M=Mn,Co,Ni)の熱力学的安定性および磁気的特性の第一原理計算による評価
宮本惇; 中村淳
Poster presentation, Japanese, 電気通信大学ナノトライボロジー研究センター第２回シンポジウム「物性科学から工学へ」, 電気通信大学ナノトライボロジー研究センター, 調布, Domestic conference
07 Mar. 2018 - Structural stability of the Se-treated GaAs(111)B surface
後藤俊治; 中村淳
Poster presentation, Japanese, 電気通信大学ナノトライボロジー研究センター第２回シンポジウム「物性科学から工学へ」, 電気通信大学ナノトライボロジー研究センター, 調布, Domestic conference
07 Mar. 2018 - 窒素ドープグラフェン上の酸素還元反応の窒素配位依存性
松山治薫; 赤石暁; 中村淳
Poster presentation, Japanese, 電気通信大学ナノトライボロジー研究センター第２回シンポジウム「物性科学から工学へ」, 電気通信大学ナノトライボロジー研究センター, 調布, Domestic conference
07 Mar. 2018 - 窒素ドープグラフェンの構造安定性に局所的窒素配列が及ぼす影響
千葉紗彩; 赤石暁; 中村淳
Poster presentation, Japanese, 電気通信大学ナノトライボロジー研究センター第２回シンポジウム「物性科学から工学へ」, 電気通信大学ナノトライボロジー研究センター, 調布, Domestic conference
07 Mar. 2018 - InGaN混晶中におけるIn-In相互作用
畑木尚; 中村淳
Poster presentation, Japanese, 電気通信大学ナノトライボロジー研究センター第２回シンポジウム「物性科学から工学へ」, 電気通信大学ナノトライボロジー研究センター, 調布, Domestic conference
07 Mar. 2018 - Effect s of Edge Structures on the Oxygen Reduction Reaction Activity of Nitrogen-doped Graphene Nanoribbons
S. Gomi; H. Matsuyama; A. Akaishi; J. Nakamura
Oral presentation, English, 45th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-45), American Vacuum Society, Kailua-Kona, USA, International conference
16 Jan. 2018 - Quantitative Relation between the Structural Stability and the Aromaticity of Graphene Nanoflakes
M.Ushirozako; H. Matsuyama; A. Akaishi; J. Nakamura
Oral presentation, English, 45th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-45), American Vacuum Society, Kailua-Kona, USA, International conference
16 Jan. 2018 - Formation of Water Bilayer on Graphene Surfaces
A. Akaishi; J. Nakamura
Oral presentation, English, 45th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-45), American Vacuum Society, Kailua-Kona, USA, International conference
16 Jan. 2018 - Structural stability of the Se-treated GaAs(111)B surface
S. Goto; A. Ohtake; A. Akaishi; J. Nakamura
Oral presentation, English, The Irago Conference 2017, The University of Electro-Communications (UEC-Tokyo), Chofu, Tokyo, International conference
01 Nov. 2017 - Softly-confined water cluster between free standing graphene sheets
R. Agustian; A. Akaishi; J. Nakamura
Oral presentation, English, The Irago Conference 2017, The University of Electro-Communications (UEC-Tokyo), Chofu, Tokyo, International conference
01 Nov. 2017 - Relationship between Stability and Aromaticity of Graphene Nanoflakes
A. Akaishi; M. Ushirozako; H. Matsuyama; J. Nakamura
Poster presentation, English, The Irago Conference 2017, The University of Electro-Communications (UEC-Tokyo), Chofu, Tokyo, International conference
01 Nov. 2017 - Effect of edge structures on the oxygen reduction reaction activity of nitrogen-doped graphene nanoribbons
S. Gomi; H. Matsuyama; A. Akaishi; J. Nakamura
Poster presentation, English, The Irago Conference 2017, The University of Electro-Communications (UEC-Tokyo), Chofu, Tokyo, International conference
01 Nov. 2017 - Oxygen Reduction Reaction on N-doped Graphene Nanoclusters: Dependence on Nitrogen Configuration
H. Matsuyama; A. Akaishi; J. Nakamura
Poster presentation, English, International Symposium on Novel Energy Nanomaterials, Catalysts and Surfaces for Future Earth (NENCS), The University of Electro-Communications (UEC-Tokyo), Chofu, Tokyo, International conference
29 Oct. 2017 - Anomalous Enhancement of Seebeck Coefficients fo the Graphene/h-BN Composites
J. Nakamura; A. Akaishi
Oral presentation, English, International Symposium on Novel Energy Nanomaterials, Catalysts and Surfaces for Future Earth (NENCS), The University of Electro-Communications (UEC-Tokyo), Chofu, Tokyo, International conference
28 Oct. 2017 - Reaction Selectivity for Oxygen Reduction of N-Doped Graphene Nanoclusters
H. Matsuyama; A. Akaishi; J. Nakamura
Oral presentation, English, 232nd ECS Meeting, The Electrochemical Society, National Harbor, MD, USA, International conference
01 Oct. 2017 - 窒素ドープグラフェンナノリボンの酸素還元触媒能に及ぼすエッジの効果
五味駿一; 中村淳
Poster presentation, Japanese, 電気通信大学ナノトライボロジー研究センター第１回シンポジウム「表面界面の科学と摩擦」, 電気通信大学ナノトライボロジー研究センター, 調布, Domestic conference
30 Sep. 2017 - グラフェン層間に拘束された水分子クラスターの動的構造評価
Rifan Agustian; 中村淳
Poster presentation, Japanese, 電気通信大学ナノトライボロジー研究センター第１回シンポジウム「表面界面の科学と摩擦」, 電気通信大学ナノトライボロジー研究センター, 調布, Domestic conference
30 Sep. 2017 - Se処理したGaAs(111)B表面の構造安定性
後藤俊治; 中村淳
Poster presentation, Japanese, 電気通信大学ナノトライボロジー研究センター第１回シンポジウム「表面界面の科学と摩擦」, 電気通信大学ナノトライボロジー研究センター, 調布, Domestic conference
30 Sep. 2017 - グラフェン界面の水のダイナミクス
赤石暁; 中村淳
Invited oral presentation, Japanese, 電気通信大学ナノトライボロジー研究センター第１回シンポジウム「表面界面の科学と摩擦」, Invited, 電気通信大学ナノトライボロジー研究センター, 調布, Domestic conference
30 Sep. 2017 - グラフェンナノフレークの構造安定性と芳香族性
赤石暁; 後迫真人; 松山治薫; 中村淳
Oral presentation, Japanese, 第７８回応用物理学会秋季学術講演会, 応用物理学会, 福岡, Domestic conference
07 Sep. 2017 - Two- to Three-dimensional Transition of Confined Water between Freestanding Graphene Sheets
Rifan Agustian; Akira Akaishi; Jun Nakamura
Oral presentation, English, 第７８回応用物理学会秋季学術講演会, 応用物理学会, 福岡, Domestic conference
07 Sep. 2017 - 酸素還元反応における窒素ドープグラフェンナノクラスターの触媒性：窒素配位依存性
松山治薫; 赤石暁; 中村淳
Oral presentation, Japanese, 第７８回応用物理学会秋季学術講演会, 応用物理学会, 福岡, Domestic conference
07 Sep. 2017 - Se処理GaAs(111)B表面の安定化機構
大竹晃浩; 後藤俊治; 中村淳
Oral presentation, Japanese, 第７８回応用物理学会秋季学術講演会, 応用物理学会, 福岡, Domestic conference
05 Sep. 2017 - Structural Stability of Graphene Nanoflakes: from the View Point of Aromaticity
J. Nakamura; M. Ushirozako; H. Matsuyama; A. Akaishi
Invited oral presentation, English, The 5th International Workshop on Solution Plasma and Molecdular Technology (SPM5), Invited, Leibnitz Institute for Plasma Science and Technologis, Greifswald, Germany, International conference
29 Jun. 2017 - Two- to Three-Dimentional Transition of Softly Confined Water Between Graphene Sheets
R. Agustian; A. Akaishi; J. Nakamura
Oral presentation, English, The 5th International Workshop on Solution Plasma and Molecdular Technology (SPM5), Leipnitz Institute for Plasma Science and Technology, Greifswald, Germany, International conference
27 Jun. 2017 - 二軸性歪み下におけるGaSbの電気伝導率の面方位依存性
岸本秀輝; 赤石暁; 中村淳
Oral presentation, Japanese, 第６４回応用物理学会春季学術講演会, 応用物理学会, パシフィコ横浜, Domestic conference
17 Mar. 2017 - グラフェン表面における水の吸着と構造化
赤石暁; 中村淳
Invited oral presentation, Japanese, 日本化学会第９７春季年会, Invited, 日本化学会, 慶応大日吉, Domestic conference
16 Mar. 2017 - グラフェン上の水２重層構造
赤石暁; 中村淳
Poster presentation, Japanese, ナノトライボロジー研究センター開設シンポジウム, 電気通信大学ナノトライボロジー研究センター, 電気通信大学, Domestic conference
08 Mar. 2017 - 窒素ドープグラフェンナノクラスター上における酸素還元反応の窒素原子位置依存性
松山治薫; 赤石暁; 中村淳
Poster presentation, Japanese, ナノトライボロジー研究センター開設シンポジウム, 電気通信大学ナノトライボロジー研究センター, 電気通信大学, Domestic conference
08 Mar. 2017 - 窒素ドープカイラルエッジグラフェンナノリボンの構造安定性
菊地庸介; 赤石暁; 中村淳
Poster presentation, Japanese, ナノトライボロジー研究センター開設シンポジウム, 電気通信大学ナノトライボロジー研究センター, 電気通信大学, Domestic conference
08 Mar. 2017 - Se吸着GaAs(111)B表面の構造安定性
後藤俊治; 赤石暁; 中村淳
Poster presentation, Japanese, ナノトライボロジー研究センター開設シンポジウム, 電気通信大学ナノトライボロジー研究センター, 電気通信大学, Domestic conference
08 Mar. 2017 - 曲率を有するグラフェン表面における水ナノクラスターの吸着特性
玉村優佳; 赤石暁; 中村淳
Poster presentation, Japanese, ナノトライボロジー研究センター開設シンポジウム, 電気通信大学ナノトライボロジー研究センター, 電気通信大学, Domestic conference
08 Mar. 2017 - Mechanism of Stabilization and Magnetization of Impurity-doped Zigzag Graphene Naoribbons
Y. Uchida; S.-I. Gomi; H. Matsuyama; A. Akaishi; J. Nakamura
Oral presentation, English, 44th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-44), American Vacuum Society, Santa Fe, USA, International conference
16 Jan. 2017 - Site-dependent Oxygen Reduction Reaction of N-doped Graphene Nanoclusters
H. Matsuyama; S.-I. Gomi; M. Ushirozako; A. Akaishi; J. Nakamura
Oral presentation, English, 44th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-44), American Vacuum Society, Santa Fe, USA, International conference
16 Jan. 2017 - 窒素ドープグラフェンナノリボンの酸素還元反応における触媒性
五味駿一; 松山治薫; 赤石暁; 中村淳
Oral presentation, Japanese, ２０１６年真空・表面科学合同講演会, 日本真空協会、日本表面科学会, 名古屋, Domestic conference
29 Nov. 2016 - 酸素還元反応における窒素ドープグラフェンナノクラスターの触媒性
松山治薫; 田中崇太郎; 赤石暁; 中村淳
Oral presentation, Japanese, ２０１６年真空・表面科学合同講演会, 日本真空協会、日本表面科学会, 名古屋, Domestic conference
29 Nov. 2016 - グラフェンナノリボンの物性
中村淳
Invited oral presentation, Japanese, 日本磁気学会 第６２回磁気工学専門研究会, Invited, 日本磁気学会, 田町, Domestic conference
18 Nov. 2016 - Electrical conductivity of the biaxally-strained GaSb
H. Kishimoto; T. Hatayama; A. Akaishi; J. Nakamura
Poster presentation, English, The Irago Conference 2016, International conference
01 Nov. 2016 - Oxygen reduction reaction on nitrogen-doped graphene nanoclusters
H. Matsuyama; S. Tanaka; A. Akaishi; J. Nakamura
Poster presentation, English, The Irago Conference 2016, International conference
01 Nov. 2016 - Oxygen reduction reaction on nitrogen-doped graphene nanoribbons
S.-I. Gomi; H. Matsuyama; A. Akaishi; J. Nakamura
Poster presentation, English, The Irago Conference 2016, International conference
01 Nov. 2016 - Formation of water layers on graphene surfaces
A. Akaishi; J. Nakamura
Poster presentation, English, The Irago Conference 2016, International conference
01 Nov. 2016 - Structural stability of graphene nanoflakes
M. Ushirozako; A. Akaishi; J. Nakamura
Poster presentation, English, The Irago Conference 2016, International conference
01 Nov. 2016 - Electrical conductivity of the biaxially-strained GaSb(111) and GaSb(001)
H. Kishimoto; T. Hatayama; A. Akaishi; J.Nakamura
Poster presentation, English, 13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN 2016), Rome, Italy, International conference
12 Oct. 2016 - Structural stability of graphene nanoflakes
M.Ushirozako; A. Akaishi; J.Nakamura
Poster presentation, English, 13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN 2016), Rome, Italy, International conference
12 Oct. 2016 - Interfacial water layer on doped graphene surfaces
A. Akaishi; J.Nakamura
Oral presentation, English, 13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN 2016), Rome, Italy, International conference
12 Oct. 2016 - GaSbの電気伝導率の二軸性歪み依存性
岸本秀輝; 畑山拓也; 赤石暁; 中村淳
Oral presentation, Japanese, 第７７回応用物理学会秋季学術講演会, 応用物理学会, 新潟, Domestic conference
16 Sep. 2016 - 窒素ドープグラフェンナノクラスター上の酸素還元反応
松山治薫; 田中崇太郎; 赤石暁; 中村淳
Oral presentation, Japanese, 第７７回応用物理学会秋季学術講演会, 応用物理学会, 新潟, Domestic conference
15 Sep. 2016 - Electrical conductivity of the biaxially-strained GaSb(111) films
T. Hatayama; H. Kishimoto; A. Akaishi; J.Nakamura
Poster presentation, English, The 43rd International Symposium on Compound Semiconductors (ISCS 2016), CSW2016, Toyama, Japan, International conference
27 Jun. 2016 - Water adsorption on doped graphene surfaces
A. Akaishi; J.Nakamura
Oral presentation, English, 4th International Workshop on Solution Plasma and Molecular Technologies (SPM-4), SPM Organizing Committee, Pilsen, Czech Republic, International conference
09 Jun. 2016 - Mechanism of Stabilization and Magnetization of Impurity-doped Zigzag Graphene Nanoribbons
J.Nakamura; Y.Uchida; S.Gomi; H.Matsuyama; A.Akaishi
Invited oral presentation, English, 4th International Workshop on Solution Plasma and Molecular Technologies (SPM-4), Invited, SPM Organizing Committee, Pilsen, Czech Republic, International conference
09 Jun. 2016 - Effects of edge structures on oxygen reduction reaction for nitrogen-doped graphene nanoclusters
H.Matsuyama; S.Tanaka; A.Akaishi; J.Nakamura
Oral presentation, English, 4th International Workshop on Solution Plasma and Molecular Technologies (SPM-4), SPM Organizing Committee, Pilsen, Czech Republic, International conference
08 Jun. 2016 - Anomalous enhancement of Seebeck coefficients for the graphene/h-BN composites
Jun Nakamura; Yushi Yokomizo
Invited oral presentation, English, EMN Meeting on Carbon Nanostructures, Invited, EMN, Honolulu, Hawaii (USA), International conference
29 Mar. 2016 - グラフェンの大気由来吸着物
日比野浩樹; 小川友以; 高村真琴; Wang Shengnan; 関根佳明; 赤石暁; 中村淳
Oral presentation, Japanese, 第６３回応用物理学会春季学術講演会, 応用物理学会, 大岡山, Domestic conference
22 Mar. 2016 - グラフェン表面における水の吸着と構造
赤石暁; 中村淳
Invited oral presentation, Japanese, 合同若手研究会 -表面・界面現象の新展開：吸着・物質移動・エネルギー散逸-, Invited, 東京理科大学、電気通信大学, 東京理科大学, Domestic conference
14 Mar. 2016 - Mn吸着GaAs(001)-(2x2)表面の局所無秩序構造
船附顕汰; 赤石暁; 中村淳
Poster presentation, Japanese, 合同若手研究会 -表面・界面現象の新展開：吸着・物質移動・エネルギー散逸-, 東京理科大学、電気通信大学, 東京理科大学, Domestic conference
14 Mar. 2016 - GaSb(111)薄膜の電気伝導率の歪み依存性
岸本秀輝; 畑山拓也; 赤石暁; 中村淳
Poster presentation, Japanese, 合同若手研究会 -表面・界面現象の新展開：吸着・物質移動・エネルギー散逸-, 東京理科大学、電気通信大学, 東京理科大学, Domestic conference
14 Mar. 2016 - 窒素ドープグラフェン上における酸素還元反応
松山治薫; 田中崇太郎; 赤石暁; 中村淳
Poster presentation, Japanese, 合同若手研究会 -表面・界面現象の新展開：吸着・物質移動・エネルギー散逸-, 東京理科大学、電気通信大学, 東京理科大学, Domestic conference
14 Mar. 2016 - グラフェン表面の水の二重層構造
赤石暁; 中村淳
Oral presentation, Japanese, 第２５回日本ＭＲＳ年次大会, 日本ＭＲＳ, 横浜, Domestic conference
08 Dec. 2015 - 不純物ドープグラフェンナノリボンの安定化機構
内田優希; 赤石暁; 中村淳
Oral presentation, Japanese, 第２５回日本ＭＲＳ年次大会, 日本ＭＲＳ, 横浜, Domestic conference
08 Dec. 2015 - 窒素ドープグラフェン上の酸素還元触媒の第一原理計算
松山治薫; 市川諒英; 赤石暁; 中村淳
Poster presentation, Japanese, 第２５回日本ＭＲＳ年次大会, 日本ＭＲＳ, 横浜, Domestic conference
08 Dec. 2015 - グラフェンナノフレークの構造安定性
後迫真人; 赤石暁; 中村淳
Poster presentation, Japanese, 第２５回日本ＭＲＳ年次大会, 日本ＭＲＳ, 横浜, Domestic conference
08 Dec. 2015 - グラフェンおよびグラフェンナノリボンのバリスティックフォノン熱伝導
中村淳
Invited oral presentation, Japanese, 第３５回表面科学学術講演会, Invited, 日本表面科学会, つくば, Domestic conference
01 Dec. 2015 - 窒素ドープグラフェン表面における酸素還元反応：窒素濃度依存性
松山治薫; 市川諒英; 赤石暁; 中村淳
Poster presentation, Japanese, 第３５回表面科学学術講演会, 日本表面科学会, つくば, Domestic conference
01 Dec. 2015 - グラフェン表面における水分子層の構造化
赤石暁; 中村淳
Oral presentation, Japanese, 第３５回表面科学学術講演会, 日本表面科学会, つくば, Domestic conference
01 Dec. 2015 - グラフェンのエッジ状態がもたらす不純物の安定化機構
内田優希; 赤石暁; 中村淳
Oral presentation, Japanese, 第３５回表面科学学術講演会, 日本表面科学会, つくば, Domestic conference
01 Dec. 2015 - First-principles Evaluation of The Oxygen Reduction Reaction on Nitrogen-doped Graphene
J.Nakamura; A.Ichikawa; H.Matsuyama; A.Akaishi
Invited oral presentation, English, 2015 EMN Bangkok Meeting, Invited, University of Electronic Science and Technology of China, Bangkok, Thailand, International conference
10 Nov. 2015 - Layered Water on Graphene Surfaces
A.Akaishi; J.Nakamura
Invited oral presentation, English, 2015 EMN Bangkok Meeting, Invited, University of Electronic Science and Technology of China, Bangkok, Thailand, International conference
10 Nov. 2015 - Oxygen reduction reaction on the basal plane of nitrogen-doped graphene: Effects of local arrangement of dopants
H.Matsuyama; A.Ichikawa; A.Akaishi; J.Nakamura
Oral presentation, English, The Irago Conference 2015, TUT and UEC, Tahara, Japan, International conference
23 Oct. 2015 - Conformational stabilization of graphene nanoflakes
M.Ushirozako; A.Akaishi; J.Nakamura
Poster presentation, English, The Irago Conference 2015, TUT and UEC, Tahara, Japan, International conference
23 Oct. 2015 - First-principles study on locally-disordered structures of the Mn-induced GaAs(001)-(2 x 2) surface
K.Funatsuki; A.Akaishi; J.Nakamura
Poster presentation, English, The Irago Conference 2015, TUT and UEC, Tahara, Japan, International conference
23 Oct. 2015 - Strain effect on the hole effective mass of GaSb: A first-priciples study
H.Kishimoto; T.Hatayama; A.Akaishi; J.Nakamura
Poster presentation, English, The Irago Conference 2015, TUT and UEC, Tahara, Japan, International conference
23 Oct. 2015 - Edge-state-induced Stabilization of Dopants in Graphene
Y.Uchida; A.Akaishi; J.Nakamura
Oral presentation, English, American Vacuum Society 62nd International Symposium & Exhibition (AVS-62), American Vacuum Society, San Jose, USA, International conference
21 Oct. 2015 - Oxygen Reduction Reaction on Nitrogen-doped Graphene
J.Nakamura; A.Ichikawa; H.Matsuyama; A.Akaishi
Oral presentation, English, American Vacuum Society 62nd International Symposium & Exhibition (AVS-62), American Vacuum Society, San Jose, USA, International conference
21 Oct. 2015 - Electronic Structures of the Biaxiallystrained GaSb(111) Films
T.Hatayama; A.Akaishi; J.Nakamura
Oral presentation, English, American Vacuum Society 62nd International Symposium & Exhibition (AVS-62), American Vacuum Society, San Jose, USA, International conference
19 Oct. 2015 - 男女共同参画委員会活動報告
小川賀代; 近藤高志; 沈青; 中村淳
Poster presentation, Japanese, 第１３回男女共同参画学協会連絡会シンポジウム, 男女共同参画学協会連絡会, 千葉, Domestic conference
17 Oct. 2015 - 窒素ドープジグザググラフェンナノリボンの磁性
内田優希; 赤石暁; 中村淳
Oral presentation, Japanese, 第７６回応用物理学会秋季学術講演会, 応用物理学会, 名古屋市国際会議場, Domestic conference
15 Sep. 2015 - 酸素還元反応における窒素ドープグラフェンの触媒性
松山治薫; 市川諒英; 赤石暁; 中村淳
Oral presentation, Japanese, 第７６回応用物理学会秋季学術講演会, 応用物理学会, 名古屋市国際会議場, Domestic conference
15 Sep. 2015 - グラフェン表面の水の層構造
赤石暁; 中村淳
Oral presentation, Japanese, 第７６回応用物理学会秋季学術講演会, 応用物理学会, 名古屋市国際会議場, Domestic conference
15 Sep. 2015 - GaAs(001)表面上でのMn吸着サイト
大竹晃浩; 萩原敦; 船附顕汰; 中村淳
Oral presentation, Japanese, 第７６回応用物理学会秋季学術講演会, 応用物理学会, 名古屋市国際会議場, Domestic conference
13 Sep. 2015 - Oxygen reduction reaction on the basal plane of nitrogen- doped graphene
J.Nakamura; A.Ichikawa; H.Matsuyama; A.Akaishi
Oral presentation, English, 31st European Conference on Surface Science (ECOSS-2015), Barcelona, Spain, International conference
03 Sep. 2015 - Wettability of graphene surface
A.Akaishi; J.Nakamura
Poster presentation, English, 31st European Conference on Surface Science (ECOSS-2015), Barcelona, Spain, International conference
01 Sep. 2015 - Water layers on graphene surface
A.Akaishi; J.Nakamura
Poster presentation, English, Graphene Week 2015, Graphene Flagship, Manchester, England, International conference
24 Jun. 2015 - Oxygen reduction reaction on the basal plane of nitrogen-doped graphene
J.Nakamura; A.Ichikawa; H.Matsuyama; A.Akaishi
Poster presentation, English, Graphene Week 2015, Graphene Flagship, Manchester, England, International conference
24 Jun. 2015 - Double-layer structure of water molecules on the graphene surface
A.Akaishi; J.Nakamura
Oral presentation, English, 3rd International Workshop on Solution Plasma and Molecular Technologies (SPM-3), The Petroleum and Petrochemical College (PPC), Chulalongkorn University, International conference
08 May 2015 - Oxygen reduction reaction on nitrogen-doped graphene
Jun Nakamura
Invited oral presentation, English, 3rd International Workshop on Solution Plasma and Molecular Technologies (SPM-3), Invited, The Petroleum and Petrochemical College(PPC), Chulalongkorn University, Bangkok, Thailand, International conference
07 May 2015 - Catalytic reaction of oxygen on nitrogen-doped graphene
H.Matsuyama; A.Ichikawa; A.Akaishi; J.Nakamura
Oral presentation, English, 3rd International Workshop on Solution Plasma and Molecular Technologies (SPM-3), The Petroleum and Petrochemical College (PPC), Chulalongkorn University, Bangkok, Thailand, International conference
06 May 2015 - Electrocatalytic Activity for Oxygen Reduction on Nitrogen-Doped Graphene
A.Ichikawa; A.Akaishi; J.Nakamura
Oral presentation, English, 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, (ISPlasma 2015), JSAP and APS, Nagoya, Japan, International conference
30 Mar. 2015 - Universal Feature of Seebeck Coefficients in Graphene/h-BN Nano-Composites
Y.Ayako; A.Akaishi; J.Nakamura
Oral presentation, English, 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, (ISPlasma 2015), JSAP and APS, Nagoya, Japan, International conference
30 Mar. 2015 - Structural Stability of B-, N-Doped Graphene Nanoribbons
Y.Uchida; A.Akaishi; J.Nakamura
Oral presentation, English, 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, (ISPlasma 2015), JSAP and APS, Nagoya, Japan, International conference
30 Mar. 2015 - Giant Seebeck Coefficiens for the Graphene/h-BN Superlattices
Nakamura; Y.Yokomizo
Oral presentation, English, 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, (ISPlasma 2015), JSAP and APS, Nagoya, Japan, International conference
28 Mar. 2015 - 窒素ドープグラフェン上の酸素還元反応
市川諒英; 赤石暁; 中村淳
Oral presentation, Japanese, 第６２回応用物理学会春季学術講演会, 応用物理学会, 神奈川県平塚市, Domestic conference
11 Mar. 2015 - Catalytic Reduction of Oxygen on Nitrogen-doped Graphene
A.Ichikawa; A.Akaishi; J.Nakamura
Oral presentation, English, 42nd Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI-42), AVS (American Vacuum Society), Snowbird, Utah, USA, International conference
19 Jan. 2015 - On the Wettability of Graphene
A.Akaishi; T.Yonemaru; J.Nakamura
Oral presentation, English, Pacific Rim Symposium on Surfaces, Coatings & Interfaces (pacsurf2014), American Vacuum Society, Hawaii, USA, International conference
11 Dec. 2014 - Anomalous Enhancement of Seebeck Coefficients for the Graphene/h-BN Superlattices
J.Nakamura; Y.Yokomizo
Oral presentation, English, Pacific Rim Symposium on Surfaces, Coatings & Interfaces (pacsurf2014), American Vacuum Society, Hawaii, USA, International conference
11 Dec. 2014 - Universality of Seebeck Coefficients in Graphene/h-BN Nano-Composites
Y.Ayako; A.Akaishi; J.Nakamura
Oral presentation, English, Pacific Rim Symposium on Surfaces, Coatings & Interfaces (pacsurf2014), American Vacuum Society, Hawaii, USA, International conference
08 Dec. 2014 - Reduction of Oxygen on Nitrogen-Doped Graphene
A.Ichikawa; A.Akaishi; J.Nakamura
Oral presentation, English, Pacific Rim Symposium on Surfaces, Coatings & Interfaces (pacsurf2014), American Vacuum Society, Hawaii, USA, International conference
08 Dec. 2014 - 熱電変換材料としてのナノカーボンのポテンシャル
中村淳
Invited oral presentation, Japanese, 東京理科大学総合研究機構ナノカーボン研究部門ワークショップ 実験と理論の強調によるナノ空間・ナノ物質研究の最前線, Invited, 東京理科大学総合研究機構ナノカーボン研究部門, 東京, Domestic conference
25 Nov. 2014 - グラフェンナノリボンのバリスティック熱伝導特性
中村淳
Invited oral presentation, Japanese, 第１回ナノトライボロジーワークショップ, Invited, ナノトライボロジー研究ステーション, 調布, Domestic conference
30 Sep. 2014 - グラフェンエッジ近傍不純物の構造安定性と電子状態
内田優希; 赤石暁; 中村淳
Oral presentation, Japanese, 第７５回応用物理学会秋季学術講演会, 応用物理学会, Domestic conference
19 Sep. 2014 - 第一原理計算によるMn吸着GaAs(001)-(nx2)の構造安定性評価
萩原敦; 大竹晃浩; 中村淳
Oral presentation, Japanese, 第７５回応用物理学会秋季学術講演会, 応用物理学会, 札幌, Domestic conference
18 Sep. 2014 - 窒素ドープグラフェンの構造安定性と電子状態
梅木暁図; 赤石暁; 中村淳
Oral presentation, Japanese, 第７５回応用物理学会秋季学術講演会, 応用物理学会, 札幌, Domestic conference
18 Sep. 2014 - 窒素ドープグラフェン上の酸素分子吸着
市川諒英; 赤石暁; 中村淳
Oral presentation, Japanese, 第７５回応用物理学会秋季学術講演会, 応用物理学会, 札幌, Domestic conference
18 Sep. 2014 - グラフェン/h-BN複合ナノリボンのゼーベック係数
綾子陽介; 赤石暁; 中村淳
Oral presentation, Japanese, 第７５回応用物理学会秋季学術講演会, 応用物理学会, 札幌, Domestic conference
18 Sep. 2014 - Configurational Disorder of Mn-induced (2x2) Reconstruction on GaAs(001)
A.Hagiwara; A.Ohtake; J.Nakamura
Poster presentation, English, 18th International Conference on Molecular Beam Expitaxy (MBE2014), American Vacuum Society (AVS), Flagstaff, USA, International conference
11 Sep. 2014 - 電気通信大学における「パスポートプログラム」の取り組みⅢ
赤石暁; 阿部浩二; 石田尚行; 岡田佳子; 奥野剛史; 清水崇文; 白川英樹; 鈴木勝; 高田亨; 中村淳; 中村仁; 細見斉子; 山北佳宏
Oral presentation, Japanese, 日本物理学会２０１４年秋季大会, 日本物理学会, 春日井, Domestic conference
08 Sep. 2014 - 電気通信大学における専門教育としてのキャリア教育実践例 『エンジニアリングデザイン』を通した社会人基礎力養成
中村淳
Keynote oral presentation, Japanese, 第４回新任教員研修セミナー, Invited, 公益財団法人 大学セミナーハウス, 八王子, Domestic conference
01 Sep. 2014 - Anomalous enhancement of Seebeck coefficients for the graphene/h-BN superlattices
中村 淳
Invited oral presentation, Japanese, 日本表面科学会摩擦の科学研究部会, Invited, 日本表面科学会摩擦の科学研究部会, 調布, Domestic conference
24 May 2014 - Anomalous enhancement of Seebeck coefficients for the graphene/h-BN superlattices
J. Nakamura; Y. Yokomizo
Invited oral presentation, English, 2nd International Workshop on Solution Pasma and Molecular Technologies (SPM-2), Invited, Seoul, Korea, International conference
16 May 2014 - Recent development of droplet epitaxy in NIMS: InAs QDs on InP(111)A for telecom-application and reconstruction-dependent Ga droplet formation on GaAs (100)
T.Mano; A.Ohtake; T.Kuroda; H.Neul; X.Liu; K.Mitsuishi; A.Hagiwara; J.Nakamura; A.Castellano; S.Sanguinetti; T.Noda; Y. Sakuma; K.Sakoda
Invited oral presentation, English, 2nd Workshop Droplet Epitaxy of Semiconductor Nanostructures, Invited, Florence, Italy, International conference
16 May 2014 - Adsorption profiles of oxygen molecule on nitrogen-doped graphne
A. Ichikawa; A. Akaishi; J.Nakamura
Poster presentation, English, 2nd International Workshop on Solution Pasma and Molecular Technologies (SPM-2), Seoul, Korea, International conference
15 May 2014 - Graphite is hydrophobic, or not?
T. Yonemaru; A. Akaishi; J.Nakamura
Poster presentation, English, 2nd International Workshop on Solution Pasma and Molecular Technologies (SPM-2), Seoul, Korea, International conference
15 May 2014 - Seebeck coefficients of graphene/h-BN nano-composites
Y. Ayako; A. Akaishi; J.Nakamura
Poster presentation, English, 2nd International Workshop on Solution Pasma and Molecular Technologies (SPM-2), Seoul, Korea, International conference
15 May 2014 - Structural stability of B-, N-doped zigzag graphene nanoribbons
Y. Uchida; A. Akaishi; J.Nakamura
Poster presentation, English, 2nd International Workshop on Solution Pasma and Molecular Technologies (SPM-2),, Seoul, Korea, International conference
15 May 2014 - グラフェンは疎水性か？
米丸朋宏; 中村淳
Oral presentation, Japanese, 第６１回応用物理学会春季学術講演会, 応用物理学会, 相模原, Domestic conference
19 Mar. 2014 - Giant Seebeck Coefficients of the Graphene/h-BN Superlattices
Y.Yokomizo; J.Nakamura
Public symposium, English, 41st Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI-41), AVS, Santa Fe, NM, USA
Jan. 2014 - Structural stability and electronic structure of boron- or nitrogen-doped graphene
T.Umeki; J.Nakamura
Public symposium, English, American Vacuum Society 60th International Symposium & Exhibition (AVS-60), American Vacuum Society, Long Beach, USA
Oct. 2013 - Mn吸着ＧaAs(001)表面の電子状態と構造安定性評価
萩原敦; 大竹晃浩; 奥北和哉; 中村淳
Oral presentation, Japanese, 応用物理学会,第７４回応用物理学会秋季学術講演会
Sep. 2013 - 物理チャレンジ2013報告：III. 第２チャレンジ理論問題
荒船次郎; 赤井久純; 伊藤敏雄; 川村清; 佐貫平二; 杉山忠男; 鈴木亨; 鈴木直; 高須昌子; 竹中達二; 田中皓; 田中忠芳; 東辻浩夫; 中村淳; 羽田野彰; 松澤通生; 三間圀興; 北原和夫; 近藤泰洋
Oral presentation, Japanese, 日本物理学会,日本物理学会２０１３年秋季大会
Sep. 2013 - 電気通信大学における「パスポートプログラム」の取り組みII
赤石暁; 阿部浩二; 石田尚行; 岡田佳子; 奥野剛史; 白川英樹; 鈴木勝; 高田亨; 中村淳; 中村仁; 細見斉子; 山北佳宏
Oral presentation, Japanese, 日本物理学会,日本物理学会２０１３年秋季大会
Sep. 2013 - Giant Seebeck coefficients of graphene/BN superlattices
Y.Yokomizo; J.Nakamura
Public symposium, English, The 7th International Conference on the Fundamental Science of Graphene and Applications of Graphene-Based Devices (Graphene Week 2013), TU Chemnitz, Chemnitz, Germany
Jun. 2013 - Ferromagnetic coupling between Mn atoms on the GaAs(110) surface
M.Hirayama; J.Nakamura; S.Tsukamoto
Public symposium, English, The 40th International Symposium on Compound Semiconductors (ISCS-2013), CS Week, Kobe
May 2013 - Effects of surface geometry on the wettability of water on graphene
H.Yonemaru; H.Shimizu; J.Nakamura
Public symposium, English, 1st International Workshop on Solution Plasma and Molecular Technologies (SPM-1), Tokyo, Japan
Mar. 2013 - First-pinciples study on the structural stability of boron- and nitrogen-doped graphene
T.Umeki; J.Nakamura
Public symposium, English, 1st International Workshop on Solution Plasma and Molecular Technologies (SPM-1), Tokyo, Japan
Mar. 2013 - Giant Seebeck effect of graphene/BN superlattices
Y.Yokomizo; J.Nakamura
Public symposium, English, 1st International Workshop on Solution Plasma and Molecular Technologies (SPM-1), Tokyo, Japan
Mar. 2013 - First-principles approach to the ballistic phonon thermal transport in graphene nano-ribbons
J.Nakamura; H.Tomita
Invited oral presentation, English, 1st International Workshop on Solution Plasma and Molecular Technologies (SPM-1), Tokyo, Japan, International conference
Mar. 2013 - 電気通信大学における「パスポートプログラム」の取り組み
赤石暁; 阿部浩二; 石田尚行; 岡田佳子; 奥野剛史; 白川英樹; 鈴木勝; 高田亨; 中村淳; 中村仁; 細見斉子; 山北佳宏
Oral presentation, Japanese, 日本物理学会,日本物理学会第６８回年次大会
Mar. 2013 - STM測定と第一原理計算によるGaAs-c(4×4)α,βの電子構造解析
加来滋; 中村淳; 柳生数馬; 吉野淳二
Oral presentation, Japanese, 応用物理学会,第６０回応用物理学会春季学術講演会
Mar. 2013 - Ballistic phonon thermal conductance in graphene nano-ribbon
H.Tomita; J.Nakamura
Public symposium, English, 40th Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI-40), American Vacuum Society, Waikoloa, Hawaii, USA
Jan. 2013 - Incorporation of Cr or Mn at the GaAs(001)-c(4x4)a surface
K.Okukita; A.Hagiwara; A.Ohtake; J.Nakamura
Public symposium, English, 40th Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI-40), American Vacuum Society, Waikoloa, Hawaii, USA
Jan. 2013 - Effects of surface geometry on the wettability of water on graphene
H.Yonemaru; H.Shimizu; J.Nakamura
Public symposium, English, 40th Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI-40), American Vacuum Society, Waikoloa, Hawaii, USA
Jan. 2013 - グラフェンナノリボンの熱伝導特性：第一原理計算からのアプローチ
中村淳
Invited oral presentation, Japanese, 24th International Seminar in Nichia Course, Anan National College of Technology, 阿南工業高等専門学校 地域連携・テクノセンター 寄附講座
Jan. 2013 - Atomic Arrangements and structural stability of the Mn adsorbed GaAs(001) surfaces
A.Hagiwara; A.Ohtake; Y.Kanno; S.Yasumura; J.Nakamura
Public symposium, English, American Vacuum Society 59th International Symposium & Exhibition (AVS-59), American Vacuum Society, Tampa, USA
Oct. 2012 - Structural stability and electronic states of Cr or Mn on GaAs(001)-c(4x4)
K.Okukita; J.Nakamura
Public symposium, English, The 17th International Conference on Molecular Beam Epitaxy (MBE2012), MBE2012, Nara, Japan
Sep. 2012 - Mn吸着GaAs(001)表面の原子配列
大竹晃浩; 萩原敦; 中村淳
Oral presentation, Japanese, 応用物理学会,第７３会応用物理学会学術講演会
Sep. 2012 - Ballistic phonon thermal conductancein Graphene Nano-Ribbon: First-principles calculations
Jun Nakamura; Hiroki Tomita
Public symposium, English, 31st International conference on the physics of Semiconductors (ICPS 2012), ETH urich, Zurich
Jul. 2012 - 第一原理計算を用いた原子レベル物質設計：計算機シミュレーションで探るナノスケールの世界
中村淳
Invited oral presentation, Japanese, 19th International Seminar in Nichia Course, Anan National College of Technology, 阿南工業高等専門学校 地域連携・テクノセンター 寄附講座
Jun. 2012 - 26pPSB-36 Atomic arrangement and electronic states of the GaAs(001)-(2x2)Mn surface
Kanno Yusuke; Ohtake Akihiro; Nakamura Jun
Japanese, Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS)
05 Mar. 2012
05 Mar. 2012- 05 Mar. 2012 - Mn吸着(2x2)-GaAs(001)表面構造および電子状態
菅野雄介; 大竹晃浩; 中村淳
Oral presentation, Japanese, 日本物理学会,日本物理学会第６７回年次大会
Mar. 2012 - GeO2酸素欠損近傍の原子レベル誘電特性：結晶構造依存性
中村淳
Oral presentation, Japanese, 配列ナノ空間を利用した新物質科学-ユビキタス元素戦略-第９回特定領域研究会,配列ナノ空間を利用した新物質科学-ユビキタス元素戦略-第９回特定領域研究会
Jan. 2012 - Local profile of the dielectric constant near the oxygen vacancy in the GeO2 films
Jun Nakamura; Masahiro Tamura
Public symposium, English, AVS 58th International Symposium & Exhibition, American Vacuum Society, Nashville, USA
Nov. 2011 - First-principles approach to ballistic phonon thermal conductivity in Graphene Nano-Ribbon
H.Tomita; J.Nakamura
Public symposium, English, 2011 MRS Fall Meeting, Materials Research Society, USA
Nov. 2011 - Optical characteristics of novel two-dimensional carbon materials; A possibility of ultra-transparent materials
Y.Yokomizo; J.Nakamura
Public symposium, English, 2011 MRS Fall Meeting, Materials Research Society, USA
Nov. 2011 - First-principles evaluation of the local dielectric properties of GeO2 ultrathin films
Jun Nakamura
Invited oral presentation, English, 15th International Conference on Thin Films (ICTF-15), IUVSTA, Kyoto, Japan, International conference
Nov. 2011 - Ballistic phonon thermal conductivity of graphene nano-ribbons
H.Tomita; J.Nakamura
Public symposium, English, International Conference of New Science Created by Materials with Nano Spaces: from Fundamentals to Applications, MEXT, Tsukuba
Nov. 2011 - IV-IV 族半導体超格子のナノスケール誘電特性
赤崎充洋; 中村淳
Oral presentation, Japanese, 日本表面科学会,第３１回表面科学学術講演会
Nov. 2011 - グラフェンナノリボンのバリスティック熱伝導特性
冨田洋樹; 中村淳
Oral presentation, Japanese, 日本表面科学会,第３１回表面科学学術講演会
Nov. 2011 - アームチェアグラフェンナノリボンのバリスティック熱伝導特性
冨田洋樹; 中村淳
Oral presentation, Japanese, 応用物理学会,第７２回応用物理学会学術講演会
Sep. 2011 - Er2SiO5結晶・誘電率の第一原理計算
萩原敦; 中村淳
Oral presentation, Japanese, 応用物理学会,第７２回応用物理学会学術講演会
Sep. 2011 - Electronic and magnetic properties of chemically‐derived graphene nano-ribbon
Y.Fujii; H.Tomita; J.Nakamura
Public symposium, English, 22nd European Conference on Diamond (Diamond 2011), 22nd European Conference on Diamond (Diamond 2011)
Sep. 2011 - GaAs(001)-(2x2)Mn表面の原子配列と電子状態評価
菅野雄介; 大竹晃浩; 平山基; 中村淳
Oral presentation, Japanese, 日本物理学会,日本物理学会２０１１年秋季大会
Sep. 2011 - アームチェアグラフェンナノリボンのバリスティック熱伝導特性評価
冨田洋樹; 中村淳
Oral presentation, Japanese, 配列ナノ空間を利用した新物質科学-ユビキタス元素戦略-第４回若手研究会,配列ナノ空間を利用した新物質科学-ユビキタス元素戦略-第４回若手研究会
Jul. 2011 - GeO2酸素欠損近傍の原子レベル誘電特性：結晶構造依存性
田村雅大; 中村淳
Oral presentation, Japanese, 配列ナノ空間を利用した新物質科学-ユビキタス元素戦略-第４回若手研究会,配列ナノ空間を利用した新物質科学-ユビキタス元素戦略-第４回若手研究会
Jul. 2011 - Mn-induced surface reconstructions on GaAs(001)
A.Ohtake; M.Hirayama; Y.Kanno; J.Nakamura
Public symposium, English, 38th International Symposium on Compound Semiconductors (ISCS-2011), 38th International Symposium on Compound Semiconductors (ISCS-2011), Berlin, Germany
May 2011 - 酸素欠損GeO2薄膜の原子レベル誘電特性
田村雅大; 赤崎充洋; 中村淳
Oral presentation, Japanese, 応用物理学会,第５８回応用物理学関係連合講演会
Mar. 2011 - カルボキシル基終端ジグザググラフェンナノリボンの磁性
藤井雄人; 冨田洋樹; 中村淳
Oral presentation, Japanese, 応用物理学会,第５８回応用物理学関係連合講演会
Mar. 2011 - 学会における人材育成
中村淳
Keynote oral presentation, Japanese, シンポジウム：キャリアデザインと学会活動―出会える人・テーマ・チャンス―, 応用物理学会, Domestic conference
Mar. 2011 - SiCポリタイプにおける誘電率の空間的変調
大杉拓也; 中村淳
Public symposium, Japanese, 配列ナノ空間を利用した新物質科学 ユビキタス元素戦略 第７回領域会議, 大阪大学, 大阪
Jan. 2011 - Nano-materials design by first-principles calculations
Jun Nakamura
Invited oral presentation, English, 5th Japanese-French Frontiers of Science Symposium (JFFoS-5), Japan Society for the Promotion of Science and Centre National de la Recherche Scientifique, Tokyo, Japan, International conference
Jan. 2011 - GeO2超薄膜およびGeO2/Ge界面の誘電特性：局所誘電特性に及ぼす欠陥の影響
田村雅大; 涌井貞一; 中村淳
Oral presentation, Japanese, 日本表面科学会,第３０回表面科学学術講演会
Nov. 2010 - SiON/SiC界面の誘電率不連続性
大杉拓也; 中村淳
Oral presentation, Japanese, 日本表面科学会,第３０回表面科学学術講演会
Nov. 2010 - カルボキシル基終端グラフェンナノリボンの磁性
藤井雄人; 中村淳
Oral presentation, Japanese, 日本表面科学会,第３０回表面科学学術講演会
Nov. 2010 - BN結晶多形ヘテロ構造の電子状態
加藤豪; 中村淳
Oral presentation, Japanese, 日本表面科学会,第３０回表面科学学術講演会
Nov. 2010 - 酸素吸着多角柱型カーボンナノシリンダーの構造安定性と電子状態評価
藤井雄人; 中村淳
Oral presentation, Japanese, 日本表面科学会,第３０回表面科学学術講演会
Nov. 2010 - Electronic and Magnetic Properties of Functionalized Graphene
Y.Fujii; J.Nakamura
Public symposium, English, American Vacuum Society 57th International Symposium & Exhibition (AVS-57), American Vacuum Society, Albuquerque
Oct. 2010 - Band and Dielectric Discontinuities of the Si1-xGe/Si1-yCy Superlattices
T.Ohsugi; J.Nakamura
Public symposium, English, American Vacuum Society 57th International Symposium & Exhibition (AVS-57), American Vacuum Society, Albuquerque
Oct. 2010 - 学会における若手支援の取り組み
中村淳
Keynote oral presentation, Japanese, 「医学物理士が切り拓く最新放射線がん治療」（第７１回応用物理学会学術講演会シンポジウム）, 応用物理学会, Domestic conference
Sep. 2010 - 「博士のキャリア相談会」で考えさせられたこと：若手は学会に何を望む？
中村淳
Keynote oral presentation, Japanese, 博士のキャリアデザイン（第７１回応用物理学会学術講演会パネル討論会）, 応用物理学会, Domestic conference
Sep. 2010 - SiC薄膜上におけるSiON超薄膜の誘電率
大杉拓也; 中村淳
Oral presentation, Japanese, 応用物理学会,第７１回応用物理学会学術講演会
Sep. 2010 - GeO2超薄膜およびGeO2/Ge界面のナノスケール誘電特性
田村雅大; 中村淳
Oral presentation, Japanese, 応用物理学会,第７１回応用物理学会学術講演会
Sep. 2010 - カルボキシル基終端ジグザググラフェンナノリボンの電子状態と磁性
藤井雄人; 中村淳
Oral presentation, Japanese, 応用物理学会,第７１回応用物理学会学術講演会
Sep. 2010 - Sb安定化GaAs(001)-(2x5)表面の原子配列
大竹晃浩; 平山基; 中村淳
Oral presentation, Japanese, 日本物理学会,日本物理学会2010年秋季大会
Sep. 2010 - Percolation properties of nanotube/polymer composites
N.Ainoya; J.Nakamura; A.Natori
Public symposium, English, 18th International Vacuum Congress (IVC-18), International Union for Vacuum Science, Technique and Applications, Beijing, China
Aug. 2010 - Structural and electronic properties of “oxidized” carbon-nanocylinder
Y.Fujii; J.Nakamura; A.Natori
Public symposium, English, The 37th International Symposium on Compound Semiconductors (ISCS-37), International Symposium on Compound Semiconductors, Takamatsu
Jun. 2010 - Evaluation of the local dielectric constant near the oxygen vacancy for the defective HfO2 and SiO2 films
S.Wakui; J.Nakamura; A.Natori
Public symposium, English, The 37th International Symposium on Compound Semiconductors (ISCS-37), International Symposium on Compound Semiconductors, Takamatsu
Jun. 2010 - Magnetic coupling between Mn atoms on GaAs(110)
M.Hirayama; J.Nakamura; A.Natori
Public symposium, English, The 37th International Symposium on Compound Semiconductors (ISCS-37), International Symposium on Compound Semiconductors, Takamatsu
Jun. 2010 - Local profile of dielectric constants near the oxygen vacancy in GeO2
M.Tamura; J.Nakamura; A.Natori
Public symposium, English, International Symposium on Technology Evolution for Silicon Nano-Electronics (ISTESNE), International Symposium on Technology Evolution for Silicon Nano-Electronics (ISTESNE), Tokyo, Japan
Jun. 2010 - BN結晶多形を利用したホモマテリアル・ヘテロ構造の電子状態
加藤豪; 中村淳
Public symposium, Japanese, 「配列ナノ空間を利用した新物質科学 ユビキタス元素戦略」第６回領域会議, 東北大学谷垣研究室, 名古屋
May 2010 - ホモマテリアルヘテロ界面の周期配列制御によるメタマテリアルの創製
中村淳
Public symposium, Japanese, 「配列ナノ空間を利用した新物質科学 ユビキタス元素戦略」第６回領域会議, 東北大学谷垣研究室, 名古屋
May 2010 - Si(001)/La2O3(01-10)界面の第一原理的バンドオフセット評価
谷内良亮; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第５７回応用物理学関係連合講演会
Mar. 2010 - 第一原理計算によるEr2SiO5の結晶構造と電子状態評価
植田啓史; 中村淳; 名取晃子; 一色秀夫
Oral presentation, Japanese, 応用物理学会,第５７回応用物理学関係連合講演会
Mar. 2010 - 有限電界下の第一原理計算を用いたSiGe混晶の誘電率評価
佐藤耕平; 大杉拓也; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第５７回応用物理学関係連合講演会
Mar. 2010 - カーボンナノチューブ分散媒質の交流電気伝導特性
挾間裕一; 相野谷直樹; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第５７回応用物理学関係連合講演会
Mar. 2010 - Si/SiO2量子井戸内D-イオン束縛エネルギーの井戸幅依存性：valley-orbit相互作用効果
千葉朋; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会第６５回年次大会
Mar. 2010 - HfO2・SiO2薄膜における酸素欠損近傍の局所誘電率評価
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会第６５回年次大会
Mar. 2010 - GaAs(110)表面上のMnAs単分子層膜の磁性
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会第６５回年次大会
Mar. 2010 - 有限電界下の第一原理計算による局所誘電率評価の試み
中村淳
Invited oral presentation, Japanese, 物質・材料研究機構第８７回QDRセミナー, 物質・材料研究機構
Dec. 2009 - Ge酸化物超薄膜の誘電特性
田村雅大; 涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本表面科学会,第２９回表面科学学術講演会
Oct. 2009 - 列状酸素吸着カーボンナノシリンダーの構造安定性
藤井雄人; 平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 日本表面科学会,第２９回表面科学学術講演会
Oct. 2009 - CNT分散媒質の異方的交流電気伝導特性
挾間裕一; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第７０回応用物理学会学術講演会
Sep. 2009 - 列状酸素吸着CNTの構造安定性と電子物性評価
藤井雄人; 平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第７０回応用物理学会学術講演会
Sep. 2009 - 第一原理計算によるSi(001)/La2O3(01-10)界面のバンドオフセット評価
谷内良亮; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第７０回応用物理学会学術講演会
Sep. 2009 - HfO2薄膜の誘電特性：結晶構造依存性
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第７０回応用物理学会学術講演会
Sep. 2009 - GaAs(110)表面上Ga置換Mn原子鎖の原子鎖間磁気相互作用
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第７０回応用物理学会学術講演会
Sep. 2009 - バルクSi及びSi量子井戸内D-イオンのvalley-orbit分裂
千葉朋; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第７０回応用物理学会学術講演会
Sep. 2009 - Nano-scale profile of the dielectric constant near surfaces and interfaces: A first-principles approach
Jun Nakamura
Invited oral presentation, English, 2nd International Workshop on Epitaxial growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2009), Anan National College of Technology, Anan, Japan, International conference
Aug. 2009 - Inter-wire coupling of the Ga-substituted Mn atomic wire on GaAs(110)
Motoi Hirayama; Jun Nakamura; Akiko Natori
Invited oral presentation, English, 2nd International Workshop on Epitaxial growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2009), Anan National College of Technology, Anan, Japan, International conference
Aug. 2009 - 「学会における若手人材育成―ト応物があなたのキャリアデザインを応援します―」報告
庄司一郎; 石榑崇明; 中村淳; 小舘香椎子; 岩本光正; 河野明廣
Others, Japanese, 人材育成・男女共同参画委員会、刊行委員会、JJAP/APEX編集委員会,応用物理
Apr. 2009 - GaAs(110)表面上のGa置換Mn原子ワイヤの原子配置とスピン・電子状態
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第５６回応用物理学関係連合講演会
Mar. 2009 - 歪みHfO2薄膜の誘電特性
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第５６回応用物理学関係連合講演会
Mar. 2009 - In-plane strain effects on dielectric properties of the HfO2 thin film
S.Wakui; J.Nakamura; A.Natori
Oral presentation, English, 36th Conference on the Physics and Chemistry of Surfaces and Interfaces
Jan. 2009 - Anisotropic half-metallic ground states of Mn atomic wires on GaAs(110)
M.Hirayama; J.Nakamura; A.Natori
Oral presentation, English, 36th Conference on the Physics and Chemistry of Surfaces and Interfaces
Jan. 2009 - 応用物理学会における人材育成と男女共同参画の取り組み
中村淳
Invited oral presentation, Japanese, 東京工業大学理工系女性研究者プロモーションプログラム講演会, 東京工業大学
Jan. 2009 - GaAs(110)表面上のGa置換Mn原子鎖のスピン状態と電子状態
平山基; 中村淳; 名取晃子
Public symposium, Japanese, The 13th Symposium on the Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS13), 東北大学, 仙台
Jan. 2009 - HfO2/La2O3超薄膜の誘電特性
涌井貞一; 谷内良亮; 中村淳; 名取晃子
Public symposium, Japanese, シリコンナノエレクトロニクスの新展開-ポストスケーリングテクノロジー第３回成果報告会, 名古屋大学, 東京
Jan. 2009 - 博士のキャリア相談会―トライアル開催の報告―
中村淳; 小舘香椎子
Others, Japanese, 応用物理学会人材育成・男女共同参画委員会,応用物理
Nov. 2008 - 最先端表面研究が切り拓くナノエレクトロニクスのブレークスルー原子レベルから環境にやさしく
中村淳
Keynote oral presentation, Japanese, 第２８回表面科学学術講演会, 日本表面科学会, Domestic conference
Nov. 2008 - GaAs(110)表面上のGa置換Mn原子鎖のスピン状態と電子状態
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 日本表面科学会,第２８回表面科学学術講演会
Nov. 2008 - HfO2超薄膜の誘電特性
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本表面科学会,第２８回表面科学学術講演会
Nov. 2008 - カーボンナノチューブ分散媒質の異方的電気伝導特性
挾間裕一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本表面科学会,第２８回表面科学学術講演会
Nov. 2008 - 酸素吸着グラフェンの積層構造の構造安定性と凝集性質
江口俊輔; 中村淳; 名取晃子
Oral presentation, Japanese, 日本表面科学会,第２８回表面科学学術講演会
Nov. 2008 - Si(111)-(7×7)表面上の銀クラスター形成過程の計算機シミュレーション
千葉朋; 冷清水裕子; 泉水一紘; 須藤彰三; 中村淳; 名取晃子
Oral presentation, Japanese, 日本表面科学会,第２８回表面科学学術講演会
Nov. 2008 - La2O3(0001)超薄膜の誘電特性
谷内良亮; 涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本表面科学会,第２８回表面科学学術講演会
Nov. 2008 - Activities of the Japan Society of Applied Physics (JSAP)
Activities of the Japan; Society of; Applied; Physics (JSAP; The; rd IUPAP International Conference on Women in Physics; Oc; Seoul, Korea; K.Ishikawa; M.N-.Gamo; K.Ishikawa; M.O.Watanabe; Y.Toyama; H.Iijima; K.Ito; J.Nakamura; K.Kodate
Public symposium, English, The 3rd IUPAP International Conference on Women in Physics 2008, The Korean Physical Society, Seoul, Korea
Oct. 2008 - La2O3(0001)超薄膜の誘電特性
谷内良亮; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第６９回応用物理学会学術講演会
Sep. 2008 - HfO2超薄膜の局所誘電率プロファイル
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第６９回応用物理学会学術講演会
Sep. 2008 - GaAs(110)表面上のGa置換Mn原子ワイヤの原子配置とスピン・電子状態
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第６９回応用物理学会学術講演会
Sep. 2008 - SiC結晶多形の誘電率：第一原理計算による積層構造依存性評価
佐藤耕平; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第６９回応用物理学会学術講演会
Sep. 2008 - 学会における若手人材育成―応物があなたのキャリアデザインを応援します―
庄司一郎; 石榑崇明; 中村淳; 小舘香椎子
Oral presentation, Japanese, 応用物理学会,第６９回応用物理学会学術講演会
Sep. 2008 - Si(111)-(7x7)表面上の銀クラスター形成過程の計算機シミュレーション
千葉朋; 冷清水裕子; 泉水一紘; 須藤彰三; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第６９回応用物理学会学術講演会
Sep. 2008 - GaAs(110)表面上のGa置換Mnナノワイヤの原子配置とスピン・電子状態
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００８年秋季大会
Sep. 2008 - 異方的な超微粒子分散媒質の高周波電気伝導特性
挾間裕一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００８年秋季大会
Sep. 2008 - グラフェンリボンのバリスティック熱コンダクタンス
山口翔; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００８年秋季大会
Sep. 2008 - 酸化グラフェン積層物質の構造安定性
江口俊輔; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００８年秋季大会
Sep. 2008 - GaAs(001)-(2x4)-Sb吸着構造の再検討
大竹晃浩; 平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００８年秋季大会
Sep. 2008 - Anomalous enhancement of the local dielectric constant near defects in SiO2
S.Wakui; J.Nakamura; A.Natori
Public symposium, English, 14th International Conference on Solid Films and Surfaces (ICSFS-14), 14th International Conference on Solid Films and Surfaces (ICSFS-14), Dublin, Ireland
Jul. 2008 - Polytype dependence of permittivity of SiC films
J.Nakamura; K-H.Sato; Y.Iwasaki; S.Wakui; A.Natori
Public symposium, English, 14th International Conference on Solid Films and Surfaces (ICSFS-14), 14th International Conference on Solid Films and Surfaces (ICSFS-14), Dublin, Ireland
Jul. 2008 - GaAs(110)表面上のGa置換Mn原子鎖のスピン状態
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 第４回量子ナノ材料セミナー,第４回量子ナノ材料セミナー, 電気通信大学, 調布
Jul. 2008 - GaAs(110)表面上のGa置換Mn原子鎖のスピン状態
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 第４回量子ナノ材料セミナー,第４回量子ナノ材料セミナー
Jul. 2008 - Atomic-scale friction of nanometer-sized contacts
M.Igarashi; J.Nakamura; A.Natori
Public symposium, English, 14th International Conference on Solid Films and Surfaces (ICSFS-14), 14th International Conference on Solid Films and Surfaces (ICSFS-14), Dublin, Ireland
Jun. 2008 - First-principles calculations on STM images for subsurface dopants: tip-induced band-bending and dependence on dopant species
M.Hirayama; J.Nakamura; A.Natori
Public symposium, English, 14th International Conference on Solid Films and Surfaces (ICSFS-14), 14th International Conference on Solid Films and Surfaces (ICSFS-14), Dublin, Ireland
Jun. 2008 - 人材育成・男女共同参画第８回ミーティング報告「博士『後』のキャリアを考える２」
津村徳道; 中村淳; 庄司一郎; 坂野井和代
Others, Japanese, 応用物理学会 人材育成・男女共同参画委員会,応用物理 77, 581 (2008)
May 2008 - Si/酸化物界面近傍における誘電率の空間分布：第一原理計算による評価
中村淳
Invited oral presentation, Japanese, 東京大学物性研究所客員所員講演会, 東京大学物性研究所
Apr. 2008 - 欠陥のあるSiO2/Si(001)界面・SiO2超薄膜の局所誘電率評価
涌井貞一; 中村淳; 名取晃子
Public symposium, Japanese, シリコンナノエレクトロニクスの新展開-特定領域研究ポストスケール第２回成果報告会, 名古屋大学, 東京
Mar. 2008 - 多谷半導体中のD-基底状態：磁場効果
井上純一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会第６３回年次大会
Mar. 2008 - SiO2/Si(001)界面におけるナノスケール誘電特性の第一原理計算
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会第６３回年次大会
Mar. 2008 - ナノスケールの摩擦機構：ティップサイズ効果
五十嵐正典; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会第６３回年次大会
Mar. 2008 - 不純物ドープSi(111)表面のSTM像の第一原理計算II：STM像の不純物原子種依存性
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会第６３回年次大会
Mar. 2008 - Si(111)水素終端表面近傍不純物のSTMシミュレーション：不純物種依存性と探針誘起バンドベンディング
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第５５回応用物理学関係連合講演会
Mar. 2008 - SiO2薄膜中の欠陥近傍における局所誘電率の異常増大
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第５５回応用物理学関係連合講演会
Mar. 2008 - （グラフェンの応用物性）グラフェンの酸化とコンポジット材料
中村淳; 伊藤潤; 尾越勇太; 名取晃子
Invited oral presentation, Japanese, 第５５回応用物理学関係連合講演会, 応用物理学会
Mar. 2008 - Dielectric properties of the interface between Si and SiO_2
Sadakazu Wakui; Jun Nakamura; Akiko Natori
Oral presentation, English, American Vacuum Society
Jan. 2008 - Band-bending effects on STM images for subsurface dopants
Motoi Hirayama; Jun Nakamura; Akiko Natori
Public symposium, English, 15th International Colloquium on Scanning Probe Microscopy, Japan Society of Applied Physics, Atagawa (Shizuoka)
Dec. 2007 - Si量子ドットの多電子基底状態
桝日向; 中村淳; 名取晃子
Oral presentation, Japanese, 表面科学会,第２７回表面科学講演大会
Nov. 2007 - Dielectic properties of the interface between Si adn SiO2
S.Wakui; J.Nakamura; A.Natori
Public symposium, English, 5th International Symposium on Control of Semiconductor Interfaces (ISCSI2007), The 154th Committee on Semiconductor Interfaces and Their Applications, Japan Society for the Promotion of Science (JSPS), Hachiouji, Japan
Nov. 2007 - Nano-scale profile of the dielectric constant near the Si/Oxide interface: A first-principles approach
Jun Nakamura
Invited oral presentation, English, 212th Electrochemical society (ECS-212), The Electrochemical Society, Washington D.C., International conference
Oct. 2007 - グラフェンのバリスティック熱伝導特性
斎藤浩一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会第６２回年次大会
Sep. 2007 - Mechanism of velocity saturation and lateral resonance in atomic-scale sliding friction
M.Igarashi; J.Nakamura; A.Natori
Public symposium, English, International Conference on Nano Science and Technology (ICN+T 2007), International Union of Vacuum Science, Technique and Applications (IUVSTA), Stockholm, Sweden
Jul. 2007 - STM simulations for B- and P-doped Si(111) surfaces
M.Hirayama; J.Nakamura; A.Natori
Public symposium, English, International Conference on Nano Science and Technology (ICN+T 2007), International Union of Vacuum Science, Technique and Applications (IUVSTA), Stockholm, Sweden
Jul. 2007 - Mechanism of velocity saturation of atomic friction force and the dynamic superlubricity
J.Nakamura; J.Ito; A.Natori
Public symposium, English, International Conference on Nano Science and Technology (ICN+T 2007), International Union of Vacuum Science, Technique and Applications (IUVSTA), Stockholm, Sweden
Jul. 2007 - １次元Tomlinsonモデルを用いた原子レベル摩擦機構の解明
中村淳
Invited oral presentation, Japanese, 豊田理化学研究所・特定課題研究「ナノトライボロジー」平成１９年度第一回研究会, 豊田理化学研究所
Jun. 2007 - 有限温度原子レベル摩擦機構～１次元Tomlinsonモデルによる解析～
中村淳
Invited oral presentation, Japanese, 日本物理学会２００７年春季大会シンポジウム：ナノスコピック系の摩擦の物理：摩擦の素過程と制御, 日本物理学会
Mar. 2007 - 第一原理計算によるSiO2/Si(001)界面のナノスケール誘電特性評価
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００７年春季大会
Mar. 2007 - 不純物ドープSi(111)表面のSTM像の第一原理計算
平山基; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第５４回応用物理学関係連合講演会
Mar. 2007 - 酸素吸着グラフェンの構造双安定性の第一原理計算
伊藤潤; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００７年春季大会
Mar. 2007 - SiO2/Si(001)界面のナノスケール誘電特性
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第５４回応用物理学関係連合講演会
Mar. 2007 - SiO2/Si(001)界面のナノスケール誘電特性
涌井貞一; 中村淳; 名取晃子
Public symposium, Japanese, ゲートスタック研究会第１２回研究会, 応用物理学会, 三島
Feb. 2007 - 外部電場はSi(001)面の表面超構造を変化させるか？
中村淳
Invited oral presentation, Japanese, 第１回NIMSナノ計測センターシンポジウム「半導体表面における構造と物性の新展開 - Si(001)とGe(001)表面を中心として -」, 物質・材料研究機構
Feb. 2007 - ac conductivity and dielectric constant of conductor-insulator composites
Y.Koyama; T.B.Murutanto; J.Nakamura; A.Natori
Public symposium, English, 6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics (Polytronic 2006), IEEE
Jan. 2007 - B／PドープSi(111)表面のSTM像の第一原理シミュレーション
平山基; 中村淳; 名取晃子
Public symposium, Japanese, 第6回ドーパント計測研究会, 産業技術総合研究所, つくば
Jan. 2007 - STM simulations for B- and P-doped Si(111) surfaces
H.Hirayama; J.Nakamura; A.Natori
Public symposium, English, The 14th International Colloquium on Scanning Probe Microscopy (ICSPM-14), The Japan Society of Applied Physics
Dec. 2006 - Mechanism of velocity saturation of atomic friction force and the dynamic superlubricity at torsional resonance
M.Igarashi; J.Nakamura; A.Natori
Public symposium, English, The 14th International Colloquium on Scanning Probe Microscopy (ICSPM-14), The Japan Society of Applied Physics
Dec. 2006 - 人材育成・男女共同参画第８回ミーティング報告「博士『後』のキャリアを考える」
坂野井和代; 中村淳; 庄司一郎; 近藤高志
Others, Japanese, 応用物理学会 人材育成・男女共同参画委員会,応用物理
Dec. 2006 - Deielectproperties of the interface between Si and SiO2
Sadakazu Wakui; Jun Nakamura; Akiko Natori
Public symposium, English, 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices - Science and Technology, The Japan Society of Applied Physics, Kawasaki
Nov. 2006 - First-principles calculation of electrostatic property of the interface: Ultra-thin Al/Si(111)
Tomo Shimizu; Kenji Natori; Jun Nakamura; Akiko Natori
Public symposium, English, 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices - Science and Technology, The Japan Society of Applied Physics, Kawasaki
Nov. 2006 - First-principles evaluations of dielectric properties from nano-scale of points of view
Jun Nakamura; Sadakazu Wakui; Akiko Natori
Invited oral presentation, English, 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT-8), IEEE, Shanghai, International conference
Oct. 2006 - 第一原理計算に基づく絶縁超薄膜誘電率の理論的解析
中村淳
Invited oral presentation, Japanese, Nano CMOS 今後１５年の展望とその技術課題, IEEE-EDS Japan Chapter
Sep. 2006 - D-基底状態の拡散量子モンテカルロ計算：有効質量異方性および多谷効果
井上純一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００６年秋期大会
Sep. 2006 - 原子摩擦力の速度飽和機構
五十嵐正典; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００６年秋期大会
Sep. 2006 - Dielectric discontinuity at a twin boundary in Si(111)
Jun Nakamura; Akiko Natori
Public symposium, English, ICPS-28 (28th International Conference on the Physics of Semiconductors), International Conference on the Physics of Semiconductors, Vienna, Austria
Jul. 2006 - Charge correlation and spin coupling in double quantum dots
Hyuga Masu; Jun Nakamura; Akiko Natori
Public symposium, English, ICPS-28 (28th International Conference on the Physics of Semiconductors), International Conference on the Physics of Semiconductors, Vienna, Austria
Jul. 2006 - 第一原理計算による極薄膜Al/Si界面の検討：界面水素終端の影響
清水共; 名取研二; 中村淳; 名取晃子
Oral presentation, Japanese, 応用物理学会,第５３回応用物理学関係連合講演会
Mar. 2006 - 縦型２重量子ドットのスピン結合と磁場制御
桝日向; 山田太一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会第６１回年次大会
Mar. 2006 - Si(111)双晶境界近傍の局所的誘電率変化
中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会第６１回年次大会
Mar. 2006 - First-principles calculations of dielectric constatns for ultrathin SiO2 films
S.Wakui; J.Nakamura; A.Natori
Oral presentation, English, 33rd Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-33)
Jan. 2006 - Dielectric discontinuity at a stacking fault in Si(111)
J.Nakamura; A.Natori
Oral presentation, English, 33rd Conference on the Physics and Chemisty of Semiconductor Interfaces (PCSI-33)
Jan. 2006 - First-Principles evaluations of dielectric constants
J.Nakamura; S.Wakui; A.Natori
Invited oral presentation, English, IEEE-EDS International Workshop on Nano CMOS, IEEE-EDS, Mishima, Japan, International conference
Jan. 2006 - First-principles calculations of dielectric constants for ultrathin SiO2 films
S.Wakui; J.Nakamura; A.Natori
Oral presentation, English, ISSS-4 (4-th International Symposium on Surface Science and Nanotechnology)
Nov. 2005 - First-principles calculations on adsorption and diffusion of oxygen atoms on graphene sheets
J.Ito; J.Nakamura; A.Natori
Oral presentation, English, ISSS-4 (4-th International Symposium on Surface Science and Nanotechnology)
Nov. 2005 - Structural stabilities and electronic properties of planar Si compounds
M.Hirayama; J.Nakamura; A.Natori
Oral presentation, English, ISSS-4 (4-th International Symposium on Surface Science and Nanotechnology)
Nov. 2005 - Controlling the spin coupling in double quantum dots
H.Masu; J.Nakamura; A.Natori
Oral presentation, English, ISSS-4 (4-th International Symposium on Surface Science and Nanotechnology)
Nov. 2005 - Dielectric properties for ultra-thin films of the polytypes of SiC
J.Nakamura; A.Natori
Oral presentation, English, ISSS-4 (4-th International Symposium on Surface Science and Nanotechnology)
Nov. 2005 - Atomic scale mechanism of friction
S.Wakunami; J.Nakamura; A.Natori
Oral presentation, English, ISSS-4 (4-th International Symposium on Surface Science and Nanotechnology)
Nov. 2005 - Electronic and magnetic properties of BNC ribbons
T.Nitta; J.Nakamura; A.Natori
Oral presentation, English, ISSS-4 (4-th International Symposium on Surface Science and Nanotechnology)
Nov. 2005 - Ga- and As-Rich Limit of Surface Reconstruction on GaAs(001)
A.Ohtake; P.Kocan; K.Seino; W.G.Schmidt; J.Nakamura; A.Natori; N.Koguchi
Oral presentation, English, European Conference on Surface Science (ECOSS-23)
Sep. 2005 - Friction mechanism in atomic-scale
S.Wakunami; J.Nakamura; A.Natori
Oral presentation, English, European Conference on Surface Science (ECOSS-23)
Sep. 2005 - First-principles evaluations of dielectric constants for ultra-thin semiconducting films
J.Nakamura; A.Natori
Oral presentation, English, European Conference on Surface Science (ECOSS-23)
Sep. 2005 - SiO2超薄膜の誘電特性
涌井貞一; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００５年秋期大会
Sep. 2005 - 原子レベルの摩擦機構
涌波信弥; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００５年秋期大会
Sep. 2005 - SiC多形超薄膜の誘電特性
中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００５年秋期大会
Sep. 2005 - グラフェンシートの酸素吸着と拡散過程の第一原理計算
伊藤潤; 中村淳; 名取晃子
Oral presentation, Japanese, 日本物理学会,日本物理学会２００５年秋期大会
Sep. 2005 - 若手からの提言「多様化するライフスタイルとキャリアプラン」
中村淳; 青木画奈
Others, Japanese, 応用物理
Dec. 2004 - ポスドク制度の実態報告
中村淳
Keynote oral presentation, Japanese, 第６５回応用物理学会学術講演会, Domestic conference
Sep. 2004 - ポスドク・任期付き技術者／研究者の現状と将来像
中村淳
Keynote oral presentation, Japanese, 第６４回応用物理学会学術講演会, Domestic conference
Sep. 2003 - Tunneling properties of SiO2 ultra thin films
Watarai M.; Nakamura J.; Natori A.
Japanese, Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS)
13 Aug. 2002
13 Aug. 2002- 13 Aug. 2002 - A new structure model proposed for the GaAs(001)-c(4×4) surface
Ohtake A.; Nakamura J.; Tsukamoto S.; Koguchi N.; Natori A.
Japanese, Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS)
13 Aug. 2002
13 Aug. 2002- 13 Aug. 2002 - 25pPSB-43 Dimer buckling dynamics on Si(100) surfaces
Osanai M.; Nakamura J.; Yasunaga H.; Natori A.
Japanese, Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS)
01 Mar. 2002
01 Mar. 2002- 01 Mar. 2002 - 25pPSB-60 Two-dimensional current distribution between two current probesin inhomogeneous surfaces
Natori A.; Itoh T.; Nakamura J.; Yasunaga H.
Japanese, Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS)
01 Mar. 2002
01 Mar. 2002- 01 Mar. 2002 - Interface Structural analysis using medium-energy coaxial impact-collision ion scattering spectroscopy
H.Sone; T.Kobayashi; G.Dorenbos; J.Nakamura; M.Aono; C.F.McConville
Invited oral presentation, English, ICAARI-6, Texas, USA, International conference
2000 - Structure and electronic states for a double strand of Au atoms
J.Nakamura
Invited oral presentation, English, 24th Relativity Workshop: The Society for Discrete Variational Xa, Invited, The Society for Discrete Variational Xa, Kyoto, Japan, International conference
Sep. 1999
Courses
- 上級コンピュータ演習
The University of Electro-Communications - 上級コンピュータ演習
電気通信大学 - 基盤理工学専攻基礎
The University of Electro-Communications - 基盤理工学専攻基礎
電気通信大学 - UECパスポートプログラムB
The University of Electro-Communications - UECパスポートプログラムB
電気通信大学 - UECパスポートプログラムA
The University of Electro-Communications - UECパスポートプログラムA
The University of Electro-Communications - ナノエレクトロニクス特論
The University of Electro-Communications - ナノエレクトロニクス特論
電気通信大学 - 基礎電磁気学および演習
The University of Electro-Communications - 凝縮系物理学特別講義IV
千葉大学大学院理学研究科 - 凝縮系物理学特別講義IV
千葉大学大学院理学研究科 - 総合コミュニケーション科学
The University of Electro-Communications - Ｋ課程輪講
The University of Electro-Communications - 電磁気学および演習
The University of Electro-Communications - 電磁気学および演習
電気通信大学 - 基礎電磁気学および演習
The University of Electro-Communications - 基礎電磁気学および演習
電気通信大学 - 総合コミュニケーション科学
The University of Electro-Communications - 総合コミュニケーション科学
電気通信大学 - ＵＥＣパスポートプログラムII
The University of Electro-Communications - ＵＥＣパスポートプログラムI
The University of Electro-Communications - UECパスポートセミナー
The University of Electro-Communications - 数値計算法
The University of Electro-Communications - 計算数理工学
The University of Electro-Communications - 固体電子論
The University of Electro-Communications - ナノエレクトロ二クス特論
The University of Electro-Communications - 電磁気学第一
The University of Electro-Communications - Ｋ課程輪講
The University of Electro-Communications - Ｋ課程輪講
電気通信大学 - 先進理工学専攻基礎
The University of Electro-Communications - 先進理工学専攻基礎
電気通信大学 - ＵＥＣパスポートプログラムII
The University of Electro-Communications - ＵＥＣパスポートプログラムII
電気通信大学 - ＵＥＣパスポートプログラムI
The University of Electro-Communications - ＵＥＣパスポートプログラムI
電気通信大学 - UECパスポートセミナー
The University of Electro-Communications - UECパスポートセミナー
電気通信大学 - 数値計算法
The University of Electro-Communications - 数値計算法
電気通信大学 - 電子工学実験第一
The University of Electro-Communications - 電子工学実験第一
The University of Electro-Communications - 電子工学実験第一
電気通信大学 - 計算数理工学
The University of Electro-Communications - 計算数理工学
電気通信大学 - 固体電子論
The University of Electro-Communications - 固体電子論
電気通信大学 - ナノエレクトロ二クス特論
The University of Electro-Communications - ナノエレクトロ二クス特論
電気通信大学 - 電磁気学第一
The University of Electro-Communications - 電磁気学第一
電気通信大学
Affiliated academic society
Research Themes
- 一酸化炭素還元能を発現させる非平面π共役系原子配列の設計と評価
中村 淳
日本学術振興会, 科学研究費助成事業, 電気通信大学, 基盤研究(C), 24K08242
01 Apr. 2024 - 31 Mar. 2027 - 二次元錯体配列によるシナジェティック触媒の新展開
藪 浩; 中村 淳; 熊谷 明哉
日本学術振興会, 科学研究費助成事業, 東北大学, 基盤研究(A), 23H00301
01 Apr. 2023 - 31 Mar. 2026 - Development of the novel ferromagnetic materials by the two-dimensional structure control and clarification of the mechanism of the ferromagnetism for Mn-GaAs
NAKAMURA Jun; OHTAKE Akihiro
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), The University of Electro-Communications, Grant-in-Aid for Scientific Research (B), A combined experimental and theoretical study on the incorporation of Mn in GaAs has been presented. We have successfully controlled the location of Mn atoms at GaAs(001) surfaces by changing the surface atomic geometry. While Mn atoms prefer to substitute Ga sites at a subsurface layer under the As-rich conditions, the incorporation into interstitial sites becomes more favorable as the surface As coverage is decreased. The present results provide a mechanism for the enhanced incorporation of substitutional Mn atoms in GaMnAs under low-temperature (i.e., As-rich) growth conditions., 22360020
2010 - 2012 - ホモマテリアルヘテロ界面の周期配列制御によるメタマテリアルの創製
中村 淳
日本学術振興会, 科学研究費助成事業 特定領域研究, 電気通信大学, 特定領域研究, 本研究は、(1)人工的に制御された「ホモマテリアルヘテロ界面」構造を利用したヘテロ界面の基礎物理モデルの構築と、(2)その周期配列制御によるメタマテリアルの創製、を目論むものである。すなわち、本質的に界面の格子不整合を含まない同物質の異結晶形ヘテロ構造を利用して、新たなメタマテリアルの創製とそのヘテロ構造デバイスへの応用の可能性を探る。昨年までにとりあげた窒化ホウ素(BN)に加え、本年はIV-IV族化合物半導体として最も典型的な物質で、ワイドバンドギャップ半導体として応用上も非常に重要な炭化ケイ素(SiC)、およびポストスケール世代の半導体材料として注目されるSiGe混晶を対象として、その「ホモマテリアルヘテロ界面」の電子状態を評価した。密度汎関数理論に基づく第一原理計算を用いて結晶多形超格子の電子状態計算を行った。用いた結晶多形は、立方晶系(閃亜鉛鉱構造)の3C、および六方晶系の2H(ウルツ鉱構造)、4H、および6Hである。本研究では3C/nHタイプの超格子(n=2,4,6)を考えた。SiCやSiGeのようなIV-IV族半導体および昨年評価を行ったBNのようなIII-V族化合物半導体の超格子はいずれもタイプIIの超格子となり、一方IV族単体半導体同士のヘテロ界面を用いるといずれもタイプIの超格子となることがわかった。化合物であるか単体であるかによって超格子のタイプが異なるのは、そのバンドダイヤグラムから理解可能であることが示された。また、各超格子について局所誘電率(屈折率)の空間プロファイルを評価したところ、界面近傍における誘電率の変化領域は原子レベル(高々2から3原子層以内)であることがわかった。ホモマテリアルヘテロ界面を用いることによって、急峻な界面特性を持つ超格子を作製可能であることが理論的に示された。, 22013006
2010 - 2011 - ナノスケールSiO2/Si界面の局所誘電特性に及ぼす欠陥の影響
名取 晃子; 中村 淳
日本学術振興会, 科学研究費助成事業 特定領域研究, 電気通信大学, 特定領域研究, 電界印加下の密度汎関数基底状態計算(B. Meyer et al., Phys. Rev. B 63(2001)205426)を用いて電界誘起電荷密度を求め、ガウス分布フィルターを用いて粗視化を行う。粗視化された電界誘起電荷観密度を用いてガウス則より粗視化された局所内部電界を評価し、電束密度連続の式より局所誘電率の3次元空間分布を求める定式化とプログラム開発を行った。 SiO2超薄膜と理想的なSiO2/Si(001)界面に酸素欠損を導入し、電子分極による光学誘電率、電子分極と格子分極による静的誘電率の3次元空間分布を調べた。欠陥近傍での光学誘電率の空間変化は小さいが、静的誘電率は欠陥近傍で増大することを見出した。 さらに、HfO2、La2O3等のイオン性の強いhigh-k超薄膜の誘電特性、Ge-MOSの酸化膜として期待されるGeO2超薄膜、GeO2/Ge(001)界面の局所誘電特性の計算を行った。GeO2酸化膜では、結晶構造の異なるquartz構造とrutile構造の2種類の薄膜を調べた。quartz構造薄膜は共有結合性が強く、quartz構造SiO2膜と類似の誘電特性を示す。イオン結合性の強いrutile構造薄膜はquartz構造より大きな静的誘電率を持ち、酸素欠損近傍での静的誘電率はさらに増大することを示した。 HfO2超薄膜の誘電特性の計算は論文にまとめ、J. Vac. Sci. Technol. Bに掲載された。GeO2超薄膜、GeO2/Ge(001)界面の局所誘電特性の研究成果は、"37^Conf. on the Physics and Chemistry of Surfaces and Interfaces"で発表され、現在、論文を執筆中である。, 20035005
2008 - 2009Atomic-scale dielectric properties at the interface between Si and La-based oxides
NAKAMURA Jun
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), The University of Electro-Communications, Grant-in-Aid for Scientific Research (C), 密度汎関数理論に基づく第一原理電子状態計算を用いて、La酸化物超薄膜単体およびLa酸化物とSi基板界面における原子レベル誘電特性、電子状態計算を行った。La酸化物表面においては、表面緩和により誘電率が著しく低下することがわかった。また、界面におけるバンドオフセットは、界面原子配列の詳細に大きく依存することがわかった。, 19560020
2007 - 2009Mechanism of friction and superlubricity in nanometer-scale contacts
NATORI Akiko; JUN Nakamura
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), The University of Electro-Communications, Grant-in-Aid for Scientific Research (C), 摩擦力顕微鏡(FFM)が開発されて原子スケールでの摩擦力の観測が可能となり、ナノスケールのコンタクトの摩擦に対して巨視的な接触面での摩擦則が成立しないことが明らかになっている。本研究の目的は、ナノスケールコンタクトの摩擦機構を明らかにし、摩擦が消滅する超潤滑の出現機構と出現条件を解明することである。 FFMでの単針の運動をTomlinsonモデルを用いて調べ、以下のことがらを明らかにした。 (1)FFMで観測される摩擦力のスキャン速度飽和について、新たな機構を提唱した。 (2)単針先端が複数個の原子で構成される場合の摩擦機構を明らかにした。 (3)FFM単針を振動させながらスキャンしたときに観測される摩擦消失(動的超潤滑)の機構を明らかにした。, 18540313
2006 - 2008ナノスケールSiO2/Si界面の電子状態と局所誘電特性に及ぼす欠陥の影響
名取 晃子; 中村 淳
日本学術振興会, 科学研究費助成事業 特定領域研究, 電気通信大学, 特定領域研究, 電界印加下の密度汎関数基底状態計算(B.Meyer et al,Phys.Rev.B 63(2001)205426)を用いて電界誘起面平均電荷密度を求め、ガウス則より局所内部電界を評価し、電束密度連続の式より局所誘電率を計算する定式化とプログラム開発を行った。 SiO_2超薄膜と理想的なSiO_2/Si(001)界面に適用し(S. Wakui et al.,in submission to J.Vac.Sci.Tech.B)、電子分極による光学誘電率、電子分極と格子分極の双方による静的誘電率の評価を行った。光学誘電率、静的誘電率共に、表面、界面近傍で急峻に変化することを見出した。さらに、SiO_2超薄膜と理想的なSiO_2/Si(001)界面に酸素空孔を導入し、欠陥が局所誘電率に与える影響を調べた。酸素空孔近傍で光学誘電率、静的誘電率双方に増大が見られた。光学誘電率増強は、酸素空孔に起因するSiタッグリングボンド準位がSiエネルギーギャップ中に現れることにより、電子分極が増大することによる。SiO_2超薄膜での静的誘電率増強には、酸素空孔によるSi原子層間隔の減少にも起因する。さらに、SiO_2超薄膜内のHf原子のSi原子置換により、静的誘電率が局所的に異常に大きく増大する現象を見出した(S.Wakui et al.,in submission to Appl.Phys.Lett.)。, 19026004
2007 - 2007ナノメータ・スケール集積エレクトロニクスの理論的構築
名取 研二; 中村 淳; 佐野 伸行; 山部 紀久夫
日本学術振興会, 科学研究費助成事業 特定領域研究, 筑波大学, 特定領域研究, 1.昨年度に開発した、MOSFET中のキャリヤ輸送にフェルミ統計を考慮したモンテカルロ・シミュレーションにより、極微細MOSFETにおいて、バリステイックな電流やキャリヤ速度がフォノン散乱によって抑制される状況を解析した。 2.将来の有望な素子候補といわれる、ナノワイヤからなるFETの特性に関して、バリステイックなキャリヤ輸送の場合の電流電圧特性の一般公式を与えた。ナノワイヤの1次元バンド構造を与えれば、容易にFET特性を算出できる。これを用いて、ナノワイヤの性能極限などを議論できる。 3.MOSFETの閾値電圧の揺らぎの検討に関して。昨年度の深さ方向1次元の解析を、面内にそのようなカラムが束ねられているモデルに拡張して、チャネル内のキャリヤ伝導をカラム間のパーコレーションとして扱うシミュレーション・モデルを開発した。従来の大規模シミュレータのような計算コストが掛からない、3次元的な不純物位置情報を反映した、閾値電圧の標準偏差を知る強力なツールとなる可能性がある。 4.Siの(113)面上に、Geのナノワイヤが自己組織化的に成長する機構の解析に関して。昨年、第一原理計:算およびSTM観察の結果より、成長するGeの結晶構造がTPI&Rモデルといわれる構造であることを特定した。続いて、本年度はGe結晶の応力分布を算出し、結晶内の一方向にcompressiveなストレスが、またこれと直交する方向にtensileなストレスがかかっており、このストレス異方性が細長い島成長からワイヤ成長へと方向付けていることを明らかにした。ワイヤの自己組織化の有力な機構のひとつと見られる。 5.ナノスケール素子形成のための、シリコン面の制御法の検討。陽極酸化によりシリコン面に酸化膜フェンスで囲まれた領域を形成し、極低溶存酸素純水に依るエッチングで、領域内を完全にステップフリーとすることができた。また、シリコン面のテラス構造をCuを含む溶液に浸漬し、ステップに沿ったCu吸着によりCuナノワイヤを形成することができた。これらは、ナノスケールの素子構造形成の制御法の一つとして注目される。, 13025210
2001 - 2003Atomistic tunnelig barrier of heteroepitaxial SiO_2/Si(001)
NATORI Akiko; NAKAMURA Jun
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), The University of Electro-Communications, Grant-in-Aid for Scientific Research (C), Energy dispersion relation and probability distribution of the Bloch function at the band edge were calculated for SiO2/Si(100) super-lattice structure, using the density functional first-principles calculation. From the band edge energy and the probability distribution of the Bloch function, novel evaluation method of valence band offsets are proposed. This method can be available even if the layer thickness of the super-lattice is very thin, although the conventional method is appropriate for thick layers. The following results have been obtained. (1) SiO2 layer thickness dependence of valence band offsets and corresponding penetration depth of a hole : The valence band offsets decreases as SiO2 layer thickness decreases, due to decrease of the energy gap of SiO2. The penetration depth of a hole gives a consistent result with the valence band offset (2) Si layer thickness dependence of valence band offsets and energy gap : The valence band offset decreases and the energy gap increases, as Si layer thickness decreases. This is due to quantum confinement effect in Si layer. (3) Carrier injection dependence of valence band offsets : The valence band offsets increases as electron concentration increases, although the valence band offset decreases as hole concentration increases. This is attributed to change of the electrostatic potential by carrier injection., 13640322
2001 - 2002Social Contribution Activities
Media Coverage
- Transforming Surface Science: Unveiling Local Dielectric Properties through Advanced Visualization Techniques
Bioengineer.com, https://bioengineer.org/transforming-surface-science-unveiling-local-dielectric-properties-through-advanced-visualization-techniques/, Internet
Mar. 2025 - Transforming Surface Science: Unveiling Local Dielectric Properties through Advanced Visualization Techniques
Scienmag: Morning News, https://scienmag.com/transforming-surface-science-unveiling-local-dielectric-properties-through-advanced-visualization-techniques/, Internet
Mar. 2025 - Visualizing Local Dielectric Properties of Surfaces
MIRAGE, https://www.miragenews.com/visualizing-local-dielectric-properties-of-1421847/, Internet
Mar. 2025 - Revolutionizing surface science: Visualization of local dielectric properties of surfaces
EurekAlert, https://www.eurekalert.org/news-releases/1076145, Internet
Mar. 2025
Academic Contribution Activities
- 日本表面真空学会常務理事
Academic society etc, Planning etc, 日本表面真空学会, 01 May 2024 - Present - International committee for 31st PPC Symposium on Petroleum, Petrochemicals, and Polymers and the 16th Research Symposium on Petrochemical and Materials Technology (PPC & PETROMAT 2025)
Competition etc, Planning etc, 25 Jun. 2025 - 27 Jun. 2025, Thailand, True - 日本工学アカデミージェンダー委員会シンポジウム
Competition etc, Panel chair etc, 日本工学アカデミー, 06 May 2022 - 06 May 2022
