Dr. Eng., Univ.Tokyo, Mar. 1993

STMBE (STM placed completely inside MBE growth chamber)

Organic-metal catalyst supported by semiconductor

Quantum Dot

Compound semiconductor

Scanning Tunneling Microscopy

Molecular Beam Epitaxy

Nanotechnology/Materials, Crystal engineering, Semiconductor Crystal Engneering

Apr. 2021 - Present
Università degli Studi di Milano-Bicocca,, Dipartimento di Scienza dei Materiali,, Joint Project Professor

Apr. 2021 - Mar. 2024
The University of Electro-Communications,, Specially-appointed Professor

Apr. 2017 - Mar. 2021
National Institute of Technology, Anan College,, Visiting Professor

Sep. 2017 - Aug. 2020
Università degli Studi di Milano-Bicocca,, Dipartimento di Scienza dei Materiali,, Visiting Professor, Assegnista di ricerca (Research Fellow)

Apr. 2007 - Mar. 2017
National Institute of Technology, Anan College,, 日亜化学寄附講座, Special Research Professor (Nichia Corporation Endowed Chair)

May 2013 - Sep. 2013
Osaka University,, The Institute of Scientific and Industrial Research,, Visiting Professor

Apr. 2011 - Mar. 2012
The University of Tokyo,, The Institute for Solid State Physics,, Visiting Professor

Jan. 2003 - Mar. 2007
The University of Tokyo,, Institute of Industrial Science,, Specially Appointed Associate Professor

Apr. 2001 - Dec. 2002
National Institute for Materials Science,, Nanodevice (Research) Group,, Senior Researcher

Apr. 1993 - Mar. 2001
Science and Technology Agency,, National Research Institute for Metals,, Researcher → Senior Researcher

Aug. 1988 - Dec. 1989
The University of Michigan,, Department of Electrical Engineering,, Research Assistant (supported by NASA-Langley, NASA-CR-185439,185440)

Apr. 1986 - Mar. 1987
Science and Technology Agency,, National Research Institute for Metals,, Intern

Apr. 1990 - Mar. 1993
The University of Tokyo,, Graduate School of Engineering,, Department of Electronic Engineering, Doctor of Engineering, Japan

Sep. 1988 - Dec. 1989
The University of Michigan,, Graduate School of Engineering,, Department of Electrical Engineering, M.S.E. (Master of Science in Engineering), United States

Apr. 1983 - Mar. 1987
Tokyo University of Science,, Faculty of Engineering,, Department of Electrical Engineering, B.S., Japan

Apr. 1979 - Mar. 1982
Kamitsuruma Senior High School, Japan

Droplet free self-assembling of high density nanoholes on GaAs(100) via thermal drilling
Federico Cesura; Stefano Vichi; Artur Tuktamyshev; Sergio Bietti; Alexey Fedorov; Stefano Sanguinetti; Kanji Iizuka; Shiro Tsukamoto
Last, Journal of Crystal Growth, Elsevier BV, 630, 127588-127588, Mar. 2024, Peer-reviwed
Scientific journal, English

First-principles calculations of Mn incorporation into GaAs(110)
Motoi Hirayama; Sho Kishigami; Takumi Goto; Shiro Tsukamoto
Last, Surface Science, Elsevier BV, 729, 122230-122230, Mar. 2023, Peer-reviwed
Scientific journal, English

Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control
Artur Tuktamyshev; Stefano Vichi; Federico Cesura; Alexey Fedorov; Sergio Bietti; Daniel Chrastina; Shiro Tsukamoto; Stefano Sanguinetti
Journal of Crystal Growth, 600, Dec. 2022, Peer-reviwed, We have successfully grown, through the detailed control of the growth kinetics, flat InAlAs metamorphic buffer layers on 2∘-off GaAs(111)A substrates using molecular beam epitaxy. Almost full plastic relaxation is obtained for a layer thickness > 40 nm. The control of an adatom diffusion length and a step ejection probability from the bunches permits a reduction of the InAlAs epilayer root-mean-square surface roughness to 0.55 nm.
Scientific journal

Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets
Mani Azadmand; Stefano Vichi; Federico Guido Cesura; Sergio Bietti; Daniel Chrastina; Emiliano Bonera; Giovanni Maria Vanacore; Shiro Tsukamoto; Stefano Sanguinetti
NANOMATERIALS, MDPI, 12, 21, Nov. 2022, Peer-reviwed, True, We investigated the composition uniformity of InGaN epilayers in presence of metal droplets on the surface. We used Plasma Assisted MBE to grow an InGaN sample partially covered by metal droplets and performed structural and compositional analysis. The results showed a marked difference in indium incorporation between the region under the droplets and between them. Based on this observation we proposed a theoretical model able to explain the results by taking into account the vapour liquid solid growth that takes place under the droplet by direct impingement of nitrogen adatoms.
Scientific journal, English

Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates
A. Tuktamyshev; A. Fedorov; S. Bietti; S. Vichi; K. D. Zeuner; K. D. Jöns; D. Chrastina; S. Tsukamoto; V. Zwiller; M. Gurioli; S. Sanguinetti
Applied Physics Letters, {AIP} Publishing, 118, 13, 133102-133102, 29 Mar. 2021, Peer-reviwed
Scientific journal

Nucleation of Ga droplets self-assembly on GaAs(111)A substrates
Artur Tuktamyshev; Alexey Fedorov; Sergio Bietti; Stefano Vichi; Riccardo Tambone; Shiro Tsukamoto; Stefano Sanguinetti
SCIENTIFIC REPORTS, NATURE RESEARCH, 11, 1, 6833-6833, Mar. 2021, Peer-reviwed, True, We investigated the nucleation of Ga droplets on singular GaAs(111)A substrates in the view of their use as the seeds for the self-assembled droplet epitaxial quantum dots. A small critical cluster size of 1-2 atoms characterizes the droplet nucleation. Low values of the Hopkins-Skellam index (as low as 0.35) demonstrate a high degree of a spatial order of the droplet ensemble. Around 350. C the droplet size distribution becomes bimodal. We attribute this observation to the interplay between the local environment and the limitation to the adatom surface diffusion introduced by the Ehrlich-Schwobel barrier at the terrace edges.
Scientific journal, English

Solid-State Dewetting Dynamics of Amorphous Ge Thin Films on Silicon Dioxide Substrates
Dimosthenis Toliopoulos; Alexey Fedorov; Sergio Bietti; Monica Bollani; Emiliano Bonera; Andrea Ballabio; Giovanni Isella; Mohammed Bouabdellaoui; Marco Abbarchi; Shiro Tsukamoto; Stefano Sanguinetti
NANOMATERIALS, MDPI, 10, 12, Dec. 2020, Peer-reviwed, True, We report on the dewetting process, in a high vacuum environment, of amorphous Ge thin films on SiO2/Si (001). A detailed insight of the dewetting is obtained by in situ reflection high-energy electron diffraction and ex situ scanning electron microscopy. These characterizations show that the amorphous Ge films dewet into Ge crystalline nano-islands with dynamics dominated by crystallization of the amorphous material into crystalline nano-seeds and material transport at Ge islands. Surface energy minimization determines the dewetting process of crystalline Ge and controls the final stages of the process. At very high temperatures, coarsening of the island size distribution is observed.
Scientific journal, English

Intermittent growth for InAs quantum dot on GaAs(001)
Takashi Toujyou; Tomoya Konishi; Motoi Hirayama; Koichi Yamaguchi; Shiro Tsukamoto
Last, JOURNAL OF CRYSTAL GROWTH, ELSEVIER, 551, 125891-125891, Dec. 2020, Peer-reviwed, We performed an intermittent growth of InAs quantum dots (QD) on GaAs(001) at 500 degrees C. The transition of surface structures during the growth was investigated by using reflection high energy electron diffraction observation. We also performed in situ observation of QD nucleation by using STMBE system in which a scanning tunneling microscope equipped within a molecular beam epitaxy chamber. We have found that the initial QDs formation occurred from 1.15 to 1.38 ML with the intermittent InAs supply. This InAs supply amount was much smaller than that of ordinary continuous deposition (similar to 1.66 ML). Moreover, the QDs mainly appeared on the terrace while they mainly appear on step edges by continuous growth at 500 degrees C. This indicates that the annealing parts of the intermittent growth affected the surface atomic structures of InGaAs wetting layer, uniforming the In fluctuation and stabilized the surface morphology. By the preparation of large (n x 3) and (2 x 4) area, the QD nucleation occurs with a smaller InAs supply on the surface.
Scientific journal, English

Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A
Artur Tuktamyshev; Alexey Fedorov; Sergio Bietti; Shiro Tsukamoto; Roberto Bergamaschini; Francesco Montalenti; Stefano Sanguinetti
NANOMATERIALS, MDPI, 10, 8, 1512-1512, Aug. 2020, Peer-reviwed, True, We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increase in the density with decreasing temperature, indeed, is observed only down to 160 degrees C, where the indium islands undertake the expected liquid-to-solid phase transition. Further decreasing the temperature causes a sizable reduction of the island density. An additional reentrant increasing behavior is observed below 80 degrees C. We attribute the above complex behavior to the liquid-solid phase transition and to the complex island-island interaction which takes place between crystalline islands in the presence of strain. Indium solid islands grown at temperatures below 160 degrees C have a face-centered cubic crystal structure.
Scientific journal, English

Droplet epitaxy quantum dot based infrared photodetectors
Stefano Vichi; Sergio Bietti; Arastoo Khalili; Matteo Costanzo; Federica Cappelluti; Luca Esposito; Claudio Somaschini; Alexey Fedorov; Shiro Tsukamoto; Patrick Rauter; Stefano Sanguinetti
NANOTECHNOLOGY, IOP PUBLISHING LTD, 31, 24, 245203-245203, Mar. 2020, Peer-reviwed, True, The fabrication and characterization of an infrared photodetector based on GaAs droplet epitaxy quantum dots embedded in Al0.3Ga0.7As barrier is reported. The high control over dot electronic properties and the high achievable number density allowed by droplet epitaxy technique permitted us to realize a device using a single dot layer in the active region. Moreover, thanks to the independent control over dot height and width, we were able to obtain a very sharp absorption peak in the thermal infrared region (3-8 mu m). Low temperature photocurrent spectrum was measured by Fourier spectroscopy, showing a narrow peak at 198 meV (similar to 6.3 mu m) with a full width at half maximum of 25 meV. The observed absorption is in agreement with theoretical prediction based on effective mass approximation of the dot electronic transition.
Scientific journal, English

Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates
Artur Tuktamyshev; Alexey Fedorov; Sergio Bietti; Shiro Tsukamoto; Stefano Sanguinetti
SCIENTIFIC REPORTS, NATURE PUBLISHING GROUP, 9, 1, 14520-14520, Oct. 2019, Peer-reviwed, True, A temperature activated crossover between two nucleation regimes is observed in the behavior of Ga droplet nucleation on vicinal GaAs(111)A substrates with a miscut of 2 degrees towards ((1) over bar(1) over bar2). At low temperature (<400 degrees C) the droplet density dependence on temperature and flux is compatible with droplet nucleation by two-dimensional diffusion. Increasing the temperature, a different regime is observed, whose scaling behavior is compatible with a reduction of the dimensionality of the nucleation regime from two to one dimension. We attribute such behavior to a presence of finite width terraces and a sizeable Ehrlich-Schwobel barrier at the terrace edge, which hinders adatom diffusion in the direction perpendicular to the steps.
Scientific journal, English

Raman spectroscopy of epitaxial InGaN/Si in the central composition range
Mani Azadmand; Emiliano Bonera; Daniel Chrastina; Sergio Bietti; Shiro Tsukamoto; Richard Notzel; Stefano Sanguinetti
JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, 58, Jun. 2019, Peer-reviwed, InGaN alloys are of raising interest for many applications. The possibility of tuning their functional properties with the composition sets the importance of finding methods to characterize these materials in a fast and non-destructive way. Raman spectroscopy is one of these techniques, being able to yield information about the composition, strain, and other relevant parameters. However, the method of measuring the composition with a calibration of the maximum A(1)(LO) band is today limited to regions which are either rich in In or in Ga. The middle composition range still needs a calibration. By measuring the Raman spectra of different InxGa1-xN alloys grown epitaxially on Si and by comparing them with the results from X-ray diffraction, we investigated this missing region of compositions. Within the range of 30%-65%, we have found that the position of the maximum of A1( LO) scales with the In fraction x as omega(x) = 736 - 135x - 24x(2) cm(-1). With this calibration, it is possible to determine, by Raman spectroscopy, the composition of an unknown alloy with an uncertainty of 5%. (C) 2019 The Japan Society of Applied Physics
Scientific journal, English

Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors
Mani Azadmand; Luca Barabani; Sergio Bietti; Daniel Chrastina; Emiliano Bonera; Maurizio Acciarri; Alexey Fedorov; Shiro Tsukamoto; Richard Notzel; Stefano Sanguinetti
SCIENTIFIC REPORTS, NATURE PUBLISHING GROUP, 8, 1, 11278-11278, Jul. 2018, Peer-reviwed, True, The growth dynamics of Ga(In)N semiconductors by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) at low temperatures (T = 450 degrees C) is here investigated. The presence of droplets at the growth surface strongly affects the adatom incorporation dynamics, making the growth rate a decreasing function of the metal flux impinging on the surface. We explain this phenomenon via a model that considers droplet effects on the incorporation of metal adatoms into the crystal. A relevant role is played by the vapor-liquid-solid growth mode that takes place under the droplets due to nitrogen molecules directly impinging on the droplets. The role of droplets in the growth dynamics here observed and modeled in the case of Nitride semiconductors is general and it can be extended to describe the growth of the material class of binary compounds when droplets are present on the surface.
Scientific journal, English

Atomistic behaviour of (n x 3)- reconstructed areas of InAs-GaAs(001) surface at the growth condition
Tomoya Konishi; Shiro Tsukamoto; Tomonoroi Ito; Toru Akiyama; Ryo Kaida
JOURNAL OF CRYSTAL GROWTH, ELSEVIER, 477, 104-109, Nov. 2017, Peer-reviwed, We have investigated the spatial evolution of (n x 3) surface reconstructed areas during the molecular beam epitaxial growth of InAs-GaAs(001) by using ab initio-based calculation and in situ observation, in order to understand the mechanism of consequent QD nucleation. Statistical analysis of (n x 3)-reconstructed morphology reveals that the fraction of (8 x 3)-reconstructed areas, as well as those of (4 x 3) and (6 x 3), appears and decreases in the later stage of the growth. This behaviour is consistent with the result of our ab initio-based calculation incorporating chemical potentials of source materials in the gas phase. In contrast, fragmented (2 x 3) areas remain throughout the InAs growth as potential QD nucleation sites. (C) 2017 Elsevier B.V. All rights reserved.
Scientific journal, English

Hopkins-Skellam index and origin of spatial regularity in InAs quantum dot formation on GaAs(001)
Tomoya Konishi; Gavin R. Bell; Shiro Tsukamoto
Last, JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 117, 14, Apr. 2015, Peer-reviwed, We investigate the origin of the spatial regularity of arrays of InAs quantum dots (QDs) grown on GaAs(001). The Hopkins-Skellam index (HSI) is used with a newly developed calculation algorithm to quantify the spatial regularity both of QDs and of nm-sized surface reconstruction territories (SRTs) present in the InxGa1-xAs wetting layer prior to QD nucleation. The SRT is the minimum extent of a surface reconstruction region needed for one QD to nucleate. By computing the evolving HSI of SRTs from sequences of in situ scanning tunnelling microscopy images during growth, we find that the spatial regularity of QDs is traced back to that of the (n x 3) SRTs as early as 0.6 monolayers of InAs coverage. This regularity is disturbed by the (n x 4) SRTs which appear at higher coverage. The SRT approach is discussed in comparison to conventional capture zone theories of surface growth. (C) 2015 AIP Publishing LLC.
Scientific journal, English

In situ STM observations of step structures in a trench around an InAs QD at 300 degrees C
T. Toujyou; T. Otsu; D. Wakamatsu; M. Kurisaka; T. Konishi; S. Tsukamoto
Last, JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 378, 44-46, Sep. 2013, Peer-reviwed, We successfully confirmed unique atomic structures in a trench around an InAs quantum dot (QD) at 300 degrees C. The trench structure was consisted by various atomic steps which included 4 x structures (InAs (4 x 2) and/or GaAs (4 x 6)) at an upper terrace edge next to a step. As distant from the upper terrace edge, frequency of 4 x structures decreased and gradually converged to 2 x structures (InAs (2 x 4), InAs (2 x 3), and GaAs (2 x 4)). (c) 2013 Elsevier B.V. All rights reserved.
Scientific journal, English

Incorporation of Mn atoms into the GaAs(110) surface
Motoi Hirayama; Shiro Tsukamoto
Last, JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 378, 50-52, Sep. 2013, Peer-reviwed, We have investigated Mn atoms on a GaAs(110) surface prepared by molecular beam epitaxy. Atomic-scale local structures have been observed at the temperature of 200 degrees C: single Mn atom and double Mn atoms exist in Ga row on scanning tunneling microscope (STM) images. We also show simulated STM images of Ga-substituted Mn atoms of GaAs(110), calculated from the first-principles calculations. Both experimental and theoretical STM images of single and double Mn configurations are in good agreement with each other. Therefore, the Mn atoms seems to be incorporated into the topmost Ga site due to STM images. (c) 2013 Elsevier B.V. All rights reserved.
Scientific journal, English

S-termination effects for the catalytic activities of Pd on GaN(0001) surfaces
T. Konishi; Y. Ueta; M. Hirayama; N. Nishiwaki; S. Tsukamoto
Last, APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, 258, 21, 8334-8337, Aug. 2012, Peer-reviwed, A S-terminated GaN(0 0 0 1) substrate covered with catalytically active Pd nanoparticles (PdNP) serves as a treatable and green chemical catalyst for various cross-coupling reactions. The role of S in the formation of PdNP has been studied so far, but the effect on the catalytic activity has not been investigated. In this study, we investigate the role of S-termination during the Mizoroki-Heck reaction from the view point of the stability of PdNP and the yield in repeated reactions. PdNP are formed on both S-terminated GaN(0 0 0 1) surface and non-terminated one, and their catalytic activities are compared when the quantity of PdNP is subminimal and excessive. It is found that S-termination serves as a binder of PdNP on GaN(0 0 0 1) surface, resulting in the self-regulation of PdNP leaching. (c) 2012 Elsevier B.V. All rights reserved.
Scientific journal, English

Initial stages of MnAs heteroepitaxy and nanoisland growth on GaAs(110) and (001) surfaces
Motoi Hirayama; Gavin R. Bell; Shiro Tsukamoto
Last, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, A V S AMER INST PHYSICS, 29, 4, Jul. 2011, Peer-reviwed, The authors have investigated the initial growth of MnAs layers by step-by-step epitaxy on GaAs(110) and GaAs(001). On both surfaces, MnAs nanocrystals developed as the initial stage of MnAs layer formation. Surprisingly, an ultrahigh density (similar to 1x10(12) cm(-2)) of the nanocrystals with a height of similar to 5 nm and a size of similar to 20 nm appeared on GaAs(110). On different surface orientations, the density and the size of the nanocrystals vary. The behavior of the nanocrystallizations can be explained by symmetry at the surface. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3610963]
Scientific journal, English

In situ STM observation during InAs growth in nano holes at 300 degrees C
Takashi Toujyou; Shiro Tsukamoto
Last, SURFACE SCIENCE, ELSEVIER SCIENCE BV, 605, 13-14, 1320-1323, Jul. 2011, Peer-reviwed, We have successfully confirmed that In atoms were favored to congregate inside hole structures, during In and As-4 irradiations, by a STMBE system which was a scanning tunneling microscope located inside a molecular beam epitaxy growth chamber. After forming 1.5 monolayer of InAs wetting layer (WL) on a GaAs (001) surface, we applied voltage at a particular site on the WL during As-4 irradiation at 300 degrees C, creating hole structures (widths: 33-66.1 nm, depths: 4.9-9.7 nm). With the In and As-4 irradiations, spontaneously, In atoms on the WL were congregated inside the holes, decreasing the volume of the hole structures. It was found that InAs growth rates inside the hole structures were 23.1-217 times larger than that at the WL growth region near the holes. (C) 2011 Elsevier B.V. All rights reserved.
Scientific journal, English

Nano-clustered Pd catalysts formed on GaN surface for green chemistry
Motoi Hirayama; Yukiko Ueta; Tomoya Konishi; Shiro Tsukamoto
Last, JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 323, 1, 150-153, May 2011, Peer-reviwed, We have succeeded in observing Pd nano-clusters, catalytic prime elements, on a GaN(0 0 0 1) surface by a scanning tunneling microscope for the first time. After the sample was reused, we found that nano-clusters (width: 11 nm, height: 2.2 nm) existed on the surface which still kept the catalytic activity, resulting that the neutral Pd atoms formed the nano-cluster. Moreover, the S-termination contributed to the formation of the dense and flat structure consisting of the Pd nano-clusters. (C) 2011 Elsevier B.V. All rights reserved.
Scientific journal, English

Spatial point analysis of quantum dot nucleation sites on InAs wetting layer
Tomoya Konishi; Shiro Tsukamoto
Last, SURFACE SCIENCE, ELSEVIER SCIENCE BV, 605, 5-6, L1-L5, Mar. 2011, Peer-reviwed, We perform spatial point analysis of InAs quantum dot (QD) nucleation sites and surface reconstruction domain patterns on an InAs wetting layer to investigate QD nucleation mechanisms in Stranski-Krastanow growth mode. An InAs wetting layer on a GaAs(001) substrate has been observed at 300 degrees C by using in situ scanning tunneling microscopy (STM) preceding QD formation. A nearest-neighbor analysis of the STM images finds that the point pattern of QD precursors is similar to that of (1 x 3)/(2 x 3) surface reconstruction domains which are specific to Ga-rich fluctuation. This provides the evidence that InAs QD nucleation is induced by Ga-rich fluctuation within an InAs wetting layer, as a technical implication for site-controlled QD growth for various QD devices. (C) 2011 Elsevier B.V. All rights reserved.
Scientific journal, English

Surface study of organopalladium molecules on S-terminated GaAs
Tomoya Konishi; Nagatoshi Nishiwaki; Takashi Toujyou; Takuma Ishikawa; Teruki Teraoka; Yukiko Ueta; Yoshifumi Kihara; Hideji Moritoki; Tatsuo Tono; Mio Musashi; Takashi Tada; Seiji Fujikawa; Masamitu Takahasi; Gavin Bell; Masahiko Shimoda; Shiro Tsukamoto
Last, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2, WILEY-V C H VERLAG GMBH, 8, 2, 405-407, 2011, Peer-reviwed, Organopalladium species ({Pd}) immobilized on an S-terminated GaAs substrate (S/GaAs) effectively catalyzes C-C bond formation in the Mizoroki-Heck reaction with cycle durability. However, the immobilizing mechanism of {Pd} is unknown. In this study, we deposited Pd(OCOCH3)(2) on S/GaAs in two different methods, namely dry-physical vapor-deposition and wet-chemical deposition, and compared the catalytic activities in the Mizoroki-Heck reaction. Also, S-termination and {Pd}-immobilization on GaAs grains were performed by the wet-chemical method to monitor the change in the surface chemical structure during the preparation process with diffuse reflectance Fourier transform infrared spectroscopy (FT-IR). FT-IR measurements implied that the immobilization of catalytic active {Pd} was related to the OH groups on the S-terminated surface. {Pd}-S/GaAs prepared dryphysically showed poor catalytic activity, because {Pd} was not immobilized under absence of OH groups. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
International conference proceedings, English

In situ STM observation of site-controlled InAs nano-dot growth on GaAs(001) during In and As-4 irradiations
Takashi Toujyou; Shiro Tsukamoto
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2, WILEY-V C H VERLAG GMBH, 8, 2, 402-404, 2011, Peer-reviwed, We have successfully fabricated site-controlled InAs nano dots during In and As-4 irradiations, observing by a STMBE: in situ scanning tunneling microscopy (STM) during molecular beam epitaxy (MBE) growth. After 1.5 monolayers (ML) of InAs wetting layer (WL) growth by ordinal Stranski-Krastanov (S-K) dot fabrication procedures, we applied voltage at a particular site on InAs WL during As-4 irradiation at 300 degrees C, creating the site where In atoms, which were migrating on the WL, favored to congregate. Then, we started supplying In atoms again. After supplying 1.52 ML (1.5 + 0.02 ML) of InAs, spontaneously, In atoms congregated this site, forming a dot structure without breaking a normal MBE growth. After further continually supplying 1.66 ML (1.5 + 0.16 ML) of InAs, we also confirmed that ordinal S-K dots were appeared. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
International conference proceedings, English

Density functional theory for green chemical catalyst supported on S-terminated GaN(0001)
Mami Yokoyama; Shiro Tsukamoto; Akira Ishii
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2, WILEY-V C H VERLAG GMBH, 8, 2, 438-440, 2011, Peer-reviwed, A novel function of nitried-based semiconductor is successfully developed for organic synthesis, in which palladium supported on the surface of S-terminated GaN(0001) serves as a unique green chemical catalyst. In this study we determined the structure of Pd-catalyst supported on Sterminated GaN(0001) surface by means of the density functional theory (DFT) within a Local Density Approximation (LDA). The important role of S on the case of GaN substrate is to make the number of the valence electron to be close to 0, in contrust to the case of GaAs. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
International conference proceedings, English

DFT calculation for green chemical catalyst with hydroxyl group supported on S-terminated GaN(0001)
Mami Yokoyama; Tatsunori Murayama; Shiro Tsukamoto; Akira Ishii
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5, WILEY-V C H VERLAG GMBH, 8, 5, 1594-1596, 2011, Peer-reviwed, A novel function of nitried-based semiconductor is successfully developed for organic synthesis, in which palladium supported on the surface of S-terminated GaN(0001) serves as a unique green chemical catalyst. In this study we determined the structure of OH on Pd-catalyst supported on Sterminated GaN(0001) surface by means of the density functional theory (DFT) within a Local Density Approximation (LDA). (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
International conference proceedings, English

In situ STM observation of site-controlled InAs nano-dot growth on GaAs(001) during In and As-4 irradiations
Takashi Toujyou; Shiro Tsukamoto
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2, WILEY-V C H VERLAG GMBH, 8, 2, 3029, 2011, We have successfully fabricated site-controlled InAs nano dots during In and As-4 irradiations, observing by a STMBE: in situ scanning tunneling microscopy (STM) during molecular beam epitaxy (MBE) growth. After 1.5 monolayers (ML) of InAs wetting layer (WL) growth by ordinal Stranski-Krastanov (S-K) dot fabrication procedures, we applied voltage at a particular site on InAs WL during As-4 irradiation at 300 degrees C, creating the site where In atoms, which were migrating on the WL, favored to congregate. Then, we started supplying In atoms again. After supplying 1.52 ML (1.5 + 0.02 ML) of InAs, spontaneously, In atoms congregated this site, forming a dot structure without breaking a normal MBE growth. After further continually supplying 1.66 ML (1.5 + 0.16 ML) of InAs, we also confirmed that ordinal S-K dots were appeared. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
International conference proceedings, English

Density Functional Theory for Green Chemical Catalyst Supported on S-Terminated GaN(0001)
Mami Yokoyama; Shiro Tsukamoto; Akira Ishii
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, AMER INST PHYSICS, 1399, 205-206, 2011, Peer-reviwed, A novel function of nitried-based semiconductor is successfully developed for organic synthesis, in which palladium supported on the surface of S-terminated GaN(0001) serves as a unique green chemical catalyst. In this study we determined the structure of Pd-catalyst supported on S-terminated GaN(0001) surface by means of the density functional theory (DFT) within a Local Density Approximation (LDA). The important role of S on the case of GaN substrate is to make the number of the valence electron to be close to 0, it happened same way for GaAs substrate.
International conference proceedings, English

Reusability, Durability and Treatability of Palladium Catalyst on a Semiconductor Plate: Comparison with Commercially Available Solid-Supported Palladium Catalysts
Nagatoshi Nishiwaki; Tomoya Konishi; Shiro Tsukamoto; Masahiko Shimoda
JOURNAL OF INORGANIC AND ORGANOMETALLIC POLYMERS AND MATERIALS, SPRINGER, 20, 4, 873-876, Dec. 2010, Peer-reviwed, A palladium catalyst supported on a semiconductor plate underwent the Heck reaction effectively to afford a coupling product. The catalytic plate was easily recovered from the reaction mixture with tweezers and reused several times without any special treatment. Comparison of reusability, durability, and treatability of seven kinds of commercially available solid-supported palladium catalysts and the semiconductor-supported catalyst plate was studied.
Scientific journal, English

Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth
Takashi Toujyou; Shiro Tsukamoto
NANOSCALE RESEARCH LETTERS, SPRINGER, 5, 12, 1930-1934, Dec. 2010, Peer-reviwed, True, Site-controlled InAs nano dots were successfully fabricated by a STMBE system (in situ scanning tunneling microscopy during molecular beam epitaxy growth) at substrate temperatures from 50 to 430 degrees C. After 1.5 ML of the InAs wetting layer (WL) growth by ordinal Stranski-Krastanov dot fabrication procedures, we applied voltage at particular sites on the InAs WL, creating the site where In atoms, which were migrating on the WL, favored to congregate. At 240 degrees C, InAs nano dots (width: 20-40 nm, height: 1.5-2.0 nm) were fabricated. At 430 degrees C, InAs nano dots (width: 16-20 nm, height: 0.75-1.5 nm) were also fabricated. However, these dots were remained at least 40 s and collapsed less than 1000 s. Then, we fabricated InAs nano dots (width: 24-150 nm, height: 2.8-28 nm) at 300 degrees C under In and As(4) irradiations. These were not collapsed and considered to high crystalline dots.
Scientific journal, English

Statistical Analysis of Surface Reconstruction Domains on InAs Wetting Layer Preceding Quantum Dot Formation
Tomoya Konishi; Shiro Tsukamoto
NANOSCALE RESEARCH LETTERS, SPRINGER, 5, 12, 1901-1904, Dec. 2010, Peer-reviwed, True, Surface of an InAs wetting layer on GaAs(001) preceding InAs quantum dot (QD) formation was observed at 300 degrees C with in situ scanning tunneling microscopy (STM). Domains of (1 x 3)/(2 x 3) and (2 x 4) surface reconstructions were located in the STM image. The density of each surface reconstruction domain was comparable to that of subsequently nucleated QD precursors. The distribution of the domains was statistically investigated in terms of spatial point patterns. It was found that the domains were distributed in an ordered pattern rather than a random pattern. It implied the possibility that QD nucleation sites are related to the surface reconstruction domains.
Scientific journal, English

DFT calculation for palladium supported on s-terminated GaN as green chemical catalyst
Mami Yokoyama; Shiro Tsukamoto; Akira Ishii
e-Journal of Surface Science and Nanotechnology, SURFACE SCI SOC JAPAN, 8, 377-380, 13 Nov. 2010, A novel function of nitried-based semiconductor is successfully developed for organic synthesis, in which palladium supported on the surface of S-terminated GaN(0001) serves as a unique green chemical catalyst. In this study we determined the structure of Pd-catalyst supported on S-terminated GaN(0001) surface by means of the density functional theory (DFT) within a Local Density Approximation (LDA). The important role of S in the case of GaN substrate is to make the number of the valence electron to be close to 0, in contrust to the case of GaAs. © 2010 The Surface Science Society of Japan.
Scientific journal, English

Hard x-ray photoemission spectroscopic investigation of palladium catalysts immobilized on a GaAs(001) surface
M. Shimoda; T. Konishi; K. Tateishi; T. Toujyou; S. Tsukamoto; N. Nishiwaki; M. Arisawa; N. Hoshiya; S. Shuto; N. Isomura; H. Yokota; Y. Furukawa; K. Iizuka; T. Ogiwara; Y. Isozaki; Y. Yamashita; H. Yoshikawa; S. Ueda; K. Kobayashi
Journal of Applied Physics, 108, 2, 15 Jul. 2010, We present studies on the structure and chemical states of a catalyst developed by immobilizing palladium on S-terminated GaAs(001). Hard x-ray photoelectron spectroscopy (HX-PES) of core-level and valence band photoemission consistently indicates that the organopalladium molecules are reduced on the surface yielding Pd nanoparticles with a metallic nature. This finding is supported by high-resolution observations using scanning electron microscopy and backscattered electron image. HX-PES results also reveal that a portion of S atoms forming the S-termination is oxidized during the formation of Pd nanoparticles. © 2010 American Institute of Physics.
Scientific journal

Structure determination of Pd-catalyst supported on S-terminated GaAs(001) using DFT calculation
Akira Ishii; Hiroki Asano; Mami Yokoyama; Shiro Tsukamoto; Satoshi Shuto; Mitsuhiro Arisawa
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 2, WILEY-V C H VERLAG GMBH, 7, 2, 359-361, 2010, Peer-reviwed, The density functional calculation is performed to determine the structure of the reused palladium catalyst on sulphur terminated GaAs(001) surface for the Heck reaction. The DFT calculation has been done for S-terminated GaAs(001) surface with and without As of the topmost layer. The difference the two model of the S-terminated GaAs(001) is very small. Since, for both case, the binding energy of palladium atom is stronger due to the co-adsorption of sulphur, the role of sulphur is to make the binding of palladium stronger. Moreover, the heights of the position of the adsorbed palladium atom for both model cases are lower than sulphur atom on the surface. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
International conference proceedings, English

Development of a Recyclable and Low-Leaching Palladium Catalyst Supported on Sulfur-Modified Gallium Arsenide (001) for Use in Suzuki-Miyaura Coupling
Naoyuki Hoshiya; Nobuhiro Isomura; Masahiko Shimoda; Hideki Yoshikawa; Yoshiyuki Yamashita; Kanji Iizuka; Shiro Tsukamoto; Satoshi Shuto; Mitsuhiro Arisawa
CHEMCATCHEM, WILEY-V C H VERLAG GMBH, 1, 2, 279-285, Oct. 2009, Peer-reviwed, A newly, developed, environmentally benign palladium catalyst supported on gallium arsenide, {Pd}-S-GaAs(001), has both the lowest recorded leaching and high recyclability for Suzuki-Miyaura coupling. Measurements of the catalyst surface by synchrotron radiation X-ray photoelectron spectroscopy show a relationship between the surface and the activity of the catalyst. Since {Pd}-S-GaAs(001) makes efficient use of the rare metal Pd, it is a useful palladium catalyst from an atom-economical perspective. Two heterogeneity tests clarify that the presence of immobilized palladium on S-GaAs is important for higher catalytic activity.
Scientific journal, English

Organopalladium catalyst on S-terminated GaAs(001)-(2x6) surface
Tomoya Konishi; Takashi Toujyou; Takuma Ishikawa; Gavin R. Bell; Shiro Tsukamoto
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, A V S AMER INST PHYSICS, 27, 5, 2206-2208, Sep. 2009, Organopalladium molecules, such as Pd(CH(3)COO)(2) ({Pd}), immobilized on the S-terminated GaAs(001), termed GaAs-S-{Pd} have high catalytic activity and cycle durability in the Mizoroki-Heck reaction. It is thought that the presence of Ga-S bonds in the single atomic layer S-termination is essential for these catalytic properties despite the much higher thickness (similar to 100 nm) of the {Pd} films. In this study, the authors demonstrate the retention of Ga-S bonds in ultrathin GaAs-S-{Pd} by using reflection high-energy electron diffraction and scanning tunneling microscopy (STM). The ultrathin GaAs-S-{Pd} was prepared by using a vapor-deposition technique. Deposited {Pd} was observed as similar to 1 nm dotlike structures with STM. The adsorption rate of {Pd} was also investigated. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3193687]
Scientific journal, English

Green Chemical Catalyst Supported on S-Terminated GaN(0001)
Nagatoshi Nishiwaki; Masahiko Shimoda; Tomoya Konishi; Shiro Tsukamoto
APPLIED PHYSICS EXPRESS, IOP PUBLISHING LTD, 2, 5, May 2009, Peer-reviwed, A novel function of nitride-based semiconductor is successfully developed for organic synthesis, in which palladium supported on the surface of sulfur-terminated GaN(0001) serves as a unique green chemical catalyst. It efficiently catalyzes Heck reaction with simple manipulations and its catalytic activity is retained for several repeat reactions. Moreover, it is easily reused without any special treatment. A plausible mechanism for Pd adsorption is provided for the first time; the -SH groups on the surface of the substrate attract Pd2+, and reduce to Pd-0. The presence of Pd-0 on the surface was confirmed by X-ray photoelectron spectroscopy measurements. (c) 2009 The Japan Society of Applied Physics
Scientific journal, English

GaSb/GaAs Quantum Nanostructures by Molecular Beam Epitaxy
Koichi Yamaguchi; Shiro Tsukamoto; Kazunari Matsuda
Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics, Elsevier Inc., 271-292, 11 Sep. 2008, This chapter defines GaSb-based quantum nanostructures in a GaAs matrix that have unique band alignment of a staggered type II large bowing of the band gap and strong hole localization. GaSb/GaAs nanostructures including quantum wells (QWs) and quantum dots (QDs) are of considerable interest for use in various applications, such as infrared emitting and detecting devices, and memory and spin controlled devices. In the GaSb/GaAs heteroepitaxial growth, an exchange of group V elements and a large lattice mismatch of 7.8% between GaSb and GaAs should be noted to control the heterointerface. The chapter focuses on the GaSb/GaAs quantum nanostructures by MBE and introduces the surface reconstruction of GaSb on GaAs and the heterointerface structure of GaSb/ GaAs. It also introduces the self-assembled GaSb/GaAs QDs and the optical properties of GaSb/GaAs QDs.
In book, English

Preparation of tethered palladium catalysis supported on gold(111) and its surface characterization by X-ray photoelectron spectroscopy (XPS)
Rabbani M. Gulam; Masahiro Hamada; Ikuko Takamiya; Masahiko Shimoda; Satoshi Shuto; Atsushi Nishida; Shiro Tsukamoto; Mitsuhiro Arisawa
BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN, CHEMICAL SOC JAPAN, 81, 8, 1012-1018, Aug. 2008, Peer-reviwed, Chelated tethering ligands were confined on a Au(111) substrate, and the confinement of the ligands was confirmed by X-ray photoelectron spectroscopy (XPS). Palladium was anchored to the ligands to construct heterogeneous {Pd}-L-Au(111) catalysts (L = ligand). A {Pd}-Au(111) catalyst was also prepared by adsorbing the Pd complex directly on the Au(I 11) substrate without a tethering ligand. Both types of catalysts were used in the Mizoroki-Heck reaction to evaluate their catalytic activities. The tether-ligated Pd catalyst {Pd}-L-Au(111) activity decreased with recycling, whereas the {Pd}-Au(111) catalyst was quite stable upon reuse. The surfaces of both catalyst types were evaluated using XPS to determine the presence of tethering ligands and/or Pd on the Au(111). The ligands of the tether-ligated Pd catalysts could not be detected on the Au(111) surface after the Mizoroki-Heck reaction, which suggests weak bonding of the S-Au by which the ligand is bound to the Au(111) substrate.
Scientific journal, English

In-situ STM Studies on III-V Compound Semiconductor Surfaces during MBE Growth
塚本史郎
表面科学, The Surface Science Society of Japan, 29, 12, 758-764 (J-STAGE)-764, 2008, High density arrays of quantum dots (QDs) can easily be grown by 'self-assembled' methods. However, the precise mechanism of 'self-assembled' is not well understood, which hampers the control over QD size, density and distribution for particular applications. Therefore, in-situ evaluation technique for observing the growth process is necessary and indispensable. STM is a good technique to observe the surface in atomic level but it prevents vibrations and material depositions. So, usually its observation is made after transporting the sample from MBE growth chamber to the STM through a gate valve, resulting that the temperature of the sample is returned to room temperature. Since the real in-situ observation cannot be done with this ordinary method, we develop "STMBE" system in which the STM is placed completely inside MBE growth chamber, and with this system, the surface structure is analyzed centering on the in-situ STM observation of the InAs QD self-assemble process on GaAs(001).
Japanese

InAs quantum dot evolution observed by in-situ scanning tunneling microscopy during molecular beam epitaxy growth
Shiro Tsukamoto
2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), IEEE, 605-608, 2008, Peer-reviwed, We have successfully investigated the self-assembly mechanism for InAs quantum dots (QDs) formed on GaAs(001) by using a unique scanning tunnelling microscope (STM) placed within the molecular beam epitaxy (MBE) growth chamber. The images elucidate the mechanism of QD nucleation, demonstrating directly that not all deposited In is initially incorporated into the lattice, hence providing a large supply of material to rapidly form QDs via islands containing tens of atoms. kinetic Monte Carlo (kMC) simulations based on first-principles calculations show that tiny alloy fluctuations, like atomistic point defects, in the InGaAs wetting layer prior to are crucial in determining nucleation sites.
International conference proceedings, English

Investigation on high catalytic activity mechanism of organopalladium catalyst on S-terminated GaAs(001)-(2x6) surface
T. Konishi; T. Tojo; T. Ishikawa; S. Tsukamoto; G. R. Bell
2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), IEEE, 629-+, 2008, Organopalladium molecules immobilized on the S-terminated GaAs(001), termed GaAs-S-{Pd}, have high catalytic activity and stability in the Heck reaction. It is thought that the presence of Ga-S bonds in the single atomic layer S-termination is essential for these catalytic properties despite the much higher thickness (similar to 100nm) of the organopalladium films. In this study, we demonstrate the retention of Ga-S bonds in ultra-thin GaAs-S-{Pd} by using reflection high-energy electron diffraction (RHEED) and scanning tunnelling microscopy (STM) to show that the organopalladium molecules are immobilized on an intact S-terminated GaAs(001)-(2x6) surface.
International conference proceedings, English

Enhancement of room temperature photoluminescence from InAs quantum dots by irradiating Mn
Seiji Nagahara; Masahiko Shimoda; Shiro Tsukamoto; Yasuhiko Arakawa
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, INST PURE APPLIED PHYSICS, 46, 33-35, L801-L803, Sep. 2007, Peer-reviwed, We performed Mn irradiation on InAs quantum dots (QDs) at low substrate temperature to introduce Mn atoms into InAs QDs efficiently without damage. In this method, Mn atoms are located near the upper part of dots, which was confirmed by atomic depth profiles measured by X-ray photoelectron spectroscopy (XPS) combined with sputtering. Moreover, temperature dependence of photouminescence (PL) showed Mn-impurity diffusing into InAs QDs reduced the internal quantum efficiency at low temperature range, and at room-temperature PL was enhanced by irradiating Mn. It is considered that p-doping suppresses hole thermalization and improve the internal quantum efficiency.
Scientific journal, English

Dynamic force microscopy study of the Ga-rich c(8x2) and As-rich c(4x4) reconstructions of the GaAs(001) surface
Shigeki Kawai; Franck Rose; Takanori Ishii; Shiro Tsukamoto; Hideki Kawakatsu
JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 102, 2, Jul. 2007, Peer-reviwed, As-rich and Ga-rich GaAs(001) surfaces were studied with frequency-modulation dynamic force microscopy. By simply changing the parameters of argon sputtering and annealing during sample preparation, surfaces reconstructed with the As-rich c(4x4) phase or the Ga-rich c(8x2) phase could be obtained. True atomic resolution of the c(8x2) reconstruction is achieved by using constant frequency shift imaging. We show that tip functionalization allows selective species imaging. The presence at the tip apex of empty Ga dangling bonds or of fully filled As dangling bonds leads to selective atomic resolution of the As or Ga sublattices of the c(8x2) reconstructed surface, respectively. Our observations support the zeta model for the c(8x2) reconstruction (but no dimers were found) and the alpha model for the c(8x2) reconstruction (individual As-As dimers were resolved by dynamic force microscopy). (c) 2007 American Institute of Physics.
Scientific journal, English

Ground state lasing at 1.34 mu m from InAs/GaAs quantum dots grown by antimony-mediated metal organic chemical vapor deposition
D. Guimard; Y. Arakawa; M. Ishida; S. Tsukamoto; M. Nishioka; Y. Nakata; H. Sudo; T. Yamamoto; M. Sugawara
APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 90, 24, Jun. 2007, Peer-reviwed, The authors report the fabrication of GaAs-based quantum dot (QD) lasers grown by metal organic chemical vapor deposition above 1.30 mu m. They fabricated a laser diode with five stacked InAs/Sb:GaAs(100) QD layers, grown by antimony-surfactant-mediated growth. Ground state lasing was obtained at 1.34 mu m, with internal quantum efficiency of 62%, internal loss of 4.5 cm(-1) and ground state modal gain above 12 cm(-1). Lasing above 1.30 mu m could be achieved because of the beneficial effects of antimony on both the coherent InAs/Sb:GaAs QD density and the suppression of the emission blueshift, usually observed for InAs/GaAs QDs during postgrowth annealing at 600 degrees C. (c) 2007 American Institute of Physics.
Scientific journal, English

Investigation on GaAs(001) surface treated by As-free high temperature surface cleaning method
N. Isomura; S. Tsukamoto; K. Iizuka; Y. Arakawa
JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 301, 26-29, Apr. 2007, We have used in in situ scanning tunneling microscopy to study GaAs(0 0 1) surface treated by As-free high temperature surface cleaning method. The temperatures ranged from 575 to 655 degrees C and an optimum temperature of 605 degrees C was found. Its surface had x6 structure parallel to [1 1 0] direction and smooth morphology by congruent evaporation. However, many pit-like structures formed lower than 600 degrees C. On the other hand, with 610 degrees C and higher, the surface became rough, forming many grooves with {1 1 1}B and {1 1 1}A facets. At 655 degrees C, the roughness was reduced but the surface easily became milky because of rapid As desorption. (c) 2006 Elsevier B.V. All rights reserved.
Scientific journal, English

High-temperature growth of Mn-irradiated InAs quantum dots
Seiji Nagahara; Shiro Tsukamoto; Yasuhiko Arakawa
JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 301, 797-800, Apr. 2007, Peer-reviwed, We fabricated Mn-irradiated InAs quantum dot (QD) structures at 500 degrees C. In the case of Mn irradiation on InAs QDs without As, the terraces were observed around dots by an atomic force microscope (AFM). It is believed that Mn atoms adhere to InAs QDs and MnAs is formed. Furthermore, we measured micro-photoluminescence from such Mn-irradiated InAs QD samples under magnetic fields. Clear Zeeman splitting was observed at 2.9 K. The estimated absolute values of the exciton g factor were 2.4-3.8. (c) 2006 Elsevier B.V. All rights reserved.
Scientific journal, English

Structure of GaSb/GaAs(001) surface using the first principles calculation
A. Ishii; K. Fujiwara; S. Tsukamoto; N. Kakuda; K. Yamaguchi; Y. Arakawa
JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 301, 880-883, Apr. 2007, Atomic structure of one monolayer covered GaSb/GaAs(0 0 1) surface is investigated using the first principles calculation with PAW potentials. The unit of the surface structure of GaSb/GaAs(0 0 1) is considered to be two type of 2 x 3 unit cells and both types can be appear because of similar total energy. The result agrees with experimental observation using in situ scanning tunneling microscope. (c) 2007 Elsevier B.V. All rights reserved.
Scientific journal, English

Effect of antimony on the density of InAs/Sb : GaAs(100) quantum dots grown by metalorganic chemical-vapor deposition
Denis Guimard; Masao Nishioka; Shiro Tsukamoto; Yasuhiko Arakawa
JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 298, 548-552, Jan. 2007, Peer-reviwed, We report the fabrication of high-density InAs quantum dots (QDs) grown on GaAs(I 0 0) substrate by metalorganic chemical-vapor deposition (MOCVD), obtained by antimony surfactant-mediated growth. We achieved InAs/Sb:GaAs QDs with dot density ranging from 2 x 10(10) cm to 2-11 X 10(11) cm(-2), with complete suppression of coalescence. We studied the dependence of the total dot density and the density of coalesced dots on the growth conditions, such as antimony irradiation time, growth temperature and growth rate. Strongly enhanced PL intensity at room temperature (RT) was obtained from InAs/Sb:GaAs QDs with density above 4 x 10(10) cm(-2), compared to reference InAs/GaAs QDs. (c) 2006 Elsevier B.V. All rights reserved.
Scientific journal, English

Ground State Lasing at 1.34 mu m from InAs Quantum Dots Grown on GaAs Substrate by Antimony-Mediated Metal Organic Chemical Vapor Deposition
D. Guimard; M. Ishida; M. Nishioka; S. Tsukamoto; N. Hatori; H. Sudo; T. Yamamoto; Y. Nakata; H. Ebe; M. Sugawara; Y. Arakawa
2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5, IEEE, 37-+, 2007, Ground state lasing above 1.30 mu m (1.34 mu m) was obtained for the first time from InAs quantum dots grown on GaAs substrate by metal organic chemical vapor deposition. (C)2007 Optical Society of America
International conference proceedings, English

Ground State Lasing at 1.34 mu m from InAs Quantum Dots Grown on GaAs Substrate by Antimony-Mediated Metal Organic Chemical Vapor Deposition
D. Guimard; M. Ishida; M. Nishioka; S. Tsukamoto; N. Hatori; H. Sudo; T. Yamamoto; Y. Nakata; H. Ebe; M. Sugawara; Y. Arakawa
2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5, IEEE, 90, 37-+, 2007, Ground state lasing above 1.30 mu m (1.34 mu m) was obtained for the first time from InAs quantum dots grown on GaAs substrate by metal organic chemical vapor deposition. (C)2007 Optical Society of America
International conference proceedings, English

InAs wetting layer and quantum dots on GaAs(001) surface studied by in situ STM placed inside MBE growth chamber and kMC simulations based on first-principles calculations
S. Tsukamoto; G. R. Bell; A. Ishii; Y. Arakawa
PHYSICS OF SEMICONDUCTORS, PTS A AND B, AMER INST PHYSICS, 893, 101-+, 2007, Dynamic images of InAs quantum dots (QDs) formation are obtained using a unique scanning tunneling microscope (STM) placed within the growth chamber. These images are interpreted with the aid of kinetic Monte Carlo (kMC) simulations of the QD nucleation process. Alloy fluctuations in the InGaAs wetting layer prior to QD formation assist in the nucleation of stable InAs islands containing tens of atoms which grow extremely rapidly to form QDs. Furthermore, not all deposited In is initially incorporated into the lattice, providing a large supply of material to rapidly form QDs at the critical thickness.
International conference proceedings, English

Ground State Lasing at 1.34 mu m from InAs Quantum Dots Grown on GaAs Substrate by Antimony-Mediated Metal Organic Chemical Vapor Deposition
D. Guimard; M. Ishida; M. Nishioka; S. Tsukamoto; N. Hatori; H. Sudo; T. Yamamoto; Y. Nakata; H. Ebe; M. Sugawara; Y. Arakawa
2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5, IEEE, 37-+, 2007, Ground state lasing above 1.30 mu m (1.34 mu m) was obtained for the first time from InAs quantum dots grown on GaAs substrate by metal organic chemical vapor deposition. (C)2007 Optical Society of America
International conference proceedings, English

Surface reconstructions on Sb-irradiated GaAs(001) formed by molecular beam epitaxy.
Naoki Kakuda; Shiro Tsukamoto; Akira Ishii; Katsutoshi Fujiwara; Toshikazu Ebisuzaki; Koichi Yamaguchi; Yasuhiko Arakawa
Microelectron. J., ELSEVIER SCI LTD, 38, 4-5, 620-624, 2007, Peer-reviwed, Reconstructed surfaces on Sb-irradiated GaAs(001) formed by molecular])earn epitaxy have been studied by in-situ scanning tunneling microscopy (STM). The reflection high-energy electron diffraction patterns showed (2 x 3) [or weak (4 x 3)] structure. The step density was about five times higher than that of GaAs(001)-c(4 x 4) surface. It was found that there were swinging dimer rows along to the [110] direction, which seemed not to consist of a specified reconstruction. We proposed two (2 x 3)-structure models for these swinging dimers. By first-principles calculation, we found that the proposed models were stable and with energy difference was 0.17 eV, indicating the coexistence of the two structures. Moreover, we proposed three (4 x 3) reconstruction models based on these (2 x 3) models. The electron counting rule was applied for these models, indicating that there was an excessive amount of electrons. By two bias-alternative STM images, it was found that the many spots appear only in empty-state. These might be segregated Ga or Sb cluster and strongly relate to the excessive amount of electrons. (c) 2007 Elsevier Ltd. All rights reserved.
Scientific journal, English

The perspective on the new nanotechnology. The environmental harmony type organometallic catalyst using the nanotechnology.
有澤光弘; 塚本史郎; 下田正彦; 荒川泰彦; 周東智; 西田篤司
ケミカルエンジニヤリング, 51, 12, 945-951, 01 Dec. 2006
Japanese

ナノテクノロジーを利用した環境調和型有機金属触媒 (特集 新しいナノテクノロジーの展望)
有澤 光弘; 塚本 史郎; 下田 正彦
ケミカルエンジニヤリング, 化学工業社, 51, 12, 945-951, Dec. 2006
Japanese

Heteroepitaxial growth of InAs on GaAS(001) by in situ STM located inside MBE growth chamber
S. Tsukamoto; G. R. Bell; Y. Arakawa
MICROELECTRONICS JOURNAL, ELSEVIER SCI LTD, 37, 12, 1498-1504, Dec. 2006, The growth of InAs on GaAs(001) is of great interest primarily due to the self-assembly of arrays of quantum dots (QDs) with excellent opto-electronic properties. However, a basic understanding of their spontaneous formation is lacking. Advanced experimental methods are required to probe these nanostructures dynamically in order to elucidate their growth mechanism. Scanning tunneling microscopy (STM) has been successfully applied to many GaAs-based materials grown by molecular beam epitaxy (MBE). Typical STM-MBE experiments involve quenching the sample and transferring it to a remote STM chamber under arsenic-free ultra-high vacuum. In the case of GaAs-based materials grown at substrate temperatures of 400-600 degrees C, operating the STM at room temperature ensures that the surface is essentially static on the time scale of STM imaging. To attempt dynamic experiments requires a system in which STM and MBE are incorporated into one unit in order to scan in situ during growth. Here, we discuss in situ STM results from just such a system, covering both QDs and the dynamics of the wetting layer. (c) 2006 Elsevier Ltd. All rights reserved.
Scientific journal, English

High density InAs/GaAs quantum dots with enhanced photoluminescence intensity using antimony surfactant-mediated metal organic chemical vapor deposition
Denis Guimard; Masao Nishioka; Shiro Tsukamoto; Yasuhiko Arakawa
APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 89, 18, Oct. 2006, Peer-reviwed, The antimony surfactant-mediated growth of InAs/GaAs quantum dots (QDs) by metal organic chemical vapor deposition was investigated. The authors show that the growth of InAs QDs on Sb:GaAs(100) can result in both a strong increase of the dot density, up to 10(11) cm(-2), and the suppression of coalescence. They achieved InAs/Sb:GaAs QDs with density above 4x10(10) cm(-2), ground-state emission above 1.30 mu m, and enhanced photoluminescence intensity at room temperature compared to that of InAs/GaAs QDs. Remarkably, InAs/Sb:GaAs QDs do not exhibit an emission blueshift under annealing at temperatures as high as 630 degrees C, contrary to InAs/GaAs QDs. (c) 2006 American Institute of Physics.
Scientific journal, English

In situ scanning tunneling microscope observation of InAs wetting layer formation on GaAs(001) during molecular beam epitaxy growth at 500 degrees C
Tsuyoshi Honma; Shiro Tsukamoto; Yasuhiko Arakawa
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, JAPAN SOC APPLIED PHYSICS, 45, 29-32, L777-L779, Aug. 2006, Peer-reviwed, The evolution of InAs wetting layer growth on GaAs(001) was observed at 500 degrees C using scanning tunneling microscope within a molecular beam epitaxy growth chamber. In a series of island nucleation and step flow growth of InAs are clearly observed in the same region with each snapshot. The step density was increased with increasing of InAs growth due to island nucleation and recovered within one monolayer (ML) growth with coalescent with two-dimensional islands. Actual step flow growth was stopped beyond I ML and then InAs quantum dots QDs) were appeared at 1.72 ML. It is found that the excess amount of 3.9 x 10(14) cm(-2) In adatom independent from chemical bonding might be participate the formation of QDs induced with drastically around 1.7 ML.
Scientific journal, English

1.55 mu m emission from InAs/GaAs quantum dots grown by metal organic chemical vapor deposition via antimony incorporation
Denis Guimard; Shiro Tsukamoto; Masao Nishioka; Yasuhiko Arakawa
APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 89, 8, Aug. 2006, Peer-reviwed, The authors report a fabrication technique for redshifting the emission wavelength of InAs quantum dots (QDs) grown on GaAs substrate by metal organic chemical vapor deposition. By introducing an antimony irradiation step during the InAs QD growth, the authors have achieved ground-state emission at 1.55 mu m (and beyond) from InAs/GaAs QDs capped by an In0.24Ga0.76As strain-reducing layer (SRL) at room temperature (RT). Photoluminescence intensity is strongly enhanced (x100) at RT compared to Sb-free QDs capped by a higher In-content SRL in which ground-state emission saturates at wavelengths shorter than 1.51 mu m. (c) 2006 American Institute of Physics.
Scientific journal, English

Development of a method for preparing a highly reactive and stable, recyclable and environmentally benign organopalladium catalyst supported on sulfur-terminated gallium arsenide(001): A three-component catalyst, {Pd}-S-GaAs(001), and its properties
Mitsuhiro Arisawa; Masahiro Hamada; Ikuko Takamiya; Masahiko Shimoda; Shiro Tsukamoto; Yasuhiko Arakawa; Atsushi Nishida
ADVANCED SYNTHESIS & CATALYSIS, WILEY-V C H VERLAG GMBH, 348, 9, 1063-1070, Jun. 2006, Peer-reviwed, We have developed a method for preparing a recyclable and environmentally benign organo-palladium catalyst for the Heck reaction supported on sulfur-terminated gallium arsenide(001). This three-component catalyst, {Pd}-S-GaAs(001), exhibited high stability and activity, furthermore. it tolerated reuse in 10 runs of the Heck reaction (average yield, 97%) under aerobic conditions. The sulfur layer was very important to stabilize this catalyst. Only trace amounts of Pd were leached from this catalyst to the reaction mixture, as measured by ICP-mass. The valence of immobilized Pd was zero by XPS spectrometry.
Scientific journal, English

Erratum: Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber (Small (2006) 2 (386-389))
S. Tsukamoto; T. Honma; G. R. Bell; A. Ishii; Y. Arakawa
Small, 2, 5, 587, May 2006, Peer-reviwed
Scientific journal, English

Highly reactive organopalladium catalyst formed on sulfur-terminated GaAs(001)-(2 x 6) surface
Ikuko Takamiya; Shiro Tsukamoto; Masahiko Shimoda; Mitsuhiro Arisawa; Atsushi Nishida; Yasuhiko Arakawa
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, JAPAN SOC APPLIED PHYSICS, 45, 17-19, L475-L477, May 2006, Peer-reviwed, Highly reactive organopalladium, catalysts have been successfully developed on a sulfur-terminated (S-terminated) GaAs(001) substrate, which has a highly uniform (2 x 6) reconstructed surface formed by molecular-beam epitaxy. This new material catalyzed the coupling reaction of iodobenzene and methyl acrylate and could be used repeatedly at least ten times to give good to excellent yields in the Heck reaction. The immobilization of organopalladium in acetonitrile at 100 degrees C followed by treatment at elevated temperature in acetonitrile is essential for producing an active and stable catalyst on S-terminated GaAs(001). Moreover, we have shown that the amount of S-Ga bonds is responsible for stabilizing the activity of the catalyst. In addition, we examined the physical character of organopalladium on a surface before and after the Heck reaction by X-ray photoelectron spectroscopy (XPS).
Scientific journal, English

Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber
S Tsukamoto; T Honma; GR Bell; A Ishii; Y Arakawa
SMALL, WILEY-V C H VERLAG GMBH, 2, 3, 386-389, Mar. 2006, Peer-reviwed, True
Scientific journal, English

Emission at 1.55 mu m from InAs/GaAS quantum dots grown by metal organic chemical vapor deposition via antimony incorporation
Denis Guimard; Shiro Tsukamoto; Masao Nishioka; Yasuhiko Arakawa
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 11, WILEY-V C H VERLAG GMBH, 3, 11, 4023-+, 2006, Peer-reviwed, By introducing antimony during the growth of InAs/GaAs quantum dots (QDs) by metalorganic chemical vapor deposition, we have achieved ground-state emission at 1.55 mu m (and beyond) from InAs/GaAs QDs capped by an In0.24Ga0.76As strain-reducing layer (SRL) at room temperature (RT). We show that antimony irradiation results in the formation of QD sub-ensembles. Photoluminescence intensity is strongly enhanced (x 100) at RT compared to Sb-free QDs capped by higher In-content SRL in which ground-state emission saturates at wavelengths shorter than 1.51 mu m. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
International conference proceedings, English

Conformation and local environment dependent conductance of DNA molecules
MS Xu; RG Endres; S Tsukamoto; M Kitamura; S Ishida; Y Arakawa
SMALL, WILEY-V C H VERLAG GMBH, 1, 12, 1168-1172, Dec. 2005, DNA conformation and local molecular environment dependant conductance of thiolated 16-base-pair, double stranded DNA on Au(111), was studied using ultrahigh-vacuum scanning tunneling microscopy (UHV/STM) and spectroscopy (STS). The increased conductance was found to occur due to flattened DNA molecules with individual aromatic base pairs mediating the current between the STM tip and Au surface. Isolated molecules were found to exhibit larger band gaps but had higher conductance at voltages above the band-gap threshold. The results showed a conformation-dependent effect on the conductance of DNA molecules. Conformational changes were found to occur due to a re-orientation of the DNA molecules with respect to the substrate due to the applied field. The DNA environment had a significant effect on the density of states and tunneling current, while the electronic properties of DNA were found sensitive to the experimental conditions.
Scientific journal, English

Conductance of single thiolated poly(GC)-poly(GC) DNA molecules
MS Xu; S Tsukamoto; S Ishida; M Kitamura; Y Arakawa; RG Endres; M Shimoda
APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 87, 8, Aug. 2005, We use ultrahigh vacuum scanning tunneling microscopy/spectroscopy (UHV-STM/STS) to investigate the electronic properties of single thiolated 12-base-pair poly(GC)-poly(GC) DNA molecules on a Au(111) surface at room temperature. Reproducible current-voltage curves of the DNA are obtained at variable sample-tip separations. The normalized conductance, which can be interpreted as the density of states, shows a well-defined wide band gap. UHV-STM/STS opens up a novel technique to probe the electronic properties of biomolecules on surfaces at the atomic level. (c) 2005 American Institute of Physics.
Scientific journal, English

Advances and prospects of fabrication of low-dimensional quantum structures and device applications : Mainly focusing on quantum dots
ARAKAWA Yasuhiko; TSUKAMOTO Shiro
應用物理, 応用物理学会, 74, 3, 293-306, 10 Mar. 2005
Japanese

Highly uniform self-assembled InAs/GaAs quantum dots emitting at 1.3 mu m by metalorganic chemical vapor deposition
T Yang; J Tatebayashi; S Tsukamoto; Y Arakawa
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, ELSEVIER SCIENCE BV, 26, 1-4, 77-80, Feb. 2005, We report highly uniform self-assembled InAs quantum dots (QDs) emitting at 1.3 mum, grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition. By optimizing the InAs growth rate and capping the QDs with GaAs using triethylgallium as a gallium source, we demonstrate a narrow photoluminescence (PL) inhomogeneous linewidth ( < 17 meV at 7 K) from QDs with a density of 1.7 x 10(10) cm(-2). Furthermore, we show by temperature-dependent PL measurements that the QDs exhibit almost no dependence of linewidth on temperature due to their high uniformity. (C) 2004 Elsevier B.V. All rights reserved.
Scientific journal, English

Enhanced photoluminescence intensity in modulation doped p-InAs quantum dots grown by molecular beam epitaxy
N Kumagai; K Watanabe; S Tsukamoto; Y Arakawa
2005 International Conference on Indium Phosphide and Related Materials, IEEE, 2005, 537-539, 2005, The photoluminescence (PL) intensity of InAs quantum dots (QDs), of which wavelength is 1.3 mu m at room temperature, has been significantly enhanced by introducing p-type modulation doping and optimizing of the spacer thickness.
International conference proceedings, English

Proposal of selective growth technique using periodic strain field caused by misfit dislocations
N Oyama; A Ohtake; S Tsukamoto; N Koguchi; T Ohno
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, INST PURE APPLIED PHYSICS, 43, 11A, L1422-L1424, Nov. 2004, The selective growth technique using the strain field caused by misfit dislocations was proposed, and the growth of Ga droplets on an InAs/GaAs(110) system was demonstrated. It was found that the Ga. droplets nucleate only on strain-relaxed InAs layers by generating misfit dislocations. In addition, nucleation sites on the InAs layers are localized on a region just above the dislocation line. It was clarified that the frequency of nucleation increases by about 4 times on the dislocation line.
Scientific journal, English

Improvement of the uniformity of self-assembled InAs quantum dots grown on InGaAs/GaAs by low-pressure metalorganic chemical vapor deposition
T Yang; S Tsukamoto; J Tatebayashi; M Nishioka; Y Arakawa
APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 85, 14, 2753-2755, Oct. 2004, We report an approach to improve the uniformity of self-assembled InAs quantum dots (QDs) grown on a strained In0.12Ga0.88As buffer layer on GaAs substrates by low-pressure metalorganic chemical vapor deposition. By inserting a thin GaAs layer between the InAs QD layer and the In0.12Ga0.88As buffer layer and examining its thickness effect, we demonstrate that the photoluminescence (PL) inhomogeneous linewidth from the QDs can be improved by increasing the thickness of the thin GaAs layer. The PL inhomogeneous linewidth is significantly decreased from about 70 to 20 meV at 7 K as the thickness is increased from 0 to 2 nm. This significant improvement of the PL inhomogeneous linewidth is due to the fact that the QDs change from a bimodal distribution to a monomodal distribution consisting only of large QDs as a result of the inserted thin GaAs layer. (C) 2004 American Institute of Physics.
Scientific journal, English

Structural analysis by reflectance anisotropy spectroscopy: As and Sb on GaAs(110)
O Pulci; K Fleischer; M Pristovsek; S Tsukamoto; R Del Sole; W Richter
JOURNAL OF PHYSICS-CONDENSED MATTER, IOP PUBLISHING LTD, 16, 39, S4367-S4374, Oct. 2004, We present calculated and measured reflectance anisotropy spectra (RAS) in the energy range from 1 to 6 eV of cleaved GaAs(110) surfaces covered with one monolayer of As and Sb in a (1 x 1) pattern. The spectral range and the accuracy of the data were improved and correlated for the first time with ab initio calculations of RAS spectra for the ECLS (epitaxial continued layer structure) and EOTS (epitaxial on top structure) surface models. The theoretical spectra for the two models completely differ and rule out the EOTS for both adsorbates. For Sb/GaAs(110) this finding agrees with the previous experimental and theoretical results reported on the structure. For As on GaAs(110) the ECLS structure was also suggested, but so far no direct proof for this model has been given. In this paper we show how RAS, thanks to its sensitivity to details of the surface structure and ab initio theoretical description, demonstrates its potential to conclusively determine surface structures.
Scientific journal, English

Novel palladium catalyst supported on GaAs(001) passivated by ammonium sulfide
Ikuko Takamiya; Shiro Tsukamoto; Masahiko Shimoda; Naoki Miyashita; Mitsuhiro Arisawa; Yasuhiko Arakawa; Atsushi Nishida
Chemistry Letters, 33, 9, 1208-1209, 05 Sep. 2004, A more reactive palladium catalyst than homogeneous Pd(PPh 3)4 catalyst for the Heck reaction supported on a sulfur-terminated GaAs(001) plate was developed. Sulfur termination using (NH4)2Sx at 60°C and Pd absorption in acetonitrile at 100°C is essential for the preparation of an active and stable catalyst. The catalyst could be reused in this reaction up to ten times.
Scientific journal

In situ study of low-temperature growth and Mn, Si, Sn doping of GaAs (001) in molecular beam epitaxy
M Pristovsek; S Tsukamoto
JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 265, 3-4, 425-433, May 2004, Low-temperature growth of GaAs was investigated using in situ reflectance anisotropy spectroscopy (RAS) for the first time. RAS indicates that the surface during growth is mostly unreconstructed with many dangling bonds. Above a critical thickness anisotropic roughening occurs. When doped with Mn, Si, and Sri the RAS signal showed only contributions due to surface band bending from doping. At very high concentrations the spectra change, indicating a transition from doping to alloying. Alloying occurred above 2-3% Mn or for more than 1% Sn incorporation. (C) 2004 Elsevier B.V. All rights reserved.
Scientific journal, English

Narrow photoluminescence linewidth (< 17 meV) from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metalorganic chemical vapor deposition
T Yang; J Tatebayashi; S Tsukamoto; M Nishioka; Y Arakawa
APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 84, 15, 2817-2819, Apr. 2004, We report highly uniform self-assembled InAs quantum dots (QDs) emitting at 1.3 mum, grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition. By optimizing the InAs growth rate and capping the QDs with GaAs using triethylgallium as a gallium source, we have achieved a narrow photoluminescence (PL) inhomogeneous linewidth of 16.5 meV (at 7 K) from QDs with a density of 1.7x10(10) cm(-2). Furthermore, we show by temperature-dependent PL measurements that the QDs exhibit almost no dependence of linewidth on temperature due to their high uniformity. (C) 2004 American Institute of Physics.
Scientific journal, English

In-situ scanning tunneling microscopy observation of InAs quantum dots on GaAs(001) during molecular beam epitaxy growth
S Tsukamoto; GR Bell; Y Arakawa
2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings, IEEE, 68-73, 2004, Scanning tunneling microscopy (STM) has proved to be an invaluable tool for probing epitaxial growth phenomena in general, and has been successfully applied to many GaAs-based materials grown by molecular beam epitaxy (MBE). Typical STM-MBE experiments involve quenching the sample and transferring it to a remote STM chamber under arsenic-free ultra-high vacuum (UHV). In the case of GaAs-based materials grown at substrate temperatures of 400-600 degrees C, operating the STM at room temperature ensures that the surface is essentially static on the time scale of STM imaging. To attempt dynamic experiments requires a system in which STM and MBE were incorporated into one unit rather than in separate chambers in order to scan in situ during growth. In this paper, we discussed the observation on the heteroepitaxial growth of InAs on GaAs(001) by this system along with prospects for key in situ STM experiments.
International conference proceedings, English

Controlling the uniformity of self-assembled InAs/GaAs quantum dots by a combined GaAs/InGaAs strained buffer layer
T Yang; S Tsukamoto; J Tatebayashi; M Nishioka; Y Arakawa
2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings, IEEE, 81-84, 2004, We report optical and structural properties of self-assembled InAs quantum dots (QDs) grown on a combined GaAs/In0.12Ga0.88As strained buffer layer on GaAs substrates by low-pressure metalorganic chemical vapor deposition. The thickness of GaAs in the combined GaAs/In0.12Ga0.88As strained buffer layer is varied (from 0 to 5 nm) to examine its effect on the optical and structural properties of the self-assembled InAs QDs. We demonstrate that the uniformity of the QDs can be significantly improved with increasing the thickness of GaAs, and highly uniform InAs QDs with a narrow inhomogeneous linewidth of about 20 meV can be achieved when the thickness of GaAs is increased to 2 nm.
International conference proceedings, English

Gallium-rich reconstructions on GaAs(001)
M Pristovsek; S Tsukamoto; A Ohtake; N Koguchi; BG Orr; WG Schmidt; J Bernholc
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, WILEY-V C H VERLAG GMBH, 240, 1, 91-98, Nov. 2003, Ga-rich reconstructions on GaAs(001) surfaces were prepared by annealing and Ga dosing of Molecular Beam Epitaxy grown samples and analyzed in-situ by Reflectance Anisotropy Spectroscopy and Reflection High-Energy Electron Diffraction. Annealing or dosing gallium above about 900 K invariably results in a (4 x 2)/c(8 x 2) reconstruction. Lowering the temperature or annealing below 800 K results in a (2 x 6)/(3 x 6) reconstruction. By dosing the (2 x 6)/(3 x 6) reconstruction with more than 0.2 monolayer of gallium, it transforms into a (4 x 6) reconstruction. The observed translational symmetries and measured RAS spectra are compared with results of first-principles calculations. None of the (2 x 6) structures proposed in the literature is energetically stable. The RAS spectrum calculated for the (4 x 2) model resembles reasonably the data measured for the (4 x 2) surface. The RAS spectra calculated for (2 x 6) symmetries indicate that mixed Ga-As dimers likely are a structural element of the corresponding surface reconstructions. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Scientific journal, English

In situ scanning tunneling microscopy of InAs quantum dots on GaAs(001) during molecular beam epitaxial growth
GR Bell; M Pristovsek; S Tsukamoto; BG Orr; Y Arakawa; N Koguchi
SURFACE SCIENCE, ELSEVIER SCIENCE BV, 544, 2-3, 234-240, Oct. 2003, Arrays of InAs quantum dots (QDs) have been studied using in situ scanning tunneling microscopy (STM) during their growth by molecular beam epitaxy on GaAs(001). At a substrate temperature of 400 degreesC under As-4 flux, both the QDs and the underlying step-terrace structure of the wetting layer (WL) are found to be static, with neither step-flow nor QD ripening observed. Higher resolution images of the mature WL show slightly different [110] periodicities to those observed in quenched STM studies. (C) 2003 Elsevier B.V. All rights reserved.
Scientific journal, English

Structure of Ga-stabilized GaAs(001) surfaces at high temperatures
A Ohtake; S Tsukamoto; M Pristovsek; N Koguchi
APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, 212, 146-150, May 2003, We have studied the atomic structure of the Ga-stabilized GaAs(001)-c(8 x 2) surface using rocking-curve analysis of reflection high-energy electron diffraction (RHEED). The c(8 x 2) surface is stable only at temperatures higher than 600 degreesC, but changes to the (2 x 6)/(3 x 6) structure at lower temperatures. The atomic structure of the c(8 x 2) surface at high temperatures is basically the same as that determined by the analysis at room temperature. We propose that the surface atomic configurations are locally fluctuating at high temperatures. (C) 2003 Elsevier Science B.V. All rights reserved.
Scientific journal, English

Ga-rich GaAs(001) surfaces observed by STM during high-temperature annealing in MBE
S Tsukamoto; M Pristovsek; A Ohtake; BG Orr; GR Bell; T Ohno; N Koguchi
JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 251, 1-4, 46-50, Apr. 2003, Ga-rich GaAs (0 0 1) surfaces are successfully observed by scanning tunneling microscopy (STM) during high-temperature annealing in molecular beam epitaxy. With a substrate temperature of 550degreesC, reflection high-energy diffraction patterns and reflectance anisotropy spectra confirm a (4 x 2) Ga-stabilized surface. STM images clearly show alteration of the surface reconstructions while scanning. It is postulated that detaching and attaching of Ga adatoms may be the cause of this surface dynamics. For these conditions it is determined that zeta(4 x 4), zeta2(4 x 4) and zeta(4 x 6) reconstructions co-exist on the surface. The zeta2(4 x 4) reconstruction contains a Ga tetramer cluster. (C) 2002 Elsevier Science B.V. All rights reserved.
Scientific journal, English

Influence of the reconstruction of GaAs (001) on the electro-optical bulk properties
M Pristovsek; S Tsukamoto; B Han; JT Zettler; W Richter
JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 248, 254-258, Feb. 2003, We investigated the doping dependence of the reflectance anisotropy signal on different GaAs (0 0 1) reconstructions. The doping dependent signal amplitude at the E-1 transition is found to be proportional to the electrical field integrated over the penetration depth of light. However, the surface reconstruction strongly modifies amplitude and spectral shape of this signal. (C) 2002 Elsevier Science B.V. All rights reserved.
Scientific journal, English

Passivation and reconstruction-dependent electron accumulation at sulphur treated InAs(001) surfaces
MJ Lowe; TD Veal; CF McConville; GR Bell; S Tsukamoto; N Koguchi
SURFACE SCIENCE, ELSEVIER SCIENCE BV, 523, 1-2, 179-188, Jan. 2003, The effects of in situ sulphur passivation on the electronic properties of n-type InAs(0 0 1) have been studied using X-ray photoemission spectroscopy and high resolution electron energy loss spectroscopy coupled with space-charge layer calculations. Surfaces passivated by sulphur dosing followed by arsenic capping were annealed in vacuum to progressively remove the protective layers. For disordered surfaces with a sulphur coverage of almost 2 monolayers (ML), complex surface plasmon modes were observed due to strong electron accumulation at the surface, with downward band bending around 600 meV. For (2 x 1) reconstructed surfaces (sulphur coverage <1 ML), the band bending dropped to 325 meV. A 375 degreesC anneal was sufficient to remove all sulphur and regain a clean (4 x 1) indium-terminated surface with 200 meV downward band bending. We discuss the reconstruction-dependent surface accumulation and some aspects of 'electrical passivation' of surfaces. (C) 2002 Elsevier Science B.V. All rights reserved.
Scientific journal, English

Novel organopalladium material formed on a sulfur-terminated GaAs(001) surface
Mitsuhiro Arisawa; Shiro Tsukamoto; Masahiko Shimoda; Markus Pristovsek; Atsushi Nishida
Japanese Journal of Applied Physics, Part 2: Letters, 41, 11 A, 01 Nov. 2002, By merging the disciplines of organometallic chemistry and surface nanotechnology, we have studied a novel material that combines tetrakistriphenylphosphine palladium (Pd(PPh3)4), a useful organometallic catalyst for producing pharmaceutical substances, with a sulfur-terminated GaAs(001) substrate grown by molecular beam epitaxy. This organopalladium catalyst is reusable in the Heck reaction and Suzuki coupling.

New structure model for the GaAs(001)-c(4x4) surface
A Ohtake; J Nakamura; S Tsukamoto; N Koguchi; A Natori
PHYSICAL REVIEW LETTERS, AMERICAN PHYSICAL SOC, 89, 20, 2061021-2061024, Nov. 2002, The surface structure of the As-stabilized GaAs(001)-c(4x4) surface has been studied. We show that the seemingly established three As-dimer model is incompatible with experimental data and propose here a new structure model which has three Ga-As dimers per c(4x4) unit cell. This mixed dimer model, confirmed by the rocking-curve analysis of reflection high-energy electron diffraction and first-principles calculations, resolves disagreements in the interpretation of several previous experiments. A good agreement between the observed scanning tunneling microscopy image and the simulated one further confirms the newly proposed model.
Scientific journal, English

New structure model for the GaAs(001)-c(4x4) surface
A Ohtake; J Nakamura; S Tsukamoto; N Koguchi; A Natori
PHYSICAL REVIEW LETTERS, AMERICAN PHYSICAL SOC, 89, 20, 206102-206102, Nov. 2002, Peer-reviwed, True, The surface structure of the As-stabilized GaAs(001)-c(4x4) surface has been studied. We show that the seemingly established three As-dimer model is incompatible with experimental data and propose here a new structure model which has three Ga-As dimers per c(4x4) unit cell. This mixed dimer model, confirmed by the rocking-curve analysis of reflection high-energy electron diffraction and first-principles calculations, resolves disagreements in the interpretation of several previous experiments. A good agreement between the observed scanning tunneling microscopy image and the simulated one further confirms the newly proposed model.
Scientific journal, English

GaAs(001)表面のGaナノクラスター
塚本 史郎; 大竹 晃浩; Markus Pristovsek
ナノ学会会報, ナノ学会, 1, 1, 33-42, Oct. 2002
Japanese

Structure analysis of the Ga-stabilized GaAs(001)-c(8 × 2) surface at high temperatures
Akihiro Ohtake; Shiro Tsukamoto; Markus Pristovsek; Nobuyuki Koguchi; Masashi Ozeki
Physical Review B - Condensed Matter and Materials Physics, 65, 2333111-2333114, 15 Jun. 2002, The structure of the Ga-stabilized GaAs(001)-c(8 × 2) surface has been studied using rocking-curve analysis of reflection high-energy electron diffraction (RHEED). The c (8 × 2) structure emerges at temperatures higher, than 600 °C, but is unstable with respect to the change to the (2 × 6)/(3 × 6) structure at lower temperatures. Our RHEED rocking-curve analysis at high temperatures revealed that the c(8 × 2) surface has the structure which is basically the same as that recently proposed by Kumpf et al. [Phys. Rev. Lett. 86, 3586 (2001)]. We found that the surface atomic configurations are locally fluctuated at high temperatures without disturbing the c(8 × 2) periodicity.

Structure analysis of the Ga-stabilized GaAs(001)-c(8x2) surface at high temperatures
A Ohtake; S Tsukamoto; M Pristovsek; N Koguchi; M Ozeki
PHYSICAL REVIEW B, AMERICAN PHYSICAL SOC, 65, 23, Jun. 2002, The structure of the Ga-stabilized GaAs(001)-c(8x2) surface has been studied using rocking-curve analysis of reflection high-energy electron diffraction (RHEED). The c(8x2) structure emerges at temperatures higher than 600 degreesC, but is unstable with respect to the change to the (2x6)/(3x6) structure at lower temperatures. Our RHEED rocking-curve analysis at high temperatures revealed that the c(8x2) surface has the structure which is basically the same as that recently proposed by Kumpf [Phys. Rev. Lett. 86, 3586 (2001)]. We found that the surface atomic configurations are locally fluctuated at high temperatures without disturbing the c(8x2) periodicity.
English

Extreme band bending at MBE-grown InAs(0 0 1) surfaces induced by in situ sulphur passivation
M. J. Lowe; T. D. Veal; C. F. McConville; G. R. Bell; S. Tsukamoto; N. Koguchi
Journal of Crystal Growth, 237-239, 1, 196-200, 2002, The passivation of InAs(0 0 1) surfaces by exposure to sulphur in ultra-high vacuum (UHV), followed by capping with amorphous arsenic, has been studied by high resolution electron energy loss spectroscopy (HREELS), X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED). Samples grown and passivated at NIMS were transferred to Warwick for analysis, through air and without special precautions. Well ordered and clean InAs surfaces were recovered simply by thermal annealing in UHV. A series of reconstructions were investigated using LEED and XPS by increasing the anneal temperature: a disordered S-rich (1×1), ordered S-terminated (2×1) and finally a S-free (4×2)/c(8×2) In-terminated surface. The evolution of the HREEL spectra with annealing was also measured, and observations of the surface plasmon mode indicated a very strong surface electron accumulation layer. The downward band bending was largest for the S-rich surfaces with the surface Fermi level as high as 600meV above the conduction band minimum. © 2002 Elsevier Science B.V. All rights reserved.
Scientific journal, English

Dynamics of Ga clusters on GaAs(001) surface
Shiro Tsukamoto; Nobuyuki Koguchi
Materials Research Society Symposium - Proceedings, 648, 01 Dec. 2001, Dynamics of Ga clusters and GaAs epitaxial growth on a GaAs (001) surface were successfully observed by a system in which scanning tunneling microscopy (STM) and molecular beam epitaxy (MBE) were incorporated into one unit rather than in separate chambers. With the substrate temperature of 528 °C, reflection high-energy diffraction (RHEED) patterns showed a (4×6) Ga-stabilized surface reconstruction and dynamics of steps and islands were clearly observed. The detaching and attaching of small Ga clusters might cause the change of steps and islands. It seems that the small Ga clusters migrated with the diameter of about 0.8 to 1.2 nm and around the steps and islands. These clusters could be observed only when they were detached from or attached to the steps and islands. Moreover, even under the substrate temperature of 440 °C and the As4 partial pressure of 2×10-6 torr, STM images were clearly observed. After 0.1 ML Ga was additionally supplied to the sample by migration enhanced epitaxy mode, step flow growth occurred, resulting in an additional GaAs layer grown on the B-step side. Moreover, the c(4×4) As-stabilized surface reconstruction was moderate. It seems that there is an equilibrium additional layer of As amorphous adatoms on the c(4×4) surface reconstructions.

Photoluminescence properties of uniform InGaAs quantum dots fabricated by heterogeneous droplet epitaxy
Takaaki Mano; Shiro Tsukamoto; Nobuyuki Koguchi
Materials Research Society Symposium - Proceedings, 642, 01 Dec. 2001, We have successfully observed the optical anisotropy of InGaAs quantum dots (QDs) fabricated by Heterogeneous Droplet Epitaxy. Very large degree of polarization was observed in the lateral direction. The intensity polarized along the [1-10] direction is 1.9 times stronger than that along the [110] direction. Strong photoluminescence in the [001] direction was observed by the cross-sectional measurements. These results strongly suggest the occurrence of the mixing effect of light hole-like band and heavy hole-like band due to the high aspect ratio, 0.37, of our QDs.

Effects of post-annealing on photoluminescence properties of GaAs quantum dots grown by droplet epitaxy
Katsuyuki Watanabe; Shiro Tsukamoto; Yasutaka Imanaka; Tadashi Takamasu; Giyu Kido; Yoshihiko Gotoh; Nobuyuki Koguchi; Masahiro Yoshita; Shinichi Watanabe; Hidefumi Akiyama
Materials Research Society Symposium - Proceedings, 642, 01 Dec. 2001, We investigated post-annealing effects of self-organized GaAs/AlGaAs quantum dots (QDs) structures grown by droplet epitaxy using a rapid irradiation process of high As flux. Photoluminescence intensity of the QDs increased drastically with increase of post-annealing temperature. Two-dimensional confinement effect of excitons in the plane perpendicular to substrate surface was confirmed by magneto-PL measurements. Additionally, by micro-PL measurements, a broad PL peak of the QDs was resolved to many sharp lines, which might originate in zero-dimensional excitons in three-dimensional confinement potentials. It was confirmed that the droplet epitaxy with the post-annealing process promised the fabrication of high-quality GaAs QD structures.

In-situ determination of the carrier concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy
M Pristovsek; S Tsukamoto; N Koguchi; B Han; K Haberland; JT Zettler; W Richter; M Zorn; M Weyers
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, WILEY-V C H VERLAG GMBH, 188, 4, 1423-1429, Dec. 2001, We demonstrate the use of Reflectance Anisotropy Spectroscopy (RAS) to determine the carrier concentration in GaAs of the topmost layers (approximate to20 nm) in-situ during layer growth. The doping contributes to three features in the RAS spectra: an oscillation at E-1/E-1 + Delta(1), an oscillation at W-0'/E-0' +Delta(0)' and an offset of the baseline of the whole spectrum. Using the empirical calibration in 0 0 this paper, carrier concentrations above approximate to 10(17) cm(-3) can be easily measured by RAS for a given temperature, dopant and reconstruction.
Scientific journal, English

Indium segregation in the fabrication of InGaAs concave disks by heterogeneous droplet epitaxy
T Mano; S Tsukamoto; N Koguchi; H Fujioka; M Oshima
JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 227, 1069-1072, Jul. 2001, We have studied the effects of As-4 flux intensity during crystallization process and sample temperature during annealing process on the structural and optical properties of InGaAs (quantum dots) QDs fabricated bp heterogeneous droplet epitaxy method. The QDs formation mechanism including In segregation and InAs-GaAs intermixing was investigated. We found the very wide optimum growth conditions, such as photoluminescence peak energy is constant, intensity is maximum value and full-width at half-maximum is minimum value. (C) 2001 Elsevier Science B.V, All rights reserved.
Scientific journal, English

Photoluminescence studies of GaAs quantum dots grown by droplet epitaxy
K Watanabe; S Tsukamoto; Y Gotoh; N Koguchi
JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 227, 1073-1077, Jul. 2001, We have investigated post-annealing effects of photoluminescence (PL) properties in GaAs/AlGaAs QDs fabricated by modified droplet epitaxy. The annealing temperatures were changed between 520 degreesC and 760 degreesC. The PL intensity of QDs: increased drastically with the increase of annealing temperature. The PL intensity of QDs after the annealing at 760 degreesC was enhanced by two orders of magnitude as compared to that of before post-annealing. This sample showed a distinct PL peak even at the room temperature. With the increase of annealing temperatures, the peak energy shifted from 1.646 to 1.749 eV, continuously. These effects may be caused by improving the crystallinity of QDs systems and the size reduction and:or changing the composition of QDs by the post-annealing. (C) 2001 Elsevier Science B,V. All rights reserved.
Scientific journal, English

Transmission electron microscope study of InGaAs quantum dots fabricated by SPEED method
T Mano; S Tsukamoto; N Koguchi; H Fujioka; M Oshima; CD Lee; JY Leem; HJ Lee; SK Noh
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, KOREAN PHYSICAL SOC, 38, 4, 401-404, Apr. 2001, The structure of InGaAs: quantum dots (QDs) fabricated by; separated-phase enhanced epitaxy with droplets (SPEED) method was investigated by means of cross-sectional transmission electron microscopy. (TEM). No wetting layer was observed between the QDs, which indicate that the SPEED method was not based on the S-K mode. It was found that the lattice spacing of the uncapped QDs was elongated in the vertical direction rather than in the lateral direction because the QDs were buried in the flat surface of the specimen with their top surfaces exposed to the air. After tilt growth of capping layer, the lattice spacing in the vertical direction shrank due to the compressive strain of a GaAs capping layer, resulting in the formation of highly strained QDs. This result is consistent with our previous speculation deduced from photoluminescence measurements.
Scientific journal, English

Dynamics of Ga Adatoms on GaAs(001) Surface Observed by in-situ Scanning Tunneling Microscopy
TSUKAMOTO Shiro; KOGUCHI Nobuyuki
Journal of the Surface Science Society of Japan, 日本表面科学会, 22, 3, 203-209, 10 Mar. 2001
Japanese

アトムサブライム法による表面新機能物質探索に関する研究
塚本史郎; 下田正彦; 大野隆央; 小口信行
文部科学省金属材料技術研究所研究報告集, 23, 399-409, 26 Feb. 2001
Japanese

半導体量子ドットレーザの創製と特性評価に関する研究
小口信行; 塚本史郎; 渡辺克之; 間野高明; LEE C D; NOH S K; LEEM J Y; LEE H J
文部科学省金属材料技術研究所研究報告集, 23, 453-463, 26 Feb. 2001
Japanese

Optical anisotropy in InGaAs concave disks fabricated by Heterogeneous Droplet Epitaxy
T Mano; K Ono; S Tsukamoto; M Oshima; N Koguchi
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, SPRINGER-VERLAG BERLIN, 87, 1269-1270, 2001, Peer-reviwed, We have successfully observed optical anisotropy in InGaAs quantum dots (QDs) fabricated by Heterogeneous Droplet Epitaxy (HDE), in which the lateral confinement along [110] is stronger than that along [1 (1) over bar0]. Comparing the observed aisotropy with the estimated size and aspect ratio of the QDs, the observed three peaks were attributed to the valence band mixing between the heavy-hole-like band and the light-hole-like band.
International conference proceedings, English

InAs quantum dots growth by modified droplet epitaxy using sulfur termination
Takaaki Mano; Takaaki Mano; Katsuyuki Watanabe; Katsuyuki Watanabe; Shiro Tsukamoto; Yasutaka Imanaka; Tadashi Takamasu; Hiroshi Fujioka; Giyu Kido; Masaharu Oshima; Nobuyuki Koguchi
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, The Japan Society of Applied Physics, 39, 7, 4580-4583, 01 Dec. 2000, We have applied the modified droplet epitaxy method using sulfur termination to fabricate InAs quantum dots on GaAs(00l) substrates for the first time. It is observed that the S-terminated surface effectively prevents the two-dimensional growth of InAs, forming InAs nanocrystals. From the magneto-photoluminesccnce measurements of this structure, three-dimensional quantum confinement effect was confirmed. This modified droplet epitaxy method is promising for the fabrication of quantum dots, not only in the lattice-matched system but also in the lattice-mismatched system. © 2000 The Japan Society of Applied Physics.
English

Stoichiometry study of S-terminated GaAs(001)-(2 × 6) surface with synchrotron radiation photoelcctron spectroscopy
Masahiko Shimoda; Shiro Tsukamoto; Takahisa Ohno; Nobuyuki Koguchi; Munehiro Sugiyama; Munehiro Sugiyama; Satoshi Maeyama; Satoshi Maeyama; Yoshio Watanabe
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, The Japan Society of Applied Physics, 39, 7, 3943-3946, 01 Dec. 2000, Synchrotron radiation photoelectron spectroscopy (SRPES) has been performed to investigate the surface stoichiometry of the S-terminatcd GaAs(001)-(2 × 6), and in particular, to determine the chemical species of the five dimers, which are separated by missing dimers and form the unit structure of the (2 × 6) reconstruction. The S 2p photoemission spectra show a significant decrease in the peak intensity with increasing substrate temperature, whereas no significant changes are observed for the As 3d photoemission spectra The Ga 3d spectra are decomposed into a bulk component and more than one surface component, one of which is attributed to a Ga-S bond and decreases in accordance with the change observed in the S 2p spectra. These results strongly support the model that each pair of the five dimers in the (2 × 6) reconstruction consists of S-S dimers. © 2000 The Japan Society of Applied Physics.
English

Nanoscale InGaAs concave disks fabricated by heterogeneous droplet epitaxy
T Mano; K Watanabe; S Tsukamoto; N Koguchi; H Fujioka; M Oshima; CD Lee; JY Leem; HJ Lee; SK Noh
APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 76, 24, 3543-3545, Jun. 2000, The detailed cross-sectional structure of InGaAs quantum dots fabricated by a heterogeneous droplet epitaxy method was investigated by means of cross-sectional transmission electron microscopy observation. It was confirmed that concave disks without any dislocations or wetting layer were formed at the upper part of the flat surface. This result was consistent with the change of photoluminescence intensity and peak position. The sizes of the disks were estimated to be 30 and 12 nm in lateral and vertical directions, respectively. From this estimation, the occurrence of a phase-separation effect is suggested. (C) 2000 American Institute of Physics. [S0003-6951(00)01724-1].
Scientific journal, English

Magneto-photoluminescence study of InGaAs quantum dots fabricated by droplet epitaxy
T Mano; K Watanabe; S Tsukamoto; Y Imanaka; T Takamasu; H Fujioka; G Kido; M Oshima; N Koguchi
PHYSICA E, ELSEVIER SCIENCE BV, 7, 3-4, 448-451, May 2000, We have successfully measured magneto-photoluminescence of InGaAs quantum dots (QDs) fabricated by droplet epitaxy with highly dense Ga droplets, termed separated-phase enhance epitaxy with droplets (SPEED). Ln the low magnetic field region, the PL peak energy shift increases linearly with square of the magnetic field. From the estimated Bohr radii for the QDs, it is found that the size of the QDs in the lateral direction is 2.7-times larger than that in the vertical direction. Moreover, using high magnetic region for estimating the detailed lateral size, the cyclotron radius around 25 T in the QDs becomes equal to the lateral size of the QDs. The cyclotron radius of 5.1 nm at 25 T suggests that the size of the InGaAs QDs in lateral direction might be as small as about 10 nm. (C) 2000 Elsevier Science B.V. All rights reserved.
Scientific journal, English

ナノスペースラボによる新材料の創製に関する研究
小口信行; 知京豊裕; 塚本史郎; 石毛桂子; 大野隆央; 下田正彦
文部科学省金属材料技術研究所研究報告集, 22, 343-361, 31 Mar. 2000
Japanese

Fabrication of InGaAs Quantum Dots by SPEED Method and Its Photoluminescence Properties.
間野高明; 渡辺克之; 塚本史郎; 今中康貴; 高増正; 藤岡洋; 木戸義勇; 尾嶋正治; 小口信行
表面科学, 日本表面科学会, 21, 2, 107-113, 10 Feb. 2000
Japanese

Fabrication of InGaAs quantum dots on GaAs(001) by droplet epitaxy
T Mano; K Watanabe; S Tsukamoto; H Fujioka; M Oshima; N Koguchi
JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 209, 2-3, 504-508, Feb. 2000, We have proposed a new self-organized growth method for InGaAs quantum dots (QDs) using droplet epitaxy with highly dense Ga droplets. During the crystallization process of InGaAs in droplet epitaxy, the highly dense Ga droplets effectively prevented the two-dimensional growth of InGaAs. Phase-separation during annealing for the InAs-GaAs system resulted in the formation of high-quality InGaAs QDs in the upper part of the sample with a flat surface, (C) 2000 Elsevier Science B.V. All rights reserved.
Scientific journal, English

Magic numbers in Ga clusters on GaAs (001) surface
S Tsukamoto; N Koguchi
JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 209, 2-3, 258-262, Feb. 2000, Ga clusters on a GaAs (0 0 1)(2 x 4)-As surface were successfully observed by a system in which scanning tunneling microscopy (STM) and molecular beam epitaxy (MBE) were equipped with not separated each chambers but one incorporate unit. It is found that the boundary between crystalline adatoms and magic clusters was found as a Ga trimer (N = 3) cluster. The dangling bonds of a Ga dimer (N = 2) are completely empty, satisfying electron counting heuristics, resulting no clear observation by the filled state imaging, and showing the crystalline adatoms. However, the Ga trimer is clearly observed. Moreover, the Ga trimer and heptamer (N = 7) have 9 and 21 electrons in molecular orbital states, which are closed to the magic numbers of spherical jellium, 8 and 20 respectively. It seems that this excess one electron becomes the support between the cluster and the substrate. (C) 2000 Elsevier Science B.V. All rights reserved.
Scientific journal, English

電子・光機能探索ラボを基調としたナノサイズ効果利用材料の創製に関する研究 1 量子閉じ込めサイズ効果の探索による無機クラスター材料創製に関する研究 (科学技術庁研究開発局S)
小口信行; 知京豊裕; 塚本史郎; 石毛桂子
ナノスペースラボによる新材料創製に関する研究(第2期)成果報告書 平成9-10年度, 91-112, 2000
Japanese

Fabrication of InGaAs Quantum Dots by SPEED Method and Its Photoluminescence Properties.
MANO Takaaki; WATANABE Katsuyuki; TSUKAMOTO Shiro; IMANAKA Yasutaka; TAKAMASU Tadashi; FUJIOKA Hiroshi; KIDO Giyu; OSHIMA Masaharu; KOGUCHI Nobuyuki
J. Surf. Sci. Soc. Jpn., The Surface Science Society of Japan, 21, 2, 107-113, 2000, Uniform InGaAs Quantum dots were fabricated by modified droplet epitaxy method termed Separated-Phase Enhanced Epitaxy with Droplets (SPEED). Due to the surface diffusion length difference between In and Ga, highly dense Ga droplets were formed around InGa alloy droplets. During the crystallization process of the droplets, these highly dense Ga droplets effectively prevented the two-dimensional growth of InGaAs. Moreover, phase separation effect was enhanced during the annealing process. As the result, InGaAs quantum dots, whose size was smaller than that of droplets, were formed in the upper part of the sample with a flat surface. These quantum dots provide narrow (21.6 meV) photoluminescence spectra. From the magneto-photoluminescence measurements, the sizes of quantum dots were estimated to be 10 nm and 3.7 nm in lateral and vertical directions, respectively.
Japanese

New self-organized growth method for InGaAs quantum dots on GaAs(001) using droplet epitaxy
T Mano; K Watanabe; S Tsukamoto; H Fujioka; M Oshima; N Koguchi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, JAPAN J APPLIED PHYSICS, 38, 9AB, L1009-L1011, Sep. 1999, Quantum dot (QD) systems for InGaAs/GaAs without a wetting layer have been fabricated on GaAs (001) surfaces by a new self-organized growth method using droplet epitaxy with highly dense Ga droplets. Droplets of InGa alloy with highly dense Ga droplets have been formed by supplying 1) Ga, 2) In and 3) Ga molecular beams, sequentially. These highly dense Ga droplets have successfully prevented the two-dimensional growth of InGaAs during crystallization under As Bur supply. In the plan-view transmission electron microscope image, the InGaAs QDs with the density of 7 x 10(9) cm(-2) are observed. These QDs show a very sharp photoluminescence peak (full width half maximum (FWHM): 21.6 meV) at 946 nm.
Scientific journal, English

Atomic-level in situ real-space observation of Ga adatoms on GaAs(001)(2 x 4)-As surface during molecular beam epitaxy growth
S Tsukamoto; N Koguchi
JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 201, 118-123, May 1999, We study in situ scanning tunneling microscopy (STM) observations of Ga adatoms on the molecular beam epitaxy (MBE) growth front, GaAs(0 0 1)(2 x 4)-As surface, with a system in which STM and MBE are completely one. It is found that Ga adatoms are self-organized about one unit cell far from the B-step edge and on a missing dimmer row. Moreover, the three Ga adatoms form a trigonal surface structure. And this trigonal changed to a tetragonal structure with the addition of one Ga atom. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
Scientific journal, English

Transition from GaAs(001)(2x6)-S to (2x3)-S surfaces observed by synchrotron radiation photoelectron spectroscopy, X-ray absorption near edge structure, and X-ray standing waves
S Tsukamoto; M Shimoda; M Sugiyama; Y Watanabe; S Maeyama; T Ohno; N Koguchi
COMPOUND SEMICONDUCTORS 1998, IOP PUBLISHING LTD, 162, 603-608, 1999, Peer-reviwed, Transition from GaAs(001)(2x6)-S to (2x3)-S surfaces was successfully observed by synchrotron radiation photoelectron spectroscopy(SRPES), X-ray absorption near edge structure(XANES), and X-ray standing waves(XSW). With increasing substrate temperature, a (2x6) structure turns into a (20) structure at around 520 degreesC releasing about 20% surface sulfur atoms, observed by SRPES, which amount consist with the central dimer pairs of the (2x6) structure. The E polarization dependence in the S K-edge XANES spectra suggests that interdiffussion of S atoms should not be occurred, and that S atoms are still in the top layer bridge site even after high temperature annealing. Moreover, by XSW, it was found that, after the transition from the (2x6) to the (20), Ga-S-Ga bridge-bond formation was almost same as that of the (2x6). Therefore, by the transition, only the central dimer pairs of the (2x6) structure were released without interdiffussion and with keeping Ga-S-Ga bridge-bond formation.
Scientific journal, English

Ga-S-Ga bridge-bond formation on in-situ S-treated GaAs(001) surface observed by synchrotron radiation photoemission spectroscopy, X-ray absorption near edge structure, and X-ray standing waves
M Sugiyama; S Maeyama; Y Watanabe; S Tsukamoto; N Koguchi
APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, 130, 436-440, Jun. 1998, The chemical and structural changes of an in-situ S-treated GaAs(001)surface induced by thermal treatments were studied by synchrotron radiation photoemission spectroscopy (SRPES), X-ray absorption near edge structure (XANES), and X-ray standing waves (XSW). SRPES results revealed that As-S chemical states in the As 3d core level disappear from the surface with annealing at 400 degrees C. S K-edge XANES spectra showed that most of the S atoms are in a S-Ga chemical state after annealing at about 350-400 degrees C. XSW results suggested that the exchange reaction between the S and As atoms begins to occur at an annealing temperature lower than 300 degrees C, and that the Ga-S-Ga bridge-bond formation is almost completed with annealing at about 350-400 degrees C. (C) 1998 Elsevier Science B.V. All rights reserved.
Scientific journal, English

Coverage analysis of a sulfur-terminated GaAs(001)-(2x6) surface: the effect of double sulfur-treatment
M Shimoda; S Tsukamoto; N Koguchi
SURFACE SCIENCE, ELSEVIER SCIENCE BV, 402, 1-3, 669-672, May 1998, Sulfur-terminated GaAs(001)-(2 x 6) surfaces have been investigated by photoelectron and Auger electron spectroscopy. Surface coverages of S and As are estimated from the angle dependence of electron emission to evaluate the effect of double S-treatment, which is a preparation technique developed by Tsukamoto et al. It is found that a large amount of As remains on the surface after the first S-treatment and that a large portion of the residual As is replaced with S in the second S-treatment. This fact explains the results of the scanning tunneling microscopy observation that the surface homogeneity is significantly improved by the double S-treatment. (C) 1998 Elsevier Science B.V. All rights reserved.
Scientific journal, English

Research on new material invention by molecular lab. Arrangement operation and optical function of inorganic cluster. ( Science and Technology Agency, Research and Development Bureau S )
小口信行; 知京豊裕; 石毛桂子; 塚本史郎
ナノスペースラボによる新材料創製に関する研究(第1期)成果報告書 平成6-8年度, 87-98, 1998
Japanese

Photoelectron and Auger electron diffraction studies of a sulfur-terminated GaAs(001)-(2x6) surface
M Shimoda; S Tsukamoto; N Koguchi
SURFACE SCIENCE, ELSEVIER SCIENCE BV, 395, 1, 75-81, Jan. 1998, Core-level X-ray photoelectron diffraction (XPD) and Auger electron diffraction (AED) have been applied to investigate the sulfur-terminated GaAs(001)-(2 x 6) surface. No forward scattering peaks were found in the XPD pattern of S 2s emission, indicating that adsorbed S atoms form a single layer on the GaAs substrate. In accordance with the zincblende structure of GaAs, the AED patterns of Ga L3M45M45 and As L3M45M45 emission almost coincide with each other, if one of the emissions is rotated by 90 around the [001] direction. This fact suggests that the diffraction patterns mainly reflect the structure of the bulk GaAs crystal. In order to investigate the surface structure, AED patterns in large polar angles were analyzed with single scattering cluster (SSC) calculations. The best result was obtained with a model cluster where the S-S bond length was set at 0.28 nm, 30% shorter than the corresponding length of the ideal (1 x 1) structure, and the adsorption height was set at 0.12-0.13 nm, 10% shorter than the ideal interlayer distance of GaAs(001) planes. These values are in good agreement with the results of STM measurements. A modulation of the inter-dimer distance was also found, suggesting the existence of missing dimers. (C) 1998 Elsevier Science B.V.
Scientific journal, English

Scanning tunneling spectroscopy and first-principles investigation on GaAs(001)(2x6)-S surface formed by molecular beam epitaxy
S Tsukamoto; T Ohno; N Koguchi
JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 175, 1303-1308, May 1997, The surface reconstruction of, in situ prepared, S-terminated GaAs (001) is studied by scanning tunneling microscopy and a first-principles pseudopotential method. According to an electron counting model, in order to form this (2 x 6)-S on GaAs (001) surface, one electron needs to be transferred from each S dimer to the Ga dangling bonds on the missing dimer region. As a result of the first-principles investigation on the S-S bond length of one S dimer, the separations are calculated as 0.2370 nm and 0.3897 nm, with and without one electron transfer, respectively. Experimental result agreed well with the former condition. This indicates that there may be a long-range electron transfer on this (2 x 6) structure. Moreover, the calculated electronic structure of this S dimer with one electron transfer shows a flat unoccupied band which is mainly caused by the antibonding band of the S-S bond. This result also agreed well with conductivity spectrum of this (2 x 6) surface by scanning tunneling spectroscopy, which shows a peak on the conduction band side.
Scientific journal, English

Study on material invention for high-performance photoelectric device by droplet epitaxy method.
小口信行; 高橋聡; 知京豊裕; 石毛桂子; 塚本史郎
文部科学省金属材料技術研究所研究報告集, 19, 153-165, Mar. 1997
Japanese

Observation of enhanced lateral confinement of excitons in GaAs quantum wires with various sizes (7-30 nm) by magnetophotoluminescence measurements
Y. Nagamune; Y. Nagamune; T. Tanaka; T. Kono; T. Kono; S. Tsukamoto; S. Tsukamoto; M. Nishioka; Y. Arakawa; K. Uchida; N. Miura
Applied Physics Letters, 2502, 01 Dec. 1995, We investigated magnetophotoluminescence spectra up to 40 T of GaAs quantum wires with various lateral widths (7-30 nm) grown by the selective metalorganic chemical vapor deposition. The photoluminescence peak shift due to the magnetic fields is more suppressed with decreasing the wire width. The observed energy shift was in good agreement with the calculation based on a variation method. These results clearly demonstrate existence of the two-dimensional confinement effect and enhanced binding energy of excitons. In the narrowest wire (7 nm), however, comparison of the experimental results with the calculation indicates penetration of exciton wavefunction from the two-dimensional potential to the barrier region.© 1995 American Institute of Physics.
Scientific journal

SURFACE RECONSTRUCTION OF SULFUR-TERMINATED GAAS(001) OBSERVED DURING ANNEALING PROCESS BY SCANNING-TUNNELING-MICROSCOPY
S TSUKAMOTO; N KOGUCHI
JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 150, 1-4, 33-37, May 1995, The surface reconstruction of in-situ prepared sulfur-terminated (S-terminated) and sulfur-protected (S-protected) GaAs(001) is studied by scanning tunneling microscopy (STM) at high temperatures of up to 260 degrees C. We demonstrate a new reordering process from the (4 x 6) Ga-stabilized surface to the (2 x 6) S-stabilized surface and a novel method of air protection using a S passivation layer. Moreover, the in-situ observation of the annealing process of this S-protection layer is performed by high-temperature STM, avoiding the adsorption from environments and verifying that the (2 x 6) structure still becomes dominant on the S-terminated GaAs(001) surface without the effects of As atoms.
Scientific journal, English

Observation of enhanced exciton binding energy in GaAs quantum wires by using a magnetophotoluminescence measurement
Y. Nagamune; T. Kono; S. Tsukamoto; M. Nishioka; Y. Arakawa; K. Uchida; N. Miura
Proceedings of the International Quantum Electronics Conference (IQEC'94), 121-122, 1994, Magnetophotoluminescence measurements for GaAs/Al0.4Ga0.6As quantum wires QWRs with various widths were performed to investigate enhancement of binding energy of excitons in QWRs. The experimental results demonstrated enhancement of 1-D exciton binding energy by the 2-D confinement effect.
International conference proceedings

GaAs quantum dots with lateral dimension of 25 nm fabricated by selective metalorganic chemical vapor deposition growth
Y. Nagamune; M. Nishioka; S. Tsukamoto; Y. Arakawa
Applied Physics Letters, 64, 19, 2495-2497, 1994, We report on in situ fabrication and the photoluminescence spectra of pyramid-shaped GaAs dot structures grown on (100) GaAs substrates using selective epitaxial growth by metalorganic chemical vapor deposition. The dot structures have lateral size of 25 nm and the period of 140 nm, showing a clear photoluminescence peak with strong intensity. In addition, energy change of magnetophotoluminescence spectra demonstrates the enhancement of exciton binding energy due to lateral confinement.
Scientific journal, English

Observation of sulfur-terminated GaAs(001)-(2×6) reconstruction by scanning tunneling microscopy
Shiro Tsukamoto; Nobuyuki Koguchi
Applied Physics Letters, 65, 17, 2199-2201, 1994, Scanning tunneling microscopy (STM) images of smooth, in situ prepared, sulfur-terminated (S-terminated) GaAs(001) surface reconstruction are presented. It is found that (2×6) surface reconstruction is dominant on the S-terminated GaAs(001) surface. This (2×6) reconstruction, of which the cell contains five S-S adatom dimers, is determined by both STM and reflection high-energy electron diffraction. The atomic model, which is consistent with both STM images and electron counting heuristics, is also shown. Moreover, this (2×6) reconstruction is also observed in the case of an (NH 4)2Sx-treated surface. © 1994 American Institute of Physics.
Scientific journal, English

Exciton radiative lifetime in GaAs quantum wires grown by metalorganic chemical-vapor selective growth
T. Kono; S. Tsukamoto; Y. Nagamune; F. Sogawa; M. Nishioka; Y. Arakawa
Applied Physics Letters, 64, 12, 1564-1566, 1994, We discuss measurement results of the exciton radiative lifetime in GaAs quantum wires grown by metalorganic chemical-vapor selective growth technique at 9 K. By changing the lateral width of the quantum wires in the range of 7-35 nm systematically, the lateral width dependence of the radiative exciton lifetime was measured. The results show that the measured lifetime increases from 260 to 422 ps with the decrease of the lateral width from 25 to 7 nm. This increase of the radiative lifetime can be explained by taking account of both reduced exciton coherence length and spreading of the wave function of electrons in the barrier region.
Scientific journal, English

Optical properties of GaAs quantum dots fabricated by MOCVD selective growth
Y. Nagamune; M. Nishioka; S. Tsukamoto; Y. Arakawa
Solid State Electronics, 37, 4-6, 579-581, 1994, In spite of a bottle-neck prediction, strong photoluminescence intensity was observed from nanometer-scale GaAs quantum dot structures in situ fabricated by a selective growth technique using metal-organic chemical vapor deposition. The dot structures showed a large PL peak by excitation above the AlGaAs barrier from 8 K to room temperature, while its intensity largely decreased by excitation below the barrier. This demonstrates that carrier diffusion smoothly occurs into the dots from the barrier region. © 1994.
Scientific journal, English

DIRECT FORMATION OF GAAS-GAALAS QUANTUM DOTS STRUCTURE BY DROPLET EPITAXY
N KOGUCHI; K ISHIGE; S TSUKAMOTO
GROWTH, PROCESSING, AND CHARACTERIZATION OF SEMICONDUCTOR HETEROSTRUCTURES, MATERIALS RESEARCH SOC, 326, 269-274, 1994, Numerous GaAs epitaxial microcrystals surrounded mainly by (111) and (110) facets having nearly equal size were grown on a sulfur(S)-terminated GaAs or GaAlAs surface by sequentially supplying Ga and As molecular beams. The GaAlAs layer growth over the GaAs microcrystals was performed by MEE process for burying GaAs microcrystals.
International conference proceedings, English

2×6 surface reconstruction of in situ sulfur-terminated GaAs(001) observed by scanning tunneling microscopy
Shiro Tsukamoto; Nobuyuki Koguchi
Japanese Journal of Applied Physics, 33, 8, L1185-L1188, 1994, We present atomic-resolution images, obtained with scanning tunneling microscopy (STM), of smooth, in situ prepared, sulfur-terminated (S-terminated) GaAs(001) surface reconstruction. It is found that 2×6 surface reconstruction is dominant on the S-terminated GaAs(001) surface. This 2×6 surface reconstruction, of which the cell contains five S-S adatom dimers, is determined by both STM and reflection high-energy electron diffraction. Atomic models, which are consistent with both STM images and electron-counting heuristics, are also shown. © 1994 The Japan Society of Applied Physics.
Scientific journal, English

Fabrication of quantum wires and dots for quantum optoelectronic devices
Yasuhiko Arakawa; Shiro Tsukamoto; Yasushi Nagamune; Masao Nishioka
Optoelectronics - Devices and Technologies, 8, 499-508, 01 Dec. 1993, We discuss fabrication of two types of GaAs quantum wires using in-situ MOCVD selective growth techniques on SiO2 patterned substrates, including the optical properties of those nano-structures. The first technique achieved triangular-shaped GaAs quantum wires above the epitaxially grown V-grooves with a lateral width less than 10 nm. Photoluminescence (PL) and magneto-PL measurements clearly demonstrate the quantum wire effects in the nano-structures. The second method also demonstrates its usefulness for fabricating the GaAs quantum wires. Using a similar but slightly different selective growth technique, GaAs dots with a dimension of 25 nm×25 nm×12 nm surrounded by AlGaAs regions were prepared.

FABRICATION OF INGAAS STRAINED QUANTUM-WIRE STRUCTURES USING SELECTIVE-AREA METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH
T ARAKAWA; S TSUKAMOTO; Y NAGAMUNE; M NISHIOKA; JH LEE; Y ARAKAWA
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, JAPAN SOC APPLIED PHYSICS, 32, 10A, L1377-L1379, Oct. 1993, Peer-reviwed, We fabricated InxGa1-x As strained quantum wire structures with various In compositions using a selective-area metal-organic chemical vapor deposition growth technique. Photoluminescence (PL) measurements at 14 K demonstrated that strained quantum wires of high quality were obtained when x is less than 0.35. Change of the full width at half-maximum of the PL peaks indicates that the structural dimensions of the quantum wires exceeded the critical thickness at around x=0.4.
Scientific journal, English

GROWTH-PROCESS AND MECHANISM OF NANOMETER-SCALE GAAS DOT-STRUCTURES USING MOCVD SELECTIVE GROWTH
Y NAGAMUNE; S TSUKAMOTO; M NISHIOKA; Y ARAKAWA
JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 126, 4, 707-717, Feb. 1993, Nanometer-scale GaAs dot-structures were fabricated by the selective epitaxial growth on SiO2-masked GaAs (100) substrates with low pressure metalorganic chemical vapor deposition. The growth process and the mechanism were investigated using the growth rate distribution and a surface potential model. It was revealed that the growth rates of the crystal planes change in dependence on the existence of other planes with faster growth rates, and that the in-plane migration is an important factor in the growth process. Based on these characteristics and the study on AlGaAs dot-structure growth, GaAs dot-structures three-dimensionally surrounded by Al0.4Ga0.6As were fabricated. The clear photoluminescence peak from the dots with high quantum efficiency shows the usefulness of the fabrication technique for quantum dots.
Scientific journal, English

Fabrication and Optical Properties of Quantum Wires and Quantum Dots by Metalorganic Chemical Vapor Selective Deposition
荒川 泰彦; 塚本 史郎; 永宗 靖; 西岡 政雄
生産研究, 東京大学生産技術研究所, 45, 2, p134-139, Feb. 1993, 特集 量子固体エレクトロニクス半導体微細加工技術の進歩に伴い，最近量子細線，量子ドット構造が広く注目を集めている．本報告では，有機金属気相選択成長法を用いたGaAs量子細線の作製技術について議論する．われわれが作製したGaAs量子細線は，SiO2パターン上の選択成長により形成され，一辺10nm以下の三角形の断面を有す．キャリアの二次元的量子閉じ込め効果は，フォトルミネッセンスや磁気フォトルミネッセンスなどの測定によりその存在が確認された．さらに同様な手法を用いてGaAs量子ドット構造の作製も行い横寸法25nmの量子ドットを得ることができた．
Japanese

Fabrication of GaAs quantum wires (∼10 nm) by metalorganic chemical vapor selective deposition growth
S. Tsukamoto; Y. Nagamune; M. Nishioka; Y. Arakawa
Applied Physics Letters, 63, 3, 355-357, 1993, GaAs triangular-shaped quantum wires with the lateral width of ∼10 nm are fabricated by metalorganic chemical vapor selective deposition growth technique. The lateral dimension is determined by both photoluminescence (PL) measurement and a high-resolution scanning electron micrograph observation. A systematic change in the size of the quantum wire exhibits consistent blue shifts of the PL peak keeping high intensities, which demonstrates enhanced two-dimensional quantum confinement with the material of high quality.
Scientific journal, English

Fabrication of GaAs arrowhead-shaped quantum wires by metalorganic chemical vapor deposition selective growth
S. Tsukamoto; Y. Nagamune; M. Nishioka; Y. Arakawa
Applied Physics Letters, 62, 1, 49-51, 1993, We fabricated GaAs arrowhead-shaped quantum wires utilizing both the selective growth technique and the difference in the stabilized crystal facet between GaAs and Al0.4Ga0.6As
the stabilized facet of the GaAs layer is (111)A and that of the Al0.4Ga0.6As layer is (311)A. A systematic change in the size of the quantum wire exhibits blue shifts of the photoluminescence peak, which is due to enhancement of the two-dimensional quantum confinement effect.
Scientific journal, English

Fabrication and optical properties of GaAs quantum wires and dots by MOCVD selective growth
Y. Arakawa; Y. Nagamune; M. Nishioka; S. Tsukamoto
Semiconductor Science and Technology, 8, 6, 1082-1088, 1993, The authors discuss fabrication of GaAs quantum wires and quantum dots using an in situ MOCVD selective growth technique on SiO2 patterned substrates, as well as the optical properties of those microstructures. Triangular-shaped GaAs quantum wires with a lateral width of 15 nm were obtained. The photoluminescence (PL) and magneto-PL measurements clearly demonstrate the existence of quantum wire effects in the structures. In addition, measures of time-resolved spectra indicate a longer carrier lifetime of excitons in the quantum wires compared with that in the quantum wells. Using a similar but slightly different selective growth technique, GaAs dots with a dimension of 25 nm*25 nm*12 nm surrounded by AlGaAs regions were prepared.
Scientific journal, English

FABRICATION OF INGAAS STRAINED QUANTUM WIRES USING SELECTIVE MOCVD GROWTH ON SIO2-PATTERNED GAAS SUBSTRATE
M NISHIOKA; S TSUKAMOTO; Y NAGAMUNE; T TANAKA; Y ARAKAWA
JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 124, 1-4, 502-506, Nov. 1992, Successful fabrication of thin In0.1Ga0.9As strained quantum wires by a metalorganic chemical vapor deposition selective growth technique is reported. The In0.1Ga0.9As strained quantum wires fabricated here are triangular-shaped with a lateral dimension of less than 40 nm. In addition, the selective growth behavior of InGaAs was investigated using dot structures on SiO2-patterned GaAs substrate changing substrate temperature, V/III ratio, and alloy composition of In. The results show that the growth behavior of InGaAs is similar to that of GaAs, indicating that the same growth technique as that for the GaAs quantum wires can be applied to the growth of InGaAs quantum wires.
English

PHOTOLUMINESCENCE SPECTRA AND ANISOTROPIC ENERGY SHIFT OF GAAS QUANTUM WIRES IN HIGH MAGNETIC-FIELDS
Y NAGAMUNE; Y ARAKAWA; S TSUKAMOTO; M NISHIOKA; S SASAKI; N MIURA
PHYSICAL REVIEW LETTERS, AMERICAN PHYSICAL SOC, 69, 20, 2963-2966, Nov. 1992, Magnetophotoluminescence spectra of GaAs quantum wires with lateral and vertical dimensions of 20 and 10 nm, respectively, were measured up to 40 T with three orthogonal magnetic field configurations. The observed photoluminescence peak shift with increase of applied magnetic field was strongly dependent on the direction of magnetic field, which directly demonstrates the existence of two-dimensional confinement in the quantum wires. It was found that the excitons were anisotropically shrunk in the quantum wires, and that the observed magnetic energy shift was consistent with the size of the quantum wire structure.
Scientific journal, English

Fabrication of GaAs arrowhead-like quantum wires by MOCVD selective growth and their optical properties
S. Tsukamoto; Y. Nagamune; M. Nishioka; Y. Arakawa
Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials, 744-746, Aug. 1992, We fabricated arrowhead-shaped quantum wires utilizing both the selective growth technique and the difference in the stabilized crystal facet between GaAs and AlGaAs. An systematic change in the size of the quantum wire exhibits consistent blue shifts of the photoluminescence peak from the quantum wires.

OPTICAL-PROPERTIES OF IN-SITU GROWN GAAS QUANTUM WIRES BY MOCVD SELECTIVE GROWTH
Y ARAKAWA; Y NAGAMUNE; S TSUKAMOTO; M NISHIOKA
INSTITUTE OF PHYSICS CONFERENCE SERIES, IOP PUBLISHING LTD, 127, 199-203, 1992, Peer-reviwed, We fabricated GaAs quantum wires with the minimal lateral dimension of 20 nm by a metal organic chemical vapor deposition selective growth technique. The GaAs quantum wires were in-situ grown on a V-groove formed by two GaAs triangular prisms which are selectively grown on SiO2 masked substrates. The measurement of photoluminescence and magneto-photoluminescence spectra clearly indicate existence of the quantized state in the quantum wires.
Scientific journal, English

FABRICATION OF GAAS QUANTUM WIRES ON EPITAXIALLY GROWN V-GROOVES BY METAL-ORGANIC CHEMICAL-VAPOR DEPOSITION
S TSUKAMOTO; Y NAGAMUNE; M NISHIOKA; Y ARAKAWA
JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 71, 1, 533-535, Jan. 1992, Successful fabrication of thin GaAs quantum wires (120-200 angstrom) x (200-300 angstrom) by a novel metal-organic chemical-vapor-deposition growth technique is reported. The GaAs quantum wires were grown on a V groove formed by two GaAs triangular prisms which were selectively grown on SiO2 masked substrates. The V groove has a very sharp corner at the bottom, which results in reduction of the effective width of the quantum wire structures. The measurement of photoluminescence and photoluminescence excitation spectra with polarization dependence indicate the existence of the quantized state in the quantum wires.
English

OPTICAL-PROPERTIES OF IN-SITU GROWN GAAS QUANTUM WIRES BY MOCVD SELECTIVE GROWTH
Y ARAKAWA; Y NAGAMUNE; S TSUKAMOTO; M NISHIOKA
QUANTUM EFFECT PHYSICS, ELECTRONICS AND APPLICATIONS, IOP PUBLISHING LTD, 127, 199-203, 1992, We fabricated GaAs quantum wires with the minimal lateral dimension of 20 nm by a metal organic chemical vapor deposition selective growth technique. The GaAs quantum wires were in-situ grown on a V-groove formed by two GaAs triangular prisms which are selectively grown on SiO2 masked substrates. The measurement of photoluminescence and magneto-photoluminescence spectra clearly indicate existence of the quantized state in the quantum wires.
International conference proceedings, English

TRANSPORT-PROPERTIES OF INASXSB1-X (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.55) ON INP GROWN BY MOLECULAR-BEAM EPITAXY
S TSUKAMOTO; P BHATTACHARYA; YC CHEN; JH KIM
JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 67, 11, 6819-6822, Jun. 1990, Peer-reviwed
Scientific journal, English

MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY INSB ON INP AND GAAS SUBSTRATES
JE OH; PK BHATTACHARYA; YC CHEN; S TSUKAMOTO
JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 66, 8, 3618-3621, Oct. 1989, Peer-reviwed
Scientific journal, English

Metal Droplet Effects on the Composition of Ternary Nitrides
Mani Azadmand; Stefano Vichi; Sergio Bietti; Daniel Chrastina; Emiliano Bonera; Maurizio Acciarri; Alexey Fedorov; Shiro Tsukamoto; Richard Nötzel; Stefano Sanguinetti
We investigate effects of metal droplets on the In incorporation in InGaN
epilayers grown at low temperature (450 C) by plasma assisted molecular beam
epitaxy. We find a strong reduction of the In incorporation when the surface is
covered by metal droplets. The such reduction increases with the droplet
density and the droplet surface coverage. We explain this phenomenonology via a
model that considers droplet effects on the incorporation of In and Ga adatoms
into the crystal by taking into account the combined effects of the higher
mobility of In, with respect to Ga, and to the vapor-liquid-solid growth that
takes place under the droplet by direct impingement of nitrogen. The proposed
model is general and can be extended to describe the incorporation of adatoms
during the growth of the material class of ternary compounds when droplets are
present on the surface., 16 Jul. 2019, arXiv:1907.06939

Droplet Controlled Growth Dynamics in Plasma-Assisted Molecular Beam Epitaxy of In(Ga)N Materials
Mani Azadmand; Luca Barabani; Sergio Bietti; Daniel Chrastina; Emiliano Bonera; Maurizio Acciarri; Alexey Fedorov; Shiro Tsukamoto; Richard Nötzel; Stefano Sanguinetti
We investigate the effect of the formation of metal droplets on the growth
dynamics of InGaN by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) at low
temperatures (T = 450{\deg}C). We find that the presence of droplets on the
growth surface strongly affects the adatom incorporation dynamics, making the
growth rate a decreasing function of the overall metal flux impinging on the
surface as soon as the metal dose exceeds the critical amount required for the
nucleation of droplets. We explain this phenomenon via a model that takes into
account droplet effects on the incorporation of metal adatoms into the crystal.
A relevant role is played by the vapor-liquid-solid growth mode that takes
place under the droplets due to nitrogen molecules directly impinging on the
droplets., 29 Nov. 2017, arXiv:1711.10714

STMBE断続供給法によるInAs量子ドット形成過程観察に関する研究
東條孝志; 塚本史郎
2017, 東京大学総合技術研究会予稿集 平成29年度(CD-ROM), 201702272495169440

III-V族半導体量子ドット成長のその場観察と成長メカニズム
塚本史郎
2016, 化学工学会秋季大会研究発表講演要旨集(CD-ROM), 48th, 201602246731176667

MBE成長中InAs-GaAs(001)表面における(n×3)再構成領域の変化
小西智也; 塚本史郎; 伊藤智徳; 秋山亨; 海田諒
2016, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), 77th, 2436-7613, 201602214631931546

Semiconductor Crystal Growth Mechanism studied by in-situ Observation Techniques(Prerace,Semiconductor Crystal Growth Mechanism studied by in-situ Observation Techniques)
Tsukamoto Shiro
The Japanese Association for Crystal Growth (JACG), Oct. 2015, Journal of the Japanese Association of Crystal Growth, 42, 3, 173-173, Japanese, 2187-8366, 110010006388, AN00188386

In断続供給によるInAs量子ドット形成のSTMBE観察
東條孝志; 東條孝志; 山口浩一; 塚本史郎
2015, 応用物理学会春季学術講演会講演予稿集(CD-ROM), 62nd, 2436-7613, 201502218782235308

InGaAs表面再構成分布と量子ドット規則化生成の数理解析
小西智也; BELL Gavin R.; 塚本史郎
2015, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), 76th, 2436-7613, 201502203274878604

In断続供給によるInAs量子ドット形成過程のSTMBE観察
東條孝志; 東條孝志; 山口浩一; 塚本史郎
2015, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), 76th, 2436-7613, 201502218874350074

Atomic-scale Fluctuation of InAs-GaAs(001) Surface Reconstruction and Non-classical Nucleation of Quantum Dots
Konishi Tomoya; Bell Gavin R.; Tsukamoto Shiro
The growth of InAs quantum dots on GaAs(001) shows a new aspect of non-classical nucleation, namely the dynamic formation of preferred growth sites within the substrate. Using fully in situ scanning tunnelling microscopy - molecular beam epitaxy, we observe rapidly changing transitions between domains of different surface reconstruction a few nm in size. Nucleation of 3D islands is preferred on one particular reconstruction, blurring the line between heterogeneous and homogeneous nucleation as traditionally understood on a static substrate., The Japanese Association for Crystal Growth (JACG), 2015, Journal of the Japanese Association of Crystal Growth, 42, 3, 174-179, Japanese, 2188-7268, 201502210192738452, 110010006389, AA12677650

7pAK-1 in-situ STM observation during compound semiconductor MBE growth
Tsukamoto Shiro
The Physical Society of Japan (JPS), 22 Aug. 2014, Meeting abstracts of the Physical Society of Japan, 69, 2, 634-634, Japanese, 1342-8349, 110009874223, AA11439205

STMBE法によるGaAs(001)上InAs3D島構造成長その場観察
東條孝志; 東條孝志; 山口浩一; 塚本史郎
2014, 応用物理学会春季学術講演会講演予稿集(CD-ROM), 61st, 2436-7613, 201402203871362513

InAsウェッティング層上ステップ構造近傍での量子ドット形成STMBE観察
東條孝志; 東條孝志; 山口浩一; 塚本史郎
2014, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), 75th, 2436-7613, 201402299550060830

STMBE法によるGaAs(001)面上InAs二次元島成長その場観察
東條孝志; 寺岡輝記; 塚本史郎
2013, 応用物理学会春季学術講演会講演予稿集(CD-ROM), 60th, 2436-7613, 201302228980473800

量子ドット発生直前のInAsウェッティング層における表面超構造ドメインの解析手法
小西智也; TAYLOR Greg; BELL Gavin; 塚本史郎
2012, 応用物理学関係連合講演会講演予稿集(CD-ROM), 59th, 201202225232625790

GaAs(110)表面上へのMn原子の取り込み
平山基; 塚本史郎
2012, 応用物理学会学術講演会講演予稿集(CD-ROM), 73rd, 201202244174392246

STMBEを利用したInAs量子ドット作製後アニール温度効果その場観察
東條孝志; 塚本史郎
2012, 応用物理学会学術講演会講演予稿集(CD-ROM), 73rd, 201202293717020566

GaAs基板上へのMnAs成長初期過程
平山基; BELL Gavin R.; BELL Gavin R.; 塚本史郎
2011, 応用物理学関係連合講演会講演予稿集(CD-ROM), 58th, 201102216987984956

GaN基板を用いた高リサイクルPd固定触媒の開発
平山基; 植田有紀子; 小西智也; 塚本史郎
2011, 応用物理学関係連合講演会講演予稿集(CD-ROM), 58th, 201102295947807935

STMBE法による位置制御した単一InAs量子ドットの作製
東條孝志; 吉田正裕; 秋山英文; 塚本史郎; 塚本史郎
2011, 応用物理学会学術講演会講演予稿集(CD-ROM), 72nd, 201102231643347530

STM観察のための半導体薄膜へき開条件
大平融; 勝瀬泰史; 上原信知; 塚本史郎
2011, 電気関係学会四国支部連合大会講演論文集(CD-ROM), 2011, 201102225960483350

硫黄終端GaAs担持有機Pd触媒のFT-IR測定
小西智也; 西脇永敏; 石川琢馬; 寺岡輝記; 植田有紀子; 塚本史郎
2010, 応用物理学関係連合講演会講演予稿集(CD-ROM), 57th, 201002298766552988

GaAs(001)面上Ga液滴によるナノホール形成のその場STM観察
寺岡輝記; SOMASCHINI Claudio; 東條孝志; 小西良明; 砂原米彦; 野田武司; 小西智也; 塚本史郎
2010, 応用物理学関係連合講演会講演予稿集(CD-ROM), 57th, 201002249517851508

3次元成長アシスト法によるナノドット成長の高温その場STM観察
東條孝志; 塚本史郎
2010, 応用物理学関係連合講演会講演予稿集(CD-ROM), 57th, 201002271255560871

GaN基板上Pd固定触媒のS終端効果
平山基; 植田有紀子; 小西智也; 塚本史郎
2010, 応用物理学会学術講演会講演予稿集(CD-ROM), 71st, 201002255279515456

InAsウェッティング層表面超構造ドメインと量子ドット生成パターンの統計的解析
小西智也; 塚本史郎
2010, 応用物理学会学術講演会講演予稿集(CD-ROM), 71st, 201002228687787840

ナノドット選択形成のMBE成長その場STM観察
東條孝志; 塚本史郎
2010, 応用物理学会学術講演会講演予稿集(CD-ROM), 71st, 201002273019700355

GaN-S-Pd基板触媒のマイクロ波を用いた反応への適用
杉岡智教; 小池晴夫; 奥山彰; 塚本史郎
2010, メディシナルケミストリーシンポジウム講演要旨集, 29th, 0919-214X, 201102206994967620

半導体担持型Pd触媒を用いた鈴木-宮浦カップリング:繰り返し利用可能・低漏洩
星谷尚亨; 星谷尚亨; 磯村暢宏; 下田正彦; 飯塚完司; 塚本史郎; 小西智也; 周東智; 有澤光弘
2009, 日本薬学会年会要旨集, 129th, 2, 0918-9823, 200902268208789400

Development of Practically Usable and Environmentally Acceptable Catalyst Supported on GaN Plate
西脇永敏; 小西智也; 塚本史郎
2009, 日本化学会講演予稿集, 89th, 1, 0285-7626, 200902255505999827

3次元成長アシスト法によるナノドット配列制御のその場STM観察
東條孝志; 塚本史郎
2009, 応用物理学会学術講演会講演予稿集, 70th, 1, 200902285861487128

走査型プローブ顕微鏡を用いたGaAs(110)へき開面の観察
小西良明; 大平融; 上原信知; 塚本史郎
2009, 電気関係学会四国支部連合大会講演論文集(CD-ROM), 2009, 200902276981551475

半導体基板のパラジウム触媒反応への適用
杉岡智教; 小池晴夫; 奥山彰; 西脇永敏; 塚本史郎
2009, 反応と合成の進歩シンポジウム講演要旨集, 35th, 0919-2123, 200902262681244170

硫黄終端GaAs(001)-(2x6)面上Pd有機金属触媒の触媒活性
石川琢馬; 西脇永敏; 森本真司; 小西智也; 東條孝志; BELL G.; 宮城勢治; 塚本史郎
2009, 応用物理学関係連合講演会講演予稿集, 56th, 1, 200902228546954415

硫黄終端GaN(0001)面上Pd有機金属触媒のXPS分析
三並貴大; 西脇永敏; 下田正彦; 森本真司; 松本高志; 小西智也; 塚本史郎
2009, 応用物理学関係連合講演会講演予稿集, 56th, 1, 200902232495794776

GaAs(001)面上InAsウェッティング層の成長その場STM観察
東條孝志; 寺岡輝記; 小西智也; 砂原米彦; 塚本史郎
2009, 応用物理学関係連合講演会講演予稿集, 56th, 1, 200902243551523057

GaAs(001)面上InAsウェッティング層表面超構造の解析
山本紗世; 山本稔; 岩田久典; 東條孝志; 小西智也; 釜野勝; 杉野隆三郎; 三木哲志; 森住昇; 塚本史郎
2009, 応用物理学関係連合講演会講演予稿集, 56th, 1, 200902289195599965

GaAs(001)面上In液滴によるナノホール形成その場STM観察
寺岡輝記; 野田武司; 東條孝志; 小西智也; 砂原米彦; 塚本史郎
2009, 応用物理学関係連合講演会講演予稿集, 56th, 1, 200902293118895680

硫黄終端GaAs(001)-(2x6)面におけるX線表面散乱測定
小西智也; 東條孝志; 西脇永敏; 木原義文; 森時秀司; 多田孝; 藤川誠司; 高橋正光; BELL Gavin; 石井晃; 塚本史郎
2009, 応用物理学関係連合講演会講演予稿集, 56th, 1, 200902283187585043

GaAs(001)面上InAs量子ドットの高温その場STM観察
若松大; 小西智也; 東條孝志; 栗坂昌克; 大津貴志; 砂原米彦; 塚本史郎
2008, 応用物理学関係連合講演会講演予稿集, 55th, 1, 200902229594053469

硫黄終端GaAs(001)-(2×6)面上Pd有機金属触媒のRHEED観察
石川琢馬; 小西智也; 東條孝志; BELL Gavin; 小西良明; 上原信知; 宮城勢治; 塚本史郎
2008, 応用物理学関係連合講演会講演予稿集, 55th, 1, 200902229670841943

GaAs(001)面上InAs量子ドット端の高温その場STM観察
東條孝志; 小西智也; 栗坂昌克; 若松大; 大津貴志; 多田孝; 森住昇; 塚本史郎
2008, 応用物理学関係連合講演会講演予稿集, 55th, 1, 200902230370078847

GaAs(001)面上InAs量子ドット近傍の高温その場STM観察
大津貴志; 小西智也; 東條孝志; 栗坂昌克; 若松大; 吉田岳人; 宮城勢治; 塚本史郎
2008, 応用物理学関係連合講演会講演予稿集, 55th, 1, 200902248712225304

GaAs(001)面上InAs量子ドット側面の高温その場STM観察
栗坂昌克; 小西智也; 東條孝志; 大津貴志; 若松大; 釜野勝; 塚本史郎
2008, 応用物理学関係連合講演会講演予稿集, 55th, 1, 200902252608645331

硫黄終端GaAs(001)-(2×6)面上Pd有機金属触媒のその場STM観察
小西智也; 東條孝志; 石川琢馬; BELL Gavin; 小西良明; 上原信知; 宮城勢治; 塚本史郎
2008, 応用物理学関係連合講演会講演予稿集, 55th, 1, 200902272141129947

MBE成長その場STM観察(STMBE)装置を用いた基礎実験の展望
塚本史郎
2008, 応用物理学関係連合講演会講演予稿集, 55th, 1, 200902291449316874

ナノ計測検討会報告書
田中一宜; 永井康介; 塚田捷; 花栗哲郎; 大須賀篤弘; 古宮聰; 二又政之; 渡部俊太郎; 金山敏彦; 高柳英明; 八瀬清志; 藤田大介; 田島道夫; 塚本史郎; 北野滋彦; 竹山春子; 阿多誠文; 小野崇人; 田村守; 菊地和也; 安田賢二; 谷田貝豊彦; 金村聖志; 水流徹; 塚本史郎; 金山敏彦; 今石宣之; 湯村守雄
2007, ナノ計測検討会報告書 平成19年, 200902224295068954

GaAs(001)基板上自然形成ナノピットへのInAs QDs MBE選択成長
磯村暢宏; 磯村暢宏; 塚本史郎; 永原清治; 飯塚完司; 荒川泰彦
2007, 応用物理学関係連合講演会講演予稿集, 54th, 1, 200902283724797885

GaAs基板担持型パラジウム触媒の高機能化
有澤光弘; 濱田昌弘; 磯村暢宏; 磯村暢宏; RABBANI Gulam; 下田正彦; 塚本史郎; 飯塚完司; 周東智; 西田篤司
2007, 触媒討論会討論会A予稿集, 100th, 1343-9936, 200902289590668399

新規不均一系GaAs担持型パラジウム触媒の開発
浜田昌弘; 塚本史郎; 下田正彦; 有沢光弘; 高宮郁子; 荒川泰彦; 西田篤司
2006, 日本薬学会年会要旨集, 126th, 4, 0918-9823, 200902246741503434

InAs量子ドットMBE成長その場STM観察
塚本史郎; 荒川泰彦
2006, 応用物理学会学術講演会講演予稿集, 67th, 200902203558166045

As無し高温表面クリーニング法を施したGaAs(001)基板表面の解析
磯村暢宏; 磯村暢宏; 塚本史郎; 永原靖治; 角田直輝; 角田直輝; 飯塚完司; 荒川泰彦
2006, 応用物理学関係連合講演会講演予稿集, 53rd, 1, 200902208730121140

As無し高温表面クリーニング法を施したGaAs(001)表面温度依存性の解析
磯村暢宏; 磯村暢宏; 塚本史郎; 永原靖治; 角田直輝; 角田直輝; 飯塚完司; 荒川泰彦
2006, 応用物理学会学術講演会講演予稿集, 67th, 1, 200902208757479585

Sb照射GaAs(001)表面上InAs量子ドットのMBE成長その場STM観察
角田直輝; 角田直輝; 塚本史吟; 永原靖治; 磯村暢宏; 磯村暢宏; 山口浩一; 荒川泰彦
2006, 応用物理学会学術講演会講演予稿集, 67th, 1, 200902234201483142

Sb照射GaAs(001)表面上InAs量子ドットMBE成長その場STM観察
角田直輝; 角田直輝; 塚本史郎; 永原靖治; 磯村暢宏; 磯村暢宏; 山口浩一; 荒川泰彦
2006, 応用物理学関係連合講演会講演予稿集, 53rd, 1, 200902244394742188

GaAs(001)基板上InAs quantum dot MBE成長その場高温STM観察
本間剛; 本間剛; 塚本史郎; 荒川泰彦
2006, 応用物理学関係連合講演会講演予稿集, 53rd, 1, 200902247731828366

Mn照射InAs量子ドットの光学特性
永原靖治; 永原靖治; 塚本史郎; 塚本史郎; 荒川泰彦; 荒川泰彦; 荒川泰彦
2006, 応用物理学関係連合講演会講演予稿集, 53rd, 3, 200902268678546741

25aXC-2 Study for initial stage of InAs quantum dot formation on GaAs(001) substrate using simulation and in situ STM
Ishii Akira; Oshima Shunsuke; Tsukamoto Shiro; Arakawa Yasuhiko
The Physical Society of Japan (JPS), 04 Mar. 2005, Meeting abstracts of the Physical Society of Japan, 60, 1, 856-856, Japanese, 1342-8349, 110004537335, AA11439205

半導体担持型パラジウム触媒の開発とその機能
高宮郁子; 有沢光弘; 塚本史郎; 下田正彦; 荒川泰彦; 西田篤司
2005, 日本薬学会年会要旨集, 125th, 4, 0918-9823, 200902299511299567

半導体表面ナノ構造の解析と応用
塚本史郎; 荒川泰彦
2005, 中部化学関係学協会支部連合秋季大会講演予稿集, 36th, 200902209600913610

GaAs基板担持型有機パラジウム触媒の製造とその機能
高宮郁子; 塚本史郎; 下田正彦; 有沢光弘; 浜田昌弘; 荒川泰彦; 西田篤司
2005, 触媒討論会討論会A予稿集, 96th, 1343-9936, 200902210227187391

p型変調ドープによるInAs量子ドットのPL強度増加
熊谷直人; 渡辺克之; 岩本敏; 塚本史郎; 荒川泰彦
2005, 応用物理学関係連合講演会講演予稿集, 52nd, 1, 200902211020495920

GaAs(001)基板上InAs wetting layer MBE成長その場高温STM観察
本間剛; 本間剛; 塚本史郎; 荒川泰彦
2005, 応用物理学会学術講演会講演予稿集, 66th, 1, 200902226009571361

InAs量子ドット発生メカニズムの実験的・理論的解析
塚本史郎; 石井晃; 大島俊輔; 荒川泰彦
2005, 応用物理学関係連合講演会講演予稿集, 52nd, 1, 200902227071319934

Sbを用いたMOCVD法自己形成InAs/GaAs量子ドットの高密度化・長波長化に関する検討
館林潤; GUIMARD Denis; YANG T.; 塚本史郎; 西岡政雄; 荒川泰彦
2005, 応用物理学関係連合講演会講演予稿集, 52nd, 1, 200902259920210576

Development of Novel Palladium Catalyst Supported on GaAs Substrate and its Application to Organic Synthesis
高宮郁子; 有沢光弘; 塚本史郎; 下田正彦; 荒川泰彦; 西田篤司
2005, 日本化学会講演予稿集, 85th, 1, 0285-7626, 200902284082119256

GaAs(001)-c(4×4)上のSb照射表面その場STM観察
角田直輝; 角田直輝; 塚本史郎; 本間剛; 本間剛; 磯村暢宏; 磯村暢宏; 山口浩一; 荒川泰彦
2005, 応用物理学会学術講演会講演予稿集, 66th, 1, 200902286860738786

As無し高温表面クリーニング法を施したGaAs(001)基板その場STM観察
磯村暢宏; 磯村暢宏; 塚本史郎; 本間剛; 本間剛; 角田直輝; 角田直輝; 飯塚完司; 荒川泰彦
2005, 応用物理学会学術講演会講演予稿集, 66th, 1, 200902297311817900

GaAs(001)面上InAs量子ドットMBE成長時その場STM観察
塚本史郎; 小口信行; 荒川泰彦
2004, 応用物理学会学術講演会講演予稿集, 65th, 200902216605580178

液滴エピタキシーを用いたInGaAs量子ドット成長と歪みを利用した自己配列制御
間野高明; 塚本史郎; 小口信行; 尾嶋正治
2004, 応用物理学会学術講演会講演予稿集, 65th, 200902228487057935

新規GaAs担持型パラジウム触媒の合成と機能
高宮郁子; 塚本史郎; 下田正彦; 宮下直樹; 有沢光弘; 荒川泰彦; 西田篤司
2004, 触媒討論会討論会A予稿集, 94th, 1343-9936, 200902241394688230

InAs Wetting Layer表面構造のその場STM高温観察
塚本史郎; 荒川泰彦
2004, 応用物理学会学術講演会講演予稿集, 65th, 1, 200902296753204472

新規GaAs担持型パラジウム錯体の創成
高宮郁子; 宮下直樹; 有沢光弘; 塚本史郎; 下田正彦; 荒川泰彦; 西田篤司
2004, 日本薬学会年会要旨集, 124th, 2, 0918-9823, 200902211858145425

MBE法によるInAs量子ドットへのBe添加の影響
熊谷直人; 渡辺克之; 塚本史郎; 荒川泰彦
2004, 応用物理学会学術講演会講演予稿集, 65th, 1, 200902226188065015

InP(100)基板上のInAs量子ドットのアニール効果
角田浩二; 館林潤; 西岡政雄; 塚本史郎; 荒川泰彦
2004, 応用物理学会学術講演会講演予稿集, 65th, 1, 200902293530136069

Defected Ga-As dimer structure on the GaAs (001)-c (4x4) surface
Ohtake A.; Nakamura J.; Tsukamoto S.; Koguchi N.; Natori A.
The Physical Society of Japan (JPS), 06 Mar. 2003, Meeting abstracts of the Physical Society of Japan, 58, 1, 852-852, Japanese, 1342-8349, 110002223443, AA11439205

InAs量子ドットMBE成長時その場STM直接観察
塚本史郎; BELL G R; PRISTOVSEK M; ORR B G; 荒川泰彦; 小口信行
2003, 応用物理学会学術講演会講演予稿集, 64th, 1, 200902244926658083

硫黄終端GaAs(001)基板上に結合した有機金属錯体の触媒活性
塚本史郎; 有沢光弘; 下田正彦; PRISTOVSEK M; 宮下直樹; 高宮郁子; 荒川泰彦; 西田篤司
2003, 応用物理学会学術講演会講演予稿集, 64th, 3, 200902264491333579

歪みバッファ層によるInAs量子ドットの高均一・高密度化
楊涛; 館林潤; 塚本史郎; 西岡政雄; 荒川泰彦
2003, 応用物理学会学術講演会講演予稿集, 64th, 1, 200902237833980841

A new structure model proposed for the GaAs(001)-c(4×4) surface
Ohtake A.; Nakamura J.; Tsukamoto S.; Koguchi N.; Natori A.
The Physical Society of Japan (JPS), 13 Aug. 2002, Meeting abstracts of the Physical Society of Japan, 57, 2, 753-753, Japanese, 1342-8349, 110009719782, AA11439205

27pYF-9 Structure analysis for Ga-stabilized GaAs(001) surfaces
Ohtake A.; Tsukamoto S.; Koguchi N.; Ozeki M.
The Physical Society of Japan (JPS), 01 Mar. 2002, Meeting abstracts of the Physical Society of Japan, 57, 1, 874-874, Japanese, 1342-8349, 110009774580, AA11439205

As-rich GaAs(001) surfaces observed during As4-irradition by scanning tunneling microscopy
Shiro Tsukamoto; Markus Pristovsek; Bradford G. Orr; Akihiro Ohtake; Gavin R. Bell; Nobuyuki Koguchi
As-rich GaAs (001) surfaces are successfully observed during As4-irradition
by a system in which scanning tunneling microscopy (STM) and molecular beam
epitaxy can be performed simultaneously. With a substrate temperature of 440 C
and an As4 partial pressure of 2x10-6 torr, reflection high energy electron
diffraction patterns and reflectance anisotropy spectra confirm a c(4x4)
As-stabilized surface. STM images clearly show alteration of the surface
reconstructions while scanning. It is postulated that continual attachment /
detachment of As molecules to and from the surface produces the observed
dynamic behavior., 05 Feb. 2002, physics/0202013

Ga-rich GaAs(001) surfaces observed during high-temperature annealing by scanning tunneling microscopy
Shiro Tsukamoto; Markus Pristovsek; Bradford G. Orr; Akihiro Ohtake; Gavin R. Bell; Nobuyuki Koguchi
Ga-rich GaAs (001) surfaces are successfully observed during high-temperature
annealing by scanning tunneling microscopy (STM). With a substrate temperature
of 550 C, reflection high-energy diffraction patterns and reflectance
anisotropy spectra confirm a (4x2) Ga-stabilized surface. STM images clearly
show alteration of the surface reconstructions while scanning. It is postulated
that detaching and attaching of Ga adatoms may be the cause of these surface
dynamics. For these conditions it is determined that zeta(4x4), zeta2(4x4) and
zeta(4x6) reconstructions co-exist on the surface. The zeta2(4x4)
reconstruction contains a Ga tetramer cluster and in more Ga-rich conditions,
the zeta2(4x6) surface has a Ga octamer cluster., 29 Jan. 2002, physics/0201060

Ga安定化GaAs(001)-c(8x2)表面の高温でのRHEED構造解析
大竹晃浩; 塚本史郎; 小口信行; 尾関雅志
2002, 応用物理学関係連合講演会講演予稿集, 49th, 1, 200902111466034400

地域環境ボランティア活動への参加と生活経験
塚本利幸; 霜浦森平; 山添史郎; 野田浩資
2002, 福井県立大学論集, 21, 0918-9637, 200902113219829044

GaAs表面におけるGaナノクラスターの形成
塚本史郎; PRISTOVSEK M; 大竹晃浩; 小口信行
2002, 超微粒子とクラスター懇談会研究会講演予稿集, 6th, 200902160006369609

As安定化GaAs(001)-c(4x4)表面に対する新たな構造モデル
大竹晃浩; 中村淳; 塚本史郎; 小口信行; 名取晃子
2002, 応用物理学会学術講演会講演予稿集, 63rd, 1, 200902161685841903

Ga安定化GaAs(001)表面の高温STM観察
塚本史郎; PRISTOVSEK M; 大竹晃浩; ORR B G; BELL G R; 小口信行
2002, 応用物理学関係連合講演会講演予稿集, 49th, 1, 200902180586204076

Ga-rich GaAs(001)表面のSTM観察
塚本史郎; PRISTOVSEK M; 大竹晃浩; 小口信行
2002, 応用物理学会学術講演会講演予稿集, 63rd, 1, 200902188415747277

InAs/GaAs(110)上の周期的歪み場を利用したナノ構造の選択成長
小山紀久; 大竹晃浩; PRISTOVZEK M; 塚本史郎; ORR B G; 大野隆央; 小口信行
2002, 応用物理学関係連合講演会講演予稿集, 49th, 1, 200902130421299725

Ga-rich GaAs[001] surfaces observed by STM during high-temperature annealing in MBE chamber
S. Tsukamoto; M. Pristovsek; A. Ohtake; B. G. Orr; B. G. Orr; G. R. Bell; G. R. Bell; T. Ohno; N. Koguchi
© 2002 IEEE. Si-doped GaAs[001] 1°off A (n = 2 × 1018cm-3) substrates were prepared by standard procedures in MBE and then annealed at 550°C without As overpressure in order to produce a (4 x 2) phase surface as determined by RHEED and RAS(or RDS). Under the same conditions as these measurements, STM images were obtained. The STM data strongly points to a co-existence of reconstructions. One set of candidates is predicted as the ζ(4 x 6), ζ(4 x 4), and ζ(4 x 4) reconstructions. All models are based on ζ(4 x 2) by Lee et al. and satisfy electron-counting heuristics. The models differ in the presence and location of Ga atoms. At elevated temperatures Ga adatoms can detach and diffuse to make Ga clusters. Mobile Ga would result in different surface reconstructions on different parts of the surface. Each of these reconstructions does not form large domains and is distributed randomly on the [001] surface. This reasonably explains why we do not observe the 1/4- and 1/6-order reflections in RHEED patterns obtained along the [1 - 10] direction. However, since all reconstructions are derived from the ζ(4 x 2), the surface dynamics associated with Ga motion will produce transient regions with this symmetry. Therefore, it is natural to observe the 1/2-order reflection along the [1 - 10] direction., 01 Jan. 2002, MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy, 113-114, 84968548056

液滴エピタキシィ法によりWetting Layer膜厚を制御したGaAs量子ドットの作製
立野高弘; 渡辺克之; SANGUINETTI S; 塚本史郎; 若木守明; 小口信行
2001, インテリジェント材料シンポジウム講演要旨集, 10th, 200902132314956791

HDE法により作製したInGaAs量子ドットのPL特性の成長条件依存性
間野高明; 間野高明; 塚本史郎; 尾嶋正治; 小口信行
2001, 応用物理学関係連合講演会講演予稿集, 48th, 3, 201202130954479895

低電圧カソードルミネッセンスによる液滴エビタキシィ法で作製した量子ドットの評価
関口隆史; 小口信行; 塚本史郎; 渡邊克之; 後藤芳彦
2001, 応用物理学関係連合講演会講演予稿集, 48th, 3, 201202176598741628

液滴エピタキシィ法によりWetting Layer膜厚を制御したGaAs量子ドットの作製
立野高弘; 立野高弘; 渡邉克之; 渡邉克之; SANGUINETTI S.; 塚本史郎; 若木守明; 小口信行
2001, 応用物理学関係連合講演会講演予稿集, 48th, 3, 201202178527382107

液滴エピタキシィ法により作製したGaAs量子ドットの顕微フォトルミネッセンス
渡邉克之; 渡邉克之; 吉田正裕; 塚本史郎; 渡邉紳一; 秋山英文; 後藤芳彦; 小口信行; 小口信行
2001, 応用物理学関係連合講演会講演予稿集, 48th, 3, 201202182702236256

GaAs(001)表面のAs₄照射その場STM観察
塚本史郎; PRISTOVSEK Markus; 小口信行
2001, 応用物理学関係連合講演会講演予稿集, 48th, 1, 201202144514859565

As照射下におけるGaAs(001)-(2x4)表面原子配列
大竹晃浩; 安田哲二; 花田貴; 尾関雅志; 塚本史郎; 小口信行
2001, 応用物理学会学術講演会講演予稿集, 62nd, 1, 201202169331703666

GaAs(001)表面の原子吸着ダイナミクス
塚本史郎; BELL Gavin R.; 小口信行
2000, 応用物理学関係連合講演会講演予稿集, 47th, 1, 201202118217467746

液滴エピタキシィ法により作製した高品質GaAs量子ドットの光学特性
渡邉克之; 渡邉克之; 塚本史郎; 後藤芳彦; 小口信行; 小口信行
2000, 応用物理学会学術講演会講演予稿集, 61st, 3, 201202120600376937

SPEED法により作製したInGaAs量子ドットの構造評価
間野高明; 間野高明; 渡邉克之; 塚本史郎; 藤岡洋; 尾嶋正治; 小口信行; LEE C.-D.; LEEM J. Y.; LEE H. J.; NOH S. K.
2000, 応用物理学関係連合講演会講演予稿集, 47th, 1, 201202139466158114

HDE法により作製したInGaAs Concave Diskの発光特性
間野高明; 間野高明; 塚本史郎; 小野寛太; 尾嶋正治; 小口信行
2000, 応用物理学会学術講演会講演予稿集, 61st, 3, 201202193389286842

GaAsエピタキシャル成長その場STM観察
塚本史郎; 小口信行
2000, 応用物理学会学術講演会講演予稿集, 61st, 1, 201202138653752856

SPEED法により作製したInGaAs量子ドットの磁場中での発光特性
間野高明; 渡辺克之; 塚本史郎; 今中康貴; 高増正; 藤岡洋; 木戸義勇; 尾嶋正治; 小口信行
1999, 応用物理学会学術講演会講演予稿集, 60th, 1, 200902120756988830

GaAs(001)表面上のMBE成長その場STM観察 (II)
塚本史郎; 小口信行
1999, 応用物理学関係連合講演会講演予稿集, 46th, 1, 200902164579151158

真空中S終端処理GaAs(001)表面の昇温脱離過程の解析
塚本史郎; 杉山宗弘; 下田正彦; 前山智; 渡辺義夫; 大野隆央; 小口信行
1999, 応用物理学会学術講演会講演予稿集, 60th, 2, 200902165973051637

SPEED法により作製したInGaAs量子ドットの磁場中での発光特性
間野高明; 渡辺克之; 塚本史郎; 今中康貴; 高増正; 藤岡洋; 木戸義勇; 尾嶋正治; 小口信行
1999, 応用物理学会学術講演会講演予稿集, 60th, 3, 200902187594653240

S終端処理GaAs(001)表面の放射光光電子分光
下田正彦; 塚本史郎; 渡辺義夫; 杉山宗弘; 前山智; 大野隆央; 小口信行
1999, 応用物理学会学術講演会講演予稿集, 60th, 2, 200902193626309970

Adatoms’ dynamics near step edges observed by in-situ STM-MBE system.
塚本史郎
1998, 応用物理学会学術講演会講演予稿集, 59th, 200902116364383320

In-situ STM-MBE observation on GaAs(001) surface.
塚本史郎; 小口信行
1998, 応用物理学関係連合講演会講演予稿集, 45th, 1, 200902118631237889

Thermal annealing effects on S-adsorbed GaAs(001) surfaces studied by XSW and XANES.
杉山宗弘; 塚本史郎; 下田正彦; 前山智; 渡辺義夫; 大野隆央; 小口信行
1998, 応用物理学会学術講演会講演予稿集, 59th, 1, 200902129961112740

SRPES studies on in-situ S-terminated GaAs(001) surface.
下田正彦; 塚本史郎; 渡辺義夫; 杉山宗弘; 前山智; 大野隆央; 小口信行
1998, 応用物理学会学術講演会講演予稿集, 59th, 1, 200902180871874093

Development of in-situ STM-MBE system.
塚本史郎; 小口信行
1998, 応用物理学関係連合講演会講演予稿集, 45th, 1, 200902182586798491

7a-PS-55 Photoelectron Diffraction Study of Sulfur-Terminated GaAs(001)Surface
Shimoda Masahiko; Tsukamoto Shiro; Koguchi Nobuyuki
The Physical Society of Japan (JPS), 16 Sep. 1997, Meeting abstracts of the Physical Society of Japan, 52, 2, 368-368, Japanese, 1342-8349, 200902139507746608, 110002061300, AA11439205

Study on Atomic Structure of S-treated GaAs Surface.
塚本史郎; 下田正彦; 大野隆央; 小口信行
1997, インテリジェント材料シンポジウム講演要旨集, 6th, 200902120343111964

S-As exchange reaction in sulfur-adsorbed GaAs(001) surface observed by using synchrotron radiation.
杉山宗弘; 前山智; 渡辺義夫; 塚本史郎; 小口信行
1997, 応用物理学関係連合講演会講演予稿集, 44th, 3, 200902178377083089

Photoelectron spectroscopy studies on in-situ S-terminated GaAs(001) surface.
下田正彦; 塚本史郎; 小口信行; 杉山宗弘; 前山智; 渡辺義夫
1997, 応用物理学関係連合講演会講演予稿集, 44th, 3, 200902193591441811

Photoelectron Diffraction Studies on Sulfur-Terminated GaAs(001)III
Shimoda M.; Tsukamoto S.; Koguchi N.
The Physical Society of Japan (JPS), 13 Sep. 1996, Abstracts of the meeting of the Physical Society of Japan. Sectional meeting, 1996, 2, 592-592, Japanese, 200902101789277322, 110001985851, AN10453836

31p-PSB-33 Photoelectron Diffraction Studies on Sulfur-Terminated GaAs(001) II
Shimoda M; Tsukamoto S; Koguchi N
The Physical Society of Japan (JPS), 15 Mar. 1996, Abstracts of the meeting of the Physical Society of Japan. Annual meeting, 51, 2, 495-495, Japanese, 1342-8349, 200902190453034777, 110002144701, AN10451127

STM/STS observation of in-situ- S-terminated GaAs(001) surface.
塚本史郎; 大野隆央; 小口信行
1996, 応用物理学関係連合講演会講演予稿集, 43rd, 2, 200902184871695054

30a-PS-26 X-ray Photoelectron Diffraction Study on Sulfer-Terminated GaAs(001)
Shimoda M.; Tsukamoto S.; Koguchi N.
The Physical Society of Japan (JPS), 12 Sep. 1995, Abstracts of the meeting of the Physical Society of Japan. Sectional meeting, 1995, 2, 521-521, Japanese, 200902186534645080, 110001982546, AN10453836

In-situ S-terminated GaAs(001)-(2*6) surface structure.
塚本史郎; 大野隆央; 小口信行
1995, 応用物理学会学術講演会講演予稿集, 56th, 3, 200902102213616489

Uniformity of in-situ sulfur-terminated GaAs(001)-(2*6) surface structure.
塚本史郎; 小口信行
1995, 応用物理学関係連合講演会講演予稿集, 42nd, Pt 2, 200902170828450616

STM Observation of S-terminated GaAs(001) Surface recostructures.
塚本史郎; 小口信行
1994, 応用物理学関係連合講演会講演予稿集, 41st, Pt 2, 200902139337900429

Angle-resolved magneto-PL spectra in triangular-shaped GaAs quantum wires.
永宗靖; 河野隆司; 塚本史郎; 西岡政雄; 荒川泰彦
1994, 応用物理学関係連合講演会講演予稿集, 41st, Pt 3, 200902146443575908

STM Observation of in-situ-sulfur-terminated-and-protected GaAs(001) Surface Recostructions.
塚本史郎; 小口信行
1994, 応用物理学会学術講演会講演予稿集, 55th, 2, 200902156822295306

STM observation on sulfur-terminated GaAs surface. Improvement of 2*6 symmetry by two step sulfur-termination.
塚本史郎; 小口信行
1994, 薄膜・表面物理分科会特別研究会講演要旨集, 1994, Dec, 200902118735532041

Fabrication and PL spectra of high density GaAs quantum dots using MOCVD selective growth.
永宗靖; 西岡政雄; 塚本史郎; 荒川泰彦
1993, 応用物理学関係連合講演会講演予稿集, 40th, Pt 3, 200902134608024318

Measurement of Carrier Lifetime in GaAs Quantum Wires. Wire Width Dependence.
河野隆司; 十川文博; 塚本史郎; 永宗靖; 西岡政雄; 荒川泰彦
1993, 応用物理学関係連合講演会講演予稿集, 40th, Pt 3, 200902165564667480

PL and PLE spectra of GaAs quantum dots tabricated by MOCVD selective growth.
永宗靖; 西岡政雄; 荒川泰彦; 塚本史郎
1993, 応用物理学会学術講演会講演予稿集, 54th, 3, 200902172787971145

Fabrication of InGaAs Strained Quantum Wires Using Selective MOCVD growth and their Optical Properties.
荒川太郎; 塚本史郎; 西岡政雄; 永宗靖; 荒川泰彦
1993, 応用物理学関係連合講演会講演予稿集, 40th, Pt 3, 200902178792454300

Fabrication of InGaAs Strained Quantum Wire Laser by Selective Area MOCVD Growth.
荒川太郎; 西岡政雄; 河野隆司; 永宗靖; 塚本史郎; 荒川泰彦
1993, 応用物理学会学術講演会講演予稿集, 54th, 3, 200902179439805120

Fabrication of GaAs Quantum Wire Structures (~10nm) and their Optical Properties.
塚本史郎; 永宗靖; 荒川太郎; 河野隆司; 西岡政雄; 荒川泰彦
1993, 応用物理学関係連合講演会講演予稿集, 40th, Pt 3, 200902118313255991

Fabrication of GaAs Arrowhead-like Quantum Wire Structures and its Optical Properties.
塚本史郎; 永宗靖; 西岡政雄; 荒川泰彦
1992, 応用物理学会学術講演会講演予稿集, 53rd, 3, 200902003878316372

Measurement of PL spectra and the lifetime in GaAs quantum dots.
永宗靖; 石川明夫; 塚本史郎; 西岡政雄; 荒川泰彦
1992, 応用物理学会学術講演会講演予稿集, 53rd, 3, 200902049574183112

Fabrication and Optical Property of GaAs Quantum Wires using MOCVD Selective Growth.
荒川泰彦; 塚本史郎; 永宗靖; 西岡政雄; 石川明夫; 田中琢爾
1992, 応用物理学関係連合講演会講演予稿集, 39th, Pt 0, 200902050397154458

Time-resolved Photoluminescence Measurements in GaAs Quantum Wires.
石川明夫; 塚本史郎; 永宗靖; 西岡政雄; 荒川泰彦
1992, 応用物理学関係連合講演会講演予稿集, 39th, Pt 3, 200902057722517567

Fabrication and Optical Properties of GaAs Quantum Wires (~10nm) by MOCVD Selective Growth.
塚本史郎; 永宗靖; 西岡政雄; 荒川泰彦
1992, 電子情報通信学会技術研究報告, 92, 320(CPM92 121-131), 0913-5685, 200902060430943680

Fabrication of Baried GaAs Wire-Structures using MOCVD Selective Growth. I.
塚本史郎; 永宗靖; 西岡政雄; 荒川泰彦
1991, 応用物理学関係連合講演会講演予稿集, 38th, Pt 3, 200902001120317960

Fabrication and Optical Property of Buried GaAs Quantum Wire-Structures using MOCVD Selective Growth.
塚本史郎; 永宗靖; 西岡政雄; 荒川泰彦
1991, 応用物理学会学術講演会講演予稿集, 52nd, 3, 200902023002074429

Fabrication of Buried GaAs Dot-Structures using MOCVD Selective Growth.
永宗靖; 塚本史郎; 西岡政雄; 荒川泰彦
1991, 応用物理学会学術講演会講演予稿集, 52nd, 3, 200902045042362765

Carrier Lifetime in GaAs Quantum Wires.
石川明夫; 塚本史郎; 永宗靖; 西岡政雄; 荒川泰彦
1991, 応用物理学会学術講演会講演予稿集, 52nd, 3, 200902063919653926

Fabrication of Beried GaAs Wire-Structures using MOCVD Selective Growth. II.
永宗靖; 塚本史郎; 西岡政雄; 荒川泰彦
1991, 応用物理学関係連合講演会講演予稿集, 38th, Pt 3, 200902078281383869

Manufacture of GaAs quantum fine line by a MOCVD method and its optical properties.
塚本史郎; 西岡政雄; 永宗靖; 荒川泰彦
1991, 電気学会光・量子デバイス研究会資料, OQD-91, 54-59, 200902029598061556

MOCVD selective growth for GaAs wire-structure using electron beam lithography.
塚本史郎; 永崇靖; 西岡政雄; 荒川泰彦
1990, 応用物理学会学術講演会講演予稿集, 51st, 3, 200902041203491344

量子ドットエレクトロニクスの最前線
塚本史郎
Contributor, 第3章 解析・構造評価第2節 STMBEによるInAs量子ドット成長表面の原子レベルその場STM観察, エヌ・ティー・エス, Mar. 2011

Handbook of Self Assmebled Semiconductor Nanostructures Novel Devices in Photonics and Electronics
Shiro Tsukamoto
Contributor, 8. GaSb/GaAs quantum nanostructures by molecular beam epitaxy, Elsevier, 2008

Study of initial metal cluster size on compound semiconductor surfaces
S. Tsukamoto
Invited oral presentation, English, The 10th International Symposium on Materials Science and Surface Technology (MSST 2021), Invited
21 Feb. 2022
21 Feb. 2022- 21 Feb. 2022

Droplet epitaxy from beginning to present, pursuing initial cluster size
S. Tsukamoto
Invited oral presentation, English, 21st International Conference in Molecular Beam Epitaxy, Invited
08 Sep. 2021
06 Sep. 2021- 09 Sep. 2021

Investigation on Compound Semiconductor Crystal growth mechanism by STMBE which performs true in-situ STM imaging during MBE growth
S. Tsukamoto
Invited oral presentation, English, 7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2019), Invited
Sep. 2019
24 Sep. 2019- 27 Sep. 2019

Formation mechanism of InAs quantum dots on GaAs(001) investigated by STMBE which performs true in-situ STM imaging during MBE growth
S. Tsukamoto
Invited oral presentation, English, The Winter School on “Quantum Dots: from growth to fundamental properties”, Invited
Feb. 2019
11 Feb. 2019- 14 Feb. 2019

S-terminatied semiconductor surfaces for green chemistry
S. Tsukamoto
Invited oral presentation, English, 6th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2017), Invited
Sep. 2017
25 Sep. 2017- 28 Sep. 2017

Pd-catalysts on S-terminated GaAs and GaN substrates for green chemistry
S. Tsukamoto
Micro/Bio/Nanofluidics Unit Seminar, The Okinawa Institute of Science and Technology, Invited, The Okinawa Institute of Science and Technology, Okinawa
17 Jan. 2017

化合物半導体を用いた研究最前線 -量子ドット発生メカニズムから担持型Pd触媒合成反応まで-
塚本史郎
長岡技術科学大学応用物理学特別セミナー, Invited
09 Dec. 2016

Crystal growth mechanism of InAs quantum dots on GaAs(001) investigated by STMBE method
S. Tsukamoto
Applied Physics Seminar, Tel Aviv University, Israel, Invited, The Hebrew University of Jerusalem, Israel
30 Nov. 2016

Crystal growth mechanism investigated by STMBE method
S. Tsukamoto
Material Sciences Seminar, The Hebrew University of Jerusalem, Israel, Invited, Tel Aviv University, Israel
23 Nov. 2016

STMBE断続供給法によるGaAs(001)面上InAs量子ドットの特異な形成過程観察
東條孝志; 勝野弘康; 山口浩一; 塚本史郎
第12回 量子ナノ材料セミナー, Invited
21 Nov. 2016

Crystal growth mechanism of compound semiconductor quantum dots
S. Tsukamoto
International Conference CoMFoS16: Mathematical Analysis of Continuum Mechanics and Industrial Applications II, Invited, Fukuoka, Japan
26 Oct. 2016

Spatial point process and Hopkins-Skellam index of InAs quantum dot formation on GaAs(001)
T. Konishi; G. Gavin; S. Tsukamoto
International Conference CoMFoS16: Mathematical Analysis of Continuum Mechanics and Industrial Applications II, Invited, Fukuoka, Japan
26 Oct. 2016

III‐V族半導体量子ドット成長のその場観察と成長メカニズム
塚本史郎
Japanese, 化学工学会秋季大会研究発表講演要旨集(CD-ROM), Invited, 徳島大学, 徳島市, http://jglobal.jst.go.jp/public/201602246731176667
06 Sep. 2016

Atomistic Evolution of (n×3)-reconstructed Areas of InAs-GaAs(001) Surface during MBE Growth
T. Konishi; S. Tsukamoto; T. Ito; T. Akiyama; R. Kaida
19th International Conference on Molecular-Beam Epitaxy (MBE2016), Montpellier, France
Sep. 2016

MBE成長中InAs‐GaAs(001)表面における(n×3)再構成領域の変化
小西智也; 塚本史郎; 伊藤智徳; 秋山亨; 海田諒
Japanese, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), http://jglobal.jst.go.jp/public/201602214631931546
01 Sep. 2016

Size evolution of (nx3) reconstructed areas on growing InAs-GaAs(001) surface
T. Konishi; S. Tsukamoto; T. Ito; T. Akiyama; R. Kaida
The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Japan
Aug. 2016

STMBE - 三元混晶III-III’-V型化合物半導体薄膜成長の謎に迫る -
塚本 史郎
立命館グローバル・イノベーション研究機構名西セミナー, Invited, 立命館大学
Feb. 2016

STMBE（分子線エピタキシィー成長中 走査型トンネル顕微鏡観察）による化合物半導体ナノ構造結晶形成過程の解析
塚本 史郎
大阪電気通信大学エレクトロニクス基礎研究所セミナー, Invited, 電気通信大学
Nov. 2015

Atomic-scale Fluctuation of InAs-GaAs(001) Surface Reconstruction and Non-classical Nucleation of Quantum Dots
小西智也; BELL Gavin R; 塚本史郎
Japanese, 日本結晶成長学会誌(CD-ROM), http://jglobal.jst.go.jp/public/201502210192738452
Oct. 2015

Mathematical Analysis of Reconstruction Morphology - Regularity of InAs Quantum Dot Formation -
T. Konishi; G. Bell; S. Tsukamoto
5th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2015), Hsinchu, Taiwan
Sep. 2015

STMBE - from the past to the future -
S. Tsukamoto; W. Wirth; M. Maier
5th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2015), Invited, Hsinchu, Taiwan
Sep. 2015

InAs quantum dot nucleation sites at 500C studied by STMBE intermittent In supply method
T. Toujyou; K. Yamaguchi; S. Tsukamoto
5th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2015), Hsinchu, Taiwan
Sep. 2015

InGaAs表面再構成分布と量子ドット規則化生成の数理解析
小西智也; BELL Gavin R; 塚本史郎
Japanese, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), http://jglobal.jst.go.jp/public/201502203274878604
31 Aug. 2015

In断続供給によるInAs量子ドット形成過程のSTMBE観察
東條孝志; 東條孝志; 山口浩一; 塚本史郎
Japanese, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), http://jglobal.jst.go.jp/public/201502218874350074
31 Aug. 2015

Novel Insight into Spatial Regularity of InAs Quantum Dot Formation Pattern of GaAs(001)
T. Konishi; G. Bell; S. Tsukamoto
The 42nd International Symposium on Compound Semiconductors (iscs2015), Santa Barbara, CA, USA
Jun. 2015

ひょんなんことから触媒研究 -青色ＬＥＤの材料が薬をつくるのにも役立つ？-
塚本 史郎
第17回化学工学会学生発表会（徳島大会）, Invited, 徳島大学, 徳島市
Mar. 2015

In断続供給によるInAs量子ドット形成のSTMBE観察
東條孝志; 山口浩一; 塚本史郎
Japanese, 応用物理学会春季学術講演会講演予稿集(CD-ROM), 名古屋国際会議場, 名古屋市, http://jglobal.jst.go.jp/public/201502218782235308
26 Feb. 2015

in-situ STM observation of elementary growth processes in MBE of InAs quantum dot on GaAs(001) surface
塚本 史郎
北海道大学低温科学研究所研究集会：結晶表面・界面での成長素過程のその場観察と理論, Invited, 北海道大学, 札幌市
Jan. 2015

分子線エピタキシャル成長中での走査型トンネル顕微鏡観察
塚本 史郎
応用物理学会結晶工学分科会結晶工学セミナー, Invited, 学習院大学, 豊島区
Dec. 2014

InAsナノ構造形成のその場STM観察及び位置制御
東條 孝志; 山口 浩一; 塚本 史郎
学習院大学計算機センター特別研究プロジェクト「結晶成長の数理」第9回研究会−多成分エピタキシャル成長−, 学習院大学, 豊島区
Dec. 2014

多成分エピタキシャル成長その場原子レベル観察 -実験系から数理への期待-
塚本 史郎
学習院大学計算機センター特別研究プロジェクト「結晶成長の数理」第9回研究会−多成分エピタキシャル成長−, 学習院大学, 豊島区
Dec. 2014

GaAs基板上InAs量子ドット生成過程における規則性の起源について
小西 智也; G. Bell; 塚本 史郎
第10回量子ナノ材料セミナー, Invited, 情報通信研究機構, 小金井市
Oct. 2014

Evolution of Surface Reconstruction Territory on an InAs-GaAs Wetting Layer During MBE Growth
T. Konishi; G. Bell; S. Tsukamoto
18th International Conference on Molecular Beam Epitaxy (MBE 2014), Flagstaff, AZ, USA
Sep. 2014

STMBE Observation of InAs Quantum Dots on GaAs(001) at 500℃ Grown by an Intermittent Growth Method
T. Toujyou; K. Yamaguchi; S. Tsukamoto
18th International Conference on Molecular Beam Epitaxy (MBE 2014), Flagstaff, AZ, USA
Sep. 2014

化合物半導体MBE成長のその場STM観察
塚本 史郎
日本物理学会2014年秋季大会, Invited, 中部大学, 春日井市
Sep. 2014

InAsウェッティング層上ステップ構造近傍での量子ドット形成STMBE観察
東條孝志; 山口浩一; 塚本史郎
Japanese, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), 北海道大学, 札幌市, http://jglobal.jst.go.jp/public/201402299550060830
01 Sep. 2014

STMBE法によるGaAs(001)上InAs3D島構造成長その場観察
東條孝志; 山口浩一; 塚本史郎
Japanese, 応用物理学会春季学術講演会講演予稿集(CD-ROM), 青山学院大学, 相模原市, http://jglobal.jst.go.jp/public/201402203871362513
03 Mar. 2014

位置制御型単一量子ドット作製に関する研究
塚本 史郎; 長谷川 繁彦; 東條 孝志; 川端 明洋; 立石 学; 遠野 竜翁; 松下 樹里; 高岸 時夫; 大道 正明; 吉田 岳人
分子・物質合成プラットフォーム平成25年度シンポジウム, 文部科学省ナノテクノロジープラットフォーム, Invited, つくば国際会議場, つくば市
Mar. 2014

化合物半導体表面での 分子線エピタキシィ成長その場ＳＴＭ観察
塚本 史郎
結晶表面・界面での成長カイネティクスの理論とその場観察ワークショップ（北海道大学）, Invited, 北海道大学低温科学研究所, 札幌市
Jan. 2014

Quantum Dots for Future Devices - From basis to applications -
S. Tsukamoto
National Applied Research Laboratories (NAR Labs) Seminar, National Nano Device Laboratories, Hsinchu Science Park, Taiwan
Nov. 2013

Recent researches using STMBE: STM in-situ observations during MBE growth
S. Tsukamoto
FMSP Tutorial Symposium, Symposium on Mathematics for Various Disciplines 11, Mathematical Aspects of Surface and Interface Dynamics VI, Invited, Tokyo, Japan
Oct. 2013

in-situ atomic-level 3D imaging of InAs quantum dot formation process on GaAs(001) during molecular beam epitaxy growth
S. Tsukamoto
15th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP-XV), Invited, Warsaw, Poland
Sep. 2013

Recent researches using STMBE: STM \textitin-situ observations during MBE growth
S. Tsukamoto; T. Konishi; T. Toujyou; M. Hirayama; T. Teraoka
4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2013), Invited, Lake Arrowhead, CA, USA
Sep. 2013

aRecent researches using STMBE: STM in-situ observations during MBE growth
S. Tsukamoto
Halbleiter-Nanophotonik Seminar, Technische Universit\"at Berlin, Invited, Berlin, Germany
Aug. 2013

3-dimensional InAs island growth on GaAs(001) at 500℃ observed by STMBE system
T. Toujyou; T. Teraoka; S. Tsukamoto
17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), Warsaw, Poland
Aug. 2013

In_xGa_1-xAs alloy fluctuation and quantum dot nucleation mechanism
T. Konishi; G. Bell; S. Tsukamoto
17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), Warsaw, Poland
Aug. 2013

窒化ガリウムを用いた地球にやさしい触媒開発〜省エネ・ローコスト「薬」づくりを目指して〜
塚本 史郎
大阪大学産業科学研究所招へい教授講演会, Invited, 大阪大学産業科学研究所, 吹田市
Jul. 2013

STMBE : MBE成長その場STM観察
塚本 史郎
応用物理学会中国四国支部若手半導体研究会, Invited, 高松市生涯学習センターまなびCANホール, 高松市
Jul. 2013

2-dimensional InAs island growth on GaAs(001) at 500C observed by STMBE system
T. Toujyou; T. Teraoka; S. Tsukamoto
The 40th International Symposium on Compound Semiconductors (ISCS2013), Kobe, Japan
May 2013

Atomic-scale fluctuation of InAs-GaAs wetting layer and nucleation sites of InAs quantum dots
T. Konishi; G. Bell; S. Tsukamoto
The 40th International Symposium on Compound Semiconductors (ISCS2013), Kobe, Japan
May 2013

Ferromagnetic Coupling between Mn Atoms on the GaAs(110) Surface
M. Hirayama; J. Nakamura; S. Tsukamoto
The 40th International Symposium on Compound Semiconductors (ISCS2013), Kobe, Japan
May 2013

20年前にNIMS(NRIM)で研究開発した二つの成果(真空中S終端技術とSTMBE法)のその後
塚本 史郎
NIMSセミナー, 物質・材料研究機構, つくば市
Apr. 2013

STMBE法によるGaAs(001)面上InAs二次元島成長その場観察
東條孝志; 寺岡輝記; 塚本史郎
Japanese, 応用物理学会春季学術講演会講演予稿集(CD-ROM), 神奈川工科大学, 厚木市, http://jglobal.jst.go.jp/public/201302228980473800
11 Mar. 2013

Surface reconstruction territories on the InAs-GaAs wetting layer: can local reconstruction affect quantum dot nucleation?
T. Konishi; S. Tsukamoto; G. Taylor; G. Bell
Quantum Dot Day 2013, Nottingham, UK
Jan. 2013

Trench Structure Formations Around InAs QDs on GaAs(001) Observed by STMBE
T. Toujyou; K. Yamaguchi; S. Tsukamoto
40th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-40), Waikoloa, HI, USA
Jan. 2013

Morphology and Evolution of Surface Reconstruction of an InAs-GaAs Wetting Layer at High Temperatures
T. Konishi; G. Bell; S. Tsukamoto
40th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-40), Waikoloa, HI, USA
Jan. 2013

Spatial Distribution of Surface Reconstructions on InAs-GaAs Wetting Layer
T. Konishi; G. Bell; S. Tsukamoto
4th International Workshop on Quantum Nanostructure Solar Cells / 8th Seminar on Quantum Nanostructure Materials, Invited, Kobe, Japan
Dec. 2012

Atomistic insights and controls for compound semiconductor growth by STMBE: STM observation during MBE growth
S. Tsukamoto
NTT基礎研セミナー, NTT物性科学基礎研究所, 厚木市
Nov. 2012

Organopalladium catalyst on S-terminated GaAs(001) and GaN(0001) surfaces
S. Tsukamoto; T. Konishi; N. Nishiwaki; T. Toujyou; M. Hirayama; Y. Ueta; K. Tateishi; T. Tada; H. Moritoki; Y. Kihara; T. Tono; M. Kobayashi; M. Tateishi; T. Ishikawa; S. Morimoto; T. Minami; T. Teraoka; S. Fujikawa; M. Takahashi; G. Bell; H. Yoshikawa; M. Shimoda; Y. Oda; M. Yokoyama; A. Ishii
NTT基礎研セミナー, NTT物性科学基礎研究所, 厚木市
Nov. 2012

International Collaboration in Advanced Science Research Is a Key for Motivating Students : An Example of My Five-Year Experience in Anan Kosen
塚本 史郎
阿南高専「国際フォーラム」ものづくりのグローバル化と国際的視野を持った技術者の育成, 阿波観光ホテル, 徳島市
Oct. 2012

in-situ STM observation of nanohole formation on GaAs (001) by Ga droplet
T. Teraoka; C. Somaschini; T. Toujyou; T. Noda; S. Sanguinetti; N. Koguchi; T. Konishi; S. Tsukamoto
17th International Conference on Molecular Beam Epitaxy (MBE2012), Nara, Japan
Sep. 2012

Effect of annealing temperature after InAs QD fabrication observed by STMBE
T. Toujyou; S. Tsukamoto
17th International Conference on Molecular Beam Epitaxy (MBE2012), Nara, Japan
Sep. 2012

Incorporation of Mn Atoms onto GaAs(110): experimental and theoretical investigations
M. Hirayama; S. Tsukamoto
17th International Conference on Molecular Beam Epitaxy (MBE2012), Nara, Japan
Sep. 2012

Computational Analysis of Surface Reconstruction Domains and Quantum Dot Nucleation Sites on an InAs-GaAs Wetting Layer
T. Konishi; G. Bell; S. Tsukamoto
17th International Conference on Molecular Beam Epitaxy (MBE2012), Nara, Japan
Sep. 2012

GaAs(110)表面上へのMn原子の取り込み
平山基; 塚本史郎
Japanese, 応用物理学会学術講演会講演予稿集(CD-ROM), 愛媛大学, 松山市, http://jglobal.jst.go.jp/public/201202244174392246
27 Aug. 2012

STMBEを利用したInAs量子ドット作製後アニール温度効果その場観察
東條孝志; 塚本史郎
Japanese, 応用物理学会学術講演会講演予稿集(CD-ROM), 愛媛大学, 松山市, http://jglobal.jst.go.jp/public/201202293717020566
27 Aug. 2012

量子ドット形成の核発生その場観察
塚本 史郎
CVD反応分科会 第16回シンポジウム「薄膜成長における核発生機構と課題・話題」, Invited, 東京大学, 文京区
Aug. 2012

ナノスペースファクトリー化合物半導体最前線
塚本 史郎
香川大学工学研究科光機能材料物性特論特別講義, 香川大学, 高松市
Jul. 2012

やりたいことはなんですか
塚本 史郎
香川高専産業技術振興会特別講演会, Invited, 香川高等専門学校, 三豊市
Jun. 2012

Atomistic insights and controls for compound semiconductor growth by STMBE: STM observation during MBE growth
S. Tsukamoto
Spring meeting of the German Physical Society (DPG), Invited, Berlin, Germany
Mar. 2012

量子ドット発生直前のInAsウェッティング層における表面超構造ドメインの解析手法
小西智也; TAYLOR Greg; BELL Gavin; 塚本史郎
Japanese, 応用物理学関係連合講演会講演予稿集(CD-ROM), 名古屋国際会議場, 名古屋市, http://jglobal.jst.go.jp/public/201202225232625790
29 Feb. 2012

青色ＬＥＤ材料の窒化ガリウムを用いた地球にやさしい触媒開発〜省エネ・ローコストの「薬」づくりを目指して〜
塚本 史郎
市民フォーラム「LED・新エネルギー技術開発で日本がどう変わるか!」, Invited, 徳島大学日亜会館内国際センター, 徳島市
Dec. 2011

窒化ガリウム基板を用いた固定型遷移金属触媒の開発
塚本 史郎
ＪＳＴイノベーションサテライト徳島研究成果報告会, ホテルクレメント徳島, 徳島市
Oct. 2011

STM観察のための半導体薄膜へき開条件
大平融; 勝瀬泰史; 上原信知; 塚本史郎
Japanese, 電気関係学会四国支部連合大会講演論文集(CD-ROM), 阿南工業高等専門学校, 阿南市, http://jglobal.jst.go.jp/public/201102225960483350
13 Sep. 2011

Spatial Point Analysis of Surface Reconstruction Domains and Quantum Dot Nucleation Sites on InAs Wetting Layer
T. Konishi; S. Tsukamoto
Invited Seminar of the University of Rome, Tor Vergata, Invited
Sep. 2011

Atomistic insights and control for compound semiconductor MBE growth by \textitin situ STM
S. Tsukamoto
3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2011), Invited, Traunkirchen, Austria
Sep. 2011

Organopalladium catalyst on S-terminated GaAs(001) and GaN(0001) surfaces
T. Konishi; N. Nishiwaki; T. Toujyou; M. Hirayama; Y. Ueta; K. Tateishi; T. Tada; H. Moritoki; Y. Kihara; T. Tono; M. Kobayashi; M. Tateishi; T. Ishikawa; S. Morimoto; T. Minami; T. Teraoka; S. Fujikawa; M. Takahashi; G. Bell; H. Yoshikawa; M. Shimoda; Y. Oda; M. Yokoyama; A. Ishii; S. Tsukamoto
VII International Workshop on Semiconductor Surface Passivation (SSP'2011), Invited, Krak\'ow, Poland
Sep. 2011

Immobilized palladium catalysts on sulfur-terminated substrate studied by hard X-ray photoemission
H. Yoshikawa; M. Shimoda; M. Arisawa; S. Satoshi; T. Konishi; S. Tsukamoto; Y. Yamashita; S. Ueda; K. Kobayashi
4th International Workshop on Hard X-ray Photoelectron Spectroscopy (HAXPES 2011), Hamburg, Germany
Sep. 2011

STMBE法による位置制御した単一InAs量子ドットの作製
東條孝志; 吉田正裕; 秋山英文; 塚本史郎
Japanese, 応用物理学会学術講演会講演予稿集(CD-ROM), http://jglobal.jst.go.jp/public/201102231643347530
16 Aug. 2011

Observation of InAs growth rate differences between hole structures and ordinary WL region
T. Toujyou; M. Yoshita; H. Akiyama; S. Tsukamoto
International Conference on Materials for Advanced Technologies (ICMAT2011), Suntec, Singapore
Jun. 2011

Alloy Fluctuations in InGaAs Wetting Layer: A Key for Quantum Dot Nucleation
S. Tsukamoto
International Conference on Materials for Advanced Technologies (ICMAT2011), Invited, Suntec, Singapore
Jun. 2011

Spatial Point Analysis of Quantum Dot Nucleation Sites on InAs Wetting Layer
T. Konishi; S. Tsukamoto
International Conference on Materials for Advanced Technologies (ICMAT2011), Suntec, Singapore
Jun. 2011

STMBE（MBE成長その場STM観察）による単一量子ドット形成
塚本 史郎
東京大学物性研究所客員教授講演会, Invited, 東京大学物性研究所, 柏市
Apr. 2011

Statistical Comparison of Quantum Dot Nucleation Sites and Surface Reconstruction Domains on InAs/GaAs(001) Wetting Layer
T. Konishi; S. Tsukamoto
Villa Conference on Interactions Among Nanostructures (VCIAN), Las Vegas, Nevada, USA
Apr. 2011

Atomistic view of InAs quantum dot self-assembly during MBE growth
S. Tsukamoto
Villa Conference on Interactions Among Nanostructures (VCIAN), Invited, Las Vegas, Nevada, USA
Apr. 2011

in situ observation of InAs growth rate differences between hole structures and WL region
T. Toujyou; M. Yoshita; H. Akiyama; S. Tsukamoto
Villa Conference on Interactions Among Nanostructures (VCIAN), Las Vegas, Nevada, USA
Apr. 2011

Initial growth of MnAs on GaAs (110) and (001)
M. Hirayama; G. Bell; S. Tsukamoto
Villa Conference on Interactions Among Nanostructures (VCIAN), Las Vegas, Nevada, USA
Apr. 2011

GaN基板を用いた高リサイクルPd固定触媒の開発
平山基; 植田有紀子; 小西智也; 塚本史郎
Japanese, 応用物理学関係連合講演会講演予稿集(CD-ROM), 神奈川工科大学, 厚木市, http://jglobal.jst.go.jp/public/201102295947807935
09 Mar. 2011

GaAs基板上へのMnAs成長初期過程
平山基; BELL Gavin R; BELL Gavin R; 塚本史郎
Japanese, 応用物理学関係連合講演会講演予稿集(CD-ROM), 神奈川工科大学, 厚木市, http://jglobal.jst.go.jp/public/201102216987984956
09 Mar. 2011

III-V Material Growth and Characterization Studies by STMBE
S. Tsukamoto
Invited Seminar of Department of High Frequency Electronics / Microwave Engineering in Technische Universitut Darmstadt, Germany, Invited
Feb. 2011

Compound Semiconductor Crystal Growth and its insitu Characterization
S. Tsukamoto
Invited Seminar of Osnabrueck University of Applied Sciences, Germany, Invited
Feb. 2011

Atomistic Insights for InAs Quantum Dot Formation on GaAs(001) using STM within a MBE Growth Chamber
S. Tsukamoto
Invited Seminar of Leibniz Institute for Solid State and Materials Research Dresden, Invited
Feb. 2011

Scanning Tunneling Microscopic Observation During Molecular Beam Epitaxy Growth
S. Tsukamoto
ECE Seminar of University of California, San Diago, USA, Invited
Jan. 2011

Site-controlled Single InAs Quantum Dot on GaAs(001) Formed by STMBE
T. Toujyou; M. Yoshita; H. Akiyama; S. Tsukamoto
38th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-38), San Diego, CA, USA
Jan. 2011

MnAs Nanocrystals on GaAs(110) Formed by Molecular Beam Epitaxy
M. Hirayama; J. Aldous; G. Bell; S. Tsukamoto
38th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-38), San Diego, CA, USA
Jan. 2011

Pd Catalysts Formed on GaN(0001) for Heck Reaction
M. Hirayama; Y. Ueta; T. Konishi; S. Tsukamoto
38th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-38), San Diego, CA, USA
Jan. 2011

Statistical Approach to Quantum Dot Nucleation Sites in Stranski-Krastanow Mode
T. Konishi; S. Tsukamoto
38th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-38), San Diego, CA, USA
Jan. 2011

グリーンケミストリー：GaN基板上Pd固定触媒
平山 基; 植田 有紀子; 小西 智也; 塚本 史郎
JST-CREST第14回講演会, Invited, 名古屋工業大学, 名古屋市
Dec. 2010

InAsウェッティング層表面超構造ドメインと量子ドット生成パターンの統計的解析
小西 智也; 塚本 史郎
JST-CREST第14回講演会, Invited, 名古屋工業大学, 名古屋市
Dec. 2010

STMBE: 分子線エキタピシィ成長その場走査型トンネル顕微鏡観察
塚本 史郎
JST-CREST第14回講演会, Invited, 名古屋工業大学, 名古屋市
Dec. 2010

GaN‐S‐Pd基板触媒のマイクロ波を用いた反応への適用
杉岡智教; 小池晴夫; 奥山彰; 塚本史郎
Japanese, メディシナルケミストリーシンポジウム講演要旨集, 京都テルサ, 京都市, http://jglobal.jst.go.jp/public/201102206994967620
18 Oct. 2010

ナノドット選択形成のMBE成長その場STM観察
東條孝志; 塚本史郎
Japanese, 応用物理学会学術講演会講演予稿集(CD-ROM), 山形大学, 山形市, http://jglobal.jst.go.jp/public/201002273019700355
30 Aug. 2010

GaN基板上Pd固定触媒のS終端効果
平山基; 植田有紀子; 小西智也; 塚本史郎
Japanese, 応用物理学会学術講演会講演予稿集(CD-ROM), 長崎大学, 長崎市, http://jglobal.jst.go.jp/public/201002255279515456
30 Aug. 2010

InAsウェッティング層表面超構造ドメインと量子ドット生成パターンの統計的解析
小西智也; 塚本史郎
Japanese, 応用物理学会学術講演会講演予稿集(CD-ROM), 長崎大学, 長崎市, http://jglobal.jst.go.jp/public/201002228687787840
30 Aug. 2010

硫黄終端窒化ガリウム(0001)基板に担持された環境調和型触媒の密度汎関数法理論
石井 晃; 横山 真美; 塚本 史郎
環境にやさしい材料のための融合領域研究会, Invited, 鳥取大学, 鳥取市
Aug. 2010

半導体基板上に担持した有機金属触媒
塚本 史郎; 小西 智也; 西脇 永敏; 東條 孝志; 平山 基; 植田 有紀子; 立石 清; 多田 孝; 森時 秀司; 木原 義文; 遠野 竜翁; 武藏 美緒; 立石 学; 石川 琢馬; 森本 真司; 三並 貴大; 寺岡 輝記; 小池 晴夫; 奥山 彰; 杉岡 智教; 近藤 竜二; 西本 遼右; 大都 裕希; 石井 晃; 横山 真美; 小田 泰丈; 下田 正彦; 吉川 英樹; 高橋 正光; 藤川 誠司; G. Bell
環境にやさしい材料のための融合領域研究会, Invited, 鳥取大学, 鳥取市
Aug. 2010

in situ scanning tunneling microscope during III-V molecular beam epitaxy growth
S. Tsukamoto
Fwf Sfb InfraRed Optical Nanostructures IR-ON Seminar in Johannes Kepler Universit{\"a}t, Invited, Linz, Austria
Aug. 2010

Nanohole formation of Ga nanostructure on GaAs (001) by droplet epitaxy
T. Teraoka; C. Somaschini; T. Toujyou; T. Noda; S. Sanguinetti; N. Koguchi; T. Konishi; S. Tsukamoto
16th International Conference on Molecular Beam Epitaxy (MBE2010), Berlin, Germany
Aug. 2010

in situ STM observation during InAs growth in nano holes at 300^\circC
T. Toujyou; S. Tsukamoto
16th International Conference on Molecular Beam Epitaxy (MBE2010), Berlin, Germany
Aug. 2010

Nano-clustered Pd catalysts formed on GaN surface for green chemistry
M. Hirayama; Y. Ueta; T. Konishi; S. Tsukamoto
16th International Conference on Molecular Beam Epitaxy (MBE2010), Berlin, Germany
Aug. 2010

GaAs(001)面上Gaナノ構造によるナノホール形成
寺岡 輝記; C. Somaschini; 東條 孝志; 野田 武司; S. Sanguinetti; 小口 信行; 小西 智也; 塚本 史郎
第29回電子材料シンポジウム, ラフォーレ修善寺, 伊豆長岡市
Jul. 2010

Quantum structures formed by atomistic selective growth: From artificial to self-organized patterned substrates
S. Tsukamoto
8th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS2010), Invited, Como, Itary
Jun. 2010

Site-control growth of InAs nano-dot on GaAs(001) by STMBE
T. Toujyou; S. Tsukamoto
8th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS2010), Como, Itary
Jun. 2010

Selection nanohole formation by Ga droplet on GaAs(001) observed by STMBE
T. Teraoka; C. Somaschini; T. Toujyou; T. Noda; S. Sanguinetti; N. Koguchi; T. Konishi; S. Tsukamoto
8th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS2010), Como, Italy
Jun. 2010

Statistical analysis of surface reconstruction domains and quantum dot-forming pattern on InAs wetting layer
T. Konishi; M. Yamamoto; S. Tsukamoto
8th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS2010), Como, Italy
Jun. 2010

STMBE studies on III-V and S-terminated surfaces
S. Tsukamoto
10th Expert Evaluation \& Control of Compound Semiconductor Materials \& Technologies (Exmatec), Invited, Darmstadt/Seeheim, Germany
May 2010

in situ STM observation of the nanohole formation by Ga droplets on GaAs(001)
T. Teraoka; C. Somaschini; T. Toujyou; T. Noda; S. Sanguinetti; N. Koguchi; T. Konishi; S. Tsukamoto
The 37th International Symposium on Compound Semiconductors (iscs2010), Takamatsu, Japan
May 2010

in situ STM observation of InAs nano-dot growth on GaAs(001) by 3D growth assist method during As_4 irradiation at high temperature
T. Toujyou; S. Tsukamoto
The 37th International Symposium on Compound Semiconductors (iscs2010), Takamatsu, Japan
May 2010

Surface study of organopalladium molecules on S-terminated GaAs
T. Konishi; N. Nishiwaki; T. Toujyou; T. Ishikawa; T. Teraoka; Y. Ueta; Y. Kihara; H. Moritoki; T. Tono; M. Musashi; T. Tada; S. Fujikawa; M. Takahashi; G. Bell; M. Shimoda; S. Tsukamoto
The 37th International Symposium on Compound Semiconductors (iscs2010), Takamatsu, Japan
May 2010

Density functional theory for green chemical catalyst supported on S-terminated GaN(0001)
M. Yokoyama; S. Tsukamoto; A. Ishii
The 30th International Conference on the Physics of Semiconductors (ICPS2010), Seoul, Korea
May 2010

STMBEよる量子ドット成長のその場観察
塚本 史郎
第132回結晶工学分科会研究会「半導体ナノ構造が切り開くナノエレクトロニクス - ナノ構造作製技術の現状と結晶工学の課題 - 」, Invited, 学習院大学,東京
Apr. 2010

硫黄終端GaAs担持有機Pd触媒のFT‐IR測定
小西智也; 西脇永敏; 石川琢馬; 寺岡輝記; 植田有紀子; 塚本史郎
Japanese, 応用物理学関係連合講演会講演予稿集(CD-ROM), 東海大学, 平塚市, http://jglobal.jst.go.jp/public/201002298766552988
03 Mar. 2010

3次元成長アシスト法によるナノドット成長の高温その場STM観察
東條孝志; 塚本史郎
Japanese, 応用物理学関係連合講演会講演予稿集(CD-ROM), 東海大学, 平塚市, http://jglobal.jst.go.jp/public/201002271255560871
03 Mar. 2010

GaAs(001)面上Ga液滴によるナノホール形成のその場STM観察
寺岡輝記; SOMASCHINI Claudio; 東條孝志; 小西良明; 砂原米彦; 野田武司; 小西智也; 塚本史郎
Japanese, 応用物理学関係連合講演会講演予稿集(CD-ROM), 東海大学, 平塚市, http://jglobal.jst.go.jp/public/201002249517851508
03 Mar. 2010

半導体量子ドット形成過程をリアルタイムに見る
塚本 史郎
第13回名古屋大学ベンチャー・ビジネス・ラボラトリー （VBL）シンポジウム「次世代のモノ創りを先導するナノプロセスの最前線」, Invited, 名古屋大学, 名古屋市
Nov. 2009

半導体基板のパラジウム触媒反応への適用
杉岡智教; 小池晴夫; 奥山彰; 西脇永敏; 塚本史郎
Japanese, 反応と合成の進歩シンポジウム講演要旨集, 金沢市文化ホール, 金沢市, http://jglobal.jst.go.jp/public/200902262681244170
30 Oct. 2009

走査型プローブ顕微鏡を用いたGaAs(110)へき開面の観察
小西良明; 大平融; 上原信知; 塚本史郎
Japanese, 電気関係学会四国支部連合大会講演論文集(CD-ROM), 愛媛大学, 松山市, http://jglobal.jst.go.jp/public/200902276981551475
15 Sep. 2009

3次元成長アシスト法によるナノドット配列制御のその場STM観察
東條孝志; 塚本史郎
Japanese, 応用物理学会学術講演会講演予稿集, 富山大学, 富山市, http://jglobal.jst.go.jp/public/200902285861487128
08 Sep. 2009

Palladium acetate molecules on sulphur-terminated GaAs (001) surface
T. Konishi; T. Toujyou; N. Nishiwaki; T. Tono; Y. Kihara; H. Moritoki; T. Tada; S. Fujikawa; M. Takahashi; G. Bell; M. Shimoda; A. Ishii; S. Tsukamoto
6th International Workshop on Semiconductor Surface Passivation (SSP'2009), Zakopane, Poland
Sep. 2009

New application of S-terminated GaAs to a superior substrate of organometal catalysts for organic molecular reactions
S. Tsukamoto
6th International Workshop on Semiconductor Surface Passivation (SSP2009), Invited, Zakopane, Poland
Sep. 2009

第一原理計算を用いたS終端GaN(0001)表面担持型Pd触媒の研究
横山 真美; 塚本 史郎; 石井 晃
日本物理学会 2009年秋季大会, 熊本大学, 熊本市
Sep. 2009

第一原理計算を用いたS終端GaAs(001)表面担持型Pd触媒の研究
横山 真美; 浅野 裕基; 塚本 史郎; 石井 晃
日本物理学会 2009年秋季大会, 熊本大学, 熊本市
Sep. 2009

Structure determination of Pd-catalyst supported on S-terminated GaN(0001) using DFT calculation
M. Yokoyama; S. Tsukamoto; A. Ishii
Second International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2009), Invited, Anan, Japan
Aug. 2009

Surface investigation of sulphur-terminated GaAs(001) substrate for supported catalysts
T. Konishi; T. Toujyou; N. Nishiwaki; Y. Kihara; H. Moritoki; T. Tada; S. Fujikawa; M. Takahashi; G. Bell; S. Tsukamoto
Second International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2009), Anan, Japan
Aug. 2009

RHEED observation of organopalladium catalyst on S-terminated GaAs(001)-(2\times6) surface
T. Ishikawa; T. Konishi; T. Toujyou; G. Bell; S. Miyashiro; S. Tsukamoto
Second International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2009), Invited, Anan, Japan
Aug. 2009

in situ STM observation of InAs wetting layer and quantum dot formations on GaAs(001) during MBE growth
T. Honma; S. Tsukamoto
The 17th American Conference on Crystal Growth and Epitaxy (ACCGE-17), Lake Geneva, Wisconsin, USA
Aug. 2009

in situ STM Observation of InAs Quantum Dot on GaAs(001) Surface
T. Teraoka; T. Toujyou; M. Kurisaka; D. Wakamatsu; T. Otsu; T. Konishi; S. Tsukamoto
Second International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2009), Invited, Anan, Japan
Aug. 2009

in situ STM observation of InAs wetting layer grown by MBE
T. Toujyou; T. Teraoka; T. Konishi; S. Tsukamoto
Second International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2009), Invited, Anan, Japan
Aug. 2009

阿南高専日亜化学講座でのナノテクノロジーに関する教育研究の取組
塚本 史郎
詫間電波工業高等専門学校プロジェクト研究発表会, Invited, 詫間電波工業高等専門学校, 三豊市
Jul. 2009

GaAs(001)面上InAsウェッティング層とナノ構造のその場観察
小西 智也; 東條 孝志; 寺岡 輝記; 若松 大; 大津 貴志; 栗坂 昌克; 塚本 史郎
第５回量子ナノ材料セミナー, Invited, 埼玉大学, さいたま市
Jul. 2009

in situ STM observation of nano-structures generated near InAs quantum dots on GaAs (001) surface
T. Toujyou; T. Noda; T. Teraoka; T. Konishi; S. Tsukamoto
The 14th International Conference on Modulated Semiconductor Structures (MSS-14), Kobe, Japan
Jul. 2009

Structure determination of Pd-catalyst supported on S-terminated GaAs (001) using DFT calculation
A. Ishii; H. Asano; M. Yokoyama; S. Tsukamoto
10th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-10), Granada, Spain
Jul. 2009

MBE成長したInAsウェッティング層上に現れたリング構造のその場STM観察
東條 孝志; 寺岡 輝記; 小西 智也; 塚本 史郎
第28回電子材料シンポジウム, ラフォーレ琵琶湖, 守山市
Jul. 2009

Surface Investigation of Sulphur-terminated GaAs(001) Deposited with Organopalladium Catalyst
T. Konishi; T. Toujyou; N. Nishiwaki; Y. Kihara; S. Moritoki; T. Tada; S. Fujikawa; M. Takahashi; G. Bell; S. Tsukamoto
東北大学グローバルＣＯＥ地球惑星科学フロンティアセミナー, Invited, 東北大学, 仙台市
Jun. 2009

硫黄終端GaAs(001)-(2x6)面におけるX線表面散乱測定
小西 智也; 東條 孝志; 西脇 永敏; 木原 義文; 森時 秀司; 多田 孝; 藤川 誠司; 高橋 正光; G. Bell; 石井 晃; 塚本 史郎
平成20年度 文部科学省ナノテクノロジー・ネットワーク/重点ナノテクノロジー支援 放射光利用研究成果報告会 『ナノテクノロジー放射光利用研究の最前線 2008』, 物質・材料研究機構, つくば市
May 2009

走査型トンネル顕微鏡を用いて半導体結晶成長を原子レベルでその場観察する手法
塚本 史郎
日本地球惑星科学連合大会2009, Invited, 幕張メッセ国際会議場, 幕張市
May 2009

半導体基板を用いたマイクロ波の反応加速
杉岡 智教; 小池 晴夫; 奥山 彰; 塚本 史郎; 西脇 永敏
四国マイクロ波プロセス研究会(SIMPI)第5回交流会, 徳島県立工業技術センター, 徳島市
Apr. 2009

GaAs(001)面上In液滴によるナノホール形成その場STM観察
寺岡輝記; 野田武司; 東條孝志; 小西智也; 砂原米彦; 塚本史郎
Japanese, 応用物理学関係連合講演会講演予稿集, 筑波大学, つくば市, http://jglobal.jst.go.jp/public/200902293118895680
30 Mar. 2009

GaAs(001)面上InAsウェッティング層表面超構造の解析
山本紗世; 山本稔; 岩田久典; 東條孝志; 小西智也; 釜野勝; 杉野隆三郎; 三木哲志; 森住昇; 塚本史郎
Japanese, 応用物理学関係連合講演会講演予稿集, 筑波大学, つくば市, http://jglobal.jst.go.jp/public/200902289195599965
30 Mar. 2009

硫黄終端GaAs(001)‐(2x6)面におけるX線表面散乱測定
小西智也; 東條孝志; 西脇永敏; 木原義文; 森時秀司; 多田孝; 藤川誠司; 高橋正光; BELL Gavin; 石井晃; 塚本史郎
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902283187585043
30 Mar. 2009

GaAs(001)面上InAsウェッティング層の成長その場STM観察
東條孝志; 寺岡輝記; 小西智也; 砂原米彦; 塚本史郎
Japanese, 応用物理学関係連合講演会講演予稿集, 筑波大学, つくば市, http://jglobal.jst.go.jp/public/200902243551523057
30 Mar. 2009

硫黄終端GaN(0001)面上Pd有機金属触媒のXPS分析
三並貴大; 西脇永敏; 下田正彦; 森本真司; 松本高志; 小西智也; 塚本史郎
Japanese, 応用物理学関係連合講演会講演予稿集, 筑波大学, つくば市, http://jglobal.jst.go.jp/public/200902232495794776
30 Mar. 2009

硫黄終端GaAs(001)‐(2x6)面上Pd有機金属触媒の触媒活性
石川琢馬; 西脇永敏; 森本真司; 小西智也; 東條孝志; BELL G; 宮城勢治; 塚本史郎
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902228546954415
30 Mar. 2009

Development of Practically Usable and Environmentally Acceptable Catalyst Supported on GaN Plate
西脇永敏; 小西智也; 塚本史郎
Japanese, 日本化学会講演予稿集, 日本大学, 船橋市, http://jglobal.jst.go.jp/public/200902255505999827
13 Mar. 2009

半導体担持型Pd触媒を用いた鈴木‐宮浦カップリング:繰り返し利用可能・低漏洩
星谷尚亨; 星谷尚亨; 磯村暢宏; 下田正彦; 飯塚完司; 塚本史郎; 小西智也; 周東智; 有澤光弘
Japanese, 日本薬学会年会要旨集, 国立京都国際会館, 京都市, http://jglobal.jst.go.jp/public/200902268208789400
05 Mar. 2009

Surface Investigation of Sulphur-terminated GaAs (001) Deposited with Organopalladium Catalyst
T. Konishi; T. Toujyou; N. Nishiwaki; Y. Kihara; S. Moritoki; T. Tada; S. Fujikawa; M. Takahashi; G. Bell; S. Tsukamoto
The 16th International Conference on Microscopy of Semiconducting Materials (MSM XVI), Oxford, UK
Mar. 2009

Effects of Processing Treatments for Practically Usable and Environmentally Acceptable Catalyst Supported on S-terminated GaN (0001)
N. Nishiwaki; T. Konishi; S. Tsukamoto
The 16th International Conference on Microscopy of Semiconducting Materials (MSM XVI), Oxford, UK
Mar. 2009

Investigations of InAs QD Formation on GaAs (001) by \textitin situ STM during MBE Growth
S. Tsukamoto
The 16th International Conference on Microscopy of Semiconducting Materials (MSM XVI), Invited, Oxford, UK
Mar. 2009

in situ STM observation of ditch structures generated around InAs quantum dots on GaAs (001) grown by molecular beam epitaxy
T. Toujyou; T. Noda; T. Teraoka; M. Kurisaka; D. Wakamatsu; T. Otsu; T. Konishi; S. Tsukamoto
The 16th International Conference on Microscopy of Semiconducting Materials (MSM XVI), Oxford, UK
Mar. 2009

in situ STM Observation of Ditch Structures Near InAs Quantum Dots on GaAs (001) Surface
T. Toujyou; T. Noda; T. Teraoka; M. Kurisaka; D. Wakamatsu; T. Otsu; T. Konishi; S. Tsukamoto
Abstract book of 36th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-36), Santa Barbara, CA, USA
Jan. 2009

in situ STM Studies on III-V Surfaces during MBE Growth
S. Tsukamoto
36th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-36), Invited, Santa Barbara, CA, USA
Jan. 2009

Organopalladium catalyst on S-terminated GaAs (001) surface
T. Konishi; T. Toujyou; N. Nishiwaki; Y. Kihara; S. Moritoki; T. Tada; S. Fujikawa; M. Takahashi; G. Bell; S. Tsukamoto
Abstract book of 36th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-36), Santa Barbara, CA, USA
Jan. 2009

Development of Practically Usable & Green Chemical Catalyst Supported on S-terminated GaN (0001)
N. Nishiwaki; T. Konishi; S. Tsukamoto
Abstract book of 36th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-36), Santa Barbara, CA, USA
Jan. 2009

ナノ粒子分散溶液における簡易沈降速度測定装置の開発
松下 瞳; 小西 良明; 釜野 勝; 上原 信知; 小西 智也; 塚本 史郎; 曽我 公平
レーザー学会学術講演会第29回年次大会 講演予稿集, 徳島大学, 徳島市
Jan. 2009

蛍光バイオイメージングへ向けた固相中析出反応によるナノ蛍光体の作製
山下 翔; 釜野 勝; 上原 信知; 小西 智也; 塚本 史郎; 正木 和夫; 曽我 公平
レーザー学会学術講演会第29回年次大会 講演予稿集, 徳島大学, 徳島市
Jan. 2009

ナノスペースファクトリー：化合物半導体最前線
塚本 史郎
新居浜高専第43回工業技術懇談会, Invited, 新居浜工業高等専門学校, 新居浜市
Dec. 2008

in situ STM observation on organopalladium catalyst on S-terminated GaAs (001)-(2x6) surface
T. Konishi; T. Tojo; T. Ishikawa; G. Bell; S. Tsukamoto
15th International Conference on Molecular Beam Epitaxy (MBE2008), Vancouver, Canada
Aug. 2008

硫黄終端GaAs (001)-(2x6)面上のPd 有機金属触媒に関する研究
塚本 史郎; 小西 智也; 石川 琢馬; G. Bell
第４回量子ナノ材料セミナー, Invited, 電気通信大学, 調布市
Jul. 2008

硫黄終端GaAs (001)-(2\times6)表面上への酢酸パラジウム蒸着
小西 智也; 東條 孝志; 石川 琢馬; G. Bell; 塚本 史郎
第27回電子材料シンポジウム, ラフォーレ修善寺, 伊豆長岡市
Jul. 2008

GaAs (001)面上InAs 量子ドットのその場STM 観察
東條 孝志; 小西 智也; 栗坂 昌克; 若松 大; 大津 貴志; 塚本 史郎
第27回電子材料シンポジウム, ラフォーレ修善寺, 伊豆長岡市
Jul. 2008

A highly active organopalladium catalyst immobilised on S-terminated GaAs surface
T. Konishi; S. Tsukamoto
Condensed Matter Physics Surface Science Seminar, TU Berlin, Germany
May 2008

InAs quantum dot evolution observed by in-situ scanning tunneling microscopy during molecular beam epitaxy growth
S. Tsukamoto
The 2008 IEEE 20th Conference on Indium Phosphide and Related Materials (IPRM'08), Invited, Versailles, France
May 2008

MBE成長その場STM観察(STMBE)装置を用いた基礎実験の展望
塚本史郎
Japanese, 応用物理学関係連合講演会講演予稿集, 日本大学, 船橋市, http://jglobal.jst.go.jp/public/200902291449316874
27 Mar. 2008

硫黄終端GaAs(001)‐(2×6)面上Pd有機金属触媒のその場STM観察
小西智也; 東條孝志; 石川琢馬; BELL Gavin; 小西良明; 上原信知; 宮城勢治; 塚本史郎
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902272141129947
27 Mar. 2008

GaAs(001)面上InAs量子ドット側面の高温その場STM観察
栗坂昌克; 小西智也; 東條孝志; 大津貴志; 若松大; 釜野勝; 塚本史郎
Japanese, 応用物理学関係連合講演会講演予稿集, 日本大学, 船橋市, http://jglobal.jst.go.jp/public/200902252608645331
27 Mar. 2008

GaAs(001)面上InAs量子ドット近傍の高温その場STM観察
大津貴志; 小西智也; 東條孝志; 栗坂昌克; 若松大; 吉田岳人; 宮城勢治; 塚本史郎
Japanese, 応用物理学関係連合講演会講演予稿集, 日本大学, 船橋市, http://jglobal.jst.go.jp/public/200902248712225304
27 Mar. 2008

GaAs(001)面上InAs量子ドット端の高温その場STM観察
東條孝志; 小西智也; 栗坂昌克; 若松大; 大津貴志; 多田孝; 森住昇; 塚本史郎
Japanese, 応用物理学関係連合講演会講演予稿集, 日本大学, 船橋市, http://jglobal.jst.go.jp/public/200902230370078847
27 Mar. 2008

硫黄終端GaAs(001)‐(2×6)面上Pd有機金属触媒のRHEED観察
石川琢馬; 小西智也; 東條孝志; BELL Gavin; 小西良明; 上原信知; 宮城勢治; 塚本史郎
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902229670841943
27 Mar. 2008

GaAs(001)面上InAs量子ドットの高温その場STM観察
若松大; 小西智也; 東條孝志; 栗坂昌克; 大津貴志; 砂原米彦; 塚本史郎
Japanese, 応用物理学関係連合講演会講演予稿集, 日本大学, 船橋市, http://jglobal.jst.go.jp/public/200902229594053469
27 Mar. 2008

Hard X-ray Photoelectron Spectroscopy Study of Interface Structure and Electronic States of Organopalladium Catalysts Supported on S-terminated GaAs(001) Surface
M. Shimoda; N. Hoshiya; R. Gulam; M. Arisawa; S. Shuto; M. Hamada; I. Takamiya; A. Nishida; T. Konishi; S. Tsukamoto; H. Yokota; N. Isomura; K. Iizuka; Y. Yamashita; D. Nomoto; S. Ueda; H. Yoshikawa; K. Kobayashi
The 25th European Conference on Surface Science (ECOSS 25), Liverpool, UK
Feb. 2008

ＭＢＥによる環境調和型有機金属触媒の作製と薬学分野への応用
塚本 史郎
応用物理学会中四国支部主催研究会「分子線エピタキシーによる新しいナノ構造作製と応用」, Invited, 徳島大学, 徳島市
Dec. 2007

マイクロバイオ認証のための希土類添加ナノ蛍光体の作製
小西 智也; 曽我 公平; 庄野 正行; 塚本 史郎
第32回結晶成長討論会, ホテル シャトレーゼ ガトーキングダム, 札幌市
Nov. 2007

GaAs基板担持型パラジウム触媒の高機能化
有澤光弘; 濱田昌弘; 磯村暢宏; RABBANI Gulam; 下田正彦; 塚本史郎; 飯塚完司; 周東智; 西田篤司
Japanese, 触媒討論会討論会A予稿集, http://jglobal.jst.go.jp/public/200902289590668399
17 Sep. 2007

MBE成長その場STM観察によるInAs量子ドット発生メカニズムの解析
塚本 史郎; 荒川 泰彦
第26回電子材料シンポジウム, Invited, ラフォーレ琵琶湖
Jun. 2007

量子ドット形成に関する研究とそのためのMBE成長その場STM観察技術の開発
塚本 史郎
鳥取大学ナノテクノロジー・フロンティア, 鳥取大学
May 2007

GaAs(001)基板上自然形成ナノピットへのInAs QDs MBE選択成長
磯村暢宏; 塚本史郎; 永原清治; 飯塚完司; 荒川泰彦
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902283724797885
27 Mar. 2007

ナノ計測検討会報告書
田中一宜; 永井康介; 塚田捷; 花栗哲郎; 大須賀篤弘; 古宮聰; 二又政之; 渡部俊太郎; 金山敏彦; 高柳英明; 八瀬清志; 藤田大介; 田島道夫; 塚本史郎; 北野滋彦; 竹山春子; 阿多誠文; 小野崇人; 田村守; 菊地和也; 安田賢二; 谷田貝豊彦; 金村聖志; 水流徹; 今石宣之; 湯村守雄
Japanese, ナノ計測検討会報告書 平成19年, http://jglobal.jst.go.jp/public/200902224295068954
2007

As無し高温表面クリーニング法を施したGaAs(001)表面温度依存性の解析
磯村暢宏; 塚本史郎; 永原靖治; 角田直輝; 飯塚完司; 荒川泰彦
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902208757479585
29 Aug. 2006

InAs量子ドットMBE成長その場STM観察
塚本史郎; 荒川泰彦
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902203558166045
29 Aug. 2006

Mn照射InAs量子ドットの光学特性
永原靖治; 塚本史郎; 荒川泰彦
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902268678546741
22 Mar. 2006

GaAs(001)基板上InAs quantum dot MBE成長その場高温STM観察
本間剛; 塚本史郎; 荒川泰彦
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902247731828366
22 Mar. 2006

Sb照射GaAs(001)表面上InAs量子ドットMBE成長その場STM観察
角田直輝; 塚本史郎; 永原靖治; 磯村暢宏; 山口浩一; 荒川泰彦
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902244394742188
22 Mar. 2006

As無し高温表面クリーニング法を施したGaAs(001)基板表面の解析
磯村暢宏; 塚本史郎; 永原靖治; 角田直輝; 飯塚完司; 荒川泰彦
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902208730121140
22 Mar. 2006

新規不均一系GaAs担持型パラジウム触媒の開発
浜田昌弘; 塚本史郎; 下田正彦; 有沢光弘; 高宮郁子; 荒川泰彦; 西田篤司
Japanese, 日本薬学会年会要旨集, http://jglobal.jst.go.jp/public/200902246741503434
06 Mar. 2006

半導体表面ナノ構造の解析と応用
塚本史郎; 荒川泰彦
Japanese, 中部化学関係学協会支部連合秋季大会講演予稿集, http://jglobal.jst.go.jp/public/200902209600913610
23 Sep. 2005

GaAs基板担持型有機パラジウム触媒の製造とその機能
高宮郁子; 塚本史郎; 下田正彦; 有沢光弘; 浜田昌弘; 荒川泰彦; 西田篤司
Japanese, 触媒討論会討論会A予稿集, http://jglobal.jst.go.jp/public/200902210227187391
20 Sep. 2005

As無し高温表面クリーニング法を施したGaAs(001)基板その場STM観察
磯村暢宏; 塚本史郎; 本間剛; 角田直輝; 飯塚完司; 荒川泰彦
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902297311817900
07 Sep. 2005

GaAs(001)‐c(4×4)上のSb照射表面その場STM観察
角田直輝; 塚本史郎; 本間剛; 磯村暢宏; 山口浩一; 荒川泰彦
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902286860738786
07 Sep. 2005

GaAs(001)基板上InAs wetting layer MBE成長その場高温STM観察
本間剛; 塚本史郎; 荒川泰彦
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902226009571361
07 Sep. 2005

Sbを用いたMOCVD法自己形成InAs/GaAs量子ドットの高密度化・長波長化に関する検討
館林潤; GUIMARD Denis; YANG T; 塚本史郎; 西岡政雄; 荒川泰彦
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902259920210576
29 Mar. 2005

InAs量子ドット発生メカニズムの実験的・理論的解析
塚本史郎; 石井晃; 大島俊輔; 荒川泰彦
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902227071319934
29 Mar. 2005

p型変調ドープによるInAs量子ドットのPL強度増加
熊谷直人; 渡辺克之; 岩本敏; 塚本史郎; 荒川泰彦
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902211020495920
29 Mar. 2005

Development of Novel Palladium Catalyst Supported on GaAs Substrate and its Application to Organic Synthesis
高宮郁子; 有沢光弘; 塚本史郎; 下田正彦; 荒川泰彦; 西田篤司
Japanese, 日本化学会講演予稿集, http://jglobal.jst.go.jp/public/200902284082119256
11 Mar. 2005

半導体担持型パラジウム触媒の開発とその機能
高宮郁子; 有沢光弘; 塚本史郎; 下田正彦; 荒川泰彦; 西田篤司
Japanese, 日本薬学会年会要旨集, http://jglobal.jst.go.jp/public/200902299511299567
05 Mar. 2005

25aXC-2 Study for initial stage of InAs quantum dot formation on GaAs(001) substrate using simulation and in situ STM
Ishii Akira; Oshima Shunsuke; Tsukamoto Shiro; Arakawa Yasuhiko
Japanese, Meeting abstracts of the Physical Society of Japan, http://ci.nii.ac.jp/naid/110004537335
04 Mar. 2005

新規GaAs担持型パラジウム触媒の合成と機能
高宮郁子; 塚本史郎; 下田正彦; 宮下直樹; 有沢光弘; 荒川泰彦; 西田篤司
Japanese, 触媒討論会討論会A予稿集, http://jglobal.jst.go.jp/public/200902241394688230
27 Sep. 2004

InP(100)基板上のInAs量子ドットのアニール効果
角田浩二; 館林潤; 西岡政雄; 塚本史郎; 荒川泰彦
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902293530136069
01 Sep. 2004

InAs Wetting Layer表面構造のその場STM高温観察
塚本史郎; 荒川泰彦
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902296753204472
01 Sep. 2004

液滴エピタキシーを用いたInGaAs量子ドット成長と歪みを利用した自己配列制御
間野高明; 塚本史郎; 小口信行; 尾嶋正治
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902228487057935
01 Sep. 2004

MBE法によるInAs量子ドットへのBe添加の影響
熊谷直人; 渡辺克之; 塚本史郎; 荒川泰彦
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902226188065015
01 Sep. 2004

GaAs(001)面上InAs量子ドットMBE成長時その場STM観察
塚本史郎; 小口信行; 荒川泰彦
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902216605580178
01 Sep. 2004

新規GaAs担持型パラジウム錯体の創成
高宮郁子; 宮下直樹; 有沢光弘; 塚本史郎; 下田正彦; 荒川泰彦; 西田篤司
Japanese, 日本薬学会年会要旨集, http://jglobal.jst.go.jp/public/200902211858145425
05 Mar. 2004

硫黄終端GaAs(001)基板上に結合した有機金属錯体の触媒活性
塚本史郎; 有沢光弘; 下田正彦; PRISTOVSEK M; 宮下直樹; 高宮郁子; 荒川泰彦; 西田篤司
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902264491333579
30 Aug. 2003

InAs量子ドットMBE成長時その場STM直接観察
塚本史郎; BELL G R; PRISTOVSEK M; ORR B G; 荒川泰彦; 小口信行
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902244926658083
30 Aug. 2003

歪みバッファ層によるInAs量子ドットの高均一・高密度化
楊涛; 館林潤; 塚本史郎; 西岡政雄; 荒川泰彦
English, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902237833980841
30 Aug. 2003

Defected Ga-As dimer structure on the GaAs (001)-c (4x4) surface
Ohtake A; Nakamura J; Tsukamoto S; Koguchi N; Natori A
Japanese, Meeting abstracts of the Physical Society of Japan, http://ci.nii.ac.jp/naid/110002223443
06 Mar. 2003

Ga‐rich GaAs(001)表面のSTM観察
塚本史郎; PRISTOVSEK M; 大竹晃浩; 小口信行
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902188415747277
24 Sep. 2002

As安定化GaAs(001)‐c(4x4)表面に対する新たな構造モデル
大竹晃浩; 中村淳; 塚本史郎; 小口信行; 名取晃子
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902161685841903
24 Sep. 2002

A new structure model proposed for the GaAs(001)-c(4×4) surface
Ohtake A; Nakamura J; Tsukamoto S; Koguchi N; Natori A
Japanese, Meeting abstracts of the Physical Society of Japan, http://ci.nii.ac.jp/naid/110009719782
13 Aug. 2002

GaAs表面におけるGaナノクラスターの形成
塚本史郎; PRISTOVSEK M; 大竹晃浩; 小口信行
Japanese, 超微粒子とクラスター懇談会研究会講演予稿集, http://jglobal.jst.go.jp/public/200902160006369609
15 May 2002

Ga安定化GaAs(001)表面の高温STM観察
塚本史郎; PRISTOVSEK M; 大竹晃浩; ORR B G; BELL G R; 小口信行
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902180586204076
27 Mar. 2002

InAs/GaAs(110)上の周期的歪み場を利用したナノ構造の選択成長
小山紀久; 大竹晃浩; PRISTOVZEK M; 塚本史郎; ORR B G; 大野隆央; 小口信行
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902130421299725
27 Mar. 2002

Ga安定化GaAs(001)‐c(8x2)表面の高温でのRHEED構造解析
大竹晃浩; 塚本史郎; 小口信行; 尾関雅志
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902111466034400
27 Mar. 2002

27pYF-9 Structure analysis for Ga-stabilized GaAs(001) surfaces
Ohtake A; Tsukamoto S; Koguchi N; Ozeki M
Japanese, Meeting abstracts of the Physical Society of Japan, http://ci.nii.ac.jp/naid/110009774580
01 Mar. 2002

Ga-rich GaAs[001] surfaces observed by STM during high-temperature annealing in MBE chamber
S. Tsukamoto; M. Pristovsek; A. Ohtake; B. G. Orr; B. G. Orr; G. R. Bell; G. R. Bell; T. Ohno; N. Koguchi
MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy, https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84968548056&origin=inward, © 2002 IEEE.Si-doped GaAs[001] 1°off A (n = 2 × 1018 cm-3) substrates were prepared by standard procedures in MBE and then annealed at 550°C without As overpressure in order to produce a (4 x 2) phase surface as determined by RHEED and RAS(or RDS). Under the same conditions as these measurements, STM images were obtained. The STM data strongly points to a co-existence of reconstructions. One set of candidates is predicted as the ζ(4 x 6), ζ(4 x 4), and ζ(4 x 4) reconstructions. All models are based on ζ(4 x 2) by Lee et al. and satisfy electron-counting heuristics. The models differ in the presence and location of Ga atoms. At elevated temperatures Ga adatoms can detach and diffuse to make Ga clusters. Mobile Ga would result in different surface reconstructions on different parts of the surface. Each of these reconstructions does not form large domains and is distributed randomly on the [001] surface. This reasonably explains why we do not observe the 1/4- and 1/6-order reflections in RHEED patterns obtained along the [1 - 10] direction. However, since all reconstructions are derived from the ζ(4 x 2), the surface dynamics associated with Ga motion will produce transient regions with this symmetry. Therefore, it is natural to observe the 1/2-order reflection along the [1 - 10] direction.
01 Jan. 2002

As照射下におけるGaAs(001)‐(2x4)表面原子配列
大竹晃浩; 安田哲二; 花田貴; 尾関雅志; 塚本史郎; 小口信行
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/201202169331703666
11 Sep. 2001

液滴エピタキシィ法により作製したGaAs量子ドットの顕微フォトルミネッセンス
渡邉克之; 吉田正裕; 塚本史郎; 渡邉紳一; 秋山英文; 後藤芳彦; 小口信行
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/201202182702236256
28 Mar. 2001

液滴エピタキシィ法によりWetting Layer膜厚を制御したGaAs量子ドットの作製
立野高弘; 渡邉克之; SANGUINETTI S; 塚本史郎; 若木守明; 小口信行
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/201202178527382107
28 Mar. 2001

低電圧カソードルミネッセンスによる液滴エビタキシィ法で作製した量子ドットの評価
関口隆史; 小口信行; 塚本史郎; 渡邊克之; 後藤芳彦
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/201202176598741628
28 Mar. 2001

GaAs(001)表面のAs₄照射その場STM観察
塚本史郎; PRISTOVSEK Markus; 小口信行
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/201202144514859565
28 Mar. 2001

HDE法により作製したInGaAs量子ドットのPL特性の成長条件依存性
間野高明; 塚本史郎; 尾嶋正治; 小口信行
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/201202130954479895
28 Mar. 2001

液滴エピタキシィ法によりWetting Layer膜厚を制御したGaAs量子ドットの作製
立野高弘; 渡辺克之; SANGUINETTI S; 塚本史郎; 若木守明; 小口信行
Japanese, インテリジェント材料シンポジウム講演要旨集, http://jglobal.jst.go.jp/public/200902132314956791
15 Mar. 2001

HDE法により作製したInGaAs Concave Diskの発光特性
間野高明; 塚本史郎; 小野寛太; 尾嶋正治; 小口信行
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/201202193389286842
03 Sep. 2000

GaAsエピタキシャル成長その場STM観察
塚本史郎; 小口信行
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/201202138653752856
03 Sep. 2000

液滴エピタキシィ法により作製した高品質GaAs量子ドットの光学特性
渡邉克之; 塚本史郎; 後藤芳彦; 小口信行
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/201202120600376937
03 Sep. 2000

SPEED法により作製したInGaAs量子ドットの構造評価
間野高明; 渡邉克之; 塚本史郎; 藤岡洋; 尾嶋正治; 小口信行; LEE C.‐D; LEEM J. Y; LEE H. J; NOH S. K
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/201202139466158114
28 Mar. 2000

GaAs(001)表面の原子吸着ダイナミクス
塚本史郎; BELL Gavin R; 小口信行
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/201202118217467746
28 Mar. 2000

S終端処理GaAs(001)表面の放射光光電子分光
下田正彦; 塚本史郎; 渡辺義夫; 杉山宗弘; 前山智; 大野隆央; 小口信行
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902193626309970
01 Sep. 1999

SPEED法により作製したInGaAs量子ドットの磁場中での発光特性
間野高明; 渡辺克之; 塚本史郎; 今中康貴; 高増正; 藤岡洋; 木戸義勇; 尾嶋正治; 小口信行
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902187594653240
01 Sep. 1999

真空中S終端処理GaAs(001)表面の昇温脱離過程の解析
塚本史郎; 杉山宗弘; 下田正彦; 前山智; 渡辺義夫; 大野隆央; 小口信行
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902165973051637
01 Sep. 1999

SPEED法により作製したInGaAs量子ドットの磁場中での発光特性
間野高明; 渡辺克之; 塚本史郎; 今中康貴; 高増正; 藤岡洋; 木戸義勇; 尾嶋正治; 小口信行
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902120756988830
01 Sep. 1999

GaAs(001)表面上のMBE成長その場STM観察 (II)
塚本史郎; 小口信行
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902164579151158
28 Mar. 1999

SRPES studies on in-situ S-terminated GaAs(001) surface.
下田正彦; 塚本史郎; 渡辺義夫; 杉山宗弘; 前山智; 大野隆央; 小口信行
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902180871874093
Sep. 1998

Thermal annealing effects on S-adsorbed GaAs(001) surfaces studied by XSW and XANES.
杉山宗弘; 塚本史郎; 下田正彦; 前山智; 渡辺義夫; 大野隆央; 小口信行
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902129961112740
Sep. 1998

Adatoms' dynamics near step edges observed by in-situ STM-MBE system.
塚本史郎
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902116364383320
Sep. 1998

Development of in-situ STM-MBE system.
塚本史郎; 小口信行
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902182586798491
Mar. 1998

In-situ STM-MBE observation on GaAs(001) surface.
塚本史郎; 小口信行
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902118631237889
Mar. 1998

7a-PS-55 Photoelectron Diffraction Study of Sulfur-Terminated GaAs(001)Surface
Shimoda Masahiko; Tsukamoto Shiro; Koguchi Nobuyuki
Japanese, Meeting abstracts of the Physical Society of Japan, http://ci.nii.ac.jp/naid/110002061300
16 Sep. 1997

Photoelectron Diffraction Study of Sulfur-Terminated GaAs(001) Surface.
下田正彦; 塚本史郎; 小口信行
Japanese, 日本物理学会講演概要集(分科会), http://jglobal.jst.go.jp/public/200902139507746608
Sep. 1997

Photoelectron spectroscopy studies on in-situ S-terminated GaAs(001) surface.
下田正彦; 塚本史郎; 小口信行; 杉山宗弘; 前山智; 渡辺義夫
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902193591441811
Mar. 1997

S-As exchange reaction in sulfur-adsorbed GaAs(001) surface observed by using synchrotron radiation.
杉山宗弘; 前山智; 渡辺義夫; 塚本史郎; 小口信行
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902178377083089
Mar. 1997

Study on Atomic Structure of S-treated GaAs Surface.
塚本史郎; 下田正彦; 大野隆央; 小口信行
Japanese, インテリジェント材料シンポジウム講演要旨集, http://jglobal.jst.go.jp/public/200902120343111964
1997

Photoelectron Diffraction Studies on Sulfur-Terminated GaAs(001)III
Shimoda M; Tsukamoto S; Koguchi N
Japanese, Abstracts of the meeting of the Physical Society of Japan. Sectional meeting, http://ci.nii.ac.jp/naid/110001985851
13 Sep. 1996

31p-PSB-33 Photoelectron Diffraction Studies on Sulfur-Terminated GaAs(001) II
Shimoda M; Tsukamoto S; Koguchi N
Japanese, Abstracts of the meeting of the Physical Society of Japan. Annual meeting, http://ci.nii.ac.jp/naid/110002144701
15 Mar. 1996

Photoelectron Diffraction Studies on Sulfur-Terminated GaAs(001). II.
下田正彦; 塚本史郎; 小口信行
Japanese, 日本物理学会講演概要集(年会), http://jglobal.jst.go.jp/public/200902190453034777
Mar. 1996

STM/STS observation of in-situ- S-terminated GaAs(001) surface.
塚本史郎; 大野隆央; 小口信行
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902184871695054
Mar. 1996

30a-PS-26 X-ray Photoelectron Diffraction Study on Sulfer-Terminated GaAs(001)
Shimoda M; Tsukamoto S; Koguchi N
Japanese, Abstracts of the meeting of the Physical Society of Japan. Sectional meeting, http://ci.nii.ac.jp/naid/110001982546
12 Sep. 1995

X-ray Photoelectron Diffraction Study on Sulfer-Terminated GaAs(001).
下田正彦; 塚本史郎; 小口信行
Japanese, 日本物理学会講演概要集(分科会), http://jglobal.jst.go.jp/public/200902186534645080
Sep. 1995

In-situ S-terminated GaAs(001)-(2*6) surface structure.
塚本史郎; 大野隆央; 小口信行
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902102213616489
Aug. 1995

Uniformity of in-situ sulfur-terminated GaAs(001)-(2*6) surface structure.
塚本史郎; 小口信行
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902170828450616
Mar. 1995

STM observation on sulfur-terminated GaAs surface. Improvement of 2*6 symmetry by two step sulfur-termination.
塚本史郎; 小口信行
Japanese, 薄膜・表面物理分科会特別研究会講演要旨集, http://jglobal.jst.go.jp/public/200902118735532041
Dec. 1994

Observation of enhanced exciton binding energy in GaAs quantum wires by using a magnetophotoluminescence measurement
Y. Nagamune; T. Kono; S. Tsukamoto; M. Nishioka; Y. Arakawa; K. Uchida; N. Miura
Proceedings of the International Quantum Electronics Conference (IQEC'94), https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0028607903&origin=inward, Magnetophotoluminescence measurements for GaAs/Al0.4Ga0.6As quantum wires QWRs with various widths were performed to investigate enhancement of binding energy of excitons in QWRs. The experimental results demonstrated enhancement of 1-D exciton binding energy by the 2-D confinement effect.
01 Dec. 1994

STM Observation of in-situ-sulfur-terminated-and-protected GaAs(001) Surface Recostructions.
塚本史郎; 小口信行
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902156822295306
Sep. 1994

Angle-resolved magneto-PL spectra in triangular-shaped GaAs quantum wires.
永宗靖; 河野隆司; 塚本史郎; 西岡政雄; 荒川泰彦
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902146443575908
Mar. 1994

STM Observation of S-terminated GaAs(001) Surface recostructures.
塚本史郎; 小口信行
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902139337900429
Mar. 1994

Fabrication of InGaAs Strained Quantum Wire Laser by Selective Area MOCVD Growth.
荒川太郎; 西岡政雄; 河野隆司; 永宗靖; 塚本史郎; 荒川泰彦
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902179439805120
Sep. 1993

PL and PLE spectra of GaAs quantum dots tabricated by MOCVD selective growth.
永宗靖; 西岡政雄; 荒川泰彦; 塚本史郎
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902172787971145
Sep. 1993

Fabrication of InGaAs Strained Quantum Wires Using Selective MOCVD growth and their Optical Properties.
荒川太郎; 塚本史郎; 西岡政雄; 永宗靖; 荒川泰彦
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902178792454300
Mar. 1993

Measurement of Carrier Lifetime in GaAs Quantum Wires. Wire Width Dependence.
河野隆司; 十川文博; 塚本史郎; 永宗靖; 西岡政雄; 荒川泰彦
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902165564667480
Mar. 1993

Fabrication and PL spectra of high density GaAs quantum dots using MOCVD selective growth.
永宗靖; 西岡政雄; 塚本史郎; 荒川泰彦
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902134608024318
Mar. 1993

Fabrication of GaAs Quantum Wire Structures (-10nm) and their Optical Properties.
塚本史郎; 永宗靖; 荒川太郎; 河野隆司; 西岡政雄; 荒川泰彦
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902118313255991
Mar. 1993

Fabrication and Optical Properties of Quantum Wires and Quantum Dots by Metalorganic Chemical Vapor Selective Deposition.
荒川泰彦; 塚本史郎; 永宗靖; 西岡政雄
Japanese, 生産研究, http://jglobal.jst.go.jp/public/200902197982104580
Feb. 1993

Fabrication and Optical Properties of GaAs Quantum Wires (-10nm) by MOCVD Selective Growth.
塚本史郎; 永宗靖; 西岡政雄; 荒川泰彦
Japanese, 電子情報通信学会技術研究報告, http://jglobal.jst.go.jp/public/200902060430943680
19 Nov. 1992

Measurement of PL spectra and the lifetime in GaAs quantum dots.
永宗靖; 石川明夫; 塚本史郎; 西岡政雄; 荒川泰彦
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902049574183112
Sep. 1992

Fabrication of GaAs Arrowhead-like Quantum Wire Structures and its Optical Properties.
塚本史郎; 永宗靖; 西岡政雄; 荒川泰彦
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902003878316372
Sep. 1992

Time-resolved Photoluminescence Measurements in GaAs Quantum Wires.
石川明夫; 塚本史郎; 永宗靖; 西岡政雄; 荒川泰彦
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902057722517567
Mar. 1992

Fabrication and Optical Property of GaAs Quantum Wires using MOCVD Selective Growth.
荒川泰彦; 塚本史郎; 永宗靖; 西岡政雄; 石川明夫; 田中琢爾
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902050397154458
Mar. 1992

Fabrication of InGaAs Strained Quantum Wire Using MOCVD Selective Growth.
西岡正雄; 田中琢爾; 塚本史郎; 永宗靖; 荒川泰彦
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902012584076038
Mar. 1992

Manufacture of GaAs quantum fine line by a MOCVD method and its optical properties.
塚本史郎; 西岡政雄; 永宗靖; 荒川泰彦
Japanese, 電気学会光・量子デバイス研究会資料, http://jglobal.jst.go.jp/public/200902029598061556
11 Dec. 1991

Carrier Lifetime in GaAs Quantum Wires.
石川明夫; 塚本史郎; 永宗靖; 西岡政雄; 荒川泰彦
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902063919653926
Oct. 1991

Fabrication of Buried GaAs Dot-Structures using MOCVD Selective Growth.
永宗靖; 塚本史郎; 西岡政雄; 荒川泰彦
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902045042362765
Oct. 1991

Fabrication and Optical Property of Buried GaAs Quantum Wire-Structures using MOCVD Selective Growth.
塚本史郎; 永宗靖; 西岡政雄; 荒川泰彦
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902023002074429
Oct. 1991

Fabrication of Baried GaAs Wire-Structures using MOCVD Selective Growth. I.
塚本史郎; 永宗靖; 西岡政雄; 荒川泰彦
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902001120317960
Mar. 1991

Fabrication of Beried GaAs Wire-Structures using MOCVD Selective Growth. II.
永宗靖; 塚本史郎; 西岡政雄; 荒川泰彦
Japanese, 応用物理学関係連合講演会講演予稿集, http://jglobal.jst.go.jp/public/200902078281383869
Mar. 1991

Novel selective growth of buried GaAs quantum wire arrays by metal organic chemical vapor deposition
S. Tsukamoto; Y. Nagamune; M. Nishioka; Y. Arakawa
Conference on Solid State Devices and Materials, https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0025803151&origin=inward, We report successful fabrication of thin GaAs quantum wires (120A-200A)× (200A-300A), obtained by a novel selective growth technique using metal-organic chemical vapor deposition. The GaAs quantum wire is grown on a V-groove formed by two GaAs triangular prisms which are selectively grown on patterned substrates. The V-groove has a very sharp corner at the bottom, which results in reduction of the effective width of the quantum wire structures. The measurement of photoluminescence and photoluminescence excitation spectra with polarization dependence exhibit existence of the quantized state in the quantum wires.
01 Jan. 1991

Growth process and mechanism of nanometer-scale GaAs dot-structures using MOCVD selective growth
Y. Nagamune; S. Tsukamoto; M. Nishioka; Y. Arakawa
Conference on Solid State Devices and Materials, https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0025725763&origin=inward, Selective epitaxial growth of GaAs and Al0.4Ga0.6As were carried out in the windows of SiO2 masks on GaAs or Al0.4Ga0.6As (100) substrates by low pressure metal organic chemical vapor deposition, and nanometer-scale dot-structures were obtained. The growth process and mechanism of the dot-structures were estimated through the growth rate distribution in the patterns. It was revealed that the growth rates of the crystal plains change dependently on the exstence of other planes with faster growth rates, and that in-plane or two-dimensional migration on the surface is an important factor in the growth process. On the basis of the fact a novel method for making one-dimensional weakly coupled quantum dots are proposed, and GaAs dot-structures three-dimensionally surrounded by Al0.4Ga0.6As were fabricated.
01 Jan. 1991

MOCVD selective growth for GaAs wire-structure using electron beam lithography.
塚本史郎; 永崇靖; 西岡政雄; 荒川泰彦
Japanese, 応用物理学会学術講演会講演予稿集, http://jglobal.jst.go.jp/public/200902041203491344
Sep. 1990

JAPANESE ASSOCIATION FOR CRYSTAL GROWTH

THE JAPAN SOCIETY OF APPLIED PHYSICS

半導体装置の製造方法
Patent right, 荒川 泰彦, ギマール ドゥニ, 塚本 史郎, 江部 広治, 菅原 充, 特願2011-289138, Date applied: 28 Dec. 2011, 富士通株式会社, 国立大学法人 東京大学, 特開2012-124500, Date announced: 28 Jun. 2012, 特許第5297519号, Date issued: 21 Jun. 2013,

固定型遷移金属触媒及びその製造方法並びにその使用方法
Patent right, 塚本 史郎, 西脇 永敏, 小西 智也, 小池 晴夫, 杉岡 智教, 奥山 彰, 特願2009-001641, Date applied: 07 Jan. 2009, 独立行政法人国立高等専門学校機構, 特開2010-158614, Date announced: 22 Jul. 2010, 特許第5291472号, Date issued: 14 Jun. 2013,

半導体発光装置の製造方法
Patent right, 荒川 泰彦, ギマール ドゥニ, 塚本 史郎, 江部 広治, 菅原 充, 特願2007-123592, Date applied: 08 May 2007, 富士通株式会社, 国立大学法人 東京大学, 特開2007-335848, Date announced: 27 Dec. 2007, 特許第5095260号, Date issued: 28 Sep. 2012,

半導体装置の製造方法
Patent right, 荒川 泰彦, ギマール ドゥニ, 塚本 史郎, 江部 広治, 菅原 充, 特願2011-289138, Date applied: 28 Dec. 2011, 富士通株式会社, 国立大学法人 東京大学, 特開2012-124500, Date announced: 28 Jun. 2012,

基板結合型金属触媒、及びその製造方法
Patent right, 西田 篤司, 有澤 光弘, 塚本 史郎, 下田 正彦, 特願2005-246199, Date applied: 26 Aug. 2005, 国立大学法人 千葉大学, 独立行政法人物質・材料研究機構, 特開2007-054790, Date announced: 08 Mar. 2007, 特許第4704857号, Date issued: 18 Mar. 2011,

固定型遷移金属触媒及びその製造方法並びにその使用方法
Patent right, 塚本 史郎, 西脇 永敏, 小西 智也, 小池 晴夫, 杉岡 智教, 奥山 彰, 特願2009-001641, Date applied: 07 Jan. 2009, 独立行政法人国立高等専門学校機構, 日亜薬品工業株式会社, 特開2010-158614, Date announced: 22 Jul. 2010,

半導体装置の製造方法
Patent right, 荒川 泰彦, ギマール ドゥニ, 塚本 史郎, 江部 広治, 菅原 充, 特願2007-123592, Date applied: 08 May 2007, 国立大学法人 東京大学, 特開2007-335848, Date announced: 27 Dec. 2007,

基板結合型遷移金属触媒、及びその製造方法
Patent right, 西田 篤司, 有澤 光弘, 塚本 史郎, 下田 正彦, 特願2002-299141, Date applied: 11 Oct. 2002, 独立行政法人物質・材料研究機構, 独立行政法人科学技術振興機構, 特開2004-130258, Date announced: 30 Apr. 2004, 特許第3929867号, Date issued: 16 Mar. 2007,

基板結合型金属触媒、及びその製造方法
Patent right, 西田 篤司, 有澤 光弘, 塚本 史郎, 下田 正彦, 特願2005-246199, Date applied: 26 Aug. 2005, 国立大学法人 千葉大学, 独立行政法人物質・材料研究機構, 特開2007-054790, Date announced: 08 Mar. 2007,

金属触媒及びその製造方法
Patent right, 西田 篤司, 有澤 光弘, 塚本 史郎, 下田 正彦, 特願2004-091736, Date applied: 26 Mar. 2004, 独立行政法人物質・材料研究機構, 独立行政法人科学技術振興機構, 特開2005-270918, Date announced: 06 Oct. 2005,

半導体量子ドット素子の製造方法
Patent right, 楊 涛, 館林 潤, 塚本 史郎, 荒川 泰彦, 特願2003-304978, Date applied: 28 Aug. 2003, 国立大学法人 東京大学, 特開2005-079182, Date announced: 24 Mar. 2005, 特許第3692407号, Date issued: 01 Jul. 2005,

半導体量子ドット素子及びその製造方法
Patent right, 楊 涛, 館林 潤, 塚本 史郎, 荒川 泰彦, 特願2003-304978, Date applied: 28 Aug. 2003, 東京大学長, 特開2005-079182, Date announced: 24 Mar. 2005,

基板結合型遷移金属触媒、及びその製造方法
Patent right, 西田 篤司, 有澤 光弘, 塚本 史郎, 下田 正彦, 特願2002-299141, Date applied: 11 Oct. 2002, 独立行政法人 科学技術振興機構, 特開2004-130258, Date announced: 30 Apr. 2004,

半導体スーパーアトムとその結合体の作製方法
Patent right, 小口 信行, 塚本 史郎, 特願2000-157613, Date applied: 29 May 2000, 独立行政法人物質・材料研究機構, 特開2001-053014, Date announced: 23 Feb. 2001, 特許第3527941号, Date issued: 05 Mar. 2004,

結晶成長観察装置
Patent right, 塚本 史郎, 小口 信行, 特願平9-340413, Date applied: 10 Dec. 1997, 文部科学省金属材料技術研究所長, 特開平11-171692, Date announced: 29 Jun. 1999, 特許第3188913号, Date issued: 18 May 2001,

半導体スーパーアトムとその結合体の作製方法
Patent right, 小口 信行, 塚本 史郎, 特願2000-157613, Date applied: 29 May 2000, 科学技術庁金属材料技術研究所長, 特開2001-053014, Date announced: 23 Feb. 2001,

結晶成長観察装置
Patent right, 塚本 史郎, 小口 信行, 特願平9-340413, Date applied: 10 Dec. 1997, 科学技術庁金属材料技術研究所長, 特開平11-171692, Date announced: 29 Jun. 1999,