Master(Engineering), The University of Electro-Communications

博士（工学）, 電気通信大学

化合物半導体

量子ドット

量子ナノ構造

分子線エピタキシー

半導体デバイス

光物性

表面界面物性

結晶成長

Nanotechnology/Materials, Nanomaterials

Nanotechnology/Materials, Crystal engineering

Nanotechnology/Materials, Applied materials

Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering

Oct. 2024 - Present
The University of Electro-Communications, Quantum Future Creative Device Development Center, Associate Professor, Japan

May 2022 - Oct. 2024
Kyoto University, Nanotechnology Hub, Center for the Promotion of Interdisciplinary Education and Research, 特定研究員, Japan

Apr. 2021 - Mar. 2022
Kobe University, Graduate School of Engineering Department of Electrical and Electronic Engineering, Assistant Professor, Japan

Oct. 2012 - Mar. 2021
Kobe University, Center for Supports to Research and Education Activities, Assistant Professor, Japan

Apr. 2010 - Sep. 2012
The University of Tokyo, Research Center for Advanced Science and Technology, 特任助教

Apr. 2007 - Mar. 2010
物質・材料研究機構 量子ドットセンター, ポスドク

Oct. 2005 - Mar. 2007
日本原子力研究開発機構 量子ビーム応用研究部門 放射光科学研究ユニット, 特定課題推進員

Apr. 2004 - Sep. 2005
日本原子力研究所 放射光科学研究センター, 特定課題推進員

Apr. 2001 - Mar. 2004
The University of Electro-Communications, 電気通信学研究科博士後期課程, 電子工学専攻

Apr. 1999 - Mar. 2001
The University of Electro-Communications, 電気通信学研究科博士前期課程, 電子工学専攻, Japan

Apr. 1995 - Mar. 1999
The University of Electro-Communications, Faculty of Electro-Communications, Department of Electronic Engineering, Japan

Nov. 2003
応用物理学会
高密度・高均一InAs量子ドットの積層成長
講演奨励賞受賞, KAIZU TOSHIYUKI
Japan society, Japan

Photo-Hall Effect Characterization and Terahertz Wave Generation with 1550 nm Excitation in InAs/GaAs Quantum Dot Superlattice Based Photoconductive Antenna
Y. Minami; A. Simmen; T. Kitada; Y. Harada; T. Kaizu; O. Kojima; T. Kita; O. Wada
Journal of Applied Physics, AIP Publishing, 137, 21, 213102-1-8, Jun. 2025, Peer-reviwed, The basic photoconductive properties of an InAs/GaAs quantum dot (QD) superlattice have been characterized to develop photoconductive antennas (PCAs) operating with a telecom wavelength excitation for practical terahertz (THz) systems. The multiple-stacked InAs/GaAs QD structure was grown by molecular beam epitaxy and photo-Hall effect measurements were performed under infrared illumination conditions using light-emitting diodes with different emission wavelengths. The results have shown that the sign reversal occurs in the Hall coefficient (RH) as the illumination wavelength changes: RH is negative at 940 nm, and positive at 1550 nm. The photocurrent at 940 nm illumination is ascribed to the electron hole pair generation in QDs, whereas the photocurrent at 1550 nm is dominated by the hole current generated through the midgap states in the structure. The hole dominant photocurrent has been interpreted by a model in which photogenerated electrons are trapped in QDs and the number of mobile electrons are reduced. High dark resistance of the present QD superlattice material provides an advantage for the application to PCA devices. THz wave generation has been demonstrated by the ultrafast 1550 nm pulse excitation of a PCA device fabricated from the QD superlattice.
Scientific journal, English

Lateral photoconductivity of InAs/GaAs quantum dots for 1.5 μm-wavelength excitation photoconductive terahertz antenna devices
Toshiyuki Kaizu; Osamu Kojima; Yasuo Minami; Takahiro Kitada; Yukihiro Harada; Takashi Kita; Osamu Wada
Lead, Japanese Journal of Applied Physics, IOP Publishing, 63, 8, 082002-1-5, 01 Aug. 2024, Peer-reviwed, We report lateral photoconductive properties of multilayer-stacked undoped InAs/GaAs quantum dots (QDs) for the application of photoconductive terahertz (THz) antenna devices that operate in a 1.5 μm-telecom-wavelength band. The excitation power-dependent photocurrent showed a high value without saturation under high excitation power for the excitation wavelength of 1460 nm. From the reflection pump-probe signal, a fast photocarrier lifetime was derived. These results, together with the low dark current characteristic, support the applicability of the multilayer-stacked undoped InAs/GaAs QDs to photoconductive THz antennas operating in a 1.5 μm-wavelength band.
Scientific journal

Yb-doped Y–Al–O thin films with a self-organized columnar structure and their anti-Stokes photoluminescence properties
Y. Nakayama; N. Nakagawa; Y. Matsuo; T. Kaizu; Y. Harada; T. Ishihara; T. Kita
AIP Advances, AIP Publishing, 12, 2, 025110-1-8, 01 Feb. 2022, Peer-reviwed
Scientific journal

Polarization-insensitive fiber-to-fiber gain of semiconductor optical amplifier using closely stacked InAs/GaAs quantum dots
Toshiyuki Kaizu; Tomoya Kakutani; Kouichi Akahane; Takashi Kita
Lead, Japanese Journal of Applied Physics, IOP Publishing, 59, 3, 032002-1-5, 17 Feb. 2020, Peer-reviwed
Scientific journal

Photoelectrochemical Reaction in an Electric Cell with a Porous Carbon Anode
Toshiyuki Kaizu; Yousuke Kawajiri; Masahito Enomoto; Takashi Uchino; Minoru Mizuhata; Yuichi Ichihashi; Keita Taniya; Satoru Nishiyama; Masakazu Sugiyama; Masami Ueno; Takashi Kita
The Journal of Physical Chemistry C, American Chemical Society (ACS), 123, 32, 19447-19452, 24 Jul. 2019
Scientific journal

Wide-wavelength-range control of photoluminescence polarization in closely stacked inas/gaas quantum dots
Toshiyuki Kaizu; Yusuke Tajiri; Takashi Kita
Lead, Journal of Applied Physics, American Institute of Physics Inc., 125, 23, 234304-1-8, 21 Jun. 2019, Peer-reviwed, True
Scientific journal, English

Adiabatic two-step photoexcitation effects in intermediate-band solar cells with quantum dot-in-well structure
S. Asahi,T. Kaizu,T. Kita
Scientific Reports, Nature Publishing Group, 9, 7859-1-8, May 2019, Peer-reviwed, We studied the dynamics of electrons generated by two-step photoexcitation in an intermediate-band solar cell (IBSC) comprising InAs/GaAs/Al0.3Ga0.7As dot-in-well (DWELL) structure using time-resolved photocurrent (TRPC) measurement. The examined IBSC exhibited considerably slower photocurrent decay than a conventional InAs/GaAs quantum dot IBSC, which is due to the extraordina
Scientific journal, English

Carrier collection efficiency of intraband-excited carriers in two-step photon up-conversion solar cells
Shigeo Asahi; Kenta Nishimura; Toshiyuki Kaizu; Takashi Kita
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, Institute of Electrical and Electronics Engineers Inc., 3447-3450, 26 Nov. 2018
International conference proceedings, English

Two-step photocurrent generation enhanced by the fundamental-state miniband formation in intermediate-band solar cells using a highly homogeneous InAs/GaAs quantum-dot superlattice
Kazuki Hirao; Shigeo Asahi; Toshiyuki Kaizu; Takashi Kita
Applied Physics Express, 11, 1, 012301-1-4, Jan. 2018, Peer-reviwed
Scientific journal, English

Spatially resolved electronic structure of an isovalent nitrogen center in GaAs
R. C. Plantenga; V. R. Kortan; T. Kaizu; Y. Harada; T. Kita; M. E. Flatte; P. M. Koenraad
Physical Review B, 96, 15, 155210-1-8, Oct. 2017, Peer-reviwed
Scientific journal, English

Efficient two-step photocarrier generation in bias-controlled InAs/GaAs quantum dot superlattice intermediate-band solar cells
T. Kada; S. Asahi; T. Kaizu; Y. Harada; R. Tamaki; Y. Okada; T. Kita
Scientific Reports, 7, 5865-1-10, Jul. 2017, Peer-reviwed
Scientific journal, English

Two-step photocurrent generation enhanced by miniband formation in InAs/GaAs quantum dot superlattice intermediate-band solar cells
Sho Watanabe; Shigeo Asahi; Tomoyuki Kada; Kazuki Hirao; Toshiyuki Kaizu; Yukihiro Harada; Takashi Kita
Applied Physics Letters, 110, 19, 193104-1-5, May 2017, Peer-reviwed
Scientific journal, English

Two-step photon up-conversion solar cells
Shigeo Asahi; Haruyuki Teranishi; Kazuki Kusaki; Toshiyuki Kaizu; Takashi Kita
Nature Communications, 8, 14962-1-9, Apr. 2017, Peer-reviwed
Scientific journal, English

Transverse-magnetic laser oscillation from highly stacked InAs/GaAs quantum dots
Toshiyuki Kaizu; Masaya Suwa; Takaya Andachi; Yukihiro Harada; Takashi Kita
Conference Digest - IEEE International Semiconductor Laser Conference, Institute of Electrical and Electronics Engineers Inc., 02 Dec. 2016
International conference proceedings, English

Photocarrier transport dynamics in InAs/GaAs quantum dot superlattice solar cells using time-of-flight spectroscopy
T. Tanibuchi; T. Kada; S. Asahi; D. Watanabe; T. Kaizu; Y. Harada; T. Kita
Physical Review B, 94, 19, 1-9, Nov. 2016, Peer-reviwed
Scientific journal, English

Polarization characteristics of electroluminescence and net modal gain in highly stacked InAs/GaAs quantum-dot laser devices
Masaya Suwa; Takaya Andachi; Toshiyuki Kaizu; Yukihiro Harada; Takashi Kita
Journal of Applied Physics, 120, 13, 1-6, Oct. 2016, Peer-reviwed
Scientific journal, English

Emission-wavelength tuning of InAs quantum dots grown on nitrogen-delta-doped GaAs(001)
Toshiyuki Kaizu; Kohei Taguchi; Takashi Kita
Lead, Journal of Applied Physics, 119, 19, 194306-1-8, May 2016, Peer-reviwed
Scientific journal, English

Saturable Two-Step Photocurrent Generation in Intermediate-Band Solar Cells Including InAs Quantum Dots Embedded in Al0.3Ga0.7As/GaAs Quantum Wells
Shigeo Asahi; Haruyuki Teranishi; Naofumi Kasamatsu; Tomoyuki Kada; Toshiyuki Kaizu; Takashi Kita
IEEE Journal of Photovoltaics, 6, 2, 465-472, Mar. 2016, Peer-reviwed
Scientific journal, English

Effects of rapid thermal annealing on two-dimensional delocalized electronic states of the epitaxial N delta-doped layer in GaAs
Yasuhiro Ogawa; Yukihiro Harada; Takeshi Baba; Toshiyuki Kaizu; Takashi Kita
Applied Physics Letters, 108, 11, 1~4, Mar. 2016, Peer-reviwed
Scientific journal, English

Polarization anisotropy of electroluminescence and net-modal gain in highly stacked InAs/GaAs quantum-dot laser devices
Toshiyuki Kaizu; Masaya Suwa; Takaya Andachi; Yukihiro Harada; Takashi Kita
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016, Peer-reviwed
International conference proceedings, English

Transverse-magnetic laser oscillation from highly stacked InAs/GaAs quantum dots
Toshiyuki Kaizu; Masaya Suwa; Takaya Andachi; Yukihiro Harada; Takashi Kita
2016 INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC), 2016, Peer-reviwed
International conference proceedings, English

Two-Dimensional Energy Dispersion in Thermally Annealed Epitaxial Nitrogen Atomic Sheet in GaAs
Yasuhiro Ogawa; Yukihiro Harada; Kaizu Toshiyuki; Takashi Kita
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016, Peer-reviwed
International conference proceedings, English

GaAs first-spacer-layer thickness dependence of polarized photoluminescence properties of closely-stacked InAs/GaAs quantum dots with long-wavelength emission
Yusuke Tajiri; Toshiyuki Kaizu; Takashi Kita
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016, Peer-reviwed
International conference proceedings, English

Broadband control of emission wavelength of InAs/GaAs quantum dots by GaAs capping temperature
Toshiyuki Kaizu; Takuya Matsumura; Takashi Kita
Lead, Journal of Applied Physics, 118, 15, 154301-1-6, Oct. 2015, Peer-reviwed
Scientific journal, English

Analyses of saturable behavior of two-step photoexcitation in InAs/GaAs/Al0.3Ga0.7As intermediate-band solar cells
Shigeo Asahi; Haruyuki Teranishi; Naofumi Kasamatsu; Tomoyuki Kada; Toshiyuki Kaizu; Takashi Kita
Zairyo/Journal of the Society of Materials Science, Japan, Society of Materials Science Japan, 64, 9, 690-695, 01 Sep. 2015, Peer-reviwed
Scientific journal, Japanese

Analysis of optical waveguide mode in closely-stacked InAs/GaAs quantum dot semiconductor optical amplifiers
Masaya Suwa; Tomoyuki Ohashi; Takaya Andachi; Toshiyuki Kaizu; Yukihiro Harada; Takashi Kita
Journal of the Society of Materials Science, Japan, Society of Materials Science Japan, 64, 9, 685-689, 01 Sep. 2015, Peer-reviwed
Scientific journal, Japanese

Two-step photon absorption in InAs/GaAs quantum-dot superlattice solar cells
T. Kada; S. Asahi; T. Kaizu; Y. Harada; T. Kita; R. Tamaki; Y. Okada; K. Miyano
Physical Review B, 91, 20, 201303-1-6, May 2015, Peer-reviwed
Scientific journal, English

Saturable Two-step Photo current Generation in Intermediate-band Solar Cells Including InAs Quantum Dots Embedded in Al0.3Ga0.7As/GaAs Quantum Wells
Shigeo Asahi; Haruyuki Teranishi; Naofumi Kasamatsu; Tomoyuki Kada; Toshiyuki Kaizu; Takashi Kita
2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2015, Peer-reviwed
International conference proceedings, English

Two-Step Photocarrier Generation in InAs/GaAs Quantum Dot Superlattice Intermediate Band Solar Cell
Tomoyuki Kada; Taizo Tanibuchi; Shigeo Asahi; Toshiyuki Kaizu; Yukihiro Harada; Takashi Kita; Ryo Tamaki; Yoshitaka Okada; Kenjiro Miyano
2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2015, Peer-reviwed
International conference proceedings, English

Suppression of thermal carrier escape and enhanced two-step photon absorption in quantum-dot intermediate-band solar cells with a high-potential barrier
S. Asahi; H. Teranishi; N. Kasamatsu; T. Kada; T. Kaizu; T. Kita
PHYSICS SIMULATION AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES IV, 9358, 2015
International conference proceedings, English

Photoluminescence Properties of InAs Quantum Dots on Nitrogen δ-Doped GaAs
KAIZU TOSHIYUKI; KITA TAKASHI
14th International Symposium on Advanced Fluid Information, 148-149, Nov. 2014
International conference proceedings, English

Suppression of exciton-spin relaxation induced by artificial lateral quantum confinement in GaAs
Takayuki Kiba; T. Tanaka; Yosuke Tamura; Cedric Thomas; Toshiyuki Kaizu; Yoshitaka Okada; Seiji Samukawa; Akihiro Murayama
18th International Conference on Molecular Beam Epitaxy, Sep. 2014, Peer-reviwed
International conference proceedings, English

Suppression of thermal carrier escape and efficient photo-carrier generation by two-step photon absorption in InAs quantum dot intermediate-band solar cells using a dot-in-well structure
S. Asahi; H. Teranishi; N. Kasamatsu; T. Kada; T. Kaizu; T. Kita
Journal of Applied Physics, 116, 6, 063510-1-5, Aug. 2014, Peer-reviwed
Scientific journal, English

Polarization-insensitive optical gain characteristics of highly stacked InAs/GaAs quantum dots
Takashi Kita; Masaya Suwa; Toshiyuki Kaizu; Yukihiro Harada
Journal of Applied Physics, 115, 23, 233512-1-5, Jun. 2014, Peer-reviwed
Scientific journal, English

Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell
T. Sogabe; T. Kaizu; Y. Okada; S. Tomić
Journal of Renewable Sustainable Energy, 6, 1, 011206-1-11, Jan. 2014, Peer-reviwed
Scientific journal, English

Fabrication of InAs Qantum Dots on Nitrided GaAs (001) Surface
KAIZU TOSHIYUKI; KITA TAKASHI
13th International Symposium on Advanced Fluid Information, 102-103, Nov. 2013
International conference proceedings, English

Quantum size effects in GaAs nanodisks fabricated using a combination of the bio-template technique and neutral beam etching
Yosuke Tamura; Toshiyuki Kaizu; Takayuki Kiba; Makoto Igarashi; Rikako Tsukamoto; Akio Higo; Weiguo Hu; Cedric Thomas; Mohd Erman Fauzi; Takuya Hoshii; Ichiro Yamashita; Yoshitaka Okada; Akihiro Murayama; Seiji Samukawa
Nanotechnology, 24, 28, 285301-1-6, 19 Jul. 2013, Peer-reviwed
Scientific journal, English

Application of photoreflectance to advanced multilayer structures for photovoltaics
D. F. Marron; E. Canovas; I. Artacho; C. R. Stanley; M. Steer; KAIZU TOSHIYUKI; Y. Shoji; N. Ahsan; Y. Okada; E. Barrigon; I. Rey-Stolle; C. Algora; A. Marti; A. Luque
Materials Science and Engineering B, 178, 9, 599-608, May 2013, Peer-reviwed
Scientific journal, English

Photoluminescence from GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth
Toshiyuki Kaizu; Yosuke Tamura; Makoto Igarashi; Weiguo Hu; Rikako Tsukamoto; Ichiro Yamashita; Seiji Samukawa; Yoshitaka Okada
Lead, Applied Physics Letters, 101, 11, 113108-1-4, Sep. 2012, Peer-reviwed
Scientific journal, English

High-density and Sub-20-nm GaAs Nanodisk Array Fabricated Using Neutral Beam Etching Process for High Performance QDs Devices
Yosuke Tamura; Makoto Igarashi; Mohd Erman Fauzi; Rikako Tsukamoto; Toshiyuki Kaizu; Takayuki Kiba; Ichiro Yamashita; Yoshitaka Okada; Akihiro Murayama; Seiji Samukawa
2012 12TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2012
International conference proceedings, English

Optical absorption, photo-luminescence and miniband formation of a highly ordered and dense 2-dimensional array of Si nanodisks for quantum dot solar cells
Makoto Igarashi; Chi-Hsien Huang; Xuan-Yu Wang; Mohd Fairuz Budiman; Yosuke Tamura; Takayuki Kiba; Akihiro Murayama; Toshiyuki Kaizu; Yoshitaka Okada; Seiji Samukawa
Conference Record of the IEEE Photovoltaic Specialists Conference, 003511-003515, 2011
International conference proceedings, English

Damage-free top-down processes for fabricating two-dimensional array of sub-10-nanometer GaAs nanodiscs using bio-template and neutral beam etching for intermediate band solar cell applications
Mohd Fairuz Budiman; Xuan-Yu Wang; Chi-Hsien Huang; Rikako Tsukamoto; Toshiyuki Kaizu; Makoto Igarashi; Pierre-Andre Mortemousque; Yoshitaka Okada; Akihiro Murayama; Kohei M. Itoh; Yuzo Ohno; Seiji Samukawa
Conference Record of the IEEE Photovoltaic Specialists Conference, 002675-002678, 2011
International conference proceedings, English

Magnetotransport properties of Yb-doped AlxGa1-xAs/GaAs two-dimensional electron systems
Toshiyuki Kaizu; Yasutaka Imanaka; Kanji Takehana; Tadashi Takamasu
Lead, Physica E: Low-dimensional Systems and Nanostructures, 42, 4, 1126-1129, Feb. 2010, Peer-reviwed
Scientific journal, English

Time-Resolved X-ray Diffraction Measurements of High-Density InAs Quantum Dots on Sb/GaAs Layers and the Suppression of Coalescence by Sb-Irradiated Growth Interruption
Naoki Kakuda; Toshiyuki Kaizu; Masamitu Takahasi; Seiji Fujikawa; Koichi Yamaguchi
Japanese Journal of Applied Physics, 49, 9, 095602-1-4, 2010, Peer-reviwed
Scientific journal, English

In situ X-ray diffraction during stacking of InAs/GaAs(001) quantum dot layers and photoluminescence spectroscopy
M. Takahasi; T. Kaizu
Journal of Crystal Growth, 311, 7, 1761-1763, Mar. 2009, Peer-reviwed
Scientific journal, English

GaSb(001) Surface Reconstructions Measured at the Growth Front by Surface X-ray Diffraction
B. P. Tinkham; O. Romanyuk; W. Braun; K. H. Ploog; F. Grosse; M. Takahasi; T. Kaizu; J. Mizuki
Journal of Electronic Materials, 37, 12, 1793-1798, Dec. 2008, Peer-reviwed
Scientific journal, English

In situ determination of Sb distribution in Sb/GaAs(001) layer for high-density InAs quantum dot growth
Toshiyuki Kaizu; Masamitu Takahasi; Koichi Yamaguchi; Jun'ichiro Mizuki
Lead, Journal of Crystal Growth, 310, 15, 3436-3439, Jul. 2008, Peer-reviwed
Scientific journal, English

Modification of InAs quantum dot structure during annealing
Toshiyuki Kaizu; Masamitu Takahasi; Koichi Yamaguchi; Jun'ichiro Mizuki
Lead, Journal of Crystal Growth, 301-302, 248-251, Apr. 2007, Peer-reviwed
Scientific journal, English

In-situ X-ray diffraction study of InAs/GaAs(001) quantum dot growth
Masamitu Takahasi; Toshiyuki Kaizu; Jun'ichiro Mizuki
Transactions of the Materials Research Society of Japan, The Materials Research Society of Japan, 32, 1, 209-214, 2007, Peer-reviwed
Scientific journal

Study of InAs/GaAs(001) nanoisland growth process by in-situ and real-time X-ray diffraction
Masamitu Takahasi; Toshiyuki Kaizu; Jun'ichiro Mizuki
e-Journal of Surface Science and Nanotechnology, 4, 426-430, 22 Apr. 2006, Peer-reviwed
Scientific journal, English

In situ monitoring of internal strain and height of InAs nanoislands grown on GaAs(001)
M Takahasi; T Kaizu; J Mizuki
Applied Physics Letters, 88, 10, 101917-1-3, Mar. 2006, Peer-reviwed
Scientific journal, English

Controlled stacking growth of uniform InAs quantum dots by molecular beam epitaxy
Y Suzuki; T Kaizu; K Yamaguchi
Physica E: Low-dimensional Systems and Nanostructures, 21, 2-4, 555-559, Mar. 2004, Peer-reviwed
Scientific journal, English

Self-Formation of Uniform InAs Quantum Dots and Quantum-Dot Chains
K.Yamaguchi; T.Kaizu; T.Kanto; Y.Suzuki
Transactions of the Materials Research Society of Japan, 29, 1, 117-121, Jan. 2004, Peer-reviwed

Facet formation of uniform InAs quantum dots by molecular beam epitaxy
T Kaizu; K Yamaguchi
Lead, Japanese Journal of Applied Physics, 42, 6S, 4166-4168, Jun. 2003, Peer-reviwed
Scientific journal, English

Uniform formation of two-dimensional and three-dimensional InAs islands on GaAs by molecular beam epitaxy
T Kaizu; K Yamaguchi
Lead, Japanese Journal of Applied Physics, 42, 4R, 1705-1708, Apr. 2003, Peer-reviwed
Scientific journal, English

Uniform formation process of self-organized InAs quantum dots
K Yamaguchi; T Kaizu; K Yujobo; Y Saito
Journal of Crystal Growth, 237-239, Part2, 1301-1306, Apr. 2002, Peer-reviwed
Scientific journal, English

Self size-limiting process of InAs quantum dots grown by molecular beam epitaxy
T Kaizu; K Yamaguchi
Lead, Japanese Journal of Applied Physics, 40, 3S, 1885-1887, Mar. 2001, Peer-reviwed
Scientific journal, English

Stranski-Krastanov growth of InAs quantum dots with narrow size distribution
K Yamaguchi; K Yujobo; T Kaizu
Japanese Journal of Applied Physics, 39, 12A, L1245-L1248, Dec. 2000, Peer-reviwed
Scientific journal, English

バイオテンプレート極限加工による直径制御GaAsナノディスクの作製とその発光特性
田村洋典; 五十嵐誠; THOMAS C; FAUZI M. Erman; HU W; 肥後昭男; 塚本里加子; 海津利行; 星井拓也; 木場隆之; 山下一郎; 岡田至崇; 村山明宏; 寒川誠二
11 Mar. 2013, 応用物理学会春季学術講演会講演予稿集(CD-ROM), 60th, ROMBUNNO.30A-G20-7, Japanese, 201302202457316263

トップダウン加工GaAsナノディスクにおけるキャリアスピン緩和
木場隆之; 木場隆之; 須崎健太; 田村洋典; 田村洋典; 五十嵐誠; 五十嵐誠; THOMAS C.; THOMAS C.; HU W.; HU W.; 海津利行; 海津利行; 岡田至崇; 岡田至崇; 寒川誠二; 寒川誠二; 寒川誠二; 村山明宏; 村山明宏
2013, 応用物理学会春季学術講演会講演予稿集(CD-ROM), 60th, 201302296780962772

単層InAs/GaAs量子ドット構造のDLTS評価
中野廣一; 中野廣一; 海津利行; 星井拓也; 星井拓也; 岡田至崇; 岡田至崇
27 Aug. 2012, 応用物理学会学術講演会講演予稿集(CD-ROM), 73rd, ROMBUNNO.11P-J-14, Japanese, 201202216192999626

原子状水素援用MBEによる2次元GaAsナノディスクアレイのGaAs/AlGaAsキャップ層再成長
海津利行; 海津利行; 田村洋典; 田村洋典; 五十嵐誠; 五十嵐誠; HU W; HU W; 寒川誠二; 寒川誠二; 寒川誠二; 岡田至崇; 岡田至崇
27 Aug. 2012, 応用物理学会学術講演会講演予稿集(CD-ROM), 73rd, ROMBUNNO.11P-J-13, Japanese, 201202226299693290

バイオテンプレート極限加工によるGaAsナノディスクの作製と発光特性
田村洋典; 田村洋典; 五十嵐誠; 五十嵐誠; THOMAS C; THOMAS C; FAUZI M. Erman; FAUZI M. Erman; HU W; HU W; 塚本里加子; 塚本里加子; 海津利行; 海津利行; 星井拓也; 星井拓也; 木場隆之; 木場隆之; 山下一郎; 山下一郎; 岡田至崇; 岡田至崇; 村山明宏; 村山明宏; 寒川誠二; 寒川誠二; 寒川誠二
27 Aug. 2012, 応用物理学会学術講演会講演予稿集(CD-ROM), 73rd, ROMBUNNO.11A-F1-6, Japanese, 201202200797118946

2次元Siナノディスクアレイにおけるミニバンド形成と電気伝導性の向上
FAUZI Mohd Erman; FAUZI Mohd Erman; 五十嵐誠; 五十嵐誠; HU Weiguo; HU Weiguo; 海津利行; 海津利行; 岡田至崇; 岡田至崇; 寒川誠二; 寒川誠二; 寒川誠二
27 Aug. 2012, 応用物理学会学術講演会講演予稿集(CD-ROM), 73rd, ROMBUNNO.11A-F1-1, Japanese, 201202245729517798

障壁材料としてSiCを用いたSi量子ナノディスクアレイ構造の電気・光学特性
五十嵐誠; 五十嵐誠; 海津利行; 海津利行; 岡田至崇; 岡田至崇; 木場隆之; 木場隆之; 村山明宏; 村山明宏; 寒川誠二; 寒川誠二
16 Aug. 2011, 応用物理学会学術講演会講演予稿集(CD-ROM), 72nd, ROMBUNNO.1A-K-5, Japanese, 201102240790914512

高密度InAs量子ドットのSb照射成長中断における時間分解X線回折測定(3)
山本和輝; 角田直輝; 海津利行; 海津利行; 高橋正光; 藤川誠司; 山口浩一
30 Aug. 2010, 応用物理学会学術講演会講演予稿集(CD-ROM), 71st, ROMBUNNO.14A-ZQ-11, Japanese, 201002227006765642

シリコン(Si)ナノディスク2次元アレイによる高効率光吸収とバンドギャップエネルギー制御の実現
BIN BUDIMAN Mohd Fairuz; HUANG Chi‐Hsien; HUANG Chi‐Hsien; WANG Uan‐Yu; WANG Uan‐Yu; 海津利行; 海津利行; 五十嵐誠; 五十嵐誠; 大島隆治; 大島隆治; 岡田至崇; 岡田至崇; 山下一郎; 山下一郎; 寒川誠二; 寒川誠二
30 Aug. 2010, 応用物理学会学術講演会講演予稿集(CD-ROM), 71st, ROMBUNNO.14P-NC-8, Japanese, 201002257175971754

高密度InAs量子ドットのSb照射成長中断における時間分解X線回折測定(2)
角田直輝; 海津利行; 高橋正光; 藤川誠司; 山口浩一
08 Sep. 2009, 応用物理学会学術講演会講演予稿集, 70th, 1, 398, Japanese, 200902238104180998

Ybドープ2次元電子系におけるYbトラップ準位の考察
海津利行; 高増正; 竹端寛治; 今中康貴
The Physical Society of Japan (JPS), 18 Aug. 2009, 日本物理学会講演概要集, 64, 2, 591-591, Japanese, 1342-8349, 200902228368832122, 110007498159, AA11439205

高密度InAs量子ドットのSb照射成長中断における時間分解X線回折測定
角田直輝; 海津利行; 高橋正光; 藤川誠司; 山口浩一
30 Mar. 2009, 応用物理学関係連合講演会講演予稿集, 56th, 1, 450, Japanese, 200902259682874983

YbドープAlGaAs/GaAs2次元電子系の電気伝導特性の励起エネルギー依存性
海津利行; 高増正; 竹端寛治; 今中康貴
The Physical Society of Japan (JPS), 03 Mar. 2009, 日本物理学会講演概要集, 64, 1, 687-687, Japanese, 1342-8349, 200902229140539740, 110007372289, AA11439205

YbドープAlGaAs/GaAsヘテロ構造の電気伝導特性の磁場依存性
海津利行; 高増正; 竹端寛治; 今中康貴
The Physical Society of Japan (JPS), 25 Aug. 2008, 日本物理学会講演概要集, 63, 2, 587-587, Japanese, 1342-8349, 200902212701651501, 110006984672, AA11439205

Ybドープ2次元電子系の強磁場電気伝導特性
高増正; 海津利行; 今中康貴; 竹端寛治
The Physical Society of Japan (JPS), 29 Feb. 2008, 日本物理学会講演概要集, 63, 1, 682-682, Japanese, 1342-8349, 200902211867472900, 110007195080, AA11439205

In-situ X-ray diffraction study on structural evolution of InAs islands on GaAs(001) during annealing
Masamitu Takahasi; Toshiyuki Kaizu; Jun'ichiro Mizuki
01 Dec. 2007, AIP Conference Proceedings, 893, 75-76, 0094-243X, 77958515348

YbドープGaAs/AlGaAsヘテロ構造の発光,輸送特性
高増正; 海津利行; 今中康貴; 竹端寛治
The Physical Society of Japan (JPS), 21 Aug. 2007, 日本物理学会講演概要集, 62, 2, 682-682, Japanese, 1342-8349, 200902219051471729, 110007142780, AA11439205

分子線エピタキシャル法による半導体ナノ構造成長のその場X線回折
高橋正光; 海津利行; 水木純一郎
27 Mar. 2007, 応用物理学関係連合講演会講演予稿集, 54th, 0, 109, Japanese, 200902264153217199

Sb照射GaAs(001)表面のその場X線回折測定
海津利行; 高橋正光; 菅藤徹; 築地伸和; 外村慎一; 山口浩一; 水木純一郎
27 Mar. 2007, 応用物理学関係連合講演会講演予稿集, 54th, 1, 448, Japanese, 200902283227089745

リアルタイム計測:半導体ナノドット成長過程における構造変化
高橋正光; 海津利行
29 Aug. 2006, 応用物理学会学術講演会講演予稿集, 67th, 0, 10, Japanese, 200902287441777115

InAs/GaAs(001)成長のリアルタイムX線回折測定
高橋正光; 海津利行; 水木純一郎
22 Mar. 2006, 応用物理学関係連合講演会講演予稿集, 53rd, 1, 323, Japanese, 200902209194865919

その場X線回折による成長中継中のInAs量子ドットの構造変化の解析
海津利行; 高橋正光; 佐藤峻之; 堀田正憲; 山口浩一; 水木純一郎
29 Mar. 2005, 応用物理学関係連合講演会講演予稿集, 52nd, 1, 348, Japanese, 200902232994993216

InAs/GaAs(001)量子ドット成長のリアルタイムX線測定
高橋正光; 海津利行
29 Mar. 2005, 応用物理学関係連合講演会講演予稿集, 52nd, 0, 109, Japanese, 200902239386436015

自己制限InAs量子ドットの構造安定性
岩崎誠樹; 海津利行; 山口浩一
28 Mar. 2004, 応用物理学関係連合講演会講演予稿集, 51st, 1, 357, Japanese, 200902224047187998

高密度・高均一InAs量子ドットの積層成長
海津利行; 山口浩一
30 Aug. 2003, 応用物理学会学術講演会講演予稿集, 64th, 1, 268, Japanese, 200902297846357941

GaAs埋め込みInAs量子ドットの1.3μm発光
海津利行; 武田宙; 山口浩一
30 Aug. 2003, 応用物理学会学術講演会講演予稿集, 64th, 3, 1269, Japanese, 200902219115129850

自己制限InAs量子ドット形成過程のInAs成長条件依存性 (2)
海津利行; 山口浩一
27 Mar. 2003, 応用物理学関係連合講演会講演予稿集, 50th, 3, 1460, Japanese, 200902262766094690

自己制限InAs量子ドット形成過程のInAs成長条件依存性
海津利行; 山口浩一
24 Sep. 2002, 応用物理学会学術講演会講演予稿集, 63rd, 1, 281, Japanese, 200902147688912507

InAs量子ドットのサイズ自己制限過程
海津利行; 山口浩一
27 Mar. 2002, 応用物理学関係連合講演会講演予稿集, 49th, 1, 336, Japanese, 200902151761920847

InAs2次元成長層のアニールによる3次元ドット形成
岩崎誠樹; 海津利行; 山口浩一
27 Mar. 2002, 応用物理学関係連合講演会講演予稿集, 49th, 1, 335, Japanese, 200902107441845481

InAsアイランドサイズの形成位置依存性
海津利行; 山口浩一
11 Sep. 2001, 応用物理学会学術講演会講演予稿集, 62nd, 1, 230, Japanese, 201202105086897494

自己組織化InAsドットの初期形成過程
市原純; 海津利行; 山口浩一
28 Mar. 2001, 応用物理学関係連合講演会講演予稿集, 48th, 3, 1345, Japanese, 201202191468317386

自己制限InAs量子ドットのファセット形成過程
海津利行; 山口浩一
28 Mar. 2001, 応用物理学関係連合講演会講演予稿集, 48th, 3, 1345, Japanese, 201202155098573217

Narrow Size Distribution of Facet-Formed InAs Quantum Dots
2001, Proceedings of the 6th International Symposium on Advanced Physical Fields 2001, 330-334

自己組織化InAs量子ドットの低成長速度形成
祐乗坊邦彦; 海津利行; 山口浩一
03 Sep. 2000, 応用物理学会学術講演会講演予稿集, 61st, 1, 252, Japanese, 201202184180522159

自己制限InAs量子ドットの形成過程
海津利行; 山口浩一
03 Sep. 2000, 応用物理学会学術講演会講演予稿集, 61st, 3, 1150, Japanese, 201202164240085470

High uniform growth of self-organized InAs quantum dots - Self-limiting effect of dot size.
YAMAGUCHI KOICHI; KAIZU TOSHIYUKI; YUJOBOU KUNIHIKO
In Stranski-Krastanov (SK) mode growth of the InAs, a self-limiting effect of quantum dot (QD) size was observed. As a result, size fluctuation was effectively suppressed, and, a narrow photoluminescence (PL) line width of 21.3 meV was achieved. The self-limiting behavior of pyramidal InAs dots was mainly attributed by the formation of the stable facet. The temperature dependence of PL intensity indicated thermal emission and incorporation of electrons between QDs with different size. Low arsenic pressure during the InAs growth allowed large self-limiting size of coherent dots and low density of coalescent dots., The Institute of Electronics, Information and Communication Engineers, 21 Jun. 2000, 電子情報通信学会技術研究報告, 100, 115(LQE2000 14-25), 13-20, Japanese, 0913-5685, 200902126606698149, 110003308075, AN10442705

自己組織化InAs量子ドットの低As圧成長
祐乗坊邦彦; 海津利行; 山口浩一
28 Mar. 2000, 応用物理学関係連合講演会講演予稿集, 47th, 1, 324, Japanese, 201202151984262880

自己組織化InAs量子ドットサイズの自己制限効果(2)
海津利行; 祐乗坊邦彦; 山口浩一
28 Mar. 2000, 応用物理学関係連合講演会講演予稿集, 47th, 1, 486, Japanese, 201202197495067446

自己組織化InAs量子ドットサイズの自己制限効果
海津利行; 山口浩一
01 Sep. 1999, 応用物理学会学術講演会講演予稿集, 60th, 1, 393, Japanese, 200902122007669224

高均一InAs自己形成量子ドットの発光特性
海津利行; 寺沢博雅; 山口浩一
28 Mar. 1999, 応用物理学関係連合講演会講演予稿集, 46th, 1, 540, Japanese, 200902111138872155

半導体光共振器中での電気光学効果を利用したテラヘルツ電界センサ： 位相差信号の共振器Q値依存性
原田幸弘; 北田貴弘; 海津利行; 南康夫; 小島磨; 喜多隆; 和田修
Oral presentation, Japanese, 第72回応用物理学会春季学術講演会, Domestic conference
17 Mar. 2025
14 Mar. 2025- 17 Mar. 2025

半導体光共振器中での電気光学効果を利用したテラヘルツ電界センサ：結晶面方位の検討
北田貴弘; 原田幸弘; 海津利行; 南康夫; 小島磨; 喜多隆; 和田修
Oral presentation, Japanese, 第72回応用物理学会春季学術講演会, Domestic conference
17 Mar. 2025
14 Mar. 2025- 17 Mar. 2025

逆積み構造太陽電池のスマートスタックに向けたエピタキシャル薄膜の3回転写プロセス開発
切柳匠登; 宮下直也; 牧田紀久夫; 菅谷武芳; 海津利行; 山口浩一
Poster presentation, Japanese, 第72回応用物理学会春季学術講演会, Domestic conference
16 Mar. 2025
14 Mar. 2025- 17 Mar. 2025

面内超高密度量子ドットにおける強結合遷移モデル
甲斐涼雅; 海津利行; 宮下直也; 山口浩一
Poster presentation, Japanese, 第72回応用物理学会春季学術講演会, Domestic conference
16 Mar. 2025
14 Mar. 2025- 17 Mar. 2025

Si基板上のInAsナノワイヤーからの横方向成長によるInAs薄膜成長
アチャリヤ淳一; 海津利行; 宮下 直也; 山口 浩一
Oral presentation, Japanese, 第72回応用物理学会春季学術講演会, Domestic conference
16 Mar. 2025
14 Mar. 2025- 17 Mar. 2025

InAs量子ドット成長に起因する格子不整合歪みを利用した差周波混合によるテラヘルツ電磁波発生
鈴木崇斗; 小島磨; 海津利行; 和田修; 喜多隆
Oral presentation, Japanese, 第85回応用物理学会秋季学術講演会, Domestic conference
16 Sep. 2024
16 Sep. 2024- 20 Sep. 2024

多重積層InAs/ GaAs量子ドットを用いた光伝導アンテナの様々な励起光波長における光電流の励起光強度依存性
海津利行; 小島磨; 南康夫; 北田貴弘; 原田幸弘; 喜多隆; 和田修
Oral presentation, Japanese, 第85回応用物理学会秋季学術講演会, Domestic conference
16 Sep. 2024
16 Sep. 2024- 20 Sep. 2024

Lateral Photoconductivity of Multiple-Stacked InAs/GaAs Quantum Dot Structure for Photoconductive Antenna Device
T. Kaizu; I. Kohama; Y. Minami; T. Kitada; Y. Harada; O. Kojima; T. Kita; O. Wada
Oral presentation, English, Compund Semiconductor Week 2021, International conference
12 May 2021
09 May 2021- 13 May 2021

光伝導アンテナ応用へ向けた多重積層InAs/GaAs量子ドットの電気特性評価
南康夫; 新免歩; 北田 貴弘; 原田幸弘; 海津利行; 小島磨; 喜多隆; 和田修
Poster presentation, Japanese, 第68回応用物理学会春季学術講演会, Domestic conference
19 Mar. 2021
16 Mar. 2021- 19 Mar. 2021

光伝導アンテナ応用へ向けた多重積層InAs/GaAs量子ドットの光学特性評価
海津利行; 小濱一晟; 南康夫; 北田貴弘; 原田幸弘; 小島磨; 喜多隆; 和田修
Japanese, 第68回応用物理学会春季学術講演会, Domestic conference
19 Mar. 2021
16 Mar. 2021- 19 Mar. 2021

Polarization-Insensitive Optical Gain of Highly stacked InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
T. Kaizu; T. Kakutani; T. Kita
Oral presentation, English, SmiconNano2019, Kobe, Japan, International conference
25 Sep. 2019
24 Sep. 2019- 27 Sep. 2019

One-Dimensional Electronic States in Highly-Stacked InAs/GaAs Quantum Dot Superlattices
KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, English, Compound Semiconductor Week 2019, Nara, International conference
May 2019

近接積層InAs/GaAs量子ドット超格子の1次元電子状態の測定温度依存性
海津利行; 喜多隆
Oral presentation, Japanese, 第66回応用物理学会春季学術講演, Domestic conference
11 Mar. 2019
09 Mar. 2019- 12 Mar. 2019

“Effects of GaAs-Capping Temperature on The Emission Wavelength of InAs Quantum Dots Grown on Nitrogen-Doped GaAs(001)Surfaces
NAOTO UENISHI; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, English, 20th International Conference on Molecular Beam Epitaxy, China, International conference
Sep. 2018

多孔質炭素電極を用いた光化学電池の基礎特性
ENOMOTO MASAHITO; WAKAKI HIROTOMO; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, Japanese, 平成30年度半導体エレクトロニクス部門委員会第1回研究会, 奈良先端科学技術大学院大学, Domestic conference
Jul. 2018

Carrier Collection Efficiency of Intraband-Excited Carriers in Two-Step Photon Up-Conversion Solar Cells
ASAHI SHIGEO; K. Nishimura; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, English, 7th edition of the World Conference on Photovoltaic Energy Conversion, Hawaii, International conference
Jun. 2018

Multiple Stacking of Capping Temperature-Controlled InAs/GaAs Quantum Dots with AlGaAs Barrier Layers for Broadband Emission
KAIZU TOSHIYUKI; T. Koike; KITA TAKASHI
Oral presentation, English, Compound Semiconductor Week 2018, Cambridge, MA, USA, International conference
May 2018

One-Dimensional Electronic States in Closely Stacked InAs/GaAs Quantum Dots with Different Growth Temperatures
KAIZU TOSHIYUKI; K. Hirao; KITA TAKASHI
Oral presentation, English, International Conference on Nanophotonics and Nano-optoelectronics 2018, Yokohama, International conference
Apr. 2018

Extraction Efficiency of Up-Converted Electrons in Two-Step Photon Up-Conversion Solar Cells
ASAHI SHIGEO; K. Nishimura; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, English, International Conference on Nanophotonics and Nano-optoelectronics 2018, Yokohama, International conference
Apr. 2018

Two-Step Photo-Excitated Electrons with Extremely-Long Lifetime in Intermedeate-band Solar Cells Using Dot-in Well Strucyure
ASAHI SHIGEO; H. Teranishi; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, English, 27th Photovoltaic Science and Engineering Conference, Otsu, International conference
Nov. 2017

Infrared Absorption Characteristics in Two-Step Photon Up-Conversion Solar Cells
K. Kusaki; ASAHI SHIGEO; KAIZU TOSHIYUKI; R. Tamaki; Y. Okada; KITA TAKASHI
Oral presentation, English, 27th Photovoltaic Science and Engineering Conference, Otsu, International conference
Nov. 2017

Efficient Two-Step Photocurrent in Intermediate Band Solar Cells Using Highly Homogeneous InAs/GaAs Quantum-Dot Superlattice
K. Hirao; ASAHI SHIGEO; KAIZU TOSHIYUKI; HARADA YUKIHIRO; KITA TAKASHI
Oral presentation, English, 27th Photovoltaic Science and Engineering Conference, Otsu, International conference
Nov. 2017

One-Dimensional Miniband Formation in InAs/GaAs Quantum Dot Superlattice
KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, English, International Symposium on Novel Energy Nanomaterials, Catalysts and Surfaces for Future Earth -Material Research, Characterization and Imaging by In situ/Operando XAFS and X-ray Techniques-, Tokyo, International conference
Oct. 2017

Laser-induced Hydrogen Production Using Porous Carbon
M. Enomoto; Y. Kawajiri; KAIZU TOSHIYUKI; T. Uchino; Y. Ichihashi; K. Taniya; S. Nishiyama; M. Mizuhata; M. Sugiyama; M. Ueno; KITA TAKASHI
Oral presentation, English, International Symposium on Novel Energy Nanomaterials, Catalysts and Surfaces for Future Earth -Material Research, Characterization and Imaging by In situ/Operando XAFS and X-ray Techniques-, Tokyo, International conference
Oct. 2017

低温キャップInAs/GaAs量子ドット超格子中間バンド型太陽電池における熱脱出の抑制
平尾 和輝; ASAHI SHIGEO; KAIZU TOSHIYUKI; HARADA YUKIHIRO; KITA TAKASHI
Oral presentation, Japanese, 第78回応用物理学会秋季学術講演会, Domestic conference
Sep. 2017

低温キャップInAs/GaAs量子ドット超格子中間バンド型太陽電池における2段階光吸収の増強
平尾 和輝; ASAHI SHIGEO; KAIZU TOSHIYUKI; HARADA YUKIHIRO; KITA TAKASHI
Oral presentation, Japanese, 日本材料学会半導体エレクトロニクス部門委員会平成29年度第1回研究会, Domestic conference
Sep. 2017

Photon Up-Converted Photocurrent in a Single Junction Solar Cell with a Hetero-Interface
K. Kusaki; ASAHI SHIGEO; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, English, 33rd European Photovoltaic Solar Energy Conference and Exhibition, Netherlands, International conference
Sep. 2017

Increasing Photovoltage Boosted by Photon Up-Conversion in a Single-Junction Solar Cell with a Hetero-Interface
ASAHI SHIGEO; K. Kusaki; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, English, 33rd European Photovoltaic Solar Energy Conference and Exhibition, Netherlands, International conference
Sep. 2017

Extended Optical Response of Two-Step Photoexcitation in InAs/GaAs Quantum-Dot Superlattice Intermediate Band Solar Cells
K. Hirao; ASAHI SHIGEO; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, English, 33rd European Photovoltaic Solar Energy Conference and Exhibition, Netherlands, International conference
Sep. 2017

Stokes and Anti-Stokes Photoluminescence in Nitrogen ð-Doped Layer in GaAs
HARADA YUKIHIRO; Y. Ogawa; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, English, 29th International Conference on Defects in Semiconductors, Matsue, International conference
Jul. 2017

Increasing Current Generation by Photon Up-Conversion in a Single-Junction Solar Cell with a Hetero-Interface
ASAHI SHIGEO; K. Kusaki; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, English, 2017 IEEE Photovoltaic Specialists Conference, Washington D.C., International conference
Jun. 2017

Broadband Control of Polarization Characteristics in Closely-Stacked InAs/GaAs Quantum Dots
KAIZU TOSHIYUKI; Y. Tajiri; KITA TAKASHI
Oral presentation, English, Compound Semiconductor Week 2017, Berlin, International conference
May 2017

GaAs中のエピタキシャル窒素膜における反ストークス発光
HARADA YUKIHIRO; 小川 泰弘; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, Japanese, 第64回応用物理学会春季学術講演会, Domestic conference
Mar. 2017

GaAs中のデルタドーピング窒化層を利用した光によるフォノン制御
小川 泰弘; HARADA YUKIHIRO; KAIZU TOSHIYUKI; KITA TAKASHI
Poster presentation, Japanese, 第27回光物性研究会, Domestic conference
Dec. 2016

Two-dimensional delocalized electronic states of epitaxial N d-doped layer in GaAs
Y. Harada; Y. Ogawa; T. Kaizu; T. Kita
Invited oral presentation, English, Energy, Materials, and Nanotechnology Meeting on Epitaxy, Invited, International conference
Sep. 2016

InAs/GaAs量子ドット中間バンド型太陽電池における電子の熱脱出過程の解明
平尾 和輝; 渡辺 翔; ASAHI SHIGEO; KAIZU TOSHIYUKI; HARADA YUKIHIRO; KITA TAKASHI
Oral presentation, Japanese, 第77回応用物理学会秋季学術講演会, Domestic conference
Sep. 2016

Control In-Ga Intermixing in InAs Quantum Dot on Nitrogen δ-Doped GaAs
KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, English, 19th International Conference on Molecular-Beam Epitaxy, Montpellier, International conference
Sep. 2016

Spatial Electronic Structure of an Isovalent Nitrogen Center in GaAs
R. Plantenga; V. Kortan; KAIZU TOSHIYUKI; HARADA YUKIHIRO; KITA TAKASHI; M. Flatte; P. Koenraad
Oral presentation, English, 33rd International Conference on the Physics of Semiconductors, Beijing, International conference
Aug. 2016

Thermal carrier-escape process from the intermediate band in InAs/GaAs quantum dot solar cells
K. Hirao; S. Asahi; S. Watanabe; T. Kaizu; Y. Harada; T. Kita
Poster presentation, Japanese, 第35回電子材料シンポジウム, Domestic conference
Jul. 2016

Two-Dimensional Energy Dispersion in Thermally Annealed Epitaxial Nitrogen Atomic Sheet in GaAs
Y. Ogawa; HARADA YUKIHIRO; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, English, 2016 Compound Semiconductor Week, Toyama, International conference
Jun. 2016

Polarization Anisotropy of Electroluminescence and Net-Modal Gain in Highly Stacked InAs/GaAs Quantum-Dot Laser Devices
KAIZU TOSHIYUKI; M. Suwa; T. Andachi; HARADA YUKIHIRO; KITA TAKASHI
Oral presentation, English, 2016 Compound Semiconductor Week, Toyama, International conference
Jun. 2016

GaAs First-Spacer-Layer Thickness Dependence of Polarized Photoluminescence Properties of Closely-Stacked InAs/GaAs Quantum Dots with Long-Wavelength Emission
Y. Tajiri; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, English, 2016 Compound Semiconductor Week, Toyama, International conference
Jun. 2016

Extended Electron Lifetime in Intermediate-Band Solar Cells Using Dot-in-Well Structure
S. Asahi; H. Teranishi; S. Watanabe; T. Kada; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, English, 32nd European Photovoltaic Solar Energy Conference and Exhibition, Munich, International conference
Jun. 2016

Enhancement of Two-Step Photon Absorption Due to Miniband Formation in InAs/GaAs Quantum Dot Superlattice Solar Cell
S. Watanabe; S. Asahi; T. Kada; KAIZU TOSHIYUKI; HARADA YUKIHIRO; KITA TAKASHI
Oral presentation, English, 32nd European Photovoltaic Solar Energy Conference and Exhibition, Munich, International conference
Jun. 2016

急速熱アニールしたGaAs中のエピタキシャル窒素膜の輻射再結合寿命
小川 泰弘; HARADA YUKIHIRO; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, Japanese, 第63回応用物理学会春季学術講演会, Domestic conference
Mar. 2016

Time-Resolved Photoluminescence of Thermally-Annealed Nitrogen Atomic Sheet in GaAs
Y. Ogawa; HARADA YUKIHIRO; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, English, 17th International Conference on Physics of Light-Matter Coupling in Nanostructures, Nara, International conference
Mar. 2016

Polarized Photoluminescence Properties of Closely-Stacked InAs/GaAs Quantum Dots with Long-Wavelength Emission
KAIZU TOSHIYUKI; Y. Tajiri; KITA TAKASHI
Oral presentation, English, 17th International Conference on Physics of Light-Matter Coupling in Nanostructures, Nara, International conference
Mar. 2016

InAs/GaAs量子ドット超格子太陽電池におけるミニバンド形成が2段階光吸収に与える影響
渡辺 翔; 朝日 重雄; 加田 智之; KAIZU TOSHIYUKI; HARADA YUKIHIRO; KITA TAKASHI
Oral presentation, Japanese, 第63回応用物理学会春季学術講演会, Domestic conference
Mar. 2016

Extremely Long Carrier Lifetime Due to Electron-Hole Separation in Quantum-Dot Intermediate-Band Solar Cells
S. Asahi; H. Teranishi; T. Kada; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, English, 17th International Conference on Physics of Light-Matter Coupling in Nanostructures, Nara, International conference
Mar. 2016

InAs/GaAs量子ドット超格子を利用したホットキャリア型太陽電池
渡部 大樹; HARADA YUKIHIRO; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, Japanese, 第76回応用物理学会秋季学術講演会, Domestic conference
Sep. 2015

Epitaxial Nitrogen Atomic Sheet in GaAs Grown by Nitorogen δ-Doping Technique
HARADA YUKIHIRO; T. Baba; Y. Ogawa; KAIZU TOSHIYUKI; KITA TAKASHI
Invited oral presentation, English, 5th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, Invited, Taiwan, International conference
Sep. 2015

急速熱アニールによるGaAs中のエピタキシャル窒素シートにおける2次元物性の制御
小川 泰弘; HARADA YUKIHIRO; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, Japanese, 日本材料学会半導体エレクトロニクス部門委員会平成27年度第1回研究会, Domestic conference
Jul. 2015

Enhancement of Two Dimensionality in Epitaxial Nitrogen Atomic Sheet in GaAs by Rapid Thermal Annealing
HARADA YUKIHIRO; Y. Ogawa; T. Baba; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, English, 21st International Conference on Electronic Properties of Two-Dimensional Systems/17th International Conference on Modulated Semiconductor Structures, Sendai, International conference
Jul. 2015

Broadband Control of Emission Wavelength of InAs/GaAs Quantum Dots by Growth Temperature GaAs Capping Layer
T. Kaizu; T. Matsumura; KITA TAKASHI
Oral presentation, English, 21st International Conference on Electronic Properties of Two-Dimensional Systems/17th International Conference on Modulated Semiconductor Structures, Sendai, International conference
Jul. 2015

Annealing effects on the delocalized electronic states of epitaxial two-dimensional nitrogen atomic sheet in GaAs
Y. Ogawa; Y. Harada; T. Baba; T. Kaizu; T. Kita
Poster presentation, Japanese, 34th Electronic Materials Symposium, Domestic conference
Jul. 2015

Two-Step Photocarrier Generation in InAs/GaAs Quantum Dot Superlattice Intermediate Band Solar Cell
T. Kada; T. Tanibuchi; S. Asahi; T. Kaizu; Y. Harada; KITA TAKASHI; R. Tamaki; Y. Okada; K. Miyano
Oral presentation, English, 42nd IEEE Photovoltaic Specialists Conference, New Orleans, International conference
Jun. 2015

Saturable Two-Step Photocurrent Generation in Intermediate-Band Solar Cells Including InAs Quantum Dots Embedded in Al0.3Ga0.7As/GaAs Quantum Wells
S. Asahi; H. Teranishi; N. Kasamatsu; T. Kada; T. Kaizu; KITA TAKASHI
Oral presentation, English, 42nd IEEE Photovoltaic Specialists Conference, New Orleans, International conference
Jun. 2015

GaAs中のエピタキシャル二次元窒素膜におけるアニール効果
HARADA YUKIHIRO; 小川 泰弘; 馬場 健; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, Japanese, 第62回応用物理学会春季学術講演会, Domestic conference
Mar. 2015

GaAs中のエピタキシャル2次元窒素シート非局在電子状態の発光ダイナミクス
馬場 健; HARADA YUKIHIRO; KAIZU TOSHIYUKI; KITA TAKASHI
Poster presentation, Japanese, 第24回光物性研究会, Domestic conference
Dec. 2014

Two-dimensional electronic states of epitaxial nitrogen atomic sheet in GaAs
Y. Harada; T. Baba; T. Kaizu; T. Kita
Invited oral presentation, English, International Symposium on Recent Progress of Photonic Devices and Materials, Invited, International conference
Nov. 2014

Suppression of Thermal Carrier Escape and Efficient Photo-Carrier Generation by Two-Step Photon Absorption in Intermediate-Band Solar Cells Using a Dot-in-Well Structure
S. Asahi; H. Teranishi; N. Kasamatsu; T. Kada; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, English, 6th World Conference on Photovoltaic Energy Conversion, Kyoto International Conference Center, International conference
Nov. 2014

Photoluminescence Decay Dynamics in Epitaxial Two-Dimensional Nitrogen Atomic Sheet in GaAs
T. Baba; HARADA YUKIHIRO; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, English, International Symposium on Recent Progress of Photonic Devices and Materials, Kobe University, International conference
Nov. 2014

Modulation of Photoluminescence Properties of InAs Quantum Dots on Nitrogen δ-Doped GaAs
KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, English, International Symposium on Recent Progress of Photonic Devices and Materials, Kobe University, International conference
Nov. 2014

Photoluminescence Properties of InAs Quantum Dots on Nitrogen δ-Doped GaAs
KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, English, Eleventh International Conference on Flow Dynamics, Sendai, International conference
Oct. 2014

GaAs中のエピタキシャル二次元窒素膜の電子状態 (II)
HARADA YUKIHIRO; 馬場 健; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, Japanese, 第75回応用物理学会学術講演会, Domestic conference
Sep. 2014

GaAs中のエピタキシャル二次元窒素膜における発光ダイナミクス
馬場 健; HARADA YUKIHIRO; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, Japanese, 第75回応用物理学会学術講演会, Domestic conference
Sep. 2014

Enhancement of interaction among nitrogen pair centers in epitaxial two-dimensional nitrogen atomic sheet in GaAs
T. Baba; Y. Harada; T. Kaizu; T. Kita
Poster presentation, Japanese, 33rd Electronic Materials Symposium, Domestic conference
Jul. 2014

Structural Modification of InAs Quantum Dots Grown on Nitrided GaAs(001)Surface
KAIZU TOSHIYUKI; K. Taguchi; KITA TAKASHI
Poster presentation, English, 8th International Conference on Quantum Dots, Pisa, International conference
May 2014

窒素δドープGaAs(001)層上のInAs量子ドット自己形成
KAIZU TOSHIYUKI; 田口 航平; KITA TAKASHI
Oral presentation, Japanese, 第61回応用物理学会春季学術講演会, 応用物理学会, 神奈川, Domestic conference
Mar. 2014

InAs/GaAs量子ドット太陽電池の量子準位を介した２段階光吸収
加田 智之; 朝日 重雄; KAIZU TOSHIYUKI; KITA TAKASHI; 玉置 亮; 宮野 健次郎; 岡田 至崇
Oral presentation, Japanese, 第61回応用物理学会春季学術講演会, 応用物理学会, 神奈川, Domestic conference
Mar. 2014

InAs/AlxGa1-xAs量子ドットにおけるキャリアの熱活性特性
朝日 重雄; 寺西 陽之; 笠松 直史; 加田 智之; KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, Japanese, 第61回応用物理学会春季学術講演会, 応用物理学会, 神奈川, Domestic conference
Mar. 2014

Fabrication of InAs Quantum Dots on Nitrided GaAs (001) Surface
KAIZU TOSHIYUKI; KITA TAKASHI
Oral presentation, English, 10th International Conference on Flow Dynamics, Sendai International Center, International conference
Nov. 2013

Photoluminescence Properties of Height-controlled GaAs Nanodisks Fabricated by Neutral Beam Etching
KAIZU TOSHIYUKI; Y. Tamura; M. Igarashi; W. Hu; C. Thomas; S. Samukawa; Y. Okada
Poster presentation, English, 40th International Symposium on Compound Semiconductors, Kobe, International conference
May 2013

中性粒子ビームエッチングにより作製したGaAsナノディスクのPL特性のディスク高さ依存性
KAIZU TOSHIYUKI; 田村 洋典; 五十嵐 誠; トーマス セドリック; 胡 衛国; 寒川 誠二; 岡田 至崇
Poster presentation, Japanese, 第60回応用物理学会春季学術講演会, 応用物理学会, 神奈川, Domestic conference
Mar. 2013

トップダウン加工GaAsナノディスクにおけるキャリアスピン緩和
木場 隆之; 須崎 健太; 田村 洋典; 五十嵐 誠; セドリック トーマス; 胡 衛国; KAIZU TOSHIYUKI; 岡田 至崇; 寒川 誠二; 村山 明宏
Oral presentation, Japanese, 第60回応用物理学会春季学術講演会, 応用物理学会, 神奈川, Domestic conference
Mar. 2013

単層InAs/GaAs量子ドット構造のDLTS評価
中野 廣一; KAIZU TOSHIYUKI; 星井 拓也; 岡田至崇
Oral presentation, Japanese, 秋季第73回応用物理学会学術講演会, 応用物理学会, 愛媛, Domestic conference
Sep. 2012

原子状水素援用MBEによる2次元GaAsナノディスクアレイのGaAs/AlGaAsキャップ層再成長
KAIZU TOSHIYUKI; 田村 洋典; 五十嵐 誠; 胡 衛国; 寒川 誠二; 岡田 至崇
Oral presentation, Japanese, 秋季第73回応用物理学会学術講演会, 応用物理学会, 愛媛, Domestic conference
Sep. 2012

バイオテンプレート極限加工によるGaAsナノディスクの作製と発光特性
田村 洋典; 五十嵐 誠; トーマス セドリック; モハマド エルマン ファウジ; 胡 衛国; 塚本 里加子; KAIZU TOSHIYUKI; 星井 拓也; 木場 隆之; 山下 一郎; 岡田 至崇; 村山 明宏; 寒川 誠二
Oral presentation, Japanese, 秋季第73回応用物理学会学術講演会, 応用物理学会, 愛媛, Domestic conference
Sep. 2012

Observation of photo- luminescence from 2-dimentional GaAs nanodisk array regrown by atomic hydrogen-assisted molecular beam epitaxy
KAIZU TOSHIYUKI; Y. Tamura; M. Igarashi; W. Hu; R. Tsukamoto; I. Yamashita; S. Samukawa; Y. Okada
Oral presentation, English, 17th International Conference on Molecular Beam Epitaxy, Nara, International conference
Sep. 2012

2次元Siナノディスクアレイにおけるミニバンド形成と電気伝導性の向上
モハマド エルマン ファウジ; 五十嵐 誠; 胡 衛国; KAIZU TOSHIYUKI; 岡田 至崇; 寒川 誠二
Oral presentation, Japanese, 秋季第73回応用物理学学術講演会, 応用物理学, 愛媛, Domestic conference
Sep. 2012

High-density and Sub-20-nm GaAs Nanodisk Array Fabricated Using Neutral Beam Etching Process for High Performance QDs Devices
Y. Tamura; M. Igarashi; M. E. Fauzi; R. Tsukamoto; KAIZU TOSHIYUKI; T. Kiba; I. Yamashita; Y. Okada; A. Murayama; S. Samukawa
Oral presentation, English, 12th International Conference on Nanotechnology, United Kingdom, International conference
Aug. 2012

バイオテンプレート極限加工によるGaAs 量子ナノディスク構造の制御
田村 洋典; 五十嵐 誠; モハマド エルマン ファウジ; 胡 衛国; KAIZU TOSHIYUKI; 岡田 至崇; 寒川 誠二
Oral presentation, Japanese, 春季第59回応用物理学会関係連合講演会, 応用物理学会, 東京, Domestic conference
Mar. 2012

障壁材料としてSiCを用いたSi量子ナノディスクアレイ構造の電気・光学特性
五十嵐 誠; KAIZU TOSHIYUKI; 岡田 至崇; 木場 隆之; 村山 明宏; 寒川 誠二
Oral presentation, Japanese, 秋季第72回応用物理学会学術講演会, 応用物理学会, 山形, Domestic conference
Sep. 2011

Fabrication of Two-dimensional Array of Sub-10nm GaAs Nanodisk by Combination of Bio-template and Neutral Beam Etching
林 士弘; 王 宣又; 黄 啓賢; 塚本 里加子; KAIZU TOSHIYUKI; 五十嵐 誠; 岡田 至崇; 寒川誠二
Oral presentation, Japanese, 秋季第72回応用物理学会学術講演会, 応用物理学会, 山形, Domestic conference
Sep. 2011

Optical Absorption, Photo-Luminescence and Miniband Formation of a Highly Ordered and Dense 2-Dimensional Array of Si Nanodisks for Quantum Dot Solar Cells
M. Igarashi; C.H. Huang; X. Y. Wang; M. F. Budiman; Y. Tamura; T. Kiba; A. Murayama; KAIZU Toshiyuki; Y. Okada; S. Samukawa
Oral presentation, English, 37th IEEE Photovoltaic Specialists Conference, Seattle, International conference
Jun. 2011

Damage-free Top-down Processes of Fabricating Two-dimensional Array of Sub-10nm Nanometer GaAs Nanodisks using Bio-template and Neutral Beam Etching for Intermediate Band Solar Cell Applications
X. Y. Wang; C. H. Huang; R. Tsukamoto; KAIZU Toshiyuki; M. Igarashi; P. A. Mortemousque; H. Shinohara; Y. Okada; A. Murayama; K. Itoh; Y. Ohno; I. Yamashita; S. Samukawa
Oral presentation, English, 37th IEEE Photovoltaic Specialists Conference, Seattle, International conference
Jun. 2011

高密度InAs量子ドットのSb照射成長中断における時間分解X線回折測定(3)
山本 和輝; 角田 直輝; KAIZU TOSHIYUKI; 高橋 正光; 藤川 誠司; 山口 浩一
Oral presentation, Japanese, 秋季第71回応用物理学会学術講演会, 応用物理学会, 長崎, Domestic conference
Sep. 2010

シリコン(Si)ナノディスク2次元アレイによる高効率光吸収とバンドギャップエネルギー制御の実現
ブディマン モハマド; ファイルズ; 黄 啓賢; 王 宣又; KAIZU TOSHIYUKI; 五十嵐 誠; 大島 隆治; 岡田 至崇; 山下 一郎; 寒川 誠二
Oral presentation, Japanese, 秋季第71回応用物理学会学術講演会, 応用物理学会, 長崎, Domestic conference
Sep. 2010

高密度InAs量子ドットのSb照射成長中断における時間分解X線回折測定(2)
角田 直輝; KAIZU TOSHIYUKI; 高橋 正光; 藤川 誠司; 山口 浩一
Oral presentation, Japanese, 秋季第70回応用物理学会学術講演会, 応用物理学会, 富山, Domestic conference
Sep. 2009

Ybドープ2次元電子系におけるYbトラップ準位の考察
KAIZU TOSHIYUKI; 高増 正; 竹端 寛治; 今中 康貴
Oral presentation, Japanese, 日本物理学会第64回秋季大会, 日本物理学会, 東京, Domestic conference
Sep. 2009

Real-time X-ray diffraction measurements during Sb-mediated SK growth and annealing of InAs quantum dots
KAIZU Toshiyuki; N. Kakuda; M. Takahasi; S.Fujikawa; K. Yamaguchi
Poster presentation, English, 14th International Conference on Modulated Semiconductor Structures, Kobe, International conference
Jul. 2009

Magnetotransport properties of Ytterbium doped AlxGa1-xAs/GaAs two-dimensional electron system
KAIZU Toshiyuki; Y. Imanaka; K. Takehana; T. Takamasu
Poster presentation, English, 18th International Conference on Electronic Properties of Two-Dimensional Systems, Kobe, International conference
Jul. 2009

先端融合科学特論Ⅰ－７a スマート物質・材料工学
神戸大学

Advanced Science and TechnologyI-7a
Kobe University

Feb. 1999 - Present
The Japan Society of Applied Physics

Realization of integrated high sensitivity electric field sensor using quantum dot superlattice
和田 修; 小島 磨; 海津 利行; 原田 幸弘; 南 康夫
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research, Kobe University, Grant-in-Aid for Scientific Research (C), Coinvestigator, 本研究では外部の電界を量子ドット（QD）超格子構造に印加し、これを含む共振器構造を透過する光信号の変調成分をとらえることにより、電界を高感度に検出するセンサの実現を目指す。本年度は、量子効果の導入による電気光学係数自体の増大効果、および光共振器構造による光子の長寿命化による電気光学効果の増強効果、の二つの効果に焦点を合わせて研究を進めた。 QD超格子構造の電気光学係数の評価を行うための導波路素子の準備と電気光学係数評価光学系の検討を進めるとともに、光共振器構造の基本設計理論の構築に重点 をおいて研究を行い、以下のような成果を得た。
QD超格子構造を含む導波路素子については、暗電流や逆方向電圧印加特性など基本的特性を測定して光学測定への適用性を確かめた。また電気光学係数の計測光学系については、光信号偏光特性計測の精度を十分に高めるための光学系の新たな設計を行って部品選定を完了し、次年度の高精度測定系の構築の見通しを得た。
光共振器構造の設計においては、共振器のQ値増大による光子寿命の延長に起因する電気光学効果の増強と、Q値の増大に伴う透過光出力の減衰との間に生ずるトレードオフ関係を考慮しながら共振器構造の最適化を行うことが必要である。本年度は基本設計理論を構築することを目指して、多層膜構造の光学特性マトリクスを用いた計算アルゴリズムを考案し、外部電界の印加による透過光信号の位相変調信号の算定が可能であることを確認できたことにより、この計算方法が最適化探索に活用できることが分かった。, 22K04218
Apr. 2022 - Mar. 2025

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海津 利行
学術研究助成基金助成金／基盤研究(C), Principal investigator
Apr. 2017 - Mar. 2020

未踏光周波数帯域を開拓する広帯域偏波無依存光アンプ基盤技術の構築
喜多 隆
科学研究費補助金／基盤研究(B)
Apr. 2016 - Mar. 2019