Master in Engineering, Waseda University

博士(工学), カルフォルニア大学バークレー校　大学院　材料科学専攻

Doctor of Philosophy in Engineering, Department of Materials Science, University of California, Berkeley

HD-LED semiconductor optical and electrical characterization

半導体物性評価

発光ダイオード

有機金属気相成長法

化合物半導体

Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electronic devices and equipment

Nanotechnology/Materials, Thin-film surfaces and interfaces

Nanotechnology/Materials, Crystal engineering

May 1994
The University of California, Berkeley, Graduate School, Division of Materials Science, Electronic Material, United States

Mar. 1985
Waseda University, Graduate School, Division of Science and Engineering, 金属工学専攻

Mar. 1983
Waseda University, Faculty of Science and Engineering, 金属工学科

Waseda High School

Growth and characterization of n-type Ga2O3 films on sapphire substrates by APMOVPE
Shun Ukita; Takeyoshi Tajiri; Kazuo Uchida
Journal of Crystal Growth, Elsevier BV, 650, 128007-128013, Jan. 2025, Peer-reviwed
Scientific journal

Fabrication and characterization of an AlGaN light emitting diode with Al-doped ZnO as a current spreading tunnel junction layer
Shun Ukita; Takeyoshi Tajiri; Kazuo Uchida
AIP Advances, AIP Publishing, 13, 9, 01 Sep. 2023, Peer-reviwed, We fabricated an AlGaN light emitting diode (LED) with a heavily Al-doped n-type ZnO layer on a p-type contact layer as a tunnel junction (TJ) to improve carrier injection into the LED. We characterized its electrical and optical properties and compared them to those of an AlGaN LED without ZnO. From the I–V characteristic of the LED with ZnO, we observed a threshold voltage of circa 2 V, which could be due to Zener breakdown of the type II heterostructure of n-ZnO/p-GaN as a TJ. From the electroluminescence measurement, we observed a similar emission peak in both AlGaN LEDs at ultraviolet (UV) wavelengths, but a broad emission band around 365 nm in the LED with ZnO. This emission could be originating from ZnO photoexcited by the UV LED emission. The dependence of these peak intensities on input currents shows that there is a monotonic increase in the light emission intensity for the UV LED emission, but a saturation behavior after the threshold voltage for the emission from the ZnO. This saturation behavior is attributed to an overflow of photoexcited electron–hole pairs into p-GaN, strongly suggesting that n-ZnO/p-GaN works as a TJ. Electroluminescence data also show that the presence of the ZnO film facilitates current spreading, which enables device operation at large input currents. Therefore, ZnO can work as a current spreading TJ layer and improve the performance of the AlGaN LED.
Scientific journal

Fabrication and optical characterization of GaN micro-disk cavities undercut by laser-assisted photo-electrochemical etching
T. Tajiri, S. Sosumi, K. Shimoyoshi, and K. Uchida
Japanese Journal of Applied Physics, The Japan Society of Applied Physics, 62/ SC1069, 4S, 1-5, 14 Feb. 2023, Peer-reviwed, False, Abstract

GaN micro-disk cavities undercut by laser-assisted photo-electrochemical (PEC) etching are fabricated and optically characterized. The laser source used in the PEC etching is tuned to be absorbed by the InGaN/GaN superlattice beneath the GaN disk to selectively etch the superlattice. Whispering gallery modes (WGMs) in fabricated GaN micro-disk cavities are evaluated by micro-photoluminescence spectroscopy of light emission from the embedded InGaN quantum wells. Quality factors estimated for the WGMs reach approximately 6700 at blue-violet wavelengths. Detailed analysis suggests that the high-Q WGMs are the fundamental WGMs. These results indicate the high applicability of laser-assisted PEC etching to the fabrication of air-clad GaN micro-cavities.
Scientific journal, English

Mode analysis of GaN two-dimensional photonic crystal nanocavities undercut by photo-electrochemical etching
Takeyoshi Tajiri, Masato Yoshida, Sho Sosumi, Kenshin Shimoyoshi and Kazuo Uchida
Japanese Journal of Applied Physics, The Japan Society of Applied Physics (in press), 0, 0, 1-17, 09 Feb. 2023, Peer-reviwed, False, Abstract

GaN two-dimensional (2D) photonic crystal nanocavities with a single embedded InGaN quantum well are undercut by photo-electrochemical (PEC) etching and optically characterized to investigate the fundamental mode. The PEC etching selectively removes an InGaN-based sacrificial layer to form air-suspended GaN photonic crystal cavity slabs. We investigated the resonant modes of the photonic crystal nanocavities by micro-photoluminescence spectroscopy measurement at room temperature. The wavelengths of the measured resonant peaks and their dependence on the photonic crystal period agreed well with numerical analysis, allowing us to determine the fundamental mode in the measured spectra. The highest quality factor for the fundamental mode reached 3400 at blue wavelengths. This work would contribute to the improvement of GaN 2D photonic crystal nanocavities using PEC etching as well as their applications towards integrated light sources in visible wavelengths.
Scientific journal, English

Deep level characterization improved by Laplace charge transient spectroscopy
Shumpei Koike; Kazuo Uchida; Shinji Nozaki
International Journal of Engineering and Applied Sciences, International Journal of Engineering and Applied Sciences, 5, 2, 66-69, Feb. 2018, Peer-reviwed
Scientific journal, English

Development of Laser Lift-off Process with a GaN/Al0.7Ga0.3N Strained-Layer Superlattice for Vertical UVC LED Fabrication
David Trung Doan; Shinji Nozaki; Kazuo Uchida
International Journal of Engineering and Applied Sciences, IJEAS, 4, 4, 51-56, 01 Apr. 2017, Peer-reviwed
Scientific journal, English

ZnO-nanorods: A Possible White LED Phosphor
Sachindra Nath Sarangi; T. Arun; Dinseh K. Ray; Pratap Kumar Sahoo; Shinji Nozaki; Noriyuki Sugiyama; Kazuo Uchida
61ST DAE-SOLID STATE PHYSICS SYMPOSIUM, 1832, 060022-1-060022-3, 2017, Peer-reviwed
International conference proceedings, English

Growth mechanism of single-crystalline NiO thin films grown by metal organic chemical vapor
Teuku Muhammad Roffi; Shinji Nozaki; Kazuo Uchida
JOURNAL OF CRYSTAL GROWTH, 451, 57-64, Oct. 2016, Peer-reviwed
Scientific journal, English

InGaP/GaAs heterojunction photosensor powered by an on-chip GaAs solar cell for energy harvesting
Phuc Hong Than; Kazuo Uchida; Takahiro Makino; Takeshi Oshima; Shinji Nozaki
Japanese Journal of Applied Physics, 55, 4S, 04ES09-1-04ES09-6, 16 Mar. 2016, Peer-reviwed
Scientific journal, English

Effects of Electrical Stress on the InGaP/GaAs Heterojunction Phototransistor
Phuc Hong Than; Kazuo Uchida; Shinji Nozaki
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 15, 4, 604-609, Dec. 2015, Peer-reviwed
Scientific journal, English

Effects of electrical stress on the InGaP/GaAs heterojunction phototransistors
Phuc Hong Than; Kazuo Uchida; Shinji Nozaki
IEEE Transactions on Device and Materials Reliability, IEEE, 15, 4, 1-6, Dec. 2015, Peer-reviwed
Scientific journal, English

Low-temperature formation of high-quality gate oxide by ultraviolet irradiation on spin-on-glass
R. Usuda; K. Uchida; S. Nozaki
APPLIED PHYSICS LETTERS, 107, 18, 182903-1-182903-4, Nov. 2015, Peer-reviwed
Scientific journal, English

Visible-blind ultraviolet photodiode fabricated by UVoxidation of metallic zinc on p-Si
Dongyuan Zhang; Kazuo Uchida; Shinji Nozaki
JOURNAL OF APPLIED PHYSICS, 118, 9, 094502-1-094502-8, Sep. 2015, Peer-reviwed
Scientific journal, English

Structural, electrical, and optical properties of CoxNi1-xO films grown by metalorganic chemical vapor deposition
Teuku Muhammad Roffi; Kazuo Uchida; Shinji Nozaki
JOURNAL OF CRYSTAL GROWTH, 414, 123-129, Mar. 2015, Peer-reviwed
Scientific journal, English

New Task and Ambient Lighting System with Dual Light Distributions
Kazuo Uchida; Goro Terumichi
2015 IEEE INTERNATIONAL CONFERENCE ON BUILDING ENERGY EFFICIENCY AND SUSTAINABLE TECHNOLOGIES (ICBEST), ICBEST2015, 1-4, 2015, Peer-reviwed
International conference proceedings, English

Effects of Electrical Stress and High-Energy Electron Irradiation on the InGaP/GaAs Heterojunction Phototransistor
P. H. Than; K. Uchida; T. Makino; T. Ohshima; S. Nozaki
Mat. Res. Soc. Symp. Proc., 1792, 2015, Peer-reviwed
International conference proceedings, English

NiO/Si heterostructures formed by UV oxidation of nickel deposited on Si substrates
Dongyuan Zhang; Shinji Nozaki; Kazuo Uchida
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 32, 3, 0131202-1-0131202-6, May 2014, Peer-reviwed
Scientific journal, English

High-quality gate oxide formed at 150 °c for flexible electronics
Yasuhiro Iijima; Ryo Usuda; Kazuo Uchida; Shinji Nozaki
Japanese Journal of Applied Physics, 53, 8, 08LC05-1-08LC05-5, 2014, Peer-reviwed
International conference proceedings, English

Hydrothermal growth of zinc oxide nanorods and glucose-sensor application
Shinji Nozaki; Sachindra N. Sarangi; Kazuo Uchida; Surendra Sahu
Soft Nanoscience Letters, 3, -, 23-26, Dec. 2013, Peer-reviwed
Scientific journal, English

Highly p-typed superlattices consist of undoped InAs and carbon-doped GaAs layers
Kazuo Uchida; Heisuke Kanaya; Hiroshi Imanishi; Atushi Koizumi; Shinji Nozaki
Journal of Crystal Growth, 370, 197-199, 01 May 2013, Peer-reviwed
Scientific journal, English

Characterization of partially ordered GaInP/GaAs heterointerfaces by the quantum Hall effect
Kazuo Uchida; Kiwamu Satoh; Keita Asano; Atsushi Koizumi; Shinji Nozaki
Journal of Crystal Growth, 370, 136-140, 01 May 2013, Peer-reviwed
Scientific journal, English

Selective growth of ZnO nanorods by the hydrothermal technique
Shinji Nozaki; Sachin N Sarangi; Surendra N Sahu; Kazuo Uchida
Advances in Natural Sciences: Nanoscience and Nanotechnology, 4, 1, 015008, Mar. 2013, Peer-reviwed
Scientific journal, English

E-1/E-2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy
A. Koizumi; V. P. Markevich; N. Iwamoto; S. Sasaki; T. Ohshima; K. Kojima; T. Kimoto; K. Uchida; S. Nozaki; B. Hamilton; A. R. Peaker
APPLIED PHYSICS LETTERS, 102, 3, 032104-1 – 032104-4, Jan. 2013, Peer-reviwed
Scientific journal, English

InGaP/GaAsヘテロ接合フォトトランジスタの温度特性
Phuc Hong THAN; 高木保志; 内田和男; 野崎眞次
電子情報通信学会論文誌 C, The Institute of Electronics, Information and Communication Engineers, J96-C, 9, 238-244, 2013, Peer-reviwed, InGaP/GaAsヘテロ接合バイポーラトランジスタ(HBT)の温度特性はこれまで多く調べられ,報告されているが,InGaP/GaAsヘテロ接合フォトトランジスタ(HPT)の温度特性についてはほとんど報告例がない.本研究では,白色光に対する光応答の高感度検出への応用を目的に,InGaP/GaAs HPTを作製し,300〜400Kの温度範囲でInGaP/GaAs HPTの電流利得β及び受光感度Sを測定した.その結果,電流利得βは温度とともに減少し,受光感度Sは320Kまで増加するがその後は減少した.これらの実験結果は,HPTの三端子等価回路により説明された.また,HBTにおいて露出した高濃度GaAsベース表面でのキャリヤの再結合を抑制し,電流利得を高めるエミッタレッジパッシベーションのHPTにおける効果も検証した.エミッタレッジパッシベーションは,HPTにおいても全ての測定温度で高い電流利得β及び受光感度Sを維持するのに有効であった.特にエミッタレッジパッシベーションは,HBT以上にHPTの高性能化に貢献することが明らかとなった.
Scientific journal, Japanese

Effect of O2/Ni ratio on structure and surface morphology of atmospheric pressure MOCVD grown NiO thin films
Teuku M. Roffi; Motohiko Nakamura; Kazuo Uchida; Shinji Nozaki
Materials Research Society Symposium Proceedings, Materials Research Society, 1577, 42-47, 2013, Peer-reviwed
International conference proceedings, English

Fabrication of a p-NiO/n-Si heterojunction diode by UV oxidation of Ni deposited on n-Si
Dongyuan Zhang; Kazuo Uchida; Shinji Nozaki
Materials Research Society Symposium Proceedings, 1494, 305-309, 2013, Peer-reviwed
International conference proceedings, English

Intense ultraviolet photoluminescence observed at room temperature from NiO nano porous thin films grown by the hydrothermal technique
Sachindra Nath Sarangi; Dongyuan Zhang; Pratap Kumar Sahoo; Kazuo Uchida; Surendra Nath Sahu; Shinji Nozaki
Materials Research Society Symposium Proceedings, 1494, 203-208, 2013, Peer-reviwed
International conference proceedings, English

Synthesis, properties and applications of germanium nanocrystals
Shinji Nozaki; Hiroshi Ono; Kazuo Uchida; Hiroshi Morisaki
Advances in Nanotechnology, Nova Science Publishers, Inc., 9, 149-156, 01 Jan. 2012
In book, English

High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy
Kazuo Uchida; Ken-Ichi Yoshida; Dongyuan Zhang; Atsushi Koizumi; Shinji Nozaki
AIP Advances, 2, 4, 042154-1-042154-5, 2012, Peer-reviwed
Scientific journal, English

Defects in an Electron-Irradiated 6H-SiC Diode Studied by Alpha Particle Induced Charge Transient Spectroscopy: Their Impact on the Degraded Charge Collection Efficiency
N. Iwamoto; A. Koizumi; S. Onoda; T. Makino; T. Ohshima; K. Kojima; S. Koike; K. Uchida; S. Nozaki
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 717-720, 267-+, 2012, Peer-reviwed
International conference proceedings, English

Single-Alpha-Particle-Induced Charge Transient Spectroscopy of the 6H-SiC p(+)n Diode Irradiated With High-Energy Electrons
Naoya Iwamoto; Atsushi Koizumi; Shinobu Onoda; Takahiro Makino; Takeshi Ohshima; Kazutoshi Kojima; Shunpei Koike; Kazuo Uchida; Shinji Nozaki
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 58, 6, 3328-3332, Dec. 2011, Peer-reviwed
Scientific journal, English

Transient Analysis of an Extended Drift Region in a 6H-SiC Diode Formed by a Single Alpha Particle Strike and Its Contribution to the Increased Charge Collection
N. Iwamoto; S. Onoda; T. Makino; T. Ohshima; K. Kojima; A. Koizumi; K. Uchida; S. Nozaki
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 58, 1, 305-313, Feb. 2011, Peer-reviwed
Scientific journal, English

In situ CBrCl3 etching to control size and density of InAs/GaAs quantum dots
Atsushi Koizumi; Hiroshi Imanishi; Kazuo Uchida; Shinji Nozaki
JOURNAL OF CRYSTAL GROWTH, 315, 1, 106-109, Jan. 2011, Peer-reviwed
Scientific journal, English

Compensation-dependent carrier transport of Al-doped p-type 4H-SiC
Atsushi Koizum; Naoya Iwamoto; Shinobu Onoda; Takeshi Ohshima; Tsunenobu Kimoto; Kazuo Uchida; Shinji Nozaki
Materials Science Forum, 679-680, 201-204, 2011, Peer-reviwed
International conference proceedings, English

Improvement of high-power-white-LED lamp performance by liquid injection
T. M. Roffi; I. Idris; K. Uchida; S. Nozaki; N. Sugiyama; H. Morisaki; F. X.N. Soelami
Proceedings of the 2011 International Conference on Electrical Engineering and Informatics, ICEEI 2011, IEEE, 1-6, 2011, Peer-reviwed
International conference proceedings, English

Comparative Study on Reliability of InP/InGaAs Heterojunction Bipolar Transistors with Highly Zn- and C-Doped Base Layers
Atsushi Koizumi; Kazuki Oshitanai; Jaesung Lee; Kazuo Uchida; Shinji Nozaki
RELIABILITY AND MATERIALS ISSUES OF SEMICONDUCTOR OPTICAL AND ELECTRICAL DEVICES AND MATERIALS, 1195, 2010, Peer-reviwed
International conference proceedings, English

Charge Collection Efficiency of 6H-SiC P+N Diodes Degraded by Low-Energy Electron Irradiation
N. Iwamoto; S. Onoda; T. Ohshima; K. Kojima; A. Koizumi; K. Uchida; S. Nozaki
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 645-648, 921-+, 2010, Peer-reviwed
International conference proceedings, English

Comparative Study on Reliability of InP/InGaAs Heterojunction Bipolar Transistors with Highly Zn- and C-Doped Base Layers
Atsushi Koizumi; Kazuki Oshitanai; Jaesung Lee; Kazuo Uchida; Shinji Nozaki
RELIABILITY AND MATERIALS ISSUES OF SEMICONDUCTOR OPTICAL AND ELECTRICAL DEVICES AND MATERIALS, 1195, 35-42, 2010, Peer-reviwed
International conference proceedings, English

Compensation-dependent carrier transport of Al-doped p-type 4H-SiC
A. Koizumi; N. Iwamoto; S. Onoda; T. Ohshima; T. Kimoto; K. Uchida; S. Nozaki
Abstract of ECSCRM8th, TP-230, 2010, Peer-reviwed
International conference proceedings, English

Characterization of MOVPE-grown p-InGaAs/n-InP interfaces
Kazuo Uchida; HIdenori Yamato; Yoshikuni Tommioka; Atsushi Koizumi; Shinji Nozaki
Journal of Crystal Growth, 311, 16, 4011-4015, Jul. 2009, Peer-reviwed
Scientific journal, English

High-quality oxide formed by evaporation of SiO nanopowder: Application to MOSFET’s on plastic substrates and GaN epilayers
S. Nozaki; S. Kimura; A. Koizumi; H. Ono; K. Uchida
Materials Science in Semiconductor Processing, 11, 384-389, 2009, Peer-reviwed
Scientific journal, English

High-quality oxide formed by evaporation of SiO nanopowder: Application to MOSFET’s on plastic substrates and GaN epilayers
S. Nozaki; S. Kimura; A. Koizumi; H. Ono; K. Uchida
Materials Science in Semiconductor Processing, 11, 384-389, Jan. 2009, Peer-reviwed
Scientific journal, English

InGaP/GaAs HETEROINTERFACES STUDIED BY CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPY AND THEIR IMPACT ON THE DEVICE CHARACTERISTICS
S. Nozaki; A. Koizumi; K. Uchida; H. Ono
PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES, 18-+, 2009, Peer-reviwed
International conference proceedings, English

Photoluminescence of Si nanocrystals formed by the photosynthesis
S. Nozaki; C. Y. Chen; S. Kimura; H. Ono; K. Uchida
THIN SOLID FILMS, 517, 1, 50-54, Nov. 2008, Peer-reviwed
Scientific journal, English

Growth and optical properties of SnO2 ultra-small nanorods by the novel micelle technique
S. Rath; S. Nozaki; H. Ono; K. Uchida; S. Kojima
Materials Research Society Mat. Res. Soc. Symp. Proc., 1087, 29, 2008, Peer-reviwed
International conference proceedings, English

Photo-modification and synthesis of semiconductor nanocrystals
S. Nozaki; C. Y. Chen; H. Ono; K. Uchida
SURFACE SCIENCE, 601, 13, 2549-2554, Jul. 2007, Peer-reviwed
Scientific journal, English

Yellowish-white photoluminescence from ZnO nanoparticles doped with Al and Li
J. Nayak; S. Kimura; S. Nozaki; H. Ono; K. Uchida
SUPERLATTICES AND MICROSTRUCTURES, 42, 1-6, 438-443, Jul. 2007, Peer-reviwed
Scientific journal, English

Mechanically strong ultralow-k nanoporous silica made of SiOx nanoparticles
Shinji Nozaki; Hiroshi Ono; Kazuo Uchida
Advanced Metallization Conference 2006 (AMC 2006), 413-417, 2007, Peer-reviwed
International conference proceedings, English

Correlation between the base-emitter interface crystalline quality and the current gain in InGaP/GaAs HBTs grown by MOVPE
K. Uchida; A. Kurokawa; F. Yang; Z. Jin; S. Nozaki; H. Morisaki
Jornal of Crystal Growth, 298, 861-866, Nov. 2006, Peer-reviwed
Scientific journal, English

Selective formation of size-controlled silicon nanocrystals by photosynthesis in SiO nanoparticle thin film
Changyong Chen; Seiji Kimura; Shinji Nozaki; Hiroshi Ono; Kazuo Uchida
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 5, 6, 671-676, Nov. 2006, Peer-reviwed
Scientific journal, English

Passivation of InP-based HBTs
Z. JIn; K. Uchida; S. Nozaki; W. Prost; F.-J. Tegude
Applied surface science, 252, 7664-7670, May 2006, Peer-reviwed
Scientific journal, English

Position and size-controlled photosynthesis of silicon nanocrystals in SiO2 films
C. Y. Chen; S. Kimura; S. Sen; S. Nozaki; H. Ono; K. Uchida; H. Morisaki
2006 IEEE CONFERENCE ON EMERGING TECHNOLOGIES - NANOELECTRONICS, 289-+, 2006, Peer-reviwed
International conference proceedings, English

Synthesis, properties and applications of germanium nanocrystals
Shinji Nozaki; Hiroshi Ono; Kazuo Uchida; Hiroshi Morisaki
NANO-SCALE MATERIALS: FROM SCIENCE TO TECHNOLOGY, 35-42, 2006, Peer-reviwed
International conference proceedings, English

Low-temperature formation of high-quality SiOx thin films by evaporation of SiO nanopowder
S. Nozaki; S. Kimura; H. Ono; K. Uchida
The 13th International Workshop on Active-Matrix Flatpanel Displays and Devices (Digest of Technical Papers), 19-22, 2006, Peer-reviwed
International conference proceedings, English

Material Issues in high-frequency GaInP/GaAs heterojunction bipolar transistors
Shinji Nozaki; Hiroshi Ono; Kazuo Uchida; Hiroshi Morisaki
Proceedings of the XIII International Workshop on Physics of Semiconductor Devices, vol. II, 741-747, Dec. 2005, Peer-reviwed
International conference proceedings, English

Self-limited photo-assisted synthesis of silicon nanocrystals
CY Chen; S Kimura; S Seo; S Nozaki; H Ono; K Uchida; H Morisaki
Group-IV Semiconductor Nanostructures, 832, 249-254, 2005
International conference proceedings, English

Self-limited photo-assisted synthesis of silicon nanocrystals
CY Chen; S Kimura; S Seo; S Nozaki; H Ono; K Uchida; H Morisaki
Group-IV Semiconductor Nanostructures, 832, 249-254, 2005, Peer-reviwed
International conference proceedings, English

Low temperature photoluminescence of GaAs/GaInP heterostructures measured under hydrostatic pressure
T Kobayashi; A Nagata; AD Prins; Y Homma; K Uchida; J Nakahara
Physics of Semiconductors, Pts A and B, 772, 1, 931-932, 2005, Peer-reviwed
International conference proceedings, English

Excitation and pressure effects on low temperature photoluminescence from GaAs/GaInP heterostructures
A Nagata; T Kobayashi; AD Prins; Y Homma; K Uchida; J Nakahara
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 241, 14, 3279-3284, Nov. 2004, Peer-reviwed
Scientific journal, English

Fabrication of nanostructured palladium-doped SiO2 films with variable temperature coefficient of resistivity
T Ichinohe; S Masaki; K Uchida; S Nozaki; H Morisaki
THIN SOLID FILMS, 466, 1-2, 27-33, Nov. 2004, Peer-reviwed
Scientific journal, English

Growth and characterization of p-type InGaAs on InP substrates by LP-MOVPE using a new carbon-dopant source, CBrCl3
Kazuo Uchida; Kazuma Takahashi; Shogo Kabe; Shinji Nozaki; Hiroshi Morisaki
Journal of Crystal Growth, 272, 658-663, Oct. 2004, Peer-reviwed
Scientific journal, English

Real-time measurement of rocking curves during MOVPE growth of GaxIn1-xP/GaAs
S Bhunia; T Kawamura; Y Watanabe; S Fujikawa; J Matsui; Y Kagoshima; Y Tsusaka; K Uchida; N Sugiyama; M Furiya; S Nozaki; H Morisaki
APPLIED SURFACE SCIENCE, 216, 1-4, 382-387, Jun. 2003, Peer-reviwed
Scientific journal, English

Heavily carbon doping of GaAs by MOVPE using a newdopant source CBrCl3 and characterization of the epilayers
K. Uchida; S. Bhunia; N. Sugiyama; M. Furiya; M. Katoh; S. Katoh; S. Nozaki; H. Morisaki
J. Crystal Growth, 248, 124-129, Mar. 2003, Peer-reviwed
Scientific journal, English

Metal organic vapor phase epitaxial growth of heavily carbon-doped GaAs using a dopant source of CCl3Br and quantitative analysis of the compensation mechanism in the epilayers
S Bhunia; K Uchida; S Nozaki; N Sugiyama; M Furiya; H Morisaki
JOURNAL OF APPLIED PHYSICS, 93, 3, 1613-1619, Feb. 2003, Peer-reviwed
Scientific journal, English

Photoluminescence Studies of GaAs/partially ordered GaInP quantum wells grown by metalorganic vapor phase epitaxy
T. Kobayashi; H. Tomoda; A. D. Prins; Y. Homma; K. Uchida; J. Nakahara
Phisica status solidi (b), 235, 2, 277-281, Jan. 2003, Peer-reviwed
Scientific journal, English

A photo-oxidation generated low-k dielectric film deposited by reactive evaporation of SiO
JJ Si; Y Show; S Banerjee; H Ono; K Uchida; S Nozaki; H Morisaki
MICROELECTRONIC ENGINEERING, 60, 3-4, 313-321, Apr. 2002, Peer-reviwed
Scientific journal, English

Real-time observation of surface morphology of indium phosphide MOVPE growth with using X-ray reflectivity technique
T Kawamura; Y Watanabe; S Fujikawa; S Bhunia; K Uchida; J Matsui; Y Kagoshima; Y Tsusaka
JOURNAL OF CRYSTAL GROWTH, 237, 398-402, Apr. 2002, Peer-reviwed
Scientific journal, English

Real-time observation of step-flow limited metal organic vapor phase epitaxial growth of InP and their characteristics
S Bhunia; T Kawamura; Y Watanabe; S Fujikawa; K Uchida; S Nozaki; H Morisaki; J Matsui; Y Kagoshima; Y Tsusaka
COMPOUND SEMICONDUCTORS 2001, 170, 647-652, 2002, Peer-reviwed
Scientific journal, English

Ultralow k nanoporous silica by oxidation of silicon nanoparticles
S Nozaki; H Ono; K Uchida; H Morisaki; N Ito; M Yoshimaru
PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 69-71, 2002, Peer-reviwed
International conference proceedings, English

Real-time observation of surface morphology at nanometer scale using x-ray specular reflection
T. Kawamura; Y. Watanabe; S. Fujikawa; S. Bhunia; K. Uchida; J. Matsui; Y. Kagoshima; Y. Tsusaka
Surf. Interface Anal., 35, 72-75, 2002, Peer-reviwed
Scientific journal, English

Capacitance-Voltage (C-V) hysteresis in the Metal-Oxide-Semiconductor capacitor with Si nanocrystals deposited by the gas evaporation technique
P Mishra; S Nozaki; R Sakura; H Morisaki; H Ono; K Uchida
MATERIALS ISSUES IN NOVEL SI-BASED TECHNOLOGY, 686, 153-158, 2002
International conference proceedings, English

Correlation between the dielectric constant and porosity of nanoporous silica thin films deposited by the gas evaporation technique
JJ Si; H Ono; K Uchida; S Nozaki; H Morisaki; N Itoh
APPLIED PHYSICS LETTERS, 79, 19, 3140-3142, Nov. 2001, Peer-reviwed
Scientific journal, English

Spectroscopic study of partially ordered semiconductor heterojunction under high pressure and high magnetic field
PY Yu; G Martinez; J Zeman; K Uchida
JOURNAL OF RAMAN SPECTROSCOPY, 32, 10, 835-839, Oct. 2001, Peer-reviwed
Scientific journal, English

In-situ study of growth mode by reflection of synchrotron x-ray during the metal organic vapor phase epitaxial growth of InP（共著）
S. Bhunia; K. Uchida; S. Nozaki; H. Morisaki; T. Kawamura; Y. Watanabe; S. Fujikawa; J. Matsui; Y. Kagoshima; Y. Tsusaka
International Conference on Crystal Growth - 13 in Conjunction with Vapor Growth and Epitaxy - 11, Kyoto, Japan, July 30 - Aug. 4., ?, Jul. 2001
International conference proceedings, English

Raman scattering studies of the ZnSe/GaAs interface
P. Y. Yu; G. Martinez; J. Zeman; K. Uchida
Journal of Raman Spectroscopy, 32, 10, 852-856, 2001, Peer-reviwed
Scientific journal, English

Wurtzite silicon nanocrystals deposited by the cluster-beam evaporation technique
JY Zhang; H Ono; K Uchida; S Nozaki; H Morisaki
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 223, 1, 41-45, Jan. 2001, Peer-reviwed
Scientific journal, English

High pressure photoluminescence study of the GaAs/partially ordered GaInP interface
T Kobayashi; K Inoue; AD Prins; K Uchida; J Nakahara
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 223, 1, 123-128, Jan. 2001, Peer-reviwed
Scientific journal, English

Study on pressure working time and releasing rate for phase transformation of Ge
M Oh-Ishi; S Akiyama; K Uchida; S Nozaki; H Morisaki
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 223, 2, 391-395, Jan. 2001, Peer-reviwed
Scientific journal, English

A study of the GaAs/partially ordered GaInP interface
T Kobayashi; K Inoue; AD Prins; K Uchida; J Nakahara
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 87, 1, 473-474, 2001, Peer-reviwed
International conference proceedings, English

Formation of Ge nanocrystals passivated with Si by gas evaporation of Si and Ge
J. J. Si; H. Ono; K. Uchida; S. Nozaki; H. Morisaki
638, F14.4.1, Nov. 2000, Peer-reviwed
International conference proceedings, English

Influence of short-range ordering on roughness of (AlGa)As interfaces studied with cross-sectional scanning tunneling microscopy
TCG Reusch; M Wenderoth; AJ Heinrich; KJ Engel; N Quaas; K Sauthoff; RG Ulbrich; ER Weber; K Uchida; W Wegscheider
APPLIED PHYSICS LETTERS, 76, 26, 3882-3884, Jun. 2000, Peer-reviwed
Scientific journal, English

High-pressure study of deep emission band at GaAs/partially ordered GaInP interface
T Kobayashi; T Ohmae; T Ito; K Uchida; J Nakahara
JOURNAL OF LUMINESCENCE, 87-9, 408-410, May 2000, Peer-reviwed
Scientific journal, English

An analysis of temperature dependent piezoelectric Franz-Keldysh effect in AlGaN
YT Hou; KL Teo; MF Li; K Uchida; H Tokunaga; N Akutsu; K Matsumoto
APPLIED PHYSICS LETTERS, 76, 8, 1033-1035, Feb. 2000, Peer-reviwed
Scientific journal, English

Ultralow KSiO2 thin films with nano-voids by gas-evaporation technique
S Nozaki; S Banerjee; K Uchida; H Ono; H Morisaki
PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 140-142, 2000
International conference proceedings, English

Selective excitation and thermal quenching of the yellow luminescence of GaN
JS Colton; PY Yu; KL Teo; ER Weber; P Perlin; Grzegory, I; K Uchida
APPLIED PHYSICS LETTERS, 75, 21, 3273-3275, Nov. 1999, Peer-reviwed
Scientific journal, English

自然超格子を有するGaInP/GaAsヘテロ構造におけるホトルミネッセンス・アップコンバージョンの高圧及び高磁場を用いた研究
内田和男; P. Yu; J. Zeman; G. Martinez; 松本功
The Transactions of the Institute of Electronics, Information and Communication Engineers C-II, The Institute of Electronics, Information and Communication Engineers, J82-C II, 7, 392-397, Jul. 1999, Peer-reviwed, Metal-Organic Vapor Phase Epitaxy法で成長した自然超格子を有するGaInPとGaAsで構成されるシングルへテロ構造において観察されたホトルミネッセンスアップコンバージョン(PLU)を高磁場, 静水圧下で評価した. 高磁場による実験より, PLUを示すサンプルはタイプIIのGaInP/GaAsバンド不連続とGaInP中に局在する発光中心を有することが明らかとなった. また一連のサンプルの中でPLUを示さないタイプIのGaInP/GaAsバンド不連続を有するサンプルに1.2GPaの静水圧を加えることでバンド不連続をタイプIIに調整することにより, PLUが観察され, これら結果よりタイプIIバンド不連続がPLU具現化のための条件の一つであることが確認された.
Scientific journal, English

Nanometer size determination of type-II domains in CuPt-ordered GaInP2 with high-pressure magneto-luminescence
J Zeman; S Jullian; G Martinez; PY Yu; K Uchida
EUROPHYSICS LETTERS, 47, 2, 260-266, Jul. 1999, Peer-reviwed
Scientific journal, English

Short-range ordering in AlxGa1-xAs grown with metal-organic vapor-phase epitaxy
AJ Heinrich; M Wenderoth; KJ Engel; TCG Reusch; K Sauthoff; RG Ulbrich; ER Weber; K Uchida
PHYSICAL REVIEW B, 59, 15, 10296-10301, Apr. 1999, Peer-reviwed
Scientific journal, English

Pressure dependence of photoluminescence in GaAs/partially ordered GaInP interface
T Kobayashi; T Ohmae; K Uchida; J Nakahara
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 38, 2B, 1004-1007, Feb. 1999, Peer-reviwed
Scientific journal, English

Time-resolved photoluminescence study of GaAs ordered GaInP interface under high pressure
T Kobayashi; A Matsui; T Ohmae; K Uchida; J Nakahara
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 211, 1, 247-253, Jan. 1999, Peer-reviwed
Scientific journal, English

GaAs/(ordered)GaInP2 heterostructures under pressure and high magnetic fields
J Zeman; G Martinez; PY Yu; SH Kwok; K Uchida
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 211, 1, 239-246, Jan. 1999, Peer-reviwed
Scientific journal, English

Temperature dependent of piezoelectric effect in GaN
Y. T. Hou; K. L. Teo; M. F. Li; K. Uchida; H. Tokunaga; N. Akutsu; K.Matsumoto
Appl. Phys. Lett., 76, 1033-1035, 1999, Peer-reviwed
English

Piezoelectric Franz-Keldysh effect in a GaN/InGaN/AlGaN multilayer structure
YT Hou; KL Teo; MF Li; K Uchida; H Tokunaga; N Akutsu; K Matsumoto
PHOTONICS TECHNOLOGY INTO THE 21ST CENTURY: SEMICONDUCTORS, MICROSTRUCTURES, AND NANOSTRUCTURES, 3899, 46-53, 1999, Peer-reviwed
International conference proceedings, English

Folding of X-point phonons and conduction-band valleys in partially CuPt-ordered Ga0.52In0.48P grown on GaAs
SH Kwok; PY Yu; K Uchida
PHYSICAL REVIEW B, 58, 20, 13395-13398, Nov. 1998, Peer-reviwed
Scientific journal, English

Optical studies of GaInP(ordered)/GaAs and GaInP(ordered)/GaP/GaAs heterostructures
SH Kwok; PY Yu; J Zeman; S Jullian; G Martinez; K Uchida
JOURNAL OF APPLIED PHYSICS, 84, 5, 2846-2854, Sep. 1998, Peer-reviwed
Scientific journal, English

An analysis of temperature dependent photoluminescence line shapes in InGaN
KL Teo; JS Colton; PY Yu; ER Weber; MF Li; W Liu; K Uchida; H Tokunaga; N Akutsu; K Matsumoto
APPLIED PHYSICS LETTERS, 73, 12, 1697-1699, Sep. 1998, Peer-reviwed
Scientific journal, English

The study of piezoelectric effect in wurtzite GaN/InGaN/AlGaN multilayer structures
W Liu; KL Teo; MF Li; SJ Chua; K Uchida; H Tokunaga; N Akutsu; K Matsumoto
JOURNAL OF CRYSTAL GROWTH, 189, 648-651, Jun. 1998, Peer-reviwed
Scientific journal, English

Phonon-assisted photoliminescence in wurtzite GaN epilayer
W. Liu; M. F. Li; S. J. Xu; Kazuo Uchida; Koh Matsumoto
Semiconductor Science and Technology, 13, 769-772, Jun. 1998, Peer-reviwed
Scientific journal, English

Electron confinement in (ordered)GaInP2/GaAs/(ordered)GaInP2 single quantum well
J Zeman; G Martinez; SH Kwok; PY Yu; K Uchida
PHYSICA B-CONDENSED MATTER, 249, 735-739, Jun. 1998, Peer-reviwed
Scientific journal, English

Ordering in ternary compound semiconductors studied with cross-sectional scanning tunneling microscopy
AJ Heinrich; M Wenderoth; MA Rosentreter; K Engel; MA Schneider; RG Ulbrich; ER Weber; K Uchida
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 66, S959-S962, Mar. 1998, Peer-reviwed
Scientific journal, English

Pressure dependence of photoluminescence in GaAs/ordered GaInP interface
T. Kobayashi; T. Ohmae; K. Uchida; J. Nakahara
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, IEEE, 389-392, 1998
International conference proceedings, English

Investigation of phonon-assisted photoluminescence in wurtzite GaN epilayer
W Liu; MF Li; SJ Xu; K Uchida; K Matsumoto
OPTOELECTRONIC MATERIALS AND DEVICES, 3419, 27-34, 1998, Peer-reviwed
International conference proceedings, English

GaN room temperature exciton spectra by photovoltaic measurement
W Liu; MF Li; SJ Chua; YH Zhang; K Uchida
NITRIDE SEMICONDUCTORS, 482, 593-598, 1998, Peer-reviwed
International conference proceedings, English

High pressure studies of quantum well emission and deep emission in GaInP(ordered)-GaAs heterostructures
SH Kwok; PY Yu; K Uchida; T Arai
HIGH-PRESSURE MATERIALS RESEARCH, 499, 195-200, 1998
International conference proceedings, English

A study of band alignment in GaAs/GaInP(partially ordered) heterostructures with high pressure
K Uchida; PY Yu; J Zeman; SH Kwok; KL Teo; ZP Su; G Martinez; T Arai; K Matsumoto
HIGH-PRESSURE MATERIALS RESEARCH, 499, 381-392, 1998, Peer-reviwed
International conference proceedings, English

High-Pressure Study of Deep Emission Band at GaInP/GaAs Interface
Toshihiko Kobayashi; Kazuya Takashima; Kazuo Uchida
Review of High Pressure Science and Technology/Koatsuryoku No Kagaku To Gijutsu, 7, 715-717, 1998, Peer-reviwed
Scientific journal, English

Pressure Dependence of Time-Resolved Photoluminescence in Ordered Ga0.5In0.5P
Naohisa Tsuji; Kazuya Takashima; Toshihiko Kobayashi; Kazuo Uchida; Jun'ichiro Nakahara
Review of High Pressure Science and Technology/Koatsuryoku No Kagaku To Gijutsu, 7, 763-765, 1998, Peer-reviwed
Scientific journal, English

Phonon-assisted photoluminescence in wurtzite GaN epilayer
Liu, Wei; Ming Fu Li; ShiJie Xu; Kazuo Uchida; Koh Matsumoto
Proc. SPIE, 3419, 311905, 1998, Peer-reviwed
International conference proceedings, English

GaN exciton photovoltaic spectra at room temperature
W Liu; MF Li; SJ Chua; YH Zhang; K Uchida
APPLIED PHYSICS LETTERS, 71, 17, 2511-2513, Oct. 1997, Peer-reviwed
Scientific journal, English

Band alignments in GaInP/GaP/GaAs/GaP/GaInP quantum wells
SH Kwok; PY Yu; K Uchida; T Arai
APPLIED PHYSICS LETTERS, 71, 8, 1110-1112, Aug. 1997, Peer-reviwed
Scientific journal, English

Band alignment and photoluminescence up-conversion at the GaAs/(ordered)GaInP2 heterojunction
J Zeman; G Martinez; PY Yu; K Uchida
PHYSICAL REVIEW B, 55, 20, 13428-13431, May 1997, Peer-reviwed
Scientific journal, English

PL spectra of InGaN film grown by MOCVD system with three laminar flow injection reactor
N Akutsu; H Tokunaga; K Uchida; K Matsumoto
REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPLEMENT NO 15, MARCH 1997, 77-82, 1997, Peer-reviwed
International conference proceedings, English

Deep emission band at GaInP/GaAs interface
K Uchida; T Arai; K Matsumoto
JOURNAL OF APPLIED PHYSICS, 81, 2, 771-776, Jan. 1997, Peer-reviwed
Scientific journal, English

III-V nitrides growth by atmospheric-pressure MOVPE with a three layered flow channel
K Uchida; H Tokunaga; Y Inaishi; N Akutsu; K Matsumoto; T Itoh; T Egawa; T Jimbo; M Umeno
III-V NITRIDES, 449, 129-134, 1997
International conference proceedings, English

Time-resolved photoluminescence study of ordered Ga0.5In0.5P under high pressure
T Kobayashi; M Minaki; K Takashima; K Uchida; J Nakahara
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 198, 1, 49-55, Nov. 1996, Peer-reviwed
Scientific journal, English

Mechanisms of photoluminescence upconversion at the GaAs/(ordered) GaInP2 interface
ZP Su; KL Teo; PY Yu; K Uchida
SOLID STATE COMMUNICATIONS, 99, 12, 933-936, Sep. 1996, Peer-reviwed
Scientific journal, English

Magnetic field dependence of up-converted photoluminescence in partially ordered GaInP2/GaAs up to 23 T
J. zeman; G. Martinez; P. Y. Yu; K. Uchdia
493-496, 1996
International conference proceedings, English

Upconversion of near GaAs bandgap photons to GaInP2 emission at the GaAs/(ordered) GaInP2 heterointerface
K. L. Teo; Z. P. Su; P. Y.YU; K. Uchida
489-492, 1996
International conference proceedings, English

The formation of radiative defects at GaAs/GaInP interface
K Uchida; T Arai; K Matsumoto
OPTOELECTRONIC MATERIALS: ORDERING, COMPOSITION MODULATION, AND SELF-ASSEMBLED STRUCTURES, 417, 319-324, 1996, Peer-reviwed
International conference proceedings, English

Raman and photoluminescence studies on atmospheric pressure MOVPE grown GaN on sapphire substrates
T. Suski; J. Krueger; C. Kisielowski; E. Weber; K. Uchida; H. Tokunaga; N. Akutsu; K. Matsumoto
20, 1996
International conference proceedings, English

COMPARATIVE-STUDY OF PHOTOLUMINESCENCE IN ORDERED AND DISORDERED GAINP ALLOYS UNDER HIGH-PRESSURE
H KOJIMA; H KAYAMA; T KOBAYASHI; K UCHIDA; J NAKAHARA
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 56, 3-4, 345-348, Mar. 1995, Peer-reviwed
Scientific journal, English

Control of defects in GaAs/GaInP interface grown by MOVPE
T Arai; K Uchida; H Tokunaga; K Matsumoto
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 196-, 196-201, 539-542, 1995, Peer-reviwed
Scientific journal, English

Raman spectroscopy study on order disordered Ga0.52In0.48P on GaAs grown by MOVPE
K UCHIDA; PY YU; ER WEBER; N NOTO
SEVENTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 261-264, 1995, Peer-reviwed
International conference proceedings, English

COMPARISON BETWEEN PHOTOLUMINESCENCE AND RAMAN-SCATTERING IN DISORDERED AND ORDERED ALLOYS IN GAINP
K UCHIDA; PY YU; N NOTO; Z LILIENTALWEBER; ER WEBER
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 70, 3, 453-466, Sep. 1994, Peer-reviwed
Scientific journal, English

ENERGY OF X CONDUCTION BAND MINIMA IN DISORDERED AND ORDERED GaInP2 ALLOYS
K. Uchida; P.Y. YU; N. Noto; E. R. Webe
Proc. of the 22nd ICPS, 177-180, Aug. 1994, Peer-reviwed
International conference proceedings, English

PRESSURE-INDUCED GAMMA-X CROSSOVER IN THE CONDUCTION-BAND OF ORDERED AND DISORDERED GAINP ALLOYS
K UCHIDA; PY YU; N NOTO; ER WEBER
APPLIED PHYSICS LETTERS, 64, 21, 2858-2860, May 1994, Peer-reviwed
Scientific journal, English

HYDROSTATIC-PRESSURE DEPENDENCE OF EG-100 MEV PHOTOLUMINESCENCE EMISSIONS IN N-TYPE ALGAAS
K UCHIDA; P SEGUY; H WONG; PL SOUZA; PY YU; ER WEBER; K MATSUMOTO
JAPANESE JOURNAL OF APPLIED PHYSICS, VOL 32, SUPPLEMENT 32-1, 32, 1, 246-248, 1993, Peer-reviwed
International conference proceedings, English

PHOTOLUMINESCENCE OF DEEP LEVELS INDUCED BY SUP-PPM H2O IN ALGAAS GROWN BY MOVPE
K MATSUMOTO; K UCHIDA
JOURNAL OF CRYSTAL GROWTH, 115, 1-4, 484-489, Dec. 1991, Peer-reviwed
Scientific journal, English

ANISOTROPY IN THE DOPING CHARACTERISTICS OF DIMETHYLCADMIUM IN GAAS GROWN BY MOVPE ON (100) GAAS
K MATSUMOTO; J HIDAKA; K UCHIDA
JOURNAL OF CRYSTAL GROWTH, 99, 1-4, 329-332, Jan. 1990, Peer-reviwed
Scientific journal, English

THE EFFECTS OF GROWTH TEMPERATURE ON THE DIMETHYL-CD DOPING OF GAAS BY METALORGANIC VAPOR-PHASE EPITAXY - EVIDENCE OF IMPURITY-INDUCED NUCLEATION OF TWO-DIMENSIONAL CLUSTERS
K MATSUMOTO; J HIDAKA; K UCHIDA
JOURNAL OF APPLIED PHYSICS, 65, 10, 3849-3851, May 1989, Peer-reviwed
Scientific journal, English

The effects of growth temperature on the dimethyl-Cd doping of GaAs by MOCVD
K. Matsumoto; J. Hidaka; K. Uchida
J. Appl. Phys., 65, 3849-3851, 1989, Peer-reviwed
Scientific journal, English

MOCVD GROWTH AND CHARACTERIZATION OF GAAS AND GAP GROWN ON SI SUBSTRATES
T SOGA; Y KOHAMA; K UCHIDA; M TAJIMA; T JIMBO; M UMENO
JOURNAL OF CRYSTAL GROWTH, 93, 1-4, 499-503, Nov. 1988, Peer-reviwed
Scientific journal, English

QUALITY IMPROVEMENT OF METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN GAP ON SI BY ASH3 PREFLOW
Y KOHAMA; K UCHIDA; T SOGA; T JIMBO; M UMENO
APPLIED PHYSICS LETTERS, 53, 10, 862-864, Sep. 1988, Peer-reviwed
Scientific journal, English

High quality Gap growth on Si sudstrates by MOCVD
K. Uchida; Y. Kohama; M. Tajima; T. Soga; T. Jimbo; M. Umeno
116, 319-322, 1988, Peer-reviwed
International conference proceedings, English

Nano-Scale Materials: From Science to Technology
Shinji Nozaki; Hiroshi Ono; Kazuo Uchida; Hiroshi Morisaki
Scholarly book, English, Joint work, Nova Science Publishers, Inc., 2006, 1594549109

Spectroscopic Study of the Interface and Band alignment at the GaInP(Partially-ordered)/GaAs Heterojunction using High Pressure and High Magnetic Field. Spontaneous Ordering in Semiconductor Alloys, edited by A. Mascarenhas,
P. Y. Yu; G. Martinez; J. Zeman; K. Uchida
English, Joint work, Kluwer Academic/Plenum Publishers, New York,, 2002

Fabrication and optical characterization of GaN microdisk cavities undercut by laser-assisted photo-electrochemical etching
S. Sho; K. Shimoyoshi; K. Uchida; T. Tajiri
Oral presentation, English, 2022 International Conference on solid-state devices and materials (SSDM), International conference
28 Sep. 2022

TEGaと酸素ガスを用いた大気圧MOVPEによるβ-Ga2O3薄膜の結晶成長
浮田 駿; 中村 海太; 田尻 武義; 内田 和男
Oral presentation, Japanese, 第83回応用物理学会 秋季学術講演会, Domestic conference
23 Sep. 2022

マイクロマニピュレーション法によるGaNスラブ型光ナノ構造の積層
惣角 翔; 吉田 理人; 下吉 賢信; 内田 和男; 田尻 武義
Oral presentation, Japanese, 第83回応用物理学会 秋季学術講演会, Domestic conference
22 Sep. 2022

二段階光電気化学エッチングによるGaN二次元フォトニック結晶共振器の作製と光学評価
吉田 理人; 惣角 翔; 下吉 賢信; 内田 和男; 田尻 武義
Oral presentation, Japanese, 第83回応用物理学会 秋季学術講演会, Domestic conference
21 Sep. 2022

トンネル接合形成を目的としたZnO付加によるAlGaN LEDの発光特性への影響
浮田 駿; SUN ZHENG; 田尻 武義; 内田 和男
Oral presentation, Japanese, 第69回応用物理学会春季学術講演会, Domestic conference
24 Mar. 2022

レーザアシスト光電気化学エッチングによる GaNマイクロディスク共振器の作製と光学評価
下吉 賢信; 浮田 駿; 内田 和男; 田尻 武義
Oral presentation, Japanese, 第82回 応用物理学会 秋季学術講演会, Domestic conference
13 Sep. 2021

Fabrication and characterization of AlGaN p-n diode with n-ZnO as a tunnel junction layer
S.Ukita; J. Morimoto; M. Daikoku; S. Zheng; T. Tajiri; K. Uchida
Oral presentation, English, 2021 International Conference on solid-state devices and materials (SSDM), International conference
08 Sep. 2021

Fabrication of deeply undercut GaN micro-disks by selective photo-electrochemical etching of thick InGaN/GaN superlattice
K. Shimoyoshi; S.Ukita; K. Uchida; T. Tajiri
Oral presentation, English, 2021 International Conference on solid-state devices and materials (SSDM), International conference
08 Sep. 2021

厚膜InGaN系犠牲層の光電気化学エッチングによる中空GaNマイクロディスク構造の作製
下吉 賢信; 浮田 駿; 内田 和男; 田尻 武義
Oral presentation, Japanese, 第68回応用物理学会春季学術講演会, Domestic conference
17 Mar. 2021

p型コンタクト層にn-ZnO層を接合したAlGaN系pnダイオードのEL特性評価
孫 錚; 王 新磊; 森元 諄; 田尻 武義; 内田 和男
Poster presentation, Japanese, 第68回応用物理学会春季学術講演会, Domestic conference
16 Mar. 2021

正孔注入促進に向けたp-AlGaN/n-ZnOトンネル接合のバンド構造解析
浮田 駿; 田尻 武義; 内田 和男
Poster presentation, Japanese, 第68回応用物理学会春季学術講演会, Domestic conference
16 Mar. 2021

紫波長帯にフォトニックバンドギャップを有する窒化ガリウム二次元フォトニック結晶スラブの設計
下吉 賢信; 浮田 駿; 内田 和男; 田尻 武義
Oral presentation, Japanese, 第81回応用物理学会秋季学術講演会, Domestic conference
11 Sep. 2020

p型コンタクト層にn-ZnOトンネル層を有するAlGaN系pnダイオードの作製及び電気的評価
孫 錚; 森元 諄; 大黒 将也; 田尻 武義; 内田 和男
Oral presentation, Japanese, 第81回応用物理学会秋季学術講演会, Domestic conference
10 Sep. 2020

InGaP/GaAs heterointerfaces studied by cross-sectional scanning tunneling microscopy and their impact on the device characteristics
S. Nozaki; A. Koizumi; K. Uchida; H. Ono
Oral presentation, English, Physics, Chemistry and Application of Nanostructures
2009

水熱法によるZnOナノロッドの作製
粕谷仁一; 野崎眞次; 内田和男; 小野 洋
Oral presentation, Japanese
Mar. 2007

酸化銅ナノロッドの太陽電池への応用
崎野晃滋; 野崎眞次; 内田和男; 小野 洋
Oral presentation, Japanese
Mar. 2007

InP/InGaAs HBTデバイスに向けたp型InGaAs層の作製及び、TCADによる評価
芋川 直; 内田和男; 野崎眞次; 小野 洋
Oral presentation, Japanese
Mar. 2007

SiO nanopowder with metastable Si-Si networks
C. Y. Chen; S. Kimura; S. Nozaki; K. Uchida; H. Ono
Oral presentation, English, 電気通信大学・東京農工大学21世紀COEプログラム
Dec. 2006

Mechanically strong ultralow-k nanoporous silica made of SiOx nanoparticles
Shinji Nozaki; Hiroshi Ono; Kazuo Uchida
Oral presentation, Japanese, 電気通信大学・東京農工大学21世紀COEプログラム
Dec. 2006

Bi添加SiOによるワイドギャップ半導体の作製
宮田浩正; 木村誠二; 野崎眞次; 内田和男; 小野 洋
Oral presentation, Japanese, 応用物理学会
Nov. 2006

Ni酸化物の物性評価とp-GaNオーミックコンタクトへの応用
斉藤貴夫; 内田和男; 野崎眞次; 小野 洋
Oral presentation, Japanese, 応用物理学会
Nov. 2006

Mechanically strong ultralow-k nanoporous silica made of SiOx nanoparticles
Shinji Nozaki; Hiroshi Ono; Kazuo Uchida
Oral presentation, English, IEEE
Oct. 2006

走査型トンネル顕微鏡によるGaInP/GaAsへテロ界面の粗さ解析
大塚史之; 渡邊明広; 野崎真次; 内田和男; 小野 洋
Oral presentation, Japanese, 応用物理学会
Sep. 2006

Mechanically strong ultralow-k nanoporous silica made of SiOx nanoparticles
Shinji Nozaki; Hiroshi Ono; Kazuo Uchida
Oral presentation, Japanese, 応用物理学会
Sep. 2006

Yellowish-white photoluminescence from ZnO nanoparticles
J. Nayak; S. Nozaki; H. Ono; K. Uchida
Oral presentation, English, E-MRS
May 2006

自然超格子を有するInGaP/GaAs HBTへテロ接合界面におけるバンド不連続の研究
触澤宣晶; 小野 洋; 内田和男; 野崎眞次; 森崎 弘
Oral presentation, Japanese, 応用物理学会
Mar. 2006

表面プラズモン効果を用いたラマン分光法による低密度のGe超微粒子の分析
寺田 力; セン・ソマディティヤ; 小野 洋; 内田和男; 野崎眞次; 森崎 弘
Oral presentation, Japanese, 応用物理学会
Mar. 2006

InGaP/GaAsヘテロ接合バイポーラトランジスタ特性への表面再結合の影響
黒川愛里; 金 智; 小野 洋; 内田和男; 野崎眞次; 森崎 弘
Oral presentation, Japanese, 電子情報通信学会
Jan. 2006

バラスト抵抗用Ni微粒子混合誘電体薄膜の作製と評価
横山 彩; 野崎眞次; 内田和男; 小野 洋; 森崎 弘
Oral presentation, Japanese
Nov. 2005

BiドープSiOx導電膜の特性評価
牛田賢志; 木村誠二; 森崎 弘; 野崎眞次; 内田和男; 小野 洋
Oral presentation, Japanese
Nov. 2005

NiO薄膜を用いたp-GaNオーミックコンタクトに関する研究
内藤寛人; 斉藤貴夫; 小野 洋; 内田和男; 野崎眞次; 森崎 弘
Oral presentation, Japanese
Nov. 2005

バラスト抵抗用Ni微粒子混合Si3N4薄膜の作製と評価
横山 彩; 野崎眞次; 内田和男; 小野 洋; 森崎 弘
Oral presentation, Japanese, 電気学会
Oct. 2005

走査型トンネル顕微鏡によるGaInP氏前兆格子構造の観察
平川長規; 大塚史之; 野崎真次; 小野 洋; 内田和男; 森崎 弘
Oral presentation, Japanese, 応用物理学会
Sep. 2005

ナノポーラスシリカLow-k膜の低温熱処理と膜機械強度
倪 威; 小野 洋; 内田和男; 野崎真次; 森崎 弘
Oral presentation, Japanese, 応用物理学会
Sep. 2005

階段状ドーピングプロファイルによるバラクターダイオードの高性能化
中島誠幸; 内田和男; 野崎眞次; 森崎 弘
Oral presentation, Japanese, 電子情報通信学会2005年総合大会エレクトロニクスソサイエティ
Mar. 2005

Pdナノクリスタル含有SiO2の大気中及び低真空中SPM観察
平川長規; 野崎眞次; 小野 洋; 内田和男; 森崎 弘
Oral presentation, Japanese, 第52回応用物理学関係連合講演会
Mar. 2005

Self-limiting photo-assisted synthesis of silicon nanocrystals
C. Y. Chen; S. Kimura; S. Sen; S. Nozaki; H. Ono; K. Uchida; H. Morisaki
Oral presentation, English, 東京農工大学・電気通信大学21世紀COEプログラム合同シンポジウム予稿集「ナノ未来材料とコヒーレント光科学」
Dec. 2004

Self-limiting photo-assited synthesis of silicon nanocrystals
C. Y. Chen; S. Kimura; S .Sen; S. Nozaki; H. Ono; K. Uchida; H. Morisaki
Oral presentation, English, Materias Research Society Fall Meeting
Dec. 2004

金属酸化物透明電極を用いた白色LEDの高機能化に関する研究
伊藤 純; 内田 和男; 野崎 眞次; 森崎 弘; 長岡 亜季則; 内藤 寛人
Oral presentation, Japanese, 日本光学会年次学術講演会
Nov. 2004

ITO薄膜における深さ方向の構造についての光学的研究
長岡 亜季則; 野崎 眞次; 内田 和男; 森崎 弘; 伊藤 純; 内藤 寛人
Oral presentation, Japanese, 薄膜材料デバイス研究会、アブストラクト集
Nov. 2004

超高真空走査型トンネル顕微鏡によるInGaP/GaAs超格子断面の観察
郡司 貢; 平川 長規; 千葉 綾子; 小野 洋; 内田 和男; 野崎 眞次; 森崎 弘
Oral presentation, Japanese, 日本結晶学会年会、講演要旨集
Nov. 2004

ナノ構造分散系としての金属ドープガラス薄膜の電気伝導とデバイス応用（共著）
椛木 弘美; 一戸 隆久; 野崎 眞次; 森崎 弘; 正木 進
Oral presentation, Japanese, 薄膜材料デバイス研究会アブストラクト集
Nov. 2004

CBrCL3をドーパント源としたp-InGaAsのMOVPE成長
加部正吾; 触澤宣晶; 小野洋; 内田和男; 野崎真次; 森崎弘
Oral presentation, Japanese, 第６５回応用物理学会学術講演会講演予稿集
Sep. 2004

紫外線照射による高品位SiOx膜の作成
越川智朗; 木村誠二; 小野洋; 内田和男; 野崎真次; 森崎弘
Oral presentation, Japanese, 第６５回応用物理学会学術講演会講演予稿集
Sep. 2004

Ge超微粒子フローティングゲートMOSキャパシタの作製と電気的特性
杉本武; 寺田力; Somaditya Sen; 小野洋; 内田和男; 野崎真次; 森崎弘
Oral presentation, Japanese, 第６５回応用物理学会学術講演会講演予講集
Sep. 2004

超音速ジェットノズルによるシリコン超微粒子浮遊ゲートMOSキャパシターの作製
野村政人; 野崎真次; 小野 洋; 内田和男; 森崎 弘
Oral presentation, Japanese, 応用物理学会分科会シリコンテクノロジーNo.46「量子サイズシリコン系素子－新機能と応用―」特集号
Nov. 2002

ダブルヘテロGaAs/GaInP HBTのDC特性変化
降矢美保; 高橋一真; 浜 俊彦; 小野 洋; 内田和男; 野崎真次; 森崎 弘; 本城和彦
Oral presentation, Japanese, 第63回応用物理学会学術講演会予稿集、新潟大学五十嵐キャンパス
Sep. 2002

超高真空断面走査型トンネル顕微鏡によるGaInP/GaAsヘテロ界面原子像の観察
茶圓 聡; 郡司 貢; 小野 洋; 内田和男; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第63回応用物理学会学術講演会予稿集、新潟大学五十嵐キャンパス
Sep. 2002

Si超微粒子熱酸化によるナノポーラスシリカ膜の作製(共著)
安富大祐; 木原尚志; 小野 洋; 内田和男; 野崎真次; 森崎 弘; 吉丸正樹
Others, Japanese, 電気通信大学共同研究センター第7回共同研究成果発表会
May 2002

アンジュレーター放射光によるMOVPEのin situ評価(IV)-GaInP/GaAs成長のリアルタイム制御-
S.Bhunia; 川村朋晃; 藤川誠司; 渡辺義夫; 内田和男; 杉山智之; 降矢美保; 野崎眞次; 森崎弘; 松井純爾; 篭島靖; 津坂佳幸
Oral presentation, Japanese, 第49回応用物理学関係連合講演会、29p-ZQ-7,2002年3月29日、東海大学湘南キャンパス。
Mar. 2002

"固相Siナノクラスターによる半導体メモリー"（共著）
野崎真次; 佐倉 竜太; Puspashree Mishra; 内田和男; 森崎 弘
Invited oral presentation, Japanese, ナノ・インテリジェント材料シンポジウム、未踏科学技術協会・インテリジェント材料フォーラム主催、平成１３年１１月１３日、東京青学会館 （招待講演）
Nov. 2001

SiO_2_超微粒子薄膜のLow-k応用
木原尚志; 安富大祐; 内田和男; 小野 洋; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第60回半導体・集積回路技術シンポジウム，電気化学会電子材料委員会主催，平成13年6月6-7日，大阪国際交流センター
Jun. 2001

超高真空断面走査形トンネル顕微鏡による半導体へテロ界面GaInP/GaAsの観察
三保基陽; 茶圓 聡; 小野 洋; 内田和男; 野崎眞次; 森崎 弘
Oral presentation, Japanese, 第48回応用物理学関係連合講演会，30a-ZX-8，2001年3月30日，明治大学
Mar. 2001

銅フタロシアニン／シリコンヘテロ接合ダイオードの特性
小野 洋; 岩本卓三; 内田和男; 野崎眞次; 伊藤進夫; 森崎 弘
Oral presentation, Japanese, 第48回応用物理学関係連合講演会，29a-ZG-11，2001年3月29日，明治大学
Mar. 2001

MOVPE成長GaInP材料物性とGaInP/GaAs HBT DC特性に関する報告
池上隆幸; 杉山智之; 降矢美保; 小野 洋; 内田和男; 野崎眞次; 森崎 弘
Oral presentation, Japanese, 第48回応用物理学関係連合講演会，28p-YC-9，2001年3月28日，明治大学
Mar. 2001

水素終端したSi（111）2x1劈開面のSTSによる評価
西方 誠; 三保基陽; NS. McAlpine; 小野 洋; 内田和男; 野崎眞次; 森崎 弘
Oral presentation, Japanese, 第47回応用物理学関係連合講演会，青山学院大学，30p-YH-10，2000年3月30日
Mar. 2000

全反射X線を用いたSiO2多孔質膜の誘電率測定
木原尚志; 舟崎秀夫; 伊藤進夫; S. Banerjee; 小野 洋; 内田和男; 野崎眞次; 森崎 弘
Oral presentation, Japanese, 第47回応用物理学関係連合講演会，青山学院大学，29p-YA-7，2000年3月29日
Mar. 2000

新低誘電材料としての酸化Si超微粒子膜の作製と評価
舟崎秀夫; 小野 洋; 内田和男; 野崎眞次; 森崎 弘
Oral presentation, Japanese, 第47回応用物理学関係連合講演会，青山学院大学，29p-YA-7，2000年3月29日
Mar. 2000

低誘電絶縁材料としてのSi酸化物超微粒子の作製と評価（1）
道又重臣; 小澤宏之; 舟崎秀夫; 佐藤井一; 小野 洋; 内田和男; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第46回応用物理学関係連合講演会講演予稿集，30pZQ9/II，1999.3.30
Mar. 1999

トリメチルアミンを用いた高周波プラズマCVD法によるGaNの作製
島袋淳一; 池上隆幸; 内田和男; 野崎真次; 森崎 弘
Oral presentation, Japanese, 第46回応用物理学関係連合講演会講演予稿集，28pX1/III，1999.3.28
Mar. 1999

固体クラスターの粒子サイズ効果による電子・光機能
野崎真次; 内田和男; 小野 洋; 森崎 弘
Oral presentation, Japanese, ナノスペースラボ・シンポジウム '99
Jan. 1999

A study of band alignment in GaAs/GaInP（Partially ordered）heterostructureswith high pressure
K. Uchida; P. Yu; J. Zeman; S. Kwon; K. Teo; Z. Su; G. Martinez; T. Arai; K. Matsumoto
Invited oral presentation, English, Mat. Res. Soc. Symp, High-Pressure Materials Reseach., Proc. of Mat. Res. Soc. Symp, High-Pressure Materials Reseach. ed. by R.Wentzcovitch, R. Hemley, W. Nellis and P. Yu, Boston, Dec. 1997，499, Boston, US, International conference
Dec. 1997

Innovative Comprehensive Communications Design 1
The University of Electro-Communications

イノベイティブ総合コミュニケーションデザイン1
電気通信大学

Mechanics
The University of Electro-Communications

力学
電気通信大学

Fundamental Electronics
The University of Electro-Communications

基礎電子工学
電気通信大学

基礎科学実験A
The University of Electro-Communications

基礎科学実験A
電気通信大学

固体照明工学特論
The University of Electro-Communications

大学院技術英語
The University of Electro-Communications

応用数学
The University of Electro-Communications

半導体工学（その他コース）
The University of Electro-Communications

半導体工学（電子コース）
The University of Electro-Communications

半導体工学（その他コース）
The University of Electro-Communications

半導体工学（その他コース）
電気通信大学

半導体工学（電子コース）
The University of Electro-Communications

半導体工学（電子コース）
電気通信大学

固体照明工学特論
The University of Electro-Communications

固体照明工学特論
電気通信大学

大学院技術英語
The University of Electro-Communications

大学院技術英語
電気通信大学

応用数学
The University of Electro-Communications

応用数学
電気通信大学

応用物理学会

米国物理学会

米国材料研究学会

Fabrication of Nanocrystal Memories by Position Controlled Deposition of Ge Nanocrystals
NOZAKI Shinji; UCHIDA Kazuo
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research, The University of Electro-Ccmmunications, Grant-in-Aid for Scientific Research (B), In this research project, we made an attempt to make a nanocrystal memory using a silicon substrate on which Ge nanocrystalls are deposited with a good control of the positioning and size. Dr. Berbezier at CRMC2, Marseille, France provided the Si substrates with Ge nanocrystals deposited by MBE, and we made MOS capacitors by embedding Ge nanocrsytals in SiO_2. The most important but difficult part of the project is to deposit Ge nanocrstals with a good control of positioning and size. Dr. Berbezier and her group members developed a technique to grow the Ge nanocrstals on the FIB-patterned Si substrates. In this technique, the Ga is implanted in the Si substrates by focused ion beam (FIB) and farms the defective area locally. It was found the Ge selectively grew on the damaged area in the MBE growth of Ge. Using this selective epitaxy of Ge, Ge nanocrystals can be arranged. With the optimized growth condition, Dr. Berbezier successfully achieved an array of Ge nanocrystals on Si. However, the array was not one monolayer, and some Ge nanocrystals were stacked. Such a sample did not show a significant flatband voltage shift by injecting electrons in Ge nanocrystals. Nozaki and his group proposed a technique to form a high-density of Ge nanocrystals in a monolayer. In this technique, the Ge nanocrystals were deposited on the tunnel oxide by the gas evaporation with a supersonic jet nozzle. Using this deposition method, the Ge nanocrystals with a good uniformity in the size were obtained. They are, however, stacked. The Ge nanocrystals were annealed to remove the extra naocrystals on the monolayer. Because of strength of bonding between Ge nanocrystals and SiO_2, one monolayer of Ge nanocrystals remained without losing any nanocrystals on SiO_2 after complete removal of the extra nanocrystals. Then, the Ge nanocrystals were exposed to UV light for photo-oxidation, which electrically isolates the Ge nanocrystals by oxidizing the Ge nanocrystals. After depositing the control oxide on the Ge nanocrystals, the MOS capacitors with the Ge nanocrystals as a floating gate were fabricated. The C-V showed the hysteresis to confirm the electron injection in the nanocrystals. Although the gate electrode with the Ge nanocrystals proved to be useful in the nanocrystal memories, the further improvement of charge retention is required for practical application., 14350183
2002 - 2004

Collaboration of Education/Research on Nano-Structgured Semiconductor Devices
MORISAKI Hiroshi; ONO Hiroshi; NOZAKI Shinji; UCHIDA Kazuo
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research, The University of Electro-Communications, Grant-in-Aid for Scientific Research (B), The aim of the research program is to develop international collaboration of education and research on nano-structured semiconductor materials and devices between Griffith University Group (GUG headed by Professor Barry Harrison) and our group (UECG). We have invited twice Mr. J.Combes, a post-graduate student of GUG as an : exchange student, who has made excellent contribution to the progress of the research on the semiconductor position sensitive detector. As a research interchange between GUG and UECG, several academic staffs from both. Universities have visited each other to develop nana-structured semiconductor devices using various semiconductor process facilities in both Universities. We have developed the position sensitive devices using a current-dividing resistor composed of granular metal as well as many GalnP/GaAs photo-detectors. We: have also investigated the phase transformation induced by nano-structuring of semiconductors.' In addition to the discovery of the new phase of nano-structured Ge, we have also found that nano-structured Si can transform to the Wurzite structure, a high-pressure form of crystalline Si. The stability of the high-pressure forms of crystalline Ge have been studied by applying hydrostatic pressure as high as 10GPa. The cluster-size in nano-structured Ge films deposited by the cluster-beam evaporation technique becomes very uniform by the photo-oxidation. We have found that the photo-oxidized Ge films can show the coulomb blockade effect even at the room temperature. The possible single electron devices using this phenomenon has been discussed in both UECG and GUG., 11695042
1999 - 2001

NANO-POROUS SiOx THIN FILMS FOR APPLICATION OF LOW DIELECTRIC MATERIALS
UCHIDA Kazuo; ONO Hiroshi
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research, The University of Electro-Communications, Grant-in-Aid for Scientific Research (C), We have fabricated and characterized the nano-porous thin films of SiOx grown by Gasevaporation technique in oxygen atmosphere for the application of inter-dielectric in future VLSI technology. It was found that most of the samples had the dielectric constant below 2 as measured by the capacitance method and their porosity were over 90% as measured by the X-ray total reflection method. However, due to high porosity, water absorption into films, measured by FT-IR, was found to be inevitable and resulted in the increase of dielectric constant. In order to avoid this water absorption, we have proposed the HMDS (Hexamethyl disilan) method. We found that the dielectric constant of the film grown at 0.5 torr oxygen atmosphere with HMDS treatment was as low as 1.4. In comparison, we measured the dielectric constant of as-deposited sample in vacuum that was annealed at 623 K and found that it was as low as 1.3. On the other hand, we have fabricated nano-porous thin films of SiOx by post oxidation Si nano-porous grown by Gas-evaporation technique. These samples contained less absorbed water than SiOx samples grown by Gas-evaporation technique in oxygen atmosphere. Typical dielectric constant of these samples were as low as 1.4 without HMDS or high temperature annealing. These results prove that our SiOx films grown by simple Gas-evaporation technique are versatile and can be applied to future VLSI technology without modifying existing systems., 11650317
1999 - 2000